CN107393828A - 薄膜晶体管的制作方法及薄膜晶体管 - Google Patents

薄膜晶体管的制作方法及薄膜晶体管 Download PDF

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CN107393828A
CN107393828A CN201710565553.5A CN201710565553A CN107393828A CN 107393828 A CN107393828 A CN 107393828A CN 201710565553 A CN201710565553 A CN 201710565553A CN 107393828 A CN107393828 A CN 107393828A
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layer
electrode
tft
thin film
film transistor
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李松杉
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/565,498 priority patent/US10818704B2/en
Priority to PCT/CN2017/095744 priority patent/WO2019010737A1/zh
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Abstract

本发明涉及液晶显示器技术领域，具体涉及一种薄膜晶体管的制作方法及薄膜晶体管，该发法包括：在玻璃基板上依次制作缓冲层、有源层、栅极绝缘层和栅极层并图形化处理；在缓冲层、有源层和栅极层上制作介电层并图形化处理；在介电层上制作源极和漏极，使源极和漏极与有源层相接触，对源极和漏极图形化处理；在介电层、源极和漏极上依次制作钝化层和有机光阻层，并对有机光阻层图形化处理；以有机光阻层为模具对钝化层干法刻蚀得到钝化层的孔；通过钝化层的孔制作有机发光器件。可以省掉一块模具，工艺简单，节省制造成本，而且显影液不会直接接触到由于钝化层过蚀刻造成的源漏极电极露出的铝，从而可以达到改善产品的特性的目的。

Description

薄膜晶体管的制作方法及薄膜晶体管
技术领域
本发明涉及液晶显示器技术领域，尤其涉及薄膜晶体管的制作方法及薄膜晶体管。
背景技术
氧化物半导体由于电子迁移率高，漏电流低，制备温度低等特点，引起了广泛的关注。传统的顶栅自对准结构在完成源漏极电极后，制作钝化层和有机绝缘膜需要使用两道模具加工完成，工艺复杂，制造成本高。由于钝化层成膜的均一性和干燥侵蚀的均一性，源漏极电极的顶膜容易被侵蚀掉露出铝，在有机绝缘膜的黄光工艺(photo)中，碱性的显影液甲基氢氧化氨(TMAH)会腐蚀铝，从而造成铟锡氧化物阳极和源漏极电极的表面接触不良，最终会影响产品特性。
发明内容
针对上述问题中存在的不足之处，本发明提供一种薄膜晶体管的制作方法及薄膜晶体管。
为实现上述目的，本发明提供一种薄膜晶体管的制作方法，该方法包括：在基板上依次制作缓冲层、有源层、栅极绝缘层和栅极层并图形化处理；
在所述缓冲层、有源层和栅极绝缘层上制作介电层并图形化处理；
在所述介电层上制作源极和漏极，使所述源极和漏极穿过所述介电层与所述有源层相接触，对所述源漏极电极进行图形化处理；
在所述介电层、源极和漏极上制作钝化层，在所述钝化层上制作有机光阻层，并对所述有机光阻层进行图形化处理；
以所述有机光阻层为模具对所述钝化层进行干法刻蚀处理从而得到所述钝化层的孔；
通过得到的所述钝化层的孔制作有机发光器件。
上述的薄膜晶体管的制作方法，使用光刻工艺对所述缓冲层、有源层、栅极绝缘层和栅极层进行图形化处理。
上述的薄膜晶体管的制作方法，对所述源极及漏极与所述有源层的接触区域进行等离子体导体化处理。
上述的薄膜晶体管的制作方法，所述等离子体为电离的氮气或氩气或氦气或氨气。
上述的薄膜晶体管的制作方法，使用等离子体增强化学气相沉积法沉积所述钝化层。
上述的薄膜晶体管的制作方法，通过得到的所述钝化层的孔完成对有机发光器件的制作的具体步骤为：
在所述有机光阻层上制作铟锡氧化物电极，使所述铟锡氧化物电极穿过所述钝化层的孔与所述源极或漏极相接触，对所述铟锡氧化物电极图形化处理；
在所述有机光阻层和铟锡氧化物电极上制作像素定义层并图形化处理；
在所述铟锡氧化物电极上蒸镀有机发光材料以形成有机发光器件。
上述的薄膜晶体管的制作方法，所述钝化层材料为纳米硅氧化物。
上述的薄膜晶体管的制作方法，所述源漏极电极为钼或铝材质。
上述的薄膜晶体管的制作方法，所述介电层材料为纳米硅氧化物。
一种薄膜晶体管，包括：基板，在所述基板上依次设置有缓冲层、有源层、栅极绝缘层和栅极层；
在所述缓冲层、有源层和栅极层上还设置有介电层，所述介电层上设置有源极和漏极，所述源极和漏极穿过所述介电层与所述有源层相接触；
所述介电层、源极和漏极上设置有钝化层，在所述钝化层上设置有机光阻层；
所述有机光阻层上设置有铟锡氧化物电极，所述铟锡氧化物电极穿过所述钝化层的孔与所述源极或漏极相接触；
在所述有机光阻层和铟锡氧化物电极上设置有像素定义层；
在所述像素定义层内设置有有机发光器件，且所述有机发光器件穿过所述像素定义层与所述铟锡氧化物电极相接触。
在上述技术方案中，本发明提供的薄膜晶体管的制作方法，通过在顶栅自对准结构、完成源漏极电极后，使用等离子增强化学相沉积钝化层，沉积完后先不制作图形。接着制作有机光阻层并图形化，在有机光阻层图形化并退火后，以有机光阻层为模具，对钝化层进行干法刻蚀，调节适当的功率从而得到钝化层的孔。这样既可以省掉一块模具，工艺简单，节省制造成本，而且显影液不会直接接触到由于钝化层过蚀刻造成的源漏极电极露出的铝，从而可以达到改善产品的特性的目的。
由于上述薄膜晶体管的制作方法具有上述技术效果，利用该方法构造的薄膜晶体管也应具有相应的技术效果。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。
图1为本申请的一个实施例中薄膜晶体管的制作方法的流程图。
图2为本申请的一个实施例中薄膜晶体管的结构示意图。
具体实施方式
下面将结合附图对本发明作进一步说明。
如图1所示，示意性地显示了该薄膜晶体管的制作方法，该方法包括：
步骤S101：在玻璃基板(glass)1上依次制作缓冲层(Buffer)2、有缘层(IGZO)3、栅极绝缘层(Gate insulator)4和栅极层(Gate electrode)5并图形化处理。
步骤S102：在缓冲层2、有源层3和栅极层5上制作介电层(inter layerdielectric)6并图形化处理。
步骤S103：在介电层6上制作源极(Source)12和漏极(Drain)13，使源极12和漏极13穿过介电层6与有源层3相接触，对源极12和漏极13进行图形化处理；
步骤S104：在介电层6、源极12及漏极13上依次制作钝化层(PV)7和有机光阻层(PLN)8，并对有机光阻层8进行图形化处理，另外，对有机光阻层8图形化处理之后，还需对有机光阻层8进行退火(anneal)处理；
步骤S105：以有机光阻层8为模具(mask)对钝化层7进行干法刻蚀(dry etch)处理从而得到钝化层7的孔(etch)，其中，钝化层7的孔与所述源极12或漏极13相连；
步骤S106：通过得到的钝化层7的孔完成对有机发光器件(OLED)10的制作。
在顶栅自对准结构、完成源极12和漏极13后，沉积钝化层7，沉积完后先不制作图形。接着制作有机光阻层8并图形化，在有机光阻层8图形化并退火后，以有机光阻层8为模具，对钝化层7进行干法刻蚀，调节适当的功率(power)从而得到钝化层7的孔。这样既可以省掉一块模具，工艺简单，节省制造成本，而且显影液不会直接接触到由于钝化层7过蚀刻(etch)造成的源极12或漏极13露出的铝(AI)，从而可以达到改善产品的特性的目的。
在一个实施例中，在步骤S101中，使用光刻工艺对缓冲层2、有源层3、栅极绝缘层4和栅极层5进行图形化处理。
在一个实施例中，在步骤S103中，对所述源极12及漏极13与所述有源层3的接触区域进行等离子体导体化处理。
在一个实施例中，等离子体为电离的氮气或氩气或氦气或氨气。
在一个实施例中，在步骤S104中，使用等离子体增强化学气相沉积法沉积所述钝化层7。
在一个实施例中，步骤S106进一步包括：
步骤S1061：在所述有机光阻层8上制作铟锡氧化物电极(ITO)9，使所述铟锡氧化物电极9穿过所述钝化层7的孔与所述源极12或漏极13相接触，对所述铟锡氧化物电极9图形化处理；
步骤S1062：在所述有机光阻层8和铟锡氧化物电极9上制作像素定义层(PDL)11并图形化处理；
步骤S1063：在铟锡氧化物电极9上蒸镀有机发光材料，完成对有机发光器件10的制作。
在一个实施例中，钝化层7材料为纳米硅氧化物(SiOx)。
在一个实施例中，源漏极12电极材料为钼或铝(Mo/Al/Mo)。
在一个实施例中，介电层6材料为纳米硅氧化物(SiOx)。
在一个实施中，如图2所示，薄膜晶体管，包括：
玻璃基板1，在玻璃基板1上依次构造有缓冲层2、有源层3、栅极绝缘层4和栅极层5。
在缓冲层2、有源层3和栅极层5上还构造有介电层6，介电层6上构造有源极12和漏极13，源极12和漏极13穿过所述介电层6与有源层3相接触。
介电层6、源极12和漏极13上构造有钝化层7，钝化层上构造有有机光阻层8。
有机光阻层8上构造有铟锡氧化物电极9，铟锡氧化物电极9穿过钝化层7的孔与源极12或漏极13相接触。
在有机光阻层8和铟锡氧化物电极9上构造有像素定义层11。
在所述像素定义层11内设置有有机发光器件10，且所述有机发光器件10穿过所述像素定义层11与所述铟锡氧化物电极9相接触。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (10)

1.薄膜晶体管的制作方法，其特征在于，该方法包括：
步骤S101：在基板上依次制作缓冲层、有源层、栅极绝缘层和栅极层并图形化处理；
步骤S102：在所述缓冲层、有源层和栅极层上制作介电层并图形化处理；
步骤S103：在所述介电层上制作源极和漏极，使所述源极和漏极穿过所述介电层与所述有源层相接触，对所述源极和漏极进行图形化处理；
步骤S104：在所述介电层、源极和漏极上制作钝化层，在所述钝化层上制作有机光阻层，并对所述有机光阻层进行图形化处理；
步骤S105：以所述有机光阻层为模具对所述钝化层进行干法刻蚀处理从而得到所述钝化层的孔；
步骤S106：通过得到的所述钝化层的孔制作有机发光器件。
2.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：在步骤S101中，使用光刻工艺对所述缓冲层、有源层、栅极绝缘层和栅极层进行图形化处理。
3.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：在步骤S103中，对所述源极及漏极与所述有源层的接触区域进行等离子体导体化处理。
4.根据权利要求3所述的薄膜晶体管的制作方法，其特征在于：所述等离子体为电离的氮气或氩气或氦气或氨气。
5.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：在步骤S104中，使用等离子体增强化学气相沉积法沉积所述钝化层。
6.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：步骤S106进一步包括：
步骤S1061：在所述有机光阻层上制作铟锡氧化物电极，使所述铟锡氧化物电极穿过所述钝化层的孔与所述源极或漏极相接触，对所述铟锡氧化物电极图形化处理；
步骤S1062：在所述有机光阻层和铟锡氧化物电极上制作像素定义层并图形化处理；
步骤S1063：在所述铟锡氧化物电极上蒸镀有机发光材料以形成有机发光器件。
7.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：所述钝化层材料为纳米硅氧化物。
8.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：所述源极和漏极为钼或铝材质。
9.根据权利要求1所述的薄膜晶体管的制作方法，其特征在于：所述介电层材料为纳米硅氧化物。
10.利用权利要求1-9中任一项所述的薄膜晶体管的制作方法制作的薄膜晶体管，其特征在于，包括：
基板，在所述基板上依次设置有缓冲层、有源层、栅极绝缘层和栅极层；
在所述缓冲层、有源层和栅极层上还设置有介电层，所述介电层上设置有源极和漏极，所述源极和漏极穿过所述介电层与所述有源层相接触；
所述介电层、源极和漏极上设置有钝化层，所述钝化层上设置有有机光阻层；
所述有机光阻层上设置有铟锡氧化物电极，所述铟锡氧化物电极穿过所述钝化层的孔与所述源极或漏极相接触；
在所述有机光阻层和铟锡氧化物电极上设置有像素定义层；
在所述像素定义层内设置有有机发光器件，且所述有机发光器件穿过所述像素定义层与所述铟锡氧化物电极相接触。
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