JP2016219810A - 太陽電池と太陽電池モジュール - Google Patents
太陽電池と太陽電池モジュール Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 156
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 239000004020 conductor Substances 0.000 claims description 65
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 239000002210 silicon-based material Substances 0.000 claims description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims description 16
- 150000004706 metal oxides Chemical class 0.000 claims description 16
- 239000000969 carrier Substances 0.000 claims description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 401
- 239000012535 impurity Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 18
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000007769 metal material Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- 229910004205 SiNX Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
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- 238000009792 diffusion process Methods 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004012 SiCx Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
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- 239000011787 zinc oxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004286 SiNxOy Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
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- -1 for example Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】本発明の一例に係る太陽電池は、半導体基板と、第1導電型領域とは反対の極性を有する第2導電型領域と、第1導電型領域に接続される第1電極と、第2導電型領域に接続される第2電極とを含み、半導体基板の背面は、半導体基板の背面領域全体の領域中で端の片側にいずれかの一方向に長く位置する第1領域(first area)と、第1領域を除外した残りの領域に位置する第2領域(second area)に分けられ、第1電極は、第1領域及び第2領域に形成されるが、第1領域の内の少なくとも一部の領域に第1電極の一部が露出され、第2電極は、第2領域に第1電極と離隔されて形成され、第2領域の内の少なくとも一部の領域に第2電極が露出される。
【選択図】図1
Description
Claims (29)
- 結晶質シリコン材質を含有する半導体基板と、
前記半導体基板の背面に配置される第1導電型領域(first conductive region)と、
前記半導体基板の背面から前記第1導電型領域を除外した領域に配置され、前記第1導電型領域とは反対の極性を有する第2導電型領域(second conductive region)と、
前記第1導電型領域に接続される第1電極と、
前記第2導電型領域に接続される第2電極とを含み、
前記半導体基板の背面は、前記半導体基板の背面領域全体の中で端の片側にいずれか一方に長く位置する第1領域(first area)と前記第1領域を除外した残りの領域に位置する第2領域(second area )に分かれ、
前記第1電極は、前記第1領域及び第2領域に形成されるが、前記第1領域の内の少なくとも一部の領域に第1電極の一部が露出され、
前記第2電極は、前記第2領域に前記第1電極と離隔されて形成され、前記第2領域の内の少なくとも一部の領域に前記第2電極が露出される太陽電池。 - 前記第1電極は、前記第1領域と第2領域に全体的に形成されるが、前記第2領域に複数の開口穴を備える第1電極層を含み、
前記第2電極は、前記第2領域に形成された前記第1電極層の複数の開口穴を介して前記第2導電型領域に接続され、前記第2領域に位置する第1電極層の上に離隔して積層された面形状に形成される第2電極層を含む、請求項1に記載の太陽電池。 - 前記第1電極層の一部は、前記第1領域の内の少なくとも一部の領域に露出され、
前記第2電極層は、前記第2領域の内、少なくとも一部に形成される、請求項2に記載の太陽電池。 - 前記第1電極は、前記第1電極層と前記第1導電型領域の間に位置する第1透明電極層をさらに含み、
前記第2電極は、前記第2電極層と前記第2導電型領域の間に位置する複数の第2透明電極層をさらに含む、請求項2に記載の太陽電池。 - 前記半導体基板の平面で見たとき、前記第1電極層と前記第1透明電極層は、同一のパターンを有する、請求項4に記載の太陽電池。
- 前記第2透明電極層は、前記第2領域に備えられた前記第1透明電極層の開口穴内に形成され、前記第2導電型領域に接続される、請求項4に記載の太陽電池。
- 絶縁層が、前記半導体基板の第2領域の第1透明電極層の上に位置し、
前記絶縁層は、前記複数の第2透明電極層を露出する複数の開口部を備える、請求項4に記載の太陽電池。 - 前記複数の第2透明電極層は、格子の形で互いに離隔して配列される、請求項4に記載の太陽電池。
- 前記第1導電型領域は、前記第1、第2領域に全体的に形成されるが、前記第2領域に複数の開口穴を備え、
前記第2導電型領域は、前記第2領域に備えられた前記第1導電型領域の複数の開口穴内に形成される、請求項1に記載の太陽電池。 - 前記第1、第2導電型領域は、非晶質シリコン、単結晶シリコン、多結晶シリコンまたは金属酸化物の内、いずれか1つを含む、請求項9に記載の太陽電池。
- 前記絶縁層は、第2領域で互いに離隔されて積層される前記第1電極層と前記第2電極層との間の空間に位置する、請求項7に記載の太陽電池。
- 前記半導体基板の背面全体面と前記第1導電型領域及び前記第2導電型領域の前面との間には、前記半導体基板から生成されたキャリア(carrier)が通過するトンネル層がさらに位置する、請求項7に記載の太陽電池。
- 前記絶縁層の厚さは、前記トンネル層の厚さより厚い、請求項12に記載の太陽電池。
- 前記第1、第2透明電極層は、透明な導電性酸化膜を含む、請求項4に記載の太陽電池。
- 前記第1、第2透明電極層のそれぞれの厚さは、10nm〜100nmである、請求項4に記載の太陽電池。
- 前記第1、第2電極層のそれぞれの厚さは、前記第1、第2透明電極層のそれぞれの厚さより大きく、100nm〜5μmである、請求項4に記載の太陽電池。
- 前記第1導電型領域は、前記第1領域に全体的に形成され、前記第2領域にいずれかの1方向に長く形成され、
前記第2導電型領域は、前記第2領域に前記第1導電型領域と隣接して並行するように長く形成される、請求項4に記載の太陽電池。 - 前記第1透明電極層は、前記第1導電型領域と重畳されて接続されるが、前記第1領域に全体的に形成され、前記第2領域にいずれか1方向に長く形成され、
前記第2透明電極層は、前記第2領域で前記第2導電型領域と重畳されて接続されるが、前記第1透明電極層と離隔されて長く形成される、請求項17に記載の太陽電池。 - 前記第1項の構造を有し、第1方向に配列される複数の太陽電池と、
前記複数の太陽電池の内、前記第1方向に隣接して配列される第1、第2太陽電池を互いに直列接続するインターコネクタとを含み、
前記インターコネクタは、一端が前記第1太陽電池の前記第1領域に露出される前記第1電極の一部に重畳されて接続され、他端が前記第2太陽電池の前記第2領域に露出される前記第2電極に重畳され、接続される太陽電池モジュール。 - 前記インターコネクタが前記第1太陽電池の前記第1領域と重畳される前記第1方向への長さは、前記インターコネクタが前記第2太陽電池の前記第2領域と重畳される前記第1方向への長さと互いに異なる、請求項19に記載の太陽電池モジュール。
- 前記第1、第2電極のそれぞれは、互いに離隔して積層された面形状に形成される第1、第2電極層を含み、
前記インターコネクタは、前記第1方向に長く伸びている第1方向伝導体を含み、
前記第1方向伝導体の一端は、前記第1太陽電池の前記第1領域に露出された前記第1電極層に接続され、
前記第1方向伝導体の他端は、前記第2太陽電池の前記第2領域に形成された前記第2電極層に接続される、請求項19に記載の太陽電池モジュール。 - 前記第1方向伝導体は複数であり、
前記複数の第1方向の伝導体のいずれか1つの第1方向伝導体の一端が前記第1太陽電池の前記第1領域と重畳される長さは、前記いずれか1つの第1方向伝導体の他端が前記第2太陽電池の前記第2領域と重畳される長さと互いに異なる、請求項19に記載の太陽電池モジュール。 - 前記インターコネクタは
前記第1方向伝導体の両端に形成され、前記第1方向と交差する第2方向に長く伸びている第2方向伝導体をさらに含み、
前記第2方向伝導体は、前記第1方向伝導体と一体に形成される、請求項22に記載の太陽電池モジュール。 - 前記第1方向伝導体の両端に接続された二つの前記第2方向伝導体は、同じ幅を有する、請求項23に記載の太陽電池モジュール。
- 前記第1方向伝導体は一つであり、
前記第1方向伝導体の両端に接続された2つの前記第2方向伝導体の1つの幅は、他の1つの幅と異なる、請求項23に記載の太陽電池モジュール。 - 前記第1、第2太陽電池のそれぞれにおいて、
前記第2電極は、前記第2領域の内、一部の領域に露出される、請求項19に記載の太陽電池モジュール。 - 前記半導体基板の第2領域で前記第2電極が露出される一部の領域を除外した残りの領域は、絶縁層で覆われている、請求項26に記載の太陽電池モジュール。
- 前記インターコネクタは、面形状を有し、
前記面形状のインターコネクタの一端は、前記第1、第2太陽電池の内、いずれか1つの太陽電池の前記第1領域に露出された前記第1電極層に接続され、
前記インターコネクタの他端は、他の太陽電池の前記第2領域の一部に露出された前記第2電極層の一部に接続される、請求項27に記載の太陽電池モジュール。 - 前記面形状のインターコネクタにおいて、
前記第1、第2太陽電池と重畳されない領域には、複数の開口部が形成される、請求項28に記載の太陽電池モジュール。
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