CN101656287B - 发光二极管装置及其形成方法 - Google Patents
发光二极管装置及其形成方法 Download PDFInfo
- Publication number
- CN101656287B CN101656287B CN 200910166790 CN200910166790A CN101656287B CN 101656287 B CN101656287 B CN 101656287B CN 200910166790 CN200910166790 CN 200910166790 CN 200910166790 A CN200910166790 A CN 200910166790A CN 101656287 B CN101656287 B CN 101656287B
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- emitting diode
- light
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- layer
- barrier layer
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- 238000000034 method Methods 0.000 title claims description 30
- 150000002500 ions Chemical class 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 27
- 238000010276 construction Methods 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims description 8
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 229930002839 ionone Natural products 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052749 magnesium Inorganic materials 0.000 abstract description 2
- 239000011777 magnesium Substances 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 5
- 239000010410 layer Substances 0.000 description 126
- 238000005516 engineering process Methods 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000005670 electromagnetic radiation Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000004943 liquid phase epitaxy Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- -1 silicon ion Chemical class 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8982308P | 2008-08-18 | 2008-08-18 | |
US61/089,823 | 2008-08-18 | ||
US12/539,757 US8399273B2 (en) | 2008-08-18 | 2009-08-12 | Light-emitting diode with current-spreading region |
US12/539,757 | 2009-08-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101656287A CN101656287A (zh) | 2010-02-24 |
CN101656287B true CN101656287B (zh) | 2012-08-29 |
Family
ID=41680687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200910166790 Active CN101656287B (zh) | 2008-08-18 | 2009-08-18 | 发光二极管装置及其形成方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US8399273B2 (zh) |
CN (1) | CN101656287B (zh) |
TW (1) | TWI517431B (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8399273B2 (en) * | 2008-08-18 | 2013-03-19 | Tsmc Solid State Lighting Ltd. | Light-emitting diode with current-spreading region |
US8597962B2 (en) | 2010-03-31 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Vertical structure LED current spreading by implanted regions |
US8507940B2 (en) | 2010-04-05 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat dissipation by through silicon plugs |
US8476649B2 (en) | 2010-12-16 | 2013-07-02 | Micron Technology, Inc. | Solid state lighting devices with accessible electrodes and methods of manufacturing |
CN102290503B (zh) * | 2011-08-24 | 2013-05-29 | 上海蓝光科技有限公司 | 发光二极管及其制作方法 |
US20130221320A1 (en) * | 2012-02-27 | 2013-08-29 | Tsmc Solid State Lighting Ltd. | Led with embedded doped current blocking layer |
US9312432B2 (en) | 2012-03-13 | 2016-04-12 | Tsmc Solid State Lighting Ltd. | Growing an improved P-GaN layer of an LED through pressure ramping |
KR102007402B1 (ko) * | 2012-08-06 | 2019-08-05 | 엘지이노텍 주식회사 | 발광소자 |
CN103078026A (zh) * | 2012-10-11 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | 半导体发光元件及其制造方法 |
CN103117344B (zh) * | 2013-02-05 | 2016-08-24 | 海迪科(南通)光电科技有限公司 | Led发光器件及其制备方法 |
KR101517995B1 (ko) * | 2013-03-29 | 2015-05-07 | 경희대학교 산학협력단 | 그래핀에 의하여 광증폭된 발광 소자 및 이의 제조방법 |
TWI572057B (zh) * | 2014-11-07 | 2017-02-21 | A current blocking structure of a light emitting diode | |
KR20200066950A (ko) | 2018-12-03 | 2020-06-11 | 삼성전자주식회사 | 디스플레이 장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1395322A (zh) * | 2001-07-02 | 2003-02-05 | 索尼公司 | 氮化物半导体的制造方法及半导体器件的制造方法 |
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DE4314907C1 (de) * | 1993-05-05 | 1994-08-25 | Siemens Ag | Verfahren zur Herstellung von vertikal miteinander elektrisch leitend kontaktierten Halbleiterbauelementen |
US5391917A (en) * | 1993-05-10 | 1995-02-21 | International Business Machines Corporation | Multiprocessor module packaging |
JP3323324B2 (ja) * | 1993-06-18 | 2002-09-09 | 株式会社リコー | 発光ダイオードおよび発光ダイオードアレイ |
EP2270845A3 (en) * | 1996-10-29 | 2013-04-03 | Invensas Corporation | Integrated circuits and methods for their fabrication |
US6882030B2 (en) * | 1996-10-29 | 2005-04-19 | Tru-Si Technologies, Inc. | Integrated circuit structures with a conductor formed in a through hole in a semiconductor substrate and protruding from a surface of the substrate |
US6037822A (en) * | 1997-09-30 | 2000-03-14 | Intel Corporation | Method and apparatus for distributing a clock on the silicon backside of an integrated circuit |
US5998292A (en) * | 1997-11-12 | 1999-12-07 | International Business Machines Corporation | Method for making three dimensional circuit integration |
JP3516434B2 (ja) | 1997-12-25 | 2004-04-05 | 昭和電工株式会社 | 化合物半導体発光素子 |
JP3532788B2 (ja) * | 1999-04-13 | 2004-05-31 | 唯知 須賀 | 半導体装置及びその製造方法 |
US6322903B1 (en) * | 1999-12-06 | 2001-11-27 | Tru-Si Technologies, Inc. | Package of integrated circuits and vertical integration |
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US8399273B2 (en) * | 2008-08-18 | 2013-03-19 | Tsmc Solid State Lighting Ltd. | Light-emitting diode with current-spreading region |
US8507940B2 (en) * | 2010-04-05 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat dissipation by through silicon plugs |
-
2009
- 2009-08-12 US US12/539,757 patent/US8399273B2/en active Active
- 2009-08-18 TW TW098127687A patent/TWI517431B/zh active
- 2009-08-18 CN CN 200910166790 patent/CN101656287B/zh active Active
-
2013
- 2013-03-11 US US13/793,198 patent/US8823049B2/en active Active
-
2014
- 2014-08-29 US US14/472,495 patent/US20150053918A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1395322A (zh) * | 2001-07-02 | 2003-02-05 | 索尼公司 | 氮化物半导体的制造方法及半导体器件的制造方法 |
Non-Patent Citations (1)
Title |
---|
JP特开平11-186607A 1999.07.09 |
Also Published As
Publication number | Publication date |
---|---|
TWI517431B (zh) | 2016-01-11 |
US20130264539A1 (en) | 2013-10-10 |
CN101656287A (zh) | 2010-02-24 |
US8823049B2 (en) | 2014-09-02 |
US20150053918A1 (en) | 2015-02-26 |
US8399273B2 (en) | 2013-03-19 |
TW201010145A (en) | 2010-03-01 |
US20100038674A1 (en) | 2010-02-18 |
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Address after: Hsinchu City, Taiwan, China Patentee after: EPISTAR Corp. Address before: Hsinchu City, Taiwan, China Patentee before: Yuanxin Optoelectronics Co.,Ltd. |
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Effective date of registration: 20160517 Address after: Hsinchu City, Taiwan, China Patentee after: Yuanxin Optoelectronics Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: Taiwan Semiconductor Manufacturing Co.,Ltd. |