JP2007150207A - 誘電体素子とその製造方法 - Google Patents
誘電体素子とその製造方法 Download PDFInfo
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- JP2007150207A JP2007150207A JP2005346136A JP2005346136A JP2007150207A JP 2007150207 A JP2007150207 A JP 2007150207A JP 2005346136 A JP2005346136 A JP 2005346136A JP 2005346136 A JP2005346136 A JP 2005346136A JP 2007150207 A JP2007150207 A JP 2007150207A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims description 29
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000011888 foil Substances 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 20
- 230000003647 oxidation Effects 0.000 abstract description 20
- 238000007254 oxidation reaction Methods 0.000 abstract description 20
- 238000001704 evaporation Methods 0.000 abstract description 9
- 230000008020 evaporation Effects 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 38
- 238000004544 sputter deposition Methods 0.000 description 13
- 238000011084 recovery Methods 0.000 description 9
- 230000001590 oxidative effect Effects 0.000 description 6
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 229910008651 TiZr Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- -1 that is Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49128—Assembling formed circuit to base
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 下部電極12上に誘電体14を形成して、第1の積層構造15を作製する。次に、第1の積層構造15をアニールする。続いて、誘電体14上に上部電極16を形成して、第2の積層構造17を作製する。この後、第2の積層構造17を減圧雰囲気25b下で150℃以上の温度でアニールする。下部電極12および上部電極16の蒸発を防ぐため、第2の積層構造17のアニールは、450℃以下の温度で行うことが好ましい。
【選択図】 図1
Description
Claims (10)
- 下部電極を用意する工程と、
前記下部電極上に誘電体を形成して、第1の積層構造を作製する工程と、
前記第1の積層構造をアニールする工程と、
前記誘電体膜上に上部電極を形成して、第2の積層構造を作製する工程と、
前記第2の積層構造を減圧雰囲気下で150℃以上の温度でアニールする工程と、
を備える誘電体素子の製造方法。 - 前記上部電極は、Cu、Ni、AlおよびAgのうち一つ以上から構成されている、請求項1に記載の誘電体素子の製造方法。
- 前記誘電体は、ペロブスカイト型構造を有しており、且つ、Ba、Sr、Ca、Pb、Ti、Zr、Hfのうち一つ以上の元素を含んでいる請求項1または2に記載の誘電体素子の製造方法。
- 前記上部電極はCuまたはNiから構成されており、
前記第2の積層構造をアニールする工程は、前記第2の積層構造を450℃以下の温度でアニールする、請求項3に記載の誘電体素子の製造方法。 - 前記上部電極はAlまたはAgから構成されており、
前記第2の積層構造をアニールする工程は、前記第2の積層構造を300℃以下の温度でアニールする、請求項3に記載の誘電体素子の製造方法。 - 前記第1の積層構造をアニールする工程は、減圧雰囲気、還元雰囲気または減圧還元雰囲気下で前記第1の積層構造をアニールする、請求項1〜5のいずれかに記載の誘電体素子の製造方法。
- 前記下部電極は、Cu、Ni、AlおよびAgのうち一つ以上から構成されている、請求項6に記載の誘電体素子の製造方法。
- 前記下部電極が金属箔である、請求項1〜7のいずれかに記載の誘電体素子の製造方法。
- 下部電極と、
前記下部電極上に設けられた誘電体と、
前記誘電体上に設けられた上部電極と、
を備える誘電体素子において、
前記上部電極がCu、Ni、AlおよびAgのうち一つ以上から構成されており、
前記誘電体が900以上の誘電率を有しており、リーク電流密度が1×10−6A/cm2以下であることを特徴とする誘電体素子。 - 前記誘電体は、Ba、Sr、Ca、Ti、Zr、Hfのうちの一つ以上を含む酸化物から構成されており、
前記下部電極は、Cu、Ni、AlおよびAgのうち一つ以上から構成されている、
請求項9に記載の誘電体素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346136A JP4670612B2 (ja) | 2005-11-30 | 2005-11-30 | 誘電体素子とその製造方法 |
US11/602,981 US7581311B2 (en) | 2005-11-30 | 2006-11-22 | Method for manufacturing a dielectric element |
KR1020060117538A KR101248792B1 (ko) | 2005-11-30 | 2006-11-27 | 유전체 소자 및 이의 제조방법 |
EP14001474.7A EP2772954A3 (en) | 2005-11-30 | 2006-11-27 | Capacitor and method for manufacturing the same |
EP06024540.4A EP1793416B1 (en) | 2005-11-30 | 2006-11-27 | Capacitor and method for manufacturing the same |
TW095143967A TW200737244A (en) | 2005-11-30 | 2006-11-28 | Dielectric element and method for manufacturing the same |
CN2006101633026A CN1975945B (zh) | 2005-11-30 | 2006-11-30 | 电介质元件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346136A JP4670612B2 (ja) | 2005-11-30 | 2005-11-30 | 誘電体素子とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007150207A true JP2007150207A (ja) | 2007-06-14 |
JP4670612B2 JP4670612B2 (ja) | 2011-04-13 |
Family
ID=37837429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005346136A Active JP4670612B2 (ja) | 2005-11-30 | 2005-11-30 | 誘電体素子とその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7581311B2 (ja) |
EP (2) | EP2772954A3 (ja) |
JP (1) | JP4670612B2 (ja) |
KR (1) | KR101248792B1 (ja) |
CN (1) | CN1975945B (ja) |
TW (1) | TW200737244A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009122774A1 (ja) * | 2008-03-31 | 2009-10-08 | 三井金属鉱業株式会社 | キャパシタ形成材及びキャパシタを備えたプリント配線板 |
JP2010157529A (ja) * | 2008-12-26 | 2010-07-15 | Tdk Corp | 誘電体薄膜素子の製造方法 |
JP2014007239A (ja) * | 2012-06-22 | 2014-01-16 | Tdk Corp | 薄膜コンデンサ |
JP2015025196A (ja) * | 2013-06-20 | 2015-02-05 | Tdk株式会社 | アモルファス誘電体膜および電子部品 |
US10085343B2 (en) | 2016-11-04 | 2018-09-25 | Tdk Corporation | Thin-film capacitor and electronic component embedded substrate |
Families Citing this family (5)
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---|---|---|---|---|
US8813325B2 (en) * | 2011-04-12 | 2014-08-26 | Intermolecular, Inc. | Method for fabricating a DRAM capacitor |
US9646766B2 (en) * | 2012-06-14 | 2017-05-09 | Uchicago Argonne, Llc | Method of making dielectric capacitors with increased dielectric breakdown strength |
EP2980862B1 (en) * | 2013-03-29 | 2019-05-15 | Asahi Kasei Kabushiki Kaisha | Manufacturing method for semiconductor light-emitting element, and semiconductor light-emitting element |
CN109627049A (zh) * | 2017-10-09 | 2019-04-16 | 湖北大学 | 一种提高储能陶瓷材料介电常数的方法 |
EP4295381A1 (en) * | 2021-02-17 | 2023-12-27 | Applied Materials, Inc. | Capacitor dielectric for shorter capacitor height and quantum memory dram |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPH0855967A (ja) * | 1994-07-29 | 1996-02-27 | Texas Instr Inc <Ti> | 強誘電体薄膜キャパシタの製造方法 |
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-
2005
- 2005-11-30 JP JP2005346136A patent/JP4670612B2/ja active Active
-
2006
- 2006-11-22 US US11/602,981 patent/US7581311B2/en active Active
- 2006-11-27 EP EP14001474.7A patent/EP2772954A3/en not_active Withdrawn
- 2006-11-27 EP EP06024540.4A patent/EP1793416B1/en active Active
- 2006-11-27 KR KR1020060117538A patent/KR101248792B1/ko active IP Right Grant
- 2006-11-28 TW TW095143967A patent/TW200737244A/zh unknown
- 2006-11-30 CN CN2006101633026A patent/CN1975945B/zh active Active
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WO2009122774A1 (ja) * | 2008-03-31 | 2009-10-08 | 三井金属鉱業株式会社 | キャパシタ形成材及びキャパシタを備えたプリント配線板 |
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JP2010157529A (ja) * | 2008-12-26 | 2010-07-15 | Tdk Corp | 誘電体薄膜素子の製造方法 |
JP2014007239A (ja) * | 2012-06-22 | 2014-01-16 | Tdk Corp | 薄膜コンデンサ |
JP2015025196A (ja) * | 2013-06-20 | 2015-02-05 | Tdk株式会社 | アモルファス誘電体膜および電子部品 |
US10085343B2 (en) | 2016-11-04 | 2018-09-25 | Tdk Corporation | Thin-film capacitor and electronic component embedded substrate |
Also Published As
Publication number | Publication date |
---|---|
EP2772954A3 (en) | 2014-09-10 |
US20070236866A1 (en) | 2007-10-11 |
JP4670612B2 (ja) | 2011-04-13 |
EP1793416A2 (en) | 2007-06-06 |
EP1793416B1 (en) | 2017-05-10 |
EP2772954A2 (en) | 2014-09-03 |
US7581311B2 (en) | 2009-09-01 |
KR20070056970A (ko) | 2007-06-04 |
KR101248792B1 (ko) | 2013-04-03 |
TW200737244A (en) | 2007-10-01 |
CN1975945B (zh) | 2012-04-11 |
CN1975945A (zh) | 2007-06-06 |
EP1793416A3 (en) | 2009-09-30 |
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