JP5859632B2 - Display device - Google Patents

Description

The present invention relates to an object, a method, or a method for producing an object. In particular, the present invention relates to a display device or a semiconductor device. In particular, the present invention relates to a display device. In particular, the present invention relates to an active matrix liquid crystal display device.

In recent years, liquid crystal display devices and EL display devices have been rapidly developed as display devices. In particular, the spread of liquid crystal display devices is remarkable. A liquid crystal display device is required to have high brightness, high contrast, high-speed response, a wide viewing angle, and the like. In liquid crystal display devices mounted on portable electronic devices, reduction of power consumption, weight reduction, and size reduction are also important issues.

Various techniques have been developed to widen the viewing angle of liquid crystal display devices. As a technique for expanding the viewing angle, for example, MVA (Multi Vertical Domain.
It is called VA. ) Method PVA (Patterned Vertical Alignment)
t. Hereinafter referred to as PVA. ) Method and CPA (Continuous Pinwheel)
Alignment) method. Although such a technique has widened the viewing angle as compared with the prior art, it is insufficient. Therefore, by dividing one pixel into two sub-pixels, the alignment state of the liquid crystal is made different, and the illusion is that the tilt angle of the liquid crystal molecules is averaged and the display is uniform from any direction. Has been developed to improve viewing angle characteristics (for example, Patent Document 1).

JP 2006-276582 A

In a liquid crystal display device, viewing angle characteristics can be improved by providing subpixels in a pixel and providing the pixel with a plurality of alignment states. However, the viewing angle characteristics are still not sufficient, and the viewing angle characteristics may be improved by adding more subpixels.

However, when the number of subpixels is simply increased, there arises an inconvenience of a decrease in aperture ratio and an increase in driving circuit, which not only causes an increase in manufacturing cost, but also has a negative effect that performance as a display device itself decreases. . Specifically, when the aperture ratio decreases, the brightness and contrast decrease, and the power consumption increases. Alternatively, the pixel layout density increases, the manufacturing yield decreases, and the cost increases. Alternatively, as the number of subpixels increases, the number of image signals to be input also increases. Therefore, the number of connection points between the glass substrate and the external drive circuit increases. As a result, reliability becomes low due to poor contact or the like.

An object of the present invention is to provide a display device having excellent viewing angle characteristics while maintaining performance as a display device. Another object of the present invention is to provide a display device with high reliability. Another object of the present invention is to provide a display device with high contrast. Another object of the present invention is to provide a lightweight display device. Alternatively, it is an object of the present invention to provide a display device with a small size. Alternatively, it is an object of the present invention to provide a display device with high luminance. Alternatively, it is an object of the present invention to provide a display device with low power consumption. Alternatively, it is an object of the present invention to provide a display device with a high aperture ratio. Alternatively, it is an object of the present invention to provide a display device with low manufacturing cost.

One aspect of the present invention is a liquid crystal display device including three or more liquid crystal elements in one pixel and having different voltage values applied to the liquid crystal elements. In order to vary the voltage applied to each liquid crystal element, an element for dividing the applied voltage is arranged. Alternatively, an element that converts current to voltage or an element that converts voltage to current is provided. For example, a capacitive element, a resistive element, a nonlinear element, a switch, a transistor, a diode-connected transistor, a diode (PIN type, PN type, Schottky type, MIM type, MIS type, etc.), an inductor element, etc. To do.

Note that various types of switches can be used. Examples include electrical switches and mechanical switches. In other words, anything that can control the current flow,
It is not limited to a specific thing. For example, as a switch, a transistor (for example, a bipolar transistor, a MOS transistor, etc.), a diode (for example, a PN diode, PI, etc.)
N diode, Schottky diode, MIM (Metal Insulator M
etal) diode, MIS (Metal Insulator Semiconductor)
ctor) diodes, diode-connected transistors, etc.), thyristors, etc. can be used. Alternatively, a logic circuit combining these can be used as a switch.

An example of a mechanical switch is a switch using MEMS (micro electro mechanical system) technology such as a digital micromirror device (DMD). The switch has an electrode that can be moved mechanically, and operates by controlling connection and disconnection by moving the electrode.

In the case where a transistor is used as a switch, the transistor operates as a mere switch, and thus the polarity (conductivity type) of the transistor is not particularly limited. However, when it is desired to suppress off-state current, it is desirable to use a transistor having a polarity with smaller off-state current. As a transistor with low off-state current, a transistor having an LDD region, a transistor having a multi-gate structure, and the like can be given. Alternatively, an N-channel transistor is preferably used in the case where the transistor operates as a switch when the potential of the source terminal of the transistor is close to the potential of a low potential power source (Vss, GND, 0 V, or the like). On the other hand, it is desirable to use a P-channel transistor when operating in a state where the potential of the source terminal is close to the potential of the high potential side power supply (Vdd or the like). This is because an N-channel transistor operates when the source terminal is close to the potential of the low-potential side power supply, and a P-channel transistor operates when the source terminal is close to the potential of the high-potential side power supply. This is because the absolute value of the voltage between them can be increased, so that it can easily operate as a switch. This is because the source follower operation is rare and the output voltage is less likely to decrease.

Note that CMO using both N-channel and P-channel transistors
An S-type switch may be used as the switch. When a CMOS switch is used, a current flows when one of the P-channel transistor and the N-channel transistor is turned on, so that the switch can easily function as a switch. For example, the voltage can be appropriately output regardless of whether the voltage of the input signal to the switch is high or low. Further, since the voltage amplitude value of the signal for turning on or off the switch can be reduced, the power consumption can be reduced.

Note that when a transistor is used as the switch, the switch includes an input terminal (one of a source terminal or a drain terminal), an output terminal (the other of the source terminal or the drain terminal),
And a terminal for controlling conduction (gate terminal). On the other hand, when a diode is used as the switch, the switch may not have a terminal for controlling conduction. Therefore, the use of a diode as a switch rather than a transistor can reduce the wiring for controlling the terminal.

In addition, when it is explicitly described that A and B are connected, A and B are electrically connected, and A and B are functionally connected. , A and B are directly connected. Here, A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or text, and includes things other than the connection relation shown in the figure or text.

For example, when A and B are electrically connected, an element (for example, a switch, a transistor, a capacitor, an inductor, a resistance element, a diode, or the like) that enables electrical connection between A and B is provided. 1 or more may be arranged between A and B. Alternatively, when A and B are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.), a signal conversion circuit that enables functional connection between A and B (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit etc. that changes the potential level of the signal), voltage source, current source, switching circuit , Amplifier circuits (circuits that can increase signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, storage circuits, control circuits, etc.) are between A and B One or more of them may be arranged. Alternatively, when A and B are directly connected, A and B may be directly connected without sandwiching other elements or other circuits between A and B.

Note that in the case where it is explicitly described that A and B are directly connected, when A and B are directly connected (that is, another element or other circuit between A and B). ) And A and B are electrically connected (that is, A and B are connected with another element or another circuit sandwiched between them). ).

Note that in the case where it is explicitly described that A and B are electrically connected, another element is connected between A and B (that is, between A and B). Or when A and B are functionally connected (that is, they are functionally connected with another circuit between A and B). And A and B are directly connected (
That is, it is assumed that A and B are connected without interposing another element or another circuit). That is, when it is explicitly described that it is electrically connected, it is the same as when it is explicitly only described that it is connected.

Note that a display element, a display device that includes a display element, a light-emitting element, and a light-emitting device that includes a light-emitting element can have various modes and can include various elements. For example, as a display element, a display device, a light-emitting element, or a light-emitting device, an EL element (an EL element including an organic substance and an inorganic substance, an organic EL element, an inorganic EL element), an electron-emitting element, a liquid crystal element,
Electronic ink, electrophoretic element, grating light valve (GLV), plasma display (PDP), digital micromirror device (DMD), piezoelectric ceramic display, carbon nanotube, etc., due to electromagnetic action, contrast, brightness, reflectance, A display medium whose transmittance and the like change can be used. An EL display is used as a display device using an EL element, and a field emission display (FED) or a SED type flat display (SED: Surface) is used as a display device using an electron-emitting device.
Liquid crystal displays (transmission type liquid crystal display, transflective type liquid crystal display, reflection type liquid crystal display, direct view type liquid crystal display, projection type liquid crystal display), electronic ink, etc., as display devices using liquid crystal elements such as -conduction electron-emitter display There is electronic paper as a display device using an electrophoretic element.

Note that an EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. Note that the EL layer uses light emission (fluorescence) from singlet excitons,
Includes those that use light emission (phosphorescence) from triplet excitons, those that use light emission (fluorescence) from singlet excitons, and those that use light emission (phosphorescence) from triplet excitons , One formed by organic matter, one formed by inorganic matter, one containing organic and one formed by inorganic matter, polymer material, low molecular material, polymer material and low A material containing a molecular material can be used. However, it is not limited to this, E
Various elements can be used as the L element.

The electron-emitting device is an element that draws electrons by concentrating a high electric field on a sharp cathode.
For example, electron emission devices such as Spindt type, carbon nanotube (CNT) type, metal
MIM (Metal-Insulator-Metal) type in which insulator-metal is laminated, MIS (Metal-Insulator-Semico) in which metal-insulator-semiconductor is laminated
nductor) type, MOS type, silicon type, thin film diode type, diamond type, surface conduction emitter SCD type, ode type, diamond type, surface conduction emitter SCD type, metal-
A thin film type such as an insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SED) type, or the like can be used. However, the present invention is not limited to this, and various types of electron-emitting devices can be used.

Note that a liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal, and includes a pair of electrodes and liquid crystal. The optical modulation effect of liquid crystal is
It is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). Liquid crystal elements include nematic liquid crystal, cholesteric liquid crystal, smectic liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, lyotropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain. Type liquid crystal, side chain type polymer liquid crystal, plasma addressed liquid crystal (PDLC), banana type liquid crystal, TN (Twisted)
Nematic) mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe)
Field Switching mode, MVA (Multi-domain Ve)
Vertical Alignment) mode, PVA (Patterned Verti)
cal Alignment), ASV (Advanced Super View) mode, ASM (Axial Symmetrical Aligned Micro-c)
cell) mode, OCB (Optical Compensated Birefrin)
generation) mode, ECB (Electrically Controlled Bi)
refrenceence) mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liquid)
id Crystal) mode, PDLC (Polymer Dispersed Li)
(quid Crystal) mode, guest host mode, and the like can be used. However, the present invention is not limited to this, and various liquid crystal elements can be used.

Electronic paper includes those displayed by molecules such as optical anisotropy and dye molecule orientation, those displayed by particles such as electrophoresis, particle movement, particle rotation, and phase change. It is displayed by moving, displayed by color development / phase change of molecules, displayed by light absorption of molecules, displayed by light emission when electrons and holes are combined, etc. . For example, as electronic paper, microcapsule type electrophoresis, horizontal movement type electrophoresis, vertical movement type electrophoresis, spherical twist ball, magnetic twist ball, cylindrical twist ball method, charged toner, electronic powder fluid, magnetophoretic type, magnetic heat sensitivity Formula, electrowetting, light scattering (transparent white turbidity), cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bistable nematic liquid crystal, ferroelectric liquid crystal, dichroic dye / liquid crystal dispersion type, movable film, leuco dye extinction Color, photochromic, electrochromic, electrodeposition, flexible organic EL, etc. can be used. However, the present invention is not limited to this, and various electronic papers can be used. Here, by using microcapsule electrophoresis, aggregation and precipitation of electrophoretic particles, which is a drawback of the electrophoresis system, can be solved. The electronic powder fluid has merits such as high-speed response, high reflectance, wide viewing angle, low power consumption, and memory property.

Note that the plasma display encloses a rare gas with a substrate having an electrode formed on the surface and a substrate having an electrode and a minute groove formed on the surface and a phosphor layer in the groove facing each other at a narrow interval. It has a structure. In addition, a display can be performed by generating an ultraviolet-ray by applying a voltage between electrodes and making fluorescent substance light. In addition, as a plasma display, D
A C-type PDP or an AC-type PDP may be used. Here, as a plasma display panel, A
SW (Address Full Sustain) drive, ADS (Address Display Se) that divides subframe into reset period, address period, and sustain period
driven), CLEAR (Low Energy Address and)
Reduction of False Control Sequence) drive, A
LIS (Alternate Lightning of Surfaces) method, TE
RES (Technology of Reciprocal Susfainer) driving or the like can be used. However, the present invention is not limited to this, and various types of plasma displays can be used.

Note that a display device that requires a light source, such as a liquid crystal display (transmission type liquid crystal display, transflective type liquid crystal display, reflection type liquid crystal display, direct view type liquid crystal display, projection type liquid crystal display), or a grating light valve (GLV) is used. As a light source of a display device using a conventional display device or a digital micromirror device (DMD), electroluminescence, a cold cathode tube, a hot cathode tube, an LED, a laser light source, a mercury lamp, or the like can be used. However, the present invention is not limited to this, and various light sources can be used.

Types of Transistors Various types of transistors can be used as a transistor. Thus, there is no limitation on the type of transistor used. For example, amorphous silicon, polycrystalline silicon,
A thin film transistor (TFT) or the like having a non-single-crystal semiconductor film typified by microcrystalline (also referred to as microcrystal or semiamorphous) silicon can be used. When using TFT, there are various advantages. For example, since manufacturing can be performed at a lower temperature than that of single crystal silicon, manufacturing cost can be reduced or a manufacturing apparatus can be increased in size. Since the manufacturing apparatus can be enlarged, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured at the same time, it can be manufactured at low cost. Furthermore, since the manufacturing temperature is low, a substrate with low heat resistance can be used. Therefore, a transistor can be manufactured on a transparent substrate. And
Transmission of light through the display element can be controlled by using a transistor over a transparent substrate. Alternatively, since the thickness of the transistor is small, part of the film included in the transistor can transmit light. Therefore, the aperture ratio can be improved.

Note that by using a catalyst (such as nickel) when manufacturing polycrystalline silicon, it is possible to further improve crystallinity and to manufacture a transistor with favorable electrical characteristics. As a result, a gate driver circuit (scan line driver circuit) and a source driver circuit (signal line driver circuit)
The signal processing circuit (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) can be integrally formed on the substrate.

Note that by using a catalyst (such as nickel) when manufacturing microcrystalline silicon, crystallinity can be further improved and a transistor with favorable electrical characteristics can be manufactured. At this time, crystallinity can be improved only by applying heat treatment without laser irradiation. As a result, part of the gate driver circuit (scanning line driving circuit) and the source driver circuit (analog switch or the like) can be formed integrally on the substrate. Furthermore, in the case where laser irradiation is not performed for crystallization, the crystallinity unevenness of silicon can be suppressed. Therefore, a beautiful image can be displayed.

However, it is possible to produce polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel).

Note that it is preferable to improve the crystallinity of silicon to be polycrystalline or microcrystalline over the entire panel, but the invention is not limited to this. The crystallinity of silicon may be improved only in a partial region of the panel. The crystallinity can be selectively improved by selectively irradiating laser light. For example, the laser beam may be irradiated only to the peripheral circuit region that is a region other than the pixel. Alternatively, the laser beam may be irradiated only on a region such as a gate driver circuit or a source driver circuit. Or part of the source driver circuit (
For example, the laser beam may be irradiated only to the area of the analog switch. As a result, crystallization of silicon can be improved only in a region where the circuit needs to operate at high speed. Since it is not necessary to operate the pixel region at high speed, the pixel circuit can be operated without any problem even if the crystallinity is not improved. Since there is less area to improve crystallinity,
The manufacturing process can be shortened, the throughput can be improved, and the manufacturing cost can be reduced. Since the number of manufacturing apparatuses required is small, the manufacturing cost can be reduced.

Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. Accordingly, a transistor with small variations in characteristics, size, shape, and the like, high current supply capability, and small size can be manufactured. When these transistors are used, low power consumption of the circuit or high integration of the circuit can be achieved.

Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO
A transistor having a compound semiconductor or an oxide semiconductor such as a thin film transistor obtained by thinning the compound semiconductor or oxide semiconductor can be used. Accordingly, the manufacturing temperature can be lowered, and for example, the transistor can be manufactured at room temperature. As a result, the transistor can be formed directly on a substrate having low heat resistance, such as a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors can be used not only for a channel portion of a transistor but also for other purposes.
For example, these compound semiconductors or oxide semiconductors can be used as resistance elements, pixel electrodes, and transparent electrodes. Furthermore, since these can be formed or formed simultaneously with the transistor, cost can be reduced.

Alternatively, a transistor formed using an inkjet method or a printing method can be used. By these, it can manufacture at room temperature, manufacture at a low vacuum degree, or can manufacture on a large sized board | substrate. Since the transistor can be manufactured without using a mask (reticle), the layout of the transistor can be easily changed. Furthermore, since there is no need to use a resist,
Material costs are reduced and the number of processes can be reduced. Further, since a film is formed only on a necessary portion, the material is not wasted and cost can be reduced as compared with a manufacturing method in which etching is performed after film formation on the entire surface.

Alternatively, a transistor including an organic semiconductor or a carbon nanotube can be used. Thus, a transistor can be formed over a substrate that can be bent. Therefore, it can be strong against impact.

In addition, transistors with various structures can be used. For example, a MOS transistor, a junction transistor, a bipolar transistor, or the like can be used as the transistor. By using a MOS transistor, the size of the transistor can be reduced. Therefore, a large number of transistors can be mounted. By using a bipolar transistor, a large current can flow. Therefore, the circuit can be operated at high speed.

Note that a MOS transistor, a bipolar transistor, or the like may be formed over one substrate. Thereby, low power consumption, downsizing, high-speed operation, and the like can be realized.

  In addition, various transistors can be used.

Note that the transistor can be formed using various substrates. The kind of board | substrate is not limited to a specific thing. As the substrate, for example, single crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood substrate, cloth substrate (natural fiber (silk, cotton, hemp), synthetic fiber) (Including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foils, etc. can be used. . Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. Alternatively, a transistor may be formed using a certain substrate, and then the transistor may be transferred to another substrate, and the transistor may be disposed on another substrate. As a substrate to which the transistor is transferred, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), Use synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foils, etc. Can do. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. Alternatively, a transistor may be formed using a certain substrate, and the substrate may be polished and thinned. As substrates to be polished, single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, hemp), synthetic fibers) (Including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates,
A stainless steel substrate, a substrate having stainless steel still, or the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. By using these substrates, it is possible to form a transistor with good characteristics, a transistor with low power consumption, manufacture a device that is not easily broken, impart heat resistance, reduce weight, or reduce thickness.

Note that the structure of the transistor can take a variety of forms. It is not limited to a specific configuration. For example, a multi-gate structure having two or more gate electrodes may be used. When the multi-gate structure is employed, the channel regions are connected in series, so that a plurality of transistors are connected in series. With the multi-gate structure, the off-state current can be reduced and the reliability can be improved by improving the withstand voltage of the transistor. Or, when operating in the saturation region, the drain-source current does not change much even when the drain-source voltage changes, and the slope of the voltage / current characteristic is flat due to the multi-gate structure. it can. By utilizing the characteristic that the slope of the voltage / current characteristic is flat, an ideal current source circuit and an active load having a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. As another example, a structure in which gate electrodes are arranged above and below a channel may be used. With the structure in which the gate electrodes are arranged above and below the channel, the channel region increases, so that the current value can be increased or the S value can be reduced because a depletion layer can be easily formed. When gate electrodes are provided above and below a channel, a structure in which a plurality of transistors are connected in parallel is obtained.

Alternatively, a structure in which a gate electrode is disposed over a channel region may be employed, or a structure in which a gate electrode is disposed under a channel region may be employed. Alternatively, a normal stagger structure or an inverted stagger structure may be used, the channel region may be divided into a plurality of regions, the channel regions may be connected in parallel, or the channel regions may be connected in series. Good. Alternatively, a source electrode or a drain electrode may overlap with the channel region (or a part thereof). With the structure in which the source electrode or the drain electrode overlaps with the channel region (or part thereof), it is possible to prevent electric charges from being accumulated in part of the channel region and unstable operation. Alternatively, an LDD region may be provided. By providing the LDD region, the off-state current can be reduced or the reliability can be improved by improving the withstand voltage of the transistor. Alternatively, by providing an LDD region, when operating in the saturation region, even if the drain-source voltage changes, the drain-source current does not change so much and the slope of the voltage-current characteristic is flat. be able to.

Note that various types of transistors can be used, and the transistor can be formed using various substrates. Therefore, all the circuits necessary for realizing a predetermined function may be formed on the same substrate. For example, all circuits necessary for realizing a predetermined function may be formed using a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, and are formed using various substrates. May be. Since all the circuits necessary to realize a given function are formed using the same substrate, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connection points with circuit components. Can be planned. Alternatively, a part of the circuit necessary for realizing the predetermined function is formed on a certain substrate, and another part of the circuit necessary for realizing the predetermined function is formed on another substrate. It may be. That is, not all the circuits necessary for realizing a predetermined function may be formed using the same substrate. For example, a part of a circuit necessary for realizing a predetermined function is formed using a transistor over a glass substrate, and another part of a circuit required for realizing a predetermined function is a single crystal substrate. An IC chip formed of a transistor formed using a single crystal substrate may be connected to a glass substrate by COG (Chip On Glass), and the IC chip may be disposed on the glass substrate. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed board. As described above, since a part of the circuit is formed on the same substrate, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connection points with circuit components. Alternatively, since the power consumption of a circuit with a high drive voltage and a high drive frequency is high, such a circuit is not formed on the same substrate. Instead, for example, a single crystal substrate is used. If a circuit for that portion is formed and an IC chip constituted by the circuit is used, an increase in power consumption can be prevented.

One pixel means one element whose brightness can be controlled. Therefore, as an example, one pixel represents one color element, and brightness is expressed by one color element. Therefore, at that time, in the case of a color display device composed of R (red), G (green), and B (blue) color elements, the minimum unit of an image is an R pixel, a G pixel, and a B pixel. It is assumed to be composed of three pixels. Note that the color elements are not limited to three colors, and three or more colors may be used, or colors other than RGB may be used. For example, RGBW (W is white) may be added by adding white. Alternatively, one or more colors such as yellow, cyan, magenta, emerald green, vermilion, and the like may be added to RGB. Alternatively, for example, a color similar to at least one of RGB may be added to RGB. For example, R, G, B1, and B2 may be used. B1 and B2 are both blue, but have slightly different frequencies. Similarly, R1, R2, G, and B may be used. By using such color elements, it is possible to perform display closer to the real thing. By using such color elements, power consumption can be reduced. As another example, when brightness is controlled using a plurality of areas for one color element, one area may be set as one pixel. Therefore, as an example, when performing area gradation or sub-pixel (
Sub-pixels), there are multiple brightness control areas for each color element,
The gradation is expressed as a whole, but one area for controlling the brightness may be one pixel. Therefore, in that case, one color element is composed of a plurality of pixels. Or, even if there are multiple areas for controlling brightness in one color element,
One color element may be one pixel. Therefore, in that case, one color element is composed of one pixel. Alternatively, when the brightness is controlled using a plurality of areas for one color element, the size of the area contributing to display may differ depending on the pixel. Alternatively, the viewing angle may be widened by slightly varying the signal supplied to each of the areas where the brightness is controlled, which is plural for each color element. That is, 1
For one color element, the potentials of the pixel electrodes in each of the plurality of regions may be different from each other. As a result, the voltage applied to the liquid crystal molecules is different for each pixel electrode. Therefore, the viewing angle can be widened.

In addition, when it is explicitly described as one pixel (for three colors), it is assumed that three pixels of R, G, and B are considered as one pixel. When it is explicitly described as one pixel (for one color), it is assumed that when there are a plurality of areas for one color element, they are considered as one pixel.

Note that the pixels may be arranged (arranged) in a matrix. Here, the arrangement (arrangement) of pixels in a matrix includes a case where pixels are arranged side by side in a vertical direction or a horizontal direction, or a case where they are arranged on a jagged line. Therefore, for example, when full-color display is performed with three color elements (for example, RGB), the case where stripes are arranged or the case where dots of three color elements are arranged in a delta arrangement is included. Furthermore, the case where a Bayer is arranged is included. The color elements are not limited to three colors, and may be more than that, for example, RGBW (W is white), or RGB in which one or more colors of yellow, cyan, magenta, etc. are added. The size of the display area may be different for each dot of the color element. Thereby, it is possible to reduce power consumption or extend the life of the display element.

Note that an active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used.

In the active matrix system, not only transistors but also various active elements (active elements, nonlinear elements) can be used as active elements (active elements, nonlinear elements). For example, MIM (Metal Insulator Metal) or TFD
It is also possible to use (Thin Film Diode) or the like. Since these elements have few manufacturing steps, manufacturing cost can be reduced or yield can be improved. Further, since the size of the element is small, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

Note that as a method other than the active matrix method, a passive matrix type that does not use active elements (active elements, nonlinear elements) can be used. Since no active element (active element or nonlinear element) is used, the number of manufacturing steps is small, and manufacturing cost can be reduced or yield can be improved. Since an active element (an active element or a non-linear element) is not used, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

Note that a transistor is an element having at least three terminals including a gate, a drain, and a source. The transistor has a channel region between the drain region and the source region, and the drain region, the channel region, and the source region. A current can be passed through. Here, since the source and the drain vary depending on the structure and operating conditions of the transistor, it is difficult to limit which is the source or the drain. Therefore, in this document (the specification, the claims, the drawings, and the like), a region functioning as a source and a drain may not be referred to as a source or a drain. In that case, as an example, there are cases where they are referred to as a first terminal and a second terminal, respectively. Alternatively, they may be referred to as a first electrode and a second electrode, respectively. Alternatively, they may be referred to as a source region and a drain region.

Note that the transistor may be an element having at least three terminals including a base, an emitter, and a collector. Similarly in this case, the emitter and the collector may be referred to as a first terminal and a second terminal.

Note that a gate refers to the whole or part of a gate electrode and a gate wiring (also referred to as a gate line, a gate signal line, a scan line, a scan signal line, or the like). A gate electrode refers to a portion of a conductive film that overlaps with a semiconductor forming a channel region with a gate insulating film interposed therebetween. Note that a part of the gate electrode is an LDD (Lightly Dow).
In some cases, it may overlap with a ped drain region or a source region (or drain region) through a gate insulating film. A gate wiring is a wiring for connecting the gate electrodes of each transistor, a wiring for connecting the gate electrodes of each pixel, or a wiring for connecting the gate electrode to another wiring. Say.

However, the portion that functions as the gate electrode and also functions as the gate wiring (region,
There are also conductive films, wirings, and the like. Such a portion (region, conductive film, wiring, or the like) may be called a gate electrode or a gate wiring. That is, the gate electrode and the gate wiring are
There are areas that cannot be clearly distinguished. For example, when a part of the extended gate wiring and the channel region overlap with each other, the portion (region, conductive film, wiring, etc.) functions as a gate wiring. It is functioning. Therefore, such a portion (region, conductive film, wiring, or the like) may be called a gate electrode or a gate wiring.

Note that a portion (a region, a conductive film, a wiring, or the like) formed using the same material as the gate electrode and connected to form the same island (island) as the gate electrode may be called a gate electrode. Similarly, a portion (a region, a conductive film, a wiring, or the like) formed using the same material as the gate wiring and connected by forming the same island (island) as the gate wiring may be called a gate wiring. In a strict sense, such a portion (region, conductive film, wiring, or the like) may not overlap with the channel region or may not have a function of being connected to another gate electrode. However, due to the specifications at the time of manufacturing, etc., a portion (region, conductive film, wiring, etc.) that is formed of the same material as the gate electrode or gate wiring and forms the same island (island) as the gate electrode or gate wiring. ) Therefore, such a portion (region, conductive film, wiring, or the like) may also be referred to as a gate electrode or a gate wiring.

Note that, for example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected to each other with a conductive film formed using the same material as the gate electrode. Such a portion (region, conductive film, wiring, or the like) is a portion (region, conductive film, wiring, or the like) for connecting the gate electrode and the gate electrode, and may be called a gate wiring. These transistors can be regarded as a single transistor, and may be referred to as a gate electrode. That is, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate electrode or gate wiring and connected by forming the same island (island) as the gate electrode or gate wiring.
May be called a gate electrode or a gate wiring. Further, for example, a conductive film in a portion where the gate electrode and the gate wiring are connected and formed of a material different from the gate electrode or the gate wiring may be referred to as a gate electrode. You may call it.

Note that a gate terminal refers to a part of a portion (region, conductive film, wiring, or the like) of a gate electrode or a portion (region, conductive film, wiring, or the like) electrically connected to the gate electrode. .

Note that in the case of calling a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, or the like, the gate of the transistor may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scanning line, and the scanning signal line are simultaneously formed with the wiring formed in the same layer as the gate of the transistor, the wiring formed of the same material as the gate of the transistor, or the gate of the transistor. It may mean a deposited wiring. Examples include a storage capacitor wiring, a power supply line, a reference potential supply wiring, and the like.

Note that a source refers to a source region, a source electrode, and a source wiring (a source line, a source signal line,
Data line, data signal line, etc.) or a part of them. A source region refers to a semiconductor region containing a large amount of P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic). Therefore, a region containing a little P-type impurity or N-type impurity, so-called LDD (Lightly Doped Drain) region,
It is not included in the source area. A source electrode refers to a portion of a conductive layer which is formed using a material different from that of a source region and is electrically connected to the source region. However, the source electrode may be referred to as a source electrode including the source region. The source wiring is a wiring for connecting the source electrodes of the transistors, a wiring for connecting the source electrodes of each pixel, or a wiring for connecting the source electrode to another wiring. Say.

However, the part that functions as a source electrode and also functions as a source wiring (
Regions, conductive films, wirings, etc.). Such a portion (region, conductive film, wiring, or the like) may be called a source electrode or a source wiring. That is, there is a region where the source electrode and the source wiring cannot be clearly distinguished. For example, in the case where a part of the source wiring that is arranged to extend and the source region overlap, the part (region, conductive film,
Wiring or the like) functions as a source wiring, but also functions as a source electrode. Therefore, such a portion (region, conductive film, wiring, or the like) may be called a source electrode or a source wiring.

Note that a portion (region, conductive film, wiring, or the like) formed of the same material as the source electrode and connected to form the same island (island) as the source electrode, or a portion (region) connecting the source electrode and the source electrode , Conductive film, wiring, etc.) may also be called source electrodes. Further, a portion overlapping with the source region may be called a source electrode. Similarly, the region that is formed of the same material as the source wiring and connected to form the same island (island) as the source wiring,
You may call it source wiring. Such a portion (region, conductive film, wiring, or the like) may not have a function of connecting to another source electrode in a strict sense. However, there are portions (regions, conductive films, wirings, and the like) that are formed of the same material as the source electrode or the source wiring and connected to the source electrode or the source wiring because of the specifications at the time of manufacture. Therefore, such a portion (region, conductive film, wiring, or the like) may also be called a source electrode or a source wiring.

Note that, for example, a conductive film in a portion where the source electrode and the source wiring are connected and formed using a material different from that of the source electrode or the source wiring may be referred to as a source electrode or a source wiring. You may call it.

Note that a source terminal refers to a part of a source region, a source electrode, or a portion (region, conductive film, wiring, or the like) electrically connected to the source electrode.

In addition, when calling a source wiring, a source line, a source signal line, a data line, a data signal line, etc.,
In some cases, the source (drain) of the transistor is not connected to the wiring. In this case, the source wiring, the source line, the source signal line, the data line, and the data signal line are the wiring formed in the same layer as the source (drain) of the transistor and the wiring formed of the same material as the source (drain) of the transistor. Alternatively, it may mean a wiring formed simultaneously with the source (drain) of the transistor. Examples include a storage capacitor wiring, a power supply line, a reference potential supply wiring, and the like.

  The drain is the same as the source.

Note that a semiconductor device refers to a device having a circuit including a semiconductor element (a transistor, a diode, a thyristor, or the like). Furthermore, a device that can function by utilizing semiconductor characteristics may be called a semiconductor device. Alternatively, a device including a semiconductor material is referred to as a semiconductor device.

Note that a display element is an optical modulation element, a liquid crystal element, a light emitting element, an EL element (an organic EL element,
An inorganic EL element or an EL element including an organic substance and an inorganic substance), an electron emitting element, an electrophoretic element, a discharge element, a light reflecting element, a light diffractive element, a digital micromirror device (DMD), and the like. However, it is not limited to this.

Note that a display device refers to a device having a display element. Note that the display device may include a plurality of pixels including a display element. Note that the display device may include a peripheral driver circuit that drives a plurality of pixels. Note that the peripheral driver circuit that drives the plurality of pixels may be formed over the same substrate as the plurality of pixels. The display device includes a peripheral drive circuit arranged on the substrate by wire bonding, bumps, or the like, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. May be.
Note that the display device may include a flexible printed circuit (FPC) to which an IC chip, a resistor, a capacitor, an inductor, a transistor, and the like are attached. The display device is connected via a flexible printed circuit (FPC) or the like, and a printed wiring board (P) to which an IC chip, a resistor element, a capacitor element, an inductor, a transistor, and the like are attached.
WB) may be included. Note that the display device may include an optical sheet such as a polarizing plate or a retardation plate. Note that the display device may include a lighting device, a housing, a voice input / output device, a light sensor, and the like. Here, the illumination device such as the backlight unit includes a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, a light source (LED, cold cathode tube, etc.), a cooling device (water-cooled,
Air-cooled type) may be included.

Note that the lighting device refers to a device having a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflective sheet, a light source (LED, cold cathode tube, hot cathode tube, etc.), a cooling device, and the like.

Note that a light-emitting device refers to a device having a light-emitting element or the like. In the case where the display element includes a light-emitting element, the light-emitting device is one example of the display device.

The reflection device refers to a device having a light reflection element, a light diffraction element, a light reflection electrode, and the like.

Note that a liquid crystal display device refers to a display device having a liquid crystal element. Liquid crystal display devices include
There are direct view type, projection type, transmission type, reflection type, transflective type and the like.

Note that a driving device refers to a device having a semiconductor element, an electric circuit, and an electronic circuit. For example, a transistor that controls input of a signal from a source signal line into a pixel (sometimes referred to as a selection transistor or a switching transistor), a transistor that supplies a voltage or current to a pixel electrode, or a voltage or current to a light-emitting element A transistor or the like for supplying is an example of a driving device. Further, a circuit for supplying a signal to the gate signal line (sometimes referred to as a gate driver or a gate line driver circuit) and a circuit for supplying a signal to the source signal line (sometimes referred to as a source driver or source line driver circuit). ) Etc. is an example of a drive device.

Note that a display device, a semiconductor device, a lighting device, a cooling device, a light-emitting device, a reflecting device, a driving device, and the like may overlap with each other. For example, the display device may include a semiconductor device and a light-emitting device. Alternatively, the semiconductor device may include a display device and a driving device.

In addition, when it is explicitly described that B is formed on A or B is formed on A, it is limited that B is formed in direct contact with A. Not. The case where it is not in direct contact, that is, the case where another object is interposed between A and B is also included.
Here, A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

Therefore, for example, when it is explicitly described that the layer B is formed on the layer A (or on the layer A), the layer B is formed in direct contact with the layer A. And the case where another layer (for example, layer C or layer D) is formed in direct contact with layer A, and layer B is formed in direct contact therewith. In addition, another layer (for example, layer C, layer D, etc.) may be a single layer or multiple layers.

Furthermore, the same applies to the case where B is explicitly described as being formed above A, and is not limited to the direct contact of B on A. This includes the case where another object is interposed in. Therefore, for example, the layer B is formed above the layer A.
In this case, the layer B is formed in direct contact with the layer A, and another layer (for example, the layer C or the layer D) is formed in direct contact with the layer A. And the case where the layer B is formed in direct contact with. In addition, another layer (for example, layer C, layer D, etc.) may be a single layer or multiple layers.

In addition, when it is explicitly described that B is formed in direct contact with A, it includes a case in which B is formed in direct contact with A. It shall not be included when an object is present.

  The same applies to the case where B is below A or B is below A.

In addition, about what is explicitly described as singular, it is preferable that it is singular. However, the present invention is not limited to this, and a plurality of them is also possible. Similarly, a plurality that is explicitly described as a plurality is preferably a plurality. However, the present invention is not limited to this, and the number can be singular.

According to the present invention, the viewing angle characteristics can be improved as compared with the conventional one while maintaining the performance of the display device. Alternatively, according to the present invention, a highly reliable display device can be provided. Alternatively, according to the present invention, a display device with high contrast can be provided. Alternatively, a lightweight display device can be provided by the present invention. Alternatively, according to the present invention, a display device with a small size can be provided. Alternatively, according to the present invention, a display device with high luminance can be provided. Alternatively, according to the present invention, a display device with low power consumption can be provided. Alternatively, according to the present invention, a display device with a high aperture ratio can be provided. Alternatively, according to the present invention, a display device with low manufacturing cost can be provided.

4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a voltage divider element included in a pixel circuit of a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 4A and 4B illustrate an example of a top surface layout of a pixel of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B illustrate an example of a top surface layout of a pixel of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. 4A and 4B each illustrate a pixel circuit of a display device of the present invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention.

(Embodiment 1)
In this embodiment mode, a structure of a pixel circuit included in the liquid crystal display device of the present invention and an operation of the pixel circuit will be described with reference to drawings. The pixel circuit of the liquid crystal display device of the present invention includes a plurality of liquid crystal elements in one pixel, and has a configuration in which a voltage applied to each of these liquid crystal elements is different. Specifically, one or both of a capacitor element and a resistor element connected to the liquid crystal element is provided to vary the voltage applied to the liquid crystal element.

However, the display element is not limited to a liquid crystal element, and various display elements (for example, a light emitting element (EL
An element (an EL element including an organic substance and an inorganic substance, an organic EL element, an inorganic EL element), an electron-emitting element), an electrophoretic element, or the like can be used.

There are various liquid crystal operation modes to which the present embodiment can be applied. For example, TN
(Twisted Nematic) mode, IPS (In-Plane-Switch)
ing) mode, FFS (Fringe Field Switching) mode, M
VA (Multi-domain Vertical Alignment) mode, P
VA (Patterned Vertical Alignment), CPA (Con
tin Pinus Alignment) mode, ASM (Axial)
ly Symmetric Aligned Micro-cell) mode, OCB (
(Optical Compensated Birefringence) mode, FL
C (Ferroelectric Liquid Crystal) mode, AFLC (
AntiFerroelectric Liquid Crystal). However, it is not limited to this. Note that liquid crystal to which the CPA mode is applied is an ASV (Advanced
d Super View) liquid crystal.

FIG. 1A illustrates an example of a structure of one pixel included in the liquid crystal display device of the present invention. Pixel 100
Are a first switch 101, a second switch 102, a first liquid crystal element 103, a second liquid crystal element 104, a third liquid crystal element 105, a first capacitor element 106, and a second capacitor element. A capacitor 107.

The first wiring 108 is connected to the first electrode of the first liquid crystal element 103 and the first electrode of the first capacitor 106 through the first switch 101. Second wiring 109 and second wiring
The first electrode of the liquid crystal element 104 and the first electrode of the second capacitor element 107 are connected via the second switch 102. The second electrode of the first capacitor 106 is the second capacitor 1
The second electrode 07 and the first electrode of the third liquid crystal element 105 are connected.

The second electrodes of the first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 are connected to the common electrode 111.

The first wiring 108 and the second wiring 109 function as signal lines. Accordingly, an image signal is normally supplied to the first wiring 108 and the second wiring 109. However, it is not limited to this. A constant signal may be supplied regardless of the image.

The first switch 101 and the second switch 102 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, a case where transistors are used as the first switch 101 and the second switch 102 will be described (
(See FIG. 1B). In the case of using a transistor, the polarity may be a P-channel type or an N-channel type. For example, an N-channel transistor is assumed to be conductive between a source and a drain when a gate-source voltage (V _gs ) exceeds a threshold voltage (V _th ). Note that the drain-source voltage of the transistor is denoted as V _ds .

FIG. 1B shows a case where an N-channel transistor is used as a switch, and FIG. 1C shows a case where a P-channel transistor is used as a switch. 1B and 1C, the first switch 101N (or the first switch 101P) and the second switch 10
The gate of 2N (or the second switch 102P) is connected to the third wiring 110. The third wiring 110 functions as a scanning line.

Note that two scanning lines may be provided as shown in FIG. The circuit shown in FIG. 49 is the same as the circuit shown in FIG. 8 in which two signal lines are provided.

Note that the case where a P-channel transistor is used as a switch is shown only in FIG. 1, but the present invention is not limited to this. In other drawings, at least one of the transistors can be replaced with a P-channel transistor.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

Video signals are input to the first wiring 108 and the second wiring 109. A scanning signal is input to the third wiring 110. The scanning signal is an H level or L level digital voltage signal. When the first switch 101 is an N-channel transistor, the scanning signal H
The level is a potential at which the first switch 101 and the second switch 102 can be turned on, and the L level of the scanning signal is a potential at which the first switch 101 and the second switch 102 can be turned off. Alternatively, when the first switch 101 and the second switch 102 are P-channel transistors, the H level of the scanning signal is a potential that can turn off the first switch 101 and the second switch 102, and the L level of the scanning signal Are the first switch 101 and the second switch 1
This is a potential at which 02 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be a current. The current of the video signal may be analog or digital. The video signal is preferably at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 100 will be described separately for the case where the first switch 101 and the second switch 102 are on and the case where the first switch 101 and the second switch 102 are off.

When the first switch 101 is on, the first wiring 108, the first electrode (pixel electrode) of the first liquid crystal element 103, and the first electrode of the first capacitor 106 are connected to each other. Electrically connected. When the second switch 102 is on, the second wiring 109, the first electrode (pixel electrode) of the second liquid crystal element 104, and the first electrode of the second capacitor element 107 are connected. Electrically connected. Accordingly, the video signal is transmitted from the first wiring 108 to the first liquid crystal element 103.
The first electrode (pixel electrode) and the first electrode of the first capacitor 106 are input. Alternatively, the video signal is input from the second wiring 109 to the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitor 107. Therefore, the potential V ₁₀₃ of the signal input to the first liquid crystal element 103 is approximately equal to the potential input from the first wiring 108, and the second potential
The potential V ₁₀₄ of the signal input to the liquid crystal element 104 is approximately equal to the potential input from the second wiring 109. Further, the potential V ₁₀₅ of the first electrode of the third liquid crystal element 105 has a value divided by the first capacitor element 106 and the second capacitor element 107. Here, the capacitance value of the first capacitor element 106 is C ₁₀₆ , and the capacitance value of the second capacitor element 107 is C ₁₀₇ . Then, V ₁₀₅ = ΔV × C ₁₀₇ / (C ₁₀₆ + C ₁₀₇ ) + V ₁₀₃ . here,
ΔV = V ₁₀₄ −V ₁₀₃ . However, this is a case where each capacitor element has no initial charge.
Here, when C ₁₀₆ and C ₁₀₇ have the same size, V ₁₀₅ is V ₁₀₃ and V _10.
Half of the sum of ₄ Here, when the potential of the common electrode is 0, the voltage applied to the first liquid crystal element is V ₁₀₃ , the voltage applied to the second liquid crystal element is V ₁₀₄ , and the voltage applied to the third liquid crystal element is V ₁₀₅ = (V ₁₀₃ + V ₁₀₄ ) / 2. When the potential of the signal input from the first wiring 108 and the signal input from the second wiring 109 are different, the voltage applied to each liquid crystal element can be different, so that the alignment states are different. Can be made. Therefore, it is preferable that the signal input from the first wiring 108 and the signal input from the second wiring 109 have different potentials.

In this manner, by supplying two signals having different potentials and using a capacitor, the voltage can be divided inside the pixel, and an intermediate voltage (third voltage) between the two signals can be generated.
The liquid crystal can be easily controlled by applying the third voltage to the third liquid crystal element 105. Further, the third voltage is a voltage between the voltage applied to the first liquid crystal element 103 and the voltage applied to the second liquid crystal element 104. Therefore, an appropriate gradation can be displayed regardless of the gradation to be displayed. In addition, even when the polarity of the image signal is positive (when the image signal is higher than the common electrode) or when it is negative (when the image signal is lower than the common electrode), an appropriate gradation is displayed. be able to.

Furthermore, the third liquid crystal element 105 can be controlled by generating a third voltage while suppressing an increase in the number of scan lines, signal lines, transistors, and the like. This can increase the aperture ratio,
Power consumption can be reduced. Further, since the pixel layout can be arranged with a margin, defects such as a short circuit that may occur due to dust generated in the manufacturing process can be reduced, and the yield can be improved. As a result, the manufacturing cost can be reduced. Further, since the third liquid crystal element 105 can be controlled without newly providing a wiring functioning as a signal line for controlling the third liquid crystal element, the number of connection points between the glass substrate and the external drive circuit is increased. do not do. As a result, high reliability can be maintained.

Note that the capacitance values of the first capacitor element 106 and the second capacitor element 107 are preferably substantially equal. When the capacitance values of the two capacitor elements are approximately equal, the divided potential becomes an intermediate value of the potential supplied to the two capacitor elements. If there is a difference in capacitance value, it will be biased to either potential, and the liquid crystal elements cannot be controlled uniformly. Therefore, it is desirable that the capacitance value of the first capacitor element 106 and the capacitance value of the second capacitor element 107 are substantially equal. However, it is not limited to this.

When the first switch 101 is off, the first wiring 108, the first electrode (pixel electrode) of the first liquid crystal element 103, and the first electrode of the first capacitor 106 are connected to each other. Electrically shut off. When the second switch 102 is off, the second wiring 109, the first electrode (pixel electrode) of the second liquid crystal element 104, and the first electrode of the second capacitor 107 are connected to each other. Electrically shut off. Accordingly, the first electrode of the first liquid crystal element 103 and the first capacitor element 106 are used.
The first electrode, the first electrode of the second liquid crystal element 104, and the first electrode of the second capacitor element 107 are in a floating state. The third liquid crystal element 105 is connected to the first liquid crystal element 103 via the first capacitor element 106. However, the charge stored in the third liquid crystal element 105 does not leak to the first liquid crystal element 103 due to the charge conservation law. Similarly,
The third liquid crystal element 105 is connected to the second liquid crystal element 104 through the second capacitor element 107. However, due to the charge conservation law, the charge stored in the third liquid crystal element 105 is
There is no leakage toward the second liquid crystal element 104. Accordingly, the first to third liquid crystal elements hold the potential of the signal input immediately before.

Note that the first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 have transmittance in accordance with the video signal.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Each liquid crystal element may be divided into a plurality of parts. For example, the case where the third liquid crystal element 105 is divided into two parts, that is, a third liquid crystal element 105a and a fourth liquid crystal element 105b, is illustrated in FIG.
Shown in Similarly, the first liquid crystal element 103 and the second liquid crystal element 104 may be divided into a plurality of parts. The same applies to the drawings other than FIG.

Note that in FIGS. 1 and 11, when the first switch 101 and the second switch 102 are transistors, their gates are connected to the third wiring 110. But,
It is not limited to this. The gate of the first switch 101 and the gate of the second transistor may be connected to different wirings (see FIG. 49). The same applies to the drawings other than FIGS. 1 and 11.

1 and 11, the first switch 101 and the second switch 102 are connected to different signal lines, but the present invention is not limited to this. As shown in FIG. 8 or FIG. 17, the first switch 101 and the second switch 102 may be connected to the same wiring. The same applies to the drawings other than FIGS. 1 and 11.

The liquid crystal element exhibits voltage holding characteristics, but the holding ratio is not 100%. Therefore, in FIGS. 1 and 11, a voltage may be held by disposing a capacitor element serving as a storage capacitor (hereinafter simply referred to as a storage capacitor) in each liquid crystal element. The storage capacitor may be disposed for all liquid crystal elements, or may be disposed only for some liquid crystal elements. The storage capacitor is disposed between each pixel electrode and a wiring functioning as a capacitor line connected to the pixel electrode. Each storage capacitor may be connected to a different capacitor line or may be connected to the same capacitor line. Alternatively, some storage capacitors may be connected to the same capacitor line, and other storage capacitors may be connected to different capacitor lines. Further, the capacitor line may be shared with another pixel. For example, the pixels in the previous row and the pixels in the next row can be shared. By sharing the capacitor line between different pixels, the number of wirings can be reduced and the aperture ratio can be improved. Further, the capacitor line may be shared with the scanning line. When the capacitor line is shared with the scanning line, the number of wirings can be reduced and the aperture ratio can be improved. When the capacitor line is shared with the scanning line, it is desirable to use the scanning line of the pixel in the adjacent row (pixel in the previous row). This is because the selection of signals has already been completed for the (i-1) th row (the previous row) when the pixels of the i-th row are selected. Note that in the case where the liquid crystal is IPS, FFS, or the like, the common electrode is disposed on a substrate over which a transistor is formed. Therefore, the capacitor line may be shared with the common electrode. When the capacitor line is shared with the common electrode, the number of wirings can be reduced and the aperture ratio can be improved. In addition,
The storage capacitor may be divided into a plurality of parts as in the liquid crystal element in FIG. The same applies to the drawings other than FIGS. 1 and 11.

Next, a display device having the above-described pixel 100 of FIG. 1 will be described with reference to FIG.

The display device includes a signal line driver circuit 1911, a scan line driver circuit 1912, and a pixel portion 1913. In the pixel portion 1913, first wirings S <b> 1 </ b> _ <b> 1 to Sm_ <b> 1, second wirings S <b> 1 </ b> _ <b> 2 to Sm_ <b> 2, and the scanning line driving circuit 19 are arranged extending from the signal line driver circuit 1911 in the column direction.
12 has third wirings G1 to Gn arranged extending in the row direction, and pixels 1914 arranged in a matrix. The first and second wirings function as signal lines. The third wiring functions as a scanning line. Each pixel 1914 includes a first wiring Sj_1 (signal line S1
_1 to Sm_1), the second wiring Sj_2 (any one of the signal lines S1_2 to Sm_2), and the third wiring Gi (any one of the scanning lines G1 to Gn). .

Note that the first wiring Sj_1, the second wiring Sj_2, and the third wiring Gi correspond to the first wiring 108, the second wiring 109, and the third wiring 110 in FIG. 1, respectively.

When a row of pixels to be operated is selected by a signal output from the scan line driver circuit 1912, the pixels belonging to the same row are selected at the same time. The video signal output from the signal line driver circuit 1911 is written to the pixel in the selected row. At this time, a potential corresponding to the luminance data of each pixel is supplied to the first wirings S1_1 to Sm_1 and the second wirings S1_2 to Sm_2.

For example, when the data writing period of the i-th row is finished, the signal is written to the pixel belonging to the i + 1-th row. Then, the pixel that has completed the data writing period in the i-th row has a transmittance corresponding to the signal.

Note that a plurality of signal line driver circuits 1911 or scanning line driver circuits 1912 may be provided. For example, the first wiring Sj_1 (any one of the signal lines S1_1 to Sm_1)
May be driven by the first signal line driver circuit, and the second wiring Sj_2 (any one of the signal lines S1_2 to Sm_2) may be driven by the second signal line driver circuit. In that case, the pixel portion 191
The first signal line drive circuit and the second signal line drive circuit may be arranged above and below the 3. For example, a first signal line driver circuit is disposed on one side on the main surface of the substrate, and a second signal line driver circuit is disposed on the other side opposite to each other, and is sandwiched between two signal line driver circuits. Pixel area 1 in the area
913 may be arranged.

Note that the polarity of the voltage applied to the pixel electrode is inverted with respect to the potential of the common electrode (common potential) in the liquid crystal capacitor at regular intervals in order to suppress display unevenness such as deterioration of the liquid crystal material and flicker. It is preferable to use inversion driving that is driven. In this specification,
When the potential of the pixel electrode is higher than that of the common electrode, a positive voltage is applied to the liquid crystal capacitor, and when the potential of the counter electrode is higher than that of the pixel electrode, a negative voltage is applied to the liquid crystal capacitor. In addition, an image signal input from the signal line when a positive voltage is applied to the liquid crystal capacitor is used as a positive signal, and an image signal input from the signal line is applied as a negative voltage when a negative voltage is applied. Expressed as a sex signal. Examples of inversion driving include frame inversion driving, source line inversion driving, gate line inversion driving, and dot inversion driving.

The frame inversion driving is a driving method for inverting the polarity of the voltage applied to the liquid crystal capacitor every frame period. Note that one frame period corresponds to a period during which an image for one pixel is displayed, and the period is not particularly limited. The following is preferable.

The source line inversion drive inverts the polarity of the voltage applied to the liquid crystal capacitors belonging to the pixels connected to the same signal line with respect to the liquid crystal capacitors belonging to the pixels connected to the adjacent signal lines, and This is a driving method for performing frame inversion on each pixel. On the other hand, in the gate line inversion drive, the polarity of the voltage applied to the liquid crystal capacitor belonging to the pixel connected to the same wiring functioning as the scanning line is changed with respect to the liquid crystal capacitor belonging to the pixel connected to the adjacent scanning line. Invert
Further, this is a driving method for performing frame inversion on each pixel.

The dot inversion driving is a driving method that inverts the polarity of the voltage applied to the liquid crystal capacitance between adjacent pixels, and is a driving method that combines source line inversion driving and gate line inversion driving.

By the way, the frame inversion drive, the source line inversion drive, the gate line inversion drive,
When dot inversion driving or the like is employed, the potential width required for the image signal written to the signal line is twice that in the case of not performing inversion driving. Therefore, in order to solve this problem, in the case of frame inversion driving or gate line inversion driving, common inversion driving in which the potential of the counter electrode is further inverted may be employed.

Common inversion driving is a driving method in which the potential of the common electrode is changed in synchronization with the polarity inversion applied to the liquid crystal capacitance, and the potential required for the image signal written to the signal line by performing the common inversion driving. The width can be reduced.

One pixel may have a plurality of the pixel configurations described above. For example, one pixel may have a plurality of sub-pixels, and the gradation of one pixel may be expressed using the plurality of sub-pixels. Signal lines connected to different subpixels may be shared between the subpixels. Note that different voltages can be applied to the liquid crystal capacitors belonging to the respective subpixels by supplying different potentials to the capacitor lines connected to the subpixels. In this way
The viewing angle can be further improved by utilizing the difference in the orientation of the liquid crystal in each sub-pixel.

In FIG. 1, the retention capacity is not specified, but it is desirable to arrange the retention capacity as described above. By arranging the storage capacitor, the influence of the leakage current of the liquid crystal element can be reduced, and the potential can be easily held. In addition, the influence of switching noise such as feedthrough can be reduced. Therefore, as an example of the case where the storage capacitor is illustrated, FIG. 16 shows a case where the storage capacitor is arranged in the circuit of FIG.

In FIG. 16, a pixel 400 includes a first switch 401, a second switch 402,
The first liquid crystal element 403, the second liquid crystal element 404, the third liquid crystal element 405, the first capacitor element 406, the second capacitor element 407, the third capacitor element 408, and the fourth Capacitance element 4
09 and a fifth capacitor 417.

The first wiring 410 is connected to the first electrode of the first liquid crystal element 403, the first electrode of the first capacitor element 406, and the first electrode of the second capacitor element 407 through the first switch 401. It is connected to the. The second wiring 411 is connected to the first electrode of the second liquid crystal element 404, the first electrode of the third capacitor element 408, and the first electrode of the fourth capacitor element 409 through the second switch 402. It is connected to the. The second electrode of the first capacitor 406 and the second electrode of the third capacitor 408 are connected to the first electrode of the third liquid crystal element 405 and the first electrode of the fifth capacitor 417. ing. The second electrode of the second capacitor 407 is connected to the fourth wiring 413, and the second electrode of the fourth capacitor 409 is connected to the fifth wiring 414. Fifth capacitive element 417
The second electrode is connected to the sixth wiring 415.

The second electrodes of the first liquid crystal element 403, the second liquid crystal element 404, and the third liquid crystal element 405 are connected to the common electrode 416.

The first wiring 410 and the second wiring 411 function as signal lines. Therefore, the first
In general, an image signal is supplied to the wiring 410 and the second wiring 411. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 412 functions as a scanning line. The fourth wiring 413, the fifth wiring 414, and the sixth wiring 415 function as a capacitor line.

The first switch 401 and the second switch 402 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, a case where transistors are used as the first switch 401 and the second switch 402 will be described.
In the case of using a transistor, the polarity may be a P-channel type or an N-channel type.

FIG. 16B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 401N and the second switch 402N are connected to the third wiring 412. The third wiring 760 functions as a scanning line.

Note that as shown in FIG. 16, a storage capacitor may be disposed in all the liquid crystal elements, but is not limited thereto. For example, as shown in FIG. 7, a storage capacitor may be arranged only in some liquid crystal elements. Each storage capacitor may be connected to a different capacitor line, may be connected to the same capacitor line, or may be connected to a capacitor line that is partly the same and partly different. Also good. Further, the capacitor line may be shared with another pixel. For example, the pixels in the previous row and the pixels in the next row can be shared. If the capacitor line is shared between different pixels, the number of wirings can be reduced and the aperture ratio can be improved. Alternatively, the capacitor line may be shared with the scanning line. When the capacitor line is shared with the scanning line, the number of wirings can be reduced and the aperture ratio can be improved. In the case where the capacitor line is shared with the scanning line, it is preferable to use the scanning line of an adjacent pixel (pixel in the previous row). This is because the selection of signals has already been completed for the (i-1) th row (the previous row) when the pixels of the i-th row are selected. Note that when the liquid crystal is IPS, FFS, or the like, the common electrode is arranged on a substrate over which a transistor is formed. Therefore, the capacitor line may be shared with the common electrode. When the capacitor line is shared with the common electrode, the number of wirings can be reduced and the aperture ratio can be improved.

Note that a constant potential is preferably supplied to the capacitor line. However, it is not limited to this. For example, in FIG. 7, a signal that periodically changes a plurality of times may be supplied to each capacitor line, that is, the fourth wiring 413 and the fifth wiring 414 in one frame period. Then, inverted signals may be applied to each capacitor line, that is, the fourth wiring 413 and the fifth wiring 414. As a result, the effective voltage applied to the first liquid crystal element 404, the second liquid crystal element 403, and the like can be changed.

Note that although FIG. 16 includes two wirings functioning as capacitor lines, the invention is not limited to this. Capacitance lines can be combined into one. Furthermore, the common electrode and the capacitor line can be shared. This is because the common electrode and the capacitor line are not particularly limited except that both need to be kept at the same potential. FIG. 50 shows a diagram in which the capacitor lines are combined into one and the common electrode and the capacitor line are shared. FIG. 50 has the same effect as FIG.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Note that in other drawings such as FIG. 1 described above, the transistors used as the first switch or the second switch are connected to different signal lines, but the present invention is not limited to this. These may be connected to the same signal line. For example, FIG. 8 shows an example in which two signal lines are provided in FIG. 1 and a plurality of scanning lines are provided. Alternatively, an example in which the scanning lines in FIG. 8 are combined into one is shown in FIG.

Note that in FIGS. 8 and 17, it is possible to arrange storage capacitors in different liquid crystal elements as in FIGS. Thus, as an example, FIGS. 18 and 19 show an example in which a storage capacitor is arranged in the first and second liquid crystal elements as in FIG.

Therefore, the contents described in FIG. 1 and FIG. 7 can be applied to FIG. 8, FIG. 16, FIG.

In FIG. 8, a pixel 450 includes a first switch 451, a second switch 452, a first liquid crystal element 453, a second liquid crystal element 454, a third liquid crystal element 455, and a first capacitor. An element 456 and a second capacitor 457 are included.

The first wiring 458 is connected to the first electrode of the first liquid crystal element 453 and the first electrode of the first capacitor 456 through a first switch 451. Also, the first wiring 45
8 and the first electrode of the second liquid crystal element 454 and the first electrode of the second capacitor 457,
The second switch 452 is connected. The second electrode of the first capacitor 456 and the second electrode of the second capacitor 457 are connected to the first electrode of the third liquid crystal element 455.

Note that a transistor can be used as the switch. First switch 451N
Are connected to the second wiring 459. The gate of the second switch 452N is the third
The wiring 460 is connected.

Second electrodes of the first liquid crystal element 453, the second liquid crystal element 454, and the third liquid crystal element 455 are connected to the common electrode 461.

The first wiring 458 functions as a signal line. Therefore, an image signal is usually supplied to the first wiring 458. However, it is not limited to this. A constant signal may be supplied regardless of the image. The second wiring 459 and the third wiring 460 function as scanning lines.

First, the operation of FIGS. 8 and 18 will be considered. First, an active signal is supplied to the third wiring 460, and the second switch 452 is turned on. Here, the active signal means a signal that can turn on the second switch 452. When the second switch 452 is turned on, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the second liquid crystal element 454 and the first electrode of the second capacitor 457. .

Next, the second switch 452 is turned off, an active signal is supplied to the second wiring 459, and the first switch 451 is turned on. Here, the active signal is the second switch 4.
A signal that can turn on 52. Then, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the first liquid crystal element 453 and the first electrode of the first capacitor 456. The video signal supplied at this time is preferably at a different potential from that when the second switch 452 is turned on. When the potentials are different, different voltages can be supplied to the liquid crystal elements, and the viewing angle can be improved.

Note that when the first switch 451 is on, the third liquid crystal element 455 is capacitively coupled to the pixel electrode of the first liquid crystal element 453 through the first capacitor 456. Therefore, the potential of the pixel electrode of the third liquid crystal element 455 changes in accordance with the voltage supplied from the first wiring 458 when the first switch 451 is on.

Similarly, when the first switch 451 is on, the second liquid crystal element 454 is connected to the pixel electrode of the first liquid crystal element 453 through the first capacitor 456 and the second capacitor 457. Capacitive coupling. Accordingly, the potential of the pixel electrode of the second liquid crystal element 454 changes in accordance with the voltage supplied from the first wiring 458 when the first switch 451 is on.

Next, the first switch 451 is turned off, and the potential of each liquid crystal element is held.
By operating in this way, the voltage applied to each liquid crystal element can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. Each transistor can be driven by various methods such as timing for turning on / off each transistor and the potential of a signal line.

Note that in FIG. 18, it is desirable that a constant potential be supplied to each capacitor line.
However, it is not limited to this. For example, a signal that periodically changes a plurality of times may be supplied to each capacitor line, that is, the first capacitor line and the second capacitor line during one frame period. And
Inverted signals may be applied to each capacitor line, that is, the first capacitor line and the second capacitor line. As a result, the effective voltage applied to the first liquid crystal element 453, the second liquid crystal element 454, and the like can be changed. By operating in this way, the potential of each liquid crystal element can be made different. As a result, the viewing angle can be widened.

  Next, the operation of FIGS. 17 and 19 will be considered.

An active signal is supplied to the second wiring 459, and the first switch 451 and the second switch 452 are turned on. Then, the first electrode (pixel electrode) of the first liquid crystal element 453,
A video signal is supplied from the first wiring 458 to the first electrode of the first capacitor 456, the first electrode (pixel electrode) of the second liquid crystal element 454, and the first electrode of the second capacitor 457. Supplied.

At this time, when a transistor is used for the first switch 451 and the second switch 452, on-resistance is generated. The on-resistance of the first switch 451 is desirably higher than the on-resistance of the second switch 452. The high on-resistance of the transistor means that the ratio of the channel width to the channel length L (W / L) is small. In this manner, by increasing the on-resistance of the transistor, the potential of the pixel electrode of each liquid crystal element is determined by the balance of leakage current and the like of each capacitor element and each storage capacitor. Different voltages can be applied to the liquid crystal elements, and the viewing angle can be improved. However, the present invention is not limited to this, and the first switch 451 and the second switch 452 can have substantially the same on-resistance.

Next, the first switch 451 and the second switch 452 are turned off, and the voltage applied to each liquid crystal element is held.

By operating in this way, the voltage applied to each liquid crystal element can be varied. As a result, the viewing angle can be widened. However, the driving method is not limited to this. Each transistor can be driven by various methods such as timing for turning on / off each transistor and the potential of a signal line.

Note that in FIG. 19, it is desirable that a constant potential be supplied to each capacitor line.
However, it is not limited to this. For example, during one frame period, each capacitor line, that is, the first capacitor line 463 and the second capacitor line 465 may be supplied with a signal that periodically changes a plurality of times. Then, inverted signals may be applied to each capacitor line, that is, the first capacitor line 463 and the second capacitor line 465. As a result, the first liquid crystal element 453 and the second liquid crystal element 4
The effective voltage applied to 54 etc. can be changed. By operating in this way, the potential of each liquid crystal element can be made different. As a result, the viewing angle can be widened.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

FIG. 2 shows an example of the configuration of the pixel circuit included in the liquid crystal display device of the present invention, which is different from that shown in FIG. The pixel 150 includes a first switch 151, a second switch 152, a first liquid crystal element 153, a second liquid crystal element 154, a third liquid crystal element 155, a first capacitor element 156, The second capacitor element 157 and the third capacitor element 161.

The first wiring 158 is connected to the first electrode of the first liquid crystal element 153 and the first electrode of the first capacitor 156 through the first switch 151. The second wiring 159 is connected to the first electrode of the second liquid crystal element 154 and the first electrode of the second capacitor 157 through the second switch 152. The second electrode of the first capacitor 156 is the second capacitor 1
The second capacitor 57 and the first electrode of the third capacitor 161 are connected to the third capacitor 1
The second electrode 61 is connected to the first electrode of the third liquid crystal element 155.

The second electrodes of the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 are connected to the common electrode.

The first wiring 158 and the second wiring 159 function as signal lines. Accordingly, an image signal is normally supplied to the first wiring 158 and the second wiring 159. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 160 functions as a scanning line.

The first switch 151 and the second switch 152 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, the case where transistors are used as the first switch 151 and the second switch 152 will be described.
In the case of using a transistor, the polarity may be a P-channel type or an N-channel type.

FIG. 2B shows the case where an N-channel transistor is used as a switch. FIG. 2 (B
), The gates of the first switch 151N and the second switch 152N are connected to the third wiring 110. The third wiring 160 functions as a scanning line.

2 may have two scanning lines as shown in FIG. 49 as in FIG.
Note that a P-channel transistor can be used as a switch.

Video signals are input to the first wiring 158 and the second wiring 159. A scanning signal is input to the third wiring 160. The scanning signal is an H level or L level digital voltage signal. When the first switch 151 and the second switch 152 are N-channel transistors, the H level of the scanning signal is a potential that can turn on the first switch 151 and the second switch 152, and the L level of the scanning signal is the first level. 1 switch 151 and 2nd switch 1
This is a potential at which 52 can be turned off. Alternatively, the first switch 151 and the second switch 15
When 2 is a P-channel transistor, the H level of the scanning signal is a potential at which the first switch 151 and the second switch 152 can be turned off, and the L level of the scanning signal is the first switch 1.
51 and the potential at which the second switch 152 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Or
The video signal may be a current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

Regarding the operation of the pixel 150 in FIG. 2, the first switch 151 and the second switch 1
Description will be made separately for the case where the switch 52 is turned on and the case where the first switch 151 and the second switch 152 are turned off.

When the first switch 151 is on, the first wiring 158, the first electrode (pixel electrode) of the first liquid crystal element 153, and the first electrode of the first capacitor 156 are connected. Electrically connected. When the second switch 152 is on, the second wiring 159, the first electrode (pixel electrode) of the second liquid crystal element 154, and the first electrode of the second capacitor 157 are connected. Electrically connected. Accordingly, the video signal is transmitted from the first wiring 158 to the first liquid crystal element 153.
The first electrode (pixel electrode) and the first electrode of the first capacitor 156 are input to the first electrode (pixel electrode) and the second electrode of the second liquid crystal element 154 from the second wiring 159. Capacitance element 157
To the first electrode. Accordingly, the potential V _{1 of the} signal input to the first liquid crystal element 153.
₅₃ is approximately equal to the potential input from the first wiring 158, and the potential V ₁₅₄ of the signal input to the second liquid crystal element 154 is approximately equal to the potential input from the second wiring 159. Also,
The potential V 161 of the first electrode of the third capacitor ₁₆₁ is _{equal to} the third liquid crystal element 105 in FIG.
It is the same as the first potential _{V 105} of _electrodes, when the _{C 106} and _{C 107} have the same size, the first electrode potential _{V 161} of the third capacitor _{161, V 153} and _{V 154} Is roughly equal to half of the sum of Note that the potential of the first electrode of the third liquid crystal element 155 is set to V ₁₅₅ . Here, when the potential of the common electrode is 0, the voltage applied to the third liquid crystal element 155 is V ₁₅₅ . V ₁₅₅ is a value obtained by voltage division by the third capacitor 161 and the third liquid crystal element 155. In this manner, by using the capacitor, a different voltage can be supplied to the liquid crystal element. Thus, the voltage applied to each liquid crystal element can be made different, and each alignment state can be made different.

In this manner, by supplying two signals having different potentials and using a capacitor, a voltage can be divided inside the pixel to generate a third voltage. The liquid crystal can be easily controlled by applying the third voltage to the third liquid crystal element 105. Further, the third voltage is a voltage between the voltage supplied to the first liquid crystal element 103 and the voltage supplied to the second liquid crystal element 104. Therefore, an appropriate gradation can be displayed regardless of the gradation to be displayed. In addition, even when the polarity of the image signal is positive (when the image signal is higher than the common electrode) or when it is negative (when the image signal is lower than the common electrode), an appropriate gradation is displayed. be able to.

Further, the third liquid crystal element 155 can be controlled by generating a third voltage while suppressing an increase in the number of scan lines, signal lines, transistors, and the like. Thereby, an aperture ratio can be made high and power consumption can be reduced. Further, since the pixel layout can be arranged with a margin, defects such as a short circuit due to dust generated in the manufacturing process can be reduced, and the yield can be improved. As a result, the manufacturing cost can be reduced. Further, since the third liquid crystal element 155 can be controlled without newly providing a signal line, the number of connection points between the glass substrate and the external drive circuit does not increase. As a result, high reliability can be maintained.

When the first switch 151 is off, the first wiring 158, the first electrode (pixel electrode) of the first liquid crystal element 153, and the first electrode of the first capacitor 156 are connected. Electrically shut off. When the second switch 152 is off, the second wiring 159, the first electrode (pixel electrode) of the second liquid crystal element 154, and the first electrode of the second capacitor 157 are connected. Electrically shut off. Accordingly, the first electrode of the first liquid crystal element 153 and the first capacitor 156 are used.
The first electrode, the first electrode of the second liquid crystal element 154, and the first electrode of the second capacitor 157 are in a floating state. The third liquid crystal element 155 is different from the first liquid crystal element 153 in the first.
The capacitor element 156 and the third capacitor element 161 are connected to each other. However, the charge stored in the third liquid crystal element 105 does not leak into the first liquid crystal element 153 due to the law of conservation of charge. The first liquid crystal element 153 is connected through a second capacitor element 157. However, due to the charge conservation law, the charge stored in the third liquid crystal element 155 is the second liquid crystal element 1.
It does not leak toward 54. Accordingly, the first to third liquid crystal elements hold the potential of the signal input immediately before.

Note that the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 have transmittance in accordance with the video signal.

That is, in FIG. 2, when compared with FIG. 1, the third liquid crystal element 105 of FIG. 1 is replaced with the third capacitor element 161 and the third liquid crystal element 155 of FIG. This corresponds to the case of replacement. Therefore, the contents described in FIG. 1 can be applied to FIG. For example, as illustrated in FIG. 15, the third capacitor 161 and the third liquid crystal element 155 connected in series may be divided into a plurality of parts. Alternatively, as shown in FIG. 12, the capacitor element may be omitted and only the liquid crystal element may be divided into a plurality of parts.

In FIG. 2, the third liquid crystal element 105 in FIG.
However, the present invention is not limited to this. It may be replaced with another liquid crystal element. For example, FIG. 13 illustrates the case where the first liquid crystal element 153 is replaced with a capacitor and a liquid crystal element connected in series. In this case, as in FIG. 12, FIG.
As shown in FIG.

2 is obtained by replacing the portion of the third liquid crystal element 105 in FIG. 1 with the third capacitor element 161 and the third liquid crystal element 155 of FIG. 2 connected in series. 1 can be modified. That is, a storage capacitor may be added to a part of each liquid crystal element as shown in FIG. 7, or a storage capacitor may be added to all of the liquid crystal elements as shown in FIG. Further, as shown in FIG. 8 or FIG. 18, two scanning lines may be combined into one signal line, or FIG.
Alternatively, as shown in FIG. 19, both the scanning lines and the signal lines may be combined.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

FIG. 3 shows an example of a different configuration of the pixel circuit included in the liquid crystal display device of the present invention. The pixel 200 includes a first switch 201, a second switch 202, a transistor 203, a first liquid crystal element 204, a second liquid crystal element 205, and a third liquid crystal element 2.
06, a first capacitor element 207, and a second capacitor element 208.

The first wiring 209 is connected to the first electrode of the first liquid crystal element 204 and the first electrode of the first capacitor 207 through the first switch 201. The second wiring 210 is the second wiring
The first electrode of the liquid crystal element 205 and the first electrode of the second capacitor element 208 are connected via the second switch 202. The second wiring 210 is the first wiring of the third liquid crystal element 206.
The electrode is connected through a transistor 203. The gates of the first switch 201, the second switch 202, and the transistor 203 are connected to the third wiring 211. The second electrode of the first capacitor 207 is connected to the second electrode of the second capacitor 208 and the first electrode of the third liquid crystal element 206.

Note that the transistor 203 operates as a switch having higher on-resistance than the first switch 201 and the second switch 202. That is, it can be handled in the same manner as a switch in which resistance elements are connected in series. However, it is not limited to this. The on-resistance of the transistor 203 may be lower than that of the first switch 201 and the second switch 202.

Note that although the transistor 203 is an n-channel transistor in FIG. 3, the invention is not limited to this. That is, the transistor 203 may be a P-channel transistor.

The second electrodes of the first liquid crystal element 204, the second liquid crystal element 205, and the third liquid crystal element 206 are connected to a common electrode.

The first wiring 209 and the second wiring 210 function as signal lines. Accordingly, an image signal is usually supplied to the first wiring 209 and the second wiring 210. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 211 functions as a scanning line.

The first switch 201 and the second switch 202 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, in the case of using a transistor which describes the case where a transistor is used as the first switch 101 and the second switch 102, the polarity may be a P-channel type or an N-channel type.

FIG. 3B shows the case where an N-channel transistor is used as a switch. FIG. 2 (B
), The gates of the first switch 201N and the second switch 202N are connected to the third wiring 110. The third wiring 211A functions as a scanning line.

2 may have two scanning lines as shown in FIG. 49 as in FIG.
Note that a P-channel transistor can be used as a switch.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

Video signals are input to the first wiring 209 and the second wiring 210. A scanning signal is input to the third wiring 211. The scanning signal is an H level or L level digital voltage signal. In the case where the first and second switches and the transistor 203 are N-channel transistors, the H level of the scanning signal is a potential at which the first to third transistors can be turned on, and the L level of the scanning signal is the first and second transistors. This is a potential at which the switch and the transistor 203 can be turned off. Alternatively, when the first and second switches and the transistor 203 are P-channel transistors, the H level of the scanning signal is a potential at which the first and second switches and the transistor 203 can be turned off, and the L level of the scanning signal is the first level. 1 and 2 switches and transistor 2
This is a potential at which 03 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be a current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

That is, FIG. 3 is different from FIG. 1 in that the pixel electrode of the third liquid crystal element 206 in FIG.
It can be said that the transistor 203 connected to the wiring 210 is added. In the case of FIG. 1, if any noise or leakage current enters the point where the first capacitor element 207 and the second capacitor element 208 are connected, electric charge accumulates there. As a result, the voltage applied to the liquid crystal element is affected, and the image quality may be degraded. However, as shown in FIG. 3, by adding the transistor 203, accumulated charges can be extracted. As a result, image quality defects such as burn-in can be reduced.

Note that as described above, the on-resistance of the transistor 203 is preferably higher than the on-resistance of the first switch 201 or the second switch 202. The high on-resistance of the transistor means that the ratio (W / L) between the channel width W and the channel length L is small.
In this manner, by increasing the on-resistance of the transistor, the potential at the point where the first capacitor element 207 and the second capacitor element 208 are connected can be determined as leakage current of each capacitor element, each storage capacitor, or the like. It will be decided by the balance. However, the present invention is not limited to this, and the first to third transistors may be formed to have substantially the same size, and a resistance element may be connected in series with the third transistor 203.

Therefore, the contents described in FIGS. 1 and 2 can be applied to FIG. For example, FIG. 4 shows a case where FIG. 2 is applied to FIG.

3 and 4 and the like, the first switch 201N (or the first switch 251).
N), the second switch 202N (or the second switch 252N) and the transistor 203
The (transistor 253) is controlled by the third wiring 211 (or the third wiring 262); however, the invention is not limited to this. These may be connected to different wirings and controlled separately. Alternatively, a part may be connected to another wiring.

Note that although the transistor 203 is connected to the second wiring 210 in FIG. 3, the transistor 203 may be connected to the first wiring 209. The same applies to the case where the third transistor 203 is connected to the first wiring 209. 3, the transistor 253 is connected to the second wiring 261 in FIG. 4, but may be connected to the first wiring 260.

Alternatively, another wiring for connecting the transistor may be provided. Such a case is shown in FIG. In FIG. 5B, two scanning lines are arranged, and the scanning line for controlling the first switch 301N and the second switch 302N and the scanning line for controlling the transistor 303 are different wirings. Not. The first switch 301N, the second switch 302N, and the transistor 303 may be connected to the same scan line. Therefore, the contents described in other figures such as FIG. 1 can be applied to FIG. For example, FIG. 6 shows a case where FIG. 2 is applied to FIG.

Note that in FIG. 5, the transistor 303 is preferably turned on when the first switch 301 or the second switch 302 is turned off, but the invention is not limited to this. The transistor 303 may be on when the first switch 301 or the second switch 302 is on or during a part of the period when the first switch 301 or the second switch 302 is on (preferably the first half). .

Note that the potential of the fifth wiring 313 is preferably substantially the same as that of the common electrode; however, the present invention is not limited to this. The potential of the first wiring 309 or the second wiring 310 may be approximately equal to the potential of the first wiring 309 or the second wiring 310.

Note that the fifth wiring 313 can be shared with another wiring. For example, capacity line,
It can be shared with scanning lines. Note that the shared wiring may be a wiring of another pixel. As a result, the aperture ratio can be improved. The contents described in other drawings such as FIG. 1 can be applied to FIG. That is, at least one of the transistors may be a P-channel type, and the liquid crystal element may be divided into a plurality of parts.

Note that in FIG. 6, the transistor 353 is connected to the third capacitor 359.
It is not limited to this. A transistor 353 may be connected between the contact point between the third capacitor 359 and the third liquid crystal element 356 and the fifth wiring 364. The contents described in other drawings such as FIG. 1 can be applied to FIG.

  The first to third liquid crystal elements have a transmittance corresponding to the video signal.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Heretofore, the case where two capacitive elements are connected between signal lines via switches has been described, but the present invention is not limited to this. It is possible to arrange more capacitive elements. By adding a capacitor element, a voltage applied to the liquid crystal element can be further varied. Then, by applying each voltage to each liquid crystal element, a large number of liquid crystal elements having different applied voltages can be arranged. As a result, the viewing angle can be widened.

Therefore, an example in which a capacitive element and a liquid crystal element are further added to FIG.
Shown in Alternatively, FIG. 20 illustrates an example in which a capacitor and a liquid crystal element are additionally provided with respect to FIG. A liquid crystal element may be further added. The first liquid crystal element 503 is the third liquid crystal element.
The liquid crystal element 505 may be similarly connected. Similarly, a capacitor and a liquid crystal element can be added to the circuits illustrated in other drawings. Note that the contents described in the description of other drawings can be applied to FIGS. 9 and 20.

In FIG. 9, a pixel 500 includes a first switch 501, a second switch 502, a first liquid crystal element 503, a second liquid crystal element 504, a third liquid crystal element 505, and a fourth liquid crystal. Element 506, first capacitor element 507, second capacitor element 508, and third capacitor element 50
9, a first wiring 510, a second wiring 511, and a third wiring 512.

The first wiring 510 is connected to the first electrode of the first liquid crystal element 503 and the first electrode of the first capacitor 507 through the first switch 501. The second wiring 511 is connected to the first electrode of the second liquid crystal element 504 and the first electrode of the third capacitor element 509.
2 is connected. The second electrode of the first capacitor 507 is the second capacitor 508.
The first electrode and the first electrode of the third liquid crystal element 505 are connected. The second electrode of the second capacitor 508 is connected to the second electrode of the third capacitor 509 and the first electrode of the fourth liquid crystal element 506.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to a common electrode.

The first wiring 510 and the second wiring 511 function as signal lines. Therefore, the first
In general, an image signal is supplied to the wiring 510 and the second wiring 511. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 512 functions as a scanning line.

The first switch 501 and the second switch 502 are not particularly limited as long as they function as switches. For example, when a transistor is used, the polarity may be a P-channel type or an N-channel type.

FIG. 9B shows the case where an N-channel transistor is used as a switch. FIG. 9 (B
), The gates of the first switch 501N and the second switch 502N are connected to the third wiring 512. The third wiring 512 functions as a scanning line.

9 may have two scanning lines as shown in FIG. 49 as in FIG.
Note that a P-channel transistor can be used as a switch.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

  Furthermore, the liquid crystal element may be divided into a plurality of parts as shown in FIG.

Note that the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element are used.
The liquid crystal element 506 has a transmittance corresponding to the video signal.

As described above, the number of liquid crystal elements per pixel can be four, or the number of liquid crystal elements per pixel can be further increased. By increasing the number of liquid crystal elements per pixel, various alignment states can be provided, and a liquid crystal display device having a wider viewing angle can be provided.

9 and 20, the case where a liquid crystal element is added by adding a capacitor element has been described. However, it is not limited to this. By increasing transistors, signal lines, etc.
The number of liquid crystal elements arranged in one pixel can be increased. Therefore, as an example, FIG. 10 shows a case where a liquid crystal element is additionally arranged by increasing the number of transistors and signal lines with respect to the circuit of FIG. However, it is not limited to this configuration. In FIG. 10, a signal line is added without adding a scanning line, but a scanning line may be added without adding a signal line. In FIG. 21, a capacitor 584 is added without adding a signal line, and the potential supplied from the signal line is divided by arranging the capacitor 584 between the signal line and the fourth liquid crystal element 557. Show. In FIG. 22, a capacitor is added without adding a signal line, a capacitor 572 is added between the signal line and the first liquid crystal element 554, and a gap between the signal line and the first liquid crystal element 554 is added. The case where the potential supplied from the signal line is divided is shown by arranging in FIG. With the structure shown in FIGS. 21 and 22, different voltages can be applied to the four liquid crystal elements without adding signal lines.

21 and 22, the fourth liquid crystal element 557 is connected to the first wiring 560; however, the fourth liquid crystal element 557 may be connected to the second wiring 561.

As in the case of FIG. 1, liquid crystal elements can be additionally arranged in the circuits shown in other drawings. Note that the contents described in the explanation of the other drawings can be applied to FIG. That is, the transistor may be a P-channel type, and the liquid crystal element may be divided into a plurality of parts.

In FIG. 10, a pixel 550 includes a first switch 551, a second switch 552,
The third switch 553, the first liquid crystal element 554, the second liquid crystal element 555, the third liquid crystal element 556, the fourth liquid crystal element 557, the first capacitor element 558, Capacitance element 5
59.

The first wiring 560 is connected to the first electrode of the first liquid crystal element 554 and the first electrode of the first capacitor 558 through the first switch 551. The second wiring 561 is connected to the first electrode of the second liquid crystal element 555 and the first electrode of the second capacitor element 559. The third wiring 562 is connected to the first electrode of the fourth liquid crystal element 557 through the third switch 553. The second electrode of the first capacitor 558 is connected to one of the second electrode of the second capacitor 559 and the first electrode of the third liquid crystal element 556.

FIG. 10B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 551N and the second switch 552N are connected to the fourth wiring 563. The fourth wiring 563 functions as a scanning line.

In FIG. 10, as in FIG. 1, two scanning lines may be provided as shown in FIG.
Note that a P-channel transistor can be used as a switch.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

  Furthermore, the liquid crystal element may be further divided into a plurality of pieces as shown in FIG.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to a common electrode.

The first wiring 560, the second wiring 561, and the third wiring 562 function as signal lines. Therefore, the first wiring 560, the second wiring 561, and the third wiring 562 are usually
An image signal is supplied. However, it is not limited to this. A constant signal may be supplied regardless of the image. The fourth wiring 563 functions as a scanning line.

Note that a capacitor may be provided between the liquid crystal element and a wiring functioning as a signal line. FIG.
As shown in FIG. 1, the voltage applied to the liquid crystal element can be varied by providing the capacitor 566. Therefore, the first wiring 560 and the third wiring 562 in FIG. 10 can be combined into one.

Note that the position where the capacitor element is additionally provided is not limited to the position between the fourth liquid crystal element and the signal line, and the capacitor element is provided between the other liquid crystal element and the signal line as shown in FIG. (For example, a capacitor 565) may be provided. Also in this case, a plurality of signal lines can be combined into one.

As described above, the number of liquid crystal elements per pixel can be four, or the number of liquid crystal elements per pixel can be further increased. By increasing the number of liquid crystal elements per pixel, various alignment states can be provided, and a liquid crystal display device having a wider viewing angle can be provided.

An example of a top view of a pixel of a liquid crystal display device to which the present invention is applied is shown in FIG. FIG. 33 shows a circuit diagram of FIG. 32 and 33 use the same reference numerals for corresponding parts.

A pixel 1000 illustrated in FIG. 32 includes a first conductive layer (a wiring that serves as a scan line and a capacitor line).
A hatch pattern of the third wiring 1013 is shown. ) Is provided with a first insulating film (not shown), a semiconductor film is provided on the first insulating film, and a second conductive layer (first wiring 1) is provided on the semiconductor film.
This is indicated by the hatch pattern 011. ), A second insulating film (not shown) is provided over the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1003) is provided over the second insulating film. ) Is provided.

In FIG. 33, a pixel 1000 includes a first switch 1001 and a second switch 100.
2, the first liquid crystal element 1003, the second liquid crystal element 1004, and the third liquid crystal element 1005.
A fourth liquid crystal element 1006, a first capacitor element 1007, a second capacitor element 1008, a third capacitor element 1009, a fourth capacitor element 1010, a fifth capacitor element 1016,
And a sixth capacitor element 1017.

The first wiring 1011 is connected to the fourth electrode of the fourth liquid crystal element 1006, the first capacitor element 1007, and the first electrode of the second capacitor element 1008 through the first transistor 1001. . The second wiring 1012 includes a first liquid crystal element 1003 and a fourth capacitor element 1010.
And the first electrode of the third capacitor 1009 through the second transistor 1002. The second electrode of the second capacitor element 1008 is connected to the third capacitor element 100.
9 second electrode, first electrode of fifth capacitor element 1016, first electrode of second liquid crystal element 1004.
, The first electrode of the sixth capacitor 1017, and the first electrode of the third liquid crystal element 1005. The second electrode of the first capacitor element 1007 and the second electrode of the sixth capacitor element 1017 are connected to the fifth wiring 1015. The second electrode of the fifth capacitor 1016 and the second electrode of the fourth capacitor 1010 are connected to the fourth wiring 1014.

Note that in FIG. 33, a storage capacitor is provided in each of all the liquid crystal elements in FIG. That is, it can be said that FIG. 11 and FIG. 16 are combined. Therefore, FIG. 33 can apply the same configuration as FIG. That is, the wiring functioning as a capacitor line may be shared with the common electrode as shown in FIG. 50, the switch can be replaced with a transistor, an N-channel type may be used for the transistor, and P A channel type may be used.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

The first wiring 1011 and the second wiring 1012 function as signal lines. Therefore, the first
In general, an image signal is supplied to the wiring 1011 and the second wiring 1012. However, it is not limited to this. A constant signal may be supplied regardless of the image. Third wiring 10
13 functions as a scanning line. The fourth wiring 1014 and the fifth wiring 1015 function as a capacitor line.

By providing the pixels as shown in the top view in FIG. 32, each liquid crystal element can have various alignment states, and a liquid crystal display device having a wider viewing angle can be provided.

Note that although this embodiment mode describes only the case where all transistors provided in one pixel have the same conductivity type, the present invention is not limited to this. In other words, transistors provided in one pixel may have different conductivity types.

Further, the type of transistor in this embodiment is not particularly limited, and various types can be used. Therefore, a thin film transistor (TFT) using a crystalline semiconductor film, a thin film transistor using a non-single crystal semiconductor film typified by amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, MOS Type transistor, junction type transistor, bipolar transistor, transistor using a compound semiconductor such as ZnO or a-InGaZnO, transistor using an organic semiconductor or carbon nanotube,
Other transistors can be applied. However, it is preferable to use a transistor with low off-state current. As a transistor with low off-state current, a thin film transistor provided with an LDD region, a thin film transistor having a multi-gate structure, or the like can be given. Also,
A CMOS switch may be used by using both an N channel type and a P channel type.

Note that although various drawings are used in this embodiment mode, part or all of the contents described in each figure are applied to part or all of the contents described in another figure. And combination,
Alternatively, replacement can be performed freely. Furthermore, in the figures described so far, more configurations can be considered by combining different parts for each part,
The description of this embodiment does not prevent this.

Similarly, part or all of the contents described in each drawing of this embodiment can be applied to, combined with, or replaced with part or all of the contents described in the drawings of another embodiment. Etc. can be performed freely. Further, in the drawings of this embodiment mode, each portion can be combined with a portion of another embodiment mode to construct more drawings, and the description of this embodiment mode does not disturb this. .

Note that this embodiment is embodied in a part or all of the contents described in the other embodiments, is slightly modified, partially modified, improved, An example of a case where it is described in detail, applied, or related is shown. Therefore, the contents described in other embodiment modes can be freely applied to this embodiment mode and combined with or replaced with each other.

(Embodiment 2)
In the first embodiment, a new voltage is generated by dividing a voltage using a capacitor and supplied to the liquid crystal element. However, an element for generating a new voltage is not limited to a capacitor element.
An element that divides voltage, an element that converts current into voltage, a non-linear element, an element having a resistance component,
Various elements such as an element having a capacitance component, an inductor, a diode, a transistor, a resistance element, and a switch can be used. Also. A desired circuit can be realized by connecting and connecting them in series or in parallel. Such an element is called a voltage dividing element.

FIG. 23 shows a generalized case where the capacitive element in FIG. 1 is a voltage dividing element. Therefore, the description in Embodiment Mode 1 can be applied to FIG.

FIG. 23A illustrates an example of a structure of a pixel circuit included in the liquid crystal display device of the present invention. The pixel 600 includes a first switch 601, a second switch 602, and the first liquid crystal element 6.
03, a second liquid crystal element 604, a third liquid crystal element 605, a first voltage dividing element 606,
A second voltage dividing element 607.

The first wiring 608 is connected to the first electrode of the first liquid crystal element 603 and one end of the first voltage dividing element 606 through the first switch 601. The second wiring 609 is connected to the first electrode of the second liquid crystal element 604 and one end of the second voltage dividing element 607 through a second switch. The first voltage dividing element 606 and the second voltage dividing element 607 are connected in series, and the first electrode of the third liquid crystal element 605 is between the first voltage dividing element 606 and the second voltage dividing element 607. It is connected to the.

The second electrodes of the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 are connected to a common electrode.

FIG. 23B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 601N and the second switch 602N are connected to the third wiring 610. The third wiring 760 functions as a scanning line.

In FIG. 26, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

The first wiring 608 and the second wiring 609 function as signal lines. Accordingly, an image signal is usually supplied to the first wiring 608 and the second wiring 609. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 610 functions as a scanning line.

Note that the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 have transmittance in accordance with the video signal.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Note that as the first voltage dividing element 606 and the second voltage dividing element 607, not only a capacitor element but also various elements can be used. For example, an element that divides voltage, an element that converts current into voltage, a nonlinear element, an element that has a resistance component, an element that has a capacitance component, an inductor, a diode, a transistor, a resistance element, a switch, or the like is used as a voltage dividing element. it can. FIG. 30 illustrates an example of a voltage dividing element.

First, as shown in FIGS. 30J and 30K, an N-channel transistor and a P-channel transistor can be used.

FIG. 30A illustrates a diode-connected N-channel transistor. FIG. 30 (B
) Is obtained by reversing the direction of connection in FIG. FIG. 30 (C) is similar to FIG.
The elements shown in A) and FIG. 30B are connected in parallel. 30D and 30E are obtained by replacing the N-channel transistors in FIGS. 30A and 30B with P-channel transistors. P-channel transistors may be connected in parallel as in FIG. Alternatively, as illustrated in FIG. 30F, a P-channel transistor and an N-channel transistor may be connected in parallel.

FIGS. 30G and 30L show voltage dividing elements in which a resistance element and a capacitance element are connected in series or in parallel.

30H and 30I, a resistance element and a P-channel transistor or an N-channel transistor are connected in series.

Note that there is no particular limitation on the wiring to which the gates of the transistors illustrated in FIGS. 30H, 30I, 30J, and 30K are connected. A scan line, a capacitor line, or a signal line may be connected. Also,
You may connect to the scanning line etc. of the row | line | column adjacent to the said pixel. By controlling the gate potential, the resistance value of the voltage dividing element can be controlled.

FIGS. 30M and 30N show diodes. There are various types of diodes, but a diode that can be used as a voltage dividing element is not particularly limited. For example, PN type, PI
N-type, Schottky-type, MIM-type, MIS-type and the like diodes can be used. Furthermore, as shown in FIG. 30 (O), two diodes may be connected in parallel in opposite directions.

Furthermore, an inductor element shown in FIG. 30 (P) may be used, or a resistor element may be used as shown in FIG. 30 (Q). As the resistance element, one having a variable resistance value as shown in FIG.

Therefore, in the structure described in Embodiment Mode 1, a new circuit can be formed by replacing the capacitor element with the voltage dividing element shown in FIG. Therefore, the contents described in Embodiment Mode 1 can also be applied to FIG. 23 and a circuit in which the capacitor element is replaced with a voltage dividing element.

Circuit diagrams in which the voltage dividing elements 606 and 607 shown in FIG. 23 are replaced with various elements shown in FIG. 30 are shown in FIGS. Accordingly, the same configuration as that of FIG. 1 can be applied to FIGS. That is, as shown in FIG. 7, the first electrode of some or all of the liquid crystal elements may be connected to the capacitor line. The capacitor line may be shared with the common electrode as shown in FIG. The switch can be replaced with a transistor, and an N-channel type or a P-channel type may be used for the transistor. When transistors are used, the gates of the transistors may be connected to the same scanning line or may be connected to different scanning lines. Further, as shown in FIG. 11, the liquid crystal element may be divided into a plurality of parts. A plurality of signal lines may be provided or may be combined into one as shown in FIG. Further, FIG. 2 and FIG.
As shown in 2 etc., a voltage dividing element may be appropriately disposed at an appropriate position.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

Note that the resistance value of the voltage dividing element does not have to be constant, and may be set so that the resistance value varies depending on time or pixels. In order to change the resistance value, the voltage dividing element preferably includes a transistor. In the case of using a transistor, the gate potential of the transistor may be changed depending on time or a pixel.

Note that in the case where a voltage dividing element is connected between liquid crystal elements, when the connection between the signal line and the liquid crystal element is turned off, charges may leak between the liquid crystal elements. In order to prevent charge leakage, a voltage dividing element and a switch may be connected in series and connected between the liquid crystal elements. An example in that case is shown in FIG. The connection between the voltage dividing element and the switch may be reversed.

In addition, although the voltage dividing element and the switch are arrange | positioned 1 each between the liquid crystal elements, it is not limited to this. A plurality may be arranged. Note that the description in Embodiment Mode 1 and FIG. 23 can be applied to FIG.

The pixel 650 includes a first switch 651, a second switch 652, and the first liquid crystal element 6.
53, a second liquid crystal element 654, a third liquid crystal element 655, a first voltage dividing element 656,
A second voltage dividing element 657, a third switch 658, and a fourth switch 659 are included.

The first wiring 660 is connected to the first electrode of the first liquid crystal element 653 and one end of the third switch 658 through the first switch 651. The second wiring 661 is connected to the first electrode of the second liquid crystal element 654 and one end of the fourth switch 659. The third switch 658 and the fourth switch 659 are connected in series, and the first voltage dividing element 656 and the second voltage divider connected in series are connected between the third switch 658 and the fourth switch 659. An element 657 is provided, and the first electrode of the third liquid crystal element 655 serves as the first voltage dividing element 656 and the second voltage dividing element 6.
57 is connected.

The second electrodes of the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 are connected to a common electrode.

The first wiring 660 and the second wiring 661 function as signal lines. Accordingly, an image signal is normally supplied to the first wiring 660 and the second wiring 661. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 662 functions as a scan line.

The first switch 651 and the second switch 652 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, when transistors are used as the first switch 651 and the second switch 652, the polarity may be a P-channel type or an N-channel type.

The third switch 658 and the fourth switch 659 are not particularly limited as long as they function as switches. For example, a transistor can be used. Third switch 65
The polarity of the transistors used for the eighth and fourth switches 659 may be P-channel type, or N
It may be a channel type.

FIG. 24B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 651N and the second switch 652N are connected to the third wiring 662. The third wiring 662 functions as a scanning line.

Note that in FIG. 24 as well as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

Note that the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 have transmittance in accordance with the video signal.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Next, FIG. 23 and FIG. 24 show specific examples when the voltage dividing element of FIG. 30 is applied. First, the case of using FIG. 30J will be described with reference to FIG. The gate is connected to the scanning line. FIG. 23 and FIG. 24 correspond to the first capacitor element 106 and the second capacitor element 107 in FIG. 1 replaced with transistors. Therefore, Embodiment 1 and FIG.
The contents described in FIG. 3 and FIG. 24 can also be applied to FIG.

The pixel 700 includes a first switch 701, a second switch 702, and a first liquid crystal element 7.
03, the second liquid crystal element 704, the third liquid crystal element 705, and the first transistor 706.
And a second transistor 707.

The first wiring 708 includes the first electrode of the first liquid crystal element 703 and the first transistor 706.
Is connected to one of the source and the drain via a first switch 701. The second wiring 709 is connected to the first electrode of the second liquid crystal element 704 and one of the source and the drain of the second transistor 707 through the second switch 702. The other of the source and the drain of the first transistor 706 and the other of the source and the drain of the second transistor 707 are connected to the first electrode of the third liquid crystal element 705. The first and second transistors are connected to the third wiring 710.

The second electrodes of the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 are connected to a common electrode.

The first wiring 708 and the second wiring 709 function as signal lines. Accordingly, an image signal is usually supplied to the first wiring 708 and the second wiring 709. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 710 functions as a scanning line.

The first switch 701 and the second switch 702 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, the case where transistors are used as the first switch 701 and the second switch 702 is described. In the case of using a transistor, the polarity may be a P-channel type or an N-channel type.

FIG. 25B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 701N and the second switch 702N are connected to the third wiring 710. The third wiring 710 functions as a scanning line.

25, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

The first transistor 706 and the second transistor 707 may function as voltage dividing elements, and the polarity of the first transistor 706 and the second transistor 707 may be a P-channel type or an N-channel type.

Next, the operation of the pixel 700 will be described. First, selected by the third wiring 710,
The first switch 701 and the second switch 702 are turned on. Then, the first wiring 7
The video signal is supplied from 08 and the second wiring 709. Simultaneously with the first and second switches, the first transistor 706 and the second transistor 707 are also turned on. Therefore, the first wiring 708 and the second wiring 709 are connected to each other through the transistor. Since each transistor has a resistance component (on-resistance), the voltage is divided by each transistor. At this time, when the on-resistance of the first transistor 706 and the second transistor 707 is high, most of the voltage is applied to the transistors.

Accordingly, a potential substantially equal to the potential of the first wiring 708 is applied to the pixel electrode of the first liquid crystal element 703. More precisely, from the potential of the first wiring 708, the first switch 701 is used.
The potential corresponding to the voltage drop is applied to the pixel electrode of the first liquid crystal element 703. Similarly, a potential substantially equal to the potential of the second wiring 709 is applied to the pixel electrode of the second liquid crystal element 704. More precisely, a potential corresponding to a voltage drop by the second switch 702 is added to the pixel electrode of the second liquid crystal element 704 from the potential of the second wiring 709.

Then, the potential of the pixel electrode of the first liquid crystal element 703 and the potential of the pixel electrode of the second liquid crystal element 704 are divided by the first transistor 706 and the second transistor 707 so that the third liquid crystal It is supplied to the pixel electrode of the element 705. Suppose that the first transistor 706
When the on-resistances of the second transistor 707 and the second transistor 707 are substantially equal, the third liquid crystal element 70
5 pixel electrode potential of the first liquid crystal element 703 and the second liquid crystal element 70.
4 between the potentials of the four pixel electrodes.

Note that when the on-resistance of the first switch 701, the second switch 702, the first transistor 706, the second transistor 707, and the like is small, a large current flows.
Therefore, it is desirable that the first transistor 706 and the second transistor 707 which are transistors for voltage division have high on-resistance. For example, the first transistor 70
The first switch 701 or the second switch 70 than the sixth or second transistor 707.
2 preferably has a smaller ratio (W / L) between the channel width W and the channel length L. For example, the channel length L of the first transistor 706 or the second transistor 707 may be increased by using a multi-gate structure.

Note that the first transistor 706 and the second transistor 707 preferably have substantially the same on-resistance. Since the on-resistance is approximately equal, the divided voltage becomes an intermediate potential. If there is a difference in on-resistance, it will be biased to either potential, and evenly,
This is because the liquid crystal element cannot be controlled. For example, it is desirable that the ratio (W / L) between the channel width W and the channel length L of the first transistor 706 and the second transistor 707 is approximately equal. However, it is not limited to this.

When the third wiring 710 is in a non-selected state, the first switch 701 and the second switch 70
2. The first transistor 706 and the second transistor 707 are turned off. Then
The voltage supplied to each liquid crystal element is held. By operating in this way, the voltage applied to each liquid crystal element can be varied. As a result, the viewing angle can be widened. However, the driving method is not limited to this. The timing at which each transistor is turned on / off, the potential of the signal line, and the like can be controlled by various methods.

Note that since the first transistor 706 and the second transistor 707 are also turned off, charge does not leak between the liquid crystal elements. Therefore, it can be said that the first transistor 706 and the second transistor 707 are obtained by realizing the voltage dividing element and the switch in FIG. 24 with one element.

Note that the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 have transmittance in accordance with the video signal.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Note that the first transistor 706 and the second transistor 707 are not limited to the structures shown in the drawing. For example, one or both of the first transistor 706 and the second transistor 707 may have a multi-gate structure. With the multi-gate structure, the resistance values of the first transistor 706 and the second transistor 707 can be adjusted more easily than in the case of the single gate structure. Further, the on-resistance of the first transistor 706 and the second transistor 707 can be increased as compared with the single gate structure.

Note that the resistance values of the first transistor 706 and the second transistor 707 are not necessarily constant, and may be set so that the resistance values differ depending on time or pixels. In order to change the resistance value, the first transistor 706 and the second transistor 70 functioning as voltage dividing elements.
In FIG. 7, the gate potential may be changed depending on time or pixels.

23 to 25 do not specify the storage capacity, but as described in FIG.
A storage capacitor may be arranged. As an example, FIG. 26 shows a case where a storage capacitor is arranged in each liquid crystal element in FIG.

In FIG. 26, the pixel 750 includes a first switch 751, a second switch 752,
The first liquid crystal element 753, the second liquid crystal element 754, the third liquid crystal element 755, the first transistor 756, the second transistor 757, the first capacitor element 762, and the second capacitor An element 763 and a third capacitor element 764 are included.

The first wiring 758 is connected to the first electrode of the first liquid crystal element 753, one of the source and the drain of the first transistor 756, and the first electrode of the third capacitor element 764.
1 is connected. The second wiring 759 is connected to the first electrode of the second liquid crystal element 754, one of the source and the drain of the second transistor 757, and the first electrode of the first capacitor 762. The other of the source or the drain of the first transistor 756 and the second
The other of the source and the drain of the transistor 757 is connected to the first electrode of the third liquid crystal element 755 and the first electrode of the second capacitor element 763. The first and second switch arrays and the first and second transistors are connected to the third wiring 760. First capacitive element 76
2 and the second electrodes of the second capacitor element 763 and the third capacitor element 764 are connected to the fourth wiring 761.

The second electrodes of the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 are connected to a common electrode.

The first wiring 758 and the second wiring 759 function as signal lines. Third wiring 760
Functions as a scanning line. The fourth wiring 761 functions as a capacitor line.

The first switch 751 and the second switch 752 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 751
In the case where a transistor is used as the second switch 752, the polarity may be a P-channel type or an N-channel type.

FIG. 26B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 751N and the second switch 752N are connected to the third wiring 760. The third wiring 760 functions as a scanning line.

In FIG. 26, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

The first transistor 756 and the second transistor 757 may function as voltage dividing elements, and the polarity of the first transistor 756 and the second transistor 757 may be a P-channel type or an N-channel type.

Note that the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 have transmittance in accordance with the video signal.

Note that the resistance values of the first transistor 756 and the second transistor 757 do not have to be constant, and may be set so that the resistance values differ depending on time or pixels. In order to change the resistance value, the gate potential of the first transistor 756 and the second transistor 757 functioning as resistors may be changed depending on time or a pixel.

As described above, each liquid crystal element can have different alignment states, and the viewing angle can be widened.

In FIGS. 25 and 26, the gates of the first and second transistors are connected to the scanning line; however, the present invention is not limited to this. Another wiring may be arranged and connected to the wiring. Alternatively, a plurality of separate wirings may be provided, and the gates of the first transistor and the second transistor may be connected to separate wirings. FIG. 27B illustrates the case where the gates of the first transistor and the second transistor in FIG. 27A are connected to a fourth wiring. Thus, the gate potentials of the first transistor and the second transistor can be controlled independently from the first and second switches, and the on-resistances of the first and second transistors can be controlled. Can be easily controlled. For example, when a negative-polarity video signal (the video signal is lower than the common electrode potential) is input, the gate-source voltages of the first and second transistors become very large. Therefore, the on-resistance of the first transistor and the second transistor is decreased, and a large amount of current flows, so that power consumption may increase. Therefore, when the first and second transistors are turned on to divide the voltage, the negative video signal is input more than the case where the positive video signal (the video signal is higher than the common electrode potential) is input. In the case of input, the gate potentials of the first and second transistors are made lower. As a result, it is possible to prevent a large amount of current from flowing.

The pixel 800 includes a first switch 801, a second switch 802, a first transistor 803, a second transistor 804, a first liquid crystal element 805, and a second liquid crystal element 8.
06 and a third liquid crystal element 807.

The first wiring 808 includes the first electrode of the first liquid crystal element 805 and the first transistor 80.
3 is connected to one of the source and the drain via a first switch 801. The second wiring 809 is connected to the second switch 802 on one of the first electrode of the second liquid crystal element 806 and the source or drain of the second transistor 804. First transistor 80
3, and the other of the source and the drain of the second transistor 804 is connected to the first electrode of the third liquid crystal element 807. First switch 801 and second switch
The gate of the switch 802 is connected to the third wiring 810. First transistor 8
03 and the gate of the second transistor 804 are connected to the fourth wiring 811.

The second electrodes of the first liquid crystal element 805, the second liquid crystal element 806, and the third liquid crystal element 807 are connected to a common electrode.

The first wiring 808 and the second wiring 809 function as signal lines. Accordingly, an image signal is usually supplied to the first wiring 808 and the second wiring 809. However, it is not limited to this. Regardless of the image. A constant signal may be supplied. The third wiring 810 and the fourth wiring 811 function as scanning lines.

The first switch 801 and the second switch 802 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 801
When a transistor is used as the second switch 802, the polarity may be a P-channel type or an N-channel type.

FIG. 27B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 801N and the second switch 802N are connected to the third wiring 810. The third wiring 760 functions as a scanning line.

27, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

The first transistor 803 and the second transistor 804 may function as voltage dividing elements, and the polarity of the first transistor 803 and the second transistor 804 may be a P-channel type or an N-channel type.

Note that when the first transistor 803 and the second transistor 804 are turned on to function as voltage dividing elements, the first transistor 803 and the second transistor 8
04 is preferably operated in the linear region. This is because the on-resistance of the first transistor 803 and the second transistor 804 is set to an appropriate value.

Note that the timing at which the first switch 801 and the second switch 802 are turned on / off and the timing at which the first transistor 803 and the second transistor 804 are turned on / off are preferably substantially the same. However, it is not limited to this. First switch 80
When the first and second switches 802 are turned on, after a little delay, the first transistor 80
3 and the second transistor 804 may be turned on. Accordingly, the period during which the first wiring 808 and the second wiring 809 are connected can be shortened. Therefore, charge can be easily input to the first liquid crystal element 805 and the second liquid crystal element 806.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Next, an example in which the contents described in Embodiment 1 are applied to FIG. An example of a circuit configured by replacing the capacitive element with the voltage dividing element shown in FIG. 30 is shown. FIG. 28 illustrates the case where the first capacitor element and the second capacitor element in FIG. 2 are replaced with those in FIG. At this time, the gate of the transistor of the voltage dividing element is connected to the scanning line. However, it is not limited to this. Therefore, the contents described in Embodiment Mode 1 can also be applied to FIG.

The pixel 850 includes a first switch 851, a second switch 852, and the first liquid crystal element 8.
53, the second liquid crystal element 854, the third liquid crystal element 855, and the first transistor 856.
A second transistor 857 and a capacitor 861.

The first wiring 858 includes the first electrode of the first liquid crystal element 853 and the first transistor 85.
6 is connected to one of the source and the drain via a first switch 851. The second wiring 859 is connected to the first electrode of the second liquid crystal element 854 and one of the source and the drain of the second transistor 857. The other of the source and the drain of the first transistor 856 and the other of the source and the drain of the second transistor 857 are connected to the first electrode of the capacitor 861, and the second electrode of the capacitor 861 is a third liquid crystal. The first electrode of the element 855 is connected. The first and second transistors are connected to the third wiring 860.

The second electrodes of the first liquid crystal element 853, the second liquid crystal element 854, and the third liquid crystal element 855 are connected to a common electrode.

The first wiring 858 and the second wiring 859 function as signal lines. Accordingly, an image signal is usually supplied to the first wiring 858 and the second wiring 859. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 860 functions as a scanning line.

The first switch 851 and the second switch 852 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 85
In the case where transistors are used as the first and second switches 852, the polarity may be a P-channel type or an N-channel type.

FIG. 28B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 851N and the second switch 852N are connected to the third wiring 760. The third wiring 860 functions as a scanning line.

Note that in FIG. 28 as well as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

The first transistor 856 and the second transistor 857 may function as voltage dividing elements, and the polarity of the first transistor 856 and the second transistor 857 may be a P-channel type or an N-channel type.

With the circuit configuration illustrated in FIG. 28, the potential of the first electrode of the third liquid crystal element 855 can be decreased by the amount corresponding to the capacitor 861, as in FIG.

Note that the first transistor 856 and the second transistor 857 are not limited to the structures shown in the drawing. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure.

Note that the resistance values of the first transistor 856 and the second transistor 857 are not necessarily constant, and may be set so that the resistance values differ depending on time or pixels. In order to change the resistance value, the gate potential of the first transistor 856 and the second transistor 857 functioning as resistors may be changed depending on time or a pixel.

Note that the first transistor 856 and the second transistor 857 are not limited to the structures shown in the drawing. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure. With the multi-gate structure, the on-resistance of the first transistor 856 and the second transistor 857 can be increased as compared with the single-gate structure.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

23 to 28, the case where two voltage dividing elements are used has been described, but the present invention is not limited to this. Further, it is possible to further improve the viewing angle characteristics by using more voltage dividing elements. As an example, when a voltage dividing element is added to FIG.
FIG. 29 shows an example of a circuit in which two voltage dividing elements shown in FIG. 30J are connected in series and a capacitor element are replaced.

In FIG. 29, a pixel 900 includes a first switch 901, a second switch 902, a first liquid crystal element 903, a second liquid crystal element 904, a third liquid crystal element 905, and a fourth liquid crystal element. 906, a first transistor 907, a second transistor 908, and a third transistor 909.

The first wiring 910 includes the first electrode of the first liquid crystal element 903 and the first transistor 907.
Is connected to one of the source and the drain via a first switch 901. The second wiring 911 is connected to the first electrode of the second liquid crystal element 904 and one of the source and the drain of the third transistor 909 through the second switch 902. The other of the source and the drain of the first transistor 907 is connected to the first electrode of the third liquid crystal element 905 and the other of the source and the drain of the second transistor 908. Third transistor 90
The other of the source and the drain of 9 is connected to the first electrode of the fourth liquid crystal element 906 and one of the source and the drain of the second transistor 908. 1st switch 901, 2nd
The switch 902 and the gates of the first and second transistors are connected to the third wiring 912.

The second electrodes of the first liquid crystal element 903, the second liquid crystal element 904, the third liquid crystal element 905, and the fourth liquid crystal element 906 are connected to a common electrode.

The first wiring 910 and the second wiring 911 function as signal lines. Accordingly, an image signal is usually supplied to the first wiring 910 and the second wiring 911. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 912 functions as a scan line.

The first switch 901 and the second switch 902 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 901
In the case where a transistor is used as the second switch 902, the polarity may be a P-channel type or an N-channel type.

FIG. 28B shows the case where an N-channel transistor is used as a switch. FIG.
In (B), the gates of the first switch 901N and the second switch 902N are connected to the third wiring 912. The third wiring 912 functions as a scanning line.

In FIG. 26, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as a switch, and FIG.
For example, the liquid crystal element may be further divided into a plurality of parts.

Note that the switch is not limited to a transistor. Various elements such as a diode can be used as the switch.

The first to third transistors may function as voltage dividing elements, and the polarity of the first to third transistors may be a P-channel type or an N-channel type. In FIG. 28, an N-channel transistor is used.

As shown in FIG. 29, only one of the first and second transistors in FIG. 25 may have a multi-gate structure.

Note that the gates of the first to third transistors are connected to the third wiring for controlling the first and second switches, but the present invention is not limited to this, and will be described with reference to FIG. As described above, the gates of the first to third transistors may be connected to a wiring different from the third wiring for controlling the first and second switches.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

Note that the resistance values of the first transistor 907, the second transistor 908, and the third transistor 909 are not necessarily constant, and may be set so that the resistance values differ depending on time or pixels. In order to change the resistance value, the gate potential of the third to fifth transistors functioning as a resistor may be changed depending on time or a pixel. Note that the first transistor 856 and the second transistor 857 are not limited to the structures shown in the drawing.

As described above, the viewing angle can be widened by making each liquid crystal element have a different alignment state.

An example of a top view of a pixel of a liquid crystal display device to which the present invention is applied is shown in FIG. FIG. 35 shows the circuit diagram of FIG. 34 and 35 use the same reference numerals for corresponding parts.

A pixel 1020 illustrated in FIG. 34 includes a first conductive layer (a conductive layer that forms a scan line and a capacitor line).
A hatch pattern of the third wiring 1033 is shown. ) Is provided with a first insulating film (not shown), a semiconductor film is provided on the first insulating film, and a second conductive layer (first wiring 1) is provided on the semiconductor film.
031 hatch pattern is shown. ), A second insulating film (not shown) is provided over the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1023) is provided over the second insulating film. ) Is provided.

In FIG. 35, a pixel 1020 includes a first transistor 1021 which is a first switch.
A second transistor 1022 which is a second switch, a first liquid crystal element 1023,
The second liquid crystal element 1024, the third liquid crystal element 1025, the fourth liquid crystal element 1026, the first capacitor element 1027, the second capacitor element 1030, the third capacitor element 1036, and the fourth
The capacitor 1036, the third transistor 1028, the fourth transistor 1029, and the fifth transistor 1039 are included.

The first wiring 1031 is connected to the second wiring 1032 through first to fifth transistors connected in series. Between each of the first to fifth transistors, the first to fourth transistors are provided.
The first electrode of the liquid crystal element is connected. The first to fourth liquid crystal elements are connected to the first electrode of the capacitor in which the second electrode is connected to the fourth wiring 1034 or the fifth wiring 1035. Gates of the first to fifth transistors are connected to the third wiring 1033.

Note that in FIG. 35, all the capacitor elements functioning as the voltage dividing elements in FIG. 9B are replaced with transistors, and holding capacitors are provided in all of the capacitor elements. That is, FIG.
And FIG. 16 can be said to be combined. Therefore, FIG. 35 can apply the same configuration as FIG. That is, the wiring functioning as a capacitor line may be shared with the common electrode as shown in FIG. 50, the switch can be replaced with a transistor, an N-channel type may be used for the transistor, and P A channel type may be used.

The first wiring 1031 and the second wiring 1032 function as signal lines. Therefore, the first
In general, an image signal is supplied to the wiring 1031 and the second wiring 1032. However, it is not limited to this. A constant signal may be supplied regardless of the image. Third wiring 10
33 functions as a scanning line. The fourth wiring 1034 and the fifth wiring 1035 function as capacitor lines.

By providing the pixels as shown in the top view in FIG. 32, each liquid crystal element can have various alignment states, and a liquid crystal display device having a wider viewing angle can be provided.

Note that although various drawings are used in this embodiment mode, part or all of the contents described in each figure are applied to part or all of the contents described in another figure. And combination,
Alternatively, replacement can be performed freely. Furthermore, in the figures described so far, more configurations can be considered by combining different parts for each part,
The description of this embodiment does not prevent this.

Similarly, part or all of the contents described in each drawing of this embodiment can be applied to, combined with, or replaced with part or all of the contents described in the drawings of another embodiment. Etc. can be performed freely. Further, in the drawings of this embodiment mode, each portion can be combined with a portion of another embodiment mode to construct more drawings, and the description of this embodiment mode does not disturb this. .

Note that this embodiment is embodied in a part or all of the contents described in the other embodiments, is slightly modified, partially modified, improved, An example of a case where it is described in detail, applied, or related is shown. Therefore, the contents described in other embodiment modes can be freely applied to this embodiment mode and combined with or replaced with each other.

(Embodiment 3)
In this embodiment, a structure and a manufacturing method of a transistor will be described.

FIGS. 51A to 51G illustrate an example of a structure and a manufacturing method of a transistor. FIG.
FIG. 1A illustrates an example of a structure of a transistor. FIGS. 51B to 51G illustrate an example of a method for manufacturing a transistor.

Note that the structure and manufacturing method of the transistor are not limited to those illustrated in FIGS. 51A to 51G, and various structures and manufacturing methods can be used.

First, an example of a transistor structure is described with reference to FIG. FIG. 51 (A)
FIG. 3 is a cross-sectional view of a transistor having a plurality of different structures. Here, in FIG. 51A, a plurality of transistors having different structures are shown side by side, but this is an expression for explaining the structure of the transistors, and the transistors are actually formed in FIG. They do not have to be juxtaposed as in A), and can be created as needed.

Next, characteristics of each layer constituting the transistor will be described.

As the substrate 110111, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PE
N), it is also possible to use a substrate made of a synthetic resin having flexibility such as plastic or acrylic represented by polyethylene-tersulfone (PES). By using a flexible substrate, a semiconductor device that can be bent can be manufactured. If the substrate has flexibility, the area of the substrate and the shape of the substrate are not greatly limited.
As 111, for example, if one side is 1 meter or more and a rectangular shape is used, the productivity can be remarkably improved. Such an advantage is a great advantage compared to the case of using a circular silicon substrate.

The insulating film 110112 functions as a base film. An alkali metal or alkaline earth metal such as Na is provided from the substrate 110111 in order to prevent adverse effects on the characteristics of the semiconductor element. As the insulating film 110112, an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), or silicon nitride oxide (SiNxOy) (x> y) It is possible to provide a single layer structure or a laminated structure thereof.
For example, in the case where the insulating film 110112 is provided with a two-layer structure, a silicon nitride oxide film may be provided as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. As another example, when the insulating film 110112 is provided with a three-layer structure, a silicon oxynitride film is provided as a first insulating film,
A silicon nitride oxide film may be provided as a second insulating film, and a silicon oxynitride film may be provided as a third insulating film.

The semiconductor layers 110113, 110114, and 110115 can be formed using an amorphous semiconductor or a semi-amorphous semiconductor (SAS). Alternatively, a polycrystalline semiconductor layer may be used. SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystals and polycrystals) and having a third state which is stable in terms of free energy and has a short-range order. It includes a crystalline region having lattice distortion. At least some areas in the membrane
A crystal region of 0.5 to 20 nm can be observed. When silicon is the main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. As a compensation for dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more. The SAS is formed by glow discharge decomposition (plasma CVD) of a material gas. Examples of the material gas include SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , and SiHC.
l ₃ , SiCl ₄ , SiF ₄ or the like can be used. Alternatively, GeF ₄ may be mixed. The material gas H2, or, _{H 2} and He, Ar, Kr, may be diluted with selected one or more kinds of rare gas elements and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As the impurity element in the film, impurity is 1 × ¹⁰ 20 cm of atmospheric constituents, such as carbon ^- desirably set to lower than or equal to 1, in particular, oxygen concentration is 5 × ¹⁰ 19 / cm ³ or less, preferably 1 × 10 ¹⁹ / c
m ³ or less. Here, an amorphous semiconductor layer is formed using a known material (a sputtering method, an LPCVD method, a plasma CVD method, or the like) with a material (eg, SixGe1-x) containing silicon (Si) as a main component. Crystallization of a crystalline semiconductor layer by a known crystallization method such as a laser crystallization method, a thermal crystallization method using an RTA or furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization. Let

The insulating film 110116 includes silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (
A single-layer structure of an insulating film containing oxygen or nitrogen such as SiOxNy) (x> y) or silicon nitride oxide (SiNxOy) (x> y), or a stacked structure thereof can be used.

The gate electrode 110117 can have a single-layer conductive film or a stacked structure of two-layer or three-layer conductive films. As a material of the gate electrode 110117, a known conductive film can be used. For example, a simple film of an element such as tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), silicon (Si), or a nitride film of the element (typically Tantalum nitride film, tungsten nitride film, titanium nitride film), or
An alloy film combining the above elements (typically, a Mo—W alloy or a Mo—Ta alloy) or a silicide film of the above elements (typically, a tungsten silicide film or a titanium silicide film) can be used. Note that the single film, nitride film, alloy film, silicide film, and the like described above may be used as a single layer or may be stacked.

The insulating film 110118 is formed by a known means (such as sputtering or plasma CVD) by using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y).
, An insulating film containing oxygen or nitrogen such as silicon nitride oxide (SiNxOy) (x> y) or DLC (
A single-layer structure of a film containing carbon such as diamond-like carbon) or a laminated structure thereof can be used.

The insulating film 110119 is formed of siloxane resin, silicon oxide (SiOx), silicon nitride (
SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy)
(X> y) such as an insulating film having oxygen or nitrogen, a film containing carbon such as DLC (Diamond Like Carbon), or epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, acrylic, etc. A single layer or a stacked structure of an organic material can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond.
Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Note that the insulating film 110119 can be provided directly so as to cover the gate electrode 110117 without providing the insulating film 110118.

The conductive film 110123 is made of Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, M
A single element film of an element such as n, a nitride film of the element, an alloy film combining the elements, a silicide film of the element, or the like can be used. For example, as an alloy containing a plurality of the elements, an Al alloy containing C and Ti, an Al alloy containing Ni,
An Al alloy containing C and Ni, an Al alloy containing C and Mn, or the like can be used. For example, in the case of providing a stacked structure, a structure in which Al is sandwiched between Mo or Ti can be used. By carrying out like this, the tolerance with respect to the heat | fever and chemical reaction of Al can be improved.

Next, features of each structure will be described with reference to cross-sectional views of a plurality of transistors having different structures shown in FIG.

110101 is a single drain transistor and can be manufactured by a simple method.
There are advantages in that the manufacturing cost is low and the yield can be increased. Here, the semiconductor layer 11011
3 and 110115 have different impurity concentrations, the semiconductor layer 110113 is used as a channel region, and the semiconductor layer 110115 is used as a source region and a drain region. in this way,
The resistivity of the semiconductor layer can be controlled by controlling the amount of impurities. Semiconductor layer and conductive film 110
The electrical connection state with 123 can be brought close to ohmic connection. Note that as a method of separately forming semiconductor layers having different amounts of impurities, a method of doping impurities into the semiconductor layers using the gate electrode 110117 as a mask can be used.

110102 is a transistor having a taper angle of a certain level or more in the gate electrode 110117, and can be manufactured by a simple method, and thus has an advantage that the manufacturing cost is low and the yield is high. Here, the semiconductor layers 110113, 110114, and 110115 have different impurity concentrations, the semiconductor layer 110113 is a channel region, the semiconductor layer 110114 is a lightly doped drain (LDD) region, and the semiconductor layer 110.
115 is used as a source region and a drain region. Thus, the resistivity of the semiconductor layer can be controlled by controlling the amount of impurities. The electrical connection state between the semiconductor layer and the conductive film 110123 can be made close to ohmic connection. Since the LDD region is included, a high electric field is hardly applied to the inside of the transistor, and deterioration of the element due to hot carriers can be suppressed. As a method of separately forming semiconductor layers having different amounts of impurities, the gate electrode 110 can be used.
A method of doping impurities into the semiconductor layer using 117 as a mask can be used. 1
In 10102, since the gate electrode 110117 has a certain taper angle or more, a gradient is given to the concentration of the impurity that passes through the gate electrode 110117 and is doped into the semiconductor layer. And an LDD region can be easily formed.

110103 is a transistor in which the gate electrode 110117 is composed of at least two layers, and the lower gate electrode is longer than the upper gate electrode. In the present specification, the shapes of the upper gate electrode and the lower gate electrode are referred to as a hat shape. Gate electrode 110
Since the shape of 117 is a hat shape, an LDD region can be formed without adding a photomask. Note that, like 110103, the LDD region is the gate electrode 11.
The structure overlapping with 0117, especially the GOLD structure (Gate Overlapped)
LDD). The following method may be used as a method of making the shape of the gate electrode 110117 a hat shape.

First, when patterning the gate electrode 110117, the gate electrode in the lower layer and the gate electrode in the upper layer are etched by dry etching so that the side surfaces are inclined (tapered). . Subsequently, the upper gate electrode is processed to be nearly vertical by anisotropic etching. As a result, a gate electrode having a hat-shaped cross section is formed. Then twice,
A semiconductor layer 1101 used as a channel region is doped by doping an impurity element.
13. A semiconductor layer 110114 used as an LDD region and a semiconductor layer 110115 used as a source electrode and a drain electrode are formed.

Note that the LDD region overlapping the gate electrode 110117 is defined as the Lov region and the gate electrode 11.
An LDD region that does not overlap with 0117 will be referred to as a Loff region. Where Lof
The f region has a high effect of suppressing the off-current value, but has a low effect of relaxing the electric field near the drain and preventing the deterioration of the on-current value due to hot carriers. On the other hand, the Lov region relaxes the electric field near the drain and is effective in preventing deterioration of the on-current value, but has a low effect of suppressing the off-current value. Therefore, it is preferable to manufacture a transistor having a structure corresponding to a required characteristic for each of various circuits. For example, in the case where a semiconductor device is used as a display device, it is preferable to use a transistor having a Loff region as the pixel transistor in order to suppress an off-state current value.
On the other hand, as the transistor in the peripheral circuit, it is preferable to use a transistor having a Lov region in order to relax the electric field in the vicinity of the drain and prevent deterioration of the on-current value.

110104 is in contact with the side surface of the gate electrode 110117 and is connected to the side wall 110121.
A transistor having By having the side wall 110121, an area overlapping with the side wall 110121 can be an LDD area.

110105 performs LDD (Lof) by doping a semiconductor layer using a mask.
f) A transistor in which a region is formed. Thus, the LDD region can be formed reliably and the off-state current value of the transistor can be reduced.

110106 performs LDD (Lov) by doping a semiconductor layer using a mask.
) Transistor in which a region is formed. Thus, the LDD region can be formed reliably, the electric field in the vicinity of the drain of the transistor can be relaxed, and the deterioration of the on-current value can be reduced.

Next, an example of a method for manufacturing a transistor will be described with reference to FIGS.

Note that the structure and manufacturing method of the transistor are not limited to those illustrated in FIGS. 51A to 51C, and various structures and manufacturing methods can be used.

In this embodiment, the insulating film 1 is formed on the surface of the substrate 110111, on the surface of the insulating film 110112, on the surface of the semiconductor layer 110113, on the surface of 110114, and on the surface of 110115.
On the surface of 10116, on the surface of the insulating film 110118, or on the surface of the insulating film 110119,
By oxidizing or nitriding using plasma treatment, the semiconductor layer or the insulating film can be oxidized or nitrided. In this manner, the surface of the semiconductor layer or the insulating film is modified by oxidizing or nitriding the semiconductor layer or the insulating film using plasma treatment, and compared with an insulating film formed by a CVD method or a sputtering method. Since a denser insulating film can be formed, defects such as pinholes can be suppressed and the characteristics of the semiconductor device can be improved.

First, the surface of the substrate 110111 is cleaned using hydrofluoric acid (HF), alkali, or pure water.
As the substrate 110111, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PE
N), it is also possible to use a plastic substrate typified by polyethersulfone (PES) or a substrate made of flexible synthetic resin such as acrylic. Here, the substrate 11
A case where a glass substrate is used as 0111 is shown.

Here, by performing plasma treatment on the surface of the substrate 110111, an oxide film or a nitride film may be formed on the surface of the substrate 110111 by oxidizing or nitriding the surface of the substrate 110111 (FIG. 51B). . Hereinafter, an insulating film such as an oxide film or a nitride film formed by performing plasma treatment on the surface is also referred to as a plasma treatment insulating film. In FIG. 51 (B)
The insulating film 131 is a plasma processing insulating film. In general, when a semiconductor element such as a thin film transistor is provided on a substrate such as glass or plastic, an impurity element such as alkali metal or alkaline earth metal such as Na contained in glass or plastic is mixed in the semiconductor element. Contamination may affect the characteristics of the semiconductor element. However, by nitriding the surface of a substrate made of glass or plastic, it is possible to prevent an impurity element such as an alkali metal or an alkaline earth metal such as Na contained in the substrate from entering the semiconductor element.

Note that when the surface is oxidized by plasma treatment, an oxygen atmosphere (eg, oxygen (O ₂
) And a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, oxygen and hydrogen (H ₂ ) and a rare gas atmosphere, or dinitrogen monoxide and a rare gas atmosphere. )
Plasma treatment is performed at On the other hand, when the semiconductor layer is nitrided by plasma treatment, in a nitrogen atmosphere (for example, nitrogen (N ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, or Plasma treatment is performed in an atmosphere of nitrogen, hydrogen, and a rare gas, or NH ₃ and a rare gas. As the rare gas, for example, Ar can be used. Alternatively, a gas in which Ar and Kr are mixed may be used. Therefore, the plasma processing insulating film includes a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, Ar is contained in the plasma processing insulating film.

In the plasma treatment, the electron density is 1 × 10 ¹¹ cm ⁻³ or more and 1 in the gas atmosphere.
× 10 ¹³ cm ⁻³ or less, and the plasma electron temperature is preferably 0.5 ev to 1.5 eV. Since the electron density of the plasma is high and the electron temperature in the vicinity of the object to be processed is low, damage to the object to be processed by the plasma can be prevented. Since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or higher, an oxide or a nitride film formed by oxidizing or nitriding an irradiation object using plasma treatment can be formed by CVD or sputtering. Compared with a film formed by a method or the like, a film having excellent uniformity in film thickness and the like and a dense film can be formed. Alternatively, since the electron temperature of plasma is as low as 1 eV or less, oxidation or nitridation can be performed at a lower temperature than conventional plasma treatment or thermal oxidation. For example, even if the plasma treatment is performed at a temperature that is 100 degrees or more lower than the strain point temperature of the glass substrate, the oxidation or nitridation treatment can be sufficiently performed. Note that a high frequency such as a microwave (2.45 GHz) can be used as a frequency for forming plasma. Note that the plasma treatment is performed using the above conditions unless otherwise specified.

Note that FIG. 51B illustrates the case where a plasma treatment insulating film is formed by performing plasma treatment on the surface of the substrate 110111; however, in this embodiment, the substrate 11011 is used.
This includes the case where a plasma processing insulating film is not formed on the surface of 1.

Note that in FIGS. 51C to 51G, a plasma treatment insulating film formed by performing plasma treatment on the surface of an object to be processed is not illustrated, but in this embodiment mode, a substrate 11 is used.
0111, insulating film 110112, semiconductor layers 110113, 110114, 110115,
This includes the case where a plasma treatment insulating film formed by performing plasma treatment exists on the surface of the insulating film 110116, the insulating film 110118, or the insulating film 110119.

Next, an insulating film 110112 is formed over the substrate 110111 by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) (FIG. 51C). As the insulating film 110112, silicon oxide (SiOx) or silicon oxynitride (SiOxNy) (x> y) can be used.

Here, a plasma treatment insulating film may be formed on the surface of the insulating film 110112 by performing plasma treatment on the surface of the insulating film 110112 and oxidizing or nitriding the insulating film 110112. By oxidizing the surface of the insulating film 110112, the surface of the insulating film 110112 can be modified to obtain a dense film with few defects such as pinholes. By oxidizing the surface of the insulating film 110112, a plasma processing insulating film with a low N atom content can be formed. Therefore, when a semiconductor layer is provided in the plasma processing insulating film, the interface between the plasma processing insulating film and the semiconductor layer Improved characteristics. Note that the plasma treatment insulating film includes a rare gas (
Including at least one of He, Ne, Ar, Kr, and Xe). Note that the plasma treatment can be similarly performed under the above-described conditions.

Next, island-shaped semiconductor layers 110113 and 110114 are formed over the insulating film 110112 (
FIG. 51 (D)). The island-shaped semiconductor layers 110113 and 110114 are formed on the insulating film 110112 by using a known method (sputtering method, LPCVD method, plasma CVD method, or the like) with silicon (S
An amorphous semiconductor layer is formed using a material having i) as a main component (for example, Si _x Ge _1-x or the like), the amorphous semiconductor layer is crystallized, and the semiconductor layer is selectively etched. Can be provided. Note that the crystallization of the amorphous semiconductor layer may be performed by laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, or these methods. It can carry out by well-known crystallization methods, such as the method of combining these. Note that here, the end portion of the island-shaped semiconductor layer is provided in a shape close to a right angle (θ = 85 to 100 °). Alternatively, the semiconductor layer 110114 serving as a low-concentration drain region is doped with impurities using a mask.
It may be formed by pinging.

Here, the surface of the semiconductor layers 110113 and 110114 is subjected to plasma treatment, so that the semiconductor layer 1
By oxidizing or nitriding the surfaces of 10113 and 110114, the semiconductor layer 11011 is obtained.
3, a plasma treatment insulating film may be formed on the surface of 110114. For example, the semiconductor layer 11
When Si is used for 0113 and 110114, silicon oxide (SiOx) or silicon nitride (SiNx) is formed as the plasma processing insulating film. Alternatively, the semiconductor layers 110113 and 110114 may be oxidized by plasma treatment and then nitrided by performing plasma treatment again. In this case, silicon oxide (SiOx) is formed in contact with the semiconductor layers 110113 and 110114, and silicon nitride oxide (SiNxOy) (x>
y) is formed. Note that in the case of oxidizing the semiconductor layer by plasma treatment, in an oxygen atmosphere (for example, in an atmosphere of oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed in oxygen and hydrogen (H ₂ ) and a rare gas atmosphere or dinitrogen monoxide and a rare gas atmosphere. On the other hand, when the semiconductor layer is nitrided by plasma treatment, nitrogen (N ₂ ) and a rare gas (He, Ne, Ar, Kr, X
including at least one of e), nitrogen, hydrogen and rare gas atmosphere or NH
3 and a rare gas atmosphere). As the rare gas, for example, Ar can be used. Alternatively, a gas in which Ar and Kr are mixed may be used. Therefore, the plasma processing insulating film includes a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, A is used for the plasma processing insulating film.
r is included.

Next, an insulating film 110116 is formed (FIG. 51E). The insulating film 110116 is formed using a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) using silicon oxide (SiOx).
), Silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (
A single-layer structure of an insulating film containing oxygen or nitrogen such as SiNxOy) (x> y) or a stacked structure thereof can be used. Note that in the case where a plasma treatment insulating film is formed on the surfaces of the semiconductor layers 110113 and 110114 by performing plasma treatment on the surfaces of the semiconductor layers 110113 and 110114, the plasma treatment insulating film can be used as the insulating film 110116. .

Here, the plasma treatment insulating film may be formed on the surface of the insulating film 110116 by performing plasma treatment on the surface of the insulating film 110116 and oxidizing or nitriding the surface of the insulating film 110116. Note that the plasma treatment insulating film is formed of a rare gas (He, Ne,
Including at least one of Ar, Kr, and Xe). Note that the plasma treatment can be similarly performed under the above-described conditions.

Alternatively, the insulating film 110116 may be oxidized by performing plasma treatment once in an oxygen atmosphere and then nitrided by performing plasma treatment again in a nitrogen atmosphere. In this manner, by performing plasma treatment on the insulating film 110116 and oxidizing or nitriding the surface of the insulating film 110116, the surface of the insulating film 110116 can be modified and a dense film can be formed. Since the insulating film obtained by performing the plasma treatment is denser and has fewer defects such as pinholes than an insulating film formed by a CVD method or a sputtering method, characteristics of the thin film transistor can be improved.

Next, a gate electrode 110117 is formed (FIG. 51F). The gate electrode 110117 can be formed using a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like).

In 110101, by performing impurity doping after forming the gate electrode 110117, the semiconductor layer 110115 used as a source region and a drain region can be formed.

In 110102, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110103, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110104, a side wall 110121 is formed on the side surface of the gate electrode 110117.
110114 is used as an LDD region by performing impurity doping.
The semiconductor layer 110115 used as the semiconductor layer source region and the drain region can be formed.

The side wall 110121 is made of silicon oxide (SiOx) or silicon nitride (SiNx).
Can be used. As a method of forming the side wall 110121 on the side surface of the gate electrode 110117, for example, after forming the gate electrode 110117, silicon oxide (
A method of etching a silicon oxide (SiOx) or silicon nitride (SiNx) film by anisotropic etching after forming a film of SiOx) or silicon nitride (SiNx) by a known method can be used. Thus, silicon oxide (SiO 2) is formed only on the side surface of the gate electrode 110117.
x) or a silicon nitride (SiNx) film can be left, so that the side wall 110121 can be formed on the side surface of the gate electrode 110117.

In 110105, a mask 110122 is formed so as to cover the gate electrode 110117, and then impurity doping is performed, so that it is used as an LDD (Loff) region 11.
A semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110106, by performing impurity doping after forming the gate electrode 110117, 110114 used as an LDD (Lov) region and a semiconductor layer 110115 used as a semiconductor layer source region and drain region can be formed. .

Next, an insulating film 110118 is formed (FIG. 51G). The insulating film 110118 is formed of silicon oxide (SiOx) or silicon nitride (S) by a known means (such as sputtering or plasma CVD).
iNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (
It can be provided with a single layer structure of an insulating film containing oxygen or nitrogen such as x> y) or a film containing carbon such as DLC (diamond like carbon), or a laminated structure thereof.

Here, a plasma treatment insulating film may be formed on the surface of the insulating film 110118 by performing plasma treatment on the surface of the insulating film 110118 and oxidizing or nitriding the surface of the insulating film 110118. Note that the plasma treatment insulating film is formed of a rare gas (He, Ne,
Including at least one of Ar, Kr, and Xe). Note that the plasma treatment can be similarly performed under the above-described conditions.

Next, an insulating film 110119 is formed. The insulating film 110119 is formed by a known means (sputtering method, plasma CVD method, or the like) using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) ( In addition to insulating films containing oxygen or nitrogen such as x> y) and films containing carbon such as DLC (Diamond Like Carbon), epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene In addition, a single layer structure of an organic material such as acrylic or a siloxane resin, or a laminated structure thereof can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Note that the plasma processing insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, the plasma processing insulating film is used. Ar is contained in the film.

In the case where an organic material such as polyimide, polyamide, polyvinyl phenol, benzocyclobutene, or acrylic, or a siloxane resin is used as the insulating film 110119, the insulating film 110119 is used.
The surface of the insulating film can be modified by oxidizing or nitriding the surface of the insulating film by plasma treatment. By modifying the surface, the strength of the insulating film 110119 is improved, and it is possible to reduce physical damage such as generation of cracks at the time of opening formation or the like and film reduction at the time of etching. The surface of the insulating film 110119 is modified, so that the insulating film 110
When the conductive film 110123 is formed over 119, adhesion with the conductive film is improved. For example,
In the case where siloxane resin is used as the insulating film 110119 and nitridation is performed using plasma treatment, the surface of the siloxane resin is nitrided, so that a plasma-treated insulating film containing nitrogen or a rare gas is formed, and physical strength is improved. .

Next, in order to form the conductive film 110123 electrically connected to the semiconductor layer 110115,
Contact holes are formed in the insulating film 110119, the insulating film 110118, and the insulating film 110116. The contact hole may have a taper shape. By doing this,
The coverage of the conductive film 110123 can be improved.

FIG. 55 illustrates a cross-sectional structure of a bottom-gate transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110502) is formed over the entire surface of the substrate 110501. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

A first conductive layer (a conductive layer 110503 and a conductive layer 110504) is formed over the first insulating film. The conductive layer 110503 includes a portion functioning as the gate electrode of the transistor 110520. The conductive layer 110504 includes a portion functioning as the first electrode of the capacitor 110521. The first conductive layer includes Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A second insulating film (insulating film 110504) is formed so as to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A semiconductor layer is formed by a photolithography method, an inkjet method, a printing method, or the like on a part of the second insulating film which is formed so as to overlap with the first conductive layer. A part of the semiconductor layer is extended to a portion of the second insulating film that is not formed so as to overlap the first conductive layer. The semiconductor layer includes a channel formation region (a channel formation region 1105
10), an LDD region (LDD region 110508, LDD region 110509), and an impurity region (impurity region 110505, impurity region 110506, impurity region 110507). The channel formation region 110510 functions as a channel formation region of the transistor 110520. The LDD region 110508 and the LDD region 110509 function as an LDD region of the transistor 110520. Note that the LDD region 110508 and the LDD region 110509 are not necessarily required. The impurity region 110505 is formed in the transistor 11
0520 includes a portion functioning as one of a source electrode and a drain electrode. Impurity region 1
50506 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110520. The impurity region 110507 includes a portion functioning as the second electrode of the capacitor 110521.

A third insulating film (insulating film 110511) is formed on the entire surface. A contact hole is selectively formed in a part of the third insulating film. The insulating film 110511 has a function as an interlayer film. As the third insulating film, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a low dielectric constant organic compound material (photosensitive or non-photosensitive organic resin material), or the like can be used. Alternatively, a material containing siloxane can be used. Siloxane is a material in which a skeleton structure is formed by a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

A second conductive layer (a conductive layer 110512 and a conductive layer 110513) is formed over the third insulating film. The conductive layer 110512 is connected to the other of the source electrode and the drain electrode of the transistor 110520 through a contact hole formed in the third insulating film. Therefore, the conductive layer 110512 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110520. The conductive layer 110513 includes a portion functioning as the first electrode of the capacitor 110521. As the second conductive layer, Ti, Mo, Ta
, Cr, W, Al, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, G
e or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

The structure of the transistor and the capacitor in the case where an amorphous silicon (a-Si: H) film is used for the semiconductor layer of the transistor is described.

FIG. 52 shows a cross-sectional structure of a top gate transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110202) is formed over the entire surface of the substrate 110201. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

Note that the first insulating film is not necessarily formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110203, a conductive layer 110204, and a conductive layer 110205) is formed over the first insulating film. The conductive layer 110203 includes a portion functioning as one of a source electrode and a drain electrode of the transistor 110220. Conductive layer 11020
4 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110220. The conductive layer 110205 includes a portion functioning as the first electrode of the capacitor 110221. The first conductive layer includes Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A first semiconductor layer (semiconductor layer 110) is formed over the conductive layer 110203 and the conductive layer 110204.
206 and semiconductor layer 110207). The semiconductor layer 110206 includes a portion that functions as one of a source electrode and a drain electrode. The semiconductor layer 110207 includes
A portion functioning as the other of the source electrode and the drain electrode is included. Note that as the first semiconductor layer, silicon containing phosphorus or the like can be used.

The second layer is formed between the conductive layer 110203 and the conductive layer 110204 and over the first insulating film.
The semiconductor layer (semiconductor layer 110208) is formed. Then, the semiconductor layer 110208
Is extended to the top of the conductive layer 110203 and the conductive layer 110204. The semiconductor layer 110208 includes a portion functioning as a channel region of the transistor 110220. Note that as the second semiconductor layer, an amorphous semiconductor layer such as amorphous silicon (a-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used. .

In order to cover at least the semiconductor layer 110208 and the conductive layer 110205, the second insulating film (
An insulating film 110209 and an insulating film 110210) are formed. The second insulating film is a gate
A function as an insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the second semiconductor layer. This is because the trap level at the interface between the second semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A second conductive layer (a conductive layer 110211 and a conductive layer 110212) is formed over the second insulating film. The conductive layer 110211 includes a portion functioning as a gate electrode of the transistor 110220. The conductive layer 110212 functions as the second electrode or the wiring of the capacitor 110221. As the second conductive layer, Ti, Mo, Ta, Cr, W, A
l, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

FIG. 53 shows a cross-sectional structure of an inverted staggered (bottom gate) transistor and a cross-sectional structure of a capacitor. In particular, the transistor illustrated in FIG. 53 has a structure called a channel etch type.

A first insulating film (insulating film 110302) is formed over the entire surface of the substrate 110301. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

Note that the first insulating film is not necessarily formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110303 and a conductive layer 110304) is formed over the first insulating film. The conductive layer 110303 includes a portion functioning as a gate electrode of the transistor 110320. The conductive layer 110304 includes a portion functioning as the first electrode of the capacitor 110321. As the first conductive layer, Ti, Mo, TB, Cr, W, Bl, N
d, Cu, Bg, Bu, Pt, NA-Si, Zn, Fe, BB, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A second insulating film (insulating film 110302) is formed so as to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

The first semiconductor layer (semiconductor layer 11) is formed on a part of the second insulating film which is formed so as to overlap with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0306) is formed. A part of the semiconductor layer 110308 is extended to a portion of the second insulating film that is not formed so as to overlap with the first conductive layer. Semiconductor layer 11
0306 includes a portion functioning as a channel region of the transistor 110320. Note that as the semiconductor layer 110306, an amorphous semiconductor layer such as amorphous silicon (A-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used.

The second semiconductor layer (semiconductor layer 110307 and semiconductor layer 110 is formed over part of the first semiconductor layer.
307) is formed. The semiconductor layer 110307 includes a portion that functions as one of a source electrode and a drain electrode. The semiconductor layer 110308 includes a portion that functions as the other of the source electrode and the drain electrode. Note that as the second conductor layer, silicon containing phosphorus or the like can be used.

A second conductive layer (a conductive layer 110309, a conductive layer 1) is formed over the second semiconductor layer and the second insulating film.
10310 and a conductive layer 110311). The conductive layer 110309 includes a portion functioning as one of a source electrode and a drain electrode of the transistor 110320. The conductive layer 110310 includes a portion functioning as the other of the source and the drain electrode of the transistor 110320. The conductive layer 110312 includes a portion functioning as the second electrode of the capacitor 110321. As the second conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

Here, an example of a process characterized by a channel etch transistor will be described. The first semiconductor layer and the second semiconductor layer can be formed using the same mask. In particular,
The first semiconductor layer and the second semiconductor layer are continuously formed. The first semiconductor layer and the second semiconductor layer are formed using the same mask.

Another example of a process characterized by a channel etch transistor will be described. The channel region of the transistor can be formed without using a new mask. In particular,
After the second conductive layer is formed, part of the second semiconductor layer is removed using the second conductive layer as a mask. Alternatively, part of the second semiconductor layer is removed using the same mask as the second conductive layer. Then, the first semiconductor layer formed under the removed second semiconductor layer becomes a channel region of the transistor.

FIG. 54 shows a cross-sectional structure of an inverted staggered (bottom gate) transistor and a cross-sectional structure of a capacitor. In particular, the transistor illustrated in FIG. 54 has a structure called a channel protection type (channel stop type).

A first insulating film (insulating film 110402) is formed over the entire surface of the substrate 110401. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

Note that the first insulating film is not necessarily formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110403 and a conductive layer 110404) is formed over the first insulating film. The conductive layer 110403 includes a portion functioning as a gate electrode of the transistor 110420. The conductive layer 110404 includes a portion functioning as the first electrode of the capacitor 110421. As the first conductive layer, Ti, Mo, TC, Cr, W, Cl, N
d, Cu, Cg, Cu, Pt, NC, Si, Zn, Fe, CC, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A second insulating film (insulating film 110402) is formed so as to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

The first semiconductor layer (semiconductor layer 11) is formed on a part of the second insulating film which is formed so as to overlap with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0406) is formed. A part of the semiconductor layer 110408 is extended to a portion of the second insulating film which is not formed so as to overlap with the first conductive layer. Semiconductor layer 11
0406 includes a portion functioning as a channel region of the transistor 110420. Note that as the semiconductor layer 110406, an amorphous semiconductor layer such as amorphous silicon (C—Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used.

A third insulating film (insulating film 110412) is formed over part of the first semiconductor layer. The insulating film 110412 has a function of preventing the channel region of the transistor 110420 from being removed by etching. That is, the insulating film 110412 functions as a channel protective film (channel stop film). Note that as the third insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

A second semiconductor layer (semiconductor layer 110) is formed on a part of the first semiconductor layer and a part of the third insulating film.
407 and semiconductor layer 110408). The semiconductor layer 110407 includes a portion that functions as one of a source electrode and a drain electrode. The semiconductor layer 110408 includes:
A portion functioning as the other of the source electrode and the drain electrode is included. Note that as the second conductor layer, silicon containing phosphorus or the like can be used.

A second conductive layer (a conductive layer 110409, a conductive layer 110410, and a conductive layer 110411) is formed over the second semiconductor layer. The conductive layer 110409 includes the transistor 110420.
A portion functioning as one of the source electrode and the drain electrode. The conductive layer 110410 includes
A portion functioning as the other of the source and the drain electrode of the transistor 110420 is included. The conductive layer 110412 includes a portion functioning as the second electrode of the capacitor 110421. As the second conductive layer, Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, A
u, Pt, NC, Si, Zn, Fe, Ca, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

Here, an example of a process characterized by a channel protection transistor will be described. The first semiconductor layer, the second semiconductor layer, and the second conductive layer can be formed using the same mask.
At the same time, a channel region can be formed. Specifically, the first semiconductor layer is formed,
Next, a third insulating film (a channel protective film and a channel stop film) is formed using a mask, and then a second semiconductor layer and a second conductive layer are successively formed. Then, after the second conductive layer is formed, the first semiconductor layer, the second semiconductor layer, and the second conductive layer are formed using the same mask. However, since the first semiconductor layer below the third insulating film is protected by the third insulating film, it is not removed by etching. This portion (the third of the first semiconductor layer
The portion where the insulating film is formed becomes a channel region.

Next, an example in which a semiconductor substrate is used as a substrate for manufacturing a transistor will be described. Since a transistor manufactured using a semiconductor substrate has high mobility, the transistor size can be reduced. As a result, the number of transistors per unit area can be increased (the degree of integration can be increased), and in the same circuit configuration, the larger the degree of integration, the smaller the substrate size, and thus the manufacturing cost can be reduced. Furthermore, since the circuit scale can be increased as the degree of integration increases with the same substrate size, the manufacturing cost remains substantially the same and higher functions can be provided. In addition, because there is little variation in characteristics,
The production yield can also be increased. Furthermore, since the operating voltage is low, power consumption can be reduced. Furthermore, high mobility is possible due to high mobility.

A circuit formed by integrating transistors manufactured using a semiconductor substrate is mounted on a device in the form of an IC chip or the like, so that the device can have various functions. For example, peripheral drive circuits (data drivers (source drivers), scan drivers (gate drivers), timing controllers, image processing circuits, interface circuits, power supply circuits, oscillation circuits, etc.) of display devices are manufactured using a semiconductor substrate. By integrating transistors, a peripheral driver circuit that is small in size, low in power consumption, and capable of high-speed operation can be manufactured at low cost and high yield. Note that a circuit formed by integrating transistors manufactured using a semiconductor substrate may have a single polarity transistor. By doing so, the manufacturing process can be simplified, and the manufacturing cost can be reduced.

Other circuits that are configured by integrating transistors manufactured using a semiconductor substrate include:
For example, it can be used for a display panel. More specifically, LCOS (Liquid
It can be used for reflective liquid crystal panels such as Crystal On Silicon, DMD (Digital Micromirror Device) elements in which micromirrors are integrated, EL panels, and the like. By manufacturing these display panels using a semiconductor substrate, a display panel that is small in size, low in power consumption, and capable of high speed operation can be manufactured at low cost and high yield. Note that the display panel includes a display panel formed on an element having a function other than driving of the display panel, such as a large scale integrated circuit (LSI).

A method for manufacturing a transistor using a semiconductor substrate will be described below.

First, regions 110604 and 110606 (hereinafter also referred to as regions 110604 and 110606) in which elements are separated are formed in the semiconductor substrate 110600 (see FIG. 56A). The regions 110604 and 110606 provided in the semiconductor substrate 110600 are respectively insulating films 1
They are separated by 10602 (also referred to as a field oxide film). Here, a single crystal Si substrate having n-type conductivity is used as the semiconductor substrate 110600, and the semiconductor substrate 1106 is used.
In this example, a p-well 110607 is provided in the 00 area 110606.

The substrate 110600 can be used without any particular limitation as long as it is a semiconductor substrate. For example, an n-type or p-type single crystal Si substrate, compound semiconductor substrate (GaAs substrate, I
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by Implanted Oxygen)
An SOI (Silicon on Insulator) substrate or the like manufactured using a method can be used.

The element isolation regions 110604 and 110606 are formed by a selective oxidation method (LOCOS (Local
(Oxidation of Silicon) method) or trench isolation method can be used as appropriate.

The p-well formed in the region 110606 of the semiconductor substrate 110600 is the semiconductor substrate 11
0600 can be formed by selectively introducing an impurity element having p-type conductivity. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used.

Note that in this embodiment, since a semiconductor substrate having n-type conductivity is used as the semiconductor substrate 110600, no impurity element is introduced into the region 110604, but an impurity element exhibiting n-type is introduced. Thus, an n-well may be formed in the region 110604. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. on the other hand,
In the case where a semiconductor substrate having p-type conductivity is used, an n-well may be formed by introducing an n-type impurity element into the region 110604 and the impurity element may not be introduced into the region 110606.

Next, insulating films 110632 and 11063 are formed so as to cover the regions 110604 and 110606.
4 are formed (see FIG. 56B).

The insulating films 110632 and 110634 are subjected to, for example, heat treatment to perform the semiconductor substrate 110600.
The insulating films 110632 and 110634 can be formed using silicon oxide films by oxidizing the surfaces of the regions 110604 and 110606 provided in the regions. After a silicon oxide film is formed by a thermal oxidation method, the surface of the silicon oxide film is nitrided by performing a nitriding process, thereby forming a stacked structure of a silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film). It may be formed.

In addition, as described above, the insulating films 110632 and 110634 may be formed by plasma treatment. For example, the regions 110604 and 11 provided in the semiconductor substrate 110600
By performing oxidation treatment or nitridation treatment on the surface of 0606 by high-density plasma treatment, a silicon oxide (SiOx) film or silicon nitride (SiNx) is formed as the insulating films 110632 and 110634.
) It can be formed with a film. As another example, region 110604 may be formed by high density plasma treatment.
, 110606 may be subjected to nitriding treatment by performing high-density plasma treatment again after performing oxidation treatment on the surface of 110606. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 110604 and 110606, a (silicon oxynitride film) is formed on the silicon oxide film, and the insulating film 110
Reference numerals 632 and 110634 denote films in which a silicon oxide film and a silicon oxynitride film are stacked. As another example, a silicon oxide film may be formed on the surface of the regions 110604 and 110606 by a thermal oxidation method, and then oxidation treatment or nitridation treatment may be performed by high-density plasma treatment.

Insulating film 1106 formed in regions 110604 and 110606 of semiconductor substrate 110600
32 and 110634 function as a gate insulating film in a transistor to be completed later.

Next, insulating films 110632 and 11063 formed in the regions 110604 and 110606 are formed.
4 is formed so as to cover 4 (see FIG. 56C). Here, an example is shown in which a conductive film 110636 and a conductive film 110638 are sequentially stacked as the conductive film. Needless to say, the conductive film may be formed of a single layer or a stacked structure of three or more layers.

As the conductive films 110636 and 110638, tantalum (Ta), tungsten (W)
, Titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (
It can be formed of an element selected from Cr), niobium (Nb), or the like, or an alloy material or a compound material containing these elements as main components. Alternatively, a metal nitride film obtained by nitriding these elements can be used. In addition, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus, silicide introduced with a metal material, or the like can be used.

Here, tantalum nitride is used for the conductive film 110636, and the conductive film 11063 is used.
8 is a laminated structure using tungsten. In addition, as the conductive film 110636,
A single layer or a stacked film selected from tungsten nitride, molybdenum nitride, or titanium nitride can be used. As the conductive film 110638, a single layer or a stacked film selected from tantalum, molybdenum, and titanium can be used.

Next, the conductive films 110636 and 110638 provided in a stacked manner are selectively etched and removed, so that the conductive films 110636 are formed in part of the regions 110604 and 110606.
110638 are left to form gate electrodes 110640 and 110642, respectively (see FIG. 57A).

Next, a resist mask 110648 is selectively formed so as to cover the region 110604,
The region 1106 is formed using the resist mask 110648 and the gate electrode 110642 as a mask.
Impurity regions 110652 are formed by introducing impurity elements into 06 (FIG. 57 (
B)). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, phosphorus (P) is used as the impurity element. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

In FIG. 57B, an impurity region 110652 which forms a source or drain region in a region 110606 and a channel formation region 11065 by introducing an impurity element.
0 is formed.

Next, a resist mask 110666 is selectively formed so as to cover the region 110606,
The region 1106 is formed using the resist mask 110666 and the gate electrode 110640 as a mask.
Impurity region 110670 is formed by introducing an impurity element into 04 (FIG. 57 (
C)). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, an impurity element (eg, boron (B)) having a conductivity type different from that of the impurity element introduced into the region 110606 in FIG. 57C is introduced. As a result, the impurity region 11 forming a source or drain region in the region 110604 is formed.
0670 and a channel formation region 110668 are formed. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, a second insulating film 110672 is formed so as to cover the insulating films 110632 and 110634 and the gate electrodes 110640 and 110642. In addition, areas 110604, 1106
A wiring 110474 is formed to be electrically connected to the impurity regions 110652 and 110670 formed in 06 (see FIG. 57D).

The second insulating film 110672 is formed of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, Silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (S
Insulating films containing oxygen or nitrogen such as iNxOy) (x> y), films containing carbon such as DLC (Diamond Like Carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or siloxane It can be provided in a single layer or a laminated structure made of a siloxane material such as a resin. The siloxane material is S
It corresponds to a material containing i-O-Si bond. Siloxane is composed of silicon (Si) and oxygen (O).
And a skeleton structure is formed by the bond. As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

The wiring 110684 is formed of aluminum (Al), CVD, sputtering, or the like.
Tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn),
An element selected from neodymium (Nd), carbon (C), and silicon (Si), or an alloy material or a compound material containing these elements as a main component is formed in a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The wiring 110684 includes, for example, a barrier film and aluminum silicon (
Laminated structure of Al-Si) film and barrier film, barrier film and aluminum silicon (Al-Si)
A stacked structure of a film, a titanium nitride (TiN) film, and a barrier film may be employed. Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Since aluminum and aluminum silicon have low resistance and are inexpensive, the wiring 11
It is most suitable as a material for forming 0674. For example, when an upper layer and a lower barrier layer are provided,
Occurrence of hillocks in aluminum or aluminum silicon can be prevented. For example, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced. As a result, the wiring 1106
74 can be electrically and physically well connected to the crystalline semiconductor film.

Note that the structure of the transistor is not limited to the illustrated structure. For example, a transistor structure such as an inverted stagger structure or a fin FET structure can be employed. The fin FET structure is preferable because the short channel effect accompanying the miniaturization of the transistor size can be suppressed.

Next, another example using a semiconductor substrate as a substrate for manufacturing a transistor will be described.

First, an insulating film is formed over the substrate 110800. Here, single crystal Si having n-type conductivity is used as the substrate 110800, and the insulating film 110802 and the insulating film 110804 are formed over the substrate 110800 (see FIG. 58A). For example, heat treatment is performed on the substrate 110800 to form silicon oxide (SiOx) as the insulating film 110802. In addition, C
Silicon nitride (SiNx) is formed using a VD method or the like.

The substrate 110800 can be used without any particular limitation as long as it is a semiconductor substrate. For example, an n-type or p-type single crystal Si substrate, compound semiconductor substrate (GaAs substrate, I
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by IMplanted Oxygen)
An SOI (Silicon on Insulator) substrate or the like manufactured using a method can be used.

The insulating film 110804 may be provided by nitriding the insulating film 110802 by high-density plasma treatment after the insulating film 110802 is formed. The insulating film is a single layer or 3
A laminated structure of more than one layer may be used.

Next, a pattern of a resist mask 110806 is selectively formed, and selective etching is performed using the resist mask 110806 as a mask, whereby the substrate 110800 is formed.
A recess 110808 is selectively formed (see FIG. 58B). Etching of the substrate 110800 and the insulating films 110802 and 110804 can be performed by dry etching using plasma.

Next, after removing the pattern of the resist mask 110806, an insulating film 110810 is formed so as to fill the concave portion 110808 formed in the substrate 110800 (FIG. 58C).
reference).

The insulating film 110810 is formed using silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x>y> 0), silicon nitride oxide (Si) by a CVD method, a sputtering method, or the like.
NxOy) (x>y> 0) or the like is used. Here, the insulating film 11081
As 0, a silicon oxide film is formed using TEOS (tetraethylorthosilicate) gas by an atmospheric pressure CVD method or a low pressure CVD method.

Next, grinding treatment, polishing treatment or CMP (Chemical Mechanical P
The surface of the substrate 110800 is exposed by performing an (olishing) process. Then, the surface of the substrate 110800 is divided by the insulating film 110810 formed in the recess 110808 of the substrate 110800. Here, the divided areas are referred to as areas 110812 and 11081, respectively. Note that the insulating film 110811 is obtained by removing part of the insulating film 110810 by grinding, polishing, or CMP.

Subsequently, by selectively introducing an impurity element having p-type conductivity, the substrate 11
A p-well 110815 is formed in a region 110813 of 0800. As the p-type impurity element, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Here, boron (B) is introduced into the region 110813 as the impurity element. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Note that when a semiconductor substrate having n-type conductivity is used as the substrate 110800, the region 1
An impurity element does not need to be introduced into 10812, but an n-well may be formed in the region 110812 by introducing an impurity element exhibiting n-type conductivity. As the impurity element exhibiting n-type, phosphorus (P), arsenic (As), or the like can be used.

On the other hand, in the case where a semiconductor substrate having p-type conductivity is used, an n-type impurity element is introduced into the region 110812 to form an n-well, and no impurity element is introduced into the regions 110812 and 110813. It is good.

Next, an insulating film 11083 is formed on the surfaces of the regions 110812 and 11081 of the substrate 110800.
2 and 110834 are formed (see FIG. 59B).

The insulating films 110832 and 110834 can be formed using silicon oxide films by oxidizing the surfaces of the regions 110812 and 110813 provided in the substrate 110800 by performing heat treatment, for example. Alternatively, after a silicon oxide film is formed by a thermal oxidation method, the surface of the silicon oxide film is nitrided by performing nitriding treatment, so that a silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film) are stacked. You may form with a structure.

In addition, as described above, the insulating films 110832 and 110834 may be formed by plasma treatment. For example, regions 110812 and 11081 provided in the substrate 110800
By performing oxidation treatment or nitridation treatment on the surface of 3 by high-density plasma treatment, the insulating film 1
10832 and 110834 can be formed of a silicon oxide (SiOx) film or a silicon nitride (SiNx) film. As another example, regions 110812, 1 are formed by high-density plasma treatment.
After the surface of 10813 is oxidized, nitriding may be performed by performing high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 110812 and 11081, a (silicon oxynitride film) is formed over the silicon oxide film, and the insulating film 1108
32 and 11083 are films in which a silicon oxide film and a silicon oxynitride film are stacked. As another example, a silicon oxide film may be formed on the surfaces of the regions 110812 and 110813 by a thermal oxidation method, and then oxidation treatment or nitridation treatment may be performed by high-density plasma treatment.

Note that the insulating film 110 formed in the regions 110812 and 11081 of the substrate 110800
Reference numerals 832 and 11083 function as gate insulating films in transistors to be completed later.

Next, a conductive film is formed so as to cover the insulating films 110832 and 110834 formed in the regions 110812 and 11083 provided in the substrate 110800 (see FIG. 59C).
Here, an example is shown in which a conductive film 110836 and a conductive film 110838 are sequentially stacked as the conductive film. Needless to say, the conductive film may be formed of a single layer or a stacked structure of three or more layers.

As the conductive films 110836 and 110838, tantalum (Ta), tungsten (W)
, Titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (
It can be formed of an element selected from Cr), niobium (Nb), or the like, or an alloy material or a compound material containing these elements as main components. Alternatively, a metal nitride film obtained by nitriding these elements can be used. In addition, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus, silicide introduced with a metal material, or the like can be used.

Here, tantalum nitride is used for the conductive film 110836, and the conductive film 110838 is used.
As a laminated structure using tungsten. In addition, as the conductive film 110836, a single layer or a stacked film selected from tantalum nitride, tungsten nitride, molybdenum nitride, or titanium nitride can be used. As the conductive film 110838, a single layer or a stacked film selected from tungsten, tantalum, molybdenum, and titanium can be used.

Next, the conductive films 110836 and 110838 provided in a stacked manner are selectively etched and removed, whereby the conductive films 110836 and 110838 are left in part of the regions 110812 and 110813 of the substrate 110800, respectively. Functional conductive films 110840 and 110842 are formed (see FIG. 59D). Here, the conductive film 11
In a region that does not overlap with 0840 and 110842, the surface of the substrate 110800 is exposed.

Specifically, in the region 110812 of the substrate 110800, a portion of the insulating film 110832 that does not overlap with the conductive film 110840 is selectively removed so that the end portions of the conductive film 110840 and the insulating film 11083 are approximately aligned. Further, region 1800 of substrate 110800
In 10813, a portion of the insulating film 11083 that does not overlap with the conductive film 110842 is selectively removed, so that the end portions of the conductive film 110842 and the insulating film 110834 are approximately aligned.

In this case, a portion of the insulating film that does not overlap with the conductive films 110840 and 110842 may be removed at the same time, or the resist mask remaining after the conductive films 110840 and 110842 are formed or the conductive films 110840 and 110842 are used as a mask. A portion of the insulating film that does not become necessary may be removed.

Next, an impurity element is selectively introduced into the regions 110812 and 110813 of the substrate 110800 (see FIG. 60A). Here, a low-concentration impurity element imparting n-type conductivity is selectively introduced into the region 110833 using the conductive film 110842 as a mask, and a low-concentration impurity element imparting p-type conductivity is selected into the region 110812 using the conductive film 110840 as a mask. Introduced.
As the impurity element imparting n-type conductivity, phosphorus (P), arsenic (As), or the like can be used. As the impurity element imparting p-type conductivity, boron (B), aluminum (Al), gallium (Ga), or the like can be used. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, the sidewall 110854 in contact with the side surfaces of the conductive films 110840 and 110842
Form. Specifically, a film containing an inorganic material such as silicon, silicon oxide, or silicon nitride, or a film containing an organic material such as an organic resin is formed in a single layer or stacked layers by a plasma CVD method, a sputtering method, or the like. Form. Then, the insulating film can be selectively etched by anisotropic etching mainly in the vertical direction so as to be in contact with the side surfaces of the conductive films 110840 and 110842. Note that the sidewall 110854 has an LDD (Light
It is used as a mask for doping when forming a (ly doped drain) region. Here, the sidewall 110854 is formed so as to be in contact with the side surface of the insulating film or the floating gate electrode formed below the conductive films 110840 and 110842.

Subsequently, an impurity element functioning as a source or drain region is formed by introducing an impurity element into the regions 110812 and 11083 of the substrate 110800 using the sidewall 110854 and the conductive films 110840 and 110842 as masks (FIG. 60B).
)reference). Here, a sidewall 11085 is formed in a region 11083 of the substrate 110800.
4 and the conductive film 110842 as a mask, an impurity element imparting a high concentration of n-type is introduced, and an impurity element imparting a high concentration of p-type is introduced into the region 110812 using the sidewall 110854 and the conductive film 110840 as a mask.

As a result, an impurity region 110858 for forming a source or drain region, a low-concentration impurity region 110860 for forming an LDD region, and a channel formation region 110856 are formed in the region 110812 of the substrate 110800. Then, the region 110 of the substrate 110800
In 813, an impurity region 110864 that forms a source or drain region, a low-concentration impurity region 110866 that forms an LDD region, and a channel formation region 110862 are formed.

Although an example in which the LDD region is formed using a sidewall is shown here, the present invention is not limited to this. The LDD region may be formed using a mask or the like without using the sidewall, or the LDD region may not be formed. When the LDD region is not formed, the manufacturing process can be simplified, so that the manufacturing cost can be reduced.

Note that here, in the region which does not overlap with the conductive films 110840 and 110842, the substrate 1
The impurity element is introduced with the surface of 10800 exposed. Therefore, the substrate 11
Channel formation regions 11 formed in 0800 regions 110812 and 11081, respectively.
0856 and 110862 can be formed using the conductive films 110840 and 110842 in a self-aligning manner.

Next, a second insulating film 110877 is formed so as to cover insulating films, conductive films, and the like provided in the regions 110812 and 11083 of the substrate 110800, and an opening 110878 is formed in the insulating film 110877 (FIG. 60C )reference).

The second insulating film 110877 is formed of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, Silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (S
Insulating films containing oxygen or nitrogen such as iNxOy) (x> y), films containing carbon such as DLC (Diamond Like Carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or siloxane It can be provided in a single layer or a laminated structure made of a siloxane material such as a resin. The siloxane material is S
It corresponds to a material containing i-O-Si bond. Siloxane is composed of silicon (Si) and oxygen (O).
And a skeleton structure is formed by the bond. As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

Next, a conductive film 110880 is formed in the opening 110878 using a CVD method, and the conductive film 110882a is formed over the insulating film 110877 so as to be electrically connected to the conductive film 110880.
To 110882d are selectively formed (see FIG. 60D).

The conductive films 110880 and 110882a to 110882d are formed of aluminum (Al), tungsten (W), titanium (Ti), tantalum (not shown) by a CVD method, a sputtering method, or the like.
Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au
), Silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si
), Or an alloy material or a compound material containing these elements as main components. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. Conductive film 110880, 110
882a to 110882d are, for example, a barrier film and aluminum silicon (Al—Si)
A stacked structure of a film and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (TiN) film, and a barrier film may be employed. The barrier film is titanium,
It corresponds to a thin film made of titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 110880 because they have low resistance and are inexpensive. For example, when an upper barrier layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. For example, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced and the crystalline semiconductor film is excellent. Contact can be made. Here, the conductive film 110880 is formed of tungsten (W
) Can be formed by selective growth.

Through the above steps, a p-type transistor formed in the region 110812 of the substrate 110800 and an n-type transistor formed in the region 110810 can be obtained.

Note that the structure of the transistor constituting the transistor of the present invention is not limited to the illustrated structure. For example, a transistor structure such as an inverted stagger structure or a fin FET structure can be employed. The fin FET structure is preferable because the short channel effect accompanying the miniaturization of the transistor size can be suppressed.

Up to this point, the structure of the transistor and the method for manufacturing the transistor have been described. here,
Wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium ( Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag)
, Copper (Cu), magnesium (Mg), scandium (Sc), cobalt (C
o), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn)
), One or more elements selected from the group consisting of oxygen (O), or a compound or alloy material containing one or more elements selected from the group (for example, indium tin oxide) (ITO), indium zinc oxide (IZO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO), tin cadmium oxide (CTO)
), Aluminum neodymium (Al—Nd), magnesium silver (Mg—Ag), molybdenum niobium (Mo—Nb), and the like. Alternatively, the wiring, the electrode, the conductive layer, the conductive film, the terminal, and the like are preferably formed using a substance in which these compounds are combined. Alternatively, a compound (silicide) of one or more elements selected from the above group and silicon (eg, aluminum silicon, molybdenum silicon, nickel silicide)
It is desirable to form a compound containing one or more elements selected from the above group and nitrogen (for example, titanium nitride, tantalum nitride, molybdenum nitride, etc.).

Note that silicon (Si) may contain an n-type impurity (such as phosphorus) or a p-type impurity (such as boron). When silicon contains impurities, the conductivity can be improved or the same behavior as a normal conductor can be achieved. Therefore, it becomes easy to use as wiring, electrodes, and the like.

Note that silicon having various crystallinity such as single crystal, polycrystal (polysilicon), and microcrystal (microcrystal silicon) can be used. Alternatively, silicon having no crystallinity such as amorphous (amorphous silicon) can be used. By using single crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers,
Resistance of conductive films, terminals, etc. can be reduced. By using amorphous silicon or microcrystalline silicon, a wiring or the like can be formed by a simple process.

Note that since aluminum or silver has high conductivity, signal delay can be reduced. Further, since etching is easy, patterning is easy and fine processing can be performed.

Note that since copper has high conductivity, signal delay can be reduced. When copper is used, it is desirable to have a laminated structure in order to improve adhesion.

Molybdenum or titanium is preferable because it has advantages such as no defects, easy etching, and high heat resistance even when in contact with an oxide semiconductor (ITO, IZO, or the like) or silicon.

Tungsten is desirable because it has advantages such as high heat resistance.

Neodymium is desirable because it has advantages such as high heat resistance. In particular, when an alloy of neodymium and aluminum is used, the heat resistance is improved, and aluminum does not easily cause hillocks.

Silicon is preferable because it can be formed at the same time as a semiconductor layer included in a transistor and has high heat resistance.

In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S
nO) and tin cadmium oxide (CTO) have a light-transmitting property, and thus can be used for a portion that transmits light. For example, it can be used as a pixel electrode or a common electrode.

Note that IZO is desirable because it is easy to etch and process. It is difficult for IZO to leave a residue when it is etched. Therefore, when IZO is used as the pixel electrode, it is possible to reduce the occurrence of defects (short circuit, alignment disorder, etc.) in the liquid crystal element and the light emitting element.

Note that the wiring, electrode, conductive layer, conductive film, terminal, via, plug, and the like may have a single-layer structure,
It may have a multilayer structure. With a single-layer structure, a manufacturing process of wiring, electrodes, conductive layers, conductive films, terminals, and the like can be simplified, the number of process days can be reduced, and cost can be reduced. Alternatively, by using a multilayer structure, it is possible to reduce the demerits while making use of the merits of each material, and to form wirings, electrodes, and the like with good performance.
For example, by including a low resistance material (such as aluminum) in the multilayer structure, the resistance of the wiring can be reduced. As another example, it is possible to increase the heat resistance of wiring, electrodes, etc. while taking advantage of the low heat resistant material by making a laminated structure in which a low heat resistant material is sandwiched between high heat resistant materials. I can do it. For example, a layered structure in which a layer containing aluminum is sandwiched between layers containing molybdenum, titanium, neodymium, or the like is preferable.

Here, when wires, electrodes, etc. are in direct contact with each other, they may adversely affect each other. For example, one wiring, an electrode, or the like enters a material such as the other wiring, an electrode, etc., which changes the properties and cannot fulfill its original purpose. As another example, when a high resistance portion is formed or manufactured, a problem may occur and the manufacturing may not be performed normally. In such a case, it is preferable to sandwich or cover a material that reacts more easily by a laminated structure with a material that does not react easily. For example, when ITO and aluminum are connected, it is desirable to sandwich titanium, molybdenum, or a neodymium alloy between ITO and aluminum. As another example, when silicon and aluminum are connected, it is desirable to sandwich titanium, molybdenum, or a neodymium alloy between ITO and aluminum.

In addition, wiring means what the conductor is arrange | positioned. It may extend linearly or may be arranged short without extending. Therefore, the electrode is included in the wiring.

Note that carbon nanotubes may be used for wirings, electrodes, conductive layers, conductive films, terminals, vias, plugs, and the like. Furthermore, since the carbon nanotube has translucency, it can be used in a portion that transmits light. For example, it can be used as a pixel electrode or a common electrode.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 4)
In this embodiment, a structure of a display device is described.

A structure of the display device is described with reference to FIG. FIG. 61A is a top view of a display device.

Pixel portion 170101, scan line side input terminal 170103, and signal line side input terminal 170104
Are formed on the substrate 170100, scanning lines are formed on the substrate 170100 from the scanning line side input terminals 170103 in the row direction, and signal lines are formed on the substrate 170100 in the column direction from the signal line side input terminals 170104. 170100 is formed. The pixels 170102 are arranged in a matrix where the scanning lines and the signal lines intersect with the pixel portion 170101.

The scanning line side input terminals 170103 are formed on both sides of the substrate 170100 in the row direction.
The scanning lines extending from one scanning line side input terminal 170103 and the scanning lines extending from the other scanning line side input terminal 170103 are alternately formed. In this case, pixel 1
Since 70102 can be arranged with high density, a high-definition display device can be obtained. However, the present invention is not limited to this, and the scanning line side input terminal 170103 may be formed only on one side of the substrate 170100 in the row direction. In this case, the frame of the display device can be reduced. The region of the pixel portion 170101 can be enlarged. As another example, a scanning line extending from one scanning line side input terminal 170103 and the other scanning line side input terminal 170103 are provided.
And a scanning line extending from may be common. In this case, it is suitable for a display device having a large scanning line load, such as a large display device. Note that a signal is input to the scan line from the external driver circuit through the scan line side input terminal 170103.

The signal line side input terminal 170104 is formed on one side of the substrate 170100 in the column direction.
In this case, the frame of the display device can be reduced. The region of the pixel portion 170101 can be enlarged. However, the signal line side input terminal 170104 is not limited to this, and may be formed on both sides of the substrate 170100 in the column direction. In this case, the pixels 170102 can be arranged with high density. The signal is input from the external drive circuit to the signal line side input terminal 1.
It is input to the scanning line via 70104.

The pixel 170102 includes a switching element and a pixel electrode. In each pixel 170102, the first terminal of the switching element is connected to the signal line, and the second terminal of the switching element is connected to the pixel electrode. The on / off of the switching element is controlled by the scanning line. However, the present invention is not limited to this, and various configurations can be used.
For example, the pixel 170102 may include a capacitor. In this case, the capacitor line is connected to the substrate 1
It is desirable to form on 70100. As another example, the pixel 170102 may include a current source such as a driving transistor. In this case, it is desirable to form the power supply line on the substrate 170100.

Note that as the substrate 170100, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk,
Cotton, hemp), synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates,
A stainless steel substrate, a substrate having stainless steel, foil, or the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. However, the present invention is not limited to this, and various things can be used.

Note that as a switching element included in the pixel 170102, a transistor (eg, a bipolar transistor or a MOS transistor), a diode (eg, a PN diode, a PIN diode, a Schottky diode, or an MIM (Metal Insulato) is used.
r Metal diode, MIS (Metal Insulator Semico)
ND), a diode-connected transistor, or the like), a thyristor, or the like can be used. However, the present invention is not limited to this, and various things can be used. Note that in the case where a MOS transistor is used as a switching element included in the pixel 170102, the gate electrode is connected to the scan line, the first terminal is connected to the signal line, and the second terminal is connected to the pixel electrode.

So far, the case where the signal is input by the external drive circuit has been described. However, the present invention is not limited to this, and an IC chip can be mounted on a display device.

For example, as illustrated in FIG. 62A, the IC chip 170201 can be mounted on the substrate 170100 by a COG (Chip on Glass) method. In this case, I
Since the C chip 170201 can be inspected before being mounted on the substrate 170100, the yield of the display device can be improved. Reliability can be increased. Note that portions common to the structure in FIG. 61A are denoted by common reference numerals, and description thereof is omitted.

As another example, as shown in FIG. 62B, TAB (Tape Automated B
IC chip 170201 is mounted by FPC (Flexible P)
printed circuit) 170200. In this case, IC
Since the chip 170201 can be inspected before being mounted on the FPC 170200, the yield of the display device can be improved. Reliability can be increased. Note that portions common to the structure in FIG. 61A are denoted by common reference numerals, and description thereof is omitted.

Here, not only the IC chip is mounted on the substrate 170100 but also the drive circuit is mounted on the substrate 1701.
00 can be formed.

For example, the scan line driver circuit 170105 can be formed over the substrate 170100 as shown in FIG. In this case, the cost can be reduced by reducing the number of parts. Reliability can be improved by reducing the number of connection points with circuit components. Since the scan line driver circuit 170105 has a low driving frequency, the scan line driver circuit 170105 can be easily formed using amorphous silicon or microcrystalline silicon as a semiconductor layer of the transistor. Note that an IC chip for outputting a signal to the signal line may be mounted on the substrate 170100 by a COG method. Alternatively, an FPC on which an IC chip for outputting a signal to a signal line is mounted by a TAB method may be provided on the substrate 170100. Note that the scan line driver circuit 170105
An IC chip for controlling the above may be mounted on the substrate 170100 by a COG method. Alternatively, an F chip in which an IC chip for controlling the scanning line driving circuit 170105 is mounted by a TAB method.
A PC may be placed on the substrate 170100. Note that portions common to the structure in FIG. 61A are denoted by common reference numerals, and description thereof is omitted.

As another example, the scan line driver circuit 170105 and the signal line driver circuit 170106 can be formed over a substrate 170100 as shown in FIG. For this reason, the cost can be reduced by reducing the number of parts. Reliability can be improved by reducing the number of connection points with circuit components. Note that an IC chip for controlling the scan line driver circuit 170105 may be mounted on the substrate 170100 by a COG method. Alternatively, the scanning line driving circuit 17
An FPC on which an IC chip for controlling 0105 is mounted by a TAB method is used as a substrate 170100.
You may arrange in. An IC chip for controlling the signal line driver circuit 170106 is formed on the substrate 17.
0100 may be mounted by the COG method. Alternatively, an FPC on which an IC chip for controlling the signal line driver circuit 170106 is mounted by a TAB method may be provided over the substrate 170100. Note that portions common to the structure in FIG. 61A are denoted by common reference numerals, and description thereof is omitted.

Next, a configuration of another display device will be described with reference to FIG. Specifically, a display device having a TFT substrate, a counter substrate, and a display layer sandwiched between the TFT substrate and the counter substrate will be described. FIG. 63 is a top view of the display device.

A pixel portion 170301, a scan line driver circuit 170302a, a scan line driver circuit 170302b, and a signal line driver circuit 170303 are formed over the substrate 170300. The pixel portion 170301, the scan line driver circuit 170302a, and the scan line driver circuit 170302 are included.
b and the signal line driver circuit 170303 are formed of a substrate 170300 by a sealant 170321.
And the substrate 170310 are sealed.

Further, an FPC 107320 is provided on the substrate 170300. The IC chip 107321 is mounted on the FPC 170320 by the TAB method.

A plurality of pixels are arranged in a matrix in the pixel portion 170301. A scan line extends from the scan line driver circuit 170302a in the row direction and is formed over the substrate 170300. A scan line extends from the scan line driver circuit 170302b in the row direction and is formed over the substrate 170300. The signal line extends from the signal line driver circuit 170303 in the column direction, and the substrate 17
0300.

A scan line driver circuit 170302a is formed on one side of the substrate 170300 in the row direction, and a scan line driver circuit 170302b is formed on the other side of the substrate 170300 in the row direction. The scanning lines extending from the scanning line driving circuit 170302a and the scanning lines extending from the scanning line driving circuit 170302b are alternately formed. Therefore, a high-definition display device can be obtained. Note that the invention is not limited thereto, and only one of the scan line driver circuit 170302a and the scan line driver circuit 170302b may be formed over the substrate 170300. In this case, the frame of the display device can be reduced. The region of the pixel portion 170301 can be enlarged. As another example, a scan line extending from the scan line driver circuit 170302a and a scan line extending from the scan line driver circuit 170302b may be common. In this case, it is suitable for a display device having a large scanning line load, such as a large display device.

The signal line driver circuit 170303 is formed on one side of the substrate 170300 in the column direction. For this reason, the frame of a display apparatus can be made small. The region of the pixel portion 170301 can be enlarged. However, the signal line driver circuit 170303 is not limited to this, and the substrate 17
0300 may be formed on both sides in the column direction. In this case, a high-definition display device can be obtained.

Note that as the substrate 170300, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk,
Cotton, hemp), synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates,
A stainless steel substrate, a substrate having stainless steel, foil, or the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. However, the present invention is not limited to this, and various things can be used.

Note that as a switching element included in the display device, a transistor (for example, a bipolar transistor or a MOS transistor), a diode (for example, a PN diode, PIN)
Diode, Schottky diode, MIM (Metal Insulator Me
tal) diode, MIS (Metal Insulator Semiconductor)
tor) diodes, diode-connected transistors, etc.), thyristors, etc. can be used. However, the present invention is not limited to this, and various things can be used.

So far, the case where the driving circuit is formed over the same substrate as the pixel portion has been described. However, the present invention is not limited to this, and another substrate on which part or all of the driver circuit is formed may be mounted as an IC chip on the substrate on which the pixel portion is formed.

For example, as shown in FIG. 64A, an IC chip 170401 instead of the signal line driver circuit.
Can be mounted on the substrate 170300 by a COG method. In this case, an increase in power consumption can be prevented by mounting the IC chip 170401 on the substrate 170300 by a COG method instead of the signal line driver circuit. This is because the signal line driving circuit has a high driving frequency and thus consumes a large amount of power. Since the IC chip 170401 can be inspected before being mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be increased. Since the scan line driver circuit 170302a and the scan line driver circuit 170302b have low driving frequencies, the scan line driver circuit 170302a and the scan line driver circuit 170302b can be easily formed using amorphous silicon or microcrystalline silicon as a semiconductor layer of a transistor. Can do. Thus, a display device can be manufactured using a large substrate. Note that portions common to the configuration in FIG. 63 are denoted by common reference numerals, and description thereof is omitted.

As another example, as shown in FIG. 64B, an IC chip 170 is used instead of the signal line driver circuit.
401 is mounted on the substrate 170300 by a COG method, an IC chip 170501a is mounted on the substrate 170300 by a COG method instead of the scanning line driver circuit 170302a, and an IC chip 170501b is mounted on the substrate 170300 by a COG method instead of the scanning line driver circuit 170302b. May be implemented. In this case, since the IC chip 170401, the IC chip 170501a, and the IC chip 170501b can be inspected before being mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be increased. Substrate 170300
Amorphous silicon or microcrystalline silicon can be easily used as a semiconductor layer of the transistor formed in the above. Thus, a display device can be manufactured using a large substrate. Note that portions common to the configuration in FIG. 63 are denoted by common reference numerals, and description thereof is omitted.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (or part of the contents) described in each drawing of this embodiment can be applied, combined, or replaced with the contents (or part of the contents) described in the drawings of another embodiment. Etc. can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 5)
In this embodiment, the operation of the display device will be described.

FIG. 65 is a diagram illustrating a configuration example of a display device.

The display device 180100 includes a pixel portion 180101, a signal line driver circuit 180103, and a scan line driver circuit 180104. In the pixel portion 180101, a plurality of signal lines S1 to Sm are arranged to extend from the signal line driver circuit 180103 in the column direction. Pixel portion 180101
A plurality of scanning lines G 1 to Gn are arranged extending in the row direction from the scanning line driving circuit 180104. The pixels 180102 are arranged in a matrix where the plurality of signal lines S1 to Sm and the plurality of scanning lines G1 to Gn intersect each other.

Note that the signal line driver circuit 180103 has a function of outputting a signal to each of the signal lines S1 to Sn. This signal may be called a video signal. Note that the scan line driver circuit 180104
Has a function of outputting a signal to each of the scanning lines G1 to Gm. This signal may be called a scanning signal.

Note that the pixel 180102 includes at least a switching element connected to the signal line. This switching element is controlled to be turned on and off by the potential of the scanning line (scanning signal). The pixel 180102 is selected when the switching element is on, and the pixel 180102 is not selected when the switching element is off.

When the pixel 180102 is selected (selected state), a video signal is input from the signal line to the pixel 180102. Then, the state of the pixel 180102 (eg, luminance, transmittance, storage capacitor voltage, etc.) changes in accordance with the input video signal.

When the pixel 180102 is not selected (non-selected state), the video signal is the pixel 1801.
02 is not entered. However, since the pixel 180102 holds a potential corresponding to the video signal input at the time of selection, the pixel 180102 maintains the voltage (for example, luminance, transmittance, storage capacitor voltage, etc.) corresponding to the video signal.

Note that the structure of the display device is not limited to FIG. For example, a wiring (a scanning line, a signal line, a power supply line, a capacitor line, a common line, or the like) may be newly added depending on the structure of the pixel 180102. As another example, a circuit having various functions may be added.

FIG. 66 shows an example of a timing chart for explaining the operation of the display device.

The timing chart of FIG. 66 shows one frame period corresponding to a period for displaying an image for one screen. The period of one frame is not particularly limited, but is preferably at least 1/60 second or less so that a person viewing the image does not feel flicker.

The timing chart in FIG. 66 shows the first scanning line G1, the i-th scanning line Gi (scanning line G1).
1 to Gm), i + 1-th scanning line Gi + 1 and m-th scanning line Gm are respectively selected.

Note that at the same time as the scanning line is selected, the pixel 180102 connected to the scanning line is also selected. For example, when the i-th scanning line Gi is selected, the pixel 180102 connected to the i-th scanning line Gi is also selected.

Each of the scanning lines G1 to Gm is sequentially selected from the first scanning line G1 to the m-th scanning line Gm (hereinafter also referred to as scanning). For example, during the period when the i-th scanning line Gi is selected, scanning lines other than the i-th scanning line Gi (G1 to Gi-1, Gi + 1 to Gm).
) Is not selected. In the next period, the (i + 1) th scanning line Gi + 1 is selected. Note that a period during which one scanning line is selected is referred to as one gate selection period.

Therefore, when a scanning line in a certain row is selected, a plurality of pixels 180 connected to the scanning line.
A video signal is input to the signal line 102 from each of the signal lines G1 to Gm. For example, i
While the scanning line Gi of the row is selected, the plurality of pixels 180102 connected to the scanning line Gi of the i-th row input arbitrary video signals from the signal lines S1 to Sn, respectively.
Thus, each of the plurality of pixels 180102 can be controlled independently by the scanning signal and the video signal.

Next, a case where one gate selection period is divided into a plurality of subgate selection periods will be described.
FIG. 67 shows a timing chart when one gate selection period is divided into two sub-gate selection periods (a first sub-gate selection period and a second sub-gate selection period).

Note that one gate selection period can be divided into three or more sub-gate selection periods.

The timing chart of FIG. 67 shows one frame period corresponding to a period for displaying an image for one screen. The period of one frame is not particularly limited, but is preferably at least 1/60 second or less so that a person viewing the image does not feel flicker.

One frame has two subframes (first subframe and second subframe).
It is divided into

The timing chart of FIG. 67 shows the i-th scanning line Gi, the i + 1-th scanning line Gi + 1, j
This shows the timing at which the scanning line Gj in the row (any one of the scanning lines Gi + 1 to Gm), the scanning line in the j + 1th row, and the scanning line Gj + 1 in the Gj + 1th row are selected.

Note that at the same time as the scanning line is selected, the pixel 180102 connected to the scanning line is also selected. For example, when the i-th scanning line Gi is selected, the pixel 180102 connected to the i-th scanning line Gi is also selected.

Note that each of the scanning lines G1 to Gm is sequentially scanned within each sub-gate selection period. For example, in a certain gate selection period, the i-th scanning line Gi is selected in the first sub-gate selection period, and the j-th scanning line Gj is selected in the second sub-gate selection period.
Then, in one gate selection period, it is possible to operate as if scanning signals for two rows were selected at the same time. At this time, different video signals are input to the signal lines S1 to Sn in the first sub-gate selection period and the second sub-gate selection period. Therefore,
A plurality of pixels 180102 connected to the i-th row and a plurality of pixels 1 connected to the j-th row
Separate video signals can be input to the 80102.

Next, a driving method for converting the frame rate of input image data (also referred to as input frame rate) and the display frame rate (also referred to as display frame rate) will be described. The frame rate is the number of frames per second, and the unit is Hz.

In the present embodiment, the input frame rate does not necessarily match the display frame rate. When the input frame rate and the display frame rate are different, the frame rate can be converted by a circuit (frame rate conversion circuit) that converts the frame rate of the image data. Thus, even when the input frame rate and the display frame rate are different, display can be performed at various display frame rates.

When the input frame rate is higher than the display frame rate, display can be performed by converting a part of the input image data into various display frame rates by discarding part of the input image data.
In this case, since the display frame rate can be reduced, the operating frequency of the drive circuit for display can be reduced, and power consumption can be reduced. On the other hand, when the input frame rate is smaller than the display frame rate, all or part of the input image data is displayed a plurality of times. Another image is generated from the input image data. What is input image data? By using means such as generating an irrelevant image, it is possible to perform display by converting to various display frame rates. In this case, the quality of the moving image can be improved by increasing the display frame rate.

In the present embodiment, a frame rate conversion method when the input frame rate is smaller than the display frame rate will be described in detail. Note that the frame rate conversion method when the input frame rate is larger than the display frame rate can be realized by executing the reverse procedure of the frame rate conversion method when the input frame rate is smaller than the display frame rate. it can.

In the present embodiment, an image displayed at the same frame rate as the input frame rate is referred to as a basic image. On the other hand, an image that is displayed at a frame rate different from the basic image and that is displayed in order to match the input frame rate and the display frame rate is referred to as an interpolated image. As the basic image, the same image as the input image data can be used. The same image as the basic image can be used as the interpolation image. Furthermore, an image different from the basic image can be created, and the created image can be used as an interpolation image.

When creating an interpolated image, a method of detecting temporal changes (image motion) of the input image data and using these intermediate images as an interpolated image, an image multiplied by a coefficient in the luminance of the basic image A plurality of different images from the input image data, and presenting the plurality of images sequentially in time (one of the plurality of images as a basic image,
There is a method of causing the observer to perceive that an image corresponding to the input image data is displayed by using the rest as an interpolation image. As a method of creating a plurality of different images from input image data, there are a method of converting a gamma value of the input image data, a method of dividing a gradation value included in the input image data, and the like.

The intermediate state image (intermediate image) is an image obtained by detecting temporal changes (image motion) of input image data and interpolating the detected motion. Obtaining an intermediate image by such a method is referred to as motion compensation.

Next, a specific example of the frame rate conversion method will be described. According to this method, an arbitrary rational number (n / m) times frame rate conversion can be realized. Here, n and m are integers of 1 or more. The frame rate conversion method in the present embodiment can be handled by dividing it into a first step and a second step. Here, the first step is a step of converting the frame rate to an arbitrary rational number (n / m) times. Here, a basic image may be used as the interpolation image, or an intermediate image obtained by motion compensation may be used as the interpolation image. In the second step, a plurality of different images (sub-images) are created from the input image data or each of the images subjected to frame rate conversion in the first step, and the plurality of sub-images are temporally continuous. It is a step for performing the method of displaying. By using the method according to the second step, even though a plurality of different images are actually displayed, it is possible to make the human eye perceive as if the original image was displayed.

The frame rate conversion method in the present embodiment may use both the first step and the second step, omit the first step, and use only the second step. Step 2 may be omitted and only the first step may be used.

First, as a first step, an arbitrary rational number (n / m) times frame rate conversion will be described. (See FIG. 68) In FIG. 68, the horizontal axis represents time, and the vertical axis represents various cases of n and m. The figure in FIG. 68 represents the schematic diagram of the image displayed, and represents the timing displayed by the horizontal position. Furthermore, it is assumed that the movement of the image is schematically represented by the points displayed in the figure. However, this is an example for explanation, and the displayed image is not limited to this. This method can be applied to various images.

The period Tin represents the cycle of the input image data. The period of the input image data corresponds to the input frame rate. For example, when the input frame rate is 60 Hz, the cycle of the input image data is 1/60 seconds. Similarly, if the input frame rate is 50 Hz,
The cycle of the input image data is 1/50 second. Thus, the period of the input image data (unit:
Second) is the reciprocal of the input frame rate (unit: Hz). Various input frame rates can be used. For example, 24 Hz, 50 Hz, 60 Hz, 70 Hz,
48 Hz, 100 Hz, 120 Hz, 140 Hz, etc. can be mentioned. Where 2
4 Hz is a frame rate used for film movies and the like. 50 Hz is a frame rate used for PAL standard video signals and the like. 60 Hz is a frame rate used for NTSC video signals. 70 Hz is a frame rate used for a display input signal of a personal computer. 48Hz, 100Hz, 120Hz,
140 Hz is twice the frame rate. Note that the frame rate is not limited to double and may be various multiples. Thus, according to the method shown in this embodiment, frame rate conversion can be realized for input signals of various standards.

The procedure for frame rate conversion of an arbitrary rational number (n / m) times in the first step is as follows.
As procedure 1, the k-th interpolation image for the first basic image (k is an integer equal to or greater than 1; the initial value is 1
) Display timing is determined. The display timing of the k-th interpolation image is assumed to be the time when a period obtained by multiplying the cycle of the input image data by k (m / n) has elapsed since the first basic image was displayed.
As a procedure 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the k-th interpolation image is an integer. If it is an integer, the (k (m / n) +1) th basic image is displayed at the display timing of the kth interpolation image, and the first step ends. If it is not an integer, go to step 3.
As a procedure 3, an image used as the kth interpolation image is determined. Specifically, the coefficient k (m / n) used for determining the display timing of the k-th interpolation image is converted into the form of x + y / n. Here, x and y are integers, and y is a number smaller than n. When the k-th interpolation image is an intermediate image obtained by motion compensation, the k-th interpolation image is (x + 1).
) To the (x + 2) th basic image, an intermediate image obtained as an image corresponding to a motion obtained by multiplying the movement of the image by (y / n). When the kth interpolation image is the same as the basic image, the (x + 1) th basic image can be used. A method for obtaining an intermediate image as an image corresponding to a motion obtained by multiplying the motion of the image by (y / n) will be described in detail in another part.
In step 4, the target interpolation image is moved to the next interpolation image. Specifically, the value of k is incremented by 1, and the procedure returns to procedure 1.

Next, in the procedure in the first step, the values of n and m are specifically shown and described in detail.

Note that the mechanism for executing the procedure in the first step may be implemented in the apparatus, or may be determined in advance at the design stage of the apparatus. If the mechanism for executing the procedure in the first step is mounted on the apparatus, the driving method can be switched so that the optimum operation according to the situation is performed. The situation here refers to the contents of the image data, the environment inside and outside the device (temperature, humidity, atmospheric pressure, light, sound, magnetic field, electric field, radiation dose,
Altitude, acceleration, moving speed, etc.), user settings, software version, etc. On the other hand, if the mechanism for executing the procedure in the first step is determined in advance at the device design stage, an optimal driving circuit can be used for each driving method, and the mechanism is determined. As a result, a reduction in manufacturing cost due to mass production effects can be expected.

When n = 1, m = 1, that is, the conversion ratio (n / m) is 1 (where n = 1 and m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolation image with respect to the first basic image is determined. The display timing of the first interpolated image is the period of the input image data after the first basic image is displayed.
/ N) It is the time when a period of 1 time, that is, 1 time has passed.

Next, in procedure 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolation image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Accordingly, at the display timing of the first interpolation image, the (k (m / n) +1), that is, the second basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 1, the k-th image is a basic image, the (k + 1) -th image is a basic image, and the image display cycle is one time the cycle of input image data. To do.

As a specific expression, when the conversion ratio is 1 (n / m = 1),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
A display device driving method for sequentially displaying (k + 1) th images at intervals equal to the period of input image data,
The k-th image is displayed according to the i-th image data;
The (k + 1) th image is displayed according to the (i + 1) th image data.

Here, when the conversion ratio is 1, since the frame rate conversion circuit can be omitted, there is an advantage that the manufacturing cost can be reduced. Furthermore, when the conversion ratio is 1, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 1. Furthermore, when the conversion ratio is 1, there is an advantage that power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 1.

When n = 2 and m = 1, that is, when the conversion ratio (n / m) is 2 (location where n = 2 and m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolation image with respect to the first basic image is determined. The display timing of the first interpolated image is the period of the input image data after the first basic image is displayed.
/ N) This is the time when a period that is doubled, that is, halved has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolation image is an integer. Here, since the coefficient k (m / n) is 1/2, it is not an integer. Therefore, go to step 3.

In procedure 3, an image to be used as the first interpolation image is determined. Therefore, the factor 1/2 is set to x
Convert to + y / n form. In the case of the coefficient 1/2, x = 0 and y = 1. When the first interpolation image is an intermediate image obtained by motion compensation, the first interpolation image is the (x +
1) That is, an intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x + 2) or second basic image by y / n times, that is, ½ times. First
When the interpolated image is the same as the basic image, the (x + 1) th, that is, the first basic image can be used.

By the procedure so far, the display timing of the first interpolation image and the image to be displayed as the first interpolation image can be determined. Next, in procedure 4, the target interpolation image is moved from the first interpolation image to the second interpolation image. That is, k is changed from 1 to 2, and the procedure returns to step 1.

When k = 2, in step 1, the display timing of the second interpolation image with respect to the first basic image is determined. The display timing of the second interpolated image is a point in time when the period of the input image data is multiplied by k (m / n), that is, 1 time has elapsed since the first basic image was displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the second interpolation image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the second interpolation image, the (k (m / n) +1), that is, the second basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 2 (n / m = 2),
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is a basic image, and the image display cycle is ½ times the cycle of the input image data.

As a specific expression, when the conversion ratio is 2 (n / m = 2),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
A display device driving method for sequentially displaying k + 2 images at intervals of 1/2 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by halving the movement from the i-th image data to the (i + 1) -th image data,
The k + 2th image is displayed according to the i + 1th image data.

As another specific expression, when the conversion ratio is 2 (n / m = 2),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
A display device driving method for sequentially displaying k + 2 images at intervals of 1/2 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2th image is displayed according to the i + 1th image data.

Specifically, when the conversion ratio is 2, it is also called double speed drive or simply double speed drive.
For example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (
120 Hz drive). Then, the image is continuously displayed twice for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display device is an active matrix liquid crystal display device,
It brings about a particularly remarkable image quality improvement effect. This is related to the problem of insufficient writing voltage due to so-called dynamic capacitance, in which the capacitance of the liquid crystal element varies depending on the applied voltage. That is, by making the display frame rate larger than the input frame rate, it is possible to increase the frequency of the image data write operation, thereby reducing obstacles such as moving image tailing and afterimage caused by insufficient write voltage due to dynamic capacitance. be able to. Further, it is effective to combine the AC drive and 120 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 120 Hz and setting the AC drive frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), It can be reduced to a level not perceived by human eyes.

When n = 3, m = 1, that is, the conversion ratio (n / m) is 3 (n = 3, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolation image with respect to the first basic image is determined. The display timing of the first interpolated image is the period of the input image data after the first basic image is displayed.
/ N) is the time when a period of 1/3 times has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolation image is an integer. Here, since the coefficient k (m / n) is 1/3, it is not an integer. Therefore, go to step 3.

In procedure 3, an image to be used as the first interpolation image is determined. Therefore, the coefficient 1/3 is set to x
Convert to + y / n form. In the case of the coefficient 1/3, x = 0 and y = 1. When the first interpolation image is an intermediate image obtained by motion compensation, the first interpolation image is the (x +
1) That is, an intermediate image obtained as an image corresponding to a movement obtained by multiplying the movement of the image from the first basic image to the (x + 2) th or second basic image by y / n times, that is, 1/3 times. First
When the interpolated image is the same as the basic image, the (x + 1) th, that is, the first basic image can be used.

By the procedure so far, the display timing of the first interpolation image and the image to be displayed as the first interpolation image can be determined. Next, in procedure 4, the target interpolation image is moved from the first interpolation image to the second interpolation image. That is, k is changed from 1 to 2, and the procedure returns to step 1.

When k = 2, in step 1, the display timing of the second interpolation image with respect to the first basic image is determined. The display timing of the second interpolated image is a point in time when a period in which the cycle of the input image data is k (m / n) times, that is, 2/3 times has elapsed since the first basic image is displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the second interpolation image is an integer. Here, since the coefficient k (m / n) is 2/3, it is not an integer. Therefore, go to step 3.

In procedure 3, an image to be used as the second interpolation image is determined. Therefore, the coefficient 2/3 is set to x
Convert to + y / n form. In the case of the coefficient 2/3, x = 0 and y = 2. When the second interpolation image is an intermediate image obtained by motion compensation, the second interpolation image is the (x +
1) That is, an intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x + 2) th or second basic image by y / n times, that is, 2/3 times, is used. Second
When the interpolated image is the same as the basic image, the (x + 1) th, that is, the first basic image can be used.

By the procedure so far, the display timing of the second interpolation image and the image to be displayed as the second interpolation image can be determined. Next, in procedure 4, the target interpolation image is moved from the second interpolation image to the third interpolation image. That is, k is changed from 2 to 3, and the procedure returns to step 1.

When k = 3, in step 1, the display timing of the third interpolation image with respect to the first basic image is determined. The display timing of the third interpolated image is the time when the period of the input image data cycle k (m / n) times, that is, 1 time has elapsed since the display of the first basic image.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the third interpolation image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the third interpolation image, the (k (m / n) +1), that is, the second basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 3 (n / m = 3),
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is an interpolation image,
The k + 3 image is a basic image, and the image display cycle is 1/3 times the cycle of the input image data.

As a specific expression, when the conversion ratio is 3 (n / m = 3),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
A display device driving method for sequentially displaying k + 3 images at intervals of 1/3 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1-th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1-th image data by 1/3,
The k + 2 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image to the i + 1-th image by 2/3,
The k + 3 image is displayed according to the (i + 1) th image data.

As another specific expression, when the conversion ratio is 3 (n / m = 3),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
A display device driving method for sequentially displaying k + 3 images at intervals of 1/3 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2 image is displayed according to the i-th image data,
The k + 3 image is displayed according to the (i + 1) th image data.

Here, when the conversion ratio is 3, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3. Furthermore, when the conversion ratio is 3, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 3.

Specifically, when the conversion ratio is 3, it is also called triple speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, for one input image, the image is continuously displayed three times. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, the AC drive of the liquid crystal display device and 180 Hz
It is also effective to combine driving. That is, the driving frequency of the liquid crystal display device is set to 180H.
z, and the frequency of AC driving is an integral multiple or a fraction thereof (for example, 45 Hz, 9
By setting the frequency to 0 Hz, 180 Hz, 360 Hz, etc., flicker that appears due to AC driving can be reduced to a level that is not perceived by human eyes.

n = 3, m = 2, that is, the conversion ratio (n / m) is 3/2 (where n = 3 and m = 2 in FIG. 68).
In this case, the operation in the first step is as follows. First, when k = 1, procedure 1
Then, the display timing of the 1st interpolation image with respect to a 1st basic image is determined. The display timing of the first interpolation image is the period of the input image data after the first basic image is displayed.
This is the time when (m / n) times, ie, 2/3 times, has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolation image is an integer. Here, since the coefficient k (m / n) is 2/3, it is not an integer. Therefore, go to step 3.

In procedure 3, an image to be used as the first interpolation image is determined. Therefore, the coefficient 2/3 is set to x
Convert to + y / n form. In the case of the coefficient 2/3, x = 0 and y = 2. When the first interpolation image is an intermediate image obtained by motion compensation, the first interpolation image is the (x +
1) That is, an intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x + 2) th or second basic image by y / n times, that is, 2/3 times, is used. First
When the interpolated image is the same as the basic image, the (x + 1) th, that is, the first basic image can be used.

By the procedure so far, the display timing of the first interpolation image and the image to be displayed as the first interpolation image can be determined. Next, in procedure 4, the target interpolation image is moved from the first interpolation image to the second interpolation image. That is, k is changed from 1 to 2, and the procedure returns to step 1.

When k = 2, in step 1, the display timing of the second interpolation image with respect to the first basic image is determined. The display timing of the second interpolated image is a point in time when a period in which the period of the input image data is k (m / n) times, that is, 4/3 times has elapsed since the first basic image is displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the second interpolation image is an integer. Here, since the coefficient k (m / n) is 4/3, it is not an integer. Therefore, go to step 3.

In procedure 3, an image to be used as the second interpolation image is determined. Therefore, the coefficient 4/3 is set to x
Convert to + y / n form. In the case of the coefficient 4/3, x = 1 and y = 1. When the second interpolation image is an intermediate image obtained by motion compensation, the second interpolation image is the (x +
1) An intermediate image obtained as an image corresponding to a movement obtained by multiplying the movement of an image from the second basic image to the (x + 2) or third basic image by y / n times, that is, 1/3 times. Second
When the interpolated image is the same as the basic image, the (x + 1) th, that is, the second basic image can be used.

By the procedure so far, the display timing of the second interpolation image and the image to be displayed as the second interpolation image can be determined. Next, in procedure 4, the target interpolation image is moved from the second interpolation image to the third interpolation image. That is, k is changed from 2 to 3, and the procedure returns to step 1.

When k = 3, in step 1, the display timing of the third interpolation image with respect to the first basic image is determined. The display timing of the third interpolated image is a point in time when the period of the input image data period is multiplied by k (m / n), that is, doubled after the first basic image is displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the third interpolation image is an integer. Here, since the coefficient k (m / n) is 2, it is an integer. Therefore, at the display timing of the third interpolation image, the (k (m / n) +1), that is, the third basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 3/2 (n / m = 3/2),
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is an interpolation image,
The k + 3 image is a basic image, and the image display cycle is 2/3 times the cycle of the input image data.

As a specific expression, when the conversion ratio is 3/2 (n / m = 3/2),
I-th image data (i is a positive integer);
The (i + 1) th image data;
I + 2th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
A display device driving method for sequentially displaying k + 3 images at intervals of 2/3 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i + 1-th image data by 2/3,
The k + 2 image has a movement of ｉ from the (i + 1) th image to the (i + 2) th image by 1/3.
Displayed according to the image data corresponding to the doubled movement,
The k + 3 image is displayed according to the i + 2 image data.

As another specific expression, when the conversion ratio is 3/2 (n / m = 3/2),
I-th image data (i is a positive integer);
The (i + 1) th image data;
I + 2th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
A display device driving method for sequentially displaying k + 3 images at intervals of 2/3 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2 image is displayed according to the (i + 1) th image data,
The k + 3 image is displayed according to the i + 2 image data.

Here, when the conversion ratio is 3/2, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3/2. Further, when the conversion ratio is 3/2, the conversion ratio is 3 /
There is an advantage that power consumption and manufacturing cost can be reduced as compared with the case of larger than 2.

Specifically, when the conversion ratio is 3/2, it is also called 3/2 speed drive or 1.5 times speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 90
Hz (90 Hz drive). Then, for two input images, the images are continuously displayed three times. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to driving methods with a large driving frequency such as 120 Hz driving (double speed driving) and 180 Hz driving (triple speed driving), the operation frequency of the circuit for obtaining an intermediate image can be reduced by motion compensation, so that an inexpensive circuit can be used. Manufacturing cost and power consumption can be reduced. Furthermore, if the display device is an active matrix liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so
It brings about a particularly remarkable image quality improvement effect against obstacles such as afterimages. Furthermore, it is also effective to combine AC driving and 90 Hz driving of the liquid crystal display device. That is, while the drive frequency of the liquid crystal display device is 90 Hz, the frequency of AC drive is an integer multiple or a fraction thereof (for example, 3
By setting the frequency to 0 Hz, 45 Hz, 90 Hz, 180 Hz, etc., flicker that appears due to AC driving can be reduced to a level that is not perceived by human eyes.

Although the details of the procedure for positive integers n and m other than the above are omitted, the conversion ratio can be set as an arbitrary rational number (n / m) by following the frame rate conversion procedure in the first step. it can. Of the combinations of positive integers n and m, the conversion ratio (n /
Combinations that can be reduced by m) can be handled in the same manner as the conversion ratio after reduction.

For example, when n = 4, m = 1, that is, when the conversion ratio (n / m) is 4 (location where n = 4, m = 1 in FIG. 68),
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is an interpolation image,
The k + 3 image is an interpolation image,
The k + 4th image is a basic image, and the image display cycle is ¼ times the cycle of the input image data.

More specifically, when the conversion ratio is 4 (n / m = 4),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
A display device driving method for sequentially displaying k + 4 images at intervals of 1/4 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1-th image is displayed according to image data corresponding to a movement obtained by multiplying a movement from the i-th image data to the i + 1-th image data by ¼,
The k + 2 image is displayed in accordance with image data corresponding to a movement that is ½ times the movement from the i-th image data to the i + 1-th image data,
The k + 3 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1-th image data by 3/4,
The k + 4th image is displayed according to the i + 1th image data.

As another specific expression, when the conversion ratio is 4 (n / m = 4),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
A display device driving method for sequentially displaying k + 4 images at intervals of 1/4 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2 image is displayed according to the i-th image data,
The k + 3 image is displayed according to the i th image data,
The k + 4th image is displayed according to the i + 1th image data.

Here, when the conversion ratio is 4, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4. Further, when the conversion ratio is 4, there is an advantage that power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 4.

Specifically, when the conversion ratio is 4, it is also referred to as quadruple speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, four images are continuously displayed for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, 120
Compared to driving methods with a low driving frequency such as Hz driving (double speed driving) and 180 Hz driving (triple speed driving), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolation image. The movement can be smoothed, and the quality of the moving image can be remarkably improved. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Further, it is effective to combine the AC drive and 240 Hz drive of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 240 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 40 Hz, 60 Hz, 120 Hz, etc.), It can be reduced to a level not perceived by human eyes.

Further, for example, n = 4, m = 3, that is, the conversion ratio (n / m) is 4/3 (n = n in FIG. 68).
4, m = 3)
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is an interpolation image,
The k + 3 image is an interpolation image,
The k + 4th image is a basic image, and the image display cycle is 3/4 times the cycle of the input image data.

More specifically, when the conversion ratio is 4/3 (n / m = 4/3),
I-th image data (i is a positive integer);
The (i + 1) th image data;
I + 2th image data;
I + 3th image data are sequentially input as input image data at a constant cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
A display device driving method for sequentially displaying k + 4 images at intervals of 3/4 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1-th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1-th image data by 3/4,
The k + 2 image halves the movement from the i + 1th image to the i + 2 image.
Displayed according to the image data corresponding to the doubled movement,
The k + 3 image is a quarter of the movement from the i + 2 image to the i + 3 image.
Displayed according to the image data corresponding to the doubled movement,
The k + 4 image is displayed according to the i + 3 image data.

As another specific expression, when the conversion ratio is 4/3 (n / m = 4/3),
I-th image data (i is a positive integer);
The (i + 1) th image data;
I + 2th image data;
I + 3th image data are sequentially input as input image data at a constant cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
A display device driving method for sequentially displaying k + 4 images at intervals of 3/4 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2 image is displayed according to the (i + 1) th image data,
The k + 3 image is displayed according to the i + 2 image data,
The k + 4 image is displayed according to the i + 3 image data.

Here, when the conversion ratio is 4/3, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4/3. Further, when the conversion ratio is 4/3, the conversion ratio is 4 /
There is an advantage that power consumption and manufacturing cost can be reduced as compared with the case of larger than 3.

Specifically, when the conversion ratio is 4/3, it is also referred to as 4/3 times speed driving or 1.25 times speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 8
0 Hz (80 Hz drive). Then, four images are continuously displayed for three input images. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to driving methods with a large driving frequency such as 120 Hz driving (double speed driving) and 180 Hz driving (triple speed driving), the operation frequency of the circuit for obtaining an intermediate image can be reduced by motion compensation, so that an inexpensive circuit can be used. Manufacturing cost and power consumption can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Further, it is effective to combine the AC drive and 80 Hz drive of the liquid crystal display device. That is, while the driving frequency of the liquid crystal display device is 80 Hz, the frequency of AC driving is an integer multiple or a fraction thereof (for example,
By setting the frequency to 40 Hz, 80 Hz, 160 Hz, 240 Hz, etc., flicker that appears due to AC driving can be reduced to a level that is not perceived by human eyes.

Further, for example, n = 5, m = 1, that is, the conversion ratio (n / m) is 5 (n = 5 in FIG. 68).
in the case of m = 1)
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is an interpolation image,
The k + 3 image is an interpolation image,
The k + 4th image is an interpolation image,
The k + 5th image is a basic image, and the image display cycle is 1/5 times the cycle of the input image data.

More specifically, when the conversion ratio is 5 (n / m = 5),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
K + 4th image;
A display device driving method for sequentially displaying k + 5 images at intervals of 1/5 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to image data corresponding to a motion that is 1/5 times the motion from the i th image data to the i + 1 th image data,
The k + 2 image is displayed according to image data corresponding to a motion that is 2/5 times the motion from the i-th image data to the i + 1-th image data,
The k + 3 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1-th image data by 3/5,
The k + 4 image is displayed in accordance with image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i + 1-th image data by 4/5,
The k + 5th image is displayed according to the i + 1th image data.

As another specific expression, when the conversion ratio is 5 (n / m = 5),
I-th image data (i is a positive integer);
I + 1-th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
K + 4th image;
A display device driving method for sequentially displaying k + 5 images at intervals of 1/5 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2 image is displayed according to the i-th image data,
The k + 3 image is displayed according to the i th image data,
The k + 4 image is displayed according to the i-th image data,
The k + 5th image is displayed according to the i + 1th image data.

Here, when the conversion ratio is 5, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5. Furthermore, when the conversion ratio is 5, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5.

Specifically, when the conversion ratio is 5, it is also referred to as 5 × speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, the image is continuously displayed five times for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, 120
Compared to driving methods with a low driving frequency such as Hz driving (double speed driving) and 180 Hz driving (triple speed driving), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolation image. The movement can be smoothed, and the quality of the moving image can be remarkably improved. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, it is also effective to combine AC driving and 300 Hz driving of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 300 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.), It can be reduced to a level not perceived by human eyes.

Further, for example, n = 5, m = 2, that is, the conversion ratio (n / m) is 5/2 (n = n in FIG. 68).
5, where m = 2)
The kth image is a basic image,
The k + 1 th image is an interpolated image,
The k + 2 image is an interpolation image,
The k + 3 image is an interpolation image,
The k + 4th image is an interpolation image,
The k + 5th image is a basic image, and the image display cycle is 1/5 times the cycle of the input image data.

More specifically, when the conversion ratio is 5/2 (n / m = 5/2),
I-th image data (i is a positive integer);
The (i + 1) th image data;
I + 2th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
K + 4th image;
A display device driving method for sequentially displaying k + 5 images at intervals of 1/5 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to image data corresponding to a motion that is 2/5 times the motion from the i th image data to the i + 1 th image data,
The k + 2 image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i + 1-th image data by 4/5,
The k + 3 image is displayed according to image data corresponding to a movement that is 1/5 times the movement from the i + 1th image data to the i + 2 image data,
The k + 4 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i + 1th image data to the i + 2 image data by 3/5,
The k + 5 image is displayed according to the i + 2 image data.

As another specific expression, when the conversion ratio is 5/2 (n / m = 5/2),
I-th image data (i is a positive integer);
The (i + 1) th image data;
I + 2th image data is sequentially input as input image data in a certain cycle,
A k-th image (k is a positive integer);
The (k + 1) th image,
K + 2 image,
K + 3th image;
K + 4th image;
A display device driving method for sequentially displaying k + 5 images at intervals of 1/5 times the cycle of input image data,
The k-th image is displayed according to the i-th image data;
The k + 1 th image is displayed according to the i th image data,
The k + 2 image is displayed according to the i-th image data,
The k + 3th image is displayed according to the i + 1th image data,
The k + 4th image is displayed according to the (i + 1) th image data,
The k + 5 image is displayed according to the i + 2 image data.

Here, when the conversion ratio is 5/2, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/2. Further, when the conversion ratio is 5/2, there is an advantage that power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5.

Specifically, when the conversion ratio is 5, it is also called 5/2 speed driving or 2.5 times speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 150H.
z (150 Hz drive). Then, for two input images, the images are continuously displayed five times. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to a driving method with a low driving frequency such as 120 Hz driving (double speed driving), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolated image. It is possible to significantly improve the quality of moving images. Furthermore, compared with a driving method having a high driving frequency such as 180 Hz driving (three times speed driving), the operation frequency of a circuit for obtaining an intermediate image can be reduced by motion compensation, so that an inexpensive circuit can be used, and manufacturing cost and power consumption can be reduced. Can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, it is also effective to combine AC driving and 150 Hz driving of the liquid crystal display device. That is, the driving frequency of the liquid crystal display device is set to 150 Hz.
And the frequency of AC driving is an integral multiple or a fraction thereof (for example, 30 Hz, 50
Hz, 75 Hz, 150 Hz, etc.) can reduce flicker that appears due to AC driving to a level that is not perceived by human eyes.

Thus, the conversion ratio can be set as an arbitrary rational number (n / m) by variously setting the positive integers n and m. Detailed explanation is omitted, but in the range where n is 10 or less,
n = 1, m = 1, that is, conversion ratio (n / m) = 1 (1 × speed driving, 60 Hz),
n = 2, m = 1, that is, conversion ratio (n / m) = 2 (double speed drive, 120 Hz),
n = 3, m = 1, that is, conversion ratio (n / m) = 3 (triple speed drive, 180 Hz),
n = 3, m = 2, that is, conversion ratio (n / m) = 3/2 (3/2 double speed drive, 90 Hz),
n = 4, m = 1, that is, conversion ratio (n / m) = 4 (4 × speed driving, 240 Hz),
n = 4, m = 3, that is, conversion ratio (n / m) = 4/3 (4/3 double speed drive, 80 Hz),
n = 5, m = 1, that is, conversion ratio (n / m) = 5/1 (5 × speed driving, 300 Hz),
n = 5, m = 2, that is, conversion ratio (n / m) = 5/2 (5/2 double speed drive, 150 Hz),
n = 5, m = 3, that is, conversion ratio (n / m) = 5/3 (5/3 double speed drive, 100 Hz),
n = 5, m = 4, that is, conversion ratio (n / m) = 5/4 (5/4 double speed drive, 75 Hz),
n = 6, m = 1, that is, conversion ratio (n / m) = 6 (6 × speed driving, 360 Hz),
n = 6, m = 5, that is, conversion ratio (n / m) = 6/5 (6/5 double speed drive, 72 Hz),
n = 7, m = 1, that is, conversion ratio (n / m) = 7 (7 × speed drive, 420 Hz),
n = 7, m = 2, that is, conversion ratio (n / m) = 7/2 (7/2 double speed drive, 210 Hz),
n = 7, m = 3, that is, conversion ratio (n / m) = 7/3 (7/3 double speed drive, 140 Hz),
n = 7, m = 4, that is, conversion ratio (n / m) = 7/4 (7/4 double speed drive, 105 Hz),
n = 7, m = 5, that is, conversion ratio (n / m) = 7/5 (7/5 double speed drive, 84 Hz),
n = 7, m = 6, that is, conversion ratio (n / m) = 7/6 (7/6 double speed drive, 70 Hz),
n = 8, m = 1, that is, conversion ratio (n / m) = 8 (8 × speed drive, 480 Hz),
n = 8, m = 3, that is, conversion ratio (n / m) = 8/3 (8/3 double speed drive, 160 Hz),
n = 8, m = 5, that is, conversion ratio (n / m) = 8/5 (8/5 double speed drive, 96 Hz),
n = 8, m = 7, ie conversion ratio (n / m) = 8/7 (8/7 double speed drive, 68.6 Hz)
,
n = 9, m = 1, that is, conversion ratio (n / m) = 9 (9 × speed drive, 540 Hz),
n = 9, m = 2, that is, conversion ratio (n / m) = 9/2 (9/2 double speed drive, 270 Hz),
n = 9, m = 4, that is, conversion ratio (n / m) = 9/4 (9/4 double speed drive, 135 Hz),
n = 9, m = 5, that is, conversion ratio (n / m) = 9/5 (9/5 double speed drive, 108 Hz),
n = 9, m = 7, ie conversion ratio (n / m) = 9/7 (9/7 double speed drive, 77.1 Hz)
,
n = 9, m = 8, that is, conversion ratio (n / m) = 9/8 (9/8 double speed drive, 67.5 Hz)
,
n = 10, m = 1, that is, conversion ratio (n / m) = 10 (10 × speed driving, 600 Hz),
n = 10, m = 3, that is, conversion ratio (n / m) = 10/3 (10/3 double speed drive, 200H
z),
n = 10, m = 7, that is, conversion ratio (n / m) = 10/7 (10/7 double speed drive, 85.7)
Hz),
n = 10, m = 9, that is, conversion ratio (n / m) = 10/9 (10/9 double speed drive, 66.7)
Hz),
The above combinations are possible. The frequency notation is an example when the input frame rate is 60 Hz. For other input frame rates, the value obtained by integrating the respective conversion ratios with the input frame rate is the drive frequency.

In the case where n is an integer greater than 10, specific numbers of n and m are not mentioned, but the frame rate conversion procedure in the first step can be applied to various n and m. Is clear.

Note that the conversion ratio can be determined depending on how much of the displayed image includes an image that can be displayed without performing motion compensation in the input image data. Specifically, the smaller m is, the larger the ratio of images that can be displayed without performing motion compensation on the input image data. If the frequency of motion compensation is low, the frequency of operation of the circuit that performs motion compensation can be reduced, so that power consumption can be reduced. Furthermore, motion compensation can accurately reflect images that contain errors (image motion is accurately reflected). The possibility that an intermediate image) is not created can be reduced, and the image quality can be improved. As such a conversion ratio, in the range where n is 10 or less, for example, 1, 2, 3, 3/2, 4,
5,5 / 2,6,7,7 / 2,8,9,9 / 2,10. When such a conversion ratio is used, particularly when an intermediate image obtained by motion compensation is used as an interpolated image, the image quality can be increased and the power consumption can be reduced. This is because when m is 2, the number of images that can be displayed without performing motion compensation on the input image data is relatively large (there is only ½ of the total number of input image data). ,
This is because the frequency of performing motion compensation decreases. Furthermore, when m is 1, the number of images that can be displayed without performing motion compensation on the input image data is large (equal to the total number of input image data), and motion compensation is not performed. is there. On the other hand, as m is larger, an intermediate image created by highly accurate motion compensation can be used, so that there is an advantage that the motion of the image can be made smoother.

When the display device is a liquid crystal display device, the conversion ratio can be determined according to the response time of the liquid crystal element. Here, the response time of the liquid crystal element is the time from when the voltage applied to the liquid crystal element is changed until the liquid crystal element responds. In the case where the response time of the liquid crystal element varies depending on the amount of change in voltage applied to the liquid crystal element, the average value of response times in a plurality of typical voltage changes can be obtained. Alternatively, the response time of the liquid crystal element is MPRT (Movin
g Picture Response Time).
The conversion ratio can be determined by frame rate conversion so that the image display cycle is close to the response time of the liquid crystal element. Specifically, the response time of the liquid crystal element is preferably a time from a value obtained by integrating the cycle of the input image data and the reciprocal of the conversion ratio to a value about half of this value. By doing so, it is possible to obtain an image display cycle that matches the response time of the liquid crystal element, so that the image quality can be improved. For example, when the response time of the liquid crystal element is 4 milliseconds or more and 8 milliseconds or less, double speed driving (120 Hz driving) can be performed. This is because the image display cycle of 120 Hz drive is about 8 milliseconds, and half of the image display cycle of 120 Hz drive is about 4 milliseconds. Similarly, for example, in the case where the response time of the liquid crystal element is 3 milliseconds or more and 6 milliseconds or less, the triple-speed driving (180 Hz driving) can be performed, and the response time of the liquid crystal element is 5
In the case of milliseconds to 11 milliseconds, 1.5 times speed driving (90 Hz driving) can be performed, and in the case where the liquid crystal element response time is 2 milliseconds to 4 milliseconds, quadruple speed driving (240 Hz driving) When the response time of the liquid crystal element is 6 milliseconds or more and 12 milliseconds or less, 1
. 25-times speed driving (80 Hz driving) can be performed. The same applies to other drive frequencies.

Note that the conversion ratio can also be determined by the trade-off between the quality of moving images, power consumption, and manufacturing cost. That is, increasing the conversion ratio can improve the quality of the moving image, while reducing the conversion ratio can reduce power consumption and manufacturing cost. That is, each conversion ratio in the range where n is 10 or less has the following advantages.

When the conversion ratio is 1, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 1, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 1. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about one time the cycle of the input image data.

When the conversion ratio is 2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 2. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about ½ times the cycle of the input image data.

When the conversion ratio is 3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 3. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/3 times the cycle of the input image data.

When the conversion ratio is 3/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 3/2. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 2/3 times the cycle of the input image data.

When the conversion ratio is 4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 4. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/4 times the cycle of the input image data.

When the conversion ratio is 4/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 4/3. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/4 times the cycle of the input image data.

When the conversion ratio is 5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/5 times the cycle of the input image data.

When the conversion ratio is 5/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5/2. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 2/5 times the cycle of the input image data.

When the conversion ratio is 5/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5/3. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/5 times the cycle of the input image data.

When the conversion ratio is 5/4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5/4. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 4/5 times the cycle of the input image data.

When the conversion ratio is 6, the moving image quality can be improved as compared with the case where the conversion ratio is smaller than 6, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 6. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/6 times the period of the input image data.

When the conversion ratio is 6/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 6/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 6/5. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 5/6 times the cycle of the input image data.

When the conversion ratio is 7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/7 times the cycle of the input image data.

When the conversion ratio is 7/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/2. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 2/7 times the cycle of the input image data.

When the conversion ratio is 7/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/3. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/7 times the cycle of the input image data.

When the conversion ratio is 7/4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/4. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 4/7 times the cycle of the input image data.

When the conversion ratio is 7/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/5. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 5/7 times the cycle of the input image data.

When the conversion ratio is 7/6, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/6, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/6. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 6/7 times the cycle of the input image data.

When the conversion ratio is 8, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/8 times the cycle of the input image data.

When the conversion ratio is 8/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/3. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/8 times the cycle of the input image data.

When the conversion ratio is 8/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/5. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 5/8 times the cycle of the input image data.

When the conversion ratio is 8/7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8/7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/7. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 7/8 times the cycle of the input image data.

When the conversion ratio is 9, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/9 times the cycle of the input image data.

When the conversion ratio is 9/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/2. Further, since m is small, high image quality can be obtained while power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 2/9 times the cycle of the input image data.

When the conversion ratio is 9/4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/4. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 4/9 times the cycle of the input image data.

When the conversion ratio is 9/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/5. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 5/9 times the cycle of the input image data.

When the conversion ratio is 9/7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/7. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 7/9 times the cycle of the input image data.

When the conversion ratio is 9/8, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/8, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/8. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 8/9 times the cycle of the input image data.

A conversion ratio of 10 can improve the quality of the video compared to a conversion ratio of less than 10,
The power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10. Furthermore, m
Therefore, high image quality can be obtained while power consumption can be reduced. Furthermore, by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/10 times the cycle of the input image data,
The image quality can be improved.

When the conversion ratio is 10/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 10/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10/3. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/10 times the cycle of the input image data.

When the conversion ratio is 10/7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 10/7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10/7. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 7/10 times the cycle of the input image data.

When the conversion ratio is 10/9, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 10/9, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10/9. Furthermore, since m is large, the movement of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 9/10 times the cycle of the input image data.

It is obvious that each conversion ratio in the range where n is larger than 10 has the same advantage.

Next, as a second step, an image according to the input image data or each image whose frame rate is converted to an arbitrary rational number (n / m) times in the first step (referred to as an original image). ), A method of creating a plurality of different images (sub-images) and presenting the plurality of sub-images continuously in time will be described. In this way, even though a plurality of images are actually presented, it is possible to make human eyes perceive that one original image is displayed.

Here, among the sub-images created from one original image, the sub-image displayed first is referred to as a first sub-image. Here, it is assumed that the timing for displaying the first sub-image is the same as the timing for displaying the original image determined in the first step. on the other hand,
The sub image displayed after that will be referred to as a second sub image. The timing for displaying the second sub-image can be arbitrarily determined regardless of the timing for displaying the original image determined in the first step. Note that the image to be actually displayed is an image created from the original image by the method in the second step. Various images can be used as the original image for creating the sub-image. The number of sub-images is not limited to two and may be larger than two. In the second step, the number of sub-images is expressed as J (J is an integer of 2 or more). At this time, the sub-image displayed at the same timing as the original image determined in the first step is called the first sub-image, and the sub-image displayed subsequently is displayed. The second sub-image, the third sub-image, ...
, And called the Jth sub-image.

There are various methods for creating a plurality of sub-images from one original image, and the main methods include the following methods. One is a method of using the original image as it is as a sub-image. One is a method of distributing the brightness of the original image to a plurality of sub-images. One is a method of using an intermediate image obtained by motion compensation as a sub-image.

Here, the method of distributing the brightness of the original image to a plurality of sub-images can be further divided into a plurality of methods. The main methods are as follows. One is a method in which at least one sub-image is a black image (referred to as a black insertion method). One is
When the brightness of the original image is divided into a plurality of ranges and the brightness in the range is controlled, a method using only one sub-image among all the sub-images (referred to as a time-division gradation control method). ). One is a method in which one sub-image is a bright image in which the gamma value of the original image is changed and the other sub-image is a dark image in which the gamma value of the original image is changed (referred to as a gamma complement method). ).

Each of the methods listed above is briefly described. The method of using the original image as it is as the sub image uses the original image as it is as the first sub image. Further, the original image is used as it is as the second sub-image. When this method is used, a circuit for newly creating a sub-image is not operated or it is not necessary to use the circuit itself, so that power consumption and manufacturing cost can be reduced. In particular, in a liquid crystal display device, the first
In this step, it is preferable to use this method after performing frame rate conversion using an intermediate image obtained by motion compensation as an interpolated image. This is because the intermediate image obtained by motion compensation is used as an interpolated image, and the same image is repeatedly displayed while smoothing the motion of the moving image, resulting in a lack of writing voltage due to the dynamic capacitance of the liquid crystal element. This is because obstacles such as tailing and afterimage can be reduced.

Next, in the method for distributing the brightness of the original image to a plurality of sub-images, a method for setting the brightness of the image and the length of the period during which the sub-image is displayed will be described in detail. J represents the number of sub-images and is an integer of 2 or more. Lowercase j is distinct from uppercase J. Let j be an integer from 1 to J.
In normal hold driving, the pixel brightness is L, the period of the original image data is T,
The brightness L _j of the pixels in the sub-image of the _j, the length T _j of the period in which the sub image is displayed in the first _j, and when taking a product for L _j and T _j, from which the j = 1 Total up to j = J (L
₁ T ₁ + L ₂ T ₂ +... + L _J T _J ) is preferably equal to the product of L and T (LT) (the brightness is unchanged). Furthermore, the sum (T ₁ + T ₂ +... + T _J ) of T _j from j = 1 to j = J is equal to T (the display cycle of the original image is maintained). preferable. Here, the fact that the brightness remains unchanged and the display cycle of the original image is maintained is referred to as a sub-image distribution condition.

Of the methods for distributing the brightness of the original image to a plurality of sub-images, the black insertion method is a method in which at least one sub-image is a black image. By doing so, since the display method can be made to be an impulse type in a pseudo manner, it is possible to prevent the quality of the moving image from being deteriorated due to the hold type display method. Here, it is preferable to follow the sub-image distribution condition in order to prevent the brightness of the display image from being reduced due to the insertion of the black image. However, if the brightness of the display image is acceptable (such as dark surroundings), or if the user is set to allow the brightness of the display image to be reduced, the sub image It is not necessary to follow the distribution conditions. For example, one sub image may be the same as the original image, and the other sub image may be a black image. In this case, power consumption can be reduced compared to when the sub image distribution condition is followed. Furthermore, in a liquid crystal display device, when one sub-image is set to increase the overall brightness of the original image without limiting the maximum brightness, the brightness of the backlight is increased. Thus, the sub-image distribution condition may be realized. In this case, since the sub image distribution condition can be satisfied without controlling the voltage value written to the pixel, the operation of the image processing circuit can be omitted and the power consumption can be reduced.

The black insertion method is characterized in that L _{j of} all pixels is set to 0 in any one sub-image. By doing so, since the display method can be made to be an impulse type in a pseudo manner, it is possible to prevent a reduction in the quality of the moving image due to the hold type display method.

Of the methods for distributing the brightness of the original image to a plurality of sub-images, the time-division gradation control method divides the brightness of the original image into a plurality of ranges, and controls the brightness in the range. This is a method that uses only one of the sub-images. By doing so, the display method can be made to be a pseudo impulse type without lowering the brightness, so that the deterioration of the quality of the moving image due to the hold method being the display method can be prevented.

As a method of dividing the brightness of the original image into a plurality of ranges, the maximum brightness value (L _max )
There is a method of dividing by the number of sub-images. For example, in a display device in which the brightness from 0 to L _max can be adjusted in 256 steps (gradation 0 to gradation 255), when the number of sub-images is 2, gradation 0 to gradation 127 Is displayed, the brightness of one sub-image is adjusted in the range of gradation 0 to gradation 255, while the brightness of the other sub-image is set to gradation 0,
When displaying gradations 128 to 255, the brightness of one sub-image is set to gradation 255.
On the other hand, the brightness of the other sub-image is adjusted in the range of gradation 0 to gradation 255. By doing so, it can be perceived by human eyes as if the original image was displayed, and it can be made to be a pseudo impulse type, so that the quality of the moving image is deteriorated due to the hold type. Can be prevented. Note that the number of sub-images may be greater than two. For example, when the number of sub-images is 3, the brightness level of the original image (gradation 0 to gradation 2
55) is divided into three. Depending on the number of brightness levels of the original image and the number of sub-images, the number of brightness levels may not be divisible by the number of sub-images, but they are included in the respective brightness ranges after division. Even if the number of brightness levels is not exactly the same, they may be appropriately distributed.

Note that the time-division gradation control method is also preferable because when the sub-image distribution condition is satisfied, the brightness is not reduced and the same image as the original image can be displayed.

Of the methods that distribute the brightness of the original image to multiple sub-images, the gamma complement method uses one sub-image as a bright image with the gamma characteristics of the original image changed, and the other sub-image as the gamma of the original image. This is a method of obtaining a dark image with changed characteristics. By doing so, the display method can be made to be a pseudo impulse type without lowering the brightness, so that the deterioration of the quality of the moving image due to the hold method being the display method can be prevented. Here, the gamma characteristic is the degree of brightness with respect to the brightness level (gradation). Usually, the gamma characteristic is adjusted to be close to linear. This is because a smooth gradation can be obtained if the change in brightness is proportional to the gradation that is the stage of brightness. In the gamma interpolation method, the gamma characteristic of one of the sub-images is shifted from the linearity, and is adjusted so that it is brighter than the linearity in the intermediate brightness (halftone) region (the halftone becomes a brighter image than the original). )
. Then, the gamma characteristic of the other sub-image is also shifted from the linearity, and is adjusted so as to be darker than the linear in the same halftone region (the halftone becomes an image darker than the original). Here, the amount by which one sub-image is lighter than linear and the amount by which the other sub-image is darker than linear are
It is preferable to make them approximately equal for all gradations. By doing so, it can be perceived by the human eye as if the original image was displayed, and deterioration in the quality of the moving image due to the hold type can be prevented. Note that the number of sub-images may be greater than two. For example, if the number of sub-images is 3, if the gamma characteristics of each of the three sub-images are adjusted so that the total amount from linear to bright and the total amount from linear to dark are approximately equal Good.

Note that the gamma complementing method is also preferable because it can display the same image as the original image without lowering brightness by satisfying the sub-image distribution condition. further,
In the gamma complement method, since the change in the brightness L _j of each sub-image with respect to the gradation follows the gamma curve, each sub-image can display the gradation smoothly by itself,
Finally, it has the advantage of improving the quality of the image perceived by the human eye.

The method of using an intermediate image obtained by motion compensation as a sub image is a method in which one sub image is an intermediate image obtained by motion compensation from the preceding and succeeding images. By doing so, the motion of the image can be smoothed, so that the quality of the moving image can be improved.

Next, the relationship between the timing for displaying the sub image and the method for creating the sub image will be described. The timing for displaying the first sub-image is the same as the timing for displaying the original image determined in the first step, and the timing for displaying the second sub-image is the same as the timing determined in the first step. Although it can be arbitrarily determined regardless of the timing of displaying the image, the sub image itself may be changed according to the timing of displaying the second sub image. In this way, even when the timing for displaying the second sub-image is changed variously, it can be perceived by the human eye as if the original image was displayed. Specifically, if the timing for displaying the second sub-image is advanced, the first sub-image is brightened and the second
The sub-image can be made darker. Furthermore, when the timing for displaying the second sub-image is delayed, the first sub-image can be made darker and the second sub-image can be made lighter. This is because the brightness perceived by human eyes varies depending on the length of the period during which an image is displayed. More specifically, the brightness perceived by the human eye becomes brighter as the image display period is longer and darker as the image display period is shorter. That is, by increasing the timing for displaying the second sub-image, the length of the period for displaying the first sub-image is shortened, and the length of the period for displaying the second sub-image is increased. As it is, the first sub-image is dark and the second sub-image is bright and perceived by human eyes. As a result, an image different from the original image is perceived by the human eye.
The sub-image can be brighter and the second sub-image can be darker. Similarly, the second
By delaying the timing for displaying the second sub-image, the length of the period for displaying the first sub-image becomes longer, and the length of the period for displaying the second sub-image becomes shorter. The sub-image can be darker and the second sub-image can be brighter.

Based on the above description, the processing procedure in the second step is shown below.
As procedure 1, a method for creating a plurality of sub-images from one original image is determined. More specifically, a method of creating a plurality of sub-images includes a method of using the original image as it is as a sub-image, a method of distributing the brightness of the original image to the plurality of sub-images, and an intermediate image obtained by motion compensation as a sub-image. Can be selected from the methods used as
As procedure 2, the number J of sub-images is determined. J is an integer of 2 or more.
As procedure 3, the brightness L _j of the pixel in the j-th sub image and the length T _{j of the} period during which the j-th sub image is displayed are determined according to the method selected in procedure 1. According to the procedure 3, the length of the period during which each sub image is displayed and the brightness of each pixel included in each sub image are specifically determined.
As the procedure 4, the original image is processed according to the items determined in the procedures 1 to 3 and actually displayed.
In step 5, the target original image is moved to the next original image. And it returns to the procedure 1.

Note that the mechanism for executing the procedure in the second step may be implemented in the apparatus, or may be predetermined in the apparatus design stage. If a mechanism for executing the procedure in the second step is mounted on the apparatus, it is possible to switch the driving method so that the optimum operation according to the situation is performed. The situation here refers to the contents of the image data, the environment inside and outside the device (temperature, humidity, atmospheric pressure, light, sound, magnetic field, electric field, radiation dose,
Altitude, acceleration, moving speed, etc.), user settings, software version, etc. On the other hand, if the mechanism for executing the procedure in the second step is determined in advance at the device design stage, an optimum driving circuit for each driving method can be used, and the mechanism is determined. As a result, a reduction in manufacturing cost due to mass production effects can be expected.

Next, various driving methods determined by the procedure in the second step will be described in detail by specifically showing the values of n and m in the first step.

In the procedure 1 in the second step, when a method using the original image as it is as a sub-image is selected, the driving method is as follows.

I-th image data (i is a positive integer);
I + 1-th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L;
The j-th sub image (j is an integer from 1 to J) is formed by juxtaposing a plurality of pixels each having a unique brightness L _j and is displayed for the j-th sub image display period T _j. Image
L, T, L _j , T _j , a display device driving method that satisfies a sub-image distribution condition,
In all j, the brightness L _j of each pixel included in the j-th sub-image is characterized in that L _j = L for each pixel.
Here, the original image data created in the first step can be used as the image data sequentially prepared at a fixed period T. That is, all the display patterns mentioned in the description of the first step can be combined with the driving method.

When the number J of sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. It will be like that.
In FIG. 69, the horizontal axis represents time, and the vertical axis represents various n and m used in the first step.

For example, in the first step, when n = 1, m = 1, that is, when the conversion ratio (n / m) is 1, the driving method as shown in the location of n = 1, m = 1 in FIG. Become. At this time, the display frame rate is twice the frame rate of the input image data (double speed driving). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (120 Hz driving). Then, an image is continuously displayed twice for one input image data. Here, in the case of the double speed drive, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the double speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than the double speed. Furthermore, in the procedure 1 of the second step,
By selecting a method that uses the original image as a sub-image as it is, it is possible to stop the operation of a circuit that creates an intermediate image by motion compensation, or to omit the circuit itself from the device. Can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Further, it is effective to combine the AC drive and 120 Hz drive of the liquid crystal display device. That is, while the drive frequency of the liquid crystal display device is 120 Hz, the AC drive frequency is an integer multiple or a fraction thereof (for example, 30 Hz, 60 Hz).
, 120 Hz, 240 Hz, etc.), the flicker that appears due to AC driving can be reduced to the extent that it is not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about ½ times the cycle of the input image data.

Further, for example, in the first step, n = 2, m = 1, that is, the conversion ratio (n / m
) Is 2, the driving method is as shown in the locations of n = 2 and m = 1 in FIG. At this time, the display frame rate is four times (four times speed driving) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, four images are continuously displayed for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of the quadruple speed drive, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the quadruple speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than the quadruple speed. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of insufficient writing voltage due to dynamic capacitance can be avoided, it brings about a particularly remarkable image quality improvement effect against obstacles such as trailing of moving images and afterimages. Further, it is effective to combine the AC drive and 240 Hz drive of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 240 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), It can be reduced to a level not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/4 times the cycle of the input image data.

Further, for example, in the first step, n = 3, m = 1, that is, the conversion ratio (n / m
) Is 3, the driving method is as shown in FIG. 69 where n = 3 and m = 1. At this time, the display frame rate is 6 times (6 × speed driving) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 360 Hz (360 Hz drive). Then, six images are continuously displayed for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 6 × speed driving, the quality of the moving image can be improved as compared with the case where the frame rate is lower than 6 × speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is higher than 6 × speed. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of insufficient writing voltage due to dynamic capacitance can be avoided, it brings about a particularly remarkable image quality improvement effect against obstacles such as trailing of moving images and afterimages. It is also effective to combine AC driving and 360 Hz driving of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 360 Hz and setting the frequency of AC driving to an integer multiple or a fraction thereof (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.), flicker that appears due to AC driving is It can be reduced to a level not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/6 times the period of the input image data.

Further, for example, in the first step, n = 3, m = 2, that is, the conversion ratio (n / m
) Is 3/2, the driving method is as shown at n = 3 and m = 2 in FIG.
At this time, the display frame rate is three times (three times speed driving) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). An image is displayed three times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Where 3
In the double speed drive, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the triple speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than the triple speed. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Further, it is effective to combine the AC drive and 180 Hz drive of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 180 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.), flicker that appears due to AC driving is It can be reduced to a level not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/3 times the cycle of the input image data.

Further, for example, in the first step, n = 4, m = 1, that is, the conversion ratio (n / m
) Is 4, the driving method is as shown in FIG. 69 where n = 4 and m = 1. At this time, the display frame rate is 8 times (8 times speed driving) the frame rate of the input image data. Specifically, for example, when the input frame rate is 60 Hz, the display frame rate is 480 Hz (480 Hz drive). Then, an image is continuously displayed 8 times for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 8 × speed driving, the quality of the moving image can be improved as compared with the case where the frame rate is lower than 8 × speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is higher than 8 × speed. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of insufficient writing voltage due to dynamic capacitance can be avoided, it brings about a particularly remarkable image quality improvement effect against obstacles such as trailing of moving images and afterimages. Further, it is effective to combine the AC drive and 480 Hz drive of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 480 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), It can be reduced to a level not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/8 times the cycle of the input image data.

Further, for example, in the first step, n = 4, m = 3, that is, the conversion ratio (n / m
) Is 4/3, the driving method is as shown at n = 4 and m = 3 in FIG.
At this time, the display frame rate is 8/3 times the frame rate of the input image data (8
/ 3 times speed driving). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 160 Hz (160 Hz drive). Then, the image is continuously displayed eight times for the three input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 8/3 times speed driving, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than 8/3 times speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than 8/3 times speed. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage.
Furthermore, it is also effective to combine AC driving and 160 Hz driving of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 160 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 40 Hz, 80 Hz, 160 Hz, 320 Hz, etc.), It can be reduced to a level not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/8 times the cycle of the input image data.

Further, for example, in the first step, n = 5, m = 1, that is, the conversion ratio (n / m
) Is 5, the drive method is as shown in FIG. 69 where n = 5 and m = 1. At this time, the display frame rate is 10 times (10 times speed driving) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 600 Hz (600 Hz drive). Then, the image is continuously displayed ten times for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. here,
In the case of 10 × speed driving, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than 10 × speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than 10 × speed. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. It is also effective to combine the AC drive and 600 Hz drive of the liquid crystal display device. That is, by setting the driving frequency of the liquid crystal display device to 600 Hz and setting the AC driving frequency to an integral multiple or a fraction thereof (for example, 30 Hz, 60 Hz, 100 Hz, 120 Hz, etc.), It can be reduced to a level not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/10 times the cycle of the input image data.

Further, for example, in the first step, n = 5, m = 2, that is, the conversion ratio (n / m
) Is 5/2, the driving method is as shown in FIG. 69 where n = 5 and m = 2.
At this time, the display frame rate is 5 times (5 times speed driving) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, the image is continuously displayed five times for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 5 × speed driving, the quality of moving images can be improved as compared with the case where the frame rate is lower than 5 × speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is higher than 5 × speed. In addition, the second
In step 1 of step 1, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the apparatus. Power consumption and device manufacturing costs can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, it is also effective to combine AC driving and 300 Hz driving of the liquid crystal display device. That is, while the driving frequency of the liquid crystal display device is 300 Hz, the AC driving frequency is an integer multiple or a fraction thereof (
For example, by setting the frequency to 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc., flicker that appears due to AC driving can be reduced to a level that is not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/5 times the cycle of the input image data.

As described above, in the procedure 1 in the second step, a method of using the original image as it is as a sub-image is selected.
In the procedure 2 in the second step, the number of sub-images is determined to be 2,
In the procedure 3 in the second step, if it is determined that T1 = T2 = T / 2,
Since the display frame rate can be further doubled with respect to the frame rate conversion of the conversion ratio determined by the values of n and m in this step, the quality of the moving image can be further improved. Furthermore, the quality of the moving image can be improved as compared with the case where the display frame rate is lower than the display frame rate, and the power consumption and the manufacturing cost can be reduced as compared with the case where the display frame rate is higher than the display frame rate.
Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. further,
By increasing the drive frequency of the liquid crystal display device and setting the AC drive frequency to an integral multiple or a fraction thereof, flickers that appear due to the AC drive can be reduced to a level that is not perceived by human eyes. Furthermore, the response time of the liquid crystal element is the period of the input image data (
By applying to a liquid crystal display device that is about 1 / (twice the conversion ratio)), the image quality can be improved.

Although detailed description is omitted, it is clear that the same advantages can be obtained in cases other than the conversion ratio raised above. For example, in the range where n is 10 or less, in addition to those listed above,
n = 5, m = 3, that is, conversion ratio (n / m) = 5/3 (10/3 double speed drive, 200 Hz)
,
n = 5, m = 4, that is, conversion ratio (n / m) = 5/4 (5/2 double speed drive, 150 Hz),
n = 6, m = 1, that is, conversion ratio (n / m) = 6 (12 × speed drive, 720 Hz),
n = 6, m = 5, that is, conversion ratio (n / m) = 6/5 (12/5 double speed drive, 144 Hz)
,
n = 7, m = 1, that is, conversion ratio (n / m) = 7 (14 × speed drive, 840 Hz),
n = 7, m = 2, that is, conversion ratio (n / m) = 7/2 (7-times speed drive, 420 Hz),
n = 7, m = 3, that is, conversion ratio (n / m) = 7/3 (14/3 double speed drive, 280 Hz)
,
n = 7, m = 4, that is, conversion ratio (n / m) = 7/4 (7/2 double speed drive, 210 Hz),
n = 7, m = 5, that is, conversion ratio (n / m) = 7/5 (14/5 double speed drive, 168 Hz)
,
n = 7, m = 6, that is, conversion ratio (n / m) = 7/6 (7/3 double speed drive, 140 Hz),
n = 8, m = 1, that is, conversion ratio (n / m) = 8 (16 × speed driving, 960 Hz),
n = 8, m = 3, that is, conversion ratio (n / m) = 8/3 (16/3 double speed drive, 320 Hz)
,
n = 8, m = 5, ie conversion ratio (n / m) = 8/5 (16/5 double speed drive, 192 Hz)
,
n = 8, m = 7, that is, conversion ratio (n / m) = 8/7 (16/7 double speed drive, 137 Hz)
,
n = 9, m = 1, that is, conversion ratio (n / m) = 9 (18 × speed driving, 1080 Hz),
n = 9, m = 2, that is, conversion ratio (n / m) = 9/2 (9-times speed driving, 540 Hz),
n = 9, m = 4, that is, conversion ratio (n / m) = 9/4 (9/2 double speed drive, 270 Hz),
n = 9, m = 5, that is, conversion ratio (n / m) = 9/5 (18/5 double speed drive, 216 Hz)
,
n = 9, m = 7, ie conversion ratio (n / m) = 9/7 (18/7 double speed drive, 154 Hz)
,
n = 9, m = 8, that is, conversion ratio (n / m) = 9/8 (9/4 double speed drive, 135 Hz),
n = 10, m = 1, that is, conversion ratio (n / m) = 10 (20 × speed drive, 1200 Hz),
n = 10, m = 3, that is, conversion ratio (n / m) = 10/3 (20/3 double speed drive, 400H
z),
n = 10, m = 7, that is, conversion ratio (n / m) = 10/7 (20/7 double speed drive, 171H
z),
n = 10, m = 9, that is, conversion ratio (n / m) = 10/9 (20/9 double speed drive, 133H
z),
The above combinations are possible. The frequency notation is an example when the input frame rate is 60 Hz. For other input frame rates, a value obtained by integrating twice the respective conversion ratios with the input frame rate is the drive frequency.

In the case where n is an integer greater than 10, specific numbers of n and m are not mentioned, but it is clear that the procedure in the second step can be applied to various n and m. .

When J = 2, it is particularly effective if the conversion ratio in the first step is greater than 2. This is because if the number of sub-images is relatively small in the second step, such as J = 2, the conversion ratio in the first step can be increased accordingly. Such a conversion ratio is 3, 4, 5, 5/2, 6, 7 in a range where n is 10 or less.
7/2, 7/3, 8, 8/3, 9, 9/2, 9/4, 10, 10/3.
When the display frame rate after the first step is such a value, an advantage of reducing the number of sub-images in the second step (reducing power consumption and manufacturing cost, etc.) by setting J = 3 or more. In addition, it is possible to achieve both the advantages (high quality of moving images, reduction of flicker, etc.) due to the large final display frame rate.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where T ₂ = T / 2 has been described has been described, it is obvious that the present invention is not limited to this.

For example, in the procedure 3 in the second step, when T ₁ <T ₂ is determined, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined that T ₁ > T ₂ in the procedure 3 in step S1, the first sub-image can be made darker and the second sub-image can be made lighter. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. However, when the method of using the original image as it is as the sub image is selected in the procedure 1 as in the above driving method, it may be displayed as it is without changing the brightness of the sub image. This is because in this case, since the images used as the sub images are the same, the original image can be displayed properly regardless of the display timing of the sub images.

Further, in the procedure 2, it is obvious that the number J of sub-images may be determined other than 2 instead of 2. In this case, the display frame rate can be further increased to J times the frame rate conversion of the conversion ratio determined by the values of n and m in the first step, so that the quality of the moving image is further improved. Is possible. Furthermore, the quality of the moving image can be improved as compared with the case where the display frame rate is lower than the display frame rate, and the power consumption and the manufacturing cost can be reduced as compared with the case where the display frame rate is higher than the display frame rate. Further, in the procedure 1 of the second step, the method of using the original image as it is as the sub-image is selected, so that the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and device manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, by increasing the driving frequency of the liquid crystal display device and setting the AC driving frequency to an integral multiple or a fraction thereof, flicker that appears due to AC driving can be reduced to a level that is not perceived by human eyes. it can. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (J times the conversion ratio)) times the cycle of the input image data.

For example, when J = 3, the quality of the moving image can be improved more than when the number of sub-images is smaller than 3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the number of sub-images is larger than 3. Have advantages. Further, the response time of the liquid crystal element is (1 of the cycle of the input image data.
By applying to a liquid crystal display device that is approximately / (3 times the conversion ratio)) times, the image quality can be improved.

Furthermore, for example, when J = 4, the quality of the moving image can be improved particularly when the number of sub-images is smaller than 4, and the power consumption and the manufacturing cost are reduced as compared with the case where the number of sub-images is larger than 4. It has the advantage of being able to. Furthermore, by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1 / (4 times the conversion ratio) of the cycle of the input image data, the image quality can be improved.

Furthermore, for example, when J = 5, the quality of the moving image can be improved particularly when the number of sub-images is smaller than 5, and the power consumption and the manufacturing cost are reduced as compared with the case where the number of sub-images is larger than 5. It has the advantage of being able to. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1 / (5 times the conversion ratio) times the cycle of the input image data.

Furthermore, even if J is other than those listed above, it has similar advantages.

When J = 3 or more, the conversion ratio in the first step can take various values. In particular, when the conversion ratio in the first step is relatively small (2 or less), J = 3
The above is effective. This is because if the display frame rate after the first step is relatively small, J can be increased by that amount in the second step. Such a conversion ratio is 1, 2, 3/2, 4/3, in the range where n is 10 or less.
5/3, 5/4, 6/5, 7/4, 7/5, 7/6, 8/7, 9/5, 9/7, 9/8,
10/7, 10/9. Of these, the conversion ratio is 1, 2, 3/2, 4/3, 5 /
The cases of 3, 5/4 are illustrated in FIG. As described above, when the display frame rate after the first step is a relatively small value, by setting J = 3 or more, the advantage of the small display frame rate in the first step (the power consumption and the manufacturing cost can be reduced). Reduction) and the advantages (high quality of moving images, reduction of flicker, etc.) due to a large final display frame rate can be achieved at the same time.

Next, another example of the driving method determined by the procedure in the second step will be described.

In the procedure 1 in the second step, when the black insertion method is selected among the methods of distributing the brightness of the original image to the plurality of sub-images, the driving method is as follows.

I-th image data (i is a positive integer);
I + 1-th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L;
The j-th sub image (j is an integer from 1 to J) is formed by juxtaposing a plurality of pixels each having a unique brightness L _j and is displayed for the j-th sub image display period T _j. Image
L, T, L _j , T _j , a display device driving method that satisfies a sub-image distribution condition,
In at least one j, the brightness L _{j of} all the pixels included in the j-th sub-image is expressed as L _j
= 0.
Here, the original image data created in the first step can be used as the image data sequentially prepared at a fixed period T. That is, all the display patterns mentioned in the description of the first step can be combined with the driving method.

It should be noted that the above driving method can be implemented in combination with respect to various n and m used in the first step.

When the number J of sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. It will be like that.
Since the features and advantages of the driving method (display timings at various n and m) shown in FIG. It is clear that the same advantage is obtained when the black insertion method is selected among the methods for distributing the image to a plurality of sub-images. For example, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is high, the quality of the moving image can be improved, and when the display frame rate is low, power consumption and manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye.

Among the methods for distributing the brightness of the original image to a plurality of sub-images in the procedure 1 of the second step, the characteristic advantage of selecting the black insertion method is that an intermediate image is created by motion compensation. Since the operation of the circuit can be stopped or the circuit itself can be omitted from the device,
The power consumption and the manufacturing cost of the device can be reduced. Furthermore, since the impulse-type display method can be made pseudo regardless of the gradation value included in the image data, the quality of the moving image can be improved.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where T ₂ = T / 2 has been described has been described, it is obvious that the present invention is not limited to this.

For example, in the procedure 3 in the second step, when T ₁ <T ₂ is determined, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined that T ₁ > T ₂ in the procedure 3 in step S1, the first sub-image can be made darker and the second sub-image can be made lighter. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. However, when the black insertion method is selected among the methods for distributing the brightness of the original image to the plurality of sub-images in the procedure 1 as in the above driving method, the brightness of the sub-image is not changed. Alternatively, it may be displayed as it is. because,
In this case, if the brightness of the sub-image is not changed, the entire brightness of the original image is only darkened and displayed. In other words, by actively using this method for controlling the brightness of the display device, the brightness can be controlled while improving the quality of the moving image.

Further, in the procedure 2, it is obvious that the number J of sub-images may be determined other than 2 instead of 2. Since the advantages in that case have already been described, a detailed description is omitted here. Of the methods for distributing the brightness of the original image to a plurality of sub-images in the procedure 1 in the second step, the black insertion method is used. Obviously, the selected case has similar advantages. For example, the response time of the liquid crystal element is 1 / (J times the conversion ratio) of the cycle of the input image data
) The image quality can be improved by applying to a liquid crystal display device of about double.

Next, another example of the driving method determined by the procedure in the second step will be described.

In the procedure 1 in the second step, when the time-division gradation control method is selected from among the methods for distributing the brightness of the original image to the plurality of sub-images, the driving method is as follows.

I-th image data (i is a positive integer);
I + 1-th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L;
The inherent brightness L has a maximum value L _max ,
The j-th sub image (j is an integer from 1 to J) is formed by juxtaposing a plurality of pixels each having a unique brightness L _j and is displayed for the j-th sub image display period T _j. Image
L, T, L _j , T _j , a display device driving method that satisfies a sub-image distribution condition,
In displaying the inherent brightness L, from (j−1) × L _max / J to J × L _max
The adjustment of the brightness in the brightness range of / J is performed by adjusting the brightness in only one sub-image display period among the J sub-image display periods.
Here, the original image data created in the first step can be used as the image data sequentially prepared at a fixed period T. That is, all the display patterns mentioned in the description of the first step can be combined with the driving method.

It should be noted that the above driving method can be implemented in combination with respect to various n and m used in the first step.

When the number J of sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. It will be like that.
Since the features and advantages of the driving method (display timings at various n and m) shown in FIG. 69 have already been described, detailed description is omitted here, but in Procedure 1 in the second step, the brightness of the original image It is clear that the same advantage is obtained when the time-division gradation control method is selected among the methods for distributing the image to a plurality of sub-images. For example, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is high, the quality of the moving image can be improved, and when the display frame rate is low, power consumption and manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye.

Among the methods of distributing the brightness of the original image to the plurality of sub-images in the procedure 1 of the second step, the characteristic advantage of selecting the time-division gradation control method is that the intermediate image is obtained by motion compensation. Since the operation of the circuit for generating the circuit can be stopped or the circuit itself can be omitted from the apparatus, the power consumption and the manufacturing cost of the apparatus can be reduced. further,
Since a pseudo impulse display method can be used, the quality of moving images can be improved and the brightness of the display device does not decrease, so that power consumption can be further reduced.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where T ₂ = T / 2 has been described has been described, it is obvious that the present invention is not limited to this.

For example, in the procedure 3 in the second step, when T ₁ <T ₂ is determined, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined that T ₁ > T ₂ in the procedure 3 in step S1, the first sub-image can be made darker and the second sub-image can be made lighter. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved.

Further, in the procedure 2, it is obvious that the number J of sub-images may be determined other than 2 instead of 2. Since the advantages in that case have already been described, detailed description is omitted here, but among the methods of distributing the brightness of the original image to a plurality of sub-images in step 1 in the second step, time-division gradation Obviously, when the control method is selected, it has similar advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1 / (J times the conversion ratio) of the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described.

In the procedure 1 in the second step, when the gamma complement method is selected among the methods for distributing the brightness of the original image to the plurality of sub-images, the driving method is as follows.

I-th image data (i is a positive integer);
I + 1-th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L;
The j-th sub image (j is an integer from 1 to J) is formed by juxtaposing a plurality of pixels each having a unique brightness L _j and is displayed for the j-th sub image display period T _j. Image
L, T, L _j , T _j , a display device driving method that satisfies a sub-image distribution condition,
In each sub-image, the brightness change characteristic with respect to the gradation is shifted from linear, and the total amount of brightness shifted from linear to brighter and the total amount of brightness shifted from linear to darker are , It is characterized by being approximately equal in all gradations.
Here, the original image data created in the first step can be used as the image data sequentially prepared at a fixed period T. That is, all the display patterns mentioned in the description of the first step can be combined with the driving method.

It should be noted that the above driving method can be implemented in combination with respect to various n and m used in the first step.

When the number J of sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. It will be like that.
Since the features and advantages of the driving method (display timings at various n and m) shown in FIG. It is clear that the same advantage is obtained when the gamma complement method is selected among the methods for distributing the image to a plurality of sub-images. For example, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is high, the quality of the moving image can be improved, and when the display frame rate is low, power consumption and manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against a failure such as a trailing image or an afterimage. Furthermore, flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye.

In the procedure 1 of the second step, among the methods for distributing the brightness of the original image to a plurality of sub-images, a characteristic advantage of selecting the gamma complement method is that an intermediate image is created by motion compensation. Since the operation of the circuit can be stopped or the circuit itself can be omitted from the apparatus, the power consumption and the manufacturing cost of the apparatus can be reduced. Furthermore, since the impulse-type display method can be made pseudo regardless of the gradation value included in the image data, the quality of the moving image can be improved. Further, the sub image may be obtained by directly gamma-converting the image data. In this case, there is an advantage that the gamma value can be controlled variously depending on the magnitude of the motion of the moving image. Further, the image data may not be directly gamma-converted, and the sub-image with the changed gamma value may be obtained by changing the reference voltage of the digital-analog converter circuit (DAC). In this case, since the image data is not directly gamma-converted, a circuit for performing gamma conversion can be stopped or the circuit itself can be omitted from the apparatus, so that power consumption and manufacturing cost of the apparatus can be reduced. . Further, in the gamma complement method, since the change in the brightness L _j of each sub-image with respect to the gradation follows the gamma curve, each sub-image can display the gradation smoothly by itself, and finally the human The image quality perceived by the eyes is also improved.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where T ₂ = T / 2 has been described has been described, it is obvious that the present invention is not limited to this.

For example, in the procedure 3 in the second step, when T ₁ <T ₂ is determined, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined that T ₁ > T ₂ in the procedure 3 in step S1, the first sub-image can be made darker and the second sub-image can be made lighter. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. As in the above driving method, the procedure 1
In the method of distributing the brightness of the original image to the plurality of sub-images, when the gamma method is selected, the gamma value may be changed when the brightness of the sub-image is changed. That is, the gamma value may be determined according to the display timing of the second sub-image. In this way, a circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the apparatus, so that power consumption and manufacturing cost of the apparatus can be reduced.

Further, in the procedure 2, it is obvious that the number J of sub-images may be determined other than 2 instead of 2. Since the advantages in that case have already been described, detailed description is omitted here, but among the methods of distributing the brightness of the original image to a plurality of sub-images in step 1 in the second step, time-division gradation Obviously, when the control method is selected, it has similar advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1 / (J times the conversion ratio) of the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described in detail.

In the procedure 1 in the second step, a method of using the intermediate image obtained by motion compensation as a sub-image is selected,
In the procedure 2 in the second step, the number of sub-images is determined to be 2,
If it is determined in the procedure 3 in the second step that T1 = T2 = T / 2, the second
The driving method determined by the procedure in this step is as follows.

I-th image data (i is a positive integer);
I + 1-th image data are sequentially prepared at a constant period T,
A k-th image (k is a positive integer);
The (k + 1) th image,
A display device driving method for sequentially displaying k + 2 images at intervals of 1/2 times the period of original image data,
The k-th image is displayed according to the i-th image data;
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by halving the movement from the i-th image data to the (i + 1) -th image data,
The k + 2th image is displayed according to the i + 1th image data.
Here, the original image data created in the first step can be used as the image data sequentially prepared at a fixed period T. That is, all the display patterns mentioned in the description of the first step can be combined with the driving method.

It should be noted that the above driving method can be implemented in combination with respect to various n and m used in the first step.

In the procedure 1 in the second step, the characteristic advantage of selecting the method using the intermediate image obtained by motion compensation as a sub-image is that the intermediate image obtained by motion compensation in the procedure in the first step is selected. When the interpolated image is used, the method for obtaining the intermediate image used in the first step can be used as it is in the second step. That is, a circuit for obtaining an intermediate image by motion compensation can be used not only in the first step but also in the second step, so that the circuit can be used effectively and the processing efficiency can be improved. In addition, since the movement of the image can be further smoothed, the quality of the moving image can be further improved.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where T ₂ = T / 2 has been described has been described, it is obvious that the present invention is not limited to this.

For example, in the procedure 3 in the second step, when T ₁ <T ₂ is determined, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined that T ₁ > T ₂ in the procedure 3 in step S1, the first sub-image can be made darker and the second sub-image can be made lighter. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. In this way, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. As in the above driving method, in step 2,
When a method using an intermediate image obtained by motion compensation as a sub-image is selected, the brightness of the sub-image need not be changed. This is because the image in the intermediate state is completed as an image by itself, so that even if the display timing of the second sub-image changes, the image perceived by human eyes does not change. In this case, a circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the apparatus, so that power consumption and manufacturing cost of the apparatus can be reduced.

Further, in the procedure 2, it is obvious that the number J of sub-images may be determined other than 2 instead of 2. Since the advantages in that case have already been described, detailed description will be omitted here, but the same applies when the method using the intermediate image obtained by motion compensation as the sub image is selected in step 1 in the second step. Obviously, it has many advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1 / (J times the conversion ratio) of the cycle of the input image data.

Next, a specific example of the frame rate conversion method when the input frame rate and the display frame rate are different will be described with reference to FIG. In the method shown in FIGS. 71A to 71C, it is assumed that a circular area on the image is an area whose position changes depending on the frame, and a triangular area on the image is an area whose position hardly changes depending on the frame. Yes. However,
This is an example for explanation, and the displayed image is not limited to this. The methods shown in FIGS. 71A to 71C can be applied to various images.

FIG. 71A shows a case where the display frame rate is twice the input frame rate (conversion ratio is 2). When the conversion ratio is 2, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 2. Furthermore, when the conversion ratio is 2, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 2. FIG. 71 (
A) schematically shows the temporal change of the displayed image with the horizontal axis as time. Here, the image of interest is referred to as a p-th image (p is a positive integer). The image displayed next to the image of interest is the (p + 1) th image,
For the sake of convenience, how far away from the image of interest the image that is displayed before the image of interest is displayed, such as the (p-1) -th image. I will do it. The image 180701 is the pth image, the image 180702 is the (p + 1) th image, the image 180703 is the (p + 2) th image, the image 180704 is the (p + 3) th image, the image1
It is assumed that 80705 is the (p + 4) th image. The period Tin represents the cycle of the input image data. Note that FIG. 71A illustrates the case where the conversion ratio is 2, and thus the period Tin
Is twice as long as the period from when the pth image is displayed until the (p + 1) th image is displayed.

Here, the (p + 1) -th image 180702 is changed from the p-th image 180701 to the (p + 2) -th image.
It may be an image created so as to be in an intermediate state between the p-th image 180701 and the (p + 2) -th image 180703 by detecting the amount of change in the image up to the image 180703. In FIG. 71A, the state of the image in the intermediate state is represented by a region (a circular region) whose position changes depending on the frame and a region (a triangular region) whose position hardly changes depending on the frame. That is, the position of the circular area in the (p + 1) th image 180702 is an intermediate position between the position in the pth image 180701 and the position in the (p + 2) image 180703. That is, the (p + 1) th image 180702 is obtained by performing motion compensation and interpolating image data. Thus, smooth display can be performed by performing motion compensation on an object having motion on the image and interpolating the image data.

Further, the (p + 1) -th image 180702 includes the p-th image 180701 and the (p + 2) -th image.
The image may be an image in which the brightness of the image is controlled according to a certain rule. For example, as shown in FIG. 71 (A), the fixed rule is L when the representative luminance of the p-th image 180701 is L and the representative luminance of the (p + 1) -th image 180702 is Lc. Lc may have a relationship of L> Lc. Preferably
There may be a relationship of 0.1L <Lc <0.8L. More desirably, 0.2L <L
There may be a relationship of c <0.5L. Or conversely, there may be a relationship of L <Lc between L and Lc. Desirably, there may be a relationship of 0.1Lc <L <0.8Lc.
More desirably, there may be a relationship of 0.2Lc <L <0.5Lc. By doing so, the display can be made pseudo-impulse type, so that an afterimage of the eye can be suppressed.

Note that typical luminance of an image will be described in detail later with reference to FIG.

In this way, there are two different causes for moving image blur (that is, the movement of the image is not smooth,
And the afterimage of the eye) can be solved at the same time to greatly reduce motion blur.

Further, for the (p + 3) -th image 180704, the (p + 2) -th image 180703 is also used.
It may also be created from the (p + 4) th image 180705 using a similar method. That is, the (p + 3) -th image 180704 is changed from the (p + 2) -th image 180703 to the (p + 2) -th image 180704.
By detecting the amount of change in the image up to +4) image 180705, the (p + 2) th image 1
The image may be an image created so as to be in an intermediate state between the 80703 and the (p + 4) th image 180705, and the image brightness may be controlled according to a certain rule.

FIG. 71B shows a case where the display frame rate is three times the input frame rate (conversion ratio is 3). FIG. 71B schematically shows a temporal change in the displayed image with the horizontal axis as time. An image 180711 is a p-th image, an image 1807
12 is a (p + 1) th image, and image 180713 is a (p + 2) th image, image 180714.
Is the (p + 3) th image, image 180715 is the (p + 4) th image, image 180716 is the (p + 5) th image, and image 180717 is the (p + 6) th image. The period Tin represents the cycle of the input image data. 71B shows a case where the conversion ratio is 3, the period Tin is three times the period from when the p-th image is displayed until the (p + 1) -th image is displayed. It becomes length.

Here, the (p + 1) -th image 180712 and the (p + 2) -th image 180713 detect the amount of change in the image from the p-th image 180711 to the (p + 3) -th image 180714, and thereby the p-th image 180711. It may also be an image created so as to be in an intermediate state between the (p + 3) -th image 180714. In FIG. 71 (B), the state of the image in the intermediate state is represented by an area (a circular area) whose position changes with the frame and an area (a triangular area) whose position does not substantially change with the frame. That is, the position of the circular area in the (p + 1) th image 180712 and the (p + 2) image 180713 is set to a position intermediate between the position in the pth image 180711 and the position in the (p + 3) image 180714. Specifically, when the amount of movement of the circular area detected from the p-th image 180711 and the (p + 3) image 180714 is X, the position of the circular area in the (p + 1) -th image 180712 is It may be a position displaced about (1/3) X from the position in the p-th image 180711. Furthermore, the (p + 2) -th image 1807
The position of the circular area in 13 is (2/3) from the position in the p-th image 180711.
) The position may be displaced by about X. That is, the (p + 1) th image 180712 and the (p + 2) image 180713 are obtained by performing motion compensation and interpolating image data. Thus, smooth display can be performed by performing motion compensation on an object having motion on an image and interpolating image data.

Furthermore, the (p + 1) -th image 180712 and the (p + 2) -th image 180713 are created so as to be in an intermediate state between the p-th image 180711 and the (p + 3) -th image 180714, and the brightness of the image is constant. The image may be controlled according to the rules. The certain rule is, for example, as shown in FIG. 71B, the representative luminance of the p-th image 180711 is L,
The typical luminance of the (p + 1) -th image 180712 is Lc1, and the (p + 2) -th image 180713.
When Lc2 is a representative luminance, L> Lc1 or L in L, Lc1, and Lc2
There may be a relationship of> Lc2 or Lc1 = Lc2. Desirably, 0.1 L <Lc
There may be a relationship of 1 = Lc2 <0.8L. More preferably, 0.2L <Lc =
There may be a relationship of Lc2 <0.5L. Or, conversely, in L, Lc1, and Lc2, there may be a relationship of L <Lc1 or L <Lc2 or Lc1 = Lc2. Desirably, there may be a relationship of 0.1Lc1 = 0.1Lc2 <L <0.8Lc1 = 0.8Lc2. More preferably, 0.2Lc1 = 0.2Lc2 <L <0.5Lc1 = 0.5
There may be a relationship of Lc2. By doing so, the display can be made pseudo-impulse type, so that an afterimage of the eye can be suppressed. Or you may make it the image which changes a brightness | luminance appear alternately. By doing so, the cycle in which the luminance changes can be shortened, and flicker can be reduced.

In this way, there are two different causes for moving image blur (that is, the movement of the image is not smooth,
And the afterimage of the eye) can be solved at the same time to greatly reduce motion blur.

Further, the (p + 4) image 180715 and the (p + 5) image 180716 may also be created from the (p + 3) image 180714 and the (p + 6) image 180717 using the same method. That is, the (p + 4) -th image 180715 and the (p + 5) -th image 180716 are detected by detecting the amount of change in the image from the (p + 3) -th image 180714 to the (p + 6) -th image 180717 (p + 3). Image 18071
The image may be an image created so as to be in an intermediate state between the fourth and (p + 6) th images 180717, and the image brightness may be controlled according to a certain rule.

When the method shown in FIG. 71B is used, since the display frame rate is large, the movement of the image can follow the movement of the eyes well, and the movement of the image can be displayed smoothly. Can be greatly reduced.

In FIG. 71C, the display frame rate is 1.5 times the input frame rate (conversion ratio 1.5).
). FIG. 71C schematically shows the temporal change of the displayed image with the horizontal axis as time. Image 180721 is the pth image, image 1
80722 is the (p + 1) -th image, image 180723 is the (p + 2) -th image, and image 180
Suppose that 724 is the (p + 3) th image. Although not actually displayed, the image 180725 is input image data, and the (p + 1) th image 180722 and the (p
+2) image 180723 may be used to create the image. The period Tin represents the cycle of the input image data. Note that FIG. 71C illustrates the case where the conversion ratio is 1.5. Therefore, the period Tin is a period from the display of the p-th image to the display of the (p + 1) -th image. .5 times longer.

Here, the (p + 1) -th image 180722 and the (p + 2) -th image 180723 are transmitted from the p-th image 180721 through the image 180725 to the (p + 3) -th image 180724.
The image may be an image created so as to be in an intermediate state between the p-th image 180721 and the (p + 3) -th image 180724 by detecting the change amount of the image up to. In FIG. 71C, the state of the image in the intermediate state is represented by a region (a circular region) whose position is changed by the frame and a region (a triangular region) whose position is hardly changed by the frame.
That is, the position of the circular area in the (p + 1) th image 180722 and the (p + 2) th image 180723 is an intermediate position between the position in the pth image 180721 and the position in the (p + 3) image 180724. That is, the (p + 1) th image 180
The 722 and the (p + 2) -th image 180723 are obtained by performing motion compensation and interpolating image data. Thus, smooth display can be performed by performing motion compensation on an object having motion on an image and interpolating image data.

Further, the (p + 1) -th image 180722 and the (p + 2) -th image 180723 are created so as to be in an intermediate state between the p-th image 180721 and the (p + 3) -th image 180724, and the brightness of the image is constant. The image may be controlled according to the rules. The certain rule is, for example, as shown in FIG. 71C, the representative luminance of the p-th image 180721 is L,
The typical luminance of the (p + 1) -th image 180722 is Lc1, and the (p + 2) -th image 180723.
When Lc2 is a representative luminance, L> Lc1 or L in L, Lc1, and Lc2
There may be a relationship of> Lc2 or Lc1 = Lc2. Desirably, 0.1 L <Lc
There may be a relationship of 1 = Lc2 <0.8L. More preferably, 0.2L <Lc =
There may be a relationship of Lc2 <0.5L. Or, conversely, in L, Lc1, and Lc2, there may be a relationship of L <Lc1 or L <Lc2 or Lc1 = Lc2. Desirably, there may be a relationship of 0.1Lc1 = 0.1Lc2 <L <0.8Lc1 = 0.8Lc2. More preferably, 0.2Lc1 = 0.2Lc2 <L <0.5Lc1 = 0.5
There may be a relationship of Lc2. By doing so, the display can be made pseudo-impulse type, so that an afterimage of the eye can be suppressed. Or you may make it the image which changes a brightness | luminance appear alternately. By doing so, the cycle in which the luminance changes can be shortened, and flicker can be reduced.

In this way, there are two different causes for moving image blur (that is, the movement of the image is not smooth,
And the afterimage of the eye) can be solved at the same time to greatly reduce motion blur.

Note that when the method in FIG. 71C is used, the display frame rate is low, so that the time for writing a signal to the display device can be extended. Therefore, the clock frequency of the display device can be reduced, so that power consumption can be reduced. In addition, since the processing speed for performing motion compensation can be reduced, power consumption can be reduced.

Next, typical luminance of an image will be described with reference to FIG. 72 (A) to (D
The diagram shown in () schematically represents the temporal change of the displayed image with the horizontal axis as time. FIG. 72E illustrates an example of a method for measuring the luminance of an image in a certain region.

As a method of measuring the luminance of an image, there is a method of measuring the luminance individually for each pixel constituting the image. When this method is used, it is possible to measure the brightness strictly to the details of the image.

However, since the method of measuring the luminance individually for each pixel constituting the image is very labor intensive, another method may be used. As another method for measuring the luminance of the image, there is a method of paying attention to a certain area in the image and measuring the average luminance of the area. By this method, the brightness of the image can be easily measured. In the present embodiment, the luminance obtained by the method of measuring the average luminance of a certain area in the image is referred to as the representative luminance of the image for convenience.

Then, in order to obtain the representative luminance of the image, a description will be given below of which region in the image is focused.

FIG. 72A illustrates an example of a method in which the luminance of a region (a triangular region) whose position does not substantially change with respect to a change in the image is set as a representative luminance of the image. The period Tin is the cycle of the input image data, the image 180801 is the pth image, the image 180802 is the (p + 1) th image, and the image 18
0803 is the (p + 2) -th image, the first area 180804 is the luminance measurement area in the p-th image 180801, the second area 180805 is the luminance measurement area in the (p + 1) -th image 180802, and the third area 180806 is the first area. The luminance measurement areas in the (p + 2) image 180803 are respectively shown. Here, the first to third regions may be substantially the same as the spatial position in the apparatus. That is, by measuring the representative luminance of the image in the first to third regions, it is possible to obtain the temporal change in the representative luminance of the image.

By measuring the representative luminance of the image, it can be determined whether or not the display is pseudo-impulse type. For example, the luminance measured in the first region 180804 is L,
When the luminance measured in the second region 180805 is Lc, if Lc <L, the display can be said to be a pseudo impulse type. In such a case, it can be said that the quality of the moving image is improved.

It should be noted that in the luminance measurement region, the image quality can be improved if the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. As the relative luminance, for example, the larger one for each of the first region 180804 and the second region 180805, the second region 180805 and the third region 180806, and the first region 180804 and the third region 180806, respectively. It can be the ratio of the smaller luminance to the luminance. That is, when the change amount of the typical luminance of the image with respect to the change of time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of the moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of the moving image can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of moving images can be improved, and power consumption and flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and flicker can be significantly reduced.

FIG. 72B shows an example of a method of measuring the luminance of the area divided into tiles and setting the average value as the representative luminance of the image. The period Tin is the period of the input image data, and the image 1808
11 is the p-th image, image 180812 is the (p + 1) -th image, and image 180813 is the (p-th) image.
+2) image, the first region 180814 is the luminance measurement region in the p-th image 180811, the second region 180815 is the luminance measurement region in the (p + 1) -th image 180812, and the third region 180816 is the (p + 2) -th image. The luminance measurement areas in the image 180813 are respectively shown. Here, the first to third regions may be substantially the same as the spatial position in the apparatus. That is, by measuring the representative luminance of the image in the first to third regions, it is possible to obtain the temporal change in the representative luminance of the image.

By measuring the representative luminance of the image, it can be determined whether or not the display is pseudo-impulse type. For example, if Lc is an average value in all areas of luminance measured in the first area 180814 and Lc is an average value in all areas of luminance measured in the second area 180815, then Lc <L. In other words, it can be said that the display is a pseudo impulse type. In such a case, it can be said that the quality of the moving image is improved.

It should be noted that in the luminance measurement region, the image quality can be improved if the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. As the relative luminance, for example, the larger one of the first region 180814 and the second region 180815, the second region 180815 and the third region 180816, and the first region 180814 and the third region 180816, respectively. It can be the ratio of the smaller luminance to the luminance. That is, when the change amount of the typical luminance of the image with respect to the change of time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of the moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of the moving image can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of moving images can be improved, and power consumption and flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and flicker can be significantly reduced.

FIG. 72C illustrates an example of a method in which the luminance of the central region of the image is measured and the average value is used as the representative luminance of the image. The period Tin is the period of the input image data, the image 180821 is the pth image, the image 180822 is the (p + 1) th image, the image 180823 is the (p + 2) image, and the first region 180824 is the luminance in the pth image 180821. The measurement area, the second area 180825 represents the luminance measurement area in the (p + 1) -th image 180822, and the third area 180826 represents the luminance measurement area in the (p + 2) -th image 180823, respectively.

By measuring the representative luminance of the image, it can be determined whether or not the display is pseudo-impulse type. For example, the luminance measured in the first region 180824 is L,
When the luminance measured in the second region 180825 is Lc, if Lc <L, the display can be said to be a pseudo impulse type. In such a case, it can be said that the quality of the moving image is improved.

It should be noted that in the luminance measurement region, the image quality can be improved if the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. As the relative luminance, for example, the larger one for each of the first region 180824 and the second region 180825, the second region 180825 and the third region 180826, and the first region 180824 and the third region 180826, respectively. It can be the ratio of the smaller luminance to the luminance. That is, when the change amount of the typical luminance of the image with respect to the change of time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of the moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of the moving image can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of moving images can be improved, and power consumption and flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and flicker can be significantly reduced.

FIG. 72D shows an example of a method in which the luminance of a plurality of points sampled from the entire image is measured and the average value is used as the representative luminance of the image. The period Tin is the cycle of the input image data,
An image 180831 is a pth image, an image 180832 is a (p + 1) th image, an image 1808
33 is the (p + 2) -th image, the first region 180834 is the luminance measurement region in the p-th image 180831, the second region 180835 is the luminance measurement region in the (p + 1) -th image 180832, and the third region 180836 is the first region. The luminance measurement regions in the (p + 2) image 180833 are respectively shown.

By measuring the representative luminance of the image, it can be determined whether or not the display is pseudo-impulse type. For example, if Lc is an average value in all regions of luminance measured in the first region 180834 and Lc is an average value in all regions of luminance measured in the second region 180835, Lc <L. In other words, it can be said that the display is a pseudo impulse type. In such a case, it can be said that the quality of the moving image is improved.

It should be noted that in the luminance measurement region, the image quality can be improved if the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. As the relative luminance, for example, the larger one for each of the first region 180834 and the second region 180835, the second region 180835 and the third region 180836, and the first region 180834 and the third region 180836. It can be the ratio of the smaller luminance to the luminance. That is, when the change amount of the typical luminance of the image with respect to the change of time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of the moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of the moving image can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of moving images can be improved, and power consumption and flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and flicker can be significantly reduced.

FIG. 72E is a diagram showing a measurement method in the luminance measurement region in the diagrams shown in FIGS. 72A to 72D. A region 180841 is a luminance measurement region of interest, and a point 180842 is a luminance measurement point in the region 180841. Since the measurement target range of a luminance measuring device with high temporal resolution may be small, when the region 180841 is large, the entire region is not measured, but the region 180841 is pointed as shown in FIG. The brightness of the region 180841 may be obtained by measuring at a plurality of points without unevenness in the shape, and calculating the average value.

When the image has a combination of the three primary colors R, G, and B, the measured luminance is R, G
, B may be combined, R and G combined, G and B combined, B and R combined, and each of R, G, B It may be brightness.

Next, a method of detecting the movement of the image included in the input image data and creating an intermediate state image,
A method for controlling the driving method according to the movement of the image included in the input image data will be described.

With reference to FIG. 73, an example of a method of detecting an image motion included in input image data and creating an intermediate state image will be described. FIG. 73A illustrates a case where the display frame rate is twice the input frame rate (conversion ratio is 2). FIG. 73A schematically shows a method of detecting the motion of an image with the horizontal axis as time. The period Tin is the cycle of the input image data, the image 180901 is the pth image, and the image 180902 is the (p + 1) th
And image 180903 represent the (p + 2) -th image, respectively. In the image, a first region 180904, a second region 180905, and a third region 180906 are provided as time-independent regions.

First, in the (p + 2) -th image 180903, the image is divided into a plurality of tile-shaped areas, and attention is paid to the image data in the third area 180906, which is one of the areas.

Next, in the p-th image 180901, attention is focused on a range larger than the third region 180906 centered on the third region 180906. Here, a range larger than the third region 180906 centering on the third region 180906 is a data search range. The data search range is 180907 for the range in the horizontal direction (X direction) and 1809 for the range in the vertical direction (Y direction).
08. Note that the horizontal range 180907 and the vertical range 180908 of the data search range may be ranges in which the horizontal range and the vertical range of the third region 180906 are respectively expanded by about 15 pixels.

Then, an area having image data most similar to the image data in the third area 180906 is searched within the data search range. As a search method, a least square method or the like can be used. As a result of the search, the first region 18090 is the region having the most similar image data.
Suppose that 4 is derived.

Next, a vector 180909 is derived as an amount representing a difference in position between the derived first region 180904 and the third region 180906. The vector 180909 is referred to as a motion vector.

In the (p + 1) th image 180902, the vector obtained from the motion vector 180909, the image data in the third region 180906 in the (p + 2) image 180903, and the first region in the pth image 180901 are displayed. A second region 180905 is formed based on the image data in 180904.

Here, a vector obtained from the motion vector 180909 is referred to as a displacement vector 180910. The displacement vector 180910 has a role of determining a position where the second region 180905 is formed. The second region 180905 is formed at a position separated from the third region 180906 by a displacement vector 180910. The displacement vector 180910 may be an amount obtained by multiplying the motion vector 180909 by a coefficient (1/2).

The image data in the second area 180905 in the (p + 1) -th image 180902 is the same as the image data in the third area 180906 in the (p + 2) -th image 180903, and the p-th image.
The image data in the first area 180904 in the image 180901 may be determined. For example, the second region 1809 in the (p + 1) th image 180902
The image data in 05 is the third region 18090 in the (p + 2) -th image 180903.
6 and the average value of the image data in the first area 180904 in the p-th image 180901.

In this way, the second region 180905 in the (p + 1) th image 180902 corresponding to the third region 180906 in the (p + 2) th image 180903 can be formed. It should be noted that the above processing is also performed on other regions in the (p + 2) -th image 180903, so that the (p + 1) -th image 180902 is in an intermediate state between the (p + 2) -th image 180903 and the p-th image 180901. Can be formed.

FIG. 73B shows the case where the display frame rate is three times the input frame rate (conversion ratio is 3). FIG. 73B schematically shows a method of detecting the motion of an image with the horizontal axis as time. The period Tin is the cycle of the input image data, and the image 1809
11 is the p-th image, image 180912 is the (p + 1) -th image, and image 180913 is the (p-th) image.
The (+2) image and the image 180914 represent the (p + 3) th image, respectively. Also,
The first area 180915 and the second area 1809 are areas that do not depend on time in the image.
16, a third area 180917 and a fourth area 180918 are provided.

First, in the (p + 3) -th image 180914, the image is divided into a plurality of tile-shaped areas, and attention is paid to the image data in the fourth area 180918 which is one of the areas.

Next, in the p-th image 180911, attention is focused on a range larger than the fourth region 180918 centered on the fourth region 180918. Here, a range larger than the fourth area 180918 around the fourth area 180918 is a data search range. The data search range is 180919 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
20 Note that the horizontal range 180919 and the vertical range 180920 of the data search range may be ranges obtained by enlarging the horizontal range and the vertical range of the fourth region 180918 by about 15 pixels, respectively.

Then, an area having image data most similar to the image data in the fourth area 180918 is searched within the data search range. As a search method, a least square method or the like can be used. As a result of the search, the first region 18091 is the region having the most similar image data.
Suppose that 5 is derived.

Next, a vector is derived as an amount representing a difference in position between the derived first region 180915 and the fourth region 180918. Note that this vector is referred to as motion vector 180921.
I will call it.

Then, in the (p + 1) th image 180912 and the (p + 2) th image 180913, the first vector and the second vector obtained from the motion vector 180921,
Based on the image data in the fourth area 180918 in the (p + 3) -th image 180914 and the image data in the first area 180915 in the p-th image 180911, the second area 180916 and the third area 180913 are Form.

Here, the first vector obtained from the motion vector 180921 is the first displacement vector 18.
It will be called 0922. The second vector is referred to as a second displacement vector 180923. The first displacement vector 180922 has a role of determining a position where the second region 180916 is formed. The second region 180916 is formed at a position separated from the fourth region 180918 by the first displacement vector 180922. Note that the first displacement vector 180922 may be an amount obtained by multiplying the motion vector 180921 by (1/3). In addition, the second displacement vector 180923 has a role of determining a position where the third region 180917 is formed. The third region 1800917 is formed at a position separated from the fourth region 180918 by the second displacement vector 180923. The second displacement vector 180923
May be an amount obtained by multiplying the motion vector 180921 by (2/3).

The image data in the second area 180916 in the (p + 1) -th image 180912 includes the image data in the fourth area 180918 in the (p + 3) -th image 180914, and the p-th image data.
It may be determined by the image data in the first region 180915 in the image 180911. For example, the second region 1809 in the (p + 1) th image 180912
16 is the fourth area 18091 in the (p + 3) -th image 180914.
8 and the average value of the image data in the first region 180915 in the p-th image 180911.

The image data in the third area 180913 in the (p + 2) -th image 180913 includes the image data in the fourth area 180918 in the (p + 3) -th image 180914 and the p-th image.
It may be determined by the image data in the first region 180915 in the image 180911. For example, the third region 1809 in the (p + 2) -th image 180913
The image data in 17 is the fourth area 18091 in the (p + 3) -th image 180914.
8 and the average value of the image data in the first region 180915 in the p-th image 180911.

In this way, the second region 180916 in the (p + 1) th image 180902 corresponding to the fourth region 180918 in the (p + 3) th image 180914, and the (
A third region 180917 in the image 180913 of p + 2) can be formed.
The above processing is also performed on other regions in the (p + 3) -th image 180914, so that an intermediate state between the (p + 3) -th image 180914 and the p-th image 180911 is obtained.
A (p + 1) th image 180912 and a (p + 2) th image 180913 can be formed.

Next, an example of a circuit that detects the movement of an image included in input image data and creates an image in an intermediate state will be described with reference to FIG. FIG. 74A shows a connection relationship between a peripheral driver circuit including a source driver and a gate driver for displaying an image in a display area, and a control circuit for controlling the peripheral driver circuit. FIG. 74B is a diagram showing an example of a detailed circuit configuration of the control circuit. FIG. 74C is a diagram showing an example of a detailed circuit configuration of the image processing circuit included in the control circuit. FIG. 74D is a diagram showing another example of a detailed circuit configuration of the image processing circuit included in the control circuit.

As shown in FIG. 74A, the device in this embodiment may include a control circuit 181101, a source driver 181012, a gate driver 181013, and a display region 181014.

Note that the control circuit 181011, the source driver 181012, and the gate driver 181
013 may be formed on the same substrate as the substrate on which the display region 181014 is formed.

Note that the control circuit 181011, the source driver 181012, and the gate driver 181
013 is partly formed on the same substrate as the substrate on which the display region 181014 is formed, and other circuits are formed on a substrate different from the substrate on which the display region 181014 is formed. It may be. For example, the source driver 181012 and the gate driver 181013 may be formed over the same substrate as the substrate over which the display region 181014 is formed, and the control circuit 181101 may be formed as an external IC over a different substrate. Similarly, the gate driver 181013 may be formed over the same substrate as the substrate over which the display region 181014 is formed, and other circuits may be formed as external ICs over different substrates. Similarly, part of the source driver 181012, the gate driver 181013, and the control circuit 181101 is formed over the same substrate as the substrate over which the display region 181014 is formed, and the other circuits are formed as external ICs over different substrates. May be.

The control circuit 181101 includes an external image signal 181000, a horizontal synchronization signal 181001,
The vertical synchronization signal 181002 is input, the image signal 181003, the source start pulse 181004, the source clock 181005, and the gate start pulse 18100.
6 and the gate clock 181007 may be output.

The source driver 181012, the image signal 181003 and the source start pulse 181
004 and the source clock 181005 may be input, and a voltage or current in accordance with the image signal 181003 may be output to the display area 181014.

The gate driver 181013 may have a configuration in which a gate start pulse 181006 and a gate clock 181007 are input, and a signal that specifies a timing for writing a signal output from the source driver 181012 in the display region 181014 is output.

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the signals for controlling the timing for driving the source driver 181012 and the gate driver 181013 are also input to the horizontal synchronization signal 181001 and the vertical synchronization signal 1810.
It will have a frequency different from 02. Therefore, in addition to the processing of the image signal 181003, it is necessary to process a signal for controlling the timing for driving the source driver 181012 and the gate driver 181013. The control circuit 181101 may be a circuit having a function for that purpose. For example, when the frequency of the image signal 181003 is twice the frequency of the external image signal 181000, the control circuit 181011 may
An image signal included in 1000 is interpolated to generate an image signal 181003 having a double frequency, and a signal for timing control is also controlled to be a double frequency.

The control circuit 181101 includes an image processing circuit 181015 as shown in FIG.
And a timing generation circuit 181016.

The image processing circuit 181015 includes an external image signal 181000 and a frequency control signal 18100.
8 may be input and the image signal 181003 may be output.

The timing generation circuit 181016 includes a horizontal synchronization signal 181001 and a vertical synchronization signal 181.
002, a source start pulse 181004, and a source clock 1810
05, a gate start pulse 181006, a gate clock 181007, and a frequency control signal 181008 may be output. Note that the timing generation circuit 181016 may include a memory or a register that holds data for designating the state of the frequency control signal 181008. In addition, the timing generation circuit 181016 may be configured to receive a signal that specifies the state of the frequency control signal 181008 from the outside.

As shown in FIG. 74C, the image processing circuit 181015 includes a motion detection circuit 181020, a first memory 181021, a second memory 181022, a third memory 181023, a luminance control circuit 181024, and a high-speed processing. And a circuit 181025.

The motion detection circuit 181020 may be configured to receive a plurality of image data, detect a motion of the image, and output image data that is an intermediate state of the plurality of image data.

The first memory 181021 receives the external image signal 181000 and holds the external image signal 181000 for a certain period, while the motion detection circuit 181020 and the second memory 1810 are held.
22 may be configured to output the external image signal 181000.

The second memory 181022 receives the image data output from the first memory 181021, and outputs the image data to the motion detection circuit 181020 and the high-speed processing circuit 181025 while holding the image data for a certain period. There may be.

The third memory 181023 may be configured to receive the image data output from the motion detection circuit 181020 and output the image data to the luminance control circuit 181024 while holding the image data for a certain period.

The high-speed processing circuit 181025 includes image data output from the second memory 181022,
The image data output from the luminance control circuit 181024 and the frequency control signal 181008 may be input, and the image data may be output as the image signal 181003.

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the image signal included in the external image signal 181000 may be interpolated by the image processing circuit 181015 to generate the image signal 181003. Input external image signal 18100
0 is once held in the first memory 181021. At that time, the second memory 18102
2 holds image data input in the previous frame. Motion detection circuit 18
1020 appropriately reads the image data held in the first memory 181021 and the second memory 181022, detects a motion vector from the difference between the two image data,
Intermediate state image data may be generated. The generated intermediate state image data is held by the third memory 181023.

When the motion detection circuit 181020 is generating intermediate state image data, the high speed processing circuit 1
81025 converts the image data held in the second memory 181022 into the image signal 18.
1003 is output. Thereafter, the image data held in the third memory 181023 is output as the image signal 181003 through the luminance control circuit 181024. At this time, the frequency at which the second memory 181022 and the third memory 181023 are updated is the same as the frequency of the external image signal 181000, but the frequency of the image signal 181003 output through the high-speed processing circuit 181025 is the same as that of the external image signal 181000. It may be different from the frequency. Specifically, for example, the frequency of the image signal 181003 is the external image signal 181000.
1.5 times, 2 times, and 3 times the frequency. However, the present invention is not limited to this, and various frequencies can be used. Note that the frequency of the image signal 181003 may be specified by the frequency control signal 181008.

The configuration of the image processing circuit 181015 illustrated in FIG. 74D is obtained by adding a fourth memory 181026 to the configuration of the image processing circuit 181015 illustrated in FIG. In this way, the image data output from the first memory 181021 and the second memory 181022
In addition to the image data output from, the image data output from the fourth memory 181026 is also output to the motion detection circuit 181020, so that the motion of the image can be accurately detected.

If the input image data already contains a motion vector for data compression or the like, for example, MPEG (Moving Picture Expert Gr
In the case of image data based on the (up) standard, an intermediate state image may be generated as an interpolated image using the image data. At this time, a part for generating a motion vector included in the motion detection circuit 181020 is not necessary. In addition, since the encoding and decoding processes related to the image signal 181003 are simplified, power consumption can be reduced.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 6)
In the present embodiment, the peripheral portion of the liquid crystal panel will be described.

FIG. 75 shows a backlight unit 20101 called an edge light type and the liquid crystal panel 2
An example of a liquid crystal display device having 0107 is shown. The edge light type is a method in which a light source is arranged at the end of the backlight unit and the fluorescence of the light source is emitted from the entire light emitting surface.
The edge-light type backlight unit is thin and can save power.

The backlight unit 20101 includes a diffusion plate 20102, a light guide plate 20103, and a reflection plate 20.
104, a lamp reflector 20105 and a light source 20106.

The light source 20106 has a function of emitting light as necessary. For example, as the light source 20106, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20105 has a function of efficiently guiding the fluorescence from the light source 20106 to the light guide plate 20103. The light guide plate 20103 has a function of totally reflecting fluorescence and guiding light to the entire surface. The diffuser plate 20102 has a function of reducing unevenness in brightness. The reflector 20104 is
It has a function of reflecting and reusing light leaked downward from the light guide plate 20103 (the direction opposite to the liquid crystal panel 20107).

Note that a control circuit for adjusting the luminance of the light source 20106 is connected to the backlight unit 20101. With this control circuit, the luminance of the light source 20106 can be adjusted.

FIGS. 76A, 76B, 76C and 76D are diagrams showing a detailed configuration of an edge light type backlight unit. Note that description of the diffusion plate, the light guide plate, and the reflection plate is omitted.

A backlight unit 20201 illustrated in FIG. 76A has a cold cathode tube 20203 as a light source.
It is the structure using. And in order to reflect the light from the cold cathode tube 20203 efficiently,
A ramp reflector 20202 is provided. Such a configuration is often used for a large display device because of the intensity of luminance from the cold cathode fluorescent lamp.

A backlight unit 20211 illustrated in FIG. 76B includes a light-emitting diode (L
ED) 20213 is used. For example, white light emitting diode (LED)
20213 are arranged at a predetermined interval. In order to efficiently reflect light from the light emitting diode (LED) 20213, a lamp reflector 20212 is provided.

Since the luminance of the light emitting diode is high, a structure using the light emitting diode is suitable for a large display device. Since the light emitting diode is excellent in color reproducibility, an image closer to the real object can be displayed. Since the LED has a small chip, the arrangement area can be reduced. Therefore, it is possible to reduce the frame of the display device.

Note that in the case where the light-emitting diode is mounted on a large display device, the light-emitting diode can be disposed on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

A backlight unit 20221 illustrated in FIG. 76C includes a light-emitting diode (LED) 20223, a light-emitting diode (LED) 20224, and a light-emitting diode (LED) 20225 for each color RGB as a light source. RGB light-emitting diodes (LEDs) 20
223, the light emitting diode (LED) 20224, and the light emitting diode (LED) 20225 are arranged at predetermined intervals. Light emitting diode (LED) 20223 for each color RGB
By using the light emitting diode (LED) 20224 and the light emitting diode (LED) 20225, color reproducibility can be improved. A lamp reflector 20222 is provided to efficiently reflect light from the light emitting diode.

Since the luminance of the light emitting diode is high, a configuration using light emitting diodes of each color RGB as a light source is suitable for a large display device. Since the light emitting diode is excellent in color reproducibility, an image closer to the real object can be displayed. Since the LED has a small chip, the arrangement area can be reduced.
Therefore, it is possible to reduce the frame of the display device.

Note that color display can be performed by sequentially lighting the RGB light emitting diodes according to time. This is the so-called field sequential mode.

In addition, the light emitting diode which emits white, and the light emitting diode (LED) 2022 of each color RGB
3. A light emitting diode (LED) 20224 and a light emitting diode (LED) 20225 can be combined.

Note that in the case where the light-emitting diode is mounted on a large display device, the light-emitting diode can be disposed on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

A backlight unit 20231 illustrated in FIG. 77D includes a light-emitting diode (LED) 20233, a light-emitting diode (LED) 20234, and a light-emitting diode (LED) 20235 for each color RGB as a light source. For example, each color RGB light emitting diode (LE
D) 20233, light emitting diode (LED) 20234, light emitting diode (LED) 20
A plurality of colors (for example, green) having low emission intensity among 235 are arranged. By using the light emitting diode (LED) 20233, the light emitting diode (LED) 20234, and the light emitting diode (LED) 20235 for each color RGB, color reproducibility can be improved. A lamp reflector 20232 is provided to efficiently reflect light from the light emitting diode.

Since the luminance of the light emitting diode is high, a configuration using light emitting diodes of each color RGB as a light source is suitable for a large display device. Since the light emitting diode is excellent in color reproducibility, an image closer to the real object can be displayed. Since the LED has a small chip, the arrangement area can be reduced.
Therefore, it is possible to reduce the frame of the display device.

Note that color display can be performed by sequentially lighting the RGB light emitting diodes according to time. This is the so-called field sequential mode.

In addition, the light emitting diode which emits white, and the light emitting diode (LED) 2023 of each color RGB
3. A light emitting diode (LED) 20234 and a light emitting diode (LED) 20235 can be combined.

Note that in the case where the light-emitting diode is mounted on a large display device, the light-emitting diode can be disposed on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

FIG. 79A illustrates an example of a liquid crystal display device including a backlight unit called a direct type and a liquid crystal panel. The direct type is a method in which a light source is arranged directly under a light emitting surface to emit fluorescence of the light source from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20500 includes a diffusion plate 20501, a light shielding plate 20502, a lamp reflector 20503, and a light source 20504.

Light emitted from the light source 20504 is collected on one surface of the backlight unit 20500 by the lamp reflector 20503. That is, the backlight unit 2050
0 has a surface that emits light strongly and a surface that emits little light. At this time, the liquid crystal panel 20505 is arranged on the side of the backlight unit 20500 that strongly emits light, whereby the light emitted from the light source 20504 can be efficiently applied to the liquid crystal panel 20505.

The light source 20504 has a function of emitting light as necessary. For example, as the light source 20504, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20503 has a function of efficiently guiding the fluorescence of the light source 20504 to the diffusion plate 20501 and the light shielding plate 20502. The light shielding plate 20502 has a function of reducing unevenness in brightness by increasing the light shielding as the light is stronger in accordance with the arrangement of the light sources 20504. The diffusion plate 20501 further has a function of reducing brightness unevenness.

Note that a control circuit for adjusting the luminance of the light source 20504 is connected to the backlight unit 20500. With this control circuit, the luminance of the light source 20504 can be adjusted.

FIG. 79B illustrates an example of a liquid crystal display device including a backlight unit called a direct type and a liquid crystal panel. The direct type is a method in which a light source is arranged directly under a light emitting surface to emit fluorescence of the light source from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20510 includes a diffusion plate 20511, a light shielding plate 20512, a lamp reflector 20513, RGB light sources (R) 20514a, light sources (G) 20514b, and light sources (B) 20514c.

Light emitted from the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c is collected on one surface of the backlight unit 20510 by the lamp reflector 20513. That is, the backlight unit 20510 has a surface that emits light strongly and a surface that emits little light. At this time, the backlight unit 20510
By disposing the liquid crystal panel 20515 on the side that strongly emits light, the light source (R) 205
14a, the light source (G) 20514b, and the light emitted from the light source (B) 20514c can be efficiently applied to the liquid crystal panel 20515.

Light source (R) 20514a, light source (G) 20514b, and light source (B) 2051 for each color RGB
4c has a function of emitting light as necessary. For example, a light source (R) 20514a, a light source (
As the G) 20514b and the light source (B) 20514c, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20513 has a function of efficiently guiding the fluorescence of the light source 20514 to the diffusion plate 20511 and the light shielding plate 20512. The light-shielding plate 20512 has a function of reducing unevenness in brightness by increasing the light-shielding as the light is stronger in accordance with the arrangement of the light sources 20514. The diffusion plate 20511 further has a function of reducing brightness unevenness.

Note that a control circuit for adjusting the luminance of the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c of each color RGB is connected to the backlight unit 20510. By this control circuit, each color RGB light source (R) 20514a, light source (G
) 20514b and the light source (B) 20514c can be adjusted.

FIG. 77 is a diagram illustrating an example of a configuration of a polarizing plate (also referred to as a polarizing film).

Polarizing film 20300 is protective film 20301, substrate film 20302, PVA
A polarizing film 20303, a substrate film 20304, an adhesive layer 20305, and a release film 20306 are included.

The PVA polarizing film 20303 has a function of generating light only in a certain vibration direction (linearly polarized light). Specifically, the PVA polarizing film 20303 includes molecules (polarizers) whose electron densities are greatly different from each other vertically and horizontally. The PVA polarizing film 20303 can produce linearly polarized light by aligning the directions of molecules in which the electron density is greatly different in the vertical and horizontal directions.

As an example, the PVA polarizing film 20303 is made of polyvinyl alcohol (Poly V).
Inyl Alcohol) is doped with an iodine compound, and the PVA film is pulled in a certain direction, whereby a film in which iodine molecules are arranged in a certain direction can be obtained. And the light parallel to the long axis of an iodine molecule is absorbed by the iodine molecule. In addition, a dichroic dye may be used instead of iodine for high durability use and high heat resistance use. The dye is preferably used in a liquid crystal display device that requires durability and heat resistance, such as an in-vehicle LCD or a projector LCD.

The PVA polarizing film 20303 is a film (substrate film 20302 that serves as a base material on both sides).
And the substrate film 20304), the reliability can be increased. PVA
The polarizing film 20303 may be sandwiched between highly transparent and highly durable triacetylrose (TAC) films. In addition, a board | substrate film and a TAC film function as a protective layer of the polarizer which the PVA polarizing film 20303 has.

One substrate film (substrate film 20304) has an adhesive layer 20305 attached to a glass substrate of a liquid crystal panel. Note that the adhesive layer 20305 is formed by applying an adhesive to a substrate film (substrate film 20304) on one side. Adhesive layer 203
In 05, a release film 20306 (separate film) is provided.

The other substrate film (substrate film 20302) is provided with a protective film 20301.

Note that a hard coat scattering layer (anti-glare layer) may be provided on the surface of the polarizing film 20300. The hard coat scattering layer has fine irregularities formed on the surface by AG treatment, and has an antiglare function for scattering external light, so that reflection of external light on the liquid crystal panel can be prevented. Surface reflection can be prevented.

Note that a plurality of optical thin film layers having different refractive indexes may be formed on the surface of the polarizing film 20300 (also referred to as anti-reflection treatment or AR treatment). The multilayered optical thin film layer having a plurality of refractive indexes can reduce the reflectance of the surface due to the light interference effect.

FIG. 78 is a diagram illustrating an example of a system block of the liquid crystal display device.

In the pixel portion 20405, a signal line 20412 is extended from the signal line driver circuit 20403. In the pixel portion 20405, a scanning line 20410 is extended from the scanning line driver circuit 20404. A plurality of pixels are arranged in a matrix in the intersection region between the signal line 20412 and the scanning line 20410. Note that each of the plurality of pixels has a switching element. Therefore, a voltage for controlling the tilt of the liquid crystal molecules can be independently input to each of the plurality of pixels. A structure in which switching elements are provided in each intersection region in this way is called an active type. However, it is not limited to such an active type, and may be a passive type configuration. Since the passive type has no switching element in each pixel, the process is simple.

The driver circuit portion 20408 includes a control circuit 20402, a signal line driver circuit 20403, and a scan line driver circuit 20404. A video signal 20401 is input to the control circuit 20402. In response to the video signal 20401, the control circuit 20402 receives a signal line driver circuit 2040.
3 and the scanning line driving circuit 20404 are controlled. Therefore, the video signal 20401 is input to the signal line driver circuit 20403 and the scan line driver circuit 20404, respectively. In response to this control signal, the signal line driver circuit 20403 sends the video signal to the signal line 2041.
2, the scan line driver circuit 20404 inputs a scan signal to the scan line 20410. Then, a switching element included in the pixel is selected according to the scanning signal, and a video signal is input to the pixel electrode of the pixel.

Note that the control circuit 20402 also controls the power supply 20407 in accordance with the video signal 20401. The power supply 20407 has means for supplying power to the lighting means 20406. As the lighting unit 20406, an edge light type backlight unit or a direct type backlight unit can be used. However, a front light may be used as the illumination means 20406. The front light is a plate-like light unit that is mounted on the front side of the pixel portion and is configured by a light emitter and a light guide that illuminate the whole. By such illumination means,
The pixel portion can be illuminated uniformly with low power consumption.

As illustrated in FIG. 78B, the scan line driver circuit 20404 includes circuits functioning as a shift register 20441, a level shifter 20442, and a buffer 20443. Signals such as a gate start pulse (GSP) and a gate clock signal (GCK) are input to the shift register 20441.

As shown in FIG. 78C, the signal line driver circuit 20403 includes a shift register 20431, a first latch 20432, a second latch 20433, a level shifter 20434, and a buffer 2.
A circuit functioning as 0435 is included. The circuit functioning as the buffer 20435 is a circuit having a function of amplifying a weak signal and includes an operational amplifier and the like. Level shifter 20
A signal such as a start pulse (SSP) is input to 434, and data (DATA) such as a video signal is input to the first latch 20432. The second latch 20433 has a latch (LAT
) Signals can be temporarily stored and input to the pixel portion 20405 all at once. This is called line sequential driving. Therefore, the second latch can be omitted if the pixel performs dot sequential driving instead of line sequential driving.

Note that in this embodiment, a known liquid crystal panel can be used. For example, a configuration in which a liquid crystal layer is sealed between two substrates can be used as the liquid crystal panel.
On one substrate, a transistor, a capacitor, a pixel electrode, an alignment film, or the like is formed. Note that a polarizing plate, a retardation plate, or a prism sheet may be disposed on the side opposite to the upper surface of one of the substrates. On the other substrate, a color filter, a black matrix, a counter electrode, an alignment film, or the like is formed. Note that a polarizing plate or a retardation plate may be disposed on the side opposite to the upper surface of the other substrate. Note that the color filter and the black matrix may be formed on the upper surface of one of the substrates. In addition, a slit (on the upper surface side of one substrate or the opposite side (
By arranging (grid), three-dimensional display can be performed.

In addition, it is possible to arrange | position a polarizing plate, a phase difference plate, and a prism sheet between two board | substrates, respectively. Alternatively, it can be integrated with either of the two substrates.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 7)
In this embodiment, a structure and operation of a pixel which can be applied to a liquid crystal display device will be described.

In this embodiment, TN (Twisted Nem) is used as the operation mode of the liquid crystal.
atic) mode, IPS (In-Plane-Switching) mode, FFS (
Fringe Field Switching (MVA) mode, MVA (Multi-dom)
ain Vertical Alignment) mode, PVA (Patterned)
Vertical Alignment), ASM (Axial Symmetric)
ic aligned Micro-cell) mode, OCB (Optical Co)
mpensated birefringence) mode, FLC (Ferroele)
cttric Liquid Crystal) mode, AFLC (Anti Ferroe)
electric Liquid Crystal) or the like can be used.

FIG. 131A illustrates an example of a pixel structure which can be applied to the liquid crystal display device.

A pixel 40100 includes a transistor 40101, a liquid crystal element 40102, and a capacitor 4010.
3. A gate of the transistor 40101 is connected to the wiring 40105.
A first terminal of the transistor 40101 is connected to the wiring 40104. Transistor 4
The second terminal of 0101 is connected to the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103. The second electrode of the liquid crystal element 40102 corresponds to the counter electrode 40107. A second electrode of the capacitor 40103 is connected to the wiring 40106.

The wiring 40104 functions as a signal line. The wiring 40105 functions as a scanning line. The wiring 40106 functions as a capacitor line. The transistor 40101 functions as a switch. The capacitor 40103 functions as a storage capacitor.

The transistor 40101 only needs to function as a switch. The polarity of the transistor 40101 may be a P-channel type or an N-channel type.

Note that a video signal is input to the wiring 40104. A scan signal is input to the wiring 40105. A certain potential is supplied to the wiring 40106. The scanning signal is an H level or L level digital voltage signal. In the case where the transistor 40101 is an n-channel transistor, the H level of the scanning signal is a potential at which the transistor 40101 can be turned on, and the L level of the scanning signal is a potential at which the transistor 40101 can be turned off. Alternatively, transistor 4
When 0101 is a P-channel type, the H level of the scanning signal is a potential at which the transistor 40101 can be turned off, and the L level of the scanning signal is a potential at which the transistor 40101 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be a current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Note that the constant potential supplied to the wiring 40106 is preferably equal to the potential of the counter electrode 40107.

The operation of the pixel 40100 will be described separately for the case where the transistor 40101 is on and the case where the transistor 40101 is off.

In the case where the transistor 40101 is on, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) and the first electrode of the capacitor 40103 are electrically connected. Accordingly, the video signal is input from the wiring 40104 to the first electrode (pixel electrode) of the liquid crystal element 40102 and the first electrode of the capacitor 40103 through the transistor 40101.
The capacitor 40103 holds a potential difference between the video signal and the potential supplied to the wiring 40106.

In the case where the transistor 40101 is off, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) and the first electrode of the capacitor 40103 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 are in a floating state. Since the capacitor 40103 holds a potential difference between the video signal and the potential supplied to the wiring 40106, the first electrode of the liquid crystal element 40102 and the first of the capacitor 40103 are used.
The electrode maintains the same (corresponding) potential as the video signal. Note that the liquid crystal element 40102 includes:
The transmittance corresponds to the video signal.

FIG. 131B illustrates an example of a pixel structure which can be applied to the liquid crystal display device. In particular, FIG. 131B illustrates an example of a pixel structure which can be applied to a liquid crystal display device suitable for a horizontal electric field mode (including an IPS mode and an FFS mode).

The pixel 40110 includes a transistor 40111, a liquid crystal element 40112, and a capacitor 4011.
3. A gate of the transistor 40111 is connected to the wiring 40115.
A first terminal of the transistor 40111 is connected to the wiring 40114. Transistor 4
The second terminal of 0111 is connected to the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113. A second electrode of the liquid crystal element 40112 is connected to the wiring 40116. A second electrode of the capacitor 40113 is connected to the wiring 40116.

The wiring 40114 functions as a signal line. The wiring 40115 functions as a scan line. The wiring 40116 functions as a capacitor line. The transistor 40111 functions as a switch. The capacitor 40113 functions as a storage capacitor.

The transistor 40111 only needs to function as a switch. The polarity of the transistor 40111 may be a P-channel type or an N-channel type.

Note that a video signal is input to the wiring 40114. A scan signal is input to the wiring 40115. A certain potential is supplied to the wiring 40116. The scanning signal is an H level or L level digital voltage signal. In the case where the transistor 40111 is an n-channel transistor, the H level of the scanning signal is a potential at which the transistor 40111 can be turned on, and the L level of the scanning signal is a potential at which the transistor 40111 can be turned off. Alternatively, transistor 4
When 0111 is a P-channel type, the H level of the scanning signal is a potential at which the transistor 40111 can be turned off, and the L level of the scanning signal is a potential at which the transistor 40111 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be a current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40110 will be described separately for the case where the transistor 40111 is on and the case where the transistor 40111 is off.

In the case where the transistor 40111 is on, the wiring 40114 and the liquid crystal element 40112
The first electrode (pixel electrode) and the first electrode of the capacitor 40113 are electrically connected. Therefore, the video signal is input from the wiring 40114 to the first electrode (pixel electrode) of the liquid crystal element 40112 and the first electrode of the capacitor 40113 through the transistor 40111.
The capacitor 40113 holds a potential difference between the video signal and the potential supplied to the wiring 40116.

In the case where the transistor 40111 is off, the wiring 40114 and the liquid crystal element 40112
The first electrode (pixel electrode) and the first electrode of the capacitor 40113 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113 are in a floating state. Since the capacitor 40113 holds a potential difference between the video signal and the potential supplied to the wiring 40116, the first electrode of the liquid crystal element 40112 and the first of the capacitor 40113 are used.
The electrode maintains the same (corresponding) potential as the video signal. Note that the liquid crystal element 40112 includes
The transmittance corresponds to the video signal.

FIG. 132 is a diagram illustrating an example of a pixel structure which can be applied to the liquid crystal display device. In particular, FIG.
Is an example of a pixel configuration that can increase the aperture ratio of the pixel by reducing the number of wirings.

FIG. 132 shows two pixels (pixel 40200 and pixel 40210) arranged in the same column direction.
Indicates. For example, when the pixel 40200 is arranged in the Nth row, the pixel 40210 is N +
Arranged in the first row.

The pixel 40200 includes a transistor 40201, a liquid crystal element 40202, and a capacitor 4020.
3. A gate of the transistor 40201 is connected to the wiring 40205.
A first terminal of the transistor 40201 is connected to the wiring 40204. Transistor 4
A second terminal 0201 is connected to the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203. The second electrode of the liquid crystal element 40202 corresponds to the counter electrode 40207. A second electrode of the capacitor 40203 is connected to the same wiring as the gate of the transistor in the previous row.

A pixel 40210 includes a transistor 40211, a liquid crystal element 40212, and a capacitor 4021.
3. A gate of the transistor 40211 is connected to the wiring 40215.
A first terminal of the transistor 40211 is connected to the wiring 40204. Transistor 4
The second terminal of 0211 is connected to the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213. A second electrode of the liquid crystal element 40212 corresponds to the counter electrode 40217. The second electrode of the capacitor 40213 has the same wiring (wiring 40205) as the gate of the transistor in the previous row.
It is connected to the.

The wiring 40204 functions as a signal line. The wiring 40205 functions as an N-th scanning line. The wiring 40206 functions as a capacitor line in the Nth row. The transistor 40201 functions as a switch. The capacitor 40203 functions as a storage capacitor.

The wiring 40214 functions as a signal line. The wiring 40215 functions as a scan line of the (N + 1) th row. The wiring 40216 functions as a capacitor line in the (N + 1) th row. Transistor 4021
1 functions as a switch. The capacitor 40213 functions as a storage capacitor.

The transistor 40201 and the transistor 40211 may function as switches,
The polarity of the transistor 40201 and the polarity of the transistor 40211 may be a P-channel type or an N-channel type.

Note that a video signal is input to the wiring 40204. The wiring 40205 has a scanning signal (
(Nth line) is input. A scanning signal (N + 1th row) is input to the wiring 40215.

The scanning signal is an H level or L level digital voltage signal. Transistor 40201 (
In the case where the transistor 40211) is an n-channel transistor, the H level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned on, and the L level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned off. Alternatively, in the case where the transistor 40201 (or the transistor 40211) is a P-channel type,
The H level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned off, and the L level of the scanning signal is the transistor 40201 (or the transistor 40211).
). The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be a current.
The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40200 will be described separately for the case where the transistor 40201 is on and the case where the transistor 40201 is off.

In the case where the transistor 40201 is on, the wiring 40204 and the liquid crystal element 40202
The first electrode (pixel electrode) and the first electrode of the capacitor 40203 are electrically connected. Accordingly, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40202 and the first electrode of the capacitor 40203 through the transistor 40201.
The capacitor 40203 holds a potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the previous row.

In the case where the transistor 40201 is off, the wiring 40204 and the liquid crystal element 40202 are displayed.
The first electrode (pixel electrode) and the first electrode of the capacitor 40203 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 are in a floating state. Since the capacitor 40203 holds a potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the previous row, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 Maintain the same (corresponding) potential as the signal. In addition,
The liquid crystal element 40202 has a transmittance corresponding to the video signal.

The operation of the pixel 40210 will be described separately for the case where the transistor 40211 is on and the case where the transistor 40211 is off.

In the case where the transistor 40211 is on, the wiring 40204 and the liquid crystal element 40212
The first electrode (pixel electrode) and the first electrode of the capacitor 40213 are electrically connected. Accordingly, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40212 and the first electrode of the capacitor 40213 through the transistor 40211.
The capacitor 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row.

In the case where the transistor 40211 is off, the wiring 40204 and the liquid crystal element 40212
The first electrode (pixel electrode) and the first electrode of the capacitor 40213 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213 are in a floating state. Since the capacitor 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row, the liquid crystal element 4021 is maintained.
The second first electrode and the first electrode of the capacitor 40213 maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40212 has transmittance in accordance with the video signal.

FIG. 133 is a diagram illustrating an example of a pixel structure which can be applied to the liquid crystal display device. In particular, FIG.
Is an example of a pixel configuration that can improve the viewing angle by using sub-pixels.

The pixel 40320 includes a sub-pixel 40300 and a sub-pixel 40310. Pixel 403
Although the case where 20 has two sub-pixels will be described, the pixel 40320 may have three or more sub-pixels.

The sub-pixel 40300 includes a transistor 40301, a liquid crystal element 40302, and a capacitor element 40.
303. A gate of the transistor 40301 is connected to the wiring 40305. A first terminal of the transistor 40301 is connected to the wiring 40304. A second terminal of the transistor 40301 is a first electrode of the liquid crystal element 40302 and a first terminal of the capacitor 40303.
Connected to the electrode. A second electrode of the liquid crystal element 40302 corresponds to the counter electrode 40307. A second electrode of the capacitor 40303 is connected to the wiring 40306.

The sub-pixel 40310 includes a transistor 40311, a liquid crystal element 40312, and a capacitor 40.
313. A gate of the transistor 40311 is connected to the wiring 40315. A first terminal of the transistor 40301 is connected to the wiring 40304. The second terminal of the transistor 40311 is a first electrode of the liquid crystal element 40312 and a first terminal of the capacitor 40313.
Connected to the electrode. A second electrode of the liquid crystal element 40312 corresponds to the counter electrode 40317. A second electrode of the capacitor 40313 is connected to the wiring 40306.

The wiring 40304 functions as a signal line. The wiring 40305 functions as a scanning line. The wiring 40315 functions as a signal line. The wiring 40306 functions as a capacitor line. The transistor 40301 functions as a switch. The transistor 40311 functions as a switch. The capacitor 40303 functions as a storage capacitor. The capacitor 40313 functions as a storage capacitor.

The transistor 40301 only needs to function as a switch. The polarity of the transistor 40301 may be a P-channel type or an N-channel type. The transistor 40311 only needs to function as a switch, and the transistor 40311 may have a P-channel polarity or N
It may be a channel type.

Note that a video signal is input to the wiring 40304. A scan signal is input to the wiring 40305. A scan signal is input to the wiring 40315. A certain potential is supplied to the wiring 40306.

The scanning signal is an H level or L level digital voltage signal. Transistor 403
When 01 (or the transistor 40311) is an N-channel type, the H level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned on, and the L level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off. . Alternatively, when the transistor 40301 (or the transistor 40311) is a p-channel transistor, the H level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off, and the L level of the scanning signal is the transistor 40301 (or the transistor 40).
311) is a potential that can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be a current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Wiring 4
The constant potential supplied to 0306 is the potential of the counter electrode 40307 or the counter electrode 4031.
It is preferable that the potential is equal to 7.

Regarding the operation of the pixel 40320, the transistor 40301 is turned on and the transistor 4031 is turned on.
1 is turned off, the transistor 40301 is turned off and the transistor 40311 is turned on, and the transistor 40301 and the transistor 40311 are turned off.

In the case where the transistor 40301 is on and the transistor 40311 is off, in the subpixel 40300, the wiring 40304 and the first electrode (pixel electrode) of the liquid crystal element 40302
And the first electrode of the capacitor 40303 is electrically connected. Accordingly, the video signal is input from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 through the transistor 40301. Then, the capacitive element 403
03 holds the potential difference between the video signal and the potential supplied to the wiring 40306. At this time, in the subpixel 40310, the wiring 40304 and the first electrode of the liquid crystal element 40312 (
The pixel electrode) and the first electrode of the capacitor 40313 are electrically disconnected. Accordingly, the video signal is not input to the sub-pixel 40310.

In the case where the transistor 40301 is off and the transistor 40311 is on, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 in the subpixel 40300. Is done. Therefore, the liquid crystal element 4
The first electrode of 0302 and the first electrode of the capacitor 40303 are in a floating state. Capacitance element 40
Since 303 holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 have the same (corresponding) potential as the video signal. maintain. At this time, in the sub-pixel 40310, the wiring 403
04 and the first electrode (pixel electrode) of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are electrically connected. Therefore, the video signal is supplied from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40312 and the capacitor 4031 through the transistor 40311.
3 is input to the first electrode. The capacitor 40313 includes a video signal and a wiring 40316.
The potential difference from the potential supplied to is maintained.

When the transistor 40301 and the transistor 40311 are off, the subpixel 4
At 0300, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303. Therefore, the liquid crystal element 4030
The second first electrode and the first electrode of the capacitor 40303 are in a floating state. Capacitance element 40303
Holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 are the same as the video signal (
(Corresponding) maintain the potential. Note that the liquid crystal element 40302 has a transmittance according to the video signal. At this time, in the sub pixel 40310, the wiring 40304, the first electrode (pixel electrode) of the liquid crystal element 40312, and the first electrode of the capacitor 40313 are electrically cut off. Accordingly, the first electrode of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are in a floating state. Since the capacitor 40313 holds a potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40312 and the capacitor 403
Thirteen first electrodes maintain the same (corresponding) potential as the video signal. The liquid crystal element 40
Reference numeral 312 denotes a transmittance corresponding to the video signal.

The video signal input to the sub-pixel 40300 may have a value different from the video signal input to the sub-pixel 40310. In this case, the alignment of the liquid crystal molecules of the liquid crystal element 40302 is changed to the liquid crystal element 4.
Since the orientation of the liquid crystal molecules can be different from that of 0312, the viewing angle can be widened.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 8)
In this embodiment, a method for driving a display device will be described. In particular, a method for driving a liquid crystal display device will be described.

A liquid crystal panel that can be used in the liquid crystal display device described in this embodiment has a structure in which a liquid crystal material is sandwiched between two substrates. Each of the two substrates includes an electrode for controlling an electric field applied to the liquid crystal material. A liquid crystal material is a material whose optical and electrical properties are changed by an electric field applied from the outside. Therefore, the liquid crystal panel
It is a device that can obtain desired optical and electrical properties by controlling a voltage applied to a liquid crystal material using an electrode of a substrate. A liquid crystal panel capable of displaying a fine image can be obtained by arranging a large number of electrodes side by side to form a pixel and individually controlling the voltage applied to the pixel.

Here, the response time of the liquid crystal material to the change in electric field is the distance between two substrates (cell gap).
Although it depends on the type of liquid crystal material, it is generally several milliseconds to several tens of milliseconds. Furthermore, when the change amount of the electric field is small, the response time of the liquid crystal material is further increased. This property causes obstacles in image display such as afterimages, tailing, and contrast reduction when displaying moving images on a liquid crystal panel, especially when changing from halftone to another halftone (change in electric field). Is small), the above-mentioned degree of failure becomes significant.

On the other hand, a problem peculiar to a liquid crystal panel using an active matrix is a change in write voltage due to constant charge driving. Hereinafter, constant charge driving in the present embodiment will be described.

A pixel circuit in the active matrix includes a switch for controlling writing and a capacitor for holding charge. The driving method of the pixel circuit in the active matrix is that the switch is turned on and a predetermined voltage is written in the pixel circuit, and then the switch is turned off and the charge in the pixel circuit is held (hold state). In the hold state, no charge is exchanged between the inside and outside of the pixel circuit (constant charge). Usually, the period in which the switch is off is several hundred times (the number of scanning lines) times longer than the period in which the switch is on. Therefore, it can be considered that the switch of the pixel circuit is almost off.
From the above, it is assumed that the constant charge driving in the present embodiment is a driving method in which the pixel circuit is in a hold state in most periods when the liquid crystal panel is driven.

Next, electrical characteristics of the liquid crystal material will be described. In the liquid crystal material, when the electric field applied from the outside changes, the optical properties change and the dielectric constant also changes. That is, when each pixel of the liquid crystal panel is considered as a capacitive element (liquid crystal element) sandwiched between two electrodes, the capacitive element is a capacitive element whose capacitance changes according to an applied voltage. This phenomenon is called dynamic capacitance.

As described above, when the capacitive element whose capacitance is changed by the applied voltage is driven by the above-described constant charge driving, the following problem occurs. That is, there is a problem that when the capacitance of the liquid crystal element changes in the hold state where no charge is transferred, the applied voltage also changes. This can be understood from the fact that the charge amount is constant in the relational expression (charge amount) = (capacitance) × (applied voltage).

For the above reasons, in the liquid crystal panel using the active matrix, the voltage in the hold state changes from the voltage in the writing state due to the constant charge driving. As a result, the transmittance of the liquid crystal element is different from the change in the driving method that does not take the hold state. This is shown in FIG. FIG. 83A shows a control example of the voltage written in the pixel circuit, with time on the horizontal axis and absolute value of voltage on the vertical axis. FIG. 83B illustrates a control example of the voltage written to the pixel circuit when the horizontal axis represents time and the vertical axis represents voltage. FIG. 83C shows time on the horizontal axis and the transmittance of the liquid crystal element on the vertical axis.
83 shows the change over time of the transmittance of the liquid crystal element when the voltage shown in FIG. 83A or FIG. 83B is written in the pixel circuit. 83A to 83C, a period F represents a voltage rewriting cycle, and the time at which the voltage is rewritten is set to t ₁ , t ₂ , t ₃ , t ₄ ,.
・ I will explain as.

Here, the write voltage corresponding to the image data input to the liquid crystal display device is | V ₁ | for rewriting at time 0, and | for rewriting at times t ₁ , t ₂ , t ₃ , t ₄ ,.
Assume that V ₂ |. (See FIG. 83 (A))

Note that the polarity of the writing voltage corresponding to the image data input to the liquid crystal display device may be periodically switched. (Inverted drive: see FIG. 83B) By this method, it is possible to prevent a direct current voltage from being applied to the liquid crystal as much as possible, so that burn-in due to deterioration of the liquid crystal element can be prevented. Note that the polarity switching period (inversion period) may be the same as the voltage rewriting period. In this case, since the inversion cycle is short, occurrence of flicker due to inversion driving can be reduced. Further, the inversion cycle may be a cycle that is an integral multiple of the voltage rewrite cycle. In this case, since the inversion period is long and the frequency of writing the voltage by changing the polarity can be reduced, the power consumption can be reduced.

FIG. 83C shows a change over time in the transmittance of the liquid crystal element when a voltage as shown in FIG. 83A or FIG. 83B is applied to the liquid crystal element. Here, the voltage | V ₁ is applied to the liquid crystal element.
| Is applied, the transmittance of the liquid crystal element after enough time passes corresponds to TR _1. Similarly, the transmissivity of the liquid crystal element after the voltage | V ₂ | is applied to the liquid crystal element and a sufficient time has elapsed is defined as TR ₂ . When the voltage applied to the liquid crystal element changes from | V ₁ | to | V ₂ | at time t ₁ , the transmittance of the liquid crystal element does not immediately become TR ₂ as indicated by a broken line 30401, It changes slowly. For example, the rewriting period of the voltage, when the same as the frame period of the image signal of 60 Hz (16.7 msec), until the transmittance is changed to TR _2, it is necessary to time of several frames.

However, the smooth transmittance change with time as indicated by a broken line 30401 is obtained when the voltage | V ₂ | is accurately applied to the liquid crystal element. In an actual liquid crystal panel, for example, a liquid crystal panel using an active matrix, the voltage in the hold state changes from the voltage in the writing state due to constant charge driving. Instead of the time change as shown in Fig. 5, instead of the time change as shown by the solid line 30401. This is because the voltage changes due to the constant charge driving, and the target voltage cannot be reached by one writing. As a result, the response time of the transmissivity of the liquid crystal element is apparently longer than the original response time (broken line 30401), and there are noticeable obstacles in image display such as afterimage, tailing, and contrast reduction. It will cause.

By using the overdrive drive, it is possible to simultaneously solve the phenomenon that the original response time of the liquid crystal element and the apparent response time due to insufficient writing due to dynamic capacitance and constant charge drive become even longer. This is shown in FIG. FIG. 84A shows a control example of the voltage written in the pixel circuit, with time on the horizontal axis and absolute value of voltage on the vertical axis. FIG. 84B illustrates a control example of the voltage written to the pixel circuit when the horizontal axis represents time and the vertical axis represents voltage. In FIG. 84C, time is plotted on the horizontal axis and the transmittance of the liquid crystal element is plotted on the vertical axis, and the voltage shown in FIG. 84A or 84B is written in the pixel circuit. It shows the change in transmittance over time. In FIGS. 84A to 84C, a period F represents a voltage rewriting cycle, and the time for voltage rewriting is described as t ₁ , t ₂ , t ₃ , t ₄ ,.

Here, the writing voltage corresponding to the image data input to the liquid crystal display device is | V ₁ | for rewriting at time 0, | V ₃ | for rewriting at time t ₁ , and times t ₂ , t ₃ , t.
₄ ,... Are assumed to be | V ₂ |. (Refer to FIG. 84 (A))

Note that the polarity of the writing voltage corresponding to the image data input to the liquid crystal display device may be periodically switched. (Inversion driving: see FIG. 84B) By this method, it is possible to prevent a direct current voltage from being applied to the liquid crystal as much as possible, so that burn-in or the like due to deterioration of the liquid crystal element can be prevented. Note that the polarity switching period (inversion period) may be the same as the voltage rewriting period. In this case, since the inversion cycle is short, occurrence of flicker due to inversion driving can be reduced. Further, the inversion cycle may be a cycle that is an integral multiple of the voltage rewrite cycle. In this case, since the inversion period is long and the frequency of writing the voltage by changing the polarity can be reduced, the power consumption can be reduced.

FIG. 84C shows a change over time in the transmittance of the liquid crystal element when a voltage as shown in FIG. 84A or 84B is applied to the liquid crystal element. Here, the voltage | V ₁ is applied to the liquid crystal element.
| Is applied, the transmittance of the liquid crystal element after enough time passes corresponds to TR _1. Similarly, the transmissivity of the liquid crystal element after the voltage | V ₂ | is applied to the liquid crystal element and a sufficient time has elapsed is defined as TR ₂ . Similarly, the voltage | V ₃ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient time has elapsed is defined as TR ₃ . At time t ₁ , the voltage applied to the liquid crystal element changes from | V ₁ | to | V
_When it changes to ₃ |, the transmittance of the liquid crystal element tends to change to TR ₃ over several frames as indicated by a broken line 30501. However, the voltage | _{V 3} | applied at the end at time _{t 2,} later than time _{t 2,} the voltage | _{V 2} | is applied. Therefore, the transmittance of the liquid crystal element is not as indicated by the broken line 30501 but as indicated by the solid line 30502. here,
It is preferable to set the value of the voltage | V ₃ | so that the transmittance is approximately TR ₂ at the time t ₂ . Here, the voltage | V ₃ | is also referred to as an overdrive voltage.

That is, by changing the overdrive voltage | V ₃ |, the response time of the liquid crystal element can be controlled to some extent. This is because the response time of the liquid crystal changes depending on the strength of the electric field. Specifically, the stronger the electric field, the shorter the response time of the liquid crystal element, and the weaker the electric field, the longer the response time of the liquid crystal element.

The overdrive voltage | V ₃ | is preferably changed according to the amount of voltage change, that is, the voltages | V ₁ | and | V ₂ | that give the desired transmittances TR ₁ and TR _2. . This is because even if the response time of the liquid crystal element changes depending on the amount of change in voltage, the optimum response time can always be obtained by changing the overdrive voltage | V ₃ | accordingly. is there.

The overdrive voltage | V ₃ | is preferably changed according to the mode of the liquid crystal such as TN, VA, IPS, and OCB. This is because even if the response speed of the liquid crystal varies depending on the mode of the liquid crystal, an optimal response time can always be obtained by changing the overdrive voltage | V ₃ | accordingly.

Note that the voltage rewrite cycle F may be the same as the frame cycle of the input signal. In this case, since the peripheral drive circuit of the liquid crystal display device can be simplified, a liquid crystal display device with low manufacturing cost can be obtained.

Note that the voltage rewrite cycle F may be shorter than the frame cycle of the input signal. For example,
The voltage rewriting period F may be 1/2 times the frame period of the input signal, may be 1/3 times, or may be less than that. This method is effective when used in combination with measures for reducing the quality of moving images caused by hold driving of liquid crystal display devices, such as black insertion driving, backlight blinking, backlight scanning, and intermediate image insertion driving by motion compensation. is there. That is, since the response time of the required liquid crystal element is short because the countermeasure method for the deterioration of the moving image quality caused by the hold driving of the liquid crystal display device is relatively easy by using the overdrive driving method described in this embodiment. In addition, the response time of the liquid crystal element can be shortened. Although the response time of the liquid crystal element can be essentially shortened by the cell gap, the liquid crystal material, the liquid crystal mode, and the like, it is technically difficult. Therefore, it is very important to use a method of shortening the response time of the liquid crystal element from the driving method such as overdrive.

Note that the voltage rewriting period F may be longer than the frame period of the input signal. For example,
The voltage rewrite period F may be twice, three times, or more than the frame period of the input signal. This method is effective when used in combination with means (circuit) for determining whether or not voltage rewriting is not performed for a long period of time. That is, when the voltage is not rewritten for a long time, the operation of the circuit can be stopped during the period by not performing the voltage rewriting operation itself, so that a liquid crystal display device with low power consumption is obtained. Can do.

Next, a specific method for changing the overdrive voltage | V ₃ | according to the voltages | V ₁ | and | V ₂ | that give the desired transmittances TR ₁ and TR ₂ will be described.

The overdrive circuit is a circuit for appropriately controlling the overdrive voltage | V ₃ | according to the voltages | V ₁ | and | V ₂ | that give the desired transmittances TR ₁ and TR _2. The signal input to the drive circuit is a voltage | V that gives the transmittance TR _1
1 | and a signal related to the voltage | V ₂ | giving the transmittance TR ₂ , and a signal output from the overdrive circuit is a signal related to the overdrive voltage | V ₃ |. Here, as these signals, voltages applied to the liquid crystal element (| V ₁ |, | V ₂ |
, | V ₃ |) or a digital signal for applying a voltage to be applied to the liquid crystal element. Here, it is assumed that the signal related to the overdrive circuit is a digital signal.

First, the overall configuration of the overdrive circuit will be described with reference to FIG. Here, the input image signal 301 is used as a signal for controlling the overdrive voltage.
01a and 30101b are used. As a result of processing these signals, an output image signal 30104 is output as a signal for giving an overdrive voltage.

Here, voltages | V ₁ | and | V ₂ | that give the desired transmittances TR ₁ and TR ₂ are:
Since the image signals are in frames adjacent to each other, the input image signals 30101a and 30101b are also preferably image signals in frames adjacent to each other. In order to obtain such a signal, the input image signal 30101a is input to the delay circuit 30102 in FIG. 80A, and the resulting output signal is input to the input image signal 3010.
1b. An example of the delay circuit 30102 is a memory. That is, in order to delay the input image signal 30101a by one frame, the input image signal 30101a is stored in the memory, and at the same time, the signal stored in the previous frame is stored in the memory as the input image signal 30101b. The input image signal 30101a and the input image signal 30101b are input to the correction circuit 30103 at the same time, so that image signals in adjacent frames can be handled. Then, by inputting image signals in adjacent frames to the correction circuit 30103, an output image signal 30104 can be obtained. Note that when a memory is used as the delay circuit 30102, a memory having a capacity capable of storing an image signal for one frame (that is, a frame memory) can be used in order to delay by one frame. By doing so, it is possible to have a function as a delay circuit without excessive or insufficient memory capacity.

Next, a delay circuit 30102 configured mainly for the purpose of reducing the memory capacity will be described. By using such a circuit as the delay circuit 30102, the memory capacity can be reduced, so that the manufacturing cost can be reduced.

As the delay circuit 30102 having such characteristics, specifically, a delay circuit as shown in FIG. 80B can be used. A delay circuit 30102 illustrated in FIG. 80B includes an encoder 30105, a memory 30106, and a decoder 30107.

The operation of the delay circuit 30102 shown in FIG. 80B is as follows. First, before storing the input image signal 30101a in the memory 30106, the encoder 3010
5 is used to perform compression processing. As a result, the size of data to be stored in the memory 30106 can be reduced. As a result, since the memory capacity can be reduced, the manufacturing cost can be reduced. Then, the compressed image signal is sent to the decoder 30107 where the decompression process is performed. As a result, the encoder 30105
It is possible to restore the previous signal that has been compressed. Here, the encoder 3010
5 and the decoder 30107 may be a reversible process. In this way, since the image signal is not deteriorated even after the compression / decompression process, the memory capacity can be reduced without degrading the quality of the image finally displayed on the apparatus. Further, the compression / decompression process performed by the encoder 30105 and the decoder 30107 may be an irreversible process. By doing so, the data size of the image signal after compression can be made very small, so that the memory capacity can be greatly reduced.

As a method for reducing the capacity of the memory, various methods can be used in addition to the methods listed above. Rather than compressing the image with an encoder, the color information of the image signal is reduced (for example, the color is reduced from 260,000 colors to 65,000 colors) or the number of data is reduced (the resolution is reduced). The method can be used.

Next, a specific example of the correction circuit 30103 will be described with reference to FIGS. The correction circuit 30103 is a circuit for outputting an output image signal having a certain value from two input image signals. Here, when the relationship between the two input image signals and the output image signal is non-linear and it is difficult to obtain by a simple calculation, a lookup table (LUT) may be used as the correction circuit 30103. Since the relationship between the two input image signals and the output image signal is obtained in advance in the LUT by measurement, the output image signals corresponding to the two input image signals can be obtained only by referring to the LUT. By using the LUT 30108 as the correction circuit 30103 (see FIG. 80C), the correction circuit 30103 can be realized without performing complicated circuit design or the like.

Here, since the LUT is one of the memories, it is preferable to reduce the memory capacity as much as possible in order to reduce the manufacturing cost. As an example of the correction circuit 30103 for realizing this, a circuit shown in FIG. Correction circuit 30103 shown in FIG.
Includes an LUT 30109 and an adder 30110. The LUT 30109 stores difference data between the input image signal 30101a and the output image signal 30104 to be output. That is, corresponding difference data is extracted from the LUT 30109 from the input image signal 30101a and the input image signal 30101b, and the extracted difference data and the input image signal 30 are extracted.
The output image signal 30104 can be obtained by adding 101a by the adder 30110. Note that the data stored in the LUT 30109 is the difference data, so that L
Reduction of the memory capacity of the UT can be realized. This is because the output image signal 30104 as it is.
This is because the data size of the difference data is smaller than that of the differential data, so that the memory capacity required for the LUT 30109 can be reduced.

Further, if the output image signal can be obtained by a simple operation such as four arithmetic operations of two input image signals, it can be realized by a combination of simple circuits such as an adder, a subtracter, and a multiplier.
As a result, it is not necessary to use an LUT, and the manufacturing cost can be greatly reduced.
An example of such a circuit is the circuit shown in FIG. In (
E) includes a subtractor 30111, a multiplier 30112, and an adder 3
0113. First, a subtracter 30111 obtains a difference between the input image signal 30101a and the input image signal 30101b. Thereafter, the multiplier 30112 multiplies the difference value by an appropriate coefficient. Then, an output image signal 30104 can be obtained by adding a difference value obtained by multiplying the input image signal 30101a by an appropriate coefficient by the adder 30113. By using such a circuit, it is not necessary to use an LUT, and the manufacturing cost can be greatly reduced.

Note that by using the correction circuit 30103 illustrated in FIG. 80E under certain conditions, output of an inappropriate output image signal 30104 can be prevented. The conditions include an output image signal 30104 that gives an overdrive voltage and an input image signal 30101.
The difference value between a and the input image signal 30101b is linear. Then, the linearity gradient is used as a coefficient multiplied by the multiplier 30112. That is, it is preferable to use a correction circuit 30103 shown in FIG. 80E for a liquid crystal element having such properties. As a liquid crystal element having such properties, an IPS mode liquid crystal element in which the response speed is small in gradation dependency can be given. Thus, for example, by using the correction circuit 30103 shown in FIG. 80E for the IPS mode liquid crystal element, the manufacturing cost can be significantly reduced.
In addition, it is possible to obtain an overdrive circuit that can prevent an inappropriate output image signal 30104 from being output.

Note that a function equivalent to the circuits shown in FIGS. 80A to 80E may be realized by software processing. As for the memory used for the delay circuit, other memory included in the liquid crystal display device, memory included in a device that sends an image to be displayed on the liquid crystal display device (for example, a video card included in a personal computer or a similar device, etc.) Can be diverted. By doing so, not only can the manufacturing cost be reduced, but also the user can select the strength of overdrive, the situation of use, etc. according to his / her preference.

Next, driving for manipulating the potential of the common line will be described with reference to FIG. 81 (
A) shows a plurality of pixel circuits when one common line is arranged for one scanning line in a display device using a capacitive display element such as a liquid crystal element. FIG. A pixel circuit illustrated in FIG. 81A includes a transistor 30201, an auxiliary capacitor 30202, a display element 30203, a video signal line 30204, a scanning line 30205, and a common line 30206.

The gate electrode of the transistor 30201 is electrically connected to the scan line 30205, one of the source electrode and the drain electrode of the transistor 30201 is electrically connected to the video signal line 30204, and the other of the source electrode and the drain electrode of the transistor 30201 Are electrically connected to one electrode of the auxiliary capacitor 30202 and one electrode of the display element 30203.
The other electrode of the auxiliary capacitor 30202 is electrically connected to the common line 30206.

First, in the pixel selected by the scanning line 30205, the transistor 30201 is turned on, so that the display element 30203 and the auxiliary capacitor 3 are connected through the video signal line 30204, respectively.
A voltage corresponding to the video signal is applied to 0202. At this time, the video signal is the common line 30.
When the lowest gradation is displayed for all the pixels connected to 206, or when the highest gradation is displayed for all the pixels connected to the common line 30206, the pixel It is not necessary to write a video signal via the video signal line 30204 respectively.
Instead of writing a video signal through the video signal line 30204, the voltage applied to the display element 30203 can be changed by moving the potential of the common line 30206.

Next, FIG. 81B shows a display device using a display element having a capacitive property such as a liquid crystal element when two common lines are arranged for one scanning line. It is a figure showing a plurality of pixel circuits. A pixel circuit illustrated in FIG. 81B includes a transistor 30211, an auxiliary capacitor 30212, a display element 30213, a video signal line 30214, a scanning line 30215, a first common line 30216, and a second common line 30217. .

The gate electrode of the transistor 30211 is electrically connected to the scan line 30215, one of the source electrode and the drain electrode of the transistor 30211 is electrically connected to the video signal line 30214, and the other of the source electrode and the drain electrode of the transistor 30211 Is electrically connected to one electrode of the auxiliary capacitor 30212 and one electrode of the display element 30213.
In addition, the other electrode of the auxiliary capacitor 30212 is electrically connected to the first common line 30216.
In the pixel adjacent to the pixel, the other electrode of the auxiliary capacitor 30212 is electrically connected to the second common line 30217.

Since the pixel circuit illustrated in FIG. 81B has few pixels electrically connected to one common line, the first common line 30216 is used instead of writing a video signal through the video signal line 30214. Alternatively, the frequency with which the voltage applied to the display element 30213 can be changed by moving the potential of the second common line 30217 is significantly increased. Further, source inversion driving or dot inversion driving is possible. By source inversion driving or dot inversion driving, flicker can be suppressed while improving element reliability.

Next, a scanning backlight will be described with reference to FIG. FIG. 82A is a diagram showing a scanning backlight in which cold cathode tubes are juxtaposed. The scanning backlight shown in FIG. 82A includes a diffusion plate 30301 and N cold cathode tubes 30302-1 to 30302 -N. N cold cathode tubes 30302-1 to 30302 -N are juxtaposed behind the diffuser plate 30301, so that the N cold cathode tubes 30302-1 to 30302 -N scan with varying luminance. Can do.

A change in luminance of each cold cathode tube during scanning will be described with reference to FIG. First, the luminance of the cold cathode fluorescent lamp 30302-1 is changed for a certain time. Then, after that, the cold cathode tube 30
The luminance of the cold cathode fluorescent lamp 30302-2 arranged next to 302-1 is changed for the same time. In this way, the luminance is changed in order from the cold cathode fluorescent lamps 30302-1 to 30302-N. Note that in FIG. 82C, the luminance to be changed for a certain period of time is smaller than the original luminance, but may be larger than the original luminance. Also, cold cathode fluorescent lamps 30302-1 to 3030
Although scanning up to 2-N is performed, scanning from cold cathode fluorescent lamps 30302-N to 30302-1 may be performed in the reverse direction.

By driving as shown in FIG. 82, the average luminance of the backlight can be reduced. Therefore, the power consumption of the backlight, which accounts for most of the power consumption of the liquid crystal display device, can be reduced.

An LED may be used as the light source of the scanning backlight. The scanning backlight in that case is as shown in FIG. The scanning backlight shown in FIG. 82B includes a diffusion plate 30311 and light sources 30312-1 to 30312 -N in which LEDs are juxtaposed. When the LED is used as the light source of the scanning backlight, the backlight is thin,
There is an advantage that can be lightened. Further, there is an advantage that the color reproduction range can be expanded. Further, LEs juxtaposed on each of the light sources 30312-1 to 30312 -N juxtaposed with LEDs.
Since D can also be scanned in the same manner, it can also be a dot scanning backlight.
If the point scanning type is adopted, the image quality of the moving image can be further improved.

Note that even when an LED is used as the light source of the backlight, it can be driven with varying luminance as shown in FIG.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 9)
In this embodiment, various liquid crystal modes will be described.

First, various liquid crystal modes will be described with reference to cross-sectional views.

134A and 134B are schematic views of cross sections of a TN mode.

A liquid crystal layer 50100 is sandwiched between a first substrate 50101 and a second substrate 50102 which are arranged to face each other. A first electrode 501 is provided on an upper surface of the first substrate 50101.
05 is formed. A second electrode 50106 is formed on the top surface of the second substrate 50102. A first polarizing plate 50103 is provided on the side of the first substrate 50101 opposite to the liquid crystal layer. A second polarizing plate 50104 is disposed on the opposite side of the second substrate 50102 from the liquid crystal layer. Note that the first polarizing plate 50103 and the second polarizing plate 50104 are arranged to be crossed Nicols.

The first polarizing plate 50103 may be disposed on the upper surface of the first substrate 50101. The second polarizing plate 50104 may be disposed on the upper surface of the second substrate 50102.

It is sufficient that at least one (or both) of the first electrode 50105 and the second electrode 50106 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 134A is a schematic view of a cross section when voltage is applied to the first electrode 50105 and the second electrode 50106 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the 1st polarizing plate 5
0103 and the second polarizing plate 50104 are arranged so as to be crossed Nicols.
Light from the backlight cannot pass through the substrate. Therefore, black display is performed.

Note that by controlling voltage applied to the first electrode 50105 and the second electrode 50106, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 134B is a schematic view of a cross section when voltage is not applied to the first electrode 50105 and the second electrode 50106. Since the liquid crystal molecules are aligned horizontally and rotated in a plane, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50103 and the second polarizing plate 50104 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed. This is a so-called normally white mode.

A liquid crystal display device having the structure illustrated in FIGS. 134A and 134B can perform full-color display by being provided with a color filter. The color filter is formed on the first substrate 50101.
Or on the second substrate 50102 side.

A known liquid crystal material may be used for the TN mode.

135A and 135B are schematic views of cross sections of the VA mode. The VA mode is a mode in which liquid crystal molecules are aligned so as to be perpendicular to the substrate when there is no electric field.

A liquid crystal layer 50200 is sandwiched between a first substrate 50201 and a second substrate 50202 which are arranged to face each other. On the top surface of the first substrate 50201, the first electrode 502 is provided.
05 is formed. A second electrode 50206 is formed on the top surface of the second substrate 50202. A first polarizing plate 50203 is provided on the side of the first substrate 50201 opposite to the liquid crystal layer. A second polarizing plate 50204 is provided on the opposite side of the second substrate 50202 from the liquid crystal layer. Note that the first polarizing plate 50203 and the second polarizing plate 50204 are arranged so as to be crossed Nicols.

The first polarizing plate 50203 may be disposed on the upper surface of the first substrate 50201. The second polarizing plate 50204 may be disposed on the upper surface of the second substrate 50202.

It is sufficient that at least one (or both) of the first electrode 50205 and the second electrode 50206 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 135A is a schematic view of a cross section when voltage is applied to the first electrode 50205 and the second electrode 50206 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged side by side, the light from the backlight is affected by the birefringence of the liquid crystal molecules. And the 1st polarizing plate 50
Since 203 and the second polarizing plate 50204 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50205 and the second electrode 50206. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 135B is a schematic view of a cross section when voltage is not applied to the first electrode 50205 and the second electrode 50206. Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. The first polarizing plate 50203 and the second polarizing plate
Since the polarizing plate 50204 is arranged in a crossed Nicols state, the light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

A liquid crystal display device having the structure illustrated in FIGS. 135A and 135B can perform full-color display by being provided with a color filter. The color filter is formed on the first substrate 50201.
It can be provided on the side or the second substrate 50202 side.

As the liquid crystal material used for the VA mode, a known material may be used.

135C and 135D are schematic views of cross sections of the MVA mode. The MVA mode is a method for mutually compensating the viewing angle dependency of each part.

A liquid crystal layer 50210 is sandwiched between a first substrate 50211 and a second substrate 50212 which are arranged to face each other. A first electrode 50211 is provided on an upper surface of the first substrate 50211.
15 is formed. A second electrode 50216 is formed on the top surface of the second substrate 50212. On the first electrode 50215, a first protrusion 502117 is formed for alignment control. A second protrusion 502118 is formed over the second electrode 50216 for alignment control. On the side opposite to the liquid crystal layer of the first substrate 50211, a first polarizing plate 50213 is provided.
Is arranged. On the side opposite to the liquid crystal layer of the second substrate 50212, a second polarizing plate 5021 is provided.
4 is arranged. Note that the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to be crossed Nicols.

The first polarizing plate 50213 may be disposed on the top surface of the first substrate 50211. The second polarizing plate 50214 may be disposed on the upper surface of the second substrate 50212.

It is only necessary that at least one (or both) of the first electrode 50215 and the second electrode 50216 have a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 135C is a schematic view of a cross section when voltage is applied to the first electrode 50215 and the second electrode 50216 (referred to as a vertical electric field mode). The liquid crystal molecules are the first protrusions 502117.
In addition, the light from the backlight is affected by the birefringence of the liquid crystal molecules because the second protrusion 502118 is tilted and aligned. Since the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that by controlling voltage applied to the first electrode 50215 and the second electrode 50216, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 135D is a schematic view of a cross section when voltage is not applied to the first electrode 50215 and the second electrode 50216. Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. The first polarizing plate 50213 and the second polarizing plate
Since the polarizing plate 50214 is arranged in a crossed Nicols state, the light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

A liquid crystal display device having the structure illustrated in FIGS. 135C and 135D can perform full-color display by being provided with a color filter. The color filter is formed on the first substrate 50211.
Or the second substrate 50212 side.

As the liquid crystal material used for the MVA mode, a known material may be used.

136A and 136B are schematic views of OCB mode cross sections. In the OCB mode, the alignment of the liquid crystal molecules forms an optically compensated state in the liquid crystal layer, and thus the viewing angle dependency is small. This state of the liquid crystal molecules is called bend alignment.

A liquid crystal layer 50300 is sandwiched between a first substrate 50301 and a second substrate 50302 which are arranged to face each other. A first electrode 503 is provided on an upper surface of the first substrate 50301.
05 is formed. A second electrode 50306 is formed on the top surface of the second substrate 50302. A first polarizing plate 50303 is provided on the opposite side of the first substrate 50301 from the liquid crystal layer. On the opposite side of the second substrate 50302 from the liquid crystal layer, a second polarizing plate 50304 is provided. Note that the first polarizing plate 50303 and the second polarizing plate 50304 are arranged so as to be crossed Nicols.

The first polarizing plate 50303 may be disposed on the upper surface of the first substrate 50301. The second polarizing plate 50304 may be disposed on the upper surface of the second substrate 50302.

It is sufficient that at least one (or both) of the first electrode 50305 and the second electrode 50306 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 136A is a schematic view of a cross section in the case where voltage is applied to the first electrode 50305 and the second electrode 50306 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the 1st polarizing plate 5
Since 0303 and the second polarizing plate 50304 are arranged so as to be crossed Nicols,
Light from the backlight does not pass through the substrate. Therefore, black display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50305 and the second electrode 50306. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 136B is a schematic view of a cross section when voltage is not applied to the first electrode 50305 and the second electrode 50306. Since the liquid crystal molecules are in a bend alignment state, the light from the backlight is affected by the birefringence of the liquid crystal molecules. The first polarizing plate 50303 and the second polarizing plate 50303
Since the polarizing plate 50304 is arranged so as to be crossed Nicol, light from the backlight passes through the substrate. Therefore, white display is performed. This is a so-called normally white mode.

A liquid crystal display device having the structure illustrated in FIGS. 136A and 136B can perform full-color display by being provided with a color filter. The color filter is formed on the first substrate 50301.
Or the second substrate 50302 side.

A known material may be used as the liquid crystal material used in the OCB mode.

136C and 136D are schematic views of cross sections in the FLC mode or the AFLC mode.

A liquid crystal layer 50310 is sandwiched between a first substrate 50311 and a second substrate 50312 which are arranged to face each other. On the top surface of the first substrate 50311, the first electrode 503 is provided.
15 is formed. A second electrode 50316 is formed on the top surface of the second substrate 5031. A first polarizing plate 50313 is provided on the opposite side of the first substrate 50311 from the liquid crystal layer. A second polarizing plate 50314 is disposed on the opposite side of the second substrate 50312 from the liquid crystal layer. Note that the first polarizing plate 50313 and the second polarizing plate 50314 are arranged so as to be crossed Nicols.

The first polarizing plate 50313 may be disposed on the upper surface of the first substrate 50311. The second polarizing plate 50314 may be disposed on the upper surface of the second substrate 5031.

It is only necessary that at least one (or both) of the first electrode 50315 and the second electrode 50316 have a light-transmitting property (transmission type or reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 136C is a schematic view of a cross section in the case where voltage is applied to the first electrode 50315 and the second electrode 50316 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged side by side in a direction shifted from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. And since the 1st polarizing plate 50313 and the 2nd polarizing plate 50314 are arrange | positioned so that it may become crossed Nicols, the light from a backlight passes a board | substrate. Therefore,
White display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling voltage applied to the first electrode 50315 and the second electrode 50316. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 136D is a schematic view of a cross section when voltage is not applied to the first electrode 50315 and the second electrode 50316. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And since the 1st polarizing plate 50313 and the 2nd polarizing plate 50314 are arrange | positioned so that it may become crossed Nicols, the light from a backlight does not pass a board | substrate. Therefore, black display is performed. This is a so-called normally black mode.

A liquid crystal display device having the structure illustrated in FIGS. 136C and 136D can perform full-color display by being provided with a color filter. The color filter is formed using the first substrate 50311.
Or the second substrate 50312 side.

As the liquid crystal material used in the FLC mode or AFLC mode, a known material may be used.

FIGS. 137A and 137B are schematic views of cross sections of the IPS mode. The IPS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate, and the electrode is only on one substrate side. The provided horizontal electric field method is adopted.

A liquid crystal layer 50400 is sandwiched between a first substrate 50401 and a second substrate 50402 which are arranged to face each other. A first electrode 504 is provided on an upper surface of the first substrate 50401.
05 and the second electrode 50406 are formed. A first polarizing plate 50403 is provided on the side of the first substrate 50401 opposite to the liquid crystal layer. A second polarizing plate 50404 is provided on the opposite side of the second substrate 50402 from the liquid crystal layer. Note that the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to be crossed Nicols.

The first polarizing plate 50403 may be disposed on the upper surface of the first substrate 50401. The second polarizing plate 50404 may be disposed on the upper surface of the second substrate 50402.

It is sufficient that at least one (or both) of the first electrode 50405 and the second electrode 50406 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 137A is a schematic view of a cross section when voltage is applied to the first electrode 50405 and the second electrode 50406 (referred to as a vertical electric field mode). Since the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50405 and the second electrode 50406. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 137B is a schematic view of a cross section when voltage is not applied to the first electrode 50405 and the second electrode 50406. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

A liquid crystal display device having the structure shown in FIGS. 137A and 137B can perform full-color display by being provided with a color filter. The color filter is formed using the first substrate 50401.
Or the second substrate 50402 side.

As the liquid crystal material used for the IPS mode, a known material may be used.

FIGS. 137 (C) and (D) are schematic views of cross sections of the FFS mode. The FFS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate. The provided horizontal electric field method is adopted.

A liquid crystal layer 50410 is sandwiched between a first substrate 50411 and a second substrate 50412 which are arranged to face each other. A second electrode 504 is provided on the upper surface of the first substrate 50411.
16 is formed. An insulating film 50417 is formed on the top surface of the second electrode 50416. A second electrode 50416 is formed over the insulating film 50417. A first polarizing plate 50413 is provided on the side of the first substrate 50411 opposite to the liquid crystal layer. On the opposite side of the second substrate 50412 from the liquid crystal layer, a second polarizing plate 50414 is provided. In addition,
The first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to be crossed Nicols.

The first polarizing plate 50413 may be disposed on the top surface of the first substrate 50411. The second polarizing plate 50414 may be disposed on the upper surface of the second substrate 50412.

It is only necessary that at least one (or both) of the first electrode 50415 and the second electrode 50416 have a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 137C is a schematic view of a cross section in the case where voltage is applied to the first electrode 50415 and the second electrode 50416 (referred to as a vertical electric field mode). Since the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling voltage applied to the first electrode 50415 and the second electrode 50416. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 137D is a schematic view of a cross section when voltage is not applied to the first electrode 50415 and the second electrode 50416. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

A liquid crystal display device having the structure shown in FIGS. 137C and 137D can perform full-color display by being provided with a color filter. The color filter is formed using the first substrate 50411.
Or the second substrate 50412 side.

As the liquid crystal material used for the FFS mode, a known material may be used.

Next, various liquid crystal modes will be described with reference to top views.

FIG. 138 is a top view of a pixel portion to which the MVA mode is applied. The MVA mode is a method for mutually compensating the viewing angle dependency of each part.

FIG. 138 shows a first pixel electrode 50501, a second pixel electrode (50502a, 50502b).
, 50502c), and a protrusion 50503. The first pixel electrode 50501 is
It is formed on the entire surface of the counter substrate. The second pixel electrode (50) so that the shape is a square shape.
502a, 50502b, 50502c) are formed. The shape of the second pixel electrode (5
0502a, 50502b, 50502c) corresponding to the first pixel electrode 5050.
A second pixel electrode (50502a, 50502b, 50502c) is formed on the substrate 1.

The opening of the second pixel electrode (50502a, 50502b, 50502c) functions like a protrusion.

The first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5050
When a voltage is applied to 2c) (referred to as a vertical electric field method), the liquid crystal molecules are transferred to the second pixel electrode (50
502a, 50502b, 50502c) and the protrusion 50503 are in a state of being tilted and arranged. When the pair of polarizing plates are arranged to be crossed Nicols,
Since the light from the backlight passes through the substrate, white display is performed.

Note that the first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5
By controlling the voltage applied to 0502c), the state of the liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

The first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5050
When no voltage is applied to 2c), the liquid crystal molecules are aligned vertically. When the pair of polarizing plates are arranged so as to be crossed Nicols, light from the backlight does not pass through the panel, so that black display is performed. This is a so-called normally black mode.

As the liquid crystal material used for the MVA mode, a known material may be used.

139 (A), (B), (C), and (D) are top views of a pixel portion to which the IPS mode is applied. The IPS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate, and the electrode is only on one substrate side. The provided horizontal electric field method is adopted.

In the IPS mode, the pair of electrodes are formed to have different shapes.

FIG. 139 illustrates a first pixel electrode 50601 and a second pixel electrode 50602. The first pixel electrode 50601 and the second pixel electrode 50602 have a wave shape.

FIG. 139B illustrates a first pixel electrode 50611 and a second pixel electrode 50612. The first pixel electrode 50611 and the second pixel electrode 50612 have a shape having concentric openings.

FIG. 139C illustrates a first pixel electrode 50631 and a second pixel electrode 50632. The first pixel electrode 50631 and the second pixel electrode 50632 are comb-like and partially overlapped.

FIG. 139D illustrates the first pixel electrode 50641 and the second pixel electrode 50642. The first pixel electrode 50641 and the second pixel electrode 50642 are comb-like and have a shape in which the electrodes are engaged with each other.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50
602, 50612, 50622, and 50632) are applied with a voltage (referred to as a vertical electric field method), the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction. When the pair of polarizing plates are arranged so as to be in crossed Nicols, white light is displayed because light from the backlight passes through the substrate.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50601, 50611, 50621, 50631) and the second electrode (50602, 50612, 50622, 50632). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50
When no voltage is applied to 602, 50612, 50622, 50632), the liquid crystal molecules are arranged side by side along the rubbing direction. When the pair of polarizing plates are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate, so that black display is performed. It is a so-called normally black mode.

As the liquid crystal material used for the IPS mode, a known material may be used.

140A, 140B, 140C, and 140D are top views of a pixel portion to which the FFS mode is applied. The FFS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate. The provided horizontal electric field method is adopted.

In the FFS mode, the first electrode is formed on the upper surface of the second electrode so as to have various shapes.

FIG. 140A illustrates a first pixel electrode 50701 and a second pixel electrode 50702. The first pixel electrode 50701 has a dogleg shape. Second pixel electrode 5070
2 may not be patterned.

FIG. 140B illustrates a first pixel electrode 50711 and a second pixel electrode 50712. The first pixel electrode 50711 has a concentric shape. The second pixel electrode 50712 is not necessarily patterned.

FIG. 140C illustrates a first pixel electrode 50731 and a second pixel electrode 50732. The first pixel electrode 50731 is comb-shaped and has a shape such that the electrodes mesh with each other. Second
The pixel electrode 50732 may not be patterned.

FIG. 140D illustrates a first pixel electrode 50741 and a second pixel electrode 50742. The first pixel electrode 50741 has a comb-like shape. The second pixel electrode 50742 is
The pattern may not be formed.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50
702, 50712, 50722, and 50732) (referred to as a vertical electric field method), the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction. When the pair of polarizing plates are arranged so as to be in crossed Nicols, white light is displayed because light from the backlight passes through the substrate.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50701, 50711, 50721, 50731) and the second electrode (50702, 50712, 50722, 50732). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50
702, 50712, 50722, and 50732), liquid crystal molecules are arranged side by side along the rubbing direction. When the pair of polarizing plates are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate, so that black display is performed. It is a so-called normally black mode.

As the liquid crystal material used for the IPS mode, a known material may be used.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 10)
In this embodiment mode, a pixel structure of a display device is described. In particular, a pixel structure of a liquid crystal display device will be described.

A pixel structure in which each liquid crystal mode and a transistor are combined will be described with reference to a cross-sectional view of the pixel.

Note that as the transistor, a thin film transistor (TFT) including a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as semi-amorphous) silicon, or the like can be used.

Note that a top gate type, a bottom gate type, or the like can be used as a structure of the transistor. Note that as the bottom-gate transistor, a channel etch type, a channel protection type, or the like can be used.

FIG. 85 is an example of a cross-sectional view of a pixel in the case where a TN mode and a transistor are combined.
By applying the pixel structure shown in FIG. 85 to a liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

Features of the pixel structure shown in FIG. 85 will be described. The liquid crystal molecules 10118 shown in FIG.
It is a long and narrow molecule with a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10118, the length is expressed in FIG. That is, the liquid crystal molecules 1011 expressed in a long way
8, the direction of the major axis is parallel to the paper surface, and the shorter the liquid crystal molecule 10118 expressed, the closer the major axis direction is to the normal direction of the paper surface. That is, the liquid crystal molecule 10118 shown in FIG. 85 has a major axis direction of 90 degrees different between the liquid crystal molecule 10118 close to the first substrate 10101 and the liquid crystal molecule 10118 close to the second substrate 10116. Liquid crystal molecules 101
The direction of the 18 major axes is a direction that smoothly connects them. That is, the liquid crystal molecules 10118 illustrated in FIG. 85 are 90 to 90 mm between the first substrate 10101 and the second substrate 10116.
The orientation is twisted.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 85, the two substrates are
The first substrate 10101 and the second substrate 10116. Transistors and pixel electrodes are formed on the first substrate. The second substrate includes a light shielding film 10114 and a color filter 101.
15, a fourth conductive layer 10113, a spacer 10117, and a second alignment film 10112 are formed.

Note that the light-blocking film 10114 is not necessarily formed over the second substrate 10116. Shading film 1
In the case where 0114 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1011
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10115 is not necessarily formed over the second substrate 10116.
In the case where the color filter 10115 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10115 is not formed, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1011
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed instead of the spacers 10117. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, in the case where the spacer 10117 is formed, the position of the spacer does not vary, so that the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10101 will be described.

First, the first insulating film 10102 is formed over the first substrate 10101 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10102 is not necessarily formed. The first insulating film 10102 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10103 is formed over the first insulating film 10102 by a photolithography method,
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10104 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10104, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10105 and a second semiconductor layer 10106 are formed. Note that the first semiconductor layer 10105 and the second semiconductor layer 10106 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10107 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10107 is processed. In addition,
As the second conductive layer 10107, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10106 is etched using the second conductive layer 10107 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10107. Then, the first conductive layer 10103 where the second semiconductor layer 10106 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10108 is formed, and contact holes are selectively formed in the third insulating film 10108. Note that a contact hole may be formed in the second insulating film 10104 at the same time as a contact hole is formed in the third insulating film 10108. In addition,
The surface of the third insulating film 10108 is preferably as flat as possible. This is because the alignment of liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10109 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a first alignment film 10110 is formed. Note that after the first alignment film 10110 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10101 manufactured as described above, the light-shielding film 10114, and the color filter 10
115, the fourth conductive layer 10113, the spacer 10117, and the second substrate 10116 provided with the second alignment film 10112 are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates. Note that in the TN mode, the fourth conductive layer 10113 is formed over the entire surface of the second substrate 10116.

FIG. 86A shows an MVA (Multi-domain Vertical Alignnm).
ent) is an example of a cross-sectional view of a pixel when a method and a transistor are combined. Fig. 86
By applying the pixel structure shown in (A) to a liquid crystal display device, a liquid crystal display device with a large viewing angle, a high response speed, and a high contrast can be obtained.

Features of the pixel structure illustrated in FIG. 86A are described. The characteristics of the pixel structure of the MVA liquid crystal panel will be described. Liquid crystal molecules 10218 shown in FIG. 86A are elongate molecules having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10218, the length is expressed in FIG. 86A. That is, the long expressed liquid crystal molecule 10218 is
It is assumed that the direction of the major axis is parallel to the paper surface, and the shorter the liquid crystal molecules 10218 expressed, the closer the major axis direction is to the normal direction of the paper surface. That is, the liquid crystal molecules 10218 illustrated in FIG. 86A are aligned so that the direction of the long axis is the normal direction of the alignment film. Therefore, the liquid crystal molecules 10218 in the portion where the alignment control protrusion 10219 is located are aligned with the alignment control protrusion 102
It is oriented radially around 19. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 86A, the two substrates are a first substrate 10201 and a second substrate 10216. Transistors and pixel electrodes are formed on the first substrate. The second substrate includes a light-blocking film 10214, a color filter 10215, a fourth conductive layer 10213, a spacer 10217, and a second alignment film 1021.
2 and an alignment control protrusion 10219 are formed.

Note that the light-blocking film 10214 is not necessarily formed over the second substrate 10216. Shading film 1
In the case where 0214 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1021
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10215 is not necessarily formed over the second substrate 10216.
In the case where the color filter 10215 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10215 is not manufactured, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1021
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10216 instead of the spacers 10217. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case where the spacer 10217 is formed, the position of the spacer does not vary, so that the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10201 is described.

First, the first insulating film 10202 is formed over the first substrate 10201 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10202 is not necessarily formed. The first insulating film 10202 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10203 is formed over the first insulating film 10202 by a photolithography method.
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10204 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10204, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10205 and a second semiconductor layer 10206 are formed. Note that the first semiconductor layer 10205 and the second semiconductor layer 10206 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10207 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10207 is processed. In addition,
As the second conductive layer 10207, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10206 is etched using the second conductive layer 10207 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10207. Then, the first conductive layer 10203 where the second semiconductor layer 10206 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10208 is formed, and contact holes are selectively formed in the third insulating film 10208. Note that a contact hole may be formed in the second insulating film 10204 at the same time as a contact hole is formed in the third insulating film 10208.

Next, the third conductive layer 10209 is formed by a photolithography method, a laser direct drawing method, an ink jet method, or the like.

Next, a first alignment film 10210 is formed. Note that after the first alignment film 10210 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10201 manufactured as described above, the light shielding film 10214, and the color filter 10
215, the fourth conductive layer 10213, the spacer 10217, and the second substrate 10216 over which the second alignment film 10212 is formed are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates. MVA
In the method, the fourth conductive layer 10213 is formed over the entire surface of the second substrate 10216.
Note that an alignment control protrusion 10219 is formed in contact with the fourth conductive layer 10213.
The shape of the orientation control protrusion 10219 is preferably a shape having a smooth curved surface.
By doing so, the alignment of the adjacent liquid crystal molecules 10218 becomes extremely close, so that alignment defects can be reduced. It is possible to reduce alignment film defects caused by alignment film disconnection.

FIG. 86 (B) shows PVA (Patterned Vertical Alignment).
It is an example of a cross-sectional view of a pixel in the case where a method and a transistor are combined. By applying the pixel structure shown in FIG. 86B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a high response speed, and a high contrast can be obtained.

Features of the pixel structure illustrated in FIG. 86B are described. Liquid crystal molecule 1 shown in FIG. 86 (B)
0248 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10248, the length is expressed in FIG. 86B. In other words, the liquid crystal molecule 10248 expressed in a long direction has a long axis direction parallel to the paper surface, and the liquid crystal molecule 10248 expressed in a short direction has a long axis direction closer to the normal direction of the paper surface. . That is, the liquid crystal molecules 10248 illustrated in FIG. 86B are aligned so that the direction of the long axis is the normal direction of the alignment film. Therefore, the liquid crystal molecules 10248 in a portion where the electrode notch 10249 is present
Are radially oriented around the boundary between the electrode notch 10249 and the fourth conductive layer 10243. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. 86B, the two substrates are a first substrate 10231 and a second substrate 10246. Transistors and pixel electrodes are formed on the first substrate. The second substrate includes a light shielding film 10244, a color filter 10245, a fourth conductive layer 10243, a spacer 10247, and the second alignment film 1.
0242 is formed.

Note that the light-blocking film 10244 is not necessarily formed over the second substrate 10246. Shading film 1
In the case where 0244 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. Meanwhile, the light shielding film 1024
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10245 is not necessarily formed over the second substrate 10246.
In the case where the color filter 10245 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10245 is not manufactured, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1024
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10246 instead of the spacers 10247. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case of forming the spacer 10247, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10231 will be described.

First, the first insulating film 10232 is formed over the first substrate 10231 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10232 is not necessarily formed. The first insulating film 10232 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10233 is formed over the first insulating film 10232 by a photolithography method,
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10234 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10234, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10235 and a second semiconductor layer 10236 are formed. Note that the first semiconductor layer 10235 and the second semiconductor layer 10236 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10237 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10237 is processed. In addition,
As the second conductive layer 10237, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10236 is etched using the second conductive layer 10237 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10237. Then, the portion of the first conductive layer 10233 from which the second semiconductor layer 10236 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10238 is formed, and contact holes are selectively formed in the third insulating film 10238. Note that a contact hole may be formed in the second insulating film 10234 at the same time as the contact hole is formed in the third insulating film 10238. In addition,
The surface of the third insulating film 10238 is preferably as flat as possible. This is because the alignment of liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10239 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a first alignment film 10240 is formed. Note that after the first alignment film 10240 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10231 manufactured as described above, the light-shielding film 10244, and the color filter 10
245, the fourth conductive layer 10243, the spacer 10247, and the second substrate 10246 on which the second alignment film 10242 is formed are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates. PVA
In the method, pattern processing is performed on the fourth conductive layer 10243 and the electrode notch 10249 is formed.
Is formed. The shape of the electrode notch 10249 is not limited, but is preferably a shape in which a plurality of rectangles having different directions are combined. By doing so, a plurality of regions having different orientations can be formed, so that a liquid crystal display device with a large viewing angle can be obtained. Note that the fourth conductive layer 10 at the boundary between the electrode notch 10249 and the fourth conductive layer 10243 is used.
The shape of 243 is preferably a smooth curve. By doing so, the alignment of the adjacent liquid crystal molecules 10248 becomes very close, so that alignment defects are reduced. Second alignment film 10
It is possible to reduce defects in the alignment film caused by the step 242 being cut off by the electrode notch 10249.

FIG. 87A is an example of a cross-sectional view of a pixel in the case where an IPS (In-Plane-Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87A to a liquid crystal display device, a liquid crystal display device with a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

Features of the pixel structure illustrated in FIG. 87A are described. Liquid crystal molecule 1 shown in FIG.
0318 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10318, the length is expressed in FIG. 87A. In other words, the liquid crystal molecule 10318 expressed in a long direction has a long axis direction parallel to the paper surface, and the liquid crystal molecule 10318 expressed in a short direction has a long axis direction closer to the normal direction of the paper surface. . That is, the liquid crystal molecules 10318 illustrated in FIG. 87A are aligned so that the direction of the long axis is always in the horizontal direction to the substrate. In FIG. 87A, the alignment is shown in the absence of an electric field. However, when an electric field is applied to the liquid crystal molecules 10318, the orientation of the major axis is always in the horizontal plane with the substrate kept in the horizontal direction. Rotate with. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 87A, the two substrates are a first substrate 10301 and a second substrate 10316. Transistors and pixel electrodes are formed on the first substrate. A light-blocking film 10314, a color filter 10315, a spacer 10317, and a second alignment film 10312 are formed over the second substrate.

Note that the light-blocking film 10314 is not necessarily formed over the second substrate 10316. Shading film 1
When 0314 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1031
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10315 is not necessarily formed over the second substrate 10316.
In the case where the color filter 10315 is not formed, the number of steps is reduced, so that manufacturing cost can be reduced. However, even when the color filter 10315 is not formed, a display device capable of color display by field sequential driving can be obtained. Since the structure is simple, the yield can be improved. On the other hand, the color filter 1031
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10316 instead of the spacers 10317. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacer 10317 is formed, the position of the spacer does not vary, so that the distance between the two substrates can be uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10301 is described.

First, the first insulating film 10302 is formed over the first substrate 10301 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10302 is not necessarily formed. The first insulating film 10302 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10303 is formed over the first insulating film 10302 by a photolithography method.
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10304 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10304, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10305 and a second semiconductor layer 10306 are formed. Note that the first semiconductor layer 10305 and the second semiconductor layer 10306 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10307 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10307 is processed. In addition,
As the second conductive layer 10307, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10306 is etched using the second conductive layer 10307 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10307. The first conductive layer 10303 where the second semiconductor layer 10306 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10308 is formed, and contact holes are selectively formed in the third insulating film 10308. Note that a contact hole may be formed in the second insulating film 10304 at the same time as a contact hole is formed in the third insulating film 10308.

Next, the third conductive layer 10309 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Here, the shape of the third conductive layer 10309 is two comb teeth that are meshed with each other. One comb-like electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and the other comb-like electrode is electrically connected to the common electrode. By doing so, a horizontal electric field can be effectively applied to the liquid crystal molecules 10318.

Next, a first alignment film 10310 is formed. Note that after the first alignment film 10310 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10301 manufactured as described above, the light shielding film 10314, and the color filter 10
315, the spacer 10317, and the second alignment film 10312 are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates.

FIG. 87B is an example of a cross-sectional view of a pixel in the case where an FFS (Fringe Field Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87B to a liquid crystal display device, a liquid crystal display device with a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

Features of the pixel structure illustrated in FIG. 89B are described. Liquid crystal molecule 1 shown in FIG. 89 (B)
0348 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10348, the length is expressed in FIG. 89B. In other words, the liquid crystal molecule 10348 expressed in a long direction has a direction of the long axis parallel to the paper surface, and the liquid crystal molecule 10348 expressed in a short direction has a long axis direction closer to the normal direction of the paper surface. . In other words, the liquid crystal molecules 10348 illustrated in FIG. 89B are aligned so that the direction of the long axis is always in the horizontal direction to the substrate. FIG. 89B shows the alignment in the absence of an electric field. However, when an electric field is applied to the liquid crystal molecules 10348, the orientation of the major axis always remains horizontal with the substrate. Rotate with. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 89B, the two substrates are a first substrate 10331 and a second substrate 10346. Transistors and pixel electrodes are formed on the first substrate, and the light shielding film 10344 and the color filter 1 are formed on the second substrate.
0345, a spacer 10347, and a second alignment film 10342 are formed.

Note that the light-blocking film 10344 is not necessarily formed over the second substrate 10346. Shading film 1
In the case where 0344 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1034
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10345 is not necessarily formed over the second substrate 10346.
In the case where the color filter 10345 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10345 is not formed, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1034
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10346 instead of the spacers 10347. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case where the spacer 10347 is formed, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10331 will be described.

First, the first insulating film 10332 is formed over the first substrate 10331 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10332 is not necessarily formed. The first insulating film 10332 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10333 is formed over the first insulating film 10332 by a photolithography method.
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10334 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10334, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10335 and a second semiconductor layer 10336 are formed. Note that the first semiconductor layer 10335 and the second semiconductor layer 10336 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10337 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that as an etching method performed when the shape of the second conductive layer 10337 is processed, dry etching is preferable. In addition,
As the second conductive layer 10337, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10336 is etched using the second conductive layer 10337 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10337. Then, the first conductive layer 10333 where the second semiconductor layer 10336 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10338 is formed, and contact holes are selectively formed in the third insulating film 10338.

Next, the fourth conductive layer 10343 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a fourth insulating film 10349 is formed, and contact holes are selectively formed in the fourth insulating film 10349. Note that the surface of the fourth insulating film 10349 is preferably as flat as possible. This is because the alignment of liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10339 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Here, the third conductive layer 10339 has a comb shape.

Next, a first alignment film 10340 is formed. Note that after the first alignment film 10340 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10331 manufactured as described above, the light shielding film 10344, and the color filter 10
A liquid crystal panel can be manufactured by bonding 345, the spacer 10347, and the second alignment film 10342 with a sealant with a gap of several micrometers and injecting a liquid crystal material between the two substrates.

Here, materials that can be used for each conductive layer or each insulating film will be described.

The first insulating film 10102 in FIG. 85, the first insulating film 10202 in FIG. 86A, and FIG.
), The first insulating film 10302 in FIG. 87A, and the first insulating film 10332 in FIG. 87B, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film ( An insulating film such as SiOxNy can be used. Alternatively, the first insulating film 101
For 02, an insulating film having a stacked structure in which two or more films of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), or the like are combined can be used.

The first conductive layer 10103 in FIG. 85, the first conductive layer 10203 in FIG. 86A, and FIG.
), The first conductive layer 10303 in FIG. 87A, the first conductive layer 10303 in FIG. 87A, and the first conductive layer 10333 in FIG. Mo, Ti
Al, Nd, Cr, or the like can be used. Alternatively, Mo, Ti, Al, Nd, C
A stacked structure in which two or more of r and the like are combined can be used.

85, the second insulating film 10204 in FIG. 86A, the second insulating film 10204 in FIG.
), The second insulating film 10304 in FIG. 87A, and the second insulating film 10334 in FIG. 87B, a thermal oxide film, a silicon oxide film, a silicon nitride film, or an oxide film. A silicon nitride film or the like can be used. Alternatively, a stacked structure in which two or more of a thermal oxide film, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and the like are combined can be used. Note that a silicon oxide film is preferable in a portion in contact with the semiconductor layer. This is because the trap level at the interface with the semiconductor layer is reduced when a silicon oxide film is used. Note that a silicon nitride film is preferable in a portion in contact with Mo.
This is because the silicon nitride film does not oxidize Mo.

The first semiconductor layer 10105 in FIG. 85, the first semiconductor layer 10205 in FIG. 86A, and FIG.
FIG. 87B shows the first semiconductor layer 10235 in FIG. 87A, FIG. 87A shows the first semiconductor layer 10305 in FIG.
As the first semiconductor layer 10335 in (B), silicon or silicon germanium (Si
Ge) or the like can be used.

The second semiconductor layer 10106 in FIG. 85, the second semiconductor layer 10206 in FIG. 86A, and FIG.
The second semiconductor layer 10236 in (B), the second semiconductor layer 10306 in FIG. 87A, and FIG.
As the second semiconductor layer 10336 in (B), silicon containing phosphorus or the like can be used.

85, the second conductive layer 10107 and the third conductive layer 10109 in FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 86A, the second conductive layer 10237 in FIG. 86B, and The second conductive layer 10239, the second conductive layer 10307 in FIG. 87A, and the second conductive layer 1
As a material having transparency of the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 87B, indium tin oxide in which tin oxide is mixed with indium oxide is used. (ITO) film, indium tin oxide (ITSO) film in which silicon oxide is mixed with indium tin oxide (ITO), indium zinc oxide (IZO) film in which zinc oxide is mixed in zinc oxide, zinc oxide film or oxide A tin film or the like can be used. Note that IZO is a transparent conductive material formed by sputtering using a target in which 2 to 20 wt% of zinc oxide (ZnO) is mixed with ITO.

85, the second conductive layer 10107 and the third conductive layer 10109 in FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 86A, the second conductive layer 10237 in FIG. 86B, and The second conductive layer 10239, the second conductive layer 10307 in FIG. 87A, and the second conductive layer 1
As materials having reflectivity for the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 87B, Ti, Mo, Ta, Cr, W
Al or the like can be used. Alternatively, a two-layer structure in which Ti, Mo, Ta, Cr, W, and Al are stacked, or a three-layer structure in which Al is sandwiched between metals such as Ti, Mo, Ta, Cr, and W may be used.

The third insulating film 10108 in FIG. 85, the third insulating film 10208 in FIG. 86A, and FIG.
) Third insulating film 10238, FIG. 86B third conductive layer 10239, FIG. 87A third insulating film 10308, FIG. 87B third insulating film 10338 and fourth. Insulating film 10
As the material 349, an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) or a low dielectric constant organic compound material (such as a photosensitive or non-photosensitive organic resin material) can be used. Alternatively, a material containing siloxane can be used. Siloxane is a material in which a skeleton structure is formed by a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

85. The first alignment film 10110 in FIG. 85, the first alignment film 10210 in FIG. 86A, and FIG.
), The first alignment film 10310 in FIG. 86B, and the first alignment film 10340 in FIG. 87B can be a polymer film such as polyimide.

Next, a pixel structure in the case where each liquid crystal mode and a transistor are combined will be described with reference to a top view (layout diagram) of the pixel.

As the liquid crystal mode, TN (Twisted Nematic) mode, IPS (
In-Plane-Switching mode, FFS (Fringe Field)
Switching mode, MVA (Multi-domain Vertical)
Alignment mode, PVA (Patterned Vertical Ali)
gmnent), ASM (Axial Symmetric Aligned Mi)
cro-cell) mode, OCB (Optical Compensated Bir)
efficiency mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liquid)
d Crystal) or the like can be used.

Note that as the transistor, a thin film transistor (TFT) including a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as semi-amorphous) silicon, or the like can be used.

Note that a top gate type, a bottom gate type, or the like can be used as a structure of the transistor. As the bottom-gate transistor, a channel etch type, a channel protection type, or the like can be used.

FIG. 88 is an example of a top view of a pixel in the case where a TN mode and a transistor are combined.
By applying the pixel structure shown in FIG. 88 to a liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

88 includes a scanning line 10401, a video signal line 10402, and a capacitor line 10403.
A transistor 10404, a pixel electrode 10405, and a pixel capacitor 10406.

The scan line 10401 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 402 denotes a function for transmitting a signal (video signal) to a pixel. The scanning line 104
Since 01 and the video signal line 10402 are arranged in a matrix, they are formed of different conductive layers. Note that the scan line 10401. A semiconductor layer may be disposed at an intersection with the video signal line 10402. In this way, the scanning line 10401 is obtained. Video signal line 10
402 and the cross capacitance can be reduced.

The capacitor line 10403 is arranged in parallel with the pixel electrode 10405. A portion where the capacitor line 10403 and the pixel electrode 10405 overlap is a pixel capacitor 10406. Note that a part of the capacitor line 10403 extends along the video signal line 10402 so as to surround the video signal line 10402. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10402. Note that the capacitor line 10403 and the video signal line 1040
By disposing the semiconductor layer between the two, the cross capacitance can be reduced. In addition,
The capacitor line 10403 is formed using a material similar to that of the scan line 10401.

The transistor 10404 functions as a switch for electrically connecting the video signal line 10402 and the pixel electrode 10405. Note that one of the source region and the drain region of the transistor 10404 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10404. Thus, the channel width of the transistor 10404 is increased, so that switching ability can be improved. Note that the transistor 10404
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10405 is electrically connected to one of a source electrode and a drain electrode of the transistor 10404. The pixel electrode 10405 is an electrode for applying a signal voltage transmitted through the video signal line 10402 to the liquid crystal element. Note that the pixel electrode 10405 is rectangular. By doing so, the aperture ratio of the pixel can be increased. The pixel electrode 1040
As 5, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10405.

FIG. 89A is an example of a top view of a pixel in the case where an MVA method and a transistor are combined. By applying the pixel structure shown in FIG. 89A to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a high response speed, and a high contrast can be obtained.

89A includes a scanning line 10501, a video signal line 10502, and a capacitor line 10.
503, a transistor 10504, a pixel electrode 10505, a pixel capacitor 10506,
An orientation control protrusion 10507.

The scan line 10501 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 502 denotes a function for transmitting a signal (video signal) to a pixel. Scan line 105
Since 01 and the video signal line 10502 are arranged in a matrix, they are formed of different conductive layers. Note that the scan line 10501. A semiconductor layer may be disposed at an intersection with the video signal line 10502. In this way, the scanning line 10501 is obtained. Video signal line 10
502 and cross capacitance can be reduced.

The capacitor line 10503 is arranged in parallel with the pixel electrode 10505. A portion where the capacitor line 10503 and the pixel electrode 10505 overlap with each other is a pixel capacitor 10506. Note that a part of the capacitor line 10503 extends along the video signal line 10502 so as to surround the video signal line 10502. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10502. Note that the capacitor line 10503 and the video signal line 1050
By disposing the semiconductor layer between the two, the cross capacitance can be reduced. In addition,
The capacitor line 10503 is formed using a material similar to that of the scan line 10501.

The transistor 10504 functions as a switch for electrically connecting the video signal line 10502 and the pixel electrode 10505. Note that one of the source region and the drain region of the transistor 10504 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10504. Thus, the channel width of the transistor 10504 is increased, so that switching ability can be improved. Note that the transistor 10504
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10505 is electrically connected to one of a source electrode and a drain electrode of the transistor 10504. The pixel electrode 10505 is an electrode for applying a signal voltage transmitted through the video signal line 10502 to the liquid crystal element. Note that the pixel electrode 10505 is rectangular. By doing so, the aperture ratio of the pixel can be increased. The pixel electrode 1050
As 5, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10505.

The orientation control protrusion 10507 is formed on the counter substrate. The alignment control protrusion 10507 has a function of radially aligning liquid crystal molecules. The shape of the alignment control protrusion 10507 is not limited. For example, the shape of the orientation control protrusion 10507 may be a dogleg shape. By doing so, it is possible to form a plurality of regions having different alignments of liquid crystal molecules. The viewing angle can be improved.

FIG. 89B is an example of a top view of a pixel in the case where a PVA mode and a transistor are combined. By applying the pixel structure shown in FIG. 89B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a high response speed, and a high contrast can be obtained.

The pixel illustrated in FIG. 89B includes a scan line 10511, a video signal line 10512, and a capacitor line 10.
513, a transistor 10514, a pixel electrode 10515, a pixel capacitor 10516,
An electrode notch portion 10517.

The scan line 10511 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
512 has a function for transmitting a signal (video signal) to a pixel. Scan line 105
11 and the video signal line 10512 are arranged in a matrix, and are formed of different conductive layers. Note that the scan line 10511 is used. A semiconductor layer may be disposed at an intersection with the video signal line 10512. In this way, the scanning line 10511 is obtained. Video signal line 10
512 and cross capacitance can be reduced.

The capacitor line 10513 is arranged in parallel with the pixel electrode 10515. A portion where the capacitor line 10513 and the pixel electrode 10515 overlap with each other is a pixel capacitor 10516. Note that a part of the capacitor line 10513 extends along the video signal line 10512 so as to surround the video signal line 10512. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10512. Note that the capacitor line 10513 and the video signal line 1051 are provided.
By disposing the semiconductor layer between the two, the cross capacitance can be reduced. In addition,
The capacitor line 10513 is formed using a material similar to that of the scan line 10511.

The transistor 10514 functions as a switch for electrically connecting the video signal line 10512 and the pixel electrode 10515. Note that one of the source region and the drain region of the transistor 10514 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10514. Thus, the channel width of the transistor 10514 is increased, so that switching ability can be improved. Note that the transistor 10514
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10515 is electrically connected to one of a source electrode and a drain electrode of the transistor 10514. The pixel electrode 10515 is an electrode for applying a signal voltage transmitted through the video signal line 10512 to the liquid crystal element. Note that the pixel electrode 10515 has a shape that matches the shape of the electrode notch 10517. Specifically, the electrode notch 10517
The shape is such that a portion in which the pixel electrode 10515 is not formed is formed in a portion without the mark. By doing so, it is possible to form a plurality of regions having different alignments of liquid crystal molecules. The viewing angle can be improved. Note that the pixel electrode 10515 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10515.

FIG. 90A is an example of a top view of a pixel in the case where an IPS mode and a transistor are combined. By applying the pixel structure shown in FIG. 90A to a liquid crystal display device, a liquid crystal display device with a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

A pixel illustrated in FIG. 90A includes a scanning line 10601, a video signal line 10602, and a common electrode 1.
0603, a transistor 10604, and a pixel electrode 10605.

The scan line 10601 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 602 denotes a function for transmitting a signal (video signal) to a pixel. Scan line 106
Since 01 and the video signal line 10602 are arranged in a matrix, they are formed of different conductive layers. Note that a semiconductor layer may be provided at an intersection between the scanning line 10601 and the video signal line 10602. In this way, the scanning line 10601 is obtained. Video signal line 106
02 and cross capacitance can be reduced. Note that the video signal line 10602 is connected to the pixel electrode 10.
It is formed in accordance with the shape of 605.

The common electrode 10603 is disposed in parallel with the pixel electrode 10605. Common electrode 1060
Reference numeral 3 denotes an electrode for generating a horizontal electric field. Note that the common electrode 10603 has a bent comb shape. Note that part of the common electrode 10603 extends along the video signal line 10602 so as to surround the video signal line 10602. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10602. Note that by disposing a semiconductor layer between the common electrode 10603 and the video signal line 10602, cross capacitance can be reduced. Note that a portion of the common electrode 10603 arranged in parallel with the scan line 10601 is formed using a material similar to that of the scan line 10601. Common electrode 106
The portion arranged in parallel with the pixel electrode 10605 of 03 is made of the same material as that of the pixel electrode 10605.

The transistor 10604 functions as a switch for electrically connecting the video signal line 10602 and the pixel electrode 10605. Note that one of the source region and the drain region of the transistor 10604 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10604. Thus, the channel width of the transistor 10604 is increased, so that switching ability can be improved. Note that the transistor 10604
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10605 is electrically connected to one of a source electrode and a drain electrode of the transistor 10604. The pixel electrode 10505 is an electrode for applying a signal voltage transmitted through the video signal line 10602 to the liquid crystal element. Note that the pixel electrode 10605 has a bent comb-like shape. By doing so, a transverse electric field can be applied to the liquid crystal molecules.
A plurality of regions having different alignment of liquid crystal molecules can be formed. The viewing angle can be improved. Note that the pixel electrode 10605 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10605.

Note that the comb-like portion of the common electrode 10603 and the pixel electrode 10605 may be formed of different conductive layers. For example, the comb-like portion of the common electrode 10603 is the scanning line 1
It may be formed of the same conductive layer as 0601 or the video signal line 10602. Similarly, the pixel electrode 10605 may be formed using the same conductive layer as the scan line 10601 or the video signal line 10602.

FIG. 90B is a top view of a pixel in the case where the FFS mode and a transistor are combined. By applying the pixel structure shown in FIG. 90B to a liquid crystal display device, a liquid crystal display device with a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

A pixel illustrated in FIG. 90B includes a scan line 10611, a video signal line 10612, and the common electrode 1.
0613, a transistor 10614, and a pixel electrode 10615 may be provided.

The scan line 10611 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 612 has a function of transmitting a signal (video signal) to the pixel. Scan line 106
11 and the video signal line 10612 are arranged in a matrix, and are formed of different conductive layers. Note that the scan line 10611. A semiconductor layer may be disposed at an intersection with the video signal line 10612. In this way, the scanning line 10611 is obtained. Video signal line 10
612 and the cross capacitance can be reduced. Note that the video signal line 10612 is connected to the pixel electrode 1.
It is formed to match the shape of 0615.

The common electrode 106016 is uniformly formed below the pixel electrode 10615 and below the pixel electrode 10615 and the pixel electrode 10615. Note that the common electrode 106033 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the common electrode 106001.

The transistor 10614 functions as a switch for electrically connecting the video signal line 10612 and the pixel electrode 10615. Note that one of the source region and the drain region of the transistor 10604 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10614. Thus, the channel width of the transistor 10614 is increased, so that switching ability can be improved. Note that the transistor 10614
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10615 is electrically connected to one of a source electrode and a drain electrode of the transistor 10614. The pixel electrode 10515 is an electrode for applying a signal voltage transmitted through the video signal line 10612 to the liquid crystal element. Note that the pixel electrode 10615 has a bent comb-like shape. By doing so, a transverse electric field can be applied to the liquid crystal molecules.
Note that the comb-like pixel electrode 10615 is disposed closer to the liquid crystal layer than the uniform portion of the common electrode 10613. A plurality of regions having different alignment of liquid crystal molecules can be formed.
The viewing angle can be improved. Note that the pixel electrode 10615 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10615.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 11)
In this embodiment, a manufacturing process of a liquid crystal cell (also referred to as a liquid crystal panel) is described.

A manufacturing process of a liquid crystal cell in the case of using a vacuum injection method as a liquid crystal filling method will be described with reference to FIG.
A description will be given with reference to A) to (E) and FIGS. 92 (A) to (C).

FIG. 92C is a cross-sectional view illustrating a liquid crystal cell. First substrate 70101 and second substrate 70
107 are attached to each other with a spacer 70106 and a sealant 70105 interposed therebetween.
A liquid crystal 70109 is provided between the first substrate 70101 and the second substrate 70107. Note that an alignment film 70102 is formed over the first substrate 70101 and the alignment film 701 is formed.
08 is formed over the second substrate 70107.

A plurality of pixels are formed in a matrix on the first substrate 70101. Each of the plurality of pixels may include a transistor. Note that the first substrate 70101 is T
It may be called an FT substrate, an array substrate, or a TFT array substrate. As the first substrate 70101, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic material) Using fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. it can. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. However, the present invention is not limited to this, and various things can be used.

A common electrode, a color filter, a black matrix, and the like are formed over the second substrate 70107. Note that the second substrate 70107 may be referred to as a counter substrate or a color filter substrate.

The alignment film 70102 has a function of aligning liquid crystal molecules in a certain direction. Alignment film 70102
For example, a polyimide resin can be used. However, the present invention is not limited to this, and various things can be used. Note that the alignment film 70108 is similar to the alignment film 70102.

The sealant 70105 is formed on the first substrate 70101 and the second substrate so that the liquid crystal 70109 does not leak.
The substrate 70107 is bonded. That is, it functions as a sealing material.

The spacer 70106 has a function of keeping a space (a liquid crystal cell gap) between the first substrate 70101 and the second substrate 70107 constant. As the spacer 70106, a granular spacer or a columnar spacer can be used. As the granular spacer, there are a fiber type and a spherical type. The material of the granular spacer includes plastic or glass. A spherical spacer formed of plastic is called a plastic bead and is widely used. In addition, the fiber-shaped spacer formed with glass is called glass fiber, and is mixed with a sealing material and used.

FIG. 91A is a cross-sectional view illustrating the step of forming the alignment film 70102 over the first substrate 70101. The alignment film 70102 is formed over the first substrate 70101 by a roller coating method using a roller 70103. However, the alignment film 701 is formed over the first substrate 70101.
As a method for forming 02, in addition to the roller coating method, an offset printing method, a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, or the like may be used. it can. Thereafter, temporary baking and main baking are sequentially performed on the alignment film 70102.

FIG. 91B is a cross-sectional view illustrating a step of performing a rubbing process on the alignment film 70102. The rubbing treatment is performed by rubbing the alignment film 70102 by rotating a rubbing roller 70104 in which a cloth is wound around a drum. When this rubbing treatment is performed on the alignment film 70102, grooves for aligning liquid crystal molecules in a certain direction are formed in the alignment film 70102. However, the present invention is not limited to this, and a groove may be formed in the alignment film using an ion beam. after that,
A water cleaning process is performed on the first substrate 70101. In this way, the first substrate 70101
It is possible to remove foreign matter or dirt on the surface of the surface.

Note that although not illustrated, an alignment film 70108 is formed over the second substrate 70107 as in the case of the first substrate 70101, and a rubbing process is performed on the alignment film 70108. However, the present invention is not limited to this, and a groove may be formed in the alignment film using an ion beam.

FIG. 91C is a cross-sectional view illustrating a step of forming the sealing material 70105 over the alignment film 70102. The sealing material 70105 is applied by a drawing apparatus or screen printing to form a seal pattern. This seal pattern is formed along the outer periphery of the first substrate 70101, and a liquid crystal injection port is provided in a part of the seal pattern. And U for temporary fixing
V resin is spot-coated by a dispenser or the like outside the display area of the first substrate 70101.

Note that the sealant 70105 may be formed over the second substrate 70107.

FIG. 91D is a cross-sectional view illustrating a step of spraying the spacer 70106 over the first substrate 70101. The spacer 70106 is sprayed and sprayed from the nozzle together with the compressed gas (dry spraying). Alternatively, the spacer 70106 is mixed with a volatile liquid, and this liquid is sprayed so as to expose the jet path (wet spraying). By such dry spraying or wet spraying, the spacer 70106 can be uniformly sprayed on the first substrate 70101.

Here, the case where a spherical granular spacer is used as the spacer 70106 has been described. However, the present invention is not limited to this, and columnar spacers can also be used. The columnar spacer may be formed on the first substrate 70101 or may be formed on the second substrate 70107. Alternatively, part of the spacer may be formed over the first substrate 70101 and the rest may be formed over the second substrate 70107.

In addition, the spacer may be mixed in the sealing material. By doing so, the cell gap of the liquid crystal can be easily kept constant.

FIG. 91E is a cross-sectional view illustrating a step of bonding the first substrate 70101 and the second substrate 70107 together. The first substrate 70101 and the second substrate 70107 are attached to each other in the air. Then, both substrates are pressed so that the gap between the first substrate 70101 and the second substrate 70107 is constant. After that, ultraviolet irradiation or heat treatment is performed on the sealant 701.
By applying to 05, the sealing material 70105 is cured.

FIGS. 92A and 92B are top views showing a process of filling liquid crystal. First substrate 70
A cell (also referred to as an empty cell) in which 101 and the second substrate 70107 are attached to each other is placed in a vacuum chamber. Thereafter, after the inside of the vacuum chamber is depressurized, the liquid crystal inlet 70113 of the empty cell is immersed in the liquid crystal. When the inside of the vacuum chamber is opened to the atmosphere, the liquid crystal 70109 is filled into the empty cell by the differential pressure and capillary action.

When a necessary amount of liquid crystal 70109 is filled in the empty cell, the liquid crystal injection port is sealed with resin 70110. Then, the liquid crystal adhering excessively to the empty cell is washed. Thereafter, a realignment process is performed on the liquid crystal 70109 by an annealing process. Thus, the liquid crystal cell is completed.

Next, a manufacturing process of a liquid crystal cell when a dropping method is used as a liquid crystal filling method will be described with reference to FIG.
This will be described with reference to (A) to (D) and FIGS. 94 (A) to (C).

FIG. 94C is a cross-sectional view illustrating the liquid crystal cell. First substrate 70301 and second substrate 70
307 are attached to each other with a spacer 70306 and a sealant 70305 interposed therebetween.
A liquid crystal 70309 is provided between the first substrate 70301 and the second substrate 70307. Note that an alignment film 70302 is formed over the first substrate 70301 and the alignment film 703 is formed.
08 is formed over the second substrate 70307.

A plurality of pixels are formed in a matrix over the first substrate 70301. Each of the plurality of pixels may include a transistor. Note that the first substrate 70301 is T
It may be called an FT substrate, an array substrate, or a TFT array substrate. As the first substrate 70301, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic material) Using fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. it can. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. However, the present invention is not limited to this, and various things can be used.

A common electrode, a color filter, a black matrix, and the like are formed over the second substrate 70307. Note that the second substrate 70307 may be referred to as a counter substrate or a color filter substrate.

The alignment film 70302 has a function of aligning liquid crystal molecules in a certain direction. Alignment film 70302
For example, a polyimide resin can be used. However, the present invention is not limited to this, and various things can be used. Note that the alignment film 70308 is similar to the alignment film 70302.

The sealant 70305 is formed with the first substrate 70301 and the second substrate so that the liquid crystal 70309 does not leak.
The substrate 70307 is bonded. That is, it functions as a sealing material.

The spacer 70306 has a function of keeping a space (a liquid crystal cell gap) between the first substrate 70301 and the second substrate 70307 constant. As the spacer 70306, a granular spacer or a columnar spacer can be used. As the granular spacer, there are a fiber type and a spherical type. The material of the granular spacer includes plastic or glass. A spherical spacer formed of plastic is called a plastic bead and is widely used. In addition, the fiber-shaped spacer formed with glass is called glass fiber, and is mixed with a sealing material and used.

FIG. 93A is a cross-sectional view illustrating a step of forming an alignment film 70302 over the first substrate 70301. The alignment film 70302 is formed over the first substrate 70301 by a roller coating method using a roller 70303. However, the alignment film 703 is formed over the first substrate 70301.
As a method for forming 02, in addition to the roller coating method, an offset printing method, a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, or the like may be used. it can. Thereafter, temporary baking and main baking are sequentially performed on the alignment film 70302.

FIG. 93B is a cross-sectional view illustrating a step of performing a rubbing process on the alignment film 70302. The rubbing treatment is performed by rubbing the alignment film 70302 by rotating a rubbing roller 70304 in which a cloth is wound around a drum. When this rubbing treatment is performed on the alignment film 70302, a groove for aligning liquid crystal molecules in a certain direction is formed in the alignment film 70302. However, the present invention is not limited to this, and a groove may be formed in the alignment film using an ion beam. after that,
A water cleaning process is performed on the first substrate 70301. In this way, the first substrate 70301
It is possible to remove foreign matter or dirt on the surface of the surface.

Note that although not illustrated, an alignment film 70308 is formed over the second substrate 70307 as in the case of the first substrate 70301, and a rubbing process is performed on the alignment film 70308. However, the present invention is not limited to this, and a groove may be formed in the alignment film using an ion beam.

FIG. 93C is a cross-sectional view illustrating a step of forming the sealing material 70305 over the alignment film 70302. The sealing material 70305 is applied by a drawing apparatus or screen printing to form a seal pattern. This seal pattern is formed along the outer periphery of the first substrate 70301. Here, the sealing material 70305 is a radical type UV resin or a cationic type U resin.
V resin is used. Then, the conductive resin is spot-coated with a dispenser.

Note that the sealant 70305 may be formed over the second substrate 70307.

FIG. 93D is a cross-sectional view illustrating a step of spraying the spacer 70306 over the first substrate 70301. The spacer 70306 is sprayed and sprayed from the nozzle together with the compressed gas (dry spraying). Alternatively, the spacer 70306 is mixed with a volatile liquid, and this liquid is sprayed so as to expose the jet path (wet spraying). By such dry spraying or wet spraying, the spacer 70306 can be uniformly sprayed on the first substrate 70301.

Here, the case where a spherical granular spacer is used as the spacer 70306 has been described. However, the present invention is not limited to this, and columnar spacers can also be used. The columnar spacer may be formed on the first substrate 70301 or may be formed on the second substrate 70307. Alternatively, part of the spacer may be formed over the first substrate 70301 and the rest may be formed over the second substrate 70307.

In addition, the spacer may be mixed in the sealing material. By doing so, the cell gap of the liquid crystal can be easily kept constant.

FIG. 94A is a cross-sectional view illustrating a step of dropping the liquid crystal 70309. After the defoaming process is performed on the liquid crystal 70309, the liquid crystal 70309 is dropped inside the sealant 70305.

Note that FIG. 94B is a top view after the liquid crystal 70309 is dropped. Sealing material 7030
5 is formed along the outer periphery of the first substrate 70301, the liquid crystal 70309 does not leak.

FIG. 94C is a cross-sectional view illustrating a step of bonding the first substrate 70301 and the second substrate 70307 together. The first substrate 70301 and the second substrate 70307 are attached to each other in a vacuum chamber. Then, both the substrates are pressed so that the gap between the first substrate 70301 and the second substrate 70307 is constant. After that, the sealing material 70305 is cured by being irradiated with ultraviolet rays. Here, it is desirable to cover the display portion with a mask and to irradiate the sealing material 70305 with ultraviolet rays. This is because the liquid crystal 70309 can be prevented from being deteriorated by ultraviolet rays. Then, by annealing treatment
A realignment process is performed on the liquid crystal 70309. Thus, the liquid crystal cell is completed.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 12)
In this embodiment mode, a structure and operation of a pixel of a display device are described.

95A and 95B are timing charts showing an example of digital time gray scale driving. The timing chart in FIG. 95A shows a driving method in the case where a signal writing period (address period) to a pixel and a light emission period (sustain period) are separated.

Note that a period for completely displaying an image for one display area is referred to as one frame period. One frame period has a plurality of subframe periods, and one subframe period has an address period and a sustain period. The address periods Ta1 to Ta4 indicate the time required for signal writing to pixels for all rows, and the periods Tb1 to Tb4 indicate the time required for signal writing to pixels for one row (or for one pixel). The sustain periods Ts1 to Ts4 indicate the time during which the lighting or non-lighting state is maintained according to the video signal written to the pixels, and the ratio of the lengths is expressed as Ts.
1: Ts2: Ts3: Ts4 = 2 ³ : 2 ² : 2 ¹ : 2 ⁰ = 8: 4: 2: 1. The gradation is expressed by the sustain period during which light is emitted.

The operation will be described. First, in the address period Ta1, pixel selection signals are input to the scanning lines in order from the first row, and pixels are selected. When a pixel is selected, a video signal is input from the signal line to the pixel. When a video signal is written to the pixel, the pixel holds the signal until the signal is input again. Lighting and non-lighting of each pixel in the sustain period Ts1 are controlled by the written video signal. Similarly, video signals are input to the pixels in the address periods Ta2, Ta3, and Ta4, and lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signals. In each subframe period, the pixel is not lit during the address period, and after the address period ends, the sustain period starts, and the pixel in which a signal for lighting is written is lit.

Here, with reference to FIG. 95B, description will be given focusing on the i-th pixel row. First, in the address period Ta1, pixel selection signals are sequentially input to the scanning lines from the first row, and the address period T
The pixel in the i-th row is selected in the period Tb1 (i) among a1. Then, when the i-th row pixel is selected, a video signal is input from the signal line to the i-th row pixel. And
When a video signal is written to the i-th row pixel, the i-th row pixel holds the signal until the signal is input again. Lighting and non-lighting of the i-th row pixel in the sustain period Ts1 are controlled by the written video signal. Similarly, address periods Ta2, Ta3, T
In a4, a video signal is input to the pixel in the i-th row, and lighting and non-lighting of the pixel in the i-th row in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signal. In each subframe period, the pixel is not lit during the address period, and after the address period ends, the sustain period starts, and the pixel in which a signal for lighting is written is lit.

Although the case where a 4-bit gradation is expressed has been described here, the number of bits and the number of gradations are not limited thereto. Note that the order of lighting does not have to be Ts1, Ts2, Ts3, and Ts4, and may be random or may be divided into a plurality of light sources. Ts1, Ts2
, Ts3 and Ts4 do not need to be a power of 2, but may be the same length of lighting time or may be slightly shifted from a power of 2.

Next, a driving method in the case where the signal writing period (address period) to the pixel and the light emission period (sustain period) are not separated will be described. That is, the pixel in the row where the video signal writing operation is completed holds the signal until the signal is written (or erased) to the pixel next time. A period from writing operation to next signal writing to this pixel is referred to as data holding time. During this data retention time, the pixel is turned on or off according to the video signal written to the pixel. The same operation is performed up to the last line, and the address period ends. Then, the signal writing operation in the next subframe period is started in order from the row where the data holding time has ended.

As described above, when the signal writing operation is completed and the data holding time is reached, in the driving method in which the pixel is turned on or off in accordance with the video signal written to the pixel immediately, the data holding time is attempted to be shorter than the address period. However, since signals cannot be input to two rows at the same time, it is necessary to prevent the address periods from overlapping, and therefore the data holding time cannot be shortened. As a result, it becomes difficult to perform high gradation display.

Therefore, a data holding time shorter than the address period is set by providing an erasing period. A driving method in the case where an erasing period is provided and a data holding time shorter than the address period is set will be described with reference to FIG.

First, in the address period Ta1, pixel scanning signals are input to the scanning lines in order from the first row,
A pixel is selected. When a pixel is selected, a video signal is input from the signal line to the pixel. When a video signal is written to the pixel, the pixel holds the signal until the signal is input again. The sustain period Ts1 is determined by the written video signal.
The lighting and non-lighting of each pixel in are controlled. In the row where the video signal writing operation is completed, the pixels are turned on or off in accordance with the video signal written immediately. The same operation is performed up to the last row, and the address period Ta1 ends. Then, the signal writing operation in the next subframe period is started in order from the row where the data holding time has ended. Similarly, video signals are input to the pixels in the address periods Ta2, Ta3, and Ta4, and lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signals. The end of the sustain period TS4 is set by the start of the erase operation. This is because if the signal written to the pixel is erased at the erase time Te of each row, the signal is forced regardless of the video signal written to the pixel in the address period until the signal is written to the next pixel. This is because the light is not turned on. That is, the data holding time ends from the pixel in the row where the erasing time Te has started.

Here, the i-th pixel row will be described with reference to FIG. In the i-th pixel row, in the address period Ta1, pixel scanning signals are sequentially input to the scanning lines from the first row, and pixels are selected. Then, when the i-th row pixel is selected in the period Tb1 (i), a video signal is input to the i-th row pixel. When a video signal is written to the i-th row pixel, the i-th row pixel holds the signal until the signal is input again. By the written video signal, lighting and non-lighting of the pixel in the i-th row in the sustain period Ts1 (i) are controlled. That is, when the video signal writing operation is completed in the i-th row,
In accordance with the video signal immediately written, the pixels in the i-th row are turned on or off. Similarly, a video signal is input to the i-th row pixel in the address periods Ta2, Ta3, and Ta4, and lighting and non-lighting of the i-th row pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signal. The end of the sustain period Ts4 (i) is set by starting the erase operation. This is because the light is forcibly turned off regardless of the video signal written to the pixels in the i-th row during the i-th erase time Ts (i). That is, when the erasing time Te (i) starts, the data holding time of the pixel in the i-th row ends.

Therefore, it is possible to provide a display device with a high gradation and a high duty ratio (ratio of lighting period in one frame period) shorter than the address period without separating the address period and the sustain period. Since the instantaneous luminance can be lowered, the reliability of the display element can be improved.

Although the case where a 4-bit gradation is expressed has been described here, the number of bits and the number of gradations are not limited thereto. Further, the lighting order need not be Ts1, Ts2, Ts3, and Ts4, and may be random or may be divided into a plurality of light emission. Ts1, Ts2,
The lighting times of Ts3 and Ts4 do not need to be a power of 2, but may be the same lighting time, or may be slightly shifted from the power of 2.

A structure and operation of a pixel to which digital time gray scale driving can be applied will be described.

FIG. 97 is a diagram illustrating an example of a pixel configuration to which digital time gray scale driving can be applied.

The pixel 80300 includes a switching transistor 80301 and a driving transistor 803.
02, a light emitting element 80304 and a capacitor 80303 are provided. The switching transistor 80301 has a gate connected to the scanning line 80306, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 80305, and a second electrode (the other of the source electrode and the drain electrode) connected to the driving transistor. It is connected to the gate of 80302. The driving transistor 80302 has a gate connected to the power supply line 80307 through the capacitor 80303, a first electrode connected to the power supply line 80307, and a second electrode connected to the first electrode of the light emitting element 80304 (
Pixel electrode). The second electrode of the light emitting element 80304 corresponds to the common electrode 80308.

Note that a low power supply potential is set for the second electrode (the common electrode 80308) of the light-emitting element 80304. Note that the low power supply potential is a potential that satisfies the low power supply potential <the high power supply potential with reference to the high power supply potential set in the power supply line 80307. For example, GND, 0V, or the like is set as the low power supply potential. Also good. The potential difference between the high power supply potential and the low power supply potential is expressed as the light emitting element 8030.
4, current is passed through the light emitting element 80304 to cause the light emitting element 80304 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80304. Set the potential.

Note that the capacitor 80303 can be omitted by using the gate capacitance of the driving transistor 80302 instead. With respect to the gate capacitance of the driving transistor 80302, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two.

When a pixel is selected by the scanning line 80306, that is, the switching transistor 80
When 301 is on, a video signal is input from the signal line 80305 to the pixel.
Then, charge for a voltage corresponding to the video signal is accumulated in the capacitor 80303, and the capacitor 80303 holds the voltage. This voltage is a voltage between the gate of the driving transistor 80302 and the first electrode, and corresponds to a gate-source voltage Vgs of the driving transistor 80302.

In general, the operation region of a transistor can be divided into a linear region and a saturation region. The boundary is when (Vgs−Vth) = Vds, where Vds is the drain-source voltage, Vgs is the gate-source voltage, and Vth is the threshold voltage. (Vgs−Vth)> Vds
Is a linear region, and the current value is determined by the magnitudes of Vds and Vgs. on the other hand,(
When Vgs−Vth) <Vds, the saturation region is reached. Ideally, even if Vds changes,
The current value hardly changes. That is, the current value is determined only by the magnitude of Vgs.

Here, in the case of the voltage input voltage driving method, a video signal is input to the gate of the driving transistor 80302 so that the driving transistor 80302 is sufficiently turned on or off. That is, the driving transistor 80302 is operated in a linear region.

Therefore, in the case of a video signal in which the driving transistor 80302 is turned on, ideally, the power supply potential VDD set to the power supply line 80307 is set to the first electrode of the light emitting element 80304 as it is.

That is, ideally, the voltage applied to the light emitting element 80304 is made constant, and the light emitting element 80304 is used.
The luminance obtained from is made constant. A plurality of subframe periods are provided within one frame period, video signals are written to the pixels for each subframe period, and lighting or non-lighting of the pixels is controlled for each subframe period. Depending on the total subframe period,
Express gradation.

Note that when a video signal that causes the driving transistor 80302 to operate in a saturation region is input, a current can flow through the light-emitting element 80304. If the light-emitting element 80304 is an element that determines luminance in accordance with current, reduction in luminance due to deterioration of the light-emitting element 80304 can be suppressed. Further, by making the video signal analog, a light emitting element 8030 is obtained.
4 can be supplied with a current corresponding to the video signal. In this case, analog gradation driving can be performed.

FIG. 98 is a diagram illustrating an example of a pixel configuration to which digital time gray scale driving can be applied.

The pixel 80400 includes a switching transistor 80401 and a driving transistor 804.
02, a capacitor 80403, a light emitting element 80404, and a rectifying element 80409.
The switching transistor 80401 has a gate connected to the second scan line 80406,
The first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80405, and the second electrode (the other of the source electrode and the drain electrode) is connected to the gate of the driving transistor 80402. The driving transistor 80402 has a gate connected to the power supply line 80407 through the capacitor 80403, and a gate connected to the second scanning line 804 through the rectifier 80309.
10, the first electrode is connected to the power supply line 80407, and the second electrode is the light emitting element 8040.
4 first electrodes (pixel electrodes). The second electrode of the light emitting element 80404 corresponds to the common electrode 80408.

Note that a low power supply potential is set for the second electrode (the common electrode 80408) of the light-emitting element 80404. Note that the low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80407. For example, GND, 0V, or the like is set as the low power supply potential. Also good. The potential difference between the high power supply potential and the low power supply potential is expressed as the light emitting element 8040.
4, current is passed through the light emitting element 80404 to cause the light emitting element 80404 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80404. Set the potential.

Note that the capacitor 80403 can be omitted by using the gate capacitor of the driving transistor 80402 instead. As for the gate capacitance of the driving transistor 80402, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two.

Note that a diode-connected transistor can be used as the rectifying element 80409. Besides a diode-connected transistor, a PN junction diode, a PIN junction diode, a Schottky diode, or a diode formed of carbon nanotubes may be used. The polarity of the diode-connected transistor may be an N-channel type or a P-channel type.

A pixel 80400 includes a rectifier element 80409 and a second scan line 8041 in addition to the pixel shown in FIG.
0 is added. Therefore, the switching transistor 80401 shown in FIG.
, Driving transistor 80402, capacitor element 80403, light emitting element 80404, signal line 8
Reference numeral 0405, the first scanning line 80406, the power supply line 80407, and the common electrode 80408 are the switching transistor 80301 and the driving transistor 803 shown in FIG. 97, respectively.
02, a capacitor element 80303, a light emitting element 80304, a signal line 80305, a scanning line 80306
, Corresponding to the power supply line 80307 and the common electrode 80308. Therefore, the writing operation and the light emitting operation in FIG. 98 are the same as the writing operation and the light emitting operation described with reference to FIG.

The erase operation will be described. At the time of erasing operation, an H level signal is input to the second scan line 80410. Then, current flows through the rectifying element 80409, and the gate potential of the driving transistor 80402 held by the capacitor 80403 can be set to a certain potential. In other words, the gate potential of the driving transistor 80402 can be set to a certain potential, and the driving transistor 80402 can be forcibly turned off regardless of the video signal written to the pixel.

Note that the L-level signal input to the second scan line 80410 is set to a potential such that no current flows through the rectifier element 80409 when a non-lighting video signal is written to the pixel.
The H level signal input to the second scan line 80410 is set to a potential at which the gate transistor 80402 can be turned off regardless of the video signal written to the pixel.

Note that a diode-connected transistor can be used as the rectifying element 80409. In addition to a diode-connected transistor, a PN junction diode, P
An IN junction diode, a Schottky diode, a diode formed of carbon nanotubes, or the like may be used. The polarity of the diode-connected transistor may be an N-channel type or a P-channel type.

FIG. 99 is a diagram illustrating an example of a pixel configuration to which digital time gray scale driving can be applied.

The pixel 80500 includes a switching transistor 80501 and a driving transistor 805.
02, a capacitor 80503, a light emitting element 80504, and an erasing transistor 80509. The switching transistor 80501 has a gate connected to the second scan line 80506, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 80505, and a second electrode (the other of the source electrode and the drain electrode) The gate of the driving transistor 80502 is connected. The driving transistor 80502 has a gate that has a capacitor 8050.
3 is connected to the power supply line 80507 through the first gate of the erasing transistor 80509.
The first electrode is connected to the power supply line 80507, and the second electrode is connected to the light emitting element 8050.
4 first electrodes (pixel electrodes). The erasing transistor has a gate connected to the second scan line 80510 and a second electrode connected to the power supply line 80507. Light emitting element 8
The second electrode 0504 corresponds to the common electrode 80508.

Note that a low power supply potential is set for the second electrode (the common electrode 80508) of the light-emitting element 80504. Note that the low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80507. For example, GND, 0V, or the like is set as the low power supply potential. Also good. The potential difference between the high power supply potential and the low power supply potential is expressed as the light emitting element 8050.
4, current is passed through the light emitting element 80504 to cause the light emitting element 80504 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80504. Set the potential.

Note that the capacitor 80503 can be omitted by using the gate capacitor of the driving transistor 80502 instead. As for the gate capacitance of the driving transistor 80502, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two.

A pixel 80500 is obtained by adding an erasing transistor 80509 and a second scanning line 80510 to the pixel shown in FIG. Therefore, the switching transistor 80501, the driving transistor 80502, the capacitor 80503, and the light-emitting element 80504 illustrated in FIG.
, Signal line 80505, first scan line 80506, power supply line 80507, and common electrode 8050
8 corresponds to the switching transistor 80301, the driving transistor 80302, the capacitor 80303, the light emitting element 80304, the signal line 80305, the scanning line 80306, the power supply line 80307, and the common electrode 80308 shown in FIG. 97, respectively. Therefore, FIG.
Since the writing operation and the light emitting operation are the same as the writing operation and the light emitting operation described with reference to FIG. 97, the description thereof is omitted.

The erase operation will be described. At the time of erasing operation, an H level signal is input to the second scan line 80510. Then, the erasing transistor 80509 is turned on, so that the gate of the driving transistor and the first electrode can be set to the same potential. That is, the driving transistor 80502
Vgs can be set to 0V. Thus, the driving transistor 80502 can be forcibly turned off.

A configuration and operation of a pixel called a threshold voltage correction type will be described. The threshold voltage correction type pixel can be applied to digital time gray scale driving and analog gray scale driving.

FIG. 100 is a diagram illustrating an example of a configuration of a pixel called a threshold voltage correction type.

100 includes a driving transistor 80600, a first switch 80601, a second switch 80602, a third switch 80603, a first capacitor 80604, a second capacitor
The capacitor 80605 and the light-emitting element 80620 are included. Driving transistor 806
The 00 gate is connected to the signal line 80611 through the first capacitor 80604 and the first switch 80601 in this order. A gate of the driving transistor 80600 is connected to the power supply line 80612 through the second capacitor element 80605. Driving transistor 8
The first electrode 0600 is connected to the power supply line 80612. Driving transistor 806
The second electrode 00 is connected to the first electrode of the light emitting element 80620 through the third switch 80603. The second electrode of the driving transistor 80600 is connected to the second switch 806.
02 is connected to the gate of the driving transistor 80600. Light emitting element 806
The 20 second electrodes correspond to the common electrode 80621.

A low power supply potential is set for the second electrode of the light-emitting element 80620. Note that the low power supply potential is a potential that satisfies the low power supply potential <the high power supply potential with reference to the high power supply potential set in the power supply line 80612. For example, GND, 0V, or the like is set as the low power supply potential. Also good.
A potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80620, so that the light emitting element 80
In order to cause the light-emitting element 80620 to emit light by passing a current through 620, each potential is set so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light-emitting element 80620. Note that the second capacitor element 80605 can be omitted instead of the gate capacitor of the driving transistor 80600. As for the gate capacitance of the driving transistor 80600, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two. Note that the first switch 80601, the second switch 80602, and the third switch 80603 are controlled to be turned on and off by a first scan line 80613, a second scan line 80614, and a third scan line 80614, respectively. .

100, the operation period is set to an initialization period, a data writing period,
The description will be divided into a threshold acquisition period and a light emission period.

In the initialization period, the second switch 80602 and the third switch 80603 are turned on.
Then, the gate potential of the driving transistor 80600 is at least lower than the potential of the power supply line 80612. At this time, the first switch 80601 may be on or off. Note that the initialization period is not necessarily required.

In the threshold acquisition period, a pixel is selected by the first scan line 80613. That is, the first switch 80601 is turned on and a certain voltage is input from the signal line 80611. At this time, the second switch 80602 is turned on and the third switch 80603 is turned off. Accordingly, the driving transistor 80600 is diode-connected, and the second electrode and the gate of the driving transistor 80600 are in a floating state (floating state). And
The gate potential of the driving transistor 80600 is a value obtained by subtracting the threshold voltage of the driving transistor 80600 from the potential of the power supply line 80612. Therefore, the first capacitor element 806
04 holds the threshold voltage of the driving transistor 80600. Second capacitive element 8
In 0605, a potential difference between the gate potential of the driving transistor 80600 and a constant voltage input from the signal line 80611 is held.

In the data writing period, a video signal (voltage) is input from the signal line 80611. At this time, the first switch 80601 remains on, the second switch 80602 turns off, and the third switch 80603 remains off. Then, the driving transistor 806
Since the gate of 00 is in a floating state (floating state), the gate potential of the driving transistor 80600 is a constant voltage input to the signal line 80611 in the threshold value acquisition period and the signal line 80611 input in the data writing period. It changes according to the potential difference with the video signal. For example, the capacitance value of the first capacitor element 80604 << the second capacitor element 8
If the capacitance value is 0605, the driving transistor 80600 in the data writing period
The threshold potential of the driving transistor 80600 is determined from the potential of the signal line 80611 in the threshold acquisition period and the potential and potential difference (change amount) of the signal line 80611 in the data writing period and the potential of the power supply line 80612. Is approximately equal to the sum of the value minus.
That is, the potential of the gate of the driving transistor 80600 is equal to that of the driving transistor 8060.
A potential obtained by correcting the threshold voltage of 0 is obtained.

In the light emission period, the potential difference between the gate of the driving transistor 80600 and the power supply line 80612 (
A current corresponding to Vgs) flows to the light emitting element 80620. At this time, the first switch 806
01 turns off, the second switch 80602 remains off, and the third switch 8060
3 turns on. Note that a current flowing through the light-emitting element 80620 is a driving transistor 8060.
It is constant regardless of the threshold voltage of 0.

Note that the pixel structure illustrated in FIG. 100 is not limited thereto. For example, a switch, a resistor, a capacitor, a transistor, a logic circuit, or the like may be newly added to the pixel illustrated in FIG. For example, the second switch 80602 includes a P-channel transistor or an N-channel transistor, the third switch 80603 includes a transistor having a polarity different from that of the second switch 80602, and the second switch 80602 and The third switch 80603 may be controlled by the same scanning line.

A structure and operation of a pixel called a current input type will be described. The current input positive type pixel can be applied to digital gradation driving and analog gradation driving.

FIG. 101 is a diagram illustrating an example of a structure of a pixel called a current input type.

A pixel illustrated in FIG. 101 includes a driving transistor 80700, a first switch 80701, a second switch 80702, a third switch 80703, a capacitor 80704, and a light-emitting element 80730. The gate of the driving transistor 80700 is connected to the second switch 8
0702 and the first switch 80701 are sequentially connected to the signal line 80711. The gate of the driving transistor 80700 is connected to the power supply line 807 through the capacitor 80704.
12 is connected. The first electrode of the driving transistor 80700 is a power supply line 80712.
It is connected to the. The second electrode of the driving transistor 80700 is connected to the first switch 807.
It is connected to the power supply line 80712 through 01. Second of the driving transistor 80700
The electrode is connected to the first electrode of the light emitting element 80730 through the third switch 80703. The second electrode of the light-emitting element 80730 corresponds to the common electrode 80731.

A low power supply potential is set for the second electrode of the light-emitting element 80730. Note that the low power supply potential is a potential that satisfies a low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80712. For example, GND, 0V, or the like is set as the low power supply potential. Also good.
A potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80730, so that the light emitting element 80
In order to cause the light-emitting element 80730 to emit light by causing a current to flow through 730, each potential is set so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light-emitting element 80730. Note that the capacitor 80704 can be omitted instead of the gate capacitance of the driving transistor 80700. Regarding the gate capacitance of the driving transistor 80700, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two. Note that the first switch 80701, the second switch 80702, and the third switch 80703 are controlled to be turned on and off by a first scan line 80713, a second scan line 80714, and a third scan line 80734, respectively. .

The pixel driving method illustrated in FIG. 101 is described by dividing an operation period into a data writing period and a light emission period.

In the data writing period, a pixel is selected by the first scan line 80713. That means
The first switch 80701 is turned on, and a current is input as a video signal from the signal line 80711. At this time, the second switch 80702 is turned on and the third switch 80703 is turned off. Accordingly, the potential of the gate of the driving transistor 80700 becomes a potential corresponding to the video signal. That is, the capacitor 80704 holds a voltage between the gate electrode and the source electrode of the driving transistor 80700 that causes the driving transistor 80700 to pass the same current as the video signal.

Next, in the light emission period, the first switch 80701 and the second switch 80702 are turned off, and the third switch 80703 is turned on. Accordingly, a current having the same value as the video signal flows through the light emitting element 80730.

Note that the pixel structure illustrated in FIG. 101 is not limited thereto. For example, a switch, a resistor, a capacitor, a transistor, a logic circuit, or the like may be newly added to the pixel illustrated in FIG. For example, the first switch 80701 is a P-channel transistor or an N-channel transistor, the second switch 80702 is a transistor having the same polarity as the first switch 80701, and the first switch 80701 and the second switch 80701 The switch 80702 may be controlled by the same scanning line. The second switch 80702 may be disposed between the gate of the driving transistor 80700 and the signal line 80711.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 13)
In this embodiment, a pixel structure of a display device will be described. In particular, a pixel structure of a display device using an organic EL element will be described.

FIG. 102A is an example of a top view (layout diagram) of a pixel having two transistors in one pixel. FIG. 102B is an example of a cross-sectional view taken along the line XX ′ illustrated in FIG.

FIG. 102A illustrates a first transistor 60105, a first wiring 60106, a second wiring 60107, a second transistor 60108, a third wiring 60111, and a counter electrode 6011.
2, capacitor 60113, pixel electrode 60115, partition wall 60116, organic conductor film 601
17 shows an organic thin film 60118 and a substrate 60119. Note that the first transistor 60105 is a switching transistor, the first wiring 60106 is a gate signal line, the second wiring 60107 is a source signal line, the second transistor 60108 is a driving transistor, and a third wiring 60111 is preferably used as each current supply line.

The gate electrode of the first transistor 60105 is electrically connected to the first wiring 60106, one of the source electrode and the drain electrode of the first transistor 60105 is electrically connected to the second wiring 60107, and The other of the source electrode and the drain electrode of one transistor 60105 is a gate electrode of the second transistor 60108 and a capacitor 60113
Is electrically connected to one of the electrodes. Note that the gate electrode of the first transistor 60105 includes a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60105 can be reduced.

One of the source electrode and the drain electrode of the second transistor 60108 is connected to the third wiring 60.
111, and the other of the source electrode and the drain electrode of the second transistor 60108 is electrically connected to the pixel electrode 60115. Accordingly, the current flowing through the pixel electrode 60115 can be controlled by the second transistor 60108.

An organic conductor film 60117 is provided on the pixel electrode 60115, and the organic thin film 601 is further provided.
18 (organic compound layer) is provided. On the organic thin film 60118 (organic compound layer),
A counter electrode 60112 is provided. Note that the counter electrode 60112 may be formed in a solid form so as to be commonly connected to all the pixels, or may be formed in a pattern using a shadow mask or the like.

Light emitted from the organic thin film 60118 (organic compound layer) is transmitted through either the pixel electrode 60115 or the counter electrode 60112.

In FIG. 102B, the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is called bottom emission, and the case where light is emitted to the counter electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60115 is preferably formed using a transparent conductive film.
Conversely, in the case of top emission, the counter electrode 60112 is preferably formed using a transparent conductive film.

In a light emitting device for color display, EL elements having emission colors of R, G, and B may be applied separately, or a monochrome EL element is applied in a solid form, and R, G, and B are applied by color filters.
B light emission may be obtained.

Note that the structure illustrated in FIG. 102 is merely an example, and various structures other than the structure illustrated in FIG. 102 can be taken with respect to the pixel layout, the cross-sectional structure, the stacking order of the electrodes of the EL element, and the like. For the light emitting layer, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used in addition to the element composed of the illustrated organic thin film.

FIG. 103A is an example of a top view (layout diagram) of a pixel having three transistors in one pixel. FIG. 103 (B) is an example of a cross-sectional view taken along the line XX ′ shown in FIG. 103 (A).

FIG. 103A illustrates a substrate 60200, a first wiring 60201, a second wiring 60202, a third wiring 60203, a fourth wiring 60204, a first transistor 60205, a second transistor 60206, and a third transistor. 60207, pixel electrode 60208, partition wall 60
211, an organic conductor film 60212, an organic thin film 60213, and a counter electrode 60214.
Note that the first wiring 60201 is a source signal line, the second wiring 60202 is a writing gate signal line, the third wiring 60203 is an erasing gate signal line, and a fourth wiring 602 is used.
It is preferable that 04 is used as a current supply line, the first transistor 60205 is used as a switching transistor, the second transistor 60206 is used as an erasing transistor, and the third transistor 60207 is used as a driving transistor.

The gate electrode of the first transistor 60205 is electrically connected to the second wiring 60202, and one of the source electrode and the drain electrode of the first transistor 60205 is electrically connected to the first wiring 60201, and The other of the source electrode and the drain electrode of one transistor 60205 is electrically connected to the gate electrode of the third transistor 60207. Note that the gate electrode of the first transistor 60205 includes a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60205 can be reduced.

The gate electrode of the second transistor 60206 is electrically connected to the third wiring 60203, and one of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the fourth wiring 60204, and The other of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the gate electrode of the third transistor 60207. Note that the gate electrode of the second transistor 60206 includes a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60206 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60207 is connected to the fourth wiring 60.
204, and the other of the source electrode and the drain electrode of the third transistor 60207 is electrically connected to the pixel electrode 60208. Thus, the current flowing through the pixel electrode 60208 can be controlled by the third transistor 60207.

An organic conductor film 60212 is provided on the pixel electrode 60208, and an organic thin film 602 is further provided.
13 (organic compound layer) is provided. On the organic thin film 60213 (organic compound layer),
A counter electrode 60214 is provided. Note that the counter electrode 60214 may be formed in a solid form so as to be commonly connected to all pixels, or may be formed in a pattern using a shadow mask or the like.

Light emitted from the organic thin film 60213 (organic compound layer) is transmitted through either the pixel electrode 60208 or the counter electrode 60214.

In FIG. 103B, the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is called bottom emission, and the case where light is emitted to the counter electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60208 is preferably formed using a transparent conductive film.
Conversely, in the case of top emission, the counter electrode 60214 is preferably formed using a transparent conductive film.

In a light emitting device for color display, EL elements having emission colors of R, G, and B may be applied separately, or a monochrome EL element is applied in a solid form, and R, G, and B are applied by color filters.
B light emission may be obtained.

Note that the configuration illustrated in FIG. 103 is merely an example, and various configurations other than the configuration illustrated in FIG. 103 can be taken with respect to the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. For the light emitting layer, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used in addition to the element composed of the illustrated organic thin film.

FIG. 104A is an example of a top view (layout diagram) of a pixel having four transistors in one pixel. FIG. 104B is an example of a cross-sectional view taken along the line XX ′ shown in FIG.

104A illustrates a substrate 60300, a first wiring 60301, a second wiring 60302, a third wiring 60303, a fourth wiring 60304, a first transistor 60305, a second transistor 60306, and a third transistor. 60307, fourth transistor 60308
, Pixel electrode 60309, fifth wiring 60311, sixth wiring 60312, partition wall 60321
, An organic conductor film 60322, an organic thin film 60323, and a counter electrode 60324 are shown.
Note that the first wiring 60301 is used as a source signal line, the second wiring 60302 is used as a writing gate signal line, the third wiring 60303 is used as an erasing gate signal line, and a fourth wiring 603 is used.
04 is a reverse bias signal line, the first transistor 60305 is a switching transistor, the second transistor 60306 is an erase transistor,
The transistor 60307 of the fourth transistor 60308 serves as a driving transistor.
Is preferably used as a reverse bias transistor, the fifth wiring 60311 as a current supply line, and the sixth wiring 60312 as a reverse bias power supply line.

The gate electrode of the first transistor 60305 is electrically connected to the second wiring 60302, and one of the source electrode and the drain electrode of the first transistor 60305 is electrically connected to the first wiring 60301, and The other of the source electrode and the drain electrode of one transistor 60305 is electrically connected to the gate electrode of the third transistor 60307. Note that the gate electrode of the first transistor 60305 includes a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60305 can be reduced.

The gate electrode of the second transistor 60306 is electrically connected to the third wiring 60303. One of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the fifth wiring 60311. The other of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the gate electrode of the third transistor 60307. Note that the gate electrode of the second transistor 60306 includes a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60306 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60307 is connected to the fifth wiring 60.
The other of the source electrode and the drain electrode of the third transistor 60307 is electrically connected to the pixel electrode 60309. Thus, the current flowing through the pixel electrode 60309 can be controlled by the third transistor 60307.

A gate electrode of the fourth transistor 60308 is electrically connected to the fourth wiring 60304. One of a source electrode and a drain electrode of the fourth transistor 60308 is electrically connected to the sixth wiring 60312, and The other of the source electrode and the drain electrode of the fourth transistor 60308 is electrically connected to the pixel electrode 60309. In this manner, the potential of the pixel electrode 60309 can be controlled by the fourth transistor 60308, and thus a reverse bias can be applied to the organic conductor film 60322 and the organic thin film 60323. By applying a reverse bias to a light-emitting element including the organic conductor film 60322, the organic thin film 60323, and the like, the reliability of the light-emitting element can be greatly improved.

An organic conductor film 60322 is provided on the pixel electrode 60309, and an organic thin film 603 is further provided.
23 (organic compound layer) is provided. On the organic thin film 60323 (organic compound layer),
A counter electrode 60324 is provided. Note that the counter electrode 60324 may be formed in a solid form so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60323 (organic compound layer) is transmitted through either the pixel electrode 60309 or the counter electrode 60324.

In FIG. 104B, the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is called bottom emission, and the case where light is emitted to the counter electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60309 is preferably formed using a transparent conductive film.
On the other hand, in the case of top emission, the counter electrode 60324 is preferably formed using a transparent conductive film.

In a light emitting device for color display, EL elements having emission colors of R, G, and B may be applied separately, or a monochrome EL element is applied in a solid form, and R, G, and B are applied by color filters.
B light emission may be obtained.

Note that the configuration illustrated in FIG. 104 is merely an example, and various configurations other than the configuration illustrated in FIG. 104 can be employed with respect to the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. For the light emitting layer, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used in addition to the element composed of the illustrated organic thin film.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 14)
In this embodiment, the structure of an EL element will be described. In particular, the structure of the organic EL element will be described.

The structure of the mixed junction type EL element will be described. For example, a hole injection layer made of a hole injection material, a hole transport layer made of a hole transport material, a light emitting layer made of a light emitting material, an electron transport layer made of an electron transport material, an electron injection layer made of an electron injection material Is a layered structure in which a plurality of materials are mixed among materials such as a hole injection material, a hole transport material, a light emitting material, an electron transport material, and an electron injection material. A structure having a mixed layer (hereinafter referred to as a mixed junction type EL element) will be described.

105A, 105B, 105C, and 105D are schematic views showing the structure of a mixed junction type EL element. Note that a layer sandwiched between the anode 190101 and the cathode 190102 corresponds to an EL layer.

In FIG. 105A, the EL layer includes a hole transport region 190103 made of a hole transport material and an electron transport region 190104 made of an electron transport material, and the hole transport region 190103 is on the anode side with respect to the electron transport region 190104. And a mixed region 190 including both a hole transport material and an electron transport material between the hole transport region 190103 and the electron transport region 190104.
The structure in which 105 is provided is shown.

Note that in the direction from the anode 190101 to the cathode 190102, the concentration of the hole transport material in the mixed region 190105 decreases and the concentration of the electron transport material in the mixed region 190105 increases.

The method of setting the concentration gradient can be freely set. For example, the hole transport region 190103 made only of the hole transport material does not exist, and the concentration ratio of each functional material changes inside the mixed region 190105 including both the hole transport material and the electron transport material (the concentration gradient is changed). It may have a configuration. Alternatively, the hole transport region 190 made of only the hole transport material 190
103 and the electron transport region 190104 consisting only of the electron transport material does not exist, and the ratio of the concentration of each functional material changes (has a concentration gradient) inside the mixed region 190105 including both the hole transport material and the electron transport material. It may be a configuration. Alternatively, the concentration ratio may be changed depending on the distance from the anode or the cathode. The change in the concentration ratio may be continuous.

In the mixed region 190105, a region 190106 to which a light-emitting material is added is provided. The emission color of the EL element can be controlled by the light emitting material. Carriers can be trapped by the light emitting material. As the light emitting material, various fluorescent dyes can be used in addition to a metal complex including a quinoline skeleton, a metal complex including a benzoxador skeleton, a metal complex including a benzothiazol skeleton, and the like. By adding these light emitting materials, the light emission color of the EL element can be controlled.

As the anode 190101, an electrode material having a high work function is preferably used in order to inject holes efficiently. For example, a transparent electrode such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), ZnO, SnO _2, or In ₂ O ₃ can be used. Alternatively, if it is not necessary to have a light-transmitting property, the anode 190101 may be an opaque metal material.

An aromatic amine compound or the like can be used as the hole transport material.

As an electron transport material, a quinoline derivative, a metal complex having 8-quinolinol or a derivative thereof as a ligand (particularly, tris (8-quinolinolite) aluminum (Alq ₃ )) or the like can be used.

As the cathode 190102, an electrode material having a low work function is preferably used in order to inject electrons efficiently. A single metal such as aluminum, indium, magnesium, silver, calcium, barium, or lithium can be used. Or the alloy of these metals may be sufficient and the alloy of these metals and another metal may be sufficient.

FIG. 105B shows a schematic diagram of an EL element having a structure different from that in FIG. In addition, FIG.
The same portions as 05 (A) are denoted by the same reference numerals and description thereof is omitted.

In FIG. 105B, there is no region to which the light-emitting material is added. However, the electron transport region 19
As a material to be added to 0104, a material having both electron transporting properties and light emitting properties (electron transporting light emitting material), for example, tris (8-quinolinolite) aluminum (Alq ₃ ) can be used for light emission.

Alternatively, as a material added to the hole-transport region 190103, a material having both hole-transport properties and light-emitting properties (hole-transport light-emitting material) may be used.

A schematic diagram of an EL element having a structure different from those in FIGS. 105A and 105B is shown in FIG.
Shown in Note that the same portions as those in FIGS. 105A and 105B are denoted by the same reference numerals,
Description is omitted.

In FIG. 105C, a hole blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital than the hole transporting material has a region 190107 added in the mixed region 190105. . The region 190107 to which the hole blocking material is added is changed from the region 190106 in the mixed region 190105 to which the light emitting material is added to the cathode 19010.
By disposing on the second side, the carrier recombination rate can be increased and the luminous efficiency can be increased. The above-described structure in which the region 190107 to which a hole blocking material is added is provided is particularly effective in an EL element using light emission (phosphorescence) by triple photoexcitons.

A schematic diagram of an EL element having a structure different from those in FIGS. 105A, 105B, and 105C is illustrated in FIG. Note that the same portions as those in FIGS. 105A, 105B, and 105C are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 105D, an electron blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital than the electron transporting material has a region 190108 added in the mixed region 190105. The region 190108 to which the electron blocking material is added is changed from the region 190106 in the mixed region 190105 to which the light emitting material is added to the anode 19010.
By disposing on the first side, the carrier recombination rate can be increased and the luminous efficiency can be increased. The above-described structure in which the region 190108 to which an electron blocking material is added is provided is particularly effective in an EL element using light emission (phosphorescence) by triple photoexcitons.

FIG. 105 (E) is the same as FIG. 105 (A), FIG. 105 (B), FIG. 105 (C), and FIG.
FIG. 3 is a schematic view showing a configuration of a mixed junction type EL element different from FIG. In FIG. 105 (E), E
An example of a structure in which a region 190109 to which a metal material is added is provided in the portion of the EL layer that is in contact with the electrode of the L element is shown. In FIG. 105E, the same portions as those in FIGS. 105A to 105D are denoted by the same reference numerals and description thereof is omitted. The structure shown in FIG. 105 (E) is, for example, the cathode 1
A structure may be employed in which MgAg (Mg—Ag alloy) is used as 90102 and the region 190109 to which an Al (aluminum) alloy is added is in contact with the cathode 190102 in the electron transport region 190104 to which an electron transport material is added. With the above structure, oxidation of the cathode can be prevented and the efficiency of electron injection from the cathode can be increased. Thus, the life of the mixed junction type EL element can be extended. The driving voltage can also be lowered.

As a method of manufacturing the mixed junction type EL element, a co-evaporation method or the like can be used.

In the mixed-junction EL element as shown in FIGS. 105A to 105E, there is no clear layer interface, and charge accumulation can be reduced. In this way, the lifetime can be extended. The driving voltage can also be lowered.

Note that the structures illustrated in FIGS. 105A to 105E can be implemented in any combination.

Note that the structure of the mixed junction EL element is not limited thereto. A known configuration can be used freely.

Note that the organic material constituting the EL layer of the EL element may be a low molecular material or a high molecular material. Alternatively, both of these materials may be used. When a low molecular material is used as the organic compound material, the film can be formed by an evaporation method. On the other hand, in the case of using a polymer material for the EL layer, the polymer material can be dissolved in a solvent and formed into a film by a spin coating method or an inkjet method.

The EL layer may be made of a medium molecular material. In the present specification, the medium molecular organic light-emitting material refers to an organic light-emitting material having no sublimation property and having a degree of polymerization of about 20 or less. In the case where a medium molecular material is used for the EL layer, it can be formed by an inkjet method or the like.

Note that a low molecular material, a high molecular material, and a medium molecular material may be used in combination.

The EL element may be either one that uses light emission (fluorescence) from singlet excitons or one that uses light emission (phosphorescence) from triplet excitons.

Next, a vapor deposition apparatus for manufacturing a display device will be described with reference to the drawings.

The display device may be manufactured by forming an EL layer. The EL layer is formed including at least part of a material that exhibits electroluminescence. The EL layer may be composed of a plurality of layers having different functions. In that case, the EL layer may be configured by combining layers having different functions called a hole injecting and transporting layer, a light emitting layer, and an electron injecting and transporting layer.

FIG. 10 shows a configuration of a vapor deposition apparatus for forming an EL layer on an element substrate over which a transistor is formed.
It is shown in FIG. In this vapor deposition apparatus, a plurality of processing chambers are connected to transfer chambers 190260 and 190261. The processing chamber includes a load chamber 190262 for supplying a substrate, an unload chamber 190263 for recovering the substrate, a heat treatment chamber 190268, a plasma processing chamber 190272, and an EL.
As film formation processing chambers 190269 to 190275 for vapor deposition of materials and one electrode of the EL element,
A film formation treatment chamber 1902 for forming aluminum or a conductive film containing aluminum as a main component
76 is included. Gate valves 190277a to 19027 are provided between the transfer chamber and each processing chamber.
7 m is provided, and the pressure in each processing chamber can be controlled independently, thereby preventing cross-contamination between the processing chambers.

The substrate introduced into the transfer chamber 190260 from the load chamber 190262 is carried into a predetermined processing chamber by arm-type transfer means 190266 that is rotatably provided. The substrate is transferred from one processing chamber to another processing chamber by the transfer means 190266. The transfer chamber 190260 and the transfer chamber 190261 are connected by a film formation processing chamber 190270, and here, the transfer unit 19026 is connected.
6 and the transfer means 190267 deliver the substrate.

Each processing chamber connected to the transfer chamber 190260 and the transfer chamber 190261 is held in a reduced pressure state. Therefore, in this vapor deposition apparatus, the substrate is continuously subjected to film formation of the EL layer without being exposed to the atmosphere. Since the display panel after the EL layer deposition process may be deteriorated by water vapor or the like, in this vapor deposition apparatus, a sealing process for performing a sealing process before exposure to the atmosphere in order to maintain the quality. A chamber 190265 is connected to the transfer chamber 190261. Since the sealing treatment chamber 190265 is placed under atmospheric pressure or a reduced pressure close thereto, the transfer chamber 1902
An intermediate processing chamber 190264 is also provided between 61 and the sealing processing chamber 190265. The intermediate processing chamber 190264 is provided for transferring the substrate and buffering the pressure between the chambers.

The load chamber, the unload chamber, the transfer chamber, and the film forming chamber are provided with exhaust means for maintaining the chamber at a reduced pressure. As the exhaust means, various vacuum pumps such as a dry pump, a turbo molecular pump, and a diffusion pump can be used.

106, the number of processing chambers connected to the transfer chamber 190260 and the transfer chamber 190261 and the structure thereof can be combined as appropriate depending on the stacked structure of the EL elements. An example of the combination is shown below.

In the heat treatment chamber 190268, degassing treatment is performed by first heating the substrate on which the lower electrode, the insulating partition wall, or the like is formed. The plasma treatment chamber 190272 performs rare gas or oxygen plasma treatment on the surface of the base electrode. This plasma treatment is performed to clean the surface, stabilize the surface state, and stabilize the physical or chemical state (eg, work function) of the surface.

The film formation treatment chamber 190269 is a treatment chamber for forming an electrode buffer layer in contact with one electrode of the EL element. The electrode buffer layer has carrier injection properties (hole injection or electron injection),
It is a layer that suppresses the occurrence of short circuits or dark spot defects in EL elements. Typically, the electrode buffer layer is an organic-inorganic mixed material, and has a resistivity of 5 × 10 ⁴ to 1 × 10 ⁶ Ωcm, and 30 to 3
It is formed to a thickness of 00 nm. Note that the film formation chamber 190271 is a treatment chamber in which a hole transport layer is formed.

The structure of the light emitting layer in the EL element differs depending on whether the light emission is monochromatic or white. In the vapor deposition apparatus, it is preferable to arrange the film forming treatment chamber accordingly. For example,
When three types of EL elements having different emission colors are formed on the display panel, it is necessary to form a light emitting layer corresponding to each emission color. In this case, the film formation chamber 190270 is used for forming the first light-emitting layer, and the film formation chamber 190273 is used for forming the second light-emitting layer.
74 can be used for forming the third light-emitting layer. By separating the film formation chamber for each light emitting layer, mutual contamination by different light emitting materials can be prevented, and the throughput of the film formation process can be improved.

Note that three types of EL materials having different emission colors may be sequentially deposited in the film formation chamber 190270, the film formation chamber 190273, and the film formation chamber 190274. In this case, a shadow mask is used, and vapor deposition is performed by shifting the mask in accordance with the region to be vapor deposited.

In the case of forming an EL element that emits white light, light emitting layers having different light emission colors are stacked vertically. Also in that case, the element substrate can be sequentially moved through the film formation chamber to form a film for each light emitting layer. Alternatively, different light emitting layers can be successively formed in the same film formation chamber.

In the deposition treatment chamber 190276, an electrode is deposited over the EL layer. The electrode can be formed by an electron beam evaporation method or a sputtering method, but a resistance heating evaporation method is preferably used.

After the formation of the electrodes, the element substrate passes through the intermediate processing chamber 190264 and the sealing processing chamber 1902.
It is carried into 65. The sealing treatment chamber 190265 is filled with an inert gas such as helium, argon, neon, or nitrogen, and a sealing plate is attached to the element substrate on the side where the EL layer is formed and sealed. Stop. In a sealed state, an inert gas may be filled between the element substrate and the sealing plate, or a resin material may be filled. The sealing processing chamber 190265 includes a dispenser for drawing a sealing material, a mechanical element such as a fixed stage or an arm for fixing a sealing plate facing the element substrate, a dispenser for filling a resin material, or a spin coater. It has been.

FIG. 107 shows the internal structure of the film forming chamber. The film formation chamber is kept under reduced pressure, and FIG.
7, the inside between the top plate 190391 and the bottom plate 190392 is a room, and the room is kept in a reduced pressure state.

One or a plurality of evaporation sources are provided in the processing chamber. This is because it is preferable to provide a plurality of evaporation sources when a plurality of layers having different compositions are formed or when different materials are co-evaporated. In FIG. 107, the evaporation sources 190381a, 190381b, and 190381c are attached to the evaporation source holder 190380. The evaporation source holder 190380 is held by an articulated arm 190383. The articulated arm 190383 can freely move the position of the evaporation source holder 190380 within the movable range by expansion and contraction of the joint. Alternatively, the evaporation source holder 190380 is provided with a distance sensor 190382, and the evaporation source 19038 is provided.
The distance between 1a to 190381c and the substrate 190389 may be monitored to control the optimum distance during vapor deposition. In that case, it is good also as an articulated arm which displaces to an articulated arm also in the up-down direction (Z direction).

A substrate stage 190386 and a substrate chuck 190387 are paired to form a substrate 190389.
To fix. The substrate stage 190386 may include a heater so that the substrate 190389 can be heated. The substrate 190389 is fixed to the substrate stage 190386 and carried in and out by the forcible relaxation of the substrate chuck 190387. In vapor deposition, a shadow mask 190390 having an opening corresponding to a vapor deposition pattern can be used as necessary. In that case, the shadow mask 190390 includes the substrate 190389 and the evaporation source 19.
It is arranged between 0381a and 190381c. Shadow mask 190390
Is fixed to the substrate 190389 in close contact with the mask chuck 190388 or at a fixed interval. When the shadow mask 190390 needs to be aligned, the camera is disposed in the processing chamber, and the mask chuck 190388 is provided with positioning means that finely moves in the XY-θ direction, thereby aligning the shadow mask 190390.

The evaporation source 190381 is provided with a deposition material supply means for continuously supplying a deposition material to the evaporation source. The vapor deposition material supply means includes material supply sources 190385a, 190385b, and 190385c arranged at positions distant from the evaporation source 190381, and a material supply pipe 190384 connecting the two. Typically, material sources 190385a, 190385b
, 190385c are provided corresponding to the evaporation source 190381. In the case of FIG.
The material supply source 190385a and the evaporation source 190381a correspond to each other. Material source 1903
The same applies to 85b and the evaporation source 190381b, and the material supply source 190385c and the evaporation source 190381c.

As an evaporation material supply method, an air current conveyance method, an aerosol method, or the like can be applied. In the air current conveyance method, fine powder of vapor deposition material is carried in an air current and is conveyed to the evaporation source 190381 using an inert gas or the like. The aerosol method is vapor deposition performed by conveying a raw material solution in which a vapor deposition material is dissolved or dispersed in a solvent, aerosolizing it with a sprayer, and vaporizing the solvent in the aerosol. In any case, the evaporation source 190381 is provided with a heating unit, and the conveyed evaporation material is evaporated to form a film on the substrate 190389. In the case of FIG. 107, the material supply pipe 19
[0384] 0384 can be bent flexibly, and is composed of a thin tube having rigidity that does not deform even under reduced pressure.

In the case of applying an air current conveyance method or an aerosol method, the film formation may be performed under a reduced pressure of 133 Pa to 13300 Pa in the film formation treatment chamber at atmospheric pressure or lower.
The film formation chamber can be filled with an inert gas such as helium, argon, neon, krypton, xenon, or nitrogen, or the pressure can be adjusted while supplying the gas (while exhausting simultaneously). Note that in the deposition treatment chamber in which the oxide film is formed, a gas such as oxygen or nitrous oxide may be introduced to form an oxidizing atmosphere. Alternatively, a reducing atmosphere may be provided by introducing a gas such as hydrogen into a film formation chamber in which an organic material is deposited.

As another vapor deposition material supply method, a screw may be provided in the material supply pipe 190384 to continuously extrude the vapor deposition material toward the evaporation source.

According to this vapor deposition apparatus, even a large-screen display panel can be continuously formed with good uniformity. Since it is not necessary to replenish the vapor deposition material each time the vapor deposition material runs out of the evaporation source, the throughput can be improved.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 15)
In this embodiment, the structure of an EL element will be described. In particular, the structure of the inorganic EL element will be described.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of luminescent material, but is accelerated by a high electric field. This is common in that it requires more electrons. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. Generally, in the dispersion type inorganic EL, a donor-
In many cases, acceptor recombination light emission and thin-film inorganic EL elements emit localized light.

The light-emitting material includes a base material and an impurity element serving as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method or a liquid phase method (coprecipitation method) can be used. Alternatively, a spray pyrolysis method, a metathesis method, a precursor thermal decomposition method, a reverse micelle method or a method combining these methods with high temperature firing, a liquid phase method such as a freeze drying method, or the like can also be used.

In the solid phase method, a base material and an impurity element or a compound containing an impurity element are weighed and mixed in a mortar.
This is a method in which an impurity element is contained in the base material by reacting by heating and baking in an electric furnace. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for the light-emitting material, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. Examples of the nitride include aluminum nitride (AlN), gallium nitride (GaN),
Indium nitride (InN) or the like can be used. Furthermore, zinc selenide (ZnSe)
, Zinc telluride (ZnTe) and the like can also be used, such as calcium sulfide-gallium (CaG
It may be a ternary mixed crystal such as a ₂ S ₄ ), strontium sulfide-gallium sulfide (SrGa ₂ S ₄ ), or barium sulfide-gallium sulfide (BaGa ₂ S ₄ ).

As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

On the other hand, as a light emission center of donor-acceptor recombination light emission, a first donor level is formed.
And a light-emitting material including a second impurity element which forms an acceptor level. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. As the second impurity element, for example, copper (Cu),
Silver (Ag) or the like can be used.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element
Each of the compounds containing the impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) or the like, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) or the like can be used. The firing temperature is preferably 700 to 1500 ° C.
This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

As an impurity element in the case of using a solid phase reaction, a compound composed of a first impurity element and a second impurity element may be used in combination. In this case, the impurity element is easily diffused,
Since the solid-phase reaction easily proceeds, a uniform luminescent material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. Examples of the compound composed of the first impurity element and the second impurity element include copper chloride (CuCl), silver chloride (
AgCl) or the like can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

In the case of a thin film type inorganic EL, the electroluminescent layer is a layer containing the light emitting material,
Vacuum vapor deposition methods such as electron beam evaporation (EB vapor deposition), physical vapor deposition methods such as sputtering (
Chemical vapor deposition (CV) such as PVD), metal organic chemical vapor deposition, hydride transport low pressure CVD
D), an atomic epitaxy method (ALE), or the like.

108A to 108C illustrate an example of a thin-film inorganic EL element that can be used as a light-emitting element. 108A to 108C, the light-emitting element includes the first electrode layer 120100.
, An electroluminescent layer 120102, and a second electrode layer 120103.

A light-emitting element illustrated in FIGS. 108B and 108C has a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. A light-emitting element illustrated in FIG. 108B includes an insulating film 120104 between the first electrode layer 120100 and the electroluminescent layer 120102, and the light-emitting element illustrated in FIG. 108C includes the first electrode layer 120100. And electroluminescent layer 120
102, an insulating film 120105, a second electrode layer 120103, and an electroluminescent layer 12010
2 and an insulating film 120106. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a stacked layer having a plurality of layers.

Note that in FIG. 108B, the insulating film 120104 is in contact with the first electrode layer 120100.
The second electrode layer 120103 is formed by reversing the order of the insulating film and the electroluminescent layer.
An insulating film 120104 may be provided in contact with the insulating film 120104.

In the case of a dispersion-type inorganic EL, a particulate luminescent material is dispersed in a binder to form a film-like electroluminescent layer. Process into particles. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. What is a binder?
It is a substance for fixing a granular luminescent material in a dispersed state and maintaining the shape as an electroluminescent layer. The light emitting material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

In the case of a dispersion-type inorganic EL, the electroluminescent layer can be formed by a droplet discharge method that can selectively form an electroluminescent layer, a printing method (such as screen printing or offset printing), a coating method such as a spin coating method, or dipping. It is also possible to use a method or a dispenser method. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the electroluminescent layer including the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

FIGS. 109A to 109C illustrate an example of a dispersion-type inorganic EL element that can be used as a light-emitting element. A light-emitting element in FIG. 109A has a stacked structure of a first electrode layer 120200, an electroluminescent layer 120202, and a second electrode layer 120203, and a light-emitting material 120201 held by a binder in the electroluminescent layer 120202. Including.

An insulating material can be used for the binder. As the insulating material, an organic material or an inorganic material can be used. Alternatively, a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant, such as cyanoethyl cellulose resin, polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide or polybenzimidazole, or a siloxane resin may be used. Note that the siloxane resin is Si-O-.
It corresponds to a resin containing Si bonds. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Or
Resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. These resins include barium titanate (B
The dielectric constant can be adjusted by appropriately mixing fine particles having a high dielectric constant such as aTiO ₃ ) or strontium titanate (SrTiO ₃ ).

Examples of the inorganic insulating material contained in the binder include silicon oxide (SiOx) and silicon nitride (SiNx).
), Silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, aluminum oxide containing oxygen and nitrogen (Al ₂ O ₃ ), titanium oxide (TiO ₂ )
, BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KN)
bO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y
₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS, and other materials including inorganic insulating materials. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the electroluminescent layer made of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. .

In the manufacturing process, the light-emitting material is dispersed in a solution containing a binder. As a solvent for the solution containing the binder, a method for forming the electroluminescent layer by dissolving the binder material (various wet processes) and a solvent capable of producing a solution having a viscosity suitable for a desired film thickness may be appropriately selected. . For example, an organic solvent or the like can be used as the solvent. When a siloxane resin is used as the binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB), or the like can be used as a solvent.

The light-emitting element illustrated in FIGS. 109B and 109C has a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. 109A. A light-emitting element illustrated in FIG. 109B includes an insulating film 120204 between the first electrode layer 120200 and the electroluminescent layer 120202, and the light-emitting element illustrated in FIG. 109C includes the first electrode layer 120200. And electroluminescent layer 120
202 between the insulating film 120205, the second electrode layer 120203, and the electroluminescent layer 12020.
2 and an insulating film 120206. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a stacked layer including a plurality of layers.

In FIG. 109B, the insulating film 120204 is provided so as to be in contact with the first electrode layer 120200; however, the order of the insulating film and the electroluminescent layer is reversed so that the insulating film 120204 is in contact with the second electrode layer 120203. A film 120204 may be provided.

A material that can be used for the insulating film such as the insulating film 120104 in FIG. 108 and the insulating film 120204 in FIG. 109 preferably has high insulation resistance and a dense film quality.
Furthermore, it is preferable that the dielectric constant is high. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTi
O ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., or a mixed film thereof or two or more kinds of laminated films Can be used. These insulating films can be formed by sputtering, vapor deposition, CVD, or the like. The insulating film may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but preferably 10 to 10
The range is 1000 nm.

Note that the light-emitting element can emit light by applying a voltage between a pair of electrode layers sandwiching the electroluminescent layer, but can operate in either DC driving or AC driving.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 16)
In this embodiment, an example of a display device, particularly a case where optical handling is performed will be described.

110A and 110B includes a projector unit 130111, a mirror 130112, and a screen panel 130101.
In addition, a speaker 130102 and operation switches 130104 may be provided. The projector unit 130111 includes a housing 130 of the rear projection display device 130100.
The projection light which is arrange | positioned under 110 and projects an image | video based on a video signal is mirror 13011.
Project toward 2 The rear projection display device 130100 includes a screen panel 130101.
It is the structure which displays the image | video projected from the back.

On the other hand, FIG. 111 shows a front projection display device 130200. The front projection display device 130200 includes a projector unit 130111 and a projection optical system 130201. The projection optical system 130201 is configured to project an image on a screen or the like disposed on the front surface.

110 is a rear projection display device 130100, and FIG. 111 is a front projection display device 1.
A configuration of the projector unit 130111 applied to the 30200 will be described below.

FIG. 112 shows a configuration example of the projector unit 130111. The projector unit 130111 includes a light source unit 130301 and a modulation unit 130304.
It has. The light source unit 130301 includes a light source optical system 1 including lenses.
30303 and a light source lamp 130302. The light source lamp 130302 is housed in the housing so that stray light does not diffuse. As the light source lamp 130302, for example, a high-pressure mercury lamp or a xenon lamp that can emit a large amount of light is used. The light source optical system 130303 is configured by appropriately providing an optical lens, a film having a polarization function, a film for adjusting a phase difference, an IR film, and the like. The light source unit 130301
Are arranged such that the emitted light is incident on the modulation unit 130304. The modulation unit 130304 includes a plurality of display panels 130308, a color filter, a dichroic mirror 130305, a total reflection mirror 130306, a prism 130309, and the projection optical system 13.
0310. Light emitted from the light source unit 130301 is separated into a plurality of optical paths by the dichroic mirror 130305.

Each optical path is provided with a color filter that transmits light of a predetermined wavelength or wavelength band, and a display panel 130308. A transmissive display panel 130308 modulates transmitted light based on a video signal. The light of each color transmitted through the display panel 130308 is reflected by the prism 130.
An image is displayed on the screen through the projection optical system 130310. A Fresnel lens may be disposed between the mirror and the screen. The projection light projected by the projector unit 130111 and reflected by the mirror is converted into substantially parallel light by the Fresnel lens and projected onto the screen.

A projector unit 130111 shown in FIG. 113 includes a reflective display panel 130407,
The structure provided with 130408 and 130409 is shown.

A projector unit 130111 shown in FIG. 113 includes a light source unit 130301 and a modulation unit 130400. The light source unit 130301 may have the same configuration as that in FIG. The light from the light source unit 130301 is emitted from the dichroic mirror 130.
The light beams are divided into a plurality of optical paths by 401, 130402, and a total reflection mirror 130403, and enter the polarization beam splitters 130404, 130405, and 130406. The polarizing beam splitters 130404, 130405, and 130406 are provided corresponding to the reflective display panels 130407, 130408, and 130409 corresponding to the respective colors. The reflective display panels 130407, 130408, and 130409 modulate reflected light based on the video signal. The light beams of the respective colors reflected by the reflective display panels 130407, 130408, and 130409 are combined by being incident on the prism 130309 and projected through the projection optical system 13041.

Light emitted from the light source unit 130301 is transmitted through the dichroic mirror 130401 only in the red wavelength region and reflects in the green and blue wavelength regions. Further, the dichroic mirror 130402 reflects only light in the green wavelength region. The light in the red wavelength region that has passed through the dichroic mirror 130401 is reflected by the total reflection mirror 130403,
Light enters the polarization beam splitter 130404, light in the blue wavelength region enters the polarization beam splitter 130405, and light in the green wavelength region enters the polarization beam splitter 130406. The polarization beam splitters 130404, 130405, and 130406 have a function of separating incident light into P-polarized light and S-polarized light, and have a function of transmitting only P-polarized light. The reflective display panels 130407, 130408, and 130409 polarize incident light based on the video signal.

Only S-polarized light corresponding to each color is incident on the reflective display panels 130407, 130408, and 130409 corresponding to the respective colors. Note that the reflective display panels 130407, 130408,
130409 may be a liquid crystal panel. At this time, the liquid crystal panel operates in an electric field controlled birefringence mode (ECB). The liquid crystal molecules are vertically aligned with a certain angle with respect to the substrate. Accordingly, the display molecules of the reflective display panels 130407, 130408, and 130409 are oriented so that they are reflected without changing the polarization state of incident light when the pixel is in the off state. When the pixel is in the on state, the orientation state of the display molecules changes and the polarization state of incident light changes.

113 can be applied to the rear projection display device 130100 shown in FIG. 110 and the front projection display device 130200 shown in FIG.

The projector unit shown in FIG. 114 has a single-plate configuration. A projector unit 130111 shown in FIG. 114A includes a light source unit 130301 and a display panel 13.
0507, a projection optical system 130511, and a phase difference plate 130504 are provided. Projection optical system 1
Reference numeral 30511 includes one or a plurality of lenses. The display panel 130507 may be provided with a color filter.

FIG. 114B shows a projector unit 13 that operates in a field sequential manner.
The configuration of 0111 is shown. The field sequential method is a method in which light of each color such as red, green, and blue is temporally shifted and sequentially incident on a display panel to perform color display without a color filter. In particular, when combined with a display panel having a high response speed with respect to input signal changes, a high-definition image can be displayed. In FIG. 114 (B), the light source unit 1
A rotary color filter plate 130505 provided with a plurality of color filters such as red, green, and blue is provided between 30301 and the display panel 130508.

A projector unit 130111 shown in FIG. 114C is a color display method.
The structure of the color separation method using a macro lens is shown. In this method, a microlens array 130506 is provided on the light incident side of the display panel 130509, and color display is realized by illuminating light of each color from each direction. The projector unit 130111 that employs this method has a feature that light from the light source unit 130301 can be effectively used because light loss due to the color filter is small. FIG.
The projector unit 130111 shown in (C) includes a dichroic mirror 130501, a dichroic mirror 130502, and a dichroic mirror for red light 130503 so as to illuminate the display panel 130509 with light of each color from each direction.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 17)
In this embodiment, an example of an electronic device will be described.

FIG. 115 shows a display panel module in which a display panel 900101 and a circuit board 900111 are combined. A display panel 900101 includes a pixel portion 900102, a scan line driver circuit 900103, and a signal line driver circuit 900104. On the circuit board 900111, for example, a control circuit 900112 and a signal dividing circuit 900113 are formed. The display panel 900101 and the circuit board 900111 are connected by a connection wiring 900114. An FPC or the like can be used for the connection wiring.

In the display panel 900101, a pixel portion 900102 and a part of peripheral driver circuits (a driver circuit having a low operating frequency among the plurality of driver circuits) are formed over a substrate using a transistor, and a part of the peripheral driver circuits (a plurality of peripheral driver circuits) A driver circuit having a high operating frequency) is formed on an IC chip, and the IC chip is formed on a display panel 9001 by COG (Chip On Glass) or the like.
You may implement in 01. Thus, the area of the circuit board 900111 can be reduced, and a small display device can be obtained. Alternatively, the IC chip is TAB (Tape Out).
o Bonding) or a printed circuit board, the display panel 900101 may be mounted. Thus, the area of the display panel 900101 can be reduced, so that a display device with a small frame size can be obtained.

For example, in order to reduce power consumption, a pixel portion is formed using a transistor on a glass substrate, all peripheral drive circuits are formed on an IC chip, and the IC chip is mounted on a display panel by COG or TAB. May be.

A television receiver can be completed using the display panel module illustrated in FIG. FIG. 116 is a block diagram illustrating a main structure of a television receiver. Tuner 9002
01 receives a video signal and an audio signal. The video signal includes a video signal amplification circuit 900202,
A video signal processing circuit 900203 that converts a signal output from the video signal amplifier circuit 900202 into a color signal corresponding to each color of red, green, and blue, and a control circuit 900212 for converting the video signal into input specifications of the drive circuit. It is processed by. Control circuit 9002
12 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 900213 may be provided on the signal line side, and an input digital signal may be divided into m pieces (m is a positive integer) and supplied.

Of the signals received by the tuner 900201, the audio signal is the audio signal amplifier circuit 900205.
The output is supplied to the speaker 900207 via the audio signal processing circuit 900206. The control circuit 900208 receives the receiving station (receiving frequency) and volume control information from the input unit 90.
0209 is received and a signal is transmitted to the tuner 900201 or the audio signal processing circuit 900206.

FIG. 11 shows a television receiver in which a display panel module different from FIG. 116 is incorporated.
7 (A). In FIG. 117A, the display screen 9 housed in the housing 900301.
00302 is formed of a display panel module. Note that the speaker 900303, operation switch 900304, input means 900305, sensor 900306 (force, displacement, position,
Speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness,
An electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared measurement function), a microphone 930307, and the like may be provided as appropriate.

FIG. 117B illustrates a television receiver that can carry only a display wirelessly. A housing 900312 stores a battery and a signal receiver. The battery includes a display portion 900313, a speaker portion 900317, sensors (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, Magnetism, temperature, chemistry, voice, time, hardness, electric field, current,
(Including a function of measuring voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared) 900319 and the microphone 900320 are driven. Battery is charger 9
Charging can be repeated at 00310. The charger 900310 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display.
The device illustrated in FIG. 117B is controlled by an operation key 900316. Alternatively, the device illustrated in FIG. 117B operates the charger 90 by operating the operation key 900316.
It is possible to send a signal to 0310. That is, it may be a video / audio bidirectional communication device. Alternatively, the device illustrated in FIG. 117B operates the operation key 900316 to transmit a signal to the charger 900310 and further cause the other electronic device to receive a signal that can be transmitted by the charger 900310. Communication control of electronic devices is also possible. That is, a general-purpose remote control device may be used. Note that input means 900318 and the like may be provided as appropriate. It should be noted that the contents (or part of them) described in each figure of the present embodiment are displayed on the display unit 90.
0313 can be applied.

FIG. 118A illustrates a module in which a display panel 900401 and a printed wiring board 900402 are combined. A display panel 900401 includes a pixel portion 900403 provided with a plurality of pixels, a first scan line driver circuit 900404, and a second scan line driver circuit 9004.
And a signal line driver circuit 900406 for supplying a video signal to the selected pixel.

A printed wiring board 900402 includes a controller 900407, a central processing unit (CPU
) 940408, memory 900409, power supply circuit 900410, audio processing circuit 90041
1 and a transmission / reception circuit 900412 and the like. The printed wiring board 900402 and the display panel 900401 are connected by a flexible wiring board (FPC) 900413. The flexible wiring board (FPC) 9000041 may be provided with a storage capacitor, a buffer circuit, and the like to prevent generation of noise in the power supply voltage or signal and increase in signal rise time. Note that the controller 9000040, the sound processing circuit 9000041, the memory 9000040, the central processing unit (CPU) 900408, the power supply circuit 900410,
The display panel 900401 can be mounted using a COG (Chip On Glass) method. The scale of the printed wiring board 900402 can be reduced by the COG method.

Interface (I / F) unit 900414 provided on the printed circuit board 900402
Various control signals are input and output via the. An antenna port 900415 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 900402.

FIG. 118B is a block diagram of the module shown in FIG. This module includes a VRAM 900416, a DRAM 9000041, a flash memory 900418, and the like as the memory 900409. The VRAM 900416 stores image data to be displayed on the panel, the DRAM 900417 stores image data or audio data, and the flash memory stores various programs.

The power supply circuit 900410 supplies power for operating the display panel 900401, the controller 900407, the central processing unit (CPU) 9000040, the sound processing circuit 9000041, the memory 9000040, and the transmission / reception circuit 9000041. However, depending on the panel specifications, the power supply circuit 900410 may be provided with a current source.

A central processing unit (CPU) 9000040 includes a control signal generation circuit 900420 and a decoder 90.
0421, a register 900422, an arithmetic circuit 900423, a RAM 900394, an interface (I / F) unit 900419 for a central processing unit (CPU) 9000040, and the like. Central processing unit (CPU) via interface (I / F) unit 900419
Various signals input to 9000040 are temporarily stored in the register 9000042 and then input to the arithmetic circuit 9000042, the decoder 9000042, and the like. The arithmetic circuit 900423 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the decoder 9
The signal input to 00421 is decoded and input to the control signal generation circuit 900420. The control signal generation circuit 900420 generates a signal including various instructions based on the input signal, and a location designated in the arithmetic circuit 9000042, specifically, a memory 9000040,
The data is sent to the transmission / reception circuit 900412, the audio processing circuit 900411, the controller 900407, and the like.

The memory 9000040, the transmission / reception circuit 9000041, the sound processing circuit 9000041, and the controller 900407 operate according to received commands. The operation will be briefly described below.

A signal input from the input unit 9000042 is input to an interface (I / F) unit 90041.
Central processing unit (CPU) 9004 mounted on a printed wiring board 900402 via 4
Sent to 08. The control signal generation circuit 900420 converts the image data stored in the VRAM 900416 into a predetermined format according to the signal sent from the input device 9000042 such as a pointing device or a keyboard, and sends it to the controller 900407.

The controller 900407 is a central processing unit (CPU) 9004 in accordance with the specifications of the panel.
Data processing is performed on a signal including image data sent from 08, and a display panel 90040 is processed.
1 is supplied. Based on the power supply voltage input from the power supply circuit 900410 or various signals input from the central processing unit (CPU) 9000040, the controller 900407
A sync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R are generated and supplied to the display panel 900401.

In the transmission / reception circuit 9000041, a signal transmitted / received as a radio wave in the antenna 9000042 is processed. Specifically, an isolator, a band pass filter, a VCO (Volt)
age Controlled Oscillator), LPF (Low Pass)
A high frequency circuit such as a filter), a coupler, or a balun may be included. Transmission / reception circuit 90
Of the signals transmitted and received in 0412, a signal including audio information is sent to the central processing unit (CPU).
) Is sent to the audio processing circuit 900411 according to the command from 900408.

A signal including audio information sent in accordance with an instruction from the central processing unit (CPU) 9000040 is demodulated into an audio signal by an audio processing circuit 9000041 and sent to a speaker 9000042. The audio signal transmitted from the microphone 9000042 is modulated in the audio processing circuit 9000041 and is transmitted and received in accordance with a command from the central processing unit (CPU) 9000040.
Sent to 00412.

Controller 9000040, central processing unit (CPU) 9000040, power supply circuit 90041
0, the audio processing circuit 900411 and the memory 9000040 can be mounted as a package of this embodiment.

Of course, the present embodiment is not limited to a television receiver, and is used for various applications as a display medium with a particularly large area such as a monitor of a personal computer, an information display board at a railway station or airport, and an advertisement display board in a street. Can be applied.

Next, a configuration example of a mobile phone will be described with reference to FIG.

The display panel 900501 is incorporated in a housing 900530 so as to be detachable. The shape or dimension of the housing 900530 can be changed as appropriate in accordance with the size of the display panel 900501. A housing 900530 to which the display panel 900501 is fixed is fitted into the printed circuit board 900531 and assembled as a module.

The display panel 900501 is connected to the printed circuit board 900531 through the FPC 900531. A printed circuit board 900531 includes a speaker 900532 and a microphone 900.
533, a signal processing circuit 900 including a transmission / reception circuit 900534, a CPU, a controller,
535 and sensor 900541 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, Including a function of measuring humidity, gradient, vibration, odor or infrared). Such a module is combined with the input means 900566 and the battery 900577 and stored in the housing 9000053. The pixel portion of the display panel 900501 is a housing 9000053.
It arrange | positions so that it can visually recognize from the opening window formed in.

In the display panel 900501, a pixel portion and some peripheral driver circuits (a driver circuit having a low operating frequency among a plurality of driver circuits) are formed over a substrate using transistors, and some peripheral driver circuits (a plurality of driver circuits) are formed. The driving circuit having a high operating frequency is formed on the IC chip, and the IC
The chip may be mounted on the display panel 900501 by COG (Chip On Glass). Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Auto Bonding) or a printed circuit board. With such a structure, the power consumption of the display device can be reduced, and the usage time by one charge of the mobile phone can be extended. Cost reduction of the mobile phone can be achieved.

The mobile phone shown in FIG. 119 has a function of displaying various information (still images, moving images, text images, and the like). It has a function of displaying a calendar, date or time on the display unit. It has a function of operating or editing information displayed on the display unit. Various software (programs)
Has a function of controlling the process. Has a wireless communication function. It has a function of making a call with another mobile phone, a fixed phone, or a voice communication device using a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. The vibrator operates in response to an incoming call, data reception, or alarm. It has a function to generate a sound in response to an incoming call, reception of data, or an alarm. Note that the function of the mobile phone illustrated in FIG. 119 is not limited thereto, and the mobile phone can have various functions.

A cellular phone shown in FIG. 120 includes operation switches 9000060 and a microphone 90060.
5 and the like (A) 900601, a display panel (A) 900068, a display panel (B) 900609, a speaker 9000060, and a sensor 90000601 (force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, Light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared, etc.), input means 900612, etc. (B) 9000060 provided with
Are connected by a hinge 900610 so as to be openable and closable. The display panel (A) 900608 and the display panel (B) 900609 are composed of a main body (B) 9000060 together with a circuit board 9000060.
Is housed in the casing 900603. Display panel (A) 900608 and display panel (
B) The pixel portion of 900609 is arranged so as to be visible from an opening window formed in the housing 900603.

The display panel (A) 900608 and the display panel (B) 900609
Specifications such as the number of pixels can be set as appropriate in accordance with the 0600 function. For example, the display panel (A) 900608 can be combined as a main screen and the display panel (B) 900609 can be combined as a sub-screen.

The mobile phone according to the present embodiment can be transformed into various modes depending on the function or application. For example, a mobile phone with a camera may be provided by incorporating an image sensor at the hinge 900610. Even when the operation switches 9000060, the display panel (A) 900068, and the display panel (B) 900609 are housed in one housing, the above-described effects can be obtained. Even if the configuration of the present embodiment is applied to an information display terminal having a plurality of display units, the same effect can be obtained.

The mobile phone shown in FIG. 120 has a function of displaying various information (still images, moving images, text images, and the like). It has a function of displaying a calendar, date or time on the display unit. It has a function of operating or editing information displayed on the display unit. Various software (programs)
Has a function of controlling the process. Has a wireless communication function. It has a function of making a call with another mobile phone, a fixed phone, or a voice communication device using a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. The vibrator operates in response to an incoming call, data reception, or alarm. It has a function to generate a sound in response to an incoming call, reception of data, or an alarm. Note that the function of the mobile phone shown in FIG. 120 is not limited to this, and the mobile phone can have various functions.

The contents (or part of them) described in each drawing of this embodiment can be applied to various electronic devices. Specifically, it can be applied to a display portion of an electronic device. Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games) Machine or e-book)
, An image reproducing apparatus provided with a recording medium (specifically, Digital Versatile D
for example, a device provided with a display capable of reproducing a recording medium such as an isc (DVD) and displaying the image.

FIG. 121A shows a display, a housing 900711, a support base 900712, a display portion 900713, input means 900714, sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism). Including functions for measuring temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared) 9
0071, microphone 900716, speaker 900717, operation key 90071
8, LED lamp 900719 and the like. The display illustrated in FIG. 121A has a function of displaying various information (still images, moving images, text images, and the like) on the display portion. In addition, FIG.
The function of the display illustrated in FIG. 21A is not limited to this, and the display can have various functions.

FIG. 121B illustrates a camera, which includes a main body 900731, a display portion 900732, and an image receiving portion 900.
733, operation keys 900734, external connection port 900735, shutter 900736
, Input means 900737, sensor 900738 (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation , Including the function of measuring flow rate, humidity, gradient, vibration, odor or infrared)
Including a microphone 9000073, a speaker 900740, an LED lamp 900741, and the like. The camera illustrated in FIG. 121B has a function of shooting a still image. Has a function to shoot movies. It has a function of automatically correcting captured images (still images, moving images). It has a function of storing captured images in a recording medium (externally or built in a digital camera). It has a function of displaying a photographed image on the display unit. Note that the function of the camera illustrated in FIG. 121B is not limited to this, and the camera can have a variety of functions.

FIG. 121C illustrates a computer, which includes a main body 900711, a housing 900752, and a display portion 9.
00753, keyboard 900754, external connection port 900755, pointing device 9000075, input means 900777, sensor (force, displacement, position, speed, acceleration,
Includes the ability to measure angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared 1980), a microphone 9000075, a speaker 900760, an LED lamp 900761, a reader / writer 900762, and the like. A computer illustrated in FIG. 121C has a function of displaying various information (a still image, a moving image, a text image, and the like) on a display portion. It has a function of controlling processing by various software (programs). It has a communication function such as wireless communication or wired communication. It has a function of connecting to various computer networks using a communication function. It has a function of transmitting or receiving various data using a communication function. Note that the function of the computer illustrated in FIG. 121C is not limited to this, and can have various functions.

FIG. 128A illustrates a mobile computer, which includes a main body 901411, a display portion 901412.
, Switch 901413, operation key 901414, infrared port 901415, input means 901416, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness , Including electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared measurement function) 901417, microphone 901418, speaker 901419, LED lamp 901420, and the like. FIG.
A mobile computer illustrated in FIG. 8A has a function of displaying various information (still images, moving images, text images, and the like) on a display portion. The display unit has a touch panel function. The display unit has a function of displaying a calendar, date or time. It has a function of controlling processing by various software (programs). Has a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. Note that the function of the mobile computer illustrated in FIG. 128A is not limited to this, and the mobile computer can have a variety of functions.

FIG. 128B shows a portable image playback device (eg, DVD playback device) provided with a recording medium.
A main body 901431, a housing 901432, a display portion A901433, a display portion B901.
434, recording medium (DVD etc.) reading unit 901435, operation key 901436, speaker unit 901437, input means 901438, sensor 901439 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, Temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared)), a microphone 901440, an LED lamp 901441, and the like. The display portion A 901433 can mainly display image information, and the display portion B 901434 can mainly display character information.

FIG. 128C illustrates a goggle type display, which includes a main body 901451 and a display portion 90145.
2, earphone 901453, support portion 901454, input means 901455, sensor (force,
Displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice,
Including a function of measuring time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared)) 901456, microphone 901457, speaker 901458, and the like. The goggle type display shown in FIG. 128C has a function of displaying an image (a still image, a moving image, a text image, or the like) acquired from the outside on a display portion. In addition,
The function of the goggle type display illustrated in FIG. 128C is not limited to this, and can have various functions.

FIG. 129A shows a portable game machine, which includes a housing 901511, a display portion 901512, a speaker portion 901513, operation keys 901514, a storage medium insertion portion 901515, and input means 90.
1516, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , Including a function of measuring inclination, vibration, odor or infrared) 901517, a microphone 901518, an LED lamp 901519, and the like. A portable game machine shown in FIG. 129A has a function of reading a program or data recorded in a recording medium and displaying the program or data on a display portion. It has a function of sharing information by performing wireless communication with other portable game machines. Note that the portable game machine illustrated in FIG. 129A is not limited to this, and can have a variety of functions.

FIG. 129B illustrates a digital camera with a television receiving function, which includes a main body 901531, a display portion 901532, operation keys 901533, a speaker 901534, and a shutter 901535.
, Image receiving unit 901536, antenna 901537, input means 901538, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current , Including a function of measuring voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared light), 901539, microphone 901540, LED lamp 901541, and the like. A digital camera with a television receiver shown in FIG. 129B has a function of shooting a still image. Has a function to shoot movies. It has a function to automatically correct a photographed image. It has a function of acquiring various information from the antenna. It has a function of storing captured images or information acquired from an antenna. It has a function of displaying a captured image or information acquired from an antenna on a display unit. Note that the function of the digital camera with a television receiver illustrated in FIG. 121H is not limited to this, and can have a variety of functions.

FIG. 130 illustrates a portable game machine, which includes a housing 901611, a first display portion 901612, a second display portion 901613, a speaker portion 901614, operation keys 901615, and a recording medium insertion portion 90.
1616, input means 901617, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power,
(Including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor or infrared)
618, a microphone 901619, an LED lamp 901620, and the like. The portable game machine shown in FIG. 130 has a function of reading a program or data recorded in a recording medium and displaying the program or data on a display portion. It has a function of sharing information by performing wireless communication with other portable game machines. Note that the functions of the portable game machine illustrated in FIG. 130 are not limited thereto, and the portable game machine can have various functions.

121 (A) to (C), FIGS. 128 (A) to (C), FIGS. 129 (A) to (C), and 130, an electronic device displays some information. It has a display part. The electronic device can include a display unit having a wide viewing angle.

Next, application examples of the semiconductor device will be described.

FIG. 122 illustrates an example in which a semiconductor device is provided so as to be integrated with a building. FIG. 122 includes a housing 900810, a display portion 900811, a remote control device 900812 that is an operation portion, a speaker portion 9000081, and the like. The semiconductor device is integrated with the building as a wall-hanging type, and can be installed without requiring a large installation space.

FIG. 123 illustrates another example in which a semiconductor device is provided so as to be integrated with a building.
The display panel 900901 is integrally attached to the unit bath 900902, so that the bather can view the display panel 900901. The display panel 900901 has a function of displaying information when operated by a bather. It has a function that can be used as an advertising or entertainment means.

Note that the semiconductor device is not limited to the side wall of the unit bus 900902 shown in FIG.
It can be installed in various places. For example, a part of the mirror surface or the bathtub itself may be integrated. At this time, the shape of the display panel 900901 may be adapted to the shape of the mirror surface or the bathtub.

FIG. 124 illustrates another example in which the semiconductor device is provided so as to be integrated with a building. The display panel 901002 is attached so as to be curved according to the curved surface of the columnar body 901001.
Here, the columnar body 901001 is described as a utility pole.

A display panel 901002 illustrated in FIG. 124 is provided at a position higher than the human viewpoint.
By installing the display panel 901002 on a building that is repeatedly forested outdoors such as an electric pole, an advertisement can be made to an unspecified number of viewers. Here, the display panel 90100
Since it is easy to display the same image and to switch the image instantaneously by control from the outside, 2 can expect extremely efficient information display and advertisement effect. By providing a self-luminous display element in the display panel 901002, it can be said that the display panel 901002 is useful as a display medium with high visibility even at night. By installing it on the utility pole, it is easy to secure the power supply means of the display panel 901002. In the event of an emergency such as a disaster, it can also be a means of quickly and accurately communicating information to the victims.

Note that as the display panel 901002, for example, a display panel which displays an image by providing a switching element such as an organic transistor on a film-like substrate and driving the display element can be used.

Note that in this embodiment, a wall, a columnar body, and a unit bus are taken as examples of buildings, but this embodiment is not limited to this, and semiconductor devices can be installed in various buildings.

Next, an example in which the semiconductor device is provided integrally with the moving body is described.

FIG. 125 is a diagram illustrating an example in which a semiconductor device is provided integrally with an automobile. The display panel 901102 is attached integrally with the vehicle body 901101 of the automobile, and can display the operation of the vehicle body or information input from inside and outside the vehicle body on demand. Note that a navigation function may be provided.

Note that the semiconductor device can be installed not only in the vehicle body 901101 shown in FIG. 125 but also in various places. For example, it may be integrated with a glass window, a door, a handle, a shift lever, a seat, a room mirror, and the like. At this time, the shape of the display panel 901102 may be adapted to the shape of the object to be installed.

FIG. 126 is a diagram illustrating an example in which a semiconductor device is provided integrally with a train vehicle.

FIG. 126 (a) is a diagram showing an example in which a display panel 901202 is provided on the glass of a door 901201 of a train car. Compared to conventional paper advertisements, there is an advantage that labor costs required for advertisement switching are not incurred. Since the display panel 901202 can instantaneously switch the image displayed on the display unit in response to an external signal, for example, the display panel image is switched every time period when the customer base of the passengers on the train changes. More effective advertising effect can be expected.

FIG. 126 (b) shows a glass window 901203 in addition to the glass of the door 901201 of the train car.
FIG. 5 is a diagram illustrating an example in which a display panel 901202 is provided on a ceiling 901204.
As described above, since the semiconductor device can be easily installed in a place where it has been difficult to install in the past, an effective advertising effect can be obtained. Since the semiconductor device can instantaneously switch the image displayed on the display unit by an external signal, the cost and time at the time of advertisement switching can be reduced, and more flexible advertisement operation and information transmission can be achieved. It becomes possible.

Note that the semiconductor device can be installed not only in the door 901201, the glass window 901203, and the ceiling 901204 shown in FIG. For example, it may be integrated with a strap, a seat, a rail, a floor or the like. At this time, the shape of the display panel 901202 may be matched with the shape of the display panel.

FIG. 127 is a diagram illustrating an example in which a semiconductor device is provided integrally with a passenger airplane.

FIG. 127 (a) shows a display panel 90130 on a ceiling 901301 above the seat of a passenger airplane.
It is the figure shown about the shape at the time of use when 2 was provided. The display panel 901302 is
A ceiling 901301 and a hinge part 901303 are attached integrally, and the passenger can view the display panel 901302 by the expansion and contraction of the hinge part 901303. A display panel 901302 has a function of displaying information when operated by a passenger. It has a function that can be used as an advertising or entertainment means. As shown in FIG. 127 (b), by folding the hinge part and storing it in the ceiling 901301, safety during takeoff and landing can be considered. In addition,
By turning on the display element of the display panel in an emergency, it can be used as an information transmission means and a guide light.

Note that the semiconductor device can be installed not only in the ceiling 901301 illustrated in FIG. 127 but also in various places. For example, it may be integrated with a seat seat, a seat table, an armrest, a window and the like. A large display panel that can be viewed simultaneously by a large number of people may be installed on the wall of the aircraft. At this time, the shape of the display panel 901302 may be adapted to the shape of the object to be installed.

In the present embodiment, the moving body is exemplified as a train car body, an automobile body, and an airplane body, but is not limited to this. A motorcycle, an automobile (including an automobile, a bus, etc.),
It can be installed on various things such as trains (including monorails, railways, etc.) and ships. Since the semiconductor device can instantly switch the display of the display panel in the moving body by an external signal, installing the semiconductor device in the moving body targets a large number of unspecified customers. It can be used for applications such as advertisement display boards and information display boards in the event of a disaster.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of the case,
An example in the case of detailed description, an example in the case of application, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

100 pixels
101 switch
102 switch
103 Liquid crystal element
103 potential V
104 Liquid crystal element
105 Liquid crystal element
106 Capacitor element
107 capacitive element
108 Wiring
109 Wiring
110 Wiring
111 Common electrode
150 pixels
151 switch
152 switch
153 Liquid crystal element
154 Liquid crystal element
155 Liquid crystal element
156 capacitive element
157 capacitive element
158 Wiring
159 Wiring
160 Wiring
161 capacitive element
200 pixels
201 switch
202 switch
203 switch
203 transistor
204 Liquid crystal element
205 Liquid crystal element
206 Liquid crystal element
207 Capacitance element
208 capacitive element
209 Wiring
210 Wiring
211 Wiring
253 transistor
260 Wiring
261 Wiring
262 Wiring
301 switch
302 switch
303 transistor
309 Wiring
310 Wiring
313 Wiring
353 transistor
356 Liquid crystal element
359 capacitive element
364 Wiring
400 pixels
401 switch
402 switch
403 Liquid crystal element
404 Liquid crystal element
405 Liquid crystal element
406 Capacitor element
407 capacitive element
408 capacitive element
409 capacitive element
410 Wiring
411 wiring
412 Wiring
413 Wiring
414 Wiring
415 Wiring
416 Common electrode
417 capacitive element
450 pixels
451 switch
452 switch
453 Liquid crystal element
454 liquid crystal element
455 Liquid crystal element
456 capacitive element
457 capacitive element
458 wiring
459 wiring
460 wiring
461 Common electrode
463 capacitance line
465 capacitance line
500 pixels
501 switch
502 switch
503 Liquid crystal element
504 Liquid crystal element
505 Liquid crystal element
506 Liquid crystal element
507 capacitive element
508 capacitive element
509 capacitive element
510 Wiring
511 wiring
512 wiring
550 pixels
551 switch
552 switch
553 switch
554 Liquid crystal element
555 Liquid crystal element
556 Liquid crystal element
557 Liquid crystal element
558 capacitive element
559 capacitive element
560 wiring
561 Wiring
562 Wiring
563 Wiring
565 capacitive element
566 capacitive element
572 capacitive element
584 Capacitance element
600 pixels
601 switch
602 switch
603 Liquid crystal element
604 liquid crystal element
605 Liquid crystal element
606 Voltage divider
607 Voltage divider
608 Wiring
609 Wiring
610 Wiring
650 pixels
651 switch
652 switch
653 Liquid crystal element
654 Liquid crystal element
655 liquid crystal element
656 Voltage divider
657 Voltage divider
658 switch
659 switch
660 wiring
661 wiring
662 Wiring
700 pixels
701 switch
702 switch
703 Liquid crystal element
704 Liquid crystal element
705 Liquid crystal element
706 transistor
707 transistor
708 Wiring
709 Wiring
710 Wiring
750 pixels
751 switch
752 switch
753 Liquid crystal element
754 Liquid crystal element
755 Liquid crystal element
756 transistor
757 transistor
758 wiring
759 wiring
760 Wiring
761 Wiring
762 Capacitor element
763 capacitive element
764 capacitive element
800 pixels
801 switch
802 switch
803 transistor
803 Liquid crystal element
804 transistor
804 liquid crystal element
805 Liquid crystal element
806 Liquid crystal element
807 Liquid crystal element
808 wiring
809 wiring
810 Wiring
811 Wiring
850 pixels
851 switch
852 switch
853 Liquid crystal element
854 Liquid crystal element
855 Liquid crystal element
856 transistors
857 transistor
858 wiring
859 Wiring
860 wiring
861 Capacitor element
900 pixels
901 switch
902 switch
903 Liquid crystal element
904 Liquid crystal element
905 Liquid crystal element
906 Liquid crystal element
907 transistor
908 transistor
909 transistor
910 Wiring
911 wiring
912 Wiring
101N switch
101P switch
102N switch
102P switch
105a Liquid crystal element
105b Liquid crystal element
151N switch
152N switch
1911 Signal line drive circuit
1912 Scanning line driving circuit
1913 Pixel part
1914 pixels
201N switch
202N switch
211A wiring
251N switch
252N switch
301N switch
302N switch
401N switch
402N switch
451N switch
452N switch
501N switch
502N switch
551N switch
552N switch
601N switch
602N switch
651N switch
652N switch
701N switch
702N switch
751N switch
752N switch
801N switch
802N switch
851N switch
852N switch
901N switch
902N switch
107320 FPC
107321 IC chip
170100 substrate
170101 Pixel portion
170102 pixels
170103 Scan line side input terminal
170104 Signal line side input terminal
170105 scan line driving circuit
170106 Signal line driver circuit
170200 FPC
170201 IC chip
170300 substrate
170301 Pixel section
170303 Signal line driver circuit
170310 substrate
170320 FPC
170321 Sealing material
170401 IC chip
170302a Scan line drive circuit
170302b Scan line driving circuit
170501a IC chip
170501b IC chip
180100 display device
180101 pixel portion
180102 pixels
180103 Signal line driver circuit
180104 Scan line drive circuit
180701 images
180702 images
180703 images
180704 images
180705 images
180711 images
180712 images
180713 images
180714 images
180715 images
180716 images
180717 images
180721 images
180722 images
180723 images
180724 images
180725 images
180801 images
180802 images
180803 images
180804 area
180805 area
180806 area
180811 images
180812 images
180813 images
180814 area
180815 region
180816 area
180821 images
180822 images
180823 images
180824 area
180825 region
180826 area
180831 images
180832 images
180833 images
180834 area
180835 region
180836 area
180841 area
180842 points
180901 images
180902 images
180903 images
180904 area
180905 area
180906 area
180907 range
180908 range
180909 vector
180910 Displacement vector
180911 images
180912 images
180913 images
180914 images
180915 region
180916 area
180917 region
180918 region
180919 range
180920 range
180921 motion vector
180922 Displacement vector
180923 displacement vector
181000 External image signal
181001 Horizontal sync signal
181002 Vertical synchronization signal
181003 Image signal
181004 Source start pulse
181005 Source clock
181006 Gate start pulse
181007 Gate clock
181008 Frequency control signal
181011 Control circuit
181012 Source driver
181013 Gate driver
181014 Display area
181015 Image processing circuit
181016 Timing generation circuit
181020 detection circuit
181021 first memory
181022 Second memory
181023 Third memory
181023 Image signal
181024 brightness control circuit
181025 High-speed processing circuit
181026 memory
20101 Backlight unit
2010102 Diffuser
20103 Light guide plate
20104 reflector
2010 105 Lamp reflector
20106 light source
LCD panel
20201 Backlight unit
20202 Lamp reflector
20203 Cold cathode tube
20211 Backlight unit
20212 Lamp reflector
20213 Light Emitting Diode (LED)
20213W light emitting diode
20221 backlight unit
20222 Lamp reflector
20223 Light Emitting Diode (LED)
20224 Light Emitting Diode (LED)
20225 Light emitting diode (LED)
20231 backlight unit
20232 lamp reflector
20233 Light emitting diode (LED)
20234 Light Emitting Diode (LED)
20235 Light Emitting Diode (LED)
20300 Polarizing film
20301 Protective film
20302 Substrate film
20303 PVA polarizing film
20304 Substrate film
20305 Adhesive layer
20306 Release film
20401 Video signal
20402 control circuit
20403 Signal line driving circuit
20404 Scan line driving circuit
20405 pixel part
20406 Illumination means
20407 power supply
20408 Drive circuit section
20410 scan line
20412 signal line
20431 Shift register
20432 latch
20433 latch
20434 level shifter
20435 buffers
20441 shift register
20442 Level shifter
20443 buffers
20500 Backlight unit
20501 Diffuser
20502 Shading plate
20503 Lamp reflector
20504 light source
20505 LCD panel
20510 Backlight unit
20511 Diffuser
20512 Shading plate
20513 Lamp reflector
20514 light source
20515 LCD panel
20514a Light source (R)
20514b Light source (G)
20514c Light source (B)
40100 pixels
40101 transistors
40102 Liquid crystal element
40103 capacitive element
40104 Wiring
40105 Wiring
40106 wiring
40107 Counter electrode
40110 pixels
40111 transistors
40112 Liquid crystal element
40113 capacitive element
40114 wiring
40115 wiring
40116 wiring
40200 pixels
40200 pixels
40201 transistor
40202 Liquid crystal element
40203 capacitive element
40204 wiring
40205 Wiring
40206 Wiring
40207 Counter electrode
40210 pixels
40211 transistor
40212 Liquid crystal element
40213 Capacitor element
40214 Wiring
40215 Wiring
40216 Wiring
40217 Counter electrode
40300 subpixels
40301 transistors
40302 Liquid crystal element
40303 capacitive element
40304 Wiring
40305 Wiring
40306 Wiring
40307 Counter electrode
40310 subpixels
40311 transistor
Liquid crystal element
40313 Capacitance element
40315 Wiring
40316 Wiring
40317 Counter electrode
40320 pixels
50100 Liquid crystal layer
50101 substrate
50102 substrate
50103 Polarizing plate
50104 Polarizing plate
50105 electrode
50106 electrodes
50200 Liquid crystal layer
50201 substrate
50202 substrate
50203 Polarizing plate
50204 Polarizing plate
50205 electrode
50206 electrodes
50210 Liquid crystal layer
50211 substrate
50212 substrate
50213 Polarizing plate
50214 Polarizing plate
50215 electrode
50216 electrodes
50300 Liquid crystal layer
50301 substrate
50302 substrate
50303 Polarizing plate
50304 Polarizing plate
50305 electrode
50306 electrode
50310 Liquid crystal layer
50311 substrate
50312 substrate
50313 Polarizing plate
50314 Polarizing plate
50315 electrode
50316 electrode
50400 Liquid crystal layer
50401 substrate
50402 substrate
50403 Polarizing plate
50404 Polarizing plate
50405 electrode
50406 electrodes
50410 Liquid crystal layer
50411 substrate
50412 substrate
50413 Polarizing plate
50414 Polarizing plate
50415 electrode
50416 electrode
50417 Insulating film
50501 pixel electrode
50503 Projection
50601 pixel electrode
50602 pixel electrode
50611 pixel electrode
50612 Pixel electrode
50631 Pixel electrode
50632 Pixel electrode
50641 Pixel electrode
50642 Pixel electrode
50701 Pixel electrode
50702 Pixel electrode
50711 Pixel electrode
50712 Pixel electrode
50731 Pixel electrode
50732 Pixel electrode
50741 Pixel electrode
50742 pixel electrode
502117 Projection
502118 Protrusion
10101 Substrate
10102 Insulating film
10103 conductive layer
10104 Insulating film
10105 Semiconductor layer
10106 Semiconductor layer
10107 Conductive layer
10108 Insulating film
10109 Conductive layer
10110 Alignment film
10112 Alignment film
10113 conductive layer
10114 light shielding film
10115 Color filter
10116 substrate
10117 Spacer
10118 Liquid crystal molecules
10201 substrate
10202 Insulating film
10203 conductive layer
10204 Insulating film
10205 Semiconductor layer
10206 Semiconductor layer
10207 Conductive layer
10208 Insulating film
10209 Conductive layer
10210 Alignment film
10212 Alignment film
10213 conductive layer
10214 light shielding film
10215 color filter
10216 substrate
10217 Spacer
10218 Liquid crystal molecules
10219 Orientation control protrusion
10231 substrates
10232 Insulating film
10233 conductive layer
10234 Insulating film
10235 semiconductor layer
10236 semiconductor layers
10237 conductive layer
10238 Insulating film
10239 conductive layer
10240 Alignment film
10242 Alignment film
10243 conductive layer
10244 light shielding film
10245 color filter
10246 substrate
10247 Spacer
10248 Liquid crystal molecules
10249 copies
10301 substrate
10302 Insulating film
10303 Conductive layer
10304 Insulating film
10305 Semiconductor layer
10306 Semiconductor layer
10307 conductive layer
10308 Insulating film
10309 Conductive layer
10310 Alignment film
10312 Alignment film
10314 light shielding film
10315 color filter
10316 substrate
10317 Spacer
10318 Liquid crystal molecules
10331 substrate
10332 Insulating film
10333 conductive layer
10334 Insulating film
10335 Semiconductor layer
10336 semiconductor layer
10337 conductive layer
10338 Insulating film
10339 conductive layer
10340 Alignment film
10342 Alignment film
10343 conductive layer
10344 light shielding film
10345 color filters
10346 substrate
10347 spacer
10348 Liquid crystal molecules
10349 Insulating film
10401 scan lines
10402 Video signal line
10403 capacitance line
10404 transistor
10405 pixel electrode
10406 pixel capacity
10501 scan line
10502 Video signal line
10503 capacitance line
10504 transistor
10505 pixel electrode
10506 pixel capacity
10507 Orientation control protrusion
10511 scan line
10512 Video signal line
10513 capacitance line
10514 transistor
10515 pixel electrode
10516 pixel capacity
10517 copies
10601 scan lines
10602 Video signal line
10603 common electrode
10604 transistor
10605 pixel electrode
10611 scan line
10612 Video signal line
10613 common electrode
10614 transistor
10615 pixel electrode
106013 Common electrode
70101 substrate
70102 alignment film
70103 Laura
70104 Roller for rubbing
70105 sealing material
70106 spacer
70107 substrate
70108 Alignment film
70109 liquid crystal
70110 resin
70113 Liquid crystal injection port
70301 substrate
70302 Alignment film
70303 Laura
70304 Roller for rubbing
70305 sealing material
70306 spacer
70307 substrate
70308 Alignment film
70309 liquid crystal
80300 pixels
80301 Switching transistors
80302 Driving transistor
80303 capacitive element
80304 Light emitting device
80305 signal line
80306 scan line
80307 power line
80308 Common electrode
80309 Rectifier
80400 pixels
80401 Switching transistor
80402 Driving transistor
80403 capacitive element
80404 Light emitting device
80405 signal line
80406 scan lines
80407 power line
80408 common electrode
80409 Rectifier
80410 scan line
80500 pixels
80501 Switching transistor
80502 Driving transistor
80503 capacitive element
80504 light emitting device
80505 signal line
80506 scan line
80507 power line
80508 common electrode
80509 erasing transistor
80510 scan line
80600 Driving transistor
80601 switch
80602 switch
80603 switch
80604 capacitive element
80605 capacitive element
80611 signal line
80612 power line
80613 scan lines
80614 scanning lines
80620 light emitting device
80621 common electrode
80700 Driving transistor
80701 switch
80702 switch
80703 switch
80704 capacitive element
80711 signal line
80712 power line
80713 scan lines
80714 scanning lines
80730 light emitting device
80731 common electrode
80734 scanning lines
70101 substrate
70102 alignment film
70103 Laura
70104 Roller for rubbing
70105 sealing material
70106 spacer
70107 substrate
70108 Alignment film
70109 liquid crystal
70110 resin
70113 Liquid crystal injection port
70301 substrate
70302 Alignment film
70303 Laura
70304 Roller for rubbing
70305 sealing material
70306 spacer
70307 substrate
70308 Alignment film
70309 liquid crystal
80300 pixels
80301 Switching transistor
80302 Driving transistor
80303 capacitive element
80304 Light emitting device
80305 signal line
80306 scan line
80307 power line
80308 Common electrode
80309 Rectifier
80400 pixels
80401 Switching transistor
80402 Driving transistor
80403 capacitive element
80404 Light emitting device
80405 signal line
80406 scan lines
80407 power line
80408 common electrode
80409 Rectifier
80410 scan line
80500 pixels
80501 Switching transistor
80502 Driving transistor
80503 capacitive element
80504 light emitting device
80505 signal line
80506 scan line
80507 power line
80508 common electrode
80509 erasing transistor
80510 scan line
80600 Driving transistor
80601 switch
80602 switch
80603 switch
80604 capacitive element
80605 capacitive element
80611 signal line
80612 power line
80613 scan lines
80614 scanning lines
80620 light emitting device
80621 common electrode
80700 Driving transistor
80701 switch
80702 switch
80703 switch
80704 capacitive element
80711 signal line
80712 power line
80713 scan lines
80714 scanning lines
80730 light emitting device
80731 common electrode
80734 scanning lines
60105 transistors
60106 wiring
60107 Wiring
60108 transistors
60111 wiring
60112 Counter electrode
60113 capacitor
60115 pixel electrode
60116 Bulkhead
60117 Organic conductor film
60118 Organic thin film
60119 substrate
60200 substrate
60201 wiring
60202 wiring
60203 wiring
60204 Wiring
60205 transistors
60206 transistors
60207 transistors
60208 pixel electrode
6021 Bulkhead
60212 Organic conductor film
60213 Organic thin film
60214 Counter electrode
60300 substrate
60301 wiring
60302 wiring
60303 wiring
60304 Wiring
60305 transistor
60306 transistor
60307 transistors
60308 transistors
60309 pixel electrode
60311 Wiring
60312 Wiring
60321 bulkhead
60322 Organic conductor film
60323 Organic thin film
60324 Counter electrode
190101 anode
190102 cathode
190103 Hole transport region
190104 Electron transport region
190105 Mixed area
190106 area
190107 area
190108 area
190109 area
190260 Transfer room
190261 Transfer chamber
190262 Road room
190263 unloading room
190264 Intermediate processing chamber
190265 Sealing chamber
190266 Conveying means
190267 Conveying means
190268 Heat treatment chamber
190269 Deposition processing chamber
190270 Deposition processing chamber
190271 Deposition chamber
190272 Plasma processing chamber
190273 Deposition processing chamber
190274 Deposition processing chamber
190276 Deposition processing chamber
190380 Evaporation source holder
190381 Evaporation source
190382 Distance sensor
190383 Articulated arm
190384 Material supply pipe
190386 Substrate stage
190387 Substrate chuck
190388 Mask chuck
190389 substrate
190390 Shadow Mask
190391 Top plate
190392 Bottom plate
190277a Gate valve
190381a Evaporation source
190381b Evaporation source
190381c Evaporation source
190385a Material source
190385b Material source
190385c Material source
120100 electrode layer
120102 electroluminescent layer
120103 electrode layer
120104 Insulating film
120105 Insulating film
120106 Insulating film
120200 electrode layer
120201 Luminescent material
120202 electroluminescent layer
120203 electrode layer
120204 Insulating film
120205 Insulating film
120206 Insulating film
130100 Rear projection display device
130101 screen panel
130102 speaker
130104 Operation switches
130110 housing
130111 Projector unit
130112 mirror
130200 Front projection display device
Projection optical system
130301 light source unit
130302 Light source lamp
130303 Light source optical system
130304 modulation unit
130305 Dichroic mirror
130306 Total reflection mirror
130308 display panel
130309 prism
Projection optical system
130400 modulation unit
130401 Dichroic mirror
130402 Dichroic mirror
130403 Total reflection mirror
Polarized beam splitter
130405 polarization beam splitter
130406 polarization beam splitter
130407 Reflective display panel
13041 Projection optical system
130501 Dichroic mirror
130502 Dichroic mirror
Dichroic mirror for red light
130504 phase difference plate
130505 Color filter plate
130506 micro lens array
130507 display panel
130508 display panel
130509 display panel
130511 Projection optical system
900101 Display panel
900102 Pixel portion
900103 Scan line driving circuit
900104 Signal line driving circuit
900111 Circuit board
900112 Control circuit
900113 signal division circuit
900114 Connection wiring
900201 tuner
900202 Video signal amplifier circuit
900203 Video signal processing circuit
900205 Audio signal amplifier circuit
900206 Audio signal processing circuit
900207 Speaker
900208 Control circuit
900209 Input section
900212 Control circuit
900213 Signal division circuit
900301 housing
900302 Display screen
900303 Speaker
900304 Operation switch
900305 input means
900306 sensor
930307 Microphone
900310 charger
900312 housing
900313 Display section
900316 Operation key
900317 Speaker part
900318 input means
900319)
900320 Macrophone
900401 Display panel
900402 Printed wiring board
900403 Pixel part
900404 Scan line driver circuit
940405 Scanning line driving circuit
900406 signal line driver circuit
940407 controller
9000040 Central processing unit (CPU)
940409 memory
900410 power circuit
900411 Audio processing circuit
900412 Transmission / reception circuit
900413 Flexible Wiring Board (FPC)
900414 Interface (I / F) part
900415 Antenna port
900416 VRAM
900417 DRAM
900418 flash memory
900419 Interface (I / F) part
900420 Control signal generation circuit
900421 Decoder
900421 Decoder
900422 Register
900423 arithmetic circuit
900424 RAM
900425 Input means
9000042 Microphone
9000042 Speaker
900428 Antenna
900501 display panel
900513 FPC
900530 housing
900531 Printed circuit board
900532 Speaker
900533 Microphone
900534 transceiver circuit
90055 signal processing circuit
90056 input means
900537 battery
9000509 housing
900541 sensor
900600 mobile phone
900601 body (A)
900602 body (B)
900603 housing
9000060 Operation switches
90065 Microphone
90066 Speaker
900706 circuit board
9000060 display panel (A)
900609 Display panel (B)
900610 hinge
900611 sensor
90062 Input means
900711 housing
900712 Support stand
900713 Display section
900714 Input means
900715)
900617 microphone
9000071 Speaker
9000071 operation keys
900719 LED lamp
900731 body
900732 Display section
900733 Image receiver
900734 Operation keys
900735 External connection port
900736 Shutter
9000073 Input means
900738 sensor
900739 Microphone
900740 Speaker
900074 LED lamp
90071 body
90072 housing
90073 display unit
900744 keyboard
90075 External connection port
90076 pointing device
900777 Input means
90078)
9000075 Microphone
900760 Speaker
90071 LED lamp
9000076 Reader / Writer
900810 housing
90081 display unit
90082 Remote control device
900081 Speaker unit
90091 display panel
90902 unit bus
901001 Columnar body
901002 Display panel
901101 body
901102 Display panel
901201 Door
901202 Display panel
901203 Glass window
901204 Ceiling
901301 Ceiling
901302 Display panel
901303 Hinge part
901411 body
901414 Display unit
901413 switch
901414 Operation keys
901415 infrared port
901416 input means
901417)
901418 Microphone
901419 Speaker
901420 LED lamp
901431 body
901432 housing
901433 Display unit A
901434 Display unit B
901435 parts
901436 Operation keys
901437 Speaker unit
901438 input means
901439)
901440 microphone
901441 LED lamp
901451 body
901452 display unit
901453 Earphone
901454 support part
901455 input means
901456)
901457 Microphone
901458 Speaker
901511 housing
901512 Display unit
901513 Speaker unit
901514 Operation keys
901515 Storage medium insertion part
901516 Input means
901517)
901518 Microphone
901519 LED lamp
901531 body
901532 Display unit
901533 Operation keys
901534 Speaker
901535 Shutter
901536 Image receiver
901537 Antenna
901538 input means
901539 sensor
901540 Microphone
901541 LED lamp
901611 housing
901612 Display unit
901613 Display unit
901614 Speaker unit
901615 Operation keys
901616 Recording medium insertion part
901617 Input means
901618)
901619 Microphone
901620 LED lamp

Claims (3)

Have pixels,
The pixel includes a first transistor, a second transistor, a first capacitor, a second capacitor, a first liquid crystal element, a second liquid crystal element, and a third liquid crystal element. , Having a first wiring, a second wiring, a third wiring, and a fourth wiring,
A first terminal of the first transistor is electrically connected to the first wiring;
A second terminal of the first transistor is electrically connected to a first electrode of the first liquid crystal element;
A gate of the first transistor is electrically connected to the second wiring;
A first electrode of the first liquid crystal element is electrically connected to a first electrode of the first capacitor;
A second electrode of the first liquid crystal element is electrically connected to the third wiring;
A first terminal of the second transistor is electrically connected to the fourth wiring;
A second terminal of the second transistor is electrically connected to a first electrode of the second liquid crystal element;
A gate of the second transistor is electrically connected to the second wiring;
A first electrode of the second liquid crystal element is electrically connected to a first electrode of the second capacitor;
A second electrode of the second liquid crystal element is electrically connected to the third wiring;
A second electrode of the first capacitor element is electrically connected to a second electrode of the second capacitor element;
A second electrode of the second capacitor element is electrically connected to a first electrode of the third liquid crystal element;
The display device, wherein the second electrode of the third liquid crystal element is electrically connected to the third wiring. Have pixels,
The pixel includes a first transistor, a second transistor, a first capacitor, a second capacitor, a third capacitor, a first liquid crystal element, and a second liquid crystal element. A third liquid crystal element, a first wiring, a second wiring, a third wiring, and a fourth wiring;
A first terminal of the first transistor is electrically connected to the first wiring;
A second terminal of the first transistor is electrically connected to a first electrode of the first liquid crystal element;
A gate of the first transistor is electrically connected to the second wiring;
A first electrode of the first liquid crystal element is electrically connected to a first electrode of the first capacitor;
A second electrode of the first liquid crystal element is electrically connected to the third wiring;
A first terminal of the second transistor is electrically connected to the fourth wiring;
A second terminal of the second transistor is electrically connected to a first electrode of the second liquid crystal element;
A gate of the second transistor is electrically connected to the second wiring;
A first electrode of the second liquid crystal element is electrically connected to a first electrode of the second capacitor;
A second electrode of the second liquid crystal element is electrically connected to the third wiring;
A second electrode of the first capacitor element is electrically connected to a second electrode of the second capacitor element;
A second electrode of the second capacitor element is electrically connected to a first electrode of the third capacitor element;
A second electrode of the third capacitor element is electrically connected to a first electrode of the third liquid crystal element;
The display device, wherein the second electrode of the third liquid crystal element is electrically connected to the third wiring. In claim 1 or 2,
At least one of the first transistor and the second transistor includes an oxide semiconductor.

Images