DE602004021553D1 - Herstellungsverfahren für Source/Drain Elektrode für Flachbildschirm - Google Patents

Herstellungsverfahren für Source/Drain Elektrode für Flachbildschirm

Info

Publication number
DE602004021553D1
DE602004021553D1 DE602004021553T DE602004021553T DE602004021553D1 DE 602004021553 D1 DE602004021553 D1 DE 602004021553D1 DE 602004021553 T DE602004021553 T DE 602004021553T DE 602004021553 T DE602004021553 T DE 602004021553T DE 602004021553 D1 DE602004021553 D1 DE 602004021553D1
Authority
DE
Germany
Prior art keywords
source
manufacturing process
drain electrode
metal layer
flat screen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004021553T
Other languages
English (en)
Inventor
Tae Sung Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Mobile Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Mobile Display Co Ltd filed Critical Samsung Mobile Display Co Ltd
Publication of DE602004021553D1 publication Critical patent/DE602004021553D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE602004021553T 2003-12-22 2004-12-14 Herstellungsverfahren für Source/Drain Elektrode für Flachbildschirm Active DE602004021553D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030094815A KR100623247B1 (ko) 2003-12-22 2003-12-22 평판표시장치 및 그의 제조방법

Publications (1)

Publication Number Publication Date
DE602004021553D1 true DE602004021553D1 (de) 2009-07-30

Family

ID=34545889

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004021553T Active DE602004021553D1 (de) 2003-12-22 2004-12-14 Herstellungsverfahren für Source/Drain Elektrode für Flachbildschirm

Country Status (7)

Country Link
US (1) US7294924B2 (de)
EP (1) EP1548838B1 (de)
JP (2) JP2005181973A (de)
KR (1) KR100623247B1 (de)
CN (1) CN1637566B (de)
AT (1) ATE434269T1 (de)
DE (1) DE602004021553D1 (de)

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KR100626008B1 (ko) * 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터, 및 이를 구비한 평판표시장치
WO2007011061A1 (en) 2005-07-22 2007-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100667087B1 (ko) 2005-09-30 2007-01-11 삼성에스디아이 주식회사 박막 트랜지스터 및 그의 제조방법
TWI267213B (en) * 2006-01-27 2006-11-21 Ind Tech Res Inst Organic light emitting device with integrated color filter and method of manufacturing the same
WO2007101120A1 (en) * 2006-02-23 2007-09-07 Acorn Technologies, Inc. Method for making semiconductor insulated-gate field-effect transistor having multilayer deposited metal source (s) and/or drain (s)
JP4713433B2 (ja) * 2006-05-15 2011-06-29 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ
KR101198218B1 (ko) * 2006-06-19 2012-11-07 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조 방법
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) * 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100965260B1 (ko) * 2008-01-25 2010-06-22 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101147428B1 (ko) * 2009-02-09 2012-05-23 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5604855B2 (ja) * 2009-11-17 2014-10-15 富士通株式会社 半導体装置及びその製造方法
KR101056431B1 (ko) * 2010-06-04 2011-08-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 이를 구비한 표시 장치 및 그 제조 방법
JP5527225B2 (ja) * 2011-01-14 2014-06-18 ソニー株式会社 薄膜トランジスタおよび表示装置
JP2012252829A (ja) * 2011-06-01 2012-12-20 Seiko Epson Corp 発光装置の製造方法
JP2013080159A (ja) * 2011-10-05 2013-05-02 Japan Display East Co Ltd 液晶表示装置およびその製造方法
KR101957524B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR101957525B1 (ko) * 2012-12-31 2019-06-19 동우 화인켐 주식회사 포토레지스트 박리액 조성물
KR102322763B1 (ko) * 2014-12-19 2021-11-08 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
KR102396299B1 (ko) * 2015-07-06 2022-05-11 삼성디스플레이 주식회사 유기 발광 표시 장치
KR101916936B1 (ko) * 2016-12-01 2018-11-08 현대오트론 주식회사 전력 반도체 소자의 제조방법
CN107393828A (zh) * 2017-07-12 2017-11-24 武汉华星光电技术有限公司 薄膜晶体管的制作方法及薄膜晶体管
CN107221610B (zh) * 2017-07-25 2019-03-12 南京迈智芯微光电科技有限公司 一种提高性能的硅基有机发光器件及其制造方法
CN115589718A (zh) * 2021-07-05 2023-01-10 长鑫存储技术有限公司 半导体结构及其制备方法

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JP4316896B2 (ja) * 2003-01-09 2009-08-19 株式会社 日立ディスプレイズ 表示装置とその製造方法

Also Published As

Publication number Publication date
ATE434269T1 (de) 2009-07-15
US7294924B2 (en) 2007-11-13
JP2007311809A (ja) 2007-11-29
CN1637566B (zh) 2010-05-05
US20050133793A1 (en) 2005-06-23
KR100623247B1 (ko) 2006-09-18
EP1548838B1 (de) 2009-06-17
JP2005181973A (ja) 2005-07-07
EP1548838A1 (de) 2005-06-29
KR20050063412A (ko) 2005-06-28
CN1637566A (zh) 2005-07-13
JP4886600B2 (ja) 2012-02-29

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