JP2012501090A - 波長変換半導体発光装置及びフィルタを含む光源 - Google Patents
波長変換半導体発光装置及びフィルタを含む光源 Download PDFInfo
- Publication number
- JP2012501090A JP2012501090A JP2011524503A JP2011524503A JP2012501090A JP 2012501090 A JP2012501090 A JP 2012501090A JP 2011524503 A JP2011524503 A JP 2011524503A JP 2011524503 A JP2011524503 A JP 2011524503A JP 2012501090 A JP2012501090 A JP 2012501090A
- Authority
- JP
- Japan
- Prior art keywords
- light
- filter
- wavelength
- peak wavelength
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 title claims description 30
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
- 239000012780 transparent material Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 69
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 34
- 238000001228 spectrum Methods 0.000 description 16
- 229910052749 magnesium Inorganic materials 0.000 description 15
- 229910052712 strontium Inorganic materials 0.000 description 13
- 229910052788 barium Inorganic materials 0.000 description 12
- 229910052791 calcium Inorganic materials 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052748 manganese Inorganic materials 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
- XQTIWNLDFPPCIU-UHFFFAOYSA-N cerium(3+) Chemical compound [Ce+3] XQTIWNLDFPPCIU-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- MGVUQZZTJGLWJV-UHFFFAOYSA-N europium(2+) Chemical group [Eu+2] MGVUQZZTJGLWJV-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910017625 MgSiO Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- -1 thicknesses Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (15)
- n型領域とp型領域の間に配置される発光層を含む半導体発光装置であって、前記発光層は第1ピーク波長を有する第1光を発するように適合される、半導体発光装置と、
前記第1光を吸収し、第2ピーク波長を有する第2光を発するように適合される第1波長変換材料、及び、
前記第1光及び前記第2光のうちの1つを吸収し、第3ピーク波長を有する第3光を発するように適合される第2波長変換材料、であって、
前記半導体発光装置によって発される光の経路に配置される、前記第1及び第2波長変換材料と、
第4ピーク波長を有する第4光を反射し、前記第4波長より長い又は短いピーク波長を有する光を透過させるように適合されるフィルタであって、前記第4光が、前記第2光の一部及び前記第3光の一部のうちの1つを含み、当該フィルタが前記第1、第2、及び第3光の少なくとも一部の経路に配置される、フィルタと、
を含む構造。 - 請求項1に記載の構造であって、
前記第1波長変換材料は、セラミック層に配置され、
前記第2波長変換材料は、透明材料層において配置される粉末である、
構造。 - 請求項1に記載の構造であって、前記第1波長変換材料及び第2波長変換材料は、前記半導体発光装置にわたり配置される透明材料において混合及び配置される粉末である、構造。
- 請求項1に記載の構造であって、
前記第1波長変換材料及び前記第2波長変換材料のうちの少なくとも1つは、前記半導体発光装置に配置され、
前記フィルタは、前記第1及び第2波長変換材料のうちの1つと直接接触にある、
構造。 - 請求項1に記載の構造であって、前記フィルタは、分散ブラッグ反射器である、構造。
- 請求項1に記載の構造であって、前記フィルタの表面は、前記半導体発光装置の表面の500μm内にある、構造。
- 請求項1に記載の構造であって、前記フィルタは、誘電層のスタックを含む、構造。
- 請求項1に記載の構造であって、前記フィルタは、第1フィルタであり、当該構造は、更に、第2フィルタ層であって、
複数の第1画素位置であって、各第1画素位置において前記第2フィルタが赤色光を透過させ、緑色及び青色光を吸収するように適合される、複数の第1画素位置と、
複数の第2画素位置であって、各第2画素位置において前記第2フィルタが緑色光を透過させ、赤色及び青色光を吸収するように適合される、複数の第2画素位置と、
複数の第3画素位置であって、各第3画素位置において前記第2フィルタが青色光を透過させ、赤色及び緑色光を吸収するように適合される、複数の第3画素位置と、
を含む第2フィルタ層を含む、構造。 - 請求項1に記載の構造であって、前記フィルタはレンズに沈着される、構造。
- 請求項1に記載の構造であって、前記第1波長変換材料及び前記第2波長変換材料のうちの少なくとも1つは、前記半導体発光装置から離間されている、構造。
- 請求項1に記載の構造であって、前記第4ピーク波長は、前記第1ピーク波長及び前記第2ピーク波長の間にある、構造。
- 請求項1に記載の構造であって、前記第4ピーク波長は、前記第2ピーク波長及び前記第3ピーク波長の間にある、構造。
- 半導体発光装置を含む少なくとも1つの光源と、
前記少なくとも1つの光源にわたり配置される第1フィルタ層であって、
複数の第1画素位置であって、各第1画素位置において前記第1フィルタが第1ピーク波長における光を透過させ、第2及び第3ピーク波長における光を吸収するように適合される、複数の第1画素位置、
複数の第2画素位置であって、各第2画素位置において前記第1フィルタが第2ピーク波長における光を透過させ、第1及び第3ピーク波長における光を吸収するように適合される、複数の第2画素位置、及び、
複数の第3画素位置であって、各第3画素位置において前記第1フィルタが第3ピーク波長における光を透過させ、第1及び第2ピーク波長における光を吸収するように適合される、複数の第3画素位置、
を含む第1フィルタ層と、
前記第1フィルタ層にわたり配置される液晶層と、
前記少なくとも1つの光源と前記第1フィルタ層との間に配置される第2フィルタ層であって、前記第2フィルタ層は前記第1、第2、及び第3ピーク波長における光を透過させ、第4ピーク波長における光を反射するように適合される、第2フィルタ層と、
を含む構造。 - 請求項13に記載の構造であって、前記第1フィルタ層は、前記第4ピーク波長の光を吸収するように適合される、構造。
- 請求項13に記載の構造であって、
前記半導体発光装置は、青色ピーク波長を有する光を発するように構成され、
前記光源は、更に、緑色又は黄色ピーク波長を有する光を発するように適合される第1波長変換材料、及び、赤色ピーク波長を有する光を発するように適合される第2波長変換材料を含み、
前記第2フィルタ層は、前記第1及び第2波長変換材料のうちの1つと直接接触にあるように配置される、
構造。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/201,428 | 2008-08-29 | ||
US12/201,428 US7888691B2 (en) | 2008-08-29 | 2008-08-29 | Light source including a wavelength-converted semiconductor light emitting device and a filter |
PCT/IB2009/053730 WO2010023624A1 (en) | 2008-08-29 | 2009-08-25 | Light source including a wavelength-converted semiconductor light emitting device and a filter |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012501090A true JP2012501090A (ja) | 2012-01-12 |
JP5938213B2 JP5938213B2 (ja) | 2016-06-22 |
Family
ID=41264208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011524503A Active JP5938213B2 (ja) | 2008-08-29 | 2009-08-25 | 波長変換半導体発光装置及びフィルタを含む光源 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7888691B2 (ja) |
EP (1) | EP2329537B1 (ja) |
JP (1) | JP5938213B2 (ja) |
KR (1) | KR101622424B1 (ja) |
CN (1) | CN102138228B (ja) |
TW (1) | TWI472056B (ja) |
WO (1) | WO2010023624A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016046266A (ja) * | 2014-08-19 | 2016-04-04 | デクセリアルズ株式会社 | 波長変換デバイス、照明ユニット、液晶モジュール及び照明方法 |
JP2018518565A (ja) * | 2015-06-08 | 2018-07-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 複合酸窒化セラミック変換体およびこの変換体を備えた光源 |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140175377A1 (en) * | 2009-04-07 | 2014-06-26 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
CN102473702B (zh) * | 2009-07-14 | 2016-02-10 | 皇家飞利浦电子股份有限公司 | 色温可变发光器 |
DE102009037730A1 (de) * | 2009-08-17 | 2011-02-24 | Osram Gesellschaft mit beschränkter Haftung | Konversions-LED mit hoher Farbwiedergabe |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
CN101697367B (zh) * | 2009-09-30 | 2014-04-02 | 烁光特晶科技有限公司 | 一种利用透明陶瓷制备led的方法 |
JP5066204B2 (ja) * | 2010-03-03 | 2012-11-07 | 株式会社東芝 | 蛍光体、および発光装置 |
JP2011233650A (ja) * | 2010-04-26 | 2011-11-17 | Toshiba Corp | 半導体発光装置 |
JP5421205B2 (ja) * | 2010-08-20 | 2014-02-19 | 株式会社東芝 | 発光装置 |
WO2012100132A1 (en) * | 2011-01-21 | 2012-07-26 | Osram Sylvania Inc. | Luminescent converter and led light source containing same |
TWI452116B (zh) * | 2011-07-05 | 2014-09-11 | Formosa Epitaxy Inc | Nitrogen oxide phosphor and a method for producing the same |
US20130056749A1 (en) * | 2011-09-07 | 2013-03-07 | Michael Tischler | Broad-area lighting systems |
JP5906433B2 (ja) * | 2011-12-19 | 2016-04-20 | パナソニックIpマネジメント株式会社 | 照明装置 |
CN102437275B (zh) * | 2011-12-27 | 2014-12-24 | 杭州浙大三色仪器有限公司 | 一种半导体发光器件 |
KR101907390B1 (ko) | 2012-04-23 | 2018-10-12 | 삼성전자주식회사 | 백색 발광 장치 및 이를 이용한 디스플레이 장치 |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
WO2014140976A1 (en) * | 2013-03-11 | 2014-09-18 | Koninklijke Philips N.V. | A dimmable light emitting arrangement |
US9761768B2 (en) * | 2013-07-08 | 2017-09-12 | Koninklijke Philips N.V. | Wavelength converted semiconductor light emitting device |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
TW201526301A (zh) * | 2013-12-30 | 2015-07-01 | Cheng Wen | 非可見光發射裝置 |
US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
TWI557952B (zh) | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | 發光元件 |
DE102014212054A1 (de) * | 2014-06-24 | 2015-12-24 | Zf Friedrichshafen Ag | Vorrichtung zum optoelektronischen Erfassen einer Wählhebelposition, Wählhebelvorrichtung, Verfahren zum Herstellen einer Vorrichtung und Verfahren zum optoelektronischen Erfassen einer Wählhebelposition |
TWI657597B (zh) | 2015-03-18 | 2019-04-21 | 新世紀光電股份有限公司 | 側照式發光二極體結構及其製造方法 |
KR102415331B1 (ko) | 2015-08-26 | 2022-06-30 | 삼성전자주식회사 | 발광 소자 패키지, 및 이를 포함하는 장치 |
CN111211206A (zh) | 2015-09-18 | 2020-05-29 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
KR102494856B1 (ko) * | 2015-12-18 | 2023-02-17 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 형광체, 발광 소자 및 이를 구비한 라이트 유닛 |
KR102533820B1 (ko) * | 2015-12-18 | 2023-05-18 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 형광체 및 이를 구비한 발광 소자 |
KR102528015B1 (ko) * | 2015-12-18 | 2023-05-10 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 시스템 |
CN107968142A (zh) | 2016-10-19 | 2018-04-27 | 新世纪光电股份有限公司 | 发光装置及其制造方法 |
US10784423B2 (en) | 2017-11-05 | 2020-09-22 | Genesis Photonics Inc. | Light emitting device |
US11335835B2 (en) * | 2017-12-20 | 2022-05-17 | Lumileds Llc | Converter fill for LED array |
TWI688805B (zh) * | 2018-12-14 | 2020-03-21 | 友達光電股份有限公司 | 背光模組 |
US10903398B2 (en) * | 2019-02-06 | 2021-01-26 | Osram Opto Semiconductors Gmbh | Dielectric film coating for full conversion ceramic platelets |
DE102020103070A1 (de) | 2020-02-06 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement |
WO2024068205A1 (en) * | 2022-09-29 | 2024-04-04 | Ams-Osram International Gmbh | Conversion element, method for producing a conversion element, and light emitting component |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183139A (ja) * | 2003-12-18 | 2005-07-07 | Seiko Instruments Inc | 照明装置及び液晶表示装置 |
JP2005251649A (ja) * | 2004-03-05 | 2005-09-15 | Sony Corp | 照明装置及びカラー液晶表示装置 |
WO2007036214A1 (de) * | 2005-09-28 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optoelektronisches bauelement |
JP2007243135A (ja) * | 2005-09-15 | 2007-09-20 | Seiko Instruments Inc | 照明装置及びこれを備える表示装置 |
JP2008502131A (ja) * | 2004-06-03 | 2008-01-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光装置用の発光セラミック |
JP2008083597A (ja) * | 2006-09-28 | 2008-04-10 | Casio Comput Co Ltd | 液晶表示装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6204899B1 (en) * | 1996-04-16 | 2001-03-20 | Dennis R. Hall | High efficiency, color coding light pipe methods for display applications, utilizing chiral liquid crystal materials |
US5813752A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue LED-phosphor device with short wave pass, long wave pass band pass and peroit filters |
US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
US5962971A (en) * | 1997-08-29 | 1999-10-05 | Chen; Hsing | LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights |
US6340824B1 (en) * | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
US5952681A (en) * | 1997-11-24 | 1999-09-14 | Chen; Hsing | Light emitting diode emitting red, green and blue light |
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
JP2002190622A (ja) | 2000-12-22 | 2002-07-05 | Sanken Electric Co Ltd | 発光ダイオード用透光性蛍光カバー |
JP2002076434A (ja) * | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | 発光装置 |
US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
US7023543B2 (en) * | 2002-08-01 | 2006-04-04 | Cunningham David W | Method for controlling the luminous flux spectrum of a lighting fixture |
US6744077B2 (en) * | 2002-09-27 | 2004-06-01 | Lumileds Lighting U.S., Llc | Selective filtering of wavelength-converted semiconductor light emitting devices |
DE112005000637T5 (de) * | 2004-03-24 | 2008-06-26 | Meijo University Educational Foundation, Nagoya | Leuchtstoff und Leuchtdiode |
US7724321B2 (en) * | 2004-09-24 | 2010-05-25 | Epistar Corporation | Liquid crystal display |
WO2006035388A2 (en) | 2004-09-30 | 2006-04-06 | Koninklijke Philips Electronics N.V. | Phosphor-converted led with luminance enhancement through light recycling |
US7682850B2 (en) * | 2006-03-17 | 2010-03-23 | Philips Lumileds Lighting Company, Llc | White LED for backlight with phosphor plates |
DE102006028409A1 (de) * | 2006-06-19 | 2007-12-20 | Polytec Gmbh | Rastermikroskop zur optischen Vermessung eines Objekts |
EP2057693A1 (en) | 2006-08-29 | 2009-05-13 | Osram-Sylvania Inc. | Enhanced emission from phosphor-converted leds using interferometric filters |
US8704254B2 (en) * | 2006-12-22 | 2014-04-22 | Philips Lumileds Lighting Company, Llc | Light emitting device including a filter |
-
2008
- 2008-08-29 US US12/201,428 patent/US7888691B2/en active Active
-
2009
- 2009-08-25 WO PCT/IB2009/053730 patent/WO2010023624A1/en active Application Filing
- 2009-08-25 KR KR1020117007174A patent/KR101622424B1/ko active IP Right Grant
- 2009-08-25 CN CN2009801335724A patent/CN102138228B/zh active Active
- 2009-08-25 EP EP09787018.2A patent/EP2329537B1/en active Active
- 2009-08-25 JP JP2011524503A patent/JP5938213B2/ja active Active
- 2009-08-26 TW TW98128690A patent/TWI472056B/zh active
-
2011
- 2011-01-06 US US12/985,394 patent/US8114692B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005183139A (ja) * | 2003-12-18 | 2005-07-07 | Seiko Instruments Inc | 照明装置及び液晶表示装置 |
JP2005251649A (ja) * | 2004-03-05 | 2005-09-15 | Sony Corp | 照明装置及びカラー液晶表示装置 |
JP2008502131A (ja) * | 2004-06-03 | 2008-01-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光装置用の発光セラミック |
JP2007243135A (ja) * | 2005-09-15 | 2007-09-20 | Seiko Instruments Inc | 照明装置及びこれを備える表示装置 |
WO2007036214A1 (de) * | 2005-09-28 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optoelektronisches bauelement |
JP2009510744A (ja) * | 2005-09-28 | 2009-03-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 放射放出オプトエレクトロニクス素子 |
JP2008083597A (ja) * | 2006-09-28 | 2008-04-10 | Casio Comput Co Ltd | 液晶表示装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016046266A (ja) * | 2014-08-19 | 2016-04-04 | デクセリアルズ株式会社 | 波長変換デバイス、照明ユニット、液晶モジュール及び照明方法 |
JP2018518565A (ja) * | 2015-06-08 | 2018-07-12 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 複合酸窒化セラミック変換体およびこの変換体を備えた光源 |
Also Published As
Publication number | Publication date |
---|---|
CN102138228B (zh) | 2013-08-14 |
EP2329537B1 (en) | 2018-08-15 |
TW201017934A (en) | 2010-05-01 |
TWI472056B (zh) | 2015-02-01 |
US7888691B2 (en) | 2011-02-15 |
US20110097833A1 (en) | 2011-04-28 |
WO2010023624A1 (en) | 2010-03-04 |
KR20110042126A (ko) | 2011-04-22 |
JP5938213B2 (ja) | 2016-06-22 |
CN102138228A (zh) | 2011-07-27 |
KR101622424B1 (ko) | 2016-05-18 |
US20100051974A1 (en) | 2010-03-04 |
US8114692B2 (en) | 2012-02-14 |
EP2329537A1 (en) | 2011-06-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5938213B2 (ja) | 波長変換半導体発光装置及びフィルタを含む光源 | |
EP1566848B1 (en) | Wavelength converted semiconductor light emitting device | |
US9392670B2 (en) | White light emitting device and white light source module using the same | |
TWI482307B (zh) | 照明結構 | |
US20080180948A1 (en) | White light emitting device and light source module for liquid crystal display backlight using the same | |
US20170352788A1 (en) | Light emitting device with wavelength converting side coat | |
TWI537526B (zh) | 包含定位於接近波導管下表面的光源之照明裝置 | |
EP2104149A1 (en) | White light emitting device and white light source module using the same | |
US8104907B2 (en) | Remote wavelength converting material configuration for lighting | |
KR101877423B1 (ko) | 산질화물 형광체 및 그를 포함한 발광소자 패키지 | |
KR101886714B1 (ko) | 산질화물 형광체 및 그를 포함한 발광소자 패키지 | |
KR101877416B1 (ko) | 산질화물 형광체 및 그를 포함한 발광소자 패키지 | |
KR20160080486A (ko) | 발광다이오드 패키지 및 이를 포함하는 백라이트 유닛 | |
KR101907617B1 (ko) | 산질화물 형광체 및 그를 포함한 발광소자 패키지 | |
KR20180047387A (ko) | 반도체 소자 패키지 어레이 | |
KR20090001228A (ko) | 형광체를 포함한 백색 발광 다이오드 및 이를 구비한백라이트 유닛 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120814 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130425 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130725 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131024 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140227 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140624 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20140630 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140725 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150420 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20150508 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151014 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160303 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160516 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5938213 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |