JP2007194592A - 誘電体素子とその製造方法 - Google Patents
誘電体素子とその製造方法 Download PDFInfo
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- JP2007194592A JP2007194592A JP2006309590A JP2006309590A JP2007194592A JP 2007194592 A JP2007194592 A JP 2007194592A JP 2006309590 A JP2006309590 A JP 2006309590A JP 2006309590 A JP2006309590 A JP 2006309590A JP 2007194592 A JP2007194592 A JP 2007194592A
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000004020 conductor Substances 0.000 claims abstract description 97
- 239000000654 additive Substances 0.000 claims abstract description 57
- 230000000996 additive effect Effects 0.000 claims abstract description 49
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 9
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 9
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 239000011888 foil Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 53
- 239000003990 capacitor Substances 0.000 description 27
- 239000010409 thin film Substances 0.000 description 25
- 238000009826 distribution Methods 0.000 description 22
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 239000003989 dielectric material Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 241000519995 Stachys sylvatica Species 0.000 description 2
- 229910008651 TiZr Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- -1 that is Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2063—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10 mixed adhesion layer containing metallic/inorganic and polymeric materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49163—Manufacturing circuit on or in base with sintering of base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49204—Contact or terminal manufacturing
- Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
- Y10T29/4921—Contact or terminal manufacturing by assembling plural parts with bonding
- Y10T29/49211—Contact or terminal manufacturing by assembling plural parts with bonding of fused material
- Y10T29/49213—Metal
Abstract
【解決手段】誘電体素子10は、第1の導電体12と、その上に設けられた誘電体14を有している。第1の導電体と誘電体との間には中間領域16が形成されている。中間領域では、第1の導電体および誘電体のいずれとも異なる添加物が誘電体と混在している。この添加物は、Si、Al、P、Mg、Mn、Y、V、Mo、Co、Nb、FeおよびCrのうち一つ以上の元素を含んでいる。
【選択図】図1
Description
のように表される。ここで、Rは圧子の曲率半径であり、Hは下地材のブリネル硬度である。
Claims (12)
- 第1の導電体と、
前記第1の導電体上に設けられた誘電体と、
前記第1の導電体と前記誘電体との間に位置し、前記第1の導電体および前記誘電体のいずれとも異なる添加物と前記誘電体とが混在する中間領域と、
を備え、
前記添加物は、Si、Al、P、Mg、Mn、Y、V、Mo、Co、Nb、FeおよびCrのうち一つ以上の元素を含んでいる、誘電体素子。 - 前記添加物は、スクラッチ法によって計測される前記誘電体の臨界剥離荷重値を高める濃度を前記中間領域において有している、誘電体素子。
- 前記第1の導電体は、Ni、CuもしくはAl、またはこれらのいずれかを主成分とする合金から構成されている、請求項1または2に記載の誘電体素子。
- 前記添加物は、前記元素の酸化物を含んでいる、請求項1〜3のいずれかに記載の誘電体素子。
- 前記誘電体上に設けられた第2の導電体を更に備え、
前記第1の導電体は前記添加物を含んでおり、前記元素の前記第1の導電体における濃度は、当該元素がSiのときは10ppm〜5000ppmであり、当該元素がAl、P、Mg、Mn、Y、V、Mo、Co、Nb、FeまたはCrのときは10ppm〜3000ppmである、請求項1〜4のいずれかに記載の誘電体素子。 - 第1の導電体と、
前記第1の導電体上に設けられた誘電体と、
前記第1の導電体と前記誘電体との間に位置し、前記第1の導電体および前記誘電体のいずれとも異なる添加物が前記誘電体と混在する中間領域と
を備え、
前記第1の導電体はNiから構成されるとともに前記添加物を含んでおり、前記添加物はSiを含んでおり、前記第1の導電体におけるSiの濃度が10ppm〜5000ppmである、誘電体素子。 - 前記誘電体は酸化物である、請求項1〜6のいずれかに記載の誘電体素子。
- 前記誘電体は、ペロブスカイト構造を有しており、Ba、Sr、Ca、Pb、Ti、ZrおよびHfのうち一つ以上の元素を含んでいる、請求項7に記載の誘電体素子。
- 前記第1の導電体が金属箔である、請求項1〜8のいずれかに記載の誘電体素子。
- 前記第1の導電体および前記誘電体を支持する基材を更に備える請求項1〜9のいずれかに記載の誘電体素子。
- Si、Al、P、Mg、Mn、Y、V、Mo、Co、Nb、FeおよびCrのうち一つ以上の元素を添加物として含む第1の導電体を用意する工程と、
前記第1の導電体上に、前記添加物と異なる材料から構成される誘電体を設ける工程と、
前記第1の導電体および前記誘電体を加熱して、前記第1の導電体と前記誘電体との間に、前記添加物と前記誘電体とが混在する中間領域を形成し、それにより、スクラッチ法によって計測される前記誘電体の臨界剥離荷重値を高める工程と
を備える誘電体素子の製造方法。 - 添加物を含む第1の導電体を用意する工程と、
前記第1の導電体上に、前記添加物と異なる材料から構成される誘電体を設ける工程と、
前記第1の導電体および前記誘電体を加熱して、前記第1の導電体と前記誘電体との間に、前記添加物と前記誘電体とが混在する中間領域を形成する工程と
を備え、
前記第1の導電体はNiから構成されており、前記添加物はSiを含んでおり、前記第1の導電体におけるSiの濃度が10ppm〜5000ppmである、誘電体素子の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006309590A JP2007194592A (ja) | 2005-12-20 | 2006-11-15 | 誘電体素子とその製造方法 |
US11/637,709 US7808769B2 (en) | 2005-12-20 | 2006-12-13 | Dielectric device and method of manufacturing the same |
TW095147645A TW200735146A (en) | 2005-12-20 | 2006-12-19 | Dielectric device and method of manufacturing the same |
EP06026321.7A EP1801823B1 (en) | 2005-12-20 | 2006-12-19 | Multilayer device and method of manufacturing the same |
CN2006101692202A CN1988084B (zh) | 2005-12-20 | 2006-12-20 | 电介质元件及其制造方法 |
KR1020060130771A KR101238754B1 (ko) | 2005-12-20 | 2006-12-20 | 유전체 소자 및 이의 제조방법 |
US12/868,425 US8468693B2 (en) | 2005-12-20 | 2010-08-25 | Dielectric device and method of manufacturing the same |
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JP2005366715 | 2005-12-20 | ||
JP2006309590A JP2007194592A (ja) | 2005-12-20 | 2006-11-15 | 誘電体素子とその製造方法 |
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JP2007194592A true JP2007194592A (ja) | 2007-08-02 |
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---|---|
US (2) | US7808769B2 (ja) |
EP (1) | EP1801823B1 (ja) |
JP (1) | JP2007194592A (ja) |
KR (1) | KR101238754B1 (ja) |
CN (1) | CN1988084B (ja) |
TW (1) | TW200735146A (ja) |
Cited By (3)
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JP2009267376A (ja) * | 2008-03-31 | 2009-11-12 | Tdk Corp | 薄膜コンデンサ、及び薄膜コンデンサの製造方法 |
JP2010226035A (ja) * | 2009-03-25 | 2010-10-07 | Tdk Corp | 誘電体素子及び誘電体素子の製造方法 |
JP2017050409A (ja) * | 2015-09-02 | 2017-03-09 | Tdk株式会社 | 薄膜キャパシタ |
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EP2588851B1 (en) | 2010-06-30 | 2016-12-21 | Life Technologies Corporation | Ion-sensing charge-accumulation circuit and method |
CN103513113B (zh) * | 2012-06-28 | 2017-03-01 | 联想(北京)有限公司 | 一种信息获取方法、设备及电容 |
CN103151168B (zh) * | 2013-03-01 | 2016-01-06 | 溧阳华晶电子材料有限公司 | 一种薄膜电容器用镍基板 |
KR102225451B1 (ko) | 2019-06-28 | 2021-03-09 | 삼성전기주식회사 | 유전체 조성물 및 이를 포함하는 적층형 전자 부품 |
CN117177554A (zh) * | 2022-05-23 | 2023-12-05 | 华为技术有限公司 | 电子器件、芯片、电路板和电子设备 |
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Also Published As
Publication number | Publication date |
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CN1988084B (zh) | 2012-11-28 |
KR20070065835A (ko) | 2007-06-25 |
US8468693B2 (en) | 2013-06-25 |
TW200735146A (en) | 2007-09-16 |
KR101238754B1 (ko) | 2013-03-06 |
EP1801823B1 (en) | 2016-05-25 |
CN1988084A (zh) | 2007-06-27 |
US20070138128A1 (en) | 2007-06-21 |
US20100323097A1 (en) | 2010-12-23 |
EP1801823A1 (en) | 2007-06-27 |
US7808769B2 (en) | 2010-10-05 |
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