TWI413277B - 發光半導體元件之製造技術 - Google Patents
發光半導體元件之製造技術 Download PDFInfo
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- TWI413277B TWI413277B TW095135985A TW95135985A TWI413277B TW I413277 B TWI413277 B TW I413277B TW 095135985 A TW095135985 A TW 095135985A TW 95135985 A TW95135985 A TW 95135985A TW I413277 B TWI413277 B TW I413277B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 59
- 239000000872 buffer Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 48
- 229910002601 GaN Inorganic materials 0.000 claims description 45
- 229920002120 photoresistant polymer Polymers 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001579 optical reflectometry Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 description 32
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8581—Means for heat extraction or cooling characterised by their material
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG200506301-1A SG130975A1 (en) | 2005-09-29 | 2005-09-29 | Fabrication of semiconductor devices for light emission |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI413277B true TWI413277B (zh) | 2013-10-21 |
Family
ID=37900068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095135985A TWI413277B (zh) | 2005-09-29 | 2006-09-28 | 發光半導體元件之製造技術 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8004001B2 (enExample) |
| EP (1) | EP1949458A4 (enExample) |
| JP (1) | JP2009510765A (enExample) |
| KR (1) | KR20080070640A (enExample) |
| CN (1) | CN101317278B (enExample) |
| SG (1) | SG130975A1 (enExample) |
| TW (1) | TWI413277B (enExample) |
| WO (1) | WO2007037762A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017195118A1 (en) | 2016-05-10 | 2017-11-16 | King Abdullah University Of Science And Technology | Light emitters on transition metal dichalcogenides directly converted from thermally and electrically conductive substrates and method of making the same |
| TWI667809B (zh) * | 2016-12-23 | 2019-08-01 | 財團法人工業技術研究院 | 半導體基板結構 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8034643B2 (en) | 2003-09-19 | 2011-10-11 | Tinggi Technologies Private Limited | Method for fabrication of a semiconductor device |
| KR20070013273A (ko) | 2004-03-15 | 2007-01-30 | 팅기 테크놀러지스 프라이빗 리미티드 | 반도체 장치의 제조 |
| CN1998094B (zh) * | 2004-04-07 | 2012-12-26 | 霆激技术有限公司 | 半导体发光二极管上的反射层的制造 |
| SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
| SG133432A1 (en) | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
| SG140473A1 (en) | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
| SG140512A1 (en) | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
| SG148895A1 (en) * | 2007-07-04 | 2009-01-29 | Tinggi Technologies Private Ltd | Separation of semiconductor devices for light emission |
| WO2009005477A1 (en) * | 2007-07-04 | 2009-01-08 | Tinggi Technologies Private Limited | Separation of semiconductor devices |
| DE102008021403A1 (de) * | 2007-09-28 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung |
| GB0721957D0 (en) | 2007-11-08 | 2007-12-19 | Photonstar Led Ltd | Ultra high thermal performance packaging for optoelectronics devices |
| US8368100B2 (en) * | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
| KR100973259B1 (ko) * | 2008-02-22 | 2010-08-02 | 한국산업기술대학교산학협력단 | 측부 반사판을 갖는 수직구조 질화갈륨계 ｌｅｄ 소자 및그 제조방법 |
| JP5123269B2 (ja) | 2008-09-30 | 2013-01-23 | ソウル オプト デバイス カンパニー リミテッド | 発光素子及びその製造方法 |
| KR100962899B1 (ko) | 2008-10-27 | 2010-06-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| TWI389347B (zh) * | 2008-11-13 | 2013-03-11 | 晶元光電股份有限公司 | 光電元件及其製作方法 |
| KR101543328B1 (ko) * | 2008-11-18 | 2015-08-11 | 삼성전자주식회사 | 발광 소자 및 발광 소자의 제조 방법 |
| KR100999793B1 (ko) * | 2009-02-17 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 제조방법 |
| US8173456B2 (en) * | 2009-07-05 | 2012-05-08 | Industrial Technology Research Institute | Method of manufacturing a light emitting diode element |
| US8587017B2 (en) * | 2009-07-05 | 2013-11-19 | Industrial Technology Research Institute | Light emitting device and method of fabricating a light emitting device |
| CN102255013B (zh) * | 2011-08-01 | 2013-09-04 | 华灿光电股份有限公司 | 一种通过湿法剥离GaN基外延层和蓝宝石衬底来制备垂直结构发光二极管的方法 |
| CN106058000B (zh) * | 2011-09-16 | 2019-04-23 | 首尔伟傲世有限公司 | 发光二极管及制造该发光二极管的方法 |
| JP2013105975A (ja) * | 2011-11-16 | 2013-05-30 | Mitsubishi Electric Corp | 光半導体装置の製造方法 |
| US9548276B2 (en) | 2012-04-18 | 2017-01-17 | Win Semiconductors Corp. | Structure of backside copper metallization for semiconductor devices and a fabrication method thereof |
| TW201344869A (zh) * | 2012-04-18 | 2013-11-01 | 穩懋半導體股份有限公司 | 半導體元件背面銅金屬之改良結構及其製程方法 |
| US9450152B2 (en) | 2012-05-29 | 2016-09-20 | Micron Technology, Inc. | Solid state transducer dies having reflective features over contacts and associated systems and methods |
| JP2014187323A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体発光装置 |
| EP3365480A1 (en) | 2015-10-20 | 2018-08-29 | King Abdullah University Of Science And Technology | Nanowires-based light emitters on thermally and electrically conductive substrates and of making same |
| US10910514B1 (en) * | 2018-10-05 | 2021-02-02 | Facebook Technologies, Llc | Molded etch masks |
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| US20040217362A1 (en) * | 2001-02-01 | 2004-11-04 | Slater David B | Light emitting diodes including pedestals |
| US20050035363A1 (en) * | 2000-06-30 | 2005-02-17 | Kabushiki Kaisha Toshiba | Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20080210969A1 (en) | 2008-09-04 |
| CN101317278B (zh) | 2010-04-14 |
| EP1949458A1 (en) | 2008-07-30 |
| EP1949458A4 (en) | 2011-05-04 |
| WO2007037762A1 (en) | 2007-04-05 |
| JP2009510765A (ja) | 2009-03-12 |
| KR20080070640A (ko) | 2008-07-30 |
| CN101317278A (zh) | 2008-12-03 |
| US8004001B2 (en) | 2011-08-23 |
| SG130975A1 (en) | 2007-04-26 |
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