CN101868864B - 校准发光装置 - Google Patents
校准发光装置 Download PDFInfo
- Publication number
- CN101868864B CN101868864B CN200880116852XA CN200880116852A CN101868864B CN 101868864 B CN101868864 B CN 101868864B CN 200880116852X A CN200880116852X A CN 200880116852XA CN 200880116852 A CN200880116852 A CN 200880116852A CN 101868864 B CN101868864 B CN 101868864B
- Authority
- CN
- China
- Prior art keywords
- light
- calibrator
- light source
- reflector
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 8
- 230000009466 transformation Effects 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 244000188472 Ilex paraguariensis Species 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 206010003084 Areflexia Diseases 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/04—Optical design
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07121092 | 2007-11-20 | ||
EP07121092.6 | 2007-11-20 | ||
PCT/IB2008/054759 WO2009066209A1 (en) | 2007-11-20 | 2008-11-13 | Collimating light emitting apparatus and method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101868864A CN101868864A (zh) | 2010-10-20 |
CN101868864B true CN101868864B (zh) | 2012-10-03 |
Family
ID=40474833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880116852XA Active CN101868864B (zh) | 2007-11-20 | 2008-11-13 | 校准发光装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8258532B2 (zh) |
EP (1) | EP2212930B1 (zh) |
JP (1) | JP5920686B2 (zh) |
KR (1) | KR20100099183A (zh) |
CN (1) | CN101868864B (zh) |
TW (1) | TW200940901A (zh) |
WO (1) | WO2009066209A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013539229A (ja) | 2010-09-29 | 2013-10-17 | コーニンクレッカ フィリップス エヌ ヴェ | 波長変換型発光デバイス |
PL2604094T3 (pl) * | 2011-01-03 | 2015-02-27 | Fundacio Inst De Recerca De Lenergia De Catalunya | Urządzenie optoelektroniczne, system i sposób do otrzymywania widma światła otoczenia i modyfikowania emitowanego światła |
US9788731B2 (en) * | 2011-02-21 | 2017-10-17 | Jaywant Philip Parmar | Optical endoluminal far-field microscopic imaging catheter |
KR20140132548A (ko) * | 2013-05-08 | 2014-11-18 | 주식회사 케이엠더블유 | 스탠드형 엘이디 조명장치 |
JP6544513B2 (ja) | 2014-11-19 | 2019-07-17 | 三菱ケミカル株式会社 | スポット照明装置 |
US20190259923A1 (en) * | 2018-02-22 | 2019-08-22 | Epistar Corporation | Light-emitting device |
DE102018116327A1 (de) * | 2018-07-05 | 2020-01-09 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauteil und Verfahren zur Herstellung eines strahlungsemittierenden Bauteils |
TWI689174B (zh) * | 2018-12-12 | 2020-03-21 | 財團法人工業技術研究院 | 光通訊系統 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6607286B2 (en) * | 2001-05-04 | 2003-08-19 | Lumileds Lighting, U.S., Llc | Lens and lens cap with sawtooth portion for light emitting diode |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6851834B2 (en) * | 2001-12-21 | 2005-02-08 | Joseph A. Leysath | Light emitting diode lamp having parabolic reflector and diffuser |
JP2004055168A (ja) * | 2002-07-16 | 2004-02-19 | Ichikoh Ind Ltd | Ledランプモジュール |
US7091653B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
US7009213B2 (en) * | 2003-07-31 | 2006-03-07 | Lumileds Lighting U.S., Llc | Light emitting devices with improved light extraction efficiency |
KR101256919B1 (ko) * | 2004-05-05 | 2013-04-25 | 렌슬러 폴리테크닉 인스티튜트 | 고체-상태 에미터 및 하향-변환 재료를 이용한 고효율 광소스 |
US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US7118262B2 (en) * | 2004-07-23 | 2006-10-10 | Cree, Inc. | Reflective optical elements for semiconductor light emitting devices |
US8541795B2 (en) * | 2004-10-12 | 2013-09-24 | Cree, Inc. | Side-emitting optical coupling device |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
JP4870950B2 (ja) * | 2005-08-09 | 2012-02-08 | 株式会社光波 | 光放射用光源ユニット及びそれを用いた面状発光装置 |
US7293908B2 (en) * | 2005-10-18 | 2007-11-13 | Goldeneye, Inc. | Side emitting illumination systems incorporating light emitting diodes |
US7378686B2 (en) * | 2005-10-18 | 2008-05-27 | Goldeneye, Inc. | Light emitting diode and side emitting lens |
KR101396588B1 (ko) * | 2007-03-19 | 2014-05-20 | 서울반도체 주식회사 | 다양한 색온도를 갖는 발광 장치 |
US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
-
2008
- 2008-11-13 WO PCT/IB2008/054759 patent/WO2009066209A1/en active Application Filing
- 2008-11-13 CN CN200880116852XA patent/CN101868864B/zh active Active
- 2008-11-13 US US12/742,957 patent/US8258532B2/en active Active
- 2008-11-13 EP EP08851952.5A patent/EP2212930B1/en active Active
- 2008-11-13 KR KR1020107013450A patent/KR20100099183A/ko active IP Right Grant
- 2008-11-13 JP JP2010533700A patent/JP5920686B2/ja active Active
- 2008-11-17 TW TW097144410A patent/TW200940901A/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6607286B2 (en) * | 2001-05-04 | 2003-08-19 | Lumileds Lighting, U.S., Llc | Lens and lens cap with sawtooth portion for light emitting diode |
Also Published As
Publication number | Publication date |
---|---|
TW200940901A (en) | 2009-10-01 |
WO2009066209A1 (en) | 2009-05-28 |
US8258532B2 (en) | 2012-09-04 |
JP2011503892A (ja) | 2011-01-27 |
US20100289039A1 (en) | 2010-11-18 |
EP2212930B1 (en) | 2018-02-21 |
EP2212930A1 (en) | 2010-08-04 |
KR20100099183A (ko) | 2010-09-10 |
JP5920686B2 (ja) | 2016-05-18 |
CN101868864A (zh) | 2010-10-20 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: The city of Eindhoven in Holland Patentee after: KONINKLIJKE PHILIPS N.V. Address before: The city of Eindhoven in Holland Patentee before: Koninklijke Philips Electronics N.V. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170315 Address after: The city of Eindhoven in Holland Patentee after: PHILIPS LIGHTING HOLDING B.V. Address before: The city of Eindhoven in Holland Patentee before: KONINKLIJKE PHILIPS N.V. |
|
TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: Eindhoven Patentee after: Signify Holdings Ltd. Address before: The city of Eindhoven in Holland Patentee before: PHILIPS LIGHTING HOLDING B.V. |
|
CP03 | Change of name, title or address |