JP2007311809A - フラットパネルディスプレイ装置及びその製造方法 - Google Patents
フラットパネルディスプレイ装置及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 163
- 239000002184 metal Substances 0.000 claims abstract description 163
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 88
- 239000004065 semiconductor Substances 0.000 claims description 61
- 239000011229 interlayer Substances 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 18
- 239000003870 refractory metal Substances 0.000 claims description 14
- 230000002265 prevention Effects 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 11
- 239000011733 molybdenum Substances 0.000 claims description 11
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000000788 chromium alloy Substances 0.000 claims description 4
- 229910001080 W alloy Inorganic materials 0.000 claims description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims 2
- 229910016570 AlCu Inorganic materials 0.000 claims 1
- -1 AlNd Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 265
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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Abstract
【解決手段】フラットパネルディスプレイ装置は、基板100と,該基板100上に順次積層された耐熱性金属膜パターン131a,アルミニウム系金属膜パターン131c,およびキャッピング金属膜パターン131dを備えるソース/ドレイン電極131と,を含み,耐熱性金属膜パターン131aは,500Å以下の厚さを有し,耐熱性金属膜パターン131aとアルミニウム系金属膜パターン131cとの間には,拡散防止膜パターン131bがさらに含まれる
【選択図】図3D
Description
110 半導体層
130c アルミニウム系金属膜
130d キャッピング金属膜
131 ソース/ドレイン電極
131a 耐熱性金属膜パターン(又は耐熱性金属膜)
131b 拡散防止膜パターン
131c アルミニウム系金属膜パターン
131d キャッピング金属膜パターン
Claims (13)
- 基板と;
該基板上に順次積層された耐熱性金属膜パターン,アルミニウム系金属膜パターン,およびキャッピング金属膜パターンを備えるソース/ドレイン電極と;
を含み、
前記耐熱性金属膜パターンは,500Å以下の厚さを有し,
前記耐熱性金属膜パターンと前記アルミニウム系金属膜パターンとの間には,拡散防止膜パターンがさらに含まれることを特徴とする,フラットパネルディスプレイ装置。 - 前記耐熱性金属膜パターンが,クロム,クロム合金,モリブデン,およびモリブデン合金からなる群より少なくとも一つ選択された金属から構成されることを特徴とする,請求項1記載のフラットパネルディスプレイ装置。
- 前記耐熱性金属膜パターンは,モリブデン−タングステン合金から構成されることを特徴とする,請求項2記載のフラットパネルディスプレイ装置。
- 前記アルミニウム系金属膜パターンは,Al,AlSi,AlNd,およびAlCuからなる群より少なくとも一つ選択された金属から構成されることを特徴とする,請求項1記載のフラットパネルディスプレイ装置。
- 前記アルミニウム系金属膜パターンは,AlSiから構成されることを特徴とする,請求項4記載のフラットパネルディスプレイ装置。
- 前記キャッピング金属膜パターンは,Ti又はTaから構成されることを特徴とする,請求項1記載のフラットパネルディスプレイ装置。
- 前記拡散防止膜パターンは,Ti又はTaから構成されることを特徴とする,請求項1記載のフラットパネルディスプレイ装置。
- 前記基板上に設けられる半導体層と;
前記半導体層上に設けられるゲート電極と;
前記ゲート電極及び前記半導体層上に設けられ,前記半導体層の両側端部を露出させるソース/ドレインコンタクトホールを備える層間絶縁膜とをさらに含み,
前記耐熱性金属膜パターン,前記アルミニウム系金属膜パターン,および前記キャッピング金属膜パターンは,前記露出した半導体層上に位置することを特徴とする,請求項1記載のフラットパネルディスプレイ装置。 - 前記半導体層は,多結晶シリコン膜であることを特徴とする,請求項1記載のフラットパネルディスプレイ装置。
- 基板を配置し;
前記基板上に半導体層を形成し;
前記半導体層上にゲート電極を形成し;
前記ゲート電極及び前記半導体層上を覆う層間絶縁膜を形成し;
前記層間絶縁膜内に,前記半導体層の両側端部を露出させるソース/ドレインコンタクトホールを形成し;
前記半導体層上に設けられ,前記ソース/ドレインコンタクトホールを介して前記半導体層の両側端部に接するように,厚さが500Å以下の耐熱性金属膜パターンを積層し,さらに,拡散防止膜パターン,アルミニウム系金属膜パターン及びキャッピング金属膜パターンを順次積層することで少なくとも構成されるソース/ドレイン電極を形成することを含むことを特徴とするフラットパネルディスプレイ装置の製造方法。 - 前記ソース/ドレイン電極を形成することは,
前記ソース/ドレインコンタクトホールを介して露出した前記半導体層を含んだ基板の全面に耐熱性金属膜,拡散防止膜,アルミニウム系金属膜,およびキャッピング金属膜を順次積層し;
前記キャッピング金属膜,前記アルミニウム系金属膜,前記拡散防止膜,および前記耐熱性金属膜を順次パターニングすることで,前記耐熱性金属膜パターン,前記拡散防止膜パターン,前記アルミニウム系金属膜パターン,および前記キャッピング金属膜パターンを形成することを含むことを特徴とする,請求項10記載のフラットパネルディスプレイ装置の製造方法。 - 前記拡散防止膜を積層する前に,前記耐熱性金属膜の形成された基板を熱処理することをさらに含むことを特徴とする,請求項11記載のフラットパネルディスプレイ装置の製造方法。
- 前記基板を熱処理する前に,前記耐熱性金属膜上にパッシベーション絶縁膜を積層し,前記熱処理後,前記拡散防止膜を積層する前に,前記パッシベーション絶縁膜を除去することをさらに含むことを特徴とする,請求項12記載のフラットパネルディスプレイ装置の製造方法。
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KR100626008B1 (ko) * | 2004-06-30 | 2006-09-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 및 이를 구비한 평판표시장치 |
WO2007011061A1 (en) | 2005-07-22 | 2007-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR100667087B1 (ko) | 2005-09-30 | 2007-01-11 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
TWI267213B (en) * | 2006-01-27 | 2006-11-21 | Ind Tech Res Inst | Organic light emitting device with integrated color filter and method of manufacturing the same |
WO2007101120A1 (en) * | 2006-02-23 | 2007-09-07 | Acorn Technologies, Inc. | Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s) |
JP4713433B2 (ja) * | 2006-05-15 | 2011-06-29 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ |
KR101198218B1 (ko) * | 2006-06-19 | 2012-11-07 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조 방법 |
KR100875432B1 (ko) | 2007-05-31 | 2008-12-22 | 삼성모바일디스플레이주식회사 | 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치 |
KR100889626B1 (ko) | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
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JP4886600B2 (ja) | 2012-02-29 |
ATE434269T1 (de) | 2009-07-15 |
US20050133793A1 (en) | 2005-06-23 |
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US7294924B2 (en) | 2007-11-13 |
KR20050063412A (ko) | 2005-06-28 |
KR100623247B1 (ko) | 2006-09-18 |
CN1637566A (zh) | 2005-07-13 |
EP1548838A1 (en) | 2005-06-29 |
CN1637566B (zh) | 2010-05-05 |
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DE602004021553D1 (de) | 2009-07-30 |
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