CN1977393A - 用于发光器件的发光陶瓷 - Google Patents

用于发光器件的发光陶瓷 Download PDF

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Publication number
CN1977393A
CN1977393A CNA2005800177833A CN200580017783A CN1977393A CN 1977393 A CN1977393 A CN 1977393A CN A2005800177833 A CNA2005800177833 A CN A2005800177833A CN 200580017783 A CN200580017783 A CN 200580017783A CN 1977393 A CN1977393 A CN 1977393A
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Prior art keywords
ceramic layer
light emitting
semiconductor device
ceramic
light
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CNA2005800177833A
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Inventor
G·O·穆勒
R·B·穆勒－马克
M·R·克拉默斯
P·J·施米特
H·贝克特尔
J·迈耶
J·德格拉夫
T·A·科普
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Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Publication of CN1977393A publication Critical patent/CN1977393A/zh
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Abstract

包括沉积在n型区和p型区之间的发光层的半导体发光器件与沉积在发光层发出的光的路径上的陶瓷层结合。该陶瓷层包括一种波长转换材料例如磷光体。根据发明实施方式的发光陶瓷层比现有技术的磷光体层对温度具有更强的鲁棒性或更弱的敏感性。另外，发光陶瓷比现有技术的磷光体层显示出更少的散射并从而提高了转换效率。

Description

用于发光器件的发光陶瓷
技术领域
本发明涉及波长转换的半导体发光器件。
背景技术
发光二极管(LED)是已知可以发光的固体器件，其在特定的光谱区域具有一个峰值波长。LED典型地用作照明设备、指示器和显示器。传统上，最有效率的LED发出在光谱区域的红光区具有一个峰值波长的光，例如，红光。然而，III族氮化物LED已经发展到能有效地发出具有一个在光谱的UV到绿色的区域的峰值波长的光。III族氮化物LED可以提供比传统LED更亮的输出光。
此外，由于III族氮化物器件发出的光通常具有比红光短的波长，因此III族氮化物LED产生的光可以很容易地用来转换产生具有较长波长的光。采用已知的发光/荧光工艺将具有第一峰值波长的光(初级光)转换为具有较长峰值波长的光(二级光)，对本领域技术人员来讲是公知的。荧光工艺包括通过波长转换材料例如磷光体吸收初级光，激发磷光体材料的发光中心，从而发出二级光。二级光的峰值波长取决于磷光体材料。可以选择磷光体材料的类型以产出具有具体峰值波长的二级光。
参考图1，一种现有技术的磷光体LED10在US6351069中示出。该LED10包括当被激活时发出蓝色初级光的III族氮化物管芯12。该III族氮化物管芯12定位在反射器杯引线框架14上，并且电连接到引线16和18。引线16和18将功率传导到III族氮化物管芯12。III族氮化物管芯12被层20覆盖，通常是包括波长变换材料22的透明树脂。用于构成层20的波长变换材料的类型可以变化，这取决于通过荧光材料22产生二级光的期望光谱分布。III族氮化物管芯12和荧光层20被透镜24包封。该透镜24典型地由透明环氧树脂或硅树脂构成。
在操作中，功率被供应到III族氮化物管芯12以激活该管芯。在激活时，管芯12从管芯顶表面发出初级光。发出的初级光的一部分被层20中的波长变换材料22吸收。然后波长变换材料22响应初级光的吸收发出二级光，即，具有较长的峰值波长的转换后的光。发出的初级光中未被吸收的剩余部分与二级光一起穿过波长转换层。透镜24将未被吸收的初级光和二级光引导到如箭头26所示的共同的方向，作为输出光。因而，输出光是由管芯12发出的初级光与波长转换层20发出的二级光构成的复合光。波长转换材料可以设置成很少或几乎没有初级光从器件中逃逸，如发出UV初级光的管芯与一种或更多的发出可见二级光的波长转换材料结合的例子。
由于III族氮化物LED工作在较高功率和较高温度中，用在层20中的有机密封剂的透明度会趋向劣化，不利地降低了器件的光提取效率并潜在地不利地改变从器件发出的光的外观。几个备选的波长转换材料配置被提了出来，例如，如在US6630691中描述的在单晶体发光衬底上生长LED器件，如在US6696703中描述的薄膜磷光体层，如在US6576488中描述的通过电泳沉积而沉积共形层，或者如US6650044中描述的模板印制(stenciling)。然而，现有解决方案中有一个主要的缺陷是磷光体/密封剂系统的光学不均匀性，其导致了散射，潜在地导致转换效率的损失。
发明内容
根据本发明的具体实施方式，半导体发光器件包括，沉积在n型区和p型区之间的发光层与沉积在发光层发出的光的路径上的陶瓷层结合。该陶瓷层包括一种波长转换材料例如磷光体。根据发明具体实施方式的发光陶瓷层比现有的磷光体层对温度具有更强的鲁棒性或更弱的敏感性。另外，发光陶瓷显示较少的散射，因此和现有技术的磷光体层相比提高了转换效率。
附图说明
图1展示了现有技术的磷光体转换的半导体发光器件。
图2展示了包括陶瓷磷光体层的倒装芯片半导体发光器件。
图3显示了包括结合的主衬底和陶瓷磷光体层的半导体发光器件。
图4显示了在陶瓷磷光体层的掺杂曲线的一个实施例。
图5显示了包括多个陶瓷磷光体层的半导体发光器件。
图6显示了包括成形的陶瓷磷光体层的半导体发光器件。
图7显示了包括器件中陶瓷磷光体层比外延层宽的半导体发光器件。
图8显示了包括陶瓷磷光体层和散热结构的半导体发光器件。
具体实施方式
由于磷光体层易碎，因此上述具有薄膜或共形磷光体层的器件很难处理。根据本发明的实施方式，波长转换材料例如磷光体形成在陶瓷片中，这里称为“发光陶瓷”。通常地，陶瓷片是与半导体器件分离形成的自支撑层，然后贴附到完成后的半导体器件或用作半导体器件的生长衬底。陶瓷层可以是半透明或透明的，其可以降低与不透明的波长转换层例如共形层相关联的散射损失。发光陶瓷层比薄膜或共形磷光体层更结实。另外，由于发光陶瓷层是固体，因此它比较容易与附加的光学器件例如也是固体的透镜和二级光学器件形成光接触。
构成在发光陶瓷层中的磷光体的实例包括铝石榴石磷光体，其通常的分子式是(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb，其中0＜x＜1，0＜y＜1，0＜z≤0.1，0＜a≤0.2以及0＜b≤0.1，例如Lu3Al5O12:Ce3+和Y3Al5O12:Ce3+发出在黄绿色范围的光，和(Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:Euz 2+，其中0≤a＜5，0＜x≤1，0＜y≤1，0＜z≤1，例如Sr2Si5N8:Eu2+发出的光在红色范围。适当的Y3Al5O12:Ce3+陶瓷片可以从夏洛特市的Baikowski International Corporation，NC购买到。其它的发绿、黄和红光的磷光体也适用，包括(Sr1-a-bCabBac)SixNyOz:Eua 2+(a＝0.002-0.2，b＝0.0-0.25，c＝0.0-0.25，x＝1.5-2.5，y＝1.5-2.5，z＝1.5-2.5)，包括，例如SrSi2N2O2:Eu2+；(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4):Eu2+，包括，例如SrGa2S4:Eu2+；Sr1-xBaxSiO4:Eu2+；和(Ca1-xSrx)S:Eu2+；其中0＜x≤1，包括，例如CaS:Eu2+和SrS:Eu2+。
可以通过在高压下加热磷光体粉末直到磷光体颗粒的表面开始软化和熔化来形成发光陶瓷。部分熔化的颗粒粘接在一起形成坚硬的颗粒凝聚团。不同于光学上用作没有光学间断的单一、大磷光体颗粒的薄膜，发光陶瓷用作紧密包装的独立磷光体颗粒，以致于在不同的磷光体颗粒之间的界面处具有微小的光学间断。因此，发光陶瓷基本上在光学上是均匀质的，并且具有与形成发光陶瓷的磷光体材料相同的折射系数。不同于共形的磷光体层或沉积在透明材料如树脂中的磷光体层，发光陶瓷通常不需要除了磷光体本身之外的粘接材料(例如有机的树脂或环氧树脂)，以致于在各个磷光体颗粒之间存在微小空间和不同折射系数的材料。结果，发光陶瓷是透明或半透明的，不同于共形的磷光体层。
发光陶瓷层可以通过，例如，晶片键合，烧结，用已知的有机粘接剂例如环氧树脂或硅树脂薄层粘结，用高指数的无机粘接剂粘结，用溶胶凝胶玻璃粘接来贴附到发光器件。
高指数粘接剂的实例包括高指数光学玻璃，例如Schott玻璃SF59，Schott玻璃LaSF3，Schott玻璃LaSF N18，以及其混合物。这些玻璃可以从Duryea Pa的Schott Glass Technologies Incorporated获得。其他高指数粘接剂的实例包括高指数的硫属玻璃，例如(Ge，Sb，Ga)(S，Se)硫属玻璃，包括但不限于GaP，InGaP，GaAs，和GaN的III-V族半导体，包括但不限于ZnS，ZnSe，ZnTe，CdS，CdSe，和CdTe的II-VI半导体，包括但不限于Si和Ge的IV族半导体和化合物，有机半导体，和包括但不限于氧化钨、氧化钛、氧化镍，氧化锌、氧化铟锡以及氧化铬的金属氧化物，包括但不限于氟化镁、氟化钙的金属氟化物，包括但不限于Zn、In、Mg以及Sn的金属、钇铝石榴石(YAG)、磷系化合物、砷系化合物、锑系化合物、氮系化合物、高指数有机化合物以及它们的混合物或合金。在2000年9月12日申请的、申请号为09/660,317，和2001年6月12日申请的、申请号为09/880,204中详细描述了用高指数无机粘接剂粘接，以上两篇申请在此引入作为参考。
用溶胶凝胶玻璃粘接在US6642618中更详细地描述，这里将其引入作为参考。在用溶胶凝胶玻璃将发光陶瓷贴附到器件上的实施例中，为了使玻璃的系数与发光陶瓷和发光器件的系数能更接近地匹配，一种或多种材料例如钛、铈、铅、镓、铋、镉、锌、钡或铝的氧化物可以包含在SiO2溶胶凝胶玻璃中以提高玻璃的折射系数。例如，Y3Al5O12:Ce3+陶瓷层具有在大约1.75和1.8之间的折射系数，并被贴附到半导体发光器件的蓝宝石生长衬底，其中蓝宝石衬底具有大约为1.8的折射系数。希望使粘接剂的折射系数与Y3Al5O12:Ce3+陶瓷层和蓝宝石生长衬底的折射系数匹配。
在一些实施例中，发光陶瓷作为半导体发光器件的生长衬底。这一点在使用III族氮化物发光层例如InGaN时尤其合理，其可以生长在晶格失配的衬底(例如，蓝宝石或SiC)上，导致高位错密度，但依然在LED中显示出高的外量子效率。因此，半导体发光器件可以以同样的方式生长在发光陶瓷上。例如使用金属有机化学气相外延或者其他外延技术，典型地在低温条件(～550℃)将III族氮化物晶核层直接地沉积在发光陶瓷衬底上。然后，典型地在高温条件下，将较厚的GaN层(缓冲层)沉积在III族氮化物晶核层上并且结合到单晶膜中。增加缓冲层的厚度可以降低总的位错密度，并且提高该层的质量。最后，沉积n型和p型层，在它们之间包含了一个发光III族氮化物有源层。能经受住III族氮化物生长环境(例如高于1000℃的温度和NH3的环境)的能力决定了可选择发光陶瓷作为生长衬底。因为陶瓷是多晶体，并且所得的III族氮化物层是单晶，所以可以应用特别的额外生长因素。例如，对于上述情况，有必要在GaN缓冲层内插入多个低温中间层，从而“重构”GaN的生长，并且避免陶瓷晶向的影响传播到III族氮化物器件层。这些以及其它技术都是在晶格失配的衬底上生长的领域中的已知技术。适当的生长技术在，例如Goetz等人的美国专利US6630692中有描述，被转让给本发明的受让人，并在此引入作为参考。
虽然以下的实施例是参照III族氮化物发光二极管，可以理解的是，本发明的实施例可以延伸到其它发光器件，包括其它材料系统例如III-磷化物和III-砷化物的器件，以及其他结构例如共振腔LED，激光二极管，以及垂直腔表面发光激光器。
图2和3展示了包括发光陶瓷层的III-氮化物器件。在图2所示的器件中，一n型区42生长在合适的生长衬底40上，紧接着是有源区43和p型区44。生长衬底40可以是，例如，蓝宝石、SiC、GaN、或任意其它合适的生长衬底。每一个n型区42，有源区43，和p型区44可以包括不同的构成、厚度和掺杂浓度的多层。例如，n型区42和p型区44可以包括为欧姆接触而优化了的接触层和为容纳有源区43中载流子而优化了的覆盖层。有源区43可以包括单个发光层，或者可以包括被阻挡层分开的多个量子阱发光层。
如图2所示的器件中，p型区44和有源区43的一部分被蚀刻掉以暴露出n型区42的一部分。一p-接触45形成在p型区44的剩余部分上，并且一n-接触46形成在n-接触46的暴露部分上。在如图2所示的实施例中，接触45和46是能反射光的，以致于从器件提取的光可以穿过衬底40的背面。可选地，接触45和46可以是透明的，或者以p型区44和n型区42的大部分表面不被接触覆盖的方式形成。在这样的器件中，从器件提取的光可以穿过外延结构的表面，接触45和46形成于该表面上。
如图3所示的器件中，外延层通过p-接触45结合到主衬底49上。在p型区44和主衬底49之间可以包括易于结合的附加层(未示出)。在外延层结合到主衬底49上之后，生长衬底被除去以暴露出n型区42的一个表面。通过主衬底49提供了与有源区的p侧的接触。一n型接触46形成在n型区42的暴露表面的一部分上。从器件提取穿过n型区42的顶表面的光。在2004年3月19日提交的、申请号No.10/804,810、标题为“Photonic Crystal Light EmittingDevice”的系列申请中有更详细地描述了生长衬底的去除，该申请被转让给本发明的受让人，并在此引入作为参考。
如图2和3所示的器件中，一发光陶瓷层50例如前文所描述的陶瓷层被贴附到器件发出光的表面；图2中衬底40的背面和图3中n型区42的的顶部。陶瓷层50可以形成或贴附在器件发出光的任意表面上。例如，陶瓷层50可以延伸到如图2所示器件的侧面上。图3中示出了可选的过滤器30，其允许来自有源区43的光通过进入陶瓷层50中，但是反射由陶瓷层50发出的光，以使得陶瓷层50发出的光被阻止进入器件52，在这里可能被吸收或被损耗。适合的过滤器的例子包括来自列支敦士登的Unaxis Balzers Ltd公司或者加利福尼亚的圣罗莎的Optical Coating Laboratory Inc.公司的双色性过滤器。
发光陶瓷层50可以包括单一的磷光体或混合在一起的多个磷光体。在一些实施例中，激活的掺杂剂的数量在陶瓷层是梯度分布的。图4显示了在发光陶瓷层中梯度的掺杂曲线的一个例子。图4中的虚线表示器件的表面。在最靠近器件表面的陶瓷层的部分中的磷光体具有最高的掺杂剂浓度。随着与器件表面距离的增大，在磷光体中的掺杂剂浓度下降。尽管图4显示了恒定掺杂剂浓度区域的线性的掺杂剂曲线，但可以理解的是，该梯度曲线可以采用任意的形状，包括，例如，阶梯状分布曲线或幂曲线，并且可以包括多个或者没有恒定掺杂剂浓度区。另外，在一些实施例中，颠倒梯度曲线是有利的，以最接近器件表面的区域具有小的掺杂剂浓度，掺杂剂浓度随着与器件表面距离的增大而增加。在一些实施列中，最远离器件表面的陶瓷层的部分可能不含有任何磷光体或者任何掺杂剂，并且为光提取被成形(如下所示)。
在一些实施例中，器件包括多个陶瓷层，如图5中所示的器件。陶瓷层50a贴附到器件52，其可以是，例如图2和3中所示的器件。陶瓷层50b贴附到陶瓷层50a。在一些实施例中，两层陶瓷层50a和50b中的一层包含用于器件的所有波长转换材料，并且两层陶瓷层中的另一个是透明的并如果该陶瓷层是相邻于器件52，则用来作为间隔层，或者如果是最远离器件52的陶瓷层，则用作光提取层。在一些实施例中，陶瓷层50a和50b的每一个含有一个不同的磷光体或多个磷光体。虽然图5中示出了两层陶瓷层，但可以理解的是，包括两个以上的陶瓷层和/或两个以上的磷光体的器件在本发明的范围之内。选择在陶瓷层50a和50b中的不同的磷光体的配置，或者陶瓷层50a和50b自身的配置来控制器件中多个磷光体之间的相互作用，如在2004年2月23日申请系列号No.10/785,616中描述的，此处将其引入作为参考。虽然图5中示出的陶瓷层50a和50b堆叠在器件52上，在本发明的范围之内也可能有其他设置。在一些实施例中，包括一个或多个陶瓷层的一个器件结合有其他波长转换层，例如如图1所示的波长转换材料，或者是在背景技术部分描述的薄膜，共形层以及发光衬底。在没有激活的掺杂剂的情况下，不发光的透明陶瓷层可以是例如与发光陶瓷层相同的主材料。
发光陶瓷层的一个优点是，例如，为增加的光提取，具有通过模铸、研磨、机械加工、热压印或者抛光将陶瓷层形成所需要形状的能力。发光陶瓷层通常具有高折射系数，例如Y3Al5O12:Ce3+陶瓷层是1.75到1.8。为了避免在高系数的陶瓷层和低系数的空气之间的界面出现全内反射，陶瓷层可做成如图6和7所示的形状。在图6所示的器件中，发光陶瓷层54做成例如一个半圆状透镜的透镜形状。通过纹理化陶瓷层顶部，或者任意地或者按照例如菲涅耳透镜的形状，进一步提高从器件的光提取，如图7所示。在一些实施列中陶瓷层的顶部被纹理化成具有光子晶体结构，例如形成在陶瓷中的孔的周期点阵。成形的陶瓷层的尺寸可以比其所附着的器件52的那个面小或是相等，或者比其所附着的器件52的那个面大。如图6和7所示。在图7所示的器件中，成形的陶瓷层的底部长度是陶瓷层被安装在的器件52的那个面的长度的至少二倍，这可以期望能对光提取有利。在一些实施例中，波长转换材料被限制在陶瓷层中最靠近器件52的那部分。在另一些实施例中，如图7所示，波长转换材料被提供在第一陶瓷层50a中，然后贴附到第二成形的透明陶瓷层50b。
在一些实施例中，顶部陶瓷层的表面被粗糙化以提高为混合光所必要的散射，例如，在来自发光器件和一个或更多波长转换层的光混合以构成白光的器件中。在另一些实施例中，充分的混合是通过二级光学器件完成的，例如本领域中公知的透镜或光导。
发光陶瓷层进一步的优点是对陶瓷的热特性起促进作用。图8中示出了包括发光陶瓷层和散热结构的一个器件。和图7一样，图8包括一个为了光提取而成形的透明或发光陶瓷层50b。一个可选的附加透明或发光陶瓷层50a沉积在层50b和器件52之间。器件52装配在子安装件(submount)58上，例如如图2所示的倒装芯片。子安装件58和图3中的主衬底49可以是例如金属，如Cu箔、Mo、Cu/Mo以及Cu/W；具有金属接触的半导体，例如具有欧姆接触的Si和具有欧姆接触的GaAs包括了例如Pd、Ge、Ti、Au、Ni、Ag中的一种或多种；和陶瓷，例如是压缩的金刚石。层56是将陶瓷层50b连接到子安装件58的热传导材料，潜在地减小了发光陶瓷层50a和/或50b的温度，从而提高了光输出。作为层56的适当的材料包括上述的子安装件材料。图8中显示的设置对使用导热衬底从倒装芯片器件中散热是特别有用的，例如SiC。
下面给出一个使用铈掺杂的钇铝石榴石陶瓷片扩散结合到蓝宝石衬底上的实施例。
扩散结合的YAG-蓝宝石组分是有益的，因为它们的高机械强度和优秀的光学性质。根据成分是Al2O3和3Y2O35Al2O3的钇-铝的相图，除了具有33％Al的共晶之外，没有其他相存在。因此，烧结结合而成的YAG-蓝宝石复合物在YAG陶瓷(ni＝1.84)和蓝宝石衬底(ni＝1.76)之间的(共晶)界面处具有平均的折射系数，并且因此可得到一高质量的光学接触。另外，由于YAG和蓝宝石相同的扩散系数(YAG：6.9×10-6K-1，Al2O3：8.6×10-6K-1)，可生产出具有低机械应力的烧结结合的晶片。
扩散结合的YAG:Ce陶瓷-蓝宝石晶片可以按照以下步骤构成：
a)制造YAG:Ce陶瓷：40g的Y2O3(99.998％)，32g的Al2O3(99.999％)，以及3.44g的CeO2和1.5kg的高纯度铝球(直径2mm)在异丙醇中于辊台上研磨12小时。然后该干燥的前体粉末放入CO气氛中在1300℃煅烧2小时。然后将所得到的YAG粉末在乙醇中通过行星球磨(玛瑙球)被去除聚结块。该陶瓷浆料被流延成型以便在其干燥后得到陶瓷生坯。然后生坯在石墨板之间在1700℃下烧结2小时。
b)蓝宝石晶片与YAG:Ce陶瓷的扩散结合：被研磨和抛光的蓝宝石和YAG晶片在单轴的热压设备(HUP)中扩散结合。为了这个目的，蓝宝石和YAG晶片在钨箔(厚度为0.5mm)之间堆叠，并放入以石墨压模中。为提高加工速度，多个蓝宝石/YAG:Ce陶瓷/钨箔的叠层可以被同时堆叠和加工。
HUP装置被抽真空以后，在不加外部压力条件下，温度首先在4个小时内上升到1700℃。然后施加300巴的单向压力并保持恒定2小时。在该停留时间之后，温度在2小时内降低到1300℃并且保持压力恒定。最后在压力释放后，系统在6个小时内冷却到室温。
c)烧结结合的蓝宝石-YAG:Ce晶片的后工序：在研磨和抛光该烧结结合晶片的表面之后，样品在1300℃下(加热速度：300K/小时)在大气中退火2小时，然后在12小时内冷却到时室温。
本发明描述了已有的细节，本领域技术人员都意识到，根据当前的公开，可以作出不脱离本发明中所描述的精神的改进。因此，本发明并不企图将本发明的范围局限于具体的所描述和所示出的实施例。

Claims (24)

1、一种结构，包括：包括设置在n型区域和p型区域之间的发光层的半导体发光器件，设置在发光层发出的光的路径上的第一陶瓷层，该第一陶瓷层包括波长转换材料。
2、如权利要求1所述的结构，其中第一陶瓷层包括磷光体颗粒的刚性凝聚团。
3、如权利要求2所述的结构，其中第一陶瓷层实质上不需要粘合剂材料。
4、如权利要求2所述的结构，其中通过在高于大气压的压强下加热磷光体粉末颗粒直到磷光体颗粒的表面开始软化并且磷光体颗粒粘接在一起，来形成第一陶瓷层。
5、如权利要求1所述的结构，进一步包含已设置在该第一陶瓷层和该半导体发光器件之间的粘接层。
6、如权利要求5所述的结构，其中该粘接层是有机粘接材料、环氧树脂、硅树脂，无机粘接材料，和溶胶凝胶玻璃之一。
7、如权利要求5所述的结构，其中该粘接层包括Schott玻璃SF59，Schott玻璃LaSF3，Schott玻璃LaSF N18，硫属玻璃，(Ge，Sb，Ga)(S，Se)硫属玻璃，III-V族半导体，GaP，InGaP，GaAs，GaN，II-VI半导体，ZnS，ZnSe，ZnTe，CdS，CdSe，CdTe，IV族半导体，Si，Ge，有机半导体，金属氧化物，氧化钨、氧化钛、氧化镍，氧化锌、氧化铟锡以及氧化铬，金属氟化物，氟化镁、氟化钙，金属，Zn、In、Mg以及Sn、钇铝石榴石、磷系化合物、砷系化合物、锑系化合物、氮系化合物、高指数有机物化合物中的一种。
8、如权利要求5所述的结构，其中第一陶瓷层实质上是不需要粘接材料的。
9、如权利要求1所述的结构，进一步包括在该半导体发光器件与该第一陶瓷层之间的界面，该界面是通过在高于室温的温度和高于大气压的压力条件下，将该半导体发光器件与该第一陶瓷层压在一起而形成的。
10、如权利要求1所述的结构，其中第一陶瓷层的表面包括透镜。
11、如权利要求1所述的结构，其中第一陶瓷层的表面包括半圆形。
12、如权利要求1所述的结构，其中第一陶瓷层的表面包括菲涅耳透镜。
13、如权利要求1所述的结构，其中第一陶瓷层的表面包括光子晶体结构。
14、如权利要求1所述的结构，其中第一陶瓷层的表面被纹理化。
15、如权利要求1所述的结构，其中第一陶瓷层包括具有掺杂剂的磷光体，其中掺杂剂的浓度是梯度分布的。
16、如权利要求15所述的结构，其中浓度的梯度分布是从该第一陶瓷层的第一部分中的第一浓度到该第一陶瓷层的第二部分中的第二浓度；第一浓度高于第二浓度；和该第一部分比该第二部分更靠近半导体发光器件。
17、如权利要求1所述的结构，其中该半导体发光器件包括一个生长衬底，并且该第一陶瓷层贴附在该生长衬底上。
18、如权利要求1所述的结构，其中该半导体发光器件包括一个主体衬底，并且该第一陶瓷层贴附在与该主体衬底相对的该半导体发光器件的表面上。
19、如权利要求1所述的结构，进一步包括设置在发光层发出的光的路径上的第二陶瓷层。
20、如权利要求19所述的结构，其中该第一陶瓷层包括第一波长转换材料；和该第二陶瓷层包括第二波长转换材料。
21、如权利要求19所述的结构，其中该第一陶瓷层包括波长转换材料；和该第二陶瓷层不包括波长转换材料。
22、如权利要求19所述的结构，其中第一和第二陶瓷层的其中一个的表面的表面积大于发出光的半导体发光器件的表面的表面积。
23、如权利要求1所述的结构，其中波长转换材料包括(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb，其中0＜x＜1，0＜y＜1，0≤z≤0.1，0＜a≤0.2以及0＜b≤0.1；Lu3Al5O12:Ce3+；以及Y3Al5O12:Ce3+中的一种。
24、如权利要求1所述的结构，进一步包括设置在该第一陶瓷层和该半导体发光器件之间的双色性过滤器。
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