JP2012169622A5 - - Google Patents

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Publication number
JP2012169622A5
JP2012169622A5 JP2012025794A JP2012025794A JP2012169622A5 JP 2012169622 A5 JP2012169622 A5 JP 2012169622A5 JP 2012025794 A JP2012025794 A JP 2012025794A JP 2012025794 A JP2012025794 A JP 2012025794A JP 2012169622 A5 JP2012169622 A5 JP 2012169622A5
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JP
Japan
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group iii
species
group
precursor
reaction space
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JP2012025794A
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Japanese (ja)
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JP2012169622A (ja
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Priority claimed from US13/025,046 external-priority patent/US8143147B1/en
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Publication of JP2012169622A publication Critical patent/JP2012169622A/ja
Publication of JP2012169622A5 publication Critical patent/JP2012169622A5/ja
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JP2012025794A 2011-02-10 2012-02-09 薄膜形成のための方法とシステム Pending JP2012169622A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/025,046 US8143147B1 (en) 2011-02-10 2011-02-10 Methods and systems for forming thin films
US13/025,046 2011-02-10

Publications (2)

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JP2012169622A JP2012169622A (ja) 2012-09-06
JP2012169622A5 true JP2012169622A5 (enExample) 2015-03-26

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JP2012025794A Pending JP2012169622A (ja) 2011-02-10 2012-02-09 薄膜形成のための方法とシステム

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US (4) US8143147B1 (enExample)
EP (1) EP2487276A1 (enExample)
JP (1) JP2012169622A (enExample)
KR (1) KR20120092043A (enExample)
TW (1) TW201237207A (enExample)

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CN104342637B (zh) * 2013-07-26 2017-02-15 北京北方微电子基地设备工艺研究中心有限责任公司 一种原子层沉积设备
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JP7098677B2 (ja) 2020-03-25 2022-07-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
KR20220153420A (ko) * 2021-05-11 2022-11-18 주성엔지니어링(주) 박막 형성 방법
JP2023020168A (ja) * 2021-07-30 2023-02-09 株式会社Ｓｃｒｅｅｎホールディングス Ｉｉｉ族窒化物半導体の製造方法
KR20250098474A (ko) * 2023-12-22 2025-07-01 주성엔지니어링(주) 질화갈륨막 형성 방법
KR20250129382A (ko) * 2024-02-22 2025-08-29 주성엔지니어링(주) 3-5족 박막 형성 방법

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