CN1318646C - 制造镀镍的铜基片的方法以及含有此基片的薄膜复合材料 - Google Patents

制造镀镍的铜基片的方法以及含有此基片的薄膜复合材料 Download PDF

Info

Publication number
CN1318646C
CN1318646C CNB018118968A CN01811896A CN1318646C CN 1318646 C CN1318646 C CN 1318646C CN B018118968 A CNB018118968 A CN B018118968A CN 01811896 A CN01811896 A CN 01811896A CN 1318646 C CN1318646 C CN 1318646C
Authority
CN
China
Prior art keywords
copper base
multilayer film
nickel plating
matrix material
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018118968A
Other languages
English (en)
Other versions
CN1466634A (zh
Inventor
马克·法雷利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energenius Inc
Original Assignee
Energenius Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energenius Inc filed Critical Energenius Inc
Publication of CN1466634A publication Critical patent/CN1466634A/zh
Application granted granted Critical
Publication of CN1318646C publication Critical patent/CN1318646C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Laminated Bodies (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明涉及一种通过对镀镍的铜进行退火来制造铜/镍基片的方法。在镀镍步骤之后，可以用本领域公知的方法比如溶胶-凝胶或真空淀积方法在基片上淀积一电介质层比如锆钛酸铅(PZT)。本发明还涉及薄膜复合材料。这些复合材料含有经预退火的镀镍铜基片和电介质层比如PZT。

Description

制造镀镍的铜基片的方法以及含有此基片的薄膜复合材料
发明领域
本发明涉及一种制造用在薄膜复合材料中的镀镍的铜基片的方法以及含有此种镀镍的铜基片的薄膜复合材料。
发明背景
过去几年来，在研制用在空间缩小区域的高容量电化学能量存储装置特别是电容器和电池方面已经进行了诸多努力。电容器和电池都通过分离正负电荷来存储能量。在较小包装中存储较多能量的需求一直推动着进行新的研究。
已发现由薄膜复合材料制成的能量存储装置可用于电子和光电子应用，比如铁电存储装置、热电传感装置、波导调制器和声敏传感器中。例如，将薄膜复合材料用在多种半导体集成电路装置比如模拟电路、rf电路和动态随机存取存储器(DRAM)中。
此复合材料通常由基片、电介质和电极构成；电介质位于基片与电极之间。基片通常由铜、硅、熔融硅石、镀铂的硅、氧化铝、蓝宝石、镀铂的蓝宝石、或单晶SrTiO3制成。
考虑到铜易于获得，通常优选铜作为基片。然而遗憾的是，具有铜基片的薄膜复合材料通常呈现出热迁移和释气特性。热迁移是指在升高的温度下铜离子向电介质中迁移以及电介质中的离子向基片中迁移。当气态铜原子从基片逸入电介质或者电介质在其中进行淀积的炉子中时产生释气。因此需要一种消除这些缺陷的铜基片。
发明概述
本发明涉及一种其上淀积有镍的铜基片的制造方法。另外，本发明涉及一种含有此镀镍的铜基片的薄膜复合材料。通过将镍淀积在铜上然后对所得基片进行退火来制造该镀镍基片。在退火之后，可以用本领域公知方法比如溶胶-凝胶或真空淀积技术将电介质淀积在基片上。
附图的简要说明
图1为表示根据本发明方法用于对镀镍基片进行退火的最佳温度和持续时间的曲线图。
图2为采用扫描电子显微镜获得的镀镍的铜基片在400℃温度下预退火120分钟的内部结构。
图3为采用扫描电子显微镜获得的镀镍的铜基片在900℃温度下预退火5分钟的内部结构。
图4和5为采用扫描电子显微镜获得的镀镍的铜基片在800℃温度下预退火20分钟的内部结构。
图6为采用扫描电子显微镜获得的镀镍的铜基片在500℃温度下预退火90分钟的内部结构。
图7为采用扫描电子显微镜获得的镀镍的铜基片在650℃温度下预退火30分钟的内部结构。
图8表示根据本发明的薄膜复合材料，具有在其上表面和下表面镀有镍的铜基片、电介质、选择性的阻挡层或缓冲层、以及上电极。
图9表示根据本发明的薄膜复合材料，具有完全被镍包覆的铜基片。
优选实施例的详细描述
根据本发明的薄膜复合材料含有镀镍的铜基片和电介质。通过将镍淀积在铜上制造该基片。镍可以淀积在铜基片的一侧或两侧。在一个优选实施例中，镍全部包覆铜基片。
接着将淀积有镍的铜基片在大约400℃至820℃的温度下进行退火，优选在大约800℃下退火。最佳退火持续时间随退火温度而变化。例如，在400℃退火最好持续约120分钟，而在800℃退火则最好持续约20分钟。图1表示最佳退火温度和持续时间，其中最为优选的温度和持续时间为所示直线上的点。随着到该直线的距离增加，导致缺陷基片的结果越来越不可接受。缺陷基片包括那些呈现不可接受介电常数、高压漏电、或脱层的基片。
一般地说，基片厚度(在镀镍之前)为约20微米至约50微米。与电介质相邻一侧Ni的厚度为约0.10微米至约2.0微米。基片的最下表面(没有电介质与之相邻)上Ni的厚度为约0.1微米至约10微米。
可以通过溅射镀膜或本领域公知的其他方法将镍施加在铜基片上。预退火和镀镍步骤优选在没有氧气的气氛中进行，比如在氩气或氮气气氛中进行。(本文所述的预退火指的是在淀积电介质材料之前的退火。)
将电介质淀积在镀镍的铜基片之上一般需要较低的处理温度，以最大限度降低金属薄片与电介质之间的相互扩散和反应。此种电介质还可以通过溶胶-凝胶(其中淀积在室温下进行，经退火的镀镍的铜基片被冷却至室温)施加在基片上，或者通过真空淀积(包括溅射镀膜、电子束蒸发镀膜和其他技术)施加在基片上，其中退火产物被冷却至进行淀积的温度。在后一方法中，例如，当采用真空淀积方法时，在300至400℃的高温施加电介质。电介质淀积可以以单步或多步进行。电介质的厚度随着所得最终产物比如电容器所需的电压量而变化。待施加的电压越高，电介质就会越厚。较典型的电介质厚度为大约600nm。
在一个优选实施例中，电介质为锆钛酸铅PZT，其化学式为PbaLbZrxTiyOz，其中L为镧系金属，优选为La或Nb，x和y独立地为约0.35至约0.65，z为约2.5至约5.0，a为约0.95至约1.25，b为约0.02至约0.10。这种电介质可以通过采用乙酸铅[Pb(CH3COO)2H2O]、正丙醇锆[Zr(O-nC3H7)4]、异丙醇钛[Ti(O-iC3H7)4]和异丙醇镧[La(O-iC3H7)3]或乙醇铌[Nb(OC2H5)5]作为初始材料制备。在一优选方法中，可以通过将三水合乙酸铅溶解于2-甲氧基乙醇中并且在真空中在110℃下脱水以获得乙酸铅来制备此类电介质。然后将2-甲氧基乙醇中的正丙醇锆和异丙醇钛与处于室温的所得产物加以混合，接着在真空下在110℃回流约2至3个小时，由之获得比如化学式为Pb(Zr0.52Ti0.48)O3的聚合物前体。最后，用甲苯稀释，并加入适量甲酰胺用以防止裂纹以及10mol％过量Pb用以补充在最后退火过程中的氧化铅损失，由此获得0.3M的储液。
尽管可以采用本领域公知的传统电介质，但采用钛酸钡电介质，特别是化学式为BaaTibOc(其中a和b独立地为0.75至1.25，c为2.5至约5.0)的电介质以及化学式为MaBbTicOd(其中a为约0.01至约0.1，b为约0.75至约1.25，c为约0.75至约1.25，d为约2.5至约5.0，M为非反应导电金属)的电介质，可以获得更为有利的结果。优选金、铜、金属间化合物比如Ni3Al、Ru和InSn作为M。这种钡电介质在1998年2月19日公开的PCT WO/98/07167中有讨论，其在此引入作为参考。
在淀积之后，将产物在500℃与600℃之间退火大约20分钟。如果采用较高的温度则此阶段的退火温度可以较短。当达到理想结果时终止退火。预退火步骤可以在比用于将电介质淀积在基片上的退火温度更高的温度下进行；后者称作“后退火”步骤。如果预退火步骤在低于后退火步骤的温度下进行，则预退火可以进行较长的时间，一般长于20分钟。
如图2中所示，在400℃预退火120分钟所得的基片获得平滑的层叠表面。测得介电常数为86，Tgδ(％)为14。图3表示在900℃预退火5分钟的条件下获得的理想结果。该基片的介电常数为110，Tgδ(％)为7。图4和5表示在800℃预退火20分钟获得的理想结果。测得的介电常数分别为75和113。图6和7表示与前述图示相比不太理想的预退火条件。图6为在500℃预退火90分钟所得基片的扫描电子显微照片。所得基片比较粗糙，并呈现脱层。图7为在650℃预退火30分钟所得基片的扫描电子显微照片。所得基片比较粗糙。图2-7中的所有基片都是在Ar气氛中获得的，并且都采用PZT作为电介质通过旋涂淀积在基片上。Cu的厚度为约33至35.6微米。进行测试，其中图5中与电介质邻接的最上表面的Ni的厚度为1.78微米。基片最下表面(不与任何电介质邻接)的Ni的厚度在6.35至7.62微米之间。图2-4以及图6-7中与电介质邻接的最上表面的Ni的厚度为0.1270微米，基片最下表面(不与任何电介质邻接)的Ni的厚度在0.3556至0.5080微米之间。对于图2-7中所有的薄膜复合材料，其铜薄片的厚度为大约34微米。
图8显示了本发明的一个实施例，其中所示薄膜复合材料含有一个具有镀有镍20的铜基片10的镀镍铜基片、电介质50、和选择性的上电极60。镍镀层可以完全或者部分包覆铜基片。替代地，镍镀层仅在两侧包覆铜基片。图8还显示采用了阻挡层或缓冲层30，在淀积电介质之前施加至镀镍基片上。阻挡层一般由贵金属制成，缓冲层一般由玻璃制成，其目的在于防止在基片与电介质之间的原子迁移。
最后，本发明的薄膜复合材料还可以含有上电极或导电层。此上电极可以由任何导电金属比如铝、金、铂或本领域公知的其他金属制成。图2-7中所示的薄膜复合材料采用Al作为上电极。
图9表示其中铜基片10完全被镍20包覆的薄膜复合材料。另外，该薄膜复合材料还可以含有阻挡层或缓冲层30、电介质20和电极60。
在不偏离所附权利要求所限定的本发明范围和精神的情况下，可以对本文所述的特征、复合材料、各元件的操作和结构、步骤以及方法等作出多种改变。

Claims (30)

1.多层薄膜复合材料，包括：
(a)镀镍的铜基片，其中镍沉积在铜基片的两侧上；和
(b)位于该镀镍的铜基片之上的电介质层。
2.多层薄膜复合材料，包括：
(a)镀镍的铜基片；
(b)阻挡层或缓冲层，设置在镀镍的铜基片的至少一侧上；和
(c)位于该镀镍的铜基片之上的电介质层。
3.多层薄膜复合材料，包括：
(a)镀镍的铜基片，其中镍沉积在铜基片的两侧上；
(b)阻挡层或缓冲层，设置在镀镍的铜基片的至少一侧上；和
(c)位于该镀镍的铜基片之上的电介质层。
4.权利要求2或3所述的多层薄膜复合材料，其中阻挡层或缓冲层防止在基片与电介质之间的原子迁移。
5.如权利要求2-4的任一项所述的多层薄膜复合材料，其中镀镍的铜基片的上表面和下表面都镀有阻挡层或缓冲层、及电介质层。
6.如权利要求1所述的薄膜复合材料，其中镀镍的铜基片的铜被镍包封。
7.如权利要求1-6的任一项所述的薄膜复合材料，其中电介质层的电介质包括BaaTibOc，其中a和b独立地为0.75至1.25，c为2.5至5.0。
8.如权利要求1-6的任一项所述的薄膜复合材料，其中电介质层的电介质包括PbaLbZrxTiyOz，其中L为镧系金属，x和y独立地为0.35至0.65，z为2.5至5.0，a为0.95至1.25，b为0.02至0.10。
9.如权利要求1-6的任一项所述的多层薄膜复合材料，其中电介质层的电介质包括MaBbTicOd，其中a为0.01至0.1，b为0.75至1.25，c为0.75至1.25，d为2.5至5.0，M为非反应导电金属。
10.如权利要求1-9的任一项所述的薄膜复合材料，其中阻挡层或缓冲层是导电的。
11.如权利要求1-9的任一项所述的薄膜复合材料，其中阻挡层包含贵金属。
12.如权利要求1-9的任一项所述的薄膜复合材料，其中缓冲层包含玻璃。
13.如权利要求1-12的任一项所述的多层薄膜复合材料，其中基片为铜箔。
14.如权利要求1-13的任一项所述的多层薄膜复合材料，其中铜基片上的镍厚度为0.10微米至2.0微米。
15.如权利要求1-14的任一项所述的多层薄膜复合材料，其中沉积镍之前铜基片的厚度为20微米至50微米。
16.如权利要求9所述的多层薄膜复合材料，其中M为金、铜、或选自Ni3Al、Ru和InSn的金属间化合物。
17.能量存储装置，包含权利要求1-16的任一项所述的多层薄膜复合材料。
18.电容器，包含权利要求1-16的任一项所述的多层薄膜复合材料。
19.多层薄膜复合材料，包括：
(a)经退火的镀镍的铜基片；和
(b)位于该镀镍的铜基片之上的电介质层。
20.如权利要求19所述的多层薄膜复合材料，其中经退火的镀镍的铜基片的铜为箔。
21.如权利要求19或20的多层薄膜复合材料，其中经退火的镀镍的铜基片在铜基片的两侧包含镍。
22.如权利要求21所述的多层薄膜复合材料，其中经退火的镀镍的铜基片被镍包封。
23.如权利要求19-22的任一项所述的多层薄膜复合材料，其中经退火的镀镍的铜基片的与电介质层相邻一侧的镍厚度为0.10微米至2.0微米。
24.能量存储装置，包含权利要求19-23的任一项所述的多层薄膜复合材料。
25.电容器，包含权利要求19-23的任一项所述的多层薄膜复合材料。
26.多层薄膜复合材料，包括：
(a)经退火的镀镍的铜基片，其中铜基片的上表面和下表面镀有镍；
(b)位于经退火的镀镍的铜基片的下表面和上表面之上的电介质；和
(c)阻挡层或缓冲层，在镀镍的铜基片的上表面和下表面各自与电介质层之间。
27.如权利要求26所述的多层薄膜复合材料，其中经退火的镀镍的铜基片被镍包封。
28.如权利要求26或27所述的多层薄膜复合材料，其中铜基片的铜为箔。
29.能量存储装置，包含权利要求26-28的任一项所述的薄膜复合材料。
30.电容器，包含权利要求26-28的任一项所述的薄膜复合材料。
CNB018118968A 2001-06-28 2001-06-28 制造镀镍的铜基片的方法以及含有此基片的薄膜复合材料 Expired - Fee Related CN1318646C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2001/001201 WO2003002782A1 (en) 2001-06-28 2001-06-28 Method of making a nickel-coated copper substrate and thin film composite containing the same

Publications (2)

Publication Number Publication Date
CN1466634A CN1466634A (zh) 2004-01-07
CN1318646C true CN1318646C (zh) 2007-05-30

Family

ID=11004125

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018118968A Expired - Fee Related CN1318646C (zh) 2001-06-28 2001-06-28 制造镀镍的铜基片的方法以及含有此基片的薄膜复合材料

Country Status (4)

Country Link
EP (1) EP1399602A1 (zh)
JP (1) JP2004530584A (zh)
CN (1) CN1318646C (zh)
WO (1) WO2003002782A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107634002A (zh) * 2017-09-26 2018-01-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4148293B2 (ja) * 2004-02-19 2008-09-10 日立化成工業株式会社 薄膜複合材料、およびこれを用いた配線板用材料、配線板、電子部品用材料、電子部品、ならびにこれらの製造方法
JP4670612B2 (ja) * 2005-11-30 2011-04-13 Ｔｄｋ株式会社 誘電体素子とその製造方法
CN101250705B (zh) * 2008-04-01 2010-10-06 西南交通大学 一种强取向双轴织构的镍-铜金属基带层的制备方法
CN103177871B (zh) * 2013-03-01 2016-02-17 溧阳华晶电子材料有限公司 一种具有复合基板的薄膜电容器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189331A (en) * 1978-06-22 1980-02-19 Canada Wire And Cable Limited Oxidation resistant barrier coated copper based substrate and method for producing the same
US5128008A (en) * 1991-04-10 1992-07-07 International Business Machines Corporation Method of forming a microelectronic package having a copper substrate

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1047078B (de) * 1954-04-30 1958-12-18 Siemens Ag Verfahren zur Erhoehung der Dauerhaftfestigkeit temperaturbestaendiger, insbesondereaus siliciumorganischen Lacken bestehender Isolierlackueberzuege auf Kupfer
FR1229059A (fr) * 1958-04-03 1960-09-02 Thomson Houston Comp Francaise Conducteur électrique isolé et sa fabrication
JPS5895301A (ja) * 1981-12-01 1983-06-06 Matsushita Electric Ind Co Ltd レ−ザ−全反射鏡
GB2140460B (en) * 1983-05-27 1986-06-25 Dowty Electronics Ltd Insulated metal substrates
JPH07109830B2 (ja) * 1990-10-22 1995-11-22 インターナショナル・ビジネス・マシーンズ・コーポレイション 薄膜積層体における障壁の改良
US5356661A (en) * 1990-11-21 1994-10-18 Sumitomo Electric Industries, Ltd. Heat transfer insulated parts and manufacturing method thereof
AU3632697A (en) * 1996-08-12 1998-03-06 Energenius, Inc. Semiconductor supercapacitor system, method for making same and articles produced therefrom
US6007925A (en) * 1996-11-25 1999-12-28 Sony Corporation Electronic apparatus casing and electronic apparatus casing production method
IT1293540B1 (it) * 1997-07-16 1999-03-01 Sviluppo Materiali Spa Procedimento per la produzione di rivestimenti spessi su componenti in rame o sue leghe

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189331A (en) * 1978-06-22 1980-02-19 Canada Wire And Cable Limited Oxidation resistant barrier coated copper based substrate and method for producing the same
US5128008A (en) * 1991-04-10 1992-07-07 International Business Machines Corporation Method of forming a microelectronic package having a copper substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107634002A (zh) * 2017-09-26 2018-01-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Also Published As

Publication number Publication date
CN1466634A (zh) 2004-01-07
WO2003002782A1 (en) 2003-01-09
EP1399602A1 (en) 2004-03-24
JP2004530584A (ja) 2004-10-07

Similar Documents

Publication Publication Date Title
KR101120872B1 (ko) 전극박 및 그 제조 방법과 전해 컨덴서
US8228663B2 (en) Laminated ceramic electronic component
KR100359055B1 (ko) 박막형 슈퍼 캐패시터 및 그 제조방법
KR100836131B1 (ko) 나노와이어를 이용한 커패시터 및 그 제조방법
JP2008507847A (ja) 高エネルギー貯蔵密度及び低ｅｓｒを有するコンデンサ
KR20020070892A (ko) 커패시터, 커패시터 내장 회로기판 및 그들 제조 방법
JP2006523153A (ja) 金属箔上におけるチタン酸バリウムストロンチウムを含む多層構造
US9908817B2 (en) Multilayer capacitors, method for making multilayer capacitors
US7742277B2 (en) Dielectric film capacitor and method of manufacturing the same
CN110880413A (zh) 多层陶瓷电子组件
US6649930B2 (en) Thin film composite containing a nickel-coated copper substrate and energy storage device containing the same
CN1790569B (zh) 电介质薄膜、薄膜电介质元件及其制造方法
US20130314842A1 (en) Thin film condenser for high-density packaging, method for manufacturing the same, and high-density package substrate including the same
CN1318646C (zh) 制造镀镍的铜基片的方法以及含有此基片的薄膜复合材料
US20080171140A1 (en) Thin Film Ferroelectric Composites and Method of Making and Using the Same
TW200401314A (en) Capacitors having a high energy density
US20090168299A1 (en) Method for the production of a coating of a porous, electrically conductive support material with a dielectric, and production of capacitors having high capacity density with the aid of said method
KR100734060B1 (ko) ＬｉＰＯＮ을 보호막으로 갖는 ＬＬＴ계 고체 전해질 및 그제조방법
KR20220168528A (ko) 보호층과 함께 전 면적에 내부 전극이 인쇄된 적층 세라믹 커패시터의 단자 전극 제조방법
CN112289931A (zh) 一种忆阻器的制备方法、忆阻器及存储器件
JP3471655B2 (ja) 高誘電体薄膜コンデンサの製造方法
JP7214257B1 (ja) 積層セラミックコンデンサ端電極の作製と、全面積に内部電極保護層を印刷する方法
KR100567394B1 (ko) 박막형 슈퍼 캐패시터
US20220310332A1 (en) Electrochemical device and method for manufacturing the same
KR0150982B1 (ko) 반도체 소자의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee