FR3009894B1 - Diode electroluminescente dont une zone active comporte des couches d'inn - Google Patents

Diode electroluminescente dont une zone active comporte des couches d'inn

Info

Publication number
FR3009894B1
FR3009894B1 FR1358121A FR1358121A FR3009894B1 FR 3009894 B1 FR3009894 B1 FR 3009894B1 FR 1358121 A FR1358121 A FR 1358121A FR 1358121 A FR1358121 A FR 1358121A FR 3009894 B1 FR3009894 B1 FR 3009894B1
Authority
FR
France
Prior art keywords
active zone
electroluminescent diode
inn layers
inn
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1358121A
Other languages
English (en)
French (fr)
Other versions
FR3009894A1 (fr
Inventor
Ivan-Christophe Robin
Amelie Dussaigne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Aledia
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Aledia, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1358121A priority Critical patent/FR3009894B1/fr
Priority to US14/913,254 priority patent/US10153393B2/en
Priority to JP2016535482A priority patent/JP6789570B2/ja
Priority to CN201480046545.4A priority patent/CN105917476B/zh
Priority to PCT/EP2014/067843 priority patent/WO2015025007A1/fr
Priority to EP14755068.5A priority patent/EP3036776B1/fr
Publication of FR3009894A1 publication Critical patent/FR3009894A1/fr
Application granted granted Critical
Publication of FR3009894B1 publication Critical patent/FR3009894B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
FR1358121A 2013-08-22 2013-08-22 Diode electroluminescente dont une zone active comporte des couches d'inn Expired - Fee Related FR3009894B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1358121A FR3009894B1 (fr) 2013-08-22 2013-08-22 Diode electroluminescente dont une zone active comporte des couches d'inn
US14/913,254 US10153393B2 (en) 2013-08-22 2014-08-21 Light emitting diode of which an active area comprises layers of inn
JP2016535482A JP6789570B2 (ja) 2013-08-22 2014-08-21 活性領域がＩｎＮの層を含む発光ダイオード
CN201480046545.4A CN105917476B (zh) 2013-08-22 2014-08-21 其有源区包括InN层的发光二极管
PCT/EP2014/067843 WO2015025007A1 (fr) 2013-08-22 2014-08-21 Diode electroluminescente dont une zone active comporte des couches d'inn
EP14755068.5A EP3036776B1 (fr) 2013-08-22 2014-08-21 Diode éllectroluminescente dont une zone active comporté des couches d'inn

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1358121A FR3009894B1 (fr) 2013-08-22 2013-08-22 Diode electroluminescente dont une zone active comporte des couches d'inn

Publications (2)

Publication Number Publication Date
FR3009894A1 FR3009894A1 (fr) 2015-02-27
FR3009894B1 true FR3009894B1 (fr) 2016-12-30

Family

ID=49237495

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1358121A Expired - Fee Related FR3009894B1 (fr) 2013-08-22 2013-08-22 Diode electroluminescente dont une zone active comporte des couches d'inn

Country Status (6)

Country Link
US (1) US10153393B2 (enExample)
EP (1) EP3036776B1 (enExample)
JP (1) JP6789570B2 (enExample)
CN (1) CN105917476B (enExample)
FR (1) FR3009894B1 (enExample)
WO (1) WO2015025007A1 (enExample)

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FR3000612B1 (fr) * 2012-12-28 2016-05-06 Commissariat Energie Atomique Dispositif optoelectronique a microfils ou nanofils
US10649233B2 (en) 2016-11-28 2020-05-12 Tectus Corporation Unobtrusive eye mounted display
JPWO2019106931A1 (ja) * 2017-12-01 2020-11-26 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子
US10673414B2 (en) 2018-02-05 2020-06-02 Tectus Corporation Adaptive tuning of a contact lens
US10505394B2 (en) 2018-04-21 2019-12-10 Tectus Corporation Power generation necklaces that mitigate energy absorption in the human body
US10838239B2 (en) 2018-04-30 2020-11-17 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10895762B2 (en) 2018-04-30 2021-01-19 Tectus Corporation Multi-coil field generation in an electronic contact lens system
US10790700B2 (en) 2018-05-18 2020-09-29 Tectus Corporation Power generation necklaces with field shaping systems
US11137622B2 (en) 2018-07-15 2021-10-05 Tectus Corporation Eye-mounted displays including embedded conductive coils
US10529107B1 (en) 2018-09-11 2020-01-07 Tectus Corporation Projector alignment in a contact lens
US10838232B2 (en) 2018-11-26 2020-11-17 Tectus Corporation Eye-mounted displays including embedded solenoids
US10644543B1 (en) 2018-12-20 2020-05-05 Tectus Corporation Eye-mounted display system including a head wearable object
US10944290B2 (en) 2019-08-02 2021-03-09 Tectus Corporation Headgear providing inductive coupling to a contact lens
CN113990989B (zh) * 2021-12-29 2022-03-08 材料科学姑苏实验室 一种紫外发光二极管外延片及其制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9913950D0 (en) 1999-06-15 1999-08-18 Arima Optoelectronics Corp Unipolar light emitting devices based on iii-nitride semiconductor superlattices
JP2002280673A (ja) * 2001-03-15 2002-09-27 Sony Corp 半導体発光素子
US7058105B2 (en) 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
FI20041213A0 (fi) 2004-09-17 2004-09-17 Optogan Oy Puolijohdeheterorakenne
KR100658970B1 (ko) 2006-01-09 2006-12-19 주식회사 메디아나전자 복합 파장의 광을 발생시키는 발광 다이오드 소자
WO2008060531A2 (en) 2006-11-15 2008-05-22 The Regents Of The University Of California Light emitting diode and laser diode using n-face gan, inn, and ain and their alloys
US20080111144A1 (en) 2006-11-15 2008-05-15 The Regents Of The University Of California LIGHT EMITTING DIODE AND LASER DIODE USING N-FACE GaN, InN, AND AlN AND THEIR ALLOYS
JP4927606B2 (ja) 2007-03-08 2012-05-09 古河電気工業株式会社 半導体発光素子
JP5097532B2 (ja) * 2007-12-21 2012-12-12 パナソニック株式会社 化合物半導体発光素子の製造方法
DE102009015569B9 (de) 2009-03-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
WO2011084478A1 (en) 2009-12-15 2011-07-14 Lehigh University Nitride based devices including a symmetrical quantum well active layer having a central low bandgap delta-layer
DE102010012711A1 (de) 2010-03-25 2011-09-29 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterbauelements
EP2503603B1 (en) * 2011-03-25 2019-09-25 LG Innotek Co., Ltd. Light emitting device and method for manufacturing the same
JP5633056B2 (ja) 2011-12-28 2014-12-03 豊田合成株式会社 半導体発光素子、発光装置
JP2014007291A (ja) * 2012-06-25 2014-01-16 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体発光素子および製造方法

Also Published As

Publication number Publication date
EP3036776B1 (fr) 2018-10-17
JP6789570B2 (ja) 2020-11-25
JP2016531442A (ja) 2016-10-06
FR3009894A1 (fr) 2015-02-27
EP3036776A1 (fr) 2016-06-29
US20160204307A1 (en) 2016-07-14
CN105917476B (zh) 2018-04-06
CN105917476A (zh) 2016-08-31
US10153393B2 (en) 2018-12-11
WO2015025007A1 (fr) 2015-02-26

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