JP5063865B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5063865B2 JP5063865B2 JP2005098967A JP2005098967A JP5063865B2 JP 5063865 B2 JP5063865 B2 JP 5063865B2 JP 2005098967 A JP2005098967 A JP 2005098967A JP 2005098967 A JP2005098967 A JP 2005098967A JP 5063865 B2 JP5063865 B2 JP 5063865B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- type
- region
- drain
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 238000009792 diffusion process Methods 0.000 claims description 128
- 239000000758 substrate Substances 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 238000002955 isolation Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20009—Modifications to facilitate cooling, ventilating, or heating using a gaseous coolant in electronic enclosures
- H05K7/20136—Forced ventilation, e.g. by fans
- H05K7/20172—Fan mounting or fan specifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/20—Cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0882—Disposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0856—Source regions
- H01L29/086—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Theoretical Computer Science (AREA)
- Thermal Sciences (AREA)
- Human Computer Interaction (AREA)
- General Engineering & Computer Science (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
2 N型のエピタキシャル層
3 P型の分離領域
4 N型の埋込拡散層
5 P型の拡散層
8 N型の拡散層
10 ゲート電極
Claims (4)
- 一導電型の半導体基板と、
前記半導体基板上に積層された逆導電型のエピタキシャル層と、
前記エピタキシャル層上面に形成されたゲート酸化膜及びゲート電極と、
前記半導体基板と前記エピタキシャル層とに形成された逆導電型の埋込拡散層と、
前記エピタキシャル層に形成され、前記埋込拡散層と底部で重畳した一導電型のバックゲート拡散層と、
一部が前記バックゲート拡散層と重畳し、その他の領域が前記エピタキシャル層に形成され、且つ前記重畳領域が、逆導電型の拡散領域となる逆導電型のドレイン拡散層と、
前記バックゲート拡散層に形成された逆導電型のソース拡散層と、
前記ドレイン拡散層と接続するドレイン電極と、
前記ソース拡散層と接続するソース電極と、を有し、
前記バックゲート拡散層は、前記ゲート電極の一端側の端部よりも前記ドレイン拡散層側まで形成され、前記重畳領域は、前記ゲート電極の一端側の端部よりも前記ドレイン拡散層側まで配置され、
前記重畳領域は、前記ゲート電極の一端側の端部下方に配置されるように、前記ゲート電極下方まで配置されることを特徴とする半導体装置。 - 前記重畳領域の逆導電型の不純物濃度は、前記ソース拡散層側の方が前記ドレイン拡散層側よりも低いことを特徴とする請求項1に記載の半導体装置。
- 前記ドレイン拡散層は、前記バックゲート拡散層を囲むように一環状に形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記ドレイン拡散層には、一環状にドレインコンタクト拡散層が形成されていることを特徴とする請求項2に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005098967A JP5063865B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置 |
CNB2006100714793A CN100468775C (zh) | 2005-03-30 | 2006-03-24 | 半导体装置 |
KR1020060026754A KR100764298B1 (ko) | 2005-03-30 | 2006-03-24 | 반도체 장치 |
US11/391,163 US7279745B2 (en) | 2005-03-30 | 2006-03-27 | Semiconductor device |
TW095110896A TWI298950B (en) | 2005-03-30 | 2006-03-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005098967A JP5063865B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006278931A JP2006278931A (ja) | 2006-10-12 |
JP5063865B2 true JP5063865B2 (ja) | 2012-10-31 |
Family
ID=37030690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005098967A Expired - Fee Related JP5063865B2 (ja) | 2005-03-30 | 2005-03-30 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7279745B2 (ja) |
JP (1) | JP5063865B2 (ja) |
KR (1) | KR100764298B1 (ja) |
CN (1) | CN100468775C (ja) |
TW (1) | TWI298950B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008010627A (ja) * | 2006-06-29 | 2008-01-17 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
US7932580B2 (en) * | 2006-12-21 | 2011-04-26 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
TWI413254B (zh) * | 2007-05-23 | 2013-10-21 | Fairchild Semiconductor | 用於積體電路應用的低導通電阻金氧半導體電晶體 |
US8217419B2 (en) * | 2007-06-15 | 2012-07-10 | Rohm Co., Ltd. | Semiconductor device |
US20100171175A1 (en) * | 2009-01-05 | 2010-07-08 | Fan bing-yao | Structure For High Voltage/High Current MOS Circuits |
JP5525736B2 (ja) * | 2009-02-18 | 2014-06-18 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
KR101025795B1 (ko) * | 2009-12-30 | 2011-04-04 | 안현구 | 전하 릴레이 인핸서 및 인핸서를 구비한 태양전지 시스템 |
KR101734936B1 (ko) | 2010-08-27 | 2017-05-15 | 삼성전자주식회사 | 소자분리 막 아래에 저 저항 영역을 갖는 반도체 소자 |
US8962397B2 (en) * | 2011-07-25 | 2015-02-24 | Microchip Technology Incorporated | Multiple well drain engineering for HV MOS devices |
US9576949B2 (en) * | 2012-09-05 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode formed of PMOSFET and schottky diodes |
JP2014170831A (ja) * | 2013-03-04 | 2014-09-18 | Seiko Epson Corp | 回路装置及び電子機器 |
CN104658913B (zh) * | 2015-02-10 | 2017-12-05 | 上海华虹宏力半导体制造有限公司 | Nldmos的制造方法 |
TWI674678B (zh) * | 2015-12-07 | 2019-10-11 | 聯華電子股份有限公司 | 二極體結構 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5191401A (en) * | 1989-03-10 | 1993-03-02 | Kabushiki Kaisha Toshiba | MOS transistor with high breakdown voltage |
JP3305415B2 (ja) * | 1992-06-18 | 2002-07-22 | キヤノン株式会社 | 半導体装置、インクジェットヘッド、および画像形成装置 |
US5559044A (en) * | 1992-09-21 | 1996-09-24 | Siliconix Incorporated | BiCDMOS process technology |
JPH06334136A (ja) * | 1993-05-20 | 1994-12-02 | Sharp Corp | 半導体装置およびその製造方法 |
US5585294A (en) * | 1994-10-14 | 1996-12-17 | Texas Instruments Incorporated | Method of fabricating lateral double diffused MOS (LDMOS) transistors |
JPH1050985A (ja) * | 1996-07-31 | 1998-02-20 | Denso Corp | Mis構造を有する半導体装置 |
TW417307B (en) * | 1998-09-23 | 2001-01-01 | Koninkl Philips Electronics Nv | Semiconductor device |
JP4488660B2 (ja) * | 2000-09-11 | 2010-06-23 | 株式会社東芝 | Mos電界効果トランジスタ |
JP3621667B2 (ja) | 2001-09-18 | 2005-02-16 | 株式会社東芝 | 半導体装置及びその実装方法 |
JP2002246477A (ja) * | 2001-02-20 | 2002-08-30 | Sony Corp | 半導体装置及びその製造方法 |
JP2002314065A (ja) | 2001-04-13 | 2002-10-25 | Sanyo Electric Co Ltd | Mos半導体装置およびその製造方法 |
JP2003197791A (ja) * | 2001-12-28 | 2003-07-11 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2003234423A (ja) * | 2002-02-07 | 2003-08-22 | Sony Corp | 半導体装置及びその製造方法 |
US6753575B2 (en) | 2002-06-11 | 2004-06-22 | Texas Instruments Incorporated | Tank-isolated-drain-extended power device |
JP4014548B2 (ja) * | 2003-09-17 | 2007-11-28 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
JP4098208B2 (ja) | 2003-10-01 | 2008-06-11 | 東芝マイクロエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4927340B2 (ja) * | 2005-02-24 | 2012-05-09 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
-
2005
- 2005-03-30 JP JP2005098967A patent/JP5063865B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-24 CN CNB2006100714793A patent/CN100468775C/zh active Active
- 2006-03-24 KR KR1020060026754A patent/KR100764298B1/ko not_active IP Right Cessation
- 2006-03-27 US US11/391,163 patent/US7279745B2/en active Active
- 2006-03-29 TW TW095110896A patent/TWI298950B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200701461A (en) | 2007-01-01 |
US7279745B2 (en) | 2007-10-09 |
CN100468775C (zh) | 2009-03-11 |
KR20060106699A (ko) | 2006-10-12 |
TWI298950B (en) | 2008-07-11 |
US20060220115A1 (en) | 2006-10-05 |
JP2006278931A (ja) | 2006-10-12 |
KR100764298B1 (ko) | 2007-10-05 |
CN1841777A (zh) | 2006-10-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5063865B2 (ja) | 半導体装置 | |
JP5499915B2 (ja) | 高耐圧半導体装置 | |
KR100491914B1 (ko) | 반도체 장치 | |
US6927442B2 (en) | Charge pump device | |
KR100491916B1 (ko) | 반도체 장치 및 그 제조 방법 | |
KR100500336B1 (ko) | 차지 펌프 장치 | |
CN109585557B (zh) | 半导体器件及其制造方法 | |
KR100491915B1 (ko) | 차지 펌프 장치 | |
US9608072B2 (en) | Semiconductor device | |
US10332993B2 (en) | Semiconductor device and method for manufacturing the same | |
JP3761518B2 (ja) | チャージポンプ装置 | |
CN112436005B (zh) | 半导体装置 | |
US20230029591A1 (en) | Electronic device and charge pump circuit | |
US20110121803A1 (en) | Semiconductor device and dc-dc converter |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080218 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100416 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111031 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120327 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120625 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120710 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120808 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5063865 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150817 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150817 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150817 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150817 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150817 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |