JP2008519438A - バックコンタクト太陽電池 - Google Patents
バックコンタクト太陽電池 Download PDFInfo
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- JP2008519438A JP2008519438A JP2007539261A JP2007539261A JP2008519438A JP 2008519438 A JP2008519438 A JP 2008519438A JP 2007539261 A JP2007539261 A JP 2007539261A JP 2007539261 A JP2007539261 A JP 2007539261A JP 2008519438 A JP2008519438 A JP 2008519438A
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- 238000002161 passivation Methods 0.000 claims abstract description 77
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 82
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000002184 metal Substances 0.000 claims description 62
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 47
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 39
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 238000000151 deposition Methods 0.000 claims description 35
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 26
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000011810 insulating material Substances 0.000 claims description 12
- 238000003698 laser cutting Methods 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 238000004093 laser heating Methods 0.000 claims 2
- 239000011148 porous material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 419
- 235000012431 wafers Nutrition 0.000 description 184
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 33
- 229910052782 aluminium Inorganic materials 0.000 description 31
- 239000002019 doping agent Substances 0.000 description 31
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 27
- 229910052796 boron Inorganic materials 0.000 description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 26
- 239000000203 mixture Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 20
- 229910052698 phosphorus Inorganic materials 0.000 description 20
- 239000011574 phosphorus Substances 0.000 description 20
- 239000000758 substrate Substances 0.000 description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 17
- 229910000077 silane Inorganic materials 0.000 description 17
- 239000011787 zinc oxide Substances 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 229910000878 H alloy Inorganic materials 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910001339 C alloy Inorganic materials 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910001199 N alloy Inorganic materials 0.000 description 4
- 229910000979 O alloy Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
本発明は、新規な太陽電池に関する。より詳しくは、本発明は、光エネルギー、特に太陽エネルギーを電気エネルギーに変換する点で極めて効率がよく、裏表面上に電気接点を有する太陽電池に関する。本発明は、また、かかる電池を製造する方法でもある。
ウエハが太陽電池に形成された際に入射光に面するように意図されたウエハの表面は、本明細書において前面又は前表面と呼び、前面と反対側のウエハの表面は、本明細書においては裏面又は裏表面と呼ぶ。
ここで、図面を参照しながら本発明の幾つかの態様を説明する。図は必ずしも一定の縮尺で描かれてはいない。例えば、図中に示される種々の金属、半導体及び他の層の厚さは、必ずしも、互いに同じ縮尺ではない。
Claims (42)
- 第1の受光表面及び第1の表面の反対側の第2の表面を有する、第1の導電型の半導体材料を含むウエハ;
ウエハの第1の表面上に配置された第1のパッシベーション層;
ウエハの第2の表面上に配置された第1の電気接点;
ウエハの第2の表面上に配置され、第1の電気接点から電気的に分離されている第2の電気接点;
ウエハの第2の表面上で少なくとも第1の電気接点とウエハの第2の表面との間のウエハ上の領域内に配置された第2のパッシベーション層;及び
第2のパッシベーション層と第1の接点との間の領域内に配置された、ウエハの導電型と反対の導電型の半導体材料を含む層;
を含む太陽電池。 - 半導体ウエハが、ドープされた結晶又は多結晶シリコンを含む請求項1に記載の太陽電池。
- 第1のパッシベーション層が、窒化ケイ素、水素化アモルファスシリコン、水素化微結晶シリコン、又はこれらの組み合わせを含む請求項2に記載の太陽電池。
- 第1のパッシベーション層が、水素化アモルファスシリコンを含み、更に炭素又は窒素又は酸素の一以上を含む請求項3に記載の太陽電池。
- パッシベーション層が窒素を含み、窒素の濃度がその中で傾斜分布している請求項4に記載の太陽電池。
- パッシベーション層が窒化ケイ素を含む請求項3に記載の太陽電池。
- 窒化ケイ素がPECVDによって形成されている請求項6に記載の太陽電池。
- 第2のパッシベーション層が、水素化アモルファスシリコン、水素化微結晶シリコン、又はこれらの組み合わせを含む請求項2に記載の太陽電池。
- ウエハの導電型と反対の導電型の半導体材料が、水素化アモルファスシリコン、水素化微結晶シリコン、又はこれらの組み合わせを含む請求項1に記載の太陽電池。
- ウエハが更に拡散距離を有し、拡散距離がウエハの厚さよりも大きい請求項1に記載の太陽電池。
- 第1及び第2の電気接点が、相互嵌合パターンでウエハ上に配置されている請求項1に記載の太陽電池。
- ウエハが拡散距離を有し、第2の接点の中心から第2の接点に最も近接する第1の接点の端部までの距離が拡散距離よりも小さい請求項11に記載の太陽電池。
- 第1の表面上に少なくとも一つの反射防止層を含む請求項1に記載の太陽電池。
- 第1の表面がテクスチャ加工されている請求項1に記載の太陽電池。
- 第2の電気接点が、ウエハの第2の表面上又はその中に直接配置されている導電性金属を含む請求項1に記載の太陽電池。
- 更に、第2の接点とウエハとの間に配置されたBSFを含む請求項15に記載の太陽電池。
- 第2の接点が点接点を含む請求項1に記載の太陽電池。
- 点接点の少なくとも一部分と第1の接点との間に絶縁層が配置されている請求項17に記載の太陽電池。
- 絶縁層が窒化ケイ素を含む請求項18に記載の太陽電池。
- 点接点がレーザー加熱によって形成されている請求項17に記載の太陽電池。
- 隣接する点接点の中心から中心までの間隔が、約100ミクロン〜約1mmの範囲である請求項17に記載の太陽電池。
- 点接点とウエハとの間にパッシベーション層を含む請求項17に記載の太陽電池。
- (a)半導体材料を含むウエハの第1の表面上に第1のパッシベーション層を堆積し;
(b)ウエハの第2の表面上に第2のパッシベーション層を堆積し;
(c)第2のパッシベーション層の上に、ウエハと反対の導電型を有する半導体材料の層を堆積し;
(d)場合によっては、半導体材料の層の上にTCO層を堆積し;
(e)半導体材料の層又は存在する場合にはTCO層の上に、第1の電気接点層を堆積し;
(f)少なくとも第1の電気接点層及び存在する場合にはTCO層を貫通して多数の孔を形成し;
(g)第1の電気接点層の上、及び孔の中に、絶縁材料の層を堆積し;
(h)絶縁層の上に第2の電気接点層を堆積し;
(i)第2の電気接点層からウエハへ多数の点接点を形成する;
ことを含む、太陽電池の製造方法。 - ウエハがシリコンを含み、拡散距離を有し、ウエハの厚さが拡散距離よりも小さい請求項23に記載の方法。
- 孔が円形である請求項23に記載の方法。
- 孔が、中心から中心まで約100ミクロン〜約1mmの間隔を有している請求項24に記載の方法。
- 点接点が、絶縁層を通して第2の接点層をレーザー加熱することによって形成される請求項23に記載の方法。
- 絶縁層が窒化ケイ素である請求項23に記載の方法。
- 導電層と第2の層との間に少なくとも第3の層が配置されている、導電層と第2の層との間に電気接点を形成する方法であって、
第3の層内に第1の開口を形成し;
第3の層の上に絶縁材料を含む絶縁層を形成して、絶縁材料を第1の開口に充填し;
第2の開口の周囲に沿った絶縁材料の領域を残して、第1の開口の領域の内部の絶縁層内に第2の開口を形成し;
絶縁層の上に導電材料の層を形成し、第2の開口を充填し、それによって導電層と第2の層との間の電気接点を形成する;
ことを含む方法。 - 第2の開口が第2の層まで延在している請求項29に記載の方法。
- 導電層と第2の層との間に少なくとも第3の層が配置されている、導電層と第2の層との間に電気接点を形成する方法であって、
第3の層内に第1の開口を形成し;
第3の層の上に絶縁材料を含む絶縁層を形成して、絶縁材料を第1の開口に充填し;
絶縁層の上に導電材料の層を形成し;
第1の開口の上の領域内の導電層を加熱して、導電層を液化して第1の開口内の絶縁材料を貫通して溶融し、第2の層との電気接点を形成する;
ことを含む方法。 - 請求項29に記載の方法によって製造される電気接点。
- 請求項31に記載の方法によって製造される電気接点。
- (a)半導体材料を含むウエハの第1の表面上に第1のパッシベーション層を堆積し;
(b)ウエハの第2の表面上に第2のパッシベーション層を堆積し;
(c)第2のパッシベーション層の上に、ウエハと反対の導電型を有する半導体材料の層を堆積し;
(d)場合によっては、ウエハと反対の導電型を有する半導体材料の層の上にTCO層を堆積し;
(e)ウエハと反対の導電型を有する半導体材料又は存在する場合にはTCO層の上に、第1の電気接点層を堆積し;
(f)少なくとも工程(d)及び(e)で形成された層を所望のパターンで除去し、それによって、工程(d)及び(e)で形成された層を有しないウエハ上の領域を露出させ;
(g)工程(f)で形成された露出領域の上に第3のパッシベーション層を堆積し;
(h)場合によっては、第3のパッシベーション層の上に、ウエハと同じ導電型を有する半導体層を堆積し;
(i)場合によっては、第3のパッシベーション層の上、又は存在する場合にはウエハと同じ導電型を有する半導体層の上に第2のTCO層を堆積し;
(j)第3のパッシベーション層の上、又は存在する場合にはウエハと同じ導電型を有する半導体層の上、又は存在する場合には第2のTCO層の上に第2の電気接点層を堆積し;
(k)第1の電気接点層と第2の電気接点層との間にギャップを形成して、第1の電気接点層を第2の電気接点層から電気的に分離し、それによって電気的に分離された電気接点を形成する;
ことを含む、太陽電池の製造方法。 - 電気接点が相互嵌合パターンである請求項34に記載の方法。
- 工程(f)において層をレーザー切断によって除去し、工程(k)においてギャップをレーザー切断によって形成する請求項34に記載の方法。
- (a)半導体材料を含むウエハの第1の表面上に第1のパッシベーション層を堆積し;
(b)ウエハの第2の表面上に、所望のパターンで第1の電気接点を形成し;
(c)ウエハの第2の表面上に第2のパッシベーション層を堆積し;
(c)第2のパッシベーション層の上に、ウエハと反対の導電型を有する半導体材料の層を堆積し;
(d)場合によっては、ウエハと反対の導電型を有する半導体材料の層の上に、TCO層を堆積し;
(e)半導体材料又は存在する場合にはTCO層の上に、第2の電気接点層を堆積し;
(k)第1の電気接点層と第2の電気接点層との間にギャップを形成して、第1の電気接点層を第2の電気接点層から電気的に分離し、それによって電気的に分離された電気接点を形成する;
ことを含む太陽電池の製造方法。 - 電気接点が相互嵌合パターンである請求項37に記載の方法。
- 工程(k)においてギャップをレーザー切断によって形成する請求項37に記載の方法。
- 孔が、約5ミクロン〜約50ミクロンの直径を有する請求項25に記載の方法。
- ウエハと同じ導電型を有し、点接点とウエハとの間に配置されているドープ半導体層を含む請求項22に記載の太陽電池。
- 工程(f)において、工程(b)〜(e)で形成された層を除去する請求項34に記載の方法。
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Also Published As
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DE112005002592T5 (de) | 2007-09-06 |
WO2006135443A3 (en) | 2007-02-22 |
WO2006135443A2 (en) | 2006-12-21 |
US20060130891A1 (en) | 2006-06-22 |
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