TWI482307B - 照明結構 - Google Patents
照明結構 Download PDFInfo
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- TWI482307B TWI482307B TW097131401A TW97131401A TWI482307B TW I482307 B TWI482307 B TW I482307B TW 097131401 A TW097131401 A TW 097131401A TW 97131401 A TW97131401 A TW 97131401A TW I482307 B TWI482307 B TW I482307B
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- 238000005286 illumination Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000000295 complement effect Effects 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 30
- 239000000919 ceramic Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 235000020637 scallop Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000005132 Calcium sulfide based phosphorescent agent Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000237509 Patinopecten sp. Species 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 229910004122 SrSi Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- -1 etching Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0015—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
- G02B6/002—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces
- G02B6/0021—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces for housing at least a part of the light source, e.g. by forming holes or recesses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
- G02B6/0083—Details of electrical connections of light sources to drivers, circuit boards, or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
本發明係關於利用側發射型LED之照明裝置。
半導體發光裝置係(諸如發光二極體(LED))係當前可用之最具效率光源。在能夠跨過可見光譜之操作的高亮度LED之製造中當前所關注的材料系統包含:III至V組半導體,特定言之係鎵、鋁、銦及氮之二元、三元及四元合金,其亦稱為III族氮化物材料;及鎵、鋁、銦、砷及磷之二元、三元及四元合金。III族氮化物裝置通常係磊晶成長在藍寶石、碳化矽或III族氮化物基板上,而III族磷化物裝置係藉由金屬有機化學汽相沈積(MOCVD)、分子光束磊晶(MBE)或其他磊晶技術磊晶成長在砷化鎵上。通常,一n-型區域係沈積於基板上,接著一發光或作用區域係沈積於該n-型區域上,爾後一p-型區域係沈積於該作用區域上。該等層之次序可被顛倒,使得該p-型區域係相鄰於該基板。
半導體發光裝置之一有前途的使用係用於液晶顯示器(LCD)中的背光。LCD通常係用於蜂巢式電話、個人數位助理(PDA)、可攜式音樂播放器、膝上型電腦、桌上型監視器、及電視應用中。本發明之一實施例論及一種需要背光之彩色或單色、透射性LCD,其中該背光可使用一或多個發射白光或彩色光之LED。該等LED係不同於雷射二極體在於該等LED發射非相干光。
在許多顯示器中,尤其係例如用於蜂巢式電話之小型顯示器中,重要的係該顯示器與背光為薄型。此外,由於此等小型顯示器通常為用電池操作,因此重要的係來自該LED之光係有效地引導至該LCD之背表面。亦重要的係來自該LED之光係藉由該背光實質上均勻地發射,以便使得一藉由該LCD顯示之影像之亮度不失真。
根據本發明之實施例,個別側發射型LED係分離地定位在一波導中,或是一起安裝在一撓性安裝台上,爾後一起定位在一波導中。結果,每個LED與該波導之間的間隙可為小,其可改良光自該LED至該波導中的耦合。由於該等LED係分離地連接至該波導,或是安裝在一撓性安裝台上,歸因於製造容限或在使用期間該波導之形狀之改變而引起對個別LED之應力被減小。
在一些實施例中,一側發射型發光裝置係定位在一第一透明構件之一開口中。該第一透明構件係定位在一第二透明構件之一開口中。該第二透明構件中的該開口可為一在該第二透明構件之邊緣之狹槽。可藉由對準該第一透明構件之邊緣上的一對準特徵與該第二透明構件中的該狹槽之邊緣上的一互補型對準特徵而使該第一透明構件置於該第二透明構件中。
在一些實施例中,一側發射型發光裝置係附接至一安裝台。該發光裝置係定位在一透明構件之一開口中,且該安裝台係經壓入配合(press fit)至該透明構件中的一溝槽中。
本發明之實施例包括與薄型波導設計結合之用於提供一均勻背光之若干低輪廓側發射型LED。本發明之一典型應用係作為一LCD中的一薄型背光。
圖1係一薄型側發射型LED 10之一實施例之一橫截面圖。可被用於以下描述之該等實施例中的薄型側發射型LED之其他適當的實施例可在Oleg Shchekin等人的於2006年6月9日申請之名為"低輪廓側發射型LED(Low Profile Side Emitting LED)"的美國申請案第11/423,419號中找到,該案已讓與給本發明受讓人並以引用的方式併入本文中。
在一實例中,該LED 10之作用層產生藍光。LED 10係形成在一起始生長基板上,諸如藍寶石、SiC或GaN。通常,生長一n層12,隨之生長一作用層14,隨之生長一p層16。該p層16係經蝕刻以曝露該下方n層14之一部分。接著,反射金屬電極18(例如,銀、鋁或一合金)係形成在該LED之表面上以接觸該n層及該p層。當該二極體係經順向偏壓時,該作用層14發射光,光之波長係由該III族氮化物作用層之組合物所決定。形成此等LED係已為人所熟知且不需要被進一步詳細描述。形成LED之額外細節係在Steigerwald等人的美國專利第6,828,596號及Bhat等人的美國專利第6,876,008號中被描述,該兩案皆已讓與給本發明受讓人並以引用的方式併入本文中。
接著,該半導體LED係被安裝在一安裝台22上作為一覆晶。該安裝台22包含經由互連26被焊接或超音波焊接至該LED上的該金屬18之金屬電極24,舉例而言,該互連可為金或焊錫。若該等電極自身可連接,舉例而言,藉由一超音波焊接或任何其他適當的接合,則可省略互連26。
該等安裝台電極24係藉由通孔電連接至在該安裝台22之底部上的墊,因此該安裝台可被表面安裝至在一印刷電路板28上之金屬墊。該電路板28上的金屬迹線電耦合該等墊至一電源。該安裝台22可由諸如陶瓷、矽、鋁等之任何適當材料形成。若該安裝台材料為導電,則一絕緣層係形成在該基板材料上,且該金屬電極圖案係形成在該絕緣層上。該安裝台22用作一機械支撐,其提供一在該LED晶片上之精緻的n電極及p電極與一電源之間的電介面,並提供散熱器。適當的安裝台係為所熟知。
為了降低LED 10之厚度,並為了防止光被該生長基板吸收,該生長基板係藉由一適用於該基板之方法予以移除,例如蝕刻、化學機械拋光、或雷射熔融,其中一雷射加熱該III族氮化物結構與生長基板之界面,熔化該III族氮化物結構之一部分並自該半導體結構釋放該基板。在一實施例中,該生長基板之移除係在LED之一陣列被安裝在一子基板晶圓上之後並在該等LED/子基板經分離(例如,藉由鋸切)之前予以實施。
在該生長基板被移除之後,在一些實施例中,剩餘的III族氮化物結構係經薄化及/或粗糙化或圖案化,舉例而言,利用一光子結晶體。一大體上平坦的磷層30係定位在該LED的頂部上,用於波長轉換自該作用層14所發射的藍光。該磷層30可被實施作為一陶瓷片並被黏附至該等LED層,或該等磷微粒可例如藉由電泳被薄膜沈積。由該磷層30所發射的光當與藍光混合時,產生白光或另一所需顏色。舉例而言,一藍光發射LED可與一單一發射黃光的磷結合,或與一發射紅光的磷及一發射綠光的磷結合。若使用一發射UV的LED,則可添加一發射藍光的磷。發射其他顏色光之磷可被添加以實現該混合白光之一所需顏色點。
可形成為發光陶瓷層之磷之實例包含以下通用式之鋁石榴石磷:(Lu1-x-y-a-b
Yx
Gdy
)3
(Al1-z
Gaz
)5
O12
:Cea
Prb
,其中0<x<1,0<y<1,,且,例如發射黃-綠範圍內的光之Lu3
Al5
O12
:Ce3+
及Y3
Al5
O12
:Ce3+
;及發射紅光範圍內的光之(Sr1-x-y
Bax
Cay
)2-z
Si5-a
Ala
N8-a
Oa
:Euz 2+
,其中,,,且,例如Sr2
Si5
N8
:Eu2+
。適當的Y3
Al5
O12
:Ce3+
陶瓷板(ceramic slab)可從美國北卡羅來納州Baikowski International Corporation of Charlotte購買。其他發射綠光-、黃光-及紅光的磷亦係適合的,包含(Sr1-a-b
Cab
Bac
)Six
Ny
Oz
:Eua 2+
(a=0.002-0.2,b=0.0-0.25,c=0.0-0.25,x=1.5-2.5,y=1.5-2.5,z=1.5-2.5),舉例而言,其包含SrSi2
N2
O2
:Eu2+
;(Sr1-u-v-x
Mgu
Cav
Bax
)(Ga2-y-z
Aly
Inz
S4
):Eu2+
,舉例而言,其包含SrGa2
S4
:Eu2+
;Sr1-x
Bax
SiO4
:Eu2+
;及(Ca1-x
Srx
)S:Eu2+
,其中0<x1,舉例而言,其包含CaS:Eu2+
及SrS:Eu2+
。
可藉由在高壓下加熱一粉末磷直至該等磷微粒之表面開始燒結在一起形成微粒之剛性團塊而形成一發光陶瓷。不同於一光學上表現為一沒有光學裂痕之單一、大磷微粒之薄膜,一發光陶瓷表現為緊密封裝的個別磷微粒,使得不同磷微粒之間的界面上具有小型光學裂痕。因此,發光陶瓷係光學上幾乎同質且具有與形成該發光陶瓷之磷材料相同的折射率。不同於一等形磷層或被置於一透明材料(諸如一樹脂)中的一磷層,一發光陶瓷通常不需要除了磷自身之外的黏結劑材料(例如一有機樹脂或環氧樹脂),使得該等個別磷微粒之間具有一極小的空間或具有一不同折射率之材料。結果,一發光陶瓷為透明或半透明,其不同於一等形磷層。對於有關一可連同本發明一起使用之發光陶瓷之更多資訊,見美國公開案第2005/0269582號,該案係以引用的方式併入本文中。
在一實施例中,該發光陶瓷係eCAS,其係由5.436克Ca3
N2
(>98%純度)、4.099克AlN(99%)、4.732克Si3
N4
(>98%純度)及0.176克Eu2
O3
(99.99%純度)合成之Ca0.99
AlSiN3
:Eu0.01
。該等粉末係藉由行星式球磨研磨予以混合,且在1500。C下在H2
/N2
(5/95%)的大氣中燃燒4小時。該顆粒狀粉末係在5kN下單軸地壓為粒狀物並在3200巴下經等壓平衡地冷壓。該等粒狀物係在1600℃下在H2
/N2
(5/95%)的大氣中燒結4小時。該等所得粒狀物顯示一閉合的多孔性且隨後係在2000巴及1700℃下經等壓平衡地熱壓以獲取具有>98%理論密度之密集陶瓷。
在一實施例中,該發光陶瓷係BSSNE,其係Ba2-x-z
Mx
Si5-y
Aly
N8-y
Oy
:Euz
(M=Sr,Ca;,,)。首先,Ba2-x-z
Mx
Si5-y
Aly
N8-y
Oy
:Euz
(M=Sr,Ca;,,)係以粉末形式製備,舉例而言,藉由碳熱還原,其包含利用2-丙醇作為分散劑藉由行星式球磨研磨予以混合60克BaCO3
、11.221克SrCO3
及1.672克Eu2
O3
(所有為99.99%純度)。乾燥之後,該混合物係在形成氣體大氣中在1000℃下燃燒4小時且因此所得的Ba0.8
Sr0.2
O:Eu(2%)之10克係與5.846克Si3
N4
(>98%純度)、0.056克AlN(99%純度)及1.060克石墨(微晶級)混合。該等粉末係經由20分鐘的行星式球磨研磨徹底混合且在形成氣體大氣中在1450℃下燃燒4小時以獲取一前驅物粉末Ba2-x-z
Mx
Si5-y
Aly
N8-y
Oy
:Euz
(M=Sr,Ca;,,)。該粉末係利用HCl清洗並經再次研磨。該所獲前驅物粉末則在1550℃及80MPa下經熱壓產生密集陶瓷體。此等係經切片、拋光與切割以獲取該所需形狀及光學表面屬性。若須要,該陶瓷可在1300℃下在氮中經退火以移除缺陷。
在一實施例中,該發光陶瓷係SSONE,其係藉由混合80.36克SrCO3
(99.99%純度)、20.0克SiN4/3
(>98%純度)及2.28克Eu2
O3
(99.99%純度)並在N2
/H2
(93/7)大氣中在1200℃下燃燒4小時而製成。清洗之後,該前驅物粉末係在10kN下經單軸地加壓並隨後在3200巴下經等壓平衡的冷壓。燒結通常係在1550℃與1580℃之間在H2
/N2
(5/95)或純氮大氣下完成。
回到圖1,一反射膜32係形成在該磷層30上。該反射膜32可為鏡面反射的或漫射的。一鏡面反射器可為一由有機層或無機層形成的分散式布拉格(Bragg)反射器(DBR)。該鏡面反射器亦可為一由鋁或其他反射性金屬或DBR及金屬之一組合形成之層。一漫射反射器可由一沈積在一粗糙表面上的金屬或一諸如一適當的白色塗料的漫射材料形成。該磷層30亦有助於漫射該光以改良光提取效率。
在一實施例中,該安裝台22具有一為大約380微米之厚度,該等半導體層具有一為大約5微米之組合厚度,該磷層30具有一為大約200微米之厚度,且該反射膜32具有一為大約150微米之厚度,因此該LED加上該安裝台為小於1毫米厚。當然,該LED 10可被製成為較厚。該LED之每一側之長度通常為小於1毫米。雖然該實例中顯示之該等LED為正方形,但其等可為任何形狀。
若該LED不必為超薄,則可藉由如下增大該側發射之效率:在該n層12上添加一透明波導層,在合併反射微粒之該磷層或一粗糙/棱形表面上添加一散射層,及在該磷層30下添加一個二向色鏡或一單向鏡,致使藉由該反射膜32向下反射之光係不被該等半導體層吸收。
當用於發光系統中時,側發射型覆晶LED提供許多優點。在背光中,由於光至一波導中的更佳耦合,側發射型覆晶LED允許利用更薄的波導、更少的LED、更佳的照明均勻度及更高的效率。側發射型LED之一個難點在於為了最佳結果,該等LED較佳地係置於一波導中。每個LED與該波導之間的任何間隙較佳地係製為儘可能小以避免損失。若將若干LED安裝在一剛性板上,爾後經對準並置於該波導中的開口中,則難以達成既定共同製造容限的足夠小間隙。此外,即使實現一足夠小的間隙,但舉例而言,由於熱循環或一可攜式裝置之機械撓性引起的該波導之形狀之改變可施加應力於該等LED上,其可導致故障。
根據本發明之實施例,將個體LED分離地定位在一波導中,或是一起安裝在一撓性安裝台上,爾後一起定位在一波導中。結果,每個LED與該波導之間的間隙可為小。由於該等LED係分離地連接至該波導,或是安裝在一撓性安裝台上,歸因於製造容限或在使用期間由該波導之形狀之改變而引起對個別LED之應力被減小。
在圖2中,一安裝在一安裝台22上之側發射型LED 10係經定位在固態、透明波導材料之一區段36中的開口中。舉例而言,波導區段36可為丙烯酸酯(例如PMMA)、硬矽樹脂、模製塑膠、聚碳酸酯或任何其他適當的材料。一鏡面膜(未顯示)可覆蓋波導區段36之底部。舉例而言,該膜可為可購自3M公司之增強型鏡面反射器(ESR)膜。
圖3係圖2中顯示之結構之橫截面圖。在圖3中繪示之該裝置中,開口34不延伸穿過波導區段36之整個厚度,雖然在其他實施例其可穿過。圖1中顯示LED 10包含至少該半導體結構、磷層及反射體層,該LED係配置於波導區段36中。安裝台22延伸在波導區段36之底部下。一諸如矽樹脂或環氧樹脂之黏著劑可被置於波導區段36與安裝台22之間。
波導區段36為小型,在一些實施例中其在一側上係屬於毫米級。舉例而言,圖2及3中顯示之該波導區段可在面積上為3毫米乘以3毫米,且厚度為小於1毫米。LED 10可居於波導區段36之中心,如圖2及3中所繪示,雖然其不必須如此。
波導區段36係經設計以擬合於一較大波導中的狹槽,如圖4中繪示。舉例而言,如圖4中繪示,波導40可為足夠大用於一具有9英寸的對角線之螢幕。若干狹槽42被置於波導40之一邊緣上。每個狹槽42可容納一波導區段36,如圖2及3中繪示。雖然圖4中顯示6個狹槽42,理所當然取決於所需LED之數目可使用更多或更少狹槽,LED之數目係取決於將被照明之螢幕之大小及所需亮度。波導40之實際總厚度可在300至800微米之間。一反射膜(未顯示)可被置於波導40之底部上。
圖5繪示一定位在一較大波導40之狹槽42中的波導區段36。波導區段36及波導40可由相同材料形成,雖然其等不必須如此。當使用不同材料時,形成波導區段36及波導40之該等材料較佳地係經選擇以具有相當接近的折射率。每個波導區段36可為分離地連接至波導40,使得(舉例而言)藉由機械撓性或熱循環引起之波導40之形狀的改變不加應力於個別LED。
波導區段36之側係經塑形為具有一對準特徵,且狹槽42之側係經塑形為具有一互補式對準特徵,使得波導區段36係與狹槽42自我對準。在圖5中,該對準特徵係波導區段36之側上的一V-形邊緣。圖6A及6B繪示不同的對準特徵。在圖6A顯示之該裝置中,該對準特徵係一半圓形邊緣。在圖6B中顯示之該裝置中,一調整片係形成在波導區段36之邊緣上,其擬合於形成於波導40中的該狹槽之邊緣上的一互補式凹口。可使用任何適當的對準特徵;圖5、6A及6B僅繪示實例。光係自LED 10發射至波導區段36中,爾後至波導40中。
在一些實施例中,一黏著劑(諸如矽樹脂或環氧樹脂)係被置於波導區段36與較大波導40之間。除了黏著劑屬性之外,該黏著劑可經選擇為一匹配波導區段36及波導40之接近的折射率,以便改良光自波導區段36至波導40之耦合。在一些實施例中,波導區段36及較大波導40一起安裝使得該兩者之間無空氣間隙。
圖2及圖5中顯示之該等波導區段為正方形。在圖7中繪示之裝置中,波導區段36具有一彎曲邊緣50,其中波導區段36擬合於波導40之狹槽42。波導區段36亦可在邊緣48(其形成該波導之邊緣)上彎曲。彎曲邊緣50可改良自波導區段36至波導40中的光之提取。彎曲邊緣48可在與空氣之界面處形成全內反射,降低在邊緣48處自波導區段36損失之光量。
圖8繪示一波導區段之一替代實施例。在圖8繪示之該裝置中,LED 10係安裝在一參考表面52上或其內。參考表面52可替代安裝台22,或安裝台22可安裝在參考表面52上。參考表面52較佳地為反射性並導熱,以引導熱遠離LED 10。一具有一開口以容納LED 10之波導區段54係定位於參考表面52上。如圖8中繪示,參考表面52具有一比波導區段54更大的橫向寬度。舉例而言,參考表面52可為一例如銅之導熱金屬或一抗高溫塑膠。參考表面52可由一例如鋁或銀之反射性材料塗布。圖8中繪示之該波導區段為環形。
圖9繪示被置於一較大波導40之一開口42中的圖8之該波導區段。開口42可略微小於波導區段54,使得當波導區段54係被置於開口42中時,參考表面52壓住波導40。波導區段54可藉由與波導40之一張力配合而附接至波導40,或一黏著劑可被置於波導區段54與波導40之間,或波導40與參考表面52之間。
在圖10繪示之裝置中,並非如圖5及圖9中每個LED係單獨地連接至波導40,該等LED 10係連接至一撓性電路板56,爾後經定位在波導40之開口中。由於電路板56為撓性,若波導40之形狀改變,則電路板56可彎曲,因此對個別LED 10上的任何應力係相對於安裝在一剛性板上的LED被減小。
圖11及12繪示一壓入配合至一波導中的LED。一開口42係形成在波導40中以容納LED 10。如圖11中所繪示,開口62可具有有不同角度之壁,用以按不同角度折射並反射由LED 10發射之光,使得該光係經混合以引起均勻發射。該等壁之扇貝形僅係該等壁之許多適當的形狀之一種,且沿著每個壁之扇貝形之數目不為關鍵所在。
波導40中的一溝槽60容納安裝台64,安裝台64上安裝有LED 10。安裝台64可替代圖1中顯示之安裝台22,或安裝台22可被安裝於安裝台64上。在一些實施例中,安裝台64係經緊密鋸截至LED 10之邊緣,如圖11中所繪示。安裝台64可經壓入配合至溝槽60中,使得溝槽60中無需黏著劑或無需膠合黏著劑。對於一給定的波導厚度,不同於在圖5及9中繪示之該等實施例中,LED 10係更接近波導40之頂部,其可改良光自LED 10至波導40之耦合。
在一些實施例中,在各個圖式中繪示之該等特徵可經組合。作為一實例,一LED可如圖11及12中所繪示經壓入配合至一被置於一較大波導之狹槽中的波導區段中,如圖5繪示。
以上描述之該等實施例可用作一用於一LCD顯示器之背光。在一成品顯示器中,一薄型漫射體膜可經黏附於該波導40之該頂表面上以漫射光。一亮度增強膜(BEF)可被配置於該漫射體膜上,以在該波導40之前方直接重新導向光以在一相對小的角度內,以提高在正常檢視方向中的亮度。接著,一傳統彩色或單色LCD配置於波導40上。該LCD可利用像素遮光器(例如一結合一TFT陣列之液晶層)、偏光器及RGB濾光器而產生彩色影像。此等LCD為人所熟知。
已詳細描述本發明,考慮到該揭示之內容,熟習此項技術者將意識到在無違本文描述之本發明觀點之精神下可對本發明作出修改。因此意味著本發明之範圍不限於所繪示與描述之該等特定實施例。
10...LED
12...n層
14...作用層
16...p層
18...反射金屬電極
22...安裝台
24...金屬電極
26...互連
28...印刷電路板
30...磷層
32...反射膜
34...開口
36...波導區段
40...波導
42...狹槽
48...邊緣
50...彎曲邊緣
52...參考表面
54...波導區段
56...撓性電路板
60...溝槽
62...開口
64...安裝台
圖1係一根據本發明之一實施例之低輪廓、側發射型LED之一橫截面圖。
圖2繪示一定位在一波導區段中的側發射型LED。
圖3係一定位在一波導區段中的側發射型LED之橫截面圖。
圖4係一具有用於多個波導區段之狹槽之波導的平面圖。
圖5係一定位在一波導中的一波導區段之透視圖。
圖6A及6B係用於對準一波導區段與一較大波導之交替對準特徵之橫截面圖。
圖7係一定位在一波導中具有一彎曲邊緣之波導區段之透視圖。
圖8繪示一包含一參考表面之波導區段。
圖9繪示插入於一較大波導中的圖8之該波導區段。
圖10係安裝在一撓性電路板上並光學連接至一波導之若干LED之平面圖。
圖11係一壓入配合至一波導中的LED中之透視圖。
圖12係圖11中繪示之裝置之一橫截面圖。
10...LED
12...n層
14...作用層
16...p層
18...反射金屬電極
22...安裝台
24...金屬電極
26...互連
28...印刷電路板
30...磷層
32...反射膜
Claims (15)
- 一種照明(illumination)結構,其包括:一半導體發光(light emitting)裝置,其包括:一半導體結構,其包括配置於一n-型區域與一p-型區域之間的一發光層;一第一接觸件(contact),其電連接至該n-型區域;一第二接觸件,其電連接至該p-型區域,其中該第一接觸件與該第二接觸件係形成在該半導體結構之一第一側上,使得該半導體結構係一覆晶(flip chip);一反射器,其配置於該半導體結構之一第二側上,該反射器實質上平行於該發光層之主表面(major surface),使得自該發光裝置射出之大多數(majority)光射出穿過該發光裝置之若干側表面;一第一透明構件(transparent member),其具有至少一開口(opening),其中定位有該發光裝置之至少一部分,藉此自該發光裝置之該等側射出之光之至少一部分係光學耦合至該第一透明構件中;及一第二透明構件,其具有至少一開口,其中定位有該第一透明構件之至少一部分。
- 如請求項1之結構,其中該半導體發光裝置進一步包括被置於該反射器與該半導體結構之間的一波長轉換材料,其中該波長轉換材料係經組態以吸收由該發光層發射之具有一波長之光,並發射具有一更長波長之光。
- 如請求項1之結構,其中該第一透明構件中的該開口不 延伸穿過該第一透明構件之一整個厚度。
- 如請求項1之結構,其進一步包括被置於該第一透明構件之一邊緣上的一對準特徵及被置於該第二透明構件中的該開口之一邊緣上的一互補式對準特徵。
- 如請求項1之結構,其進一步包括被置於該第一透明構件與該第二透明構件之間的一黏著劑。
- 如請求項1之結構,其中該第二透明構件中的該開口係在該第二透明構件之一邊緣上的一狹槽。
- 如請求項1之結構,其中該第一透明構件之一邊緣為彎曲。
- 如請求項1之結構,其中該半導體發光裝置係附接至一安裝台。
- 如請求項8之結構,其中該安裝台係經定位相鄰於該第一透明構件。
- 如請求項8之結構,其中該安裝台係經定位在一形成於該第一透明構件中的一溝槽中。
- 如請求項1之結構,其中該第一透明構件中的該開口具有若干側壁,至少一側壁具有沿著該側壁之一長度之變化的角度以改變沿著該側壁之光之一折射。
- 一種照明結構,其包括:一半導體發光裝置,其包括:一半導體結構,其包括配置於一n-型區域與一p-型區域之間的一發光層;一第一接觸件,其電連接至該n-型區域; 一第二接觸件,其電連接至該p-型區域,其中該第一接觸件與該第二接觸件係形成在該半導體結構之一第一側上,使得該半導體結構係一覆晶;一反射器,其配置於該半導體結構之一第二側上,該反射器實質上平行於該發光層之主表面,使得自該發光裝置射出之大多數光射出穿過該發光裝置之若干側表面;一安裝台(mount),其中該半導體發光裝置係附接(attached)至該安裝台;一透明構件,其包括:一開口,其中定位有該發光裝置之至少一部分;及一溝槽(groove),其中定位有該安裝台之至少一部分;其中自該發光裝置之該等側射出之光之至少一部分係光學耦合至該透明構件中;及其中該安裝台係藉由在該安裝台與該溝槽之間的一壓入配合(press fit)而連接至該透明構件。
- 如請求項12之結構,其中該透明構件中的該開口具有若干側壁,至少一側壁具有沿著該側壁之一長度之變化的角度以改變沿著該側壁之光之一折射。
- 如請求項12之結構,其中該開口之一深度係大於該溝槽之一深度。
- 如請求項12之結構,其進一步包括在該開口之一邊緣與該發光裝置之一側之間的一間隙。
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Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8080828B2 (en) * | 2006-06-09 | 2011-12-20 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED with window layer and phosphor layer |
US9046634B2 (en) * | 2007-06-14 | 2015-06-02 | Philips Lumileds Lighting Company, Llc | Thin flash or video recording light using low profile side emitting LED |
CN101821866B (zh) * | 2007-10-08 | 2012-05-23 | 3M创新有限公司 | 具有粘接的半导体波长转换器的发光二极管 |
EP2311104B1 (de) * | 2008-08-11 | 2018-03-28 | OSRAM GmbH | Konversions-led |
US20100127289A1 (en) * | 2008-11-26 | 2010-05-27 | Bridgelux, Inc. | Method and Apparatus for Providing LED Package with Controlled Color Temperature |
US8952717B2 (en) * | 2009-02-20 | 2015-02-10 | Qmc Co., Ltd. | LED chip testing device |
US8212263B2 (en) * | 2009-04-03 | 2012-07-03 | Koninklijke Philips Electronics N.V. | Backlight including semiconductior light emitting devices |
US8104907B2 (en) * | 2009-04-29 | 2012-01-31 | Koninklijke Philips Electronics N.V. | Remote wavelength converting material configuration for lighting |
US8486761B2 (en) * | 2010-03-25 | 2013-07-16 | Koninklijke Philips Electronics N.V. | Hybrid combination of substrate and carrier mounted light emitting devices |
US8319247B2 (en) * | 2010-03-25 | 2012-11-27 | Koninklijke Philips Electronics N.V. | Carrier for a light emitting device |
KR20120024104A (ko) * | 2010-09-06 | 2012-03-14 | 서울옵토디바이스주식회사 | 발광 소자 |
US8605232B2 (en) * | 2011-01-18 | 2013-12-10 | Apple Inc. | Display backlight having light guide plate with light source holes and dual source packages |
TWI431291B (zh) * | 2011-07-14 | 2014-03-21 | Chroma Ate Inc | 發光二極體量測裝置 |
CN102299228A (zh) * | 2011-09-23 | 2011-12-28 | 厦门市三安光电科技有限公司 | 一种覆晶插件式发光二极管芯片结构及其制造方法 |
CN102437276A (zh) * | 2011-11-25 | 2012-05-02 | 四川新力光源有限公司 | 一种led器件及其制作方法 |
US20140146543A1 (en) * | 2012-11-26 | 2014-05-29 | Magic Lighting Optics | Outdoor lighting device |
DE102013104840A1 (de) * | 2013-05-10 | 2014-11-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterbauelementen |
CN103346246B (zh) * | 2013-07-04 | 2016-05-04 | 江门职业技术学院 | 基于光子晶体的高效白光混合发光二极管的制备方法 |
DE102014105839A1 (de) | 2014-04-25 | 2015-10-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
CN113437054A (zh) | 2014-06-18 | 2021-09-24 | 艾克斯展示公司技术有限公司 | 微组装led显示器 |
US9991163B2 (en) | 2014-09-25 | 2018-06-05 | X-Celeprint Limited | Small-aperture-ratio display with electrical component |
US9799719B2 (en) | 2014-09-25 | 2017-10-24 | X-Celeprint Limited | Active-matrix touchscreen |
US9871345B2 (en) | 2015-06-09 | 2018-01-16 | X-Celeprint Limited | Crystalline color-conversion device |
CN105185877A (zh) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | 蓝宝石led灯丝的制备方法 |
CN105185896A (zh) * | 2015-06-18 | 2015-12-23 | 江苏苏创光学器材有限公司 | 蓝宝石led灯丝的生产方法 |
US10133426B2 (en) | 2015-06-18 | 2018-11-20 | X-Celeprint Limited | Display with micro-LED front light |
US11061276B2 (en) | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
US10380930B2 (en) | 2015-08-24 | 2019-08-13 | X-Celeprint Limited | Heterogeneous light emitter display system |
US10230048B2 (en) | 2015-09-29 | 2019-03-12 | X-Celeprint Limited | OLEDs for micro transfer printing |
US10066819B2 (en) | 2015-12-09 | 2018-09-04 | X-Celeprint Limited | Micro-light-emitting diode backlight system |
US10193025B2 (en) * | 2016-02-29 | 2019-01-29 | X-Celeprint Limited | Inorganic LED pixel structure |
US10153256B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-transfer printable electronic component |
US10153257B2 (en) | 2016-03-03 | 2018-12-11 | X-Celeprint Limited | Micro-printed display |
US10199546B2 (en) | 2016-04-05 | 2019-02-05 | X-Celeprint Limited | Color-filter device |
US10008483B2 (en) | 2016-04-05 | 2018-06-26 | X-Celeprint Limited | Micro-transfer printed LED and color filter structure |
CN105870297A (zh) * | 2016-05-27 | 2016-08-17 | 福建鸿博光电科技有限公司 | 一种led光源及其封装方法 |
US9997501B2 (en) | 2016-06-01 | 2018-06-12 | X-Celeprint Limited | Micro-transfer-printed light-emitting diode device |
US11137641B2 (en) | 2016-06-10 | 2021-10-05 | X Display Company Technology Limited | LED structure with polarized light emission |
US9980341B2 (en) | 2016-09-22 | 2018-05-22 | X-Celeprint Limited | Multi-LED components |
US10782002B2 (en) | 2016-10-28 | 2020-09-22 | X Display Company Technology Limited | LED optical components |
US10347168B2 (en) | 2016-11-10 | 2019-07-09 | X-Celeprint Limited | Spatially dithered high-resolution |
CN106870966A (zh) * | 2017-02-14 | 2017-06-20 | 青岛海信电器股份有限公司 | 四周发光的贴片式led及背光模组 |
TWI677116B (zh) * | 2017-03-29 | 2019-11-11 | 宏齊科技股份有限公司 | 半導體發光模組及其半導體發光二極體晶片 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060284190A1 (en) * | 2005-06-17 | 2006-12-21 | Zimmerman Scott M | Light emitting diodes with reflective electrode and side electrode |
US20070085105A1 (en) * | 2005-10-18 | 2007-04-19 | Goldeneye, Inc. | Light emitting diode and side emitting lens |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5792881A (en) * | 1980-12-02 | 1982-06-09 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting element |
JPH0651129A (ja) * | 1992-07-27 | 1994-02-25 | Inoue Denki Kk | 照明装置 |
US5613751A (en) * | 1995-06-27 | 1997-03-25 | Lumitex, Inc. | Light emitting panel assemblies |
JP3466817B2 (ja) * | 1996-05-02 | 2003-11-17 | ローム株式会社 | Led発光装置およびその製造方法 |
JPH10247412A (ja) * | 1997-03-03 | 1998-09-14 | Omron Corp | 面光源装置 |
JPH11265610A (ja) * | 1998-03-17 | 1999-09-28 | Enplas Corp | 発光ダイオード、サイドライト型面光源装置及び液晶表示装置 |
JP4077170B2 (ja) * | 2000-09-21 | 2008-04-16 | シャープ株式会社 | 半導体発光装置 |
US6598998B2 (en) | 2001-05-04 | 2003-07-29 | Lumileds Lighting, U.S., Llc | Side emitting light emitting device |
US6828596B2 (en) | 2002-06-13 | 2004-12-07 | Lumileds Lighting U.S., Llc | Contacting scheme for large and small area semiconductor light emitting flip chip devices |
DE20217540U1 (de) * | 2002-11-13 | 2003-01-16 | Informationstechnik Meng Gmbh | Schild |
CN1549660A (zh) * | 2003-05-23 | 2004-11-24 | 铼宝科技股份有限公司 | 具侧向光利用功能的有机电激发光装置及侧向光利用方法 |
US6876008B2 (en) | 2003-07-31 | 2005-04-05 | Lumileds Lighting U.S., Llc | Mount for semiconductor light emitting device |
US7361938B2 (en) | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
JP2006019409A (ja) * | 2004-06-30 | 2006-01-19 | Mitsubishi Chemicals Corp | 発光装置並びにそれを用いた照明、ディスプレイ用バックライト及びディスプレイ |
JP4535792B2 (ja) * | 2004-07-01 | 2010-09-01 | Nec液晶テクノロジー株式会社 | バックライト及びそのバックライトを備えた液晶表示装置 |
JP2006237217A (ja) * | 2005-02-24 | 2006-09-07 | Toshiba Discrete Technology Kk | 半導体発光装置及び面発光装置 |
JP4721160B2 (ja) * | 2005-03-29 | 2011-07-13 | ミネベア株式会社 | 面状照明装置 |
JP4430585B2 (ja) * | 2005-06-16 | 2010-03-10 | 三菱レイヨン株式会社 | 面光源装置 |
KR100638874B1 (ko) * | 2005-07-06 | 2006-10-27 | 삼성전기주식회사 | Led 광원이 도광판에 삽입된 백라이트 장치의광원-도광판 구조 및 이를 포함하는 백라이트 장치 |
JP4678256B2 (ja) * | 2005-08-01 | 2011-04-27 | ソニー株式会社 | 面状光源装置及びカラー液晶表示装置組立体 |
KR20070083131A (ko) * | 2006-02-20 | 2007-08-23 | 삼성전자주식회사 | 백라이트 어셈블리 및 이를 포함하는 표시장치 |
US8080828B2 (en) * | 2006-06-09 | 2011-12-20 | Philips Lumileds Lighting Company, Llc | Low profile side emitting LED with window layer and phosphor layer |
TWM324222U (en) * | 2007-05-08 | 2007-12-21 | Chunghwa Picture Tubes Ltd | Side-edge type backlight module |
US9046634B2 (en) * | 2007-06-14 | 2015-06-02 | Philips Lumileds Lighting Company, Llc | Thin flash or video recording light using low profile side emitting LED |
US20090046479A1 (en) * | 2007-08-16 | 2009-02-19 | Philips Lumileds Lighting Company, Llc | Thin Backlight Using Low Profile Side Emitting LED |
US7652301B2 (en) * | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
-
2007
- 2007-08-16 US US11/840,114 patent/US7538359B2/en not_active Expired - Fee Related
-
2008
- 2008-08-14 CN CN200880103742.XA patent/CN101784838B/zh not_active Expired - Fee Related
- 2008-08-14 WO PCT/IB2008/053276 patent/WO2009022315A2/en active Application Filing
- 2008-08-14 EP EP08807325A patent/EP2176585A2/en not_active Withdrawn
- 2008-08-14 JP JP2010520671A patent/JP5285704B2/ja not_active Expired - Fee Related
- 2008-08-15 TW TW097131401A patent/TWI482307B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060284190A1 (en) * | 2005-06-17 | 2006-12-21 | Zimmerman Scott M | Light emitting diodes with reflective electrode and side electrode |
US20070085105A1 (en) * | 2005-10-18 | 2007-04-19 | Goldeneye, Inc. | Light emitting diode and side emitting lens |
Also Published As
Publication number | Publication date |
---|---|
JP5285704B2 (ja) | 2013-09-11 |
CN101784838B (zh) | 2014-05-14 |
US7538359B2 (en) | 2009-05-26 |
WO2009022315A3 (en) | 2009-04-09 |
JP2010537399A (ja) | 2010-12-02 |
TW200926456A (en) | 2009-06-16 |
EP2176585A2 (en) | 2010-04-21 |
CN101784838A (zh) | 2010-07-21 |
US20090045420A1 (en) | 2009-02-19 |
WO2009022315A2 (en) | 2009-02-19 |
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