JPWO2016208219A1 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JPWO2016208219A1 JPWO2016208219A1 JP2017524658A JP2017524658A JPWO2016208219A1 JP WO2016208219 A1 JPWO2016208219 A1 JP WO2016208219A1 JP 2017524658 A JP2017524658 A JP 2017524658A JP 2017524658 A JP2017524658 A JP 2017524658A JP WO2016208219 A1 JPWO2016208219 A1 JP WO2016208219A1
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- amorphous semiconductor
- semiconductor layer
- type amorphous
- photoelectric conversion
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Abstract
Description
本発明によれば、厚みが薄い半導体基板を用いた場合であっても、電極の応力を軽減し、半導体基板の反りや撓みを抑制することができる。
図1は、本発明の第1実施形態に係る光電変換装置の平面を示す模式図である。また、図2は、図1に示す光電変換装置1のA−A断面を示す模式図である。
図12Aは、第2実施形態に係る光電変換装置の平面を示す模式図である。また、図12Bは、図12Aに示す光電変換装置1AのC−C断面を示す模式図である。光電変換装置1Aは、第1実施形態の光電変換装置1(図1参照)と以下の点で異なる。
図14Aは、第3実施形態に係る光電変換装置の平面を示す模式図である。また、図14Bは、図14Aに示す光電変換装置1AのD−D断面を示す模式図である。
図16Aは、第4実施形態における光電変換装置の平面を示す模式図である。また、図16Bは、図16Aに示す光電変換装置1CのE−E断面を示す模式図である。図16A及び16Bにおいて、第1実施形態と同様の構成には、第1実施形態と同じ符号を付している。以下、第1実施形態と異なる構成について説明する。
図18Aは、第5実施形態における光電変換装置の平面を示す模式図である。また、図18Bは、図18Aに示す光電変換装置1DのG−G断面を示す模式図である。図18A、18Bにおいて、第4実施形態と同様の構成には、第4実施形態と同じ符号を付している。以下、第4実施形態と異なる構成について説明する。
本実施形態では、上述した第1実施形態から第5実施形態の少なくとも1つの光電変換装置を備えた光電変換モジュールについて説明する。図21は、第6実施形態に係る光電変換モジュールの構成を示す概略図である。光電変換モジュール1000は、複数の光電変換装置1001と、カバー1002と、出力端子1003,1004とを備える。
図22Aは、第7実施形態に係る太陽光発電システムの構成を示す概略図である。太陽光発電システム1100は、光電変換モジュールアレイ1101と、接続箱1102と、パワーコンディショナー1103と、分電盤1104と、電力メーター1105とを備える。太陽光発電システム1100には、「ホーム・エネルギー・マネジメント・システム(HEMS:Home Energy Management System)」、「ビルディング・エネルギー・マネジメント・システム(BEMS:Building Energy Management System)」等の機能を付加することができる。これにより、太陽光発電システム1100の発電量の監視、太陽光発電システム1100に接続される各電気機器類の消費電力量の監視・制御等を行うことができ、エネルギー消費量を削減することができる。
図24Aは、第8実施形態に係る太陽光発電システムの構成を示す概略図である。太陽光発電システム1200は、サブシステム1201〜120n(nは2以上の整数)と、パワーコンディショナー1211〜121nと、変圧器1221とを備える。太陽光発電システム1200は、図22A、22Bに示す太陽光発電システム1100よりも規模が大きい太陽光発電システムである。
以上、本発明の第1〜第5実施形態にかかる光電変換装置、及び、第6〜第8実施形態において、第1〜第5実施形態のいずれかの光電変換装置を用いた光電変換モジュール、及び太陽光発電システムについて説明した。本発明の光電変換装置は上述の各実施形態のみに限定されず、発明の範囲内で種々の変更が可能である。また、各実施形態は、適宜組み合わせて実施することが可能である。
Claims (5)
- 半導体基板と、
前記半導体基板の一方の面の側に形成され、第1導電型を有する第1非晶質半導体層が少なくとも1つ形成された第1非晶質半導体部と、
前記半導体基板の前記一方の面の側に形成され、かつ前記半導体基板の面内方向において前記第1非晶質半導体部に隣接して形成され、前記第1導電型と異なる第2導電型を有する第2非晶質半導体層が少なくとも1つ形成された第2非晶質半導体部と、
前記第1非晶質半導体部の上に、互いに離間して配置された複数の第1電極と、
前記第2非晶質半導体部の上に、互いに離間して配置された複数の第2電極と、を備え、
一の前記第1非晶質半導体層の上に、複数の前記第1電極が配置され、一の前記第2非晶質半導体層の上に、複数の前記第2電極が配置されている、光電変換装置。 - 請求項1に記載の光電変換装置において、
前記第1非晶質半導体部は、互いに離間して配置された複数の第1非晶質半導体層が形成され、前記複数の第1非晶質半導体層のそれぞれの上に、少なくとも1つの前記第1電極が配置され、
前記第2非晶質半導体部は、互いに離間して配置された複数の第2非晶質半導体層が形成され、前記複数の第2非晶質半導体層のそれぞれの上に、少なくとも1つの前記第2電極が配置されている、光電変換装置。 - 請求項1又は2に記載の光電変換装置において、
隣接する前記第1電極と前記第1電極の間、又は、隣接する前記第2電極と前記第2電極の間の距離は500μm以下である、光電変換装置。 - 請求項1から3のいずれか一項に記載の光電変換装置において、
前記半導体基板は、前記第1導電型を有し、
前記第1非晶質半導体部の上に配置される前記第1電極の数は、前記第2非晶質半導体部の上に配置される前記第2電極の数よりも多い、光電変換装置。 - 請求項1から4のいずれか一項に記載の光電変換装置において、
前記第1非晶質半導体層及び前記第2非晶質半導体層の少なくとも一方の半導体層、又は、前記第1電極及び前記第2電極の少なくとも一方の電極における、前記複数の第1電極又は前記複数の第2電極の配列方向の長さは、前記配列方向に直交する方向の長さの300倍以下である、光電変換装置。
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