JP6541839B2 - Display device - Google Patents

Description

The present invention relates to an object, a method or a method of producing an object. In particular, the present invention relates to a display device or a semiconductor device. In particular, it relates to a display device. In particular, the present invention relates to an active matrix liquid crystal display device.

In recent years, development of liquid crystal display devices and EL display devices has rapidly progressed as display devices. In particular, the spread of liquid crystal display devices is remarkable. Liquid crystal display devices are required to have high brightness, high contrast, high-speed response, wide viewing angle, and the like. Further, reduction in power consumption, weight reduction, and miniaturization are also important issues in liquid crystal display devices mounted in portable electronic devices.

Various techniques have been developed to widen the viewing angle of liquid crystal display devices. As a technique for expanding the viewing angle, for example, MVA (Multi Vertical Domain), hereinafter M
It is called VA. ) PVA (Pattered Vertical Alignmen)
t. Hereinafter, it is called PVA. ) And CPA (Continuous Pinwheel
Alignment) method. Although the viewing angle was expanded more than before by such a technique, it was insufficient. Therefore, by dividing one pixel into two sub-pixels, the alignment state of the liquid crystal is made different, and apparently the tilt angles of the liquid crystal molecules are averaged and an illusion such that a uniform display can be obtained from any direction. Technology has been developed to improve the viewing angle characteristics (e.g., Patent Document 1).

Unexamined-Japanese-Patent No. 2006-276582

In a liquid crystal display device, viewing angle characteristics can be improved by providing subpixels in pixels and providing a plurality of alignment states in the pixels. However, the viewing angle characteristics are still not sufficient, and it may be possible to improve the viewing angle characteristics by adding further sub-pixels.

However, simply increasing the number of sub-pixels causes disadvantages such as a decrease in aperture ratio and an increase in drive circuits, which not only causes an increase in manufacturing cost but also has an adverse effect in that the performance itself as a display device decreases. . Specifically, when the aperture ratio decreases, the brightness and contrast decrease, and power consumption increases. Alternatively, the layout density of the pixels is increased, the manufacturing yield is reduced, and the cost is increased. Alternatively, as the number of subpixels increases, the number of image signals to be input also increases. Therefore, the number of connections between the glass substrate and the external drive circuit is increased. As a result, the reliability is lowered due to poor contact and the like.

An object of the present invention is to provide a display device having excellent viewing angle characteristics while maintaining the performance as the display device. Another object of the present invention is to provide a highly reliable display device. Another object of the present invention is to provide a display device with high contrast. Alternatively, an object of the present invention is to provide a lightweight display device. Alternatively, an object of the present invention is to provide a display device with a small size. Alternatively, an object of the present invention is to provide a display device with high luminance. Another object of the present invention is to provide a display device with low power consumption. Alternatively, an object of the present invention is to provide a display device with a high aperture ratio. Alternatively, an object of the present invention is to provide a display device with low manufacturing cost.

One aspect of the present invention is a liquid crystal display device which has three or more liquid crystal elements in one pixel and different voltage values applied to the liquid crystal elements. In order to make the voltage applied to each liquid crystal element different, an element for dividing the applied voltage is disposed. Alternatively, an element that converts a current into a voltage or an element that converts a voltage into a current is provided. For example, a capacitor, a resistor, a nonlinear element, a switch, a transistor, a diode-connected transistor, a diode (PIN type, PN type, Schottky type, MIM type, MIS type, etc.), an inductor element, etc. To do.

Note that various types of switches can be used as the switch. Examples include electrical switches and mechanical switches. In other words, anything that can control the flow of current can be used.
It is not limited to a specific one. For example, as a switch, a transistor (eg, a bipolar transistor, a MOS transistor, etc.), a diode (eg, a PN diode, PI)
N diode, Schottky diode, MIM (Metal Insulator M)
etal) diode, MIS (Metal Insulator Semiconductor)
ctor) a diode, a diode-connected transistor, etc.), a thyristor, etc. can be used. Alternatively, a logic circuit combining these can be used as a switch.

An example of a mechanical switch is a switch using MEMS (micro-electro-mechanical system) technology, such as a digital micro mirror device (DMD). The switch has a mechanically movable electrode, and the movement of the electrode operates to control connection and disconnection.

When a transistor is used as a switch, the transistor operates as a mere switch, and thus the polarity (conductivity type) of the transistor is not particularly limited. However, in order to suppress the off current, it is preferable to use a transistor with a smaller off current. As a transistor having a small off current, there are a transistor having an LDD region, a transistor having a multi gate structure, and the like. Alternatively, an N-channel transistor is preferably used in the case where the potential of the source terminal of the transistor operated as a switch is close to the potential of the low potential power supply (Vss, GND, 0 V, etc.). On the other hand, it is desirable to use a P-channel type transistor when operating with the potential of the source terminal close to the potential of the high potential side power supply (Vdd or the like). This is because, in an N-channel transistor, when the source terminal operates near the potential of the low potential power supply, in a P-channel transistor, when the source terminal operates near the potential of the high power supply, the gate and source Because the absolute value of the voltage between them can be increased, it is easy to operate as a switch. The reason is that the magnitude of the output voltage is not reduced because the source follower operation is less likely to occur.

Note that CMO can be formed using both N-channel and P-channel transistors.
An S-type switch may be used as a switch. In the case of a CMOS switch, when either a P-channel transistor or an N-channel transistor is turned on, a current flows, so that the switch can easily function. For example, even when the voltage of the input signal to the switch is high or low, the voltage can be output appropriately. Furthermore, since the voltage amplitude value of the signal for turning on or off the switch can be reduced, power consumption can also be reduced.

Note that in the case of using a transistor as a switch, the switch includes an input terminal (one of a source terminal or a drain terminal) and an output terminal (the other of the source terminal or the drain terminal),
And a terminal (gate terminal) for controlling conduction. On the other hand, when a diode is used as a switch, the switch may not have a terminal for controlling conduction. Therefore, when a diode is used as a switch rather than a transistor, the number of wirings for controlling terminals can be reduced.

In the case where it is explicitly stated that A and B are connected, the case where A and B are electrically connected and the case where A and B are functionally connected , A and B are directly connected. Here, A and B each denote an object (eg, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, or the like). Accordingly, the present invention is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or the sentence, and includes other than the connection relationship shown in the figure or the sentence.

For example, in the case where A and B are electrically connected, an element (for example, a switch, a transistor, a capacitor, an inductor, a resistor, a diode, or the like) which enables electrical connection between A and B is , And A and B may be disposed one or more. Alternatively, a circuit (for example, a logic circuit (for example, an inverter, a NAND circuit, a NOR circuit, or the like) that enables functional connection between A and B as if A and B are functionally connected, a signal conversion circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit etc.), potential level conversion circuit (power supply circuit (boost circuit, step down circuit etc.), level shifter circuit etc. to change signal potential level), voltage source, current source, switching circuit , Amplification circuits (circuits capable of increasing the signal amplitude or current amount, etc., operational amplifiers, differential amplification circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, storage circuits, control circuits etc. 1 or more may be arrange | positioned. Alternatively, when A and B are directly connected, A and B may be directly connected without sandwiching another element or another circuit between A and B.

In the case where it is explicitly stated that A and B are directly connected, when A and B are directly connected (that is, another element or another circuit between A and B) And A and B are electrically connected (that is, A and B are connected via another element or another circuit). And (if applicable).

In the case where it is explicitly stated that A and B are electrically connected, when A and B are electrically connected (that is, another element between A and B) And when A and B are functionally connected (that is, functionally connected between A and B with another circuit). And when A and B are directly connected (if
That is, the case where A and B are connected without sandwiching another element or another circuit) is included. That is, when explicitly described as being electrically connected, it is assumed that it is the same as the case where only being connected is explicitly described.

Display Device Note that a display element, a display device which is a device having a display element, a light-emitting element, and a light-emitting device which is a device having a light-emitting element can have various modes and can have various elements. For example, as a display element, a display device, a light emitting element or a light emitting device, an EL element (an EL element containing an organic substance and an inorganic substance, an organic EL element, an inorganic EL element), an electron emitting element, a liquid crystal element,
Electronic ink, electrophoresis element, grating light valve (GLV), plasma display (PDP), digital micro mirror device (DMD), piezoelectric ceramic display, carbon nanotube, etc., contrast, brightness, reflectance, etc. by electro-magnetic action A display medium in which the transmittance or the like changes can be used. Note that an EL display is a display using an EL element, and a field emission display (FED) or an SED flat display (SED: Surface) as a display using an electron emitting element.
Liquid crystal display (transmission liquid crystal display, semi-transmission liquid crystal display, reflection liquid crystal display, direct view liquid crystal display, projection liquid crystal display) as a display device using liquid crystal elements such as -conduction electron-emitter display), electronic ink There is an electronic paper as a display device using an electrophoretic element.

Note that an EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. In addition, as the EL layer, one utilizing light emission (fluorescence) from singlet excitons,
One using light emission (phosphorescence) from triplet excitons, one using light emission (fluorescence) from singlet excitons and one using light emission (phosphorescence) from triplet excitons , Those formed by organic matter, those formed by inorganic matter, those including those formed by organic matter and those formed by inorganic matter, high molecular material, low molecular material, high molecular material A material including a molecule material can be used. However, it is not limited to this, E
Various elements can be used as the L element.

Note that an electron emitting element is an element that draws a electron by concentrating a high electric field on a sharp cathode.
For example, as an electron-emitting device, Spindt type, carbon nanotube (CNT) type, metal
Insulator-MIM (Metal-Insulator-Metal) type laminated, metal-insulator-semiconductor laminated MIS (Metal-Insulator-Semico)
nductor type, MOS type, silicon type, thin film diode type, diamond type, surface conduction emitter SCD type, orde type, diamond type, surface conduction emitter SCD type, metal
A thin film type such as insulator-semiconductor-metal type, HEED type, EL type, porous silicon type, surface conduction (SED) type or the like can be used. However, the present invention is not limited to this, and various electron-emitting devices can be used.

Note that a liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal, and includes a pair of electrodes and liquid crystal. In addition, the optical modulation action of the liquid crystal is
It is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field or an oblique electric field). As liquid crystal elements, nematic liquid crystal, cholesteric liquid crystal, smectic liquid crystal, discotic liquid crystal, thermotropic liquid crystal, lyotropic liquid crystal, lyotropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, main chain Type liquid crystal, side chain type polymer liquid crystal, plasma addressed liquid crystal (PDLC), banana type liquid crystal, TN (Twisted
Nematic) mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe)
Field Switching mode, MVA (Multi-domain Ve)
rtical Alignment) mode, PVA (Patterned Verti)
cal Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetrically aligned Micro-c)
ell) mode, OCB (Optical Compensated Birefrin
Gence) mode, ECB (Electrically Controlled Bi)
reference mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (AntiFerroelectric Liqu
id Crystal) mode, PDLC (Polymer Dispersed Li
A quid crystal mode, a guest host mode, etc. can be used. However, without limitation thereto, various liquid crystal elements can be used.

In addition, as an electronic paper, what is displayed by molecules such as optical anisotropy and dye molecule orientation, those displayed by particles such as electrophoresis, particle movement, particle rotation, phase change, one end of a film What is displayed when moving, what is displayed by color development / phase change of molecules, what is displayed by light absorption of molecules, or what is displayed when light emits when electrons and holes combine . For example, as electronic paper, microcapsule type electrophoresis, horizontal movement type electrophoresis, vertical movement type electrophoresis, spherical twist ball, magnetic twist ball, cylindrical twist ball type, charged toner, electronic powder fluid, magnetophoretic type, magnetic thermosensitive Formula, electrowetting, light scattering (transparent white turbidity), cholesteric liquid crystal / photoconductive layer, cholesteric liquid crystal, bistable nematic liquid crystal, ferroelectric liquid crystal, dichroic dye / liquid crystal dispersion type, movable film, leuco dye extinguishing Color, photochromic, electrochromic, electrodeposition, flexible organic EL and the like can be used. However, the present invention is not limited to this, and various electronic papers can be used. Here, by using microcapsule electrophoresis, it is possible to solve the aggregation and precipitation of electrophoretic particles, which is a drawback of the electrophoresis system. The electronic powder fluid has merits such as high-speed response, high reflectance, wide viewing angle, low power consumption, and memory performance.

In the plasma display, a rare gas is sealed by facing a substrate on which electrodes are formed on the surface and a substrate on which electrodes and minute grooves are formed on the surface and a phosphor layer is formed in the grooves at narrow intervals. It has a structure. Note that display can be performed by generating ultraviolet light by applying a voltage between the electrodes and lighting the phosphor. As plasma display, D
It may be a C-type PDP or an AC-type PDP. Here, as a plasma display panel,
An address display (SDS) drive that divides an subframe into a reset period, an address period, and a sustain period.
parated) drive, CLEAR (Low Energy Address and
Reduction of False Contour Sequence) driven, A
LIS (Alternate Lighting of Surfaces) method, TE
It is possible to use RES (Technology of Reciprocal Susfainer) drive or the like. However, the present invention is not limited to this, and various plasma displays can be used.

Note that display devices that require a light source, for example, liquid crystal displays (transmissive liquid crystal display, semi-transmissive liquid crystal display, reflective liquid crystal display, direct view liquid crystal display, projection liquid crystal display), grating light valve (GLV) As a light source for a display device or a display device using a digital micro mirror device (DMD), electroluminescence, a cold cathode tube, a hot cathode tube, an LED, a laser light source, a mercury lamp, or the like can be used. However, the light source is not limited to this, and various light sources can be used.

Types of Transistors Note that various types of transistors can be used as the transistors. Thus, the type of transistor used is not limited. For example, amorphous silicon, polycrystalline silicon,
A thin film transistor (TFT) or the like having a non-single crystal semiconductor film typified by microcrystalline (also referred to as microcrystalline or semi-amorphous) silicon can be used. There are various advantages when using a TFT. For example, since manufacturing can be performed at a lower temperature than in the case of single crystal silicon, manufacturing cost can be reduced or the manufacturing apparatus can be enlarged. Since the manufacturing apparatus can be enlarged, it can be manufactured on a large substrate. Therefore, a large number of display devices can be manufactured at the same time, so manufacturing can be performed at low cost. Furthermore, since the manufacturing temperature is low, a substrate with low heat resistance can be used. Therefore, the transistor can be manufactured on a transparent substrate. And
The transmission of light at the display element can be controlled using a transistor on a transparent substrate. Alternatively, since the thickness of the transistor is thin, part of a film included in the transistor can transmit light. Therefore, the aperture ratio can be improved.

Note that by using a catalyst (such as nickel) when polycrystalline silicon is manufactured, crystallinity can be further improved, and a transistor with excellent electric characteristics can be manufactured. As a result, gate driver circuits (scanning line driving circuits) and source driver circuits (signal line driving circuits)
And a signal processing circuit (a signal generation circuit, a gamma correction circuit, a DA conversion circuit, etc.) can be integrally formed on the substrate.

Note that by using a catalyst (eg, nickel) when microcrystalline silicon is manufactured, crystallinity can be further improved, and a transistor with excellent electric characteristics can be manufactured. At this time, crystallinity can be improved only by heat treatment without performing laser irradiation. As a result, the gate driver circuit (scanning line driver circuit) and part of the source driver circuit (analog switch or the like) can be integrally formed on the substrate. Furthermore, in the case where laser irradiation is not performed for crystallization, unevenness in crystallinity of silicon can be suppressed. Therefore, a beautiful image can be displayed.

However, polycrystalline silicon or microcrystalline silicon can be manufactured without using a catalyst (such as nickel).

In addition, although it is desirable to carry out with the whole panel to improve the crystallinity of a silicon | silicone to a polycrystal or a microcrystal etc., it is not limited to it. The crystallinity of silicon may be improved only in a partial region of the panel. It is possible to selectively improve the crystallinity by selectively irradiating a laser beam or the like. For example, the laser light may be irradiated only to the peripheral circuit area which is an area other than the pixel. Alternatively, laser light may be emitted only to regions such as a gate driver circuit and a source driver circuit. Or part of the source driver circuit (
For example, laser light may be emitted only in the area of the analog switch. As a result, the crystallization of silicon can be improved only in the area where the circuit needs to be operated at high speed. Since the pixel region is not required to operate at high speed, the pixel circuit can be operated without any problem even if the crystallinity is not improved. Because there are fewer regions to improve crystallinity,
The manufacturing process can also be shortened, the throughput can be improved, and the manufacturing cost can be reduced. The manufacturing cost can be reduced because the number of manufacturing apparatuses required can be reduced.

Alternatively, the transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. Accordingly, it is possible to manufacture a transistor with a small size, a small variation in characteristics, size, shape, and the like, a high current supply capability. When these transistors are used, power consumption of the circuit can be reduced or integration of the circuit can be increased.

Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO
A transistor having a compound semiconductor or an oxide semiconductor such as, or a thin film transistor in which the compound semiconductor or the oxide semiconductor is thinned can be used. By these, the manufacturing temperature can be lowered and, for example, the transistor can be manufactured at room temperature. As a result, the transistor can be formed directly on a substrate with low heat resistance, such as a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors can be used not only for the channel portion of the transistor but also for other uses.
For example, these compound semiconductors or oxide semiconductors can be used as a resistor, a pixel electrode, and a transparent electrode. Furthermore, since they can be deposited or formed at the same time as transistors, cost can be reduced.

Alternatively, a transistor or the like formed using an inkjet method or a printing method can be used. They can be manufactured at room temperature, manufactured at low vacuum, or manufactured on a large substrate. Since the manufacturing can be performed without using a mask (reticle), the layout of the transistor can be easily changed. Furthermore, there is no need to use a resist.
Material costs can be reduced and the number of processes can be reduced. Furthermore, since the film is applied only to the necessary portions, the material is not wasted and the cost can be reduced compared to the manufacturing method in which the film is formed on the entire surface and then etched.

Alternatively, a transistor or the like including an organic semiconductor or a carbon nanotube can be used. Thus, the transistor can be formed over a bendable substrate. Therefore, it can withstand shocks.

Furthermore, transistors with various structures can be used. For example, a MOS transistor, a junction transistor, a bipolar transistor or the like can be used as the transistor. By using a MOS transistor, the size of the transistor can be reduced. Therefore, a large number of transistors can be mounted. A large current can flow by using a bipolar transistor. Thus, the circuit can be operated at high speed.

Note that MOS transistors, bipolar transistors, and the like may be mixed on one substrate. Thus, low power consumption, downsizing, high speed operation, and the like can be realized.

  Other various transistors can be used.

Note that the transistor can be formed using various substrates. The type of substrate is not limited to a specific one. As the substrate, for example, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic fiber (Nylon, polyurethane, polyester) or regenerated fiber (including acetate, cupra, rayon, regenerated polyester) etc., leather substrate, rubber substrate, stainless steel still substrate, substrate having stainless steel foil etc. can be used . Alternatively, skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. Alternatively, one substrate may be used to form a transistor, and then, the transistor may be transposed to another substrate and the transistor may be disposed on another substrate. As a substrate on which a transistor is transferred, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, linen), Use synthetic fiber (nylon, polyurethane, polyester) or regenerated fiber (including acetate, cupra, rayon, regenerated polyester) etc., leather substrate, rubber substrate, stainless steel still substrate, stainless steel foil, etc. Can. Alternatively, skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. Alternatively, a transistor may be formed using a certain substrate, and the substrate may be polished and thinned. As a substrate to be polished, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic fiber (Including nylon, polyurethane, polyester) or regenerated fiber (acetate, cupra, rayon, regenerated polyester etc.), leather substrate, rubber substrate,
A stainless steel still substrate, a substrate having a stainless steel still foil, or the like can be used. Alternatively, skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. By using these substrates, formation of a transistor with good characteristics, formation of a transistor with low power consumption, manufacture of a device that is not easily broken, provision of heat resistance, weight reduction, or thickness reduction can be achieved.

Note that the configuration of the transistor can take various forms. It is not limited to a specific configuration. For example, a multi-gate structure having two or more gate electrodes may be used. In the multi-gate structure, the channel regions are connected in series, so that a plurality of transistors are connected in series. With the multi-gate structure, the off current can be reduced and the reliability can be improved by improving the withstand voltage of the transistor. Alternatively, due to the multi-gate structure, when operating in the saturation region, the drain-source current does not change so much even when the drain-source voltage changes, and the slope of the voltage-current characteristics becomes flat. it can. By utilizing the flat slope of the voltage / current characteristics, it is possible to realize an ideal current source circuit or an active load having a very high resistance value. As a result, a differential circuit or current mirror circuit with good characteristics can be realized. As another example, gate electrodes may be disposed above and below the channel. With the structure in which the gate electrodes are disposed above and below the channel, the channel region is increased, and therefore, the S value can be reduced by increasing the current value or forming a depletion layer easily. When gate electrodes are disposed above and below the channel, a plurality of transistors are connected in parallel.

Alternatively, the gate electrode may be disposed above the channel region, or the gate electrode may be disposed below the channel region. Alternatively, a positive stagger structure or a reverse stagger structure may be used, the channel region may be divided into a plurality of regions, the channel regions may be connected in parallel, or the channel regions may be connected in series. Good. Alternatively, the source electrode or the drain electrode may overlap with the channel region (or a portion thereof). With a structure in which the source electrode and the drain electrode overlap with the channel region (or a part thereof), charge can be prevented from being accumulated in part of the channel region to prevent the operation from becoming unstable. Alternatively, an LDD region may be provided. By providing the LDD region, the off current can be reduced or the reliability can be improved by improving the withstand voltage of the transistor. Alternatively, by providing the LDD region, when operating in the saturation region, the drain-source current does not change so much even when the drain-source voltage changes, and the slope of the voltage-current characteristics becomes flat. be able to.

Note that various types of transistors can be used and the transistors can be formed using various substrates. Therefore, all of the circuits necessary for achieving a predetermined function may be formed on the same substrate. For example, all the circuits necessary for achieving a predetermined function may be formed using a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, and are formed using various substrates. May be Since all the circuits necessary for realizing a predetermined function are formed using the same substrate, the cost can be reduced by reducing the number of parts, or the reliability can be improved by reducing the number of connections with circuit parts. Can be Alternatively, a part of the circuit necessary to realize a predetermined function is formed on one substrate, and another part of the circuit necessary to realize a predetermined function is formed on another substrate. It may be That is, all the circuits necessary to realize a predetermined function may not be formed using the same substrate. For example, part of a circuit necessary for achieving a predetermined function is formed using a transistor on a glass substrate, and another part of the circuit necessary for achieving a predetermined function is a single crystal substrate An IC chip formed of a transistor formed using a single crystal substrate may be connected to a glass substrate by COG (Chip On Glass), and the IC chip may be disposed over the glass substrate. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed substrate. Thus, by forming a part of the circuit on the same substrate, it is possible to reduce the cost by reducing the number of components or to improve the reliability by reducing the number of connections with circuit components. Alternatively, circuits with high drive voltage and high drive frequency consume a large amount of power, so circuits in such portions are not formed on the same substrate, but instead, for example, on a single crystal substrate. By forming a circuit of that portion and using an IC chip configured with that circuit, it is possible to prevent an increase in power consumption.

Note that one pixel represents one element capable of controlling the brightness. Therefore, as an example, one pixel represents one color element, and one color element represents brightness. Therefore, in this case, in the case of a color display device consisting of R (red) G (green) B (blue) color elements, the minimum unit of the image is: R pixels, G pixels and B pixels. It shall be composed of three pixels. The color elements are not limited to three colors, and three or more colors may be used, or colors other than RGB may be used. For example, white may be added to make RGBW (W is white). Alternatively, for example, one or more colors of yellow, cyan, magenta, emerald green, vermilion, etc. may be added to RGB. Alternatively, for example, a color similar to at least one of RGB may be added to RGB. For example, R, G, B1 and B2 may be used. Both B1 and B2 are blue but have slightly different frequencies. Similarly, R1, R2, G, and B may be used. By using such color elements, it is possible to perform display closer to the real thing. Power consumption can be reduced by using such a color element. As another example, when brightness is controlled using a plurality of regions for one color element, one region may be one pixel. Therefore, as one example, when performing area gradation or sub-pixels
When there are sub-pixels, there are multiple areas for controlling the brightness per color element,
Although the gradation is expressed as a whole, it is also possible to use one pixel as an area for controlling the brightness. Therefore, in this case, one color element is composed of a plurality of pixels. Alternatively, even if there are multiple regions for controlling brightness in one color element, put them together,
One color element may be one pixel. Therefore, in this case, one color element is composed of one pixel. Alternatively, when brightness is controlled using a plurality of areas for one color element, the size of the area contributing to display may differ depending on the pixel. Alternatively, in a plurality of brightness control areas for one color element, signals supplied to each may be slightly different to widen the viewing angle. In other words, 1
The potentials of pixel electrodes included in each of a plurality of regions of one color element may be different from one another. As a result, the voltage applied to the liquid crystal molecules differs depending on each pixel electrode. Therefore, the viewing angle can be widened.

In the case where one pixel (for three colors) is explicitly described, it is assumed that three pixels of R, G, and B are considered as one pixel. In the case of explicitly describing one pixel (one color), when there are a plurality of regions for one color element, it is assumed that they are collectively considered as one pixel.

The pixels may be arranged (arranged) in a matrix. Here, that the pixels are arranged (arranged) in a matrix includes cases where the pixels are arranged in a straight line or in a jagged line in the vertical or horizontal direction. Therefore, for example, when performing full-color display with three color elements (for example, RGB), the case where stripes are arranged or the case where dots of three color elements are arranged delta is also included. Furthermore, it includes the case where it is arranged in Bayer. The color elements are not limited to three colors, and may be more than three colors, for example, RGBW (W is white), or one obtained by adding one or more colors of yellow, cyan, magenta, etc. to RGB. The size of the display area may be different for each dot of the color element. Accordingly, power consumption can be reduced or the lifetime of the display element can be lengthened.

Note that an active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used.

In the active matrix method, not only transistors but also various active elements (active elements, non-linear elements) can be used as active elements (active elements, non-linear elements). For example, MIM (Metal Insulator Metal) or TFD
It is also possible to use (Thin Film Diode) or the like. Since these elements have few manufacturing steps, the manufacturing cost can be reduced or the yield can be improved. Furthermore, since the size of the element is small, the aperture ratio can be improved, and power consumption and brightness can be reduced.

In addition to the active matrix method, it is also possible to use a passive matrix type which does not use an active element (active element, non-linear element). Since no active element (active element, non-linear element) is used, the number of manufacturing steps is reduced, and the manufacturing cost can be reduced or the yield can be improved. Since no active element (active element, non-linear element) is used, the aperture ratio can be improved, and power consumption and brightness can be improved.

Note that a transistor is an element having at least three terminals of a gate, a drain, and a source, and has a channel region between the drain region and the source region, and the drain region, the channel region, and the source region The current can flow through the Here, since the source and the drain change depending on the structure, the operating condition, and the like of the transistor, it is difficult to define which is the source or the drain. Therefore, in this document (specification, claims, drawings, and the like), a region functioning as a source and a drain may not be called a source or a drain. In that case, as an example, each may be described as a 1st terminal and a 2nd terminal. Alternatively, each may be referred to as a first electrode and a second electrode. Alternatively, they may be referred to as a source region and a drain region.

Note that the transistor may be an element having at least three terminals including a base, an emitter, and a collector. Also in this case, the emitter and the collector may be described as a first terminal and a second terminal.

Note that a gate refers to the whole or a part of a gate electrode and a gate wiring (also referred to as a gate line, a gate signal line, a scan line, a scan signal line, or the like). The gate electrode means a conductive film in a portion overlapping with a semiconductor forming a channel region via a gate insulating film. Note that part of the gate electrode is an LDD (Lightly Do
In some cases, the gate insulating film is overlapped with the ped drain region or the source region (or drain region). The gate wiring refers to a wiring for connecting between gate electrodes of each transistor, a wiring for connecting between gate electrodes of each pixel, or a wiring for connecting a gate electrode to another wiring. Say.

However, portions (regions, etc.) which also function as gate electrodes and also function as gate wirings.
There is also a conductive film, wiring, etc.). Such a portion (a region, a conductive film, a wiring, or the like) may be called a gate electrode or may be called a gate wiring. That is, the gate electrode and the gate wiring are
There are also areas that can not be clearly distinguished. For example, in the case where a part of the gate wiring which is extended and arranged overlaps with the channel region, the part (a region, a conductive film, a wiring, and the like) functions as a gate wiring. It will be working. Therefore, such a portion (a region, a conductive film, a wiring, or the like) may be called a gate electrode or a gate wiring.

Note that a portion (a region, a conductive film, a wiring, or the like) which is formed using the same material as the gate electrode and in which the same island (island) as the gate electrode is formed may be called a gate electrode. Similarly, a portion (a region, a conductive film, a wiring, or the like) which is formed of the same material as the gate wiring and in which the same island (island) as the gate wiring is formed may be referred to as a gate wiring. In a strict sense, such a portion (a region, a conductive film, a wiring, or the like) may not overlap with the channel region or may not have a function of connecting to another gate electrode. However, due to the specifications at the time of manufacture, etc., it is formed of the same material as the gate electrode or the gate wiring, and a portion (region, conductive film, wiring, etc.) connected by forming the same island as the gate electrode or the gate wiring. ). Therefore, such a portion (a region, a conductive film, a wiring, or the like) may also be called a gate electrode or a gate wiring.

For example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected by a conductive film formed of the same material as the gate electrode. Such a portion (a region, a conductive film, a wire, etc.) is a portion (a region, a conductive film, a wire, etc.) for connecting the gate electrode and the gate electrode, and may be called a gate wire. Since the transistor in the above can be regarded as one transistor, it may be called a gate electrode. That is, a portion (a region, a conductive film, a wiring, and the like) which is formed of the same material as the gate electrode or the gate wiring and which forms the same island (island) as the gate electrode or the gate wiring
May be called a gate electrode or a gate wiring. Furthermore, for example, a conductive film of a portion connecting the gate electrode and the gate wiring, and formed of a material different from the gate electrode or the gate wiring may also be called a gate electrode, or the gate wiring You may call it.

Note that a gate terminal refers to part of a gate electrode (a region, a conductive film, a wiring, or the like) or a portion electrically connected to the gate electrode (a region, a conductive film, a wiring, or the like). .

Note that when a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, or the like is called, the gate of the transistor may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scan line, and the scan signal line are formed at the same time as a wiring formed in the same layer as the gate of the transistor, a wiring formed of the same material as the gate of the transistor, or the gate of the transistor. It may mean a deposited film. Examples include a storage capacitance wiring, a power supply line, a reference potential supply wiring, and the like.

The source means a source region, a source electrode and a source wiring (a source line, a source signal line,
The whole or part of them including data lines, data signal lines, and the like). The source region refers to a semiconductor region containing a large amount of P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic). Therefore, a region containing a small amount of P-type impurities or N-type impurities, that is, a so-called LDD (Lightly Doped Drain) region,
It is not included in the source area. The source electrode refers to a conductive layer in a portion which is formed of a material different from that of the source region and electrically connected to the source region. However, the source electrode may also be referred to as a source electrode including the source region. A source wiring is a wiring for connecting between source electrodes of each transistor, a wiring for connecting between source electrodes of each pixel, or a wiring for connecting a source electrode and another wiring. Say.

However, a portion that also functions as a source electrode and also functions as a source wiring (
There are also regions, conductive films, wires, etc.). Such a portion (a region, a conductive film, a wiring, or the like) may be called a source electrode or may be called a source wiring. That is, there is also a region where the source electrode and the source wiring can not be clearly distinguished. For example, in the case where a part of the source wiring arranged by extension overlaps with the source region, that portion (a region, a conductive film,
The wiring or the like functions as a source wiring but also functions as a source electrode. Therefore, such a portion (a region, a conductive film, a wiring, or the like) may be called a source electrode or may be called a source wiring.

Note that a portion (a region, a conductive film, a wiring, or the like) which is formed of the same material as the source electrode and forms the same island (island) as the source electrode (a region, a conductive film, a wiring, etc.), or a portion (a region which connects the source electrode and the source electrode) , A conductive film, a wiring, and the like) may also be called a source electrode. Furthermore, a portion overlapping with the source region may also be called a source electrode. Similarly, in a region which is formed of the same material as the source wiring and is connected by forming the same island (island) as the source wiring,
It may be called source wiring. In a strict sense, such a portion (a region, a conductive film, a wiring, or the like) may not have a function of connecting to another source electrode. However, there are portions (a region, a conductive film, a wiring, and the like) which are formed of the same material as the source electrode or the source wiring and are connected to the source electrode or the source wiring due to specifications in manufacturing. Therefore, such a portion (a region, a conductive film, a wiring, or the like) may also be called a source electrode or a source wiring.

Note that, for example, a conductive film in a portion connecting a source electrode and a source wiring and formed of a material different from that of the source electrode or the source wiring may also be called a source electrode, or the source wiring You may call it.

Note that a source terminal refers to part of a region of a source region, a source electrode, and a portion (a region, a conductive film, a wiring, or the like) electrically connected to the source electrode.

Note that when you refer to a source wiring, a source line, a source signal line, a data line, a data signal line, etc.,
In some cases, the source (drain) of the transistor is not connected to the wiring. In this case, the source wiring, the source line, the source signal line, the data line, and the data signal line are formed in the same layer as the source (drain) of the transistor, and formed in the same material as the source (drain) of the transistor Alternatively, it may mean a wiring formed at the same time as the source (drain) of the transistor. Examples include a storage capacitance wiring, a power supply line, a reference potential supply wiring, and the like.

  The drain is the same as the source.

Note that a semiconductor device refers to a device including a circuit including a semiconductor element (a transistor, a diode, a thyristor, or the like). Furthermore, any device that can function by utilizing semiconductor characteristics may be called a semiconductor device. Alternatively, a device including a semiconductor material is referred to as a semiconductor device.

In addition, with a display element, an optical modulation element, a liquid crystal element, a light emitting element, EL element (organic EL element,
An inorganic EL element or an EL element containing an organic substance and an inorganic substance), an electron emitting element, an electrophoresis element, a discharge element, a light reflecting element, a light diffraction element, a digital micro mirror device (DMD) or the like. However, it is not limited to this.

Note that a display device refers to a device having a display element. Note that the display device may include a plurality of pixels including a display element. Note that the display device may include a peripheral driver circuit that drives a plurality of pixels. Note that the peripheral driver circuit for driving the plurality of pixels may be formed on the same substrate as the plurality of pixels. Note that the display device includes a peripheral drive circuit disposed on a substrate by wire bonding, bumps, or the like, an IC chip connected by so-called chip on glass (COG), or an IC chip connected by TAB or the like. It may be
Note that the display device may include a flexible printed circuit (FPC) to which an IC chip, a resistor, a capacitor, an inductor, a transistor, or the like is attached. Note that the display device is connected through a flexible printed circuit (FPC) or the like, and a printed wiring board (P is attached with an IC chip, a resistor, a capacitor, an inductor, a transistor, or the like).
WB) may be included. The display device may include an optical sheet such as a polarizing plate or a retardation plate. Note that the display device may include a lighting device, a housing, an audio input / output device, an optical sensor, and the like. Here, a lighting unit such as a backlight unit includes a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, a light source (LED, cold cathode tube, etc.), a cooling device (water-cooled type,
(Air cooling type) etc. may be included.

Note that the lighting device refers to a device including a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflective sheet, a light source (LED, cold cathode tube, hot cathode tube, etc.), a cooling device, and the like.

Note that a light emitting device refers to a device having a light emitting element or the like. In the case where a light emitting element is included as the display element, the light emitting device is one of the specific examples of the display device.

Here, the reflection device refers to a device having a light reflection element, a light diffraction element, a light reflection electrode, and the like.

Note that a liquid crystal display device refers to a display device including a liquid crystal element. The liquid crystal display device
There are direct-viewing type, projection type, transmission type, reflection type, semi-transmission type and the like.

Note that a driver refers to a device including a semiconductor element, an electric circuit, and an electronic circuit. For example, a transistor that controls input of a signal from a source signal line into a pixel (sometimes referred to as a selection transistor, a switching transistor, or the like), a transistor that supplies voltage or current to a pixel electrode, or voltage or current to a light-emitting element The transistor that supplies the voltage is an example of the driving device. Furthermore, a circuit that supplies a signal to a gate signal line (sometimes referred to as a gate driver or a gate line driver circuit), and a circuit that supplies a signal to a source signal line (such as a source driver or a source line driver circuit) And the like are examples of the drive device.

Note that the display device, the semiconductor device, the lighting device, the cooling device, the light-emitting device, the reflective device, the driver, and the like may overlap with each other. For example, the display device may include a semiconductor device and a light emitting device. Alternatively, the semiconductor device may include a display device and a driver.

When it is explicitly stated that B is formed on A or B is formed on A, it is limited to B being formed in direct contact with A. I will not. It also includes the case where there is no direct contact, that is, when another object intervenes between A and B.
Here, A and B each denote an object (eg, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, or the like).

Thus, for example, layer B is formed directly on top of layer A if it is explicitly stated that layer B is formed on (or on) layer A. The case where another layer (for example, layer C, layer D, etc.) is formed directly in contact with the top of layer A, and the layer B is formed directly in contact with it is included. Note that another layer (for example, the layer C, the layer D, and the like) may be a single layer or a multilayer.

Furthermore, the same applies to the case where it is explicitly stated that B is formed above A, and it is not limited to the fact that B is in direct contact with A, but between A and B. Also includes the case where another object intervenes. Thus, for example, layer B is formed above layer A,
In this case, the layer B is formed in direct contact with the layer A, and another layer (for example, the layer C, the layer D, etc.) is formed directly in contact with the layer A. And the case where the layer B is formed in direct contact with Note that another layer (for example, the layer C, the layer D, and the like) may be a single layer or a multilayer.

In addition, when stated explicitly that B is formed in direct contact with A, it includes the case where B is formed in direct contact with A, and another between A and B It does not include when an object intervenes.

  The same applies to the case where B is below A or B is below A.

In addition, about what is explicitly described as singular, it is desirable that it is singular. However, it is not limited to this, It is also possible to be plural. Similarly, it is desirable that a plurality be explicitly stated as a plurality. However, the invention is not limited thereto, and may be singular.

According to the present invention, it is possible to improve the viewing angle characteristics more than before while maintaining the performance of the display device. Alternatively, according to the present invention, a highly reliable display device can be provided. Alternatively, according to the present invention, a display device with high contrast can be provided. Alternatively, according to the present invention, a lightweight display device can be provided. Alternatively, according to the present invention, a display device with a small size can be provided. Alternatively, according to the present invention, a display device with high luminance can be provided. Alternatively, according to the present invention, a display device with low power consumption can be provided. Alternatively, according to the present invention, a display device with a high aperture ratio can be provided. Alternatively, according to the present invention, a display device with low manufacturing cost can be provided.

5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate voltage dividing elements included in a pixel circuit of a display device of the present invention. 5A and 5B illustrate a display device of the present invention. FIG. 7 is a diagram for explaining an example of the top surface layout of a pixel of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. FIG. 7 is a diagram for explaining an example of the top surface layout of a pixel of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 5A to 5C illustrate pixel circuits of a display device of the present invention. 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Embodiment 1
In this embodiment mode, a structure of a pixel circuit included in a liquid crystal display device of the present invention and an operation of the pixel circuit are described with reference to the drawings. The pixel circuit of the liquid crystal display device of the present invention has a configuration in which a plurality of liquid crystal elements are provided in one pixel and voltages applied to each of the liquid crystal elements are different. Specifically, one or both of a capacitor element and a resistor element connected to a liquid crystal element are provided to make the voltage applied to the liquid crystal element different.

However, the display element is not limited to the liquid crystal element, and various display elements (for example, light-emitting elements (EL
An element (an EL element containing an organic substance and an inorganic substance, an organic EL element, an inorganic EL element), an electron-emitting element), an electrophoretic element, or the like can be used.

There are various operation modes of the liquid crystal to which this embodiment can be applied. For example, TN
(Twisted Nematic) mode, IPS (In-Plane-Switch)
ing) mode, FFS (Fringe Field Switching) mode, M
VA (Multi-domain Vertical Alignment) mode, P
VA (Patterned Vertical Alignment), CPA (Con
tinuous Pinwheel Alignment mode, ASM (Axial)
ly Symmetric aligned Micro-cell mode, OCB (
Optical Compensated Birefringence) mode, FL
C (Ferroelectric Liquid Crystal) mode, AFLC (
AntiFerroelectric Liquid Crystal) etc. However, it is not limited to this. In addition, the liquid crystal to which the CPA mode is applied is ASV (Advance
d Super View) Sometimes called liquid crystal.

FIG. 1A shows an example of the structure of one pixel included in the liquid crystal display device of the present invention. Pixel 100
The first switch 101, the second switch 102, the first liquid crystal element 103, the second liquid crystal element 104, the third liquid crystal element 105, the first capacitor element 106, and the second And the capacitive element 107.

The first wiring 108 and the first electrode of the first liquid crystal element 103 and the first electrode of the first capacitor element 106 are connected to each other through the first switch 101. Second wire 109 and second
The first electrode of the liquid crystal element 104 and the first electrode of the second capacitor element 107 are connected to each other through the second switch 102. The second electrode of the first capacitive element 106 is a second capacitive element 1.
It is connected to the second electrode 07 and the first electrode of the third liquid crystal element 105.

The second electrodes of the first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 are connected to the common electrode 111.

The first wiring 108 and the second wiring 109 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 108 and the second wiring 109. However, it is not limited to this. A constant signal may be supplied regardless of the image.

The first switch 101 and the second switch 102 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, the case where a transistor is used as the first switch 101 and the second switch 102 will be described (
See FIG. 1 (B)). When a transistor is used, its polarity may be P-channel or N-channel. For example, in the N-channel transistor, when the gate-source voltage (V _gs ) exceeds the threshold voltage (V _th ), the source-drain is in a conductive state. In addition, the drain-to-source voltage of the transistor is referred to as V _ds.

FIG. 1B shows the case where an N-channel transistor is used as a switch, and FIG. 1C shows the case where a P-channel transistor is used as a switch. In FIGS. 1B and 1C, the first switch 101N (or the first switch 101P) and the second switch 10 are illustrated.
The gate of 2N (or the second switch 102P) is connected to the third wiring 110. The third wiring 110 functions as a scan line.

As shown in FIG. 49, two scanning lines may be provided. The circuit shown in FIG. 49 is similar to that of the circuit shown in FIG. 8 in which two signal lines are provided.

Note that although the case where a P-channel transistor is used as a switch is illustrated only in FIG. 1, the present invention is not limited to this. Also in the other figures, at least one of the transistors can be replaced with a P-channel transistor.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

A video signal is input to the first wiring 108 and the second wiring 109. A scan signal is input to the third wiring 110. The scanning signal is a digital voltage signal at H level or L level. When the first switch 101 is an N-channel transistor, the scanning signal H
The level is a potential at which the first switch 101 and the second switch 102 can be turned on, and the L level of the scanning signal is a potential at which the first switch 101 and the second switch 102 can be turned off. Alternatively, in the case where the first switch 101 and the second switch 102 are P-channel transistors, the H level of the scan signal is a potential at which the first switch 101 and the second switch 102 can be turned off. Is a first switch 101 and a second switch 1
It is a potential at which 02 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. The current of the video signal may be analog or digital. The video signal is preferably at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 100 will be described separately for the case where the first switch 101 and the second switch 102 are on and the case where the first switch 101 and the second switch 102 are off.

In the case where the first switch 101 is on, the first wiring 108, the first electrode (pixel electrode) of the first liquid crystal element 103, and the first electrode of the first capacitor element 106 Electrically connected. When the second switch 102 is on, the second wiring 109, the first electrode (pixel electrode) of the second liquid crystal element 104, and the first electrode of the second capacitor 107 are formed. Electrically connected. Therefore, the video signal is transmitted from the first wiring 108 to the first liquid crystal element 103.
And the first electrode of the first capacitor element 106. Alternatively, a video signal is input from the second wiring 109 to the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitor 107. Therefore, the potential V ₁₀₃ of the signal input to the first liquid crystal element 103 is approximately equal to the potential input from the first wiring 108, and the second potential V
The potential V ₁₀₄ of the signal input to the liquid crystal element 104 is approximately equal to the potential input from the second wiring 109. Further, the potential V ₁₀₅ of the first electrode of the third liquid crystal element 105 is a voltage _divided by the first capacitor 106 and the second capacitor 107. Here, the capacitance value of the first capacitance element 106 is C ₁₀₆ , and the capacitance value of the second capacitance element 107 is C ₁₀₇ . Then, V ₁₀₅ = ΔV × C ₁₀₇ / (C ₁₀₆ + C ₁₀₇ ) + V ₁₀₃ is obtained. here,
ΔV = V ₁₀₄ −V ₁₀₃ However, this is the case where each capacitive element has no initial charge.
Here, when C ₁₀₆ and C ₁₀₇ have the same size, V ₁₀₅ is V ₁₀₃ and V _10.
Half of the sum of _four . Here, assuming that the potential of the common electrode is 0, the voltage applied to the first liquid crystal element is V ₁₀₃ , the voltage applied to the second liquid crystal element is V ₁₀₄ , and the voltage applied to the third liquid crystal element is It is expressed as V ₁₀₅ = (V ₁₀₃ + V ₁₀₄ ) / 2. When the potentials of the signal input from the first wiring 108 and the signal input from the second wiring 109 are made different, the voltages applied to the respective liquid crystal elements can be made different, and the respective alignment states are different. You can Therefore, it is preferable that the signal input from the first wiring 108 and the signal input from the second wiring 109 have different potentials.

In this manner, by supplying two signals with different potentials and using a capacitive element, it is possible to divide the voltage inside the pixel and create a voltage (third voltage) between the two signals.
The liquid crystal can be easily controlled by applying a third voltage to the third liquid crystal element 105. Further, the third voltage is a voltage between the voltage applied to the first liquid crystal element 103 and the voltage applied to the second liquid crystal element 104. Therefore, an appropriate gray level can be displayed regardless of which gray level is displayed. In addition, even when the polarity of the image signal is positive (when the image signal is higher than that of the common electrode) or when it is negative (when the image signal is lower than the common electrode), appropriate gray scales are displayed. be able to.

Further, the third liquid crystal element 105 can be controlled by generating the third voltage while suppressing increase in the number of scan lines, signal lines, transistors, and the like. This can increase the aperture ratio,
Power consumption can be reduced. In addition, since the layout of the pixels can be arranged with a margin, it is possible to reduce defects such as shorts that may occur due to dust generated in the manufacturing process, and the yield is improved. As a result, the manufacturing cost can be reduced. In addition, since the third liquid crystal element 105 can be controlled without newly providing a wire which functions as a signal line for controlling the third liquid crystal element, the number of connection points between the glass substrate and the external drive circuit is increased. do not do. As a result, high reliability can be maintained.

Note that it is desirable that the first capacitance element 106 and the second capacitance element 107 have approximately the same capacitance value. Since the capacitance values of the two capacitive elements are approximately equal, the potential divided is an intermediate value of the potentials supplied to the two capacitive elements. If there is a difference in capacitance value, it is biased to one of the potentials, and the liquid crystal element can not be uniformly controlled. Therefore, it is desirable that the capacitance value of the first capacitor element 106 and the capacitance value of the second capacitor element 107 be approximately equal. However, it is not limited to this.

When the first switch 101 is off, the first wiring 108, the first electrode (pixel electrode) of the first liquid crystal element 103, and the first electrode of the first capacitor element 106 It is cut off electrically. When the second switch 102 is off, the second wiring 109 and the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitor 107 It is cut off electrically. Therefore, the first electrode of the first liquid crystal element 103, the first capacitor element 106.
The first electrode of the second liquid crystal element 104 and the first electrode of the second capacitor element 107 are in a floating state. The third liquid crystal element 105 is connected to the first liquid crystal element 103 via the first capacitor element 106. However, due to the law of conservation of charge, charges stored in the third liquid crystal element 105 do not leak to the first liquid crystal element 103. Similarly,
The third liquid crystal element 105 is connected to the second liquid crystal element 104 via the second capacitor element 107. However, the charge stored in the third liquid crystal element 105 is
There is no leakage to the second liquid crystal element 104. Therefore, the potentials of the signals input immediately before are held in the first to third liquid crystal elements.

Note that the first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 have transmittances in accordance with the video signal.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Each liquid crystal element may be divided into a plurality. For example, the case where the third liquid crystal element 105 is divided into two, the third liquid crystal element 105a and the fourth liquid crystal element 105b, is shown in FIG.
Shown in. Similarly, the first liquid crystal element 103 and the second liquid crystal element 104 may also be divided into a plurality. The same applies to figures other than FIG.

In FIGS. 1 and 11, when the first switch 101 and the second switch 102 are transistors, their gates are connected to the third wiring 110. But,
It is not limited to this. The gate of the first switch 101 and the gate of the second transistor may be connected to separate wirings (see FIG. 49). The same applies to the figures other than FIGS. 1 and 11.

Although the first switch 101 and the second switch 102 are connected to different signal lines in FIGS. 1 and 11, the present invention is not limited to this. As shown in FIG. 8 or FIG. 17, the first switch 101 and the second switch 102 may be connected to the same wiring. The same applies to the figures other than FIGS. 1 and 11.

Although the liquid crystal element exhibits a voltage holding characteristic, the holding ratio is not 100%. Therefore, in each of FIGS. 1 and 11, a voltage may be held by disposing a capacitor element (hereinafter, simply referred to as a holding capacitor) serving as a holding capacitor in each liquid crystal element. The storage capacitor may be disposed for all liquid crystal elements, or may be disposed only for some liquid crystal elements. The storage capacitor is disposed between each pixel electrode and a wire functioning as a capacitance line connected thereto. Each storage capacitor may be connected to a different capacitance line or may be connected to the same capacitance line. Alternatively, some of the storage capacitors may be connected to the same capacitance line, and the other storage capacitors may be connected to different capacitance lines. In addition, the capacitor line may be shared with another pixel. For example, the pixels in the previous row and the pixels in the next row can be shared. By sharing the capacitance lines between different pixels, the number of wirings can be reduced, and the aperture ratio can be improved. In addition, the capacitor line may be shared with the scan line. When the capacitor line is shared with the scan line, the number of wirings can be reduced and the aperture ratio can be improved. When the capacitor line is shared with the scan line, it is desirable to use the scan line of the pixels in the adjacent row (the pixels in the previous row). The reason is that the signal selection has already been completed when the pixel in the i-th row is selected in the (i-1) -th row (preceding row). Note that in the case where the liquid crystal is IPS or FFS, the common electrode is disposed on the substrate on which the transistor is formed. Therefore, the capacitive line may be shared with the common electrode. When the capacitor line is shared with the common electrode, the number of wirings can be reduced and the aperture ratio can be improved. Note that
The storage capacitor may be divided into a plurality of parts as in the liquid crystal element in FIG. The same applies to the figures other than FIGS. 1 and 11.

Next, a display device having the pixel 100 of FIG. 1 described above will be described with reference to FIG.

The display device includes a signal line driver circuit 1911, a scan line driver circuit 1912, and a pixel portion 1913. In the pixel portion 1913, first wirings S1_1 to Sm_1, second wirings S1_2 to Sm_2, and a scanning line driving circuit 19 which are arranged to be extended in the column direction from the signal line driver circuit 1911.
12 includes third wirings G1 to Gn arranged extending in the row direction from 12 and pixels 1914 arranged in a matrix. The first and second wires function as signal lines. The third wiring functions as a scan line. Then, each pixel 1914 is connected to the first wiring Sj_1 (signal line S1.
It is connected to any one of _1 to Sm_1, the second wiring Sj_2 (any one of the signal lines S1_2 to Sm_2), and the third wiring Gi (any one of the scanning lines G1 to Gn) .

Note that the first wiring Sj_1, the second wiring Sj_2, and the third wiring Gi correspond to the first wiring 108, the second wiring 109, and the third wiring 110 in FIG. 1, respectively.

When a row of pixels to be operated is selected by a signal output from the scan line driver circuit 1912, the respective pixels belonging to the same row are simultaneously selected. The video signal output from the signal line driver circuit 1911 is written to the pixels in the selected row. At this time, potentials corresponding to the luminance data of the respective pixels are supplied to the first wirings S1_1 to Sm_1 and the second wirings S1_2 to Sm_2.

For example, when the data writing period of the i-th row is finished, a signal is written to the pixel belonging to the i + 1th row. Then, the pixel for which the data writing period has ended in the i-th row has a transmittance corresponding to the signal.

Note that a plurality of signal line driver circuits 1911 or scan line driver circuits 1912 may be provided. For example, the first wiring Sj_1 (any one of the signal lines S1_1 to Sm_1)
The second signal line driver circuit may drive the second signal line Sj_2 (any one of the signal lines S1_2 to Sm_2) by driving with the first signal line driver circuit. In that case, the pixel section 191
The first signal line drive circuit and the second signal line drive circuit may be disposed at the upper and lower sides with 3 interposed therebetween. For example, the first signal line drive circuit is disposed on one side of the main surface of the substrate, and the second signal line drive circuit is disposed on the other side opposite to the other, and the two signal line drive circuits are sandwiched. Pixel area 1
913 may be arranged.

Note that in order to suppress display unevenness such as deterioration or flicker of the liquid crystal material, the polarity of the voltage applied to the pixel electrode is inverted with respect to the potential (common potential) of the common electrode in the liquid crystal capacitance every fixed period. It is preferable to use a reverse drive which is driven to drive. In the present specification,
When the potential of the pixel electrode is higher than the common electrode, a positive voltage is applied, and when the potential of the opposite electrode is higher than the pixel electrode, a negative voltage is applied to the liquid crystal capacitor. In addition, an image signal input from the signal line when a positive voltage is applied to the liquid crystal capacitor is a positive signal, and an image signal input from the signal line is negative when a negative voltage is applied. Expressed as a sex signal. Examples of inversion drive include frame inversion drive, source line inversion drive, gate line inversion drive, dot inversion drive, and the like.

The frame inversion drive is a drive method for inverting the polarity of the voltage applied to the liquid crystal capacitor every one frame period. Note that one frame period corresponds to a period for displaying an image for one pixel, and there is no particular limitation on that period, but at least 1/60 seconds so that a person viewing the image does not feel flicker. It is preferable to set it as the following.

In source line inversion driving, the polarity of the voltage applied to the liquid crystal capacitors belonging to the pixels connected to the same signal line is inverted with respect to the liquid crystal capacitors belonging to the pixels connected to the adjacent signal lines, This is a driving method for performing frame inversion on each pixel. On the other hand, with gate line inversion driving, the polarity of the voltage applied to the liquid crystal capacitors belonging to the pixels connected to the same wiring functioning as the scanning line is compared to the liquid crystal capacitors belonging to the pixels connected to the adjacent scanning lines. Invert,
Furthermore, it is a driving method for performing frame inversion on each pixel.

The dot inversion drive is a drive method for reversing the polarity of the voltage applied to the liquid crystal capacitance between adjacent pixels, and is a drive method combining the source line inversion drive and the gate line inversion drive.

By the way, the above-mentioned frame inversion drive, source line inversion drive, gate line inversion drive,
When dot inversion driving or the like is employed, the width of the potential required for the image signal written to the signal line is twice as large as that when not performing the inversion driving. Therefore, in order to solve this problem, in the case of frame inversion driving or gate line inversion driving, common inversion driving may be employed in which the potential of the opposite electrode is further inverted.

The common inversion drive is a drive method of changing the potential of the common electrode in synchronization with the inversion of the polarity applied to the liquid crystal capacitance, and the potential required for the image signal written to the signal line by performing the common inversion drive. The width can be reduced.

In addition, one pixel may have a plurality of the pixel configurations described above. For example, one pixel may have a plurality of sub-pixels, and the plurality of sub-pixels may be used to express the gradation of one pixel. Signal lines connected to different sub-pixels may be shared between the sub-pixels. Note that different voltages can be applied to liquid crystal capacitors belonging to the respective sub-pixels by supplying different potentials to the respective capacitive lines connected to the sub-pixels. In this way,
It is also possible to further improve the viewing angle by utilizing the difference in the orientation of the liquid crystal in each sub-pixel.

In FIG. 1, although the storage capacitance is not specified, it is desirable to arrange the storage capacitance as described above. By arranging the storage capacitor, the influence of the leakage current of the liquid crystal element can be reduced, and the potential can be easily held. Also, the influence of switching noise such as feedthrough can be reduced. Accordingly, FIG. 16 shows the case where the storage capacitor is arranged in the circuit of FIG. 1 as an example of the case where the storage capacitor is illustrated.

In FIG. 16, the pixel 400 includes a first switch 401 and a second switch 402.
A first liquid crystal element 403, a second liquid crystal element 404, a third liquid crystal element 405, a first capacitance element 406, a second capacitance element 407, a third capacitance element 408, a fourth Capacitive element 4 of
And 09 and a fifth capacitive element 417.

The first wiring 410 is a first electrode of the first liquid crystal element 403, a first electrode of the first capacitive element 406, and a first electrode of the second capacitive element 407 through the first switch 401. It is connected to the. The second wiring 411 is a first electrode of the second liquid crystal element 404, a first electrode of the third capacitive element 408, and a first electrode of the fourth capacitive element 409 through the second switch 402. It is connected to the. The second electrode of the first capacitor element 406 and the second electrode of the third capacitor element 408 are connected to the first electrode of the third liquid crystal element 405 and the first electrode of the fifth capacitor element 417. ing. The second electrode of the second capacitor 407 is connected to the fourth wiring 413, and the second electrode of the fourth capacitor 409 is connected to the fifth wiring 414. Fifth capacitance element 417
The second electrode is connected to the sixth wiring 415.

The second electrodes of the first liquid crystal element 403, the second liquid crystal element 404, and the third liquid crystal element 405 are connected to the common electrode 416.

The first wiring 410 and the second wiring 411 function as signal lines. Therefore, the first
Usually, an image signal is supplied to the wire 410 and the second wire 411 of FIG. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 412 functions as a scan line. The fourth wiring 413, the fifth wiring 414, and the sixth wiring 415 function as capacitance lines.

The first switch 401 and the second switch 402 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, the case where a transistor is used as the first switch 401 and the second switch 402 will be described.
When a transistor is used, its polarity may be P-channel or N-channel.

FIG. 16B shows the case where an n-channel transistor is used as a switch. Figure 16
In (B), the gates of the first switch 401N and the second switch 402N are connected to the third wiring 412. The third wiring 760 functions as a scan line.

Note that, as in FIG. 16, holding capacitors may be arranged in all liquid crystal elements, but the present invention is not limited to this. For example, as shown in FIG. 7, the storage capacitor may be disposed only in some of the liquid crystal elements. Each storage capacitor may be connected to a different capacitance line, may be connected to the same capacitance line, or is partially the same, and is partially connected to a different capacitance line. It is also good. In addition, the capacitor line may be shared with another pixel. For example, the pixels in the previous row and the pixels in the next row can be shared. When the capacitance lines are shared between different pixels, the number of wirings can be reduced, and the aperture ratio can be improved. Alternatively, the capacitive line may be shared with the scan line. When the capacitor line is shared with the scan line, the number of wirings can be reduced and the aperture ratio can be improved. When the capacitor line is shared with the scan line, it is desirable to use the scan line of the adjacent pixel (the pixel of the previous row). The reason is that the signal selection has already been completed when the pixel in the i-th row is selected in the (i-1) -th row (preceding row). In the case where the liquid crystal is IPS, FFS, or the like, the common electrode is disposed on the substrate on which the transistor is formed. Therefore, the capacitive line may be shared with the common electrode. When the capacitor line is shared with the common electrode, the number of wirings can be reduced and the aperture ratio can be improved.

Note that it is desirable that a constant potential be supplied to the capacitor line. However, it is not limited to this. For example, in FIG. 7, a signal that changes periodically plural times may be supplied to each capacitor line, that is, the fourth wiring 413 and the fifth wiring 414 during one frame period. Then, signals inverted to each other may be added to the capacitor lines, that is, the fourth wiring 413 and the fifth wiring 414. As a result, effective voltages applied to the first liquid crystal element 404, the second liquid crystal element 403, and the like can be changed.

Note that although two wirings functioning as capacitance lines are provided in FIG. 16, the present invention is not limited to this. Capacitance lines can be combined into one. Furthermore, the common electrode and the capacitive line can be shared. This is because the common electrode and the capacitance line are not particularly limited except that both have to be kept at the same potential. FIG. 50 shows a diagram in which the capacitance lines are integrated into one and the common electrode and the capacitance line are shared. FIG. 50 has the same effect as that of FIG.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Note that in the other drawings of FIG. 1 and the like used in the above description, the transistors used as the first switch or the second switch are each connected to different signal lines, but the present invention is not limited to this. These may be connected to the same signal line. For example, FIG. 8 shows an example in which two signal lines are provided in FIG. 1 and a plurality of scanning lines are provided. Alternatively, FIG. 17 shows an example in which the scanning lines in FIG. 8 are put together.

Note that, in FIGS. 8 and 17, as in FIGS. 7 and 16 described above, it is also possible to dispose holding capacitors in different liquid crystal elements. Therefore, as an example, FIGS. 18 and 19 show an example where storage capacitors are arranged in the first and second liquid crystal elements as in FIG.

Therefore, the contents described in FIG. 1 and FIG. 7 can be applied to FIG. 8, FIG. 16, FIG. 17 and FIG.

In FIG. 8, a pixel 450 includes a first switch 451, a second switch 452, a first liquid crystal element 453, a second liquid crystal element 454, a third liquid crystal element 455, and a first capacitor. The element 456 and a second capacitor 457 are included.

The first wiring 458, and the first electrode of the first liquid crystal element 453 and the first electrode of the first capacitor 456 are connected to each other through the first switch 451. Also, the first wiring 45
8 and the first electrode of the second liquid crystal element 454 and the first electrode of the second capacitor 457,
It is connected via a second switch 452. The second electrode of the first capacitor 456 and the second electrode of the second capacitor 457 are connected to the first electrode of the third liquid crystal element 455.

Note that a transistor can be used as the switch. First switch 451N
Is connected to the second wiring 459. The gate of the second switch 452N is the third
Are connected to the wiring 460 of FIG.

The second electrodes of the first liquid crystal element 453, the second liquid crystal element 454, and the third liquid crystal element 455 are connected to the common electrode 461.

The first wiring 458 functions as a signal line. Therefore, an image signal is usually supplied to the first wiring 458. However, it is not limited to this. A constant signal may be supplied regardless of the image. The second wiring 459 and the third wiring 460 function as scan lines.

First, consider the operations of FIG. 8 and FIG. First, an active signal is supplied to the third wiring 460, and the second switch 452 is turned on. Here, an active signal refers to a signal that can turn on the second switch 452. When the second switch 452 is turned on, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the second liquid crystal element 454 and the first electrode of the second capacitor 457. .

Next, the second switch 452 is turned off, an active signal is supplied to the second wiring 459, and the first switch 451 is turned on. The active signal here is the second switch 4
A signal that can turn on 52. Then, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the first liquid crystal element 453 and the first electrode of the first capacitor 456. It is desirable that the video signal supplied at this time be at a different potential than when the second switch 452 is turned on. When the potentials are different, different voltages can be supplied to the respective liquid crystal elements, and the viewing angle can be improved.

Note that when the first switch 451 is on, the third liquid crystal element 455 is capacitively coupled to the pixel electrode of the first liquid crystal element 453 via the first capacitor 456. Therefore, the potential of the pixel electrode of the third liquid crystal element 455 changes in accordance with the voltage supplied from the first wiring 458 when the first switch 451 is on.

Similarly, when the first switch 451 is on, the second liquid crystal element 454 is connected to the pixel electrode of the first liquid crystal element 453 via the first capacitor 456 and the second capacitor 457. It is capacitively coupled. Therefore, the potential of the pixel electrode of the second liquid crystal element 454 changes in accordance with the voltage supplied from the first wiring 458 when the first switch 451 is on.

Next, the first switch 451 is turned off, and the potential of each liquid crystal element is held.
By operating in this manner, voltages applied to the respective liquid crystal elements can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. The various transistors can be driven by various methods such as timing of turning on / off and potential of a signal line.

Note that in FIG. 18, it is desirable that a constant potential be supplied to each capacitance line.
However, it is not limited to this. For example, during one frame period, each capacitance line, that is, the first capacitance line and the second capacitance line may be supplied with a signal that changes periodically a plurality of times. And
Signals inverted from each other may be added to the respective capacitance lines, that is, the first capacitance line and the second capacitance line. As a result, effective voltages applied to the first liquid crystal element 453, the second liquid crystal element 454, and the like can be changed. By operating in this manner, the potentials of the liquid crystal elements can be made different. As a result, the viewing angle can be widened.

  Next, the operation of FIG. 17 and FIG. 19 will be considered.

An active signal is supplied to the second wiring 459, and the first switch 451 and the second switch 452 are turned on. Then, the first electrode (pixel electrode) of the first liquid crystal element 453,
A video signal is transmitted from the first wiring 458 to the first electrode of the first capacitor 456, the first electrode (pixel electrode) of the second liquid crystal 454, and the first electrode of the second capacitor 457. Supplied.

At this time, when a transistor is used for the first switch 451 and the second switch 452, an on resistance is generated. The on resistance of the first switch 451 is desirably higher than the on resistance of the second switch 452. The high on-resistance of the transistor means that the ratio of the channel width to the channel length L (W / L) is small. As described above, by increasing the on-resistance of the transistor, the potential of the pixel electrode of each liquid crystal element is determined by the balance of the leakage current and the like of each capacitor element and each storage capacitor. Then, different voltages can be applied to each liquid crystal element, and the viewing angle can be improved. However, the present invention is not limited to this, and the first switch 451 and the second switch 452 may have substantially the same on-resistance.

Next, the first switch 451 and the second switch 452 are turned off, and the voltage applied to each liquid crystal element is held.

By operating in this manner, voltages applied to the respective liquid crystal elements can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. The various transistors can be driven by various methods such as timing of turning on / off and potential of a signal line.

In FIG. 19, it is desirable that a constant potential be supplied to each capacitance line.
However, it is not limited to this. For example, in one frame period, each capacitor line, that is, the first capacitor line 463 and the second capacitor line 465 may supply a signal that changes periodically a plurality of times. Then, signals inverted to each other may be added to the respective capacitor lines, that is, the first capacitor line 463 and the second capacitor line 465. As a result, the first liquid crystal element 453 and the second liquid crystal element 4 are
It is possible to change the effective voltage applied to 54 mag. By operating in this manner, the potentials of the liquid crystal elements can be made different. As a result, the viewing angle can be widened.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

FIG. 2 shows an example of the configuration of the pixel circuit included in the liquid crystal display device of the present invention, which is different from FIG. The pixel 150 includes a first switch 151, a second switch 152, a first liquid crystal element 153, a second liquid crystal element 154, a third liquid crystal element 155, a first capacitor element 156, a first And the third capacitor 161.

The first wiring 158 is connected to the first electrode of the first liquid crystal element 153 and the first electrode of the first capacitor 156 through the first switch 151. The second wiring 159 is connected to the first electrode of the second liquid crystal element 154 and the first electrode of the second capacitor element 157 through the second switch 152. The second electrode of the first capacitive element 156 is a second capacitive element 1.
A third capacitive element 1 is connected to the 57 second electrode and the first electrode of the third capacitive element 161.
The second electrode 61 is connected to the first electrode of the third liquid crystal element 155.

The second electrodes of the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 are connected to a common electrode.

The first wiring 158 and the second wiring 159 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 158 and the second wiring 159. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 160 functions as a scan line.

The first switch 151 and the second switch 152 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, the case where a transistor is used as the first switch 151 and the second switch 152 will be described.
When a transistor is used, its polarity may be P-channel or N-channel.

FIG. 2B shows the case where an n-channel transistor is used as a switch. Figure 2 (B
, The gates of the first switch 151 N and the second switch 152 N are connected to the third wiring 110. The third wiring 160 functions as a scan line.

Also in FIG. 2, as in FIG. 1, two scanning lines may be provided as shown in FIG.
Note that a p-channel transistor can also be used as a switch.

A video signal is input to the first wiring 158 and the second wiring 159. A scan signal is input to the third wiring 160. The scanning signal is a digital voltage signal at H level or L level. When the first switch 151 and the second switch 152 are N-channel transistors, the H level of the scan signal is a potential at which the first switch 151 and the second switch 152 can be turned on, and the L level of the scan signal is 1 switch 151 and second switch 1
It is a potential at which 52 can be turned off. Alternatively, the first switch 151 and the second switch 15
When 2 is a P-channel transistor, the H level of the scanning signal is a potential at which the first switch 151 and the second switch 152 can be turned off, and the L level of the scanning signal is the first switch 1
It is a potential at which the 51 and the second switch 152 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Or
The video signal may be current. The current of the video signal may be analog or digital. The video signal is at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

Regarding the operation of the pixel 150 in FIG. 2, the first switch 151 and the second switch 1
The case where the switch 52 is on and the case where the first switch 151 and the second switch 152 are off will be separately described.

When the first switch 151 is turned on, the first wiring 158, the first electrode (pixel electrode) of the first liquid crystal element 153, and the first electrode of the first capacitor 156 are formed. Electrically connected. When the second switch 152 is on, the second wiring 159 and the first electrode (pixel electrode) of the second liquid crystal element 154 and the first electrode of the second capacitor 157 Electrically connected. Therefore, the video signal is transmitted from the first wiring 158 to the first liquid crystal element 153.
The first electrode (pixel electrode) of the first liquid crystal element 154 and the first electrode (pixel electrode) of the second liquid crystal element 154 are input from the second wiring 159 to the first electrode of the second liquid crystal element 154 (pixel electrode). Capacitive element 157
Is input to the first electrode of the Therefore, the potential V _{1 of the} signal input to the first liquid crystal element 153
₅₃ is approximately equal to the potential input from the first wiring 158, and the potential V ₁₅₄ of the signal input to the second liquid crystal element 154 is approximately equal to the potential input from the second wiring 159. Also,
The third of the first potential _{V 161} of the electrode 3 in FIG. 1 of the liquid crystal element 105 of the capacitor 161
It is the same as the first potential _{V 105} of _electrodes, when the _{C 106} and _{C 107} have the same size, the first electrode potential _{V 161} of the third capacitor _{161, V 153} and _{V 154} Approximately equal to half of the sum of Note that the potential of the first electrode of the third liquid crystal element 155 is set to V ₁₅₅ . Here, when the potential of the common electrode is 0, the voltage applied to the third liquid crystal element 155 is V ₁₅₅ . The voltage V ₁₅₅ is a voltage _divided by the third capacitor element 161 and the third liquid crystal element 155. Thus, different voltages can be supplied to the liquid crystal element by using the capacitor. In this manner, the voltages applied to the respective liquid crystal elements can be made different, and the respective alignment states can be made different.

In this manner, by supplying two signals with different potentials and using a capacitive element, the voltage can be divided inside the pixel to create a third voltage. The liquid crystal can be easily controlled by applying a third voltage to the third liquid crystal element 105. Further, the third voltage is a voltage between the voltage supplied to the first liquid crystal element 103 and the voltage supplied to the second liquid crystal element 104. Therefore, an appropriate gray level can be displayed regardless of which gray level is displayed. In addition, even when the polarity of the image signal is positive (when the image signal is higher than that of the common electrode) or when it is negative (when the image signal is lower than the common electrode), appropriate gray scales are displayed. be able to.

Further, the third liquid crystal element 155 can be controlled by generating the third voltage while suppressing increase in the number of scan lines, signal lines, transistors, and the like. Thereby, the aperture ratio can be increased, and power consumption can be reduced. In addition, since the layout of the pixels can be arranged with a margin, it is possible to reduce defects such as short-circuiting due to dust or the like generated in the manufacturing process, and the yield is improved. As a result, the manufacturing cost can be reduced. In addition, since the third liquid crystal element 155 can be controlled without newly providing a signal line, the number of connection points between the glass substrate and the external drive circuit does not increase. As a result, high reliability can be maintained.

When the first switch 151 is off, the first wiring 158, the first electrode (pixel electrode) of the first liquid crystal element 153, and the first electrode of the first capacitor 156 It is cut off electrically. When the second switch 152 is off, the second wiring 159, the first electrode (pixel electrode) of the second liquid crystal element 154, and the first electrode of the second capacitor 157 It is cut off electrically. Therefore, the first electrode of the first liquid crystal element 153, the first capacitor 156
The first electrode of the second liquid crystal element 154 and the first electrode of the second capacitor element 157 are in a floating state. The third liquid crystal element 155 is the first liquid crystal element 153 and the first liquid crystal element 153 is the first liquid crystal element.
Are connected via the capacitor 156 and the third capacitor 161. However, due to the law of conservation of charge, charges stored in the third liquid crystal element 105 do not leak to the first liquid crystal element 153. The first liquid crystal element 153 is connected via the second capacitor element 157. However, the charge stored in the third liquid crystal element 155 is the second liquid crystal element 1 due to the charge storage law.
There is no leak in the direction of 54. Therefore, the potentials of the signals input immediately before are held in the first to third liquid crystal elements.

Note that the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 have transmittances in accordance with the video signal.

That is, as compared with FIG. 1, FIG. 2 corresponds to the third liquid crystal element 105 of FIG. 1 in which the third capacitance element 161 and the third liquid crystal element 155 of FIG. It corresponds to the case of replacement. Therefore, the contents described in FIG. 1 can also be applied to FIG. For example, as shown in FIG. 15, one in which the third capacitor element 161 and the third liquid crystal element 155 are connected in series may be divided into a plurality. Alternatively, as shown in FIG. 12, only the liquid crystal element may be divided into a plurality of elements without the capacitive element.

Note that in FIG. 2, the portion of the third liquid crystal element 105 in FIG.
The liquid crystal element 155 is replaced by one connected in series, but is not limited thereto. It may be replaced by another liquid crystal element. For example, FIG. 13 shows the case where the first liquid crystal element 153 is replaced with one in which a capacitor and a liquid crystal element are connected in series. Also in this case, as in FIG.
As shown in, it may be divided into a plurality.

FIG. 2 is a diagram in which the portion of the third liquid crystal element 105 in FIG. 1 is replaced with one in which the third capacitance element 161 and the third liquid crystal element 155 in FIG. 2 are connected in series. Variations similar to 1 are possible. That is, as shown in FIG. 7, a storage capacitor may be added to a part of each liquid crystal element, or as shown in FIG. 16, a storage capacitor may be added to all the liquid crystal elements. Also, as shown in FIG. 8 or FIG. 18, the number of scanning lines may be two and the number of signal lines may be combined into one.
Alternatively, as shown in FIG. 19, both scanning lines and signal lines may be combined into one.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

FIG. 3 shows an example of the configuration of the pixel circuit of the liquid crystal display device of the present invention, which is different from the others. The pixel 200 includes a first switch 201, a second switch 202, a transistor 203, a first liquid crystal element 204, a second liquid crystal element 205, and a third liquid crystal element 2.
And the first capacitor element 207 and the second capacitor element 208.

The first wiring 209 is connected to the first electrode of the first liquid crystal element 204 and the first electrode of the first capacitor element 207 through the first switch 201. The second wire 210 is a second
The second switch 202 is connected to the first electrode of the liquid crystal element 205 and the first electrode of the second capacitor element 208. In addition, the second wiring 210 is a first wiring of the third liquid crystal element 206.
Are connected via the transistor 203 to the electrode of the The gates of the first switch 201, the second switch 202, and the transistor 203 are connected to the third wiring 211. The second electrode of the first capacitor element 207 is connected to the second electrode of the second capacitor element 208 and the first electrode of the third liquid crystal element 206.

Note that the transistor 203 operates as a switch whose on resistance is higher than that of the first switch 201 and the second switch 202. That is, it can be treated in the same manner as a switch in which resistive elements are connected in series. However, it is not limited to this. The on resistance of the transistor 203 may be lower than that of the first switch 201 and the second switch 202.

Note that although the transistor 203 in FIG. 3 is an n-channel transistor, the present invention is not limited to this. That is, the transistor 203 may be a p-channel transistor.

The second electrodes of the first liquid crystal element 204, the second liquid crystal element 205, and the third liquid crystal element 206 are connected to a common electrode.

The first wiring 209 and the second wiring 210 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 209 and the second wiring 210. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 211 functions as a scan line.

The first switch 201 and the second switch 202 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, in the case of using a transistor described in the case of using a transistor as the first switch 101 and the second switch 102, the polarity may be a p-channel type or an n-channel type.

FIG. 3B shows the case where an n-channel transistor is used as a switch. Figure 2 (B
, The gates of the first switch 201N and the second switch 202N are connected to the third wiring 110. The third wiring 211A functions as a scan line.

Also in FIG. 2, as in FIG. 1, two scanning lines may be provided as shown in FIG.
Note that a p-channel transistor can also be used as a switch.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

A video signal is input to the first wiring 209 and the second wiring 210. A scan signal is input to the third wiring 211. The scanning signal is a digital voltage signal at H level or L level. When the first and second switches and the transistor 203 are N-channel transistors, the H level of the scan signal is a potential at which the first to third transistors can be turned on, and the L level of the scan signal is the first and second It is a potential at which the switch and the transistor 203 can be turned off. Alternatively, when the first and second switches and the transistor 203 are P-channel, the H level of the scan signal is a potential at which the first and second switches and the transistor 203 can be turned off, and the L level of the scan signal is 1 and 2 switch, and transistor 2
It is a potential at which 03 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. The current of the video signal may be analog or digital. The video signal is at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

That is, in comparison with FIG. 1, FIG. 3 shows the pixel electrode of the third liquid crystal element 206 of FIG.
It can be said that the transistor 203 which is connected to the wiring 210 is added. In the case of FIG. 1, in the case where some noise or leakage current enters the point where the first capacitance element 207 and the second capacitance element 208 are connected, charge is accumulated there. As a result, the voltage applied to the liquid crystal element is affected, and the image quality may be degraded. However, as shown in FIG. 3, the accumulated charge can be extracted by adding the transistor 203. As a result, it is possible to reduce image quality defects such as burn-in.

Note that, as described above, the on resistance of the transistor 203 is preferably higher than the on resistance of the first switch 201 or the second switch 202. The high on-resistance of the transistor means that the ratio (W / L) of the channel width W to the channel length L is small.
Thus, by increasing the on resistance of the transistor, the potential at the point where the first capacitive element 207 and the second capacitive element 208 are connected is the leakage current of each capacitive element, each holding capacitance, etc. It will be determined by the balance of However, the present invention is not limited to this. The first to third transistors may be formed to have the same size, and a resistance element may be connected in series to the third transistor 203.

Therefore, the contents described in FIGS. 1 and 2 can be applied to FIG. 3 as well. For example, FIG. 4 shows the case where FIG. 2 is applied to FIG.

In FIGS. 3 and 4, etc., the first switch 201N (or the first switch 251) is used.
N), second switch 202N (or second switch 252N) and transistor 203
The (transistor 253) is controlled by the third wiring 211 (or the third wiring 262), but is not limited to this. These may be connected to different wires and controlled separately. Alternatively, a part may be connected to another wiring.

Although the transistor 203 is connected to the second wiring 210 in FIG. 3, the transistor 203 may be connected to the first wiring 209. The same applies to the case where the third transistor 203 is connected to the first wiring 209. Similarly to FIG. 3, the transistor 253 is connected to the second wiring 261 in FIG. 4, but may be connected to the first wiring 260.

Alternatively, another wiring may be provided to connect the transistors. The case is shown in FIG. In FIG. 5B, two scan lines are provided, and the scan line controlling the first switch 301N and the second switch 302N and the scan line controlling the transistor 303 have different wirings, but the invention is limited thereto. I will not. The first switch 301N, the second switch 302N, and the transistor 303 may be connected to the same scan line. Therefore, the contents described in the other drawings such as FIG. 1 can be applied to FIG. For example, FIG. 6 shows the case where FIG. 2 is applied to FIG.

Note that the transistor 303 is preferably turned on in FIG. 5 when the first switch 301 or the second switch 302 is turned off; however, this embodiment is not limited to this. The transistor 303 may be turned on when the first switch 301 or the second switch 302 is turned on, or for a partial period (the first half is desirable) when the switch is turned on. .

Note that although it is desirable that the potential of the fifth wiring 313 be approximately equal to that of the common electrode, the present invention is not limited to this. It is also possible to set the potential substantially equal to the potential of the first wiring 309 or the second wiring 310.

Note that the fifth wiring 313 can be shared with another wiring. For example, capacitive lines,
It can be shared with scanning lines etc. Note that the wiring to be shared may be a wiring of another pixel. By these, an aperture ratio can be improved. The contents described in the other drawings such as FIG. 1 can be applied to FIG. That is, at least one of the transistors may be a p-channel transistor, or the liquid crystal element may be divided into a plurality.

Note that although the transistor 353 is connected to the third capacitor 359 in FIG.
It is not limited to this. The transistor 353 may be connected between a contact of the third capacitor 359 and the third liquid crystal element 356 and the fifth wiring 364. The contents described in the other drawings such as FIG. 1 can be applied to FIG.

  Note that the first to third liquid crystal elements have transmittances according to the video signal.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Although the case has been described above in which two capacitive elements are connected between the signal lines via the switch, the present invention is not limited to this. It is possible to arrange more capacitive elements. By adding a capacitive element, the voltage applied to the liquid crystal element can be further varied. Then, by applying the respective voltages to the respective liquid crystal elements, a large number of liquid crystal elements with different applied voltages can be arranged. As a result, the viewing angle can be widened.

Therefore, an example in which a capacitor element and a liquid crystal element are further added and disposed to FIG. 1 is shown in FIG.
Shown in. Alternatively, FIG. 20 shows an example in which a capacitor and a liquid crystal element are further added and arranged to FIG. A liquid crystal element may be further added. And, the first liquid crystal element 503 is the third one.
It may be connected to the liquid crystal element 505 in the same manner. Similarly, in the circuits shown in the other drawings, a capacitor and a liquid crystal element can be added. The contents described in the description of the other figures can be applied to FIGS. 9 and 20.

In FIG. 9, a pixel 500 includes a first switch 501, a second switch 502, a first liquid crystal element 503, a second liquid crystal element 504, a third liquid crystal element 505, and a fourth liquid crystal. The element 506, the first capacitance element 507, the second capacitance element 508, and the third capacitance element 50
And a first wiring 510, a second wiring 511, and a third wiring 512.

The first wiring 510 is connected to the first electrode of the first liquid crystal element 503 and the first electrode of the first capacitor element 507 through the first switch 501. The second wiring 511 is connected to the first electrode of the second liquid crystal element 504 and the first electrode of the third capacitor 509.
Connected via 2 The second electrode of the first capacitive element 507 is a second capacitive element 508.
Are connected to the first electrode of the third liquid crystal element 505 and the first electrode of the third liquid crystal element 505. The second electrode of the second capacitor element 508 is connected to the second electrode of the third capacitor element 509 and the first electrode of the fourth liquid crystal element 506.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to a common electrode.

The first wiring 510 and the second wiring 511 function as signal lines. Therefore, the first
Usually, an image signal is supplied to the wire 510 and the second wire 511 of FIG. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 512 functions as a scan line.

The first switch 501 and the second switch 502 are not particularly limited as long as they function as switches. For example, in the case of using a transistor, its polarity may be P-channel or N-channel.

FIG. 9B shows the case where an n-channel transistor is used as a switch. Figure 9 (B
, The gates of the first switch 501N and the second switch 502N are connected to the third wiring 512. The third wiring 512 functions as a scan line.

Also in FIG. 9, as in FIG. 1, two scanning lines may be provided as shown in FIG.
Note that a p-channel transistor can also be used as a switch.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

  Furthermore, the liquid crystal element may be divided into a plurality of parts as shown in FIG.

Note that the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth
The liquid crystal element 506 has a transmittance corresponding to the video signal.

As described above, the number of liquid crystal elements per pixel can be four, and the number of liquid crystal elements per pixel can be further increased. By increasing the number of liquid crystal elements per pixel, various alignment states can be provided, and a liquid crystal display having a wider viewing angle can be provided.

Note that FIGS. 9 and 20 described the case of adding a liquid crystal element by adding a capacitor. However, it is not limited to this. By increasing the number of transistors, signal lines, etc.
The number of liquid crystal elements arranged in one pixel can be increased. Thus, as an example, FIG. 10 shows a case where liquid crystal elements are additionally arranged by increasing the number of transistors and signal lines in the circuit of FIG. However, it is not limited to this configuration. In FIG. 10, signal lines are added without adding scan lines, but it is also possible to add scan lines without adding signal lines. In FIG. 21, the case where the potential supplied from the signal line is divided by adding the capacitor 584 without adding the signal line and arranging the capacitor between the signal line and the fourth liquid crystal element 557 is described. Show. In FIG. 22, a capacitor is added without adding a signal line, and a capacitor 572 is added between the signal line and the first liquid crystal element 554, and between the signal line and the first liquid crystal element 554. The case where the potential supplied from the signal line is divided is shown by arranging in FIG. With the structures shown in FIGS. 21 and 22, different voltages can be applied to the four liquid crystal elements without adding a signal line.

Note that although the fourth liquid crystal element 557 is connected to the first wiring 560 in FIGS. 21 and 22, the fourth liquid crystal element 557 may be connected to the second wiring 561.

Note that as in the case of FIG. 1, liquid crystal elements can be additionally provided in the circuits shown in the other drawings. The contents described in the description of the other figures can be applied to FIG. That is, the transistor may be a p-channel transistor or the liquid crystal element may be divided into a plurality.

In FIG. 10, the pixel 550 includes a first switch 551 and a second switch 552.
The third switch 553, the first liquid crystal element 554, the second liquid crystal element 555, the third liquid crystal element 556, the fourth liquid crystal element 557, the first capacitor element 558, and the second Capacitive element 5
And 59.

The first wiring 560 is connected to the first electrode of the first liquid crystal element 554 and the first electrode of the first capacitor 558 through the first switch 551. The second wiring 561 is connected to the first electrode of the second liquid crystal element 555 and the first electrode of the second capacitor 559. The third wiring 562 is connected to the first electrode of the fourth liquid crystal element 557 through the third switch 553. The second electrode of the first capacitor 558 is connected to one of the second electrode of the second capacitor 559 and the first electrode of the third liquid crystal element 556.

FIG. 10B shows the case where an n-channel transistor is used as a switch. Figure 10
In (B), the gates of the first switch 551N and the second switch 552N are connected to the fourth wiring 563. The fourth wiring 563 functions as a scan line.

Also in FIG. 10, as in FIG. 1, two scanning lines may be provided as shown in FIG.
Note that a p-channel transistor can also be used as a switch.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

  Furthermore, as shown in FIG. 11 and the like, the liquid crystal element may be further divided into a plurality.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to a common electrode.

The first wiring 560, the second wiring 561, and the third wiring 562 function as signal lines. Therefore, the first wiring 560, the second wiring 561, and the third wiring 562 are generally
An image signal is provided. However, it is not limited to this. A constant signal may be supplied regardless of the image. The fourth wiring 563 functions as a scan line.

Note that a capacitor may be provided between the liquid crystal element and a wiring functioning as a signal line. Figure 2
By providing the capacitor 566 as shown in FIG. 1, the voltage applied to the liquid crystal element can be made different. Therefore, the first wiring 560 and the third wiring 562 in FIG. 10 can be combined into one.

Note that the position at which the capacitive element is additionally disposed is not limited to the position between the fourth liquid crystal element and the signal line, and as shown in FIG. 22, the capacitive element between the other liquid crystal element and the signal line (For example, a capacitor 565) may be provided. Also in this case, a plurality of signal lines can be combined into one.

As described above, the number of liquid crystal elements per pixel can be four, and the number of liquid crystal elements per pixel can be further increased. By increasing the number of liquid crystal elements per pixel, various alignment states can be provided, and a liquid crystal display having a wider viewing angle can be provided.

An example of a top view of a pixel of a liquid crystal display device to which the present invention is applied is shown in FIG. Further, FIG. 33 shows a circuit diagram of FIG. 32 and 33 use the same reference numerals for corresponding parts.

The pixel 1000 shown in FIG.
The hatch pattern of the third wiring 1013 is shown. A first insulating film (not shown), a semiconductor film on the first insulating film, and a second conductive layer (first wiring 1) on the semiconductor film.
Shown by the hatch pattern of 011. Is provided, a second insulating film (not shown) is provided on the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1003) is provided on the second insulating film. ) Is provided.

In FIG. 33, a pixel 1000 includes a first switch 1001 and a second switch 100.
2, the first liquid crystal element 1003, the second liquid crystal element 1004, and the third liquid crystal element 1005.
, A fourth liquid crystal element 1006, a first capacitance element 1007, a second capacitance element 1008, a third capacitance element 1009, a fourth capacitance element 1010, and a fifth capacitance element 1016;
And a sixth capacitive element 1017.

The first wiring 1011 is connected to the fourth liquid crystal element 1006, the first electrode of the first capacitor element 1007, and the first electrode of the second capacitor element 1008 through the first transistor 1001. . The second wiring 1012 includes the first liquid crystal element 1003 and the fourth capacitor element 1010.
The second transistor 1002 is connected to the first electrode of the second capacitor and the first electrode of the third capacitor 1009. The second electrode of the second capacitor 1008 is a third capacitor 100.
, A first electrode of the fifth capacitor element 1016, and a first electrode of the second liquid crystal element 1004.
, The first electrode of the sixth capacitor element 1017, and the first electrode of the third liquid crystal element 1005. The second electrode of the first capacitor element 1007 and the second electrode of the sixth capacitor element 1017 are connected to a fifth wiring 1015. The second electrode of the fifth capacitor 1016 and the second electrode of the fourth capacitor 1010 are connected to a fourth wiring 1014.

Note that in FIG. 33, a storage capacitor is provided for each of all the liquid crystal elements in FIG. That is, it can be said that FIG. 11 and FIG. 16 are combined. Therefore, FIG. 33 can apply the same configuration as that of FIG. That is, the wiring functioning as a capacitance line may be shared with the common electrode as shown in FIG. 50, the switch can be replaced with a transistor, and an n-channel transistor can be used as the transistor. A channel type may be used.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

The first wiring 1011 and the second wiring 1012 function as signal lines. Therefore, the first
Usually, an image signal is supplied to the wiring 1011 and the second wiring 1012 of FIG. However, it is not limited to this. A constant signal may be supplied regardless of the image. Third wiring 10
13 functions as a scanning line. The fourth wiring 1014 and the fifth wiring 1015 function as capacitance lines.

By providing the pixel as shown in the top view shown in FIG. 32, each liquid crystal element can have various alignment states, and a liquid crystal display device having a wider viewing angle can be provided.

Although this embodiment mode describes only the case where the conductivity types of all the transistors provided in one pixel are the same, the present invention is not limited to this. That is, transistors provided in one pixel may have different conductivity types.

Furthermore, the type of the transistor in this embodiment is not particularly limited, and various types can be used. Therefore, a thin film transistor (TFT) using a crystalline semiconductor film, a thin film transistor using a non-single crystal semiconductor film represented by amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, MOS Type transistor, junction type transistor, bipolar transistor, transistor using compound semiconductor such as ZnO or a-InGaZnO, transistor using organic semiconductor or carbon nanotube,
Other transistors can be applied. However, it is preferable to use a transistor with low off current. As a transistor with a small off current, there is a thin film transistor provided with an LDD region, a thin film transistor having a multi-gate structure, or the like. Also,
Both N-channel and P-channel types may be used to make a CMOS type switch.

Although the present embodiment has been described using various figures, some or all of the contents described in each figure may be applied to some or all of the contents described in another figure. And combinations,
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, by combining other parts for each part, more configurations can be considered,
The description of the present embodiment does not disturb this.

Similarly, part or all of the contents described in each drawing of the present embodiment may be applied to, combined with or replaced with part or all of the contents described in the drawing of another embodiment. Etc. can be done freely. Furthermore, in the drawings of the present embodiment, by combining the parts of the other embodiments with respect to the respective parts, more drawings can be considered to be configurations, and the description of the present embodiment does not prevent this. .

In the present embodiment, when some or all of the contents described in the other embodiments are embodied, when some modification is added, some modification is performed, and when it is improved, When described in detail, when applied, an example is shown for the case where there is a relationship. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Second Embodiment
In Embodiment 1, a new voltage is generated by dividing a voltage using a capacitor and supplied to a liquid crystal element. However, an element for creating a new voltage is not limited to a capacitive element.
An element that divides voltage, an element that converts current to voltage, a non-linear element, an element that has a resistance component,
Various elements such as an element having a capacitive component, an inductor, a diode, a transistor, a resistor, a switch, and the like can be used. Also. A desired circuit can be realized by connecting and combining these in series or in parallel. Such an element is referred to as a voltage dividing element.

The case where the capacitive element of FIG. 1 is a voltage dividing element and is generalized is shown in FIG. Therefore, the contents described in Embodiment 1 can also be applied to FIG.

FIG. 23A shows an example of the structure of a pixel circuit included in the liquid crystal display device of the present invention. The pixel 600 includes a first switch 601, a second switch 602, and a first liquid crystal element 6.
03, a second liquid crystal element 604, a third liquid crystal element 605, and a first voltage dividing element 606;
And a second voltage dividing element 607.

The first wiring 608 is connected to the first electrode of the first liquid crystal element 603 and one end of the first voltage dividing element 606 through the first switch 601. The second wiring 609 is connected to the first electrode of the second liquid crystal element 604 and one end of the second voltage dividing element 607 through a second switch. The first voltage dividing element 606 and the second voltage dividing element 607 are connected in series, and the first electrode of the third liquid crystal element 605 is between the first voltage dividing element 606 and the second voltage dividing element 607. It is connected to the.

The second electrodes of the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 are connected to a common electrode.

FIG. 23B shows the case where an n-channel transistor is used as a switch. Figure 23
In (B), the gates of the first switch 601N and the second switch 602N are connected to the third wiring 610. The third wiring 760 functions as a scan line.

In FIG. 26 as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a p-channel transistor may be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

The first wiring 608 and the second wiring 609 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 608 and the second wiring 609. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 610 functions as a scan line.

Note that the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 have transmittances in accordance with the video signal.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Not only capacitive elements but various elements can be used as the first voltage dividing element 606 and the second voltage dividing element 607. For example, an element that divides voltage, an element that converts current to voltage, a non-linear element, an element that has a resistance component, an element that has a capacitance component, an inductor, a diode, a transistor, a resistance element, a switch, etc. it can. FIG. 30 illustrates an example of a voltage dividing element.

First, as illustrated in FIGS. 30J and 30K, an n-channel transistor and a p-channel transistor can be used.

FIG. 30A shows a diode-connected N-channel transistor. Figure 30 (B
Is the reverse of the connection direction of FIG. 30 (A). FIG. 30 (C) is a cross-sectional view of FIG.
The elements shown in A) and FIG. 30 (B) are connected in parallel. FIGS. 30D and 30E are obtained by replacing the N-channel transistors of FIGS. 30A and 30B with P-channel transistors. P-channel transistors may be connected in parallel as in FIG. Alternatively, as shown in FIG. 30F, a p-channel transistor and an n-channel transistor may be connected in parallel.

FIGS. 30G and 30L are voltage dividing elements in which a resistive element and a capacitive element are connected in series or in parallel.

In FIGS. 30H and 30I, the resistive element and the P-channel transistor or the N-channel transistor are connected in series.

Wirings to which the gates of the transistors illustrated in FIGS. 30H, 30I, 30J, and 30K are connected are not particularly limited. It may be connected to a scan line, a capacitor line, or a signal line. Also,
The pixel may be connected to a scan line or the like in a row adjacent to the pixel. By controlling the potential of the gate, the resistance value of the voltage dividing element can be controlled.

FIGS. 30M and 30N show diodes. Although there are various types of diodes, diodes that can be used as voltage dividing elements are not particularly limited. For example, PN type, PI
A diode of N type, Schottky type, MIM type, MIS type or the like can be used. Furthermore, as shown in FIG. 30O, two diodes may be connected in parallel in opposite directions.

Furthermore, an inductor element shown in FIG. 30 (P) may be used, or a resistance element may be used as shown in FIG. 30 (Q). As the resistance element, one having a variable resistance value may be used as shown in FIG.

Therefore, in the configuration described in Embodiment 1, a capacitive element can be replaced with a voltage dividing element shown in FIG. 30 to form a new circuit. Therefore, the contents described in Embodiment 1 can be applied to FIG. 23 and a circuit in which a capacitor is replaced with a voltage divider.

Circuit diagrams in which the voltage dividing element 606 and the voltage dividing element 607 shown in FIG. 23 are replaced with various elements shown in FIG. 30 are shown in FIGS. Therefore, in FIGS. 36 to 48, the same configuration as that in FIG. 1 can be applied. That is, as shown in FIG. 7, the first electrode of some or all of the liquid crystal elements may be connected to a capacitor line. The capacitance line may be shared with the common electrode as shown in FIG. The switch can be replaced with a transistor, and the transistor may be an n-channel transistor or a p-channel transistor. When using a transistor, the gate of each transistor may be connected to the same scan line or may be connected to different scan lines. Further, as shown in FIG. 11, the liquid crystal element may be divided into a plurality. A plurality of signal lines may be provided, or may be integrated as shown in FIG. Furthermore, FIG. 2 and FIG.
As shown in 2 and the like, the voltage dividing element may be appropriately disposed at an appropriate position.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

Note that the resistance value of the voltage dividing element may not be constant, and may be set so as to be different depending on time or pixel. In order to change the resistance value, the voltage dividing element may have a transistor. In the case of using a transistor, the potential of the gate may be changed depending on time or pixel in the transistor.

Note that in the case where a voltage dividing element is connected between liquid crystal elements, charges may leak between the liquid crystal elements when the connection between the signal line and the liquid crystal element is turned off. In order to prevent charge leakage, a voltage dividing element and a switch may be connected in series and connected between liquid crystal elements. An example in that case is shown in FIG. The connection between the voltage dividing element and the switch may be reversed.

Note that although one voltage divider and one switch are provided between the liquid crystal elements, the present invention is not limited to this. You may arrange two or more. The contents described in Embodiment 1 and FIG. 23 can also be applied to FIG.

The pixel 650 includes a first switch 651, a second switch 652, and a first liquid crystal element 6.
53, a second liquid crystal element 654, a third liquid crystal element 655, and a first voltage dividing element 656;
A second voltage dividing element 657, a third switch 658, and a fourth switch 659 are provided.

The first wiring 660 is connected to the first electrode of the first liquid crystal element 653 and one end of the third switch 658 through the first switch 651. The second wiring 661 is connected to the first electrode of the second liquid crystal element 654 and one end of the fourth switch 659. The third switch 658 and the fourth switch 659 are connected in series, and the first voltage dividing element 656 and the second voltage divider connected in series between the third switch 658 and the fourth switch 659 An element 657 is provided, and a first electrode of the third liquid crystal element 655 is a first voltage dividing element 656 and a second voltage dividing element 6.
Connected between 57

The second electrodes of the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 are connected to a common electrode.

The first wiring 660 and the second wiring 661 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 660 and the second wiring 661. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 662 functions as a scan line.

The first switch 651 and the second switch 652 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, in the case of using a transistor as the first switch 651 and the second switch 652, the polarity may be a p-channel type or an n-channel type.

The third switch 658 and the fourth switch 659 are not particularly limited as long as they function as switches. For example, a transistor can be used. Third switch 65
The polarity of the transistor used for the eighth and fourth switches 659 may be P channel type or N
It may be a channel type.

FIG. 24B shows the case where an n-channel transistor is used as a switch. Figure 24.
In (B), the gates of the first switch 651N and the second switch 652N are connected to the third wiring 662. The third wiring 662 functions as a scan line.

Also in FIG. 24, as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a P-channel transistor can be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

Note that the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 have transmittances in accordance with the video signal.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Next, FIGS. 23 and 24 show specific examples in the case where the voltage dividing element of FIG. 30 is applied. First, the case of using FIG. 30J will be described with reference to FIG. The gate is connected to the scan line. FIGS. 23 and 24 correspond to those in which the first capacitive element 106 and the second capacitive element 107 in FIG. 1 are replaced with transistors. Therefore, Embodiment 1, FIG.
The contents described in 3 and FIG. 24 can be applied to FIG.

The pixel 700 includes a first switch 701, a second switch 702, and a first liquid crystal element 7.
03, the second liquid crystal element 704, the third liquid crystal element 705, and the first transistor 706
And a second transistor 707.

The first wiring 708 is a first electrode of the first liquid crystal element 703 and the first transistor 706.
The first switch 701 is connected to one of the source and the drain of the The second wiring 709 is connected to one of the first electrode of the second liquid crystal element 704 and one of the source and the drain of the second transistor 707 through the second switch 702. The other of the source and the drain of the first transistor 706 and the other of the source and the drain of the second transistor 707 are connected to the first electrode of the third liquid crystal element 705. The first and second transistors are connected to the third wiring 710.

The second electrodes of the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 are connected to a common electrode.

The first wiring 708 and the second wiring 709 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 708 and the second wiring 709. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 710 functions as a scan line.

The first switch 701 and the second switch 702 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, the case where a transistor is used as the first switch 701 and the second switch 702 will be described. When a transistor is used, its polarity may be P-channel or N-channel.

FIG. 25B shows the case where an n-channel transistor is used as a switch. Figure 25.
In (B), the gates of the first switch 701N and the second switch 702N are connected to the third wiring 710. The third wiring 710 functions as a scan line.

In FIG. 25 as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a p-channel transistor may be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

The first transistor 706 and the second transistor 707 may function as a voltage dividing element, and the polarity of the first transistor 706 and the second transistor 707 may be a p-channel transistor or an n-channel transistor.

Next, the operation of the pixel 700 will be described. First, it is selected by the third wiring 710,
The first switch 701 and the second switch 702 are turned on. Then, the first wiring 7
Video signals are supplied from the line 08 and the second line 709. At the same time as the first and second switches, the first transistor 706 and the second transistor 707 are also turned on. Therefore, the first wiring 708 and the second wiring 709 are connected to each other through the transistor. And since a transistor has a resistance component (on resistance), it will be divided by each transistor. At this time, when the on resistances of the first transistor 706 and the second transistor 707 are high, much of the voltage is applied to the transistors.

Therefore, a potential substantially equal to the potential of the first wiring 708 is applied to the pixel electrode of the first liquid crystal element 703. More precisely, from the potential of the first wiring 708, the first switch 701
A potential corresponding to the voltage drop is applied to the pixel electrode of the first liquid crystal element 703. Similarly, a potential approximately equal to the potential of the second wiring 709 is applied to the pixel electrode of the second liquid crystal element 704. More precisely, a potential corresponding to a voltage drop in the second switch 702 from the potential of the second wiring 709 is applied to the pixel electrode of the second liquid crystal element 704.

Then, the potential of the pixel electrode of the first liquid crystal element 703 and the potential of the pixel electrode of the second liquid crystal element 704 are divided by the first transistor 706 and the second transistor 707 to form the third liquid crystal. The pixel electrode of the element 705 is supplied. Temporarily, the first transistor 706
When the on resistances of the second transistor 707 and the second transistor 707 are approximately equal, the third liquid crystal element 70
The potential of the pixel electrode of 5 and the potential of the pixel electrode of the first liquid crystal element 703 and the potential of the second liquid crystal element
It is in the middle of the potentials of the four pixel electrodes.

Note that when the on resistances of the first switch 701, the second switch 702, the first transistor 706, the second transistor 707, and the like are small, a large current flows.
Therefore, it is desirable that the first transistor 706 and the second transistor 707, which are transistors for voltage division, have high on-resistance. For example, the first transistor 70
The first switch 701 or the second switch 70 than the sixth or second transistor 707
It is desirable that the ratio (W / L) of the channel width W to the channel length L be smaller in the case of 2. For example, the channel length L may be increased by providing the first transistor 706 or the second transistor 707 with a multi-gate structure.

Note that it is preferable that the first transistor 706 and the second transistor 707 have approximately the same on-resistance. The divided voltages are at an intermediate potential because the on resistances are approximately equal. If there is a difference in on resistance, it will be biased to one of the potentials, evenly,
This is because the liquid crystal element can not be controlled. For example, it is desirable that the ratio (W / L) of the channel width W to the channel length L of the first transistor 706 and the second transistor 707 be approximately equal. However, it is not limited to this.

When the third wiring 710 is in a non-selected state, the first switch 701 and the second switch 70
2. The first transistor 706 and the second transistor 707 are turned off. Then,
The voltage supplied to each liquid crystal element is maintained. By operating in this manner, voltages applied to the respective liquid crystal elements can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. The timing of turning each transistor on and off, the potential of the signal line, and the like can be controlled by various methods.

Note that since the first transistor 706 and the second transistor 707 are also turned off, charge does not leak between the liquid crystal elements. Therefore, it can be said that the first transistor 706 and the second transistor 707 are realized by one element as the voltage dividing element and the switch in FIG.

Note that the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 have transmittances in accordance with the video signal.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Note that the first transistor 706 and the second transistor 707 are not limited to the illustrated structure. For example, one or both of the first transistor 706 and the second transistor 707 may have a multi-gate structure. With the multi-gate structure, the resistances of the first transistor 706 and the second transistor 707 can be easily adjusted as compared with the single-gate structure. Furthermore, the on resistances of the first transistor 706 and the second transistor 707 can be larger than those in the single gate structure.

Note that the resistance values of the first transistor 706 and the second transistor 707 may not be constant, and the resistance values may be set to be different depending on time or a pixel. In order to change the resistance value, the first transistor 706 and the second transistor 70 which function as voltage dividing elements are used.
7, the gate potential may be changed with time or with pixels.

Although FIGS. 23 to 25 do not clearly show the storage capacity, as described in FIG.
A holding capacity may be arranged. As an example, FIG. 26 shows the case where a storage capacitor is arranged in each liquid crystal element in FIG.

In FIG. 26, the pixel 750 includes a first switch 751 and a second switch 752.
A first liquid crystal element 753, a second liquid crystal element 754, a third liquid crystal element 755, a first transistor 756, a second transistor 757, a first capacitor element 762, and a second capacitor The element 763 and a third capacitor 764 are included.

The first wiring 758 is connected to the first electrode of the first liquid crystal element 753, one of the source and the drain of the first transistor 756, and the first electrode of the third capacitor 764.
Connected through one. The second wiring 759 is connected to the first electrode of the second liquid crystal element 754, one of the source and the drain of the second transistor 757, and the first electrode of the first capacitor 762. The other of the source or the drain of the first transistor 756 and the second
The other of the source and the drain of the transistor 757 is connected to the first electrode of the third liquid crystal element 755 and the first electrode of the second capacitor 763. The first and second switches and the first and second transistors are connected to the third wire 760. First capacitive element 76
Second electrodes of the second and third capacitors 763 and 764 are connected to the fourth wiring 761.

The second electrodes of the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 are connected to a common electrode.

The first wiring 758 and the second wiring 759 function as signal lines. Third wire 760
Functions as a scan line. The fourth wiring 761 functions as a capacitor line.

The first switch 751 and the second switch 752 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 751
When a transistor is used as the second switch 752, its polarity may be a p-channel transistor or an n-channel transistor.

FIG. 26B shows the case where an n-channel transistor is used as a switch. Figure 26.
In (B), the gates of the first switch 751N and the second switch 752N are connected to the third wiring 760. The third wiring 760 functions as a scan line.

In FIG. 26 as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a p-channel transistor may be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

The first transistor 756 and the second transistor 757 may function as a voltage dividing element, and the polarity of the first transistor 756 and the second transistor 757 may be P-channel or N-channel.

Note that the transmittance of the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 corresponds to the video signal.

Note that the resistance values of the first transistor 756 and the second transistor 757 may not be constant, and the resistance values may be set to be different depending on time or a pixel. In order to change the resistance value, in the first transistor 756 and the second transistor 757 which function as resistances, the potential of the gate may be changed with time or with pixels.

As described above, each liquid crystal element can have different alignment states, and the viewing angle can be widened.

Although the gates of the first and second transistors are connected to the scan line in FIGS. 25 and 26, the invention is not limited to this. Another wire may be arranged and connected to the wire. Alternatively, a plurality of separate wirings may be provided to connect the gates of the first transistor and the second transistor to different wirings, respectively. FIG. 27B shows the case where the gates of the first transistor and the second transistor are connected to the fourth wiring in FIG. 27A. In this way, the potentials of the gates of the first and second transistors can be controlled independently of the first and second switches, and the on-resistances of the first and second transistors can be controlled. Can be easily controlled. For example, in the case of inputting a video signal of the negative electrode (video signal is lower than the potential of the common electrode), the gate-source voltage of the first and second transistors becomes very large. Therefore, the ON resistances of the first transistor and the second transistor are reduced, and a large amount of current flows, which may increase power consumption. Therefore, when dividing the voltage by turning on the first and second transistors, the video signal of the negative electrode is input compared to the case where the video signal of the positive electrode (video signal is higher than the potential of the common electrode) is input. In the case of input, the gate potentials of the first and second transistors are made lower. As a result, it is possible to prevent a large amount of current from flowing away.

The pixel 800 includes a first switch 801, a second switch 802, a first transistor 803, a second transistor 804, a first liquid crystal element 805, and a second liquid crystal element 8.
And a third liquid crystal element 807.

The first wiring 808 is a first electrode of the first liquid crystal element 805 and the first transistor 80.
A first switch 801 is connected to one of the source and the drain 3. The second wiring 809 is connected to the second switch 802 to one of the first electrode of the second liquid crystal element 806 and the source or the drain of the second transistor 804. First transistor 80
The other of the three sources or the drain and the other of the source or the drain of the second transistor 804 is connected to the first electrode of the third liquid crystal element 807. First switch 801 and second
The gate of the switch 802 is connected to the third wiring 810. First transistor 8
The gates of the third transistor 804 and the second transistor 804 are connected to the fourth wiring 811.

The second electrodes of the first liquid crystal element 805, the second liquid crystal element 806, and the third liquid crystal element 807 are connected to a common electrode.

The first wiring 808 and the second wiring 809 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 808 and the second wiring 809. However, it is not limited to this. Regardless of the image. A constant signal may be supplied. The third wiring 810 and the fourth wiring 811 function as scan lines.

The first switch 801 and the second switch 802 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 801
When a transistor is used as the second switch 802, its polarity may be a p-channel or an n-channel.

FIG. 27B shows the case where an n-channel transistor is used as a switch. Figure 27.
In (B), the gates of the first switch 801N and the second switch 802N are connected to the third wiring 810. The third wiring 760 functions as a scan line.

In FIG. 27 as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a p-channel transistor may be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

The first transistor 803 and the second transistor 804 may function as a voltage dividing element, and the polarity of the first transistor 803 and the second transistor 804 may be a p-channel transistor or an n-channel transistor.

Note that when the first transistor 803 and the second transistor 804 are turned on to function as a voltage dividing element, the first transistor 803 and the second transistor 8
It is desirable to operate 04 in the linear region. This is because the on resistances of the first transistor 803 and the second transistor 804 have appropriate values.

Note that the timing at which the first switch 801 and the second switch 802 are turned on and off is preferably substantially the same as the timing at which the first transistor 803 and the second transistor 804 are turned on and off. However, it is not limited to this. First switch 80
When the first and second switches 802 are turned on, the first transistor 80 is slightly delayed.
The third and second transistors 804 may be turned on. Thus, the period during which the first wiring 808 and the second wiring 809 are connected can be shortened. Therefore, charge can be easily input to the first liquid crystal element 805 and the second liquid crystal element 806.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Next, an example in which the content described in Embodiment 1 is applied to FIG. 25 is shown. FIG. 31 shows an example of a circuit in which a capacitive element is replaced by a voltage dividing element shown in FIG. FIG. 28 shows the case where the first capacitive element and the second capacitive element of FIG. 2 are replaced with FIG. At this time, the gate of the transistor of the voltage dividing element is connected to the scan line. However, it is not limited to this. Therefore, the contents described in Embodiment 1 can also be applied to FIG.

The pixel 850 includes a first switch 851, a second switch 852, and a first liquid crystal element 8.
53, a second liquid crystal element 854, a third liquid crystal element 855, and a first transistor 856.
, A second transistor 857, and a capacitor 861.

The first wiring 858 is a first electrode of the first liquid crystal element 853 and the first transistor 85.
6 is connected via the first switch 851 to one of the source and the drain of the transistor 6. The second wiring 859 is connected to one of the first electrode of the second liquid crystal element 854 and the source or the drain of the second transistor 857. The other of the source and the drain of the first transistor 856 and the other of the source and the drain of the second transistor 857 are connected to the first electrode of the capacitor 861, and the second electrode of the capacitor 861 is a third liquid crystal. It is connected to the first electrode of the element 855. The first and second transistors are connected to the third wiring 860.

The second electrodes of the first liquid crystal element 853, the second liquid crystal element 854, and the third liquid crystal element 855 are connected to a common electrode.

The first wiring 858 and the second wiring 859 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 858 and the second wiring 859. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wire 860 functions as a scan line.

The first switch 851 and the second switch 852 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 85
In the case of using a transistor as the first and second switches 852, the polarity may be a p-channel type or an n-channel type.

FIG. 28B shows the case where an n-channel transistor is used as a switch. Figure 28.
In (B), the gates of the first switch 851N and the second switch 852N are connected to the third wiring 760. The third wire 860 functions as a scan line.

In FIG. 28 as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a p-channel transistor may be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

The first transistor 856 and the second transistor 857 may function as a voltage dividing element, and the polarity of the first transistor 856 and the second transistor 857 may be a p-channel transistor or an n-channel transistor.

With the circuit configuration shown in FIG. 28, the potential of the first electrode of the third liquid crystal element 855 can be reduced by the amount of the capacitor 861 as in the case of FIG.

Note that the first transistor 856 and the second transistor 857 are not limited to the illustrated structure. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure.

Note that the resistance values of the first transistor 856 and the second transistor 857 may not be constant, and the resistance values may be set to be different depending on time or a pixel. In order to change the resistance value, the potential of the gate of the first transistor 856 and the second transistor 857 which function as resistors may be changed with time or by pixels.

Note that the first transistor 856 and the second transistor 857 are not limited to the illustrated structure. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure. With the multi-gate structure, the on resistances of the first transistor 856 and the second transistor 857 can be larger than those in the single gate structure.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Although the case of using two voltage dividing elements is described in FIGS. 23 to 28, the present invention is not limited to this. It is possible to further improve the viewing angle characteristics by using more voltage dividing elements. As one example, when a voltage dividing element is added to FIG.
FIG. 29 shows an example of a circuit in which two voltage dividing elements shown in FIG. 30J are connected in series and a capacitive element is replaced.

In FIG. 29, a pixel 900 includes a first switch 901, a second switch 902, a first liquid crystal element 903, a second liquid crystal element 904, a third liquid crystal element 905, and a fourth liquid crystal element. And 906, a first transistor 907, a second transistor 908, and a third transistor 909.

The first wiring 910 is a first electrode of the first liquid crystal element 903 and a first transistor 907.
The first switch 901 is connected to one of the source and the drain of the The second wiring 911 is connected to one of the first electrode of the second liquid crystal element 904 and one of the source and the drain of the third transistor 909 through the second switch 902. The other of the source and the drain of the first transistor 907 is connected to the first electrode of the third liquid crystal element 905 and the other of the source and the drain of the second transistor 908. Third transistor 90
The other of the source and the drain of 9 is connected to the first electrode of the fourth liquid crystal element 906 and one of the source or the drain of the second transistor 908. First switch 901, second
, And the gates of the first and second transistors are connected to the third wiring 912.

The second electrodes of the first liquid crystal element 903, the second liquid crystal element 904, the third liquid crystal element 905, and the fourth liquid crystal element 906 are connected to a common electrode.

The first wiring 910 and the second wiring 911 function as signal lines. Therefore, an image signal is usually supplied to the first wiring 910 and the second wiring 911. However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 912 functions as a scan line.

The first switch 901 and the second switch 902 are not particularly limited as long as they function as switches. For example, a transistor can be used. First switch 901
When a transistor is used as the second switch 902, its polarity may be a p-channel transistor or an n-channel transistor.

FIG. 28B shows the case where an n-channel transistor is used as a switch. Figure 28.
In (B), the gates of the first switch 901N and the second switch 902N are connected to the third wiring 912. The third wiring 912 functions as a scan line.

In FIG. 26 as in FIG. 1 etc., two scanning lines may be provided as shown in FIG. 49, or a p-channel transistor may be used as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switch is not limited to the transistor. Various elements such as diodes can be used as switches.

The first to third transistors may function as voltage dividing elements, and the polarity of the first to third transistors may be P-channel or N-channel. In FIG. 28, an n-channel transistor is used.

As shown in FIG. 29, only one of the first and second transistors in FIG. 25 may have a multi-gate structure.

Although the gates of the first to third transistors are connected to the third wiring that controls the first and second switches, the present invention is not limited to this, and the description will be made with reference to FIG. As described above, the gates of the first to third transistors may be connected to a wiring different from the third wiring that controls the first and second switches.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

Note that the resistance values of the first transistor 907, the second transistor 908, and the third transistor 909 may not be constant, and the resistance values may be set to be different depending on time or a pixel. In order to change the resistance value, the potential of the gate may be changed depending on time or a pixel in the third to fifth transistors functioning as a resistance. Note that the first transistor 856 and the second transistor 857 are not limited to the illustrated structure.

As described above, the viewing angle can be widened by providing different alignment states in each liquid crystal element.

An example of a top view of a pixel of a liquid crystal display device to which the present invention is applied is shown in FIG. Further, FIG. 35 shows a circuit diagram of FIG. 34 and FIG. 35 use the same reference numerals for corresponding parts.

The pixel 1020 illustrated in FIG. 34 includes a first conductive layer (wiring that serves as a scan line and a capacitor line).
The hatch pattern of the third wiring 1033 is shown. A first insulating film (not shown), a semiconductor film on the first insulating film, and a second conductive layer (first wiring 1) on the semiconductor film.
The hatch pattern of 031 is shown. , A second insulating film (not shown) is provided on the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1023) is provided on the second insulating film. ) Is provided.

In FIG. 35, a pixel 1020 includes a first transistor 1021 which is a first switch.
A second transistor 1022 which is a second switch, and a first liquid crystal element 1023;
The second liquid crystal element 1024, the third liquid crystal element 1025, the fourth liquid crystal element 1026, the first capacitance element 1027, the second capacitance element 1030, the third capacitance element 1036, and the fourth capacitance element 1036
, A third transistor 1028, a fourth transistor 1029, and a fifth transistor 1039.

The first wiring 1031 is connected to the second wiring 1032 through the first to fifth transistors connected in series. The first to fourth are provided between each of the first to fifth transistors.
The first electrode of the liquid crystal element is connected. The first to fourth liquid crystal elements are connected to a first electrode of a capacitor whose second electrode is connected to the fourth wiring 1034 or the fifth wiring 1035. The gates of the first to fifth transistors are connected to a third wiring 1033.

Note that in FIG. 35, all the capacitive elements functioning as voltage dividing elements in FIG. 9B are replaced with transistors, and a storage capacitance is provided in each of all the capacitive elements. That is, FIG.
16 and FIG. 16 can be said to be combined. Therefore, in FIG. 35, the same configuration as that of FIG. 1 can be applied. That is, the wiring functioning as a capacitance line may be shared with the common electrode as shown in FIG. 50, the switch can be replaced with a transistor, and an n-channel transistor can be used as the transistor. A channel type may be used.

The first wiring 1031 and the second wiring 1032 function as signal lines. Therefore, the first
Usually, an image signal is supplied to the wiring 1031 and the second wiring 1032 of FIG. However, it is not limited to this. A constant signal may be supplied regardless of the image. Third wiring 10
33 functions as a scanning line. The fourth wiring 1034 and the fifth wiring 1035 function as capacitance lines.

By providing the pixel as shown in the top view shown in FIG. 32, each liquid crystal element can have various alignment states, and a liquid crystal display device having a wider viewing angle can be provided.

Although the present embodiment has been described using various figures, some or all of the contents described in each figure may be applied to some or all of the contents described in another figure. And combinations,
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, by combining other parts for each part, more configurations can be considered,
The description of the present embodiment does not disturb this.

Similarly, part or all of the contents described in each drawing of the present embodiment may be applied to, combined with or replaced with part or all of the contents described in the drawing of another embodiment. Etc. can be done freely. Furthermore, in the drawings of the present embodiment, by combining the parts of the other embodiments with respect to the respective parts, more drawings can be considered to be configurations, and the description of the present embodiment does not prevent this. .

In the present embodiment, when some or all of the contents described in the other embodiments are embodied, when some modification is added, some modification is performed, and when it is improved, When described in detail, when applied, an example is shown for the case where there is a relationship. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Third Embodiment
In this embodiment mode, a structure and a manufacturing method of a transistor will be described.

51A to 51G illustrate an example of a structure and a manufacturing method of a transistor. Figure 5
1A shows an example of a structure of a transistor. 51B to 51G illustrate an example of a method for manufacturing a transistor.

Note that the structure and manufacturing method of the transistor are not limited to those illustrated in FIGS. 51A to 51G, and various structures and manufacturing methods can be used.

First, an example of a structure of a transistor is described with reference to FIG. Fig. 51 (A)
Are cross-sectional views of transistors having a plurality of different structures. Here, FIG. 51A illustrates a plurality of transistors having different structures which are juxtaposed, which is a representation for describing the structure of the transistor. It is not necessary to be juxtaposed as in A), but can be made as needed.

Next, features of each layer constituting the transistor will be described.

As the substrate 110111, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate containing stainless steel, or the like can be used. Besides, polyethylene terephthalate (PET), polyethylene naphthalate (PE)
N) It is also possible to use a substrate made of a plastic represented by polyether sulfone (PES) or a flexible synthetic resin such as acrylic. By using a flexible substrate, a semiconductor device which can be bent can be manufactured. There is no particular limitation on the area of the substrate and the shape of the substrate, as long as the substrate has flexibility, the substrate 110
If, for example, one side is 1 meter or more and a rectangular shape is used as 111, productivity can be remarkably improved. Such an advantage is a great advantage as compared with the case of using a circular silicon substrate.

The insulating film 110112 functions as a base film. An alkali metal or alkaline earth metal such as Na from the substrate 110111 is provided to prevent adverse effects on the characteristics of the semiconductor device. An insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like as the insulating film 110112 It can be provided in a single layer structure or a laminated structure of these.
For example, in the case where the insulating film 110112 is provided to have a two-layer structure, a silicon nitride oxide film may be provided as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. As another example, in the case where the insulating film 110112 is provided in a three-layer structure, a silicon oxynitride film is provided as a first insulating film;
A silicon nitride oxide film may be provided as a second insulating film, and a silicon oxynitride film may be provided as a third insulating film.

The semiconductor layers 110113, 110114, and 110115 can be formed using an amorphous (amorphous) semiconductor or a semi-amorphous semiconductor (SAS). Alternatively, a polycrystalline semiconductor layer may be used. SAS is a semiconductor having an intermediate structure of amorphous and crystal structure (including single crystal and polycrystal), a free energy stable third state, and has short-range order. It contains crystalline regions with lattice distortion. At least in some areas in the membrane,
A crystal region of 0.5 to 20 nm can be observed, and in the case of containing silicon as a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) which are considered to be derived from the silicon crystal lattice are observed. At least 1 atomic% or more of hydrogen or halogen is included as compensation for dangling bonds. SAS is formed by glow discharge decomposition (plasma CVD) of a source gas. As the material gas, SiH ₄ and others, Si ₂ H ₆ , SiH ₂ Cl ₂ and SiHC
It is possible to use l ₃ , SiCl ₄ , SiF ₄ or the like. Alternatively, GeF ₄ may be mixed. This material gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is approximately in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As the impurity element in the film, impurity is 1 × ¹⁰ 20 cm of atmospheric constituents, such as carbon ^- desirably set to lower than or equal to 1, in particular, oxygen concentration is 5 × ¹⁰ 19 / cm ³ or less, preferably 1 × 10 ¹⁹ / c
m ³ or less. Here, an amorphous semiconductor layer is formed of a material (for example, SixGe1-x or the like) whose main component is silicon (Si) using a known method (a sputtering method, an LPCVD method, a plasma CVD method, or the like). Crystallization of the amorphous semiconductor layer by a known crystallization method such as laser crystallization method, RTA or thermal crystallization method using furnace annealing, or thermal crystallization method using a metal element promoting crystallization Let

The insulating film 110116 is made of silicon oxide (SiOx), silicon nitride (SiN
A single layer structure of an insulating film containing oxygen or nitrogen such as SiO x N y) (x> y), silicon nitride oxide (SiN x O y) (x> y), or a stacked structure of these can be provided.

The gate electrode 110117 can have a single-layer conductive film or a stacked structure of two or three conductive films. A known conductive film can be used as a material of the gate electrode 110117. For example, a single film of an element such as tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), or silicon (Si), or a nitride film of the element (typically Tantalum nitride film, tungsten nitride film, titanium nitride film), or
An alloy film (typically, Mo-W alloy, Mo-Ta alloy) in which the above elements are combined, a silicide film of the above elements (typically, a tungsten silicide film, a titanium silicide film) or the like can be used. Note that the single film, the nitride film, the alloy film, the silicide film, and the like described above may be used as a single layer or may be stacked.

The insulating film 110118 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOx Ny) (x> y) by a known means (sputtering method, plasma CVD method, etc.)
An insulating film containing oxygen or nitrogen, such as silicon nitride oxide (SiN x O y) (x> y),
It can be provided in a single layer structure of a film containing carbon such as diamond like carbon (carbon), or a laminated structure of these.

The insulating film 110119 is a siloxane resin, or silicon oxide (SiOx), silicon nitride (
SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy)
Insulating films having oxygen or nitrogen such as (x> y), carbon containing films such as DLC (diamond like carbon), or epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, acrylic or the like It can be provided in a single layer or a laminated structure made of an organic material. Note that the siloxane resin corresponds to a resin containing a Si-O-Si bond.
Siloxane has a skeletal structure formed by the bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used. It is also possible to directly provide the insulating film 110119 so as to cover the gate electrode 110117 without providing the insulating film 110118.

The conductive film 110123 is made of Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, M
A single film of an element such as n, a nitride film of the above element, an alloy film combining the above elements, a silicide film of the above element, or the like can be used. For example, as an alloy containing a plurality of the above elements, an Al alloy containing C and Ti, an Al alloy containing Ni,
An Al alloy containing C and Ni, an Al alloy containing C and Mn, or the like can be used. For example, in the case of a stacked structure, Al can be sandwiched by Mo, Ti, or the like. This can improve the resistance of Al to heat and chemical reaction.

Next, features of each structure are described with reference to cross-sectional views of the transistors having a plurality of different structures illustrated in FIG. 51A.

The 110101 is a single drain transistor and can be manufactured by a simple method.
There is an advantage that the manufacturing cost is low and the yield can be high. Here, the semiconductor layer 11011
3 and 110115 have different concentrations of impurities, and the semiconductor layer 110113 is used as a channel region, and the semiconductor layer 110115 is used as a source region and a drain region. in this way,
By controlling the amount of impurities, the resistivity of the semiconductor layer can be controlled. Semiconductor layer and conductive film 110
The state of electrical connection with 123 can be brought close to the ohmic connection. Note that as a method of separately forming semiconductor layers having different amounts of impurities, a method of doping an impurity into the semiconductor layer can be used by using the gate electrode 110117 as a mask.

110102 is a transistor having a taper angle of a certain level or more in the gate electrode 110117, and can be manufactured by a simple method, so that there is an advantage that the manufacturing cost is low and the yield can be increased. Here, the semiconductor layers 110113, 110114, and 110115 have different impurity concentrations, and the semiconductor layer 110113 is a channel region, the semiconductor layer 110114 is a lightly doped drain (LDD) region, and the semiconductor layer 110.
115 is used as a source region and a drain region. Thus, the resistivity of the semiconductor layer can be controlled by controlling the amount of impurities. The state of electrical connection between the semiconductor layer and the conductive film 110123 can be closer to ohmic connection. Since the LDD region is provided, a high electric field is unlikely to be applied to the inside of the transistor, and deterioration of the element due to hot carriers can be suppressed. As a method of separately forming semiconductor layers having different amounts of impurities, the gate electrode 110 can be used.
A method of doping an impurity into the semiconductor layer can be used by using 117 as a mask. 1
In 10102, since the gate electrode 110117 has a taper angle greater than or equal to a certain level, the concentration of the impurity that passes through the gate electrode 110117 and is doped to the semiconductor layer is made to have a gradient. It is possible to easily form the LDD region.

Reference numeral 110103 denotes a transistor in which the gate electrode 110117 includes at least two layers, and the lower gate electrode has a longer shape than the upper gate electrode. In the present specification, the shapes of the upper gate electrode and the lower gate electrode are referred to as a cap shape. Gate electrode 110
The hat shape of the shape 117 allows the LDD region to be formed without adding a photomask. As in the case of 110103, the LDD region is a gate electrode 11
The structure overlapping with 0117, especially the GOLD structure (Gate Overlapped
Call it LDD). As a method of making the shape of the gate electrode 110117 a hat shape, the following method may be used.

First, when patterning the gate electrode 110117, the lower layer gate electrode and the upper layer gate electrode are etched by dry etching to form a shape having a slope (temper) on the side surface. . Subsequently, the inclination of the upper gate electrode is processed to be close to vertical by anisotropic etching. Thereby, a gate electrode having a hat-shaped cross section is formed. Then twice,
A semiconductor layer 1101 used as a channel region by doping an impurity element.
13. A semiconductor layer 110114 used as an LDD region and a semiconductor layer 110115 used as a source electrode and a drain electrode are formed.

The LDD region overlapping the gate electrode 110117 is a Lov region, and the gate electrode 11
An LDD region not overlapping with 0117 is called a Loff region. Where Lof
Although the effect of suppressing the off current value is high in the f region, the effect of reducing the electric field in the vicinity of the drain to prevent the deterioration of the on current value due to hot carriers is low. On the other hand, although the Lov region is effective in reducing the electric field in the vicinity of the drain and preventing the deterioration of the on current value, the effect of suppressing the off current value is low. Therefore, it is preferable to manufacture a transistor having a structure in accordance with the required characteristics for each of various circuits. For example, in the case of using a semiconductor device as a display device, it is preferable to use a transistor having an Loff region in order to suppress an off current value.
On the other hand, in the transistor in the peripheral circuit, it is preferable to use a transistor having a Lov region in order to ease the electric field in the vicinity of the drain and to prevent the deterioration of the on current value.

A side wall 110121 is in contact with the side surface of the gate electrode 110117.
Is a transistor having By having the side walls 110121, a region overlapping with the side walls 110121 can be made an LDD region.

110105 is formed by doping the semiconductor layer using a mask to obtain LDD (Lof
f) A transistor in which a region is formed. By this, the LDD region can be surely formed, and the off current value of the transistor can be reduced.

110106 is formed by doping the semiconductor layer with a mask to obtain LDD (Lov
) Is a transistor in which a region is formed. By this, the LDD region can be surely formed, the electric field in the vicinity of the drain of the transistor can be relaxed, and the deterioration of the on current value can be reduced.

Next, an example of a method for manufacturing a transistor will be described with reference to FIGS.

Note that the structure and manufacturing method of the transistor are not limited to those illustrated in FIGS. 51A and 51B, and various structures and manufacturing methods can be used.

In this embodiment, the insulating film 1 is formed on the surface of the substrate 110111, on the surface of the insulating film 110112, on the surface of the semiconductor layer 110113, on the surface of 110114, and on the surface of 110115.
On the surface of the insulating film 110118 or on the surface of the insulating film 110119;
The semiconductor layer or the insulating film can be oxidized or nitrided by performing oxidation or nitridation using plasma treatment. Thus, the surface of the semiconductor layer or the insulating film is reformed by oxidizing or nitriding the semiconductor layer or the insulating film using plasma treatment, and the insulating film is formed by CVD or sputtering as compared with the insulating film. Since a more precise insulating film can be formed, it becomes possible to suppress defects such as pinholes and improve the characteristics and the like of the semiconductor device.

First, the surface of the substrate 110111 is cleaned using hydrofluoric acid (HF), alkali, or pure water.
As the substrate 110111, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate containing stainless steel, or the like can be used. Besides, polyethylene terephthalate (PET), polyethylene naphthalate (PE)
N) It is also possible to use a substrate made of a plastic typified by polyether sulfone (PES) or a flexible synthetic resin such as acrylic. Here, substrate 11
The case of using a glass substrate is shown as 0111.

Here, an oxide film or a nitride film may be formed on the surface of the substrate 110111 by oxidizing or nitriding the surface of the substrate 110111 by performing plasma treatment on the surface of the substrate 110111 (FIG. 51B). . Hereinafter, an insulating film such as an oxide film or a nitride film formed by performing plasma treatment on the surface is also referred to as a plasma-treated insulating film. In FIG. 51 (B),
The insulating film 131 is a plasma processing insulating film. Generally, when a semiconductor element such as a thin film transistor is provided on a substrate such as glass or plastic, an impurity element such as an alkali metal or alkaline earth metal such as Na contained in glass or plastic is mixed into the semiconductor element. Contamination may affect the characteristics of the semiconductor device. However, by nitriding the surface of the substrate made of glass, plastic or the like, it is possible to prevent the impurity element such as alkali metal or alkaline earth metal contained in the substrate from being mixed into the semiconductor element.

Note that in the case where the surface is oxidized by plasma treatment, oxygen atmosphere (for example, oxygen (O ₂
) Under a rare gas (containing at least one of He, Ne, Ar, Kr, and Xe), or under a rare gas atmosphere of oxygen and hydrogen (H ₂ ), or under an atmosphere of dinitrogen monoxide and a rare gas. )
Plasma treatment is performed. On the other hand, in the case where the semiconductor layer is nitrided by plasma treatment, for example, in a nitrogen atmosphere (for example, in an atmosphere of nitrogen (N ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed under an atmosphere of nitrogen and hydrogen and a rare gas, or under an atmosphere of NH ₃ and a rare gas. For example, Ar can be used as the noble gas. Alternatively, a mixed gas of Ar and Kr may be used. Therefore, the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment. For example, in the case of using Ar, the plasma processing insulating film contains Ar.

In the plasma treatment, an electron density is 1 × 10 ¹¹ cm ⁻³ or more in an atmosphere of the above gas.
It is preferable to perform the etching at an electron temperature of 0.5 ev or more and 1.5 eV or less, which is 10 ¹³ cm ⁻³ or less. Since the electron density of the plasma is high and the electron temperature near the object to be treated is low, the plasma damage to the object to be treated can be prevented. Since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or more, an oxide or nitride film formed by oxidizing or nitriding an object to be irradiated by plasma treatment is a CVD method or a sputtering method. Compared to a film formed by a method or the like, the film thickness etc. is excellent in uniformity, and a dense film can be formed. Alternatively, since the plasma electron temperature is as low as 1 eV or less, oxidation or nitridation treatment can be performed at a lower temperature as compared to conventional plasma treatment and thermal oxidation. For example, even if plasma treatment is performed at a temperature lower by 100 ° C. or more than the strain point temperature of the glass substrate, sufficient oxidation or nitridation treatment can be performed. Note that a high frequency such as microwave (2.45 GHz) can be used as a frequency for forming plasma. Note that, unless otherwise specified below, the plasma treatment is performed using the above conditions.

Note that FIG. 51B shows the case where a plasma treatment insulating film is formed by plasma treatment of the surface of the substrate 110111;
This also includes the case where the plasma processing insulating film is not formed on the surface of 1.

In FIGS. 51C to 51G, although a plasma treatment insulating film formed by plasma treatment of the surface of the processing object is not shown, in this embodiment, the substrate 11 is not shown.
0111, insulating film 110112, semiconductor layers 110113, 110114, 110115,
It also includes the case where a plasma treatment insulating film formed by performing plasma treatment is present on the surface of the insulating film 110116, the insulating film 110118, or the insulating film 110119.

Next, the insulating film 110112 is formed over the substrate 110111 by a known method (a sputtering method, an LPCVD method, a plasma CVD method, or the like) (FIG. 51C). As the insulating film 110112, silicon oxide (SiOx) or silicon oxynitride (SiOx Ny) (x> y) can be used.

Here, plasma treatment may be performed on the surface of the insulating film 110112 to oxidize or nitride the insulating film 110112, whereby a plasma treatment insulating film may be formed on the surface of the insulating film 110112. By oxidizing the surface of the insulating film 110112, the surface of the insulating film 110112 can be reformed to obtain a dense film with few defects such as pin holes. By oxidizing the surface of the insulating film 110112, a plasma-treated insulating film with a low content of N atoms can be formed. Therefore, when the semiconductor layer is provided on the plasma-treated insulating film, the interface between the plasma-treated insulating film and the semiconductor layer The characteristics are improved. Note that the plasma-treated insulating film is a rare gas (used in plasma treatment).
(Including at least one of He, Ne, Ar, Kr, and Xe). Plasma treatment can be performed similarly under the conditions described above.

Next, island-shaped semiconductor layers 110113 and 110114 are formed over the insulating film 110112 (see FIG.
Fig. 51 (D)). The island-shaped semiconductor layers 110113 and 110114 are formed of silicon (S) by using a known method (a sputtering method, an LPCVD method, a plasma CVD method, etc.)
i) forming an amorphous semiconductor layer using a material (for example, Si _x Ge _1-x etc.) having as a main component, crystallizing the amorphous semiconductor layer, and selectively etching the semiconductor layer Can be provided by The crystallization of the amorphous semiconductor layer may be performed by a laser crystallization method, a thermal crystallization method using RTA or furnace annealing, a thermal crystallization method using a metal element that promotes crystallization, or these methods. It can be carried out by a known crystallization method such as a method combining. Here, the end portions of the island-shaped semiconductor layers are provided in a shape close to a right angle (θ = 85 to 100 °). Alternatively, the semiconductor layer 110114 to be a low concentration drain region may be doped with impurities using a mask.
It may be formed by pinging.

Here, plasma treatment is performed on the surfaces of the semiconductor layers 110113 and 110114 to form the semiconductor layer 1.
The semiconductor layer 11011 is formed by oxidizing or nitriding the surface of 10113, 110114.
A plasma processing insulating film may be formed on the surfaces of the third and fourth layers 110114. For example, the semiconductor layer 11
When Si is used as the plasma treatment insulating film 110114, silicon oxide (SiOx) or silicon nitride (SiNx) is formed as the plasma treatment insulating film. Alternatively, the semiconductor layers 110113 and 110114 may be oxidized by plasma treatment and then nitrided by plasma treatment again. In this case, silicon oxide (SiOx) is formed in contact with the semiconductor layers 110113 and 110114, and silicon nitride oxide (SiNxOy) (x>) is formed on the surface of the silicon oxide.
y) is formed. Note that in the case where the semiconductor layer is oxidized by plasma treatment, for example, in an oxygen atmosphere (for example, in an atmosphere of oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed in an atmosphere of oxygen and hydrogen (H ₂ ) and a rare gas (or in an atmosphere of dinitrogen monoxide and a rare gas). On the other hand, in the case of nitriding the semiconductor layer by plasma treatment under a nitrogen atmosphere (e.g., nitrogen _{(N 2)} and a rare gas (He, Ne, Ar, Kr , X
or at least one of nitrogen and hydrogen and a rare gas atmosphere or NH
3) and plasma treatment in a rare gas atmosphere). For example, Ar can be used as the noble gas. Alternatively, a mixed gas of Ar and Kr may be used. Therefore, the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment. For example, when Ar is used, the plasma processing insulating film is
r is included.

Next, an insulating film 110116 is formed (FIG. 51E). The insulating film 110116 is formed of silicon oxide (SiO.sub.x) by using a known means (a sputtering method, an LPCVD method, a plasma CVD method, etc.)
), Silicon nitride (SiN x), silicon oxynitride (SiO x N y) (x> y), silicon nitride oxide (
A single-layer structure of an insulating film containing oxygen or nitrogen such as SiNxOy) (x> y), or a stacked structure of these can be provided. Note that in the case where a plasma treatment insulating film is formed on the surfaces of the semiconductor layers 110113 and 110114 by plasma treatment of the surfaces of the semiconductor layers 110113 and 110114, the plasma treatment insulating film can also be used as the insulating film 110116. .

Here, a plasma treatment insulating film may be formed on the surface of the insulating film 110116 by performing plasma treatment on the surface of the insulating film 110116 to oxidize or nitride the surface of the insulating film 110116. Note that the plasma-treated insulating film is a rare gas (He, Ne,
Containing at least one of Ar, Kr, and Xe). Plasma treatment can be performed similarly under the conditions described above.

Alternatively, the insulating film 110116 may be oxidized by performing plasma treatment once in an oxygen atmosphere, and then may be nitrided by performing plasma treatment again in a nitrogen atmosphere. In this manner, plasma treatment is performed on the insulating film 110116 to oxidize or nitride the surface of the insulating film 110116, whereby the surface of the insulating film 110116 can be reformed to form a dense film. The insulating film obtained by the plasma treatment is denser and has fewer defects such as pinholes as compared with the insulating film formed by the CVD method or the sputtering method, so that the characteristics of the thin film transistor can be improved.

Next, the gate electrode 110117 is formed (FIG. 51F). The gate electrode 110117 can be formed by using a known means (a sputtering method, an LPCVD method, a plasma CVD method, etc.).

In 110101, the semiconductor layer 110115 used as a source region and a drain region can be formed by performing doping after forming the gate electrode 110117.

In 110102, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110103, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

At 110104, side walls 110121 are provided on the side surfaces of the gate electrode 110117.
By performing impurity doping to form an LDD region.
In addition, a semiconductor layer 110115 which is used as a semiconductor layer source region and a drain region can be formed.

The side walls 110121 are silicon oxide (SiOx) or silicon nitride (SiNx).
Can be used. As a method of forming the side wall 110121 on the side surface of the gate electrode 110117, for example, silicon oxide (after the gate electrode 110117 is formed,
A method may be used in which a silicon oxide (SiOx) or silicon nitride (SiNx) film is etched by anisotropic etching after depositing SiOx) or silicon nitride (SiNx) by a known method. By doing this, silicon oxide (SiO 2 only on the side surface of the gate electrode 110117
Since the x) or silicon nitride (SiN x) film can be left, side walls 110121 can be formed on the side surfaces of the gate electrode 110117.

In 110105, after forming a mask 110122 so as to cover the gate electrode 110117, impurity doping is performed to be used as an LDD (Loff) region.
[0114] and the semiconductor layer 110115 which is used as a semiconductor layer source region and a drain region can be formed.

In 110106, by performing doping after forming the gate electrode 110117, 110114 used as an LDD (Lov) region and a semiconductor layer 110115 used as a semiconductor layer source region and drain region can be formed. .

Next, an insulating film 110118 is formed (FIG. 51G). The insulating film 110118 is formed of silicon oxide (SiOx) or silicon nitride (S) by a known method (such as sputtering or plasma CVD).
iNx), silicon oxynitride (SiOx Ny) (x> y), silicon nitride oxide (SiN x Oy) (
It can be provided as a single layer structure of an insulating film having oxygen or nitrogen such as x> y) or a film containing carbon such as DLC (diamond like carbon) or a laminated structure of these.

Here, plasma treatment may be performed on the surface of the insulating film 110118, and the surface of the insulating film 110118 may be oxidized or nitrided to form a plasma treatment insulating film on the surface of the insulating film 110118. Note that the plasma-treated insulating film is a rare gas (He, Ne,
Containing at least one of Ar, Kr, and Xe). Plasma treatment can be performed similarly under the conditions described above.

Next, the insulating film 110119 is formed. The insulating film 110119 can be formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (SiNxOy) by a known method (such as sputtering or plasma CVD). Besides insulating films having oxygen or nitrogen such as x> y) or films containing carbon such as DLC (diamond like carbon), epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, etc. Or a single layer structure of an organic material such as acrylic or a siloxane resin, or a laminated structure thereof. Note that the siloxane resin corresponds to a resin containing a Si-O-Si bond. Siloxane has a skeletal structure formed by the bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used. Note that the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment, and, for example, plasma-treated insulating film is used when Ar is used. The film contains Ar.

In the case where an organic material such as polyimide, polyamide, polyvinyl phenol, benzocyclobutene, or acrylic, a siloxane resin, or the like is used as the insulating film 110119, the insulating film 110119 is used.
The surface of the insulating film can be modified by oxidizing or nitriding the surface of the substrate by plasma treatment. By modifying the surface, it is possible to improve the strength of the insulating film 110119 and to reduce physical damage such as generation of cracks at the time of forming the opening and film reduction at the time of etching. The surface of the insulating film 110119 is reformed to form the insulating film 110.
When the conductive film 110123 is formed over the insulating layer 119, the adhesion to the conductive film is improved. For example,
When nitriding is performed using plasma treatment using a siloxane resin as the insulating film 110119, the surface of the siloxane resin is nitrided to form a plasma-treated insulating film containing nitrogen or a rare gas, and physical strength is improved. .

Next, a conductive film 110123 electrically connected to the semiconductor layer 110115 is formed,
Contact holes are formed in the insulating film 110119, the insulating film 110118, and the insulating film 110116. The shape of the contact hole may be tapered. By doing this,
The coverage of the conductive film 110123 can be improved.

FIG. 55 shows a cross-sectional structure of a bottom-gate transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110502) is formed over the entire surface of the substrate 110501. The first insulating film has a function of preventing impurities from the substrate side affecting the semiconductor layer to change the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) can be used.
Etc.) or stacked layers thereof can be used.

A first conductive layer (conductive layers 110503 and 110504) is formed over the first insulating film. The conductive layer 110503 includes a portion functioning as a gate electrode of the transistor 110520. The conductive layer 110504 includes a portion functioning as a first electrode of the capacitor 110521. Note that, as the first conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

A second insulating film (insulating film 110504) is formed to cover at least the first conductive layer. The second insulating film has a function as a gate insulating film. Note that a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), or the like, or a stacked layer thereof can be used as the second insulating film.

Note that a silicon oxide film is preferably used as a second insulating film in a portion in contact with the semiconductor layer. This is because the trap level at the interface where the semiconductor layer and the second insulating film are in contact decreases.

Note that when the second insulating film is in contact with Mo, a silicon oxide film is preferably used as a second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A semiconductor layer is formed by a photolithography method, an inkjet method, a printing method, or the like on part of a portion of the second insulating film which is formed to overlap with the first conductive layer. Then, a portion of the semiconductor layer is extended to a portion which is not formed overlapping with the first conductive layer on the second insulating film. The semiconductor layer has a channel formation region (a channel formation region 1105).
10) LDD regions (LDD regions 110508, LDD regions 110509) and impurity regions (impurity regions 110505, impurity regions 110506, and impurity regions 110507). The channel formation region 110510 functions as a channel formation region of the transistor 110520. The LDD region 110508 and the LDD region 110509 function as an LDD region of the transistor 110520. Note that the LDD region 110508 and the LDD region 110509 are not necessarily required. The impurity region 110505 is a transistor 11.
A portion which functions as one of a source electrode and a drain electrode of 0520 is included. Impurity region 1
00506 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110520. The impurity region 110507 includes a portion functioning as a second electrode of the capacitor 110521.

A third insulating film (insulating film 110511) is formed on the entire surface. A contact hole is selectively formed in part of the third insulating film. The insulating film 110511 has a function as an interlayer film. As the third insulating film, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride or the like), an organic compound material with a low dielectric constant (photosensitive or non-photosensitive organic resin material), or the like can be used. Alternatively, a material containing siloxane can also be used. Siloxane is a material having a skeletal structure formed by the bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used.

A second conductive layer (conductive layers 110512 and 110513) is formed over the third insulating film. The conductive layer 110512 is connected to the other of the source electrode and the drain electrode of the transistor 110520 through a contact hole formed in the third insulating film. Thus, the conductive layer 110512 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110520. The conductive layer 110513 includes a portion functioning as a first electrode of the capacitor 110521. The second conductive layer may be Ti, Mo or Ta.
, Cr, W, Al, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, G
e, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

Note that various insulating films or various conductive films may be formed as a process after the second conductive layer is formed.

The structures of a transistor and a capacitor in the case where an amorphous silicon (a-Si: H) film is used for a semiconductor layer of the transistor will be described.

FIG. 52 shows a cross-sectional structure of a top gate type transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110202) is formed over the entire surface of the substrate 110201. The first insulating film has a function of preventing impurities from the substrate side affecting the semiconductor layer to change the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) can be used.
Etc.) or stacked layers thereof can be used.

Note that the first insulating film does not necessarily have to be formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110203, a conductive layer 110204, and a conductive layer 110205) is formed over the first insulating film. The conductive layer 110203 includes a portion functioning as one of a source electrode and a drain electrode of the transistor 110220. Conductive layer 11020
4 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110220. The conductive layer 110205 includes a portion functioning as a first electrode of the capacitor 110221. Note that, as the first conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

The first semiconductor layer (semiconductor layer 110) is formed on the conductive layer 110203 and the conductive layer 110204.
206 and the semiconductor layer 110207) are formed. The semiconductor layer 110206 includes a portion functioning as one of a source electrode and a drain electrode. The semiconductor layer 110207 is
It includes a portion functioning as the other of the source electrode and the drain electrode. Note that silicon or the like containing phosphorus or the like can be used as the first semiconductor layer.

Between the conductive layer 110203 and the conductive layer 110204 and on the first insulating film,
Semiconductor layer (semiconductor layer 110208) is formed. And the semiconductor layer 110208
A portion of the conductive layer 110 extends on the conductive layer 110203 and on the conductive layer 110204. The semiconductor layer 110208 includes a portion functioning as a channel region of the transistor 110220. Note that as the second semiconductor layer, a semiconductor layer having non-crystallinity such as amorphous silicon (a-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used. .

A second insulating film (that covers at least the semiconductor layer 110208 and the conductive layer 110205)
An insulating film 110209 and an insulating film 110210 are formed. The second insulating film is
Function as an insulating film. Note that a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), or the like, or a stacked layer thereof can be used as the second insulating film.

Note that a silicon oxide film is preferably used as a second insulating film in a portion in contact with the second semiconductor layer. This is because the trap level at the interface where the second semiconductor layer and the second insulating film are in contact decreases.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as a second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A second conductive layer (conductive layers 110211 and 110212) is formed over the second insulating film. The conductive layer 110211 includes a portion functioning as a gate electrode of the transistor 110220. The conductive layer 110212 has a function as a second electrode of the capacitor 110221 or a wiring. Note that, as the second conductive layer, Ti, Mo, Ta, Cr, W, A
l, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

Note that various insulating films or various conductive films may be formed as a process after the second conductive layer is formed.

FIG. 53 shows a cross sectional structure of a reverse stagger (bottom gate) transistor and a cross sectional structure of a capacitor. In particular, the transistor illustrated in FIG. 53 has a structure called a channel etch type.

A first insulating film (insulating film 110302) is formed over the entire surface of the substrate 110301. The first insulating film has a function of preventing impurities from the substrate side affecting the semiconductor layer to change the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) can be used.
Etc.) or stacked layers thereof can be used.

Note that the first insulating film does not necessarily have to be formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (conductive layers 110303 and 110304) is formed over the first insulating film. The conductive layer 110303 includes a portion functioning as a gate electrode of the transistor 110320. The conductive layer 110304 includes a portion functioning as a first electrode of the capacitor 110321. Note that, as the first conductive layer, Ti, Mo, TB, Cr, W, Bl, N
d, Cu, Bg, Bu, Pt, NA-Si, Zn, Fe, BB, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

A second insulating film (insulating film 110302) is formed to cover at least the first conductive layer. The second insulating film has a function as a gate insulating film. Note that a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), or the like, or a stacked layer thereof can be used as the second insulating film.

Note that a silicon oxide film is preferably used as a second insulating film in a portion in contact with the semiconductor layer. This is because the trap level at the interface where the semiconductor layer and the second insulating film are in contact decreases.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as a second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

The first semiconductor layer (semiconductor layer 11) is formed on part of a portion of the second insulating film which is formed to overlap with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0306) is formed. Then, a portion of the semiconductor layer 110308 is extended to a portion which is not formed over the second insulating film so as to overlap with the first conductive layer. Semiconductor layer 11
[0306] A portion 0306 includes a portion functioning as a channel region of the transistor 110320. Note that as the semiconductor layer 110306, a non-crystalline semiconductor layer such as amorphous silicon (A-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used.

The second semiconductor layer (the semiconductor layer 110307 and the semiconductor layer 110) is partially formed over the first semiconductor layer.
307) is formed. The semiconductor layer 110307 includes a portion which functions as one of a source electrode and a drain electrode. The semiconductor layer 110308 includes a portion functioning as the other of the source electrode and the drain electrode. Note that silicon or the like containing phosphorus or the like can be used as the second conductor layer.

A second conductive layer (conductive layer 110309, conductive layer 1) is formed on the second semiconductor layer and the second insulating film.
10310 and the conductive layer 110311) are formed. The conductive layer 110309 includes a portion functioning as one of a source electrode and a drain electrode of the transistor 110320. The conductive layer 110310 includes a portion functioning as the other of the source and drain electrodes of the transistor 110320. The conductive layer 110312 includes a portion functioning as a second electrode of the capacitor 110321. Note that, as the second conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

Note that various insulating films or various conductive films may be formed as a process after the second conductive layer is formed.

Here, an example of a process characterized by a channel etch type transistor will be described. The same mask can be used to form the first semiconductor layer and the second semiconductor layer. In particular,
The first semiconductor layer and the second semiconductor layer are continuously formed. The first semiconductor layer and the second semiconductor layer are formed using the same mask.

Another example of a process characterized by a channel etch type transistor will be described. The channel region of the transistor can be formed without using a new mask. In particular,
After the second conductive layer is formed, a portion of the second semiconductor layer is removed using the second conductive layer as a mask. Alternatively, part of the second semiconductor layer is removed using the same mask as the second conductive layer. Then, a first semiconductor layer formed under the removed second semiconductor layer becomes a channel region of the transistor.

FIG. 54 shows a cross sectional structure of a reverse stagger (bottom gate) transistor and a cross sectional structure of a capacitor. In particular, the transistor illustrated in FIG. 54 has a structure called a channel protective type (channel stop type).

A first insulating film (insulating film 110402) is formed over the entire surface of the substrate 110401. The first insulating film has a function of preventing impurities from the substrate side affecting the semiconductor layer to change the properties of the transistor. That is, the first insulating film has a function as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) can be used.
Etc.) or stacked layers thereof can be used.

Note that the first insulating film does not necessarily have to be formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (conductive layers 110403 and 110404) is formed over the first insulating film. The conductive layer 110403 includes a portion functioning as a gate electrode of the transistor 110420. The conductive layer 110404 includes a portion functioning as a first electrode of the capacitor 110421. Note that, as the first conductive layer, Ti, Mo, TC, Cr, W, Cl, N
d, Cu, Cg, Cu, Pt, NC, Si, Zn, Fe, CC, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

A second insulating film (insulating film 110402) is formed to cover at least the first conductive layer. The second insulating film has a function as a gate insulating film. Note that a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), or the like, or a stacked layer thereof can be used as the second insulating film.

Note that a silicon oxide film is preferably used as a second insulating film in a portion in contact with the semiconductor layer. This is because the trap level at the interface where the semiconductor layer and the second insulating film are in contact decreases.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as a second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

The first semiconductor layer (semiconductor layer 11) is formed on part of a portion of the second insulating film which is formed to overlap with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0406) is formed. Then, a portion of the semiconductor layer 110408 is extended to a portion which is not formed over the second insulating film so as to overlap with the first conductive layer. Semiconductor layer 11
A portion 0406 functions as a channel region of the transistor 110420. Note that as the semiconductor layer 110406, a non-crystalline semiconductor layer such as amorphous silicon (C-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used.

A third insulating film (insulating film 110412) is formed on part of the first semiconductor layer. The insulating film 110412 has a function of preventing the channel region of the transistor 110420 from being removed by etching. That is, the insulating film 110412 functions as a channel protective film (channel stop film). Note that a single layer of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy) or the like, or a stacked layer thereof can be used as the third insulating film.

The second semiconductor layer (semiconductor layer 110) is formed on a part of the first semiconductor layer and a part of the third insulating film.
407 and the semiconductor layer 110408) are formed. The semiconductor layer 110407 includes a portion which functions as one of a source electrode and a drain electrode. The semiconductor layer 110408 is
It includes a portion functioning as the other of the source electrode and the drain electrode. Note that silicon or the like containing phosphorus or the like can be used as the second conductor layer.

A second conductive layer (a conductive layer 110409, a conductive layer 110410, and a conductive layer 110411) is formed over the second semiconductor layer. The conductive layer 110409 includes the transistor 110420.
And a portion functioning as one of a source electrode and a drain electrode. The conductive layer 110410 is
It includes a portion which functions as the other of the source and drain electrodes of the transistor 110420. The conductive layer 110412 includes a portion functioning as a second electrode of the capacitor 110421. Note that, as the second conductive layer, Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, A
u, Pt, NC, Si, Zn, Fe, Ca, Ge, etc., or alloys of these can be used. Alternatively, a stack of these elements (including an alloy) can be used.

Note that various insulating films or various conductive films may be formed as a process after the second conductive layer is formed.

Here, an example of a process which is characterized by a channel protective transistor is described. The same mask can be used to form the first semiconductor layer, the second semiconductor layer, and the second conductive layer.
At the same time, a channel region can be formed. Specifically, the first semiconductor layer is deposited,
Next, a third insulating film (channel protective film, channel stop film) is formed using a mask, and then a second semiconductor layer and a second conductive layer are formed successively. Then, after the second conductive layer is formed, the first semiconductor layer, the second semiconductor layer, and the second conductive layer are formed using the same mask. However, since the first semiconductor layer under the third insulating film is protected by the third insulating film, it is not removed by etching. This portion (on the top of the first semiconductor layer
The portion where the insulating film is formed is the channel region.

Next, an example in which a semiconductor substrate is used as a substrate for manufacturing a transistor will be described. A transistor manufactured using a semiconductor substrate has high mobility, so that the transistor size can be reduced. As a result, the number of transistors per unit area can be increased (the degree of integration can be increased), and the substrate size can be reduced as the degree of integration is increased in the same circuit configuration, whereby the manufacturing cost can be reduced. Furthermore, with the same substrate size, the circuit scale can be increased as the degree of integration is larger, so that higher functions can be provided while the manufacturing cost remains substantially the same. Moreover, because the variation of the characteristics is small,
The manufacturing yield can also be increased. Furthermore, since the operating voltage is small, power consumption can be reduced. Furthermore, high mobility enables high-speed operation.

A circuit formed by integrating transistors manufactured using a semiconductor substrate can be provided in a device in the form of an IC chip or the like, whereby the device can have various functions. For example, peripheral drive circuits (data driver (source driver), scan driver (gate driver), timing controller, image processing circuit, interface circuit, power supply circuit, oscillation circuit, etc.) of a display device are manufactured using a semiconductor substrate. By integrating and configuring the transistors, it is possible to manufacture a peripheral drive circuit which is small in size, small in power consumption, and capable of high-speed operation at low cost with high yield. Note that a circuit formed by integrating transistors manufactured using a semiconductor substrate may have a single-polarity transistor. This can simplify the manufacturing process and reduce the manufacturing cost.

A circuit formed by integrating transistors manufactured using a semiconductor substrate is otherwise
For example, it can be used for a display panel. More specifically, LCOS (Liquid
It can be used for a reflective liquid crystal panel such as Crystal On Silicon), a DMD (Digital Micromirror Device) element in which micro mirrors are integrated, an EL panel, and the like. By manufacturing these display panels using a semiconductor substrate, it is possible to manufacture a display panel with small size, small power consumption, and capable of high-speed operation at low cost with high yield. Note that the display panel includes a large scale integrated circuit (LSI) and the like formed over an element having a function other than driving of the display panel.

Hereinafter, a method for manufacturing a transistor using a semiconductor substrate will be described.

First, regions 110604 and 110606 (hereinafter also referred to as regions 110604 and 110606) in which elements are separated are formed in a semiconductor substrate 110600 (see FIG. 56A). Regions 110604 and 110606 provided in the semiconductor substrate 110600 are insulating films 1 respectively.
10602 (also referred to as field oxide film). Here, as the semiconductor substrate 110600, a single crystal Si substrate having n-type conductivity is used.
An example is shown in which the p well 110607 is provided in the area 110606 of 00.

The substrate 110600 is not particularly limited as long as it is a semiconductor substrate. For example, a single crystal Si substrate having n-type or p-type conductivity, a compound semiconductor substrate (GaAs substrate, I
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate etc), bonding method or SIMOX (Separation by Implanted Oxygen)
An SOI (Silicon on Insulator) substrate or the like manufactured using a method can be used.

The element isolation regions 110604 and 110606 are formed by selective oxidation (LOCOS (Local
Oxidation of Silicon) method, trench isolation method or the like can be used as appropriate.

The p well formed in the region 110606 of the semiconductor substrate 110600 is the semiconductor substrate 11.
This can be formed by selectively introducing an impurity element having p-type conductivity into 0600. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element imparting p-type conductivity.

Note that since a semiconductor substrate having n-type conductivity is used as the semiconductor substrate 110600 in this embodiment, the impurity element is not introduced into the region 110604, but an impurity element exhibiting n-type is introduced. The n well may be formed in the region 110604 by Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element. on the other hand,
In the case of using a semiconductor substrate having p-type conductivity, an n-type impurity element may be introduced into the region 110604 to form an n-well, and the impurity element may not be introduced into the region 110606.

Next, insulating films 110632 and 11063 are formed to cover the regions 110604 and 110606, respectively.
4 are formed respectively (see FIG. 56 (B)).

The insulating films 110632 and 110634 are subjected to heat treatment, for example, and then to the semiconductor substrate 110600.
The insulating films 110632 and 110634 can be formed of a silicon oxide film by oxidizing the surfaces of the regions 110604 and 110606 provided in FIG. A silicon oxide film is formed by thermal oxidation, and then the surface of the silicon oxide film is nitrided to nitride the surface of the silicon oxide film, thereby forming a laminated structure of a silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film). You may form.

Alternatively, as described above, the insulating films 110632 and 110634 may be formed using plasma treatment. For example, the regions 110604 and 11 provided in the semiconductor substrate 110600
A silicon oxide (SiOx) film or a silicon nitride (SiNx) film is formed as the insulating films 110632 and 110634 by performing oxidation treatment or nitridation treatment on the surface of 0606 by high-density plasma treatment.
) Can be formed of a film. Another example is high-density plasma processing for region 110604
After the oxidation treatment is performed on the surface of 110606, the nitriding treatment may be performed by performing high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 110604 and 110606, a (silicon oxynitride film) is formed on the silicon oxide film, and the insulating film 110 is formed.
Reference numerals 632 and 110634 denote films in which a silicon oxide film and a silicon oxynitride film are stacked. As another example, after a silicon oxide film is formed on the surfaces of the regions 110604 and 110606 by a thermal oxidation method, oxidation treatment or nitridation treatment may be performed by high-density plasma treatment.

Insulating film 1106 formed in regions 110604 and 110606 of the semiconductor substrate 110600
32, 110634 function as a gate insulating film in a transistor to be completed later.

Next, insulating films 110632 and 11063 formed in the regions 110604 and 110606, respectively.
A conductive film is formed to cover 4 (see FIG. 56C). Here, an example is shown in which a conductive film 110636 and a conductive film 110638 are sequentially stacked as the conductive film. Of course, the conductive film may be formed with a single layer or a stacked structure of three or more layers.

As the conductive films 110636 and 110638, tantalum (Ta) or tungsten (W)
, Titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (
It can be formed of an element selected from Cr), niobium (Nb) or the like, or an alloy material or compound material containing these elements as main components. Alternatively, it can also be formed of a metal nitride film obtained by nitriding these elements. Besides, it can also be formed of a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus, a silicide introduced with a metal material, and the like.

Here, tantalum nitride is used as the conductive film 110636, and the conductive film 11063 is further formed.
A laminated structure using tungsten as 8 is adopted. In addition, as the conductive film 110636,
A single layer or laminated film selected from tungsten nitride, molybdenum nitride or titanium nitride can be used. As the conductive film 110638, a single layer or a stacked film selected from tantalum, molybdenum, and titanium can be used.

Next, the conductive films 110636 and 110638 which are stacked and provided are selectively etched and removed to form a conductive film 110636 in part of the regions 110604 and 110606.
, And 110638 to form gate electrodes 110640 and 110642, respectively (see FIG. 57A).

Next, a resist mask 110648 is selectively formed to cover the region 110604,
The region 1106 is performed using the resist mask 110648 and the gate electrode 110642 as a mask.
An impurity region 110652 is formed by introducing an impurity element into the region 06 (see FIG.
B) see). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element imparting p-type conductivity. Here, phosphorus (P) is used as the impurity element. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

In FIG. 57B, the impurity region 110652 and the channel formation region 11065 form a source or drain region in the region 110606 by introducing an impurity element.
0 is formed.

Next, a resist mask 110666 is selectively formed to cover the region 110606,
The region 1106 is performed using the resist mask 110666 and the gate electrode 110640 as a mask.
An impurity region 110670 is formed by introducing an impurity element into the insulating layer 04 (see FIG.
C)). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element imparting p-type conductivity. Here, an impurity element (eg, boron (B)) having a conductivity type different from that of the impurity element introduced into the region 110606 in FIG. 57C is introduced. As a result, impurity region 11 forming a source or drain region in region 110604
A channel formation region 110668 is formed with 0670. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, a second insulating film 110672 is formed to cover the insulating films 110632 and 110634 and the gate electrodes 110640 and 110642. Further, regions 110604 and 1106
Wirings 110674 which are electrically connected to impurity regions 110652 and 110670 which are respectively formed in 06 are formed (see FIG. 57D).

The second insulating film 110672 is formed of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, Silicon nitride (SiN x), silicon oxynitride (SiO x N y) (x> y), silicon nitride oxide (S
An insulating film having oxygen or nitrogen such as iNxOy) (x> y), a film containing carbon such as DLC (diamond like carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic or siloxane It can be provided in a single layer or laminated structure made of a siloxane material such as a resin. The siloxane material is S
It corresponds to a material containing an i-O-Si bond. Siloxane is silicon (Si) and oxygen (O)
A skeleton structure is formed by bonding with As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used.

The wiring 110674 is formed of aluminum (Al) by a CVD method, a sputtering method, or the like.
Tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn),
An element selected from neodymium (Nd), carbon (C), silicon (Si), or an alloy material or compound material containing these elements as main components is formed in a single layer or a stack. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. The wiring 110674 is, for example, a barrier film and aluminum silicon (
Layered structure of Al-Si) film and barrier film, barrier film and aluminum silicon (Al-Si)
A stacked structure of a film, a titanium nitride (TiN) film, and a barrier film may be employed. Note that the barrier film corresponds to a thin film formed of titanium, nitride of titanium, molybdenum, or nitride of molybdenum. Since aluminum and aluminum silicon have low resistance and are inexpensive, wiring 11
It is most suitable as a material for forming 0674. For example, when the upper and lower barrier layers are provided,
The generation of hillocks of aluminum or aluminum silicon can be prevented. For example, when a barrier film made of titanium which is a highly reducing element is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced. As a result, wiring 1106
74 can be electrically and physically well connected to the crystalline semiconductor film.

Note that the structure of the transistor is not limited to the illustrated structure. For example, a transistor having a structure such as an inverted stagger structure or a fin FET structure can be employed. The fin FET structure is preferable because the short channel effect accompanying miniaturization of the transistor size can be suppressed.

Next, another example using a semiconductor substrate as a substrate for manufacturing a transistor will be described.

First, an insulating film is formed over the substrate 110800. Here, single crystal Si having n-type conductivity is used as the substrate 110800, and the insulating film 110802 and the insulating film 110804 are formed over the substrate 110800 (see FIG. 58A). For example, silicon oxide (SiOx) is formed as the insulating film 110802 by performing heat treatment on the substrate 110800. Furthermore, C
A silicon nitride (SiNx) film is formed using a VD method or the like.

The substrate 110800 is not particularly limited as long as it is a semiconductor substrate. For example, a single crystal Si substrate having n-type or p-type conductivity, a compound semiconductor substrate (GaAs substrate, I
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate etc), bonding method or SIMOX (Separation by IMplanted OXygen)
An SOI (Silicon on Insulator) substrate or the like manufactured using a method can be used.

The insulating film 110804 may be provided by nitriding the insulating film 110802 by high-density plasma treatment after the insulating film 110802 is formed. The insulating film is a single layer or 3
It may be a laminated structure of layers or more.

Next, a pattern of a resist mask 110806 is selectively formed, and selective etching is performed using the resist mask 110806 as a mask to obtain a substrate 110800.
Selectively form a recess 110808 (see FIG. 58B). The etching of the substrate 110800 and the insulating films 110802 and 110804 can be performed by dry etching using plasma.

Next, after removing the pattern of the resist mask 110806, an insulating film 110810 is formed so as to fill the concave portion 110808 formed in the substrate 110800 (FIG. 58C).
reference).

The insulating film 110810 is formed using silicon oxide, silicon nitride, silicon oxynitride (SiO x N y) (x>y> 0), silicon nitride oxide (Si), or the like by a CVD method, a sputtering method, or the like.
An insulating material such as NxOy) (x>y> 0) is used. Here, the insulating film 11081
As 0, a silicon oxide film is formed by a normal pressure CVD method or a low pressure CVD method using TEOS (tetraethyl orthosilicate) gas.

Next, grinding, polishing or CMP (Chemical Mechanical P)
The surface of the substrate 110800 is exposed by performing an olishing process. Then, the surface of the substrate 110800 is divided by the insulating film 110810 formed in the recess 110808 of the substrate 110800. (See FIG. 59A) Here, the divided regions are referred to as regions 110812 and 110813, respectively. Note that the insulating film 110811 is obtained by removing part of the insulating film 110810 by grinding treatment, polishing treatment, or CMP treatment.

Subsequently, the substrate 11 is selectively introduced by selectively introducing an impurity element having a p-type conductivity.
A p-well 110815 is formed in a region 110813 of 0800. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element imparting p-type conductivity. Here, boron (B) is introduced into the region 110813 as an impurity element. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Note that when a semiconductor substrate having n-type conductivity is used as the substrate 110800, the region 1 can be formed.
Although an impurity element may not be introduced into 10812, an n-well may be formed in the region 110812 by introducing an n-type impurity element. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element.

On the other hand, in the case of using a semiconductor substrate having p-type conductivity, an n-type impurity element is introduced into the region 110812 to form an n-well, and the impurity elements are not introduced into the regions 110812 and 110813. It may be

Next, the insulating film 11083 is formed on the surface of the regions 110812 and 110813 of the substrate 110800.
2 and 110834 are formed (see FIG. 59B).

The insulating films 110832 and 110834 can be formed of silicon oxide films by heat treatment, for example, to oxidize surfaces of the regions 110812 and 110813 provided in the substrate 110800. Alternatively, after forming a silicon oxide film by a thermal oxidation method, the surface of the silicon oxide film is nitrided to nitride the surface of the silicon oxide film, thereby laminating the silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film). You may form by a structure.

Alternatively, as described above, the insulating films 110832 and 110834 may be formed using plasma treatment. For example, the regions 110812 and 11081 provided on the substrate 110800
The insulating film 1 is subjected to oxidation treatment or nitriding treatment by high density plasma treatment on the surface of
A silicon oxide (SiOx) film or a silicon nitride (SiNx) film can be formed as 10832 and 110834. As another example, high density plasma treatment allows the region 110812, 1
After oxidation treatment is performed on the surface of 10813, nitridation treatment may be performed by performing high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surface of the regions 110812 and 110813, a (silicon oxynitride film) is formed over the silicon oxide film, and the insulating film 1108 is formed.
Reference numerals 32 and 110834 denote films in which a silicon oxide film and a silicon oxynitride film are stacked. As another example, after a silicon oxide film is formed on the surfaces of the regions 110812 and 110813 by a thermal oxidation method, oxidation treatment or nitridation treatment may be performed by high-density plasma treatment.

Note that the insulating film 110 formed in the regions 110812 and 110813 of the substrate 110800
The transistors 832 and 110834 function as gate insulating films in transistors completed later.

Next, a conductive film is formed to cover the insulating films 110832 and 110834 formed in the regions 110812 and 110813 provided in the substrate 110800 (see FIG. 59C).
Here, an example is shown in which a conductive film 110836 and a conductive film 110838 are sequentially stacked as the conductive film. Of course, the conductive film may be formed with a single layer or a stacked structure of three or more layers.

As the conductive films 110836 and 110838, tantalum (Ta) or tungsten (W)
, Titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (
It can be formed of an element selected from Cr), niobium (Nb) or the like, or an alloy material or compound material containing these elements as main components. Alternatively, it can also be formed of a metal nitride film obtained by nitriding these elements. Besides, it can also be formed of a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus, a silicide introduced with a metal material, and the like.

Here, tantalum nitride is used as the conductive film 110836, and the conductive film 110838 is further formed.
As a laminated structure using tungsten. In addition, as the conductive film 110836, a single layer or a stacked film selected from tantalum nitride, tungsten nitride, molybdenum nitride, or titanium nitride can be used. As the conductive film 110838, a single layer or a stacked film selected from tungsten, tantalum, molybdenum, and titanium can be used.

Next, the conductive films 110836 and 110838 are left as part of the regions 110812 and 110813 of the substrate 110800 by selectively etching and removing the conductive films 110836 and 110838 provided in layers; Conductive conductive films 110840 and 110842 are formed (see FIG. 59D). Here, the conductive film 11
The surface of the substrate 110800 is exposed in a region which does not overlap with 0840 and 110842.

Specifically, in the region 110812 of the substrate 110800, a portion of the insulating film 110832 which does not overlap with the conductive film 110840 is selectively removed, and end portions of the conductive film 110840 and the insulating film 110832 are formed to substantially coincide with each other. Furthermore, region 1 of substrate 110800
In 10813, the portion of the insulating film 110834 which does not overlap with the conductive film 110842 is selectively removed, and the end portions of the conductive film 110842 and the insulating film 110834 are formed so as to substantially coincide with each other.

In this case, portions of the insulating film and the like which do not overlap may be removed simultaneously with the formation of the conductive films 110840 and 110842 or a resist mask remaining after the formation of the conductive films 110840 and 110842 or a heavy mask using the conductive films 110840 and 110842 as a mask The insulating film or the like in the nonessential portion may be removed.

Next, an impurity element is selectively introduced into the regions 110812 and 110813 of the substrate 110800 (see FIG. 60A). Here, a low concentration impurity element imparting n-type conductivity is selectively introduced into the region 110813 using the conductive film 110842 as a mask, and a low concentration impurity element imparting p-type conductivity to the region 110812 using the conductive film 110840 as a mask is selected. Introduced.
Phosphorus (P), arsenic (As), or the like can be used as the impurity element imparting n-type conductivity. Boron (B), aluminum (Al), gallium (Ga) or the like can be used as the impurity element imparting p-type. Note that after the impurity element is introduced, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, sidewalls 110854 in contact with the side surfaces of the conductive films 110840 and 110842
Form Specifically, a film containing an inorganic material of silicon, an oxide of silicon, or an inorganic material of a nitride of silicon, a film containing an organic material such as an organic resin, or the like by a plasma CVD method, a sputtering method, etc. Form. Then, the insulating film can be selectively etched by anisotropic etching mainly in the vertical direction to be in contact with the side surfaces of the conductive films 110840 and 110842. Note that the sidewall 110854 is an LDD (Light
ly Doped drain) Used as a mask for doping in forming the region. Here, the sidewall 110854 is formed in contact with the side surface of the insulating film formed below the conductive films 110840 and 110842 or the floating gate electrode.

Subsequently, impurity regions are formed to function as source or drain regions by introducing impurity elements into the regions 110812 and 110813 of the substrate 110800 using the sidewalls 110854 and the conductive films 110840 and 110842 as masks (FIG. 60 (B
)reference). Here, the sidewall 11085 is formed in the region 110813 of the substrate 110800.
4 and a conductive film 110842 as a mask, an impurity element imparting high concentration n-type is introduced, and a sidewall 110854 and a conductive film 110840 as a mask introduce an impurity element imparting high concentration p-type to the region 110812.

As a result, in the region 110812 of the substrate 110800, an impurity region 110858 that forms a source or drain region, a low concentration impurity region 110860 that forms an LDD region, and a channel formation region 110856 are formed. And the region 110 of the substrate 110800
In 813, an impurity region 110864 which forms a source or drain region, a low concentration impurity region 110866 which forms an LDD region, and a channel formation region 110862 are formed.

Note that although an example is shown here in which the LDD region is formed using a sidewall, the present invention is not limited to this. The LDD region may be formed using a mask or the like without using the side wall, or the LDD region may not be formed. If the LDD region is not formed, the manufacturing process can be simplified, and the manufacturing cost can be reduced.

Note that in this case, the substrate 1 is not overlapped with the conductive films 110840 and 110842.
The impurity element is introduced with the surface of 10800 exposed. Therefore, substrate 11
Channel formation region 11 formed in regions 110812 and 110813 of 0800 respectively
0856 and 110862 can be formed in a self-aligned manner by the conductive films 110840 and 110842.

Next, a second insulating film 110877 is formed to cover the insulating film, the conductive film, and the like provided in the regions 110812 and 110813 of the substrate 110800, and an opening 110878 is formed in the insulating film 110877 (FIG. )reference).

The second insulating film 110877 is formed of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, Silicon nitride (SiN x), silicon oxynitride (SiO x N y) (x> y), silicon nitride oxide (S
An insulating film having oxygen or nitrogen such as iNxOy) (x> y), a film containing carbon such as DLC (diamond like carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic or siloxane It can be provided in a single layer or laminated structure made of a siloxane material such as a resin. The siloxane material is S
It corresponds to a material containing an i-O-Si bond. Siloxane is silicon (Si) and oxygen (O)
A skeleton structure is formed by bonding with As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used.

Next, a conductive film 110880 is formed in the opening 110878 by a CVD method, and the conductive film 110882a is formed over the insulating film 110877 so as to be electrically connected to the conductive film 110880.
.About.110882 d are selectively formed (see FIG. 60D).

The conductive films 110880 and 110882a to 110882d can be formed of aluminum (Al), tungsten (W), titanium (Ti), tantalum (CVD), sputtering, or the like.
Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au)
), Silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si)
And the alloy material or the compound material which has these elements as a main component, and it forms in single layer or lamination | stacking. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. Conductive films 110880 and 110
For example, the barrier films and aluminum silicon (Al-Si)
A stacked structure of a film and a barrier film, and a stacked structure of a barrier film, an aluminum silicon (Al-Si) film, a titanium nitride (TiN) film, and a barrier film may be employed. The barrier film is titanium,
It corresponds to a thin film of nitride of titanium, molybdenum, or nitride of molybdenum. Aluminum and aluminum silicon are optimal as materials for forming the conductive film 110880 because they have low resistance and are inexpensive. For example, when the upper and lower barrier layers are provided, the generation of hillocks of aluminum and aluminum silicon can be prevented. For example, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on a crystalline semiconductor film, the natural oxide film is reduced to form a crystalline semiconductor film. You can make contact. Here, the conductive film 110880 is formed of tungsten (W
Can be formed by selective growth.

Through the above steps, a p-type transistor formed in the region 110812 of the substrate 110800 and an n-type transistor formed in the region 110813 can be obtained.

It is to be noted that the structure of the transistor constituting the transistor of the present invention is not limited to the illustrated structure. For example, a transistor having a structure such as an inverted stagger structure or a fin FET structure can be employed. The fin FET structure is preferable because the short channel effect accompanying miniaturization of the transistor size can be suppressed.

The structure of the transistor and the method for manufacturing the transistor have been described above. here,
Wirings, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. can be made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag)
, Copper (Cu), magnesium (Mg), scandium (Sc), cobalt (C
o) Zinc (Zn), Niobium (Nb), Silicon (Si), Phosphorus (P), Boron (B), Arsenic (As), Gallium (Ga), Indium (In), Tin (Sn)
), A compound containing as a component one or more elements selected from the group consisting of oxygen (O), or one or more elements selected from the above group, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO), tin oxide cadmium (CTO)
And aluminum neodymium (Al-Nd), magnesium silver (Mg-Ag), molybdenum niobium (Mo-Nb), etc.). Alternatively, the wiring, the electrode, the conductive layer, the conductive film, the terminal, and the like are preferably formed using a material in which these compounds are combined. Alternatively, a compound (silicide) of one or more elements selected from the above group and silicon (eg, aluminum silicon, molybdenum silicon, nickel silicide, etc.)
Preferably, it is formed of a compound of one or more elements selected from the above group and nitrogen (for example, titanium nitride, tantalum nitride, molybdenum nitride, etc.).

Note that silicon (Si) may contain an n-type impurity (such as phosphorus) or a p-type impurity (such as boron). Since the silicon contains impurities, the conductivity can be improved and the same behavior as a normal conductor can be achieved. Therefore, it becomes easy to utilize as wiring, an electrode, etc.

Note that as silicon, silicon having various crystallinity such as single crystal, polycrystal (polysilicon), microcrystalline (microcrystal silicon), and the like can be used. Alternatively, silicon which does not have crystallinity such as amorphous (amorphous silicon) can be used. Wiring, an electrode, a conductive layer, and the like by using single crystal silicon or polycrystalline silicon
The resistance of the conductive film, the terminal, and the like can be reduced. By using amorphous silicon or microcrystalline silicon, a wiring or the like can be formed by a simple process.

Note that aluminum or silver has high conductivity, so that signal delay can be reduced. Furthermore, since it is easy to etch, it is easy to pattern and fine processing can be performed.

In addition, since copper has high conductivity, signal delay can be reduced. When using copper, in order to improve adhesiveness, it is desirable to make it a laminated structure.

Molybdenum or titanium is desirable because it has advantages such as not causing defects, easy etching, and high heat resistance even when in contact with an oxide semiconductor (ITO, IZO, or the like) or silicon.

Tungsten is desirable because it has advantages such as high heat resistance.

Neodymium is desirable because it has advantages such as high heat resistance. In particular, when an alloy of neodymium and aluminum is used, the heat resistance is improved and the aluminum is less likely to cause hillocks.

Note that silicon is preferable because it has advantages such as high heat resistance that can be formed at the same time as a semiconductor layer included in a transistor.

In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S
Since nO) and cadmium tin oxide (CTO) have translucency, they can be used in a part that transmits light. For example, it can be used as a pixel electrode or a common electrode.

Note that IZO is desirable because it is easy to etch and process. It is also less likely that IZO will leave a residue when it is etched. Therefore, when IZO is used as a pixel electrode, it is possible to reduce the occurrence of defects (such as short circuit or alignment disorder) in a liquid crystal element or a light emitting element.

Note that the wirings, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. may have a single-layer structure,
It may be a multilayer structure. With a single-layer structure, manufacturing steps of a wiring, an electrode, a conductive layer, a conductive film, a terminal, and the like can be simplified, the number of process days can be reduced, and the cost can be reduced. Alternatively, by using a multilayer structure, it is possible to reduce disadvantages and to form wirings, electrodes, and the like with high performance while taking advantage of the merits of the respective materials.
For example, by including a low resistance material (such as aluminum) in the multilayer structure, the resistance of the wiring can be reduced. As another example, by using a laminated structure in which a low heat resistant material is sandwiched between high heat resistant materials, heat resistance of wiring, electrodes, etc. can be increased while taking advantage of the merits of the low heat resistant material. It can. For example, it is preferable to form a stacked structure in which a layer containing aluminum is sandwiched by layers containing molybdenum, titanium, neodymium and the like.

Here, in the case where the wirings, electrodes, etc. are in direct contact with each other, they may adversely affect each other. For example, one of the wires, electrodes, and the like is contained in the material of the other wire, electrode, and the like, and the properties are changed, and the original purpose can not be achieved. As another example, when forming or manufacturing a high resistance portion, a problem may occur and it can not be manufactured normally. In such a case, it is preferable to sandwich or cover a material that is more reactive due to the laminated structure with a less reactive material. For example, when connecting ITO and aluminum, it is desirable to sandwich titanium, molybdenum and neodymium alloy between ITO and aluminum. As another example, when silicon and aluminum are connected, it is desirable to sandwich titanium, molybdenum and neodymium alloy between ITO and aluminum.

Note that the wiring refers to one in which a conductor is disposed. It may be extended linearly, or may be arranged short without extension. Thus, the electrodes are included in the wiring.

Note that a carbon nanotube may be used as a wiring, an electrode, a conductive layer, a conductive film, a terminal, a via, a plug, or the like. Furthermore, since carbon nanotubes have translucency, they can be used in portions through which light is transmitted. For example, it can be used as a pixel electrode or a common electrode.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Embodiment 4
In this embodiment, the structure of the display device is described.

The structure of the display device is described with reference to FIG. FIG. 61A is a top view of a display device.

Pixel portion 170101, scanning line input terminal 170103, and signal line input terminal 170104
Is formed on the substrate 170100, and a scanning line is formed on the substrate 170100 extending in the row direction from the scanning line input terminal 170103, and a signal line is extended in the column direction from the signal line input terminal 170104. It is formed on 170100. Then, the pixels 170102 are arranged in a matrix at the intersections of the scan lines and the signal lines with the pixel portions 170101.

The scanning line input terminals 170103 are formed on both sides of the substrate 170100 in the row direction.
The scanning lines extending from the one scanning line input terminal 170103 and the scanning lines extending from the other scanning line input terminal 170103 are alternately formed. In this case, pixel 1
Since 70102 can be arranged at high density, a high definition display device can be obtained. However, without limitation thereto, the scanning line input terminal 170103 may be formed on only one side in the row direction of the substrate 170100. In this case, the frame of the display device can be made smaller. The area of the pixel portion 170101 can be enlarged. As another example, the scanning line extending from one scanning line input terminal 170103 and the other scanning line input terminal 170103
And the scanning line extending from the same may be common. In this case, it is suitable for a display device with a large load of scanning lines, such as a large display device. A signal is input to the scan line from an external driver circuit through the scan line input terminal 170103.

The signal line input terminal 170104 is formed on one side of the substrate 170100 in the column direction.
In this case, the frame of the display device can be made smaller. The area of the pixel portion 170101 can be enlarged. However, without limitation thereto, the signal line input terminals 170104 may be formed on both sides of the substrate 170100 in the column direction. In this case, the pixels 170102 can be arranged at high density. Note that the signal is input from the external drive circuit to the signal line input terminal 1
70104 is input to the scan line.

The pixel 170102 has a switching element and a pixel electrode. In each of the pixels 170102, the first terminal of the switching element is connected to the signal line, and the second terminal of the switching element is connected to the pixel electrode. The on and off of the switching element are controlled by the scanning line. However, the present invention is not limited to this, and various configurations can be used.
For example, the pixel 170102 may include a capacitor. In this case, the capacitance line is
It is desirable to form on 70100. As another example, the pixel 170102 may include a current source such as a drive transistor. In this case, the power supply line is preferably formed over the substrate 170100.

As the substrate 170100, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fibers (silk,
Cotton, hemp, synthetic fiber (nylon, polyurethane, polyester) or regenerated fiber (including acetate, cupra, rayon, regenerated polyester), etc., leather substrate, rubber substrate,
A stainless steel still substrate, a substrate having a stainless steel still foil, or the like can be used. Alternatively, the skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. However, the present invention is not limited to this, and various ones can be used.

Note that as a switching element included in the pixel 170102, a transistor (eg, a bipolar transistor, a MOS transistor, or the like), a diode (eg, a PN diode, a PIN diode, a Schottky diode, or MIM (Metal Insulato)
r Metal) Diode, MIS (Metal Insulator Semico)
nductor), a diode connected transistor, etc.), a thyristor, etc. can be used. However, the present invention is not limited to this, and various ones can be used. Note that in the case where a MOS transistor is used as a switching element included in the pixel 170102, a gate electrode is connected to a scan line, a first terminal is connected to a signal line, and a second terminal is connected to a pixel electrode.

Up to this point, the case of inputting a signal by the external drive circuit has been described. However, without limitation thereto, an IC chip can be mounted on a display device.

For example, as shown in FIG. 62A, the IC chip 170201 can be mounted on the substrate 170100 by a COG (Chip on Glass) method. In this case I
Since inspection can be performed before the C chip 170201 is mounted on the substrate 170100, the yield of the display device can be improved. Reliability can be improved. Note that portions common to those in the configuration of FIG. 61A are denoted by the same reference numerals, and the description thereof is omitted.

As another example, as shown in FIG. 62B, TAB (Tape Automated B
The IC chip 170201 can be mounted on an FPC (Flexible P
It can be implemented in a rinted circuit 170200. In this case, the IC
Since inspection can be performed before the chip 170201 is mounted on the FPC 170200, the yield of the display device can be improved. Reliability can be improved. Note that portions common to those in the configuration of FIG. 61A are denoted by the same reference numerals, and the description thereof is omitted.

Here, not only the IC chip is mounted on the substrate 170100, but also the driver circuit is
It can be formed on 00.

For example, as illustrated in FIG. 61B, the scan line driver circuit 170105 can be formed over the substrate 170100. In this case, the cost can be reduced by reducing the number of parts. It is possible to improve the reliability by reducing the number of connection points with circuit components. Since the scan line driver circuit 170105 has a low drive frequency, the scan line driver circuit 170105 can be easily formed using amorphous silicon or microcrystalline silicon as a semiconductor layer of a transistor. Note that an IC chip for outputting a signal to a signal line may be mounted on the substrate 170100 by a COG method. Alternatively, an FPC in which an IC chip for outputting a signal to a signal line is mounted by a TAB method may be provided over the substrate 170100. Note that the scanning line driver circuit 170105
An IC chip for controlling the chip may be mounted on the substrate 170100 by a COG method. Alternatively, an F chip in which an IC chip for controlling the scan line driver circuit 170105 is mounted by a TAB method
The PC may be disposed on the substrate 170100. Note that portions common to those in the configuration of FIG. 61A are denoted by the same reference numerals, and the description thereof is omitted.

As another example, as illustrated in FIG. 61C, the scan line driver circuit 170105 and the signal line driver circuit 170106 can be formed over the substrate 170100. Therefore, the cost can be reduced by reducing the number of parts. It is possible to improve the reliability by reducing the number of connection points with circuit components. Note that an IC chip for controlling the scan line driver circuit 170105 may be mounted on the substrate 170100 by a COG method. Alternatively, the scanning line drive circuit 17
FPC, on which an IC chip for controlling the 0105 is mounted by a TAB method, is a substrate 170100
It may be located at An IC chip for controlling the signal line driver circuit 170106 is a substrate 17
It may be implemented by COG in 0100. Alternatively, an FPC in which an IC chip for controlling the signal line driver circuit 170106 is mounted by a TAB method may be provided on the substrate 170100. Note that portions common to those in the configuration of FIG. 61A are denoted by the same reference numerals, and the description thereof is omitted.

Next, the configuration of another display device will be described with reference to FIG. Specifically, a display device having a TFT substrate, an opposing substrate, and a display layer sandwiched between the TFT substrate and the opposing substrate will be described. FIG. 63 is a top view of the display device.

A pixel portion 170301, a scan line driver circuit 170302a, a scan line driver circuit 170302b, and a signal line driver circuit 170303 are formed over a substrate 170300. Then, the pixel portion 170301, the scanning line drive circuit 170302a, and the scanning line drive circuit 170302
b and the signal line driver circuit 170303 is a substrate 170300 with a sealing material 170321.
And the substrate 170310 are sealed.

Further, the FPC 107320 is disposed on the substrate 170300. Then, the IC chip 107321 is mounted on the FPC 170320 by a TAB method.

In the pixel portion 170301, a plurality of pixels are arranged in a matrix. Then, scan lines extend in the row direction from the scan line driver circuit 170302 a and are formed over the substrate 170300. A scan line extends in the row direction from the scan line driver circuit 170302 b and is formed over the substrate 170300. Signal lines extend in the column direction from the signal line driver circuit 170303 to
It is formed on 0300.

A scan line driver circuit 170302 a is formed in one of the row directions of the substrate 170300, and a scan line driver circuit 170302 b is formed in the other of the substrate 170300 in the row direction. The scan lines extending from the scan line driver circuit 170302 a and the scan lines extending from the scan line driver circuit 170302 b are alternately formed. Therefore, a high definition display device can be obtained. However, without limitation thereto, only one of the scan line driver circuit 170302 a and the scan line driver circuit 170302 b may be formed over the substrate 170300. In this case, the frame of the display device can be made smaller. The area of the pixel portion 170301 can be enlarged. As another example, the scan line extended from the scan line drive circuit 170302 a and the scan line extended from the scan line drive circuit 170302 b may be common. In this case, it is suitable for a display device with a large load of scanning lines, such as a large display device.

The signal line driver circuit 170303 is formed on one side of the substrate 170300 in the column direction. Therefore, the frame of the display device can be made smaller. The area of the pixel portion 170301 can be enlarged. However, the present invention is not limited to this.
It may be formed on both sides in the column direction on 0300. In this case, a high definition display device can be obtained.

Note that as the substrate 170300, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fibers (silk,
Cotton, hemp, synthetic fiber (nylon, polyurethane, polyester) or regenerated fiber (including acetate, cupra, rayon, regenerated polyester), etc., leather substrate, rubber substrate,
A stainless steel still substrate, a substrate having a stainless steel still foil, or the like can be used. Alternatively, the skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. However, the present invention is not limited to this, and various ones can be used.

Note that as a switching element included in the display device, a transistor (eg, a bipolar transistor, a MOS transistor, or the like), a diode (eg, a PN diode, PIN)
Diode, Schottky diode, MIM (Metal Insulator Me
tal) diode, MIS (Metal Insulator Semiconduc
A tor) diode, a diode-connected transistor or the like), a thyristor or the like can be used. However, the present invention is not limited to this, and various ones can be used.

So far, the case where the driver circuit is formed over the same substrate as the pixel portion has been described. However, the present invention is not limited to this, and another substrate on which part or all of the driver circuit is formed may be mounted as an IC chip on the substrate on which the pixel portion is formed.

For example, as shown in FIG. 64A, an IC chip 170401 is used instead of the signal line driver circuit.
Can be mounted on the substrate 170300 by a COG method. In this case, by mounting the IC chip 170401 on the substrate 170300 by a COG method instead of the signal line driver circuit, an increase in power consumption can be prevented. This is because the signal line drive circuit consumes a large amount of power because the drive frequency is high. Since inspection can be performed before the IC chip 170401 is mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be improved. Since the scan line drive circuit 170302 a and the scan line drive circuit 170302 b have low drive frequencies, the scan line drive circuit 170302 a and the scan line drive circuit 170302 b can be easily formed using amorphous silicon or microcrystalline silicon as a semiconductor layer of a transistor. Can. Thus, a display device can be manufactured using a large substrate. Note that portions common to those in the configuration of FIG. 63 are denoted by common reference numerals, and the description thereof is omitted.

As another example, as shown in FIG. 64B, an IC chip 170 is used instead of the signal line driver circuit.
401 is mounted on a substrate 170300 by a COG method, an IC chip 170501a is mounted on a substrate 170300 by a COG method instead of the scan line driver circuit 170302a, and an IC chip 170501b is mounted on a substrate 170300 instead of the scan line driver circuit 170302b by a COG method. It may be implemented. In this case, inspection can be performed before the IC chip 170401, the IC chip 170501a, and the IC chip 170501b are mounted on the substrate 170300. Therefore, the yield of the display device can be improved. Reliability can be improved. Substrate 170300
Amorphous silicon or microcrystalline silicon can be easily used as a semiconductor layer of a transistor to be formed. Thus, a display device can be manufactured using a large substrate. Note that portions common to those in the configuration of FIG.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of the present embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Etc. can be done freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Fifth Embodiment
In the present embodiment, the operation of the display device is described.

FIG. 65 is a diagram showing a configuration example of a display device.

The display device 180100 includes a pixel portion 180101, a signal line driver circuit 180103, and a scan line driver circuit 180104. In the pixel portion 180101, a plurality of signal lines S1 to Sm are arranged to extend in the column direction from the signal line driver circuit 180103. Pixel portion 180101
A plurality of scan lines G1 to Gn are arranged extending in the row direction from the scan line drive circuit 180104. The pixels 180102 are arranged in a matrix at the intersections of the plurality of signal lines S1 to Sm and the plurality of scan lines G1 to Gn.

Note that the signal line driver circuit 180103 has a function of outputting a signal to each of the signal lines S1 to Sn. This signal may be called a video signal. Note that the scanning line driver circuit 180104
Has a function of outputting a signal to each of the scanning lines G1 to Gm. This signal may be called a scanning signal.

Note that the pixel 180102 includes at least a switching element connected to a signal line. The switching element is controlled to be on or off by the potential of the scanning line (scanning signal). Then, when the switching element is on, the pixel 180102 is selected, and when the switching element is off, the pixel 180102 is not selected.

When the pixel 180102 is selected (selected state), a video signal is input to the pixel 180102 from the signal line. Then, the state of the pixel 180102 (for example, the luminance, the transmittance, the voltage of the storage capacitor, and the like) changes in accordance with the input video signal.

When the pixel 180102 is not selected (non-selected state), the video signal is the pixel 1801.
Not input to 02. However, since the pixel 180102 holds a potential corresponding to a video signal input at the time of selection, the pixel 180102 maintains (for example, luminance, transmittance, voltage of a storage capacitor, or the like) corresponding to the video signal.

Note that the structure of the display device is not limited to FIG. For example, a wiring (such as a scan line, a signal line, a power supply line, a capacitor line, or a common line) may be newly added depending on the configuration of the pixel 180102. As another example, circuits having various functions may be added.

FIG. 66 shows an example of a timing chart for explaining the operation of the display device.

The timing chart of FIG. 66 shows one frame period corresponding to a period in which an image for one screen is displayed. The one frame period is not particularly limited, but is preferably at least 1/60 seconds or less so that a person who views the image does not feel flicker.

In the timing chart of FIG. 66, the first scanning line G1, the i-th scanning line Gi (scanning line G1
This shows the timing when any one of Gm to Gm, the (i + 1) -th scan line Gi + 1 and the m-th scan line Gm are selected.

Note that at the same time a scan line is selected, the pixel 180102 connected to the scan line is also selected. For example, when the i-th scan line Gi is selected, the pixel 180102 connected to the i-th scan line Gi is also selected.

The scanning lines G1 to Gm are selected in order from the scanning line G1 in the first row to the scanning line Gm in the mth row (hereinafter, also referred to as scanning). For example, during a period in which the scan line Gi in the i-th row is selected, scan lines (G1 to Gi-1, Gi + 1 to Gm other than the scan line Gi in the i-th row) are selected.
) Is not selected. Then, in the next period, the scan line Gi + 1 in the (i + 1) th row is selected. Note that a period in which one scan line is selected is referred to as one gate selection period.

Thus, when a scan line in a row is selected, the plurality of pixels 180 connected to the scan line is selected.
A video signal is input to the signal line 102 from each of the signal lines G1 to Gm. For example, i
While the scanning line Gi of the line is selected, the plurality of pixels 180102 connected to the scanning line Gi of the i-th line respectively input arbitrary video signals from the respective signal lines S1 to Sn.
Thus, the plurality of individual pixels 180102 can be independently controlled by the scan signal and the video signal.

Next, the case where one gate selection period is divided into a plurality of sub gate selection periods will be described.
FIG. 67 shows a timing chart in the case where one gate selection period is divided into two sub gate selection periods (a first sub gate selection period and a second sub gate selection period).

Note that one gate selection period can be divided into three or more subgate selection periods.

The timing chart of FIG. 67 shows one frame period corresponding to a period in which an image for one screen is displayed. The one frame period is not particularly limited, but is preferably at least 1/60 seconds or less so that a person who views the image does not feel flicker.

Note that one frame consists of two subframes (first and second subframes)
It is divided into

The timing chart of FIG. 67 shows the scan line Gi of the i-th row, the scan line Gi + 1 of the i + 1-th row
The timing at which the scanning line Gj (any one of the scanning lines Gi + 1 to Gm) in the row, the scanning line in the j + 1th row and the scanning line Gj + 1 in the Gj + 1th row are selected is shown.

Note that at the same time a scan line is selected, the pixel 180102 connected to the scan line is also selected. For example, when the i-th scan line Gi is selected, the pixel 180102 connected to the i-th scan line Gi is also selected.

Each of the scanning lines G1 to Gm is sequentially scanned within each subgate selection period. For example, in a certain one gate selection period, the scan line Gi in the i-th row is selected in the first subgate selection period, and the scan line Gj in the j-th row is selected in the second subgate selection period.
Then, in one gate selection period, it becomes possible to operate as if scanning signals for two rows were simultaneously selected. At this time, separate video signals are input to the signal lines S1 to Sn in the first subgate selection period and the second subgate selection period. Therefore,
A plurality of pixels 180102 connected to the i-th row and a plurality of pixels 1 connected to the j-th row
A separate video signal can be input to the 80102.

Next, a driving method for converting a frame rate (also referred to as an input frame rate) of input image data and a frame rate (also referred to as a display frame rate) of display will be described. The frame rate is the number of frames per second, and the unit is Hz.

In the present embodiment, the input frame rate may not necessarily coincide with the display frame rate. When the input frame rate and the display frame rate are different, the frame rate can be converted by a circuit (frame rate conversion circuit) that converts the frame rate of the image data. By doing this, even when the input frame rate and the display frame rate are different, display can be performed at various display frame rates.

When the input frame rate is larger than the display frame rate, it is possible to convert to various display frame rates and perform display by discarding part of the input image data.
In this case, since the display frame rate can be reduced, the operating frequency of the drive circuit for displaying can be reduced, and power consumption can be reduced. On the other hand, when the input frame rate is smaller than the display frame rate, all or part of the input image data is displayed a plurality of times, another image is generated from the input image data, and the input image data is It is possible to convert to various display frame rates and perform display by using means such as generating an unrelated image. In this case, the quality of the moving image can be improved by increasing the display frame rate.

In the present embodiment, a frame rate conversion method when the input frame rate is smaller than the display frame rate will be described in detail. The frame rate conversion method in the case where the input frame rate is larger than the display frame rate can be realized by performing the reverse procedure of the frame rate conversion method in the case where the input frame rate is smaller than the display frame rate. it can.

In the present embodiment, an image displayed at the same frame rate as the input frame rate is referred to as a basic image. On the other hand, an image displayed at a frame rate different from that of the basic image and displayed to match the input frame rate with the display frame rate will be referred to as an interpolated image. As the basic image, the same image as the input image data can be used. The same image as the basic image can be used as the interpolation image. Furthermore, an image different from the basic image may be created, and the created image may be used as an interpolation image.

When creating an interpolation image, a method of detecting temporal change (movement of an image) of input image data and using an image in an intermediate state of these as an interpolation image, an image obtained by multiplying the luminance of a basic image by a coefficient A method of making the interpolation image, creating a plurality of different images from the input image data and presenting the plurality of images sequentially in time (one of the plurality of images is used as a basic image,
There is a method of causing the observer to perceive as if the image corresponding to the input image data is displayed by making the remaining the interpolation image). As a method of creating a plurality of different images from the input image data, there are a method of converting gamma values of the input image data, a method of dividing tone values included in the input image data, and the like.

The image in the intermediate state (intermediate image) is an image obtained by detecting a temporal change (movement of the image) of the input image data and interpolating the detected movement. Determining an intermediate image by such a method is referred to as motion compensation.

Next, a specific example of the frame rate conversion method will be described. According to this method, it is possible to realize frame rate conversion of arbitrary rational number (n / m) times. Here, n and m are integers of 1 or more. The frame rate conversion method in the present embodiment can be divided into the first step and the second step and handled. Here, the first step is a step of frame rate conversion to an arbitrary rational number (n / m). Here, a basic image may be used as the interpolation image, or an intermediate image obtained by motion compensation may be used as the interpolation image. In the second step, a plurality of different images (sub-images) are created from the input image data or each frame rate converted image in the first step, and the plurality of sub-images are temporally continuous. Step for performing the display method. By using the method according to the second step, although it is actually displaying a plurality of different images, it can also be perceived visually by the human eye as if the original image was displayed.

In the frame rate conversion method according to the present embodiment, both the first step and the second step may be used, or the first step may be omitted and only the second step may be used. Step 2 may be omitted and only the first step may be used.

First, as the first step, frame rate conversion of arbitrary rational number (n / m) times will be described. (Refer to FIG. 68) In FIG. 68, the horizontal axis is time, and the vertical axis is shown by performing classification for various n and m. The graphic in FIG. 68 represents a schematic view of the displayed image, and the timing at which it is displayed by its lateral position. Furthermore, it is assumed that the movement of the image is schematically represented by the points displayed in the figure. However, this is an example for explanation and the displayed image is not limited to this. This method can be applied to various images.

The period Tin represents the period of input image data. The period of the input image data corresponds to the input frame rate. For example, when the input frame rate is 60 Hz, the period of input image data is 1/60 seconds. Similarly, if the input frame rate is 50 Hz, then
The cycle of input image data is 1/50 seconds. Thus, the period of the input image data (unit:
Seconds) is the reciprocal of the input frame rate (unit: Hz). Note that various input frame rates can be used. For example, 24 Hz, 50 Hz, 60 Hz, 70 Hz,
48 Hz, 100 Hz, 120 Hz, 140 Hz, etc. can be mentioned. Where 2
4 Hz is a frame rate used for film movies and the like. 50 Hz is a frame rate used for video signals and the like of the PAL standard. The 60 Hz is a frame rate used for a video signal or the like of the NTSC standard. 70 Hz is a frame rate used for a display input signal or the like of a personal computer. 48Hz, 100Hz, 120Hz,
140 Hz is a frame rate twice as high as these. The frame rate is not limited to twice, and may be a frame rate of various multiples. As described above, according to the method described in the present embodiment, frame rate conversion can be realized for input signals of various standards.

The procedure of frame rate conversion of arbitrary rational number (n / m) times in the first step is as follows.
As the procedure 1, the k-th interpolation image for the first basic image (k is an integer of 1 or more; the initial value is 1
Determine the display timing of). It is assumed that the display timing of the k-th interpolation image is a point at which a period obtained by multiplying the cycle of input image data by k (m / n) has passed since the display of the first basic image.
In step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the k-th interpolation image is an integer. If it is an integer, the (k (m / n) +1) -th basic image is displayed at the display timing of the k-th interpolation image, and the first step is ended. If it is not an integer, proceed to step 3.
In step 3, an image to be used as the k-th interpolation image is determined. Specifically, the coefficient k (m / n) used to determine the display timing of the k-th interpolation image is converted into the form of x + y / n. Here, x and y are integers, and y is a number smaller than n. Then, when the k-th interpolation image is an intermediate image determined by motion compensation, the k-th interpolation image is
An intermediate image is obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the basic image of (1) to the (x + 2) basic image by (y / n). When the k-th interpolation image is the same as the basic image, the (x + 1) -th basic image can be used. The method of obtaining the intermediate image as an image corresponding to the movement obtained by multiplying the movement of the image by (y / n) will be described in detail in another part.
In step 4, the interpolation image of interest is moved to the next interpolation image. Specifically, the value of k is increased by 1, and the process returns to step 1.

Next, in the procedure in the first step, the values of n and m are specifically shown and described in detail.

The mechanism for executing the procedure in the first step may be implemented in the device or may be determined in advance at the design stage of the device. If a mechanism for executing the procedure in the first step is implemented in the device, it is possible to switch the driving method so that the optimum operation according to the situation is performed. Note that the conditions mentioned here are the contents of the image data, the environment inside and outside the device (temperature, humidity, pressure, light, sound, magnetic field, electric field, radiation dose,
Includes altitude, acceleration, travel speed, etc., user settings, software versions, etc. On the other hand, if the mechanism for executing the procedure in the first step is determined in advance at the design stage of the apparatus, the drive circuit optimum for each drive method can be used, and the mechanism is determined. Thus, it is possible to expect a reduction in manufacturing cost due to mass production effects.

In the case of n = 1, m = 1, that is, when the conversion ratio (n / m) is 1 (n = 1, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolated image with respect to the first basic image is determined. As for the display timing of the first interpolation image, the period of the input image data is k (m (m) after the first basic image is displayed.
It is the time when the period of / n) times or 1 time has passed.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the first interpolation image, the (k (m / n) +1) th, ie, the second basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 1, the kth image is a basic image, the (k + 1) th image is a basic image, and the image display cycle is one time of the cycle of the input image data. Do.

As a specific expression, when the conversion ratio is 1 (n / m = 1),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
A method of driving a display device, which sequentially displays the (k + 1) th image at intervals equal to the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) -th image is displayed according to the (i + 1) -th image data.

Here, when the conversion ratio is 1, since the frame rate conversion circuit can be omitted, there is an advantage that the manufacturing cost can be reduced. Furthermore, when the conversion ratio is 1, it has the advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 1. Furthermore, when the conversion ratio is 1, it has the advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 1.

In the case of n = 2, m = 1, that is, when the conversion ratio (n / m) is 2 (n = 2, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolated image with respect to the first basic image is determined. As for the display timing of the first interpolation image, the period of the input image data is k (m (m) after the first basic image is displayed.
At this point, a period obtained by multiplying / n) times, that is, 1⁄2 times, has elapsed.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 1/2, it is not an integer. Therefore, the procedure goes to step 3.

In step 3, an image to be used as a first interpolation image is determined. Therefore, the factor 1/2 is x
Convert to + y / n form. In the case of the coefficient 1⁄2, x = 0 and y = 1. Then, when the first interpolation image is an intermediate image determined by motion compensation, the first interpolation image is
1) That is, an intermediate image is obtained as an image corresponding to a motion obtained by multiplying the movement of the image from the first basic image to the (x + 2) th, ie, the second basic image by y / n times or 1/2 times. First
When making the interpolation image of the same image as the basic image, it is possible to use the (x + 1) th basic image, that is, the first basic image.

According to the procedure up to this point, the display timing of the first interpolation image and the image to be displayed as the first interpolation image can be determined. Next, in step 4, the interpolation image of interest is transferred from the first interpolation image to the second interpolation image. That is, change k from 1 to 2 and return to step 1.

When k = 2, procedure 1 determines the display timing of the second interpolation image with respect to the first basic image. The display timing of the second interpolation image is a point at which a period obtained by multiplying the period of the input image data by k (m / n), that is, by one, has elapsed since the display of the first basic image.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the second interpolated image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the second interpolation image, the (k (m / n) +1) th, ie, the second basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 2 (n / m = 2),
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is a basic image, and the image display cycle is half of the cycle of the input image data.

Specifically, when the conversion ratio is 2 (n / m = 2),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
A method of driving a display device, which sequentially displays the (k + 2) th image at an interval of 1/2 times the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) -th image is displayed according to image data corresponding to a motion obtained by halving the motion from the i-th image data to the (i + 1) -th image data.
The (k + 2) -th image is displayed according to the (i + 1) -th image data.

As still another specific expression, when the conversion ratio is 2 (n / m = 2),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
A method of driving a display device, which sequentially displays the (k + 2) th image at an interval of 1/2 times the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) -th image is displayed according to the (i + 1) -th image data.

Specifically, when the conversion ratio is 2, it is also called double speed driving or simply double speed driving.
For example, if the input frame rate is 60 Hz, the display frame rate is
120 Hz drive). And an image will be displayed twice continuously with respect to one input image. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display device is an active matrix liquid crystal display device,
In particular, the image quality improvement effect is remarkable. This relates to the problem of insufficient writing voltage due to so-called dynamic capacitance, in which the capacitance of the liquid crystal element fluctuates due to the applied voltage. That is, by making the display frame rate larger than the input frame rate, the frequency of the image data writing operation can be increased, so that the failure such as the tailing of the moving image and the afterimage caused by the shortage of the writing voltage due to the dynamic capacitance is reduced. be able to. Furthermore, it is also effective to combine the AC drive and the 120 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 120 Hz and setting the frequency of AC drive to an integral multiple or an integral fraction of it (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes.

In the case of n = 3, m = 1, that is, when the conversion ratio (n / m) is 3 (where n = 3, m = 1 in FIG. 68), the operation in the first step is as follows. First, when k = 1, in step 1, the display timing of the first interpolated image with respect to the first basic image is determined. As for the display timing of the first interpolation image, the period of the input image data is k (m (m
At this point, a period obtained by multiplying / n) times or 1/3 times has elapsed.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 1/3, it is not an integer. Therefore, the procedure goes to step 3.

In step 3, an image to be used as a first interpolation image is determined. Therefore, the factor 1/3 is x
Convert to + y / n form. In the case of the coefficient 1/3, x = 0 and y = 1. Then, when the first interpolation image is an intermediate image determined by motion compensation, the first interpolation image is
1) That is, an intermediate image is obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x + 2) th, ie, the second basic image by y / n times or 1/3 times. First
When making the interpolation image of the same image as the basic image, it is possible to use the (x + 1) th basic image, that is, the first basic image.

According to the procedure up to this point, the display timing of the first interpolation image and the image to be displayed as the first interpolation image can be determined. Next, in step 4, the interpolation image of interest is transferred from the first interpolation image to the second interpolation image. That is, change k from 1 to 2 and return to step 1.

When k = 2, procedure 1 determines the display timing of the second interpolation image with respect to the first basic image. The display timing of the second interpolation image is a point at which a period obtained by multiplying the cycle of the input image data by k (m / n), that is, 2/3, has passed since the display of the first basic image.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the second interpolated image is an integer. Here, since the coefficient k (m / n) is 2/3, it is not an integer. Therefore, the procedure goes to step 3.

In step 3, an image to be used as a second interpolation image is determined. Therefore, the factor 2/3 x
Convert to + y / n form. In the case of coefficient 2/3, x = 0 and y = 2. Then, when the second interpolation image is an intermediate image obtained by motion compensation, the second interpolation image is
1) That is, an intermediate image is obtained as an image corresponding to a motion obtained by multiplying the movement of the image from the first basic image to the (x + 2) th, ie, the second basic image by y / n times or 2/3 times. Second
When making the interpolation image of the same image as the basic image, it is possible to use the (x + 1) th basic image, that is, the first basic image.

According to the procedure up to this point, the display timing of the second interpolation image and the image to be displayed as the second interpolation image can be determined. Next, in step 4, the interpolation image of interest is transferred from the second interpolation image to the third interpolation image. That is, change k from 2 to 3 and return to step 1.

When k = 3, in step 1, the display timing of the third interpolated image with respect to the first basic image is determined. The display timing of the third interpolation image is a point at which a period obtained by multiplying the period of the input image data by k (m / n), that is, by one, has elapsed since the display of the first basic image.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the third interpolated image is an integer. Here, since the coefficient k (m / n) is 1, it is an integer. Therefore, at the display timing of the third interpolation image, the (k (m / n) +1) th, ie, the second basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 3 (n / m = 3),
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is an interpolated image,
The (k + 3) th image is a basic image, and the image display cycle is 1/3 times the cycle of the input image data.

Specifically, when the conversion ratio is 3 (n / m = 3),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
A driving method of a display device for sequentially displaying an image of (k + 3) at intervals of 1/3 times of a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 1/3.
The (k + 2) -th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image to the i + 1-th image by 2/3.
The (k + 3) th image is displayed according to the (i + 1) th image data.

As still another specific expression, when the conversion ratio is 3 (n / m = 3),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
A driving method of a display device for sequentially displaying an image of (k + 3) at intervals of 1/3 times of a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) th image is displayed according to the ith image data,
The (k + 3) th image is displayed according to the (i + 1) th image data.

Here, when the conversion ratio is 3, there is an advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 3. Furthermore, when the conversion ratio is 3, it has the advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 3.

Specifically, when the conversion ratio is 3, it is also called triple speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, an image is displayed three times consecutively for one input image. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, AC drive of the liquid crystal display and 180 Hz
It is also effective to combine the drive. That is, the driving frequency of the liquid crystal display device is 180H.
while the frequency of the AC drive is an integral multiple or an integer fraction (eg, 45 Hz, 9
By setting the frequency to 0 Hz, 180 Hz, 360 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to an extent that human eyes do not perceive it.

n = 3, m = 2, that is, the conversion ratio (n / m) is 3/2 (n = 3, m = 2 in FIG. 68)
In this case, the operation in the first step is as follows. First, when k = 1, step 1
Then, the display timing of the first interpolation image with respect to the first basic image is determined. The display timing of the first interpolation image is set to k cycles of the input image data after the first basic image is displayed.
It is the time when the (m / n) times, that is, the 2/3 times, has elapsed.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the first interpolated image is an integer. Here, since the coefficient k (m / n) is 2/3, it is not an integer. Therefore, the procedure goes to step 3.

In step 3, an image to be used as a first interpolation image is determined. Therefore, the factor 2/3 x
Convert to + y / n form. In the case of coefficient 2/3, x = 0 and y = 2. Then, when the first interpolation image is an intermediate image determined by motion compensation, the first interpolation image is
1) That is, an intermediate image is obtained as an image corresponding to a motion obtained by multiplying the movement of the image from the first basic image to the (x + 2) th, ie, the second basic image by y / n times or 2/3 times. First
When making the interpolation image of the same image as the basic image, it is possible to use the (x + 1) th basic image, that is, the first basic image.

According to the procedure up to this point, the display timing of the first interpolation image and the image to be displayed as the first interpolation image can be determined. Next, in step 4, the interpolation image of interest is transferred from the first interpolation image to the second interpolation image. That is, change k from 1 to 2 and return to step 1.

When k = 2, procedure 1 determines the display timing of the second interpolation image with respect to the first basic image. The display timing of the second interpolation image is a point at which a period obtained by multiplying the period of the input image data by k (m / n), that is, 4/3, has elapsed since the display of the first basic image.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the second interpolated image is an integer. Here, since the coefficient k (m / n) is 4/3, it is not an integer. Therefore, the procedure goes to step 3.

In step 3, an image to be used as a second interpolation image is determined. For that, x coefficient 4/3
Convert to + y / n form. In the case of the coefficient 4/3, x = 1 and y = 1. Then, when the second interpolation image is an intermediate image obtained by motion compensation, the second interpolation image is
1) That is, an intermediate image is obtained as an image corresponding to a motion obtained by multiplying the movement of the image from the second basic image to the (x + 2) th, ie, the third basic image by y / n times or 1/3 times. Second
When making the interpolation image of the same image as the basic image, the (x + 1) th or second basic image can be used.

According to the procedure up to this point, the display timing of the second interpolation image and the image to be displayed as the second interpolation image can be determined. Next, in step 4, the interpolation image of interest is transferred from the second interpolation image to the third interpolation image. That is, change k from 2 to 3 and return to step 1.

When k = 3, in step 1, the display timing of the third interpolated image with respect to the first basic image is determined. The display timing of the third interpolation image is a point at which a period obtained by multiplying the cycle of the input image data by k (m / n), that is, twice, has passed since the display of the first basic image.

Next, in step 2, it is determined whether the coefficient k (m / n) used to determine the display timing of the third interpolated image is an integer. Here, since the coefficient k (m / n) is 2, it is an integer. Therefore, at the display timing of the third interpolation image, the (k (m / n) +1) th, ie, the third basic image is displayed, and the first step is ended.

That is, when the conversion ratio is 3/2 (n / m = 3/2),
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is an interpolated image,
The (k + 3) th image is a basic image, and the image display period is 2/3 times the period of the input image data.

Specifically, when the conversion ratio is 3/2 (n / m = 3/2),
I-th (i is a positive integer) image data,
And the (i + 1) th image data,
The (i + 2) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
It is a driving method of a display device for sequentially displaying an image of (k + 3) at an interval of 2/3 times a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 2/3.
The (k + 2) -th image has a 1/3 movement from the (i + 1) -th image to the (i + 2) -th image.
Displayed according to the image data corresponding to the doubled movement,
The (k + 3) th image is displayed according to the (i + 2) th image data.

As still another specific expression, when the conversion ratio is 3/2 (n / m = 3/2),
I-th (i is a positive integer) image data,
And the (i + 1) th image data,
The (i + 2) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
It is a driving method of a display device for sequentially displaying an image of (k + 3) at an interval of 2/3 times a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) th image is displayed according to the (i + 1) th image data,
The (k + 3) th image is displayed according to the (i + 2) th image data.

Here, when the conversion ratio is 3/2, there is an advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 3/2. Furthermore, if the conversion ratio is 3/2, the conversion ratio is 3 /
It has the advantage that power consumption and manufacturing cost can be reduced more than the case of larger than two.

Specifically, when the conversion ratio is 3/2, it is also called 3 / 2-speed drive or 1.5-speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 90
It is Hz (90 Hz drive). Then, the image is displayed three times consecutively for two input images. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to the drive method with a large drive frequency such as 120 Hz drive (double speed drive) and 180 Hz drive (3 × speed drive), the motion frequency of the circuit for obtaining an intermediate image can be reduced by motion compensation. , Manufacturing cost and power consumption can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided.
The image quality improvement effect is particularly remarkable with respect to a failure such as an afterimage. Furthermore, it is also effective to combine AC drive and 90 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 90 Hz, the frequency of the AC drive is an integral multiple or an integer fraction (eg
By setting the frequency to 0 Hz, 45 Hz, 90 Hz, 180 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to such an extent that human eyes do not perceive it.

Although details of the procedure are omitted for positive integers n and m other than the above, the conversion ratio may be set as an arbitrary rational number (n / m) according to the procedure of frame rate conversion in the first step. it can. Among the combinations of positive integers n and m, the conversion ratio (n /
For combinations where m) can be reduced, conversion ratios after reduction can be handled in the same manner.

For example, in the case of n = 4, m = 1, that is, when the conversion ratio (n / m) is 4 (n = 4, m = 1 in FIG. 68),
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is an interpolated image,
The (k + 3) th image is an interpolated image,
The (k + 4) th image is a basic image, and the image display cycle is characterized by being 1⁄4 of the cycle of the input image data.

More specifically, when the conversion ratio is 4 (n / m = 4),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
A driving method of a display device for sequentially displaying an image of (k + 4) at an interval of 1⁄4 of a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 1/4.
The (k + 2) -th image is displayed according to image data corresponding to a motion obtained by halving the motion from the i-th image data to the (i + 1) -th image data.
The (k + 3) th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the ith image data to the (i + 1) th image data by 3/4.
The (k + 4) th image is displayed according to the (i + 1) th image data.

As still another specific expression, when the conversion ratio is 4 (n / m = 4),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
A driving method of a display device for sequentially displaying an image of (k + 4) at an interval of 1⁄4 of a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) th image is displayed according to the ith image data,
The (k + 3) th image is displayed according to the ith image data,
The (k + 4) th image is displayed according to the (i + 1) th image data.

Here, when the conversion ratio is 4, there is an advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 4. Furthermore, when the conversion ratio is 4, it has the advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 4.

Specifically, when the conversion ratio is 4, it is also called quadruple speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). And an image will be displayed continuously 4 times with respect to one input image. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, 120
As compared with a drive method with a small drive frequency such as Hz drive (double speed drive) and 180 Hz drive (3 × speed drive), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolation image. The motion can be smoothed and the quality of moving pictures can be significantly improved. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 240 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 240 Hz and setting the frequency of the AC drive to an integral multiple or an integer fraction (for example, 30 Hz, 40 Hz, 60 Hz, 120 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes.

Further, for example, n = 4 and m = 3, that is, the conversion ratio (n / m) is 4/3 (n in FIG. 68).
In the case of 4, m = 3),
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is an interpolated image,
The (k + 3) th image is an interpolated image,
The (k + 4) th image is a basic image, and the image display cycle is characterized by being 3/4 times the cycle of the input image data.

More specifically, when the conversion ratio is 4/3 (n / m = 4/3),
I-th (i is a positive integer) image data,
And the (i + 1) th image data,
And the (i + 2) th image data,
The (i + 3) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
A driving method of a display device for sequentially displaying an image of (k + 4) at an interval of 3⁄4 of a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 3/4.
The (k + 2) -th image is half the motion from the (i + 1) -th image to the (i + 2) -th image.
Displayed according to the image data corresponding to the doubled movement,
The (k + 3) th image has a 1/4 movement from the (i + 2) th image to the (i + 3) th image.
Displayed according to the image data corresponding to the doubled movement,
The (k + 4) th image is displayed according to the (i + 3) th image data.

As still another specific expression, when the conversion ratio is 4/3 (n / m = 4/3),
I-th (i is a positive integer) image data,
And the (i + 1) th image data,
And the (i + 2) th image data,
The (i + 3) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
A driving method of a display device for sequentially displaying an image of (k + 4) at an interval of 3⁄4 of a cycle of input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) th image is displayed according to the (i + 1) th image data,
The (k + 3) th image is displayed according to the (i + 2) th image data,
The (k + 4) th image is displayed according to the (i + 3) th image data.

Here, when the conversion ratio is 4/3, it has an advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 4/3. Furthermore, if the conversion ratio is 4/3, the conversion ratio is 4 /
It has the advantage that power consumption and manufacturing cost can be reduced compared with the case of greater than three.

Specifically, when the conversion ratio is 4/3, it is also called 4/3 double speed drive or 1.25 double speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 8
It is 0 Hz (80 Hz drive). Then, images are displayed four times consecutively for three input images. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to the drive method with a large drive frequency such as 120 Hz drive (double speed drive) and 180 Hz drive (3 × speed drive), the motion frequency of the circuit for obtaining an intermediate image can be reduced by motion compensation. , Manufacturing cost and power consumption can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 80 Hz drive of the liquid crystal display device. That is, while the driving frequency of the liquid crystal display device is 80 Hz, the frequency of AC driving is an integral multiple or an integer fraction of that (for example,
By setting the frequency to 40 Hz, 80 Hz, 160 Hz, 240 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to such an extent that human eyes do not perceive it.

Further, for example, n = 5, m = 1, that is, the conversion ratio (n / m) is 5 (n = 5 in FIG. 68,
In the case of m = 1),
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is an interpolated image,
The (k + 3) th image is an interpolated image,
The (k + 4) th image is an interpolated image,
The (k + 5) th image is a basic image, and the image display period is 1⁄5 of the period of the input image data.

More specifically, when the conversion ratio is 5 (n / m = 5),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
With the k + 4 image,
It is a driving method of a display device for sequentially displaying the (k + 5) th image at an interval of 1⁄5 times the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 1/5.
The (k + 2) -th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 2/5.
The (k + 3) th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the ith image data to the (i + 1) th image data by 3/5.
The (k + 4) th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the ith image data to the (i + 1) th image data by 4/5.
The (k + 5) th image is displayed according to the (i + 1) th image data.

As still another specific expression, when the conversion ratio is 5 (n / m = 5),
I-th (i is a positive integer) image data,
The (i + 1) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
With the k + 4 image,
It is a driving method of a display device for sequentially displaying the (k + 5) th image at an interval of 1⁄5 times the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) th image is displayed according to the ith image data,
The (k + 3) th image is displayed according to the ith image data,
The (k + 4) th image is displayed according to the ith image data,
The (k + 5) th image is displayed according to the (i + 1) th image data.

Here, when the conversion ratio is 5, there is an advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 5. Furthermore, when the conversion ratio is 5, it has the advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 5.

Specifically, when the conversion ratio is 5, it is also called 5 × speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, the image is continuously displayed five times for one input image. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, 120
As compared with a drive method with a small drive frequency such as Hz drive (double speed drive) and 180 Hz drive (3 × speed drive), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolation image. The motion can be smoothed and the quality of moving pictures can be significantly improved. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 300 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 300 Hz and setting the frequency of AC drive to an integral multiple or an integer fraction (for example, 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes.

Further, for example, n = 5, m = 2, that is, the conversion ratio (n / m) is 5/2 (n in FIG. 68).
In the case of 5, m = 2))
The kth image is a basic image,
The (k + 1) th image is an interpolated image,
The (k + 2) th image is an interpolated image,
The (k + 3) th image is an interpolated image,
The (k + 4) th image is an interpolated image,
The (k + 5) th image is a basic image, and the image display period is 1⁄5 of the period of the input image data.

More specifically, when the conversion ratio is 5/2 (n / m = 5/2),
I-th (i is a positive integer) image data,
And the (i + 1) th image data,
The (i + 2) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
With the k + 4 image,
It is a driving method of a display device for sequentially displaying the (k + 5) th image at an interval of 1⁄5 times the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to image data corresponding to a movement obtained by multiplying the movement from the ith image data to the (i + 1) th image data by 2/5.
The (k + 2) -th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the (i + 1) -th image data by 4/5.
The (k + 3) th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the (i + 1) th image data to the (i + 2) th image data by 1/5.
The (k + 4) th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the (i + 1) th image data to the (i + 2) th image data by 3/5.
The (k + 5) th image is displayed according to the (i + 2) th image data.

As still another specific expression, when the conversion ratio is 5/2 (n / m = 5/2),
I-th (i is a positive integer) image data,
And the (i + 1) th image data,
The (i + 2) th image data is sequentially input as input image data in a fixed cycle,
The kth (k is a positive integer) image,
The kth +1 image,
And the k + 2 image,
With the k + 3 image,
With the k + 4 image,
It is a driving method of a display device for sequentially displaying the (k + 5) th image at an interval of 1⁄5 times the period of the input image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) th image is displayed according to the ith image data,
The (k + 2) th image is displayed according to the ith image data,
The (k + 3) th image is displayed according to the (i + 1) th image data,
The (k + 4) th image is displayed according to the (i + 1) th image data,
The (k + 5) th image is displayed according to the (i + 2) th image data.

Here, when the conversion ratio is 5/2, it has an advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 5/2. Furthermore, when the conversion ratio is 5/2, it has the advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 5.

Specifically, when the conversion ratio is 5, it is also referred to as 5 / 2-speed drive or 2.5-speed drive. For example, if the input frame rate is 60 Hz, the display frame rate is 150 H
z (150 Hz drive). Then, the image is displayed five times consecutively for two input images. At this time, when the interpolation image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, as compared with a drive method with a small drive frequency such as 120 Hz drive (double-speed drive), an intermediate image obtained by motion compensation with higher accuracy can be used as an interpolation image, so the motion of moving pictures is smoothed further. It is possible to significantly improve the quality of moving pictures. Furthermore, as compared with a driving method with a large driving frequency such as 180 Hz driving (3 × speed driving), the operation frequency of the circuit for obtaining an intermediate image can be reduced by motion compensation, so inexpensive circuits can be used, manufacturing cost and power consumption It can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 150 Hz drive of the liquid crystal display device. That is, the driving frequency of the liquid crystal display device is
While the frequency of the AC drive is an integral multiple or an integer fraction (eg, 30 Hz, 50
By setting the frequency to Hz, 75 Hz, 150 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to an extent that it is not perceived by human eyes.

Thus, by setting the positive integers n and m variously, the conversion ratio can be set as an arbitrary rational number (n / m). Although detailed description is omitted, in the range where n is 10 or less,
n = 1, m = 1, that is, conversion ratio (n / m) = 1 (1 × driving, 60 Hz),
n = 2, m = 1, that is, conversion ratio (n / m) = 2 (double speed driving, 120 Hz),
n = 3, m = 1, that is, conversion ratio (n / m) = 3 (3 × speed drive, 180 Hz),
n = 3, m = 2, that is, conversion ratio (n / m) = 3/2 (3 / 2-speed drive, 90 Hz),
n = 4, m = 1, that is, conversion ratio (n / m) = 4 (quadruple speed drive, 240 Hz),
n = 4, m = 3, that is, conversion ratio (n / m) = 4/3 (4/3 speed drive, 80 Hz),
n = 5, m = 1, that is, conversion ratio (n / m) = 5/1 (5-fold speed drive, 300 Hz),
n = 5, m = 2, that is, conversion ratio (n / m) = 5/2 (5 / 2-speed drive, 150 Hz),
n = 5, m = 3, that is, conversion ratio (n / m) = 5/3 (5 / 3-speed drive, 100 Hz),
n = 5, m = 4, that is, conversion ratio (n / m) = 5/4 (5 / 4-speed drive, 75 Hz),
n = 6, m = 1, that is, conversion ratio (n / m) = 6 (6-fold speed drive, 360 Hz),
n = 6, m = 5, that is, conversion ratio (n / m) = 6/5 (6/5 speed drive, 72 Hz),
n = 7, m = 1, that is, conversion ratio (n / m) = 7 (7 × driving, 420 Hz),
n = 7, m = 2, that is, conversion ratio (n / m) = 7/2 (7 / 2-speed drive, 210 Hz),
n = 7, m = 3, that is, conversion ratio (n / m) = 7/3 (7/3 speed drive, 140 Hz),
n = 7, m = 4, that is, conversion ratio (n / m) = 7/4 (7/4 speed drive, 105 Hz),
n = 7, m = 5, that is, conversion ratio (n / m) = 7/5 (7/5 double speed drive, 84 Hz),
n = 7, m = 6, that is, conversion ratio (n / m) = 7/6 (7/6 speed drive, 70 Hz),
n = 8, m = 1, that is, conversion ratio (n / m) = 8 (8 × driving, 480 Hz),
n = 8, m = 3, that is, conversion ratio (n / m) = 8/3 (8 / 3-speed drive, 160 Hz),
n = 8, m = 5, that is, conversion ratio (n / m) = 8/5 (8/5 speed drive, 96 Hz),
n = 8, m = 7, that is, conversion ratio (n / m) = 8/7 (8/7 double speed drive, 68.6 Hz)
,
n = 9, m = 1, that is, conversion ratio (n / m) = 9 (9 × driving, 540 Hz),
n = 9, m = 2, that is, conversion ratio (n / m) = 9/2 (9 / 2-speed drive, 270 Hz),
n = 9, m = 4, that is, conversion ratio (n / m) = 9/4 (9/4 speed drive, 135 Hz),
n = 9, m = 5, that is, conversion ratio (n / m) = 9/5 (9 / 5-speed drive, 108 Hz),
n = 9, m = 7, that is, conversion ratio (n / m) = 9/7 (9/7 double speed drive, 77.1 Hz)
,
n = 9, m = 8, ie conversion ratio (n / m) = 9/8 (9/8 double speed drive, 67.5 Hz)
,
n = 10, m = 1, that is, conversion ratio (n / m) = 10 (10 × speed drive, 600 Hz),
n = 10, m = 3, that is, conversion ratio (n / m) = 10/3 (10/3 speed drive, 200 H
z),
n = 10, m = 7, that is, conversion ratio (n / m) = 10/7 (10/7 double speed drive, 85.7)
Hz),
n = 10, m = 9, that is, conversion ratio (n / m) = 10/9 (10/9 double speed drive, 66.7)
Hz),
Combinations of the above are conceivable. Note that the notation of frequency is an example when the input frame rate is 60 Hz, and for other input frame rates, a value obtained by integrating each conversion ratio with the input frame rate is the drive frequency.

In the case where n is an integer greater than 10, although the specific n and m numbers are not listed, the frame rate conversion procedure in the first step can be applied to various n and m. Is clear.

Note that the conversion ratio can be determined depending on how much of the displayed image is an image that can be displayed without performing motion compensation in the input image data. Specifically, as m is smaller, the proportion of images that can be displayed without performing motion compensation on the input image data is larger. If the frequency of motion compensation is low, the frequency of operation of the circuit that performs motion compensation can be reduced, so that the power consumption can be reduced. Furthermore, an image including an error due to motion compensation (the motion of the image is accurately reflected) Image quality can be improved because the possibility of creating an intermediate image) can be reduced. Such conversion ratio is, for example, 1, 2, 3, 3/2, 4, in the range where n is 10 or less.
5,5 / 2,6,7,7 / 2,8,9,9 / 2,10 are mentioned. By using such a conversion ratio, it is possible to increase the quality of the image and reduce the power consumption, particularly when using an intermediate image obtained by motion compensation as the interpolation image. This is because, when m is 2, the number of images that can be displayed without performing motion compensation on the input image data is relatively large (only 1/2 of the total number of input image data exists) ,
This is because the frequency of motion compensation is reduced. Furthermore, when m is 1, the number of images that can be displayed without performing motion compensation on input image data is large (equal to the total number of input image data), and motion compensation is not performed. is there. On the other hand, as m is larger, it is possible to use an intermediate image created by highly accurate motion compensation, and thus has an advantage that the motion of the image can be smoother.

Note that when the display device is a liquid crystal display device, the conversion ratio can be determined in accordance with the response time of the liquid crystal element. Here, the response time of the liquid crystal element is the time from the change of the voltage applied to the liquid crystal element to the response of the liquid crystal element. In the case where the response time of the liquid crystal element is different depending on the amount of change in voltage applied to the liquid crystal element, an average value of the response times of a plurality of representative voltage changes can be employed. Alternatively, the response time of the liquid crystal element is MPRT (Movin
g Picture Response Time) may be defined.
Then, by frame rate conversion, the conversion ratio can be determined such that the image display cycle becomes close to the response time of the liquid crystal element. Specifically, it is preferable that the response time of the liquid crystal element is a time from a value obtained by integrating the period of the input image data and the reciprocal of the conversion ratio to a half value of this value. By doing this, the image display cycle can be made to match the response time of the liquid crystal element, so that the image quality can be improved. For example, when the response time of the liquid crystal element is 4 milliseconds or more and 8 milliseconds or less, double speed driving (120 Hz driving) can be performed. This is because the image display cycle of the 120 Hz drive is about 8 milliseconds and half of the image display cycle of the 120 Hz drive is about 4 milliseconds. Similarly, for example, when the response time of the liquid crystal element is 3 milliseconds or more and 6 milliseconds or less, triple speed driving (180 Hz driving) can be performed, and the response time of the liquid crystal element is 5
In the case of milliseconds or more and 11 milliseconds or less, 1.5 × speed driving (90 Hz driving) can be performed, and in the case where the response time of the liquid crystal element is 2 milliseconds or more and 4 milliseconds or less, quadruple speed driving (240 Hz driving) And when the response time of the liquid crystal element is 6 ms or more and 12 ms or less, 1).
. It can be 25 × speed drive (80 Hz drive). The same applies to the other drive frequencies.

The conversion ratio can also be determined by the trade-off between the quality of the moving image and the power consumption and the manufacturing cost. That is, while the quality of moving pictures can be improved by increasing the conversion ratio, the power consumption and the manufacturing cost can be reduced by decreasing the conversion ratio. That is, each conversion ratio in the range where n is 10 or less has the following advantages.

When the conversion ratio is 1, the moving picture quality can be improved more than when the conversion ratio is smaller than 1, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 1. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1 time of the cycle of input image data.

When the conversion ratio is 2, the moving picture quality can be improved more than when the conversion ratio is smaller than 2, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 2. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately half of the cycle of the input image data.

When the conversion ratio is 3, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 3, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 3. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1⁄3 of the cycle of the input image data.

When the conversion ratio is 3/2, the moving picture quality can be improved more than when the conversion ratio is smaller than 3/2, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 3/2. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 2/3 of the cycle of the input image data.

When the conversion ratio is 4, the moving picture quality can be improved more than when the conversion ratio is smaller than 4, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 4. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄4 of the cycle of the input image data.

When the conversion ratio is 4/3, the moving picture quality can be improved more than when the conversion ratio is smaller than 4/3, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 4/3. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 3⁄4 of the cycle of the input image data.

When the conversion ratio is 5, the moving picture quality can be improved more than when the conversion ratio is smaller than 5, and the power consumption and the manufacturing cost can be reduced more than when the conversion ratio is larger than 5. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄5 of the period of the input image data.

When the conversion ratio is 5/2, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 5/2, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 5/2. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 2⁄5 of the period of the input image data.

When the conversion ratio is 5/3, the moving picture quality can be improved more than when the conversion ratio is smaller than 5/3, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 5/3. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 3⁄5 of the period of the input image data.

When the conversion ratio is 5/4, the moving picture quality can be improved more than when the conversion ratio is smaller than 5/4, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 5/4. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 4/5 times the period of the input image data.

When the conversion ratio is 6, the moving picture quality can be improved more than when the conversion ratio is smaller than 6, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 6. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄6 of the cycle of the input image data.

When the conversion ratio is 6/5, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 6/5, and power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 6/5. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 5/6 times the cycle of input image data.

When the conversion ratio is 7, the moving picture quality can be improved more than when the conversion ratio is smaller than 7, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 7. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1/7 of the period of the input image data.

When the conversion ratio is 7/2, the moving picture quality can be improved more than when the conversion ratio is smaller than 7/2, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 7/2. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 2/7 times the period of the input image data.

When the conversion ratio is 7/3, the moving picture quality can be improved more than when the conversion ratio is smaller than 7/3, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 7/3. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 3/7 times the period of the input image data.

When the conversion ratio is 7/4, the moving picture quality can be improved more than when the conversion ratio is smaller than 7/4, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 7/4. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 4/7 times the period of the input image data.

When the conversion ratio is 7/5, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 7/5, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 7/5. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 5/7 times the period of the input image data.

When the conversion ratio is 7/6, the moving picture quality can be improved more than when the conversion ratio is smaller than 7/6, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 7/6. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 6/7 times the period of the input image data.

When the conversion ratio is 8, the moving picture quality can be improved more than when the conversion ratio is smaller than 8, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 8. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄8 of the cycle of input image data.

When the conversion ratio is 8/3, the moving picture quality can be improved more than when the conversion ratio is smaller than 8/3, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 8/3. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 3⁄8 of the cycle of the input image data.

When the conversion ratio is 8/5, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 8/5, and power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is larger than 8/5. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 5/8 times the cycle of the input image data.

When the conversion ratio is 8/7, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 8/7, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 8/7. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 7/8 times the period of the input image data.

When the conversion ratio is 9, the moving picture quality can be improved more than when the conversion ratio is smaller than 9, and the power consumption and the manufacturing cost can be reduced more than when the conversion ratio is larger than 9. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1/9 times the period of the input image data.

When the conversion ratio is 9/2, the moving picture quality can be improved more than when the conversion ratio is smaller than 9/2, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 9/2. Furthermore, since m is small, high image quality can be obtained, and power consumption can be reduced. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 2/9 times the period of the input image data.

When the conversion ratio is 9/4, the moving picture quality can be improved more than when the conversion ratio is smaller than 9/4, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 9/4. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 4/9 times the period of the input image data.

When the conversion ratio is 9/5, the moving picture quality can be improved more than when the conversion ratio is smaller than 9/5, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 9/5. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 5/9 times the period of the input image data.

When the conversion ratio is 9/7, the moving picture quality can be improved more than when the conversion ratio is smaller than 9/7, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 9/7. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 7/9 times the period of the input image data.

When the conversion ratio is 9/8, the moving picture quality can be improved more than when the conversion ratio is smaller than 9/8, and the power consumption and the manufacturing cost can be reduced more than when the conversion ratio is larger than 9/8. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 8/9 times the period of the input image data.

When the conversion ratio is 10, the quality of the moving image can be improved compared to when the conversion ratio is less than 10,
Power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 10. Furthermore, m
Is small, power consumption can be reduced while high image quality can be obtained. Furthermore, by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1/10 of the cycle of the input image data,
Image quality can be improved.

When the conversion ratio is 10/3, the moving picture quality can be improved more than when the conversion ratio is smaller than 10/3, and the power consumption and the manufacturing cost can be reduced more than when the conversion ratio is larger than 10/3. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 3/10 times the period of the input image data.

When the conversion ratio is 10/7, the quality of moving pictures can be improved more than when the conversion ratio is smaller than 10/7, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 10/7. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 7/10 times the cycle of input image data.

When the conversion ratio is 10/9, the moving picture quality can be improved more than when the conversion ratio is smaller than 10/9, and power consumption and manufacturing cost can be reduced as compared with the conversion ratio larger than 10/9. Furthermore, since m is large, the motion of the image can be smoother. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 9/10 times the cycle of input image data.

It should be noted that it is apparent that each conversion ratio in the range where n is greater than 10 has similar advantages.

Next, as a second step, an image according to the input image data or each image frame rate converted to an arbitrary rational number (n / m) in the first step (referred to as an original image) A method of creating a plurality of different images (sub-images) and presenting the plurality of sub-images sequentially in time will be described. By doing this, although the user is actually presenting a plurality of images, it can also be perceived visually by the human eye as if one original image was displayed.

Here, among the sub-images created from one original image, the sub-image to be displayed first is referred to as a first sub-image. Here, it is assumed that the timing to display the first sub-image is the same as the timing to display the original image determined in the first step. on the other hand,
The sub-image displayed thereafter is referred to as a second sub-image. The timing for displaying the second sub-image can be determined arbitrarily regardless of the timing for displaying the original image determined in the first step. The image to be actually displayed is an image created from the original image by the method in the second step. Note that various images can be used as the original image for creating the sub image. Note that the number of sub-images is not limited to two, and may be larger than two. In the second step, the number of sub-images is denoted as J (J is an integer of 2 or more). At this time, a sub-image displayed at the same timing as the display timing of the original image determined in the first step is referred to as a first sub-image, and a sub-image subsequently displayed is displayed. Second sub-image, third sub-image,.
, And the Jth sub-image.

Although there are various methods for creating a plurality of sub-images from one original image, the following methods can be mentioned as main ones. One is a method of using the original image as it is as a sub-image. One is a method of distributing the brightness of the original image to a plurality of sub-images. One is a method of using an intermediate image obtained by motion compensation as a sub-image.

Here, the method of distributing the brightness of the original image to a plurality of sub-images can be further divided into a plurality of methods. The following can be mentioned as main ones. One is a method of making at least one sub-image a black image (referred to as a black insertion method). One is
When the brightness of the original image is divided into a plurality of ranges and the brightness in the range is controlled, a method of using only one sub image of all the sub images (referred to as a time division gradation control method) ). First, one sub-image is a bright image in which the gamma value of the original image is changed, and the other sub-image is a dark image in which the gamma value of the original image is changed ).

Each of the above mentioned methods will be briefly described. The method of using the original image as it is as the sub image uses the original image as it is as the first sub image. Furthermore, the original image is used as it is as the second sub-image. By using this method, power consumption and manufacturing cost can be reduced because a circuit for creating a sub-image is not operated or it is not necessary to use the circuit itself. In particular, in the liquid crystal display device, the first
It is preferable to use this method after performing frame rate conversion in which an intermediate image determined by motion compensation is an interpolated image in the step of. The reason is that, by making the intermediate image obtained by the motion compensation as the interpolation image, the same image is repeatedly displayed while smoothing the motion of the moving image, the moving image is caused by the shortage of the writing voltage due to the dynamic capacitance of the liquid crystal element. This is because it is possible to reduce obstacles such as tailing and afterimage.

Next, in the method of distributing the brightness of the original image to a plurality of sub-images, the method of setting the brightness of the image and the length of the period in which the sub-image is displayed will be described in detail. Here, J represents the number of sub-images and is an integer of 2 or more. Lower case j is distinguished from upper case J. It is assumed that j is an integer of 1 or more and J or less.
The brightness of the pixel in normal hold driving is L, and the period of the original image data is T,
The brightness L _j of the pixels in the sub-image of the _j, the length T _j of the period in which the sub image is displayed in the first _j, and when taking a product for L _j and T _j, from which the j = 1 Sum up to j = J (L
It is preferable that ₁ T ₁ + L ₂ T ₂ +... + L _J T _J ) be equal to the product of L and T (LT) (brightness does not change). Furthermore, the _{T j,} the sum of j = 1 through _{j = J (T 1 + T} 2 + ··· + T J) is that is equal to the T (the display period of the original image is maintained) of preferable. Here, that the brightness is unchanged and the display cycle of the original image is maintained is referred to as a sub-image distribution condition.

Among the methods of distributing the brightness of the original image to a plurality of sub-images, the black insertion method is a method of making at least one sub-image a black image. By doing this, the display method can be simulated in an impulse type, so that it is possible to prevent the deterioration of the quality of the moving image due to the display method being a hold type. Here, in order to prevent the decrease in brightness of the display image accompanying the insertion of the black image, it is preferable to follow the sub-image distribution conditions. However, in the case where the decrease in the brightness of the display image is acceptable (such as when the surroundings are dark), the sub-image is set if the user is set such that the decrease in the brightness of the display image is acceptable. It is not necessary to follow the distribution conditions. For example, one sub-image may be the same as the original image, and the other sub-image may be a black image. In this case, power consumption can be reduced compared to when the sub image distribution condition is followed. Furthermore, in the liquid crystal display device, when it is assumed that one of the sub-images has the overall brightness of the original image increased without limiting the maximum value of the brightness, the brightness of the backlight should be increased. Sub-image distribution conditions may be realized. In this case, since the sub image distribution condition can be satisfied without controlling the voltage value written to the pixel, the operation of the image processing circuit can be omitted, and power consumption can be reduced.

The black insertion method is characterized in that L _{j of} all pixels is 0 in any one sub-image. By this means, since the display method can be simulated in an impulse type, it is possible to prevent the deterioration of the quality of the moving image due to the display method being a hold type.

Among the methods of distributing the brightness of the original image to a plurality of sub-images, the time division gradation control method divides the brightness of the original image into a plurality of ranges, and when controlling the brightness in the ranges, all The method is performed by only one sub-image among the sub-images of. By doing this, the display method can be pseudo-impulse-type without lowering the brightness, so that it is possible to prevent the deterioration of the quality of the moving image caused by the hold-type display method.

As a method of dividing the brightness of the original image into multiple ranges, the maximum value of brightness (L _max ),
There is a method of dividing by the number of sub-images. This is because, for example, in a display device in which the brightness from 0 to L _max can be adjusted in 256 steps (tone 0 to tone 255), when the number of sub-images is 2, tone 0 to tone 127 To display the brightness of one sub-image in the range of gradation 0 to gradation 255, while setting the brightness of the other sub-image to gradation 0,
When displaying from gray level 128 to gray level 255, the brightness of one sub image is gray level 255
On the other hand, the brightness of the other sub-image is adjusted in the range of gradation 0 to gradation 255. By doing this, the original image can be perceived by the human eye as if it were displayed, and since it can be pseudo-impulse-type, the quality of the moving image is degraded due to being of the hold-type. You can prevent. The number of sub-images may be larger than two. For example, if the number of sub-images is three, the brightness level of the original image (gradation 0 to gradation 2
55) is divided into three. Depending on the number of brightness levels of the original image and the number of sub-images, the number of brightness levels may not be divisible by the number of sub-images, but it is included in the range of each brightness after division The number of stages of brightness may be distributed as appropriate, even if not exactly the same.

Also in the time-division gradation control method, it is preferable to satisfy the sub-image distribution condition, since the same image as the original image can be displayed without a decrease in brightness and the like.

Among the methods of distributing the brightness of the original image to a plurality of sub-images, the gamma complement method makes one sub-image a bright image with the gamma characteristics of the original image changed and the other sub-image the gamma of the original image. It is a method to make it a dark image whose characteristics are changed. By doing this, the display method can be pseudo-impulse-type without lowering the brightness, so that it is possible to prevent the deterioration of the quality of the moving image caused by the hold-type display method. Here, the gamma characteristic is the degree of brightness with respect to the brightness level (gradation). Usually, the gamma characteristic is adjusted to be close to linear. This is because if the change in brightness is proportional to the gray level, which is the level of brightness, a smooth gray level can be obtained. In the gamma complement method, the gamma characteristics of one sub-image are shifted from linear and adjusted to be brighter than linear in the middle brightness (halftone) region (halftone becomes an image brighter than the original) )
. Then, the gamma characteristics of the other sub-image are also deviated from linear, and adjusted so as to be darker than linear in the same half tone region (half tone becomes an image darker than originally). Here, the amount by which one sub-image is brighter than linear and the amount by which the other sub-image is darker than linear
It is preferable to make them approximately equal in all gradations. In this way, the original image can be perceived by the human eye as if it were displayed, and degradation of the quality of the moving image due to being of the hold type can be prevented. The number of sub-images may be larger than two. For example, if the number of sub-images is three, then the gamma characteristics are adjusted for each of the three sub-images so that the sum of the linear to brightening amount and the sum of the linear to darkening amount are approximately equal. Good.

Also in the gamma complement method, it is preferable to satisfy the sub-image distribution condition because the same image as the original image can be displayed without a decrease in brightness or the like. further,
In the gamma complement method, the change in the brightness L _j of each sub-image with respect to the gradation follows the gamma curve, so that each sub-image can display the gradation smoothly by itself.
It has the advantage of also improving the quality of the image perceived by the human eye in the end.

A method of using an intermediate image determined by motion compensation as a sub image is a method of setting one sub image as an intermediate image determined by motion compensation from preceding and succeeding images. By doing this, the motion of the image can be smoothed, so the quality of the moving image can be improved.

Next, the relationship between the timing of displaying the sub image and the method of creating the sub image will be described. The timing for displaying the first sub-image is the same as the timing for displaying the original image determined in the first step, and the timing for displaying the second sub-image is the source determined in the first step Although it can be determined arbitrarily regardless of the timing of displaying the image, the sub-image itself may be changed according to the timing of displaying the second sub-image. By doing this, even if the timing of displaying the second sub-image is variously changed, it can be perceived by the human eye as if the original image was displayed. Specifically, when the timing for displaying the second sub-image is advanced, the first sub-image is made brighter, and the second
Sub-images can be darker. Furthermore, if the timing to display the second sub-image is delayed, the first sub-image can be darker and the second sub-image can be brighter. This is because the brightness perceived by the human eye changes depending on the length of the period in which the image is displayed. More specifically, the brightness perceived by human eyes is brighter as the image display period is longer, and is darker as the image display period is shorter. That is, by shortening the timing of displaying the second sub image, the length of the period in which the first sub image is displayed is shortened, and the length of the period in which the second sub image is displayed is increased. As it is, the first sub-image is dark and the second sub-image is bright and perceived by human eyes. As a result, an image different from the original image will be perceived by the human eye.
The second sub-image can be made brighter and the second sub-image can be made darker. Similarly, the second
By delaying the timing of displaying the second sub-image, the length of the period of displaying the first sub-image becomes longer, and the length of the period of displaying the second sub-image becomes shorter. The sub-image may be darker and the second sub-image may be brighter.

Based on the above description, the processing procedure in the second step is shown below.
As procedure 1, a method of creating a plurality of sub-images from one original image is determined. More specifically, a method of creating a plurality of sub-images is a method of using the original image as it is as a sub-image, a method of distributing the brightness of the original image to a plurality of sub-images, an intermediate image obtained by motion compensation It can be selected from the methods used as
In step 2, the number J of sub-images is determined. Here, J is an integer of 2 or more.
In step 3, the brightness L _j of the pixel in the j-th sub-image and the length T _{j of the} period in which the j-th sub-image is displayed are determined according to the method selected in step 1. In procedure 3, the length of the period in which each sub-image is displayed and the brightness of each pixel included in each sub-image are specifically determined.
In step 4, the original image is processed and actually displayed according to the items determined in each of steps 1 to 3.
In step 5, move the target original image to the next original image. Then, return to step 1.

The mechanism for executing the procedure in the second step may be implemented in the device or may be determined in advance at the design stage of the device. If a mechanism for executing the procedure in the second step is implemented in the device, it is possible to switch the driving method so that the optimum operation according to the situation is performed. Note that the conditions mentioned here are the contents of the image data, the environment inside and outside the device (temperature, humidity, pressure, light, sound, magnetic field, electric field, radiation dose,
Includes altitude, acceleration, travel speed, etc., user settings, software versions, etc. On the other hand, if the mechanism for executing the procedure in the second step is determined in advance at the design stage of the apparatus, the drive circuit optimum for each drive method can be used, and the mechanism is determined. Thus, it is possible to expect a reduction in manufacturing cost due to mass production effects.

Next, various driving methods determined by the procedure in the second step will be described in detail by specifically showing the values of n and m in the first step.

When the method of using the original image as it is as the sub image is selected in procedure 1 in the second step, the driving method is as follows.

I-th (i is a positive integer) image data,
The (i + 1) th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub image display periods,
The i-th image data is data that can make the plurality of pixels have unique brightness L, respectively.
The j-th (j is an integer of 1 or more and J or less) sub-image is configured by juxtaposing a plurality of pixels each having unique brightness L _j, and is displayed only during the j-th sub-image display period T _j It is an image,
A method of driving a display device satisfying a sub image distribution condition, wherein L, T, L _j and T _j satisfy the sub image distribution condition,
In all j, the brightness L _j of each pixel included in the j-th sub-image is characterized by L _j = L for each pixel.
Here, the original image data created in the first step can be used as the image data sequentially prepared in a fixed cycle T. That is, all the display patterns mentioned in the description of the first step can be combined with the above driving method.

When the number J of sub-images is determined to be 2 in procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in procedure 3, the above-mentioned driving method is shown in FIG. 69. It will be like.
In FIG. 69, the horizontal axis represents time, and the vertical axis represents the cases of the various n and m used in the first step.

For example, in the first step, when n = 1, m = 1, that is, when the conversion ratio (n / m) is 1, the driving method as shown at n = 1, m = 1 in FIG. Become. At this time, the display frame rate is twice the frame rate of the input image data (double speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (driven at 120 Hz). Then, an image is displayed twice continuously for one input image data. Here, in the case of double-speed driving, the quality of moving pictures can be improved more than in the case where the frame rate is smaller than double speed, and power consumption and manufacturing cost can be reduced as compared with the case where the frame rate is larger than double speed. Furthermore, in step 1 of the second step,
By selecting a method that uses the original image as it is as a sub-image, the operation of the circuit that creates the intermediate image can be stopped by motion compensation or the circuit itself can be omitted from the device, so power consumption and device manufacturing cost Can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 120 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 120 Hz, the frequency of AC drive is an integral multiple or an integer fraction of that (for example, 30 Hz, 60 Hz)
, 120 Hz, 240 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to such an extent that it can not be perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately half of the cycle of the input image data.

Furthermore, for example, in the first step, n = 2, m = 1, ie, the conversion ratio (n / m)
When 2) is 2, the driving method is as shown at n = 2 and m = 1 in FIG. At this time, the display frame rate is four times the frame rate of the input image data (quadruple speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, an image is displayed four times consecutively for one input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of quadruple speed drive, the quality of moving pictures can be improved more than in the case where the frame rate is smaller than quadruple speed, and power consumption and manufacturing cost can be reduced as compared with the case where it is larger than quadruple speed. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of write voltage shortage due to the dynamic capacitance can be avoided, the image quality improvement effect is particularly remarkable for failures such as tailing of moving images and afterimages. Furthermore, it is also effective to combine the AC drive and the 240 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 240 Hz and setting the frequency of AC drive to an integral multiple or an integral fraction of it (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄4 of the cycle of the input image data.

Furthermore, for example, in the first step, n = 3, m = 1, ie, the conversion ratio (n / m)
When d) is 3, the driving method is as shown at n = 3 and m = 1 in FIG. At this time, the display frame rate is six times the frame rate of the input image data (6-fold speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 360 Hz (360 Hz drive). Then, an image is continuously displayed six times for one input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 6 × speed driving, the quality of moving pictures can be improved as compared with the case where the frame rate is smaller than 6 × speed, and power consumption and manufacturing cost can be reduced as compared with the case where the frame rate is larger than 6 × speed. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of write voltage shortage due to the dynamic capacitance can be avoided, the image quality improvement effect is particularly remarkable for failures such as tailing of moving images and afterimages. Furthermore, it is also effective to combine the AC drive and the 360 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 360 Hz and setting the frequency of AC drive to an integral multiple or an integral fraction of it (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄6 of the cycle of the input image data.

Furthermore, for example, in the first step, n = 3, m = 2, ie, the conversion ratio (n / m)
When 3) is 3/2, the driving method is as shown at n = 3 and m = 2 in FIG.
At this time, the display frame rate is three times (three times faster) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, an image is displayed three times consecutively for one input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Where 3
In the case of double speed driving, the quality of moving pictures can be improved as compared with the case where the frame rate is smaller than triple speed, and power consumption and manufacturing cost can be reduced as compared with the case where the frame rate is larger than triple speed. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 180 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 180 Hz and setting the frequency of AC drive to an integral multiple or an integral fraction of it (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1⁄3 of the cycle of the input image data.

Furthermore, for example, in the first step, n = 4, m = 1, ie, the conversion ratio (n / m)
When d) is 4, the driving method is as shown at n = 4 and m = 1 in FIG. At this time, the display frame rate is eight times (eight-fold speed drive) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 480 Hz (driven at 480 Hz). Then, an image is continuously displayed eight times for one input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 8 × speed driving, the quality of moving pictures can be improved as compared with the case where the frame rate is smaller than 8 × speed, and power consumption and manufacturing cost can be reduced as compared with the case where the frame rate is larger than 8 × speed. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of write voltage shortage due to the dynamic capacitance can be avoided, the image quality improvement effect is particularly remarkable for failures such as tailing of moving images and afterimages. Furthermore, it is also effective to combine the AC drive and 480 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 480 Hz and setting the frequency of the AC drive to an integral multiple or an integer fraction (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄8 of the cycle of input image data.

Furthermore, for example, in the first step, n = 4, m = 3, ie, the conversion ratio (n / m)
When 4) is 4/3, the driving method is as shown at n = 4 and m = 3 in FIG.
At this time, the display frame rate is 8/3 times the frame rate of the input image data (8
/ 3x speed drive). Specifically, for example, when the input frame rate is 60 Hz, the display frame rate is 160 Hz (160 Hz drive). Then, images are continuously displayed eight times for three input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 8 / 3-speed driving, the quality of moving pictures can be improved more than in the case where the frame rate is smaller than 8 / 3-speed, and power consumption and manufacturing cost can be reduced as compared with the case of larger than 8 / 3-speed. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage.
Furthermore, it is also effective to combine the AC drive and the 160 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 160 Hz and setting the frequency of AC drive to an integral multiple or an integral fraction (for example, 40 Hz, 80 Hz, 160 Hz, 320 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 3⁄8 of the cycle of the input image data.

Furthermore, for example, in the first step, n = 5, m = 1, ie, the conversion ratio (n / m
When the value of 5) is 5, the driving method is as shown at n = 5 and m = 1 in FIG. At this time, the display frame rate is 10 times (10 × speed drive) the frame rate of the input image data. Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 600 Hz (600 Hz drive). Then, an image is continuously displayed ten times for one input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. here,
In the case of 10-fold speed drive, the quality of moving pictures can be improved more than in the case where the frame rate is smaller than 10-fold speed, and power consumption and manufacturing cost can be reduced as compared with the case of greater than 10-fold speed. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 600 Hz drive of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 600 Hz and setting the frequency of AC drive to an integral multiple or an integral fraction (for example, 30 Hz, 60 Hz, 100 Hz, 120 Hz, etc.) It can be reduced to an extent that is not perceived by human eyes. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1/10 of the cycle of input image data.

Furthermore, for example, in the first step, n = 5, m = 2, ie, the conversion ratio (n / m
When 5) is 5/2, the drive method is as shown at n = 5 and m = 2 in FIG.
At this time, the display frame rate is five times the frame rate of the input image data (five-fold speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, an image is continuously displayed five times for one input image data. At this time, when the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Here, in the case of 5 × speed driving, the quality of moving pictures can be improved more than in the case where the frame rate is smaller than 5 × speed, and power consumption and manufacturing cost can be reduced as compared with the case of larger than 5 × speed. Furthermore, the second
In step 1 of the above step, the method of using the original image as a sub-image as it is is selected, so that the operation of the circuit for creating the intermediate image can be stopped by motion compensation or the circuit itself can be omitted from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is also effective to combine the AC drive and the 300 Hz drive of the liquid crystal display device. That is, while setting the driving frequency of the liquid crystal display device to 300 Hz, the frequency of alternating current driving is an integral multiple or an integer fraction
For example, by setting the frequency to 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to such an extent that human eyes do not perceive it. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately 1⁄5 of the period of the input image data.

Thus, in procedure 1 in the second step, the method of using the original image as it is as the sub image is selected,
In procedure 2 in the second step, the number of sub-images is determined to be 2,
If it is determined in step 3 in the second step that T1 = T2 = T / 2, then the first
Since the display frame rate can be further doubled with respect to the frame rate conversion of the conversion ratio determined by the values of n and m in the above step, the quality of moving pictures can be further improved. Furthermore, the quality of moving pictures can be improved as compared to the case where the display frame rate is smaller than the display frame rate, and power consumption and manufacturing cost can be reduced as compared to the case where the display frame rate is larger than the display frame rate.
Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. further,
By increasing the drive frequency of the liquid crystal display device and setting the frequency of AC drive to an integral multiple or an integral fraction of that frequency, it is possible to reduce flicker that appears due to AC drive to such an extent that human eyes do not perceive it. Furthermore, the response time of the liquid crystal element of the period of the input image data
The image quality can be improved by applying to a liquid crystal display device which is approximately 1 / (twice of a conversion ratio)).

Although the detailed description has been omitted, it is apparent that similar advantages can be obtained in cases other than the conversion ratios mentioned above. For example, in the range where n is 10 or less, in addition to those listed above,
n = 5, m = 3, that is, conversion ratio (n / m) = 5/3 (10/3 speed drive, 200 Hz)
,
n = 5, m = 4, that is, conversion ratio (n / m) = 5/4 (5 / 2-speed drive, 150 Hz),
n = 6, m = 1, that is, conversion ratio (n / m) = 6 (12 × drive, 720 Hz),
n = 6, m = 5, that is, conversion ratio (n / m) = 6/5 (12/5 double speed drive, 144 Hz)
,
n = 7, m = 1, that is, conversion ratio (n / m) = 7 (14 × drive, 840 Hz),
n = 7, m = 2, that is, conversion ratio (n / m) = 7/2 (7 × speed drive, 420 Hz),
n = 7, m = 3, that is, conversion ratio (n / m) = 7/3 (14/3 double speed drive, 280 Hz)
,
n = 7, m = 4, that is, conversion ratio (n / m) = 7/4 (7 / 2-speed drive, 210 Hz),
n = 7, m = 5, that is, conversion ratio (n / m) = 7/5 (14/5 double speed drive, 168 Hz)
,
n = 7, m = 6, that is, conversion ratio (n / m) = 7/6 (7/3 speed drive, 140 Hz),
n = 8, m = 1, that is, conversion ratio (n / m) = 8 (16 × driving, 960 Hz),
n = 8, m = 3, that is, conversion ratio (n / m) = 8/3 (16/3 speed drive, 320 Hz)
,
n = 8, m = 5, that is, conversion ratio (n / m) = 8/5 (16/5 speed drive, 192 Hz)
,
n = 8, m = 7, that is, conversion ratio (n / m) = 8/7 (16/7 double speed drive, 137 Hz)
,
n = 9, m = 1, that is, conversion ratio (n / m) = 9 (18 × drive, 1080 Hz),
n = 9, m = 2, that is, conversion ratio (n / m) = 9/2 (9 × driving, 540 Hz),
n = 9, m = 4, that is, conversion ratio (n / m) = 9/4 (9 / 2-speed drive, 270 Hz),
n = 9, m = 5, that is, conversion ratio (n / m) = 9/5 (18/5 speed drive, 216 Hz)
,
n = 9, m = 7, that is, conversion ratio (n / m) = 9/7 (18/7 double speed drive, 154 Hz)
,
n = 9, m = 8, that is, conversion ratio (n / m) = 9/8 (9/4 speed drive, 135 Hz),
n = 10, m = 1, that is, conversion ratio (n / m) = 10 (20 × drive, 1200 Hz),
n = 10, m = 3, that is, conversion ratio (n / m) = 10/3 (20 / 3-speed driving, 400 H
z),
n = 10, m = 7, that is, conversion ratio (n / m) = 10/7 (20/7 double speed drive, 171 H
z),
n = 10, m = 9, that is, conversion ratio (n / m) = 10/9 (20/9 double speed drive, 133 H
z),
Combinations of the above are conceivable. Note that the notation of frequency is an example when the input frame rate is 60 Hz, and for other input frame rates, a value obtained by integrating two times each conversion ratio with the input frame rate is the drive frequency.

In the case where n is an integer greater than 10, it is obvious that the procedure in the second step can be applied to various n and m, although specific numbers of n and m are not listed. .

When J = 2, it is particularly effective if the conversion ratio in the first step is larger than 2. This is because, in the second step, if the number of sub-images is relatively reduced to J = 2, the conversion ratio in the first step can be increased accordingly. Such conversion ratios are 3, 4, 5, 5/2, 6, 7 in the range where n is 10 or less.
, 7/2, 7/3, 8, 8/3, 9, 9/2, 9/4, 10, 10/3, and the like.
When the display frame rate after the first step is such a value, the advantage of reducing the number of sub-images in the second step by setting J = 3 or more (such as reduction of power consumption and manufacturing cost) In addition, it is possible to make the advantages of the large final display frame rate (improvement of moving picture quality, reduction of flicker, etc.) compatible with each other.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where it is determined that T ₂ = T / 2 has been described, it is apparent that the present invention is not limited to this.

For example, if it is determined in step 3 in the second step that T ₁ <T ₂ , it is possible to make the first sub-image brighter and the second sub-image darker. Furthermore, the second
If it is determined in step 3 that T ₁ > T ₂ , the first sub-image can be darker and the second sub-image can be brighter. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved. However, when the method of using the original image as it is as the sub image is selected in the procedure 1 as in the above-described driving method, the brightness of the sub image may be displayed as it is without being changed. This is because, in this case, since the image used as the sub image is the same, the original image can be properly displayed regardless of the display timing of the sub image.

Furthermore, it is obvious that in the procedure 2, the number J of sub-images may be determined not to 2 but to any other value. In this case, as compared with the frame rate conversion of the conversion ratio determined by the values of n and m in the first step, the display frame rate can be further increased to a J-fold frame rate, thereby further improving the moving picture quality. Is possible. Furthermore, the quality of moving pictures can be improved as compared to the case where the display frame rate is smaller than the display frame rate, and power consumption and manufacturing cost can be reduced as compared to the case where the display frame rate is larger than the display frame rate. Furthermore, in the procedure 1 of the second step, the method of using the original image as it is as a sub-image is selected to stop the operation of the circuit that creates the intermediate image by motion compensation or omit the circuit itself from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, by increasing the drive frequency of the liquid crystal display device and setting the frequency of AC drive to an integral multiple or integral fraction thereof, the flicker appearing by the AC drive can be reduced to such an extent that it can not be perceived by human eyes. it can. Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1 / (J times the conversion ratio)) of the cycle of the input image data.

For example, when J = 3, the quality of moving pictures can be improved more than when the number of sub-images is less than 3, and power consumption and manufacturing cost can be reduced more than when the number of sub-images is greater than 3 Have an advantage. Furthermore, the response time of the liquid crystal element of the input image data period (1
The image quality can be improved by applying to a liquid crystal display device which is approximately / (3 times the conversion ratio)).

Furthermore, for example, when J = 4, the quality of moving pictures can be improved more than when the number of sub-images is smaller than 4, and the power consumption and manufacturing cost can be reduced more than when the number of sub-images is larger than 4 It has the advantage of being able to Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1 / (4 times the conversion ratio)) of the cycle of the input image data.

Furthermore, for example, when J = 5, the quality of moving pictures can be improved more than when the number of sub-images is less than 5, and power consumption and manufacturing cost can be reduced more than when the number of sub-images is greater than 5 It has the advantage of being able to Furthermore, image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1 / (5 times the conversion ratio)) of the cycle of the input image data.

Furthermore, even if J is other than those listed above, it has similar advantages.

When J = 3 or more, the conversion ratio in the first step can take various values, but in particular, when the conversion ratio in the first step is relatively small (2 or less), J = 3
It is effective to set it as above. This is because if the display frame rate after the first step is relatively small, J can be increased in the second step accordingly. Such conversion ratios are 1, 2, 3/2, 4/3, and so on in the range where n is 10 or less.
5/3, 5/4, 6/5, 7/4, 7/5, 7/6, 8/7, 9/5, 9/7, 9/8,
10/7 and 10/9. Among them, the conversion ratio is 1, 2, 3/2, 4/3, 5 /
The cases of 3 and 5/4 are illustrated in FIG. As described above, when the display frame rate after the first step is a relatively small value, the advantage of the small display frame rate in the first step can be obtained by setting J to 3 or more (power consumption and manufacturing cost). It is possible to simultaneously achieve the advantages (reduction of moving image, reduction of flicker, etc.) due to the reduction of the display frame rate and the large final display frame rate.

Next, another example of the driving method determined by the procedure in the second step will be described.

In the procedure 1 in the second step, when the black insertion method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images, the driving method is as follows.

I-th (i is a positive integer) image data,
The (i + 1) th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub image display periods,
The i-th image data is data that can make the plurality of pixels have unique brightness L, respectively.
The j-th (j is an integer of 1 or more and J or less) sub-image is configured by juxtaposing a plurality of pixels each having unique brightness L _j, and is displayed only during the j-th sub-image display period T _j It is an image,
A method of driving a display device satisfying a sub image distribution condition, wherein L, T, L _j and T _j satisfy the sub image distribution condition,
In at least one j, the brightness L _{j of} all the pixels contained in the j-th sub-image is L _j
It is characterized in that = 0.
Here, the original image data created in the first step can be used as the image data sequentially prepared in a fixed cycle T. That is, all the display patterns mentioned in the description of the first step can be combined with the above driving method.

It is apparent that the above driving method can be implemented in combination for each of the various n and m used in the first step.

When the number J of sub-images is determined to be 2 in procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in procedure 3, the above-mentioned driving method is shown in FIG. 69. It will be like.
The features and advantages of the driving method (display timing at various n and m) shown in FIG. 69 have already been described, so detailed description is omitted here, but in step 1 of the second step, the brightness of the original image It is apparent that the same method is obtained even when the black insertion method is selected among the methods of distributing the image into a plurality of sub-images. For example, in the case where the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is large, the quality of moving pictures can be improved, and when the display frame rate is small, power consumption and manufacturing cost can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is possible to reduce flicker that appears due to AC drive to an extent that is not perceived by the human eye

Among the methods of distributing the brightness of the original image to a plurality of sub-images in procedure 1 of the second step, a characteristic advantage of the black insertion method being selected is that an intermediate image is created by motion compensation. The operation of the circuit can be stopped or the circuit itself can be omitted from the device.
Power consumption and device manufacturing costs can be reduced. Further, since the display method of the impulse type can be simulated in a pseudo manner regardless of the gradation value included in the image data, the quality of the moving image can be improved.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where it is determined that T ₂ = T / 2 has been described, it is apparent that the present invention is not limited to this.

For example, if it is determined in step 3 in the second step that T ₁ <T ₂ , it is possible to make the first sub-image brighter and the second sub-image darker. Furthermore, the second
If it is determined in step 3 that T ₁ > T ₂ , the first sub-image can be darker and the second sub-image can be brighter. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved. However, as in the driving method described above, when the black insertion method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images in step 1, the brightness of the sub-image is not changed It may be displayed as it is. because,
In this case, when the brightness of the sub-image is not changed, the entire brightness of the original image is only displayed dark. That is, by actively using this method for controlling the brightness of the display device, it is possible to control the brightness while improving the quality of the moving image.

Furthermore, it is obvious that in the procedure 2, the number J of sub-images may be determined not to 2 but to any other value. Since the advantage in that case has already been described, the detailed description is omitted here, but in the procedure 1 in the second step, the black insertion method is one of the methods of distributing the brightness of the original image to a plurality of sub-images. It is clear that the selected advantages have similar advantages. For example, the response time of the liquid crystal element is 1 / (J times the conversion ratio) of the cycle of the input image data.
The image quality can be improved by applying to a liquid crystal display device which is about double.

Next, another example of the driving method determined by the procedure in the second step will be described.

In the procedure 1 in the second step, when the time division gradation control method is selected among the methods of distributing the brightness of the original image to a plurality of sub images, the driving method is as follows.

I-th (i is a positive integer) image data,
The (i + 1) th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub image display periods,
The i-th image data is data that can make the plurality of pixels have unique brightness L, respectively.
The specific brightness L has a maximum value of L _max ,
The j-th (j is an integer of 1 or more and J or less) sub-image is configured by juxtaposing a plurality of pixels each having unique brightness L _j, and is displayed only during the j-th sub-image display period T _j It is an image,
A method of driving a display device satisfying a sub image distribution condition, wherein L, T, L _j and T _j satisfy the sub image distribution condition,
In order to display the unique brightness L, (j-1) × L _max / J to J × L _max
The adjustment of the brightness in the range of the brightness of / J is performed by the adjustment of the brightness in only one sub-image display period among the J sub-image display periods.
Here, the original image data created in the first step can be used as the image data sequentially prepared in a fixed cycle T. That is, all the display patterns mentioned in the description of the first step can be combined with the above driving method.

It is apparent that the above driving method can be implemented in combination for each of the various n and m used in the first step.

When the number J of sub-images is determined to be 2 in procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in procedure 3, the above-mentioned driving method is shown in FIG. 69. It will be like.
The features and advantages of the driving method (display timing at various n and m) shown in FIG. 69 have already been described, so detailed description is omitted here, but in step 1 of the second step, the brightness of the original image It is apparent that the same advantages can be obtained even in the case where the time division tone control method is selected among the methods of distributing H.sub.2 to a plurality of sub-images. For example, in the case where the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is large, the quality of moving pictures can be improved, and when the display frame rate is small, power consumption and manufacturing cost can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is possible to reduce flicker that appears due to AC drive to an extent that is not perceived by the human eye

Among the methods of distributing the brightness of the original image to a plurality of sub-images in the procedure 1 of the second step, a characteristic advantage of selecting the time-division gradation control method is that an intermediate image is obtained by motion compensation. It is possible to reduce the power consumption and the manufacturing cost of the device, since the operation of the circuit that creates the can be stopped or the circuit itself can be omitted from the device. further,
Since the display method of the impulse type can be simulated, the quality of the moving image can be improved, and the brightness of the display device does not decrease, thereby further reducing power consumption.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where it is determined that T ₂ = T / 2 has been described, it is apparent that the present invention is not limited to this.

For example, if it is determined in step 3 in the second step that T ₁ <T ₂ , it is possible to make the first sub-image brighter and the second sub-image darker. Furthermore, the second
If it is determined in step 3 that T ₁ > T ₂ , the first sub-image can be darker and the second sub-image can be brighter. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved.

Furthermore, it is obvious that in the procedure 2, the number J of sub-images may be determined not to 2 but to any other value. Since the advantage in that case has already been described, detailed explanation will be omitted here, but in the procedure 1 in the second step, time-division gradation among the methods of distributing the brightness of the original image to a plurality of sub-images It is clear that the same advantages are obtained when the control method is chosen. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1 / (J times the conversion ratio)) of the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described.

Among the methods of distributing the brightness of the original image to a plurality of sub-images in procedure 1 in the second step, when the gamma complement method is selected, the driving method is as follows.

I-th (i is a positive integer) image data,
The (i + 1) th image data are sequentially prepared at a constant period T,
The period T is divided into J (J is an integer of 2 or more) sub image display periods,
The i-th image data is data that can make the plurality of pixels have unique brightness L, respectively.
The j-th (j is an integer of 1 or more and J or less) sub-image is configured by juxtaposing a plurality of pixels each having unique brightness L _j, and is displayed only during the j-th sub-image display period T _j It is an image,
A method of driving a display device satisfying a sub image distribution condition, wherein L, T, L _j and T _j satisfy the sub image distribution condition,
In each sub-image, the characteristic of the change in brightness with respect to gradation is shifted from linear, and the sum of the amount of brightness shifted from linear to bright and the sum of the amount of brightness shifted from linear to dark , Substantially equal in all gradations.
Here, the original image data created in the first step can be used as the image data sequentially prepared in a fixed cycle T. That is, all the display patterns mentioned in the description of the first step can be combined with the above driving method.

It is apparent that the above driving method can be implemented in combination for each of the various n and m used in the first step.

When the number J of sub-images is determined to be 2 in procedure 2 in the second step and T ₁ = T ₂ = T / 2 is determined in procedure 3, the above-mentioned driving method is shown in FIG. 69. It will be like.
The features and advantages of the driving method (display timing at various n and m) shown in FIG. 69 have already been described, so detailed description is omitted here, but in step 1 of the second step, the brightness of the original image It is apparent that among the methods of distributing H.sub.i.sup.2 to a plurality of sub-images, similar advantages are obtained even when the gamma complementation method is selected. For example, in the case where the interpolation image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is large, the quality of moving pictures can be improved, and when the display frame rate is small, power consumption and manufacturing cost can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device, the problem of the shortage of the write voltage due to the dynamic capacitance can be avoided, so that the image quality improvement effect is particularly remarkable with respect to a failure such as tailing of a moving image or an afterimage. Furthermore, it is possible to reduce flicker that appears due to AC drive to an extent that is not perceived by the human eye

Among the methods of distributing the brightness of the original image to a plurality of sub-images in the procedure 1 of the second step, a characteristic advantage of the gamma complementation method being selected is that an intermediate image is created by motion compensation. Power consumption and manufacturing costs of the device can be reduced because the operation of the circuit can be stopped or the circuit itself can be omitted from the device. Further, since the display method of the impulse type can be simulated in a pseudo manner regardless of the gradation value included in the image data, the quality of the moving image can be improved. Further, the sub-image may be obtained by direct gamma conversion of the image data. In this case, there is an advantage that the gamma value can be controlled variously depending on the size of the motion of the moving image and the like. Furthermore, the image data may not be directly gamma converted, and a sub-image in which the gamma value is changed may be obtained by changing the reference voltage of the digital analog conversion circuit (DAC). In this case, since the image data is not directly gamma converted, the circuit that performs gamma conversion can be stopped or the circuit itself can be omitted from the device, so power consumption and device manufacturing cost can be reduced. . Furthermore, in the gamma complement method, the change in the brightness L _j of each sub-image with respect to the gradation follows the gamma curve, so that each sub-image can display the gradation smoothly on its own, and finally the human being It has the advantage of also improving the quality of the image perceived by the human eye.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where it is determined that T ₂ = T / 2 has been described, it is apparent that the present invention is not limited to this.

For example, if it is determined in step 3 in the second step that T ₁ <T ₂ , it is possible to make the first sub-image brighter and the second sub-image darker. Furthermore, the second
If it is determined in step 3 that T ₁ > T ₂ , the first sub-image can be darker and the second sub-image can be brighter. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved. As in the above driving method, the procedure 1
In the method of distributing the brightness of the original image to a plurality of sub-images, if the gamma method is selected, the gamma value may be changed when the brightness of the sub-image is changed. That is, the gamma value may be determined according to the display timing of the second sub-image. In this way, the circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the device, so power consumption and device manufacturing cost can be reduced.

Furthermore, it is obvious that in the procedure 2, the number J of sub-images may be determined not to 2 but to any other value. Since the advantage in that case has already been described, detailed explanation will be omitted here, but in the procedure 1 in the second step, time-division gradation among the methods of distributing the brightness of the original image to a plurality of sub-images It is clear that the same advantages are obtained when the control method is chosen. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1 / (J times the conversion ratio)) of the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described in detail.

In procedure 1 in the second step, a method is selected in which an intermediate image obtained by motion compensation is used as a sub image,
In procedure 2 in the second step, the number of sub-images is determined to be 2,
When it is determined in step 3 in the second step that T1 = T2 = T / 2, the second
The driving method determined by the procedure in the step is as follows.

I-th (i is a positive integer) image data,
The (i + 1) th image data are sequentially prepared at a constant period T,
The kth (k is a positive integer) image,
The kth +1 image,
A method of driving a display device, which sequentially displays the (k + 2) th image at an interval of 1/2 times the period of the original image data,
The k-th image is displayed according to the i-th image data,
The (k + 1) -th image is displayed according to image data corresponding to a motion obtained by halving the motion from the i-th image data to the (i + 1) -th image data.
The (k + 2) -th image is displayed according to the (i + 1) -th image data.
Here, the original image data created in the first step can be used as the image data sequentially prepared in a fixed cycle T. That is, all the display patterns mentioned in the description of the first step can be combined with the above driving method.

It is apparent that the above driving method can be implemented in combination for each of the various n and m used in the first step.

A characteristic advantage of the method of using an intermediate image determined by motion compensation as a sub-image in procedure 1 in the second step is that the intermediate image determined by motion compensation in the procedure of the first step is When making it an interpolation image, the method of calculating | requiring the intermediate image used in the 1st step is a point which can be used by the 2nd step as it is. That is, since the circuit for obtaining an intermediate image by motion compensation can be used not only in the first step but also in the second step, the circuit can be effectively used and processing efficiency can be improved. In addition, since the motion of the image can be further smoothed, the quality of the moving image can be further improved.

Here, in step 2, the number J of sub-images is determined to be 2, and in step 3, T ₁ =
Although the case where it is determined that T ₂ = T / 2 has been described, it is apparent that the present invention is not limited to this.

For example, if it is determined in step 3 in the second step that T ₁ <T ₂ , it is possible to make the first sub-image brighter and the second sub-image darker. Furthermore, the second
If it is determined in step 3 that T ₁ > T ₂ , the first sub-image can be darker and the second sub-image can be brighter. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved. In this way, the original image can be perceived properly by the human eye, and the display can be artificially driven by impulse, so that the quality of the moving image can be improved. As in the above drive method, in step 2,
When a method of using an intermediate image determined by motion compensation as a sub image is selected, the brightness of the sub image may not be changed. This is because, since the image in the intermediate state is completed as an image by itself, even if the display timing of the second sub-image changes, it does not change as an image perceived by human eyes. In this case, the circuit for changing the brightness of the entire image can be stopped or the circuit itself can be omitted from the device, so that the power consumption and the manufacturing cost of the device can be reduced.

Furthermore, it is obvious that in the procedure 2, the number J of sub-images may be determined not to 2 but to any other value. Since the advantage in that case has already been described, the detailed description is omitted here, but the same applies to the case where the method of using the intermediate image obtained by motion compensation as the sub image is selected in procedure 1 in the second step. It is obvious to have the following advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1 / (J times the conversion ratio)) of the cycle of the input image data.

Next, with reference to FIG. 71, a specific example of the frame rate conversion method in the case where the input frame rate and the display frame rate are different will be described. In the method shown in FIGS. 71A to 71C, it is assumed that the circular area on the image is an area where the position changes according to the frame, and the triangular area on the image is an area where the position hardly changes according to the frame. There is. However,
This is an example for explanation, and the displayed image is not limited to this. The methods of FIGS. 71 (A)-(C) can be applied to various images.

FIG. 71A shows the case where the display frame rate is twice the input frame rate (the conversion ratio is 2). When the conversion ratio is 2, it has the advantage that the quality of moving pictures can be improved more than when the conversion ratio is smaller than 2. Furthermore, when the conversion ratio is 2, it has the advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is larger than 2. Figure 71 (
A) schematically represents the state of temporal change of the displayed image, with the horizontal axis as time. Here, the image of interest is described as a p-th image (p is a positive integer). Then, an image to be displayed next to the image of interest is a (p + 1) th image,
For convenience, it is described how far away from the image of interest the image displayed before the image of interest is displayed, such as the (p-1) image. To be. The image 180701 is the p-th image, the image 180702 is the (p + 1) th image, the image 180703 is the (p + 2) th image, the image 180704 is the (p + 3) th image, the image 1
It is assumed that 80705 is the (p + 4) th image. The period Tin represents the period of input image data. Note that FIG. 71A shows the case where the conversion ratio is 2; therefore, the period Tin
Is twice as long as the period from the display of the p-th image to the display of the (p + 1) -th image.

Here, the (p + 1) th image 180702 is the pth image 180701 to the (p + 2) th image.
The image may be an intermediate state of the p-th image 180701 and the (p + 2) -th image 180703 by detecting the amount of change in the image up to the image 180703 of the image. In FIG. 71A, the state of the image in the intermediate state is represented by the area where the position changes according to the frame (circular area) and the area where the position does not substantially change according to the frame (triangular area). That is, the position of the circular area in the (p + 1) -th image 180702 is a middle position between the position in the p-th image 180701 and the position in the (p + 2) -th image 180703. That is, the (p + 1) th image 180702 is obtained by performing motion compensation and interpolating image data. As described above, by performing motion compensation on an object moving on an image and interpolating image data, smooth display can be performed.

Further, the (p + 1) th image 180702 is the same as the pth image 180701 and the (p + 2) th image.
The image 180703 may be an image in which the brightness of the image is controlled according to a certain rule after the image 180703 is created to be in the intermediate state. For example, as shown in FIG. 71A, when the representative luminance of the p-th image 180701 is L and the representative luminance of the (p + 1) th image 180702 is Lc, as shown in FIG. Lc may have a relationship of L> Lc. Desirably,
There may be a relationship of 0.1L <Lc <0.8L. More preferably, 0.2L <L
There may be a relationship of c <0.5L. Or, conversely, there may be a relationship of L <Lc between L and Lc. Desirably, there may be a relation of 0.1Lc <L <0.8Lc.
More desirably, there may be a relation of 0.2Lc <L <0.5Lc. By doing so, since the display can be simulated in an impulse type, it is possible to suppress the afterimage of the eye.

The representative luminance of the image will be described in detail later with reference to FIG.

Thus, two different causes for motion blur (the motion of the image is not smooth,
By solving the image and the afterimage of the eye at the same time, it is possible to significantly reduce the motion blur.

Furthermore, the (p + 2) -th image 180703 is also applied to the (p + 3) -th image 180704.
And the (p + 4) th image 180705 using the same method. That is, the (p + 3) th image 180704 is compared with the (p + 2) th image 180703 to the
The (p + 2) th image 1 is detected by detecting the amount of change in the image up to the image 180705 of +4).
The image may be an intermediate state of the image 80705 and the (p + 4) th image 180705, and may be an image in which the brightness of the image is controlled according to a certain rule.

FIG. 71B shows the case where the display frame rate is three times the input frame rate (the conversion ratio is 3). FIG. 71 (B) schematically shows the state of temporal change of the displayed image, where the horizontal axis is time. The image 180711 is the p-th image, the image 1807
12 is the (p + 1) th image, the image 180713 is the (p + 2) th image, the image 180714
Is the (p + 3) th image, the image 180715 is the (p + 4) th image, the image 180716 is the (p + 5) th image, and the image 180717 is the (p + 6) th image. The period Tin represents the period of input image data. Since FIG. 71B shows the case where the conversion ratio is 3, the period Tin is three times the period until the (p + 1) -th image is displayed after the p-th image is displayed. It will be the length.

Here, the (p + 1) -th image 180712 and the (p + 2) -th image 180713 are detected by detecting the amount of change in the image from the p-th image 180711 to the (p + 3) -th image 180714. And the (p + 3) th image 180714 may be an intermediate state image. In FIG. 71 (B), the state of the image in the intermediate state is represented by the area where the position changes according to the frame (circular area) and the area where the position does not substantially change according to the frame (triangular area). That is, the position of the circular area in the (p + 1) th image 180712 and the (p + 2) th image 180713 is located intermediate between the position in the pth image 180711 and the position in the (p + 3) th image 180714. Specifically, when the amount of movement of the circular area detected from the p-th image 180711 and the (p + 3) -th image 180714 is X, the position of the circular area in the (p + 1) -th image 180712 is It may be a position displaced about (1/3) X from the position in the p-th image 180711. Furthermore, the (p + 2) th image 1807
The position of the circular area at 13 is calculated from the position at the p th image 180
) It may be a position displaced by about X. That is, the (p + 1) th image 180712 and the (p + 2) th image 180713 are obtained by performing motion compensation and interpolating image data. As described above, by performing motion compensation on an object moving on an image and interpolating image data, smooth display can be performed.

Furthermore, the (p + 1) th image 180712 and the (p + 2) th image 180713 are created to be in the intermediate state between the p-th image 180711 and the (p + 3) -th image 180714, and the brightness of the image is constant. It may be an image controlled by the rule of. The constant rule is, for example, as shown in FIG. 71 (B), a representative luminance of the p-th image 180711 is L,
The representative luminance of the image 180712 of p + 1) is Lc1, the (p + 2) th image 180713
When Lc2 represents a representative luminance of L, L> Lc1 or Lc in L, Lc1 and Lc2.
There may be a relationship of> Lc2 or Lc1 = Lc2. Desirably, 0.1L <Lc
There may be a relationship of 1 = Lc2 <0.8L. More preferably, 0.2L <Lc =
There may be a relationship of Lc2 <0.5L. Or conversely, in L, Lc1 and Lc2, there may be a relation of L <Lc1 or L <Lc2 or Lc1 = Lc2. Desirably, there may be a relation of 0.1Lc1 = 0.1Lc2 <L <0.8Lc1 = 0.8Lc2. More preferably, 0.2Lc1 = 0.2Lc2 <L <0.5Lc1 = 0.5
There may be a relationship of Lc2. By doing so, since the display can be simulated in an impulse type, it is possible to suppress the afterimage of the eye. Alternatively, images in which the brightness is changed may be alternately displayed. By doing this, it is possible to shorten the cycle in which the luminance changes, so it is possible to reduce flicker.

Thus, two different causes for motion blur (the motion of the image is not smooth,
By solving the image and the afterimage of the eye at the same time, it is possible to significantly reduce the motion blur.

Furthermore, the (p + 4) th image 180715 and the (p + 5) th image 180716 may also be created using the same method from the (p + 3) th image 180714 and the (p + 6) th image 180717. That is, the (p + 4) th image 180715 and the (p + 5) th image 180716 are detected by detecting the amount of change in the image from the (p + 3) th image 180714 to the (p + 6) th image 180717. Picture 18071 of
The image may be an intermediate state of the 4th and (p + 6) th image 180717, and may be an image in which the brightness of the image is controlled according to a certain rule.

When the method of FIG. 71 (B) is used, the display frame rate is large, so that the movement of the image can follow the movement of the eye well, and the movement of the image can be displayed smoothly. Can be significantly reduced.

71C shows that the display frame rate is 1.5 times the input frame rate (a conversion ratio of 1.5
Represents the case of). FIG. 71C schematically shows how an image displayed changes with time, with the horizontal axis representing time. Image 180721 is the p-th image, image 1
80722 is the (p + 1) th image, image 180723 is the (p + 2) th image, image 180
It is assumed that 724 is the (p + 3) th image. Although the image 180725 may not actually be displayed, the image 180725 is input image data, and the (p + 1) th image 180722 and the (p
A +2) image 180723 may be used to create. The period Tin represents the period of input image data. Since FIG. 71C shows the case where the conversion ratio is 1.5, period Tin is one of the periods from the display of the p-th image to the display of the (p + 1) -th image. .5 times the length.

Here, the (p + 1) -th image 180722 and the (p + 2) -th image 180723 are from the p-th image 180721 to the image (p + 3) 180724 via the image 180725.
It may be an image created so as to be in an intermediate state between the p-th image 180721 and the (p + 3) -th image 180724 by detecting the amount of change in the images up to. In FIG. 71C, the state of the image in the intermediate state is represented by the area where the position changes according to the frame (circular area) and the area where the position does not substantially change according to the frame (triangular area).
That is, the position of the circular area in the (p + 1) th image 180722 and the (p + 2) th image 180723 is located intermediate between the position in the pth image 180721 and the position in the (p + 3) th image 180724. That is, the (p + 1) th image 180
The 722 and the (p + 2) th image 180723 are obtained by performing motion compensation and interpolating image data. As described above, by performing motion compensation on an object moving on an image and interpolating image data, smooth display can be performed.

Furthermore, the (p + 1) th image 180722 and the (p + 2) th image 180723 are created so as to be in an intermediate state between the pth image 180721 and the (p + 3) th image 180724, and the brightness of the image is constant. It may be an image controlled by the rule of. The constant rule is, for example, as shown in FIG. 71 (C), a representative luminance of the p-th image 180721 is L,
The representative luminance of the image 180722 of p + 1) is Lc1, the (p + 2) th image 180723
When Lc2 represents a representative luminance of L, L> Lc1 or Lc in L, Lc1 and Lc2.
There may be a relationship of> Lc2 or Lc1 = Lc2. Desirably, 0.1L <Lc
There may be a relationship of 1 = Lc2 <0.8L. More preferably, 0.2L <Lc =
There may be a relationship of Lc2 <0.5L. Or conversely, in L, Lc1 and Lc2, there may be a relation of L <Lc1 or L <Lc2 or Lc1 = Lc2. Desirably, there may be a relation of 0.1Lc1 = 0.1Lc2 <L <0.8Lc1 = 0.8Lc2. More preferably, 0.2Lc1 = 0.2Lc2 <L <0.5Lc1 = 0.5
There may be a relationship of Lc2. By doing so, since the display can be simulated in an impulse type, it is possible to suppress the afterimage of the eye. Alternatively, images in which the brightness is changed may be alternately displayed. By doing this, it is possible to shorten the cycle in which the luminance changes, so it is possible to reduce flicker.

Thus, two different causes for motion blur (the motion of the image is not smooth,
By solving the image and the afterimage of the eye at the same time, it is possible to significantly reduce the motion blur.

Note that when the method in FIG. 71C is used, the display frame rate is small; therefore, the time for writing a signal to the display device can be lengthened. Therefore, since the clock frequency of the display device can be reduced, power consumption can be reduced. In addition, since the processing speed for performing motion compensation can be reduced, power consumption can be reduced.

Next, with reference to FIG. 72, representative luminance of the image will be described. 72 (A) to (D)
The figure shown in) schematically represents the state of temporal change of the displayed image, with the horizontal axis as time. FIG. 72E shows an example of a method of measuring the luminance of an image in a certain area.

As a method of measuring the brightness of the image, there is a method of measuring the brightness individually for each of the pixels constituting the image. Using this method, it is possible to measure the brightness precisely to the details of the image.

However, since the method of measuring the luminance individually for each of the pixels constituting the image is very laborious, another method may be used. Another way to measure the brightness of an image is to focus on an area in the image and measure the average brightness of that area. By this method, the brightness of the image can be easily measured. In the present embodiment, the luminance obtained by the method of measuring the average luminance of a certain area in an image is conveniently referred to as the representative luminance of the image.

Then, in order to obtain representative luminance of an image, a point as to which region in the image is to be focused will be described below.

FIG. 72A shows an example of a method of setting the luminance of a region (a triangular region) whose position does not substantially change with respect to the change of the image as a representative luminance of the image. Period Tin is a period of input image data, image 180801 is a p-th image, image 180802 is a (p + 1) -th image, image 18
0803 is the (p + 2) th image, the first area 180804 is the luminance measurement area in the pth image 180801, the second area 180805 is the luminance measurement area in the (p + 1) th image 180802, and the third area 180806 is the The luminance measurement areas in the image 180803 of (p + 2) are respectively shown. Here, the first to third regions may be approximately the same as the spatial position in the device. That is, by measuring the representative luminance of the image in the first to third regions, it is possible to determine the representative temporal change of the luminance of the image.

By measuring the representative luminance of the image, it can be determined whether the display is pseudo-impulse-type. For example, the luminance measured in the first region 180804 may be L,
Assuming that the luminance measured in the second region 180805 is Lc, if Lc <L, it can be said that the display is pseudo-impulsive. At this time, it can be said that the quality of moving pictures is improved.

In the luminance measurement region, the image quality can be improved when the representative amount of change in the luminance (relative luminance) of the image with respect to the change in time is in the following range. As the relative luminance, for example, the larger of the first region 180804 and the second region 180805, the second region 180805 and the third region 180806, and the first region 180804 and the third region 180806, respectively, is used. It can be a ratio of the smaller luminance to the luminance. That is, when the typical amount of change in luminance of the image with respect to the change in time is 0, the relative luminance is 100%. And if relative brightness is 80% or less, the quality of a moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of moving pictures can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative brightness is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of the moving image can be improved, and the power consumption and the flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72B shows an example of a method of measuring the luminance of the tile-divided area and using the average value as the representative luminance of the image. Period Tin is a period of input image data, image 1808
11 is the p-th image, the image 180812 is the (p + 1) th image, the image 180813 is the
The first area 180814 is the luminance measurement area in the pth image 180811, the second area 180815 is the luminance measurement area in the (p + 1) th image 180812, and the third area 180816 is the (p + 2) th image. The luminance measurement areas in the image 180813 are respectively shown. Here, the first to third regions may be approximately the same as the spatial position in the device. That is, by measuring the representative luminance of the image in the first to third regions, it is possible to determine the representative temporal change of the luminance of the image.

By measuring the representative luminance of the image, it can be determined whether the display is pseudo-impulse-type. For example, let Lc <L, where L is the average value of all the luminances measured in the first region 180814 and Lc is the average value of all the luminances measured in the second region 180815. For example, it can be said that the display is pseudo impulse type. At this time, it can be said that the quality of moving pictures is improved.

In the luminance measurement region, the image quality can be improved when the representative amount of change in the luminance (relative luminance) of the image with respect to the change in time is in the following range. As the relative luminance, for example, the larger of the first area 180814 and the second area 180815, the second area 180815 and the third area 180816, and the first area 180814 and the third area 180816, respectively. It can be a ratio of the smaller luminance to the luminance. That is, when the typical amount of change in luminance of the image with respect to the change in time is 0, the relative luminance is 100%. And if relative brightness is 80% or less, the quality of a moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of moving pictures can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative brightness is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of the moving image can be improved, and the power consumption and the flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72C shows an example of a method of measuring the luminance of the central region of the image and using the average value as the representative luminance of the image. The period Tin is the period of the input image data, the image 180821 is the p-th image, the image 180822 is the (p + 1) th image, the image 180823 is the (p + 2) -th image, and the first region 180824 is the luminance in the p-th image 180821. The measurement area, the second area 180825 represents the luminance measurement area in the (p + 1) th image 180822, and the third area 180826 represents the luminance measurement area in the (p + 2) th image 180823.

By measuring the representative luminance of the image, it can be determined whether the display is pseudo-impulse-type. For example, if the luminance measured in the first region 180824 is L,
Assuming that the luminance measured in the second region 180825 is Lc, if Lc <L, it can be said that the display is pseudo-impulse type. At this time, it can be said that the quality of moving pictures is improved.

In the luminance measurement region, the image quality can be improved when the representative amount of change in the luminance (relative luminance) of the image with respect to the change in time is in the following range. As the relative luminance, for example, the larger of the first region 180824 and the second region 180825, the second region 180825 and the third region 180826, and the first region 180824 and the third region 180826, respectively, is used. It can be a ratio of the smaller luminance to the luminance. That is, when the typical amount of change in luminance of the image with respect to the change in time is 0, the relative luminance is 100%. And if relative brightness is 80% or less, the quality of a moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of moving pictures can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative brightness is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of the moving image can be improved, and the power consumption and the flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72D shows an example of a method of measuring the luminances of a plurality of points sampled from the entire image and using the average value as the representative luminance of the image. Period Tin is a cycle of input image data,
The image 180831 is a p-th image, the image 180832 is a (p + 1) -th image, an image 1808
The 33rd is the (p + 2) th image, the first area 180834 is the luminance measurement area in the pth image 180831, the second area 180835 is the luminance measurement area in the (p + 1) th image 180832, and the third area 180836 is the third The luminance measurement areas in the image 180833 of (p + 2) are respectively shown.

By measuring the representative luminance of the image, it can be determined whether the display is pseudo-impulse-type. For example, let Lc <L, where L is the average value of all the luminances measured in the first region 180834 and Lc is the average value of all the luminances measured in the second region 180835. For example, it can be said that the display is pseudo impulse type. At this time, it can be said that the quality of moving pictures is improved.

In the luminance measurement region, the image quality can be improved when the representative amount of change in the luminance (relative luminance) of the image with respect to the change in time is in the following range. As the relative luminance, for example, larger ones of the first region 180834 and the second region 180835, the second region 180835 and the third region 180836, and the first region 180834 and the third region 180836, respectively. It can be a ratio of the smaller luminance to the luminance. That is, when the typical amount of change in luminance of the image with respect to the change in time is 0, the relative luminance is 100%. And if relative brightness is 80% or less, the quality of a moving image can be improved. In particular, if the relative luminance is 50% or less, the quality of moving pictures can be significantly improved. Furthermore, if the relative luminance is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, the relative brightness is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. That is,
If the relative luminance is 10% or more and 80% or less, the quality of the moving image can be improved, and the power consumption and the flicker can be reduced. Furthermore, if the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72 (E) is a diagram showing a measurement method in the luminance measurement region in the diagrams shown in FIGS. 72 (A) to (D). An area 180841 is a luminance measurement area of interest, and a point 180842 is a luminance measurement point in the area 180841. As the luminance measurement device with high time resolution may have a small measurement target range, when the area 180841 is large, it is not necessary to measure the entire area, but as shown in FIG. The brightness may be measured at a plurality of points without any bias, and the average value may be used as the luminance of the region 180841.

When the image has a combination of three primary colors of R, G and B, the measured luminance is R and G.
, And B may be combined luminance, R and G combined luminance, G and B combined luminance, and B and R combined luminance, or each of R, G, and B. It may be luminance.

Next, a method of detecting an image movement included in input image data and creating an intermediate state image,
A method of controlling the driving method in accordance with the movement of the image included in the input image data will be described.

An example of a method of detecting an image movement included in input image data and creating an intermediate state image will be described with reference to FIG. FIG. 73A shows the case where the display frame rate is twice the input frame rate (the conversion ratio is 2). FIG. 73 (A) schematically shows a method of detecting the movement of the image, with the horizontal axis representing time. A period Tin is a period of input image data, an image 180901 is a p-th image, and an image 180902 is a (p + 1) -th image.
, The image 180903 represents the (p + 2) -th image, respectively. In addition, a first region 180904, a second region 180905, and a third region 180906 are provided in the image as time-independent regions.

First, in the (p + 2) -th image 180903, the image is divided into a plurality of tile-like regions, and image data in a third region 180906, which is one of the regions, is focused.

Next, in the p-th image 180901, a range larger than the third region 180906 centered on the third region 180906 is focused. Here, a range larger than the third area 180906 centered on the third area 180906 is a data search range. The data search range is 180907 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
We assume 08. The horizontal range 180907 and the vertical range 180908 of the data search range may be a range obtained by expanding the horizontal range and the vertical range of the third region 180906 by about 15 pixels.

Then, within the data search range, a region having image data most similar to the image data in the third region 180906 is searched. The search method can use the least squares method or the like. As a region having the most similar image data as a result of the search, the first region 18090
Suppose that 4 is derived.

Next, a vector 180909 is derived as a quantity representing the difference in position between the derived first area 180904 and the third area 180906. The vector 180909 is called a motion vector.

Then, in the (p + 1) th image 180902, the vector obtained from the motion vector 180909, the image data in the third region 180906 in the (p + 2) th image 180903, and the first region in the p-th image 180901 The image data in 180904 form a second region 180905.

Here, a vector obtained from the motion vector 180909 will be referred to as a displacement vector 180910. The displacement vector 180910 has a role of determining the position forming the second region 180905. Second region 180905 is formed at a position separated from third region 180906 by displacement vector 180910. The displacement vector 180910 may be an amount obtained by multiplying the motion vector 180909 by a coefficient (1/2).

The image data in the second region 180905 in the (p + 1) th image 180902 is the image data in the third region 180906 in the (p + 2) th image 180903, and
It may be determined by the image data in the first area 180904 in the image 180901 of FIG. For example, the second region 1809 in the (p + 1) th image 180902
The image data in 05 is the third area 18090 in the (p + 2) th image 180903.
6 and the average value of the image data in the first region 180904 of the p-th image 180901.

In this manner, the second region 180905 in the (p + 1) th image 180902 can be formed, which corresponds to the third region 180906 in the (p + 2) th image 180903. The (p + 1) th image 180902 which is an intermediate state between the (p + 2) th image 180903 and the p-th image 180901 by performing the above-described processing also on other regions in the (p + 2) th image 180903 Can be formed.

FIG. 73B shows the case where the display frame rate is three times the input frame rate (the conversion ratio is 3). FIG. 73 (B) schematically shows a method of detecting the movement of the image, with the horizontal axis representing time. Period Tin is a period of input image data, image 1809
11 is the p-th image, the image 180912 is the (p + 1) th image, the image 180913 is the
The image of +2) and the image 180914 represent the (p + 3) -th image. Also,
In the image, a first region 180915 and a second region 1809 are used as time-independent regions.
16, a third region 180917 and a fourth region 180918 are provided.

First, in the (p + 3) th image 180914, the image is divided into a plurality of tile-like regions, and the image data in the fourth region 180918 which is one of the regions is noted.

Next, in the p-th image 180911, a range larger than the fourth region 180918 centered on the fourth region 180918 is focused. Here, a range larger than the fourth area 180918 centering on the fourth area 180918 is a data search range. The data search range is 180919 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
It will be 20. The horizontal range 180919 and the vertical range 180920 of the data search range may be a range obtained by expanding the horizontal range and the vertical range of the fourth region 180918 by about 15 pixels.

Then, in the data search range, a region having image data most similar to the image data in the fourth region 180918 is searched. The search method can use the least squares method or the like. As a region having the most similar image data as a result of the search, the first region 18091 is obtained.
Suppose that 5 is derived.

Next, a vector is derived as a quantity representing the difference in position between the derived first area 180915 and the fourth area 180918. Note that this vector is a motion vector 180921
I will call it.

Then, in the (p + 1) th image 180912 and the (p + 2) th image 180913, a first vector and a second vector obtained from the motion vector 180921, and
The image data in the fourth region 180918 in the (p + 3) th image 180914 and the image data in the first region 180915 in the p-th image 180911 form the second region 180916 and the third region 180917. Form.

Here, the first vector obtained from the motion vector 180921 is referred to as a first displacement vector 18
I will call it 0922. Also, the second vector is referred to as a second displacement vector 180923. The first displacement vector 180922 has a role of determining the position forming the second region 180916. The second region 180916 is formed at a position separated from the fourth region 180918 by the first displacement vector 180922. The first displacement vector 180922 may be an amount obtained by multiplying the motion vector 180921 by (1/3). The second displacement vector 180923 also has a role of determining the position where the third region 180917 is formed. The third area 180917 is formed at a position separated from the fourth area 180918 by the second displacement vector 180923. The second displacement vector 180923
May be an amount obtained by multiplying the motion vector 180921 by (2/3).

The image data in the second region 180916 in the (p + 1) th image 180912 is the image data in the fourth region 180918 in the (p + 3) th image 180914;
It may be determined by the image data in the first area 180915 in the image 180911 of For example, the second region 1809 in the (p + 1) th image 180912
The image data in the 16th is the fourth area 18091 in the (p + 3) th image 180914.
The average value of the image data in No. 8 and the image data in the first area 180915 in the p-th image 180911 may be used.

The image data in the third region 180917 in the (p + 2) th image 180913 includes the image data in the fourth region 180918 in the (p + 3) th image 180914, and
It may be determined by the image data in the first area 180915 in the image 180911 of For example, the third region 1809 in the (p + 2) th image 180913
The image data in the seventeenth region is the fourth region 18091 in the (p + 3) th image 180914.
The average value of the image data in No. 8 and the image data in the first area 180915 in the p-th image 180911 may be used.

Thus, the second region 180916 in the (p + 1) th image 180902, corresponding to the fourth region 180918 in the (p + 3) th image 180914, and
A third region 180917 in the p + 2) image 180913 can be formed.
Note that by performing the above-described processing on another region in the (p + 3) -th image 180914, an intermediate state between the (p + 3) -th image 180914 and the p-th image 180911 can be obtained.
An image 180912 of p + 1) and an image 180913 of (p + 2) can be formed.

Next, with reference to FIG. 74, an example of a circuit that detects the movement of an image included in input image data and creates an intermediate state image will be described. FIG. 74A illustrates a connection between a source driver for displaying an image in a display region, a peripheral driver circuit including a gate driver, and a control circuit for controlling the peripheral driver circuit. FIG. 74B is a diagram showing an example of a detailed circuit configuration of the control circuit. FIG. 74C is a diagram showing an example of a detailed circuit configuration of an image processing circuit included in the control circuit. FIG. 74D is a diagram showing another example of a detailed circuit configuration of the image processing circuit included in the control circuit.

As shown in FIG. 74A, the device in this embodiment may include a control circuit 181011, a source driver 181012, a gate driver 181013, and a display region 181014.

Note that the control circuit 181011, the source driver 181012 and the gate driver 181
013 may be formed on the same substrate as the display region 181014 is formed.

Note that the control circuit 181011, the source driver 181012 and the gate driver 181
013 is partially formed on the same substrate as the substrate on which the display region 181014 is formed, and the other circuits are formed on a substrate different from the substrate on which the display region 181014 is formed. It may be For example, the source driver 181012 and the gate driver 181013 may be formed on the same substrate as the display region 181014, and the control circuit 18101 may be formed as an external IC on a different substrate. Similarly, the gate driver 181013 may be formed on the same substrate as the display region 181014, and the other circuits may be formed as an external IC on a different substrate. Similarly, the source driver 181012, the gate driver 181013, and a part of the control circuit 181011 are formed on the same substrate as the display region 181014, and the other circuits are formed as external ICs on different substrates. It may be done.

The control circuit 181011 includes an external image signal 181000 and a horizontal synchronization signal 181001.
The vertical synchronization signal 181002 is input, and the image signal 181003, the source start pulse 181004, the source clock 181005, and the gate start pulse 18100.
6 and the gate clock 181007 may be output.

The source driver 181012 includes an image signal 181003 and a source start pulse 181.
It may be configured that the 004 and the source clock 181005 are input, and a voltage or current according to the image signal 181003 is output to the display region 181014.

The gate driver 181013 may be configured to receive the gate start pulse 181006 and the gate clock 181007, and output a signal that specifies the timing for writing the signal output from the source driver 181012 in the display area 181014.

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different from each other, a signal for controlling the timing of driving the source driver 181012 and the gate driver 18101 is also input the horizontal synchronization signal 181001 and the vertical synchronization signal 1810.
It will have a frequency different from 02. Therefore, in addition to the processing of the image signal 181003, a signal for controlling the timing of driving the source driver 181012 and the gate driver 18101 also needs to be processed. The control circuit 181011 may be a circuit having a function therefor. For example, when the frequency of the image signal 181003 is doubled with respect to the frequency of the external image signal 181000, the control circuit 181011 determines that the external image signal 18 is
Image signals included in 1000 are interpolated to generate an image signal 181003 of double frequency, and a signal for controlling timing is also controlled to be double frequency.

Further, as shown in FIG. 74 (B), the control circuit 181011 includes an image processing circuit 181015, and
And a timing generation circuit 181016.

The image processing circuit 181015 includes an external image signal 181000 and a frequency control signal 18100.
8 may be input, and the image signal 181003 may be output.

The timing generation circuit 181016 includes a horizontal synchronization signal 181001 and a vertical synchronization signal 181.
, And the source start pulse 181004 and the source clock 1810
05, a gate start pulse 181006, a gate clock 181007, and a frequency control signal 181008 may be output. Timing generation circuit 181016 may include a memory, a register, or the like that holds data for specifying the state of frequency control signal 181008. Further, timing generation circuit 181016 may be configured to receive a signal specifying the state of frequency control signal 181008 from the outside.

As illustrated in FIG. 74C, the image processing circuit 181015 performs high-speed processing with the motion detection circuit 181020, the first memory 181021, the second memory 181022, the third memory 181023, the luminance control circuit 181024, and the like. And a circuit 181025.

The motion detection circuit 181020 may be configured to receive a plurality of image data, detect a motion of the image, and output image data in an intermediate state of the plurality of image data.

The first memory 181021 receives the external image signal 181000 and holds the external image signal 181000 for a certain period, while the motion detection circuit 181020 and the second memory 1810
22 may be configured to output the external image signal 181000.

The second memory 181022 is configured to receive the image data output from the first memory 181021 and output the image data to the motion detection circuit 181020 and the high-speed processing circuit 181025 while holding the image data for a certain period. It may be.

The third memory 181023 may be configured to receive the image data output from the motion detection circuit 181020 and output the image data to the luminance control circuit 181024 while holding the image data for a certain period.

The high-speed processing circuit 181025 includes the image data output from the second memory 181022;
The image data output from the luminance control circuit 181024 and the frequency control signal 181008 may be input, and the image data may be output as an image signal 181003.

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the image processing circuit 181015 may generate an image signal 181003 by interpolating the image signal included in the external image signal 181000. Input external image signal 18100
0 is temporarily held in the first memory 181021. At that time, the second memory 18102
2 holds image data input in the previous frame. Motion detection circuit 18
1020 appropriately reads the image data held in the first memory 181021 and the second memory 181022, detects a motion vector from the difference between the two image data, and
Intermediate state image data may be generated. The generated intermediate state image data is held by the third memory 181023.

When the motion detection circuit 181020 generates intermediate state image data, the high speed processing circuit 1
Reference numeral 81025 denotes an image signal 18 for the image data held in the second memory 181022.
Output as 1003. After that, the image data held in the third memory 181023 is output as an image signal 181003 through the luminance control circuit 181024. At this time, the frequency at which the second memory 181022 and the third memory 181023 are updated is the same as the frequency of the external image signal 181000, but the frequency of the image signal 181003 output through the high speed processing circuit 181025 is the frequency of the external image signal 181000. It may be different from the frequency. Specifically, for example, the frequency of the image signal 181003 is the external image signal 181000.
1.5 times, 2 times and 3 times the frequency of However, the frequency is not limited to this and various frequencies can be used. The frequency of the image signal 181003 may be designated by the frequency control signal 181008.

The configuration of the image processing circuit 181015 shown in FIG. 74D is obtained by adding a fourth memory 181026 to the configuration of the image processing circuit 181015 shown in FIG. 74C. Thus, the image data output from the first memory 181021 and the second memory 181022
The image data output from the fourth memory 181026 is also output to the motion detection circuit 181020 in addition to the image data output from the second memory 181026, so that the motion of the image can be accurately detected.

When the input image data already includes a motion vector for data compression etc., for example, MPEG (Moving Picture Expert Gr)
In the case of image data based on the oup) standard, an intermediate state image may be generated as an interpolated image using this. At this time, a portion for generating a motion vector, which is included in the motion detection circuit 181020, becomes unnecessary. In addition, since the encoding and decoding processes relating to the image signal 181003 can be simplified, power consumption can be reduced.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Sixth Embodiment
In the present embodiment, the peripheral portion of the liquid crystal panel will be described.

FIG. 75 shows a backlight unit 20101 called an edge light type and a liquid crystal panel 2.
And an example of a liquid crystal display device having the In the edge light type, a light source is disposed at the end of the backlight unit, and the fluorescence of the light source is emitted from the entire light emitting surface.
The edge light type backlight unit is thin and power saving can be achieved.

The backlight unit 20101 includes a diffusion plate 20102, a light guide plate 20103, and a reflection plate 20.
And a lamp reflector 20105 and a light source 20106.

The light source 20106 has a function of emitting light as needed. For example, as the light source 20106, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20105 has a function of efficiently guiding the fluorescence from the light source 20106 to the light guide plate 20103. The light guide plate 20103 has a function of totally reflecting fluorescence and guiding light to the entire surface. The diffusion plate 20102 has a function of reducing unevenness in brightness. The reflecting plate 20104 is
It has a function of reflecting and reusing light leaked downward from the light guide plate 20103 (in the direction opposite to the liquid crystal panel 20107).

Note that a control circuit for adjusting the luminance of the light source 20106 is connected to the backlight unit 20101. This control circuit can adjust the luminance of the light source 20106.

76 (A), (B), (C) and (D) are diagrams showing the detailed configuration of the edge light type backlight unit. The description of the diffusion plate, the light guide plate, the reflection plate and the like will be omitted.

The backlight unit 20201 shown in FIG. 76A includes a cold cathode tube 20203 as a light source.
Is a configuration using And, in order to reflect the light from the cold cathode tube 20203 efficiently,
A lamp reflector 20202 is provided. Such a configuration is often used for a large display device due to the intensity of luminance from the cold cathode tube.

The backlight unit 20211 shown in FIG. 76B includes a light emitting diode (L
It is the structure using ED) 20213. For example, light emitting diodes (LEDs) that emit white light
20213 are arranged at predetermined intervals. A lamp reflector 20212 is provided to efficiently reflect the light from the light emitting diode (LED) 20213.

Since the brightness of the light emitting diode is high, the configuration using the light emitting diode is suitable for a large display device. Since the light emitting diode is excellent in color reproducibility, it is possible to display a more realistic image. Since the LED has a small chip, the layout area can be reduced. Therefore, the frame of the display device can be narrowed.

When the light emitting diode is mounted on a large display device, the light emitting diode can be disposed on the back of the substrate. The light emitting diodes maintain a predetermined distance, and light emitting diodes of respective colors are sequentially disposed. The arrangement of the light emitting diodes can improve color reproducibility.

The backlight unit 20221 shown in FIG. 76C has a configuration in which light emitting diodes (LEDs) 20223, light emitting diodes (LEDs) 20224, and light emitting diodes (LEDs) 20225 of respective colors RGB are used as light sources. Light-emitting diode (LED) 20 for each color RGB
A light emitting diode (LED) 20224 and a light emitting diode (LED) 20225 are disposed at predetermined intervals. Light-emitting diode (LED) 20223 for each color RGB
By using a light emitting diode (LED) 20224 and a light emitting diode (LED) 20225, color reproducibility can be enhanced. A lamp reflector 20222 is provided to efficiently reflect the light from the light emitting diode.

Since the luminance of the light emitting diode is high, the configuration using the light emitting diode of each color RGB as a light source is suitable for a large display device. Since the light emitting diode is excellent in color reproducibility, it is possible to display a more realistic image. Since the LED has a small chip, the layout area can be reduced.
Therefore, the frame of the display device can be narrowed.

Note that color display can be performed by sequentially turning on the RGB light emitting diodes according to time. It is a field sequential mode to say.

Note that a light emitting diode that emits white light and a light emitting diode (LED) 2022 of each color RGB
3. A light emitting diode (LED) 20224 and a light emitting diode (LED) 20225 can be combined.

When the light emitting diode is mounted on a large display device, the light emitting diode can be disposed on the back of the substrate. The light emitting diodes maintain a predetermined distance, and light emitting diodes of respective colors are sequentially disposed. The arrangement of the light emitting diodes can improve color reproducibility.

A backlight unit 20231 shown in FIG. 77D has a configuration in which light emitting diodes (LEDs) 20233, light emitting diodes (LEDs) 20234, and light emitting diodes (LEDs) 20235 of respective colors RGB are used as light sources. For example, light emitting diodes (LE
D) 20233, light emitting diode (LED) 20234, light emitting diode (LED) 20
A plurality of colors (for example, green) having a low light emission intensity out of 235 are arranged. By using a light emitting diode (LED) 20233, a light emitting diode (LED) 20234, and a light emitting diode (LED) 20235 of each color RGB, color reproducibility can be enhanced. A lamp reflector 20232 is provided to efficiently reflect the light from the light emitting diode.

Since the luminance of the light emitting diode is high, the configuration using the light emitting diode of each color RGB as a light source is suitable for a large display device. Since the light emitting diode is excellent in color reproducibility, it is possible to display a more realistic image. Since the LED has a small chip, the layout area can be reduced.
Therefore, the frame of the display device can be narrowed.

Note that color display can be performed by sequentially turning on the RGB light emitting diodes according to time. It is a field sequential mode to say.

Note that light emitting diodes that emit white light and light emitting diodes (LEDs) 2023 of each color RGB
3. A light emitting diode (LED) 20234 and a light emitting diode (LED) 20235 can be combined.

When the light emitting diode is mounted on a large display device, the light emitting diode can be disposed on the back of the substrate. The light emitting diodes maintain a predetermined distance, and light emitting diodes of respective colors are sequentially disposed. The arrangement of the light emitting diodes can improve color reproducibility.

FIG. 79A illustrates an example of a liquid crystal display device including a backlight unit called direct type and a liquid crystal panel. The direct type is a method of emitting the fluorescence of the light source from the entire light emitting surface by arranging the light source directly under the light emitting surface. The direct type backlight unit can efficiently use the amount of light emitted.

The backlight unit 20500 includes a diffusion plate 20501, a light shielding plate 20502, a lamp reflector 20503, and a light source 20504.

The light emitted from the light source 20504 is collected by the lamp reflector 20503 on one side of the backlight unit 20500. That is, the backlight unit 2050
0 has a surface that emits strong light and a surface that emits little light. At this time, the liquid crystal panel 20505 can be efficiently irradiated with the light emitted from the light source 20504 by arranging the liquid crystal panel 20505 on the side of the backlight unit 20500 that emits strong light.

The light source 20504 has a function of emitting light as needed. For example, as the light source 20504, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20503 has a function of efficiently guiding the fluorescence of the light source 20504 to the diffusion plate 20501 and the light shielding plate 20502. The light shielding plate 20502 has a function of reducing unevenness in lightness by increasing the light shielding as the light intensity increases in accordance with the arrangement of the light source 20504. The diffusion plate 20501 further has a function of reducing unevenness in brightness.

A control circuit for adjusting the luminance of the light source 20504 is connected to the backlight unit 20500. The control circuit can adjust the luminance of the light source 20504.

FIG. 79B illustrates an example of a liquid crystal display device including a backlight unit called direct type and a liquid crystal panel. The direct type is a method of emitting the fluorescence of the light source from the entire light emitting surface by arranging the light source directly under the light emitting surface. The direct type backlight unit can efficiently use the amount of light emitted.

The backlight unit 20510 includes a diffusion plate 20511, a light shielding plate 20512, a lamp reflector 20513, light sources (R) 20514a of respective colors RGB, a light source (G) 20514b, and a light source (B) 20514c.

Light emitted from the light source (R) 20514 a, the light source (G) 20514 b, and the light source (B) 20514 c is collected by the lamp reflector 20513 on one surface of the backlight unit 20510. That is, the backlight unit 20510 has a surface which emits strong light and a surface which hardly emits light. At this time, the backlight unit 20510
Light source (R) 205 by disposing the liquid crystal panel 20515 on the side where the
The light emitted from the light source (G) 20514 b and the light source (B) 20514 c can be efficiently irradiated to the liquid crystal panel 20515.

Light source (R) 20514 a for each color RGB, light source (G) 20514 b, and light source (B) 2051
4c has a function of emitting light as needed. For example, light source (R) 20514a, light source
G) 20514b and a light source (B) 20514c, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL or the like is used. The lamp reflector 20513 has a function of efficiently guiding the fluorescence of the light source 20514 to the diffusion plate 20511 and the light shielding plate 20512. The light shielding plate 20512 has a function of reducing unevenness in lightness by increasing the light shielding as the light intensity increases in accordance with the arrangement of the light source 20514. The diffusion plate 20511 further has a function of reducing unevenness in lightness.

A control circuit for adjusting the luminance of the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c of each color RGB is connected to the backlight unit 20510. By this control circuit, the light source (R) 20514 a of each color RGB, the light source (G
) 20514 b and the light source (B) 20514 c can be adjusted.

FIG. 77 is a view showing an example of the configuration of a polarizing plate (also referred to as a polarizing film).

The polarizing film 20300 includes a protective film 20301, a substrate film 20302, and a PVA.
A polarizing film 20303, a substrate film 20304, an adhesive layer 20305, and a release film 20306 are provided.

The PVA polarizing film 20303 has a function of producing light (linearly polarized light) only in a certain vibration direction. Specifically, the PVA polarizing film 20303 contains molecules (polarizers) in which the density of electrons differs greatly in the longitudinal and lateral directions. The PVA polarizing film 20303 can produce linearly polarized light by aligning the directions of molecules whose density of electrons greatly differs in the vertical and horizontal directions.

As an example, the PVA polarizing film 20303 is made of polyvinyl alcohol (Poly V
By doping the iodine compound into the polymer film of inyl Alcohol) and pulling the PVA film in a certain direction, a film in which iodine molecules are aligned in a certain direction can be obtained. The light parallel to the long axis of the iodine molecule is absorbed by the iodine molecule. In addition, you may use a dichroic dye instead of iodine as a highly durable use and high heat resistant use. The dye is preferably used in a liquid crystal display device that is required to have durability and heat resistance, such as an on-vehicle LCD or a projector LCD.

The PVA polarizing film 20303 is a film (substrate film 20302) whose base is on both sides.
And the substrate film 20304) can increase the reliability. In addition, PVA
The polarizing film 20303 may be sandwiched by a highly transparent, highly durable triacetylose (TAC) film. The substrate film and the TAC film function as a protective layer of a polarizer that the PVA polarizing film 20303 has.

On one of the substrate films (substrate film 20304), a pressure-sensitive adhesive layer 20305 to be attached to the glass substrate of the liquid crystal panel is attached. In addition, the adhesive layer 20305 is formed by apply | coating an adhesive to the substrate film (substrate film 20304) of one side. Adhesive layer 203
A release film 20306 (separate film) is provided at 05.

The other substrate film (substrate film 20302) is provided with a protective film 20301.

A hard coat scattering layer (anti-glare layer) may be provided on the surface of the polarizing film 20300. The hard coat scattering layer has fine asperities formed on its surface by AG treatment, and has an antiglare function to scatter external light, so that it is possible to prevent external light from being reflected on the liquid crystal panel. It is possible to prevent surface reflection.

A plurality of optical thin film layers different in refractive index may be multilayered (also referred to as anti-reflection processing or AR processing) on the surface of the polarizing film 20300. The multi-layered optical thin film layers having different refractive indices can reduce the surface reflectance by the interference effect of light.

FIG. 78 is a diagram showing an example of a system block of the liquid crystal display device.

In the pixel portion 20405, a signal line 20412 extends from the signal line driver circuit 20403. In the pixel portion 20405, a scan line 20410 is arranged so as to extend from the scan line driver circuit 20404. Then, a plurality of pixels are arranged in matrix in the intersection region of the signal line 20412 and the scan line 20410. Each of the plurality of pixels has a switching element. Therefore, voltages for controlling the tilt of liquid crystal molecules can be independently input to each of the plurality of pixels. A structure in which switching elements are provided in each intersection region as described above is called an active type. However, the configuration is not limited to such an active type, and may be a passive type. The passive type has a simple process because each pixel has no switching element.

The driver circuit portion 20408 includes a control circuit 20402, a signal line driver circuit 20403, and a scan line driver circuit 20404. The video signal 20401 is input to the control circuit 20402. Control circuit 20402 responds to video signal 20401 to control signal line drive circuit 2040.
3 and the scanning line drive circuit 20404 are controlled. Therefore, the video signal 20401 inputs control signals to the signal line driver circuit 20403 and the scan line driver circuit 20404, respectively. Then, in response to the control signal, the signal line drive circuit 20403 transmits the video signal to the signal line 2041.
2 and the scan line driver circuit 20404 inputs a scan signal to the scan line 20410. Then, the switching element of the pixel is selected according to the scanning signal, and the video signal is input to the pixel electrode of the pixel.

The control circuit 20402 also controls the power supply 20407 according to the video signal 20401. The power source 20407 has means for supplying power to the lighting means 20406. As the illumination unit 20406, an edge light type backlight unit or a direct type backlight unit can be used. However, a front light may be used as the illumination unit 20406. The front light is a plate-like light unit including a light emitter and a light guide mounted on the front side of the pixel portion to illuminate the whole. By such illumination means,
The pixel portion can be illuminated evenly with low power consumption.

As illustrated in FIG. 78B, the scan line driver circuit 20404 includes a circuit functioning as a shift register 20441, a level shifter 20442, and a buffer 20443. Signals such as a gate start pulse (GSP) and a gate clock signal (GCK) are input to the shift register 20441.

As shown in FIG. 78C, the signal line driver circuit 20403 includes a shift register 20431, a first latch 20432, a second latch 20433, a level shifter 20434, and a buffer 2.
It has a circuit functioning as 0435. The circuit functioning as the buffer 20435 is a circuit having a function of amplifying a weak signal and includes an operational amplifier and the like. Level shifter 20
A signal such as a start pulse (SSP) is input to 434, and data (DATA) such as a video signal is input to the first latch 20432. The second latch 20433 latches (LAT
Signals can be temporarily held and simultaneously input to the pixel portion 20405. This is called line sequential drive. Therefore, the second latch can be unnecessary if the pixel is to be subjected to dot-sequential drive instead of line-sequential drive.

In the present embodiment, a known liquid crystal panel can be used. For example, as a liquid crystal panel, a structure in which a liquid crystal layer is sealed between two substrates can be used.
A transistor, a capacitor, a pixel electrode, an alignment film, and the like are formed over one of the substrates. A polarizing plate, a retardation plate or a prism sheet may be disposed on the side opposite to the top surface of one of the substrates. On the other substrate, a color filter, a black matrix, a counter electrode, an alignment film, and the like are formed. A polarizing plate or a retardation plate may be disposed on the side opposite to the upper surface of the other substrate. The color filter and the black matrix may be formed on the upper surface of one of the substrates. In addition, the slit (on the top side of one substrate or its opposite side)
By arranging the grid, three-dimensional display can be performed.

In addition, it is possible to arrange a polarizing plate, a retardation plate and a prism sheet between two substrates. Alternatively, it can be integral with any of the two substrates.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Seventh Embodiment
In this embodiment mode, a structure of a pixel which can be applied to a liquid crystal display device and an operation of the pixel will be described.

In the present embodiment, TN (Twisted Nem) is used as the operation mode of the liquid crystal.
atic) mode, IPS (In-Plane-Switching) mode, FFS
Fringe Field Switching mode, MVA (Multi-dom)
ain Vertical Alignment) mode, PVA (Patterned)
Vertical Alignment), ASM (Axially Symmetr)
ic aligned Micro-cell mode, OCB (Optical Co)
mpensated Birefringence) mode, FLC (Ferroele)
ctric Liquid Crystal) mode, AFLC (AntiFerroe)
lectric liquid crystal) can be used.

FIG. 131A illustrates an example of a pixel structure which can be applied to a liquid crystal display device.

The pixel 40100 includes a transistor 40101, a liquid crystal element 40102, and a capacitor 4010.
It has three. The gate of the transistor 40101 is connected to the wiring 40105.
The first terminal of the transistor 40101 is connected to the wiring 40104. Transistor 4
A second terminal of the electrode 0101 is connected to a first electrode of the liquid crystal element 40102 and a first electrode of the capacitor 40103. The second electrode of the liquid crystal element 40102 corresponds to the counter electrode 40107. The second electrode of the capacitor 40103 is connected to the wiring 40106.

The wiring 40104 functions as a signal line. The wiring 40105 functions as a scan line. The wiring 40106 functions as a capacitor line. The transistor 40101 functions as a switch. The capacitor 40103 functions as a storage capacitor.

The transistor 40101 may function as a switch, and the polarity of the transistor 40101 may be a p-channel transistor or an n-channel transistor.

Note that a video signal is input to the wiring 40104. A scan signal is input to the wiring 40105. The wiring 40106 is supplied with a certain potential. The scanning signal is a digital voltage signal at H level or L level. When the transistor 40101 is an n-channel transistor, the H level of the scan signal is a potential at which the transistor 40101 can be turned on, and the L level of the scan signal is a potential at which the transistor 40101 can be turned off. Or transistor 4
When the 0101 is a P-channel type, the H level of the scan signal is a potential at which the transistor 40101 can be turned off, and the L level of the scan signal is a potential at which the transistor 40101 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. The current of the video signal may be analog or digital. The video signal is at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Note that the constant potential supplied to the wiring 40106 is preferably equal to the potential of the counter electrode 40107.

The operation of the pixel 40100 is described separately for the case where the transistor 40101 is on and the case where the transistor 40101 is off.

When the transistor 40101 is on, the wiring 40104 and the liquid crystal element 40102
And the first electrode of the capacitor 40103 are electrically connected. Therefore, the video signal is input from the wiring 40104 to the first electrode (pixel electrode) of the liquid crystal element 40102 and the first electrode of the capacitor 40103 through the transistor 40101.
Then, the capacitor 40103 holds a potential difference between the video signal and the potential supplied to the wiring 40106.

When the transistor 40101 is off, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) and the first electrode of the capacitor 40103 are electrically disconnected. Therefore, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 are in a floating state. Since the capacitor 40103 holds a potential difference between the video signal and the potential supplied to the wiring 40106, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 can be formed.
The electrodes maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40102 is
Transmittance according to the video signal.

FIG. 131B illustrates an example of a pixel structure which can be applied to a liquid crystal display device. In particular, FIG. 131B is a diagram illustrating an example of a pixel configuration which can be applied to a liquid crystal display device suitable for a lateral electric field mode (including an IPS mode and an FFS mode).

The pixel 40110 includes a transistor 40111, a liquid crystal element 40112, and a capacitor 4011.
It has three. The gate of the transistor 40111 is connected to the wiring 40115.
The first terminal of the transistor 40111 is connected to the wiring 40114. Transistor 4
A second terminal of the 0111 is connected to a first electrode of the liquid crystal element 40112 and a first electrode of the capacitor 40113. The second electrode of the liquid crystal element 40112 is connected to the wiring 40116. The second electrode of the capacitor 40113 is connected to the wiring 40116.

The wiring 40114 functions as a signal line. The wiring 40115 functions as a scan line. The wiring 40116 functions as a capacitor line. The transistor 40111 functions as a switch. The capacitive element 40113 functions as a storage capacitor.

The transistor 40111 may function as a switch, and the polarity of the transistor 40111 may be a p-channel transistor or an n-channel transistor.

Note that a video signal is input to the wiring 40114. A scan signal is input to the wiring 40115. The wiring 40116 is supplied with a certain potential. The scanning signal is a digital voltage signal at H level or L level. When the transistor 40111 is an n-channel transistor, the H level of the scan signal is a potential at which the transistor 40111 can be turned on, and the L level of the scan signal is a potential at which the transistor 40111 can be turned off. Or transistor 4
When 0111 is a P-channel type, the H level of the scan signal is a potential at which the transistor 40111 can be turned off, and the L level of the scan signal is a potential at which the transistor 40111 can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And, the current of the video signal may be analog or digital. The video signal is at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40110 is described separately for the case where the transistor 40111 is on and the case where the transistor 40111 is off.

When the transistor 40111 is on, the wiring 40114 and the liquid crystal element 40112 are
And the first electrode of the capacitor 40113 are electrically connected. Therefore, the video signal is input from the wiring 40114 to the first electrode (pixel electrode) of the liquid crystal element 40112 and the first electrode of the capacitor 40113 through the transistor 40111.
Then, the capacitor 40113 holds a potential difference between the video signal and the potential supplied to the wiring 40116.

When the transistor 40111 is off, the wiring 40114 and the liquid crystal element 40112 are
The first electrode (pixel electrode) and the first electrode of the capacitor 40113 are electrically disconnected. Therefore, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113 are in a floating state. Since the capacitor 40113 holds a potential difference between the video signal and the potential supplied to the wiring 40116, the first electrode of the liquid crystal element 40112 and the first of the capacitors 40113 can be formed.
The electrodes maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40112 is
Transmittance according to the video signal.

FIG. 132 is a diagram illustrating an example of a pixel configuration which can be applied to a liquid crystal display device. In particular, Figure 132.
Is an example of a pixel configuration that can reduce the number of wires and increase the aperture ratio of the pixel.

FIG. 132 shows two pixels (pixel 40200 and pixel 40210) arranged in the same column direction.
Indicates For example, when the pixel 40200 is arranged in the Nth row, the pixel 40210 is N +
It is arranged in the first line.

The pixel 40200 includes a transistor 40201, a liquid crystal element 40202, and a capacitor 4020.
It has three. The gate of the transistor 40201 is connected to the wiring 40205.
The first terminal of the transistor 40201 is connected to the wiring 40204. Transistor 4
The second terminal of 0201 is connected to the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203. The second electrode of the liquid crystal element 40202 corresponds to the counter electrode 40207. The second electrode of the capacitor 40203 is connected to the same wiring as the gate of the transistor in the previous row.

The pixel 40210 includes a transistor 40211, a liquid crystal element 40212, and a capacitor 4021.
It has three. The gate of the transistor 40211 is connected to the wiring 40215.
A first terminal of the transistor 40211 is connected to the wiring 40204. Transistor 4
A second terminal of the capacitor 0211 is connected to a first electrode of the liquid crystal element 40212 and a first electrode of the capacitor 40213. The second electrode of the liquid crystal element 40212 corresponds to the counter electrode 40217. The second electrode of the capacitor 40213 has the same wiring (wiring 40205) as the gate of the transistor in the previous row
It is connected to the.

The wiring 40204 functions as a signal line. The wiring 40205 functions as a scan line in the Nth row. The wiring 40206 functions as a capacitor line in the Nth row. The transistor 40201 functions as a switch. The capacitor 40203 functions as a storage capacitor.

The wiring 40214 functions as a signal line. The wiring 40215 functions as a scan line in the (N + 1) th row. The wiring 40216 functions as a capacitor line in the (N + 1) th row. Transistor 4021
1 functions as a switch. The capacitor element 40213 functions as a storage capacitor.

The transistor 40201 and the transistor 40211 may function as switches.
The polarity of the transistor 40201 and the polarity of the transistor 40211 may be p-channel or n-channel.

Note that a video signal is input to the wiring 40204. The scanning signal (
Line N) is input. The scan signal (the (N + 1) -th row) is input to the wiring 40215.

The scanning signal is a digital voltage signal at H level or L level. Transistor 40201 (
Alternatively, in the case where the transistor 40211) is an n-channel transistor, the H level of the scan signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned on, and the L level of the scan signal is a potential at which the transistor 40201 (or the transistor 40211) can be off. Alternatively, in the case where the transistor 40201 (or the transistor 40211) is a p-channel transistor,
The H level of the scan signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned off, and the L level of the scan signal is the transistor 40201 (or the transistor 40211).
) Can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current.
And, the current of the video signal may be analog or digital. The video signal is at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40200 will be described separately for the case where the transistor 40201 is on and the case where the transistor 40201 is off.

When the transistor 40201 is on, the wiring 40204 and the liquid crystal element 40202
And the first electrode of the capacitor 40203 are electrically connected. Accordingly, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40202 and the first electrode of the capacitor 40203 through the transistor 40201.
Then, the capacitor 40203 holds a potential difference between the video signal and a potential supplied to the same wiring as the gate of the transistor in the previous row.

When the transistor 40201 is off, the wiring 40204 and the liquid crystal element 40202
And the first electrode of the capacitor 40203 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 are in a floating state. Since the capacitor 40203 holds a potential difference between the video signal and a potential supplied to the same wiring as the gate of the transistor in the previous row, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 are video Maintain the same (corresponding) potential as the signal. Note that
The liquid crystal element 40202 has a transmittance corresponding to the video signal.

The operation of the pixel 40210 is described separately for the case where the transistor 40211 is on and the case where the transistor 40211 is off.

When the transistor 40211 is on, the wiring 40204 and the liquid crystal element 40212 are
And the first electrode of the capacitor 40213 are electrically connected. Thus, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40212 and the first electrode of the capacitor 40213 through the transistor 40211.
Then, the capacitor 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row.

When the transistor 40211 is off, the wiring 40204 and the liquid crystal element 40212 are
And the first electrode of the capacitor 40213 are electrically disconnected. Thus, the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213 are in a floating state. The capacitor 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row, the liquid crystal element 4021
The two first electrodes and the first electrode of the capacitor 40213 maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40212 has transmittance in accordance with the video signal.

FIG. 133 is a diagram illustrating an example of a pixel configuration which can be applied to a liquid crystal display device. In particular, FIG.
These are examples of the pixel structure which can improve a viewing angle by using a sub pixel.

The pixel 40320 has a sub pixel 40300 and a sub pixel 40310. Pixel 403
Although the case where 20 has two sub-pixels will be described, the pixel 40320 may have three or more sub-pixels.

The sub pixel 40300 includes a transistor 40301, a liquid crystal element 40302, and a capacitor 40.
It has 303. The gate of the transistor 40301 is connected to the wiring 40305. The first terminal of the transistor 40301 is connected to the wiring 40304. A second terminal of the transistor 40301 is a first electrode of the liquid crystal element 40302 and a first terminal of the capacitor 40303.
Connected to the electrode. The second electrode of the liquid crystal element 40302 corresponds to the counter electrode 40307. The second electrode of the capacitor 40303 is connected to the wiring 40306.

The sub pixel 40310 includes a transistor 40311, a liquid crystal element 40312, and a capacitor 40.
It has 313. The gate of the transistor 40311 is connected to the wiring 40315. The first terminal of the transistor 40301 is connected to the wiring 40304. A second terminal of the transistor 40311 is a first electrode of the liquid crystal element 40312 and a first terminal of the capacitor 40313.
Connected to the electrode. The second electrode of the liquid crystal element 40312 corresponds to the counter electrode 40317. The second electrode of the capacitor 40313 is connected to the wiring 40306.

The wiring 40304 functions as a signal line. The wiring 40305 functions as a scan line. The wiring 40315 functions as a signal line. The wiring 40306 functions as a capacitor line. The transistor 40301 functions as a switch. The transistor 40311 functions as a switch. The capacitor 40303 functions as a storage capacitor. The capacitor 40313 functions as a storage capacitor.

The transistor 40301 may function as a switch, and the polarity of the transistor 40301 may be a p-channel transistor or an n-channel transistor. The transistor 40311 may function as a switch, and the polarity of the transistor 40311 may be P-channel or N
It may be a channel type.

Note that a video signal is input to the wiring 40304. A scan signal is input to the wiring 40305. A scan signal is input to the wiring 40315. The wiring 40306 is supplied with a certain potential.

The scanning signal is a digital voltage signal at H level or L level. Transistor 403
When 01 (or the transistor 40311) is an N-channel type, the H level of the scan signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned on, and the L level of the scan signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off . Alternatively, in the case where the transistor 40301 (or the transistor 40311) is a p-channel transistor, the H level of the scan signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off, and the L level of the scan signal is the transistor 40301 (or the transistor 40).
311) can be turned on. The video signal is an analog voltage. However, the present invention is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And, the current of the video signal may be analog or digital. The video signal is at a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Wiring 4
The constant potential supplied to 0306 is the potential of the counter electrode 40307 or the counter electrode 4031.
Preferably, it is equal to the potential of 7.

As for the operation of the pixel 40320, the transistor 40301 is turned on and the transistor 4031 is turned on.
The case where 1 is off, the case where the transistor 40301 is off and the transistor 40311 is on, and the case where the transistor 40301 and the transistor 40311 are off are separately described.

In the case where the transistor 40301 is on and the transistor 40311 is off, the wiring 40304 and the first electrode (pixel electrode) of the liquid crystal element 40302 in the sub pixel 40300
And the first electrode of the capacitor 40303 are electrically connected. Therefore, the video signal is input from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 through the transistor 40301. And the capacitive element 403
03 holds the potential difference between the video signal and the potential supplied to the wiring 40306. At this time, in the sub pixel 40310, the wiring 40304 and a first electrode of the liquid crystal element 40312 (
The pixel electrode and the first electrode of the capacitor 40313 are electrically disconnected. Therefore, the video signal is not input to the sub pixel 40310.

When the transistor 40301 is turned off and the transistor 40311 is turned on, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 in the sub pixel 40300 Be done. Therefore, the liquid crystal element 4
The first electrode of 0302 and the first electrode of the capacitor 40303 are in a floating state. Capacitive element 40
Since 303 holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 have the same (corresponding) potential as the video signal. maintain. At this time, the wiring 403 in the sub-pixel 40310
The fourth electrode 04 is electrically connected to the first electrode (pixel electrode) of the liquid crystal element 40312 and the first electrode of the capacitor 40313. Therefore, the video signal is transmitted from the wiring 40304 to the transistor 40311 and the first electrode (pixel electrode) of the liquid crystal element 40312 and the capacitor 4031
It is input to the first electrode of three. The capacitor 40313 is connected to the video signal and the wiring 40316.
Hold the potential difference with the potential supplied to the

When the transistor 40301 and the transistor 40311 are off, the sub-pixel 4
At 0300, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303. Therefore, the liquid crystal element 4030
The two first electrodes and the first electrode of the capacitor 40303 are in a floating state. Capacitive element 40303
Since the potential difference between the video signal and the potential supplied to the wiring 40306 is held, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 are the same as the video signal (see FIG.
Corresponding) maintain the potential. Note that the liquid crystal element 40302 has a transmittance corresponding to the video signal. At this time, at this time, in the sub pixel 40310, the wiring 40304, and the first electrode (pixel electrode) of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are electrically disconnected. Therefore, the first electrode of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are in a floating state. Since the capacitor 40313 holds a potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40312 and the capacitor 403 are kept.
The 13 first electrodes maintain the same (corresponding) potential as the video signal. Liquid crystal element 40
The transmittance 312 corresponds to the video signal.

The video signal input to the sub pixel 40300 may have a value different from that of the video signal input to the sub pixel 40310. In this case, the alignment of the liquid crystal molecules of the liquid crystal element 40302 is
Since the orientation of the liquid crystal molecules can be different from that of 0313, the viewing angle can be widened.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Eighth Embodiment
In the present embodiment, a method of driving a display device will be described. In particular, a method of driving a liquid crystal display device is described.

The liquid crystal panel that can be used for the liquid crystal display device described in this embodiment has a structure in which a liquid crystal material is sandwiched between two substrates. The two substrates each include an electrode for controlling an electric field applied to the liquid crystal material. A liquid crystal material is a material whose optical and electrical properties are changed by an externally applied electric field. Therefore, the liquid crystal panel
It is a device capable of obtaining desired optical and electrical properties by controlling a voltage applied to a liquid crystal material using an electrode of a substrate. Then, by arranging a large number of electrodes in parallel in plan view, each can be used as a pixel, and by individually controlling the voltage applied to the pixel, a liquid crystal panel capable of displaying a fine image can be obtained.

Here, the response time of the liquid crystal material to the change of the electric field is the distance between the two substrates (cell gap)
And depending on the type of liquid crystal material, etc., but generally several milliseconds to several tens of milliseconds. Furthermore, when the amount of change in the electric field is small, the response time of the liquid crystal material is further increased. This property causes an obstacle in image display such as afterimage, tailing and a drop in contrast when displaying a moving image by a liquid crystal panel, particularly when changing from half tone to another half tone (change in electric field) The degree of the above-mentioned failure becomes remarkable when

On the other hand, as a problem unique to liquid crystal panels using an active matrix, there is a change in write voltage due to constant charge driving. The constant charge drive in the present embodiment will be described below.

The pixel circuit in the active matrix includes a switch that controls writing and a capacitive element that holds a charge. The driving method of the pixel circuit in the active matrix is such that after the switch is turned on and a predetermined voltage is written to the pixel circuit, the switch is immediately turned off to hold the charge in the pixel circuit (hold state). In the hold state, charge exchange is not performed between the inside and the outside of the pixel circuit (constant charge). Generally, the period in which the switch is off is about several hundred times (the number of scanning lines) times longer than the period in which the switch is on. Therefore, the switch of the pixel circuit may be considered to be almost off.
From the above, it is assumed that the constant charge drive in this embodiment is a drive method in which the pixel circuit is in the hold state for most of the time when the liquid crystal panel is driven.

Next, the electrical characteristics of the liquid crystal material will be described. In the liquid crystal material, when the electric field applied from the outside changes, the dielectric properties also change at the same time as the optical properties change. That is, when each pixel of the liquid crystal panel is considered as a capacitive element (liquid crystal element) sandwiched between two electrodes, the capacitive element is a capacitive element whose electrostatic capacitance changes with the applied voltage. This phenomenon is called dynamic capacitance.

As described above, in the case of driving the capacitive element whose capacitance is changed by the applied voltage by the above-described constant charge driving, the following problems occur. That is, there is a problem that when the capacitance of the liquid crystal element is changed in the hold state in which the charge transfer is not performed, the applied voltage is also changed. This can be understood from the fact that the amount of charge is constant in the relationship of (amount of charge) = (capacitance) × (applied voltage).

For the above reasons, in the liquid crystal panel using the active matrix, the voltage in the hold state is changed from the voltage in the writing state by the constant charge driving. As a result, the transmittance of the liquid crystal element is different from the change in the driving method which does not take the hold state. This is shown in FIG. FIG. 83A shows an example of control of a voltage written to a pixel circuit, where time is plotted on the horizontal axis and absolute value of voltage is plotted on the vertical axis. FIG. 83B shows a control example of the voltage written to the pixel circuit when time is taken on the horizontal axis and voltage is taken on the vertical axis. In FIG. 83C, the horizontal axis represents time, and the vertical axis represents the transmittance of the liquid crystal element.
FIG. 83 shows a time change of transmittance of the liquid crystal element when the voltage shown in FIG. 83A or FIG. 83B is written to the pixel circuit. In FIG. 83 (A) to (C), a period F represents a voltage rewriting period, and the time to rewrite the voltage is t ₁ , t ₂ , t ₃ , t ₄ ,.
・ We explain as.

Here, the write voltage corresponding to the image data input to the liquid crystal display device is | V ₁ | for rewriting at time 0, | for rewriting at time t ₁ , t ₂ , t ₃ , t ₄ ,.
Suppose that V ₂ |. (See Figure 83 (A))

The polarity of the write voltage corresponding to the image data input to the liquid crystal display device may be switched periodically. (Reversal Driving: See FIG. 83B) By this method, direct current voltage can be applied as little as possible to the liquid crystal, so that burn-in and the like due to deterioration of the liquid crystal element can be prevented. Note that the cycle of switching the polarity (inversion cycle) may be the same as the voltage rewrite cycle. In this case, since the inversion cycle is short, the occurrence of flicker due to the inversion drive can be reduced. Furthermore, the inversion period may be a period that is an integral multiple of the voltage rewriting period. In this case, power consumption can be reduced because the inversion period is long and the frequency can be reduced by changing the polarity to write the voltage.

FIG. 83 (C) shows a time change of transmittance of the liquid crystal element when a voltage as shown in FIG. 83 (A) or FIG. 83 (B) is applied to the liquid crystal element. Here, the voltage to the liquid crystal element | V ₁
Is applied, and the transmittance of the liquid crystal element after a sufficient time has elapsed is taken as TR ₁ . Similarly, a voltage | V ₂ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient time has elapsed is taken as TR ₂ . When the voltage applied to the liquid crystal element changes from | V ₁ | to | V ₂ | at time t ₁ , the transmittance of the liquid crystal element does not immediately become TR ₂ as shown by the broken line 30401, Change slowly. For example, the rewriting period of the voltage, when the same as the frame period of the image signal of 60 Hz (16.7 msec), until the transmittance is changed to TR _2, it is necessary to time of several frames.

However, the smooth temporal change in transmittance as shown by the broken line 30401 is when the voltage | V ₂ | is accurately applied to the liquid crystal element. In an actual liquid crystal panel, for example, a liquid crystal panel using an active matrix, since the voltage in the hold state is changed from the voltage in the writing state by constant charge driving, the transmittance of the liquid crystal element is a broken line 30401 It does not become a time change as shown in, but instead becomes a step time change as shown by a solid line 30401. This is because the voltage changes due to the constant charge drive, and thus the target voltage can not be reached in one writing. As a result, the response time of the transmittance of the liquid crystal element is apparently longer than the original response time (broken line 30401), and the image display defects such as afterimage, tailing, and contrast deterioration are remarkable. It will cause it.

By using the overdrive driving, it is possible to solve simultaneously the phenomenon that the intrinsic response time of the liquid crystal element and the apparent response time due to the lack of writing by the dynamic capacitance and the constant charge drive are further increased. FIG. 84 shows this state. FIG. 84A shows an example of control of the voltage written to the pixel circuit, where time is plotted on the horizontal axis and absolute value of voltage is plotted on the vertical axis. FIG. 84B shows a control example of the voltage to be written to the pixel circuit when time is taken on the horizontal axis and voltage is taken on the vertical axis. 84C, the horizontal axis represents time, the vertical axis represents the transmittance of the liquid crystal element, and the voltage represented by FIG. 84A or 84B is written to the pixel circuit. It represents the time change of the transmittance. In FIGS. 84 (A) to 84 (C), a period F represents a voltage rewriting cycle, and times at which the voltage is rewritten are described as t ₁ , t ₂ , t ₃ , t ₄ ,.

Here, the write voltage corresponding to the image data input to the liquid crystal display device is | V ₁ | for rewriting at time 0, | V ₃ | for rewriting at time t ₁ , time t ₂ , t ₃ , t
_In the rewriting in ₄ , ..., it is assumed that | V ₂ |. (Refer to FIG. 84 (A))

The polarity of the write voltage corresponding to the image data input to the liquid crystal display device may be switched periodically. (Reversal Driving: See FIG. 84B) By this method, direct current voltage can be applied as little as possible to the liquid crystal, so that burn-in and the like due to deterioration of the liquid crystal element can be prevented. Note that the cycle of switching the polarity (inversion cycle) may be the same as the voltage rewrite cycle. In this case, since the inversion cycle is short, the occurrence of flicker due to the inversion drive can be reduced. Furthermore, the inversion period may be a period that is an integral multiple of the voltage rewriting period. In this case, power consumption can be reduced because the inversion period is long and the frequency can be reduced by changing the polarity to write the voltage.

A temporal change in transmittance of the liquid crystal element when a voltage as shown in FIG. 84A or 84B is applied to the liquid crystal element is shown in FIG. Here, the voltage to the liquid crystal element | V ₁
Is applied, and the transmittance of the liquid crystal element after a sufficient time has elapsed is taken as TR ₁ . Similarly, a voltage | V ₂ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient time has elapsed is taken as TR ₂ . Similarly, the voltage | V ₃ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient time has elapsed is set to TR ₃ . At time _{t 1,} the voltage applied to the liquid crystal element is | _{V 1} | from | V
_When it changes to ₃ |, the transmittance of the liquid crystal element tries to change the transmittance to TR ₃ in several frames, as indicated by the broken line 30501. However, the voltage | _{V 3} | applied at the end at time _{t 2,} later than time _{t 2,} the voltage | _{V 2} | is applied. Therefore, the transmittance of the liquid crystal element is not as shown by a broken line 30501 but as shown by a solid line 30502. here,
It is preferable to set the value of the voltage | V ₃ | so that the transmittance is approximately TR ₂ at time t ₂ . Here, the voltage | V ₃ | is also called an overdrive voltage.

That is, by changing the overdrive voltage | V ₃ |, the response time of the liquid crystal element can be controlled to some extent. This is because the response time of the liquid crystal changes with the strength of the electric field. Specifically, the stronger the electric field, the shorter the response time of the liquid crystal element, and the weaker the electric field, the longer the response time of the liquid crystal element.

Note that it is preferable to change the overdrive voltage | V ₃ | in accordance with the amount of voltage change, that is, the voltages | V ₁ | and | V ₂ | that give the target transmittances TR ₁ and TR _2. . This is because even if the response time of the liquid crystal element is changed by the amount of change in voltage, the optimum response time can always be obtained if the overdrive voltage | V ₃ | is changed accordingly. is there.

The overdrive voltage | V ₃ | is preferably changed according to the mode of liquid crystal such as TN, VA, IPS, OCB. This is because even if the response speed of the liquid crystal varies depending on the mode of the liquid crystal, it is possible to always obtain an optimal response time by changing the overdrive voltage | V ₃ | in accordance therewith.

The voltage rewrite cycle F may be the same as the frame cycle of the input signal. In this case, since the peripheral drive circuit of the liquid crystal display device can be simplified, a liquid crystal display device with low manufacturing cost can be obtained.

The voltage rewrite cycle F may be shorter than the frame cycle of the input signal. For example,
The voltage rewriting period F may be 1/2, 1/3 or less of the frame period of the input signal. It is effective to use this method together with the measures against the deterioration of the moving picture quality caused by the hold drive of the liquid crystal display, such as black insertion drive, backlight blinking, backlight scan, intermediate image insertion drive by motion compensation, etc. is there. That is, since the response time of the liquid crystal element which is required is short, it is relatively easy to use the overdrive driving method described in this embodiment because the response time of the required liquid crystal element is short. The response time of the liquid crystal element can be shortened. Although it is possible to shorten the response time of the liquid crystal element essentially by the cell gap, the liquid crystal material, the liquid crystal mode and the like, it is technically difficult. Therefore, it is very important to use a method for shortening the response time of the liquid crystal element from the driving method such as overdrive.

The voltage rewriting period F may be longer than the frame period of the input signal. For example,
The voltage rewriting period F may be twice, three times or more of the frame period of the input signal. It is effective to use this method in combination with means (circuit) for determining whether or not voltage rewriting is performed for a long time. That is, when the voltage rewriting is not performed for a long time, the operation of the circuit can be stopped during that period by not performing the voltage rewriting operation itself, so that a liquid crystal display device with low power consumption can be obtained. Can.

Next, a specific method for changing the overdrive voltage | V ₃ | in accordance with the voltages | V ₁ | and | V ₂ | which give the target transmittances TR ₁ and TR ₂ will be described.

The overdrive circuit is a circuit for appropriately controlling the overdrive voltage | V ₃ | in accordance with the voltages | V ₁ | and | V ₂ | that give the target transmittances TR ₁ and TR _2. The signal input to the drive circuit is a voltage | V giving a transmittance TR ₁
A signal relating to ₁ | and a signal relating to a voltage | V ₂ | giving the transmittance TR ₂ , and a signal outputted from the overdrive circuit becomes a signal relating to the overdrive voltage | V ₃ |. Here, as these signals, voltages applied to liquid crystal elements (| V ₁ |, | V ₂ |
, | V ₃ |), or a digital signal for applying a voltage to be applied to the liquid crystal element. Here, the signal related to the overdrive circuit is described as a digital signal.

First, the overall configuration of the overdrive circuit will be described with reference to FIG. Here, as a signal for controlling the overdrive voltage, the input image signal 301
Use 01a and 30101b. As a result of processing these signals, it is assumed that an output image signal 30104 is output as a signal giving an overdrive voltage.

Here, the voltages │V ₁ │ and │V ₂ │ giving desired transmittances TR ₁ and TR ₂ are
The input image signals 30101 a and 30101 b are also preferably image signals in adjacent frames, since they are image signals in adjacent frames. In order to obtain such a signal, the input image signal 30101a is input to the delay circuit 30102 in FIG. 80A, and the signal output as a result thereof is input image signal 3010.
It can be 1b. The delay circuit 30102 may be, for example, a memory. That is, in order to delay the input image signal 30101 a by one frame, the input image signal 30101 a is stored in the memory, and at the same time, the signal stored in the previous frame is stored as the input image signal 30101 b. By simultaneously taking out the input image signal 30101 a and the input image signal 30101 b to the correction circuit 30103, it is possible to handle image signals in adjacent frames. Then, an image signal in frames adjacent to each other is input to the correction circuit 30103, whereby an output image signal 30104 can be obtained. When a memory is used as the delay circuit 30102, a memory having a capacity capable of storing an image signal of one frame (that is, a frame memory) can be used to delay one frame. By doing this, it is possible to have a function as a delay circuit without excess or deficiency of memory capacity.

Next, the delay circuit 30102 configured mainly for reducing the memory capacity will be described. By using such a circuit as the delay circuit 30102, the memory capacity can be reduced, so that the manufacturing cost can be reduced.

Specifically, a delay circuit as shown in FIG. 80B can be used as the delay circuit 30102 having such characteristics. The delay circuit 30102 illustrated in (B) of FIG. 80 includes an encoder 30105, a memory 30106, and a decoder 30107.

The operation of the delay circuit 30102 shown in (B) of FIG. 80 is as follows. First, before storing the input image signal 30101a in the memory 30106, the encoder 3010
5 performs compression processing. This can reduce the size of data to be stored in the memory 30106. As a result, since the memory capacity can be reduced, the manufacturing cost can be reduced. Then, the image signal subjected to the compression processing is sent to the decoder 30107 where the expansion processing is performed. By this, the encoder 30105
Can restore the previous signal that has been compressed. Where the encoder 3010
The compression and decompression process performed by the V.5 and decoder 30107 may be a reversible process. By doing this, since the image signal does not deteriorate even after the compression and expansion processing is performed, the memory capacity can be reduced without degrading the quality of the image finally displayed on the device. Furthermore, the compression and decompression processing performed by the encoder 30105 and the decoder 30107 may be irreversible processing. By so doing, the size of the data of the image signal after compression can be made very small, so the memory capacity can be greatly reduced.

Note that various methods other than those described above can be used as a method for reducing the memory capacity. Instead of compressing the image by the encoder, reduce the color information of the image signal (for example, reduce color from 260,000 colors to 65,000 colors), or reduce the number of data (decrease the resolution), etc. Methods can be used.

Next, specific examples of the correction circuit 30103 will be described with reference to (C) to (E) of FIG. The correction circuit 30103 is a circuit for outputting an output image signal of a certain value from two input image signals. Here, when the relationship between the two input image signals and the output image signal is non-linear and it is difficult to obtain by a simple calculation, a lookup table (LUT) may be used as the correction circuit 30103. In the LUT, the relationship between the two input image signals and the output image signal is obtained in advance by measurement, so that output image signals corresponding to the two input image signals can be obtained by simply referring to the LUT. By using the LUT 30108 as the correction circuit 30103, the correction circuit 30103 can be realized without complicated circuit design or the like.

Here, since the LUT is one of memories, it is preferable to reduce the memory capacity as much as possible in order to reduce the manufacturing cost. A circuit shown in FIG. 80D can be considered as an example of the correction circuit 30103 for realizing it. The correction circuit 30103 shown in FIG.
Has a LUT 30109 and an adder 30110. The LUT 30109 stores difference data of the input image signal 30101 a and the output image signal 30104 to be output. That is, corresponding difference data is extracted from the LUT 30109 from the input image signal 30101 a and the input image signal 30101 b, and the extracted difference data and the input image signal 30 are extracted.
An output image signal 30104 can be obtained by adding 101 a by the adder 30110. Note that, by using data stored in the LUT 30109 as difference data, L
The memory capacity of UT can be reduced. Because the output image signal 30104 as it is
This is because, since the differential data has a smaller data size than the differential data, the memory capacity required for the LUT 30109 can be reduced.

Furthermore, if the output image signal can be obtained by a simple operation such as arithmetic operation of two input image signals, it can be realized by a combination of simple circuits such as an adder, a subtractor, and a multiplier.
As a result, it is not necessary to use a LUT, and the manufacturing cost can be significantly reduced.
As such a circuit, a circuit shown in FIG. 80E can be mentioned. Figure 80 (
The correction circuit 30103 shown in E) includes a subtractor 30111, a multiplier 30112, and an adder 3
And 0113. First, the difference between the input image signal 30101 a and the input image signal 30101 b is obtained by the subtractor 30111. Thereafter, a multiplier 30112 multiplies the difference value by an appropriate coefficient. Then, the adder 30113 can add the difference value obtained by multiplying the input image signal 30101 a by an appropriate coefficient to obtain the output image signal 30104. By using such a circuit, it is not necessary to use a LUT, and the manufacturing cost can be significantly reduced.

Note that using a correction circuit 30103 shown in (E) of FIG. 80 under certain conditions can prevent the output of an inappropriate output image signal 30104. The conditions include an output image signal 30104 for providing an overdrive voltage and an input image signal 30101.
The difference between a and the input image signal 30101 b has linearity. Then, the slope of this linearity is taken as a coefficient to be multiplied by the multiplier 30112. That is, it is preferable to use the correction circuit 30103 shown in (E) of FIG. 80 for a liquid crystal element having such a property. As a liquid crystal element having such a property, an IPS mode liquid crystal element having a small dependency of response speed on gradation can be mentioned. Thus, for example, by using the correction circuit 30103 shown in (E) of FIG. 80 for the liquid crystal element in IPS mode, the manufacturing cost can be significantly reduced.
In addition, an overdrive circuit can be obtained which can prevent the output of an inappropriate output image signal 30104.

Note that functions equivalent to those of the circuits shown in (A) to (E) of FIG. 80 may be realized by software processing. The memory used for the delay circuit may be another memory included in the liquid crystal display device, a memory included in an apparatus on the side of sending out an image to be displayed on the liquid crystal display (for example, a video card etc. included in a personal computer or a similar device). It can be diverted. By this, not only the manufacturing cost can be reduced, but also the user can select the strength of overdrive, the condition to use, etc. according to the preference.

Next, driving for operating the potential of the common line will be described with reference to FIG. Figure 81 (
A) shows a plurality of pixel circuits when one common line is disposed for one scanning line in a display device using a display element having a capacitive property such as a liquid crystal element FIG. The pixel circuit illustrated in FIG. 81A includes a transistor 30201, an auxiliary capacitor 30202, a display element 30203, a video signal line 30204, a scan line 30205, and a common line 30206.

The gate electrode of the transistor 30201 is electrically connected to the scan line 30205, one of the source electrode and the drain electrode of the transistor 30201 is electrically connected to the video signal line 30204, and the other of the source electrode and the drain electrode of the transistor 30201 is Are electrically connected to one electrode of the auxiliary capacitance 30202 and one electrode of the display element 30203.
The other electrode of the auxiliary capacitance 30202 is electrically connected to the common line 30206.

First, since the transistor 30201 is turned on in the pixel selected by the scanning line 30205, the display element 30203 and the storage capacitor 3 are each connected through the video signal line 30204.
A voltage corresponding to the video signal is applied to 0202. At this time, the video signal is the common line 30.
If the lowest gray level is to be displayed for all pixels connected to 206, or if the highest gray level is to be displayed for all pixels connected to the common line 30206, the pixel It is not necessary to write a video signal through the video signal line 30204 respectively.
By changing the potential of the common line 30206 instead of writing the video signal through the video signal line 30204, the voltage applied to the display element 30203 can be changed.

Next, FIG. 81B shows a display device using a display element having a capacitive property such as a liquid crystal element, in which two common lines are provided for one scanning line, It is a figure showing a plurality of pixel circuits. The pixel circuit illustrated in FIG. 81B includes a transistor 30211, an auxiliary capacitor 30212, a display element 30213, a video signal line 30214, a scan line 30215, a first common line 30216, and a second common line 30217. .

The gate electrode of the transistor 30211 is electrically connected to the scan line 30215, one of the source electrode and the drain electrode of the transistor 30211 is electrically connected to the video signal line 30214, and the other of the source electrode and the drain electrode of the transistor 30211 is Are electrically connected to one electrode of the storage capacitor 30212 and one electrode of the display element 30213.
Further, the other electrode of the auxiliary capacitance 30212 is electrically connected to the first common line 30216.
Further, in the pixel adjacent to the pixel, the other electrode of the storage capacitor 30212 is electrically connected to the second common line 30217.

Since there are few pixels electrically connected to one common line in the pixel circuit shown in FIG. 81B, the first common line 30216 can be used instead of writing a video signal through the video signal line 30214. Alternatively, by moving the potential of the second common line 30217, the frequency at which the voltage applied to the display element 30213 can be changed is significantly increased. In addition, source inversion drive or dot inversion drive is possible. The source inversion drive or the dot inversion drive can suppress the flicker while improving the reliability of the element.

Next, a scanning backlight will be described with reference to FIG. FIG. 82A shows a scanning backlight in which cold cathode tubes are juxtaposed. The scanning backlight shown in FIG. 82A includes a diffusion plate 30301 and N cold cathode fluorescent lamps 30302-1 to 30302-N. By arranging N cold cathode fluorescent tubes 30302-1 to 30302-N in parallel behind diffusion plate 30301, N cold cathode fluorescent lamps 30302-1 to 30302 -N scan with their brightness changed. Can.

The change in luminance of each cold cathode tube at the time of scanning will be described with reference to FIG. First, the luminance of the cold cathode tube 30302-1 is changed for a fixed time. And then, cold cathode tube 30
The brightness of the cold cathode fluorescent tube 30302-2 arranged next to 302-1 is changed by the same time. Thus, the luminance is sequentially changed from the cold cathode tubes 30302-1 to 30302-N. In addition, in (C) of FIG. 82, the luminance to be changed for a fixed time is set to be smaller than the original luminance, but may be larger than the original luminance. Also, a cold cathode tube 30302-1 to 3030
Although the scanning is performed up to 2-N, the cold cathode tubes 30302 -N to 30302-1 may be scanned in the reverse direction.

By driving as shown in FIG. 82, the average luminance of the backlight can be reduced. Therefore, the power consumption of the backlight which occupies most of the power consumption of the liquid crystal display device can be reduced.

Note that an LED may be used as a light source of the scanning backlight. The scanning backlight in that case is as shown in FIG. The scanning backlight shown in FIG. 82B includes a diffusion plate 30311 and light sources 30312-1 to 30312 -N in which LEDs are juxtaposed. When an LED is used as a light source for a scanning backlight, the backlight is thin,
There is an advantage that it can be lightened. In addition, there is an advantage that the color reproduction range can be expanded. Furthermore, LEs juxtaposed to each of light sources 30312-1 to 30312-N juxtaposed with LEDs
Since D can be similarly scanned, it can also be a point scanning type backlight.
If the point scanning type is used, the image quality of the moving image can be further improved.

In addition, also when LED is used as a light source of a backlight, as shown to (C) of FIG. 82, it can drive by changing a brightness | luminance.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 9)
Various liquid crystal modes will be described in this embodiment.

First, various liquid crystal modes will be described using sectional views.

134 (A) and (B) show schematic views of a cross section of the TN mode.

A liquid crystal layer 50100 is sandwiched between a first substrate 50101 and a second substrate 50102 which are disposed to face each other. The first electrode 501 is formed on the top surface of the first substrate 50101.
05 is formed. A second electrode 50106 is formed on the top surface of the second substrate 50102. A first polarizing plate 50103 is disposed on the opposite side of the first substrate 50101 to the liquid crystal layer. A second polarizing plate 50104 is disposed on the opposite side of the second substrate 50102 to the liquid crystal layer. Note that the first polarizing plate 50103 and the second polarizing plate 50104 are arranged to be in a cross nicol state.

The first polarizing plate 50103 may be disposed on the top surface of the first substrate 50101. The second polarizing plate 50104 may be disposed on the top surface of the second substrate 50102.

At least one (or both) of the first electrode 50105 and the second electrode 50106 may have a light-transmitting property (transmissive or reflective). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 134A is a schematic view of a cross section in the case where a voltage is applied to the first electrode 50105 and the second electrode 50106 (referred to as a vertical electric field mode). Since liquid crystal molecules are aligned vertically, light from the backlight is not affected by birefringence of the liquid crystal molecules. And, the first polarizing plate 5
Since the 0103 and the second polarizing plate 50104 are arranged to be in a crossed nicol,
Light from the backlight can not pass through the substrate. Therefore, black display is performed.

Note that by controlling the voltage applied to the first electrode 50105 and the second electrode 50106, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 134B is a schematic view of a cross section when voltage is not applied to the first electrode 50105 and the second electrode 50106. Since liquid crystal molecules are aligned horizontally and rotated in a plane, light from the backlight is affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50103 and the second polarizing plate 50104 are arranged in cross nicol, light from the backlight passes through the substrate. Therefore, white display is performed. It is a so-called normally white mode.

The liquid crystal display device having the structure shown in FIGS. 134A and 134B can perform full color display by providing a color filter. The color filter is a first substrate 50101.
It can be provided on the side or the second substrate 50102 side.

The liquid crystal material used in the TN mode may be a known one.

FIGS. 135A and 135B are schematic views of a cross section of the VA mode. The VA mode is a mode in which liquid crystal molecules are oriented perpendicular to the substrate when no electric field is applied.

A liquid crystal layer 50200 is sandwiched between a first substrate 50201 and a second substrate 50202 which are disposed to face each other. The first electrode 502 is formed on the upper surface of the first substrate 50201.
05 is formed. A second electrode 50206 is formed on the top surface of the second substrate 50202. A first polarizing plate 50203 is disposed on the opposite side of the first substrate 50201 to the liquid crystal layer. A second polarizing plate 50204 is disposed on the opposite side of the second substrate 50202 to the liquid crystal layer. Note that the first polarizing plate 50203 and the second polarizing plate 50204 are arranged to be in a cross nicol state.

The first polarizing plate 50203 may be disposed on the top surface of the first substrate 50201. The second polarizing plate 50204 may be disposed on the top surface of the second substrate 50202.

It is sufficient that at least one (or both) of the first electrode 50205 and the second electrode 50206 have translucency (transmissive or reflective). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 135A is a schematic view of a cross section when voltage is applied to the first electrode 50205 and the second electrode 50206 (referred to as a vertical electric field mode). Since liquid crystal molecules are aligned horizontally, light from the backlight is affected by birefringence of the liquid crystal molecules. And, the first polarizing plate 50
The light from the backlight passes through the substrate because the second polarizing plate 50204 and the second polarizing plate 50204 are arranged in cross nicol. Therefore, white display is performed.

Note that by controlling the voltage applied to the first electrode 50205 and the second electrode 50206, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 135B is a schematic view of a cross section when voltage is not applied to the first electrode 50205 and the second electrode 50206. Since liquid crystal molecules are aligned vertically, light from the backlight is not affected by birefringence of the liquid crystal molecules. And, the first polarizing plate 50203 and the second
The light from the backlight does not pass through the substrate because the polarizing plate 50204 and the polarizing plate 50204 of FIG. Therefore, black display is performed. It is a so-called normally black mode.

A liquid crystal display device having a structure shown in FIGS. 135A and 135B can perform full color display by providing a color filter. The color filter is a first substrate 50201
It can be provided on the side or the second substrate 50202 side.

The liquid crystal material used for the VA mode may be a known one.

135 (C) and (D) show schematic views of a cross section of the MVA mode. The MVA mode is a method of compensating each other for the viewing angle dependency of each part.

A liquid crystal layer 50210 is sandwiched between a first substrate 50211 and a second substrate 50212 which are disposed to face each other. The first electrode 502 is formed on the top surface of the first substrate 50211.
15 is formed. A second electrode 50216 is formed on the top surface of the second substrate 50212. First protrusions 502117 are formed on the first electrode 50215 for orientation control. A second protrusion 502118 is formed on the second electrode 50216 for orientation control. The first polarizing plate 50213 is provided on the opposite side of the first substrate 50211 to the liquid crystal layer.
Is arranged. The second polarizing plate 5021 is disposed on the side opposite to the liquid crystal layer of the second substrate 50212.
Four are arranged. Note that the first polarizing plate 50213 and the second polarizing plate 50214 are arranged to be in a cross nicol state.

The first polarizing plate 50213 may be disposed on the top surface of the first substrate 50211. The second polarizing plate 50214 may be disposed on the top surface of the second substrate 50212.

At least one (or both) of the first electrode 50215 and the second electrode 50216 may have a light-transmitting property (transmissive or reflective). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 135C is a schematic view of a cross section in the case where a voltage is applied to the first electrode 50215 and the second electrode 50216 (referred to as a vertical electric field mode). Liquid crystal molecules have a first protrusion 502117
The light from the backlight is affected by the birefringence of liquid crystal molecules because the light is inclined to the second protrusion 502118 and aligned. Then, since the first polarizing plate 50213 and the second polarizing plate 50214 are arranged to be in a cross nicol state, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that by controlling the voltage applied to the first electrode 50215 and the second electrode 50216, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 135D is a schematic view of a cross section when voltage is not applied to the first electrode 50215 and the second electrode 50216. Since liquid crystal molecules are aligned vertically, light from the backlight is not affected by birefringence of the liquid crystal molecules. The first polarizer 50213 and the second
The light from the backlight does not pass through the substrate because the polarizing plate 50214 and the second polarizing plate 50214 are arranged to be in a cross nicol state. Therefore, black display is performed. It is a so-called normally black mode.

The liquid crystal display device having the structure shown in FIGS. 135C and 135D can perform full color display by providing a color filter. The color filter includes a first substrate 50211
It can be provided on the side or the second substrate 50212 side.

The liquid crystal material used in the MVA mode may be a known one.

FIGS. 136A and 136B show schematic views of a cross section of the OCB mode. In the OCB mode, the alignment of the liquid crystal molecules in the liquid crystal layer optically forms a compensation state, and thus the viewing angle dependency is small. The state of this liquid crystal molecule is called bend alignment.

A liquid crystal layer 50300 is sandwiched between a first substrate 50301 and a second substrate 50302 which are disposed to face each other. The first electrode 503 is formed on the upper surface of the first substrate 50301.
05 is formed. A second electrode 50306 is formed on the top surface of the second substrate 50302. A first polarizing plate 50303 is disposed on the opposite side of the first substrate 50301 to the liquid crystal layer. A second polarizing plate 50304 is disposed on the side of the second substrate 50302 opposite to the liquid crystal layer. Note that the first polarizing plate 50303 and the second polarizing plate 50304 are arranged to be in a cross nicol state.

The first polarizing plate 50303 may be disposed on the top surface of the first substrate 50301. The second polarizing plate 50304 may be disposed on the top surface of the second substrate 50302.

It is sufficient that at least one (or both) of the first electrode 50305 and the second electrode 50306 have translucency (transmission type or reflection type). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 136A is a schematic view of a cross section in the case where a voltage is applied to the first electrode 50305 and the second electrode 50306 (referred to as a vertical electric field mode). Since liquid crystal molecules are aligned vertically, light from the backlight is not affected by birefringence of the liquid crystal molecules. And, the first polarizing plate 5
Because 0303 and the second polarizing plate 50304 are arranged to be in a crossed nicol,
Light from the backlight does not pass through the substrate. Therefore, black display is performed.

Note that by controlling the voltage applied to the first electrode 50305 and the second electrode 50306, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 136B is a schematic view of a cross section when voltage is not applied to the first electrode 50305 and the second electrode 50306. Since liquid crystal molecules are in a bend alignment state, light from the backlight is affected by birefringence of the liquid crystal molecules. And, the first polarizing plate 50303 and the second
The light from the backlight passes through the substrate because the polarizing plate 50304 is disposed so as to be in a cross nicol state. Therefore, white display is performed. It is a so-called normally white mode.

The liquid crystal display device having the structure shown in FIGS. 136A and 136B can perform full color display by providing a color filter. The color filter is a first substrate 50301
It can be provided on the side or the second substrate 50302 side.

The liquid crystal material used in the OCB mode may be a known one.

FIGS. 136 (C) and (D) show schematic views of a cross section in the FLC mode or the AFLC mode.

A liquid crystal layer 50310 is sandwiched between a first substrate 50311 and a second substrate 50312 which are disposed to face each other. The first electrode 503 is formed on the top surface of the first substrate 50311.
15 is formed. A second electrode 50316 is formed on the top surface of the second substrate 50312. A first polarizing plate 50313 is disposed on the opposite side of the first substrate 50311 to the liquid crystal layer. A second polarizing plate 50314 is disposed on the opposite side of the second substrate 50312 to the liquid crystal layer. Note that the first polarizing plate 50313 and the second polarizing plate 50314 are arranged to be in a cross nicol state.

The first polarizing plate 50313 may be disposed on the top surface of the first substrate 50311. The second polarizing plate 50314 may be disposed on the top surface of the second substrate 50312.

At least one (or both) of the first electrode 50315 and the second electrode 50316 may have a light-transmitting property (transmissive or reflective). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 136C is a schematic view of a cross section in the case where a voltage is applied to the first electrode 50315 and the second electrode 50316 (referred to as a vertical electric field mode). Since liquid crystal molecules are aligned horizontally in a direction shifted from the rubbing direction, light from the backlight is affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50313 and the second polarizing plate 50314 are arranged to be in a crossed nicol state, light from the backlight passes through the substrate. Therefore,
White display is performed.

Note that by controlling the voltage applied to the first electrode 50315 and the second electrode 50316, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 136D is a schematic view of a cross section when voltage is not applied to the first electrode 50315 and the second electrode 50316. Since liquid crystal molecules are aligned horizontally along the rubbing direction, light from the backlight is not affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50313 and the second polarizing plate 50314 are arranged to be in a crossed nicol state, light from the backlight does not pass through the substrate. Therefore, black display is performed. It is a so-called normally black mode.

The liquid crystal display device having the structure shown in FIGS. 136C and 136D can perform full color display by providing a color filter. The color filter is a first substrate 50311.
It can be provided on the side or the second substrate 50312 side.

Known liquid crystal materials may be used for the FLC mode or the AFLC mode.

FIGS. 137 (A) and (B) show schematic views of a cross section of the IPS mode. The IPS mode is a mode in which liquid crystal molecules are always rotated in a plane with respect to the substrate because the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, and the electrodes are only on one substrate side. Use the horizontal electric field method provided.

A liquid crystal layer 50400 is sandwiched between a first substrate 50401 and a second substrate 50402 which are disposed to face each other. The first electrode 504 is formed on the top surface of the first substrate 50401.
A 05 and a second electrode 50406 are formed. A first polarizing plate 50403 is disposed on the opposite side of the first substrate 50401 to the liquid crystal layer. A second polarizing plate 50404 is disposed on the side of the second substrate 50402 opposite to the liquid crystal layer. Note that the first polarizing plate 50403 and the second polarizing plate 50404 are arranged in cross nicol.

The first polarizing plate 50403 may be disposed on the top surface of the first substrate 50401. The second polarizing plate 50404 may be disposed on the top surface of the second substrate 50402.

It is sufficient that at least one (or both) of the first electrode 50405 and the second electrode 50406 have translucency (transmission type or reflection type). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 137A is a schematic view of a cross section in the case where a voltage is applied to the first electrode 50405 and the second electrode 50406 (referred to as a vertical electric field mode). Since liquid crystal molecules are aligned along electric lines of force that deviate from the rubbing direction, light from the backlight is affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged in cross nicol, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that by controlling the voltage applied to the first electrode 50405 and the second electrode 50406, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 137B is a schematic view of a cross section when voltage is not applied to the first electrode 50405 and the second electrode 50406. Since liquid crystal molecules are aligned horizontally along the rubbing direction, light from the backlight is not affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged to be in a crossed nicol, light from the backlight does not pass through the substrate. Therefore, black display is performed. It is a so-called normally black mode.

The liquid crystal display device having the structure shown in FIGS. 137A and 137B can perform full color display by providing a color filter. The color filter is a first substrate 50401
It can be provided on the side or the second substrate 50402 side.

The liquid crystal material used in the IPS mode may be a known one.

137 (C) and (D) show schematic views of a cross section of the FFS mode. The FFS mode is a mode in which liquid crystal molecules are always rotated in a plane with respect to the substrate because the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, and the electrodes are only on one substrate side. Use the horizontal electric field method provided.

A liquid crystal layer 50410 is sandwiched between a first substrate 50411 and a second substrate 50412 which are disposed to face each other. The second electrode 504 is formed on the top surface of the first substrate 50411.
Sixteen are formed. An insulating film 50417 is formed on the top surface of the second electrode 50416. A second electrode 50416 is formed over the insulating film 50417. A first polarizing plate 50413 is disposed on the opposite side of the first substrate 50411 to the liquid crystal layer. A second polarizing plate 50414 is disposed on the opposite side of the second substrate 50412 to the liquid crystal layer. Note that
The first polarizing plate 50413 and the second polarizing plate 50414 are arranged in cross nicol.

The first polarizing plate 50413 may be disposed on the top surface of the first substrate 50411. The second polarizing plate 50414 may be disposed on the top surface of the second substrate 50412.

At least one (or both) of the first electrode 50415 and the second electrode 50416 may have a light-transmitting property (transmissive or reflective). Alternatively, both electrodes may be translucent, and part of one of the electrodes may be reflective (semi-transmissive).

FIG. 137C is a schematic view of a cross section in the case where voltage is applied to the first electrode 50415 and the second electrode 50416 (referred to as a vertical electric field mode). Since liquid crystal molecules are aligned along electric lines of force that deviate from the rubbing direction, light from the backlight is affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged to be in a cross nicol state, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that by controlling the voltage applied to the first electrode 50415 and the second electrode 50416, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

FIG. 137D is a schematic view of a cross section when voltage is not applied to the first electrode 50415 and the second electrode 50416. Since liquid crystal molecules are aligned horizontally along the rubbing direction, light from the backlight is not affected by birefringence of the liquid crystal molecules. Then, since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged to be in a crossed nicol state, light from the backlight does not pass through the substrate. Therefore, black display is performed. It is a so-called normally black mode.

A liquid crystal display device having a structure shown in FIGS. 137C and 137D can perform full color display by providing a color filter. The color filter is a first substrate 50411.
It can be provided on the side or the second substrate 50412 side.

The liquid crystal material used in the FFS mode may be a known one.

Next, various liquid crystal modes will be described using a top view.

FIG. 138 shows a top view of a pixel portion to which the MVA mode is applied. The MVA mode is a method of compensating each other for the viewing angle dependency of each part.

138 shows the first pixel electrode 50501 and the second pixel electrode (50502a, 50502b).
, 50502 c), and projections 50503. The first pixel electrode 50501 is
It is formed on the entire surface of the opposing substrate. The second pixel electrode (50
502a, 50502b, 50502c) are formed. The second pixel electrode (5
In order to correspond to 0502a, 50502b, 50502c), the first pixel electrode 5050 is used.
A second pixel electrode (50502a, 50502b, 50502c) is formed on the pixel electrode 1.

The openings of the second pixel electrodes (50502a, 50502b, 50502c) function like protrusions.

First pixel electrode 50501 and second pixel electrode (50502a, 50502b, 5050)
When a voltage is applied to the second pixel electrode (referred to as a vertical electric field mode), the liquid
It will be in the state which fell down with respect to the opening part of 502a, 50502b, 50502c, and protrusion 50503 and it lined up. When a pair of polarizing plates are arranged to be crossed nicols,
White light is displayed because the light from the backlight passes through the substrate.

Note that the first pixel electrode 50501 and the second pixel electrode (50502 a, 50502 b, 5
By controlling the voltage applied to 0502 c), the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

First pixel electrode 50501 and second pixel electrode (50502a, 50502b, 5050)
When no voltage is applied to 2c), the liquid crystal molecules are aligned vertically. When the pair of polarizing plates is arranged to be in a crossed nicol, light from the backlight does not pass through the panel, so black display is performed. It is a so-called, normally black mode.

The liquid crystal material used in the MVA mode may be a known one.

FIGS. 139 (A), (B), (C) and (D) show top views of the pixel portion to which the IPS mode is applied. The IPS mode is a mode in which liquid crystal molecules are always rotated in a plane with respect to the substrate because the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, and the electrodes are only on one substrate side. Use the horizontal electric field method provided.

In the IPS mode, the pair of electrodes are formed to have different shapes.

FIG. 139A shows a first pixel electrode 50601 and a second pixel electrode 50602. The first pixel electrode 50601 and the second pixel electrode 50602 have a wavy shape.

FIG. 139B shows the first pixel electrode 50611 and the second pixel electrode 50612. The first pixel electrode 50611 and the second pixel electrode 50612 have a shape having concentric openings.

FIG. 139C illustrates the first pixel electrode 50631 and the second pixel electrode 50632. The first pixel electrode 50631 and the second pixel electrode 50632 have a comb-like shape and are partially overlapped

FIG. 139D illustrates the first pixel electrode 50641 and the second pixel electrode 50642. The first pixel electrode 50641 and the second pixel electrode 50642 have a comb shape and have a shape in which the electrodes are engaged with each other.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50
In the case where a voltage is applied to 602, 50612, 50622, and 50632 (referred to as a vertical electric field mode), liquid crystal molecules are aligned along electric lines of force that deviate from the rubbing direction. When the pair of polarizing plates is arranged to be in a crossed nicol, light from the backlight passes through the substrate, so white display is performed.

The state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50601, 50611, 50621, 50631) and the second electrode (50602, 50612, 50622, 50632). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50
In the case where no voltage is applied to 602, 50612, 50622, 50632), liquid crystal molecules are aligned horizontally along the rubbing direction. When the pair of polarizing plates is arranged to be in a crossed nicol, light from the backlight does not pass through the substrate, so black display is performed. It is a normally black mode to say.

The liquid crystal material used in the IPS mode may be a known one.

FIGS. 140 (A), (B), (C), and (D) show top views of the pixel portion to which the FFS mode is applied. The FFS mode is a mode in which liquid crystal molecules are always rotated in a plane with respect to the substrate because the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, and the electrodes are only on one substrate side. Use the horizontal electric field method provided.

In the FFS mode, the first electrode is formed in various shapes on the top surface of the second electrode.

FIG. 140A shows a first pixel electrode 50701 and a second pixel electrode 50702. The first pixel electrode 50701 is in the shape of a curve. Second pixel electrode 5070
2 may not be patterned.

FIG. 140B shows the first pixel electrode 50711 and the second pixel electrode 50712. The first pixel electrode 50711 has a concentric shape. The second pixel electrode 50712 may not be patterned.

FIG. 140C illustrates the first pixel electrode 50731 and the second pixel electrode 50732. The first pixel electrode 50731 has a comb shape and has a shape in which the electrodes are engaged with each other. Second
The pixel electrode 50732 may not be patterned.

FIG. 140D illustrates a first pixel electrode 50741 and a second pixel electrode 50742. The first pixel electrode 50741 has a comb shape. The second pixel electrode 50742 is
It does not have to be patterned.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50
When a voltage is applied to the electrodes 702, 50712, 50722, 50732 (referred to as a vertical electric field mode), liquid crystal molecules are aligned along electric lines of force that deviate from the rubbing direction. When the pair of polarizing plates is arranged to be in a crossed nicol, light from the backlight passes through the substrate, so white display is performed.

It is possible to control the state of liquid crystal molecules by controlling the voltage applied to the first electrode (50701, 50711, 50721, 50731) and the second electrode (50702, 50712, 50722, 50732) is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, predetermined image display can be performed.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50
In the case where no voltage is applied to 702, 50712, 50722, 50732), liquid crystal molecules are aligned horizontally along the rubbing direction. When the pair of polarizing plates is arranged to be in a crossed nicol, light from the backlight does not pass through the substrate, so black display is performed. It is a normally black mode to say.

The liquid crystal material used in the IPS mode may be a known one.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Tenth Embodiment
In this embodiment mode, a pixel structure of a display device is described. In particular, the pixel structure of the liquid crystal display device is described.

A pixel structure in the case where each liquid crystal mode and a transistor are combined is described with reference to a cross-sectional view of the pixel.

Note that as the transistor, a thin film transistor (TFT) having a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystalline or semi-amorphous) silicon, or the like can be used.

Note that a top gate type, a bottom gate type, or the like can be used as a structure of the transistor. Note that as the bottom gate transistor, a channel etch type or a channel protective type can be used.

FIG. 85 is an example of a cross-sectional view of a pixel in the case where a TN method and a transistor are combined.
By applying the pixel structure shown in FIG. 85 to a liquid crystal display device, the liquid crystal display device can be manufactured inexpensively.

The features of the pixel structure shown in FIG. 85 will be described. The liquid crystal molecules 10118 shown in FIG.
It is an elongated molecule with a major axis and a minor axis. In order to indicate the orientation of the liquid crystal molecule 10118, the length is shown in FIG. That is, liquid crystal molecules 1011 expressed long
It is assumed that the direction of the major axis of 8 is parallel to the paper surface, and the direction of the major axis is closer to the normal direction of the paper surface as the liquid crystal molecule 10118 expressed shorter. That is, in the liquid crystal molecules 10118 shown in FIG. 85, the direction of the major axis is different by 90 degrees between the one close to the first substrate 10101 and the one close to the second substrate 10116, and Liquid crystal molecules 101
The direction of the major axis of 18 is such as to connect these smoothly. That is, the liquid crystal molecules 10118 shown in FIG. 85 are 90 between the first substrate 10101 and the second substrate 10116.
It is in an oriented state as if it is twisted by degrees.

Note that a bottom gate transistor using an amorphous semiconductor is used as the transistor. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured inexpensively using a substrate with a large area.

The liquid crystal display device has a main part for displaying an image, which is called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates with a gap of several micrometers.
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 85, the two substrates are
A first substrate 10101 and a second substrate 10116 are provided. A transistor and a pixel electrode are formed on the first substrate. A light shielding film 10114 and a color filter 101 are formed on the second substrate.
A fourth conductive layer 10113, a spacer 10117, and a second alignment film 10112 are formed.

Note that the light shielding film 10114 may not be formed on the second substrate 10116. Shading film 1
In the case of not forming [0114], the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. Meanwhile, the light shielding film 1011
In the case of forming 4, it is possible to obtain a display device with less light leakage at the time of black display.

Note that the color filter 10115 may not be formed on the second substrate 10116.
When the color filter 10115 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10115 is not formed, a display device capable of performing color display by field sequential driving can be obtained. Meanwhile, the color filter 1011
In the case of forming 5, a display device capable of color display can be obtained.

Instead of the spacers 10117, spherical spacers may be dispersed. In the case of dispersing spherical spacers, the number of steps is reduced, and thus the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, in the case of forming the spacer 10117, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

A process to be performed on the first substrate 10101 will be described.

First, the first insulating film 10102 is formed over the first substrate 10101 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10102 may not be formed. The first insulating film 10102 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10103 is formed on the first insulating film 10102 by photolithography,
It is formed by a laser direct writing method or an inkjet method.

Next, a second insulating film 10104 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10104, impurities from the substrate affect the semiconductor layer,
It has a function to prevent the change of the property of the transistor.

Next, a first semiconductor layer 10105 and a second semiconductor layer 10106 are formed. Note that the first semiconductor layer 10105 and the second semiconductor layer 10106 are continuously formed, and their shapes are processed at the same time.

Next, a second conductive layer 10107 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method which is performed when the shape of the second conductive layer 10107 is processed. Note that
As the second conductive layer 10107, a material having transparency or a material having reflectivity may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10106 is etched using the second conductive layer 10107 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10107. Then, a portion of the first conductive layer 10103 from which the second semiconductor layer 10106 is removed becomes a transistor and a channel region. By this, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10108 is formed, and a contact hole is selectively formed in the third insulating film 10108. Note that a contact hole may be formed in the second insulating film 10104 at the same time as the contact hole is formed in the third insulating film 10108. Note that
The surface of the third insulating film 10108 is preferably as flat as possible. The reason is that the alignment of the liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, a third conductive layer 10109 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a first alignment film 10110 is formed. After forming the first alignment film 10110,
Rubbing may be performed to control the alignment of liquid crystal molecules. Rubbing is a step of applying streaks to the alignment film by rubbing the alignment film with a cloth. By performing the rubbing, the alignment film can have alignment.

The first substrate 10101 manufactured as described above, the light shielding film 10114, and the color filter 10
A sealing material is attached to the second substrate 10116 on which the 115, the fourth conductive layer 10113, the spacer 10117, and the second alignment film 10112 are formed with a gap of several micrometers. Then, a liquid crystal material is injected between the two substrates. Note that in the TN method, the fourth conductive layer 10113 is formed over the entire surface of the second substrate 10116.

FIG. 86 (A) shows the MVA (Multi-domain Vertical Alignm)
3 is an example of a cross-sectional view of a pixel in the case of combining the (ent) method and a transistor. Figure 86
By applying the pixel structure shown in (A) to a liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle, a high response speed, and a large contrast.

Features of the pixel structure shown in FIG. 86A will be described. The features of the pixel structure of the MVA liquid crystal panel will be described. Liquid crystal molecules 10218 shown in FIG. 86A are elongated molecules having a major axis and a minor axis. In order to indicate the direction of the liquid crystal molecules 10218, the length is shown in FIG. 86 (A). That is, the liquid crystal molecule 10218 expressed long is
It is assumed that the direction of the major axis is parallel to the paper surface, and the direction of the major axis of the liquid crystal molecule 10218 expressed shorter is closer to the normal direction of the paper surface. That is, the liquid crystal molecules 10218 shown in FIG. 86A are aligned such that the direction of the major axis is in the normal direction of the alignment film. Therefore, the liquid crystal molecules 10218 in a portion where the alignment control protrusion 10219 is present are the alignment control protrusion 102.
Aligned radially around 19 By this state, a liquid crystal display device having a large viewing angle can be obtained.

Note that a bottom gate transistor using an amorphous semiconductor is used as the transistor. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured inexpensively using a substrate with a large area.

The liquid crystal display device has a main part for displaying an image, which is called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates with a gap of several micrometers.
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 86A, the two substrates are a first substrate 10201 and a second substrate 10216. A transistor and a pixel electrode are formed on the first substrate. The second substrate includes a light shielding film 10214, a color filter 10215, a fourth conductive layer 10213, a spacer 10217, and a second alignment film 1021.
2 and an alignment control protrusion 10219 are formed.

Note that the light shielding film 10214 may not be formed on the second substrate 10216. Shading film 1
In the case where 0214 is not formed, the number of steps is reduced, whereby the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1021
In the case of forming 4, it is possible to obtain a display device with less light leakage at the time of black display.

Note that the color filter 10215 may not be formed on the second substrate 10216.
When the color filter 10215 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10215 is not manufactured, a display device capable of performing color display by field sequential driving can be obtained. Meanwhile, the color filter 1021
In the case of forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed on the second substrate 10216 instead of the spacers 10217. In the case of dispersing spherical spacers, the number of steps is reduced, and thus the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case of forming the spacer 10217, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with few display unevenness can be obtained.

A process to be performed on the first substrate 10201 will be described.

First, the first insulating film 10202 is formed over the first substrate 10201 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10202 may not be formed. The first insulating film 10202 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, over the first insulating film 10202, a first conductive layer 10203 is formed by photolithography,
It is formed by a laser direct writing method or an inkjet method.

Next, a second insulating film 10204 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10204, impurities from the substrate affect the semiconductor layer,
It has a function to prevent the change of the property of the transistor.

Next, a first semiconductor layer 10205 and a second semiconductor layer 10206 are formed. Note that the first semiconductor layer 10205 and the second semiconductor layer 10206 are continuously formed, and their shapes are processed at the same time.

Next, a second conductive layer 10207 is formed by photolithography, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method which is performed when the shape of the second conductive layer 10207 is processed. Note that
As the second conductive layer 10207, a material having transparency or a material having reflectivity may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10206 is etched using the second conductive layer 10207 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10207. Then, a portion of the first conductive layer 10203 from which the second semiconductor layer 10206 is removed becomes a transistor and a channel region. By this, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10208 is formed, and a contact hole is selectively formed in the third insulating film 10208. Note that a contact hole may be formed in the second insulating film 10204 at the same time as the contact hole is formed in the third insulating film 10208.

Next, a third conductive layer 10209 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a first alignment film 10210 is formed. After forming the first alignment film 10210,
Rubbing may be performed to control the alignment of liquid crystal molecules. Rubbing is a step of applying streaks to the alignment film by rubbing the alignment film with a cloth. By performing the rubbing, the alignment film can have alignment.

The first substrate 10201 manufactured as described above, the light shielding film 10214, and the color filter 10
A gap of several micrometers is provided by a sealing material and the second substrate 10216 on which the 215, the fourth conductive layer 10213, the spacer 10217, and the second alignment film 10212 are manufactured is attached. Then, a liquid crystal material is injected between the two substrates. In addition, MVA
In the method, the fourth conductive layer 10213 is formed on the entire surface of the second substrate 10216.
Note that an alignment control protrusion 10219 is formed in contact with the fourth conductive layer 10213.
The shape of the alignment control protrusion 10219 is preferably a shape having a smooth curved surface.
By this, the alignment of the adjacent liquid crystal molecules 10218 becomes extremely close, so that the alignment failure can be reduced. Defects in the alignment film caused by disconnection of the alignment film can be reduced.

FIG. 86 (B) shows PVA (Paterned Vertical Alignment).
It is an example of sectional drawing of the pixel at the time of combining a system and a transistor. By applying the pixel structure shown in FIG. 86B to a liquid crystal display device, a liquid crystal display device having a large viewing angle, high response speed, and high contrast can be obtained.

The feature of the pixel structure shown in FIG. 86B will be described. Liquid crystal molecules 1 shown in FIG. 86 (B)
0248 is an elongated molecule having a major axis and a minor axis. In order to indicate the orientation of the liquid crystal molecule 10248, the length is shown in FIG. 86 (B). That is, it is assumed that the direction of the major axis of the liquid crystal molecule 10248 represented long is parallel to the paper surface, and the direction of the major axis is closer to the normal direction of the paper surface as the liquid crystal molecule 10248 represented shorter . That is, the liquid crystal molecules 10248 shown in FIG. 86B are aligned such that the direction of the major axis is in the normal direction of the alignment film. Therefore, liquid crystal molecules 10248 in a portion where the electrode notch portion 10249 exists
Are radially oriented about the boundary between the electrode notch portion 10249 and the fourth conductive layer 1023. By this state, a liquid crystal display device having a large viewing angle can be obtained.

Note that a bottom gate transistor using an amorphous semiconductor is used as the transistor. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured inexpensively using a substrate with a large area.

The liquid crystal display device has a main part for displaying an image, which is called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates with a gap of several micrometers.
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 86B, the two substrates are a first substrate 10231 and a second substrate 10246. A transistor and a pixel electrode are formed on the first substrate. As the second substrate, a light shielding film 10244, a color filter 10245, a fourth conductive layer 10243, a spacer 10247, and a second alignment film 1 are provided.
[0242] is formed.

Note that the light shielding film 10244 may not be formed on the second substrate 10246. Shading film 1
In the case where 0244 is not formed, the number of steps is reduced, whereby the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. Meanwhile, the light shielding film 1024
In the case of forming 4, it is possible to obtain a display device with less light leakage at the time of black display.

Note that the color filter 10245 may not be formed on the second substrate 10246.
When the color filter 10245 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10245 is not manufactured, a display device capable of performing color display by field sequential driving can be obtained. Meanwhile, color filter 1024
In the case of forming 5, a display device capable of color display can be obtained.

A spherical spacer may be dispersed on the second substrate 10246 instead of the spacer 10247. In the case of dispersing spherical spacers, the number of steps is reduced, and thus the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case of forming the spacer 10247, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with few display unevenness can be obtained.

A process to be performed on the first substrate 10231 will be described.

First, a first insulating film 10232 is formed over a first substrate 10231 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10232 may not be formed. The first insulating film 10232 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10233 is formed on the first insulating film 10232 by photolithography,
It is formed by a laser direct writing method or an inkjet method.

Next, a second insulating film 10234 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10234, impurities from the substrate affect the semiconductor layer,
It has a function to prevent the change of the property of the transistor.

Next, a first semiconductor layer 10235 and a second semiconductor layer 10236 are formed. Note that the first semiconductor layer 10235 and the second semiconductor layer 10236 are formed successively, and their shapes are processed at the same time.

Next, a second conductive layer 10237 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method which is performed when the shape of the second conductive layer 10237 is processed. Note that
For the second conductive layer 10237, a material having transparency or a material having reflectivity may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10236 is etched using the second conductive layer 10237 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10237. Then, a portion of the first conductive layer 10233 from which the second semiconductor layer 10236 is removed becomes a transistor and a channel region. By this, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10238 is formed, and a contact hole is selectively formed in the third insulating film 10238. Note that a contact hole may be formed in the second insulating film 10234 at the same time as the contact hole is formed in the third insulating film 10238. Note that
The surface of the third insulating film 10238 is preferably as flat as possible. The reason is that the alignment of the liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, a third conductive layer 10239 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a first alignment film 10240 is formed. After forming the first alignment film 10240,
Rubbing may be performed to control the alignment of liquid crystal molecules. Rubbing is a step of applying streaks to the alignment film by rubbing the alignment film with a cloth. By performing the rubbing, the alignment film can have alignment.

The first substrate 10231 manufactured as described above, the light shielding film 10244, and the color filter 10
A seal material makes a gap of several micrometers and is bonded to the second substrate 10246 on which the fourth conductive layer 10243, the spacer 10247, and the second alignment film 10242 are manufactured. Then, a liquid crystal material is injected between the two substrates. In addition, PVA
In the method, the fourth conductive layer 10243 is patterned and an electrode notch 10249 is formed.
Is formed. Although the shape of the electrode notch 10249 is not limited, it is preferable that the shape is a combination of a plurality of rectangles having different directions. By this, a plurality of regions with different orientations can be formed, so that a liquid crystal display device with a wide viewing angle can be obtained. Note that the fourth conductive layer 10 at the boundary between the electrode notch portion 10249 and the fourth conductive layer 10243
The shape of 243 is preferably a smooth curve. By this, the alignment of the adjacent liquid crystal molecules 10248 becomes extremely close, so that the alignment failure is reduced. Second alignment film 10
Defects in the alignment film can also be reduced due to the step cut by the electrode notch portion 10249.

FIG. 87A is an example of a cross-sectional view of a pixel in the case where an IPS (In-Plane-Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87A to a liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle in principle and small gradation dependency of response speed.

Features of the pixel structure shown in FIG. 87A will be described. Liquid crystal molecules 1 shown in FIG. 87 (A)
0318 is an elongated molecule having a major axis and a minor axis. In order to indicate the orientation of the liquid crystal molecules 10318, the length is shown in FIG. 87 (A). That is, it is assumed that the direction of the major axis of the liquid crystal molecule 10318 represented long is parallel to the paper surface, and the direction of the major axis is closer to the normal direction of the paper surface as the liquid crystal molecule 10318 represented shorter . That is, the liquid crystal molecules 10318 shown in FIG. 87A are aligned such that the direction of the major axis is always horizontal to the substrate. FIG. 87A shows the alignment in the absence of an electric field, but when an electric field is applied to the liquid crystal molecules 10318, the direction of the major axis always maintains the horizontal direction with the substrate, Rotate at. By this state, a liquid crystal display device having a large viewing angle can be obtained.

Note that a bottom gate transistor using an amorphous semiconductor is used as the transistor. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured inexpensively using a substrate with a large area.

The liquid crystal display device has a main part for displaying an image, which is called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates with a gap of several micrometers.
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 87A, two substrates are a first substrate 10301 and a second substrate 10316. A transistor and a pixel electrode are formed on the first substrate. A light shielding film 10314, a color filter 10315, a spacer 10317, and a second alignment film 10312 are formed over the second substrate.

Note that the light shielding film 10314 may not be formed on the second substrate 10316. Shading film 1
When 0314 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1031
In the case of forming 4, it is possible to obtain a display device with less light leakage at the time of black display.

Note that the color filter 10315 may not be formed on the second substrate 10316.
When the color filter 10315 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. However, even when the color filter 10315 is not formed, a display device capable of performing color display by field sequential driving can be obtained. Since the structure is simple, the yield can be improved. Meanwhile, color filter 1031
In the case of forming 5, a display device capable of color display can be obtained.

A spherical spacer may be dispersed on the second substrate 10316 instead of the spacer 10317. In the case of dispersing spherical spacers, the number of steps is reduced, and thus the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case of forming the spacer 10317, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with few display unevenness can be obtained.

A process to be performed on the first substrate 10301 will be described.

First, a first insulating film 10302 is formed over a first substrate 10301 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10302 may not be formed. The first insulating film 10302 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, over the first insulating film 10302, a first conductive layer 10303 is formed by photolithography,
It is formed by a laser direct writing method or an inkjet method.

Next, a second insulating film 10304 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10304, impurities from the substrate affect the semiconductor layer,
It has a function to prevent the change of the property of the transistor.

Next, a first semiconductor layer 10305 and a second semiconductor layer 10306 are formed. Note that the first semiconductor layer 10305 and the second semiconductor layer 10306 are continuously formed, and their shapes are processed at the same time.

Next, a second conductive layer 10307 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method which is performed when the shape of the second conductive layer 10307 is processed. Note that
For the second conductive layer 10307, a material having transparency or a material having reflectivity may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10306 is etched using the second conductive layer 10307 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10307. Then, a portion of the first conductive layer 10303 from which the second semiconductor layer 10306 is removed becomes a transistor and a channel region. By this, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10308 is formed, and a contact hole is selectively formed in the third insulating film 10308. Note that a contact hole may be formed in the second insulating film 10304 at the same time as the contact hole is formed in the third insulating film 10308.

Next, a third conductive layer 10309 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Here, the shape of the third conductive layer 10309 is two comb teeth which are engaged with each other. One comb-like electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and the other comb-like electrode is electrically connected to the common electrode. By this, a lateral electric field can be effectively applied to the liquid crystal molecules 10318.

Next, a first alignment film 10310 is formed. Note that after the first alignment film 10310 is formed,
Rubbing may be performed to control the alignment of liquid crystal molecules. Rubbing is a step of applying streaks to the alignment film by rubbing the alignment film with a cloth. By performing the rubbing, the alignment film can have alignment.

The first substrate 10301 manufactured as described above, the light shielding film 10314, and the color filter 10
A gap of several micrometers is provided between the spacer 315, the spacer 10317, and the second alignment film 10312 with a sealing material. Then, a liquid crystal material is injected between the two substrates.

FIG. 87B is an example of a cross-sectional view of a pixel in the case where a FFS (Fringe Field Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87B to a liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle in principle and small gradation dependency of response speed.

The features of the pixel structure shown in FIG. 89B will be described. Liquid crystal molecules 1 shown in FIG. 89 (B)
0348 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecule 10348, in FIG. 89B, it is expressed by its length. That is, it is assumed that the direction of the major axis of the liquid crystal molecule 10348 represented long is parallel to the paper surface, and the direction of the major axis is closer to the normal direction of the paper surface as the liquid crystal molecule 10348 represented shorter . That is, the liquid crystal molecules 10348 shown in FIG. 89B are aligned such that the direction of the major axis is always horizontal to the substrate. FIG. 89B shows the alignment in the absence of an electric field, but when an electric field is applied to the liquid crystal molecules 10348, the orientation of the major axis is always horizontal to the substrate, Rotate at. By this state, a liquid crystal display device having a large viewing angle can be obtained.

Note that a bottom gate transistor using an amorphous semiconductor is used as the transistor. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured inexpensively using a substrate with a large area.

The liquid crystal display device has a main part for displaying an image, which is called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates with a gap of several micrometers.
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 89B, the two substrates are a first substrate 10331 and a second substrate 10346. A transistor and a pixel electrode are formed on a first substrate, and a light shielding film 10344 and a color filter 1 are formed on a second substrate.
[0345] A spacer 10347 and a second alignment film 10342 are formed.

Note that the light shielding film 10344 may not be formed on the second substrate 10346. Shading film 1
In the case where 0344 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. Meanwhile, the light shielding film 1034
In the case of forming 4, it is possible to obtain a display device with less light leakage at the time of black display.

Note that the color filter 10345 may not be formed on the second substrate 10346.
When the color filter 10345 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10345 is not formed, a display device capable of performing color display by field sequential driving can be obtained. Meanwhile, the color filter 1034
In the case of forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed on the second substrate 10346 instead of the spacers 10347. In the case of dispersing spherical spacers, the number of steps is reduced, and thus the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case of forming the spacer 10347, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with less display unevenness can be obtained.

A process to be performed on the first substrate 10331 will be described.

First, a first insulating film 10332 is formed over the first substrate 10331 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10332 may not be formed. The first insulating film 10332 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, over the first insulating film 10332, a first conductive layer 10333 is formed by photolithography,
It is formed by a laser direct writing method or an inkjet method.

Next, a second insulating film 10334 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10334, impurities from the substrate affect the semiconductor layer,
It has a function to prevent the change of the property of the transistor.

Next, a first semiconductor layer 10335 and a second semiconductor layer 10336 are formed. Note that the first semiconductor layer 10335 and the second semiconductor layer 10336 are continuously formed, and their shapes are processed at the same time.

Next, a second conductive layer 10337 is formed by photolithography, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method which is performed when the shape of the second conductive layer 10337 is processed. Note that
For the second conductive layer 10337, a material having transparency or a material having reflectivity may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10336 is etched using the second conductive layer 10337 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10337. Then, a portion of the first conductive layer 10333 from which the second semiconductor layer 10336 is removed becomes a transistor and a channel region. By this, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10338 is formed, and a contact hole is selectively formed in the third insulating film 10338.

Next, a fourth conductive layer 10343 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a fourth insulating film 10349 is formed, and a contact hole is selectively formed in the fourth insulating film 10349. Note that the surface of the fourth insulating film 10349 is preferably as flat as possible. The reason is that the alignment of the liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, a third conductive layer 10339 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Here, the third conductive layer 10339 has a comb-like shape.

Next, a first alignment film 10340 is formed. After forming the first alignment film 10340,
Rubbing may be performed to control the alignment of liquid crystal molecules. Rubbing is a step of applying streaks to the alignment film by rubbing the alignment film with a cloth. By performing the rubbing, the alignment film can have alignment.

The first substrate 10331 manufactured as described above, the light shielding film 10344, and the color filter 10
A liquid crystal material can be manufactured by bonding a 345, a spacer 10347, and a second alignment film 10342 with a gap of several micrometers with a sealant and injecting a liquid crystal material between two substrates, whereby a liquid crystal panel can be manufactured.

Here, materials which can be used for each conductive layer or each insulating film will be described.

The first insulating film 10102 in FIG. 85; the first insulating film 10202 in FIG. 86A;
As the first insulating film 10232 of FIG. 87A, the first insulating film 10302 of FIG. 87A, and the first insulating film 10332 of FIG. 87B, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film An insulating film such as SiOxNy) can be used. Alternatively, the first insulating film 101
For the insulating film 02, a stacked-layer insulating film in which two or more films of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), and the like are combined can be used.

The first conductive layer 10103 in FIG. 85; the first conductive layer 10203 in FIG. 86A;
87A, the first conductive layer 10303 in FIG. 87A, the first conductive layer 10303 in FIG. 87A, and the first conductive layer 10333 in FIG. Mo, Ti
, Al, Nd, Cr, etc. can be used. Or Mo, Ti, Al, Nd, C
A stacked structure in which two or more of r and the like are combined can also be used.

The second insulating film 10104 in FIG. 85; the second insulating film 10204 in FIG. 86A;
As the second insulating film 10234 of FIG. 87, the second insulating film 10304 of FIG. 87A, and the second insulating film 10334 of FIG. 87B, a thermal oxide film, a silicon oxide film, a silicon nitride film, or an oxide film. A silicon nitride film or the like can be used. Alternatively, a stacked structure in which two or more of a thermal oxide film, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and the like are combined can be used. Note that in a portion in contact with the semiconductor layer, a silicon oxide film is preferable. This is because when the silicon oxide film is used, trap levels at the interface with the semiconductor layer decrease. Note that, in a portion in contact with Mo, a silicon nitride film is preferable.
This is because the silicon nitride film does not oxidize Mo.

The first semiconductor layer 10105 in FIG. 85; the first semiconductor layer 10205 in FIG. 86A;
The first semiconductor layer 10235 of (B), the first semiconductor layer 10305 of FIG. 87A, and FIG.
As the first semiconductor layer 10335 of (B), silicon or silicon germanium (Si
Ge) etc. can be used.

Second semiconductor layer 10106 in FIG. 85; second semiconductor layer 10206 in FIG. 86A;
(B) second semiconductor layer 10236, FIG. 87 (A) second semiconductor layer 10306, FIG.
As the second semiconductor layer 10336 of (B), silicon or the like containing phosphorus or the like can be used.

The second conductive layer 10107 and the third conductive layer 10109 of FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 of FIG. 86A, the second conductive layer 10237 of FIG. 86B, and Second conductive layer 10239, second conductive layer 10307 and second conductive layer 1 of FIG.
As a material having transparency of the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 87B, indium tin oxide in which tin oxide is mixed with indium oxide is used. (ITO) film, indium tin silicon oxide (ITSO) film in which silicon oxide is mixed with indium tin oxide (ITO), indium zinc oxide (IZO) film in which zinc oxide is mixed with indium oxide, zinc oxide film or oxide A tin film or the like can be used. Note that IZO is a transparent conductive material formed by sputtering using a target in which 2 to 20 wt% of zinc oxide (ZnO) is mixed with ITO.

The second conductive layer 10107 and the third conductive layer 10109 of FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 of FIG. 86A, the second conductive layer 10237 of FIG. 86B, and Second conductive layer 10239, second conductive layer 10307 and second conductive layer 1 of FIG.
As materials having reflectivity of the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 87B, Ti, Mo, Ta, Cr, W
, Al, etc. can be used. Alternatively, a two-layer structure in which Ti, Mo, Ta, Cr, W and Al are laminated, or a three-layer lamination structure in which Al is sandwiched by metals such as Ti, Mo, Ta, Cr, W may be employed.

The third insulating film 10108 in FIG. 85; the third insulating film 10208 in FIG. 86A;
86B, the third conductive film 10239 in FIG. 86B, the third insulating film 10308 in FIG. 87A, the third insulating film 10338 in FIG. 87B, and the fourth insulating film 10338 in FIG. Insulating film 10
As 349, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride or the like), an organic compound material with a low dielectric constant (photosensitive or non-photosensitive organic resin material), or the like can be used. Alternatively, a material containing siloxane can also be used. Siloxane is a material having a skeletal structure formed by the bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used.

The first alignment film 10110 in FIG. 85; the first alignment film 10210 in FIG. 86A;
A polymer film of polyimide or the like can be used as the first alignment film 10240 of FIG. 86, the first alignment film 10310 of FIG. 86B, and the first alignment film 10340 of FIG. 87B.

Next, a pixel structure in the case where each liquid crystal mode and a transistor are combined will be described with reference to a top view (layout diagram) of the pixel.

In addition, as a liquid crystal mode, TN (Twisted Nematic) mode, IPS (
In-Plane-Switching mode, FFS (Fringe Field)
Switching mode, MVA (Multi-domain Vertical)
Alignment) mode, PVA (Pattered Vertical Ali)
gnment), ASM (Axially Symmetric aligned mi)
cro-cell mode, OCB (Optical Compensated Birr)
efringence mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (AntiFerroelectric Liqui
d) Crystal or the like can be used.

Note that as the transistor, a thin film transistor (TFT) having a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystalline or semi-amorphous) silicon, or the like can be used.

Note that a top gate type, a bottom gate type, or the like can be used as a structure of the transistor. As the bottom gate transistor, a channel etch type or a channel protective type can be used.

FIG. 88 is an example of a top view of a pixel in the case where a TN method and a transistor are combined.
By applying the pixel structure shown in FIG. 88 to a liquid crystal display device, the liquid crystal display device can be manufactured inexpensively.

The pixels illustrated in FIG. 88 include a scan line 10401, a video signal line 10402, and a capacitor line 10403.
, A transistor 10404, a pixel electrode 10405, and a pixel capacitor 10406.

The scan line 10401 has a function of transmitting a signal (scan signal) to a pixel. Video signal line 10
A function 402 is for transmitting a signal (video signal) to a pixel. Note that scanning line 104
Since 01 and the video signal line 10402 are arranged in a matrix, they are formed of conductive layers of different layers. In addition, the scanning line 10401 and. A semiconductor layer may be disposed at the intersection with the video signal line 10402. By doing this, the scanning line 10401 and. Video signal line 10
And the cross capacitance can be reduced.

The capacitor line 10403 is disposed in parallel with the pixel electrode 10405. A portion where the capacitor line 10403 and the pixel electrode 10405 overlap with each other is a pixel capacitor 10406. Note that a part of the capacitor line 10403 is extended along the video signal line 10402 so as to surround the video signal line 10402. By this, crosstalk can be reduced. Cross talk is a phenomenon in which the potential of an electrode to be held is changed in accordance with the change in the potential of the video signal line 10402. Note that the capacitance line 10403 and the video signal line 1040
By arranging the semiconductor layer between the two, the cross capacitance can be reduced. Note that
The capacitor line 10403 is made of the same material as the scan line 10401.

The transistor 10404 has a function as a switch for electrically connecting the video signal line 10402 and the pixel electrode 10405. Note that one of the source region and the drain region of the transistor 10404 is arranged to be surrounded by the other of the source region and the drain region of the transistor 10404. Thus, the channel width of the transistor 10404 is increased, so that switching capability can be improved. Note that transistor 10404
The gate electrode of is disposed so as to surround the semiconductor layer.

The pixel electrode 10405 is electrically connected to one of the source electrode and the drain electrode of the transistor 10404. The pixel electrode 10405 is an electrode for applying the signal voltage transmitted by the video signal line 10402 to the liquid crystal element. The pixel electrode 10405 is rectangular. By this, the aperture ratio of the pixel can be increased. The pixel electrode 1040
As 5, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10405.

FIG. 89A is an example of a top view of a pixel in the case where the MVA method and a transistor are combined. By applying the pixel structure shown in FIG. 89A to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, high response speed, and high contrast can be obtained.

The pixel illustrated in FIG. 89A includes a scan line 10501, a video signal line 10502, and a capacitor line 10
503, a transistor 10504, a pixel electrode 10505, and a pixel capacitor 10506;
And an orientation control protrusion 10507.

The scan line 10501 has a function of transmitting a signal (scan signal) to a pixel. Video signal line 10
502 has a function for transmitting a signal (video signal) to a pixel. Note that scanning line 105
Since the image signal lines 01 and the video signal lines 10502 are arranged in a matrix, they are formed of conductive layers of different layers. In addition, the scanning line 10501 and. A semiconductor layer may be disposed at the intersection with the video signal line 10502. By doing this, the scanning line 10501 and. Video signal line 10
And the cross capacitance can be reduced.

The capacitor line 10503 is disposed in parallel with the pixel electrode 10505. A portion where the capacitor line 10503 and the pixel electrode 10505 overlap with each other is a pixel capacitor 10506. Note that a part of the capacitor line 10503 is extended along the video signal line 10502 so as to surround the video signal line 10502. By this, crosstalk can be reduced. Cross talk is a phenomenon in which the potential of an electrode to be held is changed in accordance with the change in potential of the video signal line 10502. Note that the capacitance line 10503 and the video signal line 1050
By arranging the semiconductor layer between the two, the cross capacitance can be reduced. Note that
The capacitor line 10503 is made of the same material as the scan line 10501.

The transistor 10504 has a function as a switch for electrically connecting the video signal line 10502 and the pixel electrode 10505. Note that one of the source region and the drain region of the transistor 10504 is arranged to be surrounded by the other of the source region and the drain region of the transistor 10504. By this, the channel width of the transistor 10504 is increased, so that switching capability can be improved. Note that transistor 10504
The gate electrode of is disposed so as to surround the semiconductor layer.

The pixel electrode 10505 is electrically connected to one of the source electrode and the drain electrode of the transistor 10504. The pixel electrode 10505 is an electrode for applying the signal voltage transmitted by the video signal line 10502 to the liquid crystal element. The pixel electrode 10505 is rectangular. By this, the aperture ratio of the pixel can be increased. The pixel electrode 1050
As 5, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10505.

The alignment control protrusion 10507 is formed on the opposing substrate. The alignment control projections 10507 have a function of aligning liquid crystal molecules radially. The shape of the alignment control protrusion 10507 is not limited. For example, the shape of the alignment control protrusion 10507 may be V-shaped. By this, a plurality of regions in which the alignment of liquid crystal molecules is different can be formed. The viewing angle can be improved.

FIG. 89B is an example of a top view of a pixel in the case where a PVA method and a transistor are combined. By applying the pixel structure shown in FIG. 89B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, high response speed, and high contrast can be obtained.

The pixel illustrated in FIG. 89B includes a scan line 10511, a video signal line 10512, and a capacitor line 10
513, a transistor 10514, a pixel electrode 10515, and a pixel capacitor 10516;
An electrode notch portion 10517 is provided.

The scan line 10511 has a function of transmitting a signal (scan signal) to a pixel. Video signal line 10
512 has a function for transmitting a signal (video signal) to a pixel. Note that scanning line 105
11 and the video signal lines 10512 are formed in conductive layers of different layers because they are arranged in a matrix. In addition, the scanning line 10511 and. A semiconductor layer may be disposed at the intersection with the video signal line 10512. By doing this, the scanning line 10511 and. Video signal line 10
And the cross capacitance can be reduced.

The capacitor line 10513 is disposed in parallel with the pixel electrode 10515. A portion where the capacitor line 10513 and the pixel electrode 10515 overlap with each other is a pixel capacitor 10516. Note that part of the capacitor line 10513 is extended along the video signal line 10512 so as to surround the video signal line 10512. By this, crosstalk can be reduced. Cross talk is a phenomenon in which the potential of an electrode to be held is changed in accordance with the change in the potential of the video signal line 10512. Note that the capacitance line 10513 and the video signal line 1051
By arranging the semiconductor layer between the two, the cross capacitance can be reduced. Note that
The capacitor line 10513 is formed of the same material as the scan line 10511.

The transistor 10514 has a function as a switch for electrically connecting the video signal line 10512 and the pixel electrode 10515. Note that one of the source region and the drain region of the transistor 10514 is provided so as to be surrounded by the other of the source region and the drain region of the transistor 10514. Accordingly, the channel width of the transistor 10514 is increased, so that switching capability can be improved. Note that the transistor 10514
The gate electrode of is disposed so as to surround the semiconductor layer.

The pixel electrode 10515 is electrically connected to one of the source electrode and the drain electrode of the transistor 10514. The pixel electrode 10515 is an electrode for applying the signal voltage transmitted by the video signal line 10512 to the liquid crystal element. Note that the pixel electrode 10515 has a shape in accordance with the shape of the electrode notch portion 10517. Specifically, the electrode notch 10517
It has a shape in which a portion where the pixel electrode 10515 is cut out is formed in a portion where there is no light. By this, a plurality of regions in which the alignment of liquid crystal molecules is different can be formed. The viewing angle can be improved. Note that as the pixel electrode 10515, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10515.

FIG. 90A is an example of a top view of a pixel in the case where an IPS method and a transistor are combined. By applying the pixel structure shown in FIG. 90A to a liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle in principle and small gradation dependency of response speed.

The pixel shown in FIG. 90A includes a scanning line 10601, a video signal line 10602, and a common electrode 1.
And a pixel electrode 10605.

The scan line 10601 has a function of transmitting a signal (scan signal) to a pixel. Video signal line 10
A function 602 is for transmitting a signal (video signal) to a pixel. Note that scanning line 106
Since the image signal lines 01 and the video signal lines 10602 are arranged in a matrix, they are formed of conductive layers of different layers. Note that a semiconductor layer may be provided at the intersection of the scan line 10601 and the video signal line 10602. By doing this, the scanning line 10601 and. Video signal line 106
And the cross capacitance can be reduced. The video signal line 10602 is connected to the pixel electrode 10.
It is formed according to the shape of 605.

The common electrode 10603 is disposed in parallel with the pixel electrode 10605. Common electrode 1060
3 is an electrode for generating a transverse electric field. Note that the shape of the common electrode 10603 is a bent comb-like shape. Note that a part of the common electrode 10603 is extended along the video signal line 10602 so as to surround the video signal line 10602. By this, crosstalk can be reduced. Cross talk is a phenomenon in which the potential of an electrode to be held is changed in accordance with the change in potential of the video signal line 10602. Note that the cross capacitance can be reduced by arranging the semiconductor layer between the common electrode 10603 and the video signal line 10602. Note that portions of the common electrode 10603 disposed in parallel with the scanning line 10601 are made of the same material as the scanning line 10601. Common electrode 106
In a portion arranged in parallel with the pixel electrode 10605 of 03, the same material as the pixel electrode 10605 is used.

The transistor 10604 has a function as a switch for electrically connecting the video signal line 10602 and the pixel electrode 10605. Note that one of the source region and the drain region of the transistor 10604 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10604. By this, the channel width of the transistor 10604 is increased, so that switching capability can be improved. Note that transistor 10604
The gate electrode of is disposed so as to surround the semiconductor layer.

The pixel electrode 10605 is electrically connected to one of the source electrode and the drain electrode of the transistor 10604. The pixel electrode 10505 is an electrode for applying the signal voltage transmitted by the video signal line 10602 to the liquid crystal element. Note that the shape of the pixel electrode 10605 is a bent comb-like shape. By so doing, a transverse electric field can be applied to the liquid crystal molecules.
A plurality of regions with different alignment of liquid crystal molecules can be formed. The viewing angle can be improved. Note that as the pixel electrode 10605, a transparent material or a reflective material can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10605.

Note that the comb-tooth-like portion of the common electrode 10603 and the pixel electrode 10605 may be formed of different conductive layers. For example, the comb-tooth-like portion of the common electrode
It may be formed of the same conductive layer as 0601 or the video signal line 10602. Similarly, the pixel electrode 10605 may be formed of the same conductive layer as the scan line 10601 or the video signal line 10602.

FIG. 90B is a top view of a pixel in the case where an FFS method and a transistor are combined. By applying the pixel structure shown in FIG. 90B to a liquid crystal display device, it is possible to obtain a liquid crystal display device having a large viewing angle in principle and small gradation dependency of response speed.

The pixel illustrated in FIG. 90B includes a scan line 10611, a video signal line 10612, and the common electrode 1.
The pixel may include the transistor 0613, the transistor 10614, and the pixel electrode 10615.

The scan line 10611 has a function of transmitting a signal (scan signal) to a pixel. Video signal line 10
A function 612 is for transmitting a signal (video signal) to a pixel. Note that scanning line 106
11 and the video signal lines 10612 are formed in conductive layers of different layers since they are arranged in a matrix. Note that the scanning line 10611 and. A semiconductor layer may be disposed at the intersection with the video signal line 10612. By doing this, the scanning line 10611 and. Video signal line 10
And the cross capacitance can be reduced. Note that the video signal line 10612 is connected to the pixel electrode 1
It is formed in accordance with the shape of 0615.

The common electrode 106013 is uniformly formed in the lower part of the pixel electrode 10615 and in the lower part between the pixel electrode 10615 and the pixel electrode 10615. Note that as the common electrode 106013, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the common electrode 106013.

The transistor 10614 has a function as a switch for electrically connecting the video signal line 10612 and the pixel electrode 10615. Note that one of the source region and the drain region of the transistor 10604 is provided so as to be surrounded by the other of the source region and the drain region of the transistor 10614. Accordingly, the channel width of the transistor 10614 is increased, so that switching capability can be improved. Note that the transistor 10614
The gate electrode of is disposed so as to surround the semiconductor layer.

The pixel electrode 10615 is electrically connected to one of the source electrode and the drain electrode of the transistor 10614. The pixel electrode 10515 is an electrode for applying the signal voltage transmitted by the video signal line 10612 to the liquid crystal element. Note that the shape of the pixel electrode 10615 is a bent comb-like shape. By so doing, a transverse electric field can be applied to the liquid crystal molecules.
Note that the comb-tooth-shaped pixel electrode 10615 is disposed closer to the liquid crystal layer than a uniform portion of the common electrode 10613. A plurality of regions with different alignment of liquid crystal molecules can be formed.
The viewing angle can be improved. Note that as the pixel electrode 10615, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10615.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 11)
In this embodiment mode, a manufacturing process of a liquid crystal cell (also referred to as a liquid crystal panel) is described.

A manufacturing process of a liquid crystal cell in the case of using a vacuum injection method as a liquid crystal filling method is shown in FIG.
This will be described with reference to A) to (E) and FIGS. 92 (A) to (C).

FIG. 92C is a cross-sectional view showing a liquid crystal cell. First substrate 70101 and second substrate 70
And 107 are attached via a spacer 70106 and a sealing material 70105.
Then, liquid crystal 70109 is disposed between the first substrate 70101 and the second substrate 70107. Note that an alignment film 70102 is formed over the first substrate 70101, and the alignment film 701 is formed.
A 08 is formed on the second substrate 70107.

On the first substrate 70101, a plurality of pixels are formed in a matrix. Each of the plurality of pixels may have a transistor. Note that the first substrate 70101 is
It may be called an FT substrate, an array substrate, or a TFT array substrate. As the first substrate 70101, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fibers (silk, cotton, hemp), synthetic Use of fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate, cupra, rayon, regenerated polyester, etc.), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foils, etc. it can. Alternatively, the skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. However, the present invention is not limited to this, and various ones can be used.

A common electrode, a color filter, a black matrix, and the like are formed over the second substrate 70107. Note that the second substrate 70107 may be referred to as an opposing substrate or a color filter substrate.

The alignment film 70102 has a function of aligning liquid crystal molecules in a certain direction. Alignment film 70102
For example, a polyimide resin can be used. However, the present invention is not limited to this, and various ones can be used. Note that the alignment film 70108 is similar to the alignment film 70102.

The sealant 70105 is formed of the first substrate 70101 and the second substrate 70101 so that the liquid crystal 70109 does not leak.
Has a function of bonding the substrate 70107. That is, it functions as a sealing material.

The spacer 70106 has a function of keeping a space (cell gap of liquid crystal) between the first substrate 70101 and the second substrate 70107 constant. As the spacer 70106, a granular spacer or a columnar spacer can be used. There are two types of granular spacers: fiber-like ones and spherical ones. And as a material of a granular spacer, there is plastic or glass. Spherical spacers formed of plastic are called plastic beads and are widely used. In addition, the fiber-like spacer formed with glass is called glass fiber, and is mixed and utilized for a sealing material.

FIG. 91A is a cross-sectional view showing the step of forming an alignment film 70102 over the first substrate 70101. The alignment film 70102 is formed on the first substrate 70101 by a roller coating method using a roller 70103. However, the alignment film 701 is formed on the first substrate 70101.
As a method of forming 02, in addition to the roller coating method, offset printing method, dip coating method, air knife coating method, curtain coating method, wire bar coating method, gravure coating method, extrusion coating method or the like may be used. it can. Thereafter, temporary firing and main firing are sequentially applied to the alignment film 70102.

FIG. 91B is a cross-sectional view showing the step of rubbing the alignment film 70102. The rubbing process is performed by rubbing the alignment film 70102 by rotating a rubbing roller 70104 in which a cloth is wound around a drum. When this rubbing process is performed on the alignment film 70102, a groove for aligning liquid crystal molecules in a predetermined direction is formed in the alignment film 70102. However, the invention is not limited thereto, and a groove may be formed in the alignment film using an ion beam. after that,
A water cleaning process is performed on the first substrate 70101. By doing this, the first substrate 70101
Foreign matter or dirt on the surface of the

Although not shown, an alignment film 70108 is formed on the second substrate 70107 as in the case of the first substrate 70101, and rubbing processing is performed on the alignment film 70108. However, the invention is not limited thereto, and a groove may be formed in the alignment film using an ion beam.

FIG. 91C is a cross-sectional view showing the step of forming the seal material 70105 on the alignment film 70102. The sealing material 70105 is applied by a drawing device or screen printing to form a seal pattern. This seal pattern is formed along the outer periphery of the first substrate 70101, and a liquid crystal injection port is provided in part of the seal pattern. And U for temporary fixing
The V-resin is spot-coated outside the display area of the first substrate 70101 by a dispenser or the like.

Note that the sealant 70105 may be formed on the second substrate 70107.

FIG. 91D is a cross-sectional view showing a step of dispersing the spacer 70106 on the first substrate 70101. The spacer 70106 is sprayed from the nozzle with the compressed gas and sprayed (dry spraying). Alternatively, the spacer 70106 is mixed with the volatile liquid and sprayed so as to expose the liquid (wet spraying). The spacer 70106 can be uniformly spread over the first substrate 70101 by such dry spreading or wet spreading.

Here, the case where spherical particulate spacers are used as the spacers 70106 has been described. However, the present invention is not limited to this, and columnar spacers can also be used. The columnar spacer may be formed on the first substrate 70101 or may be formed on the second substrate 70107. Alternatively, part of the spacer may be formed on the first substrate 70101 and the remainder may be formed on the second substrate 70107.

In addition, the spacer may be mixed in the sealing material. By so doing, the cell gap of the liquid crystal can be easily kept constant.

FIG. 91E is a cross-sectional view showing a step of bonding the first substrate 70101 and the second substrate 70107 together. The first substrate 70101 and the second substrate 70107 are attached to each other in the air. Then, both substrates are pressurized so that the gap between the first substrate 70101 and the second substrate 70107 becomes constant. After that, ultraviolet light irradiation or heat treatment is sealing material 701
The sealing material 70105 is cured by being applied to 05.

FIGS. 92A and 92B are top views showing the process of filling the liquid crystal. First substrate 70
A cell (also referred to as an empty cell) in which 101 and the second substrate 70107 are bonded is placed in a vacuum chamber. Then, after the pressure in the vacuum chamber is reduced, the liquid crystal injection port 70113 of the empty cell is immersed in the liquid crystal. Then, when the inside of the vacuum chamber is opened to the atmosphere, the liquid crystal 70109 is filled in the empty cell by differential pressure and capillary action.

When the necessary amount of liquid crystal 70109 is filled in the empty cell, the liquid crystal injection port is sealed by the resin 70110. Then, the liquid crystal extra attached to the empty cell is cleaned. Thereafter, the realignment process is performed on the liquid crystal 70109 by the annealing process. Thus, the liquid crystal cell is completed.

Next, a manufacturing process of a liquid crystal cell in the case of using a dropping method as a liquid crystal filling method will be described with reference to FIG.
Description will be made with reference to (A) to (D) and FIGS. 94 (A) to (C).

FIG. 94 (C) is a cross-sectional view showing a liquid crystal cell. First substrate 70301 and second substrate 70
And 307 are attached via a spacer 70306 and a sealing material 70305.
A liquid crystal 70309 is disposed between the first substrate 70301 and the second substrate 70307. Note that an alignment film 70302 is formed over the first substrate 70301, and the alignment film 703 is formed.
08 is formed on the second substrate 70307.

On the first substrate 70301, a plurality of pixels are formed in a matrix. Each of the plurality of pixels may have a transistor. Note that the first substrate 70301 is
It may be called an FT substrate, an array substrate, or a TFT array substrate. As the first substrate 70301, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic Use of fibers (nylon, polyurethane, polyester) or regenerated fibers (acetate, cupra, rayon, regenerated polyester, etc.), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foils, etc. it can. Alternatively, the skin (skin, dermis) or subcutaneous tissue of animals such as humans may be used as a substrate. However, the present invention is not limited to this, and various ones can be used.

A common electrode, a color filter, a black matrix, and the like are formed over the second substrate 70307. Note that the second substrate 70307 may be referred to as an opposing substrate or a color filter substrate.

The alignment film 70302 has a function of aligning liquid crystal molecules in a certain direction. Alignment film 70302
For example, a polyimide resin can be used. However, the present invention is not limited to this, and various ones can be used. Note that the alignment film 70308 is similar to the alignment film 70302.

The sealant 70305 is formed of the first substrate 70301 and the second substrate 70301 so that the liquid crystal 70309 does not leak.
Has a function of bonding the substrate 70307. That is, it functions as a sealing material.

The spacer 70306 has a function of keeping a space (cell gap of liquid crystal) between the first substrate 70301 and the second substrate 70307 constant. As the spacer 70306, a granular spacer or a columnar spacer can be used. There are two types of granular spacers: fiber-like ones and spherical ones. And as a material of a granular spacer, there is plastic or glass. Spherical spacers formed of plastic are called plastic beads and are widely used. In addition, the fiber-like spacer formed with glass is called glass fiber, and is mixed and utilized for a sealing material.

FIG. 93A is a cross-sectional view showing the step of forming an alignment film 70302 over the first substrate 70301. FIG. The alignment film 70302 is formed on the first substrate 70301 by a roller coating method using a roller 70303. However, the alignment film 703 is formed on the first substrate 70301.
In addition to roller coating, offset printing, dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, etc. may also be used to form 02. it can. Thereafter, temporary firing and main firing are sequentially applied to the alignment film 70302.

FIG. 93B is a cross-sectional view showing the step of rubbing the alignment film 70302. The rubbing process is performed by rubbing the alignment film 70302 by rotating a rubbing roller 70304 in which a cloth is wound around a drum. When the rubbing process is performed on the alignment film 70302, a groove for aligning liquid crystal molecules in a certain direction is formed in the alignment film 70302. However, the invention is not limited thereto, and a groove may be formed in the alignment film using an ion beam. after that,
A water cleaning process is performed on the first substrate 70301. By doing this, the first substrate 70301
Foreign matter or dirt on the surface of the

Although not shown, an alignment film 70308 is formed on the second substrate 70307 as in the case of the first substrate 70301, and rubbing processing is performed on the alignment film 70308. However, the invention is not limited thereto, and a groove may be formed in the alignment film using an ion beam.

FIG. 93C is a cross-sectional view showing the step of forming the seal material 70305 on the alignment film 70302. The sealing material 70305 is applied by a drawing device or screen printing to form a seal pattern. This seal pattern is formed along the outer periphery of the first substrate 70301. Here, the sealant 70305 is a radical UV resin or a cationic U
V resin is used. Then, the conductive resin is applied spotwise by a dispenser.

Note that the sealant 70305 may be formed over the second substrate 70307.

FIG. 93D is a cross-sectional view showing a step of dispersing the spacer 70306 on the first substrate 70301. The spacer 70306 is sprayed from the nozzle with the compressed gas and sprayed (dry spraying). Alternatively, the spacer 70306 is mixed with the volatile liquid and sprayed so as to expose the liquid (wet spraying). The spacer 70306 can be uniformly spread over the first substrate 70301 by such dry spreading or wet spreading.

Here, the case where a spherical granular spacer is used as the spacer 70306 has been described. However, the present invention is not limited to this, and columnar spacers can also be used. The columnar spacer may be formed on the first substrate 70301 or may be formed on the second substrate 70307. Alternatively, part of the spacer may be formed on the first substrate 70301 and the remainder may be formed on the second substrate 70307.

In addition, the spacer may be mixed in the sealing material. By so doing, the cell gap of the liquid crystal can be easily kept constant.

FIG. 94A is a cross-sectional view showing a step of dropping liquid crystal 70309. FIG. After the defoaming treatment is performed on the liquid crystal 70309, the liquid crystal 70309 is dropped to the inside of the sealant 70305.

FIG. 94B is a top view after the liquid crystal 70309 is dropped. Sealing material 7030
The liquid crystal 70309 does not leak because the 5 is formed along the outer periphery of the first substrate 70301.

FIG. 94C is a cross-sectional view showing a step of bonding the first substrate 70301 and the second substrate 70307. The first substrate 70301 and the second substrate 70307 are attached to each other in a vacuum chamber. Then, both substrates are pressurized so that the gap between the first substrate 70301 and the second substrate 70307 becomes constant. Thereafter, ultraviolet light is applied to the sealing material 70305, whereby the sealing material 70305 is cured. Here, it is preferable that the display portion be covered with a mask and ultraviolet light be applied to the sealant 70305. This is because the liquid crystal 70309 can be prevented from being deteriorated by ultraviolet light. Then by annealing
Realignment processing is performed on the liquid crystal 70309. Thus, the liquid crystal cell is completed.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 12)
In this embodiment mode, a structure of a pixel of a display device and an operation of the pixel are described.

FIGS. 95A and 95B are timing charts showing an example of digital time gray scale drive. The timing chart of FIG. 95A shows a driving method in the case where a signal writing period (addressing period) to a pixel and a light emitting period (sustaining period) are separated.

A period for completely displaying an image for one display area is referred to as one frame period. One frame period has a plurality of subframe periods, and one subframe period has an address period and a sustain period. The address periods Ta1 to Ta4 indicate the time taken for signal writing to pixels in all the rows, and the periods Tb1 to Tb4 indicate the time taken for signal writing to pixels (or one pixel) for one row. The sustain periods Ts1 to Ts4 indicate the time for which the lighting or non-lighting state is maintained according to the video signal written to the pixel, and the ratio of the lengths is Ts
^{1: Ts2: Ts3: Ts4 =} 2 3: 2 2: 2 1: 2 0 = 8: 4: 2: is a 1. A gray scale is expressed depending on which sustain period light is emitted.

The operation will be described. First, in the address period Ta1, a pixel selection signal is input to the scan line sequentially from the first row to select a pixel. Then, when a pixel is selected, a video signal is input from the signal line to the pixel. Then, when the video signal is written to the pixel, the pixel holds the signal until the signal is input again. Lighting and non-lighting of each pixel in the sustain period Ts1 are controlled by the written video signal. Similarly, a video signal is input to the pixels in the address periods Ta2, Ta3 and Ta4, and lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3 and Ts4 are controlled by the video signals. Then, in each sub-frame period, it does not light up during the address period, and after the address period ends, the sustain period starts, and the pixel to which the signal for lighting is written is lighted.

Here, with reference to FIG. 95 (B), description will be given focusing on the ith pixel row. First, in the address period Ta1, a pixel selection signal is input to the scanning lines sequentially from the first row, and the address period T1 is input.
The pixel in the i-th row is selected in the period Tb1 (i) of the a1. Then, when the pixel in the i-th row is selected, a video signal is input from the signal line to the pixel in the i-th row. And
When a video signal is written to the ith row pixel, the ith row pixel holds that signal until the signal is input again. Lighting and non-lighting of the pixel in the i-th row in the sustain period Ts1 are controlled by the written video signal. Similarly, address periods Ta2, Ta3, T
At a4, a video signal is input to the ith row pixel, and lighting and non-lighting of the ith row pixel in the sustain periods Ts2, Ts3 and Ts4 are controlled by the video signal. Then, in each sub-frame period, it does not light up during the address period, and after the address period ends, the sustain period starts, and the pixel to which the signal for lighting is written is lighted.

Although the case of expressing 4-bit gradation has been described here, the number of bits and the number of gradations are not limited to this. The order of lighting does not have to be Ts1, Ts2, Ts3, or Ts4, and may be random or may be divided into a plurality of portions to emit light. Ts1 and Ts2
The lighting time of Ts3 and Ts4 does not have to be a power of two, and may be the same lighting time, or may be slightly shifted from the power of two.

Subsequently, a driving method in the case where the signal writing period (addressing period) to the pixel and the light emitting period (sustaining period) are not separated will be described. That is, the pixels in the row in which the write operation of the video signal is completed hold the signal until the signal is written (or erased) to the pixel next. The period from the writing operation to the next writing of a signal to this pixel is called data holding time. Then, during the data holding time, the pixel is turned on or off according to the video signal written to the pixel. The same operation is performed until the last line, and the address period ends. Then, the process proceeds to the signal writing operation of the next subframe period in order from the row in which the data holding time has ended.

Thus, in the case of a driving method in which the pixel is lit or not lit according to the video signal written to the pixel immediately when the signal writing operation is completed and the data holding time is reached, the data holding time is attempted to be shorter than the address period. Also, since it is not possible to input signals to two rows at the same time, it is not possible to shorten the data retention time because the address periods must not be overlapped. As a result, it becomes difficult to perform high gradation display.

Therefore, the data retention time shorter than the address period is set by providing the erase period. A driving method in the case of setting an erasing period and setting a data holding time shorter than an address period will be described with reference to FIG.

First, in the address period Ta1, pixel scan signals are input to the scan lines sequentially from the first row,
Pixels are selected. Then, when a pixel is selected, a video signal is input from the signal line to the pixel. Then, when the video signal is written to the pixel, the pixel holds the signal until the signal is input again. A sustain period Ts1 is generated by this written video signal.
Control of lighting and non-lighting of each pixel in FIG. In the row where the writing operation of the video signal is completed, the pixel is turned on or off according to the video signal written immediately. The same operation is performed until the last line, and the address period Ta1 ends. Then, the process proceeds to the signal writing operation of the next subframe period in order from the row in which the data holding time has ended. Similarly, a video signal is input to the pixels in the address periods Ta2, Ta3 and Ta4, and lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3 and Ts4 are controlled by the video signals. The end of the sustain period TS4 is set by the start of the erasing operation. This is because, when the signal written to the pixel is erased during the erasing time Te of each row, the signal is forced regardless of the video signal written to the pixel during the address period until the signal is written to the next pixel. It is because it becomes non-lighting. That is, the data holding time ends from the pixel of the row in which the erasing time Te has started.

Here, with reference to FIG. 96 (B), description will be given focusing on the ith pixel row. In the pixel row of the i-th row, in the address period Ta1, a pixel scan signal is input to the scan line sequentially from the first row to select a pixel. Then, when the pixel in the i-th row is selected in the period Tb1 (i), a video signal is input to the pixel in the i-th row. When a video signal is written to the pixel in the i-th row, the pixel in the i-th row holds the signal until the signal is input again. Lighting and non-lighting of the pixel in the i-th row in the sustain period Ts1 (i) are controlled by the written video signal. That is, when the video signal writing operation on the i-th row is completed,
The pixel in the i-th row is turned on or off according to the video signal written immediately. Similarly, a video signal is input to the pixel in the i-th row in the address periods Ta2, Ta3 and Ta4, and lighting and non-lighting of the pixel in the i-th row in the sustain periods Ts2, Ts3 and Ts4 are controlled by the video signal. The end of the sustain period Ts4 (i) is set by the start of the erase operation. This is because the light is forcibly turned off regardless of the video signal written to the pixel in the i-th row in the i-th row erasing time Ts (i). That is, when the erasing time Te (i) starts, the data holding time of the pixel in the i-th row ends.

Therefore, it is possible to provide a display device with high gradation and a high duty ratio (ratio of lighting period in one frame period) shorter than the address period without separating the address period and the sustain period. Since the instantaneous luminance can be lowered, the reliability of the display element can be improved.

Although the case of expressing 4-bit gradation has been described here, the number of bits and the number of gradations are not limited to this. In addition, the order of lighting does not have to be Ts1, Ts2, Ts3 and Ts4, and may be random or may be divided into a plurality to emit light. Also, Ts1, Ts2,
The lighting time of Ts3 and Ts4 does not have to be a power of two, and may be the same lighting time, or may be slightly shifted from the power of two.

The structure and operation of a pixel to which digital time gray scale driving can be applied will be described.

FIG. 97 is a diagram showing an example of a pixel configuration to which digital time grayscale driving can be applied.

The pixel 80300 includes a switching transistor 80301 and a driving transistor 803.
A light emitting element 80304 and a capacitor element 80303 are provided. The gate of the switching transistor 80301 is connected to the scan line 80306, the first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80305, and the second electrode (the other of the source electrode and the drain electrode) is a driving transistor. It is connected to the gate of 80302. The gate of the driving transistor 80302 is connected to the power supply line 80307 through the capacitor 80303, the first electrode is connected to the power supply line 80307, and the second electrode is the first electrode of the light emitting element 80304 (the
Connected to the pixel electrode). The second electrode of the light emitting element 80304 corresponds to the common electrode 80308.

Note that a low power supply potential is set to the second electrode (common electrode 80308) of the light emitting element 80304. The low power supply potential is a potential satisfying the low power supply potential <high power supply potential with reference to the high power supply potential set to the power supply line 80307, and GND, 0 V, etc. are set as the low power supply potential, for example. Also good. The potential difference between the high power supply potential and the low power supply potential is
In order to cause the light emitting element 80304 to emit light by applying a current to the light emitting element 80304, the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80304. Set the potential.

Note that the capacitor 80303 can be omitted by substituting the gate capacitance of the driving transistor 80302. With regard to the gate capacitance of the driving transistor 80302, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, and the like overlap with the gate electrode, or the channel region and the gate electrode And a capacitance may be formed between them.

When a pixel is selected by the scan line 80306, that is, the switching transistor 80
When 301 is on, a video signal is input to the pixel from the signal line 80305.
Then, charge corresponding to a voltage corresponding to a video signal is accumulated in the capacitor 80303, and the capacitor 80303 holds the voltage. This voltage is a voltage between the gate of the driving transistor 80302 and the first electrode, and corresponds to the gate-source voltage Vgs of the driving transistor 80302.

In general, the operating region of a transistor can be divided into a linear region and a saturation region. When the voltage between the drain and the source is Vds, the voltage between the gate and the source is Vgs, and the threshold voltage is Vth, the boundary is when (Vgs−Vth) = Vds. (Vgs-Vth)> Vds
Is a linear region, and the magnitude of Vds, Vgs determines the current value. on the other hand,(
In the case of Vgs-Vth) <Vds, it is in the saturation region, and ideally, even if Vds changes,
The current value hardly changes. That is, the current value is determined only by the magnitude of Vgs.

Here, in the case of the voltage input voltage driving method, a video signal which causes the driving transistor 80302 to be fully turned on or off is input to the gate of the driving transistor 80302. That is, the driving transistor 80302 operates in a linear region.

Therefore, when the driving transistor 80302 is a video signal to be turned on, the power supply potential VDD set to the power supply line 80307 is ideally set to the first electrode of the light emitting element 80304 as it is.

That is, ideally, the voltage applied to the light emitting element 80304 is made constant, and the light emitting element 80304 is
Make the brightness obtained from Then, a plurality of subframe periods are provided in one frame period, the video signal is written to the pixel every subframe period, lighting or non-lighting of the pixel is controlled every subframe period, and the lighting is performed. By the sum of the subframe periods
Express gradation.

Note that current can be supplied to the light-emitting element 80304 by inputting a video signal which causes the driving transistor 80302 to operate in a saturation region. If the light emitting element 80304 is an element that determines the luminance in accordance with the current, a reduction in luminance due to the deterioration of the light emitting element 80304 can be suppressed. Furthermore, by making the video signal analog, the light emitting element 8030
A current corresponding to the video signal can be supplied to 4. In this case, analog gray scale driving can be performed.

FIG. 98 is a diagram showing an example of a pixel configuration to which digital time grayscale driving can be applied.

The pixel 80400 includes a switching transistor 80401 and a driving transistor 804.
A capacitor element 80403, a light emitting element 80404, and a rectifying element 80409 are provided.
The gate of the switching transistor 80401 is connected to the second scan line 80406,
The first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80405, and the second electrode (the other of the source electrode and the drain electrode) is connected to the gate of the driving transistor 80402. The gate of the driving transistor 80402 is connected to the power supply line 80407 through the capacitor 80403, and the gate is connected to the second scan line 804 through the rectifying device 80309.
10, the first electrode is connected to the power supply line 80407, and the second electrode is a light emitting element 8040.
It is connected to the 4th 1st electrode (pixel electrode). The second electrode of the light emitting element 80404 corresponds to the common electrode 80408.

Note that a low power supply potential is set to the second electrode (common electrode 80408) of the light emitting element 80404. The low power supply potential is a potential satisfying the low power supply potential <high power supply potential with reference to the high power supply potential set to the power supply line 80407, and GND, 0 V, etc. are set as the low power supply potential, for example. Also good. A light emitting element 8040 is a potential difference between the high power supply potential and the low power supply potential.
4 to apply a current to the light emitting element 80404 to cause the light emitting element 80404 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80404. Set the potential.

Note that the capacitor 80403 can be omitted by substituting the gate capacitance of the driving transistor 80402. With regard to the gate capacitance of the driving transistor 80402, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, and the like overlap with the gate electrode, or the channel region and the gate electrode And a capacitance may be formed between them.

Note that a diode-connected transistor can be used as the rectifying element 80409. Besides a diode-connected transistor, a PN junction diode, a PIN junction diode, a Schottky diode, a diode formed of carbon nanotubes, or the like may be used. The polarity of the diode-connected transistor may be N-channel or P-channel.

The pixel 80400 includes the rectifying element 80409 and the second scan line 8041 in addition to the pixels shown in FIG.
0 is added. Therefore, switching transistor 80401 shown in FIG.
, Driving transistor 80402, capacitive element 80403, light emitting element 80404, signal line 8
Reference numeral 0405, the first scan line 80406, the power supply line 80407, and the common electrode 80408 are the switching transistor 80301 and the driving transistor 803 shown in FIG.
02, capacitive element 80303, light emitting element 80304, signal line 80305, scanning line 80306
, And corresponds to the power supply line 80307 and the common electrode 80308. Therefore, the write operation and the light emission operation of FIG. 98 are the same as the write operation and the light emission operation described with reference to FIG.

The erase operation will be described. At the time of erasing operation, an H level signal is input to the second scan line 80410. Then, current flows to the rectifying element 80409, and the gate potential of the driving transistor 80402 held by the capacitor 80403 can be set to a certain potential. That is, the potential of the gate of the driving transistor 80402 can be set to a certain potential, and the driving transistor 80402 can be forcibly turned off regardless of the video signal written to the pixel.

Note that the L level signal input to the second scan line 80410 is set to a potential at which current does not flow to the rectifying element 80409 when a video signal which is not lit in the pixel is written.
The H level signal input to the second scan line 80410 is set to a potential at which the driving transistor 80402 can be turned off can be set at the gate regardless of the video signal written to the pixel.

Note that a diode-connected transistor can be used as the rectifying element 80409. Furthermore, in addition to the diode-connected transistor, a PN junction diode, P
An IN junction diode, a Schottky diode, or a diode formed of carbon nanotubes may be used. The polarity of the diode-connected transistor may be N-channel or P-channel.

FIG. 99 is a diagram showing an example of a pixel configuration to which digital time grayscale driving can be applied.

The pixel 80500 includes a switching transistor 80501 and a driving transistor 805.
A capacitor element 80503, a light emitting element 80504, and an erasing transistor 80509 are provided. In the switching transistor 80501, the gate is connected to the second scan line 80506, the first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80505, and the second electrode (the other of the source electrode and the drain electrode) is The gate of the driving transistor 80502 is connected. The gate of the driver transistor 80502 is a capacitor 8050.
3 is connected to the power supply line 80507, and the gate is connected to the first of the erasing transistor 80509.
The first electrode is connected to the power supply line 80507, and the second electrode is connected to the light emitting element 8050.
It is connected to the 4th 1st electrode (pixel electrode). The gate of the erasing transistor is connected to the second scan line 80510, and the second electrode is connected to the power supply line 80507. Light emitting element 8
The second electrode of 0504 corresponds to the common electrode 80508.

Note that a low power supply potential is set to the second electrode (common electrode 80508) of the light emitting element 80504. The low power supply potential is a potential satisfying the low power supply potential <high power supply potential with reference to the high power supply potential set to the power supply line 80507, and GND, 0 V, etc. are set as the low power supply potential, for example. Also good. A light emitting element 8050 is a potential difference between the high power supply potential and the low power supply potential.
In order to cause the light emitting element 80504 to emit light by applying a current to the light emitting element 80504, the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80504. Set the potential.

Note that the capacitor 80503 can be omitted by substituting the gate capacitance of the driving transistor 80502. With regard to the gate capacitance of the driving transistor 80502, the capacitance may be formed in a region where a source region, a drain region, an LDD region or the like overlaps with the gate electrode, or the channel region and the gate electrode And a capacitance may be formed between them.

The pixel 80500 is obtained by adding an erasing transistor 80509 and a second scan line 80510 to the pixel shown in FIG. Accordingly, the switching transistor 80501, the driving transistor 80502, the capacitor 80503, and the light emitting element 80504 illustrated in FIG.
, The signal line 80505, the first scan line 80506, the power supply line 80507, and the common electrode 8050.
Reference numeral 8 corresponds to the switching transistor 80301, driving transistor 80302, capacitive element 80303, light emitting element 80304, signal line 80305, scanning line 80306, power supply line 80307, and common electrode 80308, respectively, shown in FIG. Therefore, FIG.
The write operation and the light emission operation are the same as the write operation and the light emission operation described with reference to FIG.

The erase operation will be described. At the time of erasing operation, an H level signal is input to the second scan line 80510. Then, the erasing transistor 80509 is turned on, so that the gate of the driving transistor and the first electrode can be at the same potential. That is, the driving transistor 80502
Vgs can be 0V. Thus, the driving transistor 80502 can be forcibly turned off.

The configuration and operation of a pixel called a threshold voltage correction type will be described. The threshold voltage correction type pixel can be applied to digital time gray scale drive and analog gray scale drive.

FIG. 100 is a diagram showing an example of the configuration of a pixel called a threshold voltage correction type.

The pixel illustrated in FIG. 100 includes a driver transistor 80600, a first switch 80601, a second switch 80602, a third switch 80603, a first capacitor 80604, a second
And the light emitting element 80620. Driving transistor 806
The gate 00 is connected to the signal line 80611 through the first capacitor 80604 and the first switch 80601 in order. The gate of the driving transistor 80600 is connected to the power supply line 80612 through the second capacitive element 80605. Driving transistor 8
The first electrode of 0600 is connected to the power supply line 80612. Driving transistor 806
The second electrode 00 is connected to the first electrode of the light emitting element 80620 through a third switch 80603. A second electrode of the driving transistor 80600 is a second switch 806.
It is connected to the gate of the driving transistor 80600 through the signal 02. Light emitting element 806
The twenty second electrodes correspond to the common electrode 80621.

A low power supply potential is set to the second electrode of the light emitting element 80620. The low power supply potential is a potential satisfying the low power supply potential <high power supply potential with reference to the high power supply potential set to the power supply line 80612, and GND, 0 V, etc. are set as the low power supply potential, for example. Also good.
The potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80620 to
In order to make the light emitting element 80620 emit light by supplying a current to 620, each potential is set such that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80620. Note that the second capacitor 80605 can be omitted by substituting the gate capacitance of the driving transistor 80600. With regard to the gate capacitance of the driving transistor 80600, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, and the like overlap with the gate electrode, or the channel region and the gate electrode And a capacitance may be formed between them. Note that the first switch 80601, the second switch 80602, and the third switch 80603 are controlled to be on and off by the first scan line 80613, the second scan line 80614, and the third scan line 80614, respectively. .

In the pixel driving method shown in FIG. 100, an operation period is an initialization period, a data writing period,
The threshold acquisition period and the light emission period are divided and described.

In the initialization period, the second switch 80602 and the third switch 80603 are turned on.
Then, the potential of the gate of the driving transistor 80600 is lower than at least the potential of the power supply line 80612. At this time, the first switch 80601 may be on or off. The initialization period is not necessarily required.

In the threshold value acquisition period, a pixel is selected by the first scan line 80613. That is, the first switch 80601 is turned on, and a constant voltage is input from the signal line 80611. At this time, the second switch 80602 is turned on and the third switch 80603 is turned off. Therefore, the driving transistor 80600 is diode-connected, and the second electrode and the gate of the driving transistor 80600 are in a floating state (floating state). And
The potential of the gate of the driving transistor 80600 is a value obtained by subtracting the threshold voltage of the driving transistor 80600 from the potential of the power supply line 80612. Thus, the first capacitive element 806
The threshold voltage of the driving transistor 80600 is held at 04. Second capacitive element 8
In 0605, a potential difference between the potential of the gate of the driving transistor 80600 and the constant voltage input from the signal line 80611 is held.

A video signal (voltage) is input from the signal line 80611 in a data writing period. At this time, the first switch 80601 remains on, the second switch 80602 is off, and the third switch 80603 remains off. And, the driving transistor 806
Since the gate of 00 is in a floating state (floating state), the potential of the gate of the driving transistor 80600 is a constant voltage input to the signal line 80601 in the threshold value acquisition period and an input voltage to the signal line 80610 in the data writing period. It changes according to the potential difference with the video signal being For example, the capacitance value of the first capacitive element 80604 << second capacitive element 8
If the capacitance value is 0605, the driving transistor 80600 in the data writing period is
The potential of the gate of the transistor is determined by the potential of the signal line 80611 in the threshold value acquisition period, the potential difference between the potential of the signal line 80611 in the data writing period and the potential of the power supply line 80612, and the threshold voltage of the driving transistor 80600. Is approximately equal to the sum of the values minus.
That is, the potential of the gate of the driving transistor 80600 is equal to that of the driving transistor 8060.
It becomes the electric potential which corrected the threshold voltage of 0.

During the light emission period, the potential difference between the gate of the driver transistor 80600 and the power supply line 80612 (
A current corresponding to Vgs) flows to the light emitting element 80620. At this time, the first switch 806
01 is off, the second switch 80602 remains off, and the third switch 8060
3 turns on. Note that the current flowing to the light emitting element 80620 is a driving transistor 8060
It is constant regardless of the threshold voltage of 0.

Note that the pixel configuration shown in FIG. 100 is not limited to this. For example, a switch, a resistor, a capacitor, a transistor, a logic circuit, or the like may be added to the pixel illustrated in FIG. For example, the second switch 80602 is formed of a p-channel transistor or an n-channel transistor, the third switch 80603 is formed of a transistor of a polarity different from that of the second switch 80602, and the second switch 80602 and The third switch 80603 may be controlled by the same scan line.

The configuration and operation of a pixel called a current input type will be described. The current input positive type pixel can be applied to digital gray scale drive and analog gray scale drive.

FIG. 101 is a diagram showing an example of the configuration of a pixel called a current input type.

The pixel illustrated in FIG. 101 includes a driving transistor 80700, a first switch 80701, a second switch 80702, a third switch 80703, a capacitor 80704, and a light emitting element 80730. The gate of the driving transistor 80700 is connected to the second switch 8.
The signal line 80711 is connected to the signal line 80711 sequentially through 0702 and the first switch 80701. The gate of the driving transistor 80700 is connected to the power supply line 807 through the capacitive element 80704.
Connected to twelve. A first electrode of the driving transistor 80700 is a power supply line 80712.
It is connected to the. The second electrode of the driving transistor 80700 is a first switch 807.
It is connected to the power supply line 80712 through 01. Second of the driving transistor 80700
The electrode is connected to the first electrode of the light emitting element 80730 through the third switch 80703. The second electrode of the light emitting element 80730 corresponds to the common electrode 80731.

A low power supply potential is set to the second electrode of the light emitting element 80730. The low power supply potential is a potential satisfying the low power supply potential <high power supply potential with reference to the high power supply potential set to the power supply line 80712, and GND, 0 V, etc. are set as the low power supply potential, for example. Also good.
The potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80730 to
In order to make the light emitting element 80730 emit light by supplying a current to V. 730, each potential is set such that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80730. Note that the capacitor 80704 can be omitted by substituting the gate capacitance of the driving transistor 80700. The gate capacitance of the driving transistor 80700 may be formed in a region where a source region, a drain region, an LDD region or the like overlaps with the gate electrode, or the channel region and the gate electrode are formed. And a capacitance may be formed between them. Note that the first switch 80701, the second switch 80702, and the third switch 80703 are controlled to be on and off by the first scan line 80713, the second scan line 80714, and the third scan line 80734, respectively. .

The driving method of the pixel illustrated in FIG. 101 will be described by dividing an operation period into a data writing period and a light emitting period.

In the data writing period, a pixel is selected by the first scan line 80713. In other words,
The first switch 80701 is turned on, and current is input from the signal line 80711 as a video signal. At this time, the second switch 80702 is turned on, and the third switch 80703 is turned off. Therefore, the potential of the gate of the driving transistor 80700 corresponds to the video signal. That is, in the capacitor 80704, a voltage between the gate electrode and the source electrode of the driving transistor 80700 is held such that the driving transistor 80700 flows the same current as the video signal.

Next, in the light emission period, the first switch 80701 and the second switch 80702 are turned off, and the third switch 80703 is turned on. Therefore, a current of the same value as the video signal flows through the light emitting element 80730.

Note that the pixel configuration shown in FIG. 101 is not limited to this. For example, a switch, a resistor, a capacitor, a transistor, a logic circuit, or the like may be newly added to the pixel illustrated in FIG. For example, the first switch 80701 is formed of a P-channel transistor or an N-channel transistor, the second switch 80702 is formed of a transistor of the same polarity as the first switch 80701, and the first switch 80701 and the second switch 80701 are formed. The switch 80702 may be controlled by the same scan line. The second switch 80702 may be provided between the gate of the driving transistor 80700 and the signal line 80711.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 13)
In the present embodiment, the pixel structure of the display device will be described. In particular, a pixel structure of a display device using an organic EL element is described.

FIG. 102A is an example of a top view (layout diagram) of a pixel including two transistors in one pixel. FIG. 102B is an example of a cross-sectional view of a portion of XX ′ shown in FIG.

FIG. 102A shows the first transistor 60105, the first wiring 60106, the second wiring 60107, the second transistor 60108, the third wiring 60111, the counter electrode 6011, and the like.
2, capacitor 60113, pixel electrode 60115, partition wall 60116, organic conductive film 601
17, an organic thin film 60118 and a substrate 60119 are shown. Note that the first transistor 60105 is a switching transistor, the first wiring 60106 is a gate signal line, the second wiring 60107 is a source signal line, and the second transistor 60108 is a driving transistor. 60111 is preferably used as a current supply line.

The gate electrode of the first transistor 60105 is electrically connected to the first wiring 60106, one of the source electrode and the drain electrode of the first transistor 60105 is electrically connected to the second wiring 60107, and The other of the source electrode and the drain electrode of the first transistor 60105 is the gate electrode of the second transistor 60108 and the capacitor 60113.
It is electrically connected to one of the electrodes. Note that the gate electrode of the first transistor 60105 is formed of a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60105 can be reduced.

One of a source electrode and a drain electrode of the second transistor 60108 is a third wiring 60.
The other of the source electrode and the drain electrode of the second transistor 60108 is electrically connected to the pixel electrode 60115. Thus, the current flowing to the pixel electrode 60115 can be controlled by the second transistor 60108.

An organic conductive film 60117 is provided on the pixel electrode 60115, and an organic thin film 601 is further provided.
18 (organic compound layer) is provided. On the organic thin film 60118 (organic compound layer),
An opposing electrode 60112 is provided. Note that the counter electrode 60112 may be formed in a solid state so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60118 (organic compound layer) is transmitted through either the pixel electrode 60115 or the counter electrode 60112 and emitted.

In FIG. 102B, the case where light is emitted to the pixel electrode side, that is, the side on which a transistor or the like is formed is referred to as bottom emission, and the case where light is emitted to the counter electrode side is referred to as top emission.

In the case of bottom emission, the pixel electrode 60115 is preferably formed of a transparent conductive film.
On the contrary, in the case of top emission, the counter electrode 60112 is preferably formed of a transparent conductive film.

In a light emitting device for color display, EL elements having respective emission colors of R, G, and B may be separately painted, or single color EL elements are painted in a solid attachment form, and R, G,
The light emission of B may be obtained.

Note that the configuration shown in FIG. 102 is merely an example, and various configurations can be taken other than the configuration shown in FIG. 102 regarding the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. Further, as the light emitting layer, various elements such as a crystalline element such as an LED or an element constituted by an inorganic thin film can be used in addition to the element constituted by the illustrated organic thin film.

FIG. 103A is an example of a top view (layout diagram) of a pixel including three transistors in one pixel. FIG. 103 (B) is an example of a cross-sectional view of the portion XX 'shown in FIG. 103 (A).

FIG. 103A shows a substrate 60200, a first wiring 60201, a second wiring 60202, a third wiring 60203, a fourth wiring 60204, a first transistor 60205, a second transistor 60206, a third transistor. 60207, pixel electrode 60208, partition wall 60
And 211, an organic conductor film 60212, an organic thin film 60213, and a counter electrode 60214.
Note that the first wiring 60201 is a source signal line, the second wiring 60202 is a writing gate signal line, and the third wiring 60203 is a erasing gate signal line.
04 is preferably used as a current supply line, the first transistor 60205 as a switching transistor, the second transistor 60206 as an erasing transistor, and the third transistor 60207 as a driving transistor.

The gate electrode of the first transistor 60205 is electrically connected to the second wiring 60202, one of the source electrode and the drain electrode of the first transistor 60205 is electrically connected to the first wiring 60201, and The other of the source electrode and the drain electrode of the one transistor 60205 is electrically connected to the gate electrode of the third transistor 60207. Note that the gate electrode of the first transistor 60205 is formed of a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60205 can be reduced.

The gate electrode of the second transistor 60206 is electrically connected to the third wiring 60203, one of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the fourth wiring 60204, and The other of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the gate electrode of the third transistor 60207. Note that the gate electrode of the second transistor 60206 is formed of a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60206 can be reduced.

One of a source electrode and a drain electrode of the third transistor 60207 is a fourth wiring 60.
The other of the source electrode and the drain electrode of the third transistor 60207 is electrically connected to the pixel electrode 60208. By this, the current flowing to the pixel electrode 60208 can be controlled by the third transistor 60207.

An organic conductive film 60212 is provided on the pixel electrode 60208, and an organic thin film 602 is further provided.
13 (organic compound layer) is provided. On the organic thin film 60213 (organic compound layer),
A counter electrode 60214 is provided. Note that the counter electrode 60214 may be formed in a solid state so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60213 (organic compound layer) is transmitted through either the pixel electrode 60208 or the counter electrode 60214 and emitted.

In FIG. 103B, the case where light is emitted to the pixel electrode side, that is, the side on which a transistor or the like is formed is referred to as bottom emission, and the case where light is emitted to the counter electrode side is referred to as top emission.

In the case of bottom emission, the pixel electrode 60208 is preferably formed of a transparent conductive film.
On the contrary, in the case of top emission, the counter electrode 60214 is preferably formed of a transparent conductive film.

In a light emitting device for color display, EL elements having respective emission colors of R, G, and B may be separately painted, or single color EL elements are painted in a solid attachment form, and R, G,
The light emission of B may be obtained.

Note that the configuration shown in FIG. 103 is merely an example, and various configurations can be taken other than the configuration shown in FIG. 103 regarding the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. Further, as the light emitting layer, various elements such as a crystalline element such as an LED or an element constituted by an inorganic thin film can be used in addition to the element constituted by the illustrated organic thin film.

FIG. 104A is an example of a top view (layout view) of a pixel having four transistors in one pixel. FIG. 104 (B) is an example of a cross-sectional view of the portion XX 'shown in FIG. 104 (A).

FIG. 104A shows a substrate 60300, a first wiring 60301, a second wiring 60302, a third wiring 60303, a fourth wiring 60304, a first transistor 60305, a second transistor 60306, a third transistor. 60307, fourth transistor 60308
Pixel electrode 60309, fifth wiring 60311, sixth wiring 60312, partition wall 60321
The organic conductor film 60322, the organic thin film 60323, and the counter electrode 60324 are shown.
Note that the first wiring 60301 is a source signal line, the second wiring 60302 is a writing gate signal line, and the third wiring 60303 is a erasing gate signal line.
As a reverse bias signal line 04, the first transistor 60305 is a switching transistor, and the second transistor 60306 is a erasing transistor.
Of the fourth transistor 60308 as a driving transistor.
Preferably, the fifth wiring 60311 is used as a reverse bias transistor, the fifth wiring 60311 is used as a current supply line, and the sixth wiring 60312 is used as a reverse biasing power supply line.

The gate electrode of the first transistor 60305 is electrically connected to the second wiring 60302, one of the source electrode and the drain electrode of the first transistor 60305 is electrically connected to the first wiring 60301, and The other of the source electrode and the drain electrode of the first transistor 60305 is electrically connected to the gate electrode of the third transistor 60307. Note that the gate electrode of the first transistor 60305 is formed of a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60305 can be reduced.

The gate electrode of the second transistor 60306 is electrically connected to the third wiring 60303, and one of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the fifth wiring 60311. The other of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the gate electrode of the third transistor 60307. Note that the gate electrode of the second transistor 60306 is formed of a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60306 can be reduced.

One of a source electrode and a drain electrode of the third transistor 60307 is a fifth wiring 60.
The other of the source electrode and the drain electrode of the third transistor 60307 is electrically connected to the pixel electrode 60309. Thus, the current flowing to the pixel electrode 60309 can be controlled by the third transistor 60307.

The gate electrode of the fourth transistor 60308 is electrically connected to the fourth wiring 60304, and one of the source electrode and the drain electrode of the fourth transistor 60308 is electrically connected to the sixth wiring 60312; The other of the source electrode and the drain electrode of the four transistors 60308 is electrically connected to the pixel electrode 60309. Thus, the potential of the pixel electrode 60309 can be controlled by the fourth transistor 60308, so that a reverse bias can be applied to the organic conductive film 60322 and the organic thin film 60323. The reliability of the light-emitting element can be greatly improved by applying a reverse bias to the light-emitting element including the organic conductive film 60322, the organic thin film 60323, and the like.

An organic conductive film 60322 is provided on the pixel electrode 60309, and an organic thin film 603 is further provided.
23 (organic compound layer) is provided. On the organic thin film 60323 (organic compound layer),
An opposing electrode 60324 is provided. Note that the counter electrode 60324 may be formed in a solid state so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60323 (organic compound layer) is transmitted through either the pixel electrode 60309 or the counter electrode 60324 and emitted.

In FIG. 104B, the case where light is emitted to the pixel electrode side, that is, the side on which a transistor or the like is formed is referred to as bottom emission, and the case where light is emitted to the counter electrode side is referred to as top emission.

In the case of bottom emission, the pixel electrode 60309 is preferably formed of a transparent conductive film.
On the contrary, in the case of top emission, the counter electrode 60324 is preferably formed of a transparent conductive film.

In a light emitting device for color display, EL elements having respective emission colors of R, G, and B may be separately painted, or single color EL elements are painted in a solid attachment form, and R, G,
The light emission of B may be obtained.

The configuration shown in FIG. 104 is merely an example, and various configurations can be taken other than the configuration shown in FIG. 104 regarding the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. Further, as the light emitting layer, various elements such as a crystalline element such as an LED or an element constituted by an inorganic thin film can be used in addition to the element constituted by the illustrated organic thin film.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Fourteenth Embodiment
In this embodiment mode, a structure of an EL element is described. In particular, the structure of the organic EL element is described.

The structure of the mixed junction type EL element is described. For example, a hole injection layer made of a hole injection material, a hole transport layer made of a hole transport material, a light emitting layer made of a light emitting material, an electron transport layer made of an electron transport material, an electron injection layer made of an electron injection material And a layer in which a plurality of materials are mixed among materials such as a hole injection material, a hole transport material, a light emitting material, an electron transport material, an electron injection material, and the like, instead of a laminated structure in which A structure having a mixed layer (hereinafter, referred to as a mixed junction type EL element) is described.

FIGS. 105 (A), (B), (C) and (D) are schematic views showing the structure of the mixed junction type EL element. Note that a layer sandwiched between the anode 190101 and the cathode 190102 corresponds to an EL layer.

In FIG. 105A, the EL layer includes a hole transporting region 190103 formed of a hole transporting material, and an electron transporting region 190104 formed of an electron transporting material, and the hole transporting region 190103 is closer to the anode than the electron transporting region 190104. And a mixed region 190 comprising both a hole transporting material and an electron transporting material between the hole transporting region 190103 and the electron transporting region 190104
10 shows a configuration provided with 105.

Note that the concentration of the hole transport material in the mixed region 190105 decreases in the direction from the anode 190101 to the cathode 190102, and the concentration of the electron transport material in the mixed region 190105 increases.

The way of setting the concentration gradient can be set freely. For example, the ratio of the concentration of each functional material changes in the mixed region 190105 including both the hole transport material and the electron transport material without the presence of the hole transport region 190103 consisting only of the hole transport material (a concentration gradient Configuration). Alternatively, the hole transport region 190 consisting only of the hole transport material
103 and the electron transport region 190104 consisting only of the electron transport material do not exist, and the ratio of the concentration of each functional material changes in the mixed region 190105 including both the hole transport material and the electron transport material (having a concentration gradient) It may be a configuration. Alternatively, the concentration ratio may be varied depending on the distance from the anode or the cathode. The change of the ratio of concentration may be continuous.

In the mixed region 190105, a region 190106 to which a light emitting material is added is provided. The luminescent color of the EL element can be controlled by the luminescent material. The light emitting material can trap carriers. As the light-emitting material, various fluorescent dyes can be used in addition to a metal complex containing a quinoline skeleton, a metal complex containing a benzooxadol skeleton, a metal complex containing a benzothiazole skeleton, and the like. The emission color of the EL element can be controlled by adding these light emitting materials.

As the anode 190101, in order to inject holes efficiently, it is preferable to use an electrode material having a large work function. For example, transparent electrodes such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), ZnO, SnO ₂ or In ₂ O ₃ can be used. Alternatively, the anode 190101 may be an opaque metal material if it is not necessary to have a light transmitting property.

As a hole transport material, an aromatic amine compound or the like can be used.

As the electron transporting material, a metal complex having a quinoline derivative, 8-quinolinol or a derivative thereof as a ligand (in particular, tris (8-quinolinolite) aluminum (Alq ₃ )) or the like can be used.

As the cathode 190102, in order to inject electrons efficiently, it is preferable to use an electrode material with a small work function. Metals such as aluminum, indium, magnesium, silver, calcium, barium and lithium can be used alone. Alternatively, an alloy of these metals may be used, or an alloy of these metals and another metal may be used.

A schematic view of an EL element having a different structure from that in FIG. 105A is shown in FIG. Figure 1
The same parts as those of 05 (A) are denoted by the same reference numerals, and the description thereof is omitted.

In FIG. 105B, the light emitting material does not have a region to which the light emitting material is added. However, electron transport area 19
As a material to be added to the above, light emission can be performed by using a material having both an electron transporting property and a light emitting property (electron transporting light emitting material) such as tris (8-quinolinolite) aluminum (Alq ₃ ).

Alternatively, as a material to be added to the hole transporting region 190103, a material (hole transporting light emitting material) having both hole transporting property and light emitting property may be used.

FIG. 105C is a schematic view of an EL element having a structure different from that in FIGS. 105A and 105B.
Shown in. Note that the same portions as in FIGS. 105A and 105B are denoted by the same reference numerals,
The description is omitted.

In FIG. 105C, a hole blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital as compared with the hole transport material has a region 190107 in which the mixed region 190105 is added. . The region 190107 to which the hole blocking material is added is more negative than the region 190106 to which the light emitting material is added in the mixed region 190105.
By arranging on two sides, it is possible to increase the recombination rate of carriers and to increase the luminous efficiency. The above-described structure in which the region 190107 to which the hole blocking material is added is provided is effective particularly in an EL element using light emission (phosphorescence) by triple light excitons.

FIG. 105D is a schematic view of an EL element having a different structure from those in FIGS. 105A, 105B, and 105C. Note that the same portions as those in FIGS. 105A, 105B, and 105C are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 105D, an electron blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital as compared with the electron transporting material has a region 190108 in which the mixed region 190105 is added. The region 190108 to which the electron blocking material is added is more positive than the region 190106 to which the light emitting material is added in the mixed region 190105.
By arranging on one side, it is possible to increase the recombination rate of carriers and to increase the light emission efficiency. The above-described structure in which the region 190108 to which the electron blocking material is added is provided is particularly effective in an EL element utilizing light emission (phosphorescence) by triple light excitons.

FIG. 105 (E) is the same as FIGS. 105 (A), 105 (B), 105 (C) and 105 (D).
FIG. 7 is a schematic view showing the configuration of a mixed junction type EL element different from). In FIG. 105E, E
An example of a structure in which a region 190109 to which a metal material is added is provided in a portion of the EL layer in contact with the electrode of the L element. In FIG. 105E, the same parts as those in FIGS. 105A to 105D are denoted by the same reference numerals, and the description thereof is omitted. The configuration shown in FIG.
Alternatively, MgAg (Mg-Ag alloy) may be used as 90102, and the electron transporting region 190104 to which an electron transporting material is added may have a region 190109 to which an Al (aluminum) alloy is added in a region in contact with the cathode 190102. According to the above configuration, oxidation of the cathode can be prevented, and the electron injection efficiency from the cathode can be enhanced. Thus, the lifetime of the mixed junction type EL element can be extended. The drive voltage can also be lowered.

A co-evaporation method or the like can be used as a method of manufacturing the mixed junction type EL element.

In the mixed junction type EL element as shown in FIGS. 105A to 105E, a clear layer interface does not exist, and charge accumulation can be reduced. Thus, the life can be extended. The drive voltage can also be lowered.

Note that the configurations shown in FIGS. 105A to 105E can be implemented in any combination.

Note that the structure of the mixed junction type EL element is not limited to this. Known configurations can be used freely.

The organic material constituting the EL layer of the EL element may be a low molecular weight material or a high molecular weight material. Alternatively, both of these materials may be used. When a low molecular weight material is used as the organic compound material, the film can be formed by vapor deposition. On the other hand, in the case of using a polymer material as the EL layer, the polymer material can be dissolved in a solvent and a film can be formed by a spin coating method or an inkjet method.

The EL layer may be composed of a medium molecular material. In the present specification, the middle molecule organic light emitting material refers to an organic light emitting material having no sublimation and having a polymerization degree of about 20 or less. In the case of using a medium molecular material as the EL layer, a film can be formed by an inkjet method or the like.

Note that a low molecular weight material, a high molecular weight material, and a middle molecular weight material may be used in combination.

The EL element may be one utilizing light emission (fluorescence) from singlet excitons or one utilizing light emission (phosphorescence) from triplet excitons.

Next, a vapor deposition apparatus for manufacturing a display device will be described with reference to the drawings.

The display device may be manufactured by forming an EL layer. The EL layer is formed to include at least a part of a material that develops electroluminescence. The EL layer may be composed of a plurality of layers having different functions. In that case, the EL layer may be formed by combining layers having different functions, which are also called a hole injecting and transporting layer, a light emitting layer, and an electron injecting and transporting layer.

The configuration of a deposition apparatus for forming an EL layer on an element substrate on which a transistor is formed is shown in FIG.
It is shown in 6. The vapor deposition apparatus connects a plurality of processing chambers to the transfer chambers 190260 and 190261. In the processing chamber, a load chamber 190262 for supplying a substrate, an unloading chamber 190263 for collecting a substrate, and the like, a heat treatment chamber 190268, a plasma treatment chamber 190272, EL
As one electrode of a film formation treatment chamber 190269 to 190275 for depositing a material, an EL element,
Film formation processing chamber 1902 for forming aluminum or aluminum-based conductive film
Contains 76. Gate valves 190277a to 19027 between the transfer chamber and each processing chamber
7 m is provided, and the pressure in each processing chamber can be independently controlled to prevent cross contamination between the processing chambers.

The substrate introduced into the transfer chamber 190260 from the load chamber 190262 is carried into a predetermined processing chamber by the arm-type transfer means 190266 rotatably provided. The substrate is transported from one processing chamber to another by the transport means 190266. The transfer chamber 190260 and the transfer chamber 190261 are connected by a film formation processing chamber 190270, where the transfer means 19026
Transfer of the substrate is performed by the transfer means 6 and the transfer means 190 267.

The transfer chamber 190260 and the process chambers connected to the transfer chamber 190261 are maintained in a reduced pressure state. Therefore, in this vapor deposition apparatus, the substrate is subjected to the film formation process of the EL layer continuously without being exposed to the air. Since the display panel on which the film formation process of the EL layer is finished may be deteriorated by water vapor or the like, in this vapor deposition apparatus, a sealing process for performing a sealing process before being exposed to the air to maintain quality. A chamber 190265 is connected to the transfer chamber 190261. Since the sealing treatment chamber 190265 is under atmospheric pressure or a reduced pressure close thereto, the transfer chamber 1902 is
An intermediate processing chamber 190264 is also provided between the chamber 61 and the sealing chamber 190265. An intermediate processing chamber 190264 is provided to buffer the substrate transfer and the pressure between the chambers.

The loading chamber, the unloading chamber, the transfer chamber, and the film forming treatment chamber are provided with an exhausting means for keeping the pressure in the chamber reduced. As an evacuation means, various vacuum pumps such as a dry pump, a turbo molecular pump, and a diffusion pump can be used.

In the vapor deposition apparatus of FIG. 106, the number of treatment chambers connected to the transfer chamber 190260 and the transfer chamber 190261 and the structure thereof can be combined as appropriate depending on the stack structure of the EL elements. Below, an example of the combination is shown.

The heat treatment chamber 190268 heats and degasses the substrate on which the lower electrode, the insulating partition, and the like are formed first. The plasma treatment chamber 190272 performs rare gas or oxygen plasma treatment on the surface of the base electrode. This plasma treatment is performed to clean the surface, stabilize the surface state, and stabilize the physical or chemical state (for example, work function etc.) of the surface.

The film formation treatment chamber 190269 is a treatment chamber in which an electrode buffer layer in contact with one of the electrodes of the EL element is formed. The electrode buffer layer is capable of carrier injection (hole injection or electron injection),
It is a layer that suppresses the occurrence of a short circuit or a dark point defect of the EL element. Typically, the electrode buffer layer is an organic-inorganic mixed material and has a resistivity of 5 × 10 ⁴ to 1 × 10 ⁶ Ωcm, and 30 to 3
It is formed to a thickness of 00 nm. Note that the film formation chamber 190271 is a treatment chamber for forming a hole transport layer.

The configuration of the light emitting layer in the EL element is different between the case of emitting monochromatic light and the case of emitting white light. It is preferable that the deposition treatment chamber be disposed accordingly in the deposition apparatus. For example,
In the case of forming three types of EL elements having different emission colors in a display panel, it is necessary to form a light emitting layer corresponding to each emission color. In this case, the film formation treatment chamber 190270 is used for film formation of the first light emitting layer, and the film formation treatment chamber 190273 is used for film formation of the second light emission layer.
74 can be used for film formation of the third light emitting layer. By separating the film formation treatment chamber for each light emitting layer, mutual contamination with different light emitting materials can be prevented, and the throughput of the film formation treatment can be improved.

Note that three kinds of EL materials having different emission colors may be sequentially vapor-deposited by the film formation treatment chamber 190270, the film formation treatment chamber 190273, and the film formation treatment chamber 190274. In this case, deposition is performed using a shadow mask and shifting the mask according to the area to be deposited.

In the case of forming an EL element which emits white light, light emitting layers of different emission colors are vertically stacked. Also in that case, the element substrate can be sequentially moved in the film formation treatment chamber to form a film for each light emitting layer. Alternatively, different light emitting layers can be continuously formed in the same film formation treatment chamber.

In the film formation treatment chamber 190276, an electrode is formed over the EL layer. For the formation of the electrode, electron beam evaporation or sputtering can be applied, but preferably, resistance heating evaporation is preferably used.

The element substrate having completed formation of the electrode passes through the intermediate processing chamber 190264 and the sealing processing chamber 1902
It is carried to 65. The sealing treatment chamber 190265 is filled with an inert gas such as helium, argon, neon, or nitrogen, and a sealing plate is attached to the side of the element substrate on which the EL layer is formed under the atmosphere to seal the sealing plate. Stop. In the sealed state, an inert gas may be filled between the element substrate and the sealing plate, or a resin material may be filled. The sealing processing chamber 190265 is provided with a dispenser for drawing a sealing material, or a mechanical element such as a fixed stage or arm for fixing a sealing plate opposite to an element substrate, a dispenser for filling a resin material, a spin coater, or the like. It is done.

FIG. 107 shows the internal structure of a film formation treatment chamber. The deposition chamber is kept under reduced pressure, as shown in FIG.
Reference numeral 7 denotes a room inside which is sandwiched between the top plate 190391 and the bottom plate 190392, and shows a room kept in a reduced pressure state.

One or more evaporation sources are provided in the processing chamber. This is because it is preferable to provide a plurality of evaporation sources when depositing a plurality of layers having different compositions or co-deposit different materials. In FIG. 107, the evaporation sources 190381a, 190381b, and 190381c are attached to the evaporation source holder 190380. The evaporation source holder 190380 is held by an articulated arm 190383. The articulated arm 190383 allows the position of the evaporation source holder 190380 to be freely moved within its movable range by extension and contraction of the joint. Alternatively, the evaporation source holder 190380 is provided with the distance sensor 190382 and the evaporation source 19038
The distance between 1a-190381c and the substrate 190389 may be monitored to control the optimum distance during deposition. In that case, the articulated arm may be an articulated arm which is also displaced in the vertical direction (Z direction).

Substrate stage 190386 and substrate chuck 190387 form a pair as substrate 190389
Fix the The substrate stage 190386 may be configured to have a built-in heater so that the substrate 190389 can be heated. The substrate 190389 is fixed to the substrate stage 190386 and carried in and out due to the easing of the substrate chuck 190387. At the time of deposition, a shadow mask 190390 provided with an opening corresponding to the pattern to be deposited can be used as needed. In that case, the shadow mask 190390 includes the substrate 190389 and the evaporation source 19.
It is arranged to be placed between 0381a and 190381c. Shadow mask
Is fixed to the substrate 190 389 in close contact or at a fixed distance by a mask chuck 190 388. When alignment of the shadow mask 190390 is necessary, the camera is disposed in the processing chamber, and the alignment is performed by providing the mask chuck 190388 with positioning means for finely moving in the XY-θ direction.

The evaporation source 190381 is additionally provided with evaporation material supply means for continuously supplying the evaporation material to the evaporation source. The vapor deposition material supply means has material supply sources 190385a, 190385b, 190385c which are disposed at positions separated from the evaporation source 190381, and a material supply pipe 190384 connecting the two. Typically, the material source 190385a, 190385b
190385c are provided corresponding to the evaporation source 190381. In the case of FIG. 107,
The material supply source 190385a and the evaporation source 190381a correspond to each other. Material supply source 1903
The same applies to 85b and evaporation source 190381b, material supply source 190385c and evaporation source 190381c.

As a supply method of the deposition material, an air flow transfer method, an aerosol method, or the like can be applied. In the air flow conveying method, fine powder of a deposition material is carried in an air flow and is conveyed to an evaporation source 190381 using an inert gas or the like. The aerosol method is vapor deposition performed while transporting a raw material liquid in which a vapor deposition material is dissolved or dispersed in a solvent, forming an aerosol by a sprayer, and vaporizing a solvent in the aerosol. In any case, the evaporation source 190381 is provided with a heating means, and the deposited deposition material is evaporated to form a film on the substrate 190389. In the case of FIG. 107, the material supply pipe 19
[0384] A flexible tube 384 is composed of a thin tube having a rigidity that does not deform even under reduced pressure.

In the case of applying the airflow transfer method or the aerosol method, the film formation may be performed under a reduced pressure within the film formation treatment chamber at atmospheric pressure or lower, preferably 133 Pa to 13300 Pa.
The deposition treatment chamber can be filled with an inert gas such as helium, argon, neon, krypton, xenon, or nitrogen, or pressure can be adjusted while supplying the gas (while simultaneously discharging the gas). Note that in the deposition treatment chamber for forming an oxide film, a gas such as oxygen or nitrous oxide may be introduced to form an oxidizing atmosphere. Alternatively, a gas such as hydrogen may be introduced into the deposition treatment chamber in which the organic material is deposited to provide a reducing atmosphere.

As another method of supplying the vapor deposition material, a screw may be provided in the material supply pipe 190384 to continuously extrude the vapor deposition material toward the evaporation source.

According to this vapor deposition apparatus, even in the case of a display panel with a large screen, it is possible to form a film continuously with good uniformity. The throughput can be improved because it is not necessary to replenish the deposition material each time the evaporation source runs out of deposition material.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Fifteenth Embodiment)
In this embodiment mode, a structure of an EL element is described. In particular, the structure of the inorganic EL element is described.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film-type inorganic EL element according to the element configuration. The former has an electroluminescent layer in which particles of a light emitting material are dispersed in a binder, and the latter has an electroluminescent layer composed of a thin film of a light emitting material, although it is accelerated by a high electric field. Common in that they need electrons. In addition, as a mechanism of the light emission obtained, there exist donor-acceptor recombination type light emission using a donor level and an acceptor level, and localized type light emission using an inner shell electron transition of a metal ion. Generally, in inorganic inorganic EL, donor
In the case of acceptor recombination type luminescence, thin-film type inorganic EL elements are often localized luminescence.

A light emitting material is composed of a base material and an impurity element which is a light emission center. Light emission of various colors can be obtained by changing the impurity element to be contained. As a method for producing a light emitting material, various methods such as a solid phase method or a liquid phase method (coprecipitation method) can be used. Alternatively, a spray thermal decomposition method, a double decomposition method, a method by thermal decomposition reaction of a precursor, a reverse micelle method or a method combining these methods with high temperature baking, a liquid phase method such as a freeze drying method, or the like can be used.

In the solid phase method, a base material and an impurity element or a compound containing an impurity element are weighed and mixed in a mortar,
In this method, heating and baking are performed in an electric furnace to cause a reaction, and the base material contains an impurity element. The firing temperature is preferably 700 to 1500 ° C. When the temperature is too low, solid phase reaction does not proceed, and when the temperature is too high, the base material is decomposed. In addition, although you may bake in a powder state, it is preferable to bake in a pellet state. It requires firing at a relatively high temperature, but because it is a simple method, it has high productivity and is suitable for mass production.

The liquid phase method (co-precipitation method) is a method in which a host material or a compound containing the host material is reacted with a compound containing an impurity element or an impurity element in a solution, dried, and then fired. The particles of the light emitting material are uniformly distributed, and the reaction can proceed even with a small particle size and a low firing temperature.

As a base material used for the light emitting material, a sulfide, an oxide, or a nitride can be used. As a sulfide, for example, zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN),
Indium nitride (InN) or the like can be used. Furthermore, zinc selenide (ZnSe)
And zinc telluride (ZnTe) can be used, and calcium sulfide-gallium (CaG
It may be a mixed crystal of a ternary system such as a ₂ S ₄ ), strontium-gallium sulfide (SrGa ₂ S ₄ ), barium-gallium sulfide (BaGa ₂ S ₄ ), or the like.

As a luminescent center of localized luminescence, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) etc. can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

On the other hand, the first to form a donor level as an emission center of donor-acceptor recombination type emission
A light-emitting material containing an impurity element of and a second impurity element that forms an acceptor level can be used. For example, fluorine (F), chlorine (Cl), aluminum (Al) or the like can be used as the first impurity element. As the second impurity element, for example, copper (Cu),
Silver (Ag) or the like can be used.

In the case of synthesizing a light emitting material of donor-acceptor recombination type light emission using a solid phase method, a base material, a compound containing a first impurity element or a first impurity element, and a second impurity element or a second
The compounds containing the impurity elements of the above are each weighed, mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and as the first impurity element or the compound containing the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum sulfide (Al ₂ S) ₃ ) etc., and as a compound containing a second impurity element or a second impurity element, for example, copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), silver sulfide (Ag) ₂ S) etc. can be used. The firing temperature is preferably 700 to 1500 ° C.
When the temperature is too low, solid phase reaction does not proceed, and when the temperature is too high, the base material is decomposed. In addition, although you may bake in a powder state, it is preferable to bake in a pellet state.

As an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, the impurity element is easily diffused.
Since the solid phase reaction is facilitated, a uniform light emitting material can be obtained. Further, since an extra impurity element does not enter, a light emitting material with high purity can be obtained. Examples of the compound formed of the first impurity element and the second impurity element include copper chloride (CuCl) and silver chloride
AgCl) etc. can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and preferably in the range of 0.05 to 5 atom%.

In the case of a thin film inorganic EL, the electroluminescent layer is a layer containing the above light emitting material, and a resistance heating evaporation method,
Physical vapor deposition methods such as vacuum deposition methods such as electron beam evaporation (EB deposition), sputtering methods
Chemical vapor deposition (CVD) such as PVD), metal organic CVD method, hydride transport low pressure CVD method
D), atomic epitaxy (ALE) or the like.

FIGS. 108A to 108C each show an example of a thin film inorganic EL element which can be used as a light emitting element. In FIGS. 108A to 108C, the light emitting element includes the first electrode layer 120100.
, The electroluminescent layer 120102, and the second electrode layer 120103.

The light-emitting elements shown in FIGS. 108B and 108C each have a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. 108A. The light-emitting element illustrated in FIG. 108B includes the insulating film 120104 between the first electrode layer 120100 and the electroluminescent layer 120102, and the light-emitting element illustrated in FIG. 108C includes the first electrode layer 120100. And the electroluminescent layer 120
An insulating film 120105, a second electrode layer 120103, and an electroluminescent layer 12010.
And an insulating film 120106. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a stacked layer including a plurality of layers.

Note that in FIG. 108B, the insulating film 120104 is in contact with the first electrode layer 120100.
The second electrode layer 120103 is formed by reversing the order of the insulating film and the electroluminescent layer.
The insulating film 120104 may be provided to be in contact with

In the case of dispersion-type inorganic EL, a particulate light-emitting material is dispersed in a binder to form a film-like electroluminescent layer. Process into particles. If particles of a desired size can not be obtained sufficiently depending on the method of manufacturing a light emitting material, the particles may be processed into particles by grinding in a mortar or the like. The binder is
It is a substance for fixing a particulate light emitting material in a dispersed state and holding it in a shape as an electroluminescent layer. The light emitting material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

In the case of a dispersion-type inorganic EL, the method of forming the electroluminescent layer is a droplet discharge method capable of selectively forming the electroluminescent layer, a printing method (such as screen printing or offset printing), a coating method such as spin coating, or dipping A law, a dispenser method, etc. can also be used. The film thickness is not particularly limited, but preferably in the range of 10 to 1000 nm. In the electroluminescent layer containing the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

FIGS. 109A to 109C show an example of a dispersion-type inorganic EL element which can be used as a light-emitting element. The light-emitting element in FIG. 109A has a stacked-layer structure of a first electrode layer 120200, an electroluminescent layer 120202, and a second electrode layer 120203, and a light emitting material 120201 held by a binder in the electroluminescent layer 120202 is used. Including.

The binder can use an insulating material. As the insulating material, an organic material and an inorganic material can be used. Alternatively, a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant, polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, vinylidene fluoride or the like resin such as cyanoethyl cellulose resin can be used. Alternatively, a heat resistant polymer such as an aromatic polyamide or polybenzimidazole (polybenzimidazole) or a siloxane resin may be used. In addition, with a siloxane resin, Si-O-
It corresponds to a resin containing Si bond. Siloxane has a skeletal structure formed by the bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, as a substituent, an organic group containing at least hydrogen and a fluoro group may be used. Or
You may use resin materials, such as vinyl resins, such as polyvinyl alcohol and polyvinyl butyral, phenol resin, novolak resin, acrylic resin, melamine resin, urethane resin, oxazole resin (polybenzoxazole). In these resins, barium titanate (B
Fine particles of high dielectric constant such as aTiO ₃ ) or strontium titanate (SrTiO ₃ ) may be mixed appropriately to adjust the dielectric constant.

As the inorganic insulating material contained in the binder, silicon oxide (SiOx), silicon nitride (SiNx)
), Silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, aluminum oxide containing oxygen and nitrogen (Al ₂ O ₃ ), titanium oxide (TiO ₂ )
, BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KN)
bO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y)
It can be formed of a material selected from materials including ₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS and other inorganic insulating materials. By including an inorganic material having a high dielectric constant (by addition, etc.) in the organic material, the dielectric constant of the electroluminescent layer composed of the light emitting material and the binder can be controlled more, and the dielectric constant can be further increased. .

In the manufacturing process, the light emitting material is dispersed in a solution containing a binder. As a solvent of a solution containing a binder, a method may be appropriately selected so that the binder material can be dissolved to form an electroluminescent layer (various wet processes) and a solution having a viscosity suitable for a desired film thickness can be prepared. . For example, an organic solvent or the like can be used as the solvent. When a siloxane resin is used as the binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB), or the like can be used as a solvent.

The light-emitting elements shown in FIGS. 109B and 109C each have a structure in which an insulating film is provided between an electrode layer and an electroluminescent layer in the light-emitting element shown in FIG. 109A. The light-emitting element illustrated in FIG. 109B includes the insulating film 120204 between the first electrode layer 120200 and the electroluminescent layer 120202, and the light-emitting element illustrated in FIG. 109C includes the first electrode layer 120200. And the electroluminescent layer 120
An insulating film 120205, a second electrode layer 120203, and an electroluminescent layer 12020.
And an insulating film 120206. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a stack including a plurality of layers.

Although the insulating film 120204 is provided in contact with the first electrode layer 120200 in FIG. 109B, the insulating film and the electroluminescent layer are reversed in order and in contact with the second electrode layer 120203. A membrane 120204 may be provided.

A material that can be used for the insulating film such as the insulating film 120104 in FIG. 108 and the insulating film 120204 in FIG. 109 preferably has high insulation resistance and dense film quality.
Furthermore, it is preferable that the dielectric constant is high. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTi)
O ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., or a mixture film of these or a laminated film of two or more kinds It can be used. These insulating films can be formed by sputtering, evaporation, CVD or the like. The insulating film may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but preferably 10 to 10
It is in the range of 1000 nm.

Note that although light emission can be obtained by applying a voltage between a pair of electrode layers sandwiching an electroluminescent layer, the light emitting element can operate in any of direct current drive and alternating current drive.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Sixteenth Embodiment
In this embodiment, an example of a display device, in particular, a case where optical handling is performed, will be described.

A rear projection type display device 130100 shown in FIGS. 110A and 110B includes a projector unit 130111, a mirror 130112, and a screen panel 130101.
In addition, a speaker 130102 and operation switches 130104 may be provided. The projector unit 130111 is an enclosure 130 of the rear projection type display device 130100.
A mirror 13011 is provided at a lower portion of the light source 110 to project an image based on the image signal.
Project toward 2. The rear projection type display device 130100 has a screen panel 130101
The image projected from the back of the image is displayed.

On the other hand, FIG. 111 shows a front projection type display device 130200. The front projection type display device 130200 includes a projector unit 130111 and a projection optical system 130201. The projection optical system 130201 is configured to project an image on a screen or the like disposed on the front surface.

Rear projection type display device 130100 shown in FIG. 110, front projection type display device 1 shown in FIG.
The configuration of the projector unit 130111 applied to the 30200 will be described below.

FIG. 112 shows a configuration example of the projector unit 130111. The projector unit 130111 includes a light source unit 130301 and a modulation unit 130304.
Is equipped. A light source unit 130301 includes a light source optical system 1 including lenses.
A light source lamp 130302 is provided. The light source lamp 130302 is housed in the housing so that stray light does not diffuse. As the light source lamp 130302, for example, a high pressure mercury lamp or a xenon lamp that can emit a large amount of light is used. The light source optical system 130303 is configured by appropriately providing an optical lens, a film having a polarization function, a film for adjusting retardation, an IR film, and the like. And the light source unit 130301
Are arranged such that the radiation is incident on the modulation unit 130304. The modulation unit 130304 includes a plurality of display panels 130308, a color filter, a dichroic mirror 130305, a total reflection mirror 130306, a prism 130309, and a projection optical system 13.
It is equipped with 0310. The light emitted from the light source unit 130301 is separated into a plurality of light paths by the dichroic mirror 130305.

Each light path is provided with a color filter that transmits light of a predetermined wavelength or wavelength band, and a display panel 130308. The transmissive display panel 130308 modulates the transmitted light based on the video signal. The light of each color transmitted through the display panel 130308 has a prism 130.
The light beam is incident on the light source 309 and is displayed on the screen through the projection optical system 130310. The Fresnel lens may be disposed between the mirror and the screen. Then, the projection light projected by the projector unit 130111 and reflected by the mirror is converted into substantially parallel light by the Fresnel lens and projected on the screen.

The projector unit 130111 shown in FIG. 113 is a reflective display panel 130407,
13 shows a configuration provided with 130408 and 130409.

The projector unit 130111 shown in FIG. 113 includes a light source unit 130301 and a modulation unit 130400. The light source unit 130301 may have the same configuration as that shown in FIG. The light from the light source unit 130301 is a dichroic mirror 130.
401, 130402, and a total reflection mirror 130403 divides the light into a plurality of optical paths and enters polarization beam splitters 130404, 130405, 130406. Polarization beam splitters 130404, 130405, 130406 are provided corresponding to the reflective display panels 130407, 130408, 130409 corresponding to the respective colors. The reflective display panels 130407, 130408, and 130409 modulate the reflected light based on the video signal. The light of each color reflected by the reflective display panels 130407, 130408, and 130409 is synthesized by being incident on the prism 130309, and is projected through the projection optical system 130411.

The light emitted from the light source unit 130301 transmits only the light in the red wavelength region by the dichroic mirror 130401 and reflects the light in the green and blue wavelength regions. Furthermore, only light in the green wavelength range is reflected by the dichroic mirror 130402. The light in the red wavelength range transmitted through the dichroic mirror 130401 is reflected by the total reflection mirror 130403,
The light is incident on the polarizing beam splitter 130404, the light in the blue wavelength region is incident on the polarizing beam splitter 130405, and the light in the green wavelength region is incident on the polarizing beam splitter 130406. The polarization beam splitters 130404, 130405, and 130406 have a function of separating incident light into p-polarization and s-polarization, and have a function of transmitting only p-polarization. The reflective display panels 130407, 130408, and 130409 polarize incident light based on a video signal.

Only S-polarized light corresponding to each color is incident on the reflective display panels 130407, 130408, and 130409 corresponding to each color. Note that reflective display panels 130407 and 130408,
130409 may be a liquid crystal panel. At this time, the liquid crystal panel operates in the electric field control birefringence mode (ECB). The liquid crystal molecules are vertically aligned at an angle to the substrate. Therefore, in the reflective display panels 130407, 130408, and 130409, the display molecules are oriented so as to reflect the incident light without changing the polarization state when the pixel is in the off state. Then, when the pixel is in the on state, the alignment state of the display molecules changes, and the polarization state of the incident light changes.

The projector unit 130111 shown in FIG. 113 can be applied to the rear projection type display 130100 shown in FIG. 110 and the front projection type display 130200 shown in FIG.

The projector unit shown in FIG. 114 has a single-plate configuration. The projector unit 130111 illustrated in FIG. 114A includes a light source unit 130301 and the display panel 13.
[0507] A projection optical system 130511 and a retardation plate 130504 are provided. Projection optical system 1
Reference numeral 30511 includes one or more lenses. The display panel 130507 may be provided with a color filter.

FIG. 114 (B) shows the projector unit 13 operating in the field sequential method.
The configuration of 0111 is shown. In the field sequential method, light of each color such as red, green and blue is temporally shifted and sequentially incident on a display panel to perform color display without a color filter. In particular, when combined with a display panel with high response speed to input signal change, high definition video can be displayed. In FIG. 114 (B), the light source unit 1 is
A pivotable color filter plate 130505 provided with a plurality of color filters such as red, green, and blue is provided between the 30301 and the display panel 130508.

The projector unit 130111 shown in FIG. 114C is a color display method.
The configuration of a color separation system using a macro lens is shown. In this method, a microlens array 130506 is provided on the light incident side of the display panel 130509, and color display is realized by illuminating light of each color from each direction. The projector unit 130111 adopting this method has a feature that light from the light source unit 130301 can be effectively used because the loss of light due to the color filter is small. Figure 114.
The projector unit 130111 shown in (C) includes a dichroic mirror 130501, a dichroic mirror 130502, and a red light dichroic mirror 130503 so as to illuminate the light of each color with respect to the display panel 130509 from each direction.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

Seventeenth Embodiment
In the present embodiment, an example of the electronic device will be described.

FIG. 115 illustrates a display panel module in which the display panel 900101 and the circuit substrate 900111 are combined. The display panel 900101 includes a pixel portion 900102, a scan line driver circuit 900103, and a signal line driver circuit 900104. For example, a control circuit 900112, a signal division circuit 900113, and the like are formed on the circuit board 900111. The display panel 900101 and the circuit substrate 900111 are connected by connection wiring 900114. An FPC or the like can be used for the connection wiring.

In the display panel 900101, a pixel portion 900102 and a part of peripheral drive circuits (a drive circuit having a low operating frequency among a plurality of drive circuits) are integrally formed on a substrate using a transistor, and a part of peripheral drive circuits (a plurality of peripheral drive circuits Among the drive circuits, a drive circuit with a high operating frequency is formed on an IC chip, and the IC chip is a display panel 9001 with COG (Chip On Glass) or the like.
It may be implemented on 01. By this, the area of the circuit substrate 900111 can be reduced, and a small display device can be obtained. Or, TAB the IC chip (Tape Aut
o Bonding) or a printed circuit board may be used to mount the display panel 900101. By this, the area of the display panel 900101 can be reduced, so that a display device with a small frame size can be obtained.

For example, in order to reduce power consumption, a pixel portion is formed using a transistor on a glass substrate, all peripheral driving circuits are formed on an IC chip, and the IC chip is mounted on a display panel by COG or TAB. May be

A television receiver can be completed with the display panel module shown in FIG. FIG. 116 is a block diagram showing a main configuration of a television receiver. Tuner 9002
The numeral 01 receives a video signal and an audio signal. The video signal is transmitted from a video signal amplifier circuit 900202,
A video signal processing circuit 900203 that converts signals output from the video signal amplifier circuit 900202 into color signals corresponding to red, green, and blue, and a control circuit 900212 to convert the video signal into an input specification of the drive circuit. Processed by Control circuit 9002
12 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 900213 may be provided on the signal line side, and an input digital signal may be divided into m (m is a positive integer) and supplied.

Of the signals received by the tuner 900201, an audio signal is an audio signal amplifier circuit 900205.
, And the output thereof is supplied to the speaker 900207 through the audio signal processing circuit 900206. The control circuit 900208 inputs the control information of the receiving station (reception frequency) and the volume.
0209, and sends a signal to the tuner 900201 or the audio signal processing circuit 900206.

FIG. 11 shows a television receiver incorporating a display panel module different from that of FIG. 116.
7 (A). In FIG. 117 (A), the display screen 9 contained in the housing 900301.
00302 is formed of a display panel module. Note that the speaker 900303, the operation switch 900304, the input unit 900305, the sensor 900306 (force, displacement, position,
Velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness,
An electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or a function of measuring infrared rays), a microphone 900307, and the like may be provided as appropriate.

FIG. 117 (B) shows a television receiver in which only a display can be carried wirelessly. A battery and a signal receiver are housed in a housing 900312, and the battery includes a display portion 900313, a speaker portion 900317, a sensor (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, Magnetic, temperature, chemistry, voice, time, hardness, electric field, current,
(Including the function of measuring voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared) 900319 and microphone 900320 are driven. Battery charger 9
Repetitive charging is possible at 00310. The charger 900310 can transmit and receive video signals, and can transmit the video signals to a signal receiver of the display.
The device illustrated in FIG. 117B is controlled by the operation key 900316. Alternatively, the device shown in FIG. 117 (B) can operate charger 900 by operating operation key 900316.
It is possible to send a signal to 0310. That is, it may be a video and audio interactive communication device. Alternatively, the device illustrated in FIG. 117B transmits a signal to the charger 900310 by operating the operation key 900316 and causes another electronic device to receive a signal that can be transmitted by the charger 900310. Communication control of the electronic device is also possible. That is, it may be a general purpose remote control device. In addition, the input means 900318 etc. may be provided suitably. Note that the contents (may be a part) described in each figure of the present embodiment
It can be applied to 0313.

FIG. 118A illustrates a module in which the display panel 900401 and the printed wiring board 900402 are combined. The display panel 900401 includes a pixel portion 900403 in which a plurality of pixels are provided, a first scan line driver circuit 900404, and a second scan line driver circuit 9004.
A signal line driver circuit 900406 which supplies a video signal to the selected pixel may be provided.

The printed wiring board 900402 includes a controller 900407 and a central processing unit (CPU
) 900408, memory 900409, power supply circuit 900410, audio processing circuit 90041).
And the transmission / reception circuit 900412. The printed wiring board 900402 and the display panel 900401 are connected by a flexible wiring board (FPC) 900413. A flexible printed circuit (FPC) 900413 may be provided with a storage capacitor, a buffer circuit, and the like to prevent generation of noise in a power supply voltage or a signal and an increase in rise time of the signal. Note that the controller 900407, the audio processing circuit 900411, the memory 900409, the central processing unit (CPU) 900408, the power supply circuit 900410, and the like are
The display panel 900401 can also be mounted using a COG (Chip On Glass) method. By the COG method, the size of the printed wiring board 900402 can be reduced.

An interface (I / F) unit 900414 provided on the printed wiring board 900402
Input and output of various control signals. Then, an antenna port 900415 for transmitting and receiving a signal to and from the antenna is provided in the printed wiring board 900402.

FIG. 118 (B) shows a block diagram of the module shown in FIG. 118 (A). This module includes, as a memory 900409, a VRAM 900416, a DRAM 900417, a flash memory 900418, and the like. Data of an image to be displayed on the panel is stored in the VRAM 900416, image data or audio data is stored in the DRAM 900417, and various programs are stored in the flash memory.

The power supply circuit 900410 supplies power for operating the display panel 900401, the controller 900407, the central processing unit (CPU) 900408, the audio processing circuit 900411, the memory 900409, and the transmitting and receiving circuit 900412. However, depending on the specification of the panel, the power supply circuit 900410 may be provided with a current source.

A central processing unit (CPU) 900408 includes a control signal generation circuit 900420 and a decoder 90.
It has an interface (I / F) unit 900419 for the central processing unit (CPU) 900408, and the like. Central processing unit (CPU) via interface (I / F) unit 900419
The various signals input to 900408 are temporarily stored in the register 900422, and then input to the arithmetic circuit 900423, the decoder 900421, and the like. The arithmetic circuit 900423 performs an operation based on the input signal, and specifies a place to which various instructions are sent. While decoder 9
The signal input to 00421 is decoded and input to the control signal generation circuit 900420. The control signal generation circuit 900420 generates a signal including various instructions based on the input signal, and a place designated by the arithmetic circuit 900423, specifically, the memory 900409,
The signal is sent to the transmission / reception circuit 900412, the audio processing circuit 900411, the controller 900407, and the like.

Memory 900409, transmission / reception circuit 900412, audio processing circuit 900411, and controller 900407 operate in accordance with the received instructions. The operation will be briefly described below.

A signal input from the input unit 900425 has an interface (I / F) unit 90041.
A central processing unit (CPU) 9004 mounted on the printed wiring board 900402 via
Sent to 08. The control signal generation circuit 900420 converts the image data stored in the VRAM 900416 into a predetermined format according to a signal sent from the input unit 900425 such as a pointing device or a keyboard, and sends the converted data to the controller 900407.

The controller 900407 has a central processing unit (CPU) 9004 in accordance with panel specifications.
Data processing is applied to the signal including the image data sent from 08, and the display panel 90040
Supply to 1. The controller 900407 performs Hs based on the power supply voltage input from the power supply circuit 900410 or various signals input from the central processing unit (CPU) 900408.
A ync signal, a Vsync signal, a clock signal CLK, an alternating voltage (AC Cont), and a switching signal L / R are generated and supplied to the display panel 900401.

In the transmitting and receiving circuit 900412, a signal transmitted and received as a radio wave is processed in the antenna 900428. Specifically, an isolator, a band pass filter, a VCO (Volt (Vot)
age Controlled Oscillator), LPF (Low Pass)
High frequency circuits such as a filter, a coupler, and a balun. Transmission / reception circuit 90
Among the signals transmitted and received in 0412, the signal including audio information is a central processing unit (CPU
And the voice processing circuit 900411 according to the instruction from 900408).

A signal including audio information sent according to an instruction of the central processing unit (CPU) 900408 is demodulated into an audio signal in an audio processing circuit 900411 and sent to a speaker 900427. The audio signal sent from the microphone 900426 is modulated in the audio processing circuit 900411, and the transmitting / receiving circuit 9 is instructed in accordance with an instruction from the central processing unit (CPU) 900408.
It is sent to 00412.

Controller 900407, central processing unit (CPU) 900408, power supply circuit 90041
0, the audio processing circuit 900411, and the memory 900409 can be mounted as a package of this embodiment.

Of course, the present embodiment is not limited to a television receiver, and is used as a display medium for a personal computer, an information display board at a railway station or airport, an advertisement display board at a street, etc. It can apply.

Next, referring to FIG. 119, a configuration example of a mobile phone will be described.

The display panel 900501 is detachably incorporated in the housing 900530. The shape or size of the housing 900530 can be changed as appropriate in accordance with the size of the display panel 900501. A housing 900530 to which the display panel 900501 is fixed is inserted into a printed circuit board 900531 and assembled as a module.

The display panel 900501 is connected to the printed substrate 900531 through the FPC 900513. The printed circuit board 900531 includes a speaker 900532 and a microphone 900.
533, a transmission / reception circuit 900534, a signal processing circuit 900 including a CPU, a controller, and the like
535 and sensors 900 541 (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, It has a function to measure humidity, inclination, vibration, smell or infrared). Such a module, an input unit 900536, and a battery 900537 are combined and stored in a housing 900539. A pixel portion of the display panel 900501 is a housing 900539.
It arranges so that it may be visible from the opening window formed in.

In the display panel 900501, a pixel portion and a part of peripheral drive circuits (a drive circuit having a low operating frequency among a plurality of drive circuits) are integrally formed on a substrate using a transistor, and a part of peripheral drive circuits (a plurality of drive circuits). Driver circuit with high operating frequency) is formed on the IC chip, and the IC
The chip may be mounted on the display panel 900501 by COG (Chip On Glass). Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Auto Bonding) or a printed circuit board. With such a configuration, power consumption of the display device can be reduced, and the usage time per charge of the mobile phone can be extended. Cost reduction of the mobile phone can be achieved.

The mobile phone illustrated in FIG. 119 has a function of displaying various types of information (still images, moving images, text images, and the like). It has a function of displaying a calendar, date or time on a display unit. It has a function of operating or editing the information displayed on the display unit. Various software (program)
Has a function to control the process. It has a wireless communication function. The wireless communication function is used to make a call to another mobile phone, fixed telephone or voice communication device. It has a function of connecting to various computer networks using a wireless communication function. The wireless communication function is used to transmit or receive various data. The vibrator has a function of operating in response to an incoming call, data reception, or an alarm. It has a function of generating sound in response to an incoming call, data reception, or an alarm. Note that the functions of the mobile phone illustrated in FIG. 119 are not limited to this, and can have various functions.

The mobile phone illustrated in FIG. 120 includes operation switches 900604 and a microphone 90060.
5, a main body (A) 900601, a display panel (A) 900608, a display panel (B) 900609, a speaker 900606, a sensor 900611 (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, Light, liquid, magnetism, temperature, chemical, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, infrared, etc.), input means 900612, etc. Body equipped with (B) 900602
And are connected so as to be openable and closable at a hinge 900610. The display panel (A) 900608 and the display panel (B) 900609, together with the circuit board 900607, are main body (B) 900602.
In the case 900603 of the Display panel (A) 900608 and display panel (A)
B) A pixel portion 900609 is disposed so as to be visible from an opening window formed in a housing 900603.

The display panel (A) 900608 and the display panel (B) 900609 are connected to the mobile phone 90.
Specifications such as the number of pixels can be set as appropriate in accordance with the function of 0600. For example, the display panel (A) 900608 can be combined as a main screen and the display panel (B) 900609 can be combined as a sub screen.

The mobile phone according to the present embodiment can be changed into various modes according to the function or application. For example, an imaging element may be incorporated in the hinge 900610 to make a mobile phone with a camera. Even when the operation switches 900604, the display panel (A) 900608, and the display panel (B) 900609 are housed in one case, the above-described effects can be obtained. Even if the configuration of the present embodiment is applied to an information display terminal provided with a plurality of display units, similar effects can be obtained.

The mobile phone illustrated in FIG. 120 has a function of displaying various pieces of information (still images, moving images, text images, and the like). It has a function of displaying a calendar, date or time on a display unit. It has a function of operating or editing the information displayed on the display unit. Various software (program)
Has a function to control the process. It has a wireless communication function. The wireless communication function is used to make a call to another mobile phone, fixed telephone or voice communication device. It has a function of connecting to various computer networks using a wireless communication function. The wireless communication function is used to transmit or receive various data. The vibrator has a function of operating in response to an incoming call, data reception, or an alarm. It has a function of generating sound in response to an incoming call, data reception, or an alarm. Note that the mobile phone illustrated in FIG. 120 can have various functions without limitation to the above.

The contents (or part of the contents) described in each drawing of this embodiment can be applied to various electronic devices. Specifically, the present invention can be applied to a display portion of an electronic device. As such electronic devices, video cameras, digital cameras, goggle type displays, navigation systems, sound reproduction devices (car audios, audio components, etc.), computers, game machines, portable information terminals (mobile computers, mobile phones, portable games, etc.) Machine or electronic book etc)
, An image reproduction apparatus provided with a recording medium (specifically, Digital Versatile D
An apparatus provided with a display capable of reproducing a recording medium such as isc (DVD) and displaying the image, and the like.

FIG. 121A shows a display, which is a housing 900711, a support stand 900712, a display portion 900713, an input means 900714, sensors (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetic) , Including temperature, chemical, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, infrared or other function) 9
00715, microphone 900716, speaker 900717, operation key 90071
8 includes an LED lamp 900719 and the like. The display illustrated in FIG. 121A has a function of displaying various information (still image, moving image, text image, and the like) on the display portion. Figure 1
The function of the display shown in 21 (A) is not limited to this, and can have various functions.

FIG. 121B shows a camera, which is a main body 900731, a display portion 900732, an image receiving portion 900.
733, operation key 900734, external connection port 900735, shutter 900736
, Input means 900737, sensor 900738 (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical, voice, time, hardness, electric field, current, voltage, power, radiation Flow rate, humidity, inclination, vibration, smell or the ability to measure infrared rays),
It includes a microphone 900739, a speaker 900740, an LED lamp 900741, and the like. The camera illustrated in FIG. 121 (B) has a function of capturing a still image. It has a function to shoot video. It has a function to automatically correct a captured image (still image, moving image). It has a function of storing a captured image in a recording medium (external or internal to a digital camera). It has a function of displaying a photographed image on a display unit. Note that the functions of the camera illustrated in FIG. 121B are not limited to this, and can have various functions.

FIG. 121 (C) is a computer, which has a main body 900751, a housing 900752, a display portion 9, and the like.
00753, keyboard 900754, external connection port 900755, pointing device 900756, input means 900757, sensor (force, displacement, position, velocity, acceleration,
Includes functions to measure angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, time, hardness, electric field, current, voltage, power, radiation, flow, humidity, inclination, vibration, odor or infrared light And a microphone 900759, a speaker 900760, an LED lamp 900761, a reader / writer 900762, and the like. The computer illustrated in FIG. 121C has a function of displaying various information (a still image, a moving image, a text image, and the like) on the display portion. It has a function to control processing by various software (programs). It has a communication function such as wireless communication or wired communication. It has a function of connecting to various computer networks using a communication function. It has a function of transmitting and receiving various data using a communication function. Note that functions of the computer illustrated in FIG. 121C are not limited to this, and can have various functions.

FIG. 128A shows a mobile computer, which has a main body 901411 and a display portion 901412.
, Switch 901413, operation key 901414, infrared port 901415, input means 901416, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness (Including a function of measuring electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared)) 901417, microphone 901418, speaker 901419, LED lamp 901420 and the like. Figure 12
The mobile computer shown in FIG. 8 (A) has a function of displaying various information (still images, moving images, text images, etc.) on the display portion. The display unit has a touch panel function. The display unit has a function of displaying a calendar, date, time, and the like. It has a function to control processing by various software (programs). It has a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. The wireless communication function is used to transmit or receive various data. Note that the mobile computer illustrated in FIG. 128A can have various functions without limitation to the above.

FIG. 128 (B) shows a portable image reproducing apparatus (for example, a DVD reproducing apparatus) provided with a recording medium.
The main body 901431, the housing 901432, the display portion A 901433, and the display portion B 901
434, recording medium (DVD or the like) reading portion 901435, operation key 901436, speaker portion 901437, input unit 901438, sensor 901439 (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, Temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, smell, or infrared rays (including a function of measuring), microphone 901440, LED lamp 901441, and the like. The display portion A 901433 mainly displays image information, and the display portion B 901 434 can mainly display text information.

FIG. 128C shows a goggle type display, which has a main body 901451 and a display portion 90145.
2, earphone 901453, support portion 901454, input means 901455, sensor (force,
Displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemistry, voice,
(Including a function of measuring time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor or infrared light) 901456, a microphone 901457, a speaker 901458, and the like. The goggle type display shown in FIG. 128 (C) has a function of displaying an image (a still image, a moving image, a text image, or the like) acquired from the outside on a display portion. Note that
The goggle type display shown in FIG. 128 (C) has a variety of functions without limitation to the above.

FIG. 129A shows a portable game machine, which includes a housing 901511, a display portion 901512, a speaker portion 901513, operation keys 901514, a storage medium insertion portion 901515, and input means 90.
1516, sensor (force, displacement, position, velocity, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemical, voice, time, hardness, electric field, current, voltage, electric power, radiation, flow rate, humidity , Including the function of measuring inclination, vibration, smell or infrared) 901517, a microphone 901518, an LED lamp 901519, and the like. The portable game machine illustrated in FIG. 129A has a function of reading out a program or data recorded in a recording medium and displaying the read program or data on the display portion. It has a function of performing wireless communication with another portable game machine to share information. Note that the portable game machine illustrated in FIG. 129A can have various functions without limitation to the above.

FIG. 129B shows a digital camera with a television receiver function, and a main body 901531, a display portion 901532, operation keys 901533, a speaker 901534, and a shutter 901535.
, Image receiving unit 901536, antenna 901537, input unit 901538, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation number, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current Voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or a function to measure infrared rays) 901539, a microphone 901540, an LED lamp 901541, and the like. The digital camera with a television receiver illustrated in FIG. 129B has a function of capturing a still image. It has a function to shoot video. It has a function to automatically correct the captured image. It has a function of acquiring various information from the antenna. It has a function of storing a photographed image or information acquired from an antenna. It has a function of displaying a photographed image or information acquired from an antenna on a display portion. Note that the digital camera with a television receiver illustrated in FIG. 121H has a variety of functions without limitation to the above.

FIG. 130 shows a portable game machine, and a housing 901611, a first display portion 901612, a second display portion 901613, a speaker portion 901614, an operation key 901615, and a recording medium insertion portion 90.
1616, input means 901617, sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation number, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power,
Containing functions to measure radiation, flow rate, humidity, inclination, vibration, odor or infrared) 901
618, a microphone 901619, an LED lamp 901620 and the like. The portable game machine shown in FIG. 130 has a function of reading out a program or data recorded in a recording medium and displaying the same on a display portion. It has a function of performing wireless communication with another portable game machine to share information. Note that the portable game machine illustrated in FIG. 130 can have various functions without limitation to the above.

As shown in FIGS. 121 (A) to (C), FIGS. 128 (A) to (C), FIGS. 129 (A) to (C), and FIG. 130, the electronic device displays some information. It has a display portion. The electronic device can include a display portion having a wide viewing angle.

Next, application examples of the semiconductor device will be described.

FIG. 122 shows an example in which a semiconductor device is provided integrally with a structure. FIG. 122 includes a housing 900810, a display portion 900811, a remote control device 900812 which is an operation portion, a speaker portion 900813, and the like. The semiconductor device is integrated with a building as a wall-mount type, and can be installed without requiring a large installation space.

FIG. 123 shows another example in which the semiconductor device is provided integrally with the structure in the structure.
The display panel 900901 is attached integrally with the unit bus 900902, and a bather can view the display panel 900901. The display panel 900901 has a function of displaying information when operated by a bather. It has a function that can be used as an advertisement or entertainment means.

The semiconductor device is not limited to the side wall of unit bus 900902 shown in FIG.
It can be installed in various places. For example, it may be integrated with part of the mirror surface or the bathtub itself. At this time, the shape of the display panel 900901 may be adjusted to the shape of a mirror surface or a bath.

FIG. 124 shows another example in which the semiconductor device is provided integrally with a structure. The display panel 901002 is attached to be curved according to the curved surface of the columnar body 901001.
Here, the columnar body 901001 will be described as a utility pole.

A display panel 901002 shown in FIG. 124 is provided at a position higher than the human viewpoint.
By installing the display panel 901002 on a structure which is repeatedly forested outdoors like a telephone pole, an advertisement can be provided to an unspecified number of viewers. Here, the display panel 90100
In No. 2 it is easy to display the same image and to switch the image instantaneously under external control, so extremely efficient information display and advertising effects can be expected. By providing the self-luminous display element in the display panel 901002, it can be said that it is useful as a highly visible display medium even at night. By installing the display panel 901002 on a power pole, it is easy to secure a power supply unit of the display panel 901002. In the event of an emergency such as a disaster, it can also be a means to quickly and accurately inform victims.

Note that as the display panel 901002, for example, a display panel can be used which displays an image by providing a switching element such as an organic transistor on a film-like substrate and driving the display element.

In the present embodiment, although a wall, a columnar body, and a unit bus are taken as an example of a structure, the present embodiment is not limited to this, and semiconductor devices can be installed in various structures.

Next, an example in which the semiconductor device is provided integrally with the movable body is described.

FIG. 125 is a view showing an example in which the semiconductor device is provided integrally with a car. The display panel 901102 is integrally attached to a car body 901101 of a car, and can display on-demand information input from the operation of the car body or the inside and outside of the car body. In addition, you may have a navigation function.

Note that the semiconductor device can be installed not only in the vehicle body 901101 shown in FIG. 125 but also in various places. For example, it may be integrated with a glass window, a door, a handle, a shift lever, a seat, a rearview mirror and the like. At this time, the shape of the display panel 901102 may be in accordance with the shape of the display panel.

FIG. 126 is a view showing an example in which the semiconductor device is provided integrally with the train car.

FIG. 126 (a) is a view showing an example in which a display panel 901202 is provided on the glass of a door 901201 of a train car. Compared with the conventional paper advertisement, there is an advantage that the labor cost required at the time of advertisement switching is not incurred. The display panel 901202 is capable of instantaneously switching the image displayed on the display portion by a signal from the outside, so, for example, switches the image of the display panel at each time zone when the passenger layer of train passengers You can expect more effective advertising effects.

FIG. 126 (b) shows the glass window 901203 in addition to the glass of the door 901201 of the train car.
, And a diagram showing an example in which a display panel 901202 is provided on a ceiling 901204.
As described above, since the semiconductor device can be easily installed in a place where the installation has been difficult conventionally, an effective advertising effect can be obtained. The semiconductor device can instantaneously switch the image displayed on the display unit by a signal from the outside, so cost and time at the time of advertisement switching can be reduced, and more flexible advertisement operation and information transmission can be performed. It becomes possible.

Note that the semiconductor device can be installed not only in the door 901201, the glass window 901203, and the ceiling 901204 illustrated in FIG. 126, but also in various places. For example, it may be integrated with a strap, seat, bench, floor or the like. At this time, the shape of the display panel 901202 may be in accordance with the shape of the display panel.

FIG. 127 is a diagram showing an example in which the semiconductor device is provided integrally with the passenger plane.

Fig. 127 (a) shows the display panel 90130 on the ceiling 901301 at the top of the seat of the passenger plane.
It is the figure shown about the shape at the time of use when 2 is provided. The display panel 901302 is
The ceiling 901301 and the hinge portion 901303 are integrally attached, and expansion and contraction of the hinge portion 901303 enables a passenger to view the display panel 901302. The display panel 901302 has a function of displaying information when operated by a passenger. It has a function that can be used as an advertisement or entertainment means. As shown in FIG. 127 (b), the hinge portion is bent and stored in the ceiling 901301, whereby safety during takeoff and landing can be taken into consideration. Note that
By lighting the display element of the display panel in an emergency, it can also be used as an information transfer means and a guide light.

Note that the semiconductor device can be installed not only in the ceiling 901301 shown in FIG. 127 but also in various places. For example, it may be integrated with a seat, a seat table, an armrest, a window or the like. A large display panel that many people can view simultaneously may be installed on the wall of the machine. At this time, the shape of the display panel 901302 may be in accordance with the shape of the display panel.

In the present embodiment, the moving body is exemplified by a train car body, an automobile body, and an airplane body, but the invention is not limited thereto, and a motorcycle, a four-wheel automobile (including a car, a bus, etc.)
It can be installed on various things such as trains (including monorails and railways), ships, etc. The semiconductor device can instantaneously switch the display of the display panel in the moving body by a signal from the outside. Therefore, by installing the semiconductor device on the moving body, the moving body can be targeted at an unspecified number of customers. It can be used for applications such as advertising display boards, information display boards in the event of a disaster, etc.

Note that although the present embodiment has been described using various figures, the contents described in each figure (
Some parts may be applied to, or combined with, the contents described in another figure (or some parts).
Or, replacement can be freely performed. Furthermore, in the figures described above, more figures can be constructed by combining other parts with respect to each part.

Similarly, the contents (or a part) described in each figure of this embodiment can be applied to, combined with, or replaced with the contents (or a part) described in the figure of another embodiment. Can do it freely. Furthermore, in the drawings of the present embodiment, more parts can be configured by combining the parts of the other embodiments with respect to the respective parts.

Note that this embodiment is an example in the case of embodying the contents (may be a part) described in the other embodiments, an example in the case of slight modification, an example in the case of changing a part, an improvement An example of the case,
An example of the case described in detail, an example of the case of application, an example of the relevant part, and the like are shown. Therefore, the contents described in the other embodiments can be freely applied to, combined with, or replaced with this embodiment.

100 pixels
101 switch
102 switch
103 Liquid crystal elements
103 potential V
104 Liquid crystal element
105 Liquid crystal element
106 capacitive element
107 capacitive element
108 Wiring
109 Wiring
110 wiring
111 common electrode
150 pixels
151 switch
152 switch
153 liquid crystal elements
154 Liquid crystal elements
155 Liquid crystal elements
156 capacitive element
157 capacitive element
158 Wiring
159 wiring
160 wiring
161 capacitive element
200 pixels
201 switch
202 switch
203 switch
203 transistor
204 Liquid crystal element
205 Liquid crystal elements
206 Liquid crystal element
207 capacitive element
208 capacitive element
209 wiring
210 wiring
211 wiring
253 transistor
260 wiring
261 Wiring
262 wiring
301 switch
302 switch
303 transistor
309 Wiring
310 wiring
313 Wiring
353 transistor
356 Liquid crystal elements
359 capacitive element
364 wiring
400 pixels
401 switch
402 switch
403 Liquid crystal element
404 Liquid Crystal Element
405 Liquid Crystal Element
406 capacitive element
407 capacitive element
408 capacitive element
409 capacitive element
410 wiring
411 Wiring
412 wiring
413 wiring
414 wiring
415 Wiring
416 common electrode
417 capacitive element
450 pixels
451 switch
452 switch
453 Liquid Crystal Element
454 Liquid crystal element
455 Liquid crystal element
456 capacitive element
457 capacitive element
458 wiring
459 wiring
460 wiring
461 common electrode
463 capacity line
465 capacity line
500 pixels
501 switch
502 switch
503 Liquid Crystal Element
504 Liquid Crystal Element
505 Liquid crystal element
506 Liquid Crystal Element
507 capacitive element
508 capacitive element
509 Capacitive element
510 Wiring
511 wiring
512 wiring
550 pixels
551 switch
552 switch
553 switch
554 Liquid crystal element
555 Liquid crystal element
556 Liquid crystal element
557 Liquid crystal element
558 capacitive element
559 capacitive element
560 wiring
561 wiring
562 wiring
563 wiring
565 capacitive element
566 capacitive element
572 capacitive element
584 capacitive element
600 pixels
601 switch
602 switch
603 Liquid crystal element
604 Liquid crystal element
605 Liquid crystal element
606 voltage divider
607 Voltage divider
608 wiring
609 wiring
610 Wiring
650 pixels
651 switch
652 switch
653 Liquid Crystal Element
654 Liquid Crystal Element
655 liquid crystal elements
656 voltage divider
657 Voltage divider
658 switch
659 switch
660 Wiring
661 wiring
662 wiring
700 pixels
701 switch
702 switch
703 Liquid Crystal Element
704 Liquid crystal element
705 Liquid crystal element
706 transistor
707 transistor
708 wiring
709 wiring
710 Wiring
750 pixels
751 switch
752 switch
753 Liquid Crystal Element
754 liquid crystal elements
755 Liquid crystal element
756 transistor
757 transistor
758 wiring
759 wiring
760 wiring
761 Wiring
762 capacitive element
763 capacitive element
764 capacitive element
800 pixels
801 switch
802 switch
803 transistor
803 Liquid crystal element
804 transistor
804 Liquid crystal element
805 Liquid crystal element
806 Liquid crystal element
807 Liquid crystal element
808 wiring
809 wiring
810 Wiring
811 wiring
850 pixels
851 switch
852 switch
853 Liquid Crystal Element
854 Liquid crystal element
855 Liquid crystal element
856 transistor
857 transistor
858 wiring
859 wiring
860 wiring
861 capacitive element
900 pixels
901 switch
902 switch
903 Liquid crystal element
904 Liquid crystal element
905 Liquid crystal element
906 Liquid crystal element
907 transistor
908 transistor
909 transistor
910 Wiring
911 wiring
912 wiring
101N switch
101P switch
102N switch
102P switch
105a Liquid crystal element
105b Liquid crystal element
151N switch
152N switch
1911 Signal line drive circuit
1912 Scanning line drive circuit
1913 pixel area
1914 pixels
201N switch
202N switch
211A wiring
251N switch
252N switch
301N switch
302N switch
401N switch
402N switch
451N switch
452N switch
501N switch
502N switch
551N switch
552N switch
601N switch
602N switch
651N switch
652N switch
701N switch
702N switch
751N switch
752N switch
801N switch
802N switch
851N switch
852N switch
901N switch
902N switch
107320 FPC
107321 IC chip
170100 substrate
170101 pixel area
170102 pixels
170103 Scan line side input terminal
170104 Signal line side input terminal
170105 Scanning line drive circuit
Signal line driver circuit
170200 FPC
170201 IC chip
170300 substrate
170301 pixel area
170303 Signal line driver circuit
170310 Substrate
170320 FPC
170321 Sealing material
170401 IC chip
170302a scan line driver circuit
170302b scan line driver circuit
170501a IC chip
170501b IC chip
180100 Display Unit
180101 pixel area
180102 pixels
180103 Signal line drive circuit
180104 scanning line drive circuit
180701 image
180702 image
180703 image
180704 image
180705 image
180711 images
180712 image
180713 images
180714 images
180715 image
180716 images
180717 image
180721 images
180722 image
180723 image
180724 image
180725 image
180801 image
180802 image
180803 image
180804 area
180805 area
180806 area
180811 images
180812 images
180813 images
180814 area
180815 area
180816 area
180821 images
180822 images
180823 images
180824 area
180825 area
180826 area
180831 images
180832 images
180833 images
180834 area
180835 area
180836 area
180841 area
180842 points
180901 image
180902 image
180903 image
180904 area
180905 area
180906 area
180907 range
180 908 range
180909 vector
180910 displacement vector
180911 image
180912 images
180913 images
180914 image
180915 area
180916 area
180917 area
180918 area
180919 range
180920 range
180921 motion vector
180922 displacement vector
180923 displacement vector
181000 external image signal
181001 Horizontal sync signal
181002 vertical sync signal
181003 image signal
181004 source start pulse
181005 Source clock
181006 Gate start pulse
181007 gate clock
181008 Frequency control signal
181011 Control circuit
18101 Source Driver
181013 Gate driver
181014 Display area
181015 Image processing circuit
181016 Timing generation circuit
181020 detection circuit
181021 first memory
181022 second memory
181023 third memory
181023 image signal
181024 brightness control circuit
181025 high speed processing circuit
181026 Memory
20101 Backlight unit
20102 Diffusion plate
20103 Light guide plate
20104 Reflector
20105 Lamp reflector
20106 light source
20107 LCD panel
20201 backlight unit
20202 lamp reflector
20203 Cold cathode tube
20211 Backlight unit
20212 lamp reflector
20213 Light Emitting Diode (LED)
20213W light emitting diode
20221 Backlight unit
20222 lamp reflector
20223 light emitting diode (LED)
20224 Light emitting diode (LED)
20225 light emitting diode (LED)
20231 backlight unit
20232 lamp reflector
20233 Light Emitting Diode (LED)
20234 Light Emitting Diode (LED)
20235 Light Emitting Diode (LED)
20300 Polarized film
20301 Protective film
20302 substrate film
20303 PVA polarizing film
20304 substrate film
20305 Adhesive layer
20306 Release film
20401 video signal
20402 control circuit
20403 Signal line driver circuit
20404 scanning line drive circuit
20405 pixel area
20406 lighting means
20407 power supply
20408 drive circuit
20410 scanning line
20412 Signal line
20431 shift register
20432 latch
20433 latch
20434 Level shifter
20435 buffer
20441 shift register
20442 Level Shifter
20443 buffer
20500 backlight unit
20501 Diffusion plate
20502 shading plate
20503 lamp reflector
20504 light source
20505 LCD panel
20510 backlight unit
20511 Diffusion plate
20512 shading board
20513 lamp reflector
20514 light source
20515 LCD panel
20514a light source (R)
20514b light source (G)
20514c light source (B)
40100 pixels
40101 Transistor
40102 Liquid Crystal Element
40103 capacitive element
40104 Wiring
40105 Wiring
40106 Wiring
40107 Counter electrode
40110 pixels
40111 Transistor
40112 Liquid Crystal Element
40113 capacitive element
40114 Wiring
40115 Wiring
40116 Wiring
40,200 pixels (pixel
40,200 pixels
40201 transistor
40202 Liquid crystal element
40203 Capacitive element
40204 wiring
40205 wiring
40206 Wiring
40207 Counter electrode
40210 pixels
40211 transistor
40212 Liquid Crystal Element
40213 capacitive element
40214 Wiring
40215 wiring
40216 wiring
40217 Counter electrode
40300 sub pixels
40301 transistor
40302 Liquid crystal element
40303 capacitive element
40304 wiring
40305 Wiring
40306 wiring
40307 Counter electrode
40310 sub-pixel
40311 transistor
40312 Liquid Crystal Element
40313 capacitive element
40315 wiring
40316 Wiring
40317 Counter electrode
40320 pixels
50100 liquid crystal layer
50101 board
50102 board
50103 Polarizer
50104 Polarizer
50105 electrode
50106 electrode
50200 liquid crystal layer
50201 substrate
50202 substrate
50203 Polarizer
50204 Polarizer
50205 electrode
50206 electrode
50210 Liquid crystal layer
50211 substrate
50212 substrate
50213 Polarizer
50214 Polarizer
50215 electrode
50216 electrode
50300 liquid crystal layer
50301 board
50302 board
50303 Polarizer
50304 Polarizer
50305 electrode
50306 electrode
50310 Liquid crystal layer
50311 substrate
50312 substrate
50313 Polarizer
50314 Polarizer
50315 electrode
50316 electrode
50400 liquid crystal layer
50401 substrate
50402 substrate
50403 Polarizer
50404 Polarizer
50405 electrode
50406 electrode
50410 Liquid crystal layer
50411 substrate
50412 substrate
50413 Polarizer
50414 Polarizer
50415 electrode
50416 electrode
50417 Insulating film
50501 pixel electrode
50503 projections
50601 pixel electrode
50602 pixel electrode
50611 pixel electrode
50612 pixel electrode
50631 pixel electrode
50632 pixel electrode
50641 pixel electrode
50642 pixel electrode
50701 pixel electrode
50702 pixel electrode
50711 pixel electrode
50712 pixel electrode
50731 pixel electrode
50732 pixel electrode
50741 pixel electrode
50742 pixel electrode
502117 Projections
502118 Projections
10101 substrate
10102 Insulating film
10103 Conductive layer
10104 insulating film
10105 Semiconductor layer
10106 Semiconductor layer
10107 Conductive layer
10108 Insulating film
10109 Conductive layer
10110 Alignment film
10112 Alignment film
10113 Conductive layer
10114 Light shielding film
10115 color filter
10116 substrate
10117 Spacer
10118 liquid crystal molecules
10201 substrate
10202 Insulating film
10203 Conductive layer
10204 Insulating film
10205 Semiconductor layer
10206 Semiconductor layer
10207 Conductive layer
10208 Insulating film
10209 Conductive layer
10210 Alignment film
10212 Alignment film
10213 Conductive layer
10214 Light shielding film
10215 color filter
10216 board
10217 Spacer
10218 liquid crystal molecules
10219 Projection for orientation control
10231 substrate
10232 Insulating film
10233 Conductive layer
10234 Insulating film
10235 Semiconductor layer
10236 Semiconductor layer
10237 Conductive layer
10238 Insulating film
10239 Conductive layer
10240 Alignment film
10242 Alignment film
10243 Conductive layer
10244 Shading film
10245 color filter
10246 substrate
10247 Spacer
10248 Liquid crystal molecules
10249 copies
10301 board
10302 Insulating film
10303 Conductive layer
10304 Insulating film
10305 Semiconductor layer
10306 Semiconductor layer
10307 Conductive layer
10308 Insulating film
10309 Conductive layer
10310 Alignment film
10312 Alignment film
10314 Light shielding film
10315 color filter
10316 board
10317 Spacer
10318 liquid crystal molecules
10331 PCB
10332 Insulating film
10333 Conductive layer
10334 Insulating film
10335 Semiconductor layer
10336 Semiconductor layer
10337 Conductive layer
10338 Insulating film
10339 Conductive layer
10340 Alignment film
10342 Alignment film
10343 Conductive layer
10344 Shading film
10345 color filter
10346 substrate
10347 Spacer
10348 liquid crystal molecules
10349 Insulating film
10401 scan line
10402 video signal line
10403 capacity line
10404 transistor
10405 pixel electrode
10406 pixel capacity
10501 scan line
10502 video signal line
10503 capacity line
10504 transistor
10505 pixel electrode
10506 pixel capacity
10507 Projection for orientation control
10511 scanning line
10512 video signal line
10513 capacity line
10514 transistor
10515 pixel electrode
10516 pixel capacity
10517 parts
10601 scan line
10602 Video signal line
10603 common electrode
10604 transistor
10605 pixel electrode
10611 scan line
10612 Video signal line
10613 common electrode
10614 transistor
10615 pixel electrode
106013 common electrode
70101 board
70102 Alignment film
70103 Laura
70104 rubbing roller
70105 Sealing material
70106 Spacer
70107 substrate
70108 Alignment film
70109 Liquid Crystal
70110 resin
70113 Liquid crystal inlet
70301 board
70302 Alignment film
70303 Laura
70304 rubbing roller
70305 Sealing material
70306 Spacer
70307 board
70308 Alignment film
70309 LCD
80300 pixels
80301 Switching transistor
80302 Driving transistor
80303 capacitive element
80304 light emitting element
80305 signal line
80306 scan line
80307 power line
80308 common electrode
80309 Rectifier element
80400 pixels
80401 Switching transistor
80402 driving transistor
80403 capacitive element
80404 light emitting element
80405 signal line
80406 scan line
80407 power line
80408 common electrode
80409 Rectifier element
80410 scanning line
80500 pixels
80501 Switching transistor
80502 Driving transistor
80503 capacitive element
80504 light emitting element
80505 signal line
80506 scan line
80507 power line
80508 common electrode
80509 Erase transistor
Scan line
80600 drive transistor
80601 switch
80602 switch
80603 switch
80604 capacitive element
80605 capacitive element
80611 Signal line
80612 power line
Scan line
80614 scan line
Light emitting element
80621 common electrode
80700 driving transistor
80701 switch
80702 switch
80703 switch
80704 capacitive element
80711 signal line
80712 power line
Scan line
Scan line
80730 light emitting element
80731 common electrode
80734 scanning line
70101 board
70102 Alignment film
70103 Laura
70104 rubbing roller
70105 Sealing material
70106 Spacer
70107 substrate
70108 Alignment film
70109 Liquid Crystal
70110 resin
70113 Liquid crystal inlet
70301 board
70302 Alignment film
70303 Laura
70304 rubbing roller
70305 Sealing material
70306 Spacer
70307 board
70308 Alignment film
70309 LCD
80300 pixels
80301 Switching transistor
80302 Driving transistor
80303 capacitive element
80304 light emitting element
80305 signal line
80306 scan line
80307 power line
80308 common electrode
80309 Rectifier element
80400 pixels
80401 Switching transistor
80402 driving transistor
80403 capacitive element
80404 light emitting element
80405 signal line
80406 scan line
80407 power line
80408 common electrode
80409 Rectifier element
80410 scanning line
80500 pixels
80501 Switching transistor
80502 Driving transistor
80503 capacitive element
80504 light emitting element
80505 signal line
80506 scan line
80507 power line
80508 common electrode
80509 Erase transistor
Scan line
80600 drive transistor
80601 switch
80602 switch
80603 switch
80604 capacitive element
80605 capacitive element
80611 Signal line
80612 power line
Scan line
80614 scan line
Light emitting element
80621 common electrode
80700 driving transistor
80701 switch
80702 switch
80703 switch
80704 capacitive element
80711 signal line
80712 power line
Scan line
Scan line
80730 light emitting element
80731 common electrode
80734 scanning line
60105 transistor
60106 wiring
60107 Wiring
60108 transistor
60111 Wiring
60112 Counter electrode
60113 capacitor
60115 pixel electrode
60116 partition wall
60117 Organic conductor film
60118 Organic thin film
60119 substrate
60200 board
60201 wiring
60202 wiring
60203 wiring
60204 wiring
60205 transistor
60206 transistor
60207 transistor
60208 pixel electrode
60211 bulkhead
60212 organic conductor film
60213 Organic thin film
60214 Counter electrode
60300 board
60301 Wiring
60302 wiring
60303 wiring
60304 wiring
60305 transistor
60306 transistor
60307 transistor
60308 transistor
60309 pixel electrode
60311 Wiring
60312 Wiring
60321 bulkhead
60322 Organic conductor film
60323 Organic thin film
60324 Counter electrode
190101 Anode
190102 cathode
190103 Hole transport region
190104 Electron transport area
190105 Mixed area
190106 area
190107 Area
190108 area
190109 Area
190260 Transfer room
190261 Transfer room
190262 Road room
190263 Unloading room
190264 Intermediate processing room
190265 Sealing chamber
190266 Transportation means
190267 Transportation means
190268 Heat treatment room
190269 Deposition chamber
190270 Deposition chamber
190271 Deposition chamber
190272 Plasma processing room
190273 Deposition chamber
190274 Deposition processing chamber
190276 Deposition chamber
190380 Evaporation source holder
190381 Evaporation source
190382 Distance sensor
190383 articulated arm
190384 Material supply pipe
190386 Substrate stage
190387 Substrate chuck
190388 Mask chuck
190389 substrate
190390 shadow mask
190391 top board
190392 Bottom plate
190277a gate valve
190381a Evaporation source
190381b Evaporation source
190381c Evaporation source
190385a material supply source
190385b material supply source
190385c material supply source
120100 electrode layer
120102 Electroluminescent layer
120103 electrode layer
120104 insulating film
120105 Insulating film
120106 insulating film
120,200 electrode layer
120201 Light emitting material
120202 Electroluminescent layer
120203 electrode layer
120204 Insulating film
120205 Insulating film
120206 Insulating film
130100 Rear projection display
130101 Screen panel
130102 speaker
130104 Operation switches
130110 Case
130111 Projector unit
130112 Mirror
130200 Front projection display
130201 Projection optics
130301 Light source unit
130302 Light source lamp
130303 Light source optical system
130304 Modulation unit
130305 dichroic mirror
130306 Total reflection mirror
130308 Display panel
130309 Prism
130310 Projection optical system
130400 Modulation unit
130401 dichroic mirror
130402 dichroic mirror
130403 Total Reflection Mirror
130404 Polarizing beam splitter
130405 Polarizing beam splitter
130406 Polarizing beam splitter
130407 reflective display panel
130411 Projection optics
130501 dichroic mirror
130502 dichroic mirror
130503 Red light dichroic mirror
130504 Retardation plate
130505 color filter board
130506 Micro Lens Array
130507 Display panel
130508 Display panel
130509 Display panel
130511 Projection optical system
900101 Display panel
900102 pixel area
900103 scan line driver circuit
900104 Signal line driver circuit
900111 Circuit board
900112 Control Circuit
900113 Signal divider circuit
900114 Connection wiring
900201 Tuner
900202 Video signal amplifier circuit
900203 Video signal processing circuit
900205 Audio signal amplifier circuit
900206 Audio signal processing circuit
900207 Speaker
900208 Control Circuit
900209 Input unit
900212 Control Circuit
900213 Signal divider circuit
900301 Case
900302 display screen
900303 Speaker
900304 Operation switch
900305 Input method
900306 sensor
900307 Microphone
900310 Charger
900312 Case
900313 Display unit
900316 Operation key
900317 speaker unit
900318 Input method
900319)
900320 Macrophone
900401 Display panel
900402 printed wiring board
900403 pixel area
900404 scan line driver circuit
900405 scan line driver circuit
900406 Signal line driver circuit
900407 controller
900408 Central Processing Unit (CPU)
900409 Memory
900410 Power supply circuit
900411 Voice processing circuit
900412 Transmitter / Receiver Circuit
900413 Flexible printed circuit (FPC)
900414 interface (I / F) part
900415 antenna port
900416 VRAM
900417 DRAM
900418 flash memory
900419 interface (I / F) part
900420 Control signal generation circuit
900421 decoder
900421 One-sided decoder
900422 register
900423 arithmetic circuit
900424 RAM
900425 input means
900426 Microphone
900427 Speaker
900428 Antenna
900501 Display panel
900513 FPC
900530 Housing
900531 Printed Circuit Board
900532 Speaker
900533 Microphone
900534 transceiver circuit
900535 Signal Processing Circuit
900536 input means
900537 Battery
900539 chassis
900541 sensor
900600 mobile phone
900601 body (A)
900602 Main unit (B)
900603 chassis
900604 Operation switches
900605 Microphone
900606 Speaker
900607 Circuit Board
900608 Display panel (A)
900609 Display panel (B)
900610 Hinges
900611 sensor
900612 Input method
900711 chassis
900712 Support stand
900713 Display area
900714 Input method
900715)
900716 Microphone
900717 Speaker
900718 Operation key
900719 LED lamp
900731 main unit
900732 Display area
900733 Receiver
900734 Operation key
900735 External connection port
900736 Shutter
900737 Input method
900738 Sensor
900739 Microphone
900740 Speaker
900741 LED lamp
900751 main unit
900752 chassis
900753 Display area
900754 keyboard
900755 External connection port
900756 pointing device
900757 Input means
900758)
900759 Microphone
900760 Speaker
900761 LED lamp
900762 Reader / Writer
900810 Housing
900811 Display area
900812 remote control device
900813 Speaker section
900901 Display panel
900902 Unit bus
901001 Columnar Body
901002 Display Panel
901101 car body
901102 Display panel
901201 door
901202 Display panel
901203 glass window
901204 Ceiling
901301 ceiling
901302 Display panel
901303 hinge part
901411 body
901412 Display area
901413 switch
901414 Operation key
901415 infrared port
901416 Input method
901417)
901418 Microphone
901419 Speaker
901420 LED lamp
901431 main unit
901432 chassis
901433 Display A
901434 Display B
901435
901436 Operation key
901437 Speaker section
901438 input means
901439)
901440 Microphone
901441 LED lamp
901451 main unit
901452 Display area
901453 earphones
901454 Supporter
901455 Input method
901456)
901457 Microphone
901458 Speaker
901511 chassis
901512 Display area
901513 Speaker section
901514 Operation key
901515 Storage medium insertion unit
901516 Input means
901517)
901518 Microphone
901519 LED lamp
901531 main unit
901532 Display area
901533 Operation key
901534 Speaker
901535 Shutter
901536 Receiver
901537 Antenna
901538 Input method
901539 sensor
901540 Microphone
901541 LED lamp
901611 chassis
901612 Display area
901613 Display area
901614 Speaker section
901615 Operation key
901616 Recording medium insertion unit
901617 Input means
901618)
901619 Microphone
901620 LED lamp

Claims (2)

The potential of the first wiring is supplied to the pixel electrode of the first liquid crystal element,
The pixel electrode of the second liquid crystal element is supplied with a potential obtained by dividing the potential of the first wiring and the potential of the second wiring by the first transistor and the second transistor.
One of a source and a drain of the first transistor is electrically connected to a pixel electrode of the first liquid crystal element,
The other of the source and the drain of the first transistor is electrically connected to the pixel electrode of the second liquid crystal element,
The first transistor and the second transistor can be turned on at the same time,
A display device in which an image signal or a constant signal is supplied to the first wiring and the second wiring; The potential of the first wiring is supplied to the pixel electrode of the first liquid crystal element,
The pixel electrode of the second liquid crystal element is supplied with a potential obtained by dividing the potential of the first wiring and the potential of the second wiring by the first transistor and the second transistor.
One of a source and a drain of the first transistor is electrically connected to a pixel electrode of the first liquid crystal element,
The other of the source and the drain of the first transistor is electrically connected to the pixel electrode of the second liquid crystal element,
The first transistor and the second transistor can be turned on at the same time,
An image signal or a constant signal is supplied to the first wiring and the second wiring,
A display device, wherein one or both of the first transistor and the second transistor have a multi-gate structure.

Images