KR20020043996A - 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 - Google Patents
횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 Download PDFInfo
- Publication number
- KR20020043996A KR20020043996A KR1020000073473A KR20000073473A KR20020043996A KR 20020043996 A KR20020043996 A KR 20020043996A KR 1020000073473 A KR1020000073473 A KR 1020000073473A KR 20000073473 A KR20000073473 A KR 20000073473A KR 20020043996 A KR20020043996 A KR 20020043996A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide layer
- grown
- layer
- trench gate
- type
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- -1 Phosphorous ions Chemical class 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66704—Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000073473A KR20020043996A (ko) | 2000-12-05 | 2000-12-05 | 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000073473A KR20020043996A (ko) | 2000-12-05 | 2000-12-05 | 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20020043996A true KR20020043996A (ko) | 2002-06-14 |
Family
ID=27679742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000073473A KR20020043996A (ko) | 2000-12-05 | 2000-12-05 | 횡형 트렌치 게이트 디모스 전력소자를 갖는 대전류용전력집적회로 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20020043996A (ko) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100448889B1 (ko) * | 2002-11-22 | 2004-09-18 | 한국전자통신연구원 | 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법 |
CN1321464C (zh) * | 2003-02-14 | 2007-06-13 | 三洋电机株式会社 | 半导体器件及其制造方法 |
KR100776142B1 (ko) * | 2006-12-27 | 2007-11-15 | 동부일렉트로닉스 주식회사 | 반도체 소자 |
KR100840667B1 (ko) * | 2007-06-26 | 2008-06-24 | 주식회사 동부하이텍 | 수평형 디모스 소자 및 그 제조방법 |
KR100840958B1 (ko) * | 2006-06-15 | 2008-06-24 | 가부시키가이샤 리코 | 승압형 dc-dc 컨버터용 반도체 장치 및 승압형dc-dc 컨버터 |
KR100974697B1 (ko) * | 2008-07-09 | 2010-08-06 | 주식회사 동부하이텍 | Ldmos 소자 및 ldmos 소자의 제조 방법 |
WO2011126761A2 (en) * | 2010-03-30 | 2011-10-13 | Volterra Semiconductor Corporation | Two step poly etch ldmos gate formation |
KR20140110734A (ko) * | 2013-03-04 | 2014-09-17 | 세이코 엡슨 가부시키가이샤 | 회로 장치 및 전자 기기 |
-
2000
- 2000-12-05 KR KR1020000073473A patent/KR20020043996A/ko not_active IP Right Cessation
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100448889B1 (ko) * | 2002-11-22 | 2004-09-18 | 한국전자통신연구원 | 에스오아이 기판을 이용한 전력 집적회로용 소자의 제조방법 |
CN1321464C (zh) * | 2003-02-14 | 2007-06-13 | 三洋电机株式会社 | 半导体器件及其制造方法 |
KR100840958B1 (ko) * | 2006-06-15 | 2008-06-24 | 가부시키가이샤 리코 | 승압형 dc-dc 컨버터용 반도체 장치 및 승압형dc-dc 컨버터 |
KR100776142B1 (ko) * | 2006-12-27 | 2007-11-15 | 동부일렉트로닉스 주식회사 | 반도체 소자 |
KR100840667B1 (ko) * | 2007-06-26 | 2008-06-24 | 주식회사 동부하이텍 | 수평형 디모스 소자 및 그 제조방법 |
KR100974697B1 (ko) * | 2008-07-09 | 2010-08-06 | 주식회사 동부하이텍 | Ldmos 소자 및 ldmos 소자의 제조 방법 |
WO2011126761A2 (en) * | 2010-03-30 | 2011-10-13 | Volterra Semiconductor Corporation | Two step poly etch ldmos gate formation |
WO2011126761A3 (en) * | 2010-03-30 | 2012-01-19 | Volterra Semiconductor Corporation | Two step poly etch ldmos gate formation |
US8598000B2 (en) | 2010-03-30 | 2013-12-03 | Volterra Semiconductor Corporation | Two step poly etch LDMOS gate formation |
US8785282B2 (en) | 2010-03-30 | 2014-07-22 | Volterra Semiconductor Corporation | Two step poly etch LDMOS gate formation |
KR20140110734A (ko) * | 2013-03-04 | 2014-09-17 | 세이코 엡슨 가부시키가이샤 | 회로 장치 및 전자 기기 |
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