JP5920686B2 - コリメート発光装置及び方法 - Google Patents
コリメート発光装置及び方法 Download PDFInfo
- Publication number
- JP5920686B2 JP5920686B2 JP2010533700A JP2010533700A JP5920686B2 JP 5920686 B2 JP5920686 B2 JP 5920686B2 JP 2010533700 A JP2010533700 A JP 2010533700A JP 2010533700 A JP2010533700 A JP 2010533700A JP 5920686 B2 JP5920686 B2 JP 5920686B2
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- JP
- Japan
- Prior art keywords
- light
- collimator
- emitting device
- substrate
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000007787 solid Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000003993 interaction Effects 0.000 description 3
- -1 Yttrium Aluminum Silicon Chemical compound 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/04—Optical design
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Description
知られている発光装置の欠点は、光源によって発される特定の光線が、コリメータ(から反射される等の)との相互作用なしに装置を出ることである。このことは、かなり大きなビーム発散を生じさせ、したがって、低い焦点効率を生じさせることになる。コリメータ(の長さ)を拡大することは、この課題を解決するための典型的な解決法を形成する。しかし、このことは、小さい容積及び出口直径という市場要求とは明らかに矛盾する。
Claims (6)
- 光源であって、
光を発することが可能である半導体装置、
前記半導体装置に隣接する底部表面及び対向する上部表面を有する基体、及び
前記上部表面に隣接して位置される反射器、
を含む光源と、
前記光をコリメートする、反射鏡であるコリメータと、
を有する発光装置において、
前記反射器が、前記基体の前記底部表面よりも大きい表面を有し、
前記反射器が、前記光源からの光が前記コリメータによって反射されることなく前記発光装置から出射されないような寸法を少なくとも有して前記基体の底部表面を超えて外側へ延在する、
ことを特徴とする、発光装置。 - 請求項1に記載の発光装置であって、前記基体は、少なくとも一部が前記底部表面に対して傾斜角にある側面表面を有する、発光装置。
- 請求項2に記載の発光装置であって、前記傾斜角が90°より小さい、発光装置。
- 請求項1乃至3の何れか一項に記載の発光装置であって、前記基体は、波長変換材料を含む、発光装置。
- 請求項4に記載の発光装置であって、前記基体は、セラミック基体である、発光装置。
- 請求項1乃至5の何れか一項に記載の発光装置であって、当該装置が、少なくとも1つの第2の光源を有する、発光装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07121092 | 2007-11-20 | ||
EP07121092.6 | 2007-11-20 | ||
PCT/IB2008/054759 WO2009066209A1 (en) | 2007-11-20 | 2008-11-13 | Collimating light emitting apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011503892A JP2011503892A (ja) | 2011-01-27 |
JP5920686B2 true JP5920686B2 (ja) | 2016-05-18 |
Family
ID=40474833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010533700A Active JP5920686B2 (ja) | 2007-11-20 | 2008-11-13 | コリメート発光装置及び方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8258532B2 (ja) |
EP (1) | EP2212930B1 (ja) |
JP (1) | JP5920686B2 (ja) |
KR (1) | KR20100099183A (ja) |
CN (1) | CN101868864B (ja) |
TW (1) | TW200940901A (ja) |
WO (1) | WO2009066209A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190000396A (ko) | 2010-09-29 | 2019-01-02 | 루미리즈 홀딩 비.브이. | 파장 변환된 발광 장치 |
CA2822911C (en) * | 2011-01-03 | 2018-07-10 | Fundacio Institut De Recerca De L'energia De Catalunya | Optoelectronic device, system and method for obtaining an ambient light spectrum and modifying an emitted light |
US9788731B2 (en) * | 2011-02-21 | 2017-10-17 | Jaywant Philip Parmar | Optical endoluminal far-field microscopic imaging catheter |
KR20140132548A (ko) * | 2013-05-08 | 2014-11-18 | 주식회사 케이엠더블유 | 스탠드형 엘이디 조명장치 |
JP6544513B2 (ja) | 2014-11-19 | 2019-07-17 | 三菱ケミカル株式会社 | スポット照明装置 |
US20190259923A1 (en) * | 2018-02-22 | 2019-08-22 | Epistar Corporation | Light-emitting device |
DE102018116327A1 (de) * | 2018-07-05 | 2020-01-09 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauteil und Verfahren zur Herstellung eines strahlungsemittierenden Bauteils |
TWI689174B (zh) * | 2018-12-12 | 2020-03-21 | 財團法人工業技術研究院 | 光通訊系統 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6607286B2 (en) * | 2001-05-04 | 2003-08-19 | Lumileds Lighting, U.S., Llc | Lens and lens cap with sawtooth portion for light emitting diode |
US6851834B2 (en) * | 2001-12-21 | 2005-02-08 | Joseph A. Leysath | Light emitting diode lamp having parabolic reflector and diffuser |
JP2004055168A (ja) * | 2002-07-16 | 2004-02-19 | Ichikoh Ind Ltd | Ledランプモジュール |
US7091653B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US7009213B2 (en) * | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
WO2005107420A2 (en) | 2004-05-05 | 2005-11-17 | Rensselaer Polytechnic Institute | High efficiency light source using solid-state emitter and down-conversion material |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US7118262B2 (en) * | 2004-07-23 | 2006-10-10 | Cree, Inc. | Reflective optical elements for semiconductor light emitting devices |
US8541795B2 (en) * | 2004-10-12 | 2013-09-24 | Cree, Inc. | Side-emitting optical coupling device |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
JP4870950B2 (ja) * | 2005-08-09 | 2012-02-08 | 株式会社光波 | 光放射用光源ユニット及びそれを用いた面状発光装置 |
US7293908B2 (en) * | 2005-10-18 | 2007-11-13 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
US7378686B2 (en) * | 2005-10-18 | 2008-05-27 | Goldeneye, Inc. | Light emitting diode and side emitting lens |
KR101396588B1 (ko) * | 2007-03-19 | 2014-05-20 | 서울반도체 주식회사 | 다양한 색온도를 갖는 발광 장치 |
US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
-
2008
- 2008-11-13 JP JP2010533700A patent/JP5920686B2/ja active Active
- 2008-11-13 CN CN200880116852XA patent/CN101868864B/zh active Active
- 2008-11-13 EP EP08851952.5A patent/EP2212930B1/en active Active
- 2008-11-13 US US12/742,957 patent/US8258532B2/en active Active
- 2008-11-13 KR KR1020107013450A patent/KR20100099183A/ko active IP Right Grant
- 2008-11-13 WO PCT/IB2008/054759 patent/WO2009066209A1/en active Application Filing
- 2008-11-17 TW TW097144410A patent/TW200940901A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2009066209A1 (en) | 2009-05-28 |
CN101868864B (zh) | 2012-10-03 |
CN101868864A (zh) | 2010-10-20 |
JP2011503892A (ja) | 2011-01-27 |
TW200940901A (en) | 2009-10-01 |
EP2212930A1 (en) | 2010-08-04 |
US20100289039A1 (en) | 2010-11-18 |
EP2212930B1 (en) | 2018-02-21 |
KR20100099183A (ko) | 2010-09-10 |
US8258532B2 (en) | 2012-09-04 |
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