JP2007523481A - 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法 - Google Patents

埋め込みガードリング及び耐放射線性分離構造並びにその製造方法 Download PDF

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JP2007523481A
JP2007523481A JP2006553340A JP2006553340A JP2007523481A JP 2007523481 A JP2007523481 A JP 2007523481A JP 2006553340 A JP2006553340 A JP 2006553340A JP 2006553340 A JP2006553340 A JP 2006553340A JP 2007523481 A JP2007523481 A JP 2007523481A
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substrate
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semiconductor device
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JP2007523481A5 (enExample
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モーリス、ウェズリー・エイチ
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Silicon Space Tech Corp
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Silicon Space Tech Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006553340A 2004-02-17 2005-02-15 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法 Pending JP2007523481A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US54527104P 2004-02-17 2004-02-17
US10/951,283 US7304354B2 (en) 2004-02-17 2004-09-27 Buried guard ring and radiation hardened isolation structures and fabrication methods
PCT/US2005/004740 WO2005079400A2 (en) 2004-02-17 2005-02-15 Buried guard ring and radiation hardened isolation structures and fabrication methods

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JP2012129441A Division JP5607111B2 (ja) 2004-02-17 2012-06-07 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法

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JP2007523481A true JP2007523481A (ja) 2007-08-16
JP2007523481A5 JP2007523481A5 (enExample) 2008-04-03

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JP2012129441A Expired - Lifetime JP5607111B2 (ja) 2004-02-17 2012-06-07 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法

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US (6) US7304354B2 (enExample)
EP (1) EP1716591A4 (enExample)
JP (2) JP2007523481A (enExample)
WO (1) WO2005079400A2 (enExample)

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JP2011238760A (ja) * 2010-05-10 2011-11-24 Denso Corp 半導体装置
JP2013033917A (ja) * 2011-07-05 2013-02-14 Denso Corp 半導体装置
JP2014146833A (ja) * 2014-04-09 2014-08-14 Denso Corp 半導体装置
JP2014170831A (ja) * 2013-03-04 2014-09-18 Seiko Epson Corp 回路装置及び電子機器
JP2016164989A (ja) * 2008-02-14 2016-09-08 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ａｎａｌｏｇｉｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 分離されたｃｍｏｓおよびバイポーラトランジスタ、それらのための分離構造、ならびにその作製方法
JP2016167613A (ja) * 2007-03-28 2016-09-15 アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ａｎａｌｏｇｉｃ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ 絶縁分離された集積回路装置
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