JP2007123861A5 - - Google Patents
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- JP2007123861A5 JP2007123861A5 JP2006262991A JP2006262991A JP2007123861A5 JP 2007123861 A5 JP2007123861 A5 JP 2007123861A5 JP 2006262991 A JP2006262991 A JP 2006262991A JP 2006262991 A JP2006262991 A JP 2006262991A JP 2007123861 A5 JP2007123861 A5 JP 2007123861A5
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- Prior art keywords
- oxide semiconductor
- gate electrode
- film
- forming
- oxide
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims 53
- 238000004519 manufacturing process Methods 0.000 claims 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- CXKCTMHTOKXKQT-UHFFFAOYSA-N Cadmium oxide Chemical compound [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 4
- 239000011787 zinc oxide Substances 0.000 claims 4
- 229910000838 Al alloy Inorganic materials 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N TiO Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- -1 cadmium zinc Chemical compound 0.000 claims 2
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000005712 crystallization Effects 0.000 claims 2
- 239000000395 magnesium oxide Substances 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 229910052719 titanium Inorganic materials 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- 229910001929 titanium oxide Inorganic materials 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 1
Claims (17)
前記導電膜は、前記酸化物半導体膜に接して設けられ、
前記酸化物半導体膜は、前記ゲート絶縁膜を介して前記ゲート電極と重なる領域において前記結晶領域を有することを特徴とする半導体装置。 A gate electrode on a substrate, a gate insulating film, an oxide semiconductor film having an amorphous region and a crystalline region, a conductive film,
The conductive film is provided in contact with the oxide semiconductor film;
The semiconductor device, wherein the oxide semiconductor film includes the crystal region in a region overlapping with the gate electrode with the gate insulating film interposed therebetween.
前記ゲート電極を覆ってゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記ゲート電極をランプ加熱することにより、前記酸化物半導体膜のうち、少なくとも前記ゲート電極と重なる領域の一部を結晶化することを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
By lamp heating the gate electrode, of the oxide semiconductor film, a method for manufacturing a semiconductor device characterized by crystallizing a portion of a region overlapping with at least the gate electrode.
前記ゲート電極を覆ってゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記ゲート電極をランプ加熱することにより、前記酸化物半導体膜に前記ゲート電極と重なる第1の酸化物半導体領域及び前記ゲート電極と重ならない第2の酸化物半導体領域を形成し、
前記第1の酸化物半導体領域は、前記第2の酸化物半導体領域よりも結晶性が高いことを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
By lamp-heating the gate electrode, a first oxide semiconductor region that overlaps the gate electrode and a second oxide semiconductor region that does not overlap the gate electrode are formed in the oxide semiconductor film ,
Before SL first oxide semiconductor region, a method for manufacturing a semiconductor device, wherein the high crystallinity than the second oxide semiconductor region.
前記ゲート電極を覆ってゲート絶縁膜を形成し、
前記ゲート絶縁膜上に導電膜を形成し、
前記ゲート絶縁膜及び前記導電膜上に酸化物半導体膜を形成し、
前記ゲート電極をランプ加熱することにより、前記酸化物半導体膜の一部を選択的に結晶化することを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming a conductive film on the gate insulating film;
Forming an oxide semiconductor film over the gate insulating film and the conductive film;
Wherein by the gate electrode to lamp heating, the method for manufacturing a semiconductor device, characterized by selectively crystallizing a portion of the oxide semiconductor film.
前記ゲート電極を覆ってゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上に導電膜を形成し、
前記ゲート電極をランプ加熱することにより、前記酸化物半導体膜の一部を選択的に結晶化することを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
Forming a conductive film on the oxide semiconductor film;
Wherein by the gate electrode to lamp heating, the method for manufacturing a semiconductor device, characterized by selectively crystallizing a portion of the oxide semiconductor film.
前記ゲート電極を覆ってゲート絶縁膜を形成し、
前記ゲート絶縁膜上に導電膜を形成し、
前記ゲート絶縁膜及び前記導電膜上に酸化物半導体膜を形成し、
前記ゲート電極をランプ加熱することにより、前記酸化物半導体膜に前記ゲート電極と重なる第1の酸化物半導体領域及び前記ゲート電極と重ならない第2の酸化物半導体領域を形成し、
前記第1の酸化物半導体領域は、前記第2の酸化物半導体領域よりも結晶性が高いことを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming a conductive film on the gate insulating film;
Forming an oxide semiconductor film over the gate insulating film and the conductive film;
By lamp-heating the gate electrode, a first oxide semiconductor region that overlaps the gate electrode and a second oxide semiconductor region that does not overlap the gate electrode are formed in the oxide semiconductor film ,
Before SL first oxide semiconductor region, a method for manufacturing a semiconductor device, wherein the high crystallinity than the second oxide semiconductor region.
前記ゲート電極を覆ってゲート絶縁膜を形成し、
前記ゲート絶縁膜上に酸化物半導体膜を形成し、
前記酸化物半導体膜上に導電膜を形成し、
前記ゲート電極をランプ加熱することにより、前記酸化物半導体膜に前記ゲート電極と重なる第1の酸化物半導体領域及び前記ゲート電極と重ならない第2の酸化物半導体領域を形成し、
前記第1の酸化物半導体領域は、前記第2の酸化物半導体領域よりも結晶性が高いことを特徴とする半導体装置の作製方法。 Forming a gate electrode on the substrate;
Forming a gate insulating film covering the gate electrode;
Forming an oxide semiconductor film on the gate insulating film;
Forming a conductive film on the oxide semiconductor film;
By lamp-heating the gate electrode, a first oxide semiconductor region that overlaps the gate electrode and a second oxide semiconductor region that does not overlap the gate electrode are formed in the oxide semiconductor film ,
Before SL first oxide semiconductor region, a method for manufacturing a semiconductor device, wherein the high crystallinity than the second oxide semiconductor region.
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JP2006262991A JP5064747B2 (en) | 2005-09-29 | 2006-09-27 | Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device |
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JP2005283782 | 2005-09-29 | ||
JP2005283782 | 2005-09-29 | ||
JP2006262991A JP5064747B2 (en) | 2005-09-29 | 2006-09-27 | Semiconductor device, electrophoretic display device, display module, electronic device, and method for manufacturing semiconductor device |
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JP2008200670A Division JP5020190B2 (en) | 2005-09-29 | 2008-08-04 | Semiconductor device and manufacturing method thereof |
JP2009177524A Division JP5137912B2 (en) | 2005-09-29 | 2009-07-30 | Method for manufacturing semiconductor device |
JP2010129921A Division JP5116804B2 (en) | 2005-09-29 | 2010-06-07 | Semiconductor device |
JP2011008550A Division JP5031109B2 (en) | 2005-09-29 | 2011-01-19 | Semiconductor device and manufacturing method thereof |
JP2012055690A Division JP5640032B2 (en) | 2005-09-29 | 2012-03-13 | Semiconductor device, module, and electronic device |
JP2012160330A Division JP5448280B2 (en) | 2005-09-29 | 2012-07-19 | Semiconductor device |
JP2012160290A Division JP5478676B2 (en) | 2005-09-29 | 2012-07-19 | Method for manufacturing semiconductor device |
JP2012160408A Division JP5640045B2 (en) | 2005-09-29 | 2012-07-19 | Semiconductor device, electrophoretic display device, display module, and electronic device |
Publications (3)
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JP2007123861A JP2007123861A (en) | 2007-05-17 |
JP2007123861A5 true JP2007123861A5 (en) | 2008-09-18 |
JP5064747B2 JP5064747B2 (en) | 2012-10-31 |
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