JP6895574B2 - Transmissive liquid crystal display device - Google Patents

Description

The present invention relates to a product, a method, or a method of producing a product. In particular, it relates to a display device or a semiconductor device. In particular, it relates to a display device. In particular, the present invention relates to an active matrix type liquid crystal display device.

In recent years, as display devices, the development of liquid crystal display devices and EL display devices has been rapidly progressing. In particular, the spread of liquid crystal display devices is remarkable. The liquid crystal display device is required to have high brightness, high contrast, high-speed responsiveness, a wide viewing angle, and the like. In addition, reduction of power consumption, weight reduction, and miniaturization of liquid crystal display devices mounted on portable electronic devices are also important issues.

Various technologies have been developed to widen the viewing angle of liquid crystal display devices. As a technique for expanding the viewing angle, for example, MVA (Multi Vertical Domain; hereinafter, M)
It is called VA. ) Method PVA (Patterned Vertical Alignmen)
t. Hereinafter, it is referred to as PVA. ) Method and CPA (Continuous Pinwheel)
There is an Alignment) method. Although the viewing angle was widened by such a technique as compared with the conventional technique, it was insufficient. Therefore, by dividing one pixel into two sub-pixels, the orientation state of the liquid crystal is changed, and the inclination angle of the liquid crystal molecules is apparently averaged so that the display is uniform from any direction. (For example, Patent Document 1) has been developed to improve the viewing angle characteristics.

Japanese Unexamined Patent Publication No. 2006-276582

In the liquid crystal display device, the viewing angle characteristic can be improved by providing sub-pixels in the pixels to give the pixels a plurality of orientation states. However, the viewing angle characteristics are not yet sufficient, and there is a possibility that the viewing angle characteristics can be improved by adding more sub-pixels.

However, if the number of sub-pixels is simply increased, there are inconveniences such as a decrease in aperture ratio and an increase in drive circuits, which not only increases the manufacturing cost but also causes an adverse effect that the performance itself as a display device is deteriorated. .. Specifically, when the aperture ratio decreases, the brightness and contrast decrease, and the power consumption increases. Alternatively, the pixel layout density is increased, the manufacturing yield is reduced, and the cost is increased. Alternatively, as the number of sub-pixels increases, so does the number of image signals to be input. Therefore, the number of connection points between the glass substrate and the external drive circuit increases. As a result, reliability is lowered due to poor contact or the like.

An object of the present invention is to provide a display device having excellent viewing angle characteristics while maintaining the performance as a display device. Another object of the present invention is to provide a highly reliable display device. Alternatively, it is an object of the present invention to provide a display device having high contrast. Alternatively, it is an object of the present invention to provide a lightweight display device. Alternatively, it is an object of the present invention to provide a display device having a small size. Another object of the present invention is to provide a display device having high brightness. Another object of the present invention is to provide a display device having low power consumption. Another object of the present invention is to provide a display device having a high aperture ratio. Another object of the present invention is to provide a display device having a low manufacturing cost.

One of the present invention is a liquid crystal display device having three or more liquid crystal elements in one pixel and having different voltage values applied to each of the liquid crystal elements. In order to make the voltage applied to each liquid crystal element different, it is performed by arranging an element that divides the applied voltage. Alternatively, it is performed by arranging an element that converts a current into a voltage or an element that converts a voltage into a current. As an example, a capacitive element, a resistance element, a non-linear element, a switch, a transistor, a diode-connected transistor, a diode (PIN type, PN type, shotkey type, MIM type, MIS type, etc.), an inductor element, etc. are arranged. It is done by.

As the switch, various forms can be used. Examples include electrical switches and mechanical switches. In other words, it suffices if the current flow can be controlled.
Not limited to specific ones. For example, as a switch, a transistor (for example, a bipolar transistor, a MOS transistor, etc.), a diode (for example, a PN diode, PI)
N diode, Schottky diode, MIM (Metal Insulator M)
etal) Diode, MIS (Metal Insulator Semicondu)
constructor) diode, diode-connected transistor, etc.), thyristor, etc. can be used. Alternatively, a logic circuit combining these can be used as a switch.

Examples of mechanical switches include switches using MEMS (Micro Electro Mechanical Systems) technology, such as the Digital Micromirror Device (DMD). The switch has electrodes that can be moved mechanically, and the movement of the electrodes controls connection and disconnection.

When a transistor is used as a switch, the polarity (conductive type) of the transistor is not particularly limited because the transistor operates as a mere switch. However, when it is desired to suppress the off-current, it is desirable to use a transistor having the polarity with the smaller off-current. Examples of the transistor having a small off-current include a transistor having an LDD region and a transistor having a multi-gate structure. Alternatively, when the potential of the source terminal of the transistor operated as a switch operates in a state close to the potential of the low potential side power supply (Vss, GND, 0V, etc.), it is desirable to use an N-channel transistor. On the contrary, when the potential of the source terminal operates in a state close to the potential of the high potential side power supply (Vdd or the like), it is desirable to use a P-channel transistor. This is because, in the N-channel transistor, when the source terminal operates near the potential of the low-potential side power supply, and in the P-channel transistor, when the source terminal operates near the potential of the high-potential side power supply, the gate and the source This is because it is easy to operate as a switch because the absolute value of the voltage between them can be increased. This is because the source follower operation is rarely performed, so that the magnitude of the output voltage is unlikely to be small.

CMO using both N-channel transistor and P-channel transistor
An S-type switch may be used as a switch. In a CMOS type switch, if either a P-channel transistor or an N-channel transistor conducts, a current flows, so that the switch can easily function as a switch. For example, the voltage can be appropriately output regardless of whether the voltage of the input signal to the switch is high or low. Further, since the voltage amplitude value of the signal for turning the switch on or off can be reduced, the power consumption can also be reduced.

When a transistor is used as the switch, the switch has an input terminal (one of the source terminal and the drain terminal), an output terminal (the other of the source terminal and the drain terminal), and the switch.
It has a terminal (gate terminal) that controls continuity. On the other hand, when a diode is used as the switch, the switch may not have a terminal for controlling conduction. Therefore, using a diode as a switch rather than a transistor can reduce the wiring for controlling the terminals.

When it is explicitly stated that A and B are connected, there are cases where A and B are electrically connected and cases where A and B are functionally connected. , A and B are directly connected to each other. Here, it is assumed that A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, it is not limited to the predetermined connection relationship, for example, the connection relationship shown in the figure or text, but also includes the connection relationship other than the connection relationship shown in the figure or text.

For example, when A and B are electrically connected, an element (for example, a switch, a transistor, a capacitive element, an inductor, a resistance element, a diode, etc.) that enables an electrical connection between A and B is , One or more may be arranged between A and B. Alternatively, assuming that A and B are functionally connected, a circuit (for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.)) or a signal conversion circuit that enables functional connection between A and B. (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes the signal potential level, etc.), voltage source, current source, switching circuit , Amplification circuit (circuit that can increase signal amplitude or current amount, operational amplifier, differential amplification circuit, source follower circuit, buffer circuit, etc.), signal generation circuit, storage circuit, control circuit, etc.) is between A and B. One or more may be arranged in. Alternatively, when A and B are directly connected, A and B may be directly connected without sandwiching another element or another circuit between A and B.

When it is explicitly stated that A and B are directly connected, it means that A and B are directly connected (that is, another element or another circuit between A and B). When A and B are electrically connected (that is, when they are connected without intervening) and when A and B are connected by sandwiching another element or another circuit between A and B. If there is) and.

When it is explicitly stated that A and B are electrically connected, it means that A and B are electrically connected (that is, another element between A and B). When A and B are functionally connected (that is, when they are connected by sandwiching another circuit) and when A and B are functionally connected (that is, when they are functionally connected by sandwiching another circuit between A and B). When A and B are directly connected (when) and when A and B are directly connected (when
That is, it is assumed that A and B are connected without sandwiching another element or another circuit). In other words, the case of explicitly stating that it is electrically connected is the same as the case of explicitly stating that it is simply connected.

Display device A display device, a display device having a display element, a light emitting element, and a light emitting device having a light emitting element can use various forms and can have various elements. For example, as a display element, a display device, a light emitting element or a light emitting device, an EL element (EL element containing organic and inorganic substances, an organic EL element, an inorganic EL element), an electron emitting element, a liquid crystal element, and the like.
Electronic ink, electrophoresis element, grating light valve (GLV), plasma display (PDP), digital micromirror device (DMD), piezoelectric ceramic display, carbon nanotube, etc. A display medium having a variable transmittance or the like can be used. The display device using the EL element is an EL display, and the display device using an electron emitting element is a field emission display (FED) or an SED flat display (SED: Surface).
-Condition Electron-emitter Display) and other display devices that use liquid crystal elements include liquid crystal displays (transmissive liquid crystal display, semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection liquid crystal display), and electronic ink. Electronic paper is an example of a display device using a liquid crystal display or an electrophoretic element.

The EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. The EL layer uses light emission (fluorescence) from singlet excitons.
Includes those that utilize light emission (phosphorescence) from triplet excitons, those that utilize light emission (fluorescence) from singlet excitors, and those that utilize light emission (phosphorescence) from triplet excitators. Things, things formed by organic substances, things formed by inorganic substances, things including those formed by organic substances and those formed by inorganic substances, high molecular weight materials, low molecular weight materials, high molecular weight materials and low Those containing molecular materials and the like can be used. However, it is not limited to this, and E
Various L elements can be used.

The electron emitting element is an element that concentrates a high electric field on a sharp cathode to extract electrons.
For example, as an electron emitting element, spinto type, carbon nanotube (CNT) type, metal-
MIS (Metal-Insulator-Metal) type in which insulator-metal is laminated, MIS (Metal-Insulator-Semico) in which metal-insulator-semiconductor is laminated
MOSFET) type, MOS type, silicon type, thin film diode type, diamond type, surface conductive emitter SCD type, ode type, diamond type, surface conductive emitter SCD type, metal-
Thin film types such as insulator-semiconductor-metal type, HEED type, EL type, porous silicon type, surface conduction (SED) type and the like can be used. However, the present invention is not limited to this, and various electron emitting elements can be used.

The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of the liquid crystal, and is composed of a pair of electrodes and a liquid crystal. The optical modulation action of the liquid crystal is
It is controlled by the electric field applied to the liquid crystal (including the horizontal electric field, the vertical electric field, or the diagonal electric field). The liquid crystal elements include nematic liquid crystal, cholesteric liquid crystal, smectic liquid crystal, discotic liquid crystal, thermotropic liquid crystal, liotropic liquid crystal, liotropic liquid crystal, low molecular weight liquid crystal, polymer liquid crystal, strong dielectric liquid crystal, anti-strong dielectric liquid crystal, and main chain. Type liquid crystal, side chain type polymer liquid crystal, plasma address liquid crystal (PDLC), banana type liquid crystal, TN (Twisted)
Nematic mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe)
Field Switching mode, MVA (Multi-domain Ve)
Rical Alignment mode, PVA (Patterned Verti)
cal Element), ASV (Advanced Super View) mode, ASM (Axially Symmetrically named Micro-c)
ell) mode, OCB (Optical Compensated Birefrin)
gent) mode, ECB (Electrically Controlled Bi)
refringence mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liqu)
id Crystal) mode, PDLC (Polymer Dispersed Li)
Kid Crystal) mode, guest host mode and the like can be used. However, the present invention is not limited to this, and various liquid crystal elements can be used.

The electronic paper includes those displayed by molecules such as optical anisotropy and dye molecular orientation, those displayed by particles such as electrophoresis, particle movement, particle rotation, and phase change, and one end of the film. Those displayed by moving, those displayed by color development / phase change of molecules, those displayed by light absorption of molecules, those displayed by light emission when electrons and holes are combined, etc. .. For example, as electronic paper, microcapsule type electrophoresis, horizontally moving type electrophoresis, vertically moving type electrophoresis, spherical twist ball, magnetic twist ball, cylindrical twist ball method, charged toner, electronic powder fluid, magnetic electrophoresis type, magnetic heat sensitive Formula, electrowetting, light scattering (transparent cloudiness), cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bi-stable nematic liquid crystal, ferroelectric liquid crystal, bicolor dye / liquid crystal dispersion type, movable film, leuco dye extinction Color, photochromic, electrochromic, electrodeposition, flexible organic EL and the like can be used. However, the present invention is not limited to this, and various electronic papers can be used. Here, by using the microcapsule type electrophoresis, it is possible to solve the aggregation and precipitation of the electrophoretic particles, which are the drawbacks of the electrophoresis method. The electronic powder fluid has merits such as high-speed response, high reflectance, wide viewing angle, low power consumption, and memory property.

In the plasma display, a substrate having an electrode formed on the surface and a substrate having an electrode and a minute groove formed on the surface and a phosphor layer formed in the groove face each other at a narrow interval to enclose a rare gas. Has a structure. It should be noted that the display can be performed by generating ultraviolet rays by applying a voltage between the electrodes and illuminating the phosphor. As a plasma display, D
C-type PDP and AC-type PDP may be used. Here, as the plasma display panel, A
SW (Addless While Loop) drive, ADS (Address Display Se) that divides the subframe into a reset period, an address period, and a maintenance period
Partated) drive, CLEAR (Low Energy Address and)
Redox of False Contour Sequence) drive, A
LIS (Alternate Lighting of Surfaces) method, TE
RES (Techbology of Reciprocal Susfiner) drive or the like can be used. However, the present invention is not limited to this, and various plasma displays can be used.

A display device that requires a light source, for example, a liquid crystal display (transmissive liquid crystal display, semi-transmissive liquid crystal display, reflective liquid crystal display, direct-view liquid crystal display, projection liquid crystal display), or a grating light valve (GLV) is used. As a light source of the existing display device, a display device using a digital micromirror device (DMD), or the like, an electroluminescence, a cold cathode tube, a hot cathode tube, an LED, a laser light source, a mercury lamp, or the like can be used. However, the present invention is not limited to this, and various light sources can be used.

Types of Transistors As the transistors, various types of transistors can be used. Therefore, the type of transistor used is not limited. For example, amorphous silicon, polycrystalline silicon,
A thin film transistor (TFT) having a non-single crystal semiconductor film typified by microcrystal (also referred to as microcrystal or semi-amorphous) silicon can be used. When using a TFT, there are various merits. For example, since it can be manufactured at a lower temperature than that of single crystal silicon, it is possible to reduce the manufacturing cost or increase the size of the manufacturing apparatus. Since the manufacturing equipment can be made large, it can be manufactured on a large substrate. Therefore, a large number of display devices can be manufactured at the same time, so that the display devices can be manufactured at low cost. Further, since the production temperature is low, a substrate having weak heat resistance can be used. Therefore, the transistor can be manufactured on the transparent substrate. And
The transmission of light in the display element can be controlled by using a transistor on a transparent substrate. Alternatively, since the film thickness of the transistor is thin, a part of the film constituting the transistor can transmit light. Therefore, the aperture ratio can be improved.

By using a catalyst (nickel or the like) when producing polycrystalline silicon, it is possible to further improve the crystallinity and produce a transistor having good electrical characteristics. As a result, the gate driver circuit (scanning line drive circuit) and source driver circuit (signal line drive circuit)
, A signal processing circuit (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) can be integrally formed on the substrate.

By using a catalyst (nickel or the like) when producing microcrystalline silicon, it is possible to further improve the crystallinity and produce a transistor having good electrical characteristics. At this time, the crystallinity can be improved only by applying a heat treatment without performing laser irradiation. As a result, a part of the gate driver circuit (scanning line drive circuit) and the source driver circuit (analog switch, etc.) can be integrally formed on the substrate. Further, when laser irradiation is not performed for crystallization, unevenness in the crystallinity of silicon can be suppressed. Therefore, a beautiful image can be displayed.

However, it is possible to produce polycrystalline silicon or microcrystalline silicon without using a catalyst (nickel or the like).

It is desirable, but not limited to, improving the crystallinity of silicon to polycrystalline or microcrystals in the entire panel. The crystallinity of silicon may be improved only in a part of the panel. It is possible to selectively improve the crystallinity by selectively irradiating a laser beam or the like. For example, the laser beam may be irradiated only to the peripheral circuit region which is a region other than the pixel. Alternatively, the laser beam may be irradiated only to the area such as the gate driver circuit and the source driver circuit. Or part of the source driver circuit (
For example, the laser beam may be irradiated only to the area of the analog switch). As a result, the crystallization of silicon can be improved only in the region where the circuit needs to be operated at high speed. Since it is less necessary to operate the pixel region at high speed, the pixel circuit can be operated without any problem even if the crystallinity is not improved. Because there are few areas to improve crystallinity
The manufacturing process can also be shortened, the throughput can be improved, and the manufacturing cost can be reduced. Since the number of manufacturing devices required can be reduced, the manufacturing cost can be reduced.

Alternatively, a transistor can be formed by using a semiconductor substrate, an SOI substrate, or the like. As a result, it is possible to manufacture a transistor having a small variation in characteristics, size, shape, etc., a high current supply capacity, and a small size. By using these transistors, it is possible to reduce the power consumption of the circuit or to increase the integration of the circuit.

Alternatively, ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO
A transistor having a compound semiconductor or an oxide semiconductor such as the above, a thin film transistor obtained by thinning these compound semiconductors or an oxide semiconductor, or the like can be used. As a result, the manufacturing temperature can be lowered, and for example, a transistor can be manufactured at room temperature. As a result, the transistor can be formed directly on a substrate having low heat resistance, for example, a plastic substrate or a film substrate. It should be noted that these compound semiconductors or oxide semiconductors can be used not only for the channel portion of the transistor but also for other purposes.
For example, these compound semiconductors or oxide semiconductors can be used as resistance elements, pixel electrodes, and transparent electrodes. Further, since they can be formed or formed at the same time as the transistor, the cost can be reduced.

Alternatively, a transistor or the like formed by using an inkjet or a printing method can be used. As a result, it can be manufactured at room temperature, at a low degree of vacuum, or on a large substrate. Since it can be manufactured without using a mask (reticle), the layout of the transistor can be easily changed. Furthermore, since it is not necessary to use a resist,
Material costs can be reduced and the number of processes can be reduced. Further, since the film is attached only to the necessary part, the material is not wasted and the cost can be reduced as compared with the manufacturing method in which the film is formed on the entire surface and then etched.

Alternatively, an organic semiconductor, a transistor having carbon nanotubes, or the like can be used. As a result, the transistor can be formed on a bendable substrate. Therefore, it can be made strong against impact.

Further, transistors having various structures can be used. For example, a MOS type transistor, a junction type transistor, a bipolar transistor and the like can be used as the transistor. By using a MOS type transistor, the size of the transistor can be reduced. Therefore, a large number of transistors can be mounted. By using a bipolar transistor, a large current can flow. Therefore, the circuit can be operated at high speed.

Note that MOS-type transistors, bipolar transistors, and the like may be mixed and formed on one substrate. As a result, low power consumption, miniaturization, high-speed operation, and the like can be realized.

In addition, various transistors can be used.

The transistor can be formed by using various substrates. The type of substrate is not limited to a specific one. Examples of the substrate include single crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood substrate, cloth substrate (natural fiber (silk, cotton, linen), synthetic fiber). (Including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. can be used. .. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. Alternatively, a transistor may be formed using one substrate, then the transistor may be transposed to another substrate, and the transistor may be arranged on another substrate. The substrates on which the transistors are transferred include single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, linen), etc. Use synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. Can be done. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. Alternatively, a transistor may be formed using a certain substrate, and the substrate may be polished to be thin. The substrates to be polished include single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, linen), synthetic fibers. (Including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates,
A stainless steel substrate, a substrate having a stainless steel still foil, or the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. By using these substrates, it is possible to form a transistor having good characteristics, to form a transistor having low power consumption, to manufacture a device that is hard to break, to impart heat resistance, to reduce the weight, or to reduce the thickness.

The transistor configuration can take various forms. It is not limited to a specific configuration. For example, a multi-gate structure having two or more gate electrodes may be used. In the multi-gate structure, since the channel regions are connected in series, a plurality of transistors are connected in series. The multi-gate structure can reduce off-current and improve reliability by improving the withstand voltage of the transistor. Alternatively, due to the multi-gate structure, even if the drain-source voltage changes when operating in the saturation region, the drain-source current does not change much, and the slope of the voltage / current characteristics can be made flat. it can. By utilizing the characteristic that the slope of the voltage / current characteristic is flat, it is possible to realize an ideal current source circuit and an active load having a very high resistance value. As a result, a differential circuit or a current mirror circuit having good characteristics can be realized. As another example, a structure in which gate electrodes are arranged above and below the channel may be used. By adopting a structure in which the gate electrodes are arranged above and below the channel, the channel region is increased, so that the current value can be increased or the S value can be reduced by easily forming a depletion layer. When the gate electrodes are arranged above and below the channel, the configuration is such that a plurality of transistors are connected in parallel.

Alternatively, the structure may be such that the gate electrode is arranged above the channel region, or the gate electrode may be arranged below the channel region. Alternatively, it may have a normal stagger structure or a reverse stagger structure, the channel region may be divided into a plurality of regions, the channel regions may be connected in parallel, or the channel regions may be connected in series. Good. Alternatively, the source electrode and the drain electrode may overlap the channel region (or a part thereof). By forming the structure in which the source electrode and the drain electrode overlap the channel region (or a part thereof), it is possible to prevent the operation from becoming unstable due to the accumulation of electric charges in a part of the channel region. Alternatively, an LDD region may be provided. By providing the LDD region, it is possible to reduce the off-current or improve the reliability by improving the withstand voltage of the transistor. Alternatively, by providing the LDD region, even if the drain-source voltage changes when operating in the saturation region, the drain-source current does not change so much, and the slope of the voltage / current characteristic is made flat. be able to.

Various types of transistors can be used, and various substrates can be used for forming the transistors. Therefore, all the circuits necessary for realizing a predetermined function may be formed on the same substrate. For example, all of the circuits required to achieve a given function may be formed using a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, and are formed using various substrates. You may. Since all the circuits required to realize a predetermined function are formed using the same board, the cost can be reduced by reducing the number of parts, or the reliability can be improved by reducing the number of connection points with circuit parts. Can be planned. Alternatively, a part of the circuit necessary for realizing the predetermined function is formed on one substrate, and another part of the circuit necessary for realizing the predetermined function is formed on another substrate. You may be. That is, not all of the circuits required to realize a predetermined function need to be formed by using the same substrate. For example, a part of a circuit necessary to realize a predetermined function is formed on a glass substrate by using a transistor, and another part of a circuit necessary to realize a predetermined function is a single crystal substrate. An IC chip formed of a transistor formed by using a single crystal substrate may be connected to a glass substrate by COG (Chip On Glass), and the IC chip may be arranged on the glass substrate. Alternatively, the IC chip may be connected to a glass substrate using a TAB (Tape Automated Bonding) or a printed circuit board. Since a part of the circuit is formed on the same substrate in this way, it is possible to reduce the cost by reducing the number of parts or improve the reliability by reducing the number of connection points with the circuit parts. Alternatively, the circuit of the portion having a high drive voltage and the portion having a high drive frequency consumes a large amount of power, so that the circuit of such a portion is not formed on the same substrate. Instead, for example, on a single crystal substrate. If a circuit of that part is formed and an IC chip composed of the circuit is used, an increase in power consumption can be prevented.

It should be noted that one pixel means one element whose brightness can be controlled. Therefore, as an example, one pixel indicates one color element, and the brightness is expressed by one of the color elements. Therefore, at that time, in the case of a color display device composed of R (red) G (green) B (blue) color elements, the minimum unit of the image is the R pixel, the G pixel, and the B pixel. It shall consist of three pixels. The color element is not limited to three colors, and three or more colors may be used, or a color other than RGB may be used. For example, white may be added to make RGBW (W is white). Alternatively, one or more colors such as yellow, cyan, magenta, emerald green, and vermilion may be added to RGB. Alternatively, for example, a color similar to at least one of RGB may be added to RGB. For example, it may be R, G, B1 or B2. Both B1 and B2 are blue, but their frequencies are slightly different. Similarly, it may be R1, R2, G, B. By using such a color element, it is possible to perform a display closer to the real thing. By using such a color element, power consumption can be reduced. As another example, when the brightness of one color element is controlled by using a plurality of regions, one region may be one pixel. Therefore, as an example, when performing area gradation or sub-pixels (
If it has sub-pixels), there are multiple areas for controlling brightness for each color element.
Although the gradation is expressed as a whole, one pixel may be one of the areas for controlling the brightness. Therefore, in that case, one color element is composed of a plurality of pixels. Alternatively, even if there are multiple areas for controlling brightness in one color element, they can be grouped together.
One color element may be one pixel. Therefore, in that case, one color element is composed of one pixel. Alternatively, when the brightness of one color element is controlled by using a plurality of regions, the size of the region that contributes to the display may differ depending on the pixel. Alternatively, in a plurality of areas for controlling brightness, which are present for one color element, the signals supplied to each may be slightly different to widen the viewing angle. That is, 1
For each color element, the potentials of the pixel electrodes of each of the plurality of regions may be different. As a result, the voltage applied to the liquid crystal molecules differs depending on each pixel electrode. Therefore, the viewing angle can be widened.

When explicitly describing one pixel (three colors), it is assumed that the three pixels of R, G, and B are considered as one pixel. When explicitly describing one pixel (one color), when there are a plurality of regions for one color element, it is assumed that they are collectively regarded as one pixel.

The pixels may be arranged (arranged) in a matrix. Here, the fact that the pixels are arranged (arranged) in the matrix includes a case where the pixels are arranged side by side on a straight line in the vertical direction or the horizontal direction, or a case where the pixels are arranged on a jagged line. Therefore, for example, when full-color display is performed with three color elements (for example, RGB), stripes are arranged, or dots of the three color elements are delta-arranged. Furthermore, the case where the Bayer is arranged is also included. The color element is not limited to three colors, and may be more than three colors. For example, RGBW (W is white), or RGB with one or more colors such as yellow, cyan, and magenta added. The size of the display area may be different for each dot of the color element. As a result, it is possible to reduce the power consumption or extend the life of the display element.

An active matrix method having an active element in the pixel or a passive matrix method having no active element in the pixel can be used.

In the active matrix method, not only a transistor but also various active elements (active element, non-linear element) can be used as the active element (active element, non-linear element). For example, MIM (Metal Insulator Metal) and TFD
(Thin Film Diode) and the like can also be used. Since these devices have few manufacturing processes, it is possible to reduce the manufacturing cost or improve the yield. Further, since the size of the element is small, the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

In addition to the active matrix method, it is also possible to use a passive matrix type that does not use an active element (active element, non-linear element). Since no active element (active element, non-linear element) is used, the number of manufacturing processes is small, and the manufacturing cost can be reduced or the yield can be improved. Since no active element (active element, non-linear element) is used, the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

A transistor is an element having at least three terminals including a gate, a drain, and a source, and has a channel region between a drain region and a source region, and a drain region, a channel region, and a source region. A current can flow through and. Here, since the source and the drain change depending on the structure of the transistor, the operating conditions, and the like, it is difficult to limit which is the source or the drain. Therefore, in this document (specification, claims, drawings, etc.), the area that functions as a source and a drain may not be referred to as a source or a drain. In that case, as an example, they may be referred to as a first terminal and a second terminal, respectively. Alternatively, they may be referred to as a first electrode and a second electrode, respectively. Alternatively, it may be referred to as a source area or a drain area.

The transistor may be an element having at least three terminals including a base, an emitter, and a collector. Similarly, in this case, the emitter and the collector may be referred to as a first terminal and a second terminal.

The gate refers to the whole including the gate electrode and the gate wiring (also referred to as a gate line, a gate signal line, a scanning line, a scanning signal line, etc.) or a part thereof. The gate electrode refers to a conductive film of a portion that overlaps with a semiconductor forming a channel region via a gate insulating film. A part of the gate electrode is LDD (Lightly Do).
It may overlap with the ped Drain) region or the source region (or drain region) via the gate insulating film. The gate wiring is a wiring for connecting between the gate electrodes of each transistor, a wiring for connecting between the gate electrodes of each pixel, or a wiring for connecting the gate electrode and another wiring. Say.

However, the part (area,) that also functions as a gate electrode and also as a gate wiring.
Conductive film, wiring, etc.) also exists. Such a portion (region, conductive film, wiring, etc.) may be referred to as a gate electrode or a gate wiring. That is, the gate electrode and the gate wiring are
There are some areas that cannot be clearly distinguished. For example, when a part of the gate wiring that is stretched and the channel region overlaps, that portion (region, conductive film, wiring, etc.) functions as a gate wiring, but also as a gate electrode. It will be working. Therefore, such a portion (region, conductive film, wiring, etc.) may be referred to as a gate electrode or a gate wiring.

A portion (region, conductive film, wiring, etc.) formed of the same material as the gate electrode and formed and connected to the same island as the gate electrode may also be referred to as a gate electrode. Similarly, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate wiring and formed and connected to the same island as the gate wiring may also be referred to as a gate wiring. In a strict sense, such a portion (region, conductive film, wiring, etc.) may not overlap with the channel region or may not have a function of connecting to another gate electrode. However, due to specifications at the time of manufacture, parts (regions, conductive films, wiring, etc.) that are formed of the same material as the gate electrode or gate wiring and form the same island as the gate electrode or gate wiring are connected. ). Therefore, such a portion (region, conductive film, wiring, etc.) may also be referred to as a gate electrode or gate wiring.

For example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected by a conductive film formed of the same material as the gate electrode. Since such a portion (region, conductive film, wiring, etc.) is a portion (region, conductive film, wiring, etc.) for connecting the gate electrode and the gate electrode, it may be called a gate wiring, but it may be called a multi-gate. Can be regarded as one transistor, and therefore may be called a gate electrode. That is, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate electrode or the gate wiring and forming the same island as the gate electrode or the gate wiring.
May be called a gate electrode or a gate wiring. Further, for example, a conductive film of a portion connecting the gate electrode and the gate wiring and formed of a material different from the gate electrode or the gate wiring may also be referred to as a gate electrode or the gate wiring. You may call it.

The gate terminal refers to a part of the gate electrode (region, conductive film, wiring, etc.) or a part electrically connected to the gate electrode (region, conductive film, wiring, etc.). ..

When referred to as a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, or the like, the gate of the transistor may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scanning line, and the scanning signal line are simultaneously formed with the wiring formed in the same layer as the gate of the transistor, the wiring formed of the same material as the gate of the transistor, or the gate of the transistor. It may mean a film-formed wiring. Examples include wiring for holding capacity, power supply line, reference potential supply wiring, and the like.

The source is the source region, the source electrode, and the source wiring (source line, source signal line, etc.).
It refers to the whole including data lines, data signal lines, etc., or a part of them. The source region refers to a semiconductor region containing a large amount of P-type impurities (boron, gallium, etc.) and N-type impurities (phosphorus, arsenic, etc.). Therefore, the region containing a small amount of P-type impurities and N-type impurities, that is, the so-called LDD (Lightly Doped Drain) region, is
Not included in the source area. The source electrode refers to a conductive layer in a portion formed of a material different from the source region and electrically connected to the source region. However, the source electrode may also be referred to as a source electrode including the source region. The source wiring is a wiring for connecting between the source electrodes of each transistor, a wiring for connecting between the source electrodes of each pixel, or a wiring for connecting the source electrode and another wiring. Say.

However, the part that also functions as a source electrode and also as a source wiring (
Regions, conductive films, wiring, etc.) also exist. Such a portion (region, conductive film, wiring, etc.) may be referred to as a source electrode or a source wiring. That is, there is a region where the source electrode and the source wiring cannot be clearly distinguished. For example, if a part of the source wiring that is stretched and arranged overlaps with the source area, that part (area, conductive film, etc.)
Wiring, etc.) functions as source wiring, but it also functions as a source electrode. Therefore, such a portion (region, conductive film, wiring, etc.) may be referred to as a source electrode or a source wiring.

In addition, a part (region, conductive film, wiring, etc.) formed of the same material as the source electrode and formed and connected to the same island as the source electrode, and a portion (region) connecting the source electrode and the source electrode. , Conductive film, wiring, etc.) may also be referred to as a source electrode. Further, the portion that overlaps with the source region may also be referred to as a source electrode. Similarly, areas that are made of the same material as the source wiring and are connected by forming the same islands as the source wiring are also
It may be called source wiring. Such a portion (region, conductive film, wiring, etc.) may not have a function of connecting to another source electrode in a strict sense. However, due to specifications at the time of manufacture, there are parts (regions, conductive films, wirings, etc.) that are formed of the same material as the source electrode or the source wiring and are connected to the source electrode or the source wiring. Therefore, such a portion (region, conductive film, wiring, etc.) may also be referred to as a source electrode or source wiring.

Note that, for example, a conductive film of a portion connecting the source electrode and the source wiring and formed of a material different from the source electrode or the source wiring may also be referred to as a source electrode or the source wiring. You may call it.

The source terminal refers to a part of a region of the source region, a source electrode, and a portion (region, conductive film, wiring, etc.) electrically connected to the source electrode.

When called source wiring, source line, source signal line, data line, data signal line, etc.
The source (drain) of the transistor may not be connected to the wiring. In this case, the source wiring, source line, source signal line, data line, and data signal line are wiring formed in the same layer as the source (drain) of the transistor, and wiring formed of the same material as the source (drain) of the transistor. Alternatively, it may mean wiring formed at the same time as the source (drain) of the transistor. Examples include wiring for holding capacity, power supply line, reference potential supply wiring, and the like.

The drain is the same as the source.

The semiconductor device refers to a device having a circuit including a semiconductor element (transistor, diode, thyristor, etc.). Further, a device that can function by utilizing semiconductor characteristics may be referred to as a semiconductor device. Alternatively, a device having a semiconductor material is called a semiconductor device.

The display element includes an optical modulation element, a liquid crystal element, a light emitting element, and an EL element (organic EL element,
It refers to an inorganic EL element or an EL element containing an organic substance and an inorganic substance), an electron emitting element, an electrophoresis element, a discharge element, a light reflecting element, a light diffraction element, a digital micromirror device (DMD), and the like. However, it is not limited to this.

The display device refers to a device having a display element. The display device may include a plurality of pixels including a display element. The display device may include a peripheral drive circuit for driving a plurality of pixels. The peripheral drive circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device includes peripheral drive circuits arranged on the substrate by wire bonding, bumps, etc., so-called chip-on-glass (COG) connected IC chips, or TAB-connected IC chips. You can stay.
The display device may include a flexible printed circuit (FPC) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, or the like is attached. The display device is connected via a flexible printed circuit (FPC) or the like, and is a printed wiring board (P) to which an IC chip, a resistance element, a capacitance element, an inductor, a transistor, etc. are attached.
WB) may be included. The display device may include an optical sheet such as a polarizing plate or a retardation plate. The display device may include a lighting device, a housing, an audio input / output device, an optical sensor, and the like. Here, the lighting device such as the backlight unit includes a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, a light source (LED, a cold cathode tube, etc.), and a cooling device (water-cooled type,).
Air-cooled type) etc. may be included.

The lighting device refers to a device having a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflective sheet, a light source (LED, a cold cathode tube, a hot cathode tube, etc.), a cooling device, and the like.

The light emitting device means a device having a light emitting element or the like. When a light emitting element is provided as a display element, the light emitting device is one of specific examples of the display device.

The reflecting device means a device having a light reflecting element, a light diffraction element, a light reflecting electrode, and the like.

The liquid crystal display device means a display device having a liquid crystal element. For liquid crystal display devices,
There are direct-view type, projection type, transmissive type, reflective type, semi-transmissive type and the like.

The drive device refers to a device having a semiconductor element, an electric circuit, and an electronic circuit. For example, a transistor that controls the input of a signal from a source signal line into a pixel (sometimes called a selection transistor, a switching transistor, etc.), a transistor that supplies a voltage or current to a pixel electrode, or a voltage or current to a light emitting element. Is an example of a drive device. Further, a circuit that supplies a signal to the gate signal line (sometimes called a gate driver, a gate line drive circuit, etc.) and a circuit that supplies a signal to the source signal line (sometimes called a source driver, a source line drive circuit, etc.) ) Etc. are examples of drive devices.

The display device, the semiconductor device, the lighting device, the cooling device, the light emitting device, the reflecting device, the driving device, and the like may overlap each other. For example, the display device may include a semiconductor device and a light emitting device. Alternatively, the semiconductor device may have a display device and a drive device.

When it is explicitly stated that B is formed on A or B is formed on A, it is limited to B being formed in direct contact with A. Not done. It also includes the case where it is not in direct contact, that is, the case where another object intervenes between A and B.
Here, it is assumed that A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

Therefore, for example, when it is explicitly stated that the layer B is formed on the layer A (or on the layer A), the layer B is formed in direct contact with the layer A. It includes the case where another layer (for example, layer C, layer D, etc.) is formed in direct contact with the layer A, and the layer B is formed in direct contact with the layer A. The other layer (for example, layer C, layer D, etc.) may be a single layer or a plurality of layers.

Further, the same applies to the case where it is explicitly stated that B is formed above A, and the case is not limited to the case where B is in direct contact with A, and between A and B. It shall also include the case where another object intervenes in. Therefore, for example, the layer B is formed above the layer A.
In that case, the layer B is formed in direct contact with the layer A, and another layer (for example, layer C, layer D, etc.) is formed in direct contact with the layer A, and the layer B is formed on the layer A. It is assumed that the case where the layer B is formed in direct contact with the above is included. The other layer (for example, layer C, layer D, etc.) may be a single layer or a plurality of layers.

In addition, when it is explicitly stated that B is formed in direct contact with A, it includes the case where B is formed in direct contact with A, and is different between A and B. If an object intervenes, it shall not be included.

The same applies to the case where B is below A or B is below A.

Those explicitly described as singular are preferably singular. However, the present invention is not limited to this, and there may be a plurality. Similarly, for those explicitly described as plural, it is desirable that there are plural. However, the present invention is not limited to this, and it can be singular.

According to the present invention, the viewing angle characteristics can be improved as compared with the conventional case while maintaining the performance of the display device. Alternatively, the present invention can provide a highly reliable display device. Alternatively, the present invention can provide a display device having high contrast. Alternatively, the present invention can provide a lightweight display device. Alternatively, the present invention can provide a display device having a small size. Alternatively, according to the present invention, it is possible to provide a display device having high brightness. Alternatively, according to the present invention, it is possible to provide a display device having low power consumption. Alternatively, according to the present invention, it is possible to provide a display device having a high aperture ratio. Alternatively, according to the present invention, it is possible to provide a display device having a low manufacturing cost.

The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pressure dividing element which the pixel circuit of the display device of this invention has. The figure explaining the display device of this invention. The figure explaining an example of the top surface layout of the pixel of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining an example of the top surface layout of the pixel of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the pixel circuit of the display device of this invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention. The figure explaining the present invention.

(Embodiment 1)
In the present embodiment, the configuration of the pixel circuit and the operation of the pixel circuit included in the liquid crystal display device of the present invention will be described with reference to the drawings. The pixel circuit of the liquid crystal display device of the present invention has a plurality of liquid crystal elements in one pixel, and has a configuration in which the voltage applied to each of these liquid crystal elements is different. Specifically, one or both of the capacitance element and the resistance element connected to the liquid crystal element are provided to make the voltage applied to the liquid crystal element different.

However, the display element is not limited to the liquid crystal element, and various display elements (for example, a light emitting element (EL)).
Elements (EL elements containing organic and inorganic substances, organic EL elements, inorganic EL elements), electron emitting elements), electrophoresis elements, etc.) can be used.

There are various operating modes of the liquid crystal to which this embodiment can be applied. For example, TN
(Twisted Nematic) mode, IPS (In-Plane-Switch)
ing) mode, FFS (Fringe Field Switching) mode, M
VA (Multi-domine Vertical Element) mode, P
VA (Patterned Vertical Alignment), CPA (Con)
twinous Pinwheel Element) mode, ASM (Axial)
ly Symmetric aligned Micro-cell) mode, OCB (
Optical Compensated Birefringence) mode, FL
C (Ferroelectric Liquid Crystal) mode, AFLC (
Antiferroelectric Liquid Crystal) and the like. However, it is not limited to this. The liquid crystal to which the CPA mode is applied is ASV (Advance).
d Super View) Sometimes referred to as liquid crystal.

FIG. 1A shows an example of a one-pixel configuration of the liquid crystal display device of the present invention. Pixel 100
Is a first switch 101, a second switch 102, a first liquid crystal element 103, a second liquid crystal element 104, a third liquid crystal element 105, a first capacitance element 106, and a second. It has a capacitive element 107 and.

The first wiring 108, the first electrode of the first liquid crystal element 103, and the first electrode of the first capacitance element 106 are connected via the first switch 101. Second wiring 109 and second
The first electrode of the liquid crystal element 104 and the first electrode of the second capacitance element 107 are connected via a second switch 102. The second electrode of the first capacitive element 106 is the second capacitive element 1
It is connected to the second electrode of 07 and the first electrode of the third liquid crystal element 105.

The second electrodes of the first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 are connected to the common electrode 111.

The first wiring 108 and the second wiring 109 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 108 and the second wiring 109. However, it is not limited to this. A constant signal may be supplied regardless of the image.

The first switch 101 and the second switch 102 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, a case where a transistor is used as the first switch 101 and the second switch 102 will be described (
See FIG. 1 (B)). When a transistor is used, its polarity may be P-channel type or N-channel type. For example, in an N-channel transistor, when the gate-source voltage (V _gs ) exceeds the threshold voltage (V _th ), the source-drain state is assumed to be conductive. The voltage between the drain and source of the transistor is described as _{V ds.}

FIG. 1B shows a case where an N-channel transistor is used as a switch, and FIG. 1C shows a case where a P-channel transistor is used as a switch. In FIGS. 1B and 1C, the first switch 101N (or the first switch 101P) and the second switch 10
The gate of 2N (or the second switch 102P) is connected to the third wiring 110. The third wiring 110 functions as a scanning line.

As shown in FIG. 49, it may have two scanning lines. The circuit shown in FIG. 49 is similar to the circuit shown in FIG. 8 in which two signal lines are provided.

When a P-channel transistor is used as the switch, it is shown only in FIG. 1, but it is not limited to this. In other figures, at least one of the transistors can be replaced with a P-channel transistor.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

A video signal is input to the first wiring 108 and the second wiring 109. A scanning signal is input to the third wiring 110. The scanning signal is an H-level or L-level digital voltage signal. When the first switch 101 is an N-channel transistor, the scanning signal H
The level is the potential at which the first switch 101 and the second switch 102 can be turned on, and the L level of the scanning signal is the potential at which the first switch 101 and the second switch 102 can be turned off. Alternatively, when the first switch 101 and the second switch 102 are P-channel transistors, the H level of the scanning signal is a potential at which the first switch 101 and the second switch 102 can be turned off, and the L level of the scanning signal. Is the first switch 101 and the second switch 1
It is a potential that can turn on 02. The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Alternatively, the video signal may be an electric current. The current of this video signal may be analog or digital. It is desirable that the video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 100 will be described separately for the case where the first switch 101 and the second switch 102 are on and the case where the first switch 101 and the second switch 102 are off.

When the first switch 101 is turned on, the first wiring 108, the first electrode (pixel electrode) of the first liquid crystal element 103, and the first electrode of the first capacitance element 106 are connected to each other. It is electrically connected. When the second switch 102 is turned on, the second wiring 109, the first electrode (pixel electrode) of the second liquid crystal element 104, and the first electrode of the second capacitance element 107 are connected to each other. It is electrically connected. Therefore, the video signal is transmitted from the first wiring 108 to the first liquid crystal element 103.
Is input to the first electrode (pixel electrode) of the above and the first electrode of the first capacitance element 106. Alternatively, the video signal is input from the second wiring 109 to the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitance element 107. _{Therefore, the potential V 103} of the signal input to the first liquid crystal element 103 is substantially equal to the potential input from the first wiring 108, and the second
_{The potential V 104} of the signal input to the liquid crystal element 104 of the above is substantially equal to the potential input from the second wiring 109. _{Further, the potential V 105} of the first electrode of the third liquid crystal element 105 is a value divided by the first capacitance element 106 and the second capacitance element 107. Here, the capacitance value of the first capacitance element 106 is C ₁₀₆ , and the capacitance value of the second capacitance element 107 is C ₁₀₇ . Then, V ₁₀₅ = ΔV × C ₁₀₇ / (C ₁₀₆ + C ₁₀₇ ) + V ₁₀₃ . here,
ΔV = V _104- V ₁₀₃ . However, this is the case where each capacitive element has no initial charge.
Here, when C ₁₀₆ and C ₁₀₇ are the same size, V ₁₀₅ is V ₁₀₃ and V ₁₀
It becomes half of the sum of _4. Assuming that the potential of the common electrode is 0, the voltage applied to the first liquid crystal element is V ₁₀₃ , the voltage applied to the second liquid crystal element is V ₁₀₄ , and the voltage applied to the third liquid crystal element is V 103. It _{is expressed as V 105} = (V ₁₀₃ + V ₁₀₄ ) / 2. By making the potentials of the signal input from the first wiring 108 and the signal input from the second wiring 109 different, the voltage applied to each liquid crystal element can be made different, and if the orientation state of each is different. Can be made. Therefore, it is preferable that the signal input from the first wiring 108 and the signal input from the second wiring 109 have different potentials.

In this way, by supplying two signals having different potentials and using a capacitive element, the voltage can be divided inside the pixel to create an intermediate voltage (third voltage) between the two signals.
Then, the liquid crystal can be easily controlled by applying the third voltage to the third liquid crystal element 105. Further, the third voltage is a voltage between the voltage applied to the first liquid crystal element 103 and the voltage applied to the second liquid crystal element 104. Therefore, no matter what kind of gradation is displayed, an appropriate gradation can be displayed. In addition, appropriate gradation is displayed regardless of whether the polarity of the image signal is positive (when the image signal is higher than the common electrode) or negative (when the image signal is lower than the common electrode). be able to.

Further, it is possible to control the third liquid crystal element 105 by creating a third voltage while suppressing an increase in scanning lines, signal lines, transistors and the like. This makes it possible to increase the aperture ratio,
Power consumption can be reduced. Further, since the pixel layout can be arranged with a margin, defects such as short circuits that may occur due to dust or the like generated in the manufacturing process can be reduced, and the yield is improved. As a result, the manufacturing cost can be reduced. Further, since the third liquid crystal element 105 can be controlled without newly providing a wiring functioning as a signal line for controlling the third liquid crystal element, the number of connection points between the glass substrate and the external drive circuit increases. do not. As a result, high reliability can be maintained.

It is desirable that the capacitance values of the first capacitance element 106 and the second capacitance element 107 are substantially the same. Since the capacitance values of the two capacitance elements are approximately equal, the divided potential becomes an intermediate value of the potentials supplied to the two capacitance elements. If there is a difference in the capacitance value, it will be biased to either potential, and the liquid crystal element cannot be controlled evenly. Therefore, it is desirable that the capacitance value of the first capacitance element 106 and the capacitance value of the second capacitance element 107 are substantially equal to each other. However, it is not limited to this.

When the first switch 101 is off, the first wiring 108, the first electrode (pixel electrode) of the first liquid crystal element 103, and the first electrode of the first capacitance element 106 are connected. It is electrically cut off. When the second switch 102 is off, the second wiring 109, the first electrode (pixel electrode) of the second liquid crystal element 104, and the first electrode of the second capacitance element 107 are connected to each other. It is electrically cut off. Therefore, the first electrode of the first liquid crystal element 103 and the first capacitance element 106
The first electrode of the second liquid crystal element 104, the first electrode of the second liquid crystal element 104, and the first electrode of the second capacitance element 107 are in a floating state. The third liquid crystal element 105 is connected to the first liquid crystal element 103 via the first capacitance element 106. However, due to the charge conservation law, the electric charge stored in the third liquid crystal element 105 does not leak to the first liquid crystal element 103. Similarly
The third liquid crystal element 105 is connected to the second liquid crystal element 104 via the second capacitive element 107. However, due to the law of conservation of electric charge, the electric charge stored in the third liquid crystal element 105 is
There is no leakage toward the second liquid crystal element 104. Therefore, the first to third liquid crystal elements hold the potential of the signal input immediately before.

The first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 have transmittances according to the video signal.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

In addition, each liquid crystal element may be divided into a plurality of parts. For example, FIG. 11 shows a case where the third liquid crystal element 105 is divided into two, a third liquid crystal element 105a and a fourth liquid crystal element 105b.
Shown in. Similarly, the first liquid crystal element 103 and the second liquid crystal element 104 may be divided into a plurality of pieces. The same applies to figures other than FIG.

In addition, in FIGS. 1 and 11, when the first switch 101 and the second switch 102 are transistors, these gates are connected to the third wiring 110. But,
Not limited to this. The gate of the first switch 101 and the gate of the second transistor may be connected to different wirings (see FIG. 49). These are the same for figures other than those shown in FIGS. 1 and 11.

Note that, in FIGS. 1 and 11, the first switch 101 and the second switch 102 are connected to different signal lines, but the present invention is not limited to this. As shown in FIG. 8 or FIG. 17, the first switch 101 and the second switch 102 may be connected to the same wiring. These are the same for figures other than those shown in FIGS. 1 and 11.

Although the liquid crystal element exhibits a voltage holding characteristic, its holding rate is not 100%. Therefore, in FIGS. 1 and 11, the voltage may be held by arranging a capacitance element (hereinafter, simply referred to as a holding capacitance) serving as a holding capacitance in each liquid crystal element. The holding capacity may be arranged for all the liquid crystal elements, or may be arranged only for some liquid crystal elements. The holding capacitance is arranged between each pixel electrode and the wiring that functions as a capacitance line connected to the pixel electrode. Each holding capacity may be connected to a different capacity line or may be connected to the same capacity line. Alternatively, some holding capacities may be connected to the same capacitance line, and other holding capacities may be connected to different capacitance lines. Further, the capacitance line may be shared with another pixel. For example, the pixels in the previous row and the pixels in the next row can be shared. By sharing the capacitance line between different pixels, the number of wires can be reduced and the aperture ratio can be improved. Further, the capacitance line may be shared with the scanning line. By sharing the capacitance line with the scanning line, the number of wires can be reduced and the aperture ratio can be improved. When the capacitance line is shared with the scanning line, it is desirable to use the scanning line of the pixel of the adjacent row (the pixel of the previous row). This is because the i-1st row (the previous row) has already completed the signal selection when the pixel in the i-th row is selected. When the liquid crystal is IPS, FFS, or the like, the common electrode is arranged on the substrate on which the transistor is formed. Therefore, the capacitance line may be shared with the common electrode. When the capacitance wire is shared with the common electrode, the number of wires can be reduced and the aperture ratio can be improved. In addition, it should be noted.
The holding capacity may be divided into a plurality of pieces as in the case of the liquid crystal element in FIG. These are the same for figures other than those shown in FIGS. 1 and 11.

Next, the display device having the pixel 100 of FIG. 1 described above will be described with reference to FIG. 31.

The display device includes a signal line drive circuit 1911, a scanning line drive circuit 1912, and a pixel unit 1913. In the pixel unit 1913, the first wiring S1-1 to Sm_1, the second wiring S1_2 to Sm_2, and the scanning line driving circuit 19 are arranged so as to extend in the column direction from the signal line driving circuit 1911.
It has a third wiring G1 to Gn extending in the row direction from 12 and pixels 1914 arranged in a matrix. The first and second wires function as signal lines. The third wire functions as a scanning line. Then, each pixel 1914 is connected to the first wiring Sj_1 (signal line S1).
It is connected to any one of _1 to Sm_1), the second wiring Sj_2 (any one of the signal lines S1_2 to Sm_2), and the third wiring Gi (any one of the scanning lines G1 to Gn). ..

The first wiring Sj_1, the second wiring Sj_2, and the third wiring Gi correspond to the first wiring 108, the second wiring 109, and the third wiring 110 in FIG. 1, respectively.

When a row of pixels to be operated is selected by the signal output from the scanning line drive circuit 1912, each pixel belonging to the same row is selected at the same time. The video signal output from the signal line drive circuit 1911 is written to the pixels in the selected line. At this time, potentials corresponding to the brightness data of each pixel are supplied to the first wirings S1-1 to Sm_1 and the second wirings S1_1 to Sm_2.

For example, when the data writing period of the i-th row is completed, the signal is written to the pixels belonging to the i + 1th line. Then, the pixel whose data writing period has ended in the i-th row has a transmittance corresponding to the signal.

A plurality of signal line drive circuits 1911 or scanning line drive circuits 1912 may be arranged. For example, the first wiring Sj_1 (any one of the signal lines S1-1 to Sm_1)
May be driven by the first signal line drive circuit, and the second wiring Sj_2 (any one of the signal lines S1_2 to Sm_2) may be driven by the second signal line drive circuit. In that case, the pixel unit 191
A first signal line drive circuit and a second signal line drive circuit may be arranged above and below the third signal line drive circuit. For example, the first signal line drive circuit is arranged on one side on the main surface of the substrate, the second signal line drive circuit is arranged on the other side opposite to each other, and the second signal line drive circuit is sandwiched between the two signal line drive circuits. Pixel part 1 in the area
913 may be arranged.

In addition, in order to suppress display unevenness such as deterioration and flicker of the liquid crystal material, the polarity of the voltage applied to the pixel electrode is reversed with respect to the potential of the common electrode (common potential) in the liquid crystal capacity at regular intervals. It is preferable to use an inverting drive that drives the vehicle. In the present specification
When the potential of the pixel electrode is higher than that of the common electrode, the positive voltage is applied to the liquid crystal capacity, and when the potential of the counter electrode is higher than that of the pixel electrode, the negative voltage is applied to the liquid crystal capacity. Further, the image signal input from the signal line when the positive voltage is applied to the liquid crystal capacitance is used as the positive signal, and the image signal input from the signal line when the negative voltage is applied is used as the negative electrode. Notated as a sex signal. Examples of the inverting drive include a frame inverting drive, a source line inverting drive, a gate line inverting drive, a dot inverting drive, and the like.

The frame inversion drive is a drive method in which the polarity of the voltage applied to the liquid crystal capacity is inverted for each frame period. The one-frame period corresponds to the period for displaying an image for one pixel, and the period is not particularly limited, but at least 1/60 second so that the viewer does not feel flicker. The following is preferable.

Further, in the source line inversion drive, the polarity of the voltage applied to the liquid crystal capacitance belonging to the pixel connected to the same signal line is inverted with respect to the liquid crystal capacitance belonging to the pixel connected to the adjacent signal line, and further. This is a driving method in which frame inversion is performed for each pixel. On the other hand, in the gate line inversion drive, the polarity of the voltage applied to the liquid crystal capacitance belonging to the pixel connected to the same wiring functioning as the scanning line is applied to the liquid crystal capacitance belonging to the pixel connected to the adjacent scanning line. Invert,
Further, it is a driving method in which frame inversion is performed for each pixel.

Further, the dot inversion drive is a drive method in which the polarity of the voltage applied to the liquid crystal capacitance is inverted between adjacent pixels, and is a drive method in which the source line inversion drive and the gate line inversion drive are combined.

By the way, the above-mentioned frame inversion drive, source line inversion drive, gate line inversion drive,
When the dot inversion drive or the like is adopted, the width of the potential required for the image signal written in the signal line is doubled as compared with the case where the inversion drive is not performed. Therefore, in order to solve this problem, in the case of frame inversion drive or gate line inversion drive, a common inversion drive that inverts the potential of the counter electrode may be further adopted.

The common inversion drive is a drive method in which the potential of the common electrode is changed in synchronization with the inversion of the polarity applied to the liquid crystal capacitance, and the potential required for the image signal written in the signal line by performing the common inversion drive is The width can be reduced.

Further, one pixel may have a plurality of the above-mentioned pixel configurations. For example, one pixel may have a plurality of sub-pixels, and the plurality of sub-pixels may be used to express the gradation of one pixel. Signal lines connected to different sub-pixels may be shared and used among the sub-pixels. By supplying different potentials to each of the capacitance lines connected to the sub-pixels, it is possible to apply different voltages to the liquid crystal capacitances belonging to each sub-pixel. In this way
It is also possible to further improve the viewing angle by utilizing the difference in the orientation of the liquid crystal in each sub-pixel.

Although the holding capacity is not specified in FIG. 1, it is desirable to arrange the holding capacity as described above. By arranging the holding capacitance, the influence of the leakage current of the liquid crystal element can be reduced, and the potential can be easily held. It is also possible to reduce the influence of switching noise such as feedthrough. Therefore, as an example of the case where the holding capacity is illustrated, FIG. 16 shows a case where the holding capacity is arranged in the circuit of FIG.

In FIG. 16, the pixel 400 includes the first switch 401, the second switch 402, and the like.
The first liquid crystal element 403, the second liquid crystal element 404, the third liquid crystal element 405, the first capacitance element 406, the second capacitance element 407, the third capacitance element 408, and the fourth Capacitive element 4
It has 09 and a fifth capacitive element 417.

The first wiring 410 is the first electrode of the first liquid crystal element 403, the first electrode of the first capacitance element 406, and the first electrode of the second capacitance element 407 via the first switch 401. It is connected to the. The second wiring 411 is the first electrode of the second liquid crystal element 404, the first electrode of the third capacitance element 408, and the first electrode of the fourth capacitance element 409 via the second switch 402. It is connected to the. The second electrode of the first capacitance element 406 and the second electrode of the third capacitance element 408 are connected to the first electrode of the third liquid crystal element 405 and the first electrode of the fifth capacitance element 417. ing. The second electrode of the second capacitance element 407 is connected to the fourth wiring 413, and the second electrode of the fourth capacitance element 409 is connected to the fifth wiring 414. Fifth capacitive element 417
The second electrode of the above is connected to the sixth wiring 415.

The second electrodes of the first liquid crystal element 403, the second liquid crystal element 404, and the third liquid crystal element 405 are connected to the common electrode 416.

The first wiring 410 and the second wiring 411 function as signal lines. Therefore, the first
An image signal is usually supplied to the wiring 410 and the second wiring 411. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 412 functions as a scanning line. The fourth wiring 413, the fifth wiring 414, and the sixth wiring 415 function as capacitance lines.

The first switch 401 and the second switch 402 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, a case where a transistor is used as the first switch 401 and the second switch 402 will be described.
When a transistor is used, its polarity may be P-channel type or N-channel type.

FIG. 16B shows a case where an N-channel transistor is used as the switch. FIG. 16
In (B), the gates of the first switch 401N and the second switch 402N are connected to the third wiring 412. The third wire 760 functions as a scanning line.

As shown in FIG. 16, the holding capacitance may be arranged in all the liquid crystal elements, but the present invention is not limited to this. For example, as shown in FIG. 7, the holding capacitance may be arranged only in a part of the liquid crystal elements. Each holding capacity may be connected to a different capacity line, may be connected to the same capacity line, or may be partially the same and partly connected to a different capacity line. May be good. Further, the capacitance line may be shared with another pixel. For example, the pixels in the previous row and the pixels in the next row can be shared. By sharing the capacitance line between different pixels, the number of wires can be reduced and the aperture ratio can be improved. Alternatively, the capacitance line may be shared with the scanning line. By sharing the capacitance line with the scanning line, the number of wires can be reduced and the aperture ratio can be improved. When the capacitance line is shared with the scanning line, it is desirable to use the scanning line of the adjacent pixel (the pixel in the previous row). This is because the i-1st row (the previous row) has already completed the signal selection when the pixel in the i-th row is selected. When the liquid crystal is IPS, FFS, or the like, the common electrode is arranged on the substrate on which the transistor is formed. Therefore, the capacitance line may be shared with the common electrode. When the capacitance wire is shared with the common electrode, the number of wires can be reduced and the aperture ratio can be improved.

It is desirable that a constant potential is supplied to the capacitance line. However, it is not limited to this. For example, in FIG. 7, a signal that changes periodically a plurality of times may be supplied to each capacitance line, that is, the fourth wiring 413 and the fifth wiring 414 during one frame period. Then, signals inverted to each other may be added to each capacitance line, that is, the fourth wiring 413 and the fifth wiring 414. As a result, the effective voltage applied to the first liquid crystal element 404, the second liquid crystal element 403, and the like can be changed.

Note that FIG. 16 has two wirings that function as capacitance lines, but the present invention is not limited to these. Capacitance lines can be combined into one. Furthermore, the common electrode and the capacitance line can be shared. This is because the common electrode and the capacitance line are not particularly limited except that they must be kept at the same potential. FIG. 50 shows a diagram in which the capacitance lines are grouped together and the common electrode and the capacitance line are shared. FIG. 50 has the same effect as that of FIG.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

In other drawings such as FIG. 1 used in the above description, the transistors used as the first switch or the second switch are connected to different signal lines, but the present invention is not limited to this. These may be connected to the same signal line. For example, FIG. 1 shows an example in which two signal lines are provided as one and a plurality of scanning lines are provided. Alternatively, FIG. 17 shows an example in which the scanning lines in FIG. 8 are combined into one.

In addition, in FIGS. 8 and 17, it is also possible to arrange the holding capacitance in different liquid crystal elements as shown in FIGS. 7 and 16 described above. Therefore, as an example, FIGS. 18 and 19 show an example in which the holding capacitance is arranged in the first and second liquid crystal elements in the same manner as in FIG. 7.

Therefore, the contents described in FIGS. 1 and 7 can also be applied to FIGS. 8, 16, 17, and 18.

In FIG. 8, the pixel 450 has a first switch 451 and a second switch 452, a first liquid crystal element 453, a second liquid crystal element 454, a third liquid crystal element 455, and a first capacitance. It has an element 456 and a second capacitive element 457.

The first wiring 458, the first electrode of the first liquid crystal element 453, and the first electrode of the first capacitance element 456 are connected via the first switch 451. In addition, the first wiring 45
8 and the first electrode of the second liquid crystal element 454 and the first electrode of the second capacitance element 457 are
It is connected via a second switch 452. The second electrode of the first capacitance element 456 and the second electrode of the second capacitance element 457 are connected to the first electrode of the third liquid crystal element 455.

A transistor can be used as the switch. First switch 451N
Gate is connected to the second wire 459. The gate of the second switch 452N is the third
It is connected to the wiring 460 of.

The second electrodes of the first liquid crystal element 453, the second liquid crystal element 454, and the third liquid crystal element 455 are connected to the common electrode 461.

The first wiring 458 functions as a signal line. Therefore, an image signal is usually supplied to the first wiring 458. However, it is not limited to this. A constant signal may be supplied regardless of the image. The second wire 459 and the third wire 460 function as scanning lines.

First, consider the operations of FIGS. 8 and 18. First, an active signal is supplied to the third wire 460 and the second switch 452 is turned on. Here, the active signal means a signal capable of turning on the second switch 452. When the second switch 452 is turned on, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the second liquid crystal element 454 and the first electrode of the second capacitance element 457. ..

Next, the second switch 452 is turned off, an active signal is supplied to the second wiring 459, and the first switch 451 is turned on. The active signal here is the second switch 4.
A signal that can turn on 52. Then, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the first liquid crystal element 453 and the first electrode of the first capacitance element 456. It is desirable that the video signal supplied at this time has a potential different from that when the second switch 452 is turned on. Since the potentials are different, different voltages can be supplied to each liquid crystal element, and the viewing angle can be improved.

When the first switch 451 is on, the third liquid crystal element 455 is capacitively coupled to the pixel electrode of the first liquid crystal element 453 via the first capacitive element 456. Therefore, the potential of the pixel electrode of the third liquid crystal element 455 changes according to the voltage supplied from the first wiring 458 when the first switch 451 is on.

Similarly, when the first switch 451 is on, the second liquid crystal element 454 and the pixel electrode of the first liquid crystal element 453 via the first capacitive element 456 and the second capacitive element 457. Capacitive coupling. Therefore, the potential of the pixel electrode of the second liquid crystal element 454 changes according to the voltage supplied from the first wiring 458 when the first switch 451 is on.

Next, the first switch 451 is turned off, and the potential of each liquid crystal element is maintained.
By operating in this way, the voltage applied to each liquid crystal element can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. Each transistor can be driven by various methods such as on / off timing and signal line potential.

In FIG. 18, it is desirable that a constant potential is supplied to each capacitance line.
However, it is not limited to this. For example, during one frame period, each capacitance line, that is, the first capacitance line and the second capacitance line may be supplied with a signal that changes periodically a plurality of times. And
Signals inverted from each other may be added to each capacitance line, that is, the first capacitance line and the second capacitance line. As a result, the effective voltage applied to the first liquid crystal element 453, the second liquid crystal element 454, and the like can be changed. By operating in this way, the potential of each liquid crystal element can be made different. As a result, the viewing angle can be widened.

Next, consider the operations of FIGS. 17 and 19.

An active signal is supplied to the second wire 459, and the first switch 451 and the second switch 452 are turned on. Then, the first electrode (pixel electrode) of the first liquid crystal element 453,
A video signal is transmitted from the first wiring 458 to the first electrode of the first capacitance element 456, the first electrode (pixel electrode) of the second liquid crystal element 454, and the first electrode of the second capacitance element 457. Be supplied.

At this time, if a transistor is used for the first switch 451 and the second switch 452, an on-resistance is generated. It is desirable that the on-resistance of the first switch 451 is higher than the on-resistance of the second switch 452. A high on-resistance of a transistor means that the ratio (W / L) of the channel width to the channel length L is small. By increasing the on-resistance of the transistor in this way, the potential of the pixel electrode of each liquid crystal element is determined by the balance of the leakage current and the like of each capacitance element and each holding capacitance. Then, different voltages can be applied to each liquid crystal element, and the viewing angle can be improved. However, the present invention is not limited to this, and the first switch 451 and the second switch 452 can have substantially equal on-resistances.

Next, the first switch 451 and the second switch 452 are turned off, and the voltage applied to each liquid crystal element is maintained.

By operating in this way, the voltage applied to each liquid crystal element can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. Each transistor can be driven by various methods such as on / off timing and signal line potential.

In FIG. 19, it is desirable that a constant potential is supplied to each capacitance line.
However, it is not limited to this. For example, during one frame period, each capacitance line, that is, the first capacitance line 463 and the second capacitance line 465 may be supplied with signals that change periodically a plurality of times. Then, signals inverted to each other may be added to each capacitance line, that is, the first capacitance line 463 and the second capacitance line 465. As a result, the first liquid crystal element 453 and the second liquid crystal element 4
The effective voltage applied to 54 etc. can be changed. By operating in this way, the potentials of the liquid crystal elements can be made different. As a result, the viewing angle can be widened.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

FIG. 2 shows an example of a configuration of a pixel circuit included in the liquid crystal display device of the present invention, which is different from that of FIG. The pixel 150 includes a first switch 151, a second switch 152, a first liquid crystal element 153, a second liquid crystal element 154, a third liquid crystal element 155, a first capacitance element 156, and a first. It has two capacitance elements 157 and a third capacitance element 161.

The first wiring 158 is connected to the first electrode of the first liquid crystal element 153 and the first electrode of the first capacitance element 156 via the first switch 151. The second wiring 159 is connected to the first electrode of the second liquid crystal element 154 and the first electrode of the second capacitance element 157 via the second switch 152. The second electrode of the first capacitive element 156 is the second capacitive element 1
The third capacitance element 1 is connected to the second electrode of 57 and the first electrode of the third capacitance element 161.
The second electrode of 61 is connected to the first electrode of the third liquid crystal element 155.

The second electrodes of the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 are connected to the common electrode.

The first wiring 158 and the second wiring 159 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 158 and the second wiring 159. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 160 functions as a scanning line.

The first switch 151 and the second switch 152 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, a case where a transistor is used as the first switch 151 and the second switch 152 will be described.
When a transistor is used, its polarity may be P-channel type or N-channel type.

FIG. 2B shows a case where an N-channel transistor is used as the switch. FIG. 2 (B
), The gates of the first switch 151N and the second switch 152N are connected to the third wiring 110. The third wiring 160 functions as a scanning line.

As in FIG. 1, FIG. 2 may have two scanning lines as shown in FIG. 49.
A P-channel transistor can also be used as the switch.

A video signal is input to the first wiring 158 and the second wiring 159. A scanning signal is input to the third wiring 160. The scanning signal is an H-level or L-level digital voltage signal. When the first switch 151 and the second switch 152 are N-channel transistors, the H level of the scanning signal is the potential at which the first switch 151 and the second switch 152 can be turned on, and the L level of the scanning signal is the first. 1 switch 151 and 2nd switch 1
It is a potential that can turn off 52. Alternatively, the first switch 151 and the second switch 15
When 2 is a P-channel transistor, the H level of the scanning signal is the potential at which the first switch 151 and the second switch 152 can be turned off, and the L level of the scanning signal is the first switch 1.
It is a potential that can turn on the 51 and the second switch 152. The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Or
The video signal may be an electric current. The current of this video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

Regarding the operation of the pixel 150 in FIG. 2, the first switch 151 and the second switch 1
The case where 52 is on and the case where the first switch 151 and the second switch 152 are off will be described separately.

When the first switch 151 is turned on, the first wiring 158, the first electrode (pixel electrode) of the first liquid crystal element 153, and the first electrode of the first capacitance element 156 are connected. It is electrically connected. When the second switch 152 is turned on, the second wiring 159, the first electrode (pixel electrode) of the second liquid crystal element 154, and the first electrode of the second capacitance element 157 are connected. It is electrically connected. Therefore, the video signal is from the first wiring 158 to the first liquid crystal element 153.
Is input to the first electrode (pixel electrode) of the first capacitance element 156 and the first electrode (pixel electrode) and the second electrode of the second wiring 159 to the second liquid crystal element 154. Capacitive element 157
Is input to the first electrode of. _{Therefore, the potential V 1 of the} signal input to the first liquid crystal element 153
₅₃ is substantially equal to the potential input from the first wiring 158, and the potential V ₁₅₄ of the signal input to the second liquid crystal element 154 is approximately equal to the potential input from the second wiring 159. Also,
The third of the first potential _{V 161} of the electrode 3 in FIG. 1 of the liquid crystal element 105 of the capacitor 161
The potential V 161 of the first electrode of the third capacitance element ₁₆₁ is V ₁₅₃ and V _{154 when the potential V 105} of the first electrode is the same as that of the first electrode and C ₁₀₆ and C _{107 have the same magnitude.} Is roughly equal to half of the sum of. The potential of the first electrode of the third liquid crystal element 155 is V ₁₅₅ . Here, assuming that the potential of the common electrode is 0, the voltage applied to the third liquid crystal element 155 is V ₁₅₅ . V ₁₅₅ is a value divided by the third capacitance element 161 and the third liquid crystal element 155. In this way, by using the capacitive element, a different voltage can be further supplied to the liquid crystal element. In this way, the voltage applied to each liquid crystal element can be made different, and the orientation state of each can be made different.

In this way, by supplying two signals having different potentials and using a capacitive element, the voltage can be divided inside the pixel to create a third voltage. Then, the liquid crystal can be easily controlled by applying the third voltage to the third liquid crystal element 105. Further, the third voltage is a voltage between the voltage supplied to the first liquid crystal element 103 and the voltage supplied to the second liquid crystal element 104. Therefore, no matter what kind of gradation is displayed, an appropriate gradation can be displayed. In addition, appropriate gradation is displayed regardless of whether the polarity of the image signal is positive (when the image signal is higher than the common electrode) or negative (when the image signal is lower than the common electrode). be able to.

Further, it is possible to control the third liquid crystal element 155 by creating a third voltage while suppressing an increase in scanning lines, signal lines, transistors and the like. As a result, the aperture ratio can be increased and the power consumption can be reduced. Further, since the pixel layout can be arranged with a margin, defects such as short circuit due to dust generated in the manufacturing process can be reduced, and the yield is improved. As a result, the manufacturing cost can be reduced. Further, since the third liquid crystal element 155 can be controlled without newly providing a signal line, the number of connection points between the glass substrate and the external drive circuit does not increase. As a result, high reliability can be maintained.

When the first switch 151 is off, the first wiring 158, the first electrode (pixel electrode) of the first liquid crystal element 153, and the first electrode of the first capacitance element 156 are connected. It is electrically cut off. When the second switch 152 is off, the second wiring 159, the first electrode (pixel electrode) of the second liquid crystal element 154, and the first electrode of the second capacitance element 157 are connected. It is electrically cut off. Therefore, the first electrode of the first liquid crystal element 153 and the first capacitance element 156
The first electrode, the first electrode of the second liquid crystal element 154, and the first electrode of the second capacitance element 157 are in a floating state. Then, the third liquid crystal element 155 is the first with the first liquid crystal element 153.
It is connected via the capacitance element 156 and the third capacitance element 161. However, due to the charge conservation law, the electric charge stored in the third liquid crystal element 105 does not leak to the first liquid crystal element 153. It is connected to the first liquid crystal element 153 via a second capacitance element 157. However, due to the law of conservation of electric charge, the electric charge stored in the third liquid crystal element 155 is the second liquid crystal element 1.
It does not leak to 54. Therefore, the first to third liquid crystal elements hold the potential of the signal input immediately before.

The first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 have transmittances according to the video signal.

That is, in FIG. 2, as compared with FIG. 1, the portion of the third liquid crystal element 105 of FIG. 1 is connected in series with the third capacitance element 161 of FIG. 2 and the third liquid crystal element 155. Corresponds to the case of replacement. Therefore, the content described in FIG. 1 can also be applied to FIG. For example, as shown in FIG. 15, a device in which the third capacitance element 161 and the third liquid crystal element 155 are connected in series may be divided into a plurality of elements. Alternatively, as shown in FIG. 12, the capacitive element may be omitted and only the liquid crystal element may be divided into a plurality of parts.

In FIG. 2, the portion of the third liquid crystal element 105 in FIG. 1 is replaced with the third capacitive element 161 and the third.
It was replaced with a liquid crystal element 155 connected in series, but the present invention is not limited to this. It may be replaced with another liquid crystal element. For example, FIG. 13 shows a case where the first liquid crystal element 153 is replaced with one in which a capacitance element and a liquid crystal element are connected in series. In this case as well, as in FIG. 12, FIG.
As shown in, it may be divided into a plurality of parts.

FIG. 2 is a diagram in which the portion of the third liquid crystal element 105 in FIG. 1 is replaced with one in which the third capacitance element 161 and the third liquid crystal element 155 of FIG. 2 are connected in series. The same deformation as in 1 is possible. That is, as shown in FIG. 7, a holding capacity may be added to a part of each liquid crystal element, or as shown in FIG. 16, a holding capacity may be added to all of the liquid crystal elements. Further, as shown in FIG. 8 or 18, the number of scanning lines may be two and the signal lines may be combined into one, or FIG. 17
Alternatively, as shown in FIG. 19, both the scanning line and the signal line may be combined into one line.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

FIG. 3 shows an example of a configuration different from the others regarding the configuration of the pixel circuit included in the liquid crystal display device of the present invention. The pixel 200 includes a first switch 201, a second switch 202, a transistor 203, a first liquid crystal element 204, a second liquid crystal element 205, and a third liquid crystal element 2.
It has 06, a first capacitive element 207, and a second capacitive element 208.

The first wiring 209 is connected to the first electrode of the first liquid crystal element 204 and the first electrode of the first capacitance element 207 via the first switch 201. The second wiring 210 is the second
Is connected to the first electrode of the liquid crystal element 205 and the first electrode of the second capacitance element 208 via the second switch 202. Further, the second wiring 210 is the first of the third liquid crystal element 206.
It is connected to the electrode of No. 1 via a transistor 203. The gates of the first switch 201, the second switch 202, and the transistor 203 are connected to the third wiring 211. The second electrode of the first capacitance element 207 is connected to the second electrode of the second capacitance element 208 and the first electrode of the third liquid crystal element 206.

The transistor 203 operates as a switch having a higher on-resistance than the first switch 201 and the second switch 202. That is, it can be treated like a switch in which resistance elements are connected in series. However, it is not limited to this. The on-resistance of the transistor 203 may be lower than that of the first switch 201 and the second switch 202.

In FIG. 3, the transistor 203 is an N-channel type, but the present invention is not limited to this. That is, the transistor 203 may be a P-channel type transistor.

The second electrodes of the first liquid crystal element 204, the second liquid crystal element 205, and the third liquid crystal element 206 are connected to the common electrode.

The first wiring 209 and the second wiring 210 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 209 and the second wiring 210. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 211 functions as a scanning line.

The first switch 201 and the second switch 202 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, when a transistor is used as the first switch 101 and the second switch 102, the polarity may be P-channel type or N-channel type.

FIG. 3B shows a case where an N-channel transistor is used as the switch. FIG. 2 (B
), The gates of the first switch 201N and the second switch 202N are connected to the third wiring 110. The third wiring 211A functions as a scanning line.

As in FIG. 1, FIG. 2 may have two scanning lines as shown in FIG. 49.
A P-channel transistor can also be used as the switch.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

A video signal is input to the first wiring 209 and the second wiring 210. A scanning signal is input to the third wiring 211. The scanning signal is an H-level or L-level digital voltage signal. When the first and second switches and the transistor 203 are N-channel type, the H level of the scanning signal is the potential at which the first to third transistors can be turned on, and the L level of the scanning signal is the first and second. It is a potential that can turn off the switch and the transistor 203. Alternatively, when the first and second switches and the transistor 203 are of the P channel type, the H level of the scanning signal is a potential that can turn off the first and second switches and the transistor 203, and the L level of the scanning signal is the first. 1st and 2nd switches, and transistor 2
It is a potential that can turn on 03. The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Alternatively, the video signal may be an electric current. The current of this video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

That is, FIG. 3 shows the pixel electrodes of the third liquid crystal element 206 of FIG. 1 and the second
It can be said that the transistor 203 connecting to the wiring 210 of the above is added. In the case of FIG. 1, if some noise or leakage current enters a point where the first capacitance element 207 and the second capacitance element 208 are connected, electric charges are accumulated there. As a result, the voltage applied to the liquid crystal element is affected, and the image quality may deteriorate. However, as shown in FIG. 3, by adding the transistor 203, the accumulated charge can be extracted. As a result, image quality defects such as burn-in can be reduced.

As described above, it is desirable that the on-resistance of the transistor 203 is higher than the on-resistance of the first switch 201 or the second switch 202. A high on-resistance of a transistor means that the ratio (W / L) of the channel width W to the channel length L is small.
By increasing the on-resistance of the transistor in this way, the potential at the point where the first capacitance element 207 and the second capacitance element 208 are connected is the leakage current of each capacitance element, each holding capacitance, etc. It will be decided by the balance of. However, the present invention is not limited to this, and the first to third transistors may be formed in the same size, and a resistance element may be connected in series with the third transistor 203.

Therefore, the contents described in FIGS. 1 and 2 and the like can also be applied to FIG. For example, FIG. 4 shows a case where FIG. 2 is applied to FIG.

In addition, in FIG. 3 and FIG. 4, the first switch 201N (or the first switch 251)
N), second switch 202N (or second switch 252N) and transistor 203
(Transistor 253) is controlled by the third wiring 211 (or the third wiring 262), but is not limited thereto. These may be connected to different wires and controlled separately. Alternatively, a part may be connected to another wiring.

Although the transistor 203 is connected to the second wiring 210 in FIG. 3, it may be connected to the first wiring 209. The same applies when the third transistor 203 is connected to the first wiring 209. Similar to FIG. 3, in FIG. 4, the transistor 253 is connected to the second wiring 261 but may be connected to the first wiring 260.

Alternatively, another wiring for connecting the transistor may be provided. The case is shown in FIG. In FIG. 5B, two scanning lines are arranged, and the scanning lines that control the first switch 301N and the second switch 302N and the scanning lines that control the transistor 303 are different wirings, but the wiring is limited to this. Not done. The first switch 301N, the second switch 302N, and the transistor 303 may be connected to the same scanning line. Therefore, the contents described in other figures such as FIG. 1 can also be applied to FIG. For example, the case where FIG. 2 is applied to FIG. 5 is shown in FIG.

In FIG. 5, the transistor 303 is preferably turned on when the first switch 301 or the second switch 302 is turned off, but the present invention is not limited to this. The transistor 303 may be on when the first switch 301 or the second switch 302 is on, or for some period of time when it is on (preferably the first half). ..

It is desirable, but not limited to, that the potential of the fifth wiring 313 is substantially equal to the potential of the common electrode. It is also possible to make the potential substantially equal to the potential of the first wiring 309 or the second wiring 310.

The fifth wiring 313 can be shared with another wiring. For example, capacity line,
It can be shared with scanning lines and the like. The shared wiring may be wiring of another pixel. As a result, the aperture ratio can be improved. The contents described in other figures such as FIG. 1 can also be applied to FIG. That is, at least one of the transistors may be of the P channel type, or the liquid crystal element may be divided into a plurality of parts.

Although the transistor 353 is connected to the third capacitive element 359 in FIG. 6,
Not limited to this. A transistor 353 may be connected between the contact point between the third capacitance element 359 and the third liquid crystal element 356 and the fifth wiring 364. The contents described in other figures such as FIG. 1 can also be applied to FIG.

The first to third liquid crystal elements described above have a transmittance according to the video signal.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

Up to now, the case where two capacitive elements are connected between the signal lines via a switch has been described, but the present invention is not limited to this. It is possible to arrange more capacitive elements. By adding a capacitive element, the voltage applied to the liquid crystal element can be further changed. Then, by applying each of the voltages to each liquid crystal element, many liquid crystal elements having different applied voltages can be arranged. As a result, the viewing angle can be widened.

Therefore, FIG. 9 shows an example in which a capacitance element and a liquid crystal element are further added and arranged with respect to FIG.
Shown in. Alternatively, FIG. 20 shows an example in which a capacitance element and a liquid crystal element are further added and arranged with respect to FIG. Liquid crystal elements may be further added. Then, the first liquid crystal element 503 is a third
It may be connected to the liquid crystal element 505 of the above in the same manner. Similarly, in the circuits shown in other figures, it is possible to add a capacitance element and a liquid crystal element. The contents described in the description of other figures can also be applied to FIGS. 9 and 20.

In FIG. 9, the pixel 500 includes a first switch 501, a second switch 502, a first liquid crystal element 503, a second liquid crystal element 504, a third liquid crystal element 505, and a fourth liquid crystal. Element 506, first capacitive element 507, second capacitive element 508, and third capacitive element 50.
It has 9, a first wiring 510, a second wiring 511, and a third wiring 512.

The first wiring 510 is connected to the first electrode of the first liquid crystal element 503 and the first electrode of the first capacitance element 507 via the first switch 501. The second wiring 511 is a second switch 50 on the first electrode of the second liquid crystal element 504 and the first electrode of the third capacitance element 509.
It is connected via 2. The second electrode of the first capacitive element 507 is the second capacitive element 508.
Is connected to the first electrode of the third liquid crystal element 505 and the first electrode of the third liquid crystal element 505. The second electrode of the second capacitance element 508 is connected to the second electrode of the third capacitance element 509 and the first electrode of the fourth liquid crystal element 506.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to the common electrode.

The first wiring 510 and the second wiring 511 function as signal lines. Therefore, the first
An image signal is usually supplied to the wiring 510 and the second wiring 511. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 512 functions as a scanning line.

The first switch 501 and the second switch 502 are not particularly limited as long as they function as switches. For example, when a transistor is used, its polarity may be P-channel type or N-channel type.

FIG. 9B shows a case where an N-channel transistor is used as the switch. FIG. 9 (B
), The gates of the first switch 501N and the second switch 502N are connected to the third wiring 512. The third wire 512 functions as a scanning line.

Note that, as in FIG. 1, FIG. 9 may have two scanning lines as shown in FIG. 49.
A P-channel transistor can also be used as the switch.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

Further, as shown in FIG. 11 and the like, the liquid crystal element may be divided into a plurality of parts.

The first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 503.
The liquid crystal element 506 of the above has a transmittance corresponding to the video signal.

As described above, it is possible to have four liquid crystal elements per pixel, and it is also possible to further increase the number of liquid crystal elements per pixel. By increasing the number of liquid crystal elements per pixel, various orientation states can be provided, and a liquid crystal display device having a wider viewing angle can be provided.

Note that FIGS. 9 and 20 describe a case where a liquid crystal element is added by adding a capacitance element. However, it is not limited to this. By increasing the number of transistors, signal lines, etc.
The number of liquid crystal elements arranged in one pixel can be increased. Therefore, as an example, FIG. 10 shows a case where a liquid crystal element is additionally arranged by increasing the number of transistors and signal lines with respect to the circuit of FIG. However, the configuration is not limited to this. In FIG. 10, the signal line is added without adding the scanning line, but it is also possible to add the scanning line without adding the signal line. FIG. 21 shows a case where the capacitance element 584 is added without adding the signal line and is arranged between the signal line and the fourth liquid crystal element 557 to divide the potential supplied from the signal line. Shown. In FIG. 22, a capacitance element is added without adding a signal line, a capacitance element 572 is added between the signal line and the first liquid crystal element 554, and between the signal line and the first liquid crystal element 554. By arranging in, the case where the potential supplied from the signal line is divided is shown. With the configuration shown in FIGS. 21 and 22, different voltages can be applied to the four liquid crystal elements without adding a signal line.

Although the fourth liquid crystal element 557 is connected to the first wiring 560 in FIGS. 21 and 22, the fourth liquid crystal element 557 may be connected to the second wiring 561.

As in the case of FIG. 1, liquid crystal elements can be additionally arranged in the circuits shown in other figures. The contents described in the description of other figures can also be applied to FIG. That is, the transistor may be a P-channel type, or the liquid crystal element may be divided into a plurality of parts.

In FIG. 10, the pixel 550 includes the first switch 551 and the second switch 552.
A third switch 555, a first liquid crystal element 554, a second liquid crystal element 555, a third liquid crystal element 556, a fourth liquid crystal element 557, a first capacitance element 558, and a second. Capacitive element 5
59 and.

The first wiring 560 is connected to the first electrode of the first liquid crystal element 554 and the first electrode of the first capacitance element 558 via the first switch 551. The second wiring 561 is connected to the first electrode of the second liquid crystal element 555 and the first electrode of the second capacitance element 559. The third wiring 562 is connected to the first electrode of the fourth liquid crystal element 557 via the third switch 553. The second electrode of the first capacitance element 558 is connected to one of the second electrode of the second capacitance element 559 and the first electrode of the third liquid crystal element 556.

FIG. 10B shows a case where an N-channel transistor is used as the switch. FIG. 10
In (B), the gates of the first switch 551N and the second switch 552N are connected to the fourth wiring 563. The fourth wire 563 functions as a scanning line.

In addition, in FIG. 10, as in FIG. 1, two scanning lines may be provided as shown in FIG. 49.
A P-channel transistor can also be used as the switch.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

Further, as shown in FIG. 11 and the like, the liquid crystal element may be further divided into a plurality of pieces.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to the common electrode.

The first wiring 560, the second wiring 561 and the third wiring 562 function as signal lines. Therefore, the first wiring 560, the second wiring 561 and the third wiring 562 are usually used.
An image signal is supplied. However, it is not limited to this. A constant signal may be supplied regardless of the image. The fourth wire 563 functions as a scanning line.

A capacitive element may be provided between the liquid crystal element and the wiring that functions as a signal line. Figure 2
By providing the capacitance element 566 as shown in 1, the voltage applied to the liquid crystal element can be made different. Therefore, the first wiring 560 and the third wiring 562 in FIG. 10 can be combined into one.

The position where the capacitance element is additionally arranged is not limited to the position between the fourth liquid crystal element and the signal line, and as shown in FIG. 22, the capacitance element is located between the other liquid crystal element and the signal line. (For example, a capacitance element 565) may be provided. Also in this case, a plurality of signal lines can be combined into one.

As described above, it is possible to have four liquid crystal elements per pixel, and it is also possible to further increase the number of liquid crystal elements per pixel. By increasing the number of liquid crystal elements per pixel, various orientation states can be provided, and a liquid crystal display device having a wider viewing angle can be provided.

FIG. 32 shows an example of a top view of the pixels of the liquid crystal display device to which the present invention is applied. Further, FIG. 33 shows a circuit diagram of FIG. 32. In addition, in FIG. 32 and FIG. 33, the same reference numerals are used for the corresponding portions.

The pixel 1000 shown in FIG. 32 is a first conductive layer (a first conductive layer) constituting wirings serving as scanning lines and capacitance lines.
It is shown by the hatch pattern of the third wiring 1013. ) Is provided with a first insulating film (not shown), a semiconductor film is provided on the first insulating film, and a second conductive layer (first wiring 1) is provided on the semiconductor film.
It is shown by the hatch pattern of 011. ) Is provided, a second insulating film (not shown) is provided on the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1003) is provided on the second insulating film. ) Is provided.

In FIG. 33, the pixels 1000 are the first switch 1001 and the second switch 100.
2, the first liquid crystal element 1003, the second liquid crystal element 1004, and the third liquid crystal element 1005.
The fourth liquid crystal element 1006, the first capacitance element 1007, the second capacitance element 1008, the third capacitance element 1009, the fourth capacitance element 1010, and the fifth capacitance element 1016.
It has a sixth capacitive element 1017.

The first wiring 1011 is connected to the first electrode of the fourth liquid crystal element 1006, the first capacitance element 1007, and the first electrode of the second capacitance element 1008 via the first transistor 1001. .. The second wiring 1012 includes a first liquid crystal element 1003 and a fourth capacitance element 1010.
Is connected to the first electrode of the third capacitive element 1009 and the first electrode of the third capacitive element 1009 via the second transistor 1002. The second electrode of the second capacitive element 1008 is a third capacitive element 100.
The second electrode of 9, the first electrode of the fifth capacitance element 1016, and the first electrode of the second liquid crystal element 1004.
Is connected to the first electrode of the sixth capacitive element 1017 and the first electrode of the third liquid crystal element 1005. The second electrode of the first capacitance element 1007 and the second electrode of the sixth capacitance element 1017 are connected to the fifth wiring 1015. The second electrode of the fifth capacitance element 1016 and the second electrode of the fourth capacitance element 1010 are connected to the fourth wiring 1014.

In addition, FIG. 33 shows that each of all the liquid crystal elements of FIG. 11B is provided with a holding capacity. That is, it can be said that it is a combination of FIGS. 11 and 16. Therefore, in FIG. 33, the same configuration as in FIG. 1 can be applied. That is, the wiring that functions as a capacitance line may be shared with the common electrode as shown in FIG. 50, the switch can be replaced with a transistor, and the N channel type may be used for the transistor, or P. The channel type may be used.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first wiring 1011 and the second wiring 1012 function as signal lines. Therefore, the first
An image signal is usually supplied to the wiring 1011 and the second wiring 1012. However, it is not limited to this. A constant signal may be supplied regardless of the image. Third wiring 10
Reference numeral 13 functions as a scanning line. The fourth wiring 1014 and the fifth wiring 1015 function as capacitance lines.

By providing pixels as shown in the top view shown in FIG. 32, each liquid crystal element can be given various orientation states, and a liquid crystal display device having a wider viewing angle can be provided.

In the present embodiment, only the case where all the transistors provided in one pixel have the same conductive type has been described, but the present invention is not limited to this. That is, the transistors provided in one pixel may have different conductive types.

Furthermore, the type of transistor in this embodiment is not particularly limited, and various transistors can be used. Therefore, a thin film transistor (TFT) using a crystalline semiconductor film, a thin film transistor using a non-single crystal semiconductor film typified by amorphous silicon or polycrystalline silicon, a transistor formed by using a semiconductor substrate or an SOI substrate, and a MOS Type transistors, junction type transistors, bipolar transistors, transistors using compound semiconductors such as ZnO and a-InGaZnO, transistors using organic semiconductors and carbon nanotubes,
Other transistors can be applied. However, it is desirable to use a transistor with a small off current. Examples of the transistor having a small off-current include a thin film transistor provided with an LDD region, a thin film transistor having a multi-gate structure, and the like. Also,
Both N-channel type and P-channel type may be used to make a CMOS type switch.

In addition, although it has been described using various figures in the present embodiment, a part or all of the contents described in each figure is applied to a part or all of the contents described in another figure. And combine
Alternatively, it can be replaced freely. Furthermore, in the figures described so far, more configurations can be considered by combining different parts with respect to each part.
The description of this embodiment does not prevent this.

Similarly, some or all of the content described in each figure of this embodiment may be applied, combined, or replaced with respect to some or all of the content described in another embodiment. Etc. can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part, and the description of the present embodiment does not prevent this. ..

In addition, in this embodiment, when a part or all of the contents described in the other embodiments are embodied, slightly modified, partially changed, or improved. It shows an example of the case where it is described in detail, when it is applied, and when it is related. Therefore, the contents described in the other embodiments can be freely applied to the present embodiment and can be freely combined or replaced.

(Embodiment 2)
In the first embodiment, a new voltage is created by dividing the voltage using a capacitive element and supplied to the liquid crystal element. However, the element for creating a new voltage is not limited to the capacitive element.
Elements that divide voltage, elements that convert current into voltage, non-linear elements, elements that have resistance components,
Various elements such as elements having a capacitive component, inductors, diodes, transistors, resistance elements, and switches can be used. Also. A desired circuit can be realized by connecting and combining these in series or in parallel. Such an element will be referred to as a voltage dividing element.

FIG. 23 shows a generalized case where the capacitance element of FIG. 1 is a pressure dividing element. Therefore, the content described in the first embodiment can be applied to FIG. 23.

FIG. 23A shows an example of the configuration of the pixel circuit included in the liquid crystal display device of the present invention. The pixel 600 includes a first switch 601, a second switch 602, and a first liquid crystal element 6.
03, the second liquid crystal element 604, the third liquid crystal element 605, the first pressure dividing element 606,
It has a second pressure dividing element 607.

The first wiring 608 is connected to one end of the first electrode of the first liquid crystal element 603 and the first pressure dividing element 606 via the first switch 601. The second wiring 609 is connected to one end of the first electrode of the second liquid crystal element 604 and the second pressure dividing element 607 via a second switch. The first pressure dividing element 606 and the second pressure dividing element 607 are connected in series, and the first electrode of the third liquid crystal element 605 is between the first pressure dividing element 606 and the second pressure dividing element 607. It is connected to the.

The second electrodes of the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 are connected to the common electrode.

FIG. 23B shows a case where an N-channel transistor is used as the switch. FIG. 23
In (B), the gates of the first switch 601N and the second switch 602N are connected to the third wiring 610. The third wire 760 functions as a scanning line.

In FIG. 26, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first wiring 608 and the second wiring 609 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 608 and the second wiring 609. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 610 functions as a scanning line.

The first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 have a transmittance corresponding to the video signal.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

As the first pressure dividing element 606 and the second pressure dividing element 607, not only a capacitive element but also various elements can be used. For example, an element that divides a voltage, an element that converts a current into a voltage, a non-linear element, an element having a resistance component, an element having a capacitance component, an inductor, a diode, a transistor, a resistance element, a switch, or the like can be used as a voltage dividing element. it can. FIG. 30 illustrates an example of a pressure dividing element.

First, as shown in FIGS. 30 (J) and 30 (K), an N-channel transistor and a P-channel transistor can be used.

FIG. 30A is a diode-connected N-channel transistor. FIG. 30 (B
) Is the one in which the connecting direction of FIG. 30 (A) is reversed. FIG. 30 (C) shows FIG. 30 (
A) and the element shown in FIG. 30 (B) are connected in parallel. 30 (D) and 30 (E) are the N-channel transistors of FIGS. 30 (A) and 30 (B) replaced with P-channel transistors. P-channel transistors may be connected in parallel as in FIG. 30 (C). Alternatively, as shown in FIG. 30 (F), a P-channel transistor and an N-channel transistor may be connected in parallel.

30 (G) and 30 (L) are voltage dividing elements in which a resistance element and a capacitance element are connected in series or in parallel.

In FIGS. 30H and 30I, the resistance element and the P-channel transistor or the N-channel transistor are connected in series.

The wiring to which the gates of the transistors shown in FIGS. 30 (H), (I), (J) and (K) are connected is not particularly limited. It may be connected to a scanning line, a capacitance line or a signal line. Also,
It may be connected to a scanning line or the like in a row adjacent to the pixel. By controlling the potential of the gate, the resistance value of the voltage dividing element can be controlled.

FIGS. 30 (M) and 30 (N) show diodes. There are various types of diodes, but the diodes that can be used as the voltage dividing element are not particularly limited. For example, PN type, PI
N-type, Schottky type, MIM type, MIS type and other diodes can be used. Further, as shown in FIG. 30 (O), two diodes may be connected in parallel in opposite directions.

Further, the inductor element shown in FIG. 30 (P) may be used, or the resistance element may be used as shown in FIG. 30 (Q). As the resistance element, as shown in FIG. 30 (R), an element having a variable resistance value may be used.

Therefore, in the configuration described in the first embodiment, the capacitive element can be replaced with the pressure dividing element shown in FIG. 30 to form a new circuit. Therefore, the contents described in the first embodiment can be applied to FIG. 23 and a circuit configured by replacing the capacitance element with the voltage dividing element.

36 to 48 show a circuit diagram in which the pressure dividing element 606 and the pressure dividing element 607 shown in FIG. 23 are replaced with various elements shown in FIG. 30. Therefore, in FIGS. 36 to 48, the same configuration as in FIG. 1 can be applied. That is, as shown in FIG. 7, the first electrode of a part or all of the liquid crystal elements may be connected to the capacitance line. The capacitance line may be shared with the common electrode as shown in FIG. The switch can be replaced with a transistor, and an N-channel type or a P-channel type may be used for the transistor. When a transistor is used, the gate of each transistor may be connected to the same scanning line or may be connected to different scanning lines. Further, as shown in FIG. 11, the liquid crystal element may be divided into a plurality of parts. A plurality of signal lines may be provided, or may be combined into one as shown in FIG. Furthermore, FIGS. 2 and 1
As shown in 2 and the like, the pressure dividing element may be appropriately arranged at an appropriate position.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The resistance value of the voltage dividing element does not have to be constant, and the resistance value may be set so as to differ depending on the time or pixels. In order to change the resistance value, it is preferable that the voltage dividing element has a transistor. When a transistor is used, the potential of the gate may be changed with time or with pixels in the transistor.

When the voltage dividing element is connected between the liquid crystal elements, electric charge may leak between the liquid crystal elements when the connection between the signal line and the liquid crystal element is turned off. In order to prevent charge leakage, the voltage dividing element and the switch may be connected in series and connected between the liquid crystal elements. An example in that case is shown in FIG. The connection between the voltage dividing element and the switch may be reversed.

A pressure dividing element and a switch are arranged between the liquid crystal elements, but the present invention is not limited to this. A plurality may be arranged. The contents described in the first embodiment and 23 can also be applied to 24.

The pixel 650 includes a first switch 651, a second switch 652, and a first liquid crystal element 6.
53, the second liquid crystal element 654, the third liquid crystal element 655, the first pressure dividing element 656,
It has a second pressure dividing element 657, a third switch 658, and a fourth switch 659.

The first wiring 660 is connected to one end of the first electrode of the first liquid crystal element 653 and the third switch 658 via the first switch 651. The second wiring 661 is connected to the first electrode of the second liquid crystal element 654 and one end of the fourth switch 659. The third switch 658 and the fourth switch 659 are connected in series, and the first voltage dividing element 656 and the second voltage dividing element connected in series between the third switch 658 and the fourth switch 659. The element 657 is provided, and the first electrode of the third liquid crystal element 655 is a first pressure dividing element 656 and a second pressure dividing element 6.
It is connected between 57.

The second electrodes of the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 are connected to the common electrode.

The first wiring 660 and the second wiring 661 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 660 and the second wiring 661. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 662 functions as a scanning line.

The first switch 651 and the second switch 652 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, when a transistor is used as the first switch 651 and the second switch 652, the polarity may be P-channel type or N-channel type.

The third switch 658 and the fourth switch 659 are not particularly limited as long as they function as switches. For example, a transistor can be used. Third switch 65
The polarity of the transistor used for the 8th and 4th switches 659 may be P channel type or N.
It may be a channel type.

FIG. 24B shows a case where an N-channel transistor is used as the switch. FIG. 24
In (B), the gates of the first switch 651N and the second switch 652N are connected to the third wiring 662. The third wire 662 functions as a scanning line.

In FIG. 24, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 have transmittances according to the video signal.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

Next, FIGS. 23 and 24 show specific examples when the pressure dividing element of FIG. 30 is applied. First, the case of using FIG. 30 (J) will be described with reference to FIG. 25. The gate is connected to the scan line. 23 and 24 correspond to the first capacitive element 106 and the second capacitive element 107 in FIG. 1 replaced with transistors. Therefore, Embodiment 1, FIG.
The contents described in 3 and 24 can also be applied to 25.

The pixel 700 includes a first switch 701, a second switch 702, and a first liquid crystal element 7.
03, the second liquid crystal element 704, the third liquid crystal element 705, and the first transistor 706.
And a second transistor 707.

The first wiring 708 is the first electrode of the first liquid crystal element 703 and the first transistor 706.
Is connected to one of the source or drain of the above via a first switch 701. The second wiring 709 is connected to one of the source or drain of the first electrode of the second liquid crystal element 704 and the second transistor 707 via the second switch 702. The other of the source or drain of the first transistor 706 and the other of the source or drain of the second transistor 707 are connected to the first electrode of the third liquid crystal element 705. The first and second transistors are connected to the third wire 710.

The second electrodes of the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 are connected to the common electrode.

The first wiring 708 and the second wiring 709 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 708 and the second wiring 709. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 710 functions as a scanning line.

The first switch 701 and the second switch 702 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, a case where a transistor is used as the first switch 701 and the second switch 702 will be described. When a transistor is used, its polarity may be P-channel type or N-channel type.

FIG. 25B shows a case where an N-channel transistor is used as the switch. FIG. 25
In (B), the gates of the first switch 701N and the second switch 702N are connected to the third wiring 710. The third wire 710 functions as a scanning line.

In FIG. 25, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The first transistor 706 and the second transistor 707 may function as a voltage dividing element, and the polarities of the first transistor 706 and the second transistor 707 may be P-channel type or N-channel type.

Next, the operation of the pixel 700 will be described. First, selected by the third wiring 710,
The first switch 701 and the second switch 702 are turned on. Then, the first wiring 7
Video signals are supplied from 08 and the second wiring 709. At the same time as the first and second switches, the first transistor 706 and the second transistor 707 are also turned on. Therefore, the first wiring 708 and the second wiring 709 are connected via the transistor. And since the transistor has a resistance component (on resistance), the voltage is divided by each transistor. At this time, if the on-resistance of the first transistor 706 and the second transistor 707 is high, most of the voltage is applied to those transistors.

Therefore, a potential substantially equal to the potential of the first wiring 708 is applied to the pixel electrodes of the first liquid crystal element 703. More precisely, from the potential of the first wiring 708, the first switch 701
The potential corresponding to the voltage drop is applied to the pixel electrode of the first liquid crystal element 703. Similarly, a potential substantially equal to the potential of the second wiring 709 is applied to the pixel electrodes of the second liquid crystal element 704. More precisely, from the potential of the second wiring 709, the potential corresponding to the voltage drop by the second switch 702 is applied to the pixel electrode of the second liquid crystal element 704.

Then, the potential of the pixel electrode of the first liquid crystal element 703 and the potential of the pixel electrode of the second liquid crystal element 704 are divided by the first transistor 706 and the second transistor 707, and the third liquid crystal is divided. It is supplied to the pixel electrode of the element 705. Temporarily, the first transistor 706
And when the on-resistance of the second transistor 707 is approximately the same, the third liquid crystal element 70
The potentials of the pixel electrodes 5 are the potentials of the pixel electrodes of the first liquid crystal element 703 and the potentials of the second liquid crystal element 70.
It is in the middle of the potential of the pixel electrode of 4.

If the on-resistance of the first switch 701, the second switch 702, the first transistor 706, the second transistor 707, or the like is small, a large current will flow.
Therefore, it is desirable that the first transistor 706 and the second transistor 707, which are transistors for dividing the voltage, have high on-resistance. For example, the first transistor 70
First switch 701 or second switch 70 rather than 6 or second transistor 707
It is desirable that the ratio (W / L) of the channel width W and the channel length L is smaller in 2. For example, the first transistor 706 or the second transistor 707 may have a multi-gate structure to increase the channel length L.

It is desirable that the first transistor 706 and the second transistor 707 have substantially the same on-resistance. Due to the approximately equal on-resistance, the divided voltages have an intermediate potential. If there is a difference in the on-resistance, it will be biased to either potential, and evenly,
This is because the liquid crystal element cannot be controlled. For example, it is desirable that the ratio (W / L) of the channel width W and the channel length L of the first transistor 706 and the second transistor 707 is approximately equal. However, it is not limited to this.

When the third wiring 710 is in the non-selected state, the first switch 701 and the second switch 70
2. The first transistor 706 and the second transistor 707 are turned off. Then
The voltage supplied to each liquid crystal element is maintained. By operating in this way, the voltage applied to each liquid crystal element can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. The timing of turning each transistor on and off, the potential of the signal line, and the like can be controlled by various methods.

Since the first transistor 706 and the second transistor 707 are also turned off, no electric charge leaks between the liquid crystal elements. Therefore, it can be said that the first transistor 706 and the second transistor 707 are realized by one element for the voltage dividing element and the switch in FIG. 24.

The first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 have a transmittance corresponding to the video signal.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

The first transistor 706 and the second transistor 707 are not limited to the illustrated configuration. For example, one or both of the first transistor 706 and the second transistor 707 may have a multi-gate structure. The multi-gate structure makes it easier to adjust the resistance values of the first transistor 706 and the second transistor 707 than in the case of the single gate structure. Further, the on-resistance of the first transistor 706 and the second transistor 707 can be increased as compared with the case of the single gate structure.

The resistance values of the first transistor 706 and the second transistor 707 do not have to be constant, and the resistance values may be set so as to differ depending on the time or pixels. To change the resistance value, the first transistor 706 and the second transistor 70 functioning as a voltage dividing element
In 7, the potential of the gate may be changed depending on the time or the pixel.

Although the holding capacity is not specified in FIGS. 23 to 25, as described in FIG. 1 and the like, as described in FIG.
The holding capacity may be arranged. As an example, in FIG. 25, the case where the holding capacitance is arranged in each liquid crystal element is shown in FIG.

In FIG. 26, the pixels 750 are the first switch 751 and the second switch 752.
The first liquid crystal element 753, the second liquid crystal element 754, the third liquid crystal element 755, the first transistor 756, the second transistor 757, the first capacitance element 762, and the second capacitance. It has an element 763 and a third capacitive element 764.

The first wiring 758 is a first switch 75 on the first electrode of the first liquid crystal element 753, one of the source or drain of the first transistor 756, and the first electrode of the third capacitive element 764.
It is connected via 1. The second wire 759 is connected to the first electrode of the second liquid crystal element 754, one of the source or drain of the second transistor 757, and the first electrode of the first capacitive element 762. The other of the source or drain of the first transistor 756 and the second
The other of the source or drain of the transistor 757 is connected to the first electrode of the third liquid crystal element 755 and the first electrode of the second capacitive element 763. The first and second switches and the first and second transistors are connected to the third wiring 760. First capacitive element 76
2. The second electrode of the second capacitance element 763 and the third capacitance element 764 is connected to the fourth wiring 761.

The second electrodes of the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 are connected to the common electrode.

The first wiring 758 and the second wiring 759 function as signal lines. Third wiring 760
Functions as a scanning line. The fourth wiring 761 functions as a capacitance line.

The first switch 751 and the second switch 752 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 751
When a transistor is used as the second switch 752, its polarity may be P-channel type or N-channel type.

FIG. 26B shows a case where an N-channel transistor is used as the switch. FIG. 26
In (B), the gates of the first switch 751N and the second switch 752N are connected to the third wiring 760. The third wire 760 functions as a scanning line.

In FIG. 26, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first transistor 756 and the second transistor 757 may function as a voltage dividing element, and the polarities of the first transistor 756 and the second transistor 757 may be P-channel type or N-channel type.

The first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 have transmittances according to the video signal.

The resistance values of the first transistor 756 and the second transistor 757 do not have to be constant, and the resistance values may be set so as to differ depending on the time or pixels. To change the resistance value, the gate potential of the first transistor 756 and the second transistor 757, which function as resistors, may be changed with time or with pixels.

As described above, each liquid crystal element can have a different orientation state, and the viewing angle can be widened.

In FIGS. 25 and 26, the gates of the first and second transistors are connected to the scanning line, but the present invention is not limited to this. Another wire may be placed and connected to that wire. Alternatively, a plurality of different wires may be arranged to connect the gates of the first transistor and the second transistor to different wires. 27 (B) shows the case where the gates of the first transistor and the second transistor are connected to the fourth wiring in FIG. 27 (A). By doing so, the potentials of the gates of the first transistor and the second transistor can be controlled independently of the first and second switches, and the on-resistance of the first and second transistors can be controlled. Can be easily controlled. For example, when a video signal of the negative electrode (the video signal is lower than the potential of the common electrode) is input, the gate-source voltage of the first and second transistors becomes very large. Therefore, the on-resistance of the first transistor and the second transistor is lowered, and a large amount of current flows, so that the power consumption may increase. Therefore, when the first and second transistors are turned on to divide the voltage, the video signal of the negative electrode is input as compared with the case of inputting the video signal of the positive electrode (the video signal is higher than the potential of the common electrode). The gate potential of the first and second transistors should be lower when inputting. As a result, it is possible to prevent a large amount of current from flowing.

The pixel 800 includes a first switch 801 and a second switch 802, a first transistor 803, a second transistor 804, a first liquid crystal element 805, and a second liquid crystal element 8.
It has 06 and a third liquid crystal element 807.

The first wiring 808 is a first electrode of the first liquid crystal element 805 and a first transistor 80.
It is connected to one of the source or drain of 3 via the first switch 801. The second wiring 809 is connected to the second switch 802 at one of the source or drain of the first electrode of the second liquid crystal element 806 and the second transistor 804. First transistor 80
The other of the source or drain of 3 and the other of the source or drain of the second transistor 804 are connected to the first electrode of the third liquid crystal element 807. 1st switch 801 and 2nd
The gate of the switch 802 is connected to the third wire 810. First transistor 8
The gates of 03 and the second transistor 804 are connected to the fourth wiring 811.

The second electrodes of the first liquid crystal element 805, the second liquid crystal element 806, and the third liquid crystal element 807 are connected to the common electrode.

The first wiring 808 and the second wiring 809 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 808 and the second wiring 809. However, it is not limited to this. Regardless of the image. A constant signal may be supplied. The third wire 810 and the fourth wire 811 function as scanning lines.

The first switch 801 and the second switch 802 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 801
When a transistor is used as the second switch 802, its polarity may be P-channel type or N-channel type.

FIG. 27B shows a case where an N-channel transistor is used as the switch. FIG. 27
In (B), the gates of the first switch 801N and the second switch 802N are connected to the third wiring 810. The third wire 760 functions as a scanning line.

In FIG. 27, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first transistor 803 and the second transistor 804 may function as a voltage dividing element, and the polarities of the first transistor 803 and the second transistor 804 may be P-channel type or N-channel type.

When the first transistor 803 and the second transistor 804 are turned on to function as a pressure dividing element, the first transistor 803 and the second transistor 8 are used.
It is desirable to operate 04 in a linear region. This is because the on-resistance of the first transistor 803 and the second transistor 804 is set to an appropriate value.

It is desirable that the timing at which the first switch 801 and the second switch 802 are turned on / off and the timing at which the first transistor 803 and the second transistor 804 are turned on / off are substantially the same. However, it is not limited to this. First switch 80
When the 1st and 2nd switches 802 are turned on, after a short delay, the 1st transistor 80
The third and second transistors 804 may be turned on. Thereby, the period in which the first wiring 808 and the second wiring 809 are connected can be shortened. Therefore, it is possible to easily input electric charges to the first liquid crystal element 805 and the second liquid crystal element 806.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

Next, an example in which the content described in the first embodiment is applied to FIG. 25 is shown. An example of a circuit configured by replacing the capacitive element with the pressure dividing element shown in FIG. 30 is shown. FIG. 28 shows a case where the first capacitive element and the second capacitive element of FIG. 2 are replaced with FIG. 30 (J). At this time, it is assumed that the gate of the transistor of the voltage dividing element is connected to the scanning line. However, it is not limited to this. Therefore, the content described in the first embodiment can be applied to FIG. 28.

The pixel 850 includes a first switch 851, a second switch 852, and a first liquid crystal element 8.
53, the second liquid crystal element 854, the third liquid crystal element 855, and the first transistor 856.
And a second transistor 857 and a capacitive element 861.

The first wiring 858 is a first electrode of the first liquid crystal element 853 and a first transistor 85.
It is connected to one of the source or drain of No. 6 via a first switch 851. The second wire 859 is connected to one of the source or drain of the first electrode of the second liquid crystal element 854 and the second transistor 857. The other of the source or drain of the first transistor 856 and the other of the source or drain of the second transistor 857 are connected to the first electrode of the capacitive element 861, and the second electrode of the capacitive element 861 is the third liquid crystal. It is connected to the first electrode of element 855. The first and second transistors are connected to the third wire 860.

The second electrodes of the first liquid crystal element 853, the second liquid crystal element 854, and the third liquid crystal element 855 are connected to the common electrode.

The first wiring 858 and the second wiring 859 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 858 and the second wiring 859. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 860 functions as a scanning line.

The first switch 851 and the second switch 852 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 85
When a transistor is used as the first and second switches 852, the polarity may be P-channel type or N-channel type.

FIG. 28B shows a case where an N-channel transistor is used as the switch. FIG. 28
In (B), the gates of the first switch 851N and the second switch 852N are connected to the third wiring 760. The third wire 860 functions as a scanning line.

In FIG. 28, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first transistor 856 and the second transistor 857 may function as a voltage dividing element, and the polarities of the first transistor 856 and the second transistor 857 may be P-channel type or N-channel type.

By adopting the circuit configuration shown in FIG. 28, the potential of the first electrode of the third liquid crystal element 855 can be lowered by the amount of the capacitance element 861 as in FIG.

The first transistor 856 and the second transistor 857 are not limited to the illustrated configuration. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure.

The resistance values of the first transistor 856 and the second transistor 857 do not have to be constant, and the resistance values may be set so as to differ depending on the time or pixels. To change the resistance value, the gate potential of the first transistor 856 and the second transistor 857, which function as resistors, may be changed with time or with pixels.

The first transistor 856 and the second transistor 857 are not limited to the illustrated configuration. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure. By adopting the multi-gate structure, the on-resistance of the first transistor 856 and the second transistor 857 can be increased as compared with the case of the single gate structure.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

Although the case where two pressure dividing elements are used has been described in FIGS. 23 to 28, the present invention is not limited to this. It is possible to further improve the viewing angle characteristics by using more pressure dividing elements. As an example, when a pressure dividing element is added to FIG. 25, or with respect to FIG.
FIG. 29 shows an example of a circuit in which two voltage dividing elements shown in FIG. 30 (J) are connected in series and a capacitance element is replaced.

In FIG. 29, the pixels 900 are the first switch 901, the second switch 902, the first liquid crystal element 903, the second liquid crystal element 904, the third liquid crystal element 905, and the fourth liquid crystal element. It has a 906, a first transistor 907, a second transistor 908, and a third transistor 909.

The first wiring 910 is the first electrode of the first liquid crystal element 903 and the first transistor 907.
Is connected to one of the source or drain of the above via a first switch 901. The second wiring 911 is connected to one of the source or drain of the first electrode of the second liquid crystal element 904 and the third transistor 909 via the second switch 902. The other of the source or drain of the first transistor 907 is connected to the first electrode of the third liquid crystal element 905 and the other of the source or drain of the second transistor 908. Third transistor 90
The other of the source or drain of 9 is connected to one of the source or drain of the second transistor 908 and the first electrode of the fourth liquid crystal element 906. 1st switch 901, 2nd
The gates of the switch 902, the first and second transistors of the switch 902 are connected to the third wiring 912.

The second electrodes of the first liquid crystal element 903, the second liquid crystal element 904, the third liquid crystal element 905, and the fourth liquid crystal element 906 are connected to a common electrode.

The first wiring 910 and the second wiring 911 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 910 and the second wiring 911. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 912 functions as a scanning line.

The first switch 901 and the second switch 902 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 901
When a transistor is used as the second switch 902, its polarity may be P-channel type or N-channel type.

FIG. 28B shows a case where an N-channel transistor is used as the switch. FIG. 28
In (B), the gates of the first switch 901N and the second switch 902N are connected to the third wiring 912. The third wire 912 functions as a scanning line.

In FIG. 26, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG. 49, a P-channel transistor may be used as the switch, and further, FIG. 11
The liquid crystal element may be further divided into a plurality of elements as shown in the above.

The switch is not limited to the transistor. Various elements such as diodes can be used as the switch.

The first to third transistors may function as a voltage dividing element, and the polarities of the first to third transistors may be P-channel type or N-channel type. In FIG. 28, an N-channel transistor is used.

As shown in FIG. 29, in FIG. 25, only one of the first and second transistors may have a multi-gate structure.

The gates of the first to third transistors are connected to the third wiring that controls the first and second switches, but the present invention is not limited to this, and will be described with reference to FIG. 27. As described above, the gates of the first to third transistors may be connected to a wiring different from the third wiring that controls the first and second switches.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

The resistance values of the first transistor 907, the second transistor 908, and the third transistor 909 do not have to be constant, and the resistance values may be set so as to differ depending on the time or pixels. In order to change the resistance value, the potential of the gate may be changed with time or with pixels in the third to fifth transistors functioning as resistors. The first transistor 856 and the second transistor 857 are not limited to the illustrated configuration.

As described above, the viewing angle can be widened by giving each liquid crystal element a different orientation state.

FIG. 34 shows an example of a top view of the pixels of the liquid crystal display device to which the present invention is applied. Further, FIG. 35 shows a circuit diagram of FIG. 34. In addition, in FIG. 34 and FIG. 35, the same reference numerals are used for the corresponding portions.

The pixel 1020 shown in FIG. 34 is a first conductive layer (1st conductive layer) constituting wirings to be scanning lines and capacitance lines.
It is shown by the hatch pattern of the third wiring 1033. ) Is provided with a first insulating film (not shown), a semiconductor film is provided on the first insulating film, and a second conductive layer (first wiring 1) is provided on the semiconductor film.
It is shown by the hatch pattern of 031. ) Is provided, a second insulating film (not shown) is provided on the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1023) is provided on the second insulating film. ) Is provided.

In FIG. 35, pixel 1020 is a first switch, the first transistor 1021.
The second transistor 1022, which is the second switch, and the first liquid crystal element 1023,
A second liquid crystal element 1024, a third liquid crystal element 1025, a fourth liquid crystal element 1026, a first capacitance element 1027, a second capacitance element 1030, a third capacitance element 1036, and a fourth
It has a capacitance element 1036, a third transistor 1028, a fourth transistor 1029, and a fifth transistor 1039.

The first wiring 1031 is connected to the second wiring 1032 via the first to fifth transistors connected in series. Between each of the first to fifth transistors is the first to fourth
The first electrode of the liquid crystal element of is connected. The first to fourth liquid crystal elements are connected to the first electrode of the capacitive element in which the second electrode is connected to the fourth wiring 1034 or the fifth wiring 1035. The gates of the first to fifth transistors are connected to the third wiring 1033.

In FIG. 35, all the capacitive elements functioning as the pressure dividing elements in FIG. 9B are replaced with transistors, and each of all the capacitive elements is provided with a holding capacitance. That is, FIG.
It can be said that this is a combination of FIG. Therefore, in FIG. 35, the same configuration as in FIG. 1 can be applied. That is, the wiring that functions as a capacitance line may be shared with the common electrode as shown in FIG. 50, the switch can be replaced with a transistor, and the N channel type may be used for the transistor, or P. The channel type may be used.

The first wiring 1031 and the second wiring 1032 function as signal lines. Therefore, the first
An image signal is usually supplied to the wiring 1031 and the second wiring 1032. However, it is not limited to this. A constant signal may be supplied regardless of the image. Third wiring 10
33 functions as a scanning line. The fourth wiring 1034 and the fifth wiring 1035 function as capacitance lines.

By providing pixels as shown in the top view shown in FIG. 32, each liquid crystal element can be given various orientation states, and a liquid crystal display device having a wider viewing angle can be provided.

In addition, although it has been described using various figures in the present embodiment, a part or all of the contents described in each figure is applied to a part or all of the contents described in another figure. And combine
Alternatively, it can be replaced freely. Furthermore, in the figures described so far, more configurations can be considered by combining different parts with respect to each part.
The description of this embodiment does not prevent this.

Similarly, some or all of the content described in each figure of this embodiment may be applied, combined, or replaced with respect to some or all of the content described in another embodiment. Etc. can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part, and the description of the present embodiment does not prevent this. ..

In addition, in this embodiment, when a part or all of the contents described in the other embodiments are embodied, slightly modified, partially changed, or improved. It shows an example of the case where it is described in detail, when it is applied, and when it is related. Therefore, the contents described in the other embodiments can be freely applied to the present embodiment and can be freely combined or replaced.

(Embodiment 3)
In this embodiment, the structure and manufacturing method of the transistor will be described.

51 (A) to 51 (G) are diagrams showing an example of a transistor structure and a manufacturing method. Figure 5
1 (A) is a figure which shows an example of the structure of a transistor. 51 (B) to 51 (G) are diagrams showing an example of a method for manufacturing a transistor.

The structure and manufacturing method of the transistor are not limited to those shown in FIGS. 51 (A) to 51 (G), and various structures and manufacturing methods can be used.

First, an example of the structure of the transistor will be described with reference to FIG. 51 (A). FIG. 51 (A)
Is a cross-sectional view of a transistor having a plurality of different structures. Here, in FIG. 51 (A), a plurality of transistors having different structures are shown side by side, but this is an expression for explaining the structure of the transistor, and the transistor is actually shown in FIG. 51 (A). It does not have to be juxtaposed as in A), and can be made separately as needed.

Next, the characteristics of each layer constituting the transistor will be described.

As the substrate 110111, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate containing stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET) and polyethylene naphthalate (PE)
It is also possible to use a substrate made of a flexible synthetic resin such as plastic or acrylic typified by N) and Polyestersulfon (PES). By using a flexible substrate, it becomes possible to manufacture a semiconductor device that can be bent. As long as it is a flexible substrate, there are no major restrictions on the area of the substrate and the shape of the substrate. Therefore, the substrate 110
As the 111, for example, if one side is one meter or more and a rectangular shape is used, the productivity can be remarkably improved. Such an advantage is a great advantage as compared with the case of using a circular silicon substrate.

The insulating film 110112 functions as a base film. It is provided from the substrate 110111 in order to prevent an alkali metal such as Na or an alkaline earth metal from adversely affecting the characteristics of the semiconductor element. The insulating film 110112 includes an insulating film having oxygen or nitrogen such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxide (SiOxNy) (x> y), silicon nitride (SiNxOy) (x> y). It can be provided in a single-layer structure or a laminated structure thereof.
For example, when the insulating film 110112 is provided in a two-layer structure, it is preferable to provide a silicon nitride film as the first insulating film and a silicon oxide film as the second insulating film. As another example, when the insulating film 110112 is provided in a three-layer structure, a silicon oxide film is provided as the first insulating film.
A silicon nitride film may be provided as the second insulating film, and a silicon oxide film may be provided as the third insulating film.

The semiconductor layers 110113, 110114, 110115 can be formed of an amorphous semiconductor or a semi-amorphous semiconductor (SAS). Alternatively, a polycrystalline semiconductor layer may be used. SAS is a semiconductor that has an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and has a third state that is stable in terms of free energy, and has short-range order. It contains crystalline regions with lattice strain. At least some areas in the membrane
A crystal region of 0.5 to 20 nm can be observed, and when silicon is the main component, the Raman spectrum is shifted to the lower wavenumber side than ^{520 cm-1.} In X-ray diffraction, diffraction peaks (111) and (220), which are said to be derived from the silicon crystal lattice, are observed. Hydrogen or halogen is included at least 1 atomic% or more as compensation for unbonded hands (dangling bonds). SAS is formed by glow discharge decomposition (plasma CVD) of a material gas. Material gases include SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , and SiHC.
l _3, SiCl _4, SiF ₄ can be used, for example. Alternatively, GeF ₄ may be mixed. The material gas H2, or, _{H 2} and He, Ar, Kr, may be diluted with selected one or more kinds of rare gas elements and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or lower. As the impurity element in the film, impurity is 1 × ¹⁰ 20 cm of atmospheric constituents, such as carbon ^- desirably set to lower than or equal to 1, in particular, oxygen concentration is 5 × ¹⁰ 19 / cm ³ or less, preferably 1 × 10 ¹⁹ / c
It shall be m ^{3 or less.} Here, an amorphous semiconductor layer is formed from a material containing silicon (Si) as a main component (for example, SixGe1-x) by using known means (sputtering method, LPCVD method, plasma CVD method, etc.), and the non-crystallized semiconductor layer is formed. The crystalline semiconductor layer is crystallized by a known crystallization method such as a laser crystallization method, a thermal crystallization method using an RTA or a furnace furnace, or a thermal crystallization method using a metal element that promotes crystallization. Let me.

The insulating film 110116 includes silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxide (SiNx).
It can be provided by a single-layer structure of an insulating film having oxygen or nitrogen such as SiOxNy) (x> y) and silicon nitride (SiNxOy) (x> y), or a laminated structure thereof.

The gate electrode 110117 may have a single-layer conductive film or a laminated structure of two-layer or three-layer conductive film. As a material for the gate electrode 110117, a known conductive film can be used. For example, a single film of an element such as tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), silicon (Si), or a nitride film of the element (typically). Tantalum nitride film, tungsten nitride film, titanium nitride film), or
An alloy film in which the elements are combined (typically a Mo-W alloy or a Mo-Ta alloy), a silicide film of the element (typically a tungsten silicide film or a titanium silicide film) or the like can be used. The above-mentioned single film, nitride film, alloy film, silicide film and the like may be used as a single layer or may be used in a laminated manner.

The insulating film 110118 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxide (SiOxNy) (x> y) by a known means (sputtering method, plasma CVD method, etc.).
, Silicon nitride (SiNxOy) (x> y) or other insulating film having oxygen or nitrogen or DLC (
It can be provided by a single-layer structure of a carbon-containing film such as diamond-like carbon) or a laminated structure thereof.

The insulating film 110119 is made of a siloxane resin, silicon oxide (SiOx), silicon nitride (
SiNx), silicon oxide (SiOxNy) (x> y), silicon nitride (SiNxOy)
An insulating film having oxygen or nitrogen such as (x> y), a film containing carbon such as DLC (diamond-like carbon), or an epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. It can be provided in a single layer or laminated structure made of an organic material. The siloxane resin corresponds to a resin containing a Si—O—Si bond.
The skeleton structure of siloxane is composed of the bonds of silicon (Si) and oxygen (O). As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent. It is also possible to directly provide the insulating film 110119 so as to cover the gate electrode 110117 without providing the insulating film 110118.

The conductive film 110123 includes Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, and M.
A simple substance film of an element such as n, a nitride film of the element, an alloy film in which the elements are combined, a silicide film of the element, or the like can be used. For example, as an alloy containing a plurality of the elements, an Al alloy containing C and Ti, an Al alloy containing Ni, and the like.
Al alloys containing C and Ni, Al alloys containing C and Mn, and the like can be used. For example, when it is provided in a laminated structure, it can be a structure in which Al is sandwiched between Mo or Ti. By doing so, the resistance of Al to heat and chemical reaction can be improved.

Next, the features of each structure will be described with reference to the cross-sectional views of the transistors having a plurality of different structures shown in FIG. 51 (A).

Since 110101 is a single drain transistor and can be manufactured by a simple method,
It has the advantages of low manufacturing cost and high yield. Here, the semiconductor layer 11011
The impurities in 3 and 110115 are different from each other, and the semiconductor layer 110113 is used as a channel region and the semiconductor layer 110115 is used as a source region and a drain region. in this way,
By controlling the amount of impurities, the resistivity of the semiconductor layer can be controlled. Semiconductor layer and conductive film 110
The electrical connection state with 123 can be brought closer to the ohmic connection. As a method for forming semiconductor layers having different amounts of impurities, a method of dropping impurities into the semiconductor layer using the gate electrode 110117 as a mask can be used.

The 110102 is a transistor having a taper angle of a certain value or more on the gate electrode 110117, and can be manufactured by a simple method, so that there are advantages that the manufacturing cost is low and the yield can be high. Here, the semiconductor layers 110113, 110114, and 110115 have different impurity concentrations, the semiconductor layer 110113 is a channel region, the semiconductor layer 110114 is a low concentration drain (LDD) region, and the semiconductor layer 110.
115 is used as a source region and a drain region. By controlling the amount of impurities in this way, the resistivity of the semiconductor layer can be controlled. The electrical connection state between the semiconductor layer and the conductive film 110123 can be brought close to that of an ohmic connection. Since it has an LDD region, it is difficult for a high electric field to be applied to the inside of the transistor, and deterioration of the element due to hot carriers can be suppressed. As a method of forming semiconductor layers having different amounts of impurities, the gate electrode 110
A method of dropping impurities into the semiconductor layer using 117 as a mask can be used. 1
In 10102, since the gate electrode 110117 has a taper angle of a certain value or more, the concentration of impurities that pass through the gate electrode 110117 and are dopeed to the semiconductor layer is provided with a gradient. The LDD region can be easily formed.

110103 is a transistor in which the gate electrode 110117 is composed of at least two layers, and the lower gate electrode has a longer shape than the upper gate electrode. In the present specification, the shapes of the upper layer gate electrode and the lower layer gate electrode are referred to as a hat type. Gate electrode 110
Since the shape of 117 is hat-shaped, the LDD region can be formed without adding a photomask. In addition, like 110103, the LDD region is the gate electrode 11.
The structure that overlaps with 0117, especially the GOLD structure (Gate Overlapped)
It is called LDD). As a method of forming the shape of the gate electrode 110117 into a hat shape, the following method may be used.

First, when patterning the gate electrode 110117, the lower layer gate electrode and the upper layer gate electrode are etched by dry etching to form a shape with an inclination (taper) on the side surface. .. Subsequently, it is processed by anisotropic etching so that the inclination of the gate electrode in the upper layer becomes close to vertical. As a result, a gate electrode having a hat-shaped cross section is formed. Then twice,
Semiconductor layer 1101 used as a channel region by doping impurity elements
13. The semiconductor layer 110114 used as the LDD region and the semiconductor layer 110115 used as the source electrode and the drain electrode are formed.

The LDD region overlapping the gate electrode 110117 is the Lov region, and the gate electrode 11
The LDD region that does not overlap with 0117 will be referred to as the Loff region. Here, Lof
The f region has a high effect of suppressing the off-current value, but has a low effect of relaxing the electric field near the drain to prevent deterioration of the on-current value due to hot carriers. On the other hand, the Lov region relaxes the electric field near the drain and is effective in preventing deterioration of the on-current value, but the effect of suppressing the off-current value is low. Therefore, it is preferable to manufacture a transistor having a structure according to the required characteristics for each of various circuits. For example, when a semiconductor device is used as a display device, it is preferable to use a transistor having a Loff region as the pixel transistor in order to suppress the off-current value.
On the other hand, as the transistor in the peripheral circuit, it is preferable to use a transistor having a Lov region in order to relax the electric field in the vicinity of the drain and prevent deterioration of the on-current value.

The 110104 is in contact with the side surface of the gate electrode 110117 and is in contact with the side wall 110121.
It is a transistor having. By having the side wall 110121, the region overlapping the side wall 110121 can be set as the LDD region.

The 110105 is an LDD (Lof) by doping the semiconductor layer with a mask.
f) A transistor that forms a region. By doing so, the LDD region can be reliably formed, and the off-current value of the transistor can be reduced.

110106 is LDD (Lov) by doping the semiconductor layer with a mask.
) It is a transistor that forms a region. By doing so, the LDD region can be reliably formed, the electric field in the vicinity of the drain of the transistor can be relaxed, and the deterioration of the on-current value can be reduced.

Next, an example of a method for manufacturing a transistor will be described with reference to FIGS. 51 (B) to 51 (G).

The structure and manufacturing method of the transistor are not limited to those shown in FIG. 51, and various structures and manufacturing methods can be used.

In the present embodiment, the insulating film 1 is on the surface of the substrate 110111, on the surface of the insulating film 110112, on the surface of the semiconductor layer 110113, on the surface of 110114, and on the surface of 110115.
On the surface of 10116, on the surface of the insulating film 110118, or on the surface of the insulating film 110119.
The semiconductor layer or insulating film can be oxidized or nitrided by performing oxidation or nitriding using plasma treatment. In this way, the surface of the semiconductor layer or the insulating film is modified by oxidizing or nitriding the semiconductor layer or the insulating film using plasma treatment, and compared with the insulating film formed by the CVD method or the sputtering method. Since a more dense insulating film can be formed, defects such as pinholes can be suppressed and the characteristics of the semiconductor device can be improved.

First, the surface of the substrate 110111 is washed with hydrofluoric acid (HF), alkali or pure water.
As the substrate 110111, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate containing stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET) and polyethylene naphthalate (PE)
It is also possible to use a substrate made of a plastic typified by N) or polyether sulfone (PES) or a synthetic resin having flexibility such as acrylic. Here, the substrate 11
The case where the glass substrate is used as 0111 is shown.

Here, an oxide film or a nitride film may be formed on the surface of the substrate 110111 by oxidizing or nitriding the surface of the substrate 110111 by performing plasma treatment on the surface of the substrate 110111 (FIG. 51 (B)). .. An insulating film such as an oxide film or a nitride film formed by subjecting the surface to plasma treatment is also referred to as a plasma-treated insulating film below. In FIG. 51 (B),
The insulating film 131 is a plasma-treated insulating film. Generally, when a semiconductor element such as a thin film transistor is provided on a substrate such as glass or plastic, an impurity element such as an alkali metal or an alkaline earth metal contained in the glass or plastic is mixed in the semiconductor element. Contamination may affect the characteristics of semiconductor devices. However, by nitriding the surface of a substrate made of glass, plastic, or the like, it is possible to prevent impurity elements such as alkali metal or alkaline earth metal contained in the substrate from being mixed into the semiconductor element.

When the surface is oxidized by plasma treatment, it is provided in an oxygen atmosphere (for example, oxygen (O _2).
) And noble gas (including at least one of He, Ne, Ar, Kr, Xe), oxygen and hydrogen (H ₂ ) and noble gas atmosphere, or dinitrogen monoxide and noble gas atmosphere. )
Perform plasma processing with. On the other hand, when the semiconductor layer is nitrided by plasma treatment, it is in a nitrogen atmosphere (for example, _{containing at least one of nitrogen (N 2} ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or nitrogen, hydrogen, and a rare gas atmosphere, or subjected to plasma treatment in an NH ₃ a rare gas). As the noble gas, for example, Ar can be used. Alternatively, a gas in which Ar and Kr are mixed may be used. Therefore, the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma treatment. For example, when Ar is used, Ar is contained in the plasma-treated insulating film.

In the plasma treatment, the electron density is 1 × 10 ¹¹ cm ^-3 or more in the atmosphere of the gas.
It is preferably performed at × 10 ¹³ cm ^-3 or less and the electron temperature of the plasma is 0.5 ev or more and 1.5 ev or less. Since the electron density of the plasma is high and the electron temperature in the vicinity of the object to be processed is low, damage to the object to be processed by the plasma can be prevented. Since the electron density of plasma ^{is as high as 1 × 10 11} cm ^-3 or more, the oxide or nitride film formed by oxidizing or nitriding the object to be irradiated using plasma treatment is produced by the CVD method or sputtering. Compared with the film formed by the method or the like, the film thickness and the like are excellent in uniformity, and a dense film can be formed. Alternatively, since the electron temperature of the plasma is as low as 1 eV or less, the oxidation or nitriding treatment can be performed at a lower temperature than the conventional plasma treatment or thermal oxidation method. For example, even if the plasma treatment is performed at a temperature 100 degrees or more lower than the strain point temperature of the glass substrate, the oxidation or nitriding treatment can be sufficiently performed. As the frequency for forming the plasma, a high frequency such as a microwave (2.45 GHz) can be used. Unless otherwise specified below, the plasma treatment shall be performed using the above conditions.

Although FIG. 51 (B) shows a case where a plasma-treated insulating film is formed by plasma-treating the surface of the substrate 110111, the present embodiment shows the substrate 11011.
The case where the plasma-treated insulating film is not formed on the surface of 1 is also included.

Although the plasma-treated insulating film formed by plasma-treating the surface of the object to be treated is not shown in FIGS. 51 (C) to 51 (G), in the present embodiment, the substrate 11
0111, insulating film 110112, semiconductor layers 110113, 110114, 110115,
The case where a plasma-treated insulating film formed by performing plasma treatment is present on the surface of the insulating film 110116, the insulating film 110118, or the insulating film 110119 is also included.

Next, the insulating film 110112 is formed on the substrate 110111 by using known means (sputtering method, LPCVD method, plasma CVD method, etc.) (FIG. 51 (C)). As the insulating film 110112, silicon oxide (SiOx) or silicon oxide (SiOxNy) (x> y) can be used.

Here, a plasma-treated insulating film may be formed on the surface of the insulating film 110112 by subjecting the surface of the insulating film 110112 to plasma treatment and oxidizing or nitriding the insulating film 110112. By oxidizing the surface of the insulating film 110112, the surface of the insulating film 110112 can be modified to obtain a dense film having few defects such as pinholes. By oxidizing the surface of the insulating film 110112, a plasma-treated insulating film having a low N atom content can be formed. Therefore, when a semiconductor layer is provided in the plasma-treated insulating film, the interface between the plasma-treated insulating film and the semiconductor layer The characteristics are improved. The plasma-treated insulating film is a noble gas used for plasma treatment (
Includes at least one of He, Ne, Ar, Kr, Xe). The plasma treatment can be carried out in the same manner under the above-mentioned conditions.

Next, island-shaped semiconductor layers 110113 and 110114 are formed on the insulating film 110112 (.
FIG. 51 (D). The island-shaped semiconductor layers 110113 and 110114 are formed of silicon (S) on the insulating film 110112 by using known means (sputtering method, LPCVD method, plasma CVD method, etc.).
An amorphous semiconductor layer is formed using a material containing i) as a main component (for example, Si _x Ge _1-x, etc.), the amorphous semiconductor layer is crystallized, and the semiconductor layer is selectively etched. Can be provided by The crystallization of the amorphous semiconductor layer is carried out by a laser crystallization method, a thermal crystallization method using an RTA or a furnace furnace, a thermal crystallization method using a metal element that promotes crystallization, or these methods. It can be carried out by a known crystallization method such as a method combining the above. Here, the ends of the island-shaped semiconductor layer are provided in a shape close to a right angle (θ = 85 to 100 °). Alternatively, the semiconductor layer 110114, which is a low-concentration drain region, uses a mask to remove impurities.
It may be formed by pinging.

Here, the surfaces of the semiconductor layers 110113 and 110114 are subjected to plasma treatment, and the semiconductor layer 1 is subjected to plasma treatment.
By oxidizing or nitriding the surfaces of 10113 and 110114, the semiconductor layer 11011
3. A plasma-treated insulating film may be formed on the surface of 110114. For example, the semiconductor layer 11
When Si is used as 0113 and 110114, silicon oxide (SiOx) or silicon nitride (SiNx) is formed as the plasma-treated insulating film. Alternatively, the semiconductor layers 110113 and 110114 may be oxidized by plasma treatment and then nitrided by performing plasma treatment again. In this case, silicon oxide (SiOx) is formed in contact with the semiconductor layers 110113 and 110114, and silicon nitride (SiNxOy) (x>) is formed on the surface of the silicon oxide.
y) is formed. When the semiconductor layer is oxidized by plasma treatment, it may be in an oxygen atmosphere (for example, _{including at least one of oxygen (O 2} ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe)) or. Plasma treatment is performed with oxygen, hydrogen (H ₂ ) and a noble gas atmosphere or dinitrogen monoxide and a noble gas atmosphere). On the other hand, when the semiconductor layer is nitrided by plasma treatment, it is in a nitrogen atmosphere (for example, nitrogen (N ₂ ) and a rare gas (He, Ne, Ar, Kr, X).
In an atmosphere (including at least one of e), or in a nitrogen, hydrogen, and noble gas atmosphere or NH
Plasma treatment is performed in step 3 and under a noble gas atmosphere). As the noble gas, for example, Ar can be used. Alternatively, a gas in which Ar and Kr are mixed may be used. Therefore, the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma treatment. For example, when Ar is used, A is used as the plasma-treated insulating film.
r is included.

Next, the insulating film 110116 is formed (FIG. 51 (E)). The insulating film 110116 uses a known means (sputtering method, LPCVD method, plasma CVD method, etc.) to form silicon oxide (SiOx).
), Silicon nitride (SiNx), Silicon nitride (SiOxNy) (x> y), Silicon nitride (SiNx)
It can be provided by a single-layer structure of an insulating film having oxygen or nitrogen such as SiNxOy) (x> y), or a laminated structure thereof. When a plasma-treated insulating film is formed on the surfaces of the semiconductor layers 110113 and 110114 by plasma-treating the surfaces of the semiconductor layers 110113 and 110114, the plasma-treated insulating film can also be used as the insulating film 110116. ..

Here, the surface of the insulating film 110116 may be subjected to plasma treatment, and the surface of the insulating film 110116 may be oxidized or nitrided to form a plasma-treated insulating film on the surface of the insulating film 110116. The plasma-treated insulating film is a rare gas (He, Ne, which was used for plasma treatment.
Includes at least one of Ar, Kr, Xe). The plasma treatment can be carried out in the same manner under the above-mentioned conditions.

Alternatively, the insulating film 110116 may be oxidized by once performing plasma treatment in an oxygen atmosphere, and then nitrided by performing plasma treatment again in a nitrogen atmosphere. By subjecting the insulating film 110116 to plasma treatment in this way and oxidizing or nitriding the surface of the insulating film 110116, the surface of the insulating film 110116 can be modified to form a dense film. Since the insulating film obtained by performing the plasma treatment is denser and has less defects such as pinholes as compared with the insulating film formed by the CVD method or the sputtering method, the characteristics of the thin film transistor can be improved.

Next, the gate electrode 110117 is formed (FIG. 51 (F)). The gate electrode 110117 can be formed by using known means (sputtering method, LPCVD method, plasma CVD method, etc.).

In 110101, the semiconductor layer 110115 used as the source region and the drain region can be formed by performing impurity dropping after forming the gate electrode 110117.

In 110102, by performing impurity dropping after forming the gate electrode 110117, 110114 used as the LDD region and the semiconductor layer 110115 used as the semiconductor layer source region and drain region can be formed.

In 110103, by performing impurity dropping after forming the gate electrode 110117, 110114 used as the LDD region and the semiconductor layer 110115 used as the semiconductor layer source region and drain region can be formed.

In 110104, the side wall 110121 is on the side surface of the gate electrode 110117.
110114 used as the LDD region by performing impurity doping after forming
And the semiconductor layer 110115 used as the semiconductor layer source region and drain region can be formed.

The side wall 110121 is made of silicon oxide (SiOx) or silicon nitride (SiNx).
Can be used. As a method of forming the side wall 110121 on the side surface of the gate electrode 110117, for example, after forming the gate electrode 110117, silicon oxide (
After forming a film of SiOx) or silicon nitride (SiNx) by a known method, a method of etching a silicon oxide (SiOx) or silicon nitride (SiNx) film by anisotropic etching can be used. By doing so, silicon oxide (SiO) is formed only on the side surface of the gate electrode 110117.
Since the x) or silicon nitride (SiNx) film can be left, the side wall 110121 can be formed on the side surface of the gate electrode 110117.

In 110105, after forming the mask 110122 so as to cover the gate electrode 110117, impurities doping is performed to use the mask 110122 as an LDD (Loff) region11.
The 0114 and the semiconductor layer 110115 used as the semiconductor layer source region and drain region can be formed.

In 110106, by performing impurity dropping after forming the gate electrode 110117, 110114 used as the LDD (Lov) region and the semiconductor layer 110115 used as the semiconductor layer source region and drain region can be formed. ..

Next, the insulating film 110118 is formed (FIG. 51 (G)). The insulating film 110118 is made of silicon oxide (SiOx) and silicon nitride (S) by a known means (sputtering method, plasma CVD method, etc.).
iNx), Silicon Oxide (SiOxNy) (x> y), Silicon Oxide (SiNxOy) (
It can be provided by a single-layer structure of an insulating film having oxygen or nitrogen such as x> y), a film containing carbon such as DLC (diamond-like carbon), or a laminated structure thereof.

Here, the surface of the insulating film 110118 may be subjected to plasma treatment, and the surface of the insulating film 110118 may be oxidized or nitrided to form a plasma-treated insulating film on the surface of the insulating film 110118. The plasma-treated insulating film is a rare gas (He, Ne, which was used for plasma treatment.
Includes at least one of Ar, Kr, Xe). The plasma treatment can be carried out in the same manner under the above-mentioned conditions.

Next, the insulating film 110119 is formed. The insulating film 110119 is made of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxide (SiOxNy) (x> y), silicon nitride (SiNxOy) (SiNxOy) by a known means (spatter method, plasma CVD method, etc.). In addition to an insulating film having oxygen or nitrogen such as x> y) and a carbon-containing film such as DLC (diamond-like carbon), epoxy, polyimide, polyamide, polyvinylphenol, and benzocyclobutene can be used. , An organic material such as acrylic, a single-layer structure of siloxane resin, or a laminated structure thereof. The siloxane resin corresponds to a resin containing a Si—O—Si bond. The skeleton structure of siloxane is composed of the bonds of silicon (Si) and oxygen (O). As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent. The plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment. For example, when Ar is used, plasma-treated insulating film is used. Ar is contained in the film.

When an organic material such as polyimide, polyamide, polyvinylphenol, benzocyclobutene, or acrylic, a siloxane resin, or the like is used as the insulating film 110119, the insulating film 110119 is used.
The surface of the insulating film can be modified by oxidizing or nitriding the surface of the insulating film by plasma treatment. By modifying the surface, the strength of the insulating film 110119 is improved, and it is possible to reduce physical damage such as crack generation during opening formation and film loss during etching. By modifying the surface of the insulating film 110119, the insulating film 110
When the conductive film 110123 is formed on the 119, the adhesion with the conductive film is improved. For example
When nitriding is performed by plasma treatment using a siloxane resin as the insulating film 110119, the surface of the siloxane resin is nitrided to form a plasma-treated insulating film containing nitrogen or a rare gas, and the physical strength is improved. ..

Next, in order to form the conductive film 110123 electrically connected to the semiconductor layer 110115,
A contact hole is formed on the insulating film 110119, the insulating film 110118, and the insulating film 110116. The shape of the contact hole may be a taper shape. By doing this,
The coverage of the conductive film 110123 can be improved.

FIG. 55 shows the cross-sectional structure of the bottom gate type transistor and the cross-sectional structure of the capacitive element.

A first insulating film (insulating film 110502) is formed on the entire surface of the substrate 110501. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. The first insulating film includes a silicon oxide film, a silicon nitride film, or a silicon oxide film (SiOxNy).
) Etc., or a laminate thereof can be used.

A first conductive layer (conductive layer 110503 and conductive layer 110504) is formed on the first insulating film. The conductive layer 110503 includes a portion that functions as a gate electrode of the transistor 110520. The conductive layer 110504 includes a portion that functions as a first electrode of the capacitive element 110521. The first conductive layer includes Ti, Mo, Ta, Cr, W, Al, and N.
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

A second insulating film (insulating film 110504) is formed so as to cover at least the first conductive layer. The second insulating film has a function as a gate insulating film. As the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film or a silicon nitride nitride film (SiOxNy), or a laminate thereof can be used.

It is desirable to use a silicon oxide film as the second insulating film of the portion in contact with the semiconductor layer. This is because the trap level at the interface where the semiconductor layer and the second insulating film are in contact with each other is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A semiconductor layer is formed on a part of the portion of the second insulating film that overlaps with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like. Then, a part of the semiconductor layer is extended to a portion on the second insulating film that is not formed so as to overlap with the first conductive layer. The semiconductor layer has a channel forming region (channel forming region 1105).
10), it has an LDD region (LDD region 110508, LDD region 110509) and an impurity region (impurity region 110505, impurity region 110506, impurity region 110507). The channel forming region 110510 functions as a channel forming region of the transistor 110520. The LDD region 110508 and the LDD region 110509 function as the LDD region of the transistor 110520. The LDD area 110508 and the LDD area 110509 are not always necessary. The impurity region 110505 is the transistor 11
A portion that functions as one of a source electrode and a drain electrode of 0520 is included. Impurity region 1
Reference numeral 00506 includes a portion that functions as the other of the source electrode and the drain electrode of the transistor 110520. The impurity region 110507 includes a portion that functions as a second electrode of the capacitive element 110521.

A third insulating film (insulating film 110511) is formed on the entire surface. A contact hole is selectively formed in a part of the third insulating film. The insulating film 110511 has a function as an interlayer film. As the third insulating film, an inorganic material (silicon oxide, silicon nitride, silicon oxide, etc.), an organic compound material having a low dielectric constant (photosensitive or non-photosensitive organic resin material), or the like can be used. Alternatively, a material containing siloxane can also be used. Siloxane is a material whose skeletal structure is composed of a bond between silicon (Si) and oxygen (O). As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent.

A second conductive layer (conductive layer 110512 and conductive layer 110513) is formed on the third insulating film. The conductive layer 110512 is connected to the other of the source electrode and the drain electrode of the transistor 110520 via a contact hole formed in the third insulating film. Therefore, the conductive layer 110512 includes a portion that functions as the other of the source electrode and the drain electrode of the transistor 110520. The conductive layer 110513 includes a portion that functions as a first electrode of the capacitive element 110521. The second conductive layer includes Ti, Mo, and Ta.
, Cr, W, Al, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, G
e and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

As a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

The structure of the transistor and the capacitive element when an amorphous silicon (a-Si: H) film is used for the semiconductor layer of the transistor will be described.

FIG. 52 shows the cross-sectional structure of the top-gate type transistor and the cross-sectional structure of the capacitive element.

A first insulating film (insulating film 110202) is formed on the entire surface of the substrate 110201. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. The first insulating film includes a silicon oxide film, a silicon nitride film, or a silicon oxide film (SiOxNy).
) Etc., or a laminate thereof can be used.

It is not always necessary to form the first insulating film. In this case, the number of steps can be reduced. Manufacturing costs can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (conductive layer 110203, conductive layer 110204, and conductive layer 110205) is formed on the first insulating film. The conductive layer 110203 includes a portion that functions as one of the source electrode and the drain electrode of the transistor 110220. Conductive layer 11020
Reference numeral 4 denotes a portion that functions as the other electrode of the source electrode and the drain electrode of the transistor 110220. The conductive layer 110205 includes a portion that functions as a first electrode of the capacitive element 110221. The first conductive layer includes Ti, Mo, Ta, Cr, W, Al, and N.
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

A first semiconductor layer (semiconductor layer 110) is placed on the conductive layer 110203 and the conductive layer 110204.
206 and the semiconductor layer 110207) are formed. The semiconductor layer 110206 includes a portion that functions as one of the source electrode and the drain electrode. The semiconductor layer 110207 is
Includes a portion that functions as the other electrode of the source electrode and the drain electrode. As the first semiconductor layer, silicon or the like containing phosphorus or the like can be used.

A second insulating film between the conductive layer 110203 and the conductive layer 110204 and on the first insulating film.
(Semiconductor layer 110208) is formed. And the semiconductor layer 110208
A part of the above extends to the conductive layer 110203 and the conductive layer 110204. The semiconductor layer 110208 includes a portion that functions as a channel region of the transistor 110220. As the second semiconductor layer, a non-crystalline semiconductor layer such as amorphous silicon (a-Si: H), a semiconductor layer such as microcrystalline semiconductor (μ-Si: H), or the like can be used. ..

A second insulating film (so as to cover at least the semiconductor layer 110208 and the conductive layer 110205)
The insulating film 110209 and the insulating film 110210) are formed. The second insulating film is a gay
It has a function as an insulating film. As the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film or a silicon nitride nitride film (SiOxNy), or a laminate thereof can be used.

It is desirable to use a silicon oxide film as the second insulating film of the portion in contact with the second semiconductor layer. This is because the trap level at the interface where the second semiconductor layer and the second insulating film are in contact with each other is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A second conductive layer (conductive layer 110211 and conductive layer 110212) is formed on the second insulating film. The conductive layer 110211 includes a portion that functions as a gate electrode of the transistor 110220. The conductive layer 110212 has a function as a second electrode or wiring of the capacitive element 110221. The second conductive layer includes Ti, Mo, Ta, Cr, W, and A.
l, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

As a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

FIG. 53 shows the cross-sectional structure of the inverted stagger type (bottom gate type) transistor and the cross-sectional structure of the capacitive element. In particular, the transistor shown in FIG. 53 has a structure called a channel etch type.

A first insulating film (insulating film 110302) is formed on the entire surface of the substrate 110301. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. The first insulating film includes a silicon oxide film, a silicon nitride film, or a silicon oxide film (SiOxNy).
) Etc., or a laminate thereof can be used.

It is not always necessary to form the first insulating film. In this case, the number of steps can be reduced. Manufacturing costs can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (conductive layer 110303 and conductive layer 110304) is formed on the first insulating film. The conductive layer 110303 includes a portion that functions as a gate electrode of the transistor 110320. The conductive layer 110304 includes a portion that functions as a first electrode of the capacitive element 110321. The first conductive layer includes Ti, Mo, TB, Cr, W, Bl, and N.
d, Cu, Bg, Bu, Pt, NA-Si, Zn, Fe, BB, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

A second insulating film (insulating film 110302) is formed so as to cover at least the first conductive layer. The second insulating film has a function as a gate insulating film. As the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film or a silicon nitride nitride film (SiOxNy), or a laminate thereof can be used.

It is desirable to use a silicon oxide film as the second insulating film of the portion in contact with the semiconductor layer. This is because the trap level at the interface where the semiconductor layer and the second insulating film are in contact with each other is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A first semiconductor layer (semiconductor layer 11) is formed on a part of the second insulating film that overlaps with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0306) is formed. A part of the semiconductor layer 110308 is extended to a portion of the second insulating film that does not overlap with the first conductive layer. Semiconductor layer 11
0306 includes a portion that functions as a channel region of the transistor 110320. As the semiconductor layer 110306, a non-crystalline semiconductor layer such as amorphous silicon (A—Si: H), a semiconductor layer such as microcrystalline semiconductor (μ—Si: H), or the like can be used.

A second semiconductor layer (semiconductor layer 110307 and semiconductor layer 110) is partially formed on the first semiconductor layer.
307) is formed. The semiconductor layer 110307 includes a portion that functions as one of the source electrode and the drain electrode. The semiconductor layer 110308 includes a portion that functions as the other electrode of the source electrode and the drain electrode. As the second conductor layer, silicon or the like containing phosphorus or the like can be used.

On the second semiconductor layer and the second insulating film, the second conductive layer (conductive layer 110309, conductive layer 1)
10310 and the conductive layer 110311) are formed. The conductive layer 110309 includes a portion that functions as one of a source electrode and a drain electrode of the transistor 110320. The conductive layer 110310 includes a portion that functions as the other side of the source and drain electrodes of the transistor 110320. The conductive layer 110312 includes a portion that functions as a second electrode of the capacitive element 110321. The second conductive layer includes Ti, Mo, Ta, Cr, W, Al, and N.
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

As a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

Here, an example of a process characterized by a channel etch type transistor will be described. The same mask can be used to form the first semiconductor layer and the second semiconductor layer. In particular,
The first semiconductor layer and the second semiconductor layer are continuously formed. Then, the first semiconductor layer and the second semiconductor layer are formed by using the same mask.

Another example of the process characterized by the channel etch type transistor will be described. The channel region of the transistor can be formed without using a new mask. In particular,
After the second conductive layer is formed, a part of the second semiconductor layer is removed by using the second conductive layer as a mask. Alternatively, a part of the second semiconductor layer is removed using the same mask as the second conductive layer. Then, the first semiconductor layer formed below the removed second semiconductor layer becomes the channel region of the transistor.

FIG. 54 shows the cross-sectional structure of the inverted stagger type (bottom gate type) transistor and the cross-sectional structure of the capacitive element. In particular, the transistor shown in FIG. 54 has a structure called a channel protection type (channel stop type).

A first insulating film (insulating film 110402) is formed on the entire surface of the substrate 110401. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. The first insulating film includes a silicon oxide film, a silicon nitride film, or a silicon oxide film (SiOxNy).
) Etc., or a laminate thereof can be used.

It is not always necessary to form the first insulating film. In this case, the number of steps can be reduced. Manufacturing costs can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (conductive layer 110403 and conductive layer 110404) is formed on the first insulating film. The conductive layer 110403 includes a portion that functions as a gate electrode of the transistor 110420. The conductive layer 110404 includes a portion that functions as a first electrode of the capacitive element 110421. The first conductive layer includes Ti, Mo, TC, Cr, W, Cl, and N.
d, Cu, Cg, Cu, Pt, NC, Si, Zn, Fe, CC, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

A second insulating film (insulating film 110402) is formed so as to cover at least the first conductive layer. The second insulating film has a function as a gate insulating film. As the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film or a silicon nitride nitride film (SiOxNy), or a laminate thereof can be used.

It is desirable to use a silicon oxide film as the second insulating film of the portion in contact with the semiconductor layer. This is because the trap level at the interface where the semiconductor layer and the second insulating film are in contact with each other is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A first semiconductor layer (semiconductor layer 11) is formed on a part of the second insulating film that overlaps with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0406) is formed. A part of the semiconductor layer 110408 is extended to a portion of the second insulating film that does not overlap with the first conductive layer. Semiconductor layer 11
0406 includes a portion that functions as a channel region of transistor 110420. As the semiconductor layer 110406, a non-crystalline semiconductor layer such as amorphous silicon (C—Si: H), a semiconductor layer such as microcrystalline semiconductor (μ—Si: H), or the like can be used.

A third insulating film (insulating film 110412) is formed on a part of the first semiconductor layer. The insulating film 110412 has a function of preventing the channel region of the transistor 110420 from being removed by etching. That is, the insulating film 110412 functions as a channel protective film (channel stop film). As the third insulating film, a single layer such as a silicon oxide film, a silicon nitride film or a silicon nitride nitride film (SiOxNy), or a laminate thereof can be used.

A second semiconductor layer (semiconductor layer 110) is formed on a part on the first semiconductor layer and a part on the third insulating film.
407 and the semiconductor layer 110408) are formed. The semiconductor layer 110407 includes a portion that functions as one of the source electrode and the drain electrode. The semiconductor layer 110408 is
Includes a portion that functions as the other electrode of the source electrode and the drain electrode. As the second conductor layer, silicon or the like containing phosphorus or the like can be used.

A second conductive layer (conductive layer 110409, conductive layer 110410, and conductive layer 110411) is formed on the second semiconductor layer. The conductive layer 110409 is a transistor 110420.
Includes a portion that functions as one of the source electrode and the drain electrode. The conductive layer 110410 is
Includes a portion of transistor 110420 that functions as the other of the source and drain electrodes. The conductive layer 110412 includes a portion that functions as a second electrode of the capacitive element 110421. The second conductive layer includes Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, and A.
u, Pt, NC, Si, Zn, Fe, Ca, Ge and the like, or alloys thereof can be used. Alternatively, a laminate of these elements (including alloys) can be used.

As a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

Here, an example of a process characterized by a channel protection type transistor will be described. The same mask can be used to form the first semiconductor layer, the second semiconductor layer and the second conductive layer.
At the same time, a channel region can be formed. Specifically, a first semiconductor layer is formed to form a film,
Next, a third insulating film (channel protective film, channel stop film) is formed using a mask, and then a second semiconductor layer and a second conductive layer are continuously formed. Then, after the second conductive layer is formed, the first semiconductor layer, the second semiconductor layer, and the second conductive layer are formed by using the same mask. However, the first semiconductor layer below the third insulating film is protected by the third insulating film and is not removed by etching. This part (the third in the upper part of the first semiconductor layer)
The portion where the insulating film is formed) is the channel region.

Next, an example in which a semiconductor substrate is used as a substrate for manufacturing a transistor will be described. Since the transistor manufactured by using the semiconductor substrate has high mobility, the transistor size can be reduced. As a result, the number of transistors per unit area can be increased (integration degree can be increased), and in the same circuit configuration, the larger the integration degree, the smaller the substrate size can be, so that the manufacturing cost can be reduced. Further, with the same substrate size, the larger the degree of integration, the larger the circuit scale can be, so that the manufacturing cost remains almost the same and higher functions can be provided. In addition, there is little variation in characteristics, so
The manufacturing yield can also be increased. Further, since the operating voltage is small, the power consumption can be reduced. Further, since the mobility is high, high-speed operation is possible.

A circuit configured by integrating transistors manufactured using a semiconductor substrate can be mounted on an apparatus in the form of an IC chip or the like, so that the apparatus can have various functions. For example, peripheral drive circuits (data driver (source driver), scan driver (gate driver), timing controller, image processing circuit, interface circuit, power supply circuit, oscillation circuit, etc.) of the display device were manufactured using a semiconductor substrate. By integrating and configuring transistors, it is possible to manufacture a peripheral drive circuit having a small size, low power consumption, and high-speed operation at low cost and high yield. The circuit configured by integrating the transistors manufactured by using the semiconductor substrate may have a configuration having a transistor having a single polarity. By doing so, the manufacturing process can be simplified and the manufacturing cost can be reduced.

Other circuits that are configured by integrating transistors manufactured using a semiconductor substrate include
For example, it can be used for a display panel. More specifically, LCOS (Liquid)
It can be used for a reflective liquid crystal panel such as Crystal On Silicon), a DMD (Digital Micromirror Device) element in which micromirrors are integrated, an EL panel, and the like. By manufacturing these display panels using a semiconductor substrate, it is possible to manufacture display panels having a small size, low power consumption, and high-speed operation at low cost and high yield. The display panel also includes an element formed on an element having a function other than driving the display panel, such as a large-scale integrated circuit (LSI).

The method of manufacturing a transistor using a semiconductor substrate will be described below.

First, regions 110604 and 110606 (hereinafter, also referred to as regions 110604 and 110606) in which the elements are separated are formed on the semiconductor substrate 110600 (see FIG. 56 (A)). The regions 110604 and 110606 provided in the semiconductor substrate 110600 are each an insulating film 1.
It is separated by 10602 (also called a field oxide film). Here, a single crystal Si substrate having an n-type conductive type is used as the semiconductor substrate 110600, and the semiconductor substrate 1106
An example in which the p-well 110607 is provided in the region 110606 of 00 is shown.

The substrate 110600 can be used without particular limitation as long as it is a semiconductor substrate. For example, a single crystal Si substrate having an n-type or p-type conductive type, a compound semiconductor substrate (GaAs substrate, I).
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by Implanted Oxygen)
An SOI (Silicon on Insulator) substrate or the like produced by the method can be used.

The element separation regions 110604 and 110606 are subjected to a selective oxidation method (LOCOS (Local).
The Oxidation of Silicon) method) or the trench separation method or the like can be appropriately used.

The p-well formed in the region 110606 of the semiconductor substrate 110600 is the semiconductor substrate 11
It can be formed by selectively introducing an impurity element having a p-type conductive type into 0600. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing the p-type.

In this embodiment, since the semiconductor substrate 110600 uses a semiconductor substrate having an n-type conductive type, the impurity element is not introduced into the region 110604, but the impurity element showing the n-type is introduced. May form n-wells in region 110604. Phosphorus (P), arsenic (As) and the like can be used as the impurity element showing the n-type. on the other hand,
When a semiconductor substrate having a p-type conductive type is used, an impurity element showing an n-type may be introduced into the region 110604 to form an n-well, and the impurity element may not be introduced into the region 110606.

Next, the insulating films 110632 and 11063 are covered so as to cover the regions 110604 and 110606.
4 are formed respectively (see FIG. 56 (B)).

The insulating film 110632 and 110634 are, for example, heat-treated to perform a semiconductor substrate 110600.
The insulating film 110632 and 110634 can be formed from the silicon oxide film by oxidizing the surfaces of the regions 110604 and 110606 provided in the above. After forming a silicon oxide film by the thermal oxidation method, the surface of the silicon oxide film is nitrided by nitriding to form a laminated structure of the silicon oxide film and a film having oxygen and nitrogen (silicon oxynitride film). It may be formed.

Alternatively, as described above, the insulating film 110632 and 110634 may be formed by using plasma treatment. For example, regions 110604, 11 provided on the semiconductor substrate 110600.
By performing oxidation treatment or nitriding treatment on the surface of 0606 by high-density plasma treatment, a silicon oxide (SiOx) film or silicon nitride (SiNx) is used as the insulating film 110632 or 110634.
) Can be formed with a membrane. As another example, region 110604 by high-density plasma treatment
, 110606 may be subjected to nitriding treatment by performing oxidation treatment on the surface and then performing high density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 110604 and 110606, a (silicon oxynitride film) is formed on the silicon oxide film, and the insulating film 110 is formed.
Reference numeral 632 and 110634 are a film in which a silicon oxide film and a silicon oxynitride film are laminated. As another example, after forming a silicon oxide film on the surfaces of regions 110604 and 110606 by a thermal oxidation method, an oxidation treatment or a nitriding treatment may be performed by a high-density plasma treatment.

Insulating film 1106 formed in regions 110604 and 110606 of the semiconductor substrate 110600
32 and 110634 function as a gate insulating film in the transistor to be completed later.

Next, the insulating films 110632 and 11063 formed in the regions 110604 and 110606 are next.
A conductive film is formed so as to cover No. 4 (see FIG. 56 (C)). Here, as the conductive film, an example in which the conductive film 110636 and the conductive film 110638 are laminated in order is shown. Of course, the conductive film may be formed of a single layer or a laminated structure of three or more layers.

Examples of the conductive film 110636 and 110638 include tantalum (Ta) and tungsten (W).
, Titanium (Ti), Molybdenum (Mo), Aluminum (Al), Copper (Cu), Chromium (
It can be formed of an element selected from Cr), niobium (Nb), etc., or an alloy material or compound material containing these elements as a main component. Alternatively, these elements can be formed of a nitrided metal nitride film. In addition, it can also be formed of a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus, silicide introduced with a metal material, or the like.

Here, tantalum nitride is used as the conductive film 110636, and further, the conductive film 11063
No. 8 has a laminated structure using tungsten. In addition, as the conductive film 110636,
A single layer or laminated film selected from tungsten nitride, molybdenum nitride or titanium nitride can be used. As the conductive film 110638, a single layer or a laminated film selected from tantalum, molybdenum, and titanium can be used.

Next, the conductive films 110636 and 110638 provided in layers are selectively etched and removed to cover a part of the regions 110604 and 110606.
, 110638 are left to form gate electrodes 110640 and 110642, respectively (see FIG. 57 (A)).

Next, the resist mask 110648 was selectively formed so as to cover the region 110604, and the resist mask 110648 was selectively formed.
Region 1106 with the resist mask 110648 and gate electrode 110642 as masks
By introducing an impurity element into 06, an impurity region 110652 is formed (FIG. 57 (Fig. 57).
B) See). As the impurity element, an impurity element that imparts n-type or an impurity element that imparts p-type is used. Phosphorus (P), arsenic (As) and the like can be used as the impurity element showing the n-type. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing the p-type. Here, phosphorus (P) is used as the impurity element. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

In FIG. 57B, an impurity region 110652 and a channel formation region 11065 that form a source or drain region in the region 110606 by introducing an impurity element are introduced.
0 is formed.

Next, a resist mask 110666 was selectively formed so as to cover the region 110606.
Region 1106 with the resist mask 110666 and gate electrode 110640 as masks
By introducing an impurity element into 04, an impurity region 110670 is formed (FIG. 57 (Fig. 57).
See C)). As the impurity element, an impurity element that imparts n-type or an impurity element that imparts p-type is used. Phosphorus (P), arsenic (As) and the like can be used as the impurity element showing the n-type. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing the p-type. Here, an impurity element (for example, boron (B)) having a conductive type different from that of the impurity element introduced into the region 110606 in FIG. 57 (C) is introduced. As a result, the impurity region 11 forming the source or drain region in the region 110604
0670 and a channel forming region 110668 are formed. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, a second insulating film 110672 is formed so as to cover the insulating film 110632, 110634 and the gate electrode 110640, 110642. In addition, areas 110604, 1106
Wiring 110674 is formed to electrically connect with the impurity regions 110652 and 110670 formed in 06, respectively (see FIG. 57 (D)).

The second insulating film 110672 is made of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, Silicon Nitride (SiNx), Silicon Nitride (SiOxNy) (x> y), Silicon Nitride (S)
Insulating film with oxygen or nitrogen such as iNxOy) (x> y), carbon-containing film such as DLC (diamond-like carbon), organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic or siloxane It can be provided in a single layer or laminated structure made of a siloxane material such as a resin. The siloxane material is S
Corresponds to a material containing an i-O-Si bond. Siloxane is silicon (Si) and oxygen (O)
The skeletal structure is constructed by combining with. As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent.

The wiring 110674 is made of aluminum (Al) by a CVD method, a sputtering method, or the like.
Tungsten (W), Titanium (Ti), Tantalum (Ta), Molybdenum (Mo), Nickel (Ni), Platinum (Pt), Copper (Cu), Gold (Au), Silver (Ag), Manganese (Mn),
An element selected from neodymium (Nd), carbon (C), and silicon (Si), or an alloy material or compound material containing these elements as a main component, formed in a single layer or a laminate. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. Wiring 110674 is, for example, a barrier membrane and aluminum silicon (
Laminated structure of Al-Si) film and barrier membrane, barrier film and aluminum silicon (Al-Si)
It is preferable to adopt a laminated structure of a film, a titanium nitride (TiN) film, and a barrier film. The barrier membrane corresponds to a thin film made of titanium, titanium nitride, molybdenum, or molybdenum nitride. Wiring 11 because aluminum and aluminum silicon have low resistance and are inexpensive.
It is the most suitable material for forming 0674. For example, if the upper and lower barrier layers are provided,
It is possible to prevent the generation of hilok of aluminum or aluminum silicon. For example, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, this natural oxide film is reduced. As a result, wiring 1106
74 can be well connected electrically and physically to the crystalline semiconductor film.

It should be noted that the structure of the transistor is not limited to the structure shown in the figure. For example, a transistor structure having a structure such as an inverted stagger structure or a fin FET structure can be adopted. The finFET structure is suitable because it can suppress the short-channel effect associated with the miniaturization of the transistor size.

Next, another example in which a semiconductor substrate is used as a substrate for manufacturing a transistor will be described.

First, an insulating film is formed on the substrate 110800. Here, a single crystal Si having an n-type conductive type is used as the substrate 110800, and an insulating film 110802 and an insulating film 110804 are formed on the substrate 110800 (see FIG. 58 (A)). For example, silicon oxide (SiOx) is formed as the insulating film 110802 by heat-treating the substrate 110800. Furthermore, C
Silicon nitride (SiNx) is formed into a film by using the VD method or the like.

The substrate 110800 can be used without particular limitation as long as it is a semiconductor substrate. For example, a single crystal Si substrate having an n-type or p-type conductive type, a compound semiconductor substrate (GaAs substrate, I).
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by IMplanted OXygen)
An SOI (Silicon on Insulator) substrate or the like produced by the method can be used.

The insulating film 110804 may be provided by forming the insulating film 110802 and then nitriding the insulating film 110802 by high-density plasma treatment. The insulating film is a single layer or 3
It may have a laminated structure of layers or more.

Next, the pattern of the resist mask 110806 is selectively formed, and the substrate 110800 is selectively etched by using the resist mask 110806 as a mask.
The recess 110808 is selectively formed in (see FIG. 58 (B)). The etching of the substrate 110800, the insulating films 110802, and 110804 can be performed by dry etching using plasma.

Next, after removing the pattern of the resist mask 110806, the insulating film 110810 is formed so as to fill the recess 110808 formed in the substrate 110800 (FIG. 58 (C)).
reference).

The insulating film 110810 uses silicon oxide, silicon nitride, silicon oxide (SiOxNy) (x>y> 0), silicon nitride (Si) by using a CVD method, a sputtering method, or the like.
It is formed by using an insulating material such as NxOy) (x>y> 0). Here, the insulating film 11081
As 0, a silicon oxide film is formed using TEOS (tetraethyl orthosilicate) gas by a normal pressure CVD method or a reduced pressure CVD method.

Next, grinding treatment, polishing treatment or CMP (Chemical Mechanical P)
The surface of the substrate 110800 is exposed by performing the olishing process. Then, the surface of the substrate 110800 is divided by the insulating film 110810 formed in the recess 110808 of the substrate 110800. (See FIG. 59 (A)) Here, the divided regions are designated as regions 110812 and 11083, respectively. The insulating film 110811 is obtained by removing a part of the insulating film 110810 by a grinding treatment, a polishing treatment, or a CMP treatment.

Subsequently, by selectively introducing an impurity element having a p-type conductive type, the substrate 11
A p-well 110815 is formed in region 110813 of 0800. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing the p-type. Here, boron (B) is introduced into region 110813 as an impurity element. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

When a semiconductor substrate having an n-type conductive type is used as the substrate 110800, the region 1
Although it is not necessary to introduce an impurity element into 10812, n-wells may be formed in the region 110812 by introducing an impurity element showing an n-type. Phosphorus (P), arsenic (As) and the like can be used as the impurity element showing the n-type.

On the other hand, when a semiconductor substrate having a p-type conductive type is used, an impurity element showing an n-type is introduced into the region 110812 to form n-wells, and no impurity element is introduced into the regions 110812 and 110913. May be.

Next, the insulating film 11083 is formed on the surface of the region 110812 and 110913 of the substrate 110800.
2, 110834 are formed respectively (see FIG. 59 (B)).

The insulating film 110832 and 110834 can form the insulating film 110832 and 110834 with the silicon oxide film by, for example, performing heat treatment to oxidize the surface of the regions 110812 and 110813 provided on the substrate 110800. Alternatively, after forming a silicon oxide film by a thermal oxidation method, the surface of the silicon oxide film is nitrided by a nitride treatment to laminate the silicon oxide film and a film having oxygen and nitrogen (silicon oxynitride film). It may be formed by a structure.

Alternatively, as described above, the insulating film 110832, 110834 may be formed by using plasma treatment. For example, regions 110812 and 11081 provided on the substrate 110800.
By performing oxidation treatment or nitriding treatment on the surface of 3 by high-density plasma treatment, the insulating film 1
As 10832 and 110834, it can be formed of a silicon oxide (SiOx) film or a silicon nitride (SiNx) film. As another example, regions 110812, 1 by high-density plasma treatment.
After performing the oxidation treatment on the surface of 10813, the nitriding treatment may be performed by performing the high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surface of the region 110812 and 110813, a (silicon oxynitride film) is formed on the silicon oxide film, and the insulating film 1108 is formed.
32 and 110834 are films in which a silicon oxide film and a silicon oxynitride film are laminated. As another example, after forming a silicon oxide film on the surface of the region 110812 and 110813 by a thermal oxidation method, an oxidation treatment or a nitriding treatment may be performed by a high-density plasma treatment.

The insulating film 110 formed in the regions 110812 and 110913 of the substrate 110800.
832 and 110834 function as a gate insulating film in the transistor to be completed later.

Next, a conductive film is formed so as to cover the insulating films 110832 and 110834 formed in the regions 110812 and 11083 provided on the substrate 110800 (see FIG. 59 (C)).
Here, as the conductive film, an example in which the conductive film 110436 and the conductive film 110838 are laminated in order is shown. Of course, the conductive film may be formed of a single layer or a laminated structure of three or more layers.

Examples of the conductive film 110836 and 110838 include tantalum (Ta) and tungsten (W).
, Titanium (Ti), Molybdenum (Mo), Aluminum (Al), Copper (Cu), Chromium (
It can be formed of an element selected from Cr), niobium (Nb), etc., or an alloy material or compound material containing these elements as a main component. Alternatively, these elements can be formed of a nitrided metal nitride film. In addition, it can also be formed of a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus, silicide introduced with a metal material, or the like.

Here, tantalum nitride is used as the conductive film 110836, and the conductive film 110838 is further used.
A laminated structure using tungsten is used. In addition, as the conductive film 110836, a single layer or a laminated film selected from tantalum nitride, tungsten nitride, molybdenum nitride, or titanium nitride can be used. As the conductive film 110838, a single layer or a laminated film selected from tungsten, tantalum, molybdenum, and titanium can be used.

Next, the conductive films 110836 and 110838 provided in a laminated manner are selectively etched and removed to leave the conductive films 110863 and 110838 in a part of the regions 110812 and 110813 of the substrate 110800, respectively, as gate electrodes. It forms a functional conductive film 110840, 110842 (see FIG. 59 (D)). Here, the conductive film 11
The surface of the substrate 110800 is exposed in a region that does not overlap with 0840 and 110842.

Specifically, in the region 110812 of the substrate 110800, the portion of the insulating film 110832 that does not overlap with the conductive film 110840 is selectively removed, and the conductive film 110840 and the end portions of the insulating film 110832 are formed so as to substantially coincide with each other. Further, the region 1 of the substrate 110800
In 10813, the portion of the insulating film 110834 that does not overlap with the conductive film 110842 is selectively removed, and the conductive film 110842 and the end portion of the insulating film 110834 are formed so as to substantially coincide with each other.

In this case, the insulating film and the like in the non-overlapping portion may be removed at the same time as the formation of the conductive film 110840 and 110842, or the resist mask remaining after the formation of the conductive film 110840 and 110842 or the conductive film 110840 and 110842 is used as a mask. The insulating film or the like of the portion that does not become may be removed.

Next, the impurity element is selectively introduced into the regions 110812 and 110913 of the substrate 110800 (see FIG. 60 (A)). Here, a low-concentration impurity element that imparts n-type to the region 110813 with the conductive film 110842 as a mask is selectively introduced, and a low-concentration impurity element that imparts p-type to the region 110812 with the conductive film 110840 as a mask is selected. Introduce.
Phosphorus (P), arsenic (As), and the like can be used as the impurity element that imparts the n-type. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element that imparts the p-type. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, the sidewall 110854 in contact with the side surface of the conductive film 110840 and 110842
To form. Specifically, a film containing an inorganic material of silicon, an oxide of silicon, or a nitride of silicon, or a film containing an organic material such as an organic resin is single-layered or laminated by a plasma CVD method, a sputtering method, or the like. Form. Then, the insulating film can be selectively etched by anisotropic etching mainly in the vertical direction to be formed so as to be in contact with the side surface of the conductive film 110840 and 110842. The sidewall 110854 is LDD (Light).
It is used as a mask for doping when forming a ly Doped drain) region. Here, the sidewall 110854 is formed so as to be in contact with the insulating film formed below the conductive film 110840 and 110842 and the side surface of the floating gate electrode.

Subsequently, by introducing an impurity element into the regions 110812 and 110813 of the substrate 110800 using the sidewall 110854 and the conductive film 110840 and 110842 as masks, an impurity region that functions as a source or drain region is formed (FIG. 60 (B).
)reference). Here, the sidewall 11085 is located in the area 110813 of the substrate 110800.
4 and an impurity element that imparts a high concentration of n-type are introduced using the conductive film 110842 as a mask, and an impurity element that imparts a high concentration of p-type is introduced into the region 110812 using the sidewall 110854 and the conductive film 110840 as a mask.

As a result, the impurity region 110858 forming the source or drain region, the low-concentration impurity region 110860 forming the LDD region, and the channel forming region 110856 are formed in the region 110812 of the substrate 110800. Then, the area 110 of the substrate 110800
In 813, an impurity region 110864 forming a source or drain region, a low-concentration impurity region 110866 forming an LDD region, and a channel forming region 110862 are formed.

Here, an example of forming an LDD region using a sidewall is shown, but the present invention is not limited to this. The LDD region may be formed by using a mask or the like without using the sidewall, or the LDD region may not be formed. When the LDD region is not formed, the manufacturing process can be simplified, so that the manufacturing cost can be reduced.

Here, the substrate 1 is in a region that does not overlap with the conductive film 110840 and 110842.
Impurity elements are introduced with the surface of 10800 exposed. Therefore, the substrate 11
Channel formation regions 11 formed in regions 110812 and 110913 of 0800, respectively.
0856 and 110862 can be formed in a self-aligned manner by the conductive film 110840 and 110842.

Next, a second insulating film 110877 is formed so as to cover the insulating film, the conductive film, and the like provided in the regions 110812 and 11083 of the substrate 110800, and the opening 110878 is formed in the insulating film 110877 (FIG. 60 (C). )reference).

The second insulating film 110877 is made of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, Silicon Nitride (SiNx), Silicon Nitride (SiOxNy) (x> y), Silicon Nitride (S)
Insulating film with oxygen or nitrogen such as iNxOy) (x> y), carbon-containing film such as DLC (diamond-like carbon), organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic or siloxane It can be provided in a single layer or laminated structure made of a siloxane material such as a resin. The siloxane material is S
Corresponds to a material containing an i-O-Si bond. Siloxane is silicon (Si) and oxygen (O)
The skeletal structure is constructed by combining with. As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent.

Next, a conductive film 110880 is formed in the opening 110878 using the CVD method, and the conductive film 110882a is formed on the insulating film 110877 so as to be electrically connected to the conductive film 110880.
~ 110882d are selectively formed (see FIG. 60 (D)).

The conductive films 110880, 110882a to 110882d are made of aluminum (Al), tungsten (W), titanium (Ti), tantalum (Al), tungsten (W), titanium (Ti), tantalum (Al), tungsten (W), titanium (Ti), tantalum (Al), tungsten (W), titanium (Ti), tantalum (Al), tungsten (W), titanium (Ti), tantalum (Al), tungsten (W), titanium (Ti), tantalum (Al)
Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au)
), Silver (Ag), Manganese (Mn), Neodymium (Nd), Carbon (C), Silicon (Si)
), Or an alloy material or compound material containing these elements as the main components, formed in a single layer or in a laminated manner. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. Conductive film 110880, 110
882a to 110882d are, for example, a barrier membrane and aluminum silicon (Al-Si).
It is preferable to adopt a laminated structure of a film and a barrier film, or a laminated structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (TiN) film, and a barrier film. The barrier membrane is titanium,
It corresponds to a thin film composed of titanium nitride, molybdenum, or molybdenum nitride. Since aluminum and aluminum silicon have low resistance values and are inexpensive, they are most suitable as materials for forming the conductive film 110880. For example, if the upper and lower barrier layers are provided, it is possible to prevent the generation of hilok of aluminum or aluminum silicon. For example, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, this natural oxide film is reduced, which is good as a crystalline semiconductor film. You can make contact. Here, the conductive film 110880 is made of tungsten (W) by the CVD method.
) Can be formed by selective growth.

Through the above steps, a p-type transistor formed in the region 110812 of the substrate 110800 and an n-type transistor formed in the region 110813 can be obtained.

It should be added that the structure of the transistor constituting the transistor of the present invention is not limited to the structure shown in the figure. For example, a transistor structure having a structure such as an inverted stagger structure or a fin FET structure can be adopted. The finFET structure is suitable because it can suppress the short-channel effect associated with the miniaturization of the transistor size.

So far, the structure of the transistor and the method of manufacturing the transistor have been described. here,
Wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium ( Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag)
, Copper (Cu), Magnesium (Mg), Scandium (Sc), Cobalt (C)
o), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn)
), One or more elements selected from the group composed of oxygen (O), or compounds and alloy materials (for example, indium zinc oxide) containing one or more elements selected from the above group. Material (ITO), indium zinc oxide (IZO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO), tin cadmium oxide (CTO)
), Aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag), molybdenum niobium (Mo-Nb), etc.). Alternatively, it is desirable that the wiring, electrodes, conductive layer, conductive film, terminals, etc. are formed with a substance or the like in which these compounds are combined. Alternatively, a compound of silicon with one or more elements selected from the above group (sulfonyl) (eg, aluminum silicon, molybdenum silicon, nickel silicide, etc.)
, It is desirable to have one or more elements selected from the above group and a compound of nitrogen (for example, titanium nitride, tantalum nitride, molybdenum nitride, etc.).

In addition, silicon (Si) may contain n-type impurities (phosphorus and the like) or p-type impurities (boron and the like). When silicon contains impurities, the conductivity can be improved and the behavior similar to that of a normal conductor can be achieved. Therefore, it becomes easy to use as wiring, electrodes, and the like.

As the silicon, silicon having various crystallinities such as single crystal, polycrystalline (polysilicon), and microcrystal (microcrystal silicon) can be used. Alternatively, as silicon, silicon having no crystallinity such as amorphous (amorphous silicon) can be used. By using single crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers,
The resistance of the conductive film, terminals, etc. can be reduced. By using amorphous silicon or microcrystalline silicon, wiring or the like can be formed in a simple process.

Since aluminum or silver has high conductivity, signal delay can be reduced. Further, since it is easy to etch, it is easy to pattern and fine processing can be performed.

Since copper has high conductivity, signal delay can be reduced. When copper is used, it is desirable to have a laminated structure in order to improve adhesion.

Molybdenum or titanium is desirable because it has advantages such as no defects even when it comes into contact with an oxide semiconductor (ITO, IZO, etc.) or silicon, easy etching, and high heat resistance.

Tungsten is desirable because it has advantages such as high heat resistance.

Neodymium is desirable because it has advantages such as high heat resistance. In particular, when an alloy of neodymium and aluminum is used, heat resistance is improved and aluminum is less likely to chill.

It should be noted that silicon is desirable because it has advantages such as being able to be formed at the same time as the semiconductor layer of the transistor and having high heat resistance.

In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S)
Since nO) and tin oxide cadmium (CTO) have translucency, they can be used in a portion that transmits light. For example, it can be used as a pixel electrode or a common electrode.

IZO is desirable because it is easy to etch and process. It is unlikely that IZO will leave a residue when etched. Therefore, when IZO is used as the pixel electrode, it is possible to reduce the occurrence of defects (short circuit, orientation disorder, etc.) in the liquid crystal element and the light emitting element.

The wiring, electrodes, conductive layer, conductive film, terminals, vias, plugs, etc. may have a single-layer structure.
It may have a multi-layer structure. By adopting a single-layer structure, the manufacturing process of wiring, electrodes, conductive layers, conductive films, terminals and the like can be simplified, the number of process days can be reduced, and the cost can be reduced. Alternatively, by forming a multi-layer structure, it is possible to reduce the disadvantages and form wirings, electrodes, etc. with good performance while making the best use of the advantages of each material.
For example, by including a low resistance material (aluminum or the like) in the multilayer structure, it is possible to reduce the resistance of the wiring. As another example, by forming a laminated structure in which a low heat resistant material is sandwiched between high heat resistant materials, it is possible to increase the heat resistance of wiring, electrodes, etc. while taking advantage of the low heat resistant material. You can. For example, it is desirable to have a laminated structure in which a layer containing aluminum is sandwiched between layers containing molybdenum, titanium, neodymium, and the like.

Here, when the wiring, electrodes, etc. are in direct contact with each other, they may adversely affect each other. For example, one of the wirings and electrodes may enter the material such as the other wiring and electrodes and change the properties, so that the original purpose cannot be achieved. As another example, when forming or manufacturing a high resistance portion, a problem may occur and it may not be possible to manufacture normally. In such a case, it is preferable to sandwich or cover the material that easily reacts due to the laminated structure with the material that does not react easily. For example, when connecting ITO and aluminum, it is desirable to sandwich a titanium, molybdenum, or neodymium alloy between ITO and aluminum. As another example, when connecting silicon and aluminum, it is desirable to sandwich a titanium, molybdenum, or neodymium alloy between ITO and aluminum.

The wiring means that the conductor is arranged. It may extend linearly, or it may be arranged short without extending. Therefore, the electrodes are included in the wiring.

In addition, carbon nanotubes may be used as wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, and the like. Further, since the carbon nanotube has a translucent property, it can be used for a portion that transmits light. For example, it can be used as a pixel electrode or a common electrode.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 4)
In the present embodiment, the configuration of the display device will be described.

The configuration of the display device will be described with reference to FIG. 61 (A). FIG. 61A is a top view of the display device.

Pixel unit 170101, scanning line side input terminal 170103 and signal line side input terminal 170104
Is formed on the substrate 170100, a scanning line extends in the row direction from the scanning line side input terminal 170103 and is formed on the substrate 170100, and a signal line extends in the column direction from the signal line side input terminal 170104. It is formed on 170100. The pixels 170102 are arranged in a matrix at the intersection of the scanning line and the signal line in the pixel portion 170101.

The scanning line side input terminals 170103 are formed on both sides of the substrate 170100 in the row direction.
The scanning lines extending from one scanning line side input terminal 170103 and the scanning lines extending from the other scanning line side input terminal 170103 are alternately formed. In this case, pixel 1
Since the 70102 can be arranged at a high density, a high-definition display device can be obtained. However, the present invention is not limited to this, and the scanning line side input terminal 170103 may be formed in only one of the row directions of the substrate 170100. In this case, the frame of the display device can be reduced. The area of the pixel unit 170101 can be expanded. As another example, a scanning line extending from one scanning line side input terminal 170103 and the other scanning line side input terminal 170103.
It may be common with the scanning line extending from. In this case, it is suitable for a display device having a large load of scanning lines, such as a large display device. The signal is input to the scanning line from the external drive circuit via the scanning line side input terminal 170103.

The signal line side input terminal 170104 is formed in one of the row directions of the substrate 170100.
In this case, the frame of the display device can be reduced. The area of the pixel unit 170101 can be expanded. However, the present invention is not limited to this, and the signal line side input terminals 170104 may be formed on both sides of the substrate 170100 in the row direction. In this case, the pixels 170102 can be arranged at a high density. The signal is sent from the external drive circuit to the signal line side input terminal 1.
It is input to the scanning line via 70104.

Pixel 170102 has a switching element and a pixel electrode. In each of the pixels 170102, the first terminal of the switching element is connected to the signal line, and the second terminal of the switching element is connected to the pixel electrode. Then, the on and off of the switching element is controlled by the scanning line. However, the present invention is not limited to this, and various configurations can be used.
For example, pixel 170102 may have a capacitive element. In this case, the capacitance wire is used as the substrate 1.
It is desirable to form on 70100. As another example, pixel 170102 may have a current source such as a drive transistor. In this case, it is desirable to form the power supply line on the substrate 170100.

The substrate 170100 includes a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, and a cloth substrate (natural fibers (silk, silk)).
Cotton, linen), synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates,
A stainless steel substrate, a substrate having a stainless steel still foil, or the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. However, the present invention is not limited to this, and various things can be used.

The switching element included in the pixel 170102 includes a transistor (for example, a bipolar transistor, a MOS transistor, etc.), a diode (for example, a PN diode, a PIN diode, a Schottky diode, and a MIM (Metal Insulato)).
r Metal diode, MIS (Metal Insulator Semico)
nductor) diode, diode-connected transistor, etc.), thyristor, etc. can be used. However, the present invention is not limited to this, and various things can be used. When a MOS transistor is used as the switching element of the pixel 170102, the gate electrode is connected to the scanning line, the first terminal is connected to the signal line, and the second terminal is connected to the pixel electrode.

Up to this point, the case where a signal is input by an external drive circuit has been described. However, the present invention is not limited to this, and the IC chip can be mounted on the display device.

For example, as shown in FIG. 62 (A), the IC chip 170201 can be mounted on the substrate 170100 by the COG (Chip on Glass) method. In this case, I
Since the C chip 170201 can be inspected before being mounted on the substrate 170100, the yield of the display device can be improved. Reliability can be increased. It should be noted that the common reference numerals are used for the parts common to the configuration of FIG. 61 (A), and the description thereof will be omitted.

As another example, as shown in FIG. 62 (B), TAB (Tape Automated B)
The IC chip 170201 is attached to the FPC (Flexible P) by the on) method.
It can be implemented in a lined Circuit) 170200. In this case, IC
Since the chip 170201 can be inspected before being mounted on the FPC 170200, the yield of the display device can be improved. Reliability can be increased. It should be noted that the common reference numerals are used for the parts common to the configuration of FIG. 61 (A), and the description thereof will be omitted.

Here, not only the IC chip is mounted on the board 170100, but also the drive circuit is mounted on the board 1701.
It can be formed on 00.

For example, as shown in FIG. 61 (B), the scanning line drive circuit 170105 can be formed on the substrate 170100. In this case, the cost can be reduced by reducing the number of parts. Reliability can be improved by reducing the number of connection points with circuit components. Since the scanning line driving circuit 170105 has a low driving frequency, the scanning line driving circuit 170105 can be easily formed by using amorphous silicon or microcrystalline silicon as the semiconductor layer of the transistor. An IC chip for outputting a signal to the signal line may be mounted on the substrate 170100 by the COG method. Alternatively, an FPC on which an IC chip for outputting a signal to a signal line is mounted by a TAB method may be arranged on the substrate 170100. The scanning line drive circuit 170105
The IC chip for controlling the above may be mounted on the substrate 170100 by the COG method. Alternatively, F in which an IC chip for controlling the scanning line drive circuit 170105 is mounted by the TAB method.
The PC may be arranged on the substrate 170100. It should be noted that the common reference numerals are used for the parts common to the configuration of FIG. 61 (A), and the description thereof will be omitted.

As another example, as shown in FIG. 61 (C), the scanning line driving circuit 170105 and the signal line driving circuit 170106 can be formed on the substrate 170100. Therefore, it is possible to reduce the cost by reducing the number of parts. Reliability can be improved by reducing the number of connection points with circuit components. An IC chip for controlling the scanning line drive circuit 170105 may be mounted on the substrate 170100 by the COG method. Alternatively, the scanning line drive circuit 17
An FPC on which an IC chip for controlling 0105 is mounted by the TAB method is mounted on the substrate 170100.
May be placed in. Substrate 17 is an IC chip for controlling the signal line drive circuit 170106.
It may be mounted on 0100 by the COG method. Alternatively, an FPC on which an IC chip for controlling the signal line drive circuit 170106 is mounted by the TAB method may be arranged on the substrate 170100. It should be noted that the common reference numerals are used for the parts common to the configuration of FIG. 61 (A), and the description thereof will be omitted.

Next, the configuration of another display device will be described with reference to FIG. 63. Specifically, a display device having a TFT substrate, a counter substrate, and a display layer sandwiched between the TFT substrate and the counter substrate will be described. FIG. 63 is a top view of the display device.

A pixel unit 170301, a scanning line driving circuit 170302a, a scanning line driving circuit 170302b, and a signal line driving circuit 170303 are formed on the substrate 170300. Then, these pixel portions 170301, the scanning line drive circuit 170302a, and the scanning line drive circuit 170302
b and the signal line drive circuit 170303 are formed on the substrate 170300 by the sealing material 170321.
It is sealed between the substrate 170310 and the substrate 170310.

Further, the FPC 107320 is arranged on the substrate 170300. Then, the IC chip 107321 is mounted on the FPC170320 by the TAB method.

A plurality of pixels are arranged in a matrix in the pixel unit 170301. Then, the scanning line extends from the scanning line driving circuit 170302a in the row direction and is formed on the substrate 170300. A scanning line extends in the row direction from the scanning line driving circuit 170302b and is formed on the substrate 170300. The signal line extends from the signal line drive circuit 170303 in the row direction to the substrate 17
It is formed on 0300.

The scanning line drive circuit 170302a is formed on one side of the substrate 170300 in the row direction, and the scanning line drive circuit 170302b is formed on the other side of the substrate 170300 in the row direction. The scanning lines extending from the scanning line driving circuit 170302a and the scanning lines extending from the scanning line driving circuit 170302b are alternately formed. Therefore, a high-definition display device can be obtained. However, the present invention is not limited to this, and only one of the scanning line driving circuit 170302a and the scanning line driving circuit 170302b may be formed on the substrate 170300. In this case, the frame of the display device can be reduced. The area of the pixel unit 170301 can be expanded. As another example, the scanning line extending from the scanning line driving circuit 170302a and the scanning line extending from the scanning line driving circuit 170302b may be common. In this case, it is suitable for a display device having a large load of scanning lines, such as a large display device.

The signal line drive circuit 170303 is formed in one of the row directions of the substrate 170300. Therefore, the frame of the display device can be reduced. The area of the pixel unit 170301 can be expanded. However, the present invention is not limited to this, and the signal line drive circuit 170303 is mounted on the substrate 17.
It may be formed on both sides in the row direction on 0300. In this case, a high-definition display device can be obtained.

The substrate 170300 includes a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, and a cloth substrate (natural fibers (silk, silk)).
Cotton, linen), synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates,
A stainless steel substrate, a substrate having a stainless steel still foil, or the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. However, the present invention is not limited to this, and various things can be used.

The switching elements of the display device include transistors (for example, bipolar transistors, MOS transistors, etc.) and diodes (for example, PN diodes, PINs).
Diode, Schottky diode, MIM (Metal Insulator Me)
tal) Diode, MIS (Metal Insulator Semiconduc)
tor) Diodes, diode-connected transistors, etc.), thyristors, etc. can be used. However, the present invention is not limited to this, and various things can be used.

Up to this point, the case where the drive circuit is formed on the same substrate as the pixel portion has been described. However, the present invention is not limited to this, and another substrate on which a part or all of the drive circuit is formed may be used as an IC chip and mounted on the substrate on which the pixel portion is formed.

For example, as shown in FIG. 64 (A), the IC chip 170401 is used instead of the signal line drive circuit.
Can be mounted on the substrate 170300 by the COG method. In this case, the increase in power consumption can be prevented by mounting the IC chip 170401 on the substrate 170300 by the COG method instead of the signal line drive circuit. This is because the signal line drive circuit has a high drive frequency and therefore consumes a large amount of power. Since the IC chip 170401 can be inspected before being mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be increased. Since the scanning line driving circuit 170302a and the scanning line driving circuit 170302b have low drive frequencies, the scanning line driving circuit 170302a and the scanning line driving circuit 170302b can be easily formed by using non-crystalline silicon or microcrystalline silicon as the semiconductor layer of the transistor. Can be done. Therefore, a display device can be manufactured using a large substrate. It should be noted that the common reference numerals are used for the parts common to the configuration of FIG. 63, and the description thereof will be omitted.

As another example, as shown in FIG. 64 (B), the IC chip 170 is used instead of the signal line drive circuit.
401 is mounted on the board 170300 by the COG method, the IC chip 170501a is mounted on the board 170300 by the COG method instead of the scanning line drive circuit 170302a, and the IC chip 170501b is mounted on the board 170300 by the COG method instead of the scanning line drive circuit 170302b. It may be implemented. In this case, since the IC chip 170401, the IC chip 170501a and the IC chip 170501b can be inspected before being mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be increased. Board 170300
Amorphous silicon or microcrystalline silicon can be easily used as the semiconductor layer of the transistor formed in. Therefore, a display device can be manufactured using a large substrate. It should be noted that the common reference numerals are used for the parts common to the configuration of FIG. 63, and the description thereof will be omitted.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be part) described in each figure of the present embodiment is applied, combined, or replaced with respect to the content (which may be part) described in the figure of another embodiment. You can do such things freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 5)
In the present embodiment, the operation of the display device will be described.

FIG. 65 is a diagram showing a configuration example of the display device.

The display device 180100 includes a pixel unit 180101, a signal line drive circuit 180103, and a scanning line drive circuit 180104. A plurality of signal lines S1 to Sm are arranged in the pixel unit 180101 so as to extend in the row direction from the signal line drive circuit 180103. Pixel part 180101
A plurality of scanning lines G1 to Gn are arranged so as to extend in the row direction from the scanning line driving circuit 180104. Pixels 180102 are arranged in a matrix at the intersections of the plurality of signal lines S1 to Sm and the plurality of scanning lines G1 to Gn, respectively.

The signal line drive circuit 180103 has a function of outputting signals to each of the signal lines S1 to Sn. This signal may be called a video signal. Scanning line drive circuit 180104
Has a function of outputting a signal to each of the scanning lines G1 to Gm. This signal may be called a scanning signal.

The pixel 180102 has at least a switching element connected to a signal line. The switching element is controlled to be turned on and off by the potential of the scanning line (scanning signal). Then, the pixel 180102 is selected when the switching element is on, and the pixel 180102 is not selected when the switching element is off.

When pixel 180102 is selected (selected state), a video signal is input to pixel 180102 from the signal line. Then, the state of the pixel 180102 (for example, the brightness, the transmittance, the voltage of the holding capacitance, etc.) changes according to the input video signal.

When pixel 180102 is not selected (non-selected state), the video signal is pixel 1801.
Not entered in 02. However, since the pixel 180102 holds the potential corresponding to the video signal input at the time of selection, the pixel 180102 maintains the potential corresponding to the video signal (for example, brightness, transmittance, voltage of holding capacitance, etc.).

The configuration of the display device is not limited to FIG. 65. For example, new wiring (scanning line, signal line, power supply line, capacitance line, common line, etc.) may be added depending on the configuration of the pixel 180102. As another example, circuits having various functions may be added.

FIG. 66 shows an example of a timing chart for explaining the operation of the display device.

The timing chart of FIG. 66 shows a one-frame period corresponding to a period for displaying an image for one screen. The period of one frame is not particularly limited, but it is preferably at least 1/60 second or less so that the viewer does not feel flicker.

In the timing chart of FIG. 66, the scanning line G1 of the first line and the scanning line Gi of the i-th line (scanning line G1) are shown.
1), the timing at which the scanning line Gi + 1 on the i + 1th line and the scanning line Gm on the mth line are selected is shown.

At the same time that the scanning line is selected, the pixel 180102 connected to the scanning line is also selected. For example, when the scanning line Gi on the i-th row is selected, the pixel 180102 connected to the scanning line Gi on the i-th row is also selected.

Each of the scanning lines of the scanning lines G1 to Gm is selected in order from the scanning line G1 of the first line to the scanning line Gm of the mth line (hereinafter, also referred to as scanning). For example, during the period when the scanning line Gi on the i-th line is selected, scanning lines (G1 to Gi-1, Gi + 1 to Gm) other than the scanning line Gi on the i-th line are selected.
) Is not selected. Then, in the next period, the scanning line Gi + 1 on the i + 1 line is selected. The period in which one scanning line is selected is referred to as a one-gate selection period.

Therefore, when a scan line in a row is selected, a plurality of pixels 180 connected to the scan line
A video signal is input to 102 from each of the signal lines G1 and Gm. For example, i
While the scan line Gi of the i-th line is selected, the plurality of pixels 180102 connected to the scan line Gi of the i-th line input arbitrary video signals from their respective signal lines S1 to Sn, respectively.
In this way, the individual plurality of pixels 180102 can be independently controlled by the scanning signal and the video signal.

Next, a case where one gate selection period is divided into a plurality of subgate selection periods will be described.
FIG. 67 shows a timing chart when the one gate selection period is divided into two subgate selection periods (first subgate selection period and second subgate selection period).

It is also possible to divide one gate selection period into three or more subgate selection periods.

The timing chart of FIG. 67 shows a one-frame period corresponding to a period for displaying an image for one screen. The period of one frame is not particularly limited, but it is preferably at least 1/60 second or less so that the viewer does not feel flicker.

One frame is two subframes (first subframe and second subframe).
It is divided into.

In the timing chart of FIG. 67, the scanning lines Gi on the i-th line and the scanning lines Gi + 1, j on the i + 1th line are shown.
The timing at which the scanning line Gj of the line (any one of the scanning lines Gi + 1 to Gm), the scanning line of the j + 1 line, and the scanning line Gj + 1 of the Gj + 1 line are selected is shown.

At the same time that the scanning line is selected, the pixel 180102 connected to the scanning line is also selected. For example, when the scanning line Gi on the i-th row is selected, the pixel 180102 connected to the scanning line Gi on the i-th row is also selected.

Each of the scanning lines G1 to Gm is scanned in order within each subgate selection period. For example, in a certain one-gate selection period, the scan line Gi of the i-th row is selected in the first sub-gate selection period, and the scan line Gj of the j-th row is selected in the second sub-gate selection period.
Then, in the one-gate selection period, it is possible to operate as if two lines of scanning signals were selected at the same time. At this time, separate video signals are input to the signal lines S1 to Sn in the first subgate selection period and the second subgate selection period. Therefore,
A plurality of pixels 180102 connected to the i-th row and a plurality of pixels 1 connected to the j-th row
Separate video signals can be input to the 80102.

Next, a driving method for converting the frame rate of the input image data (also referred to as the input frame rate) and the display frame rate (also referred to as the display frame rate) will be described. The frame rate is the number of frames per second, and the unit is Hz.

In the present embodiment, the input frame rate does not necessarily have to match the display frame rate. When the input frame rate and the display frame rate are different, the frame rate can be converted by a circuit that converts the frame rate of the image data (frame rate conversion circuit). By doing so, even if the input frame rate and the display frame rate are different, it is possible to display at various display frame rates.

When the input frame rate is larger than the display frame rate, it is possible to convert to various display frame rates and display by discarding a part of the input image data.
In this case, since the display frame rate can be reduced, the operating frequency of the drive circuit for display can be reduced, and the power consumption can be reduced. On the other hand, when the input frame rate is smaller than the display frame rate, all or part of the input image data is displayed multiple times, another image is generated from the input image data, and what is the input image data? By using means such as generating an irrelevant image, it is possible to convert to various display frame rates and display the image. In this case, the quality of the moving image can be improved by increasing the display frame rate.

In the present embodiment, a frame rate conversion method when the input frame rate is smaller than the display frame rate will be described in detail. The frame rate conversion method when the input frame rate is larger than the display frame rate can be realized by executing the reverse procedure of the frame rate conversion method when the input frame rate is smaller than the display frame rate. it can.

In the present embodiment, an image displayed at the same frame rate as the input frame rate is referred to as a basic image. On the other hand, an image displayed at a frame rate different from that of the basic image and displayed in order to match the input frame rate and the display frame rate is referred to as an interpolated image. As the basic image, the same image as the input image data can be used. The same image as the basic image can be used as the interpolated image. Further, an image different from the basic image can be created, and the created image can be used as an interpolated image.

When creating an interpolated image, a method of detecting a temporal change (image movement) of the input image data and using an image in these intermediate states as an interpolated image, an image obtained by multiplying the brightness of the basic image by a certain coefficient. Is used as an interpolated image, a plurality of different images are created from the input image data, and the plurality of images are presented in succession in time (one of the plurality of images is used as a basic image, and the image is used as a basic image.
By using the rest as an interpolated image), there is a method of making the observer perceive as if an image corresponding to the input image data is displayed. As a method of creating a plurality of different images from the input image data, there are a method of converting the gamma value of the input image data, a method of dividing the gradation value included in the input image data, and the like.

The image in the intermediate state (intermediate image) is an image obtained by detecting a temporal change (movement of the image) of the input image data and interpolating the detected movement. Obtaining an intermediate image by such a method is called motion compensation.

Next, a specific example of the frame rate conversion method will be described. According to this method, a frame rate conversion of an arbitrary rational number (n / m) times can be realized. Here, n and m are integers of 1 or more. The frame rate conversion method in the present embodiment can be handled separately in the first step and the second step. Here, the first step is a step of converting the frame rate to an arbitrary rational number (n / m) times. Here, a basic image may be used as the interpolated image, or an intermediate image obtained by motion compensation may be used as the interpolated image. In the second step, a plurality of different images (sub-images) are created from the input image data or each image whose frame rate has been converted in the first step, and the plurality of sub-images are continuously connected in time. It is a step for performing the method of displaying. By using the method according to the second step, it is possible to make the human eye perceive the original image as if it were displayed, even though a plurality of different images are actually displayed.

In the frame rate conversion method in the present embodiment, both the first step and the second step may be used, the first step may be omitted, and only the second step may be used. The second step may be omitted and only the first step may be used.

First, as a first step, a frame rate conversion of an arbitrary rational number (n / m) times will be described. (See FIG. 68) In FIG. 68, the horizontal axis represents time, and the vertical axis shows various n and m in different cases. The figure in FIG. 68 represents a schematic view of the displayed image, and represents the timing of display according to the horizontal position thereof. Further, it is assumed that the movement of the image is schematically represented by the points displayed in the figure. However, this is an example for explanation, and the displayed image is not limited to this. This method can be applied to various images.

The period Tin represents the period of the input image data. The cycle of the input image data corresponds to the input frame rate. For example, when the input frame rate is 60 Hz, the period of the input image data is 1/60 second. Similarly, if the input frame rate is 50 Hz,
The period of the input image data is 1/50 second. In this way, the period of the input image data (unit:
Seconds) is the reciprocal of the input frame rate (unit: Hz). Various input frame rates can be used. For example, 24Hz, 50Hz, 60Hz, 70Hz,
48 Hz, 100 Hz, 120 Hz, 140 Hz, etc. can be mentioned. Here, 2
4 Hz is a frame rate used for film movies and the like. 50 Hz is a frame rate used for PAL standard video signals and the like. 60 Hz is a frame rate used for NTSC standard video signals and the like. 70 Hz is a frame rate used for a display input signal of a personal computer or the like. 48Hz, 100Hz, 120Hz,
140 Hz is a frame rate twice these. The frame rate is not limited to twice, and may be various multiples of the frame rate. As described above, according to the method shown in the present embodiment, it is possible to realize the conversion of the frame rate for the input signals of various standards.

The procedure for converting the frame rate of an arbitrary rational number (n / m) times in the first step is as follows.
As step 1, the kth interpolated image with respect to the first basic image (k is an integer of 1 or more; the initial value is 1).
) Is displayed. It is assumed that the display timing of the k-th interpolated image is the time when a period obtained by multiplying the period of the input image data by k (m / n) has elapsed since the first basic image was displayed.
As step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the kth interpolated image is an integer. If it is an integer, the (k (m / n) +1) basic image is displayed at the display timing of the kth interpolated image, and the first step is completed. If it is not an integer, the process proceeds to step 3.
As step 3, an image to be used as the kth interpolated image is determined. Specifically, the coefficient k (m / n) used for determining the display timing of the kth interpolated image is converted into the form of x + y / n. Here, it is assumed that x and y are integers, and y is a number smaller than n. Then, when the kth interpolated image is an intermediate image obtained by motion compensation, the kth interpolated image is the (x + 1) th (x + 1).
) Is an intermediate image obtained as an image corresponding to the movement of the image from the basic image to the (x + 2) basic image multiplied by (y / n). When the kth interpolated image is the same as the basic image, the (x + 1) th basic image can be used. The method of obtaining an intermediate image as an image corresponding to the movement of the image multiplied by (y / n) will be described in detail in another part.
As step 4, the target interpolated image is moved to the next interpolated image. Specifically, the value of k is incremented by 1, and the process returns to step 1.

Next, in the procedure in the first step, the values of n and m will be specifically shown and described in detail.

The mechanism for executing the procedure in the first step may be mounted on the device or may be predetermined at the design stage of the device. If a mechanism for executing the procedure in the first step is implemented in the apparatus, it is possible to switch the driving method so that the optimum operation is performed according to the situation. The situation here means the content of the image data, the environment inside and outside the device (temperature, humidity, atmospheric pressure, light, sound, magnetic field, electric field, radiation dose, etc.)
Includes altitude, acceleration, speed of movement, etc.), user settings, software version, etc. On the other hand, if the mechanism for executing the procedure in the first step is predetermined at the device design stage, the optimum drive circuit can be used for each drive method, and the mechanism is further determined. As a result, it can be expected that the manufacturing cost will be reduced due to the mass production effect.

When n = 1, m = 1, that is, the conversion ratio (n / m) is 1 (at the location of n = 1, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolated image with respect to the first basic image is determined. The display timing of the first interpolated image is such that the period of the input image data is k (m) after the first basic image is displayed.
/ N) This is the time when the period of multiplying, that is, multiplying by 1 has elapsed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the first interpolated image, the second (k (m / n) + 1), that is, the second basic image is displayed, and the first step is completed.

That is, when the conversion ratio is 1, the kth image is a basic image, the k + 1th image is a basic image, and the image display cycle is one times the cycle of the input image data. To do.

As a concrete expression, when the conversion ratio is 1 (n / m = 1),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
It is a driving method of a display device that sequentially displays the k + 1th image and the image at intervals equal to the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1th image is displayed according to the i + 1 image data.

Here, when the conversion ratio is 1, the frame rate conversion circuit can be omitted, which has an advantage that the manufacturing cost can be reduced. Further, when the conversion ratio is 1, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 1. Further, when the conversion ratio is 1, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 1.

When n = 2, m = 1, that is, the conversion ratio (n / m) is 2 (at the location of n = 2, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolated image with respect to the first basic image is determined. The display timing of the first interpolated image is such that the period of the input image data is k (m) after the first basic image is displayed.
It is the time when the period of / n) times, that is, 1/2 times has passed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 1/2, it is not an integer. Therefore, the process proceeds to step 3.

In step 3, an image to be used as the first interpolated image is determined. Therefore, the coefficient 1/2 is x
Convert to + y / n form. When the coefficient is 1/2, x = 0 and y = 1. Then, when the first interpolated image is an intermediate image obtained by motion compensation, the first interpolated image is the first (x +).
1) That is, it is an intermediate image obtained as an image corresponding to the movement of the image from the first basic image to the second (x + 2), that is, the second basic image, which is multiplied by y / n, that is, 1/2. 1st
When the interpolated image of is the same as the basic image, the first (x + 1), that is, the first basic image can be used.

By the procedure up to this point, the display timing of the first interpolated image and the image to be displayed as the first interpolated image can be determined. Next, in step 4, the target interpolated image is moved from the first interpolated image to the second interpolated image. That is, k is changed from 1 to 2, and the process returns to step 1.

When k = 2, in step 1, the display timing of the second interpolated image with respect to the first basic image is determined. The display timing of the second interpolated image is a time when a period of k (m / n) times, that is, 1 times the cycle of the input image data has elapsed since the first basic image was displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the second interpolated image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the second interpolated image, the second (k (m / n) + 1), that is, the second basic image is displayed, and the first step is completed.

That is, when the conversion ratio is 2 (n / m = 2),
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2th image is a basic image, and the image display cycle is 1/2 times the cycle of the input image data.

As a concrete expression, when the conversion ratio is 2 (n / m = 2),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
It is a driving method of a display device that sequentially displays the k + 2 image and the image at an interval of 1/2 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 1/2.
The k + 2 image is displayed according to the i + 1 image data.

As yet another concrete expression, when the conversion ratio is 2 (n / m = 2),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
It is a driving method of a display device that sequentially displays the k + 2 image and the image at an interval of 1/2 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i + 1 image data.

Specifically, when the conversion ratio is 2, it is also called double speed drive or simply double speed drive.
For example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (
120Hz drive). Then, the image is displayed twice in succession for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Further, when the display device is an active matrix type liquid crystal display device,
It brings about a particularly remarkable image quality improvement effect. This is related to the problem of insufficient write voltage due to so-called dynamic capacitance, in which the capacitance of the liquid crystal element fluctuates depending on the applied voltage. That is, by making the display frame rate larger than the input frame rate, the frequency of image data writing operations can be increased, so that obstacles such as trailing of moving images and afterimages caused by insufficient writing voltage due to dynamic capacitance can be reduced. be able to. Further, it is also effective to combine the AC drive and the 120 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 120 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye.

When n = 3, m = 1, that is, the conversion ratio (n / m) is 3 (at the location of n = 3, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolated image with respect to the first basic image is determined. The display timing of the first interpolated image is such that the period of the input image data is k (m) after the first basic image is displayed.
It is the time when the period of / n) times, that is, 1/3 times has passed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 1/3, it is not an integer. Therefore, the process proceeds to step 3.

In step 3, an image to be used as the first interpolated image is determined. Therefore, the coefficient 1/3 is x
Convert to + y / n form. When the coefficient is 1/3, x = 0 and y = 1. Then, when the first interpolated image is an intermediate image obtained by motion compensation, the first interpolated image is the first (x +).
1) That is, the intermediate image obtained as an image corresponding to the movement of the image from the first basic image to the second (x + 2), that is, the second basic image is multiplied by y / n, that is, 1/3 times. 1st
When the interpolated image of is the same as the basic image, the first (x + 1), that is, the first basic image can be used.

By the procedure up to this point, the display timing of the first interpolated image and the image to be displayed as the first interpolated image can be determined. Next, in step 4, the target interpolated image is moved from the first interpolated image to the second interpolated image. That is, k is changed from 1 to 2, and the process returns to step 1.

When k = 2, in step 1, the display timing of the second interpolated image with respect to the first basic image is determined. The display timing of the second interpolated image is a time when a period of k (m / n) times, that is, 2/3 times the cycle of the input image data has elapsed since the first basic image was displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the second interpolated image is an integer. Here, since the coefficient k (m / n) is 2/3, it is not an integer. Therefore, the process proceeds to step 3.

In step 3, an image to be used as the second interpolated image is determined. Therefore, the coefficient 2/3 is x
Convert to + y / n form. In the case of the coefficient 2/3, x = 0 and y = 2. Then, when the second interpolated image is an intermediate image obtained by motion compensation, the second interpolated image is the second (x +).
1) That is, the intermediate image obtained as an image corresponding to the movement of the image from the first basic image to the second (x + 2), that is, the second basic image is multiplied by y / n, that is, 2/3 times. Second
When the interpolated image of is the same as the basic image, the first (x + 1), that is, the first basic image can be used.

By the procedure up to this point, the display timing of the second interpolated image and the image to be displayed as the second interpolated image can be determined. Next, in step 4, the target interpolated image is moved from the second interpolated image to the third interpolated image. That is, k is changed from 2 to 3, and the process returns to step 1.

When k = 3, in step 1, the display timing of the third interpolated image with respect to the first basic image is determined. The display timing of the third interpolated image is a time when a period of k (m / n) times, that is, 1 times the cycle of the input image data has elapsed since the first basic image was displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the third interpolated image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the third interpolated image, the third (k (m / n) + 1), that is, the second basic image is displayed, and the first step is completed.

That is, when the conversion ratio is 3 (n / m = 3),
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2nd image is an interpolated image,
The k + 3th image is a basic image, and the image display cycle is 1/3 times the cycle of the input image data.

As a concrete expression, when the conversion ratio is 3 (n / m = 3),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
It is a driving method of a display device that sequentially displays the k + 3 image and the k + 3 image at an interval of 1/3 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 1/3.
The k + 2 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image to the i + 1 image by 2/3.
The k + 3 image is displayed according to the i + 1 image data.

As yet another concrete expression, when the conversion ratio is 3 (n / m = 3),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
It is a driving method of a display device that sequentially displays the k + 3 image and the k + 3 image at an interval of 1/3 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i-th image data, and is displayed.
The k + 3 image is displayed according to the i + 1 image data.

Here, when the conversion ratio is 3, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3. Further, when the conversion ratio is 3, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 3.

Specifically, when the conversion ratio is 3, it is also called triple speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, the image is displayed three times in succession for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Furthermore, the AC drive of the liquid crystal display device and 180Hz
It is also effective to combine drives. That is, the drive frequency of the liquid crystal display device is 180H.
While setting z, the frequency of AC drive is an integral multiple or an integral fraction of that (for example, 45 Hz, 9).
By setting it to 0 Hz, 180 Hz, 360 Hz, etc.), the flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye.

n = 3, m = 2, that is, the conversion ratio (n / m) is 3/2 (at n = 3, m = 2 in FIG. 68).
In the case of, the operation in the first step is as follows. First, when k = 1, step 1
Then, the display timing of the first interpolated image with respect to the first basic image is determined. The display timing of the first interpolated image is such that the period of the input image data is k after the first basic image is displayed.
This is the time when the period of (m / n) times, that is, 2/3 times has passed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 2/3, it is not an integer. Therefore, the process proceeds to step 3.

In step 3, an image to be used as the first interpolated image is determined. Therefore, the coefficient 2/3 is x
Convert to + y / n form. In the case of the coefficient 2/3, x = 0 and y = 2. Then, when the first interpolated image is an intermediate image obtained by motion compensation, the first interpolated image is the first (x +).
1) That is, the intermediate image obtained as an image corresponding to the movement of the image from the first basic image to the second (x + 2), that is, the second basic image is multiplied by y / n, that is, 2/3 times. 1st
When the interpolated image of is the same as the basic image, the first (x + 1), that is, the first basic image can be used.

By the procedure up to this point, the display timing of the first interpolated image and the image to be displayed as the first interpolated image can be determined. Next, in step 4, the target interpolated image is moved from the first interpolated image to the second interpolated image. That is, k is changed from 1 to 2, and the process returns to step 1.

When k = 2, in step 1, the display timing of the second interpolated image with respect to the first basic image is determined. The display timing of the second interpolated image is a time when a period of k (m / n) times, that is, 4/3 times the cycle of the input image data has elapsed since the first basic image was displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the second interpolated image is an integer. Here, since the coefficient k (m / n) is 4/3, it is not an integer. Therefore, the process proceeds to step 3.

In step 3, an image to be used as the second interpolated image is determined. Therefore, the coefficient 4/3 is x
Convert to + y / n form. In the case of the coefficient 4/3, x = 1 and y = 1. Then, when the second interpolated image is an intermediate image obtained by motion compensation, the second interpolated image is the second (x +).
1) That is, an intermediate image obtained as an image corresponding to the movement of the image from the second basic image to the third (x + 2), that is, the third basic image is multiplied by y / n, that is, 1/3 times. Second
When the interpolated image of is the same as the basic image, the first (x + 1), that is, the second basic image can be used.

By the procedure up to this point, the display timing of the second interpolated image and the image to be displayed as the second interpolated image can be determined. Next, in step 4, the target interpolated image is moved from the second interpolated image to the third interpolated image. That is, k is changed from 2 to 3, and the process returns to step 1.

When k = 3, in step 1, the display timing of the third interpolated image with respect to the first basic image is determined. The display timing of the third interpolated image is a time when a period of k (m / n) times, that is, twice the period of the input image data has elapsed since the first basic image was displayed.

Next, in step 2, it is determined whether or not the coefficient k (m / n) used for determining the display timing of the third interpolated image is an integer. Here, since the coefficient k (m / n) is 2, it is an integer. Therefore, at the display timing of the third interpolated image, the third (k (m / n) +1), that is, the third basic image is displayed, and the first step is completed.

That is, when the conversion ratio is 3/2 (n / m = 3/2),
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2nd image is an interpolated image,
The k + 3th image is a basic image, and the image display cycle is 2/3 times the cycle of the input image data.

As a specific expression, when the conversion ratio is 3/2 (n / m = 3/2),
The i-th (i is a positive integer) image data and
Image data of the i + 1 and
The i + 2 image data and the second image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
It is a driving method of a display device that sequentially displays the k + 3 image and the k + 3 image at an interval of 2/3 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 2/3.
The k + 2 image is 1/3 of the movement from the i + 1 image to the i + 2 image.
It is displayed according to the image data corresponding to the doubled movement,
The k + 3 image is displayed according to the i + 2 image data.

As yet another concrete expression, when the conversion ratio is 3/2 (n / m = 3/2),
The i-th (i is a positive integer) image data and
Image data of the i + 1 and
The i + 2 image data and the second image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
It is a driving method of a display device that sequentially displays the k + 3 image and the k + 3 image at an interval of 2/3 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i + 1 image data, and is displayed.
The k + 3 image is displayed according to the i + 2 image data.

Here, when the conversion ratio is 3/2, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3/2. Further, when the conversion ratio is 3/2, the conversion ratio is 3 /.
It has the advantage that power consumption and manufacturing cost can be reduced as compared with the case where it is larger than 2.

Specifically, when the conversion ratio is 3/2, it is also called 3/2 times speed drive or 1.5 times speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 90.
It is Hz (90 Hz drive). Then, the images are displayed three times in succession for the two input images. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. In particular, compared with a drive method having a large drive frequency such as 120 Hz drive (double speed drive) or 180 Hz drive (3 times speed drive), the operating frequency of the circuit for which an intermediate image is obtained can be reduced by motion compensation, so that an inexpensive circuit can be used. , Manufacturing cost and power consumption can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that the trailing of the moving image can be avoided.
It brings about a particularly remarkable image quality improvement effect for obstacles such as afterimages. Further, it is also effective to combine the AC drive and the 90 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 90 Hz, the frequency of AC drive is an integral multiple or a fraction of that (for example, 3).
By setting it to 0 Hz, 45 Hz, 90 Hz, 180 Hz, etc.), the flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye.

For positive integers n and m other than the above, the details of the procedure are omitted, but the conversion ratio can be set as an arbitrary rational number (n / m) by following the frame rate conversion procedure in the first step. it can. Of the combinations of positive integers n and m, the conversion ratio (n /
Combinations in which m) can be reduced can be treated in the same manner as the conversion ratio after reduction.

For example, when n = 4, m = 1, that is, the conversion ratio (n / m) is 4 (at n = 4, m = 1 in FIG. 68),
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2nd image is an interpolated image,
The k + 3th image is an interpolated image,
The k + 4th image is a basic image, and the image display cycle is 1/4 times the cycle of the input image data.

As a more specific expression, when the conversion ratio is 4 (n / m = 4),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
It is a driving method of a display device that sequentially displays the k + 4th image at an interval of 1/4 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 1/4.
The k + 2 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 1/2.
The k + 3 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 3/4.
The k + 4 image is displayed according to the i + 1 image data.

As yet another concrete expression, when the conversion ratio is 4 (n / m = 4),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
It is a driving method of a display device that sequentially displays the k + 4th image at an interval of 1/4 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i-th image data, and is displayed.
The k + 3 image is displayed according to the i-th image data, and is displayed.
The k + 4 image is displayed according to the i + 1 image data.

Here, when the conversion ratio is 4, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4. Further, when the conversion ratio is 4, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 4.

Specifically, when the conversion ratio is 4, it is also called quadruple speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, the image is displayed four times in succession for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. In particular, 120
Compared with driving methods with a small driving frequency such as Hz drive (double speed drive) and 180 Hz drive (3x speed drive), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolated image. The movement can be smoothed, and the quality of the moving image can be significantly improved. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 240 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 240 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 40 Hz, 60 Hz, 120 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye.

Further, for example, n = 4, m = 3, that is, the conversion ratio (n / m) is 4/3 (n = in FIG. 68).
In the case of 4, m = 3)
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2nd image is an interpolated image,
The k + 3th image is an interpolated image,
The k + 4th image is a basic image, and the image display cycle is 3/4 times the cycle of the input image data.

As a more specific expression, when the conversion ratio is 4/3 (n / m = 4/3),
The i-th (i is a positive integer) image data and
Image data of the i + 1 and
The i + 2 image data and
The i + 3 image data and the third image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
It is a driving method of a display device that sequentially displays the k + 4th image at intervals of 3/4 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 3/4.
The k + 2 image halves the movement from the i + 1 image to the i + 2 image.
It is displayed according to the image data corresponding to the doubled movement,
The k + 3 image is 1/4 of the movement from the i + 2 image to the i + 3 image.
It is displayed according to the image data corresponding to the doubled movement,
The k + 4 image is displayed according to the i + 3 image data.

As yet another concrete expression, when the conversion ratio is 4/3 (n / m = 4/3),
The i-th (i is a positive integer) image data and
Image data of the i + 1 and
The i + 2 image data and
The i + 3 image data and the third image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
It is a driving method of a display device that sequentially displays the k + 4th image at intervals of 3/4 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i + 1 image data, and is displayed.
The k + 3 image is displayed according to the i + 2 image data, and is displayed.
The k + 4 image is displayed according to the i + 3 image data.

Here, when the conversion ratio is 4/3, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4/3. Further, when the conversion ratio is 4/3, the conversion ratio is 4/3.
It has the advantage that power consumption and manufacturing cost can be reduced as compared with the case where it is larger than 3.

Specifically, when the conversion ratio is 4/3, it is also called 4/3 times speed drive or 1.25 times speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 8.
It is 0 Hz (80 Hz drive). Then, the images are displayed four times in succession for the three input images. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. In particular, compared with a drive method having a large drive frequency such as 120 Hz drive (double speed drive) or 180 Hz drive (3 times speed drive), the operating frequency of the circuit for which an intermediate image is obtained can be reduced by motion compensation, so that an inexpensive circuit can be used. , Manufacturing cost and power consumption can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 80 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 80 Hz, the frequency of AC drive is an integral multiple or a fraction of that (for example).
By setting 40Hz, 80Hz, 160Hz, 240Hz, etc.), the flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye.

Further, for example, n = 5, m = 1, that is, the conversion ratio (n / m) is 5 (n = 5, in FIG. 68).
In the case of m = 1)
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2nd image is an interpolated image,
The k + 3th image is an interpolated image,
The k + 4th image is an interpolated image,
The k + 5th image is a basic image, and the image display cycle is 1/5 times the cycle of the input image data.

As a more specific expression, when the conversion ratio is 5 (n / m = 5),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
The k + 4th image and
It is a driving method of a display device that sequentially displays the k + 5th image at an interval of 1/5 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 1/5.
The k + 2 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 2/5.
The k + 3 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 3/5.
The k + 4 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 4/5.
The k + 5 image is displayed according to the i + 1 image data.

As yet another concrete expression, when the conversion ratio is 5 (n / m = 5),
The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
The k + 4th image and
It is a driving method of a display device that sequentially displays the k + 5th image at an interval of 1/5 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i-th image data, and is displayed.
The k + 3 image is displayed according to the i-th image data, and is displayed.
The k + 4 image is displayed according to the i-th image data, and is displayed.
The k + 5 image is displayed according to the i + 1 image data.

Here, when the conversion ratio is 5, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5. Further, when the conversion ratio is 5, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5.

Specifically, when the conversion ratio is 5, it is also called 5x speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, the image is displayed five times in succession for one input image. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. In particular, 120
Compared with driving methods with a small driving frequency such as Hz drive (double speed drive) and 180 Hz drive (3x speed drive), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolated image. The movement can be smoothed, and the quality of the moving image can be significantly improved. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 300 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 300 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye.

Further, for example, n = 5, m = 2, that is, the conversion ratio (n / m) is 5/2 (n = in FIG. 68).
In the case of 5, m = 2)
The kth image is a basic image,
The k + 1th image is an interpolated image,
The k + 2nd image is an interpolated image,
The k + 3th image is an interpolated image,
The k + 4th image is an interpolated image,
The k + 5th image is a basic image, and the image display cycle is 1/5 times the cycle of the input image data.

As a more specific expression, when the conversion ratio is 5/2 (n / m = 5/2),
The i-th (i is a positive integer) image data and
Image data of the i + 1 and
The i + 2 image data and the second image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
The k + 4th image and
It is a driving method of a display device that sequentially displays the k + 5th image at an interval of 1/5 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 2/5.
The k + 2 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 4/5.
The k + 3 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i + 1 image data to the i + 2 image data by 1/5.
The k + 4 image is displayed according to the image data corresponding to the movement obtained by multiplying the movement from the i + 1 image data to the i + 2 image data by 3/5.
The k + 5 image is displayed according to the i + 2 image data.

As yet another concrete expression, when the conversion ratio is 5/2 (n / m = 5/2),
The i-th (i is a positive integer) image data and
Image data of the i + 1 and
The i + 2 image data and the second image data are sequentially input as input image data at regular intervals.
The image of the kth (k is a positive integer) and
The first k + 1 image and
The k + 2 image and
The k + 3 image and
The k + 4th image and
It is a driving method of a display device that sequentially displays the k + 5th image at an interval of 1/5 times the cycle of the input image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to the i-th image data, and is displayed.
The k + 2 image is displayed according to the i-th image data, and is displayed.
The k + 3 image is displayed according to the i + 1 image data, and is displayed.
The k + 4 image is displayed according to the i + 1 image data, and is displayed.
The k + 5 image is displayed according to the i + 2 image data.

Here, when the conversion ratio is 5/2, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/2. Further, when the conversion ratio is 5/2, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5.

Specifically, when the conversion ratio is 5, it is also called 5/2 times speed drive or 2.5 times speed drive. For example, if the input frame rate is 60Hz, the display frame rate is 150H.
z (150 Hz drive). Then, the images are displayed five times in succession for the two input images. At this time, when the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. In particular, as compared with a drive method having a small drive frequency such as 120 Hz drive (double speed drive), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolated image, so that the motion of the moving image can be further smoothed. It is possible to significantly improve the quality of moving images. Furthermore, compared to a drive method with a large drive frequency such as 180 Hz drive (3x speed drive), the operating frequency of the circuit that obtains the intermediate image can be reduced by motion compensation, so an inexpensive circuit can be used, and manufacturing costs and power consumption can be reduced. Can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 150 Hz drive of the liquid crystal display device. That is, the drive frequency of the liquid crystal display device is set to 150 Hz.
However, the frequency of AC drive is an integral multiple or a fraction of that (for example, 30 Hz, 50).
By setting Hz, 75 Hz, 150 Hz, etc.), the flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye.

By setting various positive integers n and m in this way, the conversion ratio can be set as an arbitrary rational number (n / m). Although detailed description is omitted, in the range where n is 10 or less,
n = 1, m = 1, that is, conversion ratio (n / m) = 1 (1x speed drive, 60 Hz),
n = 2, m = 1, that is, conversion ratio (n / m) = 2 (double speed drive, 120 Hz),
n = 3, m = 1, that is, conversion ratio (n / m) = 3 (3x speed drive, 180Hz),
n = 3, m = 2, that is, conversion ratio (n / m) = 3/2 (3/2 times speed drive, 90 Hz),
n = 4, m = 1, that is, conversion ratio (n / m) = 4 (4x speed drive, 240Hz),
n = 4, m = 3, that is, conversion ratio (n / m) = 4/3 (4/3 times speed drive, 80 Hz),
n = 5, m = 1, that is, conversion ratio (n / m) = 5/1 (5x speed drive, 300 Hz),
n = 5, m = 2, that is, conversion ratio (n / m) = 5/2 (5/2 times speed drive, 150 Hz),
n = 5, m = 3, that is, conversion ratio (n / m) = 5/3 (5/3 times speed drive, 100 Hz),
n = 5, m = 4, that is, conversion ratio (n / m) = 5/4 (5/4 speed drive, 75 Hz),
n = 6, m = 1, that is, conversion ratio (n / m) = 6 (6x speed drive, 360Hz),
n = 6, m = 5, that is, conversion ratio (n / m) = 6/5 (6/5 times speed drive, 72 Hz),
n = 7, m = 1, that is, conversion ratio (n / m) = 7 (7x speed drive, 420Hz),
n = 7, m = 2, that is, conversion ratio (n / m) = 7/2 (7/2 times speed drive, 210 Hz),
n = 7, m = 3, that is, conversion ratio (n / m) = 7/3 (7/3 times speed drive, 140 Hz),
n = 7, m = 4, that is, conversion ratio (n / m) = 7/4 (7/4 times speed drive, 105 Hz),
n = 7, m = 5, that is, conversion ratio (n / m) = 7/5 (7/5 times speed drive, 84 Hz),
n = 7, m = 6, that is, conversion ratio (n / m) = 7/6 (7/6 times speed drive, 70 Hz),
n = 8, m = 1, that is, conversion ratio (n / m) = 8 (8x speed drive, 480Hz),
n = 8, m = 3, that is, conversion ratio (n / m) = 8/3 (8/3 times speed drive, 160 Hz),
n = 8, m = 5, that is, conversion ratio (n / m) = 8/5 (8/5 times speed drive, 96 Hz),
n = 8, m = 7, that is, conversion ratio (n / m) = 8/7 (8/7 times speed drive, 68.6 Hz)
,
n = 9, m = 1, that is, conversion ratio (n / m) = 9 (9x speed drive, 540Hz),
n = 9, m = 2, that is, conversion ratio (n / m) = 9/2 (9/2 times speed drive, 270 Hz),
n = 9, m = 4, that is, conversion ratio (n / m) = 9/4 (9/4 speed drive, 135 Hz),
n = 9, m = 5, that is, conversion ratio (n / m) = 9/5 (9/5 times speed drive, 108 Hz),
n = 9, m = 7, that is, conversion ratio (n / m) = 9/7 (9/7 times speed drive, 77.1 Hz)
,
n = 9, m = 8, that is, conversion ratio (n / m) = 9/8 (9/8 times speed drive, 67.5 Hz)
,
n = 10, m = 1, that is, conversion ratio (n / m) = 10 (10x speed drive, 600Hz),
n = 10, m = 3, that is, conversion ratio (n / m) = 10/3 (10/3 times speed drive, 200H
z),
n = 10, m = 7, that is, conversion ratio (n / m) = 10/7 (10/7 times speed drive, 85.7)
Hz),
n = 10, m = 9, that is, conversion ratio (n / m) = 10/9 (10/9 times speed drive, 66.7)
Hz),
The above combinations are conceivable. The frequency notation is an example when the input frame rate is 60 Hz, and for other input frame rates, the value obtained by integrating each conversion ratio with the input frame rate is the drive frequency.

When n is an integer greater than 10, specific numbers n and m are not given, but the frame rate conversion procedure in the first step can be applied to various n and m. Is clear.

The conversion ratio can be determined depending on how much of the displayed images the input image data includes an image that can be displayed without motion compensation. Specifically, the smaller m is, the larger the proportion of images that can be displayed without performing motion compensation on the input image data. If the frequency of motion compensation is low, the frequency of operation of the circuit that compensates for motion can be reduced, so power consumption can be reduced, and the motion compensation accurately reflects the motion of the image containing the error (the motion of the image is accurately reflected). Since it is possible to reduce the possibility that an intermediate image) is created, the quality of the image can be improved. As such a conversion ratio, in the range where n is 10 or less, for example, 1,2,3,3 / 2,4.
5,5 / 2,6,7,7 / 2,8,9,9 / 2,10 can be mentioned. When such a conversion ratio is used, the quality of the image can be improved and the power consumption can be reduced, particularly when an intermediate image obtained by motion compensation is used as the interpolated image. This is because when m is 2, the number of images that can be displayed without motion compensation in the input image data is relatively large (only 1/2 of the total number of input image data exists). ,
This is because the frequency of motion compensation is reduced. Further, when m is 1, the number of images that can be displayed without performing motion compensation on the input image data is large (equal to the total number of input image data), and motion compensation is not performed. is there. On the other hand, the larger m is, the more accurate the intermediate image created by the motion compensation can be used, so that there is an advantage that the motion of the image can be made smoother.

When the display device is a liquid crystal display device, the conversion ratio can be determined according to the response time of the liquid crystal element. Here, the response time of the liquid crystal element is the time from changing the voltage applied to the liquid crystal element to the response of the liquid crystal element. When the response time of the liquid crystal element differs depending on the amount of change in the voltage applied to the liquid crystal element, it can be the average value of the response times in a plurality of typical voltage changes. Alternatively, the response time of the liquid crystal element is MPRT (Movin).
It may be defined by g Picture Response Time).
Then, by frame rate conversion, the conversion ratio can be determined so that the image display cycle is close to the response time of the liquid crystal element. Specifically, the response time of the liquid crystal element is preferably the time from the value obtained by integrating the period of the input image data and the reciprocal of the conversion ratio to a value of about half of this value. By doing so, the image display cycle can be set to match the response time of the liquid crystal element, so that the image quality can be improved. For example, when the response time of the liquid crystal element is 4 ms or more and 8 ms or less, double speed drive (120 Hz drive) can be performed. This is because the image display cycle driven at 120 Hz is about 8 milliseconds, and half of the image display cycle driven at 120 Hz is about 4 milliseconds. Similarly, for example, when the response time of the liquid crystal element is 3 ms or more and 6 ms or less, the triple speed drive (180 Hz drive) can be performed, and the response time of the liquid crystal element is 5.
1.5x speed drive (90Hz drive) can be used when the response time is between milliseconds and 11 milliseconds, and 4x speed drive (240Hz drive) can be used when the response time of the liquid crystal element is 2 milliseconds or more and 4 milliseconds or less. ), And when the response time of the liquid crystal element is 6 ms or more and 12 ms or less, 1
.. It can be driven at 25 times speed (80 Hz drive). The same applies to other drive frequencies.

The conversion ratio can also be determined by the trade-off between the quality of the moving image and the power consumption and the manufacturing cost. That is, while increasing the conversion ratio can improve the quality of moving images, decreasing the conversion ratio can reduce power consumption and manufacturing cost. That is, each conversion ratio in the range where n is 10 or less has the following advantages.

When the conversion ratio is 1, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 1, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 1. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about one time the cycle of the input image data.

When the conversion ratio is 2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 2. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/2 times the cycle of the input image data.

When the conversion ratio is 3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 3. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/3 times the cycle of the input image data.

When the conversion ratio is 3/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 3/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 3/2. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about two-thirds of the cycle of the input image data.

When the conversion ratio is 4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 4. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/4 times the cycle of the input image data.

When the conversion ratio is 4/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 4/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 4/3. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/4 times the cycle of the input image data.

When the conversion ratio is 5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/5 times the cycle of the input image data.

When the conversion ratio is 5/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5/2. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 2/5 times the cycle of the input image data.

When the conversion ratio is 5/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5/3. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/5 times the cycle of the input image data.

When the conversion ratio is 5/4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 5/4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 5/4. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 4/5 times the cycle of the input image data.

When the conversion ratio is 6, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 6, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 6. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/6 times the cycle of the input image data.

When the conversion ratio is 6/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 6/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 6/5. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/6 times the cycle of the input image data.

When the conversion ratio is 7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/7 times the cycle of the input image data.

When the conversion ratio is 7/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/2. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 2/7 times the cycle of the input image data.

When the conversion ratio is 7/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/3. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/4 times the cycle of the input image data.

When the conversion ratio is 7/4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/4. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 4/7 times the cycle of the input image data.

When the conversion ratio is 7/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/5. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/7 times the cycle of the input image data.

When the conversion ratio is 7/6, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 7/6, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 7/6. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 6/7 times the cycle of the input image data.

When the conversion ratio is 8, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/8 times the cycle of the input image data.

When the conversion ratio is 8/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/3. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/4 times the cycle of the input image data.

When the conversion ratio is 8/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/5. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/8 times the cycle of the input image data.

When the conversion ratio is 8/7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 8/7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/7. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 7/8 times the cycle of the input image data.

When the conversion ratio is 9, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/9 times the cycle of the input image data.

When the conversion ratio is 9/2, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/2, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/2. Further, since m is small, high image quality can be obtained and power consumption can be reduced. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 2/9 times the cycle of the input image data.

When the conversion ratio is 9/4, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/4, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/4. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 4/9 times the cycle of the input image data.

When the conversion ratio is 9/5, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/5, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/5. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/9 times the cycle of the input image data.

When the conversion ratio is 9/7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/7. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 7/9 times the cycle of the input image data.

When the conversion ratio is 9/8, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 9/8, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 9/8. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 8/9 times the cycle of the input image data.

When the conversion ratio is 10, the quality of the video can be improved as compared with the case where the conversion ratio is smaller than 10.
Power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10. Furthermore, m
Is small, so high image quality can be obtained while power consumption can be reduced. Furthermore, by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/10 times the cycle of the input image data,
Image quality can be improved.

When the conversion ratio is 10/3, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 10/3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10/3. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/10 times the cycle of the input image data.

When the conversion ratio is 10/7, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 10/7, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10/7. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 7/10 times the cycle of the input image data.

When the conversion ratio is 10/9, the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 10/9, and the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 10/9. Further, since m is large, the movement of the image can be made smoother. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 9/10 times the cycle of the input image data.

It is clear that each conversion ratio in the range where n is larger than 10 has the same advantage.

Next, as a second step, an image according to the input image data or each image whose frame rate has been converted to an arbitrary rational number (n / m) times in the first step (referred to as an original image). ), A method of creating a plurality of different images (sub-images) and presenting the plurality of sub-images continuously in time will be described. By doing so, it is possible to make the human eye perceive as if one original image is displayed, even though a plurality of images are actually presented.

Here, among the sub-images created from one original image, the sub-image displayed first is referred to as a first sub-image. Here, it is assumed that the timing of displaying the first sub-image is the same as the timing of displaying the original image determined in the first step. on the other hand,
The sub-image displayed after that is referred to as a second sub-image. The timing for displaying the second sub-image can be arbitrarily determined regardless of the timing for displaying the original image determined in the first step. The image to be actually displayed is an image created from the original image by the method in the second step. Various images can be used as the original image for creating the sub image. The number of sub-images is not limited to two and may be larger than two. In the second step, the number of sub-images is expressed as J (J is an integer of 2 or more). At this time, the sub-image displayed at the same timing as the original image determined in the first step is called the first sub-image, and the sub-images displayed thereafter are displayed. The second sub-image, the third sub-image, ...
, The Jth sub-image.

There are various methods for creating a plurality of sub-images from one original image, and the main ones are as follows. One is a method of using the original image as it is as a sub image. One is a method of distributing the brightness of the original image to a plurality of sub-images. One is a method of using an intermediate image obtained by motion compensation as a sub-image.

Here, the method of distributing the brightness of the original image to a plurality of sub-images can be further divided into a plurality of methods. The main methods are as follows. One is a method of making at least one sub-image a black image (referred to as a black insertion method). One is
When the brightness of the original image is divided into a plurality of ranges and the brightness in the range is controlled, the method is performed by only one sub-image among all the sub-images (called a time-division gradation control method). ). One is a method in which one sub-image is a bright image in which the gamma value of the original image is changed and the other sub-image is a dark image in which the gamma value of the original image is changed (referred to as a gamma complementation method). ).

Each of the above methods will be briefly described. In the method of using the original image as it is as a sub image, the original image is used as it is as the first sub image. Further, as the second sub-image, the original image is used as it is. When this method is used, it is not necessary to operate a circuit for newly creating a sub-image, or it is not necessary to use the circuit itself, so that power consumption and manufacturing cost can be reduced. In particular, in a liquid crystal display device, the first
In the step of, it is preferable to use this method after performing frame rate conversion using the intermediate image obtained by motion compensation as an interpolated image. This is because the intermediate image obtained by motion compensation is used as an interpolated image to smooth the motion of the moving image, and the same image is repeatedly displayed, resulting in insufficient writing voltage due to the dynamic capacitance of the liquid crystal element. This is because obstacles such as tailing and afterimages can be reduced.

Next, in the method of distributing the brightness of the original image to a plurality of sub-images, a method of setting the brightness of the image and the length of the period in which the sub-images are displayed will be described in detail. Note that J represents the number of sub-images and is assumed to be an integer of 2 or more. The lowercase j is distinguished from the uppercase J. It is assumed that j is an integer of 1 or more and J or less.
The brightness of the pixels in normal hold drive is L, the period of the original image data is T,
The brightness L _j of the pixels in the sub-image of the _j, the length T _j of the period in which the sub image is displayed in the first _j, and when taking a product for L _j and T _j, from which the j = 1 Sum up to j = J (L)
_{It is preferable that 1} T ₁ + L ₂ T ₂ + ... + L _J T _J ) is equal to the product of L and T (LT) (the brightness is invariant). Furthermore, the _{T j,} the sum of j = 1 through _{j = J (T 1 + T} 2 + ··· + T J) is that is equal to the T (the display period of the original image is maintained) of preferable. Here, the fact that the brightness is unchanged and the display cycle of the original image is maintained is referred to as a sub-image distribution condition.

Among the methods of distributing the brightness of the original image to a plurality of sub-images, the black insertion method is a method of converting at least one sub-image into a black image. By doing so, since the display method can be pseudo-impulse type, it is possible to prevent deterioration of the quality of the moving image due to the hold type display method. Here, in order to prevent a decrease in the brightness of the displayed image due to the insertion of the black image, it is preferable to follow the sub-image distribution condition. However, if the situation is such that the decrease in the brightness of the displayed image is acceptable (dark surroundings, etc.), or if the user has set the decrease in the brightness of the displayed image tolerable, the sub-image You do not have to follow the distribution conditions. For example, one sub-image may be the same as the original image, and the other sub-image may be a black image. In this case, the power consumption can be reduced as compared with the case where the sub-image distribution condition is followed. Further, in the liquid crystal display device, when the overall brightness of the original image is increased without limiting the maximum value of the brightness of one of the sub-images, the brightness of the backlight is increased. Then, the sub-image distribution condition may be realized. In this case, since the sub-image distribution condition can be satisfied without controlling the voltage value written to the pixel, the operation of the image processing circuit can be omitted and the power consumption can be reduced.

The black insertion method is characterized in that _{L j of} all pixels is set to 0 in any one of the sub-images. By doing so, since the display method can be pseudo-impulse type, it is possible to prevent deterioration of the quality of the moving image due to the hold type display method.

Of the methods for distributing the brightness of the original image to a plurality of sub-images, the time-division gradation control method divides the brightness of the original image into a plurality of ranges and controls the brightness in the range. This is a method performed by using only one sub-image among the sub-images of. By doing so, since the display method can be pseudo-impulse type without reducing the brightness, it is possible to prevent the deterioration of the quality of the moving image due to the hold type display method.

As a method of dividing the brightness of the original image into a plurality of ranges, the maximum value of the brightness (L _max ) is set.
There is a method of dividing by the number of sub-images. This is, for example, in a _{display device in which the brightness from 0 to L max} can be adjusted in 256 steps (gradation 0 to gradation 255), when the number of sub-images is 2, the gradation 0 to gradation 127. Is displayed, the brightness of one sub-image is adjusted in the range of gradation 0 to gradation 255, while the brightness of the other sub-image is set to gradation 0.
When displaying gradations 128 to 255, the brightness of one of the sub-images is set to gradation 255.
On the other hand, it is a method of adjusting the brightness of the other sub-image in the range of gradation 0 to gradation 255. By doing so, the original image can be perceived by the human eye as if it were displayed, and the impulse type can be simulated, so that the quality of the moving image deteriorates due to the hold type. Can be prevented. The number of sub-images may be larger than 2. For example, when the number of sub-images is 3, the brightness level of the original image (gradation 0 to gradation 2).
55) is divided into three parts. Depending on the number of brightness stages of the original image and the number of sub-images, the number of brightness stages may not be divisible by the number of sub-images, but they are included in the range of each brightness after division. The number of brightness stages may not be exactly the same, but may be appropriately distributed.

It should be noted that the time-division gradation control method is also preferable because the same image as the original image can be displayed without lowering the brightness by satisfying the sub-image distribution condition.

Of the methods for distributing the brightness of the original image to a plurality of sub-images, the gamma complementation method uses one sub-image as a bright image in which the gamma characteristics of the original image are changed, and the other sub-image as the gamma of the original image. This is a method of producing a dark image with changed characteristics. By doing so, since the display method can be pseudo-impulse type without reducing the brightness, it is possible to prevent the deterioration of the quality of the moving image due to the hold type display method. Here, the gamma characteristic is the degree of brightness with respect to the stage (gradation) of brightness. Normally, the gamma characteristic is adjusted to be close to linear. This is because a smooth gradation can be obtained by making the change in brightness proportional to the gradation, which is the stage of brightness. In the gamma complementation method, the gamma characteristic of one of the sub-images is shifted from the linearity and adjusted so that it is brighter than the linearity in the region of intermediate brightness (halftone) (the halftone becomes a brighter image than it should be). )
.. Then, the gamma characteristic of the other sub-image is also deviated from the linearity and adjusted so as to be darker than the linearity in the region of the halftone (the halftone becomes a darker image than the original). Here, the amount of one sub-image brighter than linear and the amount of the other sub-image darker than linear are
It is preferable that all gradations are approximately equal. By doing so, the original image can be perceived by the human eye as if it were displayed, and the deterioration of the quality of the moving image due to the hold type can be prevented. The number of sub-images may be larger than 2. For example, when the number of sub-images is 3, the gamma characteristics of each of the three sub-images can be adjusted so that the total amount of linear to brightened quantities and the total of linear to darkened quantities are approximately equal. Good.

It should be noted that the gamma complementation method is also preferable because the same image as the original image can be displayed without reducing the brightness by satisfying the sub-image distribution condition. further,
In gamma complement method, the change in brightness L _j of each sub-image with respect to gray scale follows a gamma curve, can smoothly display the gradation respective sub image itself,
It has the advantage of improving the quality of the image that is ultimately perceived by the human eye.

The method of using the intermediate image obtained by motion compensation as a sub image is a method of using one of the sub images as an intermediate image obtained by motion compensation from the previous and next images. By doing so, the movement of the image can be smoothed, and the quality of the moving image can be improved.

Next, the relationship between the timing of displaying the sub-image and the method of creating the sub-image will be described. The timing of displaying the first sub-image is the same as the timing of displaying the original image determined in the first step, and the timing of displaying the second sub-image is the original determined in the first step. Although it can be arbitrarily determined regardless of the timing of displaying the image, the sub-image itself may be changed according to the timing of displaying the second sub-image. By doing so, even if the timing of displaying the second sub image is changed variously, it can be perceived by the human eye as if the original image was displayed. Specifically, when the timing of displaying the second sub image is earlier, the first sub image becomes brighter and the second sub image is displayed.
The sub-image of can be made darker. Further, when the timing of displaying the second sub-image is delayed, the first sub-image can be made darker and the second sub-image can be made brighter. This is because the brightness perceived by the human eye changes depending on the length of the period in which the image is displayed. More specifically, the brightness perceived by the human eye becomes brighter as the period of displaying the image becomes longer, and becomes darker as the period of displaying the image becomes shorter. That is, by advancing the timing of displaying the second sub-image, the length of the period for displaying the first sub-image becomes shorter and the length of the period for displaying the second sub-image becomes longer. As it is, the first sub-image is dark and the second sub-image is bright and perceived by the human eye. As a result, an image different from the original image will be perceived by the human eye, but in order to prevent this, the first
The sub-image of can be brighter and the second sub-image can be darker. Similarly, the second
By delaying the timing of displaying the sub-image of, the length of the period for displaying the first sub-image becomes longer, and the length of the period for displaying the second sub-image becomes shorter, the first The sub-image can be darker and the second sub-image can be brighter.

Based on the above description, the processing procedure in the second step is shown below.
As step 1, a method of creating a plurality of sub-images from one original image is determined. More specifically, the method of creating a plurality of sub-images is a method of using the original image as it is as a sub-image, a method of distributing the brightness of the original image to a plurality of sub-images, and a method of using an intermediate image obtained by motion compensation as a sub-image. Can be selected from the methods used as.
As step 2, the number J of sub-images is determined. J is an integer of 2 or more.
As step 3, the brightness L _{j of the pixel in the j-th sub-image and the length T j of the} period in which the j-th sub-image is displayed are determined according to the method selected in step 1. According to step 3, the length of the period in which each sub-image is displayed and the brightness of each pixel included in each sub-image are specifically determined.
As step 4, the original image is processed and actually displayed according to the items determined in each of steps 1 to 3.
As step 5, the target original image is moved to the next original image. Then, the process returns to step 1.

The mechanism for executing the procedure in the second step may be mounted on the device or may be predetermined at the design stage of the device. If a mechanism for executing the procedure in the second step is implemented in the device, it is possible to switch the driving method so that the optimum operation is performed according to the situation. The situation here means the content of the image data, the environment inside and outside the device (temperature, humidity, atmospheric pressure, light, sound, magnetic field, electric field, radiation dose, etc.)
Includes altitude, acceleration, speed of movement, etc.), user settings, software version, etc. On the other hand, if the mechanism for executing the procedure in the second step is predetermined at the device design stage, the optimum drive circuit can be used for each drive method, and the mechanism is further determined. As a result, it can be expected that the manufacturing cost will be reduced due to the mass production effect.

Next, various driving methods determined by the procedure in the second step will be described in detail by showing concretely the values of n and m in the first step, respectively.

When the method of using the original image as it is as the sub image is selected in the procedure 1 in the second step, the driving method is as follows.

The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially prepared at a constant period T.
The period T is divided into J (J is an integer of 2 or more) sub-image display periods.
The i-th image data is data capable of giving each of a plurality of pixels a unique brightness L.
Sub-image of the j (j is 1 or more J an integer) is constituted by pixels having a specific brightness L _j, respectively, are more juxtaposed, it is displayed by the sub-image display period T _j of the j It is an image
The L, the T, the L _j , and the T _j are driving methods of a display device satisfying the sub-image distribution condition.
_{In all j, the brightness L j} of each pixel included in the jth sub-image is _{L j} = L for each pixel.
Here, as the image data sequentially prepared at a constant cycle T, the original image data created in the first step can be used. That is, all the display patterns mentioned in the description of the first step can be combined with the above-mentioned driving method.

Then, when the number J of the sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. 69. It will be something like.
In FIG. 69, the horizontal axis represents time, and the vertical axis shows the various n and m used in the first step in different cases.

For example, in the first step, when n = 1, m = 1, that is, the conversion ratio (n / m) is 1, the driving method as shown at the location of n = 1, m = 1 in FIG. 69 is used. Become. At this time, the display frame rate is twice the frame rate of the input image data (double speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (120 Hz drive). Then, the image is displayed twice in succession for one input image data. Here, in the case of the double speed drive, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the double speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is higher than the double speed. Further, in step 1 of the second step,
By selecting the method of using the original image as a sub-image as it is, it is possible to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device, so that the power consumption and the manufacturing cost of the device are reduced. Can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 120 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 120 Hz, the frequency of AC drive is an integral multiple or a fraction of that (for example, 30 Hz, 60 Hz).
, 120Hz, 240Hz, etc.), the flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/2 times the cycle of the input image data.

Further, for example, in the first step, n = 2, m = 1, that is, the conversion ratio (n / m).
) Is 2, the driving method is as shown at the location of n = 2, m = 1 in FIG. 69. At this time, the display frame rate is four times the frame rate of the input image data (fourx speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, the image is displayed four times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Here, in the case of 4x speed drive, the quality of moving images can be improved as compared with the case where the frame rate is smaller than 4x speed, and the power consumption and the manufacturing cost can be reduced as compared with the case of higher than 4x speed. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device,
Since the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 240 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 240 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/4 times the cycle of the input image data.

Further, for example, in the first step, n = 3, m = 1, that is, the conversion ratio (n / m).
) Is 3, the driving method is as shown at the location of n = 3, m = 1 in FIG. 69. At this time, the display frame rate is 6 times the frame rate of the input image data (6x speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 360 Hz (360 Hz drive). Then, the image is displayed six times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Here, in the case of 6x speed drive, the quality of moving images can be improved as compared with the case where the frame rate is smaller than 6x speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than 6x speed. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device,
Since the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 360 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 360 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/6 times the cycle of the input image data.

Further, for example, in the first step, n = 3, m = 2, that is, the conversion ratio (n / m).
) Is 3/2, the driving method is as shown at the location of n = 3, m = 2 in FIG. 69.
At this time, the display frame rate is three times the frame rate of the input image data (3x speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, the image is displayed three times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Here, 3
In the case of double speed drive, the quality of moving images can be improved as compared with the case where the frame rate is smaller than 3 times speed, and the power consumption and manufacturing cost can be reduced as compared with the case of higher than 3 times speed. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 180 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 180 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/3 times the cycle of the input image data.

Further, for example, in the first step, n = 4, m = 1, that is, the conversion ratio (n / m).
) Is 4, the driving method is as shown at the location of n = 4, m = 1 in FIG. 69. At this time, the display frame rate is 8 times the frame rate of the input image data (8x speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 480 Hz (480 Hz drive). Then, the image is displayed eight times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Here, in the case of the 8x speed drive, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the 8x speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than the 8x speed. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device,
Since the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 480 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 480 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/8 times the cycle of the input image data.

Further, for example, in the first step, n = 4, m = 3, that is, the conversion ratio (n / m).
) Is 4/3, the driving method is as shown at the location of n = 4, m = 3 in FIG. 69.
At this time, the display frame rate is 8/3 times the frame rate of the input image data (8).
/ 3x speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 160 Hz (160 Hz drive). Then, the image is displayed eight times in succession for the three input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Here, in the case of 8/3 times speed drive, the quality of moving images can be improved as compared with the case where the frame rate is smaller than 8/3 times speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than 8/3 times speed. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages.
Further, it is also effective to combine the AC drive and the 160 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 160 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that (for example, 40 Hz, 80 Hz, 160 Hz, 320 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/4 times the cycle of the input image data.

Further, for example, in the first step, n = 5, m = 1, that is, the conversion ratio (n / m).
) Is 5, the driving method is as shown at the location of n = 5, m = 1 in FIG. 69. At this time, the display frame rate is 10 times the frame rate of the input image data (driving at 10 times speed). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 600 Hz (600 Hz drive). Then, the image is displayed 10 times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. here,
When the 10x speed drive is used, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the 10x speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is larger than the 10x speed. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 600 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 600 Hz and setting the frequency of the AC drive to an integral multiple or a fraction of that frequency (for example, 30 Hz, 60 Hz, 100 Hz, 120 Hz, etc.), the flicker that appears due to the AC drive can be prevented. It can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/10 times the cycle of the input image data.

Further, for example, in the first step, n = 5, m = 2, that is, the conversion ratio (n / m).
) Is 5/2, the driving method is as shown at the location of n = 5, m = 2 in FIG. 69.
At this time, the display frame rate is 5 times the frame rate of the input image data (5x speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, the image is displayed five times in succession for one input image data. At this time, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be remarkably improved. Here, in the case of the 5x speed drive, the quality of the moving image can be improved as compared with the case where the frame rate is smaller than the 5x speed, and the power consumption and the manufacturing cost can be reduced as compared with the case where the frame rate is higher than the 5x speed. In addition, the second
By selecting the method of using the original image as a sub-image as it is in step 1, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the apparatus. Power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Further, it is also effective to combine the AC drive and the 300 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 300 Hz, the frequency of AC drive is an integral multiple or an integral fraction of that (
For example, 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.), the flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/5 times the cycle of the input image data.

In this way, in step 1 of the second step, a method of using the original image as it is as a sub image is selected.
In step 2 of the second step, the number of sub-images is determined to be 2.
If it is determined that T1 = T2 = T / 2 in step 3 in the second step, the first
Since the display frame rate can be further doubled with respect to the frame rate conversion of the conversion ratio determined by the values of n and m in the step of, it is possible to further improve the quality of the moving image. Further, the quality of the moving image can be improved as compared with the case where the display frame rate is smaller than the display frame rate, and the power consumption and the manufacturing cost can be reduced as compared with the case where the display frame rate is larger than the display frame rate.
Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. further,
By increasing the drive frequency of the liquid crystal display device and setting the frequency of the AC drive to an integral multiple or a fraction of the frequency, the flicker that appears due to the AC drive can be reduced to a extent that is not perceived by the human eye. Furthermore, the response time of the liquid crystal element is the cycle of the input image data (
The image quality can be improved by applying it to a liquid crystal display device having about 1 / (twice the conversion ratio)) times.

Although detailed description has been omitted, it is clear that the same advantages are obtained in cases other than the conversion ratios mentioned above. For example, in the range where n is 10 or less, in addition to those listed above,
n = 5, m = 3, that is, conversion ratio (n / m) = 5/3 (10/3 times speed drive, 200 Hz)
,
n = 5, m = 4, that is, conversion ratio (n / m) = 5/4 (5/2 times speed drive, 150 Hz),
n = 6, m = 1, that is, conversion ratio (n / m) = 6 (12x speed drive, 720Hz),
n = 6, m = 5, that is, conversion ratio (n / m) = 6/5 (12/5 times speed drive, 144 Hz)
,
n = 7, m = 1, that is, conversion ratio (n / m) = 7 (14x speed drive, 840Hz),
n = 7, m = 2, that is, conversion ratio (n / m) = 7/2 (7x speed drive, 420Hz),
n = 7, m = 3, that is, conversion ratio (n / m) = 7/3 (14/3 times speed drive, 280 Hz)
,
n = 7, m = 4, that is, conversion ratio (n / m) = 7/4 (7/2 times speed drive, 210 Hz),
n = 7, m = 5, that is, conversion ratio (n / m) = 7/5 (14/5 times speed drive, 168 Hz)
,
n = 7, m = 6, that is, conversion ratio (n / m) = 7/6 (7/3 times speed drive, 140 Hz),
n = 8, m = 1, that is, conversion ratio (n / m) = 8 (16x speed drive, 960Hz),
n = 8, m = 3, that is, conversion ratio (n / m) = 8/3 (16/3 times speed drive, 320 Hz)
,
n = 8, m = 5, that is, conversion ratio (n / m) = 8/5 (16/5 times speed drive, 192 Hz)
,
n = 8, m = 7, that is, conversion ratio (n / m) = 8/7 (16/7 times speed drive, 137 Hz)
,
n = 9, m = 1, that is, conversion ratio (n / m) = 9 (18x speed drive, 1080Hz),
n = 9, m = 2, that is, conversion ratio (n / m) = 9/2 (9x speed drive, 540Hz),
n = 9, m = 4, that is, conversion ratio (n / m) = 9/4 (9/2 times speed drive, 270 Hz),
n = 9, m = 5, that is, conversion ratio (n / m) = 9/5 (18/5 times speed drive, 216 Hz)
,
n = 9, m = 7, that is, conversion ratio (n / m) = 9/7 (18/7 times speed drive, 154 Hz)
,
n = 9, m = 8, that is, conversion ratio (n / m) = 9/8 (9/4 times speed drive, 135 Hz),
n = 10, m = 1, that is, conversion ratio (n / m) = 10 (20x speed drive, 1200Hz),
n = 10, m = 3, that is, conversion ratio (n / m) = 10/3 (20/3 times speed drive, 400H
z),
n = 10, m = 7, that is, conversion ratio (n / m) = 10/7 (20/7 times speed drive, 171H
z),
n = 10, m = 9, that is, conversion ratio (n / m) = 10/9 (20/9 times speed drive, 133H
z),
The above combinations are conceivable. The frequency notation is an example when the input frame rate is 60 Hz, and for other input frame rates, the drive frequency is a value obtained by integrating twice the conversion ratios with the input frame rate.

When n is an integer greater than 10, specific numbers n and m are not given, but it is clear that the procedure in the second step can be applied to various n and m. ..

When J = 2, it is particularly effective when the conversion ratio in the first step is larger than 2. This is because if the number of sub-images is made relatively small, such as J = 2, in the second step, the conversion ratio in the first step can be increased accordingly. Such conversion ratios are 3, 4, 5, 5/2, 6, 7 in the range where n is 10 or less.
, 7/2, 7/3, 8, 8/3, 9, 9/2, 9/4, 10/10/3.
When the display frame rate after the first step is such a value, by setting J = 3 or more, the advantage that the number of sub-images in the second step is small (reduction of power consumption and manufacturing cost, etc.) It is possible to achieve both the advantages of a large final display frame rate (improvement of video quality, reduction of flicker, etc.).

Here, the number J of the sub-images is determined to be 2 in the procedure 2, and T ₁ = in the procedure 3.
The _{case where it is determined that T 2} = T / 2 has been described, but it is clear that the case is not limited to this.

_{For example, if T 1} <T ₂ is determined in step 3 of the second step, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined in step 3 of step 3 that T ₁ > T ₂ , the first sub-image can be made darker and the second sub-image can be made brighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. However, when the method of using the original image as the sub image as it is is selected in the procedure 1 as in the above driving method, the sub image may be displayed as it is without changing the brightness. This is because, in this case, the images used as the sub-images are the same, so that the original image can be displayed properly regardless of the display timing of the sub-images.

Further, in step 2, it is clear that the number J of the sub-images may be determined to be a value other than 2. In this case, the display frame rate can be further J times the frame rate conversion of the conversion ratio determined by the values of n and m in the first step, so that the quality of the moving image can be further improved. Is possible. Further, the quality of the moving image can be improved as compared with the case where the display frame rate is smaller than the display frame rate, and the power consumption and the manufacturing cost can be reduced as compared with the case where the display frame rate is larger than the display frame rate. Further, in step 1 of the second step, by selecting the method of using the original image as it is as the sub image, the operation of the circuit that creates the intermediate image by motion compensation is stopped or the circuit itself is omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Furthermore, by increasing the drive frequency of the liquid crystal display device and reducing the frequency of the AC drive to an integral multiple or a fraction of that frequency, the flicker that appears due to the AC drive can be reduced to the extent that it is not perceived by the human eye. it can. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (J times the conversion ratio)) times the cycle of the input image data.

For example, when J = 3, the quality of the moving image can be improved as compared with the case where the number of sub-images is smaller than 3, and the power consumption and the manufacturing cost can be reduced as compared with the case where the number of sub-images is larger than 3. Has advantages. Further, the response time of the liquid crystal element is (1) of the cycle of the input image data.
The image quality can be improved by applying it to a liquid crystal display device having a / (three times the conversion ratio)) times.

Further, for example, when J = 4, the quality of the moving image can be improved as compared with the case where the number of sub-images is smaller than 4, and the power consumption and the manufacturing cost are reduced as compared with the case where the number of sub-images is larger than 4. It has the advantage of being able to. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (4 times the conversion ratio)) times the cycle of the input image data.

Further, for example, when J = 5, the quality of the moving image can be improved particularly when the number of sub-images is smaller than 5, and the power consumption and the manufacturing cost are reduced as compared with the case where the number of sub-images is larger than 5. It has the advantage of being able to. Further, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (5 times the conversion ratio)) times the cycle of the input image data.

Further, J has similar advantages other than those listed above.

When J = 3 or more, the conversion ratio in the first step can take various values, but especially when the conversion ratio in the first step is relatively small (2 or less), J = 3
It is effective to do the above. This is because if the display frame rate after the first step is relatively small, J can be increased in the second step accordingly. Such conversion ratios are 1, 2, 3/2, 4/3, in the range where n is 10 or less.
5/3, 5/4, 6/5, 7/4, 7/5, 7/6, 8/7, 9/5, 9/7, 9/8,
10/7, 10/9, and the like. Of these, the conversion ratio is 1, 2, 3/2, 4/3, 5 /
The cases of 3, 5/4 are shown in FIG. 70. As described above, when the display frame rate after the first step is a relatively small value, by setting J = 3 or more, the advantage of the small display frame rate in the first step (power consumption and manufacturing cost). It is possible to achieve both the advantages (improvement of video quality, reduction of flicker, etc.) due to the large final display frame rate (reduction, etc.).

Next, another example of the driving method determined by the procedure in the second step will be described.

When the black insertion method is selected from the methods for distributing the brightness of the original image to a plurality of sub-images in the procedure 1 in the second step, the driving method is as follows.

The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially prepared at a constant period T.
The period T is divided into J (J is an integer of 2 or more) sub-image display periods.
The i-th image data is data capable of giving each of a plurality of pixels a unique brightness L.
Sub-image of the j (j is 1 or more J an integer) is constituted by pixels having a specific brightness L _j, respectively, are more juxtaposed, it is displayed by the sub-image display period T _j of the j It is an image
The L, the T, the L _j , and the T _j are driving methods of a display device satisfying the sub-image distribution condition.
_{In at least one j, the brightness L j of} all the pixels included in the j-th sub-image is L _j.
It is characterized in that = 0.
Here, as the image data sequentially prepared at a constant cycle T, the original image data created in the first step can be used. That is, all the display patterns mentioned in the description of the first step can be combined with the above-mentioned driving method.

It is clear that the above driving method can be carried out in combination for each of the various n and m used in the first step.

Then, when the number J of the sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. 69. It will be something like.
Since the features and advantages of the driving method (display timing at various n and m) shown in FIG. 69 have already been described, detailed description thereof will be omitted here, but in step 1 in the second step, the brightness of the original image. Of the methods of distributing the image to a plurality of sub-images, it is clear that the same advantage is obtained even when the black insertion method is selected. For example, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Further, when the display frame rate is large, the quality of the moving image can be improved, and when the display frame rate is small, the power consumption and the manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Furthermore, the flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye.

In step 1 of the second step, among the methods of distributing the brightness of the original image to a plurality of sub-images, the characteristic advantage of selecting the black insertion method is that an intermediate image is created by motion compensation. Because the operation of the circuit can be stopped or the circuit itself can be omitted from the device.
It is possible to reduce power consumption and manufacturing cost of equipment. Further, since the impulse type display method can be used in a pseudo manner regardless of the gradation value included in the image data, the quality of the moving image can be improved.

Here, the number J of the sub-images is determined to be 2 in the procedure 2, and T ₁ = in the procedure 3.
The _{case where it is determined that T 2} = T / 2 has been described, but it is clear that the case is not limited to this.

_{For example, if T 1} <T ₂ is determined in step 3 of the second step, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined in step 3 of step 3 that T ₁ > T ₂ , the first sub-image can be made darker and the second sub-image can be made brighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. However, when the black insertion method is selected from the methods for distributing the brightness of the original image to a plurality of sub-images in step 1 as in the above-mentioned driving method, the brightness of the sub-image is not changed. You may display it as it is. because,
In this case, if the brightness of the sub image is not changed, the overall brightness of the original image is only darkened and displayed. That is, by positively using this method for controlling the brightness of the display device, it is possible to control the brightness while improving the quality of the moving image.

Further, in step 2, it is clear that the number J of the sub-images may be determined to be a value other than 2. Since the advantages in that case have already been described, detailed description thereof will be omitted here, but among the methods for distributing the brightness of the original image to a plurality of sub-images in step 1 in the second step, the black insertion method is used. It is clear that it has similar advantages when selected. For example, the response time of the liquid crystal element is (1 / (J times the conversion ratio) of the period of the input image data).
The image quality can be improved by applying it to a liquid crystal display device which is about twice as large.

Next, another example of the driving method determined by the procedure in the second step will be described.

When the time-division gradation control method is selected from the methods for distributing the brightness of the original image to a plurality of sub-images in the procedure 1 in the second step, the driving method is as follows.

The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially prepared at a constant period T.
The period T is divided into J (J is an integer of 2 or more) sub-image display periods.
The i-th image data is data capable of giving each of a plurality of pixels a unique brightness L.
The maximum value of the inherent brightness L is L _max .
Sub-image of the j (j is 1 or more J an integer) is constituted by pixels having a specific brightness L _j, respectively, are more juxtaposed, it is displayed by the sub-image display period T _j of the j It is an image
The L, the T, the L _j , and the T _j are driving methods of a display device satisfying the sub-image distribution condition.
In displaying the unique brightness L, (j-1) × L _max / J to J × L _max
The brightness in the brightness range of / J is adjusted by adjusting the brightness in only one sub-image display period out of the J sub-image display periods.
Here, as the image data sequentially prepared at a constant cycle T, the original image data created in the first step can be used. That is, all the display patterns mentioned in the description of the first step can be combined with the above-mentioned driving method.

It is clear that the above driving method can be carried out in combination for each of the various n and m used in the first step.

Then, when the number J of the sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. 69. It will be something like.
Since the features and advantages of the driving method (display timing at various n and m) shown in FIG. 69 have already been described, detailed description thereof will be omitted here, but in step 1 in the second step, the brightness of the original image. It is clear that the method of distributing the image to a plurality of sub-images has the same advantage even when the time-division gradation control method is selected. For example, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Further, when the display frame rate is large, the quality of the moving image can be improved, and when the display frame rate is small, the power consumption and the manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Furthermore, the flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye.

Among the methods of distributing the brightness of the original image to a plurality of sub-images in step 1 of the second step, the characteristic advantage of selecting the time-division gradation control method is that the intermediate image is compensated for motion. Since the operation of the circuit for creating the image can be stopped or the circuit itself can be omitted from the device, the power consumption and the manufacturing cost of the device can be reduced. further,
Since the pseudo-impulse type display method can be used, the quality of the moving image can be improved, and the brightness of the display device is not reduced, so that the power consumption can be further reduced.

Here, the number J of the sub-images is determined to be 2 in the procedure 2, and T ₁ = in the procedure 3.
The _{case where it is determined that T 2} = T / 2 has been described, but it is clear that the case is not limited to this.

_{For example, if T 1} <T ₂ is determined in step 3 of the second step, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined in step 3 of step 3 that T ₁ > T ₂ , the first sub-image can be made darker and the second sub-image can be made brighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved.

Further, in step 2, it is clear that the number J of the sub-images may be determined to be a value other than 2. Since the advantages in that case have already been described, detailed description thereof will be omitted here, but in step 1 of the second step, among the methods of distributing the brightness of the original image to a plurality of sub-images, the time-division gradation Clearly, it has similar advantages when the control method is selected. For example, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (J times the conversion ratio)) times the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described.

When the gamma complementation method is selected from the methods for distributing the brightness of the original image to a plurality of sub-images in the procedure 1 in the second step, the driving method is as follows.

The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially prepared at a constant period T.
The period T is divided into J (J is an integer of 2 or more) sub-image display periods.
The i-th image data is data capable of giving each of a plurality of pixels a unique brightness L.
Sub-image of the j (j is 1 or more J an integer) is constituted by pixels having a specific brightness L _j, respectively, are more juxtaposed, it is displayed by the sub-image display period T _j of the j It is an image
The L, the T, the L _j , and the T _j are driving methods of a display device satisfying the sub-image distribution condition.
In each sub-image, the characteristics of the change in brightness with respect to gradation are shifted from linear, and the total amount of brightness shifted from linear to bright and the total amount of brightness shifted from linear to dark are , It is characterized in that it is approximately equal in all gradations.
Here, as the image data sequentially prepared at a constant cycle T, the original image data created in the first step can be used. That is, all the display patterns mentioned in the description of the first step can be combined with the above-mentioned driving method.

It is clear that the above driving method can be carried out in combination for each of the various n and m used in the first step.

Then, when the number J of the sub-images is determined to be 2 in the procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in the procedure 3, the driving method is shown in FIG. 69. It will be something like.
Since the features and advantages of the driving method (display timing at various n and m) shown in FIG. 69 have already been described, detailed description thereof will be omitted here, but in step 1 in the second step, the brightness of the original image. Of the methods of distributing the image to a plurality of sub-images, it is clear that the same advantage is obtained even when the gamma complementation method is selected. For example, when the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Further, when the display frame rate is large, the quality of the moving image can be improved, and when the display frame rate is small, the power consumption and the manufacturing cost can be reduced. Further, when the display device is an active matrix type liquid crystal display device, the problem of insufficient writing voltage due to the dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect is brought about against obstacles such as trailing of moving images and afterimages. Furthermore, the flicker that appears due to AC drive can be reduced to the extent that it is not perceived by the human eye.

In step 1 of the second step, among the methods of distributing the brightness of the original image to a plurality of sub-images, the characteristic advantage of selecting the gamma complementation method is that an intermediate image is created by motion compensation. Since the operation of the circuit can be stopped or the circuit itself can be omitted from the device, the power consumption and the manufacturing cost of the device can be reduced. Further, since the impulse type display method can be used in a pseudo manner regardless of the gradation value included in the image data, the quality of the moving image can be improved. Further, the sub-image may be obtained by directly performing gamma conversion of the image data. In this case, there is an advantage that the gamma value can be controlled in various ways depending on the magnitude of the motion of the moving image. Further, the image data may not be directly gamma-converted, but a sub-image in which the gamma value is changed may be obtained by changing the reference voltage of the digital-to-analog conversion circuit (DAC). In this case, since the image data is not directly gamma-converted, the circuit that performs gamma conversion can be stopped or the circuit itself can be omitted from the device, so that power consumption and manufacturing cost of the device can be reduced. .. Further, in the gamma complement method, the change in brightness L _j of each sub-image with respect to gray scale follows a gamma curve, you can smoothly display the gradation respective sub image itself, and finally humans It also has the advantage of improving the quality of the image perceived by the eyes.

Here, the number J of the sub-images is determined to be 2 in the procedure 2, and T ₁ = in the procedure 3.
The _{case where it is determined that T 2} = T / 2 has been described, but it is clear that the case is not limited to this.

_{For example, if T 1} <T ₂ is determined in step 3 of the second step, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined in step 3 of step 3 that T ₁ > T ₂ , the first sub-image can be made darker and the second sub-image can be made brighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. In addition, like the above-mentioned driving method, procedure 1
In the method of distributing the brightness of the original image to a plurality of sub-images, when the gamma method is selected, the gamma value may be changed when the brightness of the sub-image is changed. That is, the gamma value may be determined according to the display timing of the second sub-image. By doing so, the circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the apparatus, so that the power consumption and the manufacturing cost of the apparatus can be reduced.

Further, in step 2, it is clear that the number J of the sub-images may be determined to be a value other than 2. Since the advantages in that case have already been described, detailed description thereof will be omitted here, but in step 1 of the second step, among the methods of distributing the brightness of the original image to a plurality of sub-images, the time-division gradation Clearly, it has similar advantages when the control method is selected. For example, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (J times the conversion ratio)) times the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described in detail.

In step 1 of the second step, a method of using the intermediate image obtained by motion compensation as a sub-image is selected.
In step 2 of the second step, the number of sub-images is determined to be 2.
If it is determined that T1 = T2 = T / 2 in step 3 in the second step, the second step
The driving method determined by the procedure in the step of is as follows.

The i-th (i is a positive integer) image data and
The i + 1th image data and the image data are sequentially prepared at a constant period T.
The image of the kth (k is a positive integer) and
The first k + 1 image and
It is a driving method of a display device that sequentially displays the k + 2 image and the image at an interval of 1/2 times the period of the original image data.
The k-th image is displayed according to the i-th image data, and is displayed.
The k + 1 image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the i-th image data to the i + 1 image data by 1/2.
The k + 2 image is displayed according to the i + 1 image data.
Here, as the image data sequentially prepared at a constant cycle T, the original image data created in the first step can be used. That is, all the display patterns mentioned in the description of the first step can be combined with the above-mentioned driving method.

It is clear that the above driving method can be carried out in combination for each of the various n and m used in the first step.

The characteristic advantage of selecting the method of using the intermediate image obtained by motion compensation as a sub-image in step 1 in the second step is that the intermediate image obtained by motion compensation is used in the procedure in the first step. In the case of an interpolated image, the method of obtaining the intermediate image used in the first step can be used as it is in the second step. That is, since the circuit for obtaining the intermediate image by motion compensation can be used not only in the first step but also in the second step, the circuit can be effectively used and the processing efficiency can be improved. In addition, since the movement of the image can be further smoothed, the quality of the moving image can be further improved.

Here, the number J of the sub-images is determined to be 2 in the procedure 2, and T ₁ = in the procedure 3.
The _{case where it is determined that T 2} = T / 2 has been described, but it is clear that the case is not limited to this.

_{For example, if T 1} <T ₂ is determined in step 3 of the second step, the first sub-image can be made brighter and the second sub-image can be made darker. In addition, the second
If it is determined in step 3 of step 3 that T ₁ > T ₂ , the first sub-image can be made darker and the second sub-image can be made brighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of the moving image can be improved. In addition, as in the above driving method, in step 2,
When the method of using the intermediate image obtained by motion compensation as the sub image is selected, the brightness of the sub image does not have to be changed. This is because the image in the intermediate state is completed as an image by itself, and even if the display timing of the second sub-image changes, it does not change as an image perceived by the human eye. In this case, since the circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the device, power consumption and manufacturing cost of the device can be reduced.

Further, in step 2, it is clear that the number J of the sub-images may be determined to be a value other than 2. Since the advantages in that case have already been described, detailed description thereof will be omitted here, but the same applies when the method of using the intermediate image obtained by motion compensation as the sub-image is selected in step 1 in the second step. It is clear that it has a great advantage. For example, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1 / (J times the conversion ratio)) times the cycle of the input image data.

Next, with reference to FIG. 71, a specific example of the frame rate conversion method when the input frame rate and the display frame rate are different will be described. In the methods shown in FIGS. 71 (A) to 71 (C), it is assumed that the circular region on the image is a region whose position changes depending on the frame, and the triangular region on the image is a region whose position is substantially unchanged by the frame. There is. However,
This is an example for explanation, and the displayed image is not limited to this. The methods of FIGS. 71 (A) to 71 (C) can be applied to various images.

FIG. 71A shows a case where the display frame rate is twice the input frame rate (conversion ratio is 2). When the conversion ratio is 2, there is an advantage that the quality of the moving image can be improved as compared with the case where the conversion ratio is smaller than 2. Further, when the conversion ratio is 2, there is an advantage that the power consumption and the manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 2. FIG. 71 (
A) schematically shows the state of temporal change of the displayed image with the horizontal axis as time. Here, the image of interest is referred to as the p-th image (p is a positive integer). Then, the image displayed next to the image of interest is the third (p + 1) image,
For the sake of convenience, the image displayed before the image of interest is displayed as the first (p-1) image, and so on, how far it is displayed from the image of interest. I will do it. Image 180701 is the pth image, image 180702 is the (p + 1) th image, image 180703 is the (p + 2) th image, and image 180704 is the (p + 3) th image, image 1.
It is assumed that 80705 is the third (p + 4) image. The period Tin represents the period of the input image data. Since FIG. 71 (A) shows a case where the conversion ratio is 2, the period Tin
Is twice as long as the period from the display of the p-th image to the display of the (p + 1) th image.

Here, the first (p + 1) image 180702 is the second (p + 2) from the first p image 180701.
The image may be created so as to be in an intermediate state between the first image 180701 and the (p + 2) image 180703 by detecting the amount of change in the image up to the image 180703. In FIG. 71 (A), the state of the image in the intermediate state is represented by a region whose position changes depending on the frame (circular region) and a region whose position hardly changes depending on the frame (triangular region). That is, the position of the circular region in the first (p + 1) image 180702 is an intermediate position between the position in the first p image 180701 and the position in the third (p + 2) image 180703. That is, the (p + 1) th image 180702 is obtained by interpolating the image data with motion compensation. In this way, it is possible to perform a smooth display by performing motion compensation on a moving object on the image and interpolating the image data.

Further, the first (p + 1) image 180702 is the first p image 180701 and the second (p + 2).
) May be an image in which the brightness of the image is controlled by a certain rule after being created so as to be in the intermediate state of the image 180703. The fixed rule is, for example, as shown in FIG. 71 (A), when the representative brightness of the first image 180701 is L and the representative brightness of the (p + 1) image 180702 is Lc. In Lc, there may be a relationship of L> Lc. Desirably
There may be a relationship of 0.1L <Lc <0.8L. More preferably, 0.2L <L
There may be a relationship of c <0.5L. Alternatively, conversely, L and Lc may have a relationship of L <Lc. Desirably, there may be a relationship of 0.1 Lc <L <0.8 Lc.
More preferably, there may be a relationship of 0.2 Lc <L <0.5 Lc. By doing so, the display can be pseudo-impulse type, so that afterimages of the eyes can be suppressed.

The typical brightness of the image will be described in detail later with reference to FIG. 72.

As you can see, there are two different causes for video blur (the movement of the image is not smooth,
And by solving the afterimage of the eyes at the same time, the moving image blur can be significantly reduced.

Further, regarding the third (p + 3) image 180704, the third (p + 2) image 180703 is also obtained.
And (p + 4) image 180705 may be created using a similar method. That is, the first (p + 3) image 180704 is the second (p + 2) images 180703 to the first (p).
By detecting the amount of change in the image up to the image 180705 of +4), the image 1 of the (p + 2) th
It may be an image created so as to be in an intermediate state between 80703 and the first (p + 4) image 180705, and further, an image in which the brightness of the image is controlled by a certain rule may be used.

FIG. 71B shows a case where the display frame rate is three times the input frame rate (conversion ratio is 3). FIG. 71B schematically shows how the displayed image changes with time, with the horizontal axis as time. Image 180711 is the first image, image 1807.
12 is the (p + 1) th image, image 180713 is the (p + 2) th image, image 180714.
Is the (p + 3) th image, image 180715 is the (p + 4) th image, image 180716 is the (p + 5) th image, and image 180717 is the (p + 6) th image. The period Tin represents the period of the input image data. Since FIG. 71 (B) shows a case where the conversion ratio is 3, the period Tin is three times the period from the display of the p-th image to the display of the (p + 1) th image. It becomes the length.

Here, the (p + 1) th image 180712 and the (p + 2) th image 180713 detect the amount of change in the images from the pth image 180711 to the (p + 3) th image 180714, thereby detecting the change amount of the pth image 180711. And the image created so as to be in the intermediate state of the third (p + 3) image 180714. In FIG. 71 (B), the state of the image in the intermediate state is represented by a region whose position changes depending on the frame (circular region) and a region whose position hardly changes depending on the frame (triangular region). That is, the position of the circular region in the first (p + 1) image 180712 and the (p + 2) image 180713 is an intermediate position between the position in the first p image 180711 and the position in the third (p + 3) image 180714. Specifically, when the amount of movement of the circular region detected from the first p image 180711 and the (p + 3) image 180714 is X, the position of the circular region in the first (p + 1) image 180712 is The position may be displaced by about (1/3) X from the position in the first image 180711. Furthermore, the first (p + 2) image 1807
The position of the circular region in 13 is (2/3) from the position in the first image 180711.
) It may be a position displaced by about X. That is, the (p + 1) th image 180712 and the (p + 2) th image 180713 are motion-compensated and interpolated image data. In this way, it is possible to perform a smooth display by performing motion compensation on a moving object on the image and interpolating the image data.

Further, the first (p + 1) image 180712 and the (p + 2) image 180713 are created so as to be in an intermediate state between the first p image 180711 and the third (p + 3) image 180714, and the brightness of the images is constant. It may be an image controlled by the rule of. The constant rule is that, for example, as shown in FIG. 71 (B), the typical brightness of the image 180711 of the first p is set to L, and the th (
The typical brightness of the image 180712 of p + 1) is Lc1, and the image 180713 of the third (p + 2)
When the typical brightness of Lc2 is Lc2, L> Lc1 or L in L, Lc1 and Lc2.
There may be a relationship of> Lc2 or Lc1 = Lc2. Desirably, 0.1 L <Lc
There may be a relationship of 1 = Lc2 <0.8L. More preferably, 0.2L <Lc =
There may be a relationship of Lc2 <0.5L. Alternatively, conversely, in L, Lc1 and Lc2, there may be a relationship of L <Lc1 or L <Lc2 or Lc1 = Lc2. Desirably, there may be a relationship of 0.1Lc1 = 0.1Lc2 <L <0.8Lc1 = 0.8Lc2. More preferably, 0.2Lc1 = 0.2Lc2 <L <0.5Lc1 = 0.5
There may be a relationship of Lc2. By doing so, the display can be pseudo-impulse type, so that afterimages of the eyes can be suppressed. Alternatively, images with varying brightness may appear alternately. By doing so, the period in which the brightness changes can be shortened, so that flicker can be reduced.

As you can see, there are two different causes for video blur (the movement of the image is not smooth,
And by solving the afterimage of the eyes at the same time, the moving image blur can be significantly reduced.

Further, the (p + 4) th image 180715 and the (p + 5) th image 180716 may also be created from the (p + 3) th image 180714 and the (p + 6) th image 180717 using the same method. That is, the (p + 4) th image 180715 and the (p + 5) th image 180716 detect the amount of change in the images from the (p + 3) th image 180714 to the (p + 6) th (p + 6) image 180717, whereby the (p + 3) th image Image 18071
It may be an image created so as to be in an intermediate state between the fourth and (p + 6) images 180717, and further, an image in which the brightness of the image is controlled by a certain rule.

When the method of FIG. 71 (B) is used, since the display frame rate is large, the movement of the image can follow the movement of the eyes well, and the movement of the image can be displayed smoothly, so that the moving image is blurred. Can be significantly reduced.

In FIG. 71 (C), the display frame rate is 1.5 times the input frame rate (conversion ratio 1.5).
). FIG. 71 (C) schematically shows the state of temporal changes in the displayed image with the horizontal axis as time. Image 180721 is the first image, image 1
80722 is the (p + 1) th image, image 180723 is the (p + 2) th image, image 180
It is assumed that 724 is the third (p + 3) image. Although it is not necessary to actually display the image 180725, the image 180725 is input image data, and the (p + 1) th image 180722 and the (p + 1) th image 180722.
It may be used to create the image 180723 of +2). The period Tin represents the period of the input image data. Since FIG. 71 (C) shows a case where the conversion ratio is 1.5, the period Tin is 1 of the period from the display of the p-th image to the display of the (p + 1) th image. It will be 5.5 times longer.

Here, the (p + 1) th image 180722 and the (p + 2) th image 180723 are the (p + 3) th image 180724 from the pth image 180721 via the image 180725.
The image may be created so as to be in an intermediate state between the first image 180721 and the (p + 3) image 180724 by detecting the amount of change in the images up to. In FIG. 71 (C), the state of the image in the intermediate state is represented by a region whose position changes depending on the frame (circular region) and a region whose position hardly changes depending on the frame (triangular region).
That is, the position of the circular region in the first (p + 1) image 180722 and the (p + 2) image 180723 is an intermediate position between the position in the first p image 180721 and the position in the third (p + 3) image 180724. That is, the first (p + 1) image 180
The 722 and the (p + 2) th image 180723 are motion-compensated and interpolated image data. In this way, it is possible to perform a smooth display by performing motion compensation on a moving object on the image and interpolating the image data.

Further, the first (p + 1) image 180722 and the (p + 2) image 180723 are created so as to be in an intermediate state between the first p image 180721 and the third (p + 3) image 180724, and the brightness of the images is constant. It may be an image controlled by the rule of. A certain rule is that, for example, as shown in FIG. 71 (C), the typical brightness of the image 180721 of the first p is L, and the th (
The typical brightness of the image 180722 of p + 1) is Lc1, and the image 180723 of the third (p + 2)
When the typical brightness of Lc2 is Lc2, L> Lc1 or L in L, Lc1 and Lc2.
There may be a relationship of> Lc2 or Lc1 = Lc2. Desirably, 0.1 L <Lc
There may be a relationship of 1 = Lc2 <0.8L. More preferably, 0.2L <Lc =
There may be a relationship of Lc2 <0.5L. Alternatively, conversely, in L, Lc1 and Lc2, there may be a relationship of L <Lc1 or L <Lc2 or Lc1 = Lc2. Desirably, there may be a relationship of 0.1Lc1 = 0.1Lc2 <L <0.8Lc1 = 0.8Lc2. More preferably, 0.2Lc1 = 0.2Lc2 <L <0.5Lc1 = 0.5
There may be a relationship of Lc2. By doing so, the display can be pseudo-impulse type, so that afterimages of the eyes can be suppressed. Alternatively, images with varying brightness may appear alternately. By doing so, the period in which the brightness changes can be shortened, so that flicker can be reduced.

As you can see, there are two different causes for video blur (the movement of the image is not smooth,
And by solving the afterimage of the eyes at the same time, the moving image blur can be significantly reduced.

When the method of FIG. 71 (C) is used, since the display frame rate is small, the time for writing the signal to the display device can be lengthened. Therefore, the clock frequency of the display device can be reduced, so that the power consumption can be reduced. Further, since the processing speed for motion compensation can be slowed down, the power consumption can be reduced.

Next, with reference to FIG. 72, the typical brightness of the image will be described. FIGS. 72 (A) to 72 (D)
) Is a schematic representation of the temporal change of the displayed image with the horizontal axis as time. FIG. 72 (E) is an example of a method of measuring the brightness of an image in a certain area.

As a method of measuring the brightness of an image, there is a method of individually measuring the brightness of each pixel constituting the image. Using this method, it is possible to measure the brightness precisely in every detail of the image.

However, since the method of individually measuring the brightness of each pixel constituting the image requires a great deal of labor, another method may be used. Another method of measuring the brightness of an image is to focus on a certain area in the image and measure the average brightness of that area. By this method, the brightness of the image can be easily measured. In the present embodiment, the brightness obtained by the method of measuring the average brightness of a certain area in the image is referred to as a representative brightness of the image for convenience.

Then, in order to obtain the typical brightness of the image, the point of paying attention to which region in the image will be described below.

FIG. 72A shows an example of a method in which the brightness of a region (triangular region) whose position hardly changes with respect to a change in the image is set as a typical brightness of the image. The period Tin is the period of the input image data, the image 180801 is the p-th image, the image 180802 is the (p + 1) th image, and the image 18.
0803 is the third (p + 2) image, the first region 180804 is the luminance measurement region in the first p image 180801, the second region 180805 is the luminance measurement region in the first (p + 1) image 180802, and the third region 180806 is the third. The luminance measurement regions in the image 180803 of (p + 2) are represented respectively. Here, the first to third regions may be substantially the same as the spatial positions in the apparatus. That is, by measuring the typical brightness of the image in the first to third regions, it is possible to obtain the time change of the typical brightness of the image.

By measuring the typical brightness of the image, it is possible to determine whether or not the display is pseudo-impulse type. For example, the brightness measured in the first region 180804 is L,
When the brightness measured in the second region 180805 is Lc, if Lc <L, it can be said that the display is a pseudo impulse type. At such times, it can be said that the quality of the moving image is improving.

In the luminance measurement region, the image quality can be improved when the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. The relative brightness of, for example, is larger than that of the first region 180804 and the second region 180805, the second region 180805 and the third region 180806, and the first region 180804 and the third region 180806, respectively. It can be the ratio of the smaller brightness to the brightness. That is, when the amount of change in the typical brightness of the image with respect to the change in time is 0, the relative brightness is 100%. When the relative brightness is 80% or less, the quality of the moving image can be improved. In particular, when the relative brightness is 50% or less, the quality of the moving image can be remarkably improved. Further, when the relative brightness is 10% or more, the power consumption can be reduced and the flicker can be suppressed. In particular, the relative brightness is 2.
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
When the relative brightness is 10% or more and 80% or less, the quality of the moving image can be improved and the power consumption and flicker can be reduced. Further, when the relative brightness is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and the flicker can be remarkably reduced.

FIG. 72B shows an example of a method of measuring the brightness of a tiled region and using the average value as a typical brightness of an image. Period Tin is the cycle of input image data, image 1808
11 is the p-th image, image 180812 is the (p + 1) th image, and image 180813 is the (p + 1) th image.
The image of +2), the first region 180814 is the luminance measurement region in the first image 180811, the second region 180815 is the luminance measurement region in the third (p + 1) image 180812, and the third region 180816 is the (p + 2) th. Each of the luminance measurement regions in the image 180813 is represented. Here, the first to third regions may be substantially the same as the spatial positions in the apparatus. That is, by measuring the typical brightness of the image in the first to third regions, it is possible to obtain the time change of the typical brightness of the image.

By measuring the typical brightness of the image, it is possible to determine whether or not the display is pseudo-impulse type. For example, when the average value in all regions of the brightness measured in the first region 180814 is L and the average value in all regions of the brightness measured in the second region 180815 is Lc, Lc <L. For example, it can be said that the display is pseudo-impulse type. At such times, it can be said that the quality of the moving image is improving.

In the luminance measurement region, the image quality can be improved when the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. The relative brightness of, for example, is larger than that of the first region 180814 and the second region 180815, the second region 180815 and the third region 180816, and the first region 180814 and the third region 180816, respectively. It can be the ratio of the smaller brightness to the brightness. That is, when the amount of change in the typical brightness of the image with respect to the change in time is 0, the relative brightness is 100%. When the relative brightness is 80% or less, the quality of the moving image can be improved. In particular, when the relative brightness is 50% or less, the quality of the moving image can be remarkably improved. Further, when the relative brightness is 10% or more, the power consumption can be reduced and the flicker can be suppressed. In particular, the relative brightness is 2.
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
When the relative brightness is 10% or more and 80% or less, the quality of the moving image can be improved and the power consumption and flicker can be reduced. Further, when the relative brightness is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and the flicker can be remarkably reduced.

FIG. 72C shows an example of a method of measuring the brightness of the central region of an image and using the average value as a typical brightness of the image. The period Tin is the period of the input image data, the image 180821 is the pth image, the image 180822 is the (p + 1) th image, the image 180823 is the (p + 2) th image, and the first region 180824 is the brightness in the pth image 180821. The measurement area, the second area 180825 represents the brightness measurement area in the first (p + 1) image 180822, and the third area 180826 represents the brightness measurement area in the third (p + 2) image 180823, respectively.

By measuring the typical brightness of the image, it is possible to determine whether or not the display is pseudo-impulse type. For example, the brightness measured in the first region 180824 is L,
When the brightness measured in the second region 180825 is Lc, if Lc <L, it can be said that the display is a pseudo impulse type. At such times, it can be said that the quality of the moving image is improving.

In the luminance measurement region, the image quality can be improved when the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. The relative brightness of, for example, is larger than that of the first region 180824 and the second region 180825, the second region 180825 and the third region 180826, and the first region 180824 and the third region 180824, respectively. It can be the ratio of the smaller brightness to the brightness. That is, when the amount of change in the typical brightness of the image with respect to the change in time is 0, the relative brightness is 100%. When the relative brightness is 80% or less, the quality of the moving image can be improved. In particular, when the relative brightness is 50% or less, the quality of the moving image can be remarkably improved. Further, when the relative brightness is 10% or more, the power consumption can be reduced and the flicker can be suppressed. In particular, the relative brightness is 2.
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
When the relative brightness is 10% or more and 80% or less, the quality of the moving image can be improved and the power consumption and flicker can be reduced. Further, when the relative brightness is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and the flicker can be remarkably reduced.

FIG. 72 (D) shows an example of a method of measuring the brightness of a plurality of points sampled from the entire image and using the average value as a typical brightness of the image. Period Tin is the cycle of input image data,
Image 180831 is the p-th image, image 180832 is the (p + 1) th image, image 1808.
33 is the third (p + 2) image, the first region 180834 is the luminance measurement region in the first p image 180831, the second region 180835 is the luminance measurement region in the first (p + 1) image 180832, and the third region 180836 is the third. The luminance measurement areas in the image 180833 of (p + 2) are represented respectively.

By measuring the typical brightness of the image, it is possible to determine whether or not the display is pseudo-impulse type. For example, when the average value in all regions of the brightness measured in the first region 180834 is L and the average value in all regions of the brightness measured in the second region 180835 is Lc, Lc <L. For example, it can be said that the display is pseudo-impulse type. At such times, it can be said that the quality of the moving image is improving.

In the luminance measurement region, the image quality can be improved when the typical luminance change amount (relative luminance) of the image with respect to the time change is in the following range. The relative brightness of, for example, is larger than that of the first region 180834 and the second region 180835, the second region 180835 and the third region 180836, and the first region 180834 and the third region 180836, respectively. It can be the ratio of the smaller brightness to the brightness. That is, when the amount of change in the typical brightness of the image with respect to the change in time is 0, the relative brightness is 100%. When the relative brightness is 80% or less, the quality of the moving image can be improved. In particular, when the relative brightness is 50% or less, the quality of the moving image can be remarkably improved. Further, when the relative brightness is 10% or more, the power consumption can be reduced and the flicker can be suppressed. In particular, the relative brightness is 2.
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
When the relative brightness is 10% or more and 80% or less, the quality of the moving image can be improved and the power consumption and flicker can be reduced. Further, when the relative brightness is 20% or more and 50% or less, the quality of the moving image can be remarkably improved, and the power consumption and the flicker can be remarkably reduced.

FIG. 72 (E) is a diagram showing a measurement method in the luminance measurement region in the figures shown in FIGS. 72 (A) to 72 (D). The region 180841 is a luminance measurement region of interest, and the point 180842 is a luminance measurement point in the region 180841. A luminance measuring device having a high time resolution may have a small measurement target range. Therefore, when the area 180841 is large, the area 180841 is pointed as shown in FIG. 72 (E) instead of measuring the entire area. It may be measured at a plurality of points without any bias in a shape, and the average value thereof may be used as the brightness of the region 180841.

When the image has a combination of the three primary colors R, G, and B, the measured brightness is R, G.
, B may be combined, R and G may be combined, G and B may be combined, B and R may be combined, and R, G, and B may be combined. It may be brightness.

Next, how to detect the movement of the image included in the input image data and create an image in the intermediate state,
A method of controlling the driving method according to the movement of the image included in the input image data and the like will be described.

An example of a method of detecting the movement of an image included in the input image data and creating an image in an intermediate state will be described with reference to FIG. 73. FIG. 73A shows a case where the display frame rate is twice the input frame rate (conversion ratio is 2). FIG. 73A schematically shows a method of detecting the movement of an image with the horizontal axis as time. The period Tin is the period of the input image data, the image 180901 is the p-th image, and the image 180902 is the (p + 1) th (p + 1).
Image and image 180903 represent the (p + 2) th image, respectively. In addition, a first region 180904, a second region 180905, and a third region 180906 are provided as time-independent regions in the image.

First, in the third (p + 2) image 180903, the image is divided into a plurality of tile-shaped regions, and attention is paid to the image data in the third region 180906, which is one of the regions.

Next, in the third image 180901, attention is paid to a range larger than the third region 180906 centered on the third region 180906. Here, a range larger than the third region 180906 centered on the third region 180906 is a data search range. The data search range is 180907 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
It is set to 08. The horizontal range 180907 and the vertical range 180908 of the data search range may be a range obtained by expanding the horizontal range and the vertical range of the third region 180906 by about 15 pixels, respectively.

Then, within the data search range, an area having image data most similar to the image data in the third area 180906 is searched. As the search method, a least squares method or the like can be used. As a result of the search, as the area having the most similar image data, the first area 18090
It is assumed that 4 is derived.

Next, the vector 180909 is derived as a quantity representing the difference in position between the derived first region 180904 and the third region 180906. The vector 180909 will be referred to as a motion vector.

Then, in the first (p + 1) image 180902, the vector obtained from the motion vector 180909, the image data in the third region 180906 in the third (p + 2) image 180903, and the first region in the first p image 180901. A second region 180905 is formed by the image data in 180904.

Here, the vector obtained from the motion vector 180909 is called the displacement vector 180910. The displacement vector 180910 serves to determine the position forming the second region 180905. The second region 180905 is formed at a position separated from the third region 180906 by the displacement vector 180910. The displacement vector 180910 may be an amount obtained by multiplying the motion vector 180909 by a coefficient (1/2).

The image data in the second region 180905 in the third (p + 1) image 180902 includes the image data in the third region 180906 in the third (p + 2) image 180903 and the p.
It may be determined by the image data in the first region 180904 in the image 180901. For example, the second region 1809 in the second (p + 1) image 180902.
The image data in 05 is the third region 18090 in the third (p + 2) image 180903.
It may be the average value of the image data in 6 and the image data in the first region 180904 in the first image 180901.

In this way, the second region 180905 in the third (p + 1) image 180902 can be formed corresponding to the third region 180906 in the third (p + 2) image 180903. By performing the above processing in other regions of the (p + 2) image 180903, the second (p + 1) image 180902 is in an intermediate state between the (p + 2) image 180903 and the p-th image 180901. Can be formed.

FIG. 73B shows a case where the display frame rate is three times the input frame rate (conversion ratio is 3). FIG. 73B schematically shows a method of detecting the movement of an image with the horizontal axis as time. Period Tin is the cycle of input image data, image 1809
11 is the p-th image, image 180912 is the (p + 1) th image, and image 180913 is the (p + 1) th image.
The image of +2) and the image 180914 represent the image of the third (p + 3), respectively. Also,
In the image, the first region 180915 and the second region 1809 are time-independent regions.
16. A third region 180917 and a fourth region 180918 are provided.

First, in the third (p + 3) image 180914, the image is divided into a plurality of tile-shaped regions, and attention is paid to the image data in the fourth region 180918, which is one of the regions.

Next, in the first image 180911, attention is paid to a range larger than the fourth region 180918 centered on the fourth region 180918. Here, a range larger than the fourth region 180918 centered on the fourth region 180918 is a data search range. The data search range is 180919 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
It is set to 20. The horizontal range 180919 and the vertical range 180920 of the data search range may be a range obtained by expanding the horizontal range and the vertical range of the fourth region 180918 by about 15 pixels, respectively.

Then, within the data search range, an area having image data most similar to the image data in the fourth area 180918 is searched. As the search method, a least squares method or the like can be used. As a result of the search, as the area having the most similar image data, the first area 18091
It is assumed that 5 is derived.

Next, a vector is derived as a quantity representing the difference in position between the derived first region 180915 and the fourth region 180918. In addition, this vector is used as a motion vector 180921.
I will call it.

Then, in the first (p + 1) image 180912 and the (p + 2) image 180913, the first vector and the second vector obtained from the motion vector 180921 are
The image data in the fourth region 180918 in the third (p + 3) image 180914 and the image data in the first region 180915 in the first image 180911 make the second region 180916 and the third region 180917. Form.

Here, the first vector obtained from the motion vector 180921 is used as the first displacement vector 18.
I will call it 0922. Further, the second vector will be referred to as a second displacement vector 180923. The first displacement vector 180922 serves to determine the position forming the second region 180916. The second region 180916 is formed at a position separated from the fourth region 180918 by the first displacement vector 180922. The first displacement vector 180922 may be an amount obtained by multiplying the motion vector 180921 by (1/3). Further, the second displacement vector 180923 has a role of determining a position for forming the third region 180917. The third region 180917 is formed at a position separated from the fourth region 180918 by a second displacement vector 180923. The second displacement vector 180923
May be the amount obtained by multiplying the motion vector 180921 by (2/3).

The image data in the second region 180916 in the first (p + 1) image 180912 is the image data in the fourth region 180918 in the third (p + 3) image 180914 and the p.
It may be determined by the image data in the first region 180915 in the image 180911. For example, the second region 1809 in the first (p + 1) image 180912.
The image data in 16 is the fourth region 18091 in the third (p + 3) image 180914.
It may be the average value of the image data in 8 and the image data in the first region 180915 in the first image 180911.

The image data in the third region 180917 in the third (p + 2) image 180913 is the image data in the fourth region 180918 in the third (p + 3) image 180914 and the p.
It may be determined by the image data in the first region 180915 in the image 180911. For example, the third region 1809 in the third (p + 2) image 180913.
The image data in 17 is the fourth region 18091 in the third (p + 3) image 180914.
It may be the average value of the image data in 8 and the image data in the first region 180915 in the first image 180911.

In this way, the second region 180916, and the second (p + 1) image 180902, which correspond to the fourth region 180918 in the (p + 3) image 180914.
A third region 180917 in image 180913 of p + 2) can be formed.
By performing the above processing in other regions of the (p + 3) image 180914, an intermediate state between the (p + 3) image 180914 and the p-th image 180911 is obtained.
Image 180912 of p + 1) and image 180913 of the second (p + 2) can be formed.

Next, with reference to FIG. 74, an example of a circuit that detects the movement of the image included in the input image data and creates an image in the intermediate state will be described. FIG. 74A is a diagram showing a connection relationship between a peripheral drive circuit including a source driver and a gate driver for displaying an image in a display area and a control circuit for controlling the peripheral drive circuit. FIG. 74 (B) is a diagram showing an example of a detailed circuit configuration of the control circuit. FIG. 74C is a diagram showing an example of a detailed circuit configuration of the image processing circuit included in the control circuit. FIG. 74 (D) is a diagram showing another example of a detailed circuit configuration of the image processing circuit included in the control circuit.

As shown in FIG. 74 (A), the apparatus according to the present embodiment may include a control circuit 181011, a source driver 181012, a gate driver 181013, and a display area 181014.

The control circuit 181011, the source driver 181012, and the gate driver 181
013 may be formed on the same substrate as the substrate on which the display region 181014 is formed.

The control circuit 181011, the source driver 181012, and the gate driver 181
In 013, a part of them is formed on the same substrate as the substrate on which the display region 181014 is formed, and the other circuits are formed on a substrate different from the substrate on which the display region 181014 is formed. You may be. For example, the source driver 181012 and the gate driver 181013 may be formed on the same substrate as the substrate on which the display region 181014 is formed, and the control circuit 181011 may be formed as an external IC on a different substrate. Similarly, the gate driver 181013 may be formed on the same substrate as the substrate on which the display region 181014 is formed, and the other circuits may be formed as external ICs on a different substrate. Similarly, a part of the source driver 181012, the gate driver 181013 and the control circuit 181011 is formed on the same substrate as the substrate on which the display area 181014 is formed, and the other circuits are formed as external ICs on different substrates. It may have been done.

The control circuit 181011 includes an external image signal 181000, a horizontal synchronization signal 181001, and the like.
The vertical sync signal 181002 is input, and the image signal 181003, the source start pulse 181004, the source clock 181005, and the gate start pulse 18100 are input.
6 and the gate clock 181007 may be output.

The source driver 181012 has an image signal 181003 and a source start pulse 181.
004 and the source clock 181005 may be input, and the voltage or current according to the image signal 181003 may be output to the display area 181014.

The gate driver 181013 may be configured such that a gate start pulse 181006 and a gate clock 181007 are input, and a signal specifying a timing for writing a signal output from the source driver 181012 to the display area 181014 is output.

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the signals that control the timing of driving the source driver 181012 and the gate driver 181013 are also input horizontal synchronization signals 181001 and vertical synchronization signals 1810.
It will have a different frequency from 02. Therefore, in addition to the processing of the image signal 181003, it is necessary to process the signal for controlling the timing of driving the source driver 181012 and the gate driver 181013. The control circuit 181011 may be a circuit having a function for that purpose. For example, when the frequency of the image signal 181003 is doubled with respect to the frequency of the external image signal 181000, the control circuit 181011 determines the external image signal 18
The image signal included in 1000 is interpolated to generate an image signal 181003 having a double frequency, and the timing control signal is also controlled to have a double frequency.

Further, the control circuit 181011 includes the image processing circuit 181015 and the image processing circuit 181015 as shown in FIG. 74 (B).
The timing generation circuit 181016 and the like may be included.

The image processing circuit 181015 includes an external image signal 181000 and a frequency control signal 18100.
8 and may be input and the image signal 181003 may be output.

The timing generation circuit 181016 has a horizontal synchronization signal 181001 and a vertical synchronization signal 181.
002 and are input, the source start pulse 181004 and the source clock 1810
05, a gate start pulse 181006, a gate clock 181007, and a frequency control signal 181008 may be output. The timing generation circuit 181016 may include a memory, a register, or the like that holds data for designating the state of the frequency control signal 181008. Further, the timing generation circuit 181016 may be configured such that a signal specifying the state of the frequency control signal 181008 is input from the outside.

As shown in FIG. 74C, the image processing circuit 181015 includes a motion detection circuit 181020, a first memory 181021, a second memory 181022, a third memory 181023, a brightness control circuit 181024, and high-speed processing. Circuit 181025 and may be included.

The motion detection circuit 181020 may be configured such that a plurality of image data are input, motion of the image is detected, and image data which is an intermediate state of the plurality of image data is output.

An external image signal 181000 is input to the first memory 181021, and the motion detection circuit 181020 and the second memory 1810 are held while holding the external image signal 181000 for a certain period of time.
The external image signal 181000 may be output to 22.

The second memory 181022 is configured to input the image data output from the first memory 181021 and output the image data to the motion detection circuit 181020 and the high-speed processing circuit 181025 while holding the image data for a certain period of time. There may be.

The third memory 181023 may be configured such that the image data output from the motion detection circuit 181020 is input and the image data is output to the luminance control circuit 181024 while holding the image data for a certain period of time.

The high-speed processing circuit 181025 contains the image data output from the second memory 181022 and the image data.
The image data output from the luminance control circuit 181024 and the frequency control signal 181008 may be input, and the image data may be output as the image signal 181003.

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the image processing circuit 181015 may interpolate the image signal included in the external image signal 181000 to generate the image signal 181003. Input external image signal 18100
0 is temporarily held in the first memory 181021. At that time, the second memory 18102
The image data input in the previous frame is held in 2. Motion detection circuit 18
The 1020 appropriately reads the image data held in the first memory 181021 and the second memory 181022, detects a motion vector from the difference between the two image data, and further
Image data in the intermediate state may be generated. The generated image data in the intermediate state is held by the third memory 181023.

When the motion detection circuit 181020 is generating image data in the intermediate state, the high-speed processing circuit 1
The 81025 uses the image data stored in the second memory 181022 as an image signal 18
Output as 1003. After that, the image data held in the third memory 181023 is output as the image signal 181003 through the luminance control circuit 181024. At this time, the frequency at which the second memory 181022 and the third memory 181023 are updated is the same as the frequency of the external image signal 181000, but the frequency of the image signal 181003 output through the high-speed processing circuit 181025 is the frequency of the external image signal 181000. It may be different from the frequency. Specifically, for example, the frequency of the image signal 181003 is the external image signal 181000.
1.5 times, 2 times, and 3 times the frequency of. However, the frequency is not limited to this, and various frequencies can be used. The frequency of the image signal 181003 may be specified by the frequency control signal 181008.

The configuration of the image processing circuit 181015 shown in FIG. 74 (D) is the configuration of the image processing circuit 181015 shown in FIG. 74 (C) with the addition of a fourth memory 181026. In this way, the image data output from the first memory 181021 and the second memory 181022.
By outputting the image data output from the fourth memory 181026 to the motion detection circuit 181020 in addition to the image data output from, it becomes possible to accurately detect the motion of the image.

If the input image data already contains a motion vector for data compression or the like, for example, MPEG (Moving Picture Expert Gr).
When the image data is based on the standard of up), the image in the intermediate state may be generated as an interpolated image by using the image data. At this time, the part that generates the motion vector, which is included in the motion detection circuit 181020, becomes unnecessary. Further, since the encoding and decoding processing related to the image signal 181003 is also simplified, the power consumption can be reduced.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 6)
In the present embodiment, the peripheral portion of the liquid crystal panel will be described.

FIG. 75 shows a backlight unit 20101 called an edge light type and a liquid crystal panel 2.
An example of a liquid crystal display device having 0107 is shown. The edge light type is a method in which a light source is arranged at the end of the backlight unit and the fluorescence of the light source is radiated from the entire light emitting surface.
The edge light type backlight unit is thin and can save power.

The backlight unit 20101 includes a diffuser plate 20102, a light guide plate 20103, and a reflector 20.
It is composed of 104, a lamp reflector 20105, and a light source 20106.

The light source 20106 has a function of emitting light as needed. For example, as the light source 20106, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20105 has a function of efficiently guiding the fluorescence from the light source 20106 to the light guide plate 20103. The light guide plate 20103 has a function of totally reflecting fluorescence and guiding light over the entire surface. The diffuser plate 20102 has a function of reducing unevenness in brightness. The reflector 20104
It has a function of reflecting and reusing the light leaked downward from the light guide plate 20103 (the direction opposite to the liquid crystal panel 20107).

A control circuit for adjusting the brightness of the light source 20106 is connected to the backlight unit 20101. The brightness of the light source 20106 can be adjusted by this control circuit.

76 (A), (B), (C) and (D) are diagrams showing a detailed configuration of an edge light type backlight unit. The description of the diffuser plate, the light guide plate, the reflector, and the like will be omitted.

The backlight unit 20201 shown in FIG. 76 (A) has a cold cathode tube 20203 as a light source.
It is a configuration using. Then, in order to efficiently reflect the light from the cold cathode tube 20203,
A lamp reflector 2022 is provided. Such a configuration is often used in a large display device because of the intensity of the brightness from the cold-cathode tube.

The backlight unit 20211 shown in FIG. 76 (B) has a light emitting diode (L) as a light source.
ED) This is a configuration using 20213. For example, a light emitting diode (LED) that emits white light.
20213 are arranged at predetermined intervals. A lamp reflector 20212 is provided in order to efficiently reflect the light from the light emitting diode (LED) 20213.

Since the brightness of the light emitting diode is high, the configuration using the light emitting diode is suitable for a large display device. Since the light emitting diode has excellent color reproducibility, it can display an image closer to the real thing. Since the LED has a small chip, the arrangement area can be reduced. Therefore, the frame of the display device can be narrowed.

When the light emitting diode is mounted on a large display device, the light emitting diode can be arranged on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. Color reproducibility can be improved by arranging the light emitting diodes.

The backlight unit 20221 shown in FIG. 76C has a configuration in which a light emitting diode (LED) 20223, a light emitting diode (LED) 20224, and a light emitting diode (LED) 20225 of each color RGB are used as a light source. Light emitting diode (LED) 20 of each color RGB
The 223, the light emitting diode (LED) 20224, and the light emitting diode (LED) 20225 are arranged at predetermined intervals, respectively. Light emitting diode (LED) 20223 of each color RGB
By using the light emitting diode (LED) 20224 and the light emitting diode (LED) 20225, the color reproducibility can be improved. A lamp reflector 20222 is provided in order to efficiently reflect the light from the light emitting diode.

Since the brightness of the light emitting diode is high, a configuration using a light emitting diode of each color RGB as a light source is suitable for a large display device. Since the light emitting diode has excellent color reproducibility, it can display an image closer to the real thing. Since the LED has a small chip, the arrangement area can be reduced.
Therefore, the frame of the display device can be narrowed.

Color display can be performed by sequentially turning on the RGB light emitting diodes according to the time. This is the so-called field sequential mode.

A light emitting diode that emits white and a light emitting diode (LED) 2022 of each color RGB.
3. A light emitting diode (LED) 20224 and a light emitting diode (LED) 20225 can be combined.

When the light emitting diode is mounted on a large display device, the light emitting diode can be arranged on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. Color reproducibility can be improved by arranging the light emitting diodes.

The backlight unit 20231 shown in FIG. 77 (D) has a configuration in which a light emitting diode (LED) 20233, a light emitting diode (LED) 20234, and a light emitting diode (LED) 20235 of each color RGB are used as a light source. For example, each color RGB light emitting diode (LE)
D) 20233, light emitting diode (LED) 20234, light emitting diode (LED) 20
Of the 235, a plurality of colors having low emission intensity (for example, green) are arranged. Color reproducibility can be improved by using a light emitting diode (LED) 20233, a light emitting diode (LED) 20234, and a light emitting diode (LED) 20235 of each color RGB. A lamp reflector 20232 is provided to efficiently reflect the light from the light emitting diode.

Since the brightness of the light emitting diode is high, a configuration using a light emitting diode of each color RGB as a light source is suitable for a large display device. Since the light emitting diode has excellent color reproducibility, it can display an image closer to the real thing. Since the LED has a small chip, the arrangement area can be reduced.
Therefore, the frame of the display device can be narrowed.

Color display can be performed by sequentially turning on the RGB light emitting diodes according to the time. This is the so-called field sequential mode.

A light emitting diode that emits white and a light emitting diode (LED) 2023 of each color RGB.
3. A light emitting diode (LED) 20234 and a light emitting diode (LED) 20235 can be combined.

When the light emitting diode is mounted on a large display device, the light emitting diode can be arranged on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. Color reproducibility can be improved by arranging the light emitting diodes.

FIG. 79 (A) shows an example of a liquid crystal display device having a backlight unit called a direct type and a liquid crystal panel. The direct type is a method in which a light source is arranged directly under the light emitting surface and the fluorescence of the light source is radiated from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20500 is composed of a diffuser plate 20501, a light shielding plate 20502, a lamp reflector 20503, and a light source 20504.

The light emitted from the light source 20504 is collected on one surface of the backlight unit 20500 by the lamp reflector 20503. That is, the backlight unit 2050
0 has a surface that emits strong light and a surface that emits almost no light. At this time, by arranging the liquid crystal panel 20505 on the side of the backlight unit 20500 that strongly emits light, the light emitted from the light source 20504 can be efficiently irradiated to the liquid crystal panel 20505.

The light source 20504 has a function of emitting light as needed. For example, as the light source 20504, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20503 has a function of efficiently guiding the fluorescence of the light source 20504 to the diffuser plate 20501 and the light-shielding plate 20502. The light-shielding plate 20502 has a function of reducing unevenness in brightness by increasing the amount of light-shielding in a place where the light is stronger according to the arrangement of the light source 20504. The diffuser plate 20501 further has a function of reducing unevenness in brightness.

A control circuit for adjusting the brightness of the light source 20504 is connected to the backlight unit 20500. The brightness of the light source 20504 can be adjusted by this control circuit.

FIG. 79B shows an example of a liquid crystal display device having a backlight unit called a direct type and a liquid crystal panel. The direct type is a method in which a light source is arranged directly under the light emitting surface and the fluorescence of the light source is radiated from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20510 is composed of a diffuser plate 20511, a light-shielding plate 20512, a lamp reflector 20513, a light source (R) 20514a of each color RGB, a light source (G) 20514b, and a light source (B) 20514c.

The light emitted from the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c is collected on one surface of the backlight unit 20510 by the lamp reflector 20513. That is, the backlight unit 20510 has a surface that emits strong light and a surface that emits almost no light. At this time, the backlight unit 20510
By arranging the liquid crystal panel 20515 on the surface side that emits strong light, the light source (R) 205
The liquid crystal panel 20515 can be efficiently irradiated with the light emitted from the 14a, the light source (G) 20514b and the light source (B) 20514c.

Light source (R) 20514a, light source (G) 20514b and light source (B) 2051 of each color RGB
4c has a function of emitting light as needed. For example, a light source (R) 20514a, a light source (
As the G) 20514b and the light source (B) 20514c, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20513 has a function of efficiently guiding the fluorescence of the light source 20514 to the diffuser plate 20511 and the light-shielding plate 20512. The light-shielding plate 20512 has a function of reducing unevenness in brightness by increasing the amount of light-shielding in a place where the light is stronger according to the arrangement of the light source 20514. The diffuser plate 20511 has a function of further reducing unevenness in brightness.

A control circuit for adjusting the brightness of the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c of each color RGB is connected to the backlight unit 20510. By this control circuit, the light source (R) 20514a and the light source (G) of each color RGB
) 20514b and the light source (B) 20514c can be adjusted in brightness.

FIG. 77 is a diagram showing an example of the configuration of a polarizing plate (also referred to as a polarizing film).

The polarizing film 20300 includes a protective film 20301, a substrate film 20302, and PVA.
It has a polarizing film 20303, a substrate film 20304, an adhesive layer 20305, and a release film 20306.

The PVA polarizing film 20303 has a function of producing light (linearly polarized light) only in a certain vibration direction. Specifically, the PVA polarizing film 20303 contains molecules (polarizers) whose electron densities differ greatly between the vertical and horizontal directions. The PVA polarizing film 20303 can produce linearly polarized light by aligning the directions of molecules in which the electron densities differ greatly in the vertical and horizontal directions.

As an example, the PVA polarizing film 20303 is made of polyvinyl alcohol (Poly V).
By doping a polymer film of inyl Alcohol) with an iodine compound and pulling the PVA film in a certain direction, a film in which iodine molecules are arranged in a certain direction can be obtained. Then, the light parallel to the major axis of the iodine molecule is absorbed by the iodine molecule. A dichroic dye may be used instead of iodine for high durability and high heat resistance. The dye is preferably used in a liquid crystal display device such as an in-vehicle LCD or a projector LCD, which is required to have durability and heat resistance.

The PVA polarizing film 20303 is a film (board film 20302) whose base materials are both sides.
And by sandwiching it with the substrate film 20304), the reliability can be increased. In addition, PVA
The polarizing film 20303 may be sandwiched between highly transparent and highly durable triacetylrose (TAC) films. The substrate film and the TAC film function as a protective layer for the polarizer of the PVA polarizing film 20303.

On one of the substrate films (substrate film 20304), an adhesive layer 20305 for attaching to the glass substrate of the liquid crystal panel is attached. The pressure-sensitive adhesive layer 20305 is formed by applying a pressure-sensitive adhesive to a substrate film (board film 20304) on one side. Adhesive layer 203
05 is provided with a release film 20306 (separate film).

The other substrate film (substrate film 20302) is provided with a protective film 20301.

A hard coat scattering layer (anti-glare layer) may be provided on the surface of the polarizing film 20300. Since the hard coat scattering layer has fine irregularities formed on its surface by the AG treatment and has an antiglare function of scattering external light, it is possible to prevent reflection of external light on the liquid crystal panel. Surface reflection can be prevented.

A plurality of optical thin film layers having different refractive indexes may be multilayered (also referred to as anti-reflection treatment or AR treatment) on the surface of the polarizing film 20300. The multi-layered optical thin film layers having different refractive indexes can reduce the surface reflectance due to the interference effect of light.

FIG. 78 is a diagram showing an example of a system block of a liquid crystal display device.

A signal line 20412 is arranged in the pixel portion 20405 extending from the signal line drive circuit 20403. A scanning line 20410 is arranged in the pixel portion 20405 extending from the scanning line driving circuit 20404. Then, a plurality of pixels are arranged in a matrix in the intersection region of the signal line 20412 and the scanning line 20410. Each of the plurality of pixels has a switching element. Therefore, a voltage for controlling the inclination of the liquid crystal molecules can be independently input to each of the plurality of pixels. A structure in which switching elements are provided in each intersecting region in this way is called an active type. However, the present invention is not limited to such an active type, and a passive type configuration may be used. The passive type has a simple process because each pixel does not have a switching element.

The drive circuit unit 20408 includes a control circuit 20402, a signal line drive circuit 20403, and a scanning line drive circuit 20404. A video signal 20401 is input to the control circuit 20402. The control circuit 20402 responds to the video signal 20401 by the signal line drive circuit 2040.
3 and the scanning line drive circuit 20404 are controlled. Therefore, the video signal 20401 inputs a control signal to the signal line drive circuit 20403 and the scanning line drive circuit 20404, respectively. Then, in response to this control signal, the signal line drive circuit 20403 transmits a video signal to the signal line 2041.
The scanning line drive circuit 20404 inputs the scanning signal to the scanning line 20410. Then, the switching element of the pixel is selected according to the scanning signal, and the video signal is input to the pixel electrode of the pixel.

The control circuit 20402 also controls the power supply 20407 according to the video signal 20401. The power supply 20407 has means for supplying electric power to the lighting means 20406. As the lighting means 20406, an edge light type backlight unit or a direct type backlight unit can be used. However, as the lighting means 20406, a front light may be used. The front light is a plate-shaped light unit that is attached to the front side of the pixel portion and is composed of a light emitting body and a light guide body that illuminate the whole. By such lighting means
With low power consumption, the pixel portion can be illuminated evenly.

As shown in FIG. 78 (B), the scanning line drive circuit 20404 has a circuit that functions as a shift register 20441, a level shifter 20442, and a buffer 20443. Signals such as a gate start pulse (GSP) and a gate clock signal (GCK) are input to the shift register 20441.

As shown in FIG. 78 (C), the signal line drive circuit 20403 includes a shift register 20431, a first latch 20432, a second latch 20433, a level shifter 20434, and a buffer 2.
It has a circuit that functions as 0435. The circuit that functions as the buffer 20435 is a circuit that has a function of amplifying a weak signal, and has an operational amplifier and the like. Level shifter 20
A signal such as a start pulse (SSP) is input to the 434, and data (DATA) such as a video signal is input to the first latch 20432. The second latch 20433 has a latch (LAT)
) The signal can be temporarily held and input to the pixel unit 20405 all at once. This is called line sequential drive. Therefore, the second latch can be unnecessary if the pixel performs point-sequential drive instead of line-sequential drive.

In the present embodiment, a known liquid crystal panel can be used. For example, as a liquid crystal panel, a configuration in which a liquid crystal layer is sealed between two substrates can be used.
A transistor, a capacitive element, a pixel electrode, an alignment film, or the like is formed on one of the substrates. A polarizing plate, a retardation plate, or a prism sheet may be arranged on the side opposite to the upper surface of one of the substrates. A color filter, a black matrix, a counter electrode, an alignment film, and the like are formed on the other substrate. A polarizing plate or a retardation plate may be arranged on the side opposite to the upper surface of the other substrate. The color filter and the black matrix may be formed on the upper surface of one of the substrates. A slit (slit) on the upper surface side or the opposite side of one of the substrates (
By arranging the grid), a three-dimensional display can be performed.

The polarizing plate, the retardation plate, and the prism sheet can be arranged between the two substrates, respectively. Alternatively, it can be integrated with any of the two substrates.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 7)
In the present embodiment, the pixel configuration and the pixel operation applicable to the liquid crystal display device will be described.

In the present embodiment, the operation mode of the liquid crystal is TN (Twisted Nem).
atic) mode, IPS (In-Plane-Switching) mode, FFS (
Fringe Field Switching) mode, MVA (Document-Dom)
ain Vertical Element) mode, PVA (Patterned)
Vertical Alignment), ASM (Axially Systemr)
ic aligned Micro-cell mode, OCB (Optical Co)
mpensated Birefringence mode, FLC (Ferrole)
cric Liquid Crystal) mode, AFLC (AntiFerroe)
Rectric Liquid Crystal) and the like can be used.

FIG. 131 (A) is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device.

The pixel 40100 includes a transistor 40101, a liquid crystal element 40102, and a capacitance element 4010.
Has 3. The gate of transistor 40101 is connected to wiring 40105.
The first terminal of the transistor 40101 is connected to the wiring 40104. Transistor 4
The second terminal of 0101 is connected to the first electrode of the liquid crystal element 40102 and the first electrode of the capacitive element 40103. The second electrode of the liquid crystal element 40102 corresponds to the counter electrode 40107. The second electrode of the capacitive element 40103 is connected to the wiring 40106.

Wiring 40104 functions as a signal line. Wiring 40105 functions as a scanning line. The wiring 40106 functions as a capacitance line. Transistor 40101 functions as a switch. The capacitance element 40103 functions as a holding capacitance.

The transistor 40101 may function as a switch, and the polarity of the transistor 40101 may be a P-channel type or an N-channel type.

A video signal is input to the wiring 40104. A scanning signal is input to the wiring 40105. The wiring 40106 is supplied with a certain potential. The scanning signal is an H level or L level digital voltage signal. When the transistor 40101 is an N-channel type, the H level of the scanning signal is the potential at which the transistor 40101 can be turned on, and the L level of the scanning signal is the potential at which the transistor 40101 can be turned off. Alternatively, transistor 4
When 0101 is a P-channel type, the H level of the scanning signal is the potential at which the transistor 40101 can be turned off, and the L level of the scanning signal is the potential at which the transistor 40101 can be turned on. The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Alternatively, the video signal may be an electric current. The current of this video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. The constant potential supplied to the wiring 40106 is preferably equal to the potential of the counter electrode 40107.

The operation of the pixel 40100 will be described separately for the case where the transistor 40101 is on and the case where the transistor 40101 is off.

When the transistor 40101 is on, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40103 are electrically connected. Therefore, the video signal is input from the wiring 40104 to the first electrode (pixel electrode) of the liquid crystal element 40102 and the first electrode of the capacitance element 40103 via the transistor 40101.
Then, the capacitive element 40103 holds the potential difference between the video signal and the potential supplied to the wiring 40106.

When the transistor 40101 is off, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40103 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitance element 40103 are in a floating state. Since the capacitance element 40103 holds the potential difference between the video signal and the potential supplied to the wiring 40106, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitance element 40103
The electrodes maintain the same (corresponding) potential as the video signal. The liquid crystal element 40102 is
The transmittance depends on the video signal.

FIG. 131 (B) is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device. In particular, FIG. 131 (B) is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device suitable for a lateral electric field mode (including an IPS mode and an FFS mode).

Pixels 40110 include transistor 40111, liquid crystal element 40112, and capacitive element 4011.
Has 3. The gate of transistor 40111 is connected to wiring 40115.
The first terminal of the transistor 40111 is connected to the wiring 40114. Transistor 4
The second terminal of 0111 is connected to the first electrode of the liquid crystal element 40112 and the first electrode of the capacitive element 40113. The second electrode of the liquid crystal element 40112 is connected to the wiring 40116. The second electrode of the capacitive element 40113 is connected to the wiring 40116.

The wiring 40114 functions as a signal line. Wiring 40115 functions as a scanning line. The wiring 40116 functions as a capacitance line. Transistor 40111 functions as a switch. The capacitance element 40113 functions as a holding capacitance.

The transistor 40111 may function as a switch, and the polarity of the transistor 40111 may be a P-channel type or an N-channel type.

A video signal is input to the wiring 40114. A scanning signal is input to the wiring 40115. Wiring 40116 is supplied with a certain potential. The scanning signal is an H level or L level digital voltage signal. When the transistor 40111 is an N-channel type, the H level of the scanning signal is the potential at which the transistor 40111 can be turned on, and the L level of the scanning signal is the potential at which the transistor 40111 can be turned off. Alternatively, transistor 4
When 0111 is a P-channel type, the H level of the scanning signal is the potential at which the transistor 40111 can be turned off, and the L level of the scanning signal is the potential at which the transistor 40111 can be turned on. The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Alternatively, the video signal may be an electric current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40110 will be described separately for the case where the transistor 40111 is on and the case where the transistor 40111 is off.

When the transistor 40111 is on, the wiring 40114 and the liquid crystal element 40112
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40113 are electrically connected. Therefore, the video signal is input from the wiring 40114 to the first electrode (pixel electrode) of the liquid crystal element 40112 and the first electrode of the capacitive element 40113 via the transistor 40111.
Then, the capacitive element 40113 holds the potential difference between the video signal and the potential supplied to the wiring 40116.

When the transistor 40111 is off, the wiring 40114 and the liquid crystal element 40112
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40113 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitance element 40113 are in a floating state. Since the capacitance element 40113 holds the potential difference between the video signal and the potential supplied to the wiring 40116, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitance element 40113
The electrodes maintain the same (corresponding) potential as the video signal. The liquid crystal element 40112 is
The transmittance depends on the video signal.

FIG. 132 is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device. In particular, FIG. 132
Is an example of a pixel configuration in which the number of wires can be reduced and the aperture ratio of the pixels can be increased.

FIG. 132 shows two pixels (pixel 40200 and pixel 40210) arranged in the same column direction.
Is shown. For example, when the pixel 40200 is arranged in the Nth row, the pixel 40210 is N +.
It is placed on the first line.

The pixel 40200 includes a transistor 40201, a liquid crystal element 40202, and a capacitive element 4020.
Has 3. The gate of transistor 40201 is connected to wiring 40205.
The first terminal of transistor 40201 is connected to wiring 40204. Transistor 4
The second terminal of 0201 is connected to the first electrode of the liquid crystal element 40202 and the first electrode of the capacitance element 40203. The second electrode of the liquid crystal element 40202 corresponds to the counter electrode 40207. The second electrode of the capacitive element 40203 is connected to the same wiring as the gate of the transistor in the previous row.

The pixel 40210 includes a transistor 40211, a liquid crystal element 40212, and a capacitive element 4021.
Has 3. The gate of transistor 40211 is connected to wiring 40215.
The first terminal of the transistor 40211 is connected to the wiring 40204. Transistor 4
The second terminal of 0211 is connected to the first electrode of the liquid crystal element 40212 and the first electrode of the capacitive element 40213. The second electrode of the liquid crystal element 40212 corresponds to the counter electrode 40217. The second electrode of the capacitive element 40213 has the same wiring as the gate of the transistor in the previous row (wiring 40205).
It is connected to the.

Wiring 40204 functions as a signal line. Wiring 40205 functions as a scanning line on the Nth line. The wiring 40206 functions as a capacitance line on the Nth line. Transistor 40201 functions as a switch. The capacitance element 40203 functions as a holding capacitance.

Wiring 40214 functions as a signal line. The wiring 40215 functions as a scanning line on the N + 1th line. The wiring 40216 functions as a capacitance line on the N + 1th line. Transistor 4021
1 functions as a switch. The capacitance element 40213 functions as a holding capacitance.

Transistor 40201 and transistor 40211 may function as switches.
The polarity of transistor 40201 and the polarity of transistor 40211 may be P-channel type or N-channel type.

A video signal is input to the wiring 40204. Scanning signal (scanning signal) on wiring 40205
Nth line) is entered. A scanning signal (N + 1th line) is input to the wiring 40215.

The scanning signal is an H-level or L-level digital voltage signal. Transistor 40201 (
Alternatively, when the transistor 40211) is an N-channel type, the H level of the scanning signal is the potential at which the transistor 40201 (or the transistor 40211) can be turned on, and the L level of the scanning signal is the potential at which the transistor 40201 (or the transistor 40211) can be turned off. Alternatively, when the transistor 40201 (or transistor 40211) is a P-channel type,
The H level of the scanning signal is the potential that can turn off the transistor 40201 (or transistor 40211), and the L level of the scanning signal is the transistor 40201 (or transistor 40211).
) Is the potential that can be turned on. The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Alternatively, the video signal may be an electric current.
The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40200 will be described separately for the case where the transistor 40201 is on and the case where the transistor 40201 is off.

When the transistor 40201 is on, the wiring 40204 and the liquid crystal element 40202
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40203 are electrically connected. Therefore, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40202 and the first electrode of the capacitive element 40203 via the transistor 40201.
Then, the capacitive element 40203 holds a potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the previous row.

When the transistor 40201 is off, the wiring 40204 and the liquid crystal element 40202
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40203 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitance element 40203 are in a floating state. Since the capacitance element 40203 holds the potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the previous row, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitance element 40203 are video. Maintain the same (corresponding) potential as the signal. In addition, it should be noted.
The liquid crystal element 40202 has a transmittance corresponding to the video signal.

The operation of the pixel 40210 will be described separately for the case where the transistor 40211 is on and the case where the transistor 40211 is off.

When the transistor 40211 is on, the wiring 40204 and the liquid crystal element 40212
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40213 are electrically connected. Therefore, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40212 and the first electrode of the capacitive element 40213 via the transistor 40211.
Then, the capacitive element 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row.

When the transistor 40211 is off, the wiring 40204 and the liquid crystal element 40212
The first electrode (pixel electrode) of the above and the first electrode of the capacitive element 40213 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40212 and the first electrode of the capacitive element 40213 are in a floating state. Since the capacitive element 40213 holds the potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row, the liquid crystal element 4021
The first electrode of 2 and the first electrode of the capacitive element 40213 maintain the same (corresponding) potential as the video signal. The liquid crystal element 40212 has a transmittance according to the video signal.

FIG. 133 is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device. In particular, FIG. 133
Is an example of a pixel configuration in which the viewing angle can be improved by using sub-pixels.

Pixel 40320 has sub-pixel 40300 and sub-pixel 40310. Pixel 403
Although the case where 20 has two sub-pixels will be described, pixel 40320 may have three or more sub-pixels.

The sub-pixel 40300 includes a transistor 40301, a liquid crystal element 40302, and a capacitance element 40.
It has 303. The gate of transistor 40301 is connected to wiring 40305. The first terminal of the transistor 40301 is connected to the wiring 40304. The second terminal of the transistor 40301 is the first electrode of the liquid crystal element 40302 and the first terminal of the capacitance element 40303.
It is connected to the electrode. The second electrode of the liquid crystal element 40302 corresponds to the counter electrode 40307. The second electrode of the capacitive element 40303 is connected to the wiring 40306.

The sub-pixel 40310 includes a transistor 40311, a liquid crystal element 40321, and a capacitance element 40.
It has 313. The gate of transistor 40311 is connected to wiring 40315. The first terminal of the transistor 40301 is connected to the wiring 40304. The second terminal of the transistor 40311 is the first electrode of the liquid crystal element 40312 and the first terminal of the capacitive element 40313.
It is connected to the electrode. The second electrode of the liquid crystal element 40317 corresponds to the counter electrode 40317. The second electrode of the capacitive element 40313 is connected to the wiring 40306.

Wiring 40304 functions as a signal line. Wiring 40305 functions as a scanning line. Wiring 40315 functions as a signal line. The wiring 40306 functions as a capacitance line. Transistor 40301 functions as a switch. Transistor 40311 functions as a switch. The capacitance element 40303 functions as a holding capacitance. The capacitance element 40313 functions as a holding capacitance.

The transistor 40301 may function as a switch, and the polarity of the transistor 40301 may be a P-channel type or an N-channel type. The transistor 40311 may function as a switch, and the polarity of the transistor 40311 may be P-channel type or N.
It may be a channel type.

A video signal is input to the wiring 40304. A scanning signal is input to the wiring 40305. A scanning signal is input to the wiring 40315. Wiring 40306 is supplied with a certain potential.

The scanning signal is an H level or L level digital voltage signal. Transistor 403
When 01 (or transistor 40311) is an N-channel type, the H level of the scanning signal is the potential at which transistor 40301 (or transistor 40311) can be turned on, and the L level of the scanning signal is the potential at which transistor 40301 (or transistor 40311) can be turned off. .. Alternatively, when the transistor 40301 (or transistor 40311) is a P-channel type, the H level of the scanning signal is the potential that can turn off the transistor 40301 (or transistor 40311), and the L level of the scanning signal is the transistor 40301 (or transistor 40).
It is a potential that can turn on 311). The video signal is an analog voltage. However, the video signal may be a digital voltage without limitation. Alternatively, the video signal may be an electric current. The current of the video signal may be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Wiring 4
The constant potential supplied to 0306 is the potential of the counter electrode 40307 or the counter electrode 4031.
It is preferably equal to the potential of 7.

Regarding the operation of pixel 40320, transistor 40301 is turned on and transistor 4031
The case where 1 is off, the case where the transistor 40301 is off and the transistor 40311 is on, and the case where the transistor 40301 and the transistor 40311 are off will be described separately.

When the transistor 40301 is on and the transistor 40311 is off, in the sub-pixel 40300, the wiring 40304 and the first electrode (pixel electrode) of the liquid crystal element 40302 are used.
And the first electrode of the capacitive element 40303 are electrically connected. Therefore, the video signal is input from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitive element 40303 via the transistor 40301. And the capacitive element 403
03 holds the potential difference between the video signal and the potential supplied to the wiring 40306. At this time, in the sub pixel 40310, the wiring 40304 and the first electrode of the liquid crystal element 40312 (
The pixel electrode) and the first electrode of the capacitive element 40313 are electrically cut off. Therefore, the video signal is not input to the sub-pixel 40310.

When the transistor 40301 is turned off and the transistor 40311 is turned on, the wiring 40304, the first electrode (pixel electrode) of the liquid crystal element 40302, and the first electrode of the capacitive element 40303 are electrically cut off in the sub pixel 40300. Will be done. Therefore, the liquid crystal element 4
The first electrode of 0302 and the first electrode of the capacitive element 40303 are in a floating state. Capacitive element 40
Since 303 holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitance element 40303 have the same (corresponding) potential as the video signal. maintain. At this time, in the sub pixel 40310, the wiring 403
The 04 is electrically connected to the first electrode (pixel electrode) of the liquid crystal element 40321 and the first electrode of the capacitive element 40313. Therefore, the video signal is transmitted from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40321 and the capacitive element 4031 via the transistor 4031.
It is input to the first electrode of 3. Then, the capacitive element 40313 is a video signal and wiring 40316.
Holds the potential difference from the potential supplied to.

If transistor 40301 and transistor 4031 are off, sub-pixel 4
At 0300, the wiring 40304, the first electrode (pixel electrode) of the liquid crystal element 40302, and the first electrode of the capacitive element 40303 are electrically cut off. Therefore, the liquid crystal element 4030
The first electrode of No. 2 and the first electrode of the capacitive element 40303 are in a floating state. Capacitive element 40303
Holds the potential difference between the video signal and the potential supplied to the wiring 40306, so that the first electrode of the liquid crystal element 40302 and the first electrode of the capacitive element 40303 are the same as the video signal (
Maintain the corresponding) potential. The liquid crystal element 40302 has a transmittance according to the video signal. At this time, at this time, in the sub-pixel 40310, the wiring 40304, the first electrode (pixel electrode) of the liquid crystal element 40321, and the first electrode of the capacitance element 40313 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40312 and the first electrode of the capacitance element 40313 are in a floating state. Since the capacitance element 40313 holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40312 and the capacitance element 403
The first electrode of 13 maintains the same (corresponding) potential as the video signal. The liquid crystal element 40
312 has a transmittance according to the video signal.

The video signal input to the sub pixel 40300 may have a value different from the video signal input to the sub pixel 40310. In this case, the orientation of the liquid crystal molecules of the liquid crystal element 40302 is set to the liquid crystal element 4.
Since it can be made different from the orientation of the liquid crystal molecules of 0312, the viewing angle can be widened.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 8)
In this embodiment, a method of driving the display device will be described. In particular, a method of driving the liquid crystal display device will be described.

The liquid crystal panel that can be used in the liquid crystal display device described in the present embodiment has a structure in which a liquid crystal material is sandwiched between two substrates. Each of the two substrates is provided with electrodes for controlling the electric field applied to the liquid crystal material. A liquid crystal material is a material whose optical and electrical properties change depending on an electric field applied from the outside. Therefore, the liquid crystal panel
It is a device capable of obtaining desired optical and electrical properties by controlling the voltage applied to the liquid crystal material using the electrodes of the substrate. Then, by arranging a large number of electrodes in a plane, each of them becomes a pixel, and by individually controlling the voltage applied to the pixel, a liquid crystal panel capable of displaying a fine image can be obtained.

Here, the response time of the liquid crystal material to the change of the electric field is the distance between the two substrates (cell gap).
Although it depends on the type of liquid crystal material and the like, it is generally several milliseconds to several tens of milliseconds. Further, when the amount of change in the electric field is small, the response time of the liquid crystal material becomes even longer. This property causes problems in image display such as afterimage, tailing, and decrease in contrast when displaying a moving image by the liquid crystal panel, especially when changing from one halftone to another halftone (change in electric field). Is small), the degree of the above-mentioned obstacle becomes remarkable.

On the other hand, as a problem peculiar to the liquid crystal panel using the active matrix, there is a change in the write voltage due to constant charge drive. The constant charge drive in this embodiment will be described below.

The pixel circuit in the active matrix includes a switch that controls writing and a capacitive element that holds the charge. The method of driving the pixel circuit in the active matrix is that after the switch is turned on and a predetermined voltage is written to the pixel circuit, the switch is immediately turned off to hold the electric charge in the pixel circuit (hold state). In the hold state, no charge is exchanged between the inside and outside of the pixel circuit (constant charge). Normally, the period in which the switch is off is several hundred times (the number of scanning lines) longer than the period in which the switch is in the on state. Therefore, it can be considered that the switch of the pixel circuit is almost in the off state.
From the above, it is assumed that the constant charge drive in the present embodiment is a drive method in which the pixel circuit is in a hold state for most of the period when the liquid crystal panel is driven.

Next, the electrical properties of the liquid crystal material will be described. When the electric field applied from the outside changes, the optical properties of the liquid crystal material change, and at the same time, the dielectric constant also changes. That is, when each pixel of the liquid crystal panel is considered as a capacitive element (liquid crystal element) sandwiched between two electrodes, the capacitive element is a capacitive element whose capacitance changes depending on the applied voltage. This phenomenon is called dynamic capacitance.

In this way, when a capacitive element whose capacitance changes depending on the applied voltage is driven by the above-mentioned constant charge drive, the following problems occur. That is, there is a problem that if the capacitance of the liquid crystal element changes in the hold state in which the electric charge does not move, the applied voltage also changes. This can be understood from the fact that the amount of charge is constant in the relational expression (amount of charge) = (capacitance) × (applied voltage).

For the above reasons, in the liquid crystal panel using the active matrix, the voltage in the hold state changes from the voltage in the writing state due to the constant charge drive. As a result, the transmittance of the liquid crystal element is different from the change in the driving method that does not take the hold state. This situation is shown in FIG. 83. FIG. 83A shows a control example of a voltage written in a pixel circuit, with time on the horizontal axis and absolute value of voltage on the vertical axis. FIG. 83B shows an example of controlling the voltage written in the pixel circuit when the horizontal axis represents time and the vertical axis represents voltage. In FIG. 83C, the horizontal axis represents time and the vertical axis represents the transmittance of the liquid crystal element.
It shows the time change of the transmittance of the liquid crystal element when the voltage represented by FIG. 83A or FIG. 83B is written to the pixel circuit. In FIGS. 83 (A) to 83 (C), the period F represents the voltage rewriting cycle, and the times at which the voltage is rewritten are t ₁ , t ₂ , t ₃ , t ₄ , ...
・ Explain as.

Here, writing voltage corresponding to image data input to the liquid crystal display device, the rewrite at time 0 _{| V} 1 |, the time _{t 1, t 2, t 3} , t 4, the rewriting in · · · |
It is assumed that V _{2 |.} (See FIG. 83 (A))

The polarity of the write voltage corresponding to the image data input to the liquid crystal display device may be changed periodically. (Inverted drive: see FIG. 83 (B)) By this method, it is possible to prevent the DC voltage from being applied to the liquid crystal as much as possible, so that it is possible to prevent seizure due to deterioration of the liquid crystal element. The period for exchanging the polarities (inversion cycle) may be the same as the voltage rewriting cycle. In this case, since the inversion cycle is short, it is possible to reduce the occurrence of flicker due to the inversion drive. Further, the inversion cycle may be a cycle that is an integral multiple of the voltage rewriting cycle. In this case, since the inversion cycle is long and the frequency of writing the voltage by changing the polarity can be reduced, the power consumption can be reduced.

Then, the time change of the transmittance of the liquid crystal element when the voltage as shown in FIG. 83 (A) or FIG. 83 (B) is applied to the liquid crystal element is shown in FIG. 83 (C). Here, the voltage on the liquid crystal element | V _{1
Let TR 1 be} the transmittance of the liquid crystal element after a sufficient time has passed after | is applied. Similarly, the transmittance of the liquid crystal element after a voltage | V ₂ | is applied to the liquid crystal element and a sufficient time has elapsed is set to TR ₂ . When the voltage applied to the liquid crystal element _{changes from | V 1} | to | V _{2 | at time t 1} , the transmittance of the liquid crystal element does not _{immediately become TR 2 as shown by the broken line 30401.} It changes slowly. For example, when the voltage rewriting cycle is the same as the frame cycle (16.7 milliseconds) of the 60 Hz image signal, it takes about several frames until _{the transmittance changes to TR 2.}

However, the smooth time change of the transmittance as shown by the broken line 30401 is when the voltage | V ₂ | is accurately applied to the liquid crystal element. In an actual liquid crystal panel, for example, a liquid crystal panel using an active matrix, the voltage in the hold state changes from the voltage in the writing state due to the constant charge drive, so that the transmittance of the liquid crystal element is dashed line 30401. Instead of the time change as shown in the above, the time change is gradual as shown in the solid line 30401. This is because the voltage changes due to the constant charge drive, so that the target voltage cannot be reached by one writing. As a result, the response time of the transmittance of the liquid crystal element becomes apparently longer than the original response time (broken line 30401), and problems in image display such as afterimage, tailing, and decrease in contrast become remarkable. It will cause it.

By using the overdrive drive, it is possible to simultaneously solve the phenomenon that the original response time of the liquid crystal element and the apparent response time due to the insufficient writing due to the dynamic capacitance and the constant charge drive become longer. This situation is shown in FIG. 84. FIG. 84A shows a control example of a voltage written in a pixel circuit, with time on the horizontal axis and absolute value of voltage on the vertical axis. FIG. 84B shows an example of controlling the voltage written in the pixel circuit when the horizontal axis represents time and the vertical axis represents voltage. In FIG. 84 (C), the horizontal axis represents time and the vertical axis represents the transmittance of the liquid crystal element, and the voltage represented by FIG. 84 (A) or FIG. 84 (B) is written in the pixel circuit. It represents the time change of transmittance. In FIGS. 84 (A) to 84 (C), the period F represents the voltage rewriting cycle, and the times at which the voltage is rewritten will be described as t ₁ , t ₂ , t ₃ , t ₄ , ....

Here, the write voltage corresponding to the image data input to the liquid crystal display device is | V ₁ | for rewriting at time 0, | V ₃ | for rewriting at time t ₁ , | V 3 |, time t ₂ , t ₃ , t.
_In the rewriting in 4, ..., it is assumed that | V ₂ |. (See FIG. 84 (A))

The polarity of the write voltage corresponding to the image data input to the liquid crystal display device may be changed periodically. (Reversal drive: see FIG. 84 (B)) By this method, it is possible to prevent the DC voltage from being applied to the liquid crystal as much as possible, so that it is possible to prevent seizure due to deterioration of the liquid crystal element. The period for exchanging the polarities (inversion cycle) may be the same as the voltage rewriting cycle. In this case, since the inversion cycle is short, it is possible to reduce the occurrence of flicker due to the inversion drive. Further, the inversion cycle may be a cycle that is an integral multiple of the voltage rewriting cycle. In this case, since the inversion cycle is long and the frequency of writing the voltage by changing the polarity can be reduced, the power consumption can be reduced.

Then, the time change of the transmittance of the liquid crystal element when the voltage as shown in FIG. 84 (A) or FIG. 84 (B) is applied to the liquid crystal element is shown in FIG. 84 (C). Here, the voltage on the liquid crystal element | V _{1
Let TR 1 be} the transmittance of the liquid crystal element after a sufficient time has passed after | is applied. Similarly, the transmittance of the liquid crystal element after a voltage | V ₂ | is applied to the liquid crystal element and a sufficient time has elapsed is set to TR ₂ . Similarly, the transmittance of the liquid crystal element after a voltage | V ₃ | is applied to the liquid crystal element and a sufficient time has elapsed is set to TR ₃ . At time t ₁ , the voltage applied to the liquid crystal element changes from | V ₁ | to | V.
_When it changes to 3 |, the transmittance of the liquid crystal element tries to change _{to TR 3} over several frames as shown by the broken line 30501. However, the voltage | _{V 3} | applied at the end at time _{t 2,} later than time _{t 2,} the voltage | _{V 2} | is applied. Therefore, the transmittance of the liquid crystal element is not as shown by the broken line 30501, but as shown by the solid line 30502. here,
At the time of time t _2, the so transmittance is generally a TR _2, the voltage | V 3 _| to set the values preferred. Here, the voltage | V ₃ | is also referred to as an overdrive voltage.

That is, the response time of the liquid crystal element can be controlled to some extent by changing the overdrive voltage | V _{3 |.} This is because the response time of the liquid crystal changes depending on the strength of the electric field. Specifically, the stronger the electric field, the shorter the response time of the liquid crystal element, and the weaker the electric field, the longer the response time of the liquid crystal element.

The overdrive voltage | V ₃ | is preferably changed according to the amount of change in voltage, that is, the voltages | V ₁ | and | V ₂ | _{that give the target transmittances TR 1} and TR _2. .. This is because even if the response time of the liquid crystal element changes depending on the amount of change in voltage, the optimum response time can always be _{obtained by changing the overdrive voltage | V 3 | accordingly.} is there.

The overdrive voltage | V ₃ | is preferably changed depending on the mode of the liquid crystal such as TN, VA, IPS, OCB. This is because even if the response speed of the liquid crystal differs depending on the mode of the liquid crystal, the optimum response time can always be obtained by changing the _{overdrive voltage | V 3 | accordingly.}

The voltage rewriting cycle F may be the same as the frame cycle of the input signal. In this case, since the peripheral drive circuit of the liquid crystal display device can be simplified, a liquid crystal display device having a low manufacturing cost can be obtained.

The voltage rewriting cycle F may be shorter than the frame cycle of the input signal. For example
The voltage rewriting cycle F may be 1/2 times, 1/3 times, or less than the frame period of the input signal. This method is effective in combination with countermeasures for deterioration of video quality due to hold drive of the liquid crystal display device, such as black insertion drive, backlight blinking, backlight scan, and intermediate image insertion drive by motion compensation. is there. That is, since the required response time of the liquid crystal element is short, the countermeasure for the deterioration of the moving image quality due to the hold drive of the liquid crystal display device is relatively easy by using the overdrive drive method described in the present embodiment. The response time of the liquid crystal element can be shortened. Although it is possible to shorten the response time of the liquid crystal element essentially depending on the cell gap, the liquid crystal material, the liquid crystal mode, and the like, it is technically difficult. Therefore, it is very important to use a method such as overdrive that shortens the response time of the liquid crystal element from the driving method.

The voltage rewriting cycle F may be longer than the frame cycle of the input signal. For example
The voltage rewriting cycle F may be twice, three times, or more than the frame period of the input signal. This method is effective when used in combination with a means (circuit) for determining whether or not the voltage is rewritten for a long period of time. That is, when the voltage is not rewritten for a long period of time, the operation of the circuit can be stopped during that period by not performing the voltage rewriting operation itself, so that a liquid crystal display device having low power consumption can be obtained. Can be done.

Next, a specific method for changing the overdrive voltage | V ₃ | according to the voltages | V ₁ | and | V _{2 | that give the desired transmittances TR 1} and TR _{2 will be described.}

Since the overdrive circuit is a circuit for appropriately controlling the overdrive voltage | V ₃ | according to the voltages | V ₁ | and | V _{2 | that give the target transmission voltages TR 1} and TR _{2, it is over.} The signal input to the drive circuit is a voltage | V that gives _{a transmission rate TR 1.
The} signal related to 1 | and the signal related to the voltage | V _{2 | that gives the transmittance TR 2} , and the signal output from the overdrive circuit is the signal related to the overdrive voltage | V ₃ |. Here, as these signals, the voltage applied to the liquid crystal element (| V ₁ |, | V ₂ |
, | V ₃ |) may be an analog voltage value, or may be a digital signal for giving a voltage to be applied to the liquid crystal element. Here, the signal related to the overdrive circuit will be described as a digital signal.

First, the overall configuration of the overdrive circuit will be described with reference to FIG. 80 (A). Here, the input image signal 301 is used as a signal for controlling the overdrive voltage.
01a and 30101b are used. As a result of processing these signals, it is assumed that the output image signal 30104 is output as a signal that gives an overdrive voltage.

Here, the voltages | V ₁ | and | V ₂ | that give the desired transmittances TR ₁ and TR _{2 are}
Since the image signals are in frames adjacent to each other, it is preferable that the input image signals 30101a and 30101b are also image signals in frames adjacent to each other. In order to obtain such a signal, the input image signal 30101a is input to the delay circuit 30102 in FIG. 80A, and the resulting signal is input to the input image signal 3010.
It can be 1b. Examples of the delay circuit 30102 include a memory. That is, in order to delay the input image signal 30101a by one frame, the input image signal 30101a is stored in the memory, and at the same time, the signal stored in the previous frame is stored as the input image signal 30101b in the memory. By simultaneously inputting the input image signal 30101a and the input image signal 30101b into the correction circuit 30103, it is possible to handle the image signals in frames adjacent to each other. Then, the output image signal 30104 can be obtained by inputting the image signals in the frames adjacent to each other into the correction circuit 30103. When a memory is used as the delay circuit 30102, a memory having a capacity capable of storing an image signal for one frame (that is, a frame memory) can be used in order to delay by one frame. By doing so, it is possible to have a function as a delay circuit without excess or deficiency of the memory capacity.

Next, the delay circuit 30102 configured mainly for the purpose of reducing the memory capacity will be described. By using such a circuit as the delay circuit 30102, the capacity of the memory can be reduced, so that the manufacturing cost can be reduced.

Specifically, as the delay circuit 30102 having such a feature, the one shown in FIG. 80 (B) can be used. The delay circuit 30102 shown in FIG. 80 (B) includes an encoder 30105, a memory 30106, and a decoder 30107.

The operation of the delay circuit 30102 shown in FIG. 80 (B) is as follows. First, before storing the input image signal 30101a in the memory 30106, the encoder 3010
According to 5, the compression process is performed. This makes it possible to reduce the size of the data to be stored in the memory 30106. As a result, the memory capacity can be reduced, so that the manufacturing cost can be reduced. Then, the compressed image signal is sent to the decoder 30107, where the decompression process is performed. As a result, the encoder 30105
The previous signal compressed by can be restored. Here, the encoder 3010
The compression / decompression process performed by 5 and the decoder 30107 may be a reversible process. By doing so, since the image signal is not deteriorated even after the compression / decompression processing is performed, the memory capacity can be reduced without degrading the quality of the image finally displayed on the apparatus. Further, the compression / decompression processing performed by the encoder 30105 and the decoder 30107 may be irreversible processing. By doing so, the size of the compressed image signal data can be made very small, so that the memory capacity can be significantly reduced.

As a method for reducing the memory capacity, various methods other than those listed above can be used. Instead of compressing the image with an encoder, reduce the color information contained in the image signal (for example, reduce the color from 260,000 colors to 65,000 colors), or reduce the number of data (reduce the resolution), etc. The method can be used.

Next, a specific example of the correction circuit 30103 will be described with reference to FIGS. 80 (C) to 80 (E). The correction circuit 30103 is a circuit for outputting an output image signal of a certain value from two input image signals. Here, when the relationship between the two input image signals and the output image signal is non-linear and it is difficult to obtain them by a simple calculation, a look-up table (LUT) may be used as the correction circuit 30103. Since the relationship between the two input image signals and the output image signal is obtained in advance in the LUT by measurement, the output image signal corresponding to the two input image signals can be obtained only by referring to the LUT. (See (C) of FIG. 80) By using the LUT 30108 as the correction circuit 30103, the correction circuit 30103 can be realized without performing complicated circuit design or the like.

Here, since the LUT is one of the memories, it is preferable to reduce the memory capacity as much as possible in order to reduce the manufacturing cost. As an example of the correction circuit 30103 for realizing this, the circuit shown in FIG. 80 (D) can be considered. Correction circuit 30103 shown in FIG. 80 (D)
Has a LUT 30109 and an adder 30110. The LUT 30109 stores the difference data between the input image signal 30101a and the output image signal 30104 to be output. That is, the corresponding difference data from the input image signal 30101a and the input image signal 30101b is extracted from the LUT 30109, and the extracted difference data and the input image signal 30
The output image signal 30104 can be obtained by adding 101a with the adder 30110. By using the data stored in the LUT 30109 as the difference data, L
The memory capacity of the UT can be reduced. Because, the output image signal 30104 as it is
This is because the data size of the difference data is smaller than that of the difference data, so that the memory capacity required for the LUT 30109 can be reduced.

Further, if the output image signal is obtained by a simple operation such as a four-rule operation of two input image signals, it can be realized by a combination of simple circuits such as an adder, a subtractor, and a multiplier.
As a result, it is not necessary to use the LUT, and the manufacturing cost can be significantly reduced.
Examples of such a circuit include the circuit shown in FIG. 80 (E). Of FIG. 80
The correction circuit 30103 shown in E) includes a subtractor 30111, a multiplier 30112, and an adder 3.
Has 0113. First, the difference between the input image signal 30101a and the input image signal 30101b is obtained by the subtractor 30111. Then, the multiplier 30112 multiplies the difference by the appropriate coefficient. Then, the output image signal 30104 can be obtained by adding the difference value obtained by multiplying the input image signal 30101a by an appropriate coefficient by the adder 30113. By using such a circuit, it is not necessary to use the LUT, and the manufacturing cost can be significantly reduced.

By using the correction circuit 30103 shown in FIG. 80 (E) under certain conditions, it is possible to prevent the output of an inappropriate output image signal 30104. The conditions are an output image signal 30104 that gives an overdrive voltage and an input image signal 30101.
The difference value between a and the input image signal 30101b has linearity. Then, the slope of this linearity is used as a coefficient to be multiplied by the multiplier 30112. That is, it is preferable to use the correction circuit 30103 shown in FIG. 80 (E) for the liquid crystal element having such a property. Examples of the liquid crystal element having such a property include an IPS mode liquid crystal element having a small gradation dependence of the response speed. As described above, for example, by using the correction circuit 30103 shown in FIG. 80 (E) for the liquid crystal element in the IPS mode, the manufacturing cost can be significantly reduced.
Moreover, it is possible to obtain an overdrive circuit capable of preventing the output of an inappropriate output image signal 30104.

Note that the same functions as the circuits shown in FIGS. 80 (A) to (E) may be realized by software processing. Regarding the memory used for the delay circuit, other memory of the liquid crystal display device, memory of the device that sends out the image to be displayed on the liquid crystal display device (for example, a video card of a personal computer or a similar device), etc. It can be diverted. By doing so, not only the manufacturing cost can be reduced, but also the strength of overdrive and the usage situation can be selected by the user according to his / her preference.

Next, the drive for manipulating the potential of the common line will be described with reference to FIG. 81. Of FIG. 81
A) represents a plurality of pixel circuits when one common line is arranged for one scanning line in a display device using a display element having a capacitive property such as a liquid crystal element. It is a figure. The pixel circuit shown in FIG. 81 (A) includes a transistor 30201, an auxiliary capacity 30202, a display element 30203, a video signal line 30204, a scanning line 30205, and a common line 30206.

The gate electrode of the transistor 30201 is electrically connected to the scanning line 30205, one of the source electrode and the drain electrode of the transistor 30201 is electrically connected to the video signal line 30204, and the other of the source electrode and the drain electrode of the transistor 30201. Is electrically connected to one electrode of the auxiliary capacity 30202 and one electrode of the display element 30203.
Further, the other electrode of the auxiliary capacity 30202 is electrically connected to the common wire 30206.

First, since the transistor 30201 is turned on for the pixel selected by the scanning line 30205, the display element 30203 and the auxiliary capacitance 3 are passed through the video signal line 30204, respectively.
A voltage corresponding to the video signal is applied to 0202. At this time, the video signal is the common line 30.
If the lowest gradation is displayed for all the pixels connected to the 206, or if the highest gradation is displayed for all the pixels connected to the common line 30206, the pixel. It is not necessary to write a video signal to each of the video signals via the video signal line 30204.
Instead of writing the video signal via the video signal line 30204, the voltage applied to the display element 30203 can be changed by moving the potential of the common line 30206.

Next, FIG. 81B shows a display device using a display element having a capacitive property such as a liquid crystal element, in which two common lines are arranged for one scanning line. It is a figure showing a plurality of pixel circuits. The pixel circuit shown in FIG. 81 (B) includes a transistor 30211, an auxiliary capacitance 30212, a display element 30213, a video signal line 30214, a scanning line 30215, a first common line 30216, and a second common line 30217. ..

The gate electrode of the transistor 30211 is electrically connected to the scanning line 30215, and one of the source electrode and the drain electrode of the transistor 30211 is electrically connected to the video signal line 30214, and the other of the source electrode and the drain electrode of the transistor 30211. Is electrically connected to one electrode of the auxiliary capacity 30212 and one electrode of the display element 30213.
Further, the other electrode of the auxiliary capacitance 30212 is electrically connected to the first common wire 30216.
Further, in the pixel adjacent to the pixel, the other electrode of the auxiliary capacitance 30212 is electrically connected to the second common line 30217.

Since the pixel circuit shown in FIG. 81 (B) has few pixels electrically connected to one common line, the first common line 30216 is used instead of writing the video signal via the video signal line 30214. Alternatively, by moving the potential of the second common line 30217, the frequency with which the voltage applied to the display element 30213 can be changed becomes significantly higher. In addition, source inversion drive or dot inversion drive becomes possible. By the source inversion drive or the dot inversion drive, flicker can be suppressed while improving the reliability of the element.

Next, the scanning backlight will be described with reference to FIG. 82. FIG. 82 (A) is a diagram showing a scanning backlight in which cold cathode tubes are juxtaposed. The scanning backlight shown in FIG. 82 (A) includes a diffuser plate 30301 and N cold cathode tubes 30302-1 to 30302-N. By arranging N cold-cathode tubes 30302-1 to 30302-N behind the diffuser plate 30301, the N cold-cathode tubes 30302-1 to 30302-N can be scanned by changing their brightness. Can be done.

The change in the brightness of each cold-cathode tube during scanning will be described with reference to FIG. 82 (C). First, the brightness of the cold cathode tube 30302-1 is changed for a certain period of time. Then, after that, the cold cathode tube 30
The brightness of the cold cathode fluorescent lamp 30302-2 arranged next to the 302-1 is changed by the same time. In this way, the brightness is sequentially changed from the cold cathode tubes 30302-1 to 30302-N. In (C) of FIG. 82, the brightness changed for a certain period of time is smaller than the original brightness, but may be larger than the original brightness. In addition, cold cathode tubes 30302-1 to 3030
Although it is assumed that scanning is performed up to 2-N, the cold cathode tubes 30302-N to 30302-1 may be scanned in the opposite direction.

By driving as shown in FIG. 82, the average brightness of the backlight can be reduced. Therefore, it is possible to reduce the power consumption of the backlight, which accounts for most of the power consumption of the liquid crystal display device.

An LED may be used as the light source of the scanning backlight. The scanning backlight in that case is as shown in FIG. 82 (B). The scanning backlight shown in FIG. 82 (B) includes a diffuser plate 30311 and light sources 30312-1 to 30312-N in which LEDs are arranged side by side. When an LED is used as the light source of the scanning backlight, the backlight is thin.
It has the advantage of being lighter. In addition, there is an advantage that the color reproduction range can be widened. Further, LEs juxtaposed with each of the light sources 30312-1 to 30312-N in which LEDs are juxtaposed.
Since D can also be scanned in the same manner, it can also be a point scanning type backlight.
If the point scanning type is used, the image quality of moving images can be further improved.

Even when an LED is used as the light source of the backlight, it can be driven by changing the brightness as shown in FIG. 82 (C).

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 9)
In this embodiment, various liquid crystal modes will be described.

First, various liquid crystal modes will be described with reference to cross-sectional views.

FIGS. 134 (A) and 134 (B) show a schematic view of a cross section of the TN mode.

The liquid crystal layer 50100 is sandwiched between the first substrate 50101 and the second substrate 50102 arranged so as to face each other. On the upper surface of the first substrate 50101, the first electrode 501
05 is formed. A second electrode 50106 is formed on the upper surface of the second substrate 50102. The first polarizing plate 50103 is arranged on the side opposite to the liquid crystal layer of the first substrate 50101. A second polarizing plate 50104 is arranged on the side opposite to the liquid crystal layer of the second substrate 50102. The first polarizing plate 50103 and the second polarizing plate 50104 are arranged so as to form a cross Nicol.

The first polarizing plate 50103 may be arranged on the upper surface of the first substrate 50101. The second polarizing plate 50104 may be arranged on the upper surface of the second substrate 50102.

Of the first electrode 50105 and the second electrode 50106, at least one (or both) of the electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 134 (A) is a schematic cross-sectional view when a voltage is applied to the first electrode 50105 and the second electrode 50106 (referred to as a longitudinal electric field method). Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the first polarizing plate 5
Since 0103 and the second polarizing plate 50104 are arranged so as to form a cross Nicol,
Light from the backlight cannot pass through the substrate. Therefore, the black display is performed.

By controlling the voltage applied to the first electrode 50105 and the second electrode 50106, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 134 (B) is a schematic cross-sectional view when no voltage is applied to the first electrode 50105 and the second electrode 50106. Since the liquid crystal molecules are arranged side by side and rotate in a plane, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50103 and the second polarizing plate 50104 are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore, white display is performed. This is the so-called normally white mode.

The liquid crystal display device having the configurations shown in FIGS. 134 (A) and 134 (B) can perform full-color display by providing a color filter. The color filter is the first substrate 50101.
It can be provided on the side or the second substrate 50102 side.

As the liquid crystal material used in the TN mode, a known one may be used.

FIGS. 135 (A) and 135 (B) show a schematic view of a cross section of the VA mode. The VA mode is a mode in which the liquid crystal molecules are oriented so as to be perpendicular to the substrate when there is no electric field.

The liquid crystal layer 50200 is sandwiched between the first substrate 50201 and the second substrate 50202 arranged so as to face each other. On the upper surface of the first substrate 50201, the first electrode 502
05 is formed. A second electrode 50206 is formed on the upper surface of the second substrate 50202. A first polarizing plate 50203 is arranged on the opposite side of the first substrate 50201 from the liquid crystal layer. A second polarizing plate 50204 is arranged on the side opposite to the liquid crystal layer of the second substrate 50202. The first polarizing plate 50203 and the second polarizing plate 50204 are arranged so as to form a cross Nicol.

The first polarizing plate 50203 may be arranged on the upper surface of the first substrate 50201. The second polarizing plate 50204 may be arranged on the upper surface of the second substrate 50202.

Of the first electrode 50205 and the second electrode 50206, at least one (or both) electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 135 (A) is a schematic cross-sectional view when a voltage is applied to the first electrode 50205 and the second electrode 50206 (referred to as a longitudinal electric field method). Since the liquid crystal molecules are arranged side by side, the light from the backlight is affected by the birefringence of the liquid crystal molecules. And the first polarizing plate 50
Since the 203 and the second polarizing plate 50204 are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore, white display is performed.

By controlling the voltage applied to the first electrode 50205 and the second electrode 50206, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 135 (B) is a schematic cross-sectional view when no voltage is applied to the first electrode 50205 and the second electrode 50206. Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 50203 and the second polarizing plate 50203
Since the polarizing plate 50204 of the above is arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate. Therefore, the black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the configurations shown in FIGS. 135 (A) and 135 (B) can perform full-color display by providing a color filter. The color filter is the first substrate 50201.
It can be provided on the side or the second substrate 50202 side.

As the liquid crystal material used in the VA mode, a known one may be used.

FIGS. 135 (C) and 135 (D) show a schematic view of a cross section of the MVA mode. The MVA mode is a method of compensating each other for the viewing angle dependence of each part.

The liquid crystal layer 50210 is sandwiched between the first substrate 50211 and the second substrate 50212 arranged so as to face each other. On the upper surface of the first substrate 50211, the first electrode 502
15 is formed. A second electrode 50216 is formed on the upper surface of the second substrate 50212. A first protrusion 502117 is formed on the first electrode 50215 for orientation control. A second protrusion 502118 is formed on the second electrode 50216 for orientation control. On the side of the first substrate 50211 opposite to the liquid crystal layer, the first polarizing plate 50213
Is placed. On the side of the second substrate 50212 opposite to the liquid crystal layer, the second polarizing plate 5021
4 is arranged. The first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to form a cross Nicol.

The first polarizing plate 50213 may be arranged on the upper surface of the first substrate 50211. The second polarizing plate 50214 may be arranged on the upper surface of the second substrate 50212.

Of the first electrode 50215 and the second electrode 50216, at least one (or both) electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 135C is a schematic cross-sectional view when a voltage is applied to the first electrode 50215 and the second electrode 50216 (referred to as a longitudinal electric field method). Liquid crystal molecules are the first protrusions 502117
The light from the backlight is affected by the birefringence of the liquid crystal molecules because it is in a state of being tilted and lined up with respect to the second protrusion 502118. Since the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore, white display is performed.

By controlling the voltage applied to the first electrode 50215 and the second electrode 50216, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 135 (D) is a schematic cross-sectional view when no voltage is applied to the first electrode 50215 and the second electrode 50216. Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 50213 and the second polarizing plate 50213
Since the polarizing plate 50214 is arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate. Therefore, the black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the configurations shown in FIGS. 135 (C) and 135 (D) can perform full-color display by providing a color filter. The color filter is the first substrate 50211.
It can be provided on the side or the second substrate 50212 side.

As the liquid crystal material used in the MVA mode, a known one may be used.

FIGS. 136 (A) and 136 (B) show a schematic view of a cross section of the OCB mode. In the OCB mode, since the arrangement of the liquid crystal molecules in the liquid crystal layer optically forms a compensation state, the viewing angle dependence is small. This state of the liquid crystal molecule is called bend orientation.

The liquid crystal layer 50300 is sandwiched between the first substrate 50301 and the second substrate 50302 arranged so as to face each other. On the upper surface of the first substrate 50301, the first electrode 503
05 is formed. A second electrode 50306 is formed on the upper surface of the second substrate 50302. The first polarizing plate 50303 is arranged on the side opposite to the liquid crystal layer of the first substrate 50301. A second polarizing plate 50304 is arranged on the side opposite to the liquid crystal layer of the second substrate 50302. The first polarizing plate 50303 and the second polarizing plate 50304 are arranged so as to form a cross Nicol.

The first polarizing plate 50303 may be arranged on the upper surface of the first substrate 50301. The second polarizing plate 50304 may be arranged on the upper surface of the second substrate 50302.

Of the first electrode 50305 and the second electrode 50306, at least one (or both) of the electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 136 (A) is a schematic cross-sectional view when a voltage is applied to the first electrode 50305 and the second electrode 50306 (referred to as a longitudinal electric field method). Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the first polarizing plate 5
Since 0303 and the second polarizing plate 50304 are arranged so as to form a cross Nicol,
The light from the backlight does not pass through the substrate. Therefore, the black display is performed.

By controlling the voltage applied to the first electrode 50305 and the second electrode 50306, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 136 (B) is a schematic cross-sectional view when no voltage is applied to the first electrode 50305 and the second electrode 50306. Since the liquid crystal molecules are in a bend-oriented state, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 50303 and the second polarizing plate 50303
Since the polarizing plate 50304 of the above is arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore, white display is performed. This is the so-called normally white mode.

The liquid crystal display device having the configurations shown in FIGS. 136 (A) and 136 (B) can perform full-color display by providing a color filter. The color filter is the first substrate 50301.
It can be provided on the side or the second substrate 50302 side.

As the liquid crystal material used in the OCB mode, a known one may be used.

FIGS. 136 (C) and 136 (D) show a schematic cross-sectional view of the FLC mode or the AFLC mode.

The liquid crystal layer 50310 is sandwiched between the first substrate 50311 and the second substrate 50312 arranged so as to face each other. On the upper surface of the first substrate 50311, the first electrode 503
15 is formed. A second electrode 50316 is formed on the upper surface of the second substrate 50312. A first polarizing plate 50313 is arranged on the opposite side of the first substrate 50311 from the liquid crystal layer. A second polarizing plate 50314 is arranged on the opposite side of the second substrate 50312 from the liquid crystal layer. The first polarizing plate 50313 and the second polarizing plate 50314 are arranged so as to form a cross Nicol.

The first polarizing plate 50313 may be arranged on the upper surface of the first substrate 50311. The second polarizing plate 50314 may be arranged on the upper surface of the second substrate 50312.

Of the first electrode 50315 and the second electrode 50316, at least one (or both) electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 136 (C) is a schematic cross-sectional view when a voltage is applied to the first electrode 50315 and the second electrode 50316 (referred to as a longitudinal electric field method). Since the liquid crystal molecules are arranged side by side in a direction deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50313 and the second polarizing plate 50314 are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore,
White display is performed.

By controlling the voltage applied to the first electrode 50315 and the second electrode 50316, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 136 (D) is a schematic cross-sectional view when no voltage is applied to the first electrode 50315 and the second electrode 50316. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50313 and the second polarizing plate 50314 are arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate. Therefore, the black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the configurations shown in FIGS. 136 (C) and 136 (D) can perform full-color display by providing a color filter. The color filter is the first substrate 50311.
It can be provided on the side or the second substrate 50312 side.

As the liquid crystal material used in the FLC mode or the AFLC mode, a known liquid crystal material may be used.

FIGS. 137 (A) and 137 (B) show a schematic view of a cross section of the IPS mode. The IPS mode is a mode in which the liquid crystal molecules are always rotated in a plane with respect to the substrate because the arrangement of the liquid crystal molecules is optically compensated in the liquid crystal layer, and the electrodes are on only one substrate side. The provided transverse electric field method is adopted.

The liquid crystal layer 50400 is sandwiched between the first substrate 50401 and the second substrate 50402 arranged so as to face each other. On the upper surface of the first substrate 50401, the first electrode 504
05 and a second electrode 50406 are formed. A first polarizing plate 50403 is arranged on the opposite side of the first substrate 50401 from the liquid crystal layer. A second polarizing plate 50404 is arranged on the side opposite to the liquid crystal layer of the second substrate 50402. The first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to form a cross Nicol.

The first polarizing plate 50403 may be arranged on the upper surface of the first substrate 50401. The second polarizing plate 50404 may be arranged on the upper surface of the second substrate 50402.

Of the first electrode 50405 and the second electrode 50406, at least one (or both) electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 137 (A) is a schematic cross-sectional view when a voltage is applied to the first electrode 50405 and the second electrode 50406 (referred to as a longitudinal electric field method). Since the liquid crystal molecules are oriented along the lines of electric force deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore, white display is performed.

By controlling the voltage applied to the first electrode 50405 and the second electrode 50406, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 137 (B) is a schematic cross-sectional view when no voltage is applied to the first electrode 50405 and the second electrode 50406. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate. Therefore, the black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the configurations shown in FIGS. 137 (A) and 137 (B) can perform full-color display by providing a color filter. The color filter is the first substrate 50401.
It can be provided on the side or the second substrate 50402 side.

As the liquid crystal material used in the IPS mode, a known one may be used.

FIGS. 137 (C) and 137 (D) show a schematic view of a cross section of the FFS mode. The FFS mode is a mode in which the liquid crystal molecules are always rotated in a plane with respect to the substrate because the arrangement of the liquid crystal molecules is optically compensated in the liquid crystal layer, and the electrodes are on only one substrate side. The provided transverse electric field method is adopted.

The liquid crystal layer 50410 is sandwiched between the first substrate 50411 and the second substrate 50412 arranged so as to face each other. On the upper surface of the first substrate 50411, the second electrode 504
16 is formed. An insulating film 50417 is formed on the upper surface of the second electrode 50416. A second electrode 50416 is formed on the insulating film 50417. A first polarizing plate 50413 is arranged on the opposite side of the first substrate 50411 from the liquid crystal layer. A second polarizing plate 50414 is arranged on the opposite side of the second substrate 50412 from the liquid crystal layer. In addition, it should be noted.
The first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to form a cross Nicol.

The first polarizing plate 50413 may be arranged on the upper surface of the first substrate 50411. The second polarizing plate 50414 may be arranged on the upper surface of the second substrate 50412.

Of the first electrode 50415 and the second electrode 50416, at least one (or both) electrodes may have translucency (transmissive type or reflective type). Alternatively, both electrodes may be translucent and a part of one electrode may be reflective (semi-transmissive type).

FIG. 137 (C) is a schematic cross-sectional view when a voltage is applied to the first electrode 50415 and the second electrode 50416 (referred to as a longitudinal electric field method). Since the liquid crystal molecules are oriented along the lines of electric force deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate. Therefore, white display is performed.

By controlling the voltage applied to the first electrode 50415 and the second electrode 50416, it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 137 (D) is a schematic cross-sectional view when no voltage is applied to the first electrode 50415 and the second electrode 50416. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate. Therefore, the black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the configurations shown in FIGS. 137 (C) and 137 (D) can perform full-color display by providing a color filter. The color filter is the first substrate 50411.
It can be provided on the side or the second substrate 50412 side.

As the liquid crystal material used in the FFS mode, a known one may be used.

Next, various liquid crystal modes will be described with reference to the top view.

FIG. 138 shows a top view of the pixel portion to which the MVA mode is applied. The MVA mode is a method of compensating each other for the viewing angle dependence of each part.

FIG. 138 shows the first pixel electrode 50501 and the second pixel electrode (50502a, 50502b).
, 50502c), and protrusion 50503. The first pixel electrode 50501
It is formed on the entire surface of the facing substrate. The second pixel electrode (50) so that the shape is doglegged.
502a, 50502b, 50502c) are formed. Pixel electrode with a second shape (5)
0502a, 50502b, 50502c), so that the first pixel electrode 5050
Second pixel electrodes (50502a, 50502b, 50502c) are formed on the 1.

The openings of the second pixel electrodes (50502a, 50502b, 50502c) function like protrusions.

First pixel electrode 50501 and second pixel electrode (50502a, 50502b, 5050)
When a voltage is applied to 2c) (called a longitudinal electric field method), the liquid crystal molecules become the second pixel electrode (50).
502a, 50502b, 50502c) are in a state of being tilted and lined up with respect to the opening and the protrusion 50503. When the pair of polarizing plates are arranged so as to form a cross Nicol,
Since the light from the backlight passes through the substrate, a white display is performed.

The first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5)
By controlling the voltage applied to 0502c), it is possible to control the state of the liquid crystal molecules. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

First pixel electrode 50501 and second pixel electrode (50502a, 50502b, 5050)
When no voltage is applied to 2c), the liquid crystal molecules are arranged vertically. When the pair of polarizing plates are arranged so as to form a cross Nicol, the light from the backlight does not pass through the panel, so that a black display is performed. This is the so-called normally black mode.

As the liquid crystal material used in the MVA mode, a known one may be used.

139 (A), (B), (C), and (D) show top views of the pixel portion to which the IPS mode is applied. The IPS mode is a mode in which the liquid crystal molecules are always rotated in a plane with respect to the substrate because the arrangement of the liquid crystal molecules is optically compensated in the liquid crystal layer, and the electrodes are on only one substrate side. The provided transverse electric field method is adopted.

In the IPS mode, the pair of electrodes are formed to have different shapes.

FIG. 139 (A) shows the first pixel electrode 50601 and the second pixel electrode 50602. The first pixel electrode 50601 and the second pixel electrode 50602 have a wavy shape.

FIG. 139 (B) shows the first pixel electrode 50611 and the second pixel electrode 50612. The first pixel electrode 50611 and the second pixel electrode 50612 have a shape having concentric openings.

FIG. 139 (C) shows the first pixel electrode 50631 and the second pixel electrode 50632. The first pixel electrode 50631 and the second pixel electrode 50632 have a comb-like shape and a partially overlapping shape.

FIG. 139 (D) shows the first pixel electrode 50641 and the second pixel electrode 50642. The first pixel electrode 50641 and the second pixel electrode 50642 are comb-shaped and have a shape in which the electrodes mesh with each other.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50)
When a voltage is applied to 602, 50612, 50622, 50632) (referred to as a longitudinal electric field method), the liquid crystal molecules are in a state of being oriented along the lines of electric force deviated from the rubbing direction. When the pair of polarizing plates are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate, so that a white display is performed.

The state of the liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50601, 50611, 50621, 50631) and the second electrode (50602, 50612, 50622, 50632). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50)
When no voltage is applied to 602, 50612, 50622, 50632), the liquid crystal molecules are arranged side by side along the rubbing direction. When the pair of polarizing plates are arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate, so that a black display is performed. This is the so-called normal black mode.

As the liquid crystal material used in the IPS mode, a known one may be used.

FIGS. 140 (A), (B), (C), and (D) show top views of the pixel portion to which the FFS mode is applied. The FFS mode is a mode in which the liquid crystal molecules are always rotated in a plane with respect to the substrate because the arrangement of the liquid crystal molecules is optically compensated in the liquid crystal layer, and the electrodes are on only one substrate side. The provided transverse electric field method is adopted.

In the FFS mode, the first electrode is formed on the upper surface of the second electrode so as to have various shapes.

FIG. 140 (A) shows the first pixel electrode 50701 and the second pixel electrode 50702. The first pixel electrode 50701 has a bent dogleg shape. Second pixel electrode 5070
No. 2 does not have to be patterned.

FIG. 140 (B) shows the first pixel electrode 50711 and the second pixel electrode 50712. The first pixel electrode 50711 has a concentric shape. The second pixel electrode 50712 may not be patterned.

FIG. 140 (C) shows the first pixel electrode 50731 and the second pixel electrode 50732. The first pixel electrode 50731 is in the shape of a comb and has a shape in which the electrodes mesh with each other. Second
The pixel electrode 50732 of the above may not be patterned.

FIG. 140 (D) shows the first pixel electrode 50741 and the second pixel electrode 50742. The first pixel electrode 50741 has a comb-like shape. The second pixel electrode 50742
It does not have to be patterned.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50)
When a voltage is applied to (702, 50712, 50722, 50732) (referred to as a longitudinal electric field method), the liquid crystal molecules are in a state of being oriented along the lines of electric force deviated from the rubbing direction. When the pair of polarizing plates are arranged so as to form a cross Nicol, the light from the backlight passes through the substrate, so that a white display is performed.

The state of the liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50701, 50711, 50721, 50731) and the second electrode (50702, 50712, 50722, 50732). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, it is possible to display a predetermined image.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50)
When no voltage is applied to 702, 50712, 50722, 50732), the liquid crystal molecules are arranged side by side along the rubbing direction. When the pair of polarizing plates are arranged so as to form a cross Nicol, the light from the backlight does not pass through the substrate, so that a black display is performed. This is the so-called normal black mode.

As the liquid crystal material used in the IPS mode, a known one may be used.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 10)
In the present embodiment, the pixel structure of the display device will be described. In particular, the pixel structure of the liquid crystal display device will be described.

The pixel structure when each liquid crystal mode and the transistor are combined will be described with reference to the cross-sectional view of the pixel.

As the transistor, a thin film transistor (TFT) having a non-single crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystal (also referred to as microcrystal or semi-amorphous) silicon, or the like can be used.

As the transistor structure, a top gate type, a bottom gate type, or the like can be used. As the bottom gate type transistor, a channel etch type or a channel protection type can be used.

FIG. 85 is an example of a cross-sectional view of a pixel when the TN method and the transistor are combined.
By applying the pixel structure shown in FIG. 85 to the liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

The features of the pixel structure shown in FIG. 85 will be described. The liquid crystal molecule 10118 shown in FIG. 85 is
It is an elongated molecule with a major axis and a minor axis. In order to show the orientation of the liquid crystal molecule 10118, it is represented by its length in FIG. 85. That is, the long-represented liquid crystal molecule 1011
In No. 8, the direction of the long axis is parallel to the paper surface, and it is assumed that the shorter the liquid crystal molecule 10118 is, the closer the direction of the long axis is to the normal direction of the paper surface. That is, the liquid crystal molecules 10118 shown in FIG. 85 differ in the orientation of the long axis by 90 degrees between those close to the first substrate 10101 and those close to the second substrate 10116, and are located in the middle of these. Liquid crystal molecule 101
The orientation of the long axis of 18 is such that they are smoothly connected. That is, the liquid crystal molecule 10118 shown in FIG. 85 is 90 between the first substrate 10101 and the second substrate 10116.
The orientation is twisted.

A case where a bottom gate type transistor using an amorphous semiconductor is used as the transistor will be described. When a transistor using an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost by using a large-area substrate.

The liquid crystal display device has a core portion for displaying an image, which is called a liquid crystal panel. The liquid crystal panel consists of two processed substrates that are bonded together with a gap of several micrometers.
It is produced by injecting a liquid crystal material between two substrates. In FIG. 85, the two substrates are
The first substrate 10101 and the second substrate 10116. Transistors and pixel electrodes are formed on the first substrate. The second substrate has a light-shielding film 10114 and a color filter 101.
15, the fourth conductive layer 10113, the spacer 10117, and the second alignment film 10112 are formed.

The light-shielding film 10114 may not be formed on the second substrate 10116. Light-shielding film 1
When 0114 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light-shielding film 1011
When 4 is formed, it is possible to obtain a display device having less light leakage at the time of black display.

The color filter 10115 may not be formed on the second substrate 10116.
When the color filter 10115 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10115 is not formed, it is possible to obtain a display device capable of color display by field sequential drive. On the other hand, the color filter 1011
When forming 5, a display device capable of color display can be obtained.

Instead of the spacer 10117, a spherical spacer may be sprayed. When the spherical spacer is sprayed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, when the spacer 10117 is formed, the positions of the spacers do not vary, so that the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

The processing performed on the first substrate 10101 will be described.

First, the first insulating film 10102 is formed on the first substrate 10101 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10102 may not be formed. The first insulating film 10102 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, on the first insulating film 10102, the first conductive layer 10103 is subjected to a photolithography method.
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, the second insulating film 10104 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10104, impurities from the substrate affect the semiconductor layer, and the semiconductor layer is affected.
It has a function to prevent the properties of the transistor from changing.

Next, the first semiconductor layer 10105 and the second semiconductor layer 10106 are formed. The first semiconductor layer 10105 and the second semiconductor layer 10106 are continuously formed into a film, and their shapes are processed at the same time.

Next, the second conductive layer 10107 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. As the etching method performed when the shape of the second conductive layer 10107 is processed, it is preferable to perform it by dry etching. In addition, it should be noted.
As the second conductive layer 10107, a transparent material may be used, or a reflective material may be used.

Next, the channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10106 is etched using the second conductive layer 10107 as a mask. Alternatively, it is etched using a mask for processing the shape of the second conductive layer 10107. Then, the first conductive layer 10103 of the portion from which the second semiconductor layer 10106 is removed becomes the transistor and the channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10108 is formed, and a contact hole is selectively formed in the third insulating film 10108. At the same time that the contact hole is formed in the third insulating film 10108, the contact hole may be formed in the second insulating film 10104 as well. In addition, it should be noted.
The surface of the third insulating film 10108 is preferably as flat as possible. This is because the orientation of the liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10109 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, the first alignment film 10110 is formed. After forming the first alignment film 10110,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of forming streaks on the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be made oriented.

The first substrate 10101 produced as described above, the light-shielding film 10114, and the color filter 10
115, the fourth conductive layer 10113, the spacer 10117, and the second substrate 10116 on which the second alignment film 10112 is formed are bonded to each other with a gap of several micrometers by a sealing material. Then, the liquid crystal material is injected between the two substrates. In the TN method, the fourth conductive layer 10113 is formed on the entire surface of the second substrate 10116.

FIG. 86 (A) shows MVA (Multi-domain Vertical Alignm).
This is an example of a cross-sectional view of a pixel when the ent) method and a transistor are combined. FIG. 86
By applying the pixel structure shown in (A) to a liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle, a high response speed, and a high contrast.

The features of the pixel structure shown in FIG. 86 (A) will be described. The features of the pixel structure of the MVA type liquid crystal panel will be described. The liquid crystal molecule 10218 shown in FIG. 86 (A) is an elongated molecule having a major axis and a minor axis. In order to show the orientation of the liquid crystal molecule 10218, it is represented by its length in FIG. 86 (A). That is, the long-represented liquid crystal molecule 10218
It is assumed that the direction of the long axis is parallel to the paper surface, and the shorter the liquid crystal molecule 10218 is, the closer the direction of the long axis is to the normal direction of the paper surface. That is, the liquid crystal molecule 10218 shown in FIG. 86 (A) is oriented so that the direction of the long axis thereof faces the normal direction of the alignment film. Therefore, the liquid crystal molecule 10218 in the portion of the orientation control protrusion 10219 is the orientation control protrusion 102.
It is oriented radially around 19. In this state, a liquid crystal display device having a large viewing angle can be obtained.

A case where a bottom gate type transistor using an amorphous semiconductor is used as the transistor will be described. When a transistor using an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost by using a large-area substrate.

The liquid crystal display device has a core portion for displaying an image, which is called a liquid crystal panel. The liquid crystal panel consists of two processed substrates that are bonded together with a gap of several micrometers.
It is produced by injecting a liquid crystal material between two substrates. In FIG. 86 (A), the two substrates are the first substrate 10201 and the second substrate 10216. A transistor and a pixel electrode are formed on the first substrate. The second substrate has a light-shielding film 10214, a color filter 10215, a fourth conductive layer 10213, a spacer 10217, and a second alignment film 1021.
2. And the orientation control protrusion 10219 are formed.

The light-shielding film 10214 may not be formed on the second substrate 10216. Light-shielding film 1
When 0214 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light-shielding film 1021
When 4 is formed, it is possible to obtain a display device having less light leakage at the time of black display.

The color filter 10215 may not be formed on the second substrate 10216.
When the color filter 10215 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10215 is not manufactured, it is possible to obtain a display device capable of color display by field sequential drive. On the other hand, the color filter 1021
When forming 5, a display device capable of color display can be obtained.

Instead of the spacer 10217, a spherical spacer may be sprayed on the second substrate 10216. When the spherical spacer is sprayed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacer 10217 is formed, the positions of the spacers do not vary, so that the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

The processing performed on the first substrate 10201 will be described.

First, the first insulating film 10202 is formed on the first substrate 10201 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10202 may not be formed. The first insulating film 10202 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, on the first insulating film 10202, the first conductive layer 10203 is subjected to a photolithography method.
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, the second insulating film 10204 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10204, impurities from the substrate affect the semiconductor layer, and
It has a function to prevent the properties of the transistor from changing.

Next, the first semiconductor layer 10205 and the second semiconductor layer 10206 are formed. The first semiconductor layer 10205 and the second semiconductor layer 10206 are continuously formed into a film, and their shapes are processed at the same time.

Next, the second conductive layer 10207 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. As the etching method performed when the shape of the second conductive layer 10207 is processed, it is preferable to perform it by dry etching. In addition, it should be noted.
As the second conductive layer 10207, a transparent material may be used, or a reflective material may be used.

Next, the channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10206 is etched using the second conductive layer 10207 as a mask. Alternatively, it is etched using a mask for processing the shape of the second conductive layer 10207. Then, the first conductive layer 10203 of the portion from which the second semiconductor layer 10206 is removed becomes the transistor and the channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10208 is formed, and a contact hole is selectively formed in the third insulating film 10208. At the same time that the contact hole is formed in the third insulating film 10208, the contact hole may be formed in the second insulating film 10204 as well.

Next, the third conductive layer 10209 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, the first alignment film 10210 is formed. After forming the first alignment film 10210,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of forming streaks on the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be made oriented.

The first substrate 10201 produced as described above, the light-shielding film 10214, and the color filter 10
The 215, the fourth conductive layer 10213, the spacer 10217, and the second substrate 10216 on which the second alignment film 10212 is formed are bonded to each other with a sealing material having a gap of several micrometers. Then, the liquid crystal material is injected between the two substrates. In addition, MVA
In the method, the fourth conductive layer 10213 is formed on the entire surface of the second substrate 10216.
The orientation control protrusion 10219 is formed in contact with the fourth conductive layer 10213.
The shape of the orientation control protrusion 10219 is preferably a shape having a smooth curved surface.
By doing so, the orientations of the adjacent liquid crystal molecules 10218 become extremely close to each other, so that poor orientation can be reduced. It is possible to reduce the defects of the alignment film caused by the step breakage of the alignment film.

FIG. 86 (B) shows PVA (Paterned Vertical Alignment).
This is an example of a cross-sectional view of a pixel when a method and a transistor are combined. By applying the pixel structure shown in FIG. 86 (B) to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle, a high response speed, and a high contrast.

The features of the pixel structure shown in FIG. 86 (B) will be described. Liquid crystal molecule 1 shown in FIG. 86 (B)
0248 is an elongated molecule having a major axis and a minor axis. In order to show the orientation of the liquid crystal molecule 10248, it is represented by its length in FIG. 86 (B). That is, it is assumed that the orientation of the long axis of the long-represented liquid crystal molecule 10248 is parallel to the paper surface, and the shorter the representation of the liquid crystal molecule 10248, the closer the orientation of the long axis is to the normal direction of the paper surface. .. That is, the liquid crystal molecule 10248 shown in FIG. 86 (B) is oriented so that the direction of the long axis thereof faces the normal direction of the alignment film. Therefore, the liquid crystal molecule 10248 in the portion where the electrode notch portion 10249 is located.
Is oriented radially around the boundary between the electrode cutout portion 10249 and the fourth conductive layer 10243. In this state, a liquid crystal display device having a large viewing angle can be obtained.

A case where a bottom gate type transistor using an amorphous semiconductor is used as the transistor will be described. When a transistor using an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost by using a large-area substrate.

The liquid crystal display device has a core portion for displaying an image, which is called a liquid crystal panel. The liquid crystal panel consists of two processed substrates that are bonded together with a gap of several micrometers.
It is produced by injecting a liquid crystal material between two substrates. In FIG. 86 (B), the two substrates are the first substrate 10231 and the second substrate 10246. A transistor and a pixel electrode are formed on the first substrate. The second substrate includes a light-shielding film 10244, a color filter 10245, a fourth conductive layer 10243, a spacer 10247, and a second alignment film 1.
0242 is formed.

The light-shielding film 10244 may not be formed on the second substrate 10246. Light-shielding film 1
When 0244 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light-shielding film 1024
When 4 is formed, it is possible to obtain a display device having less light leakage at the time of black display.

The color filter 10245 may not be formed on the second substrate 10246.
When the color filter 10245 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even if the color filter 10245 is not manufactured, it is possible to obtain a display device capable of color display by field sequential drive. On the other hand, the color filter 1024
When forming 5, a display device capable of color display can be obtained.

Instead of the spacer 10247, a spherical spacer may be sprayed on the second substrate 10246. When the spherical spacer is sprayed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacer 10247 is formed, the positions of the spacers do not vary, so that the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

The processing performed on the first substrate 10231 will be described.

First, a first insulating film 10232 is formed on the first substrate 10231 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10232 may not be formed. The first insulating film 10232 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, on the first insulating film 10232, the first conductive layer 10233 is formed by a photolithography method.
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, the second insulating film 10234 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10234, impurities from the substrate affect the semiconductor layer, and the semiconductor layer is affected.
It has a function to prevent the properties of the transistor from changing.

Next, the first semiconductor layer 10235 and the second semiconductor layer 10236 are formed. The first semiconductor layer 10235 and the second semiconductor layer 10236 are continuously formed into a film, and at the same time, their shapes are processed.

Next, the second conductive layer 10237 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. As the etching method performed when the shape of the second conductive layer 10237 is processed, it is preferable to perform it by dry etching. In addition, it should be noted.
As the second conductive layer 10237, a transparent material may be used, or a reflective material may be used.

Next, the channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10236 is etched using the second conductive layer 10237 as a mask. Alternatively, it is etched using a mask for processing the shape of the second conductive layer 10237. Then, the first conductive layer 10233 of the portion from which the second semiconductor layer 10236 has been removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10238 is formed, and a contact hole is selectively formed in the third insulating film 10238. At the same time that the contact hole is formed in the third insulating film 10238, the contact hole may be formed in the second insulating film 10234 as well. In addition, it should be noted.
The surface of the third insulating film 10238 is preferably as flat as possible. This is because the orientation of the liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10239 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, the first alignment film 10240 is formed. After forming the first alignment film 10240,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of forming streaks on the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be made oriented.

The first substrate 10231 prepared as described above, the light-shielding film 10244, and the color filter 10
245, the fourth conductive layer 10243, the spacer 10247, and the second substrate 10246 on which the second alignment film 10242 is formed are bonded to each other with a sealing material having a gap of several micrometers. Then, the liquid crystal material is injected between the two substrates. In addition, PVA
In the method, the fourth conductive layer 10243 is patterned, and the electrode notch 10249
Is formed. The shape of the electrode cutout portion 10249 is not limited, but it is preferably a shape in which a plurality of rectangles having different orientations are combined. By doing so, a plurality of regions having different orientations can be formed, so that a liquid crystal display device having a large viewing angle can be obtained. The fourth conductive layer 10 at the boundary between the electrode cutout portion 10249 and the fourth conductive layer 10243.
The shape of 243 is preferably a smooth curve. By doing so, the orientations of the adjacent liquid crystal molecules 10248 become very close to each other, so that the orientation defects are reduced. Second alignment film 10
Defects in the alignment film due to the 242 being stepped by the electrode cutout portion 10249 can also be reduced.

FIG. 87 (A) is an example of a cross-sectional view of a pixel when an IPS (In-Plane-Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87 (A) to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle and a small gradation dependence of the response speed in principle.

The features of the pixel structure shown in FIG. 87 (A) will be described. Liquid crystal molecule 1 shown in FIG. 87 (A)
0318 is an elongated molecule having a major axis and a minor axis. In order to show the orientation of the liquid crystal molecule 10318, it is represented by its length in FIG. 87 (A). That is, it is assumed that the long-represented liquid crystal molecule 10318 has a major axis direction parallel to the paper surface, and the shorter-represented liquid crystal molecule 10318 has a long-axis direction closer to the normal direction of the paper surface. .. That is, the liquid crystal molecule 10318 shown in FIG. 87 (A) is oriented so that its long axis always faces the horizontal direction with respect to the substrate. In FIG. 87 (A), the orientation is shown in the absence of an electric field, but when an electric field is applied to the liquid crystal molecule 10318, the direction of its long axis is always kept horizontal to the substrate and is in the horizontal plane. Rotate with. In this state, a liquid crystal display device having a large viewing angle can be obtained.

A case where a bottom gate type transistor using an amorphous semiconductor is used as the transistor will be described. When a transistor using an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost by using a large-area substrate.

The liquid crystal display device has a core portion for displaying an image, which is called a liquid crystal panel. The liquid crystal panel consists of two processed substrates that are bonded together with a gap of several micrometers.
It is produced by injecting a liquid crystal material between two substrates. In FIG. 87 (A), the two substrates are the first substrate 10301 and the second substrate 10316. A transistor and a pixel electrode are formed on the first substrate. A light-shielding film 10314, a color filter 10315, a spacer 10317, and a second alignment film 10312 are formed on the second substrate.

The light-shielding film 10314 may not be formed on the second substrate 10316. Light-shielding film 1
When 0314 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light-shielding film 1031
When 4 is formed, it is possible to obtain a display device having less light leakage at the time of black display.

The color filter 10315 may not be formed on the second substrate 10316.
When the color filter 10315 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. However, even when the color filter 10315 is not formed, it is possible to obtain a display device capable of color display by field sequential drive. Since the structure is simple, the yield can be improved. On the other hand, color filter 1031
When forming 5, a display device capable of color display can be obtained.

Instead of the spacer 10317, a spherical spacer may be sprayed on the second substrate 10316. When the spherical spacer is sprayed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacer 10317 is formed, the positions of the spacers do not vary, so that the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

The processing performed on the first substrate 10301 will be described.

First, the first insulating film 10302 is formed on the first substrate 10301 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10302 may not be formed. The first insulating film 10302 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, on the first insulating film 10302, the first conductive layer 10303 is subjected to a photolithography method.
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, the second insulating film 10304 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10304, impurities from the substrate affect the semiconductor layer, and the semiconductor layer is affected.
It has a function to prevent the properties of the transistor from changing.

Next, the first semiconductor layer 10305 and the second semiconductor layer 10306 are formed. The first semiconductor layer 10305 and the second semiconductor layer 10306 are continuously formed into a film, and their shapes are processed at the same time.

Next, the second conductive layer 10307 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. As the etching method performed when the shape of the second conductive layer 10307 is processed, it is preferable to perform it by dry etching. In addition, it should be noted.
As the second conductive layer 10307, a transparent material may be used, or a reflective material may be used.

Next, the channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10306 is etched using the second conductive layer 10307 as a mask. Alternatively, it is etched using a mask for processing the shape of the second conductive layer 10307. Then, the first conductive layer 10303 of the portion from which the second semiconductor layer 10306 has been removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10308 is formed, and a contact hole is selectively formed in the third insulating film 10308. At the same time that the contact hole is formed in the third insulating film 10308, the contact hole may be formed in the second insulating film 10304 as well.

Next, the third conductive layer 10309 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Here, the shape of the third conductive layer 10309 is two comb teeth that mesh with each other. One comb-shaped electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and the other comb-shaped electrode is electrically connected to the common electrode. By doing so, a lateral electric field can be effectively applied to the liquid crystal molecule 10318.

Next, the first alignment film 10310 is formed. After forming the first alignment film 10310,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of forming streaks on the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be made oriented.

The first substrate 10301 produced as described above, the light-shielding film 10314, and the color filter 10
The 315, the spacer 10317, and the second alignment film 10312 are bonded together by a sealing material with a gap of several micrometers. Then, the liquid crystal material is injected between the two substrates.

FIG. 87 (B) is an example of a cross-sectional view of a pixel when the FFS (Fringe Field Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87 (B) to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle and a small gradation dependence of the response speed in principle.

The features of the pixel structure shown in FIG. 89 (B) will be described. Liquid crystal molecule 1 shown in FIG. 89 (B)
0348 is an elongated molecule having a major axis and a minor axis. In order to show the orientation of the liquid crystal molecule 10348, it is represented by its length in FIG. 89 (B). That is, it is assumed that the orientation of the long axis of the long-expressed liquid crystal molecule 10348 is parallel to the paper surface, and the shorter the expressed liquid crystal molecule 10348 is closer to the normal direction of the paper surface. .. That is, the liquid crystal molecule 10348 shown in FIG. 89 (B) is oriented so that its long axis always faces the horizontal direction with respect to the substrate. In FIG. 89B, the orientation is shown in the absence of an electric field, but when an electric field is applied to the liquid crystal molecule 10348, the direction of its long axis is always kept horizontal to the substrate and is in the horizontal plane. Rotate with. In this state, a liquid crystal display device having a large viewing angle can be obtained.

A case where a bottom gate type transistor using an amorphous semiconductor is used as the transistor will be described. When a transistor using an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost by using a large-area substrate.

The liquid crystal display device has a core portion for displaying an image, which is called a liquid crystal panel. The liquid crystal panel consists of two processed substrates that are bonded together with a gap of several micrometers.
It is produced by injecting a liquid crystal material between two substrates. In FIG. 89B, the two substrates are the first substrate 10331 and the second substrate 10346. Transistors and pixel electrodes are formed on the first substrate, and the light-shielding film 10344 and the color filter 1 are formed on the second substrate.
0345, spacer 10347, and second alignment film 10342 are formed.

The light-shielding film 10344 may not be formed on the second substrate 10346. Light-shielding film 1
When 0344 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light-shielding film 1034
When 4 is formed, it is possible to obtain a display device having less light leakage at the time of black display.

The color filter 10345 may not be formed on the second substrate 10346.
When the color filter 10345 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10345 is not formed, it is possible to obtain a display device capable of color display by field sequential drive. On the other hand, the color filter 1034
When forming 5, a display device capable of color display can be obtained.

Instead of the spacer 10347, a spherical spacer may be sprayed on the second substrate 10346. When the spherical spacer is sprayed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacer 10347 is formed, the positions of the spacers do not vary, so that the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

The processing performed on the first substrate 10331 will be described.

First, the first insulating film 10332 is formed on the first substrate 10331 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10332 may not be formed. The first insulating film 10332 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, on the first insulating film 10332, the first conductive layer 10333 is subjected to a photolithography method.
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, the second insulating film 10334 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10334, impurities from the substrate affect the semiconductor layer, and the second insulating film 10334 has an influence on the semiconductor layer.
It has a function to prevent the properties of the transistor from changing.

Next, the first semiconductor layer 10335 and the second semiconductor layer 10336 are formed. The first semiconductor layer 10335 and the second semiconductor layer 10336 are continuously formed into a film, and their shapes are processed at the same time.

Next, the second conductive layer 10337 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. As the etching method performed when the shape of the second conductive layer 10337 is processed, it is preferable to perform it by dry etching. In addition, it should be noted.
As the second conductive layer 10337, a transparent material may be used, or a reflective material may be used.

Next, the channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10336 is etched using the second conductive layer 10337 as a mask. Alternatively, it is etched using a mask for processing the shape of the second conductive layer 10337. Then, the first conductive layer 10333 of the portion from which the second semiconductor layer 10336 has been removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10338 is formed, and a contact hole is selectively formed in the third insulating film 10338.

Next, the fourth conductive layer 10343 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a fourth insulating film 10349 is formed, and a contact hole is selectively formed in the fourth insulating film 10349. The surface of the fourth insulating film 10349 is preferably as flat as possible. This is because the orientation of the liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10339 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Here, the shape of the third conductive layer 10339 is a comb-teeth shape.

Next, the first alignment film 10340 is formed. After forming the first alignment film 10340,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of forming streaks on the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be made oriented.

The first substrate 10331 manufactured as described above, the light-shielding film 10344, and the color filter 10
A liquid crystal panel can be produced by laminating the 345, the spacer 10347, and the second alignment film 10342 with a gap of several micrometers by a sealing material, and injecting a liquid crystal material between the two substrates.

Here, the materials that can be used for each conductive layer or each insulating film will be described.

The first insulating film 10102 in FIG. 85, the first insulating film 10202 in FIG. 86 (A), and FIG. 86 (B).
The first insulating film 10232 in FIG. 87 (A), the first insulating film 10302 in FIG. 87 (A), and the first insulating film 10332 in FIG. 87 (B) are a silicon oxide film, a silicon nitride film, or a silicon nitride film ( An insulating film such as SiOxNy) can be used. Alternatively, the first insulating film 101
As 02, an insulating film having a laminated structure in which two or more films such as a silicon oxide film, a silicon nitride film, and a silicon oxide nitride film (SiOxNy) are combined can be used.

The first conductive layer 10103 of FIG. 85, the first conductive layer 10203 of FIG. 86 (A), and FIG. 86 (B).
), The first conductive layer 10333 in FIG. 87 (A), the first conductive layer 10303 in FIG. 87 (A), and the first conductive layer 10333 in FIG. 87 (B). Mo, Ti
, Al, Nd, Cr and the like can be used. Alternatively, Mo, Ti, Al, Nd, C
A laminated structure in which two or more of r and the like are combined can also be used.

The second insulating film 10104 in FIG. 85, the second insulating film 10204 in FIG. 86 (A), and FIG. 86 (B).
The second insulating film 10234 in FIG. 87 (A), the second insulating film 10304 in FIG. 87 (A), and the second insulating film 10334 in FIG. 87 (B) are a thermal oxide film, a silicon oxide film, a silicon nitride film, or an oxide. A silicon nitride film or the like can be used. Alternatively, a laminated structure in which two or more of a thermal oxide film, a silicon oxide film, a silicon nitride film, a silicon oxide nitride film, and the like are combined can be used. The portion in contact with the semiconductor layer is preferably a silicon oxide film. This is because the silicon oxide film reduces the trap level at the interface with the semiconductor layer. The portion in contact with Mo is preferably a silicon nitride film.
This is because the silicon nitride film does not oxidize Mo.

First semiconductor layer 10105 in FIG. 85, first semiconductor layer 10205 in FIG. 86 (A), FIG. 86.
The first semiconductor layer 10235 of FIG. 87 (B), the first semiconductor layer 10305 of FIG. 87 (A), FIG. 87.
The first semiconductor layer 10335 of (B) is silicon or silicon germanium (Si).
Ge) and the like can be used.

Second semiconductor layer 10106 in FIG. 85, second semiconductor layer 10206 in FIG. 86 (A), FIG. 86.
The second semiconductor layer 10236 of FIG. 87 (B), the second semiconductor layer 10306 of FIG. 87 (A), FIG. 87.
As the second semiconductor layer 10336 of (B), silicon or the like containing phosphorus or the like can be used.

The second conductive layer 10107 and the third conductive layer 10109 in FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 86 (A), the second conductive layer 10237 in FIG. 86 (B), and The second conductive layer 10239, the second conductive layer 10307 of FIG. 87 (A), and the second conductive layer 1
As a transparent material of 0309, or the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 of FIG. 87 (B), indium tin oxide in which tin oxide is mixed with indium oxide is used. (ITO) film, indium tin oxide (ITSO) film in which silicon oxide is mixed with indium tin oxide (ITO), indium zinc oxide (IZO) film in which zinc oxide is mixed with indium oxide, zinc oxide film or oxidation. A tin film or the like can be used. IZO is a transparent conductive material formed by sputtering using a target in which 2 to 20 wt% zinc oxide (ZnO) is mixed with ITO.

The second conductive layer 10107 and the third conductive layer 10109 in FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 86 (A), the second conductive layer 10237 in FIG. 86 (B), and The second conductive layer 10239, the second conductive layer 10307 of FIG. 87 (A), and the second conductive layer 1
Examples of the reflective material of 0309, or the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 87 (B) are Ti, Mo, Ta, Cr, and W.
, Al and the like can be used. Alternatively, a two-layer structure in which Ti, Mo, Ta, Cr, W and Al are laminated, or a three-layer laminated structure in which Al is sandwiched between metals such as Ti, Mo, Ta, Cr and W may be used.

The third insulating film 10108 in FIG. 85, the third insulating film 10208 in FIG. 86 (A), and FIG. 86 (B).
10238, the third conductive layer 10239 in FIG. 86 (B), the third insulating film 10308 in FIG. 87 (A), the third insulating film 10338 and the fourth in FIG. 87 (B). Insulation film 10
As 349, an inorganic material (silicon oxide, silicon nitride, silicon oxide nitride, etc.), an organic compound material having a low dielectric constant (photosensitive or non-photosensitive organic resin material), or the like can be used. Alternatively, a material containing siloxane can also be used. Siloxane is a material whose skeletal structure is composed of a bond between silicon (Si) and oxygen (O). As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent.

The first alignment film 10110 in FIG. 85, the first alignment film 10210 in FIG. 86 (A), and FIG. 86 (B).
), The first alignment film 10340 in FIG. 86 (B), and the first alignment film 10340 in FIG. 87 (B) can be a polymer film such as polyimide.

Next, the pixel structure when each liquid crystal mode and the transistor are combined will be described with reference to the top view (layout view) of the pixels.

The liquid crystal mode includes TN (Twisted Nematic) mode and IPS (IPS).
In-Plane-Switching mode, FFS (Fringe Field)
Switching) mode, MVA (Multi-domain Vertical)
Alginment) mode, PVA (Patterned Vertical Ali)
gnment), ASM (Axially Symmetrically named Mi)
Cro-cell) mode, OCB (Optical Contracted Bir)
Efringence mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liqui)
d Crystal) and the like can be used.

As the transistor, a thin film transistor (TFT) having a non-single crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystal (also referred to as microcrystal or semi-amorphous) silicon, or the like can be used.

As the transistor structure, a top gate type, a bottom gate type, or the like can be used. As the bottom gate type transistor, a channel etch type, a channel protection type, or the like can be used.

FIG. 88 is an example of a top view of the pixels when the TN method and the transistor are combined.
By applying the pixel structure shown in FIG. 88 to the liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

The pixels shown in FIG. 88 are a scanning line 10401, a video signal line 10402, and a capacitance line 10403.
It has a transistor 10404, a pixel electrode 10405, and a pixel capacity 10406.

The scanning line 10401 has a function of transmitting a signal (scanning signal) to the pixels. Video signal line 10
The 402 has a function for transmitting a signal (video signal) to the pixels. The scanning line 104
Since 01 and the video signal line 10402 are arranged in a matrix, they are formed of different conductive layers. It should be noted that the scanning line is 10401. A semiconductor layer may be arranged at the intersection with the video signal line 10402. By doing so, the scanning line is 10401. Video signal line 10
The cross capacitance with 402 can be reduced.

The capacitance line 10403 is arranged parallel to the pixel electrode 10405. The portion where the capacitance line 10403 and the pixel electrode 10405 are arranged so as to overlap each other is the pixel capacitance 10406. A part of the capacitance line 10403 extends along the video signal line 10402 so as to surround the video signal line 10402. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of the electrode that should hold the potential changes with the change in the potential of the video signal line 10402. The capacitance line 10403 and the video signal line 1040
By arranging the semiconductor layer between the two, the cross capacitance can be reduced. In addition, it should be noted.
The capacitance line 10403 is made of the same material as the scanning line 10401.

The transistor 10404 has a function as a switch for conducting the video signal line 10402 and the pixel electrode 10405. One of the source region and the drain region of the transistor 10404 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10404. By doing so, the channel width of the transistor 10404 becomes large, so that the switching ability can be improved. Transistor 10404
The gate electrodes of the above are arranged so as to surround the semiconductor layer.

The pixel electrode 10405 is electrically connected to one of the source electrode and the drain electrode of the transistor 10404. The pixel electrode 10405 is an electrode for applying the signal voltage transmitted by the video signal line 10402 to the liquid crystal element. The pixel electrode 10405 is rectangular. By doing so, the aperture ratio of the pixels can be increased. The pixel electrode 1040
As 5, a transparent material or a reflective material can be used. Alternatively, a transparent material and a reflective material may be combined and used for the pixel electrode 10405.

FIG. 89A is an example of a top view of the pixels when the MVA method and the transistor are combined. By applying the pixel structure shown in FIG. 89A to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle, a high response speed, and a high contrast.

The pixels shown in FIG. 89 (A) are a scanning line 10501, a video signal line 10502, and a capacitance line 10.
503, transistor 10504, pixel electrode 10505, pixel capacity 10506,
It has an orientation control protrusion 10507.

The scanning line 10501 has a function of transmitting a signal (scanning signal) to the pixels. Video signal line 10
The 502 has a function for transmitting a signal (video signal) to the pixels. The scanning line 105
Since 01 and the video signal line 10502 are arranged in a matrix, they are formed of different conductive layers. In addition, with scanning line 10501. A semiconductor layer may be arranged at the intersection with the video signal line 10502. By doing this, the scanning line 10501. Video signal line 10
The cross capacitance with 502 can be reduced.

The capacitance line 10503 is arranged parallel to the pixel electrode 10505. The portion where the capacitance line 10503 and the pixel electrode 10505 are arranged so as to overlap each other has a pixel capacitance of 10506. A part of the capacitance line 10503 extends along the video signal line 10502 so as to surround the video signal line 10502. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of the electrode that should hold the potential changes with the change in the potential of the video signal line 10502. The capacitance line 10503 and the video signal line 1050
By arranging the semiconductor layer between the two, the cross capacitance can be reduced. In addition, it should be noted.
The capacitance line 10503 is made of the same material as the scanning line 10501.

The transistor 10504 has a function as a switch for conducting the video signal line 10502 and the pixel electrode 10505. One of the source region and the drain region of the transistor 10504 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10504. By doing so, the channel width of the transistor 10504 is increased, so that the switching ability can be improved. Transistor 10504
The gate electrodes of the above are arranged so as to surround the semiconductor layer.

The pixel electrode 10505 is electrically connected to one of the source electrode and the drain electrode of the transistor 10504. The pixel electrode 10505 is an electrode for applying the signal voltage transmitted by the video signal line 10502 to the liquid crystal element. The pixel electrode 10505 is rectangular. By doing so, the aperture ratio of the pixels can be increased. The pixel electrode 1050
As 5, a transparent material or a reflective material can be used. Alternatively, a transparent material and a reflective material may be combined and used for the pixel electrode 10505.

The orientation control protrusion 10507 is formed on the facing substrate. The orientation control protrusion 10507 has a function of radially aligning liquid crystal molecules. The shape of the orientation control protrusion 10507 is not limited. For example, the shape of the orientation control protrusion 10507 may be doglegged. By doing so, it is possible to form a plurality of regions in which the orientation of the liquid crystal molecules is different. The viewing angle can be improved.

FIG. 89B is an example of a top view of the pixels when the PVA method and the transistor are combined. By applying the pixel structure shown in FIG. 89 (B) to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle, a high response speed, and a high contrast.

The pixels shown in FIG. 89B are a scanning line 10511, a video signal line 10512, and a capacitance line 10.
513, transistor 10514, pixel electrode 10515, pixel capacitance 10516,
It has an electrode notch 10517.

The scanning line 10511 has a function of transmitting a signal (scanning signal) to the pixels. Video signal line 10
The 512 has a function for transmitting a signal (video signal) to the pixels. The scanning line 105
Since the 11 and the video signal line 10512 are arranged in a matrix, they are formed of different conductive layers. In addition, with scanning line 10511. A semiconductor layer may be arranged at the intersection with the video signal line 10512. By doing so, the scanning line 10511. Video signal line 10
It is possible to reduce the cross capacitance with 512.

The capacitance line 10513 is arranged parallel to the pixel electrode 10515. The portion where the capacitance line 10513 and the pixel electrode 10515 are arranged so as to overlap each other is the pixel capacitance 10516. A part of the capacitance line 10513 extends along the video signal line 10512 so as to surround the video signal line 10512. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of the electrode that should hold the potential changes with the change in the potential of the video signal line 10512. The capacitance line 10513 and the video signal line 1051
By arranging the semiconductor layer between the two, the cross capacitance can be reduced. In addition, it should be noted.
The capacitance line 10513 is made of the same material as the scanning line 10511.

The transistor 10514 has a function as a switch for conducting the video signal line 10512 and the pixel electrode 10515. One of the source region and the drain region of the transistor 10514 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10514. By doing so, the channel width of the transistor 10514 is increased, so that the switching ability can be improved. Transistor 10514
The gate electrodes of the above are arranged so as to surround the semiconductor layer.

The pixel electrode 10515 is electrically connected to one of the source electrode and the drain electrode of the transistor 10514. The pixel electrode 10515 is an electrode for applying the signal voltage transmitted by the video signal line 10512 to the liquid crystal element. The pixel electrode 10515 has a shape that matches the shape of the electrode notch portion 10517. Specifically, the electrode notch 10517
The shape is such that a portion in which the pixel electrode 10515 is cut out is formed in a portion without a pixel electrode 10515. By doing so, it is possible to form a plurality of regions in which the orientation of the liquid crystal molecules is different. The viewing angle can be improved. As the pixel electrode 10515, a transparent material or a reflective material can be used. Alternatively, a transparent material and a reflective material may be combined and used for the pixel electrode 10515.

FIG. 90A is an example of a top view of the pixels when the IPS system and the transistor are combined. By applying the pixel structure shown in FIG. 90 (A) to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle and a small gradation dependence of the response speed in principle.

The pixels shown in FIG. 90 (A) include a scanning line 10601, a video signal line 10602, and a common electrode 1.
It has 0603, a transistor 10604, and a pixel electrode 10605.

The scanning line 10601 has a function of transmitting a signal (scanning signal) to the pixels. Video signal line 10
The 602 has a function for transmitting a signal (video signal) to the pixels. The scanning line 106
Since 01 and the video signal line 10602 are arranged in a matrix, they are formed of different conductive layers. A semiconductor layer may be arranged at the intersection of the scanning line 10601 and the video signal line 10602. By doing so, the scanning line is 10601. Video signal line 106
It is possible to reduce the crossing capacity with 02. The video signal line 10602 is a pixel electrode 10.
It is formed according to the shape of 605.

The common electrode 10603 is arranged parallel to the pixel electrode 10605. Common electrode 1060
Reference numeral 3 denotes an electrode for generating an electric field in the lateral direction. The shape of the common electrode 10603 is a bent comb-teeth shape. A part of the common electrode 10603 extends along the video signal line 10602 so as to surround the video signal line 10602. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of the electrode that should hold the potential changes with the potential change of the video signal line 10602. By arranging the semiconductor layer between the common electrode 10603 and the video signal line 10602, the cross capacitance can be reduced. The portion of the common electrode 10603 arranged parallel to the scanning line 10601 is made of the same material as the scanning line 10601. Common electrode 106
The portion arranged in parallel with the pixel electrode 10605 of 03 is made of the same material as the pixel electrode 10605.

The transistor 10604 has a function as a switch for conducting the video signal line 10602 and the pixel electrode 10605. One of the source region and the drain region of the transistor 10604 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10604. By doing so, the channel width of the transistor 10604 is increased, so that the switching ability can be improved. Transistor 10604
The gate electrodes of the above are arranged so as to surround the semiconductor layer.

The pixel electrode 10605 is electrically connected to one of the source electrode and the drain electrode of the transistor 10604. The pixel electrode 10505 is an electrode for applying the signal voltage transmitted by the video signal line 10602 to the liquid crystal element. The shape of the pixel electrode 10605 is a bent comb-teeth shape. By doing so, a transverse electric field can be applied to the liquid crystal molecules.
It is possible to form a plurality of regions in which the orientation of the liquid crystal molecules is different. The viewing angle can be improved. As the pixel electrode 10605, a transparent material or a reflective material can be used. Alternatively, a transparent material and a reflective material may be combined and used for the pixel electrode 10605.

The comb-shaped portion of the common electrode 10603 and the pixel electrode 10605 may be formed of separate conductive layers. For example, the comb-shaped portion of the common electrode 10603 is the scanning line 1.
It may be formed of the same conductive layer as 0601 or the video signal line 10602. Similarly, the pixel electrode 10605 may be formed of the same conductive layer as the scanning line 10601 or the video signal line 10602.

FIG. 90B is a top view of the pixels when the FFS method and the transistor are combined. By applying the pixel structure shown in FIG. 90B to the liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle and a small gradation dependence of the response speed in principle.

The pixels shown in FIG. 90B are the scanning line 10611, the video signal line 10612, and the common electrode 1.
0613, a transistor 10614, and a pixel electrode 10615 may be provided.

The scanning line 10611 has a function of transmitting a signal (scanning signal) to the pixels. Video signal line 10
The 612 has a function for transmitting a signal (video signal) to the pixels. The scanning line 106
Since the 11 and the video signal line 10612 are arranged in a matrix, they are formed of different conductive layers. In addition, with scanning line 10611. A semiconductor layer may be arranged at the intersection with the video signal line 10612. By doing so, the scanning line 10611. Video signal line 10
It is possible to reduce the cross capacitance with 612. The video signal line 10612 is the pixel electrode 1.
It is formed according to the shape of 0615.

The common electrode 106013 is uniformly formed in the lower part of the pixel electrode 10615 and in the lower part between the pixel electrode 10615 and the pixel electrode 10615. As the common electrode 106013, a transparent material or a reflective material can be used. Alternatively, a transparent material and a reflective material may be combined and used for the common electrode 106013.

The transistor 10614 has a function as a switch for conducting the video signal line 10612 and the pixel electrode 10615. One of the source region and the drain region of the transistor 10604 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10614. By doing so, the channel width of the transistor 10614 is increased, so that the switching ability can be improved. Transistor 10614
The gate electrodes of the above are arranged so as to surround the semiconductor layer.

The pixel electrode 10615 is electrically connected to one of the source electrode and the drain electrode of the transistor 10614. The pixel electrode 10515 is an electrode for applying the signal voltage transmitted by the video signal line 10612 to the liquid crystal element. The shape of the pixel electrode 10615 is a bent comb-teeth shape. By doing so, a transverse electric field can be applied to the liquid crystal molecules.
The comb-shaped pixel electrode 10615 is arranged closer to the liquid crystal layer than the uniform portion of the common electrode 10613. It is possible to form a plurality of regions in which the orientation of the liquid crystal molecules is different.
The viewing angle can be improved. As the pixel electrode 10615, a transparent material or a reflective material can be used. Alternatively, a transparent material and a reflective material may be combined and used for the pixel electrode 10615.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 11)
In this embodiment, a process of manufacturing a liquid crystal cell (also referred to as a liquid crystal panel) will be described.

FIG. 91 (Fig. 91) shows a process of manufacturing a liquid crystal cell when the vacuum injection method is used as the liquid crystal filling method.
This will be described with reference to A) to (E) and FIGS. 92 (A) to 92 (C).

FIG. 92 (C) is a cross-sectional view showing a liquid crystal cell. First substrate 70101 and second substrate 70
107 is attached via the spacer 70106 and the sealing material 70105.
Then, the liquid crystal 70109 is arranged between the first substrate 70101 and the second substrate 70107. The alignment film 70102 is formed on the first substrate 70101, and the alignment film 701 is formed.
08 is formed on the second substrate 70107.

A plurality of pixels are formed in a matrix on the first substrate 70101. Then, each of the plurality of pixels may have a transistor. The first substrate 70101 is T.
It may be called an FT substrate, an array substrate, or a TFT array substrate. The first substrate 70101 includes a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, and a cloth substrate (natural fibers (silk, cotton, linen), synthetic). Fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. can be used. it can. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. However, the present invention is not limited to this, and various things can be used.

A common electrode, a color filter, a black matrix, and the like are formed on the second substrate 70107. The second substrate 70107 may be referred to as a counter substrate or a color filter substrate.

The alignment film 70102 has a function of orienting liquid crystal molecules in a certain direction. Alignment film 70102
As, a polyimide resin or the like can be used. However, the present invention is not limited to this, and various things can be used. The alignment film 70108 is the same as the alignment film 70102.

The sealing material 70105 has a first substrate 70101 and a second substrate 70101 so that the liquid crystal 70109 does not leak.
It has a function of adhering the substrate 70107 of the above. That is, it functions as a sealing material.

The spacer 70106 has a function of keeping the space (liquid crystal cell gap) between the first substrate 70101 and the second substrate 70107 constant. As the spacer 70106, a granular spacer or a columnar spacer can be used. Granular spacers include fibrous ones and spherical ones. The material of the granular spacer includes plastic, glass, and the like. Spherical spacers made of plastic are called plastic beads and are widely used. The fiber-like spacer made of glass is called glass fiber and is used by being mixed with a sealing material.

FIG. 91 (A) is a cross-sectional view showing a step of forming the alignment film 70102 on the first substrate 70101. The alignment film 70102 is formed on the first substrate 70101 by a roller coating method using a roller 70103. However, the alignment film 701 is placed on the first substrate 70101.
As a method for forming 02, in addition to the roller coating method, an offset printing method, a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, or the like can be used. it can. After that, temporary firing and main firing are applied to the alignment film 70102 in order.

FIG. 91 (B) is a cross-sectional view showing a step of applying a rubbing treatment to the alignment film 70102. The rubbing treatment is performed by rotating a rubbing roller 70104 in which a cloth is wrapped around a drum and rubbing the alignment film 70102. When this rubbing treatment is applied to the alignment film 70102, grooves for orienting the liquid crystal molecules in a certain direction are formed on the alignment film 70102. However, the present invention is not limited to this, and a groove may be formed in the alignment film by using an ion beam. afterwards,
A water cleaning treatment is applied to the first substrate 70101. By doing so, the first substrate 70101
Foreign matter or dirt on the surface of the surface can be removed.

Although not shown, the alignment film 70108 is formed on the second substrate 70107 and the rubbing treatment is applied to the alignment film 70108, similarly to the first substrate 70101. However, the present invention is not limited to this, and a groove may be formed in the alignment film by using an ion beam.

FIG. 91 (C) is a cross-sectional view showing a step of forming the sealing material 70105 on the alignment film 70102. The seal material 70105 is applied by a drawing device, screen printing, or the like to form a seal pattern. This seal pattern is formed along the outer circumference of the first substrate 70101, and a liquid crystal injection port is provided as a part of the seal pattern. And U for temporary fixing
The V resin is spot-coated outside the display area of the first substrate 70101 with a dispenser or the like.

The sealing material 70105 may be formed on the second substrate 70107.

FIG. 91 (D) is a cross-sectional view showing a step of spraying the spacer 70106 on the first substrate 70101. The spacer 70106 is ejected from a nozzle together with the compressed gas and sprayed (dry spraying). Alternatively, the spacer 70106 is mixed with a volatile liquid and sprayed so that the liquid is roasted (wet spraying). By such dry spraying or wet spraying, the spacer 70106 can be uniformly sprayed on the first substrate 70101.

Here, a case where a spherical granular spacer is used as the spacer 70106 has been described. However, the present invention is not limited to this, and columnar spacers can also be used. The columnar spacer may be formed on the first substrate 70101 or the second substrate 70107. Alternatively, a part of the spacer may be formed on the first substrate 70101 and the rest may be formed on the second substrate 70107.

The spacer may be mixed in the sealing material. By doing so, it is possible to easily keep the cell gap of the liquid crystal constant.

FIG. 91 (E) is a cross-sectional view showing a step of laminating the first substrate 70101 and the second substrate 70107. The first substrate 70101 and the second substrate 70107 are bonded together in the atmosphere. Then, both substrates are pressurized so that the gap between the first substrate 70101 and the second substrate 70107 is constant. After that, UV irradiation or heat treatment is performed on the sealing material 701.
By applying to 05, the sealing material 70105 is cured.

92 (A) and 92 (B) are top views showing a step of filling the liquid crystal. First substrate 70
A cell (also referred to as an empty cell) in which 101 and the second substrate 70107 are bonded to each other is placed in a vacuum chamber. Then, after the inside of the vacuum chamber is depressurized, the liquid crystal injection port 70113 of the empty cell is immersed in the liquid crystal. Then, when the inside of the vacuum chamber is opened to the atmosphere, the liquid crystal 70109 is filled in the empty cell by the differential pressure and the capillary phenomenon.

When the empty cell is filled with the required amount of liquid crystal 70109, the liquid crystal injection port is sealed by the resin 70110. Then, the liquid crystal excessively attached to the empty cell is washed. After that, the liquid crystal 70109 is subjected to a reorientation treatment by an annealing treatment. In this way, the liquid crystal cell is completed.

Next, the manufacturing process of the liquid crystal cell when the dropping method is used as the filling method of the liquid crystal is shown in FIG. 93.
This will be described with reference to (A) to (D) and FIGS. 94 (A) to 94 (C).

FIG. 94 (C) is a cross-sectional view showing a liquid crystal cell. First substrate 70301 and second substrate 70
The 307 is attached via the spacer 70306 and the sealing material 70305.
Then, the liquid crystal 70309 is arranged between the first substrate 70301 and the second substrate 70307. The alignment film 70302 is formed on the first substrate 70301, and the alignment film 703 is formed.
08 is formed on the second substrate 70307.

A plurality of pixels are formed in a matrix on the first substrate 70301. Then, each of the plurality of pixels may have a transistor. The first substrate 70301 is T.
It may be called an FT substrate, an array substrate, or a TFT array substrate. The first substrate 70301 includes a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, and a cloth substrate (natural fibers (silk, cotton, linen), synthetic). Fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. can be used. it can. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as a substrate. However, the present invention is not limited to this, and various things can be used.

A common electrode, a color filter, a black matrix, and the like are formed on the second substrate 70307. The second substrate 70307 may be referred to as a counter substrate or a color filter substrate.

The alignment film 70302 has a function of orienting liquid crystal molecules in a certain direction. Alignment film 70302
As, a polyimide resin or the like can be used. However, the present invention is not limited to this, and various things can be used. The alignment film 70308 is the same as the alignment film 70302.

The sealing material 70305 has a first substrate 70301 and a second substrate 70301 so that the liquid crystal 70309 does not leak.
It has a function of adhering the substrate 70307 of the above. That is, it functions as a sealing material.

The spacer 70306 has a function of keeping the space (liquid crystal cell gap) between the first substrate 70301 and the second substrate 70307 constant. As the spacer 70306, a granular spacer or a columnar spacer can be used. Granular spacers include fibrous ones and spherical ones. The material of the granular spacer includes plastic, glass, and the like. Spherical spacers made of plastic are called plastic beads and are widely used. The fiber-like spacer made of glass is called glass fiber and is used by being mixed with a sealing material.

FIG. 93 (A) is a cross-sectional view showing a step of forming the alignment film 70302 on the first substrate 70301. The alignment film 70302 is formed on the first substrate 70301 by a roller coating method using the roller 70303. However, the alignment film 703 is placed on the first substrate 70301.
As a method for forming 02, in addition to the roller coating method, an offset printing method, a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, or the like can also be used. it can. After that, temporary firing and main firing are applied to the alignment film 70302 in order.

FIG. 93 (B) is a cross-sectional view showing a step of applying a rubbing treatment to the alignment film 70302. The rubbing process is performed by rotating a rubbing roller 70304 in which a cloth is wrapped around a drum and rubbing the alignment film 70302. When this rubbing treatment is applied to the alignment film 70302, a groove for orienting the liquid crystal molecules in a certain direction is formed on the alignment film 70302. However, the present invention is not limited to this, and a groove may be formed in the alignment film by using an ion beam. afterwards,
A water cleaning treatment is applied to the first substrate 70301. By doing so, the first substrate 70301
Foreign matter or dirt on the surface of the surface can be removed.

Although not shown, the alignment film 70308 is formed on the second substrate 70307 and the rubbing treatment is applied to the alignment film 70308, similarly to the first substrate 70301. However, the present invention is not limited to this, and a groove may be formed in the alignment film by using an ion beam.

FIG. 93 (C) is a cross-sectional view showing a step of forming the sealing material 70305 on the alignment film 70302. The seal material 70305 is applied by a drawing device, screen printing, or the like to form a seal pattern. This seal pattern is formed along the outer circumference of the first substrate 70301. Here, the sealing material 70305 is a radical type UV resin or a cationic type U.
Use V resin. Then, the conductive resin is spot-coated with the dispenser.

The sealing material 70305 may be formed on the second substrate 70307.

FIG. 93 (D) is a cross-sectional view showing a step of spraying the spacer 70306 on the first substrate 70301. The spacer 70306 is ejected from a nozzle together with the compressed gas and sprayed (dry spraying). Alternatively, the spacer 70306 is mixed with a volatile liquid and sprayed so that the liquid is roasted (wet spraying). By such dry spraying or wet spraying, the spacer 70306 can be uniformly sprayed on the first substrate 70301.

Here, a case where a spherical granular spacer is used as the spacer 70306 has been described. However, the present invention is not limited to this, and columnar spacers can also be used. The columnar spacer may be formed on the first substrate 70301 or the second substrate 70307. Alternatively, a part of the spacer may be formed on the first substrate 70301 and the rest may be formed on the second substrate 70307.

The spacer may be mixed in the sealing material. By doing so, it is possible to easily keep the cell gap of the liquid crystal constant.

FIG. 94 (A) is a cross-sectional view showing a step of dropping the liquid crystal 70309. After the defoaming treatment is applied to the liquid crystal 70309, the liquid crystal 70309 is dropped inside the sealing material 70305.

Note that FIG. 94B is a top view of the liquid crystal 70309 after being dropped. Sealing material 7030
Since 5 is formed along the outer circumference of the first substrate 70301, the liquid crystal 70309 does not leak.

FIG. 94 (C) is a cross-sectional view showing a step of laminating the first substrate 70301 and the second substrate 70307. The first substrate 70301 and the second substrate 70307 are bonded together in a vacuum chamber. Then, both substrates are pressurized so that the gap between the first substrate 70301 and the second substrate 70307 is constant. After that, the sealing material 70305 is cured by applying ultraviolet irradiation to the sealing material 70305. Here, it is desirable to cover the display portion with a mask and irradiate the sealing material 70305 with ultraviolet rays. This is because it is possible to prevent the liquid crystal 70309 from being deteriorated by ultraviolet rays. After that, by annealing treatment
The reorientation treatment is applied to the liquid crystal 70309. In this way, the liquid crystal cell is completed.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 12)
In the present embodiment, the pixel configuration of the display device and the operation of the pixels will be described.

95 (A) and 95 (B) are timing charts showing an example of digital time gradation drive. The timing chart of FIG. 95 (A) shows a driving method when the signal writing period (address period) and the light emitting period (sustaining period) to the pixels are separated.

The period for completely displaying the image for one display area is called one frame period. One frame period has a plurality of subframe periods, and one subframe period has an address period and a sustain period. The address periods Ta1 to Ta4 indicate the time required to write the signal to the pixels for all lines, and the periods Tb1 to Tb4 indicate the time required to write the signal to the pixels (or one pixel) for one line. The sustain periods Ts1 to Ts4 indicate the time for which the lighting or non-lighting state is maintained according to the video signal written to the pixel, and the ratio of the lengths is Ts.
1: Ts2: Ts3: Ts4 = 2 ³ : 2 ² : 2 ¹ : 2 ⁰ = 8: 4: 2: 1. The gradation is expressed by which sustain period the light is emitted.

The operation will be described. First, in the address period Ta1, pixel selection signals are input to the scanning lines in order from the first line, and pixels are selected. Then, when the pixel is selected, a video signal is input from the signal line to the pixel. Then, when a video signal is written to the pixel, the pixel holds the signal until the signal is input again. The written video signal controls lighting and non-lighting of each pixel during the sustain period Ts1. Similarly, a video signal is input to the pixels in the address periods Ta2, Ta3, and Ta4, and the lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signal. Then, in each subframe period, the light is not turned on during the address period, and after the address period ends, the sustain period starts and the pixel in which the signal for turning on is written is turned on.

Here, with reference to FIG. 95 (B), the description will be made focusing on the pixel row of the i-th row. First, in the address period Ta1, pixel selection signals are input to the scanning lines in order from the first line, and the address period T
In the period Tb1 (i) of a1, the pixel in the i-th row is selected. Then, when the pixel on the i-th row is selected, the video signal is input from the signal line to the pixel on the i-th row. And
When a video signal is written to the pixel on the i-th row, the pixel on the i-th row holds the signal until the signal is input again. The written video signal controls the lighting and non-lighting of the pixel in the i-th row during the sustain period Ts1. Similarly, the address periods Ta2, Ta3, T
In a4, a video signal is input to the pixel in the i-th row, and the video signal controls lighting and non-lighting of the pixel in the i-th row in the sustain periods Ts2, Ts3, and Ts4. Then, in each subframe period, the light is not turned on during the address period, and after the address period ends, the sustain period starts and the pixel in which the signal for turning on is written is turned on.

Although the case of expressing the 4-bit gradation has been described here, the number of bits and the number of gradations are not limited to this. The order of lighting does not have to be Ts1, Ts2, Ts3, and Ts4, and may be random or may be divided into a plurality of lights to emit light. In addition, Ts1, Ts2
, Ts3 and Ts4 need not be set to a power of 2, and may be set to the same length of lighting time, or may be slightly shifted from the power of 2.

Subsequently, a driving method when the signal writing period (address period) and the light emitting period (sustaining period) to the pixels are not separated will be described. That is, the pixel in the row where the video signal writing operation is completed holds the signal until the next writing (or erasing) of the signal to the pixel. The period from the writing operation to the next writing of a signal to this pixel is called the data retention time. Then, during this data holding time, the pixels are turned on or off according to the video signal written to the pixels. The same operation is performed until the last line, and the address period ends. Then, the signal writing operation for the next subframe period is started in order from the line at which the data holding time ends.

In this way, in the case of the driving method in which the pixels are turned on or off according to the video signal written to the pixels immediately after the signal writing operation is completed and the data holding time is reached, the data holding time is tried to be shorter than the address period. However, since signals cannot be input to two lines at the same time, the address periods must not overlap, so that the data retention time cannot be shortened. Therefore, as a result, it becomes difficult to perform high gradation display.

Therefore, by providing the erasure period, the data retention time shorter than the address period is set. A driving method in the case of setting an erasure period and setting a data retention time shorter than the address period will be described with reference to FIG. 96 (A).

First, in the address period Ta1, pixel scanning signals are input to the scanning lines in order from the first line.
Pixels are selected. Then, when the pixel is selected, a video signal is input from the signal line to the pixel. Then, when a video signal is written to the pixel, the pixel holds the signal until the signal is input again. Sustain period Ts1 by this written video signal
The lighting and non-lighting of each pixel in is controlled. In the line where the writing operation of the video signal is completed, the pixels are turned on or off according to the immediately written video signal. The same operation is performed up to the last line, and the address period Ta1 ends. Then, the signal writing operation for the next subframe period is started in order from the line at which the data holding time ends. Similarly, a video signal is input to the pixels in the address periods Ta2, Ta3, and Ta4, and the lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signal. Then, the sustain period TS4 is set at the end thereof by the start of the erasing operation. This is because when the signal written to the pixel is erased at the erase time Te of each line, it is forced regardless of the video signal written to the pixel during the address period until the signal is written to the next pixel. This is because it is not lit. That is, the data holding time ends from the pixel in the row where the erasing time Te starts.

Here, with reference to FIG. 96B, the description will be made focusing on the pixel row of the i-th row. In the pixel row of the i-th row, in the address period Ta1, the pixel scanning signal is input to the scanning line in order from the first row, and the pixels are selected. Then, when the pixel in the i-th row is selected in the period Tb1 (i), the video signal is input to the pixel in the i-th row. Then, when the video signal is written to the pixel on the i-th row, the pixel on the i-th row holds the signal until the signal is input again. The written video signal controls the lighting and non-lighting of the pixel in the i-th row during the sustain period Ts1 (i). That is, when the video signal writing operation is completed on the i-th line,
Immediately according to the written video signal, the pixel on the i-th line is turned on or off. Similarly, a video signal is input to the pixels in the i-th row in the address periods Ta2, Ta3, and Ta4, and the video signals control the lighting and non-lighting of the pixels in the i-th row in the sustain periods Ts2, Ts3, and Ts4. Then, the sustain period Ts4 (i) is set by the start of the erasing operation at the end thereof. This is because the lights are forcibly turned off regardless of the video signal written in the pixels of the i-th row at the erasure time Ts (i) of the i-th row. That is, when the erasing time Te (i) starts, the data holding time of the pixel in the i-th row ends.

Therefore, it is possible to provide a display device having a higher gradation and a higher duty ratio (ratio of the lighting period in one frame period) shorter than the address period without separating the address period and the sustain period. Since the instantaneous brightness can be lowered, the reliability of the display element can be improved.

Although the case of expressing the 4-bit gradation has been described here, the number of bits and the number of gradations are not limited to this. Further, the order of lighting does not have to be Ts1, Ts2, Ts3, and Ts4, and may be random or may be divided into a plurality of lights to emit light. Also, Ts1, Ts2,
The lighting times of Ts3 and Ts4 do not have to be a power of 2, and may be the same length of lighting time, or may be slightly shifted from the power of 2.

The configuration of pixels to which digital time gradation drive can be applied and the operation of pixels will be described.

FIG. 97 is a diagram showing an example of a pixel configuration to which digital time gradation drive can be applied.

Pixel 80300 is a switching transistor 80301 and a driving transistor 803.
02, it has a light emitting element 80304 and a capacitance element 80303. In the switching transistor 80301, the gate is connected to the scanning line 80306, the first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80305, and the second electrode (the other of the source electrode and the drain electrode) is the driving transistor. It is connected to the gate of 80302. In the drive transistor 80302, the gate is connected to the power supply line 80307 via the capacitance element 80303, the first electrode is connected to the power supply line 80307, and the second electrode is the first electrode of the light emitting element 80304 (
It is connected to the pixel electrode). The second electrode of the light emitting element 80304 corresponds to the common electrode 80308.

A low power supply potential is set for the second electrode (common electrode 80308) of the light emitting element 80304. The low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80307, and the low power supply potential is set to, for example, GND or 0V. Is also good. The potential difference between the high power supply potential and the low power supply potential is measured by the light emitting element 8030.
In order to apply a current to the light emitting element 80304 to cause the light emitting element 80304 to emit light, the potential difference between the high power potential and the low power potential is equal to or higher than the forward threshold voltage of the light emitting element 80304. Set the potential.

The capacitive element 80303 can be omitted by substituting the gate capacitance of the driving transistor 80302. Regarding the gate capacitance of the drive transistor 80302, the capacitance may be formed in a region where the gate electrode overlaps with the source region, drain region, LDD region, or the like, or the channel region and the gate electrode may be formed. A capacitance may be formed between the and.

When a pixel is selected on the scanning line 80306, that is, the switching transistor 80
A video signal is input to the pixels from the signal line 80305 when 301 is on.
Then, a charge corresponding to a voltage corresponding to the video signal is accumulated in the capacitance element 80303, and the capacitance element 80303 holds the voltage. This voltage is the voltage between the gate of the driving transistor 80302 and the first electrode, and corresponds to the gate-source voltage Vgs of the driving transistor 80302.

In general, the operating region of a transistor can be divided into a linear region and a saturated region. The boundary is when (Vgs-Vth) = Vds, where Vds is the drain-source voltage, Vgs is the gate-source voltage, and Vth is the threshold voltage. (Vgs-Vth)> Vds
In the case of, it is a linear region, and the current value is determined by the magnitudes of Vds and Vgs. on the other hand,(
When Vgs-Vth) <Vds, the saturation region is reached, and ideally, even if Vds changes,
The current value is almost unchanged. That is, the current value is determined only by the magnitude of Vgs.

Here, in the case of the voltage input voltage drive system, a video signal is input to the gate of the drive transistor 80302 so that the drive transistor 80302 is in two states of being sufficiently turned on and off. That is, the driving transistor 80302 is operated in the linear region.

Therefore, when the drive transistor 80302 is a video signal to be turned on, ideally, the power supply potential VDD set in the power supply line 80307 is set as it is in the first electrode of the light emitting element 80304.

That is, ideally, the voltage applied to the light emitting element 80304 is made constant, and the light emitting element 80304 is used.
The brightness obtained from is constant. Then, a plurality of subframe periods are provided within one frame period, a video signal is written to the pixels for each subframe period, lighting or non-lighting of the pixels is controlled for each subframe period, and the lighting is performed. By the total subframe period
Express gradation.

By inputting a video signal such that the driving transistor 80302 operates in the saturation region, a current can be passed through the light emitting element 80304. If the light emitting element 80304 is an element that determines the brightness according to the current, it is possible to suppress a decrease in brightness due to deterioration of the light emitting element 80304. Furthermore, by making the video signal analog, the light emitting element 8030
A current corresponding to the video signal can be passed through 4. In this case, analog gradation drive can be performed.

FIG. 98 is a diagram showing an example of a pixel configuration to which digital time gradation drive can be applied.

Pixel 80400 is a switching transistor 80401 and a driving transistor 804.
02, it has a capacitance element 80403, a light emitting element 80404, and a rectifying element 80409.
The gate of the switching transistor 80401 is connected to the second scanning line 80406, and the switching transistor 80401 is connected to the second scanning line 80406.
The first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80405, and the second electrode (the other of the source electrode and the drain electrode) is connected to the gate of the driving transistor 80402. In the drive transistor 80402, the gate is connected to the power supply line 80407 via the capacitive element 80403, and the gate is connected to the second scanning line 804 via the rectifying element 80309.
10 is connected, the first electrode is connected to the power supply line 80407, and the second electrode is the light emitting element 8040.
It is connected to the first electrode (pixel electrode) of No. 4. The second electrode of the light emitting element 80404 corresponds to the common electrode 80408.

A low power supply potential is set for the second electrode (common electrode 80408) of the light emitting element 80404. The low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80407, and the low power supply potential is set to, for example, GND or 0V. Is also good. The potential difference between the high power supply potential and the low power supply potential is measured by the light emitting element 8040.
In order to apply a current to the light emitting element 80404 to cause the light emitting element 80404 to emit light, the potential difference between the high power potential and the low power potential is equal to or higher than the forward threshold voltage of the light emitting element 80404. Set the potential.

The capacitive element 80403 can be omitted by substituting the gate capacitance of the driving transistor 80402. Regarding the gate capacitance of the drive transistor 80402, the capacitance may be formed in a region where the gate electrode overlaps with the source region, drain region, LDD region, or the like, or the channel region and the gate electrode may be formed. A capacitance may be formed between the and.

As the rectifying element 80409, a diode-connected transistor can be used. In addition to the diode-connected transistor, a PN-junction diode, a PIN-junction diode, a Schottky-type diode, a diode formed of carbon nanotubes, or the like may be used. The polarity of the diode-connected transistor may be an N-channel type or a P-channel type.

Pixel 80400 is a pixel shown in FIG. 97 with a rectifying element 80409 and a second scanning line 8041.
0 is added. Therefore, the switching transistor 80401 shown in FIG. 98
, Drive transistor 80402, capacitive element 80403, light emitting element 80404, signal line 8
The 0405, the first scanning line 80406, the power supply line 80407, and the common electrode 80408 are the switching transistor 80301 and the driving transistor 803 shown in FIG. 97, respectively.
02, capacitive element 80303, light emitting element 80304, signal line 80305, scanning line 80306
, Corresponds to the power supply line 80307 and the common electrode 80308. Therefore, since the writing operation and the light emitting operation of FIG. 98 are the same as the writing operation and the light emitting operation described with reference to FIG. 97, the description thereof will be omitted.

The erasing operation will be described. At the time of the erasing operation, an H level signal is input to the second scanning line 80410. Then, a current flows through the rectifying element 80409, and the gate potential of the driving transistor 80402 held by the capacitive element 80403 can be set to a certain potential. That is, the potential of the gate of the drive transistor 80402 can be set to a certain potential, and the drive transistor 80402 can be forcibly turned off regardless of the video signal written to the pixel.

The L-level signal input to the second scanning line 80410 has a potential such that no current flows through the rectifying element 80409 when a video signal that is not lit is written in the pixels.
The H-level signal input to the second scanning line 80410 is set to a potential at which the potential at which the driving transistor 80402 is turned off can be set at the gate regardless of the video signal written to the pixel.

As the rectifying element 80409, a diode-connected transistor can be used. Furthermore, in addition to the diode-connected transistor, the PN junction diode, P
An IN-bonded diode, a Schottky type diode, a diode formed of carbon nanotubes, or the like may be used. The polarity of the diode-connected transistor may be an N-channel type or a P-channel type.

FIG. 99 is a diagram showing an example of a pixel configuration to which digital time gradation drive can be applied.

Pixel 80500 is a switching transistor 80501 and a driving transistor 805.
02, it has a capacitance element 80503, a light emitting element 80504, and an erasing transistor 80509. In the switching transistor 80501, the gate is connected to the second scanning line 80506, the first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80505, and the second electrode (the other of the source electrode and the drain electrode) is connected. It is connected to the gate of the drive transistor 80502. In the drive transistor 80502, the gate is a capacitive element 8050.
It is connected to the power supply line 80507 via 3, and the gate is the first of the erasing transistor 80509.
It is connected to the electrode, the first electrode is connected to the power supply line 80507, and the second electrode is the light emitting element 8050.
It is connected to the first electrode (pixel electrode) of No. 4. The erasing transistor has a gate connected to a second scanning line 80510 and a second electrode connected to a power supply line 80507. Light emitting element 8
The second electrode of 0504 corresponds to the common electrode 80508.

A low power supply potential is set in the second electrode (common electrode 80508) of the light emitting element 80504. The low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80507, and the low power supply potential is set to, for example, GND or 0V. Is also good. The potential difference between the high power supply potential and the low power supply potential is measured by the light emitting element 8050.
In order to apply a current to the light emitting element 80504 to cause the light emitting element 80504 to emit light, the potential difference between the high power potential and the low power potential is equal to or greater than the forward threshold voltage of the light emitting element 80504. Set the potential.

The capacitive element 80503 can be omitted by substituting the gate capacitance of the driving transistor 80502. Regarding the gate capacitance of the drive transistor 80502, the capacitance may be formed in a region where the gate electrode overlaps with the source region, drain region, LDD region, or the like, or the channel region and the gate electrode may be formed. A capacitance may be formed between the and.

The pixel 80500 is obtained by adding an erasing transistor 80509 and a second scanning line 80510 to the pixel shown in FIG. 97. Therefore, the switching transistor 80501, the driving transistor 80502, the capacitance element 80503, and the light emitting element 80504 shown in FIG. 99
, Signal line 80505, first scanning line 80506, power supply line 80507 and common electrode 8050
8 corresponds to the switching transistor 80301, the driving transistor 80302, the capacitance element 80303, the light emitting element 80304, the signal line 80305, the scanning line 80306, the power supply line 80307, and the common electrode 80308, respectively, as shown in FIG. 97. Therefore, FIG. 99
Since the writing operation and the light emitting operation of the above are the same as the writing operation and the light emitting operation described with reference to FIG. 97, the description thereof will be omitted.

The erasing operation will be described. At the time of the erasing operation, an H level signal is input to the second scanning line 80510. Then, the erasing transistor 80509 is turned on, and the gate of the driving transistor and the first electrode can be brought to the same potential. That is, the driving transistor 80502
Vgs can be set to 0V. In this way, the driving transistor 80502 can be forcibly turned off.

The configuration and operation of pixels called the threshold voltage correction type will be described. The threshold voltage correction type pixel can be applied to digital time gradation drive and analog gradation drive.

FIG. 100 is a diagram showing an example of a pixel configuration called a threshold voltage correction type.

The pixels shown in FIG. 100 are a driving transistor 80600, a first switch 80601, a second switch 80602, a third switch 80603, a first capacitive element 80604, and a second.
It has a capacitance element 80605 and a light emitting element 80620. Drive transistor 806
The gate of 00 is connected to the signal line 80611 via the first capacitive element 80604 and the first switch 80601 in this order. The gate of the drive transistor 80600 is connected to the power supply line 80612 via the second capacitive element 80605. Drive transistor 8
The first electrode of 0600 is connected to the power supply line 80612. Drive transistor 806
The second electrode of 00 is connected to the first electrode of the light emitting element 80620 via the third switch 80603. The second electrode of the drive transistor 80600 is the second switch 806.
It is connected to the gate of the driving transistor 80600 via 02. Light emitting element 806
The second electrode of 20 corresponds to the common electrode 80621.

A low power supply potential is set for the second electrode of the light emitting element 80620. The low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80612, and the low power supply potential is set to, for example, GND or 0V. Is also good.
The potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80620 to apply the light emitting element 80.
In order to make the light emitting element 80620 emit light by passing a current through the 620, each potential is set so that the potential difference between the high power supply potential and the low power supply potential is equal to or larger than the forward threshold voltage of the light emitting element 80620. The second capacitive element 80605 can be omitted by substituting the gate capacitance of the driving transistor 80600. Regarding the gate capacitance of the drive transistor 80600, the capacitance may be formed in a region where the gate electrode overlaps with the source region, drain region, LDD region, or the like, or the channel region and the gate electrode may be formed. A capacitance may be formed between the and. The first switch 80601, the second switch 80602, and the third switch 80603 are turned on and off by the first scanning line 80613, the second scanning line 80614, and the third scanning line 80614, respectively. ..

Regarding the pixel driving method shown in FIG. 100, the operation period is set to the initialization period, the data writing period, and the like.
The threshold acquisition period and the light emission period will be described separately.

During the initialization period, the second switch 80602 and the third switch 80603 are turned on.
Then, the potential of the gate of the driving transistor 80600 becomes at least lower than the potential of the power supply line 80612. At this time, the first switch 80601 may be on or off. The initialization period is not always necessary.

During the threshold acquisition period, pixels are selected by the first scan line 80613. That is, the first switch 80601 is turned on, and a certain constant voltage is input from the signal line 80611. At this time, the second switch 80602 is on and the third switch 80603 is off. Therefore, the drive transistor 80600 is connected by a diode, and the second electrode and the gate of the drive transistor 80600 are in a floating state (floating state). And
The potential of the gate of the drive transistor 80600 is a value obtained by subtracting the threshold voltage of the drive transistor 80600 from the potential of the power supply line 80612. Therefore, the first capacitive element 806
The threshold voltage of the driving transistor 80600 is held in 04. Second capacitive element 8
In 0605, the potential difference between the potential of the gate of the driving transistor 80600 and the constant voltage input from the signal line 80611 is held.

During the data writing period, a video signal (voltage) is input from the signal line 80611. At this time, the first switch 80601 remains on, the second switch 80602 is off, and the third switch 80603 remains off. And the driving transistor 806
Since the gate of 00 is in a floating state (floating state), the potential of the gate of the driving transistor 80600 is a constant voltage input to the signal line 80611 during the threshold acquisition period and the signal line 80611 input during the data writing period. It changes according to the potential difference from the video signal to be output. For example, the capacitance value of the first capacitance element 80604 << the second capacitance element 8
If the capacitance value is 0605, the drive transistor 80600 during the data writing period
The potential of the gate is the threshold voltage of the driving transistor 80600 from the potential of the signal line 80611 during the threshold acquisition period, the potential of the signal line 80611 and the potential difference (change amount) during the data writing period, and the potential of the power supply line 80612. It is approximately equal to the sum of the value obtained by subtracting.
That is, the potential of the gate of the driving transistor 80600 is the driving transistor 8060.
The potential is corrected for the threshold voltage of 0.

During the light emission period, the potential difference between the gate of the driving transistor 80600 and the power supply line 80612 (
A current corresponding to Vgs) flows through the light emitting element 80620. At this time, the first switch 806
01 is off, the second switch 80602 remains off, and the third switch 8060
3 turns on. The current flowing through the light emitting element 80620 is the driving transistor 8060.
It is constant regardless of the threshold voltage of 0.

The pixel configuration shown in FIG. 100 is not limited to this. For example, a switch, a resistance element, a capacitance element, a transistor, a logic circuit, or the like may be newly added to the pixel shown in FIG. 100. For example, the second switch 80602 is composed of a P-channel type transistor or an N-channel type transistor, the third switch 80603 is composed of a transistor having a polarity different from that of the second switch 80602, and the second switch 80602 and The third switch 80603 may be controlled by the same scanning line.

The configuration and operation of pixels called a current input type will be described. Current input positive pixels can be applied to digital gradation drive and analog gradation drive.

FIG. 101 is a diagram showing an example of a pixel configuration called a current input type.

The pixel shown in FIG. 101 includes a driving transistor 80700, a first switch 80701, a second switch 80702, a third switch 80703, a capacitive element 80704, and a light emitting element 80730. The gate of the drive transistor 80700 is the second switch 8.
The 0702 and the first switch 80701 are connected to the signal line 80711 in order. The gate of the drive transistor 80700 is connected to the power supply line 807 via the capacitive element 80704.
It is connected to 12. The first electrode of the drive transistor 80700 is the power supply line 80712.
It is connected to the. The second electrode of the drive transistor 80700 is the first switch 807.
It is connected to the power supply line 80712 via 01. The second drive transistor 80700
The electrode is connected to the first electrode of the light emitting element 80730 via the third switch 80703. The second electrode of the light emitting element 80730 corresponds to the common electrode 80731.

A low power supply potential is set for the second electrode of the light emitting element 80730. The low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80712, and the low power supply potential is set to, for example, GND or 0V. Is also good.
The potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80730 to apply the light emitting element 80.
In order to cause the light emitting element 80730 to emit light by passing a current through the 730, each potential is set so that the potential difference between the high power supply potential and the low power supply potential is equal to or greater than the forward threshold voltage of the light emitting element 80730. The capacitive element 80704 can be omitted by substituting the gate capacitance of the driving transistor 80700. Regarding the gate capacitance of the drive transistor 80700, the capacitance may be formed in a region where the gate electrode overlaps with the source region, drain region, LDD region, or the like, or the channel region and the gate electrode may be formed. A capacitance may be formed between the and. The first switch 80701, the second switch 80702, and the third switch 80703 are turned on and off by the first scanning line 80713, the second scanning line 80714, and the third scanning line 80734, respectively. ..

The pixel driving method shown in FIG. 101 will be described by dividing the operation period into a data writing period and a light emitting period.

During the data writing period, pixels are selected by the first scan line 80713. In other words
The first switch 80701 is turned on, and a current is input as a video signal from the signal line 80711. At this time, the second switch 80702 is turned on and the third switch 80703 is turned off. Therefore, the potential of the gate of the driving transistor 80700 becomes a potential corresponding to the video signal. That is, the capacitive element 80704 holds a voltage between the gate electrode and the source electrode of the drive transistor 80700 so that the drive transistor 80700 passes the same current as the video signal.

Next, during the light emitting period, the first switch 80701 and the second switch 80702 are turned off, and the third switch 80703 is turned on. Therefore, a current having the same value as the video signal flows through the light emitting element 80730.

The pixel configuration shown in FIG. 101 is not limited to this. For example, a switch, a resistance element, a capacitance element, a transistor, a logic circuit, or the like may be newly added to the pixel shown in FIG. For example, the first switch 80701 is composed of a P-channel transistor or an N-channel transistor, the second switch 80702 is composed of a transistor having the same polarity as the first switch 80701, and the first switch 80701 and the second switch 80701 are configured. Switch 80702 may be controlled by the same scanning line. The second switch 80702 may be arranged between the gate of the driving transistor 80700 and the signal line 80711.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 13)
In this embodiment, the pixel structure of the display device will be described. In particular, the pixel structure of the display device using the organic EL element will be described.

FIG. 102 (A) is an example of a top view (layout view) of a pixel having two transistors in one pixel. FIG. 102 (B) is an example of a cross-sectional view of the portion XX'shown in FIG. 102 (A).

FIG. 102 (A) shows a first transistor 60105, a first wiring 60106, a second wiring 60107, a second transistor 60108, a third wiring 60111, and a counter electrode 6011.
2. Capacitor 60113, pixel electrode 60115, partition wall 60116, organic conductor film 601
17, the organic thin film 60118 and the substrate 60119 are shown. The first transistor 60105 is a switching transistor, the first wiring 60106 is a gate signal line, the second wiring 60107 is a source signal line, and the second transistor 60108 is a driving transistor. It is preferable that 60111 is used as a current supply line, respectively.

The gate electrode of the first transistor 60105 is electrically connected to the first wiring 60106, and one of the source electrode and the drain electrode of the first transistor 60105 is electrically connected to the second wiring 60107. The other of the source electrode and the drain electrode of the transistor 60105 of 1 is the gate electrode and the capacitor 60113 of the second transistor 60108.
It is electrically connected to one of the electrodes. The gate electrode of the first transistor 60105 is composed of a plurality of gate electrodes. By doing so, the leakage current in the off state of the first transistor 60105 can be reduced.

One of the source electrode and the drain electrode of the second transistor 60108 is a third wiring 60.
It is electrically connected to 111, and the other of the source and drain electrodes of the second transistor 60108 is electrically connected to the pixel electrode 60115. By doing so, the current flowing through the pixel electrode 60115 can be controlled by the second transistor 60108.

An organic conductor film 60117 is provided on the pixel electrode 60115, and an organic thin film 601 is further provided.
18 (organic compound layer) is provided. On the organic thin film 60118 (organic compound layer),
The counter electrode 60112 is provided. The counter electrode 60112 may be formed in a solid shape so that it is commonly connected to all the pixels, or may be patterned by using a shadow mask or the like.

The light emitted from the organic thin film 60118 (organic compound layer) is emitted through either the pixel electrode 60115 or the counter electrode 60112.

In FIG. 102 (B), the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is referred to as bottom surface radiation, and the case where light is emitted to the counter electrode side is referred to as top surface radiation.

In the case of bottom radiation, the pixel electrode 60115 is preferably formed of a transparent conductive film.
On the contrary, in the case of top radiation, the counter electrode 60112 is preferably formed of a transparent conductive film.

In the color display light emitting device, EL elements having each emission color of R, G, and B may be painted separately, or a single color EL element may be painted in a solid form, and R, G, and R, G, may be painted by a color filter.
The light emission of B may be obtained.

The configuration shown in FIG. 102 is merely an example, and various configurations can be taken in addition to the configuration shown in FIG. 102 regarding the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. Further, as the light emitting layer, in addition to the element composed of the organic thin film shown in the figure, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used.

FIG. 103 (A) is an example of a top view (layout view) of a pixel having three transistors in one pixel. FIG. 103 (B) is an example of a cross-sectional view of the portion XX'shown in FIG. 103 (A).

FIG. 103 (A) shows the substrate 60200, the first wiring 60201, the second wiring 60202, the third wiring 60203, the fourth wiring 60204, the first transistor 60205, the second transistor 60206, and the third transistor. 60207, pixel electrode 60208, partition wall 60
211, an organic conductor film 60212, an organic thin film 60213, and a counter electrode 60214 are shown.
The first wiring 60201 is used as a source signal line, the second wiring 60202 is used as a writing gate signal line, and the third wiring 60203 is used as an erasing gate signal line.
It is preferable that 04 is used as a current supply line, the first transistor 60205 is used as a switching transistor, the second transistor 60206 is used as an erasing transistor, and the third transistor 60207 is used as a driving transistor.

The gate electrode of the first transistor 60205 is electrically connected to the second wiring 60202, and one of the source electrode and the drain electrode of the first transistor 60205 is electrically connected to the first wiring 60201. The other of the source electrode and the drain electrode of the transistor 60205 of 1 is electrically connected to the gate electrode of the third transistor 60207. The gate electrode of the first transistor 60205 is composed of a plurality of gate electrodes. By doing so, the leakage current in the off state of the first transistor 60205 can be reduced.

The gate electrode of the second transistor 60206 is electrically connected to the third wiring 60203, and one of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the fourth wiring 60204. The other of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the gate electrode of the third transistor 60207. The gate electrode of the second transistor 60206 is composed of a plurality of gate electrodes. By doing so, the leakage current in the off state of the second transistor 60206 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60207 is the fourth wiring 60.
It is electrically connected to 204, and the other of the source and drain electrodes of the third transistor 60207 is electrically connected to the pixel electrode 60208. By doing so, the current flowing through the pixel electrode 60208 can be controlled by the third transistor 60207.

An organic conductor film 60212 is provided on the pixel electrode 60208, and an organic thin film 602 is further provided.
13 (organic compound layer) is provided. On the organic thin film 60213 (organic compound layer),
A counter electrode 60214 is provided. The counter electrode 60214 may be formed in a solid shape so that it is commonly connected to all the pixels, or may be patterned by using a shadow mask or the like.

The light emitted from the organic thin film 60213 (organic compound layer) is emitted through either the pixel electrode 60208 or the counter electrode 60214.

In FIG. 103 (B), the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is referred to as bottom surface radiation, and the case where light is emitted to the counter electrode side is referred to as top surface radiation.

In the case of bottom radiation, the pixel electrode 60208 is preferably formed of a transparent conductive film.
On the contrary, in the case of top radiation, the counter electrode 60214 is preferably formed of a transparent conductive film.

In the color display light emitting device, EL elements having each emission color of R, G, and B may be painted separately, or a single color EL element may be painted in a solid form, and R, G, and R, G, may be painted by a color filter.
The light emission of B may be obtained.

The configuration shown in FIG. 103 is just an example, and various configurations can be taken in addition to the configuration shown in FIG. 103 regarding the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. Further, as the light emitting layer, in addition to the element composed of the organic thin film shown in the figure, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used.

FIG. 104 (A) is an example of a top view (layout view) of a pixel having four transistors in one pixel. FIG. 104 (B) is an example of a cross-sectional view of the portion XX'shown in FIG. 104 (A).

FIG. 104 (A) shows the substrate 60300, the first wiring 60301, the second wiring 60302, the third wiring 60303, the fourth wiring 60304, the first transistor 60305, the second transistor 60306, and the third transistor. 60307, 4th transistor 60308
, Pixel electrode 60309, 5th wiring 60311, 6th wiring 60312, partition wall 60321
, Organic conductor film 60322, organic thin film 60323 and counter electrode 60324 are shown.
The first wiring 60301 is used as a source signal line, the second wiring 60302 is used as a writing gate signal line, and the third wiring 60303 is used as an erasing gate signal line.
04 is a signal line for reverse bias, the first transistor 60305 is a switching transistor, and the second transistor 60306 is an erasing transistor.
Transistor 60307 is a fourth transistor 60308 as a driving transistor.
Is preferably used as a transistor for reverse bias, the fifth wiring 60311 as a current supply line, and the sixth wiring 60312 as a power supply line for reverse bias.

The gate electrode of the first transistor 60305 is electrically connected to the second wiring 60302, and one of the source electrode and the drain electrode of the first transistor 60305 is electrically connected to the first wiring 60301. The other of the source electrode and the drain electrode of the transistor 60305 of 1 is electrically connected to the gate electrode of the third transistor 60307. The gate electrode of the first transistor 60305 is composed of a plurality of gate electrodes. By doing so, the leakage current in the off state of the first transistor 60305 can be reduced.

The gate electrode of the second transistor 60306 is electrically connected to the third wiring 60303, and one of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the fifth wiring 60311. The other of the source electrode and the drain electrode of the transistor 60306 of the second transistor is electrically connected to the gate electrode of the third transistor 60307. The gate electrode of the second transistor 60306 is composed of a plurality of gate electrodes. By doing so, the leakage current in the off state of the second transistor 60306 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60307 is the fifth wiring 60.
It is electrically connected to 311 and the other of the source and drain electrodes of the third transistor 60307 is electrically connected to the pixel electrode 60309. By doing so, the current flowing through the pixel electrode 60309 can be controlled by the third transistor 60307.

The gate electrode of the fourth transistor 60308 is electrically connected to the fourth wiring 60304, and one of the source electrode and the drain electrode of the fourth transistor 60308 is electrically connected to the sixth wiring 60312. The other of the source electrode and the drain electrode of the transistor 60308 of No. 4 is electrically connected to the pixel electrode 60309. By doing so, the potential of the pixel electrode 60309 can be controlled by the fourth transistor 60308, so that the bias in the opposite direction can be applied to the organic conductor film 60322 and the organic thin film 60323. By applying a bias in the opposite direction to the light emitting element composed of the organic conductor film 60322, the organic thin film 60323, and the like, the reliability of the light emitting element can be greatly improved.

An organic conductor film 60322 is provided on the pixel electrode 60309, and an organic thin film 603 is further provided.
23 (organic compound layer) is provided. On the organic thin film 60323 (organic compound layer),
A counter electrode 60324 is provided. The counter electrode 60324 may be formed in a solid shape so that it is commonly connected by all the pixels, or may be patterned by using a shadow mask or the like.

The light emitted from the organic thin film 60323 (organic compound layer) is emitted through either the pixel electrode 60309 or the counter electrode 60324.

In FIG. 104 (B), the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is referred to as bottom surface radiation, and the case where light is emitted to the counter electrode side is referred to as top surface radiation.

In the case of bottom radiation, the pixel electrode 60309 is preferably formed of a transparent conductive film.
On the contrary, in the case of top radiation, the counter electrode 60324 is preferably formed of a transparent conductive film.

In the color display light emitting device, EL elements having each emission color of R, G, and B may be painted separately, or a single color EL element may be painted in a solid form, and R, G, and R, G, may be painted by a color filter.
The light emission of B may be obtained.

The configuration shown in FIG. 104 is merely an example, and various configurations can be taken in addition to the configuration shown in FIG. 104 regarding the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. Further, as the light emitting layer, in addition to the element composed of the organic thin film shown in the figure, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 14)
In this embodiment, the structure of the EL element will be described. In particular, the structure of the organic EL element will be described.

The configuration of the mixed bonding type EL element will be described. As an example, a hole injection layer made of a hole injection material, a hole transport layer made of a hole transport material, a light emitting layer made of a light emitting material, an electron transport layer made of an electron transport material, and an electron injection layer made of an electron injection material. Etc. are not a laminated structure that can be clearly distinguished, but a layer in which a plurality of materials are mixed among materials such as hole injection material, hole transport material, light emitting material, electron transport material, and electron injection material ( A configuration having a mixed layer) (hereinafter, referred to as a mixed bonding type EL element) will be described.

FIGS. 105 (A), (B), (C) and (D) are schematic views showing the structure of a mixed-junction type EL element. The layer sandwiched between the anode 190101 and the cathode 190102 corresponds to the EL layer.

In FIG. 105 (A), the EL layer includes a hole transport region 190103 made of a hole transport material and an electron transport region 190104 made of an electron transport material, and the hole transport region 190103 is on the anode side of the electron transport region 190104. A mixed region 190 that is located in and contains both the hole transport material and the electron transport material between the hole transport region 190103 and the electron transport region 190104.
The configuration in which 105 is provided is shown.

It is characterized in that the concentration of the hole transporting material in the mixed region 190105 decreases and the concentration of the electron transporting material in the mixed region 190105 increases in the direction from the anode 190101 to the cathode 190102.

The method of setting the concentration gradient can be freely set. For example, the hole transport region 190103 consisting only of the hole transport material does not exist, and the concentration ratio of each functional material changes inside the mixed region 190105 containing both the hole transport material and the electron transport material (concentration gradient). It may have a configuration (having). Alternatively, the hole transport region 190 consisting only of the hole transport material
The electron transport region 190104 consisting only of 103 and the electron transport material does not exist, and the concentration ratio of each functional material changes (has a concentration gradient) inside the mixed region 190105 containing both the hole transport material and the electron transport material. It may be a configuration. Alternatively, the concentration ratio may be configured to vary depending on the anode or distance from the cathode. The change in the concentration ratio may be continuous.

Within the mixing region 190105, there is a region 190106 to which the luminescent material is added. The emission color of the EL element can be controlled by the light emitting material. The luminescent material allows the carriers to be trapped. As the light emitting material, various fluorescent dyes can be used in addition to a metal complex containing a quinoline skeleton, a metal complex containing a benzoxador skeleton, a metal complex containing a benzothiazol skeleton, and the like. By adding these light emitting materials, the light emitting color of the EL element can be controlled.

As the anode 190101, it is preferable to use an electrode material having a large work function in order to efficiently inject holes. For example, transparent electrodes such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), ZnO, SnO ₂ or In ₂ O ₃ can be used. Alternatively, the anode 190101 may be an opaque metallic material if it does not need to be translucent.

As the hole transport material, an aromatic amine compound or the like can be used.

As the electron transport material, a quinoline derivative, 8-quinolinol or a metal complex having a derivative thereof as a ligand (particularly, tris (8-quinolinolite) aluminum (Alq ₃ )) or the like can be used.

As the cathode 190102, it is preferable to use an electrode material having a small work function in order to efficiently inject electrons. Metals such as aluminum, indium, magnesium, silver, calcium, barium and lithium can be used alone. Alternatively, it may be an alloy of these metals, or an alloy of these metals with another metal.

FIG. 105 (B) shows a schematic diagram of an EL element having a configuration different from that of FIG. 105 (A). In addition, FIG.
The same parts as 05 (A) are shown using the same reference numerals, and the description thereof will be omitted.

In FIG. 105 (B), there is no region to which the light emitting material is added. However, the electron transport area 19
As the material to be added to 0104, a material having both electron transporting property and luminescent property (electron transporting luminescent material), for example, tris (8-quinolinolite) aluminum (Alq ₃ ) can be used to emit light.

Alternatively, as the material to be added to the hole transport region 190103, a material having both hole transport property and light emitting property (hole transport light emitting material) may be used.

FIG. 105 (C) shows a schematic diagram of an EL element having a configuration different from that of FIGS. 105 (A) and 105 (B).
Shown in. The same parts as those in FIGS. 105 (A) and 105 (B) are shown using the same reference numerals.
The description is omitted.

In FIG. 105 (C), the hole blocking material having a large energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital as compared with the hole transporting material has a region 190107 added in the mixed region 190105. .. The region 190107 to which the hole blocking material was added was transferred to the cathode 19010 from the region 190106 to which the light emitting material was added in the mixed region 190105.
By arranging them on the two sides, the carrier recombination rate can be increased and the luminous efficiency can be increased. The configuration in which the region 190107 to which the hole blocking material is added is provided is particularly effective in an EL device that utilizes light emission (phosphorescence) by a triple photoexciter.

FIG. 105 (D) shows a schematic diagram of an EL element having a configuration different from that of FIGS. 105 (A), 105 (B) and 105 (C). The same parts as those in FIGS. 105 (A), 105 (B) and 105 (C) are shown using the same reference numerals, and the description thereof will be omitted.

In FIG. 105 (D), the electron blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital than the electron transporting material has a region 190108 added in the mixed region 190105. The region 190108 to which the electron blocking material was added is the anode 19010 from the region 190106 to which the light emitting material was added in the mixed region 190105.
By arranging it on one side, the recombination rate of carriers can be increased and the luminous efficiency can be increased. The configuration in which the region 190108 to which the electron blocking material is added is provided is particularly effective in an EL device that utilizes light emission (phosphorescence) by a triple photoexciter.

105 (E) is FIG. 105 (A), FIG. 105 (B), FIG. 105 (C) and FIG. 105 (D).
It is a schematic diagram which shows the structure of the mixed junction type EL element different from). In FIG. 105 (E), E
An example of a configuration having a region 190109 to which a metal material is added is shown in a portion of the EL layer in contact with the electrode of the L element. In FIG. 105 (E), the same parts as those in FIGS. 105 (A) to 105 (D) are shown by using the same reference numerals, and the description thereof will be omitted. The configuration shown in FIG. 105 (E) is, for example, the cathode 1
MgAg (Mg—Ag alloy) may be used as 90102, and the electron transport region 190104 to which the electron transport material is added may have a region 190109 in which an Al (aluminum) alloy is added to the region in contact with the cathode 190102. With the above configuration, it is possible to prevent oxidation of the cathode and increase the efficiency of electron injection from the cathode. In this way, the life of the mixed bonding type EL element can be extended. The drive voltage can also be lowered.

As a method for producing the mixed bonding type EL element, a co-deposited method or the like can be used.

In the mixed bonding type EL element as shown in FIGS. 105 (A) to 105 (E), there is no clear layer interface, and charge accumulation can be reduced. In this way, the life can be extended. The drive voltage can also be lowered.

The configurations shown in FIGS. 105 (A) to 105 (E) can be freely combined and implemented.

The configuration of the mixed bonding type EL element is not limited to this. A known configuration can be freely used.

The organic material constituting the EL layer of the EL element may be a low molecular weight material or a high molecular weight material. Alternatively, both of these materials may be used. When a low molecular weight material is used as the organic compound material, a film can be formed by a vapor deposition method. On the other hand, when a polymer material is used as the EL layer, the polymer material can be dissolved in a solvent to form a film by a spin coating method or an inkjet method.

The EL layer may be made of a medium molecular weight material. In the present specification, the medium-molecular-weight organic light-emitting material means an organic light-emitting material having no sublimation property and having a degree of polymerization of about 20 or less. When a medium-molecular-weight material is used as the EL layer, a film can be formed by an inkjet method or the like.

A low molecular weight material, a high molecular weight material, and a medium molecular weight material may be used in combination.

The EL element may use either light emission (fluorescence) from singlet excitons or light emission (phosphorescence) from triplet excitons.

Next, the vapor deposition apparatus for manufacturing the display apparatus will be described with reference to the drawings.

The display device may be manufactured by forming an EL layer. The EL layer is formed by containing at least a part of a material expressing electroluminescence. The EL layer may be composed of a plurality of layers having different functions. In that case, the EL layer may be formed by combining layers having different functions, which are also called a hole injection transport layer, a light emitting layer, an electron injection transport layer, and the like.

FIG. 10 shows a configuration of a thin-film deposition apparatus for forming an EL layer on an element substrate on which a transistor is formed.
Shown in 6. In this thin-film deposition apparatus, a plurality of processing chambers are connected to the transport chambers 190260 and 190261. The processing chamber includes a load chamber 190262 for supplying the substrate, an unload chamber 190263 for collecting the substrate, a heat treatment chamber 190268, a plasma treatment chamber 190272, and an EL.
As one of the electrodes of the film formation processing chamber 190269 to 190275 for depositing materials and EL elements.
Film formation processing chamber 1902 for forming aluminum or a conductive film containing aluminum as a main component
Contains 76. Gate valves 190277a to 19027 between the transport chamber and each processing chamber
7 m is provided, and the pressure in each treatment chamber can be controlled independently to prevent mutual contamination between treatment chambers.

The substrate introduced from the load chamber 190262 into the transport chamber 190260 is carried into a predetermined processing chamber by the rotatably provided arm-type transport means 190266. The substrate is conveyed from one processing chamber to another by the conveying means 190266. The transport chamber 190260 and the transport chamber 190261 are connected by a film forming processing chamber 190270, where the transport means 19026.
The substrate is delivered by 6 and the transport means 190267.

Each processing chamber connected to the transport chamber 190260 and the transport chamber 190261 is maintained in a reduced pressure state. Therefore, in this thin-film deposition apparatus, the EL layer is continuously formed without exposing the substrate to the atmosphere. Since the display panel after the film formation process of the EL layer may be deteriorated by water vapor or the like, in this vapor deposition apparatus, a sealing process is performed to perform a sealing process before exposing the EL layer to the atmosphere in order to maintain the quality. The chamber 190265 is connected to the transport chamber 190261. Since the sealing processing chamber 190265 is placed under atmospheric pressure or a reduced pressure close to that of atmospheric pressure, the transport chamber 1902
An intermediate treatment chamber 190264 is also provided between 61 and the sealing treatment chamber 190265. The intermediate processing chamber 190264 is provided to transfer the substrate and to buffer the pressure between the chambers.

The load chamber, unload chamber, transfer chamber, and film formation processing chamber are provided with exhaust means for keeping the chamber under reduced pressure. As the exhaust means, various vacuum pumps such as a dry pump, a turbo molecular pump, and a diffusion pump can be used.

In the vapor deposition apparatus shown in FIG. 106, the number of processing chambers connected to the transport chamber 190260 and the transport chamber 190261 and their configurations can be appropriately combined according to the laminated structure of the EL elements. An example of the combination is shown below.

The heat treatment chamber 190268 first heats a substrate on which a lower electrode, an insulating partition wall, or the like is formed to perform degassing treatment. In the plasma processing chamber 190272, the surface of the base electrode is treated with a noble gas or oxygen plasma. This plasma treatment is performed to clean the surface, stabilize the surface state, and stabilize the physical or chemical state of the surface (for example, work function).

The film forming processing chamber 190269 is a processing chamber for forming an electrode buffer layer in contact with one electrode of the EL element. The electrode buffer layer has carrier injection properties (hole injection or electron injection).
This layer suppresses the occurrence of short circuits or dark spot defects in EL elements. Typically, the electrode buffer layer is an organic-inorganic mixed material having a resistivity of 5 × 10 ⁴ to 1 × 10 ⁶ Ωcm and 30 to 3
It is formed to a thickness of 00 nm. The film forming chamber 190271 is a processing chamber for forming a hole transport layer.

The structure of the light emitting layer in the EL element differs depending on whether it emits monochromatic light or white light. It is preferable that the film forming processing chamber is arranged accordingly in the vapor deposition apparatus. For example
When forming three types of EL elements having different emission colors on the display panel, it is necessary to form a light emitting layer corresponding to each emission color. In this case, the film forming processing chamber 190270 is used for forming a film of the first light emitting layer, and the film forming processing chamber 190273 is used for forming a film of the second light emitting layer.
74 can be used for film formation of the third light emitting layer. By separating the film forming processing chamber for each light emitting layer, mutual contamination by different light emitting materials can be prevented, and the throughput of the film forming processing can be improved.

It should be noted that three types of EL materials having different emission colors may be sequentially vapor-deposited in the film-forming processing chamber 190270, the film-forming processing chamber 190273, and the film-forming processing chamber 190274. In this case, a shadow mask is used, and the mask is shifted according to the area to be vapor-deposited for vapor deposition.

When forming an EL element that emits white light, light emitting layers having different emission colors are vertically stacked. Even in that case, the element substrate can be sequentially moved in the film forming processing chamber to form a film for each light emitting layer. Alternatively, different light emitting layers can be continuously formed in the same film forming processing chamber.

In the film forming processing chamber 190276, an electrode is formed on the EL layer. Although an electron beam vapor deposition method or a sputtering method can be applied to the electrode formation, it is preferable to use a resistance heating vapor deposition method.

The element substrate, which has been formed up to the electrode, passes through the intermediate processing chamber 190264 and the sealing processing chamber 1902.
It is carried in to 65. The sealing processing chamber 190265 is filled with an inert gas such as helium, argon, neon, or nitrogen, and a sealing plate is attached to the side where the EL layer of the element substrate is formed in that atmosphere. Stop. In the sealed state, the element substrate and the sealing plate may be filled with an inert gas or may be filled with a resin material. The sealing processing chamber 190265 is provided with a dispenser for drawing a sealing material, a mechanical element such as a fixed stage or an arm for fixing the sealing plate facing the element substrate, a dispenser for filling a resin material, a spin coater, and the like. Has been done.

FIG. 107 shows the internal configuration of the film forming processing chamber. The film formation processing chamber is kept under reduced pressure, and FIG.
In No. 7, the inside sandwiched between the top plate 190391 and the bottom plate 190392 is the interior, which indicates the interior kept in a decompressed state.

The treatment chamber is provided with one or more evaporation sources. This is because it is preferable to provide a plurality of evaporation sources when forming a plurality of layers having different compositions or co-depositing different materials. In FIG. 107, the evaporation sources 190381a, 190381b, and 190381c are attached to the evaporation source holder 190380. The evaporation source holder 190380 is held by the articulated arm 190383. The articulated arm 190383 allows the position of the evaporation source holder 190380 to be freely moved within its movable range by expanding and contracting the joints. Alternatively, a distance sensor 190382 is provided in the evaporation source holder 190380, and the evaporation source 19038 is provided.
The distance between 1a to 190381c and the substrate 190389 may be monitored to control the optimum distance during vapor deposition. In that case, the articulated arm may be displaced in the vertical direction (Z direction) to the articulated arm.

The board stage 190386 and the board chuck 190387 are paired with the board 190389.
To fix. The substrate stage 190386 may have a built-in heater so that the substrate 190389 can be heated. The substrate 190389 is fixed to the substrate stage 190386 and carried in and out by locking the substrate chuck 190387. At the time of vapor deposition, a shadow mask 190390 having an opening corresponding to the pattern to be vapor-deposited can also be used, if necessary. In that case, the shadow mask 190390 is the substrate 190389 and the evaporation source 19
It is arranged between 0381a and 190381c. Shadow mask 190390
Is fixed to the substrate 190389 by the mask chuck 190388 or at regular intervals. When the shadow mask 190390 needs to be aligned, a camera is placed in the processing chamber, and the mask chuck 190388 is provided with a positioning means for fine movement in the XY−θ direction to perform the alignment.

The evaporation source 190381 is provided with a vapor deposition material supply means for continuously supplying the vapor deposition material to the evaporation source. The vaporized material supply means includes material supply sources 190385a, 190385b, 190385c arranged at positions distant from the evaporation source 190381, and a material supply pipe 190384 connecting the two. Typically, material sources 190385a, 190385b
, 190385c are provided corresponding to the evaporation source 190381. In the case of FIG. 107,
The material supply source 190385a and the evaporation source 190381a correspond to each other. Material source 1903
The same applies to 85b and the evaporation source 190381b, and the material supply source 190385c and the evaporation source 190381c.

An air flow transfer method, an aerosol method, or the like can be applied to the supply method of the thin-film deposition material. In the air flow transfer method, fine powder of the vapor-deposited material is carried on the air flow, and is conveyed to the evaporation source 190381 using an inert gas or the like. The aerosol method is a vapor deposition in which a raw material liquid in which a vapor-deposited material is dissolved or dispersed in a solvent is conveyed, and the aerosol is vaporized by a sprayer to vaporize the solvent in the aerosol. In either case, the evaporation source 190381 is provided with a heating means, and the conveyed vaporized material is evaporated to form a film on the substrate 190389. In the case of FIG. 107, the material supply pipe 19
The 0384 is made of a thin tube that can be flexibly bent and has a rigidity that does not deform even under a reduced pressure state.

When the air flow transfer method or the aerosol method is applied, the film formation may be performed in the film formation processing chamber at atmospheric pressure or lower, preferably under a reduced pressure of 133 Pa to 13300 Pa.
The film forming chamber can be filled with an inert gas such as helium, argon, neon, krypton, xenon, or nitrogen, or the pressure can be adjusted while supplying the gas (while simultaneously exhausting). In the film forming treatment room where the oxide film is formed, a gas such as oxygen or nitrous oxide may be introduced to create an oxidizing atmosphere. Alternatively, a gas such as hydrogen may be introduced into the film forming treatment chamber where the organic material is vapor-deposited to create a reducing atmosphere.

As another method of supplying the vaporized material, a screw may be provided in the material supply pipe 190384 to continuously extrude the vaporized material toward the evaporation source.

According to this thin-film deposition apparatus, even a large-screen display panel can be continuously formed with good uniformity. Since it is not necessary to replenish the vapor-deposited material each time the vapor-deposited material is exhausted from the evaporation source, the throughput can be improved.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 15)
In this embodiment, the structure of the EL element will be described. In particular, the structure of the inorganic EL element will be described.

The inorganic EL element is classified into a dispersed inorganic EL element and a thin film type inorganic EL element according to the element configuration. The former has an electroluminescent layer in which particles of the luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of the luminescent material, but is accelerated by a high electric field. It is common in that it requires electroluminescence. The obtained luminescence mechanism includes a donor-acceptor recombination type luminescence that utilizes the donor level and the acceptor level, and a localized luminescence that utilizes the inner-shell electron transition of the metal ion. Generally, in distributed inorganic EL, donor-
In many cases, acceptor recombination type light emission and thin film type inorganic EL element are localized type light emission.

The luminescent material is composed of a base material and an impurity element that serves as a luminescent center. By changing the impurity elements contained, it is possible to obtain light emission of various colors. As a method for producing the luminescent material, various methods such as a solid phase method or a liquid phase method (coprecipitation method) can be used. Alternatively, a spray pyrolysis method, a metathesis method, a method by a thermal decomposition reaction of a precursor, a reverse micelle method or a method combining these methods and high-temperature firing, a liquid phase method such as a freeze-drying method, and the like can also be used.

In the solid-phase method, the base material and the impurity element or the compound containing the impurity element are weighed and mixed in a mortar.
This is a method in which the base material contains an impurity element by heating and firing in an electric furnace to cause a reaction. The firing temperature is preferably 700 to 1500 ° C. This is because if the temperature is too low, the solid-phase reaction does not proceed, and if the temperature is too high, the base material is decomposed. Although firing may be performed in the powder state, firing is preferably performed in the pellet state. Although it requires firing at a relatively high temperature, it is a simple method, so it is highly productive and suitable for mass production.

The liquid phase method (co-precipitation method) is a method in which a base material or a compound containing a base material is reacted with an impurity element or a compound containing an impurity element in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, the particle size is small, and the reaction can proceed even at a low firing temperature.

Sulfide, oxide, and nitride can be used as the base material used for the light emitting material. Examples of sulfides include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), and sulfide. Sulfide (BaS) or the like can be used. As oxide, zinc oxide (ZnO), yttrium oxide _(Y 2 _{O 3)} or the like can be used. Examples of the nitride include aluminum nitride (AlN), gallium nitride (GaN), and the like.
Indium nitride (InN) or the like can be used. In addition, zinc selenide (ZnSe)
, Zinc telluride (ZnTe) and the like can also be used, and calcium sulfide-gallium (CaG).
a ₂ S _4), strontium sulfide - gallium (SrGa ₂ S _4), barium sulfide - gallium (BaGa ₂ S _4), or may be a ternary mixed crystal and the like.

Manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium are the emission centers of localized luminescence. (Pr) and the like can be used. Halogen elements such as fluorine (F) and chlorine (Cl) may be added as charge compensation.

On the other hand, the first that forms a donor level as the emission center of donor-acceptor recombined luminescence.
A luminescent material containing an impurity element of the above and a second impurity element forming an acceptor level can be used. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al) and the like can be used. As the second impurity element, for example, copper (Cu),
Silver (Ag) or the like can be used.

When a donor-acceptor recombination type luminescent material is synthesized by the solid phase method, the parent material, a compound containing a first impurity element or a first impurity element, and a second impurity element or a second are used.
The compounds containing the impurity elements of the above are weighed, mixed in a mortar, and then heated and baked in an electric furnace. As the base material, the above-mentioned base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) and the like can be used, and examples of the compound containing the second impurity element or the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) and the like can be used. The firing temperature is preferably 700 to 1500 ° C.
This is because if the temperature is too low, the solid-phase reaction does not proceed, and if the temperature is too high, the base material is decomposed. Although firing may be performed in the powder state, firing is preferably performed in the pellet state.

As the impurity element when the solid phase reaction is used, a compound composed of the first impurity element and the second impurity element may be used in combination. In this case, impurity elements are easily diffused,
Since the solid-phase reaction easily proceeds, a uniform luminescent material can be obtained. Further, since no extra impurity element is contained, a highly pure luminescent material can be obtained. Examples of the compound composed of the first impurity element and the second impurity element include copper chloride (CuCl) and silver chloride (CuCl).
AgCl) and the like can be used.

The concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, preferably in the range of 0.05 to 5 atom%.

In the case of the thin film type inorganic EL, the electroluminescent layer is a layer containing the above-mentioned light emitting material, and is subjected to a resistance heating vapor deposition method.
Vacuum vapor deposition method such as electron beam vapor deposition (EB vapor deposition), physical vapor deposition method such as sputtering method (
Chemical vapor deposition (CV) such as PVD), organometallic CVD method, hydride transport reduced pressure CVD method, etc.
D), it can be formed by using the atomic epitaxy method (ALE) or the like.

FIGS. 108 (A) to 108 (C) show an example of a thin film type inorganic EL element that can be used as a light emitting element. In FIGS. 108 (A) to 108 (C), the light emitting element is the first electrode layer 120100.
Includes an electroluminescent layer 120102 and a second electrode layer 120103.

The light emitting element shown in FIGS. 108 (B) and 108 (C) has a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light emitting element of FIG. 108 (A). The light emitting element shown in FIG. 108 (B) has an insulating film 120104 between the first electrode layer 120100 and the electroluminescent layer 120102, and the light emitting element shown in FIG. 108 (C) is the first electrode layer 120100. And electroluminescent layer 120
Insulating film 120105, second electrode layer 120103 and electroluminescent layer 12010 between 102
It has an insulating film 120106 between the two. As described above, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a laminated structure having a plurality of layers.

In addition, in FIG. 108 (B), the insulating film 120104 is in contact with the first electrode layer 120100.
However, the order of the insulating film and the electroluminescent layer is reversed, and the second electrode layer 120103 is provided.
The insulating film 120104 may be provided so as to be in contact with the insulating film 120104.

In the case of the dispersed inorganic EL, the particle-like luminescent material is dispersed in the binder to form a film-like electroluminescent layer. Process into particles. If particles of a sufficiently desired size cannot be obtained by the method for producing a luminescent material, the particles may be processed into particles by pulverization or the like in a mortar or pestle. What is a binder?
It is a substance for fixing a granular light emitting material in a dispersed state and holding it in a shape as an electroluminescent layer. The luminescent material is uniformly dispersed and fixed in the electroluminescent layer by a binder.

In the case of dispersed inorganic EL, the electroluminescent layer is formed by a droplet ejection method capable of selectively forming an electroluminescent layer, a printing method (screen printing, offset printing, etc.), a coating method such as a spin coating method, or dipping. A method, a dispenser method, or the like can also be used. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the electroluminescent layer containing the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

FIGS. 109 (A) to 109 (C) show an example of a dispersed inorganic EL element that can be used as a light emitting element. The light emitting element in FIG. 109 (A) has a laminated structure of a first electrode layer 120200, an electroluminescent layer 120202, and a second electrode layer 120203, and a light emitting material 120201 held by a binder in the electroluminescent layer 120202. Including.

Insulating material can be used for the binder. As the insulating material, an organic material and an inorganic material can be used. Alternatively, a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose-based resin, a resin such as polyethylene, polypropylene, a polystyrene-based resin, a silicone resin, an epoxy resin, or vinylidene fluoride can be used. Alternatively, an aromatic polyamide, a heat-resistant polymer such as polybenzimidazole, or a siloxane resin may be used. The siloxane resin is Si—O—
It corresponds to a resin containing a Si bond. The skeleton structure of siloxane is composed of the bonds of silicon (Si) and oxygen (O). As the substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as the substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as the substituent. Or
A resin material such as a vinyl resin such as polyvinyl alcohol or polyvinyl butyral, a phenol resin, a novolak resin, an acrylic resin, a melamine resin, a urethane resin, or an oxazole resin (polybenzoxazole) may be used. Barium titanate (B) is added to these resins.
It is also possible to adjust the dielectric constant by appropriately mixing fine particles having a high dielectric constant such as aTiO ₃ ) or strontium titanate (SrTiO _3).

Examples of the inorganic insulating material contained in the binder include silicon oxide (SiOx) and silicon nitride (SiNx).
), Silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, aluminum oxide containing oxygen and nitrogen (Al ₂ O ₃ ), titanium oxide (TiO ₂ )
, BaTIO ₃ , SrTIO ₃ , Lead Titanate (PbTIO ₃ ), Potassium niobate (KN)
bO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y)
₂ O _3), zirconium oxide _(ZrO 2), it may be formed of a material selected from materials including ZnS other inorganic insulating material. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the electroluminescent layer composed of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. ..

In the fabrication process, the luminescent material is dispersed in a solution containing a binder. As the solvent of the solution containing the binder, a method of dissolving the binder material to form an electroluminescent layer (various wet processes) and a solvent capable of preparing a solution having a viscosity suitable for a desired film thickness may be appropriately selected. .. For example, an organic solvent or the like can be used as the solvent. When a siloxane resin is used as the binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoshiki-3 methyl-1-butanol (also referred to as MMB) and the like can be used as the solvent.

The light emitting element shown in FIGS. 109 (B) and 109 (C) has a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light emitting element of FIG. 109 (A). The light emitting element shown in FIG. 109 (B) has an insulating film 120204 between the first electrode layer 120200 and the electroluminescent layer 120202, and the light emitting element shown in FIG. 109 (C) is the first electrode layer 120200. And electroluminescent layer 120
Insulating film 120205, second electrode layer 120203 and electroluminescent layer 12020 between 202
It has an insulating film 120206 between the two. As described above, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a laminate having a plurality of layers.

In FIG. 109 (B), the insulating film 120204 is provided so as to be in contact with the first electrode layer 120200. However, the order of the insulating film and the electroluminescent layer is reversed, and the insulating film is insulated so as to be in contact with the second electrode layer 120203. The film 120204 may be provided.

The material that can be used for the insulating film, such as the insulating film 120104 in FIG. 108 and the insulating film 120204 in FIG. 109, preferably has a high dielectric strength and a dense film quality.
Furthermore, it is preferable that the dielectric constant is high. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTi)
O _3), strontium titanate (SrTiO _3), lead titanate (PbTiO _3), silicon nitride _(Si 3 _{N 4)} or zirconium oxide (ZrO ₂₎ or the like, or mixtures of these films, or two or more laminated films Can be used. These insulating films can be formed by sputtering, vapor deposition, CVD, or the like. The insulating film may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed by using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but is preferably 10 to 10.
It is in the range of 1000 nm.

The light emitting element can emit light by applying a voltage between a pair of electrodes sandwiching the electroluminescent layer, but can operate in either DC drive or AC drive.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 16)
In this embodiment, an example of a display device, particularly a case where optical handling is performed, will be described.

The rear projection display device 130100 shown in FIGS. 110A and 110B includes a projector unit 130111, a mirror 130112, and a screen panel 130101.
In addition, a speaker 130102 and operation switches 130104 may be provided. The projector unit 130111 is a housing 130 of a rear projection display device 130100.
Mirror 13011 is arranged at the bottom of 110 and projects light that projects an image based on an image signal.
Project towards 2. The rear projection type display device 130100 is a screen panel 130101.
It is configured to display the image projected from the back of.

On the other hand, FIG. 111 shows the front projection type display device 130200. The front projection type display device 130200 includes a projector unit 130111 and a projection optical system 130201. The projection optical system 130201 is configured to project an image on a screen or the like arranged on the front surface.

The rear projection type display device 130100 shown in FIG. 110 and the front projection type display device 1 shown in FIG. 111.
The configuration of the projector unit 130111 applied to the 30200 will be described below.

FIG. 112 shows a configuration example of the projector unit 130111. The projector unit 130111 includes a light source unit 130301 and a modulation unit 130304.
It has. The light source unit 130301 includes a light source optical system 1 including lenses and the like.
It includes 30303 and a light source lamp 130302. The light source lamp 130302 is housed in a housing so that stray light does not diffuse. As the light source lamp 130302, for example, a high-pressure mercury lamp or a xenon lamp capable of emitting a large amount of light is used. The light source optical system 130303 is configured by appropriately providing an optical lens, a film having a polarizing function, a film for adjusting a phase difference, an IR film, and the like. And the light source unit 130301
Is arranged so that the synchrotron radiation enters the modulation unit 130304. The modulation unit 130304 includes a plurality of display panels 130308, a color filter, a dichroic mirror 130305, a total reflection mirror 130306, a prism 130309, and a projection optical system 13.
It is equipped with 0310. The light emitted from the light source unit 130301 is separated into a plurality of optical paths by the dichroic mirror 130305.

Each optical path is provided with a color filter that transmits light of a predetermined wavelength or wavelength band, and a display panel 130308. The transmissive display panel 130308 modulates the transmitted light based on the video signal. The light of each color transmitted through the display panel 130308 is the prism 130.
The image is displayed on the screen by incident on 309 and passing through the projection optical system 130310. The Fresnel lens may be arranged between the mirror and the screen. Then, the projected light projected by the projector unit 130111 and reflected by the mirror is converted into substantially parallel light by the Fresnel lens and projected on the screen.

The projector unit 130111 shown in FIG. 113 is a reflective display panel 130407,
The configuration including 130408 and 130409 is shown.

The projector unit 130111 shown in FIG. 113 includes a light source unit 130301 and a modulation unit 130400. The light source unit 130301 may have the same configuration as that shown in FIG. 112. The light from the light source unit 130301 is the dichroic mirror 130.
It is divided into a plurality of optical paths by 401, 130402, and a total reflection mirror 130403, and is incident on the polarizing beam splitters 130404, 130405, and 130406. The polarizing beam splitters 130404, 130405, and 130406 are provided corresponding to the reflective display panels 130407, 130408, and 130409 corresponding to each color. The reflective display panels 130407, 130408, and 130409 modulate the reflected light based on the video signal. The light of each color reflected by the reflective display panels 130407, 130408, and 130409 is combined by being incident on the prism 130309 and projected through the projection optical system 130411.

The light emitted from the light source unit 130301 is transmitted by the dichroic mirror 130401 only in the red wavelength region, and reflects the light in the green and blue wavelength regions. Further, the dichroic mirror 130402 reflects only light in the green wavelength region. The light in the red wavelength region transmitted through the dichroic mirror 130401 is reflected by the total reflection mirror 130403 and is reflected.
The light in the blue wavelength region is incident on the polarization beam splitter 130405, and the light in the green wavelength region is incident on the polarization beam splitter 130406. The polarizing beam splitters 130404, 130405, and 130406 have a function of separating incident light into P-polarized light and S-polarized light, and have a function of transmitting only P-polarized light. The reflective display panels 130407, 130408, and 130409 polarize the incident light based on the video signal.

Only the S-polarized light corresponding to each color is incident on the reflective display panels 130407, 130408, and 130409 corresponding to each color. Reflective display panels 130407, 130408,
130409 may be a liquid crystal panel. At this time, the liquid crystal panel operates in the electric field control birefringence mode (ECB). The liquid crystal molecules are vertically oriented at a certain angle with respect to the substrate. Therefore, in the reflective display panels 130407, 130408, and 130409, the display molecules are oriented so as to reflect the incident light without changing the polarization state when the pixels are in the off state. Then, when the pixel is in the on state, the orientation state of the display molecule changes, and the polarization state of the incident light changes.

The projector unit 130111 shown in FIG. 113 can be applied to the rear projection type display device 130100 shown in FIG. 110 and the front projection type display device 130200 shown in FIG. 111.

The projector unit shown in FIG. 114 shows a single plate type configuration. The projector unit 130111 shown in FIG. 114 (A) includes a light source unit 130301 and a display panel 13.
It includes 0507, a projection optical system 130511, and a retardation plate 130504. Projection optics 1
The 30511 is composed of one or more lenses. The display panel 130507 may be provided with a color filter.

FIG. 114 (B) shows a projector unit 13 that operates in a field sequential manner.
The configuration of 0111 is shown. The field sequential method is a method in which light of each color such as red, green, and blue is sequentially incident on the display panel by shifting the time in time, and color display is performed without a color filter. In particular, when combined with a display panel having a high response speed to changes in the input signal, a high-definition image can be displayed. In FIG. 114 (B), the light source unit 1
A rotary color filter plate 130505 provided with a plurality of color filters such as red, green, and blue is provided between the 30301 and the display panel 130508.

The projector unit 130111 shown in FIG. 114 (C) is used as a color display method.
The configuration of the color separation method using a macro lens is shown. In this method, a microlens array 130506 is provided on the light incident side of the display panel 130509, and light of each color is illuminated from each direction to realize color display. The projector unit 130111 adopting this method has a feature that the light from the light source unit 130301 can be effectively used because the loss of light due to the color filter is small. FIG. 114
The projector unit 130111 shown in (C) includes a dichroic mirror 130501, a dichroic mirror 130502, and a dichroic mirror 130503 for red light so as to illuminate the display panel 130509 with light of each color from each direction.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

(Embodiment 17)
In this embodiment, an example of an electronic device will be described.

FIG. 115 shows a display panel module in which the display panel 900101 and the circuit board 900111 are combined. The display panel 900101 has a pixel unit 900102, a scanning line driving circuit 900103, and a signal line driving circuit 900104. For example, a control circuit 900112 and a signal division circuit 900113 are formed on the circuit board 900111. The display panel 900101 and the circuit board 900111 are connected by a connection wiring 900114. FPC or the like can be used for the connection wiring.

In the display panel 900101, a pixel unit 900102 and a part of peripheral drive circuits (a drive circuit having a low operating frequency among a plurality of drive circuits) are integrally formed on a substrate by using transistors, and a part of the peripheral drive circuits (a plurality of drive circuits) are formed. A drive circuit having a high operating frequency among the drive circuits) is formed on an IC chip, and the IC chip is displayed on a display panel 9001 by COG (Chip On Glass) or the like.
It may be implemented in 01. By doing so, the area of the circuit board 900111 can be reduced, and a small display device can be obtained. Alternatively, the IC chip is TAB (Tape Out).
It may be mounted on the display panel 900101 using o Bonding) or a printed circuit board. By doing so, the area of the display panel 900101 can be reduced, so that a display device having a small frame size can be obtained.

For example, in order to reduce power consumption, a pixel portion is formed on a glass substrate using a transistor, all peripheral drive circuits are formed on an IC chip, and the IC chip is mounted on a display panel by COG or TAB. You may.

The television receiver can be completed by the display panel module shown in FIG. 115. FIG. 116 is a block diagram showing a main configuration of a television receiver. Tuner 9002
01 receives a video signal and an audio signal. The video signal is the video signal amplifier circuit 900202 and
The video signal processing circuit 900203 that converts the signal output from the video signal amplifier circuit 900202 into color signals corresponding to each of the red, green, and blue colors, and the control circuit 900212 for converting the video signal into the input specifications of the drive circuit. Is processed by. Control circuit 9002
12 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 900213 may be provided on the signal line side, and the input digital signal may be divided into m (m is a positive integer) and supplied.

Of the signals received by the tuner 900201, the audio signal is the audio signal amplifier circuit 900205.
The output is supplied to the speaker 900207 via the audio signal processing circuit 900206. The control circuit 900208 inputs control information of the receiving station (reception frequency) and volume to the input unit 90.
It receives from 0209 and sends a signal to the tuner 900201 or the audio signal processing circuit 900206.

FIG. 11 shows a television receiver incorporating a display panel module having a form different from that of FIG. 116.
It is shown in 7 (A). In FIG. 117 (A), the display screen 9 housed in the housing 900301.
00302 is formed by a display panel module. In addition, speaker 900303, operation switch 900304, input means 900305, sensor 900306 (force, displacement, position,
Velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness,
An electric field, current, voltage, electric power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays (including a function for measuring), a microphone 900307, etc. may be appropriately provided.

FIG. 117 (B) shows a television receiver that can carry only the display wirelessly. The housing 900123 contains a battery and a signal receiver, and the battery contains a display unit 900133, a speaker unit 900317, and a sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, etc.). Magnetism, temperature, chemistry, voice, time, hardness, electric field, electric current,
Drives 900319 and macrophone 900320 (including the ability to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared). Battery is charger 9
It is possible to charge repeatedly at 00130. The charger 900310 can transmit and receive video signals, and can transmit the video signals to the signal receiver of the display.
The device shown in FIG. 117 (B) is controlled by the operation key 900316. Alternatively, the device shown in FIG. 117 (B) is a charger 90 by operating the operation key 900316.
It is possible to send a signal to 0310. That is, it may be a video / audio bidirectional communication device. Alternatively, the device shown in FIG. 117 (B) sends a signal to the charger 900310 by operating the operation key 900316, and further causes another electronic device to receive a signal that can be transmitted by the charger 900310. Communication control of electronic devices is also possible. That is, it may be a general-purpose remote control device. In addition, input means 900318 or the like may be provided as appropriate. In addition, the content (may be a part) described in each figure of this embodiment is displayed on the display unit 90.
It can be applied to 0313.

FIG. 118 (A) shows a module in which the display panel 900401 and the printed wiring board 900402 are combined. The display panel 900401 includes a pixel unit 900403 provided with a plurality of pixels, a first scanning line driving circuit 900404, and a second scanning line driving circuit 9004.
05 and a signal line drive circuit 900406 that supplies a video signal to the selected pixels may be provided.

The printed wiring board 900402 includes a controller 900407 and a central processing unit (CPU).
) 900408, memory 900409, power supply circuit 900410, audio processing circuit 90041
1 and a transmission / reception circuit 900412 and the like are provided. The printed wiring board 900402 and the display panel 900401 are connected by a flexible wiring board (FPC) 900413. The flexible wiring board (FPC) 900413 may be provided with a holding capacitance, a buffer circuit, or the like to prevent noise from being generated in the power supply voltage or signal and an increase in signal rise time. The controller 900407, the audio processing circuit 900411, the memory 9004000, the central processing unit (CPU) 900408, the power supply circuit 900410, and the like are included.
It can also be mounted on the display panel 900401 using the COG (Chip On Glass) method. The scale of the printed wiring board 900402 can be reduced by the COG method.

Interface (I / F) section 900144 provided on the printed wiring board 900402
Various control signals are input and output via. An antenna port 900415 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 900402.

FIG. 118 (B) shows a block diagram of the module shown in FIG. 118 (A). This module includes VRAM900416, DRAM900417, flash memory 900418, and the like as the memory 900409. The VRAM 900416 stores image data to be displayed on the panel, the DRAM 900417 stores image data or audio data, and the flash memory stores various programs.

The power supply circuit 900410 supplies electric power for operating the display panel 900401, the controller 900407, the central processing unit (CPU) 9004000, the audio processing circuit 90041, the memory 9004000, and the transmission / reception circuit 900142. However, depending on the specifications of the panel, the power supply circuit 900410 may be provided with a current source.

The central processing unit (CPU) 900408 has a control signal generation circuit 900420 and a decoder 90.
It has 0421, a register 900242, an arithmetic circuit 900423, a RAM90024, an interface (I / F) unit 900419 for a central processing unit (CPU) 9004000, and the like. Central processing unit (CPU) via interface (I / F) unit 900419
The various signals input to 900408 are once held in the register 900422 and then input to the arithmetic circuit 900423, the decoder 900421, and the like. The arithmetic circuit 900423 performs an arithmetic operation based on the input signal, and specifies a place to send various instructions. On the other hand, decoder 9
The signal input to 00421 is decoded and input to the control signal generation circuit 900420. The control signal generation circuit 900420 generates signals including various instructions based on the input signal, and generates a signal including various instructions at a location specified in the arithmetic circuit 900243, specifically, a memory 900409,
It is sent to the transmission / reception circuit 900142, the voice processing circuit 900411, the controller 900407, and the like.

The memory 900409, the transmission / reception circuit 900142, the voice processing circuit 900411, and the controller 900407 each operate according to the received instructions. The operation will be briefly described below.

The signal input from the input means 900425 is the interface (I / F) unit 90041.
Central processing unit (CPU) 9004 mounted on the printed wiring board 900402 via 4.
Sent to 08. The control signal generation circuit 900420 converts the image data stored in the VRAM 900416 into a predetermined format according to the signal sent from the input means 900425 such as a pointing device or a keyboard, and sends the image data to the controller 900407.

The controller 900407 is a central processing unit (CPU) 9004 according to the specifications of the panel.
Data processing is applied to the signal including the image data sent from 08, and the display panel 90040
Supply to 1. The controller 900407 has Hs based on the power supply voltage input from the power supply circuit 900410 or various signals input from the central processing unit (CPU) 9004000.
An nc signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R are generated and supplied to the display panel 900401.

In the transmission / reception circuit 900142, signals transmitted / received as radio waves are processed by the antenna 900248. Specifically, an isolator, a bandpass filter, and a VCO (Volt) are processed.
age Control Oscillator), LPF (Low Pass)
It may include a high frequency circuit such as a filter), a coupler, and a balun. Transmission / reception circuit 90
Of the signals transmitted and received in 0412, the signal including voice information is the central processing unit (CPU).
) It is sent to the voice processing circuit 90041 according to the instruction from 900408.

The signal including the audio information transmitted according to the instruction of the central processing unit (CPU) 900408 is demodulated into an audio signal in the audio processing circuit 90041 and sent to the speaker 900247. The audio signal sent from the microphone 900426 is modulated by the audio processing circuit 90041, and the transmission / reception circuit 9 is in accordance with an instruction from the central processing unit (CPU) 900408.
Sent to 00412.

Controller 900407, central processing unit (CPU) 900408, power supply circuit 90041
0, the voice processing circuit 90041, and the memory 9004000 can be implemented as the package of the present embodiment.

Of course, this embodiment is not limited to a television receiver, and is used for various purposes such as a personal computer monitor, an information display board at a railway station or an airport, an advertisement display board on a street, and the like, as a display medium having a particularly large area. Can be applied.

Next, a configuration example of the mobile phone will be described with reference to FIG. 119.

The display panel 900501 is detachably incorporated into the housing 900530. The shape or dimensions of the housing 900530 can be appropriately changed according to the size of the display panel 900501. The housing 900530 to which the display panel 900501 is fixed is fitted into the printed circuit board 900531 and assembled as a module.

The display panel 900501 is connected to the printed circuit board 900531 via the FPC900153. On the printed circuit board 900531, a speaker 90052 and a microphone 900
Signal processing circuit 900 including 533, transmission / reception circuit 900534, CPU, controller, etc.
535 and sensor 900541 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, (Including the function of measuring humidity, inclination, vibration, odor or infrared rays) is formed. Such a module is combined with the input means 900536 and the battery 900537 and housed in the housing 900538. The pixel part of the display panel 900501 is the housing 900539.
It is arranged so that it can be visually recognized from the opening window formed in.

In the display panel 900501, a pixel portion and a part of peripheral drive circuits (a drive circuit having a low operating frequency among a plurality of drive circuits) are integrally formed on a substrate by using transistors, and a part of the peripheral drive circuits (a plurality of drives) are integrally formed. A drive circuit with a high operating frequency) is formed on an IC chip, and the IC
The chip may be mounted on the display panel 900501 by COG (Chip On Glass). Alternatively, the IC chip may be connected to a glass substrate using a TAB (Tape Auto Bonding) or a printed circuit board. With such a configuration, it is possible to reduce the power consumption of the display device and prolong the usage time by charging the mobile phone once. The cost of mobile phones can be reduced.

The mobile phone shown in FIG. 119 has a function of displaying various information (still image, moving image, text image, etc.). It has a function to display a calendar, date, time, etc. on the display unit. It has a function to operate or edit the information displayed on the display unit. Various software (programs)
It has a function to control the processing by. It has a wireless communication function. It has a function to talk with other mobile phones, landlines, or voice communication devices by using the wireless communication function. It has a function to connect to various computer networks using a wireless communication function. It has a function to transmit or receive various data using a wireless communication function. It has a function to operate the vibrator in response to an incoming call, data reception, or an alarm. It has a function to generate a sound in response to an incoming call, data reception, or an alarm. The function of the mobile phone shown in FIG. 119 is not limited to this, and various functions can be provided.

The mobile phone shown in FIG. 120 includes operation switches 900604 and a microphone 90060.
Main body (A) 960601 equipped with 5 and the like, display panel (A) 960608, display panel (B) 960609, speaker 960606, sensor 900613 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance Light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared), input means 900162, etc. Body (B) 960602
And are connected so as to be openable and closable with hinge 900610. The display panel (A) 960608 and the display panel (B) 960609 are the main body (B) 960602 together with the circuit board 960607.
It is housed in the housing 900603. Display panel (A) 960608 and display panel (
B) The pixel portion of 900609 is arranged so as to be visible from the opening window formed in the housing 900603.

The display panel (A) 960608 and the display panel (B) 960609 are the mobile phone 90.
Specifications such as the number of pixels can be appropriately set according to the function of 0600. For example, the display panel (A) 960608 can be combined as the main screen, and the display panel (B) 960609 can be combined as the sub screen.

The mobile phone according to the present embodiment can be transformed into various modes depending on its function or use. For example, an image sensor may be incorporated in the hinge 900610 to form a mobile phone with a camera. Even if the operation switches 900604, the display panel (A) 960608, and the display panel (B) 960609 are housed in one housing, the above-mentioned effects can be obtained. Even if the configuration of the present embodiment is applied to an information display terminal provided with a plurality of display units, the same effect can be obtained.

The mobile phone shown in FIG. 120 has a function of displaying various information (still image, moving image, text image, etc.). It has a function to display a calendar, date, time, etc. on the display unit. It has a function to operate or edit the information displayed on the display unit. Various software (programs)
It has a function to control the processing by. It has a wireless communication function. It has a function to talk with other mobile phones, landlines, or voice communication devices by using the wireless communication function. It has a function to connect to various computer networks using a wireless communication function. It has a function to transmit or receive various data using a wireless communication function. It has a function to operate the vibrator in response to an incoming call, data reception, or an alarm. It has a function to generate a sound in response to an incoming call, data reception, or an alarm. The function of the mobile phone shown in FIG. 120 is not limited to this, and can have various functions.

The contents (may be a part) described in each figure of the present embodiment can be applied to various electronic devices. Specifically, it can be applied to the display unit of an electronic device. Such electronic devices include video cameras, digital cameras, goggle-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, and personal digital assistants (mobile computers, mobile phones, portable games, etc.). Machine or electronic book, etc.)
, An image playback device equipped with a recording medium (specifically, Digital Versaille D).
A device provided with a display capable of reproducing a recording medium such as isc (DVD) and displaying the image) and the like.

FIG. 121 (A) is a display, which is a housing 900711, a support base 900712, a display unit 900713, an input means 900114, and a sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetic). , Temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared) 9)
00715, microphone 9000176, speaker 9000177, operation keys 90071
8. Includes LED lamps 900719 and the like. The display shown in FIG. 121 (A) has a function of displaying various information (still image, moving image, text image, etc.) on the display unit. In addition, FIG.
The function of the display shown in 21 (A) is not limited to this, and can have various functions.

FIG. 121 (B) is a camera, which is a main body 900731, a display unit 900732, and an image receiving unit 900.
733, operation key 900734, external connection port 900735, shutter 900736
, Input means 900737, Sensor 900738 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation , Includes the ability to measure flow, humidity, gradient, vibration, odor or infrared),
Includes a microphone 900739, a speaker 900740, an LED lamp 900741 and the like. The camera shown in FIG. 121 (B) has a function of capturing a still image. It has a function to shoot moving images. It has a function to automatically correct captured images (still images, moving images). It has a function to save the captured image in a recording medium (external or built in a digital camera). It has a function to display the captured image on the display unit. The function of the camera shown in FIG. 121 (B) is not limited to this, and various functions can be provided.

FIG. 121 (C) shows a computer, which is a main body 900751, a housing 900752, and a display unit 9.
00753, keyboard 900754, external connection port 900755, pointing device 900756, input means 900757, sensor (force, displacement, position, velocity, acceleration,
Includes the ability to measure angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared. Includes 900758, microphone 900759, speaker 900760, LED lamp 900671, reader / writer 90000762, and the like. The computer shown in FIG. 121 (C) has a function of displaying various information (still image, moving image, text image, etc.) on the display unit. It has a function to control processing by various software (programs). It has communication functions such as wireless communication or wired communication. It has a function to connect to various computer networks using a communication function. It has a function to transmit or receive various data using a communication function. The functions of the computer shown in FIG. 121 (C) are not limited to this, and various functions can be provided.

FIG. 128 (A) shows a mobile computer, which is a main body 901411 and a display unit 901412.
, Switch 901413, operation key 901414, infrared port 901415, input means 901416, sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness 901417, microphone 901418, speaker 901419, LED lamp 901420, etc., including the function of measuring electric field, current, voltage, electric power, radiation, flow rate, humidity, inclination, vibration, odor or infrared rays. FIG. 12
The mobile computer shown in 8 (A) has a function of displaying various information (still image, moving image, text image, etc.) on the display unit. The display unit has a touch panel function. The display unit has a function to display a calendar, a date, a time, and the like. It has a function to control processing by various software (programs). It has a wireless communication function. It has a function to connect to various computer networks using a wireless communication function. It has a function to transmit or receive various data using a wireless communication function. The functions of the mobile computer shown in FIG. 128 (A) are not limited to this, and various functions can be provided.

FIG. 128 (B) shows a portable image playback device (for example, a DVD playback device) provided with a recording medium.
The main body 901431, the housing 901432, the display unit A901433, and the display unit B901.
434, recording medium (DVD, etc.) reading unit 901435, operation key 901436, speaker unit 901437, input means 901438, sensor 901439 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, Includes functions for measuring temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), microphone 901440, LED lamp 901441 and the like. The display unit A901433 can mainly display image information, and the display unit B901434 can mainly display character information.

FIG. 128 (C) shows a goggle type display, which is a main body 901451 and a display unit 90145.
2. Earphone 901453, support 901454, input means 901455, sensor (force,
Displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice,
Includes functions to measure time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays) 901456, microphone 901457, speaker 901458 and the like. The goggle-type display shown in FIG. 128 (C) has a function of displaying an image (still image, moving image, text image, etc.) acquired from the outside on the display unit. In addition, it should be noted.
The function of the goggle type display shown in FIG. 128 (C) is not limited to this, and can have various functions.

FIG. 129 (A) shows a portable gaming machine, which includes a housing 901511, a display unit 901512, a speaker unit 901513, an operation key 901514, a storage medium insertion unit 901515, and an input means 90.
1516, Sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity 901517, microphone 901518, LED lamp 901519 and the like. The portable gaming machine shown in FIG. 129 (A) has a function of reading out a program or data recorded on a recording medium and displaying it on a display unit. It has a function to share information by wirelessly communicating with other portable game machines. The functions of the portable game machine shown in FIG. 129 (A) are not limited to this, and various functions can be provided.

FIG. 129 (B) is a digital camera with a television image receiving function, which includes a main body 901531, a display unit 901532, operation keys 901533, a speaker 901534, and a shutter 901535.
, Image receiving unit 901536, antenna 901537, input means 901538, sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current , Includes functions to measure voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays) 901539, microphone 901540, LED lamp 901541 and the like. The digital camera with a television receiver shown in FIG. 129 (B) has a function of capturing a still image. It has a function to shoot moving images. It has a function to automatically correct the captured image. It has a function to acquire various information from the antenna. It has a function to save the captured image or the information acquired from the antenna. It has a function to display the captured image or the information acquired from the antenna on the display unit. The functions of the digital camera with a television receiver shown in FIG. 121 (H) are not limited to this, and various functions can be provided.

FIG. 130 is a portable gaming machine, which is a housing 901611, a first display unit 901612, a second display unit 901613, a speaker unit 901614, an operation key 901615, and a recording medium insertion unit 90.
1616, Input means 901617, Sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power,
Includes the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) 901
618, microphone 901619, LED lamp 901620 and the like are included. The portable gaming machine shown in FIG. 130 has a function of reading out a program or data recorded on a recording medium and displaying it on a display unit. It has a function to share information by wirelessly communicating with other portable game machines. The functions of the portable game machine shown in FIG. 130 are not limited to this, and can have various functions.

As shown in FIGS. 121 (A) to (C), 128 (A) to (C), 129 (A) to (C), and 130, the electronic device is for displaying some information. It is characterized by having a display unit. The electronic device can include a display unit having a wide viewing angle.

Next, an application example of the semiconductor device will be described.

FIG. 122 shows an example in which the semiconductor device is provided integrally with the building. FIG. 122 includes a housing 900810, a display unit 900811, a remote control device 900812 which is an operation unit, a speaker unit 900713 and the like. The semiconductor device is integrated with the building as a wall-mounted type, and can be installed without requiring a large space for installation.

FIG. 123 shows another example in which the semiconductor device is provided integrally with the building in the building.
The display panel 900901 is integrally attached to the unit bath 900902, so that the bather can view the display panel 900901. The display panel 900901 has a function of displaying information by being operated by a bather. It has a function that can be used as an advertisement or entertainment means.

The semiconductor device is not limited to the side wall of the unit bus 900902 shown in FIG. 123.
It can be installed in various places. For example, it may be integrated with a part of the mirror surface or the bathtub itself. At this time, the shape of the display panel 900901 may match the shape of the mirror surface or the bathtub.

FIG. 124 shows another example in which the semiconductor device is provided integrally with the building. The display panel 901002 is attached so as to be curved according to the curved surface of the columnar body 901001.
Here, the columnar body 901001 will be described as a utility pole.

The display panel 901002 shown in FIG. 124 is provided at a position higher than the human viewpoint.
By installing the display panel 901002 in a building that is repeatedly forested outdoors, such as a utility pole, it is possible to advertise to an unspecified number of viewers. Here, the display panel 90100
In No. 2, since it is easy to display the same image and to switch the image instantly by external control, extremely efficient information display and advertising effect can be expected. By providing the display panel 901002 with a self-luminous display element, it can be said that it is useful as a display medium with high visibility even at night. By installing it on a utility pole, it is easy to secure a power supply means for the display panel 901002. It can also be a means of quickly and accurately communicating information to disaster victims in the event of an emergency such as a disaster.

As the display panel 901002, for example, a display panel that displays an image by providing a switching element such as an organic transistor on a film-like substrate and driving the display element can be used.

In the present embodiment, a wall, a columnar body, and a unit bath are taken as examples of buildings, but the present embodiment is not limited to this, and semiconductor devices can be installed in various buildings.

Next, an example in which the semiconductor device is provided integrally with the moving body will be described.

FIG. 125 is a diagram showing an example in which a semiconductor device is provided integrally with an automobile. The display panel 901022 is integrally attached to the vehicle body 901101, and can display the operation of the vehicle body or information input from inside and outside the vehicle body on demand. It may have a navigation function.

The semiconductor device can be installed not only in the vehicle body 901101 shown in FIG. 125 but also in various places. For example, it may be integrated with a glass window, a door, a handle, a shift lever, a seat, a rearview mirror, or the like. At this time, the shape of the display panel 901022 may be matched to the shape of the one to be installed.

FIG. 126 is a diagram showing an example in which a semiconductor device is provided integrally with a train car.

FIG. 126 (a) is a diagram showing an example in which a display panel 901202 is provided on the glass of the door 901201 of a train vehicle. Compared to conventional paper advertisements, there is an advantage that the labor cost required for switching advertisements is not required. Since the display panel 901202 can instantly switch the image displayed on the display unit by a signal from the outside, for example, the image on the display panel is switched at each time zone when the customer base of train passengers changes. It is possible to expect a more effective advertising effect.

FIG. 126 (b) shows the glass window 901203 in addition to the glass of the train car door 901201.
, And an example showing an example in which the display panel 901202 is provided on the ceiling 901204.
As described above, since the semiconductor device can be easily installed in a place where it has been difficult to install in the past, an effective advertising effect can be obtained. Since the semiconductor device can instantly switch the image displayed on the display unit by the signal from the outside, the cost and time for switching the advertisement can be reduced, and more flexible advertisement operation and information transmission can be performed. It will be possible.

The semiconductor device can be installed not only in the door 901201, the glass window 901203, and the ceiling 901204 shown in FIG. 126, but also in various places. For example, it may be integrated with straps, seats, railings, floors, and the like. At this time, the shape of the display panel 901202 may be matched to the shape of the one to be installed.

FIG. 127 is a diagram showing an example in which a semiconductor device is provided integrally with a passenger airplane.

FIG. 127 (a) shows a display panel 90130 on the ceiling 901301 above the seat of a passenger airplane.
It is a figure which showed the shape at the time of use when 2 is provided. The display panel 901302 is
It is integrally attached to the ceiling 901301 via the hinge portion 901303, and the expansion and contraction of the hinge portion 901303 allows passengers to view the display panel 901302. The display panel 901302 has a function of displaying information by being operated by a passenger. It has a function that can be used as an advertisement or entertainment means. As shown in FIG. 127 (b), by bending the hinge portion and storing it in the ceiling 901301, safety at the time of takeoff and landing can be considered. In addition, it should be noted.
By turning on the display element of the display panel in an emergency, it can also be used as an information transmission means and a guide light.

The semiconductor device can be installed not only in the ceiling 901301 shown in FIG. 127 but also in various places. For example, it may be integrated with a seat, a seat table, an armrest, a window, or the like. A large display panel that can be viewed by a large number of people at the same time may be installed on the wall of the aircraft. At this time, the shape of the display panel 901302 may be matched to the shape of the one to be installed.

In the present embodiment, examples of moving bodies include train vehicle bodies, automobile bodies, and airplane bodies, but the present invention is not limited to these, and motorcycles, motorcycles (including automobiles, buses, etc.), and motorcycles.
It can be installed on various things such as trains (including monorails and railroads) and ships. Since the semiconductor device can instantly switch the display on the display panel inside the moving body by a signal from the outside, by installing the semiconductor device on the moving body, the moving body can be targeted to an unspecified number of customers. It can be used for advertisement display boards, information display boards in the event of a disaster, etc.

In addition, although it has been described using various figures in this embodiment, the contents described in each figure (
(May be part) applies, combines, and applies to the content (may be part) described in another figure.
Alternatively, it can be replaced freely. Further, in the figures described so far, more figures can be formed by combining different parts with respect to each part.

Similarly, the content (which may be a part) described in each figure of the present embodiment may be applied, combined, or replaced with respect to the content (which may be a part) described in the figure of another embodiment. Can be done freely. Further, in the figure of the present embodiment, more figures can be constructed by combining the parts of another embodiment with respect to each part.

In addition, in this embodiment, the contents (may be a part) described in other embodiments are improved as an example when they are embodied, an example when they are slightly deformed, and an example when a part is changed. An example of the case,
An example of the case described in detail, an example of the case of application, an example of related parts, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied, combined, or replaced with the present embodiments.

100 pixels 101 switch 102 switch 103 liquid crystal element 103 potential V
104 Liquid crystal element 105 Liquid crystal element 106 Capacitive element 107 Capacitive element 108 Wiring 109 Wiring 110 Wiring 111 Common electrode 150 pixels 151 Switch 152 Switch 153 Liquid crystal element 154 Liquid crystal element 155 Liquid crystal element 156 Capacitive element 157 Capacitive element 158 Wiring 159 Wiring 160 Wiring 161 Capacitance Element 200 pixel 201 switch 202 switch 203 switch 203 transistor 204 liquid crystal element 205 liquid crystal element 206 liquid crystal element 207 capacitive element 208 capacitive element 209 wiring 210 wiring 211 wiring 253 transistor 260 wiring 261 wiring 262 wiring 301 switch 302 switch 303 transistor 309 wiring 310 wiring 313 Wiring 353 Transistor 356 Liquid crystal element 359 Capacitive element 364 Wiring 400 Pixel 401 Switch 402 Switch 403 Liquid crystal element 404 Liquid crystal element 405 Liquid crystal element 406 Capacitive element 407 Capacitive element 408 Capacitive element 409 Capacitive element 410 Wiring 411 Wiring 421 Wiring 413 Wiring 414 Wiring 415 Wiring 416 Common electrode 417 Capacitive element 450 pixel 451 Switch 452 Switch 453 Liquid crystal element 454 Liquid crystal element 455 Liquid crystal element 456 Capacitive element 457 Capacitive element 458 Wiring 459 Wiring 460 Wiring 461 Common electrode 463 Capacitive line 465 Capacitive line 500 pixel 501 Switch 502 Switch 503 Liquid crystal element 504 Liquid crystal element 505 Liquid crystal element 506 Liquid crystal element 507 Capacitive element 508 Capacitive element 509 Capacitive element 510 Wiring 511 Wiring 512 Wiring 550 Pixel 551 Switch 552 Switch 555 Switch 554 Liquid crystal element 555 Liquid crystal element 556 Liquid crystal element 557 Liquid crystal element 558 Capacitive element 559 Capacitive element 560 Wiring 561 Wiring 562 Wiring 563 Wiring 565 Capacitive element 566 Capacitive element 57 Capacitive element 584 Capacitive element 600 pixel 601 Switch 602 Switch 603 Liquid crystal element 604 Liquid crystal element 605 Liquid crystal element 606 Pressure dividing element 607 Pressure dividing element 608 Wiring 609 Wiring 610 Wiring 650 Pixel 651 Switch 652 Switch 653 Liquid crystal element 654 Liquid crystal element 655 Liquid crystal element 656 Pressure dividing element 657 Pressure dividing element 658 Switch 659 Switch 660 Wiring 661 Wiring 661 Wiring 662 Wiring 700 Pixel 701 Switch 702 Switch 703 Liquid crystal element 704 Liquid crystal element 705 Liquid crystal element 706 Transistor 707 Transistor 708 Wiring 709 Wiring 710 Wiring 750 Pixel 751 Switch 752 Switch 753 Liquid crystal element 754 Liquid crystal element 755 Liquid crystal element 756 Transistor 757 Transistor 758 Wiring 759 Wiring 760 Element 763 Capacitive element 764 Capacitive element 800 pixel 801 switch 802 switch 803 transistor 803 liquid crystal element 804 transistor 804 liquid crystal element 805 liquid crystal element 806 liquid crystal element 807 liquid crystal element 808 wiring 809 wiring 810 wiring 81 wiring 850 pixel 851 switch 852 switch 851 liquid crystal element 854 Liquid crystal element 855 Liquid crystal element 856 Transistor 857 Transistor 858 Transistor 859 Wire 860 Wire 861 Capacitive element 900 pixel 901 Switch 902 Switch 903 Liquid crystal element 904 Liquid crystal element 905 Liquid crystal element 906 Liquid crystal element 907 Transistor 908 Transistor 909 Transistor 910 Wire 911 Wire 912 Wire 101N Switch 101P switch 102N switch 102P switch 105a liquid crystal element 105b liquid crystal element 151N switch 152N switch 1911 signal line drive circuit 1912 scanning line drive circuit 1913 pixel part 1914 pixel 201N switch 202N switch 211A wiring 251N switch 252N switch 301N switch 302N switch 401N switch 402N switch 451N Switch 452N Switch 501N Switch 502N Switch 551N Switch 552N Switch 601N Switch 602N Switch 651N Switch 652N Switch 701N Switch 702N Switch 751N Switch 752N Switch 801N Switch 802N Switch 851N Switch 852N Switch 901N Switch 902N Switch 107320 FPC
107321 IC chip 170100 Board 170101 Pixel part 170102 Pixel 170103 Scan line side input terminal 170104 Signal line side input terminal 170105 Scan line drive circuit 170106 Signal line drive circuit 170200 FPC
170201 IC chip 170300 Board 170301 Pixel part 170303 Signal line drive circuit 170310 Board 170320 FPC
170321 Sealing material 170401 IC chip 170302a Scanning line drive circuit 170302b Scanning line drive circuit 170501a IC chip 170501b IC chip 180100 Display device 180101 Pixel unit 180102 Pixel 180103 Signal line drive circuit 180104 Scanning line drive circuit 180701 Image 180702 Image 180703 Image 180704 Image 180705 Image 180711 Image 180712 Image 180713 Image 180714 Image 180715 Image 180716 Image 180717 Image 180721 Image 180722 Image 180723 Image 180724 Image 180725 Image 180801 Image 180802 Image 180803 Image 180804 Area 180805 Area 180806 Area 18081 Image 180812 Image 180816 Image 180818 180822 Image 180823 Image 180824 Area 180825 Area 180826 Area 180831 Image 180823 Image 180833 Image 180834 Area 180835 Area 180836 Area 180841 Area 180842 Point 180901 Image 180902 Image 180903 Image 180904 Area 180905 Area 180906 Area 18009 Vector 18009 Image 180913 Image 180914 Image 180915 Region 180916 Region 180917 Region 180918 Region 180919 Range 180920 Range 180921 Motion vector 180922 Displacement vector 180923 Displacement vector 181000 External image signal 181001 Horizontal sync signal 181002 Vertical sync signal 181003 Image signal 181004 Source start pulse 18100 Start pulse 181007 Gate clock 181008 Frequency control signal 181011 Control circuit 1810112 Source driver 181013 Gate driver 181014 Display area 181015 Image processing circuit 181016 Timing generation circuit 181020 Detection circuit 181021 First memory 181022 Second memory 181023 Third Memory 181023 Image signal 181024 Brightness control circuit 181025 High-speed processing circuit 181026 Memory 20101 Diffuse plate 20100 Light guide plate 20104 Reflector plate 20105 Lamp reflector 20106 Light source 20107 Liquid crystal panel 20102 Backlight unit 2022 Lamp reflector 20102 Cold cathode tube 20211 Backlight unit 20212 Lamp reflector 20213 Light emitting diode (LED)
20213W Light emitting diode 20221 Backlight unit 20222 Lamp reflector 20223 Light emitting diode (LED)
20224 Light emitting diode (LED)
20225 Light emitting diode (LED)
20231 Backlight unit 20232 Lamp reflector 20233 Light emitting diode (LED)
20234 Light emitting diode (LED)
20235 Light emitting diode (LED)
20300 Polarizing film 20301 Protective film 20302 Substrate film 20303 PVA polarizing film 20304 Substrate film 20305 Adhesive layer 20306 Detachable film 20401 Video signal 20402 Control circuit 20403 Signal line drive circuit 20404 Scanning line drive circuit 20405 Pixel unit 20406 Lighting means 20407 Power supply 20408 Drive Circuit section 20410 Scan line 20412 Signal line 20431 Shift register 20432 Latch 20433 Latch 20434 Level shifter 20435 Buffer 20441 Shift register 20442 Level shifter 20443 Buffer 20500 Backlight unit 20501 Diffuse plate 20502 Shading plate 20503 Lamp reflector 20504 Light source 20505 Liquid crystal panel 20510 Backlight unit 20511 Diffuse Plate 20512 Shading plate 20513 Lamp reflector 20514 Light source 20515 Liquid crystal panel 20514a Light source (R)
20514b Light source (G)
20514c Light source (B)
40100 pixel 40101 transistor 40102 liquid crystal element 40103 capacitive element 40104 wiring 40105 wiring 40106 wiring 40107 facing electrode 40110 pixel 40111 transistor 40112 liquid crystal element 40113 capacitive element 40114 wiring 40115 wiring 40116 wiring 40200 pixels (pixel 40200 pixel 40201 transistor 40202 liquid crystal element 40203 capacitive element 40203 Wiring 40205 Wiring 40206 Wiring 40207 Opposite electrode 40210 Pixel 40211 Transistor 40212 Liquid crystal element 40213 Capacitive element 40214 Wiring 40215 Wiring 40216 Wiring 40217 Opposite electrode 40300 Sub-pixel 40301 Transistor 40302 Liquid crystal element 40303 Capacitive element 40304 Wiring 40305 Wiring 40306 Wiring 40307 40311 Transistor 40312 Liquid crystal element 40313 Capacitive element 40315 Wiring 40316 Wiring 40317 Opposite electrode 40320 Pixels 50100 Liquid crystal layer 50101 Substrate 50102 Substrate 50103 Plate plate 50104 Plate plate 50105 Electrode 50106 Electrode 50200 Liquid crystal layer 50201 Substrate 50202 Substrate 50203 Plate plate 50204 Plate plate 50205 Electrode 50206 Electrode 50210 Liquid crystal layer 50221 Substrate 50212 Substrate 50213 Plate plate 50214 Plate plate 50215 Electrode 50216 Electrode 50300 Liquid crystal layer 50301 Substrate 50302 Substrate 50303 Plate plate 50304 Plate plate 50305 Electrode 50306 Electrode 50310 Liquid crystal layer 50311 Substrate 50312 Substrate 50313 Plate plate 50314 Plate plate 50315 Electrode 50316 Electrode 50400 Liquid crystal layer 50401 Substrate 50402 Substrate 50403 Plate plate 50404 Plate plate 50405 Electrode 50406 Electrode 50410 Liquid crystal layer 50411 Substrate 50412 Substrate 50413 Plate plate 50414 Plate plate 50415 Electrode 50416 Electrode 50417 Insulation film 50501 Pixel electrode 50503 Transistor 50611 Pixel electrode 50612 Pixel electrode 50631 Pixel electrode 50632 Pixel electrode 50641 Pixel electrode 50642 Pixel electrode 50701 Pixel electrode 50702 Pixel electrode 50711 Pixel electrode 50712 Pixel electrode 50731 Pixel electrode 50732 Pixel electrode 50741 Pixel electrode 50742 Pixel electrode 502117 Projection 502118 Projection 10101 Substrate 10102 Insulation film 10103 Conductive layer 10104 Insulation film 10105 Semiconductor layer 10106 Semiconductor layer 10107 Conductive layer 10108 Insulation film 10109 Conductive layer 10110 10112 Alignment film 10113 Conductive layer 10114 Light-shielding film 10115 Color filter 10116 Substrate 10117 Spacer 10118 Liquid crystal molecule 10201 Substrate 10202 Insulation film 10203 Conductive layer 10204 Insulation film 10205 Semiconductor layer 10206 Semiconductor layer 10207 Conductive layer 10208 Insulation film 10209 Conductive layer 10210 Alignment film 10212 Film 10213 Conductive layer 10214 Light-shielding film 10215 Color filter 10216 Substrate 10217 Spacer 10218 Liquid crystal molecule 10219 Orientation control protrusion 10231 Substrate 10232 Insulation film 10233 Conductive layer 10234 Insulation film 10235 Semiconductor layer 10236 Semiconductor layer 10237 Conductive layer 10238 Insulation film 10239 Conductive layer 10240 Orientation Film 10242 Alignment film 10243 Conductive layer 10244 Light-shielding film 10245 Color filter 10246 Substrate 10247 Spacer 10248 Liquid crystal molecule 10249 Part 10301 Substrate 10302 Insulation film 10303 Conductive layer 10304 Insulation film 10305 Semiconductor layer 10306 Semiconductor layer 10307 Conductive layer 10308 Insulation film 10309 Conductive layer 10310 Film 10312 Alignment film 10314 Light-shielding film 10315 Color filter 10316 Substrate 10317 Spacer 10318 Liquid crystal molecule 10331 Substrate 10332 Insulation film 10333 Conductive layer 10334 Insulation film 10335 Semiconductor layer 10336 Semiconductor layer 10337 Conductive layer 10338 Insulation film 10339 Conductive layer 10340 Alignment film 10342 Alignment film 10343 Conductive layer 10344 Light-shielding film 10345 Color filter 10346 Substrate 10347 Spacer 10348 Liquid crystal molecule 10349 Insulation film 10401 Scanning line 10402 Video signal line 10403 Capacitive line 10404 Transistor 10405 Pixel electrode 10406 Pixel capacity 10501 Scanning line 10502 Video signal line 10503 Capacitive line 10504 Transistor 10505 Pixel Electrode 105 06 Pixel capacity 10507 Orientation control protrusion 10511 Scanning line 10512 Video signal line 10513 Capacitive line 10514 Transistor 10515 Pixel electrode 10516 Pixel capacity 10517 Part 10601 Scanning line 10602 Video signal line 10603 Common electrode 10604 Transistor 10605 Pixel electrode 10611 Scan line 10612 Video signal line 10613 Common electrode 10614 Transistor 10615 Pixel electrode 106015 Common electrode 70101 Substrate 70102 Alignment film 70103 Roller 70104 Rubbing roller 70105 Sealing material 70106 Spacer 70107 Substrate 70108 Alignment film 70109 Liquid crystal 70110 Resin 70113 Liquid crystal injection port 70301 Substrate 70302 Alignment film 70303 Roller 70304 Roller 70305 Sealing material 70306 Spacer 70307 Substrate 70308 Alignment film 70309 Liquid crystal 80300 Pixel 80301 Switching transistor 80302 Driving transistor 80303 Capacitive element 80304 Light emitting element 80305 Signal line 80306 Scanning line 80307 Power supply line 80308 Common electrode 80309 Rectifying element 80400 Pixel 80401 Switching transistor 80402 Drive transistor 80403 Capacitive element 80404 Light emitting element 80405 Signal line 80406 Scanning line 80407 Power supply line 80408 Common electrode 80409 Rectifying element 80410 Scanning line 80500 Pixel 80501 Switching transistor 80502 Driving transistor 80503 Capacitive element 80504 Light emitting element 80505 Signal line 80506 Scanning line 80507 Power line 80508 Common electrode 80509 Erasing transistor 80510 Scanning line 80600 Driving transistor 80601 Switch 80602 Switch 80603 Switch 80604 Capacitive element 80605 Capacitive element 80611 Signal line 80612 Power supply line 80613 Scanning line 80614 Scanning line 80620 Light emitting element 80621 Common electrode 80 Transistor 80701 Switch 80702 Switch 80703 Switch 80704 Capacitive element 80711 Signal line 80712 Power line 80713 Scan line 80714 Scan line 80730 Light emitting element 80731 Common electrode 80734 Scan line 70101 Substrate 70102 Alignment film 70103 Roller 70104 Rubbing roller 70105 Sealing material 70106 Spacer 70107 Substrate 70108 Alignment film 70109 Liquid crystal 70110 Resin 70113 Liquid crystal injection port 70301 Substrate 70302 Alignment film 70303 Roller 70304 Rubbing roller 70305 Sealing material 70306 Spacer 70307 Substrate 70308 Alignment film 70309 Liquid crystal 80300 Switching transistor 80302 Driving transistor 80303 Capacitive element 80304 Light emitting element 80305 Signal line 80306 Scanning line 80307 Power supply line 80308 Common electrode 80309 Rectifying element 80400 Pixel 80401 Switching transistor 80402 Driving transistor 80403 Capacitive element 80404 Light emitting element 80405 Signal line 80406 Scanning line 80407 Power supply line 80408 Common electrode 80409 rectifying element 80410 Scanning line 80500 Pixel 80501 Switching transistor 80502 Driving transistor 80503 Capacitive element 80504 Light emitting element 80505 Signal line 80506 Scanning line 80507 Power supply line 80508 Common electrode 80509 Erasing transistor 80510 Scanning line 80600 Transistor 80601 Switch 80602 Switch 80603 Switch 80604 Capacitive element 80605 Capacitive element 80611 Signal line 80612 Power supply line 80613 Scan line 80614 Scan line 80620 Light emitting element 80621 Common electrode 80700 Drive transistor 80701 Switch 80702 Switch 80703 Switch 80704 Capacitive element 80711 Signal line 80712 80713 Scanning line 80714 Scanning line 80730 Light emitting element 80731 Common electrode 80734 Scanning line 60105 Transistor 60106 Wiring 60107 Wiring 60108 Transistor 60111 Wiring 60112 Opposite electrode 60113 Condenser 60115 Pixel electrode 60116 Partition 60117 Organic conductor film 60118 Organic thin film 60119 Substrate 60200 Wiring 60203 Wiring 60204 Wiring 60205 Transistor 60206 Transistor 60207 Transistor 60208 Pixel electrode 60211 Partition 60212 Organic conductor film 60213 Organic thin film 6021 4 Opposite electrode 60300 Substrate 60301 Wiring 60302 Wiring 60303 Wiring 60304 Wiring 60305 Transistor 60306 Transistor 60307 Transistor 60308 Transistor 60309 Pixel electrode 60311 Wiring 60321 Wiring 60321 Partition 60322 Organic conductor film 60323 Organic thin film 60324 Opposite electrode 190101 Electrode 190102 Electrode 190102 190104 Electrode transport region 190105 Mixing region 190106 Region 190107 Region 190108 Region 190109 Region 190260 Transport chamber 190261 Transport chamber 190262 Load chamber 190263 Unload chamber 190264 Intermediate treatment chamber 190265 Sealing treatment chamber 190266 Transport means 190267 Transport means 190268 Heat treatment chamber 190269 Processing Room 190270 Film Formation Processing Room 190273 Film Formation Room 190272 Plasma Processing Room 190273 Film Formation Processing Room 190274 Film Formation Processing Room 190276 Film Formation Processing Room 190380 Evaporation Source Holder 190381 Evaporation Source 190382 Distance Sensor 190383 Articulated Arm 190384 Material Supply Tube 190386 Substrate Stage 190387 Substrate chuck 190388 Mask chuck 190389 Substrate 190390 Shadow mask 190391 Top plate 190392 Bottom plate 190277a Gate valve 190381a Evaporation source 190381b Evaporation source 190381c Evaporation source 190385a Material supply source 190385b Material supply source 190385c Material supply source 120 Layer 120104 Insulation film 120105 Insulation film 120106 Insulation film 120200 Electrode layer 120201 Light emitting material 120202 Electrode light emitting layer 120203 Electrode layer 120204 Insulation film 120205 Insulation film 120206 Insulation film 130100 Rear projection type display device 130101 Screen panel 130102 Speaker 130104 Operation switches 130110 Housing 130111 Projector unit 130112 Mirror 130200 Front projection type display 130201 Projection optical system 130301 Light source unit 130302 Light source lamp 130303 Light source optical system 130304 Modulation unit 130305 Dycroic mirror 130306 Full reflection mirror 130308 Display panel 130309 Prism 130310 Projection optics 130400 Modulation unit 130401 Dycroic mirror 130402 Dycroic mirror 130403 Full reflection mirror 130404 Polarized beam splitter 130405 Polarized beam splitter 130406 Polarized beam splitter 130407 Reflective display panel 130411 Projection optics 130501 Dycroic mirror 130502 Dycroic mirror for red light 130504 Phase difference plate 130505 Color filter plate 130506 Micro lens array 130507 Display panel 130508 Display panel 130509 Display panel 130501 Projection optical system 900101 Display panel 900102 Pixel part 900103 Scan line drive circuit 900104 Signal line drive circuit 900111 Circuit board 900112 Control circuit 900113 Signal division circuit 900114 Connection wiring 900201 Tuner 900202 Video signal amplification circuit 900203 Video signal processing circuit 900205 Audio signal amplification circuit 900206 Audio signal processing circuit 900207 Speaker 900208 Control circuit 900209 Input unit 900212 Control circuit 900213 Signal division circuit 900301 Housing 900302 Display screen 900303 Speaker 900304 Operation switch 900305 Input means 900306 Sensor 900307 Microphone 900310 Charger 900123 Housing 900133 Display unit 900316 Operation key 900137 Speaker unit 900318 Input means 900319)
900320 Macrophone 900401 Display panel 900402 Printed circuit board 900403 Pixel part 900404 Scanning line drive circuit 900405 Scanning line drive circuit 900406 Signal line drive circuit 900407 Controller 9004000 Central processing unit (CPU)
900409 Memory 900410 Power supply circuit 200441 Audio processing circuit 900142 Transmission / reception circuit 900413 Flexible wiring board (FPC)
900144 Interface (I / F) section 900145 Antenna port 900416 VRAM
900147 DRAM
900418 Flash memory 900419 Interface (I / F) section 900420 Control signal generation circuit 900421 Decoder 900421 On the other hand, decoder 900422 Register 900423 Arithmetic circuit 900424 RAM
900425 Input means 900426 Microphone 900427 Speaker 900284 Antenna 900501 Display panel 900153 FPC
900530 Housing 90053 Printed circuit board 900523 Speaker 90053 Microphone 900534 Transmission / reception circuit 90055 Signal processing circuit 900566 Input means 900537 Battery 900538 Housing 900561 Sensor 900600 Mobile phone 900601 Main unit (A)
900602 Main body (B)
900603 Housing 960604 Operation switches 960605 Microphone 960606 Speaker 960607 Circuit board 960608 Display panel (A)
2006009 Display panel (B)
900610 Hinge 900611 Sensor 900162 Input means 900711 Housing 900172 Support stand 900713 Display unit 900174 Input means 900715)
900176 Microphone 900177 Speaker 900718 Operation key 900179 LED lamp 900731 Main body 900732 Display unit 900733 Display unit 900734 Operation key 900735 External connection port 900736 Shutter 900737 Input means 900378 Sensor 900739 Microphone 900740 Speaker 990371 LED lamp 900 External connection port 900756 Pointing device 900757 Input means 900758)
900759 Microphone 900760 Speaker 90000761 LED lamp 90000762 Reader / writer 900010 Housing 900911 Display unit 900812 Remote control device 900013 Speaker unit 900901 Display panel 900902 Unit bath 901001 Columnar body 901002 Display panel 901101 Body 901102 Display panel 901201 Door 901202 901301 Ceiling 901302 Display panel 901303 Hinge part 901411 Main body 901412 Display part 901413 Switch 901414 Operation key 901415 Infrared port 901416 Input means 901417)
901418 Microphone 901419 Speaker 901420 LED lamp 901431 Main body 901432 Housing 901433 Display unit A
901434 Display unit B
901435 unit 901436 Operation key 901437 Speaker unit 901438 Input means 901439)
901440 Microphone 901441 LED lamp 901451 Main unit 901452 Display unit 901453 Earphone 901454 Support unit 901455 Input means 901456)
901457 Microphone 901458 Speaker 901511 Housing 901512 Display unit 901513 Speaker unit 901514 Operation key 901515 Storage medium insertion unit 901516 Input means 901517)
901518 Microphone 901519 LED lamp 901531 Main unit 901532 Display unit 901533 Operation key 901534 Speaker 901535 Shutter 901536 Image receiving unit 901537 Antenna 901538 Input means 901539 Sensor 901540 Microphone 901541 LED lamp 901611 Housing 901612 Display unit 901613 Display unit 901613 Display unit 9016 Insertion part 901617 Input means 901618)
901619 Microphone 901620 LED lamp

Claims (4)

It has a first pixel and a second pixel that are arranged in the same column direction and are adjacent to each other.
The first pixel includes a first transistor, a second transistor, a third transistor, a first capacitive element, a second capacitive element, a third capacitive element, and a first liquid crystal. It has an element, a second liquid crystal element, a first scanning line, and a second scanning line.
The gate of the first transistor and the gate of the second transistor are electrically connected to the first scanning line.
One of the source and drain of the first transistor is electrically connected to the first terminal of the first liquid crystal element.
The first terminal of the first liquid crystal element is electrically connected to the first terminal of the first capacitance element.
The first terminal of the first capacitive element is electrically connected to one of the source or drain of the third transistor.
The other of the source or drain of the third transistor is electrically connected to the first terminal of the third capacitive element.
The gate of the third transistor is electrically connected to the second scanning line.
One of the source and drain of the second transistor is electrically connected to the first terminal of the second liquid crystal element.
The first terminal of the second liquid crystal element is electrically connected to the first terminal of the second capacitance element.
The second pixel includes a fourth transistor, a fifth transistor, a sixth transistor, a fourth capacitive element, a fifth capacitive element, a sixth capacitive element, and a third liquid crystal. It has an element, a fourth liquid crystal element, a third scanning line, and a fourth scanning line.
The gate of the fourth transistor and the gate of the fifth transistor are electrically connected to the third scanning line.
One of the source and drain of the fourth transistor is electrically connected to the first terminal of the third liquid crystal element.
The first terminal of the third liquid crystal element is electrically connected to the first terminal of the fourth capacitive element.
The first terminal of the fourth capacitive element is electrically connected to one of the source or drain of the sixth transistor.
The other of the source or drain of the sixth transistor is electrically connected to the first terminal of the sixth capacitive element.
The gate of the sixth transistor is electrically connected to the fourth scanning line.
One of the source and drain of the fifth transistor is electrically connected to the first terminal of the fourth liquid crystal element.
The first terminal of the fourth liquid crystal element is electrically connected to the first terminal of the fifth capacitance element.
The second terminal of the first capacitance element, the second terminal of the second capacitance element, the second terminal of the third capacitance element, the second terminal of the fourth capacitance element, the first. A transmissive liquid crystal display device in which the second terminal of the capacitance element 5 and the second terminal of the sixth capacitance element are electrically connected to a capacitance line. It has a first pixel and a second pixel arranged next to the first pixel.
The first pixel includes a first transistor, a second transistor, a third transistor, a first capacitive element, a second capacitive element, a third capacitive element, and a first liquid crystal. It has an element, a second liquid crystal element, a first scanning line, and a second scanning line.
The gate of the first transistor and the gate of the second transistor are electrically connected to the first scanning line.
One of the source and drain of the first transistor is electrically connected to the first terminal of the first liquid crystal element.
The first terminal of the first liquid crystal element is electrically connected to the first terminal of the first capacitance element.
The first terminal of the first capacitive element is electrically connected to one of the source or drain of the third transistor.
The other of the source or drain of the third transistor is electrically connected to the first terminal of the third capacitive element.
The gate of the third transistor is electrically connected to the second scanning line.
One of the source and drain of the second transistor is electrically connected to the first terminal of the second liquid crystal element.
The first terminal of the second liquid crystal element is electrically connected to the first terminal of the second capacitance element.
The second pixel includes a fourth transistor, a fifth transistor, a sixth transistor, a fourth capacitive element, a fifth capacitive element, a sixth capacitive element, and a third liquid crystal. It has an element, a fourth liquid crystal element, a third scanning line, and a fourth scanning line.
The gate of the fourth transistor and the gate of the fifth transistor are electrically connected to the third scanning line.
One of the source and drain of the fourth transistor is electrically connected to the first terminal of the third liquid crystal element.
The first terminal of the third liquid crystal element is electrically connected to the first terminal of the fourth capacitive element.
The first terminal of the fourth capacitive element is electrically connected to one of the source or drain of the sixth transistor.
The other of the source or drain of the sixth transistor is electrically connected to the first terminal of the sixth capacitive element.
The gate of the sixth transistor is electrically connected to the fourth scanning line.
One of the source and drain of the fifth transistor is electrically connected to the first terminal of the fourth liquid crystal element.
The first terminal of the fourth liquid crystal element is electrically connected to the first terminal of the fifth capacitance element.
The second terminal of the first capacitance element, the second terminal of the second capacitance element, the second terminal of the third capacitance element, the second terminal of the fourth capacitance element, the first. The second terminal of the capacitance element 5 and the second terminal of the sixth capacitance element are electrically connected to the capacitance line.
A transmissive liquid crystal display device in which the first pixel and the second pixel are arranged in a direction intersecting a direction in which the second scanning line extends. It has a first pixel and a second pixel that are arranged in the same column direction and are adjacent to each other.
The first pixel includes a first transistor, a second transistor, a third transistor, a first capacitive element, a second capacitive element, a third capacitive element, and a first liquid crystal. It has an element, a second liquid crystal element, a first scanning line, and a second scanning line.
The gate of the first transistor and the gate of the second transistor are electrically connected to the first scanning line.
One of the source and drain of the first transistor is electrically connected to the first terminal of the first liquid crystal element.
The first terminal of the first liquid crystal element is electrically connected to the first terminal of the first capacitance element.
The first terminal of the first capacitive element is electrically connected to one of the source or drain of the third transistor.
The other of the source or drain of the third transistor is electrically connected to the first terminal of the third capacitive element.
The gate of the third transistor is electrically connected to the second scanning line.
One of the source and drain of the second transistor is electrically connected to the first terminal of the second liquid crystal element.
The first terminal of the second liquid crystal element is electrically connected to the first terminal of the second capacitance element.
The second pixel includes a fourth transistor, a fifth transistor, a sixth transistor, a fourth capacitive element, a fifth capacitive element, a sixth capacitive element, and a third liquid crystal. It has an element, a fourth liquid crystal element, a third scanning line, and a fourth scanning line.
The gate of the fourth transistor and the gate of the fifth transistor are electrically connected to the third scanning line.
One of the source and drain of the fourth transistor is electrically connected to the first terminal of the third liquid crystal element.
The first terminal of the third liquid crystal element is electrically connected to the first terminal of the fourth capacitive element.
The first terminal of the fourth capacitive element is electrically connected to one of the source or drain of the sixth transistor.
The other of the source or drain of the sixth transistor is electrically connected to the first terminal of the sixth capacitive element.
The gate of the sixth transistor is electrically connected to the fourth scanning line.
One of the source and drain of the fifth transistor is electrically connected to the first terminal of the fourth liquid crystal element.
The first terminal of the fourth liquid crystal element is electrically connected to the first terminal of the fifth capacitance element.
The second terminal of the first capacitance element, the second terminal of the second capacitance element, the second terminal of the third capacitance element, the second terminal of the fourth capacitance element, the first. The second terminal of the capacitance element 5 and the second terminal of the sixth capacitance element are electrically connected to the capacitance line.
A transmissive liquid crystal display device in which the first transistor and the second transistor are turned on, and then the third transistor is turned on. It has a first pixel and a second pixel arranged next to the first pixel.
The first pixel includes a first transistor, a second transistor, a third transistor, a first capacitive element, a second capacitive element, a third capacitive element, and a first liquid crystal. It has an element, a second liquid crystal element, a first scanning line, and a second scanning line.
The gate of the first transistor and the gate of the second transistor are electrically connected to the first scanning line.
One of the source and drain of the first transistor is electrically connected to the first terminal of the first liquid crystal element.
The first terminal of the first liquid crystal element is electrically connected to the first terminal of the first capacitance element.
The first terminal of the first capacitive element is electrically connected to one of the source or drain of the third transistor.
The other of the source or drain of the third transistor is electrically connected to the first terminal of the third capacitive element.
The gate of the third transistor is electrically connected to the second scanning line.
One of the source and drain of the second transistor is electrically connected to the first terminal of the second liquid crystal element.
The first terminal of the second liquid crystal element is electrically connected to the first terminal of the second capacitance element.
The second pixel includes a fourth transistor, a fifth transistor, a sixth transistor, a fourth capacitive element, a fifth capacitive element, a sixth capacitive element, and a third liquid crystal. It has an element, a fourth liquid crystal element, a third scanning line, and a fourth scanning line.
The gate of the fourth transistor and the gate of the fifth transistor are electrically connected to the third scanning line.
One of the source and drain of the fourth transistor is electrically connected to the first terminal of the third liquid crystal element.
The first terminal of the third liquid crystal element is electrically connected to the first terminal of the fourth capacitive element.
The first terminal of the fourth capacitive element is electrically connected to one of the source or drain of the sixth transistor.
The other of the source or drain of the sixth transistor is electrically connected to the first terminal of the sixth capacitive element.
The gate of the sixth transistor is electrically connected to the fourth scanning line.
One of the source and drain of the fifth transistor is electrically connected to the first terminal of the fourth liquid crystal element.
The first terminal of the fourth liquid crystal element is electrically connected to the first terminal of the fifth capacitance element.
The second terminal of the first capacitance element, the second terminal of the second capacitance element, the second terminal of the third capacitance element, the second terminal of the fourth capacitance element, the first. The second terminal of the capacitance element 5 and the second terminal of the sixth capacitance element are electrically connected to the capacitance line.
The first pixel and the second pixel are arranged in a direction intersecting the direction in which the second scanning line extends.
A transmissive liquid crystal display device in which the first transistor and the second transistor are turned on, and then the third transistor is turned on.

Images