JP2009540558A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2009540558A JP2009540558A JP2009513823A JP2009513823A JP2009540558A JP 2009540558 A JP2009540558 A JP 2009540558A JP 2009513823 A JP2009513823 A JP 2009513823A JP 2009513823 A JP2009513823 A JP 2009513823A JP 2009540558 A JP2009540558 A JP 2009540558A
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- light
- emitting device
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- layer
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- 239000002245 particle Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 31
- 230000005855 radiation Effects 0.000 claims abstract description 23
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 31
- 230000003287 optical effect Effects 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000008393 encapsulating agent Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
例:
1グラムのSiO2が被膜されたTiO2ナノ粒子が、5グラムのシリコーンジェルと混合される。少量の前記材料が、供給(dispensing)を用いてLEDへ塗布される。LUMIRAMICプレートレットが、ピックアンドプレース装置を用いて前記供給へ配置される。シリコーンジェルの硬化の後に、半球体がダイの上に配置され、(クリアな)カプセル材料で充填される。光学接着剤(すなわち、シリコーンジェルにおけるSiO2が被膜されたTiO2ナノ粒子)の厚さは、ピックアンドプレース装置によって制御され得る。過量の材料は、ダイから流れ出得、LUMIRAMICプレートの下の空間を充填する(量は、供給される量によって制御される)。
Claims (12)
- 発光装置であって、
−放射源と、
−発光物質を含む無機層と、
−散乱粒子を含む散乱層と、
を有し、前記散乱層が前記放射源及び前記無機層の間に位置される、発光装置において、前記無機層がセラミック材料から構成されることを特徴とする、発光装置。 - 請求項1に記載の発光装置であって、前記散乱粒子が、SiO2で被膜されたTiO2粒子である、発光装置。
- 請求項1又は2に記載の発光装置であって、前記散乱層が、シリコーン材料を含む、発光装置。
- 請求項1ないし3のいずれか一項に記載の発光装置であって、前記セラミック材料が透明である、発光装置。
- 請求項1ないし4のいずれか一項に記載の発光装置であって、前記セラミック材料が半透明である、発光装置。
- 請求項5に記載の発光装置であって、ミー散乱により半透明である、発光装置。
- 請求項1ないし6のいずれか一項に記載の発光装置であって、前記セラミック材料がプレートレットの形態である、発光装置。
- 請求項1ないし7のいずれか一項に記載の発光装置であって、前記放射源が、青色光を放射するLEDである、発光装置。
- 請求項1ないし8のいずれか一項に記載の発光装置であって、前記発光物質が黄色光を放射する蛍光体である、発光装置。
- 請求項9に記載の発光装置であって、前記蛍光体が、セリウムがドープされたイットリウム・アルミニウム・ガーネット、又はマンガンがドープされた硫化亜鉛である、発光装置。
- 請求項1ないし10のいずれか一項に記載の発光装置であって、前記散乱層が前記無機層を前記放射源に結合させる、発光装置。
- 請求項1ないし11のいずれか一項に記載の発光装置を含む表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06115111 | 2006-06-08 | ||
PCT/IB2007/052089 WO2008007232A2 (en) | 2006-06-08 | 2007-06-04 | Light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2009540558A true JP2009540558A (ja) | 2009-11-19 |
Family
ID=38923607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513823A Pending JP2009540558A (ja) | 2006-06-08 | 2007-06-04 | 発光装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090256167A1 (ja) |
EP (1) | EP2030258A2 (ja) |
JP (1) | JP2009540558A (ja) |
KR (1) | KR20090017696A (ja) |
CN (1) | CN101467266A (ja) |
TW (1) | TWI516165B (ja) |
WO (1) | WO2008007232A2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011501464A (ja) * | 2007-10-24 | 2011-01-06 | テオス・インコーポレイテッド | Led光源用拡散器 |
WO2011096074A1 (ja) * | 2010-02-08 | 2011-08-11 | コニカミノルタオプト株式会社 | 発光装置 |
WO2012008692A2 (en) * | 2010-07-14 | 2012-01-19 | Lg Innotek Co., Ltd. | Display device |
WO2014103330A1 (ja) | 2012-12-27 | 2014-07-03 | コニカミノルタ株式会社 | 蛍光体分散液、led装置およびその製造方法 |
JP2016521463A (ja) * | 2013-05-15 | 2016-07-21 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 基板内に散乱機構を有するled |
Families Citing this family (37)
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CN101484964A (zh) | 2006-05-02 | 2009-07-15 | 舒伯布尔斯公司 | 用于发光二极管及其构成的灯泡分散光并优先散射某些波长的光的方法 |
BRPI0711150A2 (pt) | 2006-05-02 | 2011-08-23 | Superbulbs Inc | bulbo de led de plástico |
US7521862B2 (en) * | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
CN101953230B (zh) * | 2008-02-21 | 2013-03-27 | 日东电工株式会社 | 具有半透明陶瓷板的发光装置 |
US9650259B2 (en) | 2008-05-02 | 2017-05-16 | Arcelik Anonim Sirketi | Photocatalytic nanocomposite material |
WO2009158159A2 (en) * | 2008-06-26 | 2009-12-30 | 3M Innovative Properties Company | Light converting construction |
JP2010024278A (ja) * | 2008-07-16 | 2010-02-04 | Stanley Electric Co Ltd | 蛍光体セラミック板およびそれを用いた発光素子 |
US8471445B2 (en) * | 2008-08-18 | 2013-06-25 | Switch Bulb Company, Inc. | Anti-reflective coatings for light bulbs |
DE102009005907A1 (de) | 2009-01-23 | 2010-07-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
KR101562022B1 (ko) * | 2009-02-02 | 2015-10-21 | 삼성디스플레이 주식회사 | 발광 다이오드 유닛, 이를 포함하는 표시 장치 및 발광 다이오드 유닛 제조 방법 |
JP5624118B2 (ja) * | 2009-04-09 | 2014-11-12 | コーニンクレッカ フィリップス エヌ ヴェ | レーザーの用途のためのランプ |
WO2010134011A2 (en) * | 2009-05-19 | 2010-11-25 | Koninklijke Philips Electronics N.V. | Light scattering and conversion plate for leds |
JP5887280B2 (ja) * | 2010-02-03 | 2016-03-16 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 蛍光体変換led |
CN102823000B (zh) | 2010-04-08 | 2016-08-03 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
EP2378575A1 (de) * | 2010-04-19 | 2011-10-19 | EMPA Eidgenössische Materialprüfungs- und Forschungsanstalt | Optisches Element, insbesondere zur Veränderung des von einer LED- Lichtquelle emittierten Lichts, und Verfahren zu dessen Herstellung |
JP4717148B1 (ja) * | 2010-05-28 | 2011-07-06 | 株式会社スズデン | 照明器具および照明器具の製造方法 |
DE102010034923A1 (de) * | 2010-08-20 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht |
TWI443390B (zh) | 2010-12-29 | 2014-07-01 | Ind Tech Res Inst | 寬波域膽固醇液晶薄膜、其製法、包含其之偏光元件、及包含其之高光效率液晶顯示器 |
DE102011078689A1 (de) * | 2011-07-05 | 2013-01-10 | Osram Ag | Verfahren zur Herstellung eines Konversionselements und Konversionselement |
EP2859593A1 (de) * | 2012-06-11 | 2015-04-15 | Potemkin, Alexander | Optische anpassungsvorrichtung für leuchtdiode |
US20170025589A1 (en) * | 2015-07-22 | 2017-01-26 | Epistar Corporation | Light emitting structure and method for manufacturing the same |
US10186645B2 (en) * | 2016-09-01 | 2019-01-22 | Lumileds Llc | White-appearing semiconductor light-emitting devices having a temperature sensitive low-index particle layer |
US11081628B2 (en) | 2016-09-01 | 2021-08-03 | Lumileds Llc | White-appearing semiconductor light-emitting devices having a temperature sensitive low-index particle layer |
CN106377075A (zh) * | 2016-11-15 | 2017-02-08 | 成都信息工程大学 | 各向同性阅读照明方法及系统 |
CN206946178U (zh) * | 2017-06-29 | 2018-01-30 | 深圳市光峰光电技术有限公司 | 波长转换装置及光源系统 |
CN110094647A (zh) * | 2018-01-29 | 2019-08-06 | 深圳市绎立锐光科技开发有限公司 | 一种波长转换装置、发光组件及照明装置 |
US11862758B2 (en) * | 2018-11-28 | 2024-01-02 | Lawrence Livermore National Security, Llc | Systems and methods for fluoride ceramic phosphors for LED lighting |
CN110016334B (zh) * | 2019-04-28 | 2022-06-10 | 电子科技大学 | 一种利用前向散射增强型量子点荧光粉提高pc-LEDs出光效率的方法 |
EP3980509B1 (en) * | 2019-06-05 | 2023-02-22 | Lumileds LLC | Bonding of phosphor converter emitters |
EP3991209A1 (en) | 2019-06-25 | 2022-05-04 | Lumileds LLC | Phosphor layer for micro-led applications |
US11362243B2 (en) | 2019-10-09 | 2022-06-14 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
US11177420B2 (en) | 2019-10-09 | 2021-11-16 | Lumileds Llc | Optical coupling layer to improve output flux in LEDs |
USD933881S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture having heat sink |
USD933872S1 (en) | 2020-03-16 | 2021-10-19 | Hgci, Inc. | Light fixture |
US11032976B1 (en) | 2020-03-16 | 2021-06-15 | Hgci, Inc. | Light fixture for indoor grow application and components thereof |
US11411146B2 (en) | 2020-10-08 | 2022-08-09 | Lumileds Llc | Protection layer for a light emitting diode |
WO2024008103A1 (zh) * | 2022-07-08 | 2024-01-11 | 深圳市绎立锐光科技开发有限公司 | 一种激光合光装置以及光源 |
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2007
- 2007-06-04 EP EP07825790A patent/EP2030258A2/en not_active Withdrawn
- 2007-06-04 US US12/301,698 patent/US20090256167A1/en not_active Abandoned
- 2007-06-04 WO PCT/IB2007/052089 patent/WO2008007232A2/en active Application Filing
- 2007-06-04 CN CNA2007800212588A patent/CN101467266A/zh active Pending
- 2007-06-04 KR KR1020097000364A patent/KR20090017696A/ko active Search and Examination
- 2007-06-04 JP JP2009513823A patent/JP2009540558A/ja active Pending
- 2007-06-05 TW TW096120249A patent/TWI516165B/zh not_active IP Right Cessation
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JP2003324215A (ja) * | 2002-04-30 | 2003-11-14 | Toyoda Gosei Co Ltd | 発光ダイオードランプ |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011501464A (ja) * | 2007-10-24 | 2011-01-06 | テオス・インコーポレイテッド | Led光源用拡散器 |
US8415695B2 (en) | 2007-10-24 | 2013-04-09 | Switch Bulb Company, Inc. | Diffuser for LED light sources |
US8981405B2 (en) | 2007-10-24 | 2015-03-17 | Switch Bulb Company, Inc. | Diffuser for LED light sources |
WO2011096074A1 (ja) * | 2010-02-08 | 2011-08-11 | コニカミノルタオプト株式会社 | 発光装置 |
WO2012008692A2 (en) * | 2010-07-14 | 2012-01-19 | Lg Innotek Co., Ltd. | Display device |
WO2012008692A3 (en) * | 2010-07-14 | 2012-04-26 | Lg Innotek Co., Ltd. | Display device |
US9268080B2 (en) | 2010-07-14 | 2016-02-23 | Lg Innotek Co., Ltd. | Display device having light conversion member including light conversion particles |
WO2014103330A1 (ja) | 2012-12-27 | 2014-07-03 | コニカミノルタ株式会社 | 蛍光体分散液、led装置およびその製造方法 |
JP2016521463A (ja) * | 2013-05-15 | 2016-07-21 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | 基板内に散乱機構を有するled |
Also Published As
Publication number | Publication date |
---|---|
TWI516165B (zh) | 2016-01-01 |
WO2008007232A2 (en) | 2008-01-17 |
WO2008007232A3 (en) | 2008-05-08 |
KR20090017696A (ko) | 2009-02-18 |
EP2030258A2 (en) | 2009-03-04 |
TW200808117A (en) | 2008-02-01 |
CN101467266A (zh) | 2009-06-24 |
US20090256167A1 (en) | 2009-10-15 |
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