JP2008502131A - 発光装置用の発光セラミック - Google Patents
発光装置用の発光セラミック Download PDFInfo
- Publication number
- JP2008502131A JP2008502131A JP2007514277A JP2007514277A JP2008502131A JP 2008502131 A JP2008502131 A JP 2008502131A JP 2007514277 A JP2007514277 A JP 2007514277A JP 2007514277 A JP2007514277 A JP 2007514277A JP 2008502131 A JP2008502131 A JP 2008502131A
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- JP
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- Prior art keywords
- ceramic layer
- layer
- light emitting
- ceramic
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000919 ceramic Substances 0.000 title claims abstract description 126
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 154
- 239000000758 substrate Substances 0.000 claims description 24
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 9
- 230000001070 adhesive effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000005387 chalcogenide glass Substances 0.000 claims description 4
- -1 phosphorus compound Chemical class 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000004038 photonic crystal Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 150000001463 antimony compounds Chemical class 0.000 claims description 2
- 150000001495 arsenic compounds Chemical class 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 2
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 claims 3
- IBKBIJITWRZZBB-UHFFFAOYSA-N azanylidynestibane Chemical compound [Sb]#N IBKBIJITWRZZBB-UHFFFAOYSA-N 0.000 claims 1
- 239000011230 binding agent Substances 0.000 claims 1
- 229910001634 calcium fluoride Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 15
- 229910052594 sapphire Inorganic materials 0.000 description 15
- 239000010980 sapphire Substances 0.000 description 15
- 238000000605 extraction Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011575 calcium Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229940093920 gynecological arsenic compound Drugs 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 235000011449 Rosa Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
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- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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Abstract
Description
Claims (24)
- n−型領域とp−型領域の間に設置された発光層を有する半導体発光装置、および
前記発光層によって放射される光の光路に設置された第1のセラミック層、
を有する構造であって、
前記第1のセラミック層は、波長変換材料を有する構造。 - 前記第1のセラミック層は、蛍光体粒子の硬質凝集体を有することを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層は、実質的に結合材を含まないことを特徴とする請求項2に記載の構造。
- 前記第1のセラミック層は、大気圧を超える圧力下で、粉末蛍光体粒子の表面が軟化し始め、前記粉末蛍光体粒子が相互に結合するまで、前記粉末蛍光体粒子を加熱することにより形成されることを特徴とする請求項2に記載の構造。
- さらに、前記第1のセラミック層と前記半導体発光装置の間に設置された接着層を有することを特徴とする請求項1に記載の構造。
- 前記接着層は、有機接着材、エポキシ、シリコーン、無機接着材およびゾルゲルガラスのうちの一つであることを特徴とする請求項5に記載の構造。
- 前記接着層は、ショットガラスSF59、ショットガラスLaSF 3、ショットガラスLaSF N18、カルコゲナイドガラス、(Ge,Sb,Ga)(S,Se)カルコゲナイドガラス、III−V族半導体、GaP、InGaP、GaAs、GaN、II−VI族半導体、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、IV族半導体、Si、Ge、有機半導体、金属酸化物、タングステン酸化物、チタン酸化物、ニッケル酸化物、ジルコニウム酸化物、インジウムスズ酸化物、クロム酸化物、金属フッ化物、マグネシウムフッ化物、カルシウムフッ化物、金属、Zn、In、Mg、Sn、イットリウムアルミニウムガーネット、リン化合物、ヒ素化合物、アンチモン化合物、窒化物および高屈折率有機化合物のうちの一つを有することを特徴とする請求項5に記載の構造。
- 前記第1のセラミック層は、実質的に接着材を含まないことを特徴とする請求項5に記載の構造。
- さらに、前記半導体発光装置と前記第1のセラミック層との間に界面を有し、該界面は、室温を超える温度および大気圧を超える圧力で、前記半導体発光装置と、前記第1のセラミック層とを相互に圧縮することにより形成されることを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層の表面は、レンズを有することを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層の表面は、ドームを有することを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層の表面は、フレネルレンズを有することを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層の表面は、フォトニック結晶構造を有することを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層の表面は、構造化されていることを特徴とする請求項1に記載の構造。
- 前記第1のセラミックは、ドーパントがドープされた蛍光体を有し、ドーパントの濃度は傾斜化されていることを特徴とする請求項1に記載の構造。
- 前記濃度は、前記第1のセラミック層の第1の部分での第1の濃度から、前記第1のセラミック層の第2の部分での第2の濃度まで傾斜化され、前記第1の濃度は、前記第2の濃度よりも高く、
前記第1の部分は、前記第2の部分よりも前記半導体発光装置に近いことを特徴とする請求項15に記載の構造。 - 前記半導体発光装置は、成長基板を有し、前記第1のセラミック層は、前記成長基板に設置されることを特徴とする請求項1に記載の構造。
- 前記半導体発光装置は、ホスト格子を有し、前記第1のセラミック層は、前記半導体発光装置の前記ホスト格子とは反対側の表面に設置されることを特徴とする請求項1に記載の構造。
- さらに、前記発光層によって放射される光の光路に設置された、第2のセラミック層を有することを特徴とする請求項1に記載の構造。
- 前記第1のセラミック層は、第1の波長変換材料を有し、
前記第2のセラミック層は、第2の波長変換材料を有することを特徴とする請求項19に記載の構造。 - 前記第1のセラミック層は、波長変換材料を有し、
前記第2のセラミック層は、波長変換材料を有さないことを特徴とする請求項19に記載の構造。 - 前記第1および第2のセラミック層のうち一つの表面の表面積は、前記半導体発光装置の、該装置から光が抽出される表面の表面積よりも大きいことを特徴とする請求項19に記載の構造。
- 前記波長変換材料は、(Lu1−x−y−a−bYxGdy)3(Al1−zGaz)5O12:CeaPrb、ただし0<x<1、0<y<1、0<z≦0.1、0<a≦0.2、0<b≦0.1;Lu3Al5O12:Ce3+;およびY3Al5O12:Ce3+;のうちの一つを有することを特徴とする請求項1に記載の構造。
- さらに、前記第1のセラミック層と前記半導体発光装置の間に設置された、ダイクロイックフィルタを有することを特徴とする請求項1に記載の構造。
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Application Number | Priority Date | Filing Date | Title |
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US10/861,172 | 2004-06-03 | ||
US10/861,172 US7361938B2 (en) | 2004-06-03 | 2004-06-03 | Luminescent ceramic for a light emitting device |
PCT/IB2005/051702 WO2005119797A1 (en) | 2004-06-03 | 2005-05-25 | Luminescent ceramic for a light emitting device |
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JP2011279089A Division JP2012060180A (ja) | 2004-06-03 | 2011-12-21 | 発光装置用の発光セラミック |
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JP2005192799A Abandoned JP2006005367A (ja) | 2004-06-03 | 2005-06-03 | 発光デバイスのための発光セラミック |
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US (4) | US7361938B2 (ja) |
EP (2) | EP1756877A1 (ja) |
JP (3) | JP5009788B2 (ja) |
KR (1) | KR101228849B1 (ja) |
CN (2) | CN102208521A (ja) |
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WO (1) | WO2005119797A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012501090A (ja) * | 2008-08-29 | 2012-01-12 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 波長変換半導体発光装置及びフィルタを含む光源 |
WO2012017595A1 (ja) * | 2010-08-06 | 2012-02-09 | 株式会社小糸製作所 | 蛍光部材および発光モジュール |
JP2012527763A (ja) * | 2009-05-19 | 2012-11-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Ledのための光散乱及び変換板 |
JP2013518797A (ja) * | 2010-02-04 | 2013-05-23 | 日東電工株式会社 | 発光セラミック積層体およびその作製方法 |
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JP5009788B2 (ja) | 2012-08-22 |
US9359260B2 (en) | 2016-06-07 |
US20160254418A1 (en) | 2016-09-01 |
WO2005119797A1 (en) | 2005-12-15 |
US9722148B2 (en) | 2017-08-01 |
US10290775B2 (en) | 2019-05-14 |
EP2775541B1 (en) | 2020-04-08 |
EP2775541A3 (en) | 2014-12-10 |
KR101228849B1 (ko) | 2013-02-01 |
JP2012060180A (ja) | 2012-03-22 |
TW200614543A (en) | 2006-05-01 |
CN1977393A (zh) | 2007-06-06 |
EP2775541A2 (en) | 2014-09-10 |
US7361938B2 (en) | 2008-04-22 |
US20080138919A1 (en) | 2008-06-12 |
CN102208521A (zh) | 2011-10-05 |
KR20070042956A (ko) | 2007-04-24 |
US20170309791A1 (en) | 2017-10-26 |
EP1756877A1 (en) | 2007-02-28 |
US20050269582A1 (en) | 2005-12-08 |
JP2006005367A (ja) | 2006-01-05 |
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