JP6639496B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP6639496B2 JP6639496B2 JP2017524658A JP2017524658A JP6639496B2 JP 6639496 B2 JP6639496 B2 JP 6639496B2 JP 2017524658 A JP2017524658 A JP 2017524658A JP 2017524658 A JP2017524658 A JP 2017524658A JP 6639496 B2 JP6639496 B2 JP 6639496B2
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- amorphous semiconductor
- semiconductor layer
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- photoelectric conversion
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- 238000006243 chemical reaction Methods 0.000 title claims description 192
- 239000004065 semiconductor Substances 0.000 claims description 517
- 239000000758 substrate Substances 0.000 claims description 133
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 96
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
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Description
本発明によれば、厚みが薄い半導体基板を用いた場合であっても、電極の応力を軽減し、半導体基板の反りや撓みを抑制することができる。
図1は、本発明の第1実施形態に係る光電変換装置の平面を示す模式図である。また、図2は、図1に示す光電変換装置1のA−A断面を示す模式図である。
図12Aは、第2実施形態に係る光電変換装置の平面を示す模式図である。また、図12Bは、図12Aに示す光電変換装置1AのC−C断面を示す模式図である。光電変換装置1Aは、第1実施形態の光電変換装置1(図1参照)と以下の点で異なる。
図14Aは、第3実施形態に係る光電変換装置の平面を示す模式図である。また、図14Bは、図14Aに示す光電変換装置1AのD−D断面を示す模式図である。
図16Aは、第4実施形態における光電変換装置の平面を示す模式図である。また、図16Bは、図16Aに示す光電変換装置1CのE−E断面を示す模式図である。図16A及び16Bにおいて、第1実施形態と同様の構成には、第1実施形態と同じ符号を付している。以下、第1実施形態と異なる構成について説明する。
図18Aは、第5実施形態における光電変換装置の平面を示す模式図である。また、図18Bは、図18Aに示す光電変換装置1DのG−G断面を示す模式図である。図18A、18Bにおいて、第4実施形態と同様の構成には、第4実施形態と同じ符号を付している。以下、第4実施形態と異なる構成について説明する。
本実施形態では、上述した第1実施形態から第5実施形態の少なくとも1つの光電変換装置を備えた光電変換モジュールについて説明する。図21は、第6実施形態に係る光電変換モジュールの構成を示す概略図である。光電変換モジュール1000は、複数の光電変換装置1001と、カバー1002と、出力端子1003,1004とを備える。
図22Aは、第7実施形態に係る太陽光発電システムの構成を示す概略図である。太陽光発電システム1100は、光電変換モジュールアレイ1101と、接続箱1102と、パワーコンディショナー1103と、分電盤1104と、電力メーター1105とを備える。太陽光発電システム1100には、「ホーム・エネルギー・マネジメント・システム(HEMS:Home Energy Management System)」、「ビルディング・エネルギー・マネジメント・システム(BEMS:Building Energy Management System)」等の機能を付加することができる。これにより、太陽光発電システム1100の発電量の監視、太陽光発電システム1100に接続される各電気機器類の消費電力量の監視・制御等を行うことができ、エネルギー消費量を削減することができる。
図24Aは、第8実施形態に係る太陽光発電システムの構成を示す概略図である。太陽光発電システム1200は、サブシステム1201〜120n(nは2以上の整数)と、パワーコンディショナー1211〜121nと、変圧器1221とを備える。太陽光発電システム1200は、図22A、22Bに示す太陽光発電システム1100よりも規模が大きい太陽光発電システムである。
以上、本発明の第1〜第5実施形態にかかる光電変換装置、及び、第6〜第8実施形態において、第1〜第5実施形態のいずれかの光電変換装置を用いた光電変換モジュール、及び太陽光発電システムについて説明した。本発明の光電変換装置は上述の各実施形態のみに限定されず、発明の範囲内で種々の変更が可能である。また、各実施形態は、適宜組み合わせて実施することが可能である。
Claims (5)
- 半導体基板と、
前記半導体基板の一方の面の側に形成され、第1導電型を有する複数の第1非晶質半導体部と、
前記半導体基板の前記一方の面の側に形成され、前記第1導電型と異なる第2導電型を有する複数の第2非晶質半導体部と、
前記複数の第1非晶質半導体部の上に設けられ、前記複数の第1非晶質半導体部の数よりも多い複数の第1電極と、
前記複数の第2非晶質半導体部の上に設けられ、前記複数の第2非晶質半導体部の数よりも多い複数の第2電極と、を備え、
前記複数の第2非晶質半導体部は、前記半導体基板の面内方向における第1の方向に前記複数の第1非晶質半導体部と隣接し、
前記複数の第1非晶質半導体部は、前記第1の方向と異なる第2の方向に互いに離間して配置され、
前記複数の第2非晶質半導体部は、前記第2の方向に互いに離間して配置され、
前記複数の第1電極は、前記複数の第1非晶質半導体部の上において前記第2の方向に互いに離間して配置され、
前記複数の第2電極は、前記複数の第2非晶質半導体部の上において前記第2の方向に互いに離間して配置されている、光電変換装置。 - 請求項1に記載の光電変換装置において、
前記第2の方向において隣接する前記第1電極と前記第1電極の間、又は、前記第2の方向において隣接する前記第2電極と前記第2電極の間の距離は500μm以下である、光電変換装置。 - 請求項1又は2に記載の光電変換装置において、
前記半導体基板は、前記第1導電型を有し、
前記第1非晶質半導体部の上に配置される前記第1電極の数は、前記第2非晶質半導体部の上に配置される前記第2電極の数よりも多い、光電変換装置。 - 請求項1から3のいずれか一項に記載の光電変換装置において、
第1非晶質半導体部、及び第2非晶質半導体部の前記第2方向の長さは、前記第1方向の長さの300倍以下である、光電変換装置。 - 請求項1から4のいずれか一項に記載の光電変換装置において、
第1電極、及び第2電極の前記第2方向の長さは、前記第1方向の長さの300倍以下である、光電変換装置。
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