JP2013168620A - 半導体レーザの製造方法 - Google Patents

半導体レーザの製造方法 Download PDF

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Publication number
JP2013168620A
JP2013168620A JP2012032635A JP2012032635A JP2013168620A JP 2013168620 A JP2013168620 A JP 2013168620A JP 2012032635 A JP2012032635 A JP 2012032635A JP 2012032635 A JP2012032635 A JP 2012032635A JP 2013168620 A JP2013168620 A JP 2013168620A
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Japan
Prior art keywords
contact layer
semiconductor laser
film
forming
window region
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Pending
Application number
JP2012032635A
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English (en)
Japanese (ja)
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JP2013168620A5 (enExample
Inventor
Shinji Abe
真司 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2012032635A priority Critical patent/JP2013168620A/ja
Priority to US13/597,305 priority patent/US8551797B2/en
Priority to CN201210561002.9A priority patent/CN103259192B/zh
Publication of JP2013168620A publication Critical patent/JP2013168620A/ja
Publication of JP2013168620A5 publication Critical patent/JP2013168620A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2012032635A 2012-02-17 2012-02-17 半導体レーザの製造方法 Pending JP2013168620A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012032635A JP2013168620A (ja) 2012-02-17 2012-02-17 半導体レーザの製造方法
US13/597,305 US8551797B2 (en) 2012-02-17 2012-08-29 Method for fabricating semiconductor laser
CN201210561002.9A CN103259192B (zh) 2012-02-17 2012-12-21 半导体激光器的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012032635A JP2013168620A (ja) 2012-02-17 2012-02-17 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
JP2013168620A true JP2013168620A (ja) 2013-08-29
JP2013168620A5 JP2013168620A5 (enExample) 2015-02-19

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Family Applications (1)

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JP2012032635A Pending JP2013168620A (ja) 2012-02-17 2012-02-17 半導体レーザの製造方法

Country Status (3)

Country Link
US (1) US8551797B2 (enExample)
JP (1) JP2013168620A (enExample)
CN (1) CN103259192B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110086080A (zh) * 2019-04-12 2019-08-02 苏州长光华芯光电技术有限公司 半导体激光器非吸收窗口及其制备方法和半导体激光器
JPWO2020053980A1 (ja) * 2018-09-12 2021-08-30 三菱電機株式会社 半導体レーザ
JP7170939B1 (ja) * 2021-12-01 2022-11-14 三菱電機株式会社 半導体装置の製造方法および半導体装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10396241B1 (en) 2016-08-04 2019-08-27 Apple Inc. Diffusion revealed blocking junction
CN112825415A (zh) * 2019-11-21 2021-05-21 深圳市中光工业技术研究院 激光器芯片制备方法和激光器

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171186A (ja) * 1982-11-12 1984-09-27 Fujitsu Ltd 半導体発光装置
JPH06112588A (ja) * 1992-09-24 1994-04-22 Olympus Optical Co Ltd 光半導体素子
JPH10200190A (ja) * 1997-01-07 1998-07-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JP2001230491A (ja) * 2000-02-15 2001-08-24 Sharp Corp 半導体レーザ素子及びその製造方法
JP2003069155A (ja) * 2001-06-12 2003-03-07 Mitsubishi Electric Corp 半導体装置の製造方法
WO2005057744A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. 半導体素子の製造方法
JP2007095776A (ja) * 2005-09-27 2007-04-12 Furukawa Electric Co Ltd:The 面発光レーザ素子およびレーザアレイ
JP2008235790A (ja) * 2007-03-23 2008-10-02 Mitsubishi Electric Corp 半導体光素子の製造方法
JP2011101039A (ja) * 2005-01-24 2011-05-19 Panasonic Corp 窒化物半導体レーザ素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132545A (ja) 1984-07-25 1986-02-15 Matsushita Electric Ind Co Ltd 半導体集積回路の製造方法
US5376582A (en) 1993-10-15 1994-12-27 International Business Machines Corporation Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
JP2002353563A (ja) * 2001-05-24 2002-12-06 Rohm Co Ltd 半導体発光素子およびその製法
JP2007242718A (ja) 2006-03-06 2007-09-20 Furukawa Electric Co Ltd:The 半導体レーザ素子および半導体レーザ素子の製造方法
US7682857B2 (en) * 2007-04-16 2010-03-23 Mitsubishi Electric Corporation Method for manufacturing semiconductor optical device
JP4748545B2 (ja) 2009-07-06 2011-08-17 古河電気工業株式会社 半導体光デバイスの製造方法および半導体光デバイス
CN102474071B (zh) 2009-07-06 2015-07-22 古河电气工业株式会社 半导体光学器件的制造方法、半导体光学激光元件的制造方法以及半导体光学器件
US8446927B2 (en) * 2011-01-27 2013-05-21 Rohm Co., Ltd. Semiconductor laser device and manufacturing method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59171186A (ja) * 1982-11-12 1984-09-27 Fujitsu Ltd 半導体発光装置
JPH06112588A (ja) * 1992-09-24 1994-04-22 Olympus Optical Co Ltd 光半導体素子
JPH10200190A (ja) * 1997-01-07 1998-07-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JP2001230491A (ja) * 2000-02-15 2001-08-24 Sharp Corp 半導体レーザ素子及びその製造方法
JP2003069155A (ja) * 2001-06-12 2003-03-07 Mitsubishi Electric Corp 半導体装置の製造方法
WO2005057744A1 (ja) * 2003-12-15 2005-06-23 The Furukawa Electric Co., Ltd. 半導体素子の製造方法
JP2011101039A (ja) * 2005-01-24 2011-05-19 Panasonic Corp 窒化物半導体レーザ素子
JP2007095776A (ja) * 2005-09-27 2007-04-12 Furukawa Electric Co Ltd:The 面発光レーザ素子およびレーザアレイ
JP2008235790A (ja) * 2007-03-23 2008-10-02 Mitsubishi Electric Corp 半導体光素子の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2020053980A1 (ja) * 2018-09-12 2021-08-30 三菱電機株式会社 半導体レーザ
CN110086080A (zh) * 2019-04-12 2019-08-02 苏州长光华芯光电技术有限公司 半导体激光器非吸收窗口及其制备方法和半导体激光器
JP7170939B1 (ja) * 2021-12-01 2022-11-14 三菱電機株式会社 半導体装置の製造方法および半導体装置
WO2023100296A1 (ja) * 2021-12-01 2023-06-08 三菱電機株式会社 半導体装置の製造方法および半導体装置

Also Published As

Publication number Publication date
CN103259192A (zh) 2013-08-21
US8551797B2 (en) 2013-10-08
US20130217157A1 (en) 2013-08-22
CN103259192B (zh) 2015-11-25

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