JP2014170831A - 回路装置及び電子機器 - Google Patents
回路装置及び電子機器 Download PDFInfo
- Publication number
- JP2014170831A JP2014170831A JP2013041807A JP2013041807A JP2014170831A JP 2014170831 A JP2014170831 A JP 2014170831A JP 2013041807 A JP2013041807 A JP 2013041807A JP 2013041807 A JP2013041807 A JP 2013041807A JP 2014170831 A JP2014170831 A JP 2014170831A
- Authority
- JP
- Japan
- Prior art keywords
- type
- circuit
- layer
- transistor
- buried layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 claims abstract description 96
- 238000001514 detection method Methods 0.000 claims description 34
- 230000000694 effects Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 197
- 238000000034 method Methods 0.000 description 28
- 239000012535 impurity Substances 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000013256 coordination polymer Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000004886 head movement Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0646—PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0045—Full bridges, determining the direction of the current through the load
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
【解決手段】回路装置は、P型基板41上の第1のN型埋め込み層51上に形成されるDMOS構造のトランジスターにより構成され、第1の領域10に形成される第1の回路と、第1のN型埋め込み層51と分離された第2のN型埋め込み層52上に形成されるCMOS構造のトランジスターにより構成され、第2の領域20に形成される第2の回路と、を含む。
【選択図】図2
Description
図1に、本実施形態の比較例の基板構成を示す。図1は、回路装置を構成する集積回路装置の基板の断面図である。
図2に、上記のような課題を解決できる本実施形態の基板構成例を示す。図2は、回路装置(例えば図3の回路装置200)を構成する集積回路装置の基板の断面図である。
図3に、上述の基板構成を適用できる回路装置の構成例として、モータードライバーの構成例を示す。回路装置200は、ブリッジ回路210、検出回路250を含む。そして検出回路250は、電圧検出回路220、基準電圧生成回路230、制御回路240を含む。なお以下では、回路装置全体が1つの集積回路装置で構成される場合を例に説明するが、本実施形態はこれに限定されない。即ち回路装置の一部(例えばブリッジ回路210、電圧検出回路220)が1つの集積回路装置で構成され、その集積回路装置に図2の基板構成が適用されてもよい。
図7に、DMOS構造のN型トランジスターの詳細な構成例を示す。図7は、基板の厚さ方向における断面図である。なお図2で説明した構成要素と同一の構成要素については同一の符号を付し、適宜説明を省略する。
図9(A)〜図12(C)を用いて、DMOS構造のトランジスターの製造プロセスフローについて説明する。なお、図面左側にN型トランジスターを示し、図面右側にP型トランジスターを示す。
図13に、本実施形態の回路装置200(モータードライバー)が適用された電子機器の構成例を示す。電子機器は、処理部300、記憶部310、操作部320、入出力部330、回路装置200、これらの各部を接続するバス340、モーター280を含む。以下ではモーター駆動によりヘッドや紙送りを制御するプリンターを例にとり説明するが、本実施形態はこれに限定されず、種々の電子機器に適用可能である。
41 P型基板、51〜53 N型埋め込み層、
61,62 ディープN型ウェル、71 P型ボディ、
81〜84,85a,85b N型プラグ、91〜98 P型層、
101 P型埋め込み層、102 P型層、111 P型ウェル、
112,113a,113b N型ウェル、
121〜129,123a、123b N型層、
131〜136,137a、137b P型層、
141〜143,141a,141b,144a,144b ゲート層、
151,151a,151b,152a,152b 絶縁層、
171a,171b,172a,172b N型層、
200 回路装置、210 ブリッジ回路、220 電圧検出回路、
221 コンパレーター、230 基準電圧生成回路、240 制御回路、
250 検出回路、280 モーター、290 センス抵抗、
300 処理部、310 記憶部、320 操作部、330 入出力部、
340 バス、CP 寄生容量、Ich チョッピング電流、
OUT1,OUT2 端子、Q1〜Q4 DMOSトランジスター、
RNF,RNFS 端子、TC1,TC2 チャージ期間、
TD1,TD2 ディケイ期間、TVB 端子、VBB 電源電圧、
VR 基準電圧
Claims (13)
- P型基板上の第1のN型埋め込み層上に形成されるDMOS構造のトランジスターにより構成される第1の回路と、
前記第1のN型埋め込み層と分離された第2のN型埋め込み層上に形成されるCMOS構造のトランジスターにより構成される第2の回路と、
を含むことを特徴とする回路装置。 - 請求項1において、
前記第2の回路の領域は、
前記第2のN型埋め込み層の電位を設定するN型プラグ領域により囲まれていることを特徴とする回路装置。 - 請求項1又は2において、
前記CMOS構造のトランジスターは、
前記第2のN型埋め込み層上に形成されるP型層上に形成されることを特徴とする回路装置。 - 請求項3において、
前記P型層は、
P型埋め込み層であることを特徴とする回路装置。 - 請求項3又は4において、
前記P型基板の電位を供給するパッドと、
前記パッドから前記P型層へ電位を供給するための第1配線と、
前記パッドから前記P型基板へ電位を供給するための第2配線と、
を含むことを特徴とする回路装置。 - 請求項3乃至5のいずれかにおいて、
前記CMOS構造のトランジスターのP型トランジスターは、
前記P型層上に形成されるN型ウェルと、前記N型ウェル上に形成されるP型ソース領域と、前記N型ウェル上に形成されるP型ドレイン領域と、により構成され、
前記CMOS構造のトランジスターのN型トランジスターは、
前記P型層上に形成されるP型ウェルと、前記P型ウェル上に形成されるN型ソース領域と、前記P型ウェル上に形成されるN型ドレイン領域と、により構成されることを特徴とする回路装置。 - 請求項1乃至6のいずれかにおいて、
前記DMOS構造のトランジスターのN型トランジスターは、
前記第1のN型埋め込み層上に形成されるディープN型ウェルと、
前記ディープN型ウェル上に形成されるP型層と、
前記P型層上に形成されるN型ソース領域と、
前記ディープN型ウェル上に形成されるN型ドレイン領域と、
を有することを特徴とする回路装置。 - 請求項1乃至7のいずれかにおいて、
前記DMOS構造のトランジスターのP型トランジスターは、
前記第1のN型埋め込み層上に形成されるディープN型ウェルと、
前記ディープN型ウェル上に形成されるP型層と、
前記ディープN型ウェル上に形成されるP型ソース領域と、
前記P型層上に形成されるP型ドレイン領域と、
を有することを特徴とする回路装置。 - 請求項1乃至8のいずれかにおいて、
前記第1の回路は、
モーターを駆動するためのチョッピング電流を出力するブリッジ回路を有し、
前記第2の回路は、
前記ブリッジ回路に流れる電流を検出する検出回路を有することを特徴とする回路装置。 - 請求項9において、
前記検出回路は、
基準電圧を生成する基準電圧生成回路と、
前記電流に基づく電圧と前記基準電圧とを比較する電圧検出回路と、
前記電圧検出回路の比較結果に基づいて前記ブリッジ回路を制御する制御回路と、
を有することを特徴とする回路装置。 - 請求項1乃至8のいずれかにおいて、
前記第2の回路は、
前記第1の回路を制御する回路又は、前記第1の回路の電圧又は電流を検出する回路を有することを特徴とする回路装置。 - 請求項1乃至8のいずれかにおいて、
前記第1の回路は、
出力電流又は出力電圧を繰り返しスイッチングする動作を行う回路であることを特徴とする回路装置。 - 請求項1乃至12のいずれかに記載された回路装置を含むことを特徴とする電子機器。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013041807A JP2014170831A (ja) | 2013-03-04 | 2013-03-04 | 回路装置及び電子機器 |
KR1020140022290A KR101589144B1 (ko) | 2013-03-04 | 2014-02-26 | 회로 장치 및 전자 기기 |
US14/191,893 US20140247001A1 (en) | 2013-03-04 | 2014-02-27 | Circuit device and electronic apparatus |
TW103106883A TWI573400B (zh) | 2013-03-04 | 2014-02-27 | 電路裝置及電子機器 |
CN201410076749.4A CN104038120B (zh) | 2013-03-04 | 2014-03-04 | 电路装置及电子设备 |
US16/361,846 US11037927B2 (en) | 2013-03-04 | 2019-03-22 | Circuit device and electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013041807A JP2014170831A (ja) | 2013-03-04 | 2013-03-04 | 回路装置及び電子機器 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017099109A Division JP2017139503A (ja) | 2017-05-18 | 2017-05-18 | 回路装置及び電子機器 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2014170831A true JP2014170831A (ja) | 2014-09-18 |
Family
ID=51420648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013041807A Withdrawn JP2014170831A (ja) | 2013-03-04 | 2013-03-04 | 回路装置及び電子機器 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20140247001A1 (ja) |
JP (1) | JP2014170831A (ja) |
KR (1) | KR101589144B1 (ja) |
CN (1) | CN104038120B (ja) |
TW (1) | TWI573400B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6089850B2 (ja) * | 2013-03-25 | 2017-03-08 | セイコーエプソン株式会社 | 回路装置及び電子機器 |
FR3041814A1 (fr) | 2015-09-30 | 2017-03-31 | Stmicroelectronics Rousset | Circuit integre securise |
DE102017003409B4 (de) | 2017-04-07 | 2023-08-10 | Schmidt + Clemens Gmbh + Co. Kg | Rohr und Vorrichtung zum thermischen Spalten von Kohlenwasserstoffen |
CN114582866A (zh) | 2020-11-30 | 2022-06-03 | 三星电子株式会社 | 半导体器件 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000077532A (ja) * | 1998-09-03 | 2000-03-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003142685A (ja) * | 2001-11-06 | 2003-05-16 | Nec Electronics Corp | 半導体装置 |
JP2006179864A (ja) * | 2004-12-21 | 2006-07-06 | Taiwan Semiconductor Manufacturing Co Ltd | 半導体デバイス |
JP2007523481A (ja) * | 2004-02-17 | 2007-08-16 | シリコン・スペース・テクノロジー・コーポレイション | 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法 |
US20080290410A1 (en) * | 2005-04-29 | 2008-11-27 | Chih-Feng Huang | Mosfet With Isolation Structure and Fabrication Method Thereof |
US20100032756A1 (en) * | 2008-08-07 | 2010-02-11 | Texas Instruments Incorporated | Buried floating layer structure for improved breakdown |
JP2010062564A (ja) * | 2008-09-02 | 2010-03-18 | Dongbu Hitek Co Ltd | ポリエミッタ型バイポーラトランジスタ、bcd素子、ポリエミッタ型バイポーラトランジスタの製造方法及びbcd素子の製造方法 |
JP2011160598A (ja) * | 2010-02-03 | 2011-08-18 | Rohm Co Ltd | 異常検知回路、負荷駆動装置、電気機器 |
WO2011161748A1 (ja) * | 2010-06-21 | 2011-12-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2012080117A (ja) * | 2002-08-14 | 2012-04-19 | Advanced Analogic Technologies Inc | エピレス基板における分離型の相補型mos装置 |
JP2012099749A (ja) * | 2010-11-05 | 2012-05-24 | On Semiconductor Trading Ltd | 半導体装置 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020043996A (ko) * | 2000-12-05 | 2002-06-14 | Korea Electronics Telecomm | 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 |
JP2003197792A (ja) * | 2001-12-28 | 2003-07-11 | Sanyo Electric Co Ltd | 半導体装置 |
US7834421B2 (en) | 2002-08-14 | 2010-11-16 | Advanced Analogic Technologies, Inc. | Isolated diode |
US7812403B2 (en) | 2002-08-14 | 2010-10-12 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuit devices |
US7902630B2 (en) | 2002-08-14 | 2011-03-08 | Advanced Analogic Technologies, Inc. | Isolated bipolar transistor |
US7741661B2 (en) | 2002-08-14 | 2010-06-22 | Advanced Analogic Technologies, Inc. | Isolation and termination structures for semiconductor die |
US7825488B2 (en) | 2006-05-31 | 2010-11-02 | Advanced Analogic Technologies, Inc. | Isolation structures for integrated circuits and modular methods of forming the same |
US6943426B2 (en) | 2002-08-14 | 2005-09-13 | Advanced Analogic Technologies, Inc. | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
US20080197408A1 (en) | 2002-08-14 | 2008-08-21 | Advanced Analogic Technologies, Inc. | Isolated quasi-vertical DMOS transistor |
US8089129B2 (en) | 2002-08-14 | 2012-01-03 | Advanced Analogic Technologies, Inc. | Isolated CMOS transistors |
US7939420B2 (en) | 2002-08-14 | 2011-05-10 | Advanced Analogic Technologies, Inc. | Processes for forming isolation structures for integrated circuit devices |
US7956391B2 (en) | 2002-08-14 | 2011-06-07 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US8513087B2 (en) | 2002-08-14 | 2013-08-20 | Advanced Analogic Technologies, Incorporated | Processes for forming isolation structures for integrated circuit devices |
US7667268B2 (en) | 2002-08-14 | 2010-02-23 | Advanced Analogic Technologies, Inc. | Isolated transistor |
US6855985B2 (en) * | 2002-09-29 | 2005-02-15 | Advanced Analogic Technologies, Inc. | Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology |
AU2003283750A1 (en) | 2002-12-10 | 2004-06-30 | Koninklijke Philips Electronics N.V. | Integrated half-bridge power circuit |
JP2005051694A (ja) * | 2003-07-31 | 2005-02-24 | Solid Acoustics Co Ltd | 12面体スピーカシステム |
JP4775684B2 (ja) * | 2003-09-29 | 2011-09-21 | オンセミコンダクター・トレーディング・リミテッド | 半導体集積回路装置 |
US7238986B2 (en) | 2004-05-03 | 2007-07-03 | Texas Instruments Incorporated | Robust DEMOS transistors and method for making the same |
US7427795B2 (en) * | 2004-06-30 | 2008-09-23 | Texas Instruments Incorporated | Drain-extended MOS transistors and methods for making the same |
EP1650862B1 (en) * | 2004-10-22 | 2019-08-07 | Dialog Semiconductor GmbH | System-on-chip for high voltage applications |
JP5063865B2 (ja) * | 2005-03-30 | 2012-10-31 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP5060750B2 (ja) | 2006-08-02 | 2012-10-31 | ローム株式会社 | モータ駆動回路およびそれを用いた電子機器 |
TWI352428B (en) * | 2006-11-17 | 2011-11-11 | Episil Technologies Inc | Semiconductor device and complementary metal oxide |
US7411271B1 (en) * | 2007-01-19 | 2008-08-12 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor field effect transistor |
US7514754B2 (en) * | 2007-01-19 | 2009-04-07 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem |
US8138570B2 (en) | 2007-03-28 | 2012-03-20 | Advanced Analogic Technologies, Inc. | Isolated junction field-effect transistor |
US7737526B2 (en) | 2007-03-28 | 2010-06-15 | Advanced Analogic Technologies, Inc. | Isolated trench MOSFET in epi-less semiconductor sustrate |
US8138049B2 (en) * | 2009-05-29 | 2012-03-20 | Silergy Technology | Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices |
US8530298B2 (en) * | 2011-11-01 | 2013-09-10 | Texas Instruments Incorporated | Radiation hardened integrated circuit |
KR101986090B1 (ko) * | 2012-04-06 | 2019-06-05 | 삼성전자 주식회사 | 가드링을 포함하는 반도체 장치 및 이를 포함하는 반도체 시스템 |
US9236472B2 (en) * | 2012-04-17 | 2016-01-12 | Freescale Semiconductor, Inc. | Semiconductor device with integrated breakdown protection |
-
2013
- 2013-03-04 JP JP2013041807A patent/JP2014170831A/ja not_active Withdrawn
-
2014
- 2014-02-26 KR KR1020140022290A patent/KR101589144B1/ko active IP Right Grant
- 2014-02-27 US US14/191,893 patent/US20140247001A1/en not_active Abandoned
- 2014-02-27 TW TW103106883A patent/TWI573400B/zh active
- 2014-03-04 CN CN201410076749.4A patent/CN104038120B/zh active Active
-
2019
- 2019-03-22 US US16/361,846 patent/US11037927B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000077532A (ja) * | 1998-09-03 | 2000-03-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2003142685A (ja) * | 2001-11-06 | 2003-05-16 | Nec Electronics Corp | 半導体装置 |
JP2012080117A (ja) * | 2002-08-14 | 2012-04-19 | Advanced Analogic Technologies Inc | エピレス基板における分離型の相補型mos装置 |
JP2007523481A (ja) * | 2004-02-17 | 2007-08-16 | シリコン・スペース・テクノロジー・コーポレイション | 埋め込みガードリング及び耐放射線性分離構造並びにその製造方法 |
JP2006179864A (ja) * | 2004-12-21 | 2006-07-06 | Taiwan Semiconductor Manufacturing Co Ltd | 半導体デバイス |
US20080290410A1 (en) * | 2005-04-29 | 2008-11-27 | Chih-Feng Huang | Mosfet With Isolation Structure and Fabrication Method Thereof |
US20100032756A1 (en) * | 2008-08-07 | 2010-02-11 | Texas Instruments Incorporated | Buried floating layer structure for improved breakdown |
JP2010062564A (ja) * | 2008-09-02 | 2010-03-18 | Dongbu Hitek Co Ltd | ポリエミッタ型バイポーラトランジスタ、bcd素子、ポリエミッタ型バイポーラトランジスタの製造方法及びbcd素子の製造方法 |
JP2011160598A (ja) * | 2010-02-03 | 2011-08-18 | Rohm Co Ltd | 異常検知回路、負荷駆動装置、電気機器 |
WO2011161748A1 (ja) * | 2010-06-21 | 2011-12-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2012099749A (ja) * | 2010-11-05 | 2012-05-24 | On Semiconductor Trading Ltd | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104038120B (zh) | 2018-04-27 |
CN104038120A (zh) | 2014-09-10 |
US20190221566A1 (en) | 2019-07-18 |
TWI573400B (zh) | 2017-03-01 |
KR20140110734A (ko) | 2014-09-17 |
US11037927B2 (en) | 2021-06-15 |
US20140247001A1 (en) | 2014-09-04 |
TW201440439A (zh) | 2014-10-16 |
KR101589144B1 (ko) | 2016-01-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11037927B2 (en) | Circuit device and electronic apparatus | |
US10326444B2 (en) | Integrated circuit device and electronic appliance | |
KR101548171B1 (ko) | 회로 장치 및 전자 기기 | |
US10714465B2 (en) | Motor drive circuit, semiconductor apparatus, and electronic device | |
JP6326853B2 (ja) | 回路装置及び電子機器 | |
JP4775684B2 (ja) | 半導体集積回路装置 | |
CN107275326B (zh) | 半导体装置和液体排出头基板 | |
JP6089850B2 (ja) | 回路装置及び電子機器 | |
JP2017139503A (ja) | 回路装置及び電子機器 | |
JP4755405B2 (ja) | 半導体装置 | |
JP6269797B2 (ja) | 回路装置及び電子機器 | |
JP5404678B2 (ja) | 電源制御装置 | |
JP7010100B2 (ja) | モーター駆動回路、半導体装置、及び、電子機器 | |
JP2008288476A (ja) | 高耐圧ic | |
JP4775683B2 (ja) | 半導体集積回路装置 | |
JP2010177561A (ja) | 半導体装置 | |
JP6343052B2 (ja) | 半導体装置 | |
JP2022138607A (ja) | 基板、記録装置及び製造方法 | |
JP2004241562A (ja) | 静電気保護用半導体装置および半導体装置 | |
JP2004241563A (ja) | 静電気保護用半導体装置および半導体装置 | |
JP2009032822A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160219 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161124 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161129 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170221 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20170519 |