KR20020043996A - 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 - Google Patents

횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 Download PDF

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Publication number
KR20020043996A
KR20020043996A KR1020000073473A KR20000073473A KR20020043996A KR 20020043996 A KR20020043996 A KR 20020043996A KR 1020000073473 A KR1020000073473 A KR 1020000073473A KR 20000073473 A KR20000073473 A KR 20000073473A KR 20020043996 A KR20020043996 A KR 20020043996A
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KR
South Korea
Prior art keywords
oxide layer
grown
layer
trench gate
type
Prior art date
Application number
KR1020000073473A
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English (en)
Inventor
구진근
노태문
이대우
김상기
김종대
Original Assignee
Korea Electronics Telecomm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Korea Electronics Telecomm filed Critical Korea Electronics Telecomm
Priority to KR1020000073473A priority Critical patent/KR20020043996A/ko
Publication of KR20020043996A publication Critical patent/KR20020043996A/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232Field-effect technology
    • H01L21/8234MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/66704Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020000073473A 2000-12-05 2000-12-05 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 KR20020043996A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020000073473A KR20020043996A (ko) 2000-12-05 2000-12-05 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000073473A KR20020043996A (ko) 2000-12-05 2000-12-05 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법

Publications (1)

Publication Number Publication Date
KR20020043996A true KR20020043996A (ko) 2002-06-14

Family

ID=27679742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000073473A KR20020043996A (ko) 2000-12-05 2000-12-05 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법

Country Status (1)

Country Link
KR (1) KR20020043996A (ko)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448889B1 (ko) * 2002-11-22 2004-09-18 한국전자통신연구원 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법
CN1321464C (zh) * 2003-02-14 2007-06-13 三洋电机株式会社 半导体器件及其制造方法
KR100776142B1 (ko) * 2006-12-27 2007-11-15 동부일렉트로닉스 주식회사 반도체 소자
KR100840667B1 (ko) * 2007-06-26 2008-06-24 주식회사 동부하이텍 수평형 디모스 소자 및 그 제조방법
KR100840958B1 (ko) * 2006-06-15 2008-06-24 가부시키가이샤 리코 승압형 dc-dc 컨버터용 반도체 장치 및 승압형dc-dc 컨버터
KR100974697B1 (ko) * 2008-07-09 2010-08-06 주식회사 동부하이텍 Ldmos 소자 및 ldmos 소자의 제조 방법
WO2011126761A2 (en) * 2010-03-30 2011-10-13 Volterra Semiconductor Corporation Two step poly etch ldmos gate formation
KR20140110734A (ko) * 2013-03-04 2014-09-17 세이코 엡슨 가부시키가이샤 회로 장치 및 전자 기기

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448889B1 (ko) * 2002-11-22 2004-09-18 한국전자통신연구원 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법
CN1321464C (zh) * 2003-02-14 2007-06-13 三洋电机株式会社 半导体器件及其制造方法
KR100840958B1 (ko) * 2006-06-15 2008-06-24 가부시키가이샤 리코 승압형 dc-dc 컨버터용 반도체 장치 및 승압형dc-dc 컨버터
KR100776142B1 (ko) * 2006-12-27 2007-11-15 동부일렉트로닉스 주식회사 반도체 소자
KR100840667B1 (ko) * 2007-06-26 2008-06-24 주식회사 동부하이텍 수평형 디모스 소자 및 그 제조방법
KR100974697B1 (ko) * 2008-07-09 2010-08-06 주식회사 동부하이텍 Ldmos 소자 및 ldmos 소자의 제조 방법
WO2011126761A2 (en) * 2010-03-30 2011-10-13 Volterra Semiconductor Corporation Two step poly etch ldmos gate formation
WO2011126761A3 (en) * 2010-03-30 2012-01-19 Volterra Semiconductor Corporation Two step poly etch ldmos gate formation
US8598000B2 (en) 2010-03-30 2013-12-03 Volterra Semiconductor Corporation Two step poly etch LDMOS gate formation
US8785282B2 (en) 2010-03-30 2014-07-22 Volterra Semiconductor Corporation Two step poly etch LDMOS gate formation
KR20140110734A (ko) * 2013-03-04 2014-09-17 세이코 엡슨 가부시키가이샤 회로 장치 및 전자 기기

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