JP2023040062A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve an angle-of-view characteristic by differentiating voltages applied to a liquid crystal element.

SOLUTION: One embodiment of the present invention is a liquid crystal display device which has three or more liquid crystal elements in one pixel and in which a voltage applied to each liquid crystal element is different from others. An element that divides the applied voltage is disposed in order to differentiate the voltage to be applied to the respective liquid crystal elements. In order to differentiate the voltage to be applied, capacitive elements, resistive elements, or transistors or the like are used.

SELECTED DRAWING: Figure 23

COPYRIGHT: (C)2023,JPO&INPIT

Description

The present invention relates to an article, method or method of producing an article. In particular, it relates to a display device or a semiconductor device. In particular, it relates to display devices. In particular, it relates to an active matrix liquid crystal display device.

In recent years, liquid crystal display devices and EL display devices have been rapidly developed as display devices. In particular, the spread of liquid crystal display devices is remarkable. Liquid crystal display devices are required to have high brightness, high contrast, high-speed response, wide viewing angle, and the like. Reduction of power consumption, weight reduction, and miniaturization are also important issues for liquid crystal display devices mounted in portable electronic devices.

Various techniques have been developed to widen the viewing angle of liquid crystal display devices. As a technology for widening the viewing angle, for example, MVA (Multi Vertical Domain).
called VA. ) Method PVA (Patterned Vertical Alignment
t. Hereinafter, it is called PVA. ) method and CPA (Continuous Pinwheel
Alignment) method. Although the viewing angle has been widened by such technology, it is still insufficient. Therefore, by dividing one pixel into two sub-pixels, the alignment state of the liquid crystal is varied, and the tilt angles of the liquid crystal molecules are apparently averaged, creating the illusion of a uniform display when viewed from any direction. is developed to improve viewing angle characteristics (for example, Patent Document 1).

JP 2006-276582 A

In the liquid crystal display device, the viewing angle characteristics can be improved by providing a pixel with sub-pixels so that the pixel has a plurality of alignment states. However, the viewing angle characteristics are still not sufficient, and it may be possible to improve the viewing angle characteristics by adding more sub-pixels.

However, if the number of sub-pixels is simply increased, the inconvenience of a decrease in aperture ratio and an increase in the number of driving circuits will occur, resulting in not only an increase in manufacturing costs but also a detriment in that the performance itself as a display device will deteriorate. . Specifically, when the aperture ratio decreases, brightness and contrast decrease, and power consumption increases. Alternatively, the layout density of pixels increases, the manufacturing yield decreases, and the cost increases. Alternatively, as the number of sub-pixels increases, the number of image signals to be input also increases. Therefore, the number of connections between the glass substrate and the external drive circuit increases. As a result, the reliability is lowered due to poor contact or the like.

An object of the present invention is to provide a display device having excellent viewing angle characteristics while maintaining performance as a display device. Alternatively, an object of the present invention is to provide a highly reliable display device. Another object of the present invention is to provide a high-contrast display device. Another object of the present invention is to provide a lightweight display device. Another object of the present invention is to provide a small-sized display device. Another object of the present invention is to provide a display device with high luminance. Another object of the present invention is to provide a display device with low power consumption. Another object of the present invention is to provide a display device with a high aperture ratio. Another object of the present invention is to provide a display device with low manufacturing cost.

One aspect of the present invention is a liquid crystal display device having three or more liquid crystal elements in one pixel, and different voltage values being applied to each of the liquid crystal elements. In order to make the voltage applied to each liquid crystal element different, an element for dividing the applied voltage is arranged. Alternatively, an element that converts current into voltage or an element that converts voltage into current is arranged. Examples include arranging capacitive elements, resistive elements, nonlinear elements, switches, transistors, diode-connected transistors, diodes (PIN type, PN type, Schottky type, MIM type, MIS type, etc.), inductor elements, and the like. done by

Various types of switches can be used. Examples include electrical switches, mechanical switches, and the like. In other words, any device that can control the flow of current will suffice.
It is not limited to a specific one. For example, as a switch, a transistor (eg, bipolar transistor, MOS transistor, etc.), a diode (eg, PN diode, PI
N diode, Schottky diode, MIM (Metal Insulator M
et al) diode, MIS (Metal Insulator Semiconductor
(ctor) diode, diode-connected transistor, etc.), thyristor, or the like can be used. Alternatively, a logic circuit in which these are combined can be used as a switch.

Examples of mechanical switches are switches using MEMS (micro-electro-mechanical system) technology, such as digital micromirror devices (DMD). The switch has an electrode that can be moved mechanically, and operates by controlling connection and disconnection by moving the electrode.

When a transistor is used as a switch, the transistor simply operates as a switch; therefore, the polarity (conductivity type) of the transistor is not particularly limited. However, when it is desired to suppress off-state current, it is preferable to use a transistor having a polarity with a smaller off-state current. As a transistor with low off-state current, there are a transistor having an LDD region, a transistor having a multi-gate structure, and the like. Alternatively, in the case where the potential of the source terminal of the transistor operated as a switch operates in a state close to the potential of the low-potential power supply (Vss, GND, 0 V, etc.), it is desirable to use an N-channel transistor. On the contrary, it is desirable to use a P-channel transistor when operating in a state where the potential of the source terminal is close to the potential of the high-potential power supply (eg, Vdd). This is because when an N-channel transistor operates in a state where the source terminal is close to the potential of the power supply on the low potential side, and when a P-channel transistor operates in a state where the source terminal is close to the potential on the high potential side power supply, the gate and source This is because the absolute value of the voltage between them can be increased, so that they can easily operate as switches. This is because the source follower operation is less likely to occur, and the magnitude of the output voltage is less likely to decrease.

Note that the CMO
An S-type switch may be used as the switch. If a CMOS type switch is used, current flows when either one of the P-channel type transistor and the N-channel type transistor is turned on, so that it easily functions as a switch. For example, whether the voltage of the input signal to the switch is high or low, the voltage can be output appropriately. Furthermore, since the voltage amplitude value of the signal for turning on or off the switch can be reduced, power consumption can also be reduced.

Note that when a transistor is used as the switch, the switch has an input terminal (one of the source terminal and the drain terminal), an output terminal (the other of the source terminal and the drain terminal),
and a terminal (gate terminal) for controlling conduction. On the other hand, when a diode is used as a switch, the switch may not have a terminal for controlling conduction. Therefore, using a diode as a switch rather than a transistor can reduce wiring for controlling terminals.

Note that when explicitly describing that A and B are connected, the case where A and B are electrically connected and the case where A and B are functionally connected , where A and B are directly connected. Here, A and B are objects (for example, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.). Therefore, it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the diagram or text, and includes connections other than the connection relationship shown in the diagram or text.

For example, when A and B are electrically connected, an element (for example, switch, transistor, capacitive element, inductor, resistive element, diode, etc.) that enables electrical connection between A and B is , A and B. Alternatively, when A and B are functionally connected, a circuit that enables functional connection between A and B (for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.), a signal conversion circuit (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (booster circuit, step-down circuit, etc.), level shifter circuit that changes the potential level of a signal, etc.), voltage source, current source, switching circuit , amplifier circuits (circuits that can increase signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits, control circuits, etc.) may be arranged one or more. Alternatively, in the case where A and B are directly connected, A and B may be directly connected without interposing any other element or circuit between A and B.

When it is explicitly stated that A and B are directly connected, it means that A and B are directly connected (that is, another element or other circuit is connected between A and B). A and B are electrically connected (that is, A and B are connected with another element or circuit interposed between them). (if any).

It should be noted that when it is explicitly described that A and B are electrically connected, it means that A and B are electrically connected (that is, another element between A and B or another circuit) and A and B are functionally connected (that is, functionally connected with another circuit between A and B). ) and when A and B are directly connected (
In other words, A and B are connected without interposing another element or another circuit between them). In other words, the explicit description of "electrically connected" is the same as the explicit description of "connected".

Display Device Note that a display element, a display device having a display element, a light-emitting element, and a light-emitting device having a light-emitting element can take various forms and include various elements. Examples of display elements, display devices, light-emitting elements, or light-emitting devices include EL elements (EL elements containing organic and inorganic substances, organic EL elements, and inorganic EL elements), electron-emitting elements, liquid crystal elements,
Electronic ink, electrophoresis element, grating light valve (GLV), plasma display (PDP), digital micromirror device (DMD), piezoelectric ceramic display, carbon nanotube, etc. A display medium whose transmittance or the like changes can be used. A display device using an EL element is an EL display, and a display device using an electron-emitting device is a field emission display (FED) or an SED flat panel display (SED: Surface).
-conduction Electron-emitter Display), as display devices using liquid crystal elements, liquid crystal displays (transmissive liquid crystal displays, transflective liquid crystal displays, reflective liquid crystal displays, direct view liquid crystal displays, projection liquid crystal displays), electronic ink As a display device using an electrophoretic element, there is electronic paper.

Note that an EL element is an element having an anode, a cathode, and an EL layer sandwiched between the anode and the cathode. Note that the EL layer utilizes light emission (fluorescence) from singlet excitons,
Including those utilizing luminescence (phosphorescence) from triplet excitons, those utilizing luminescence (fluorescence) from singlet excitons, and those utilizing luminescence (phosphorescence) from triplet excitons substances, substances formed by organic substances, substances formed by inorganic substances, substances formed by organic substances and substances formed by inorganic substances, polymeric materials, low-molecular-weight materials, polymeric materials and low-molecular-weight materials Materials including molecular materials and the like can be used. However, it is not limited to this, E
Various things can be used as an L element.

The electron-emitting device is a device that extracts electrons by concentrating a high electric field on a sharp cathode.
For example, as an electron-emitting device, Spindt type, carbon nanotube (CNT) type, metal-
Insulator-metal stacked MIM (Metal-Insulator-Metal) type, metal-insulator-semiconductor stacked MIS (Metal-Insulator-Semico)
inductor) type, MOS type, silicon type, thin film diode type, diamond type, surface conduction emitter SCD type, diode type, diamond type, surface conduction emitter SCD type, metal-
A thin film type such as an insulator-semiconductor-metal type, a HEED type, an EL type, a porous silicon type, a surface conduction (SED) type, or the like can be used. However, the electron-emitting device is not limited to this, and various devices can be used as the electron-emitting device.

Note that a liquid crystal element is an element that controls transmission or non-transmission of light by an optical modulation action of liquid crystal, and is composed of a pair of electrodes and liquid crystal. Note that the optical modulation action of the liquid crystal is
It is controlled by the electric field across the liquid crystal, including lateral, vertical or diagonal fields. Liquid crystal elements include nematic liquid crystals, cholesteric liquid crystals, smectic liquid crystals, discotic liquid crystals, thermotropic liquid crystals, lyotropic liquid crystals, lyotropic liquid crystals, low molecular liquid crystals, polymer liquid crystals, ferroelectric liquid crystals, antiferroelectric liquid crystals, and main chains. type liquid crystal, side chain type polymer liquid crystal, plasma addressed liquid crystal (PDLC), banana type liquid crystal, TN (Twisted
Nematic) mode, STN (Super Twisted Nematic) mode, IPS (In-Plane-Switching) mode, FFS (Fringe
Field Switching) mode, MVA (Multi-domain Ve
physical alignment) mode, PVA (Patterned Verti
cal Alignment), ASV (Advanced Super View) mode, ASM (Axially Symmetrically aligned Micro-c
ell) mode, OCB (Optical Compensated Birefrin)
gence) mode, ECB (Electrically Controlled Bi
reference) mode, FLC (Ferroelectric Liquid
Crystal) mode, AFLC (Anti-Ferroelectric Liquid
id Crystal) mode, PDLC (Polymer Dispersed Li
Quid Crystal) mode, guest host mode, etc. can be used. However, the liquid crystal element is not limited to this, and various liquid crystal elements can be used.

The electronic paper includes those displayed by molecules such as optical anisotropy and dye molecule orientation, those displayed by particles such as electrophoresis, particle movement, particle rotation, and phase change, and those in which one end of a film is Display by movement, display by color development/phase change of molecules, display by light absorption by molecules, display by light emission when electrons and holes combine, etc. . For example, as electronic paper, microcapsule type electrophoresis, horizontal movement type electrophoresis, vertical movement type electrophoresis, spherical twist ball, magnetic twist ball, cylindrical twist ball system, charged toner, electronic liquid powder, magnetophoresis type, magnetic thermosensitive formula, electrowetting, light scattering (transparent cloudiness), cholesteric liquid crystal/photoconductive layer, cholesteric liquid crystal, bistable nematic liquid crystal, ferroelectric liquid crystal, dichroic dye/liquid crystal dispersion type, movable film, leuco dye disappearance Color, photochromic, electrochromic, electrodeposition, flexible organic EL, etc. can be used. However, it is not limited to this, and various types of electronic paper can be used. Here, by using microcapsule-type electrophoresis, it is possible to solve the problem of aggregation and sedimentation of electrophoretic particles, which is a drawback of electrophoresis. Electronic liquid powder has advantages such as high-speed response, high reflectance, wide viewing angle, low power consumption, and memory properties.

In the plasma display, a substrate having electrodes formed on its surface and a substrate having electrodes and fine grooves formed on its surface and a phosphor layer formed in the grooves are opposed to each other at a narrow interval, and a rare gas is enclosed. have a structure. In addition, display can be performed by generating ultraviolet rays by applying a voltage between the electrodes and causing the phosphor to glow. As a plasma display, D
A C-type PDP or an AC-type PDP may be used. Here, as a plasma display panel, A
SW (Address While Sustain) drive, ADS (Address Display Se) that divides a subframe into a reset period, an address period, and a sustain period
separated) drive, CLEAR (Low Energy Address and
Reduction of False Contour Sequence) drive, A
LIS (Alternate Lighting of Surfaces) method, TE
RES (Technology of Reciprocal Sustainer) drive or the like can be used. However, it is not limited to this, and various plasma displays can be used.

In addition, a display device that requires a light source, such as a liquid crystal display (transmissive liquid crystal display, transflective liquid crystal display, reflective liquid crystal display, direct view liquid crystal display, projection liquid crystal display), grating light valve (GLV) is used. Electroluminescence, cold-cathode tubes, hot-cathode tubes, LEDs, laser light sources, mercury lamps, and the like can be used as light sources for such display devices and display devices using a digital micromirror device (DMD). However, it is not limited to this, and various light sources can be used.

Type of Transistor Note that various types of transistors can be used as the transistor. Therefore, the type of transistor to be used is not limited. For example, amorphous silicon, polycrystalline silicon,
A thin film transistor (TFT) or the like including a non-single-crystal semiconductor film typified by microcrystalline (also referred to as microcrystalline or semi-amorphous) silicon can be used. The use of TFTs has various advantages. For example, since it can be manufactured at a lower temperature than in the case of single crystal silicon, it is possible to reduce the manufacturing cost or increase the size of the manufacturing apparatus. Since the manufacturing equipment can be made large, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured at the same time, they can be manufactured at low cost. Furthermore, since the manufacturing temperature is low, a substrate with low heat resistance can be used. Therefore, a transistor can be manufactured on a transparent substrate. and,
Transistors on a transparent substrate can be used to control the transmission of light through the display element. Alternatively, since the thickness of the transistor is small, part of the film forming the transistor can transmit light. Therefore, the aperture ratio can be improved.

By using a catalyst (such as nickel) when manufacturing polycrystalline silicon, crystallinity can be further improved, and a transistor with good electrical characteristics can be manufactured. As a result, gate driver circuits (scanning line driving circuits) and source driver circuits (signal line driving circuits)
, a signal processing circuit (a signal generation circuit, a gamma correction circuit, a DA conversion circuit, etc.) can be integrally formed on the substrate.

Note that by using a catalyst (such as nickel) in manufacturing microcrystalline silicon, crystallinity can be further improved, and a transistor with excellent electrical characteristics can be manufactured. At this time, crystallinity can be improved only by applying heat treatment without performing laser irradiation. As a result, part of the gate driver circuit (scanning line driver circuit) and the source driver circuit (analog switch, etc.) can be integrally formed on the substrate. Further, when laser irradiation is not performed for crystallization, uneven crystallinity of silicon can be suppressed. Therefore, a clear image can be displayed.

However, it is possible to produce polycrystalline silicon and microcrystalline silicon without using a catalyst (such as nickel).

Although it is desirable to improve the crystallinity of silicon to polycrystalline or microcrystalline for the entire panel, the present invention is not limited to this. Crystallinity of silicon may be improved only in a partial region of the panel. It is possible to selectively improve the crystallinity by selectively irradiating a laser beam or the like. For example, only the peripheral circuit region, which is a region other than pixels, may be irradiated with laser light. Alternatively, laser light may be applied only to regions such as the gate driver circuit and the source driver circuit. Or part of the source driver circuit (
For example, only the area of the analog switch) may be irradiated with laser light. As a result, the crystallization of silicon can be improved only in the regions where the circuit needs to operate at high speed. Since there is little need to operate the pixel region at high speed, the pixel circuit can be operated without problems even if the crystallinity is not improved. Since the area for improving the crystallinity is small,
The manufacturing process can also be shortened, the throughput can be improved, and the manufacturing cost can be reduced. Manufacturing costs can be reduced because less manufacturing equipment is required.

Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like. As a result, it is possible to manufacture small-sized transistors with little variation in characteristics, size, shape, etc., high current supply capability, and the like. By using these transistors, the power consumption of the circuit can be reduced or the circuit can be highly integrated.

Or, ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO
A transistor including a compound semiconductor or an oxide semiconductor such as a thin film transistor, or a thin film transistor obtained by thinning the compound semiconductor or the oxide semiconductor can be used. As a result, the manufacturing temperature can be lowered, and for example, the transistor can be manufactured at room temperature. As a result, a transistor can be formed directly on a substrate with low heat resistance, such as a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors can be used not only for channel portions of transistors but also for other purposes.
For example, these compound semiconductors or oxide semiconductors can be used as resistance elements, pixel electrodes, and transparent electrodes. Furthermore, since they can be deposited or formed at the same time as the transistors, costs can be reduced.

Alternatively, a transistor or the like formed by an inkjet method or a printing method can be used. These allow fabrication at room temperature, in low vacuum, or on large substrates. Since manufacturing can be performed without using a mask (reticle), the layout of transistors can be easily changed. Furthermore, since there is no need to use a resist,
The material cost can be reduced and the number of processes can be reduced. Furthermore, since the film is applied only to the necessary portions, the material is not wasted and the cost can be reduced as compared with the manufacturing method in which the film is formed on the entire surface and then etched.

Alternatively, a transistor including an organic semiconductor, a carbon nanotube, or the like can be used. These allow a transistor to be formed on a bendable substrate. Therefore, it can be strongly impact-resistant.

Furthermore, transistors with various structures can be used. For example, a MOS transistor, a junction transistor, a bipolar transistor, or the like can be used as the transistor. By using a MOS transistor, the size of the transistor can be reduced. Therefore, many transistors can be mounted. A large current can flow by using a bipolar transistor. Therefore, the circuit can be operated at high speed.

Note that MOS transistors, bipolar transistors, and the like may be mixed on one substrate. As a result, low power consumption, miniaturization, high-speed operation, and the like can be achieved.

In addition, various transistors can be used.

Note that the transistor can be formed using various substrates. The type of substrate is not limited to a specific one. Examples of substrates include single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, hemp), synthetic fibers). (nylon, polyurethane, polyester) or recycled fiber (acetate, cupra, rayon, recycled polyester), etc.), leather substrate, rubber substrate, stainless steel substrate, substrate having stainless steel foil, etc. can be used. . Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. Alternatively, a transistor may be formed using one substrate, and then the transistor may be transferred to another substrate and placed over the other substrate. Substrates on which transistors are transferred include single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, linen), Synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester, etc.), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. can be done. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. Alternatively, a substrate may be used to form a transistor, and the substrate may be polished to be thin. Substrates to be polished include single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, linen), synthetic fibers, etc.). (nylon, polyurethane, polyester) or recycled fiber (acetate, cupra, rayon, recycled polyester), etc.), leather substrate, rubber substrate,
A stainless steel substrate, a substrate having a stainless steel foil, or the like can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. By using these substrates, it is possible to form a transistor with excellent characteristics, a transistor with low power consumption, manufacture a device that is not easily broken, impart heat resistance, and reduce the weight or thickness of the device.

Note that the transistor can have various structures. Not limited to any particular configuration. For example, a multi-gate structure with two or more gate electrodes may be used. When the multi-gate structure is used, the channel regions are connected in series, resulting in a structure in which a plurality of transistors are connected in series. The multi-gate structure can reduce off-state current and improve reliability by increasing the withstand voltage of the transistor. Alternatively, due to the multi-gate structure, even if the voltage between the drain and source changes, the current between the drain and source does not change much when operating in the saturation region, and the slope of the voltage-current characteristics can be made flat. can. By utilizing the flat slope of the voltage/current characteristics, it is possible to realize an ideal current source circuit and an active load with a very high resistance value. As a result, a differential circuit or current mirror circuit with good characteristics can be realized. As another example, a structure in which gate electrodes are arranged above and below a channel may be used. Since the channel region is increased by arranging the gate electrodes above and below the channel, it is possible to increase the current value or reduce the S value by facilitating the formation of a depletion layer. When the gate electrodes are arranged above and below the channel, the configuration is such that a plurality of transistors are connected in parallel.

Alternatively, a structure in which the gate electrode is arranged above the channel region or a structure in which the gate electrode is arranged below the channel region may be used. Alternatively, a staggered structure or an inverted staggered structure may be used, the channel region may be divided into a plurality of regions, the channel regions may be connected in parallel, or the channel regions may be connected in series. good. Alternatively, a source electrode or a drain electrode may overlap the channel region (or part thereof). By forming a structure in which the source electrode and the drain electrode overlap with the channel region (or part thereof), it is possible to prevent the operation from becoming unstable due to accumulation of charge in part of the channel region. Alternatively, an LDD region may be provided. By providing the LDD region, off-state current can be reduced, or the breakdown voltage of the transistor can be improved, thereby improving reliability. Alternatively, by providing the LDD region, even if the voltage between the drain and the source changes when operating in the saturation region, the current between the drain and the source does not change so much, and the slope of the voltage-current characteristics becomes flat. be able to.

Note that various types of transistors can be used and can be formed using various substrates. Therefore, all the circuits necessary for realizing a given function may be formed on the same substrate. For example, all circuits necessary for realizing a given function may be formed using a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, and may be formed using various substrates. may All of the circuits required to achieve a given function are formed on the same substrate, which reduces costs by reducing the number of parts, or improves reliability by reducing the number of connections with circuit parts. can be planned. Alternatively, part of a circuit necessary for realizing a predetermined function is formed on one substrate, and another part of the circuit necessary for realizing a predetermined function is formed on another substrate. may be In other words, not all the circuits required for realizing a given function need to be formed using the same substrate. For example, part of the circuit required to achieve a given function is formed using transistors on a glass substrate, and another part of the circuit required to achieve a given function is formed on a single crystal substrate. An IC chip formed of transistors formed using a single crystal substrate may be connected to a glass substrate by COG (Chip On Glass), and the IC chip may be arranged on the glass substrate. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed circuit board. Since part of the circuit is formed on the same substrate in this way, the cost can be reduced by reducing the number of parts, or the reliability can be improved by reducing the number of connections with circuit parts. Alternatively, since the circuits in the high driving voltage portion and the high driving frequency portion consume a large amount of power, the circuits in such portions are not formed on the same substrate. An increase in power consumption can be prevented by forming a circuit for that portion and using an IC chip configured with that circuit.

Note that one pixel indicates one element whose brightness can be controlled. Therefore, as an example, one pixel indicates one color element, and the single color element expresses brightness. Therefore, at that time, in the case of a color display device consisting of R (red), G (green) and B (blue) color elements, the minimum unit of an image is an R pixel, a G pixel and a B pixel. It shall consist of three pixels. Note that the color elements are not limited to three colors, three or more colors may be used, and colors other than RGB may be used. For example, it may be RGBW (where W is white) by adding white. Alternatively, one or more colors such as yellow, cyan, magenta, emerald green, and vermilion may be added to RGB. Alternatively, for example, a color similar to at least one color in RGB may be added to RGB. For example, it may be R, G, B1, and B2. Both B1 and B2 are blue, but have slightly different frequencies. Similarly, R1, R2, G, and B may be used. By using such color elements, a more realistic display can be achieved. By using such color elements, power consumption can be reduced. As another example, when the brightness is controlled using a plurality of regions for one color element, one region may be used as one pixel. Therefore, as an example, when performing area gradation or sub-pixel (
sub-pixel), there are multiple areas for controlling brightness for each color element,
Although the gradation is expressed by the entire area, one area for controlling the brightness may be one pixel. Therefore, in that case, one color element is composed of a plurality of pixels. Alternatively, even if there are multiple areas for controlling brightness in one color element, they are grouped together,
One color element may be one pixel. Therefore, in that case, one color element is composed of one pixel. Alternatively, when the brightness is controlled using a plurality of regions for one color element, the size of the region contributing to display may differ depending on the pixel. Alternatively, the viewing angle may be widened by supplying slightly different signals to each of the plurality of brightness control regions for each color element. i.e. 1
For one color element, the potentials of pixel electrodes in a plurality of regions may be different. As a result, the voltage applied to the liquid crystal molecules is different for each pixel electrode. Therefore, the viewing angle can be widened.

Note that when one pixel (for three colors) is explicitly described, it is assumed that three pixels of R, G, and B are considered to be one pixel. When one pixel (for one color) is explicitly described, it is assumed that when there are a plurality of areas for one color element, they are collectively considered as one pixel.

Note that the pixels may be arranged (arranged) in a matrix. Here, the arrangement (arrangement) of the pixels in a matrix includes the case where the pixels are arranged in a straight line in the vertical direction or the horizontal direction, or the case where the pixels are arranged in a jagged line. Therefore, for example, when full-color display is performed with three color elements (eg, RGB), the case of stripe arrangement or the case of delta arrangement of dots of three color elements is also included. Furthermore, the case of Bayer arrangement is also included. Note that the color elements are not limited to three colors, and may be more than three colors. For example, there are RGBW (W is white), or RGB with one or more colors such as yellow, cyan, and magenta added. Note that the size of the display area may be different for each dot of the color element. As a result, power consumption can be reduced or the life of the display element can be extended.

Note that an active matrix system in which pixels have active elements or a passive matrix system in which pixels do not have active elements can be used.

In the active matrix system, not only transistors but also various active elements (active elements, nonlinear elements) can be used as active elements (active elements, nonlinear elements). For example, MIM (Metal Insulator Metal) and TFD
(Thin Film Diode) or the like can also be used. Since these elements require fewer manufacturing steps, the manufacturing cost can be reduced or the yield can be improved. Furthermore, since the size of the element is small, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

As a method other than the active matrix method, it is also possible to use a passive matrix method that does not use active elements (active elements, non-linear elements). Since active elements (active elements, non-linear elements) are not used, the number of manufacturing steps is small, and the manufacturing cost can be reduced or the yield can be improved. Since an active element (active element, nonlinear element) is not used, the aperture ratio can be improved, and low power consumption and high brightness can be achieved.

Note that a transistor is an element having at least three terminals including a gate, a drain, and a source, and has a channel region between the drain region and the source region. A current can flow through the Here, since the source and the drain change depending on the structure of the transistor, operating conditions, etc., it is difficult to define which is the source or the drain. Therefore, in this document (specification, claims, drawings, etc.), regions that function as sources and drains may not be called sources or drains. In that case, as an example, they may be referred to as a first terminal and a second terminal, respectively. Alternatively, they may be referred to as a first electrode and a second electrode, respectively. Alternatively, they may be referred to as a source region and a drain region.

A transistor may be a device having at least three terminals including a base, an emitter and a collector. In this case as well, the emitter and collector may be referred to as the first terminal and the second terminal.

Note that a gate means the whole including a gate electrode and a gate wiring (also referred to as a gate line, a gate signal line, a scanning line, a scanning signal line, etc.) or a part of them. A gate electrode refers to a portion of a conductive film that overlaps a semiconductor forming a channel region with a gate insulating film interposed therebetween. Note that part of the gate electrode is LDD (Lightly Domed).
ped Drain) region or a source region (or drain region) in some cases through a gate insulating film. A gate wiring is a wiring for connecting gate electrodes of transistors, a wiring for connecting gate electrodes of pixels, or a wiring for connecting a gate electrode and another wiring. say.

However, a portion (region,
conductive film, wiring, etc.) are also present. Such a portion (region, conductive film, wiring, etc.) may be called a gate electrode or a gate wiring. In other words, the gate electrode and the gate wiring are
There are also regions that cannot be clearly distinguished. For example, when a portion of a gate wiring that is extended and arranged overlaps a channel region, that portion (region, conductive film, wiring, etc.) functions as a gate wiring, but it also functions as a gate electrode. It is working. Therefore, such a portion (region, conductive film, wiring, etc.) may be called a gate electrode or a gate wiring.

Note that a portion (region, conductive film, wiring, etc.) made of the same material as the gate electrode and connected to form the same island as the gate electrode may also be called the gate electrode. Similarly, a portion (region, conductive film, wiring, etc.) formed of the same material as the gate wiring and connected to form the same island as the gate wiring may also be referred to as the gate wiring. Strictly speaking, such portions (regions, conductive films, wirings, etc.) may not overlap with the channel region, or may not have the function of connecting to another gate electrode. However, due to manufacturing specifications, etc., a portion (region, conductive film, wiring, etc.) formed of the same material as the gate electrode or gate wiring and connected by forming the same island as the gate electrode or gate wiring. ). Therefore, such portions (regions, conductive films, wirings, etc.) may also be called gate electrodes or gate wirings.

Note that, for example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected by a conductive film formed using the same material as the gate electrode. Such portions (regions, conductive films, wirings, etc.) are portions (regions, conductive films, wirings, etc.) for connecting gate electrodes, so they may be called gate wirings. can be regarded as one transistor, it may be called a gate electrode. In other words, a portion (region, conductive film, wiring, etc.) that is formed of the same material as the gate electrode or gate wiring and forms the same island as the gate electrode or gate wiring.
may be called a gate electrode or a gate wiring. Furthermore, for example, a conductive film in a portion that connects a gate electrode and a gate wiring and is formed of a material different from that of the gate electrode or the gate wiring may be called a gate electrode or a gate wiring. You can call it

Note that the gate terminal refers to a portion of the gate electrode (region, conductive film, wiring, etc.) or a portion of a portion electrically connected to the gate electrode (region, conductive film, wiring, etc.). .

Note that the gate wiring, gate line, gate signal line, scanning line, scanning signal line, or the like may not be connected to the gate of the transistor in some cases. In this case, gate wirings, gate lines, gate signal lines, scanning lines, and scanning signal lines are wirings formed of the same layer as the transistor gates, wirings formed of the same material as the transistor gates, or the gates of the transistors. In some cases, it means a film-formed wiring. Examples include storage capacitor wiring, power supply wiring, reference potential supply wiring, and the like.

The source means a source region, a source electrode, and a source wiring (source line, source signal line,
Also referred to as data lines, data signal lines, etc.), or part of them. A source region is a semiconductor region containing a large amount of P-type impurities (boron, gallium, etc.) or N-type impurities (phosphorus, arsenic, etc.). Therefore, a region containing a small amount of P-type or N-type impurities, a so-called LDD (Lightly Doped Drain) region,
Not included in the source area. A source electrode is a portion of a conductive layer formed of a material different from that of a source region and electrically connected to the source region. However, the source electrode may also be called a source electrode including the source region. A source wiring is a wiring for connecting source electrodes of transistors, a wiring for connecting source electrodes of pixels, or a wiring for connecting a source electrode and another wiring. say.

However, a portion that functions both as a source electrode and as a source wiring (
regions, conductive films, wiring, etc.). Such a portion (region, conductive film, wiring, etc.) may be called a source electrode or a source wiring. In other words, there are regions where the source electrode and the source wiring cannot be clearly distinguished. For example, when a part of the source wiring arranged to extend and the source region overlap, that part (region, conductive film,
wiring, etc.) functions as a source wiring, but also functions as a source electrode. Therefore, such a portion (region, conductive film, wiring, etc.) may be called a source electrode or a source wiring.

Note that a portion (a region, a conductive film, a wiring, or the like) that is formed of the same material as the source electrode and is connected by forming the same island as the source electrode, or a portion that connects the source electrode and another source electrode (a region). , a conductive film, a wiring, etc.) may also be called a source electrode. Furthermore, the portion overlapping with the source region may also be called a source electrode. Similarly, a region formed of the same material as the source wiring and connected by forming the same island as the source wiring is also
You may call it a source wiring. Strictly speaking, such portions (regions, conductive films, wirings, etc.) may not have the function of connecting to another source electrode. However, there are portions (regions, conductive films, wirings, etc.) formed of the same material as the source electrodes or the source wirings and connected to the source electrodes or the source wirings due to manufacturing specifications and the like. Therefore, such portions (regions, conductive films, wirings, etc.) may also be called source electrodes or source wirings.

Note that, for example, a conductive film in a portion connecting a source electrode and a source wiring and formed of a material different from that of the source electrode or the source wiring may be called a source electrode or a source wiring. You can call it

Note that the source terminal refers to a portion of a source region, a source electrode, or a portion electrically connected to the source electrode (region, conductive film, wiring, or the like).

When referring to source wiring, source line, source signal line, data line, data signal line, etc.,
In some cases, the source (drain) of the transistor is not connected to the wiring. In this case, the source wiring, the source line, the source signal line, the data line, and the data signal line are wiring formed of the same layer as the source (drain) of the transistor, and wiring formed of the same material as the source (drain) of the transistor. Alternatively, it may mean a wiring formed at the same time as the source (drain) of a transistor. Examples include storage capacitor wiring, power supply wiring, reference potential supply wiring, and the like.

Note that the drain is the same as the source.

Note that a semiconductor device refers to a device having a circuit including a semiconductor element (transistor, diode, thyristor, or the like). Furthermore, all devices that can function by utilizing semiconductor characteristics may be called semiconductor devices. Alternatively, a device having a semiconductor material is referred to as a semiconductor device.

The display elements include optical modulation elements, liquid crystal elements, light emitting elements, EL elements (organic EL elements,
Inorganic EL devices or EL devices containing organic and inorganic substances), electron-emitting devices, electrophoresis devices, discharge devices, light reflection devices, light diffraction devices, digital micromirror devices (DMD), and the like. However, it is not limited to this.

Note that a display device means a device having a display element. Note that the display device may include a plurality of pixels including display elements. Note that the display device may include a peripheral driving circuit that drives a plurality of pixels. Note that a peripheral driver circuit for driving a plurality of pixels may be formed on the same substrate as the plurality of pixels. The display device includes peripheral driving circuits arranged on a substrate by wire bonding, bumps, or the like, IC chips connected by so-called chip-on-glass (COG), or IC chips connected by TAB or the like. You can stay.
The display device may include a flexible printed circuit (FPC) to which IC chips, resistive elements, capacitive elements, inductors, transistors, and the like are attached. The display device is connected via a flexible printed circuit (FPC) or the like, and a printed wiring board (P
WB). Note that the display device may include an optical sheet such as a polarizing plate or a retardation plate. Note that the display device may include a lighting device, a housing, an audio input/output device, an optical sensor, and the like. Here, a lighting device such as a backlight unit includes a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, a light source (LED, cold cathode tube, etc.), a cooling device (water cooling type,
air-cooled type), etc. may be included.

The lighting device is a device having a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, a light source (LED, cold cathode tube, hot cathode tube, etc.), a cooling device, and the like.

Note that a light-emitting device is a device having a light-emitting element or the like. In the case where a light-emitting element is used as a display element, the light-emitting device is one specific example of the display device.

The reflecting device means a device having a light reflecting element, a light diffraction element, a light reflecting electrode, or the like.

Note that a liquid crystal display device refers to a display device having a liquid crystal element. The liquid crystal display device has
There are direct view type, projection type, transmissive type, reflective type, semi-transmissive type and so on.

Note that a driving device means a device having a semiconductor element, an electric circuit, or an electronic circuit. For example, a transistor that controls the input of a signal from a source signal line into a pixel (sometimes called a selection transistor, a switching transistor, etc.), a transistor that supplies voltage or current to a pixel electrode, and a voltage or current to a light-emitting element. is an example of a driving device. Furthermore, a circuit that supplies a signal to a gate signal line (sometimes called a gate driver, a gate line driver circuit, etc.), a circuit that supplies a signal to a source signal line (sometimes called a source driver, a source line driver circuit, etc.) ) is an example of a driving device.

Note that the display device, the semiconductor device, the lighting device, the cooling device, the light-emitting device, the reflecting device, the driving device, and the like may overlap each other. For example, a display device may have a semiconductor device and a light emitting device. Alternatively, a semiconductor device may have a display and a driver.

When explicitly describing that B is formed on A or B is formed on A, it is limited to B being formed on A in direct contact with it. not. A case where they are not in direct contact, that is, a case where another object intervenes between A and B shall be included.
Here, A and B are objects (for example, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).

Therefore, for example, when it is explicitly stated that layer B is formed on layer A (or on layer A), layer B is formed directly on layer A. and a case where another layer (for example, layer C or layer D) is formed in direct contact with layer A, and layer B is formed in direct contact thereon. In addition, another layer (for example, layer C, layer D, etc.) may be a single layer or a multilayer.

Furthermore, the same applies to the case where it is explicitly described that B is formed above A, and is not limited to B being in direct contact with A. It shall include the case where another object intervenes. Thus, for example, above layer A, layer B is formed,
In this case, the layer B is formed in direct contact with the layer A, and another layer (for example, layer C or layer D) is formed in direct contact with the layer A. and the case where the layer B is formed in direct contact with the . In addition, another layer (for example, layer C, layer D, etc.) may be a single layer or a multilayer.

It should be noted that when it is explicitly stated that B is formed directly on A, it includes the case where B is formed directly on A, and there is another If there is an object intervening, it shall not be included.

It should be noted that the same applies to the case where B is under A or B is under A.

In addition, it is preferable to use the singular number for items explicitly described as the singular number. However, it is not limited to this, and may be plural. Similarly, for those explicitly described as plural, the plural is preferred. However, it is not limited to this, and may be singular.

According to the present invention, it is possible to improve the viewing angle characteristics compared to the conventional art while maintaining the performance of the display device. Alternatively, the present invention can provide a highly reliable display device. Alternatively, the present invention can provide a high-contrast display device. Alternatively, the present invention can provide a lightweight display device. Alternatively, the present invention can provide a small-sized display device. Alternatively, the present invention can provide a display device with high luminance. Alternatively, according to the present invention, a display device with low power consumption can be provided. Alternatively, the present invention can provide a display device with a high aperture ratio. Alternatively, according to the present invention, a display device with low manufacturing cost can be provided.

FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a voltage dividing element included in a pixel circuit of a display device of the invention; 4A and 4B are diagrams for explaining a display device of the present invention; FIG. 4 is a diagram for explaining an example of a top layout of pixels of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining an example of a top layout of pixels of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; FIG. 4 is a diagram for explaining a pixel circuit of a display device of the present invention; The figure explaining this invention. 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(Embodiment 1)
In this embodiment mode, the structure and operation of a pixel circuit included in a liquid crystal display device of the present invention will be described with reference to the drawings. The pixel circuit of the liquid crystal display device of the present invention has a plurality of liquid crystal elements in one pixel, and has a configuration in which different voltages are applied to each of these liquid crystal elements. Specifically, one or both of a capacitative element and a resistive element connected to the liquid crystal element is provided to vary the voltage applied to the liquid crystal element.

However, display elements are not limited to liquid crystal elements, and various display elements (e.g., light emitting elements (EL
elements (EL elements containing organic and inorganic substances, organic EL elements, inorganic EL elements), electron-emitting elements, electrophoretic elements, etc.) can be used.

There are various liquid crystal operation modes to which this embodiment can be applied. For example, TN
(Twisted Nematic) mode, IPS (In-Plane-Switch
ing) mode, FFS (Fringe Field Switching) mode, M
VA (Multi-domain Vertical Alignment) mode, P
VA (Patterned Vertical Alignment), CPA (Con
Tiny Pinwheel Alignment) mode, ASM (Axial
ly Symmetric aligned Micro-cell) mode, OCB (
Optical Compensated Birefringence) mode, FL
C (Ferroelectric Liquid Crystal) mode, AFLC (
Anti-Ferroelectric Liquid Crystal) and the like. However, it is not limited to this. Note that the liquid crystal to which the CPA mode is applied is an ASV (Advance
d Super View) It is sometimes called a liquid crystal.

FIG. 1A shows an example of the structure of one pixel included in the liquid crystal display device of the invention. pixel 100
is a first switch 101, a second switch 102, a first liquid crystal element 103, a second liquid crystal element 104, a third liquid crystal element 105, a first capacitive element 106, and a second and a capacitor 107 .

The first wiring 108 is connected to the first electrode of the first liquid crystal element 103 and the first electrode of the first capacitor 106 through the first switch 101 . The second wiring 109 and the second
A first electrode of the liquid crystal element 104 and a first electrode of the second capacitor 107 are connected through the second switch 102 . The second electrode of the first capacitor 106 is the second capacitor 1
07 and the first electrode of the third liquid crystal element 105 .

Second electrodes of the first liquid crystal element 103 , the second liquid crystal element 104 , and the third liquid crystal element 105 are connected to a common electrode 111 .

The first wiring 108 and the second wiring 109 function as signal lines. Accordingly, image signals are normally supplied to the first wiring 108 and the second wiring 109 . However, it is not limited to this. A constant signal may be supplied regardless of the image.

The first switch 101 and the second switch 102 are not particularly limited as long as they function as switches. For example, a transistor can be used. A case where transistors are used as the first switch 101 and the second switch 102 will be described below (
See FIG. 1(B)). When a transistor is used, its polarity may be either P-channel type or N-channel type. For example, it is assumed that an N-channel transistor becomes conductive between the source and the drain when the voltage between the gate and the source (V _gs ) exceeds the threshold voltage (V _th ). Note that the drain-source voltage of a transistor is denoted as _Vds .

FIG. 1B shows the case of using an N-channel transistor as a switch, and FIG. 1C shows the case of using a P-channel transistor as a switch. 1B and 1C, the first switch 101N (or the first switch 101P) and the second switch 10
A gate of 2N (or the second switch 102P) is connected to the third wiring 110 . The third wiring 110 functions as a scanning line.

Note that two scanning lines may be provided as shown in FIG. The circuit shown in FIG. 49 is similar to the circuit shown in FIG. 8 in which two signal lines are provided.

Note that the case where a P-channel transistor is used as a switch is shown only in FIG. 1, but it is not limited to this. Also in other figures, at least one of the transistors can be replaced with a P-channel transistor.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

A video signal is input to the first wiring 108 and the second wiring 109 . A scanning signal is input to the third wiring 110 . The scanning signal is an H level or L level digital voltage signal. When the first switch 101 is an N-channel transistor, the H of the scanning signal
The level is a potential at which the first switch 101 and the second switch 102 can be turned on, and the L level of the scanning signal is a potential at which the first switch 101 and the second switch 102 can be turned off. Alternatively, when the first switch 101 and the second switch 102 are P-channel transistors, the H level of the scanning signal is a potential that can turn off the first switch 101 and the second switch 102, and the L level of the scanning signal is a potential that can turn off the first switch 101 and the second switch 102. is the first switch 101 and the second switch 1
02 can be turned on. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And this video signal current can be either analog or digital. It is desirable that the video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 100 will be described separately when the first switch 101 and the second switch 102 are on and when the first switch 101 and the second switch 102 are off.

When the first switch 101 is on, the first wiring 108 and the first electrode (pixel electrode) of the first liquid crystal element 103 and the first electrode of the first capacitor 106 are connected. electrically connected. When the second switch 102 is on, the second wiring 109 and the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitor 107 are connected. electrically connected. Therefore, the video signal is transmitted from the first wiring 108 to the first liquid crystal element 103 .
and the first electrode of the first capacitor 106 . Alternatively, a video signal is input from the second wiring 109 to the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitor 107 . Therefore, the potential V ₁₀₃ of the signal input to the first liquid crystal element 103 is approximately equal to the potential input from the first wiring 108, and the second
The potential V ₁₀₄ of the signal input to the liquid crystal element 104 is approximately equal to the potential input from the second wiring 109 . Further, the potential V ₁₀₅ of the first electrode of the third liquid crystal element 105 has a value divided by the first capacitor 106 and the second capacitor 107 . Here, the capacitance value of the first capacitor 106 is C ₁₀₆ and the capacitance value of the second capacitor 107 is C ₁₀₇ . Then V ₁₀₅ =ΔV×C ₁₀₇ /(C ₁₀₆ +C ₁₀₇ )+V ₁₀₃ . here,
ΔV=V ₁₀₄ −V ₁₀₃ . However, this is the case where there is no initial charge in each capacitive element.
Here, if C ₁₀₆ and C ₁₀₇ are of the same magnitude, V ₁₀₅ is equal to V ₁₀₃ and V ₁₀
Half the sum of ₄ . Assuming that the potential of the common electrode is 0, the voltage applied to the first liquid crystal element is V ₁₀₃ , the voltage applied to the second liquid crystal element is V ₁₀₄ , and the voltage applied to the third liquid crystal element is V ₁₀₅ =(V ₁₀₃ +V ₁₀₄ )/2. When the signal input from the first wiring 108 and the signal input from the second wiring 109 have different potentials, different voltages can be applied to the liquid crystal elements, and the alignment states of the liquid crystal elements can be different. can let Therefore, it is preferable that the signal input from the first wiring 108 and the signal input from the second wiring 109 have different potentials.

Thus, by supplying two signals with different potentials and using a capacitor, the voltage can be divided inside the pixel and an intermediate voltage (third voltage) between the two signals can be generated.
By applying the third voltage to the third liquid crystal element 105, the liquid crystal can be easily controlled. Furthermore, the third voltage is a voltage between the voltage applied to the first liquid crystal element 103 and the voltage applied to the second liquid crystal element 104 . Therefore, appropriate gradation can be displayed regardless of the gradation to be displayed. Appropriate gradation is displayed regardless of whether the polarity of the image signal is positive (when the image signal is higher than the common electrode) or negative (when the image signal is lower than the common electrode). be able to.

Furthermore, the third liquid crystal element 105 can be controlled by generating a third voltage while suppressing an increase in scanning lines, signal lines, transistors, and the like. This makes it possible to increase the aperture ratio,
Power consumption can be reduced. In addition, since the pixels can be laid out with a margin, it is possible to reduce defects such as short circuits that may occur due to dust generated in the manufacturing process, thereby improving the yield. As a result, manufacturing costs can be reduced. In addition, since the third liquid crystal element 105 can be controlled without newly providing a wiring functioning as a signal line for controlling the third liquid crystal element, the number of connections between the glass substrate and an external driver circuit is increased. do not. As a result, high reliability can be maintained.

Note that the capacitance values of the first capacitor 106 and the second capacitor 107 are preferably substantially the same. Since the capacitance values of the two capacitive elements are approximately equal, the divided potential becomes an intermediate value of the potentials supplied to the two capacitive elements. If there is a difference in the capacitance value, the potential is biased to one side, and the liquid crystal element cannot be uniformly controlled. Therefore, it is desirable that the capacitance value of the first capacitor 106 and the capacitance value of the second capacitor 107 are substantially equal. However, it is not limited to this.

When the first switch 101 is off, the first wiring 108 and the first electrode (pixel electrode) of the first liquid crystal element 103 and the first electrode of the first capacitor 106 are connected. electrically cut off. When the second switch 102 is off, the second wiring 109 and the first electrode (pixel electrode) of the second liquid crystal element 104 and the first electrode of the second capacitor 107 are connected. electrically cut off. Therefore, the first electrode of the first liquid crystal element 103 and the first capacitive element 106
, the first electrode of the second liquid crystal element 104, and the first electrode of the second capacitor 107 are in a floating state. The third liquid crystal element 105 is connected to the first liquid crystal element 103 through the first capacitor 106 . However, the charge stored in the third liquid crystal element 105 does not leak to the first liquid crystal element 103 due to the law of conservation of electric charge. Similarly,
The third liquid crystal element 105 is connected to the second liquid crystal element 104 through the second capacitor 107 . However, due to the charge conservation law, the charge stored in the third liquid crystal element 105 is
There is no leakage to the second liquid crystal element 104 . Therefore, the first to third liquid crystal elements hold the potential of the signal input immediately before.

Note that the transmittance of the first liquid crystal element 103, the second liquid crystal element 104, and the third liquid crystal element 105 corresponds to the video signal.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Note that each liquid crystal element may be divided into a plurality of parts. For example, FIG. 11 shows the case where the third liquid crystal element 105 is divided into a third liquid crystal element 105a and a fourth liquid crystal element 105b.
shown in Similarly, the first liquid crystal element 103 and the second liquid crystal element 104 may also be divided into a plurality of pieces. The same applies to figures other than FIG.

Note that in FIGS. 1 and 11, when the first switch 101 and the second switch 102 are transistors, their gates are connected to the third wiring 110 . but,
It is not limited to this. The gate of the first switch 101 and the gate of the second transistor may be connected to separate wirings (see FIG. 49). The same applies to figures other than FIGS. 1 and 11. FIG.

Note that although the first switch 101 and the second switch 102 are connected to different signal lines in FIGS. 1 and 11, the present invention is not limited to this. As shown in FIG. 8 or 17, the first switch 101 and the second switch 102 may be connected to the same wiring. The same applies to figures other than FIGS. 1 and 11. FIG.

Although the liquid crystal element exhibits voltage retention characteristics, the retention rate is not 100%. Therefore, in FIGS. 1 and 11, voltage may be held by disposing a capacitive element serving as a holding capacitor (hereinafter simply referred to as a holding capacitor) in each liquid crystal element. The storage capacitors may be arranged for all the liquid crystal elements, or may be arranged for only some of the liquid crystal elements. A storage capacitor is arranged between each pixel electrode and a wiring functioning as a capacitor line connected thereto. Each storage capacitor may be connected to a different capacity line, or may be connected to the same capacity line. Alternatively, some of the holding capacitors may be connected to the same capacitive line and the other holding capacitors may be connected to different capacitive lines. Also, the capacitor line may be shared with another pixel. For example, pixels in the previous row and pixels in the next row can be shared. By sharing a capacitor line between different pixels, the number of wires can be reduced and the aperture ratio can be improved. Also, the capacitor line may be shared with the scanning line. By sharing the capacitance lines with the scanning lines, the number of wirings can be reduced and the aperture ratio can be improved. When the capacitor line is shared with the scanning line, it is desirable to use the scanning line of the pixels in the adjacent row (pixels in the previous row). This is because the signal selection for the (i−1)th row (one previous row) has already been completed when the pixels of the ith row are selected. When the liquid crystal is IPS, FFS, or the like, the common electrode is arranged on the substrate on which the transistors are formed. Therefore, the capacitance line may be shared with the common electrode. By sharing the capacitance line with the common electrode, the number of wirings can be reduced and the aperture ratio can be improved. note that,
The storage capacitor may be divided into a plurality of parts, like the liquid crystal element in FIG. The same applies to figures other than FIGS. 1 and 11. FIG.

Next, a display device having the pixel 100 in FIG. 1 described above will be described with reference to FIG.

The display device includes a signal line driver circuit 1911 , a scanning line driver circuit 1912 and a pixel portion 1913 . In the pixel portion 1913, first wirings S1_1 to Sm_1, second wirings S1_2 to Sm_2, and the scanning line driver circuit 19 are arranged extending in the column direction from the signal line driver circuit 1911.
12, third wirings G1 to Gn extending in the row direction, and pixels 1914 arranged in a matrix. The first and second wirings function as signal lines. The third wiring functions as a scanning line. Each pixel 1914 is connected to the first wiring Sj_1 (signal line S1
_1 to Sm_1), the second wiring Sj_2 (any one of the signal lines S1_2 to Sm_2), and the third wiring Gi (any one of the scanning lines G1 to Gn). .

Note that the first wiring Sj_1, the second wiring Sj_2, and the third wiring Gi correspond to the first wiring 108, the second wiring 109, and the third wiring 110 in FIG. 1, respectively.

When a row of pixels to be operated is selected by a signal output from the scanning line driver circuit 1912, pixels belonging to the same row are selected at the same time. A video signal output from the signal line driver circuit 1911 is written to the pixels in the selected row. At this time, a potential corresponding to luminance data of each pixel is supplied to the first wirings S1_1 to Sm_1 and the second wirings S1_2 to Sm_2.

For example, when the i-th data write period ends, the signal is written to the pixels belonging to the (i+1)-th row. Then, the pixels in the i-th row, for which the data writing period has ended, have transmittance according to the signal.

Note that a plurality of signal line driver circuits 1911 or scanning line driver circuits 1912 may be arranged. For example, the first wiring Sj_1 (one of the signal lines S1_1 to Sm_1)
may be driven by the first signal line driver circuit, and the second wiring Sj_2 (one of the signal lines S1_2 to Sm_2) may be driven by the second signal line driver circuit. In that case, the pixel unit 191
3 may be sandwiched between the first signal line driver circuit and the second signal line driver circuit. For example, a first signal line driver circuit is arranged on one side of the main surface of the substrate, and a second signal line driver circuit is arranged on the opposite other side, and the signal line driver circuit is sandwiched between the two signal line driver circuits. Pixel part 1 in the area
913 may be arranged.

In order to suppress deterioration of the liquid crystal material and display unevenness such as flicker, the polarity of the voltage applied to the pixel electrode is inverted with respect to the potential of the common electrode (common potential) in the liquid crystal capacitor at regular intervals. It is preferable to use an inversion drive in which the voltage is shifted and driven. In this specification,
When the potential of the pixel electrode is higher than that of the common electrode, a positive voltage is applied to the liquid crystal capacitor, and when the potential of the counter electrode is higher than that of the pixel electrode, a negative voltage is applied to the liquid crystal capacitor. The image signal input from the signal line when a positive voltage is applied to the liquid crystal capacitor is defined as a positive signal, and the image signal input via the signal line when a negative voltage is applied is defined as a negative signal. Notation as a sex signal. Examples of inversion drive include frame inversion drive, source line inversion drive, gate line inversion drive, dot inversion drive, and the like.

Frame inversion driving is a driving method in which the polarity of the voltage applied to the liquid crystal capacitor is inverted every frame period. Note that one frame period corresponds to a period in which an image of one pixel is displayed, and the period is not particularly limited. It is preferable to:

Further, the source line inversion driving means inverting the polarity of the voltage applied to the liquid crystal capacitors belonging to the pixels connected to the same signal line with respect to the liquid crystal capacitors belonging to the pixels connected to the adjacent signal line. This driving method performs frame inversion for each pixel. On the other hand, in gate line inversion driving, the polarity of the voltage applied to the liquid crystal capacitors belonging to the pixels connected to the same wiring functioning as the scanning line is changed with respect to the liquid crystal capacitors belonging to the pixels connected to the adjacent scanning line. invert,
Furthermore, it is a driving method in which frame inversion is performed for each pixel.

Dot inversion driving is a driving method for inverting the polarity of a voltage applied to a liquid crystal capacitor between adjacent pixels, and is a driving method combining source line inversion driving and gate line inversion driving.

By the way, the above frame inversion drive, source line inversion drive, gate line inversion drive,
When dot inversion driving or the like is employed, the width of the potential required for the image signal written to the signal line is doubled compared to when inversion driving is not performed. Therefore, in order to solve this problem, in the case of frame inversion driving or gate line inversion driving, common inversion driving for inverting the potential of the counter electrode may be adopted.

Common inversion driving is a driving method that changes the potential of the common electrode in synchronization with the inversion of the polarity applied to the liquid crystal capacitor. width can be reduced.

Further, one pixel may have a plurality of pixel configurations described above. For example, one pixel may have a plurality of sub-pixels, and these sub-pixels may be used to express the gradation of one pixel. Signal lines connected to different sub-pixels may be shared between sub-pixels. By supplying different potentials to the capacitance lines connected to the sub-pixels, different voltages can be applied to the liquid crystal capacitors belonging to the respective sub-pixels. In this way
It is also possible to further improve the viewing angle by utilizing the difference in liquid crystal orientation in each sub-pixel.

Note that although the holding capacitors are not clearly shown in FIG. 1, it is desirable to arrange the holding capacitors as described above. By providing the storage capacitor, the influence of leakage current of the liquid crystal element can be reduced, and the potential can be easily held. Also, the influence of switching noise such as feedthrough can be reduced. FIG. 16 shows a case where a holding capacitor is arranged in the circuit of FIG. 1 as an example of the holding capacitor.

In FIG. 16, the pixel 400 includes a first switch 401, a second switch 402,
A first liquid crystal element 403, a second liquid crystal element 404, a third liquid crystal element 405, a first capacitor 406, a second capacitor 407, a third capacitor 408, and a fourth capacitive element 4 of
09 and a fifth capacitor 417 .

A first wiring 410 connects the first electrode of the first liquid crystal element 403 , the first electrode of the first capacitor 406 , and the first electrode of the second capacitor 407 through the first switch 401 . It is connected to the. A second wiring 411 connects the first electrode of the second liquid crystal element 404 , the first electrode of the third capacitor 408 , and the first electrode of the fourth capacitor 409 through the second switch 402 . It is connected to the. A second electrode of the first capacitor 406 and a second electrode of the third capacitor 408 are connected to a first electrode of the third liquid crystal element 405 and a first electrode of the fifth capacitor 417 . ing. A second electrode of the second capacitor 407 is connected to a fourth wiring 413 and a second electrode of the fourth capacitor 409 is connected to a fifth wiring 414 . Fifth capacitive element 417
A second electrode of is connected to a sixth wiring 415 .

Second electrodes of the first liquid crystal element 403 , the second liquid crystal element 404 , and the third liquid crystal element 405 are connected to a common electrode 416 .

The first wiring 410 and the second wiring 411 function as signal lines. Therefore, the first
An image signal is normally supplied to the wiring 410 and the second wiring 411 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 412 functions as a scanning line. The fourth wiring 413, the fifth wiring 414, and the sixth wiring 415 function as capacitor lines.

The first switch 401 and the second switch 402 are not particularly limited as long as they function as switches. For example, a transistor can be used. A case where transistors are used as the first switch 401 and the second switch 402 will be described below.
When a transistor is used, its polarity may be either P-channel type or N-channel type.

FIG. 16B shows the case of using an N-channel transistor as a switch. Figure 16
In (B), gates of the first switch 401N and the second switch 402N are connected to a third wiring 412 . The third wiring 760 functions as a scanning line.

Note that storage capacitors may be arranged in all the liquid crystal elements as shown in FIG. 16, but the present invention is not limited to this. For example, as shown in FIG. 7, storage capacitors may be arranged only in some liquid crystal elements. Note that each storage capacitor may be connected to a different capacity line, may be connected to the same capacity line, or may be partially connected to the same capacity line and partially connected to a different capacity line. good too. Also, the capacitor line may be shared with another pixel. For example, pixels in the previous row and pixels in the next row can be shared. By sharing a capacitor line between different pixels, the number of wirings can be reduced and the aperture ratio can be improved. Alternatively, the capacitance line may be shared with the scanning line. By sharing the capacitance lines with the scanning lines, the number of wirings can be reduced and the aperture ratio can be improved. When the capacitor line is shared with the scanning line, it is desirable to use the scanning line of adjacent pixels (pixels in the previous row). This is because the signal selection for the (i−1)th row (one previous row) has already been completed when the pixels of the ith row are selected. When the liquid crystal is IPS, FFS, etc., the common electrode is arranged on the substrate on which the transistor is formed. Therefore, the capacitance line may be shared with the common electrode. By sharing the capacitance line with the common electrode, the number of wirings can be reduced and the aperture ratio can be improved.

Note that it is desirable that a constant potential be supplied to the capacitor line. However, it is not limited to this. For example, in FIG. 7, each capacitor line, that is, the fourth wiring 413 and the fifth wiring 414 may be supplied with a signal that periodically changes multiple times during one frame period. Then, mutually inverted signals may be applied to each capacitor line, that is, the fourth wiring 413 and the fifth wiring 414 . As a result, the effective voltage applied to the first liquid crystal element 404, the second liquid crystal element 403, and the like can be changed.

Note that although there are two wirings functioning as capacitor lines in FIG. 16, the present invention is not limited to this. Capacitance lines can be grouped together. Furthermore, the common electrode and the capacitor line can be shared. This is because the common electrode and the capacitor line are not particularly limited except that they must be kept at the same potential. FIG. 50 shows a case where the capacity lines are combined into one and the common electrode and the capacity line are shared. FIG. 50 has the same effect as FIG.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Note that transistors used as the first switch and the second switch are connected to different signal lines in other drawings such as FIG. 1 used for the above description, but the present invention is not limited to this. These may be connected to the same signal line. For example, FIG. 8 shows an example in which the two signal lines provided in FIG. 1 are replaced by one and a plurality of scanning lines are provided. Alternatively, FIG. 17 shows an example in which the scanning lines in FIG. 8 are combined into one line.

Note that in FIGS. 8 and 17, it is also possible to arrange storage capacitors in different liquid crystal elements as in FIGS. 7 and 16 described above. As an example, FIGS. 18 and 19 show an example in which storage capacitors are arranged in the first and second liquid crystal elements in the same manner as in FIG.

1 and 7 can also be applied to FIGS. 8, 16, 17 and 18. FIG.

In FIG. 8, the pixel 450 includes a first switch 451, a second switch 452, a first liquid crystal element 453, a second liquid crystal element 454, a third liquid crystal element 455, and a first capacitor. It has an element 456 and a second capacitor 457 .

A first wiring 458 , a first electrode of the first liquid crystal element 453 and a first electrode of the first capacitor 456 are connected through the first switch 451 . Also, the first wiring 45
8, the first electrode of the second liquid crystal element 454 and the first electrode of the second capacitive element 457,
It is connected via a second switch 452 . A second electrode of the first capacitor 456 and a second electrode of the second capacitor 457 are connected to a first electrode of the third liquid crystal element 455 .

Note that a transistor can be used as the switch. First switch 451N
is connected to the second wiring 459 . The gate of the second switch 452N is the third
is connected to the wiring 460 of .

Second electrodes of the first liquid crystal element 453 , the second liquid crystal element 454 , and the third liquid crystal element 455 are connected to the common electrode 461 .

The first wiring 458 functions as a signal line. Therefore, an image signal is normally supplied to the first wiring 458 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The second wiring 459 and the third wiring 460 function as scan lines.

First, consider the operations of FIGS. First, an active signal is supplied to the third wiring 460 to turn on the second switch 452 . Here, an active signal means a signal that can turn on the second switch 452 . When the second switch 452 is turned on, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the second liquid crystal element 454 and the first electrode of the second capacitor 457. .

Next, the second switch 452 is turned off, an active signal is supplied to the second wiring 459, and the first switch 451 is turned on. The active signal here means the second switch 4
A signal that can turn on 52. Then, a video signal is supplied from the first wiring 458 to the first electrode (pixel electrode) of the first liquid crystal element 453 and the first electrode of the first capacitor 456 . The video signal supplied at this time preferably has a different potential than when the second switch 452 is turned on. Different potentials allow different voltages to be supplied to the liquid crystal elements, thereby improving the viewing angle.

Note that when the first switch 451 is on, the third liquid crystal element 455 is capacitively coupled to the pixel electrode of the first liquid crystal element 453 through the first capacitor 456 . Therefore, the potential of the pixel electrode of the third liquid crystal element 455 changes according to the voltage supplied from the first wiring 458 when the first switch 451 is on.

Similarly, when the first switch 451 is on, the second liquid crystal element 454 is connected to the pixel electrode of the first liquid crystal element 453 via the first capacitive element 456 and the second capacitive element 457 . capacitively coupled. Therefore, the potential of the pixel electrode of the second liquid crystal element 454 changes according to the voltage supplied from the first wiring 458 when the first switch 451 is on.

Next, the first switch 451 is turned off, and the potential of each liquid crystal element is held.
By operating in this manner, different voltages can be applied to the respective liquid crystal elements. As a result, the viewing angle can be widened. However, the driving method is not limited to this. It can be driven by various methods such as the timing of turning on and off each transistor and the potential of the signal line.

In addition, in FIG. 18, it is desirable that a constant potential is supplied to each capacitor line.
However, it is not limited to this. For example, during one frame period, each capacitor line, ie, the first capacitor line and the second capacitor line, may be supplied with a signal that periodically changes multiple times. and,
Inverted signals may be applied to each capacitance line, that is, the first capacitance line and the second capacitance line. As a result, the effective voltage applied to the first liquid crystal element 453, the second liquid crystal element 454, and the like can be changed. By operating in this manner, the potentials of the respective liquid crystal elements can be made different. As a result, the viewing angle can be widened.

Next, consider the operation of FIGS. 17 and 19. FIG.

An active signal is supplied to the second wiring 459 to turn on the first switch 451 and the second switch 452 . Then, the first electrode (pixel electrode) of the first liquid crystal element 453,
A video signal is supplied from a first wiring 458 to the first electrode of the first capacitor 456 , the first electrode (pixel electrode) of the second liquid crystal element 454 , and the first electrode of the second capacitor 457 . supplied.

At this time, when transistors are used for the first switch 451 and the second switch 452, ON resistance is generated. The ON resistance of the first switch 451 is desirably higher than the ON resistance of the second switch 452 . A high on-resistance of a transistor means that the ratio of channel width to channel length L (W/L) is small. By increasing the on-resistance of the transistor in this way, the potential of the pixel electrode of each liquid crystal element is determined by the balance of the leakage currents of the capacitive elements, the storage capacitors, and the like. Also, different voltages can be applied to each liquid crystal element, and the viewing angle can be improved. However, the present invention is not limited to this, and the first switch 451 and the second switch 452 may have approximately the same on-resistance.

Next, the first switch 451 and the second switch 452 are turned off, and the voltage applied to each liquid crystal element is held.

By operating in this way, the voltage applied to each liquid crystal element can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. It can be driven by various methods such as the timing of turning on and off each transistor and the potential of the signal line.

Note that in FIG. 19, it is desirable that a constant potential be supplied to each capacitor line.
However, it is not limited to this. For example, during one frame period, each capacitor line, that is, the first capacitor line 463 and the second capacitor line 465 may be supplied with a signal that periodically changes multiple times. Then, mutually inverted signals may be applied to each capacitor line, that is, the first capacitor line 463 and the second capacitor line 465 . As a result, the first liquid crystal element 453 and the second liquid crystal element 4
The effective voltage applied to 54 etc. can be varied. By operating in this way, the potential of each liquid crystal element can be made different. As a result, the viewing angle can be widened.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

FIG. 2 shows an example of a configuration of a pixel circuit included in the liquid crystal display device of the present invention, which is different from that in FIG. The pixel 150 includes a first switch 151, a second switch 152, a first liquid crystal element 153, a second liquid crystal element 154, a third liquid crystal element 155, a first capacitive element 156, and a 2 capacitors 157 and a third capacitor 161 .

A first wiring 158 is connected to the first electrode of the first liquid crystal element 153 and the first electrode of the first capacitor 156 through the first switch 151 . A second wiring 159 is connected to the first electrode of the second liquid crystal element 154 and the first electrode of the second capacitor 157 through the second switch 152 . The second electrode of the first capacitive element 156 is the second capacitive element 1
57 and the first electrode of the third capacitive element 161, and the third capacitive element 1
A second electrode of 61 is connected to a first electrode of the third liquid crystal element 155 .

The second electrodes of the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 are connected to a common electrode.

The first wiring 158 and the second wiring 159 function as signal lines. Therefore, image signals are normally supplied to the first wiring 158 and the second wiring 159 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 160 functions as a scanning line.

The first switch 151 and the second switch 152 are not particularly limited as long as they function as switches. For example, a transistor can be used. The case where transistors are used as the first switch 151 and the second switch 152 will be described below.
When a transistor is used, its polarity may be either P-channel type or N-channel type.

FIG. 2B shows a case where an N-channel transistor is used as a switch. Figure 2 (B
), the gates of the first switch 151 N and the second switch 152 N are connected to the third wiring 110 . The third wiring 160 functions as a scanning line.

2 may have two scanning lines as shown in FIG. 49, as in FIG.
Note that a P-channel transistor can also be used as the switch.

A video signal is input to the first wiring 158 and the second wiring 159 . A scanning signal is input to the third wiring 160 . The scanning signal is an H level or L level digital voltage signal. When the first switch 151 and the second switch 152 are N-channel transistors, the H level of the scanning signal is a potential that can turn on the first switch 151 and the second switch 152, and the L level of the scanning signal is the first switch. 1 switch 151 and a second switch 1
52 can be turned off. Alternatively, the first switch 151 and the second switch 15
2 is a P-channel transistor, the H level of the scanning signal is a potential that can turn off the first switch 151 and the second switch 152, and the L level of the scanning signal is the potential that turns off the first switch 151 and the second switch 152.
51 and the second switch 152 can be turned on. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. or,
The video signal may be current. And this video signal current can be either analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

For the operation of the pixel 150 in FIG. 2, the first switch 151 and the second switch 1
52 is turned on and the case where the first switch 151 and the second switch 152 are turned off will be described separately.

When the first switch 151 is on, the first wiring 158 and the first electrode (pixel electrode) of the first liquid crystal element 153 and the first electrode of the first capacitor 156 are connected. electrically connected. When the second switch 152 is on, the second wiring 159 and the first electrode (pixel electrode) of the second liquid crystal element 154 and the first electrode of the second capacitor 157 are connected. electrically connected. Therefore, the video signal is transmitted from the first wiring 158 to the first liquid crystal element 153
and the first electrode of the first capacitor 156 , and from the second wiring 159 to the first electrode (pixel electrode) and the second electrode of the second liquid crystal element 154 . capacitive element 157
is input to the first electrode of Therefore, the potential V ₁ of the signal input to the first liquid crystal element 153
₅₃ is approximately equal to the potential input from the first wiring 158 , and the potential V ₁₅₄ of the signal input to the second liquid crystal element 154 is approximately equal to the potential input from the second wiring 159 . again,
The potential V ₁₆₁ of the first electrode of the third capacitive element 161 is the same as that of the third liquid crystal element 105 in FIG.
_{, and if C 106 and} C ₁₀₇ are of the same magnitude, the potential V ₁₆₁ of the first electrode of the third capacitive element 161 is equal to V ₁₅₃ and V ₁₅₄ approximately equal to half the sum of Note that the potential of the first electrode of the third liquid crystal element 155 is _V155 . If the potential of the common electrode is 0 here, the voltage applied to the third liquid crystal element 155 is _V155 . V ₁₅₅ has a voltage divided by the third capacitor 161 and the third liquid crystal element 155 . In this way, by using capacitive elements, it is possible to further supply different voltages to the liquid crystal element. In this way, the voltage applied to each liquid crystal element can be made different, and the alignment state of each can be made different.

Thus, by supplying two signals with different potentials and using a capacitor, the voltage can be divided inside the pixel and a third voltage can be generated. By applying the third voltage to the third liquid crystal element 105, the liquid crystal can be easily controlled. Furthermore, the third voltage is a voltage between the voltage supplied to the first liquid crystal element 103 and the voltage supplied to the second liquid crystal element 104 . Therefore, appropriate gradation can be displayed regardless of the gradation to be displayed. Appropriate gradation is displayed regardless of whether the polarity of the image signal is positive (when the image signal is higher than the common electrode) or negative (when the image signal is lower than the common electrode). be able to.

Furthermore, the third liquid crystal element 155 can be controlled by generating the third voltage while suppressing an increase in the number of scan lines, signal lines, transistors, and the like. Thereby, the aperture ratio can be increased and the power consumption can be reduced. In addition, since the pixels can be laid out with a margin, defects such as short circuits caused by dust generated in the manufacturing process can be reduced, and the yield can be improved. As a result, manufacturing costs can be reduced. In addition, since the third liquid crystal element 155 can be controlled without newly providing a signal line, the number of connections between the glass substrate and the external driver circuit does not increase. As a result, high reliability can be maintained.

When the first switch 151 is off, the first wiring 158 and the first electrode (pixel electrode) of the first liquid crystal element 153 and the first electrode of the first capacitor 156 are connected. electrically cut off. When the second switch 152 is off, the second wiring 159 and the first electrode (pixel electrode) of the second liquid crystal element 154 and the first electrode of the second capacitor 157 are connected. electrically cut off. Therefore, the first electrode of the first liquid crystal element 153 and the first capacitive element 156
, the first electrode of the second liquid crystal element 154, and the first electrode of the second capacitor 157 are in a floating state. The third liquid crystal element 155 is different from the first liquid crystal element 153 in that it is the first liquid crystal element.
are connected via the capacitive element 156 and the third capacitive element 161 . However, the charge stored in the third liquid crystal element 105 does not leak to the first liquid crystal element 153 due to the law of conservation of charge. It is connected to the first liquid crystal element 153 through the second capacitive element 157 . However, due to the law of conservation of charge, the charge stored in the third liquid crystal element 155 is stored in the second liquid crystal element 1
There is no leakage toward 54. Therefore, the first to third liquid crystal elements hold the potential of the signal input immediately before.

Note that the first liquid crystal element 153, the second liquid crystal element 154, and the third liquid crystal element 155 have transmittance according to the video signal.

1, the third liquid crystal element 105 in FIG. 1 is replaced with the third capacitive element 161 and the third liquid crystal element 155 in FIG. Equivalent to the case of replacement. Therefore, the contents described with reference to FIG. 1 can also be applied to FIG. For example, as shown in FIG. 15, the series connection of the third capacitive element 161 and the third liquid crystal element 155 may be divided into a plurality of parts. Alternatively, as shown in FIG. 12, the capacitor element may be omitted and only the liquid crystal element may be divided into a plurality of parts.

2, the portion of the third liquid crystal element 105 in FIG. 1 is replaced with the third capacitive element 161 and the third
, and the liquid crystal element 155 are connected in series, but the present invention is not limited to this. It may be replaced with another liquid crystal element. For example, FIG. 13 shows a case where the first liquid crystal element 153 is replaced with a capacitor and a liquid crystal element connected in series. Also in this case, as in FIG. 12, FIG.
, may be divided into a plurality of parts.

FIG. 2 is obtained by replacing the portion of the third liquid crystal element 105 in FIG. Variations similar to 1 are possible. In other words, a storage capacitor may be added to a part of each liquid crystal element as shown in FIG. 7, or a storage capacitor may be added to all liquid crystal elements as shown in FIG. Also, as shown in FIG. 8 or 18, two scanning lines may be combined into one signal line.
Alternatively, as shown in FIG. 19, both scanning lines and signal lines may be integrated into one line.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

FIG. 3 shows an example of a configuration of a pixel circuit included in the liquid crystal display device of the present invention, which is different from others. The pixel 200 includes a first switch 201, a second switch 202, a transistor 203, a first liquid crystal element 204, a second liquid crystal element 205, and a third liquid crystal element 205.
06 , a first capacitor 207 , and a second capacitor 208 .

A first wiring 209 is connected to the first electrode of the first liquid crystal element 204 and the first electrode of the first capacitor 207 through the first switch 201 . The second wiring 210 is the second
are connected to the first electrode of the liquid crystal element 205 and the first electrode of the second capacitor element 208 through the second switch 202 . Also, the second wiring 210 is connected to the first wiring of the third liquid crystal element 206 .
is connected through a transistor 203 to the electrode of . Gates of the first switch 201 , the second switch 202 , and the transistor 203 are connected to a third wiring 211 . A second electrode of the first capacitor 207 is connected to a second electrode of the second capacitor 208 and a first electrode of the third liquid crystal element 206 .

Note that the transistor 203 operates as a switch with higher on-resistance than the first switch 201 and the second switch 202 . In other words, it can be handled in the same way as a switch in which resistance elements are connected in series. However, it is not limited to this. The on-resistance of the transistor 203 may be lower than that of the first switch 201 and the second switch 202 .

Note that although the transistor 203 is an N-channel transistor in FIG. 3, it is not limited to this. That is, the transistor 203 may be a P-channel transistor.

The second electrodes of the first liquid crystal element 204, the second liquid crystal element 205, and the third liquid crystal element 206 are connected to a common electrode.

The first wiring 209 and the second wiring 210 function as signal lines. Therefore, image signals are normally supplied to the first wiring 209 and the second wiring 210 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 211 functions as a scanning line.

The first switch 201 and the second switch 202 are not particularly limited as long as they function as switches. For example, a transistor can be used. In the following description of the case where transistors are used as the first switch 101 and the second switch 102, the polarities of the transistors may be either P-channel or N-channel.

FIG. 3B shows a case where an N-channel transistor is used as a switch. Figure 2 (B
), the gates of the first switch 201 N and the second switch 202 N are connected to the third wiring 110 . The third wiring 211A functions as a scanning line.

2 may have two scanning lines as shown in FIG. 49, as in FIG.
Note that a P-channel transistor can also be used as the switch.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

A video signal is input to the first wiring 209 and the second wiring 210 . A scanning signal is input to the third wiring 211 . The scanning signal is an H level or L level digital voltage signal. When the first and second switches and the transistor 203 are of the N-channel type, the H level of the scanning signal is a potential that can turn on the first to third transistors, and the L level of the scanning signal is the potential for turning on the first and second transistors. It is a potential that can turn off the switch and the transistor 203 . Alternatively, when the first and second switches and the transistor 203 are of the P-channel type, the H level of the scanning signal is a potential at which the first and second switches and the transistor 203 can be turned off, and the L level of the scanning signal is the potential at which the first and second switches and the transistor 203 can be turned off. 1 and second switch, and transistor 2
03 can be turned on. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And this video signal current can be either analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

That is, in FIG. 3, when compared with FIG. 1, the pixel electrode of the third liquid crystal element 206 in FIG.
It can be said that the transistor 203 is added to connect with the wiring 210 of . In the case of FIG. 1, if some noise or leakage current enters the point where the first capacitative element 207 and the second capacitative element 208 are connected, charge will accumulate there. As a result, the voltage applied to the liquid crystal element is affected, and the image quality may deteriorate. However, by adding a transistor 203 as shown in FIG. 3, the accumulated charge can be extracted. As a result, image quality defects such as burn-in can be reduced.

Note that the on-resistance of the transistor 203 is preferably higher than the on-resistance of the first switch 201 or the second switch 202 as described above. A high on-resistance of a transistor means that the ratio (W/L) of the channel width W to the channel length L is small.
By increasing the on-resistance of the transistor in this way, the potential at the point where the first capacitive element 207 and the second capacitive element 208 are connected is controlled by the leakage current of each capacitive element, each holding capacitor, and the like. will be determined by the balance of However, the present invention is not limited to this, and the first to third transistors may be formed with approximately the same size, and a resistor element may be connected in series with the third transistor 203 .

Therefore, the contents described with reference to FIGS. 1 and 2 can also be applied to FIG. For example, FIG. 4 shows a case where FIG. 2 is applied to FIG.

3 and 4, etc., the first switch 201N (or the first switch 251
N), second switch 202N (or second switch 252N) and transistor 203
(Transistor 253) is controlled by the third wiring 211 (or the third wiring 262), but is not limited to this. These may be connected to different wirings and controlled separately. Alternatively, part of it may be connected to another wiring.

Note that although the transistor 203 is connected to the second wiring 210 in FIG. 3, it may be connected to the first wiring 209 . The same applies when the third transistor 203 is connected to the first wiring 209 . Although the transistor 253 is connected to the second wiring 261 in FIG. 4 as in FIG. 3, it may be connected to the first wiring 260 .

Alternatively, another wiring may be provided for connecting the transistors. This case is shown in FIG. In FIG. 5B, two scan lines are provided, and the scan line that controls the first switch 301N and the second switch 302N and the scan line that controls the transistor 303 are different wirings; not. The first switch 301N, the second switch 302N and the transistor 303 may be connected to the same scan line. Therefore, the contents described with respect to other figures such as FIG. 1 can also be applied to FIG. For example, FIG. 6 shows a case where FIG. 2 is applied to FIG.

Note that in FIG. 5, the transistor 303 is preferably turned on when the first switch 301 or the second switch 302 is off; however, the present invention is not limited to this. The transistor 303 may be on while the first switch 301 or the second switch 302 is on, or during a part of the period (preferably the first half) while the first switch 301 or the second switch 302 is on. .

Note that the potential of the fifth wiring 313 is preferably substantially the same as that of the common electrode, but is not limited to this. It is also possible to make the potential substantially equal to the potential of the first wiring 309 or the second wiring 310 .

Note that the fifth wiring 313 can be shared with another wiring. For example, capacitance line,
It can be shared with a scanning line or the like. Note that the shared wiring may be the wiring of another pixel. These can improve the aperture ratio. Note that the contents described with reference to other figures such as FIG. 1 can also be applied to FIG. That is, at least one of the transistors may be a P-channel transistor, and the liquid crystal element may be divided into a plurality of parts.

Note that although the transistor 353 is connected to the third capacitor 359 in FIG.
It is not limited to this. A transistor 353 may be connected between a contact point between the third capacitor 359 and the third liquid crystal element 356 and the fifth wiring 364 . Note that the contents described with reference to other figures such as FIG. 1 can also be applied to FIG.

Note that the above-described first to third liquid crystal elements have transmittances according to video signals.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Although the case where two capacitive elements are connected between the signal lines through the switch has been described so far, the present invention is not limited to this. It is possible to arrange more capacitive elements. By adding a capacitor, the voltage applied to the liquid crystal element can be further varied. By applying the respective voltages to the respective liquid crystal elements, many liquid crystal elements having different applied voltages can be arranged. As a result, the viewing angle can be widened.

FIG. 9 shows an example in which a capacitive element and a liquid crystal element are further added to FIG.
shown in Alternatively, FIG. 20 shows an example in which a capacitive element and a liquid crystal element are additionally arranged with respect to FIG. Further liquid crystal elements may be added. Then, the first liquid crystal element 503 is the third
may be similarly connected to the liquid crystal element 505 of . Similarly, capacitive elements and liquid crystal elements can be added to circuits shown in other drawings. Note that the contents described in the description of other figures can also be applied to FIGS. 9 and 20. FIG.

In FIG. 9, a pixel 500 includes a first switch 501, a second switch 502, a first liquid crystal element 503, a second liquid crystal element 504, a third liquid crystal element 505, and a fourth liquid crystal element. Element 506 , first capacitive element 507 , second capacitive element 508 , and third capacitive element 50
9 , a first wiring 510 , a second wiring 511 , and a third wiring 512 .

A first wiring 510 is connected to the first electrode of the first liquid crystal element 503 and the first electrode of the first capacitor 507 through the first switch 501 . A second wiring 511 connects the first electrode of the second liquid crystal element 504 and the first electrode of the third capacitor 509 to the second switch 50 .
2 is connected. The second electrode of the first capacitor 507 is connected to the second capacitor 508
and the first electrode of the third liquid crystal element 505 . A second electrode of the second capacitor 508 is connected to a second electrode of the third capacitor 509 and a first electrode of the fourth liquid crystal element 506 .

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to a common electrode.

The first wiring 510 and the second wiring 511 function as signal lines. Therefore, the first
An image signal is normally supplied to the wiring 510 and the second wiring 511 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 512 functions as a scanning line.

The first switch 501 and the second switch 502 are not particularly limited as long as they function as switches. For example, when a transistor is used, its polarity may be either P-channel type or N-channel type.

FIG. 9B shows a case where an N-channel transistor is used as a switch. Figure 9 (B
), the gates of the first switch 501N and the second switch 502N are connected to the third wiring 512 . The third wiring 512 functions as a scanning line.

9 may have two scanning lines as shown in FIG. 49, as in FIG.
Note that a P-channel transistor can also be used as the switch.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

Furthermore, the liquid crystal element may be divided into a plurality of parts as shown in FIG. 11 and the like.

Note that the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element
The liquid crystal element 506 has a transmittance corresponding to the video signal.

As described above, it is possible to use four liquid crystal elements per pixel, and it is also possible to further increase the number of liquid crystal elements per pixel. By increasing the number of liquid crystal elements per pixel, various alignment states can be obtained, and a liquid crystal display device having a wider viewing angle can be provided.

Note that FIG. 9 and FIG. 20 describe the case where a liquid crystal element is added by adding a capacitor element. However, it is not limited to this. By increasing the number of transistors, signal lines, etc.,
The number of liquid crystal elements arranged in one pixel can be increased. As an example, FIG. 10 shows a case where a liquid crystal element is added by increasing the number of transistors and signal lines to the circuit of FIG. However, it is not limited to this configuration. Although the signal lines are added without adding the scanning lines in FIG. 10, it is also possible to add the scanning lines without adding the signal lines. FIG. 21 shows a case where a capacitor 584 is added without adding a signal line and placed between the signal line and the fourth liquid crystal element 557 to divide the potential supplied from the signal line. show. In FIG. 22, a capacitor is added without adding a signal line, a capacitor 572 is added between the signal line and the first liquid crystal element 554, and a capacitor is added between the signal line and the first liquid crystal element 554. , the potential supplied from the signal line is divided. With the configurations shown in FIGS. 21 and 22, different voltages can be applied to the four liquid crystal elements without adding signal lines.

Although the fourth liquid crystal element 557 is connected to the first wiring 560 in FIGS. 21 and 22, the fourth liquid crystal element 557 may be connected to the second wiring 561. FIG.

As in the case of FIG. 1, it is possible to additionally arrange liquid crystal elements in the circuits shown in other figures. Note that the contents described in the description of other figures can also be applied to FIG. In other words, a P-channel transistor may be used, or a liquid crystal element may be divided into a plurality of parts.

In FIG. 10, a pixel 550 includes a first switch 551, a second switch 552,
A third switch 553, a first liquid crystal element 554, a second liquid crystal element 555, a third liquid crystal element 556, a fourth liquid crystal element 557, a first capacitor 558, and a second capacitive element 5
59 and .

The first wiring 560 is connected to the first electrode of the first liquid crystal element 554 and the first electrode of the first capacitor 558 through the first switch 551 . A second wiring 561 is connected to the first electrode of the second liquid crystal element 555 and the first electrode of the second capacitor 559 . The third wiring 562 is connected to the first electrode of the fourth liquid crystal element 557 through the third switch 553 . A second electrode of the first capacitor 558 is connected to one of the second electrode of the second capacitor 559 and the first electrode of the third liquid crystal element 556 .

FIG. 10B shows the case of using an N-channel transistor as a switch. Figure 10
In (B), gates of the first switch 551N and the second switch 552N are connected to the fourth wiring 563 . The fourth wiring 563 functions as a scanning line.

10, as in FIG. 1, two scanning lines may be provided as shown in FIG.
Note that a P-channel transistor can also be used as the switch.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

Furthermore, as shown in FIG. 11 and the like, the liquid crystal element may be further divided into a plurality of parts.

The second electrodes of the first liquid crystal element 503, the second liquid crystal element 504, the third liquid crystal element 505, and the fourth liquid crystal element 506 are connected to a common electrode.

The first wiring 560, the second wiring 561, and the third wiring 562 function as signal lines. Therefore, the first wiring 560, the second wiring 561 and the third wiring 562 are normally provided with
An image signal is supplied. However, it is not limited to this. A constant signal may be supplied regardless of the image. The fourth wiring 563 functions as a scanning line.

Note that a capacitor may be provided between the liquid crystal element and a wiring functioning as a signal line. Figure 2
By providing the capacitor 566 as shown in 1, the voltage applied to the liquid crystal element can be varied. Therefore, the first wiring 560 and the third wiring 562 in FIG. 10 can be combined into one.

Note that the position where the capacitive element is additionally arranged is not limited to between the fourth liquid crystal element and the signal line, and as shown in FIG. (eg, the capacitor 565) may be provided. Also in this case, a plurality of signal lines can be combined into one.

As described above, it is possible to use four liquid crystal elements per pixel, and it is also possible to further increase the number of liquid crystal elements per pixel. By increasing the number of liquid crystal elements per pixel, various alignment states can be obtained, and a liquid crystal display device having a wider viewing angle can be provided.

FIG. 32 shows an example of a top view of a pixel of a liquid crystal display device to which the invention is applied. Also, FIG. 33 shows a circuit diagram of FIG. 32 and 33 use the same reference numerals for corresponding parts.

A pixel 1000 shown in FIG. 32 includes a first conductive layer (
A hatch pattern of the third wiring 1013 is shown. ) is provided thereon, a first insulating film (not shown) is provided, a semiconductor film is provided on the first insulating film, and a second conductive layer (first wiring 1 ) is provided on the semiconductor film.
011 hatch pattern. ) is provided, a second insulating film (not shown) is provided on the second conductive layer, and a third conductive layer (shown by the hatch pattern of the first liquid crystal element 1003) is provided on the second insulating film. ) is provided.

In FIG. 33, a pixel 1000 includes a first switch 1001 and a second switch 100.
2, a first liquid crystal element 1003, a second liquid crystal element 1004, and a third liquid crystal element 1005
, a fourth liquid crystal element 1006, a first capacitor 1007, a second capacitor 1008, a third capacitor 1009, a fourth capacitor 1010, a fifth capacitor 1016,
and a sixth capacitor 1017 .

A first wiring 1011 is connected to the fourth liquid crystal element 1006, the first electrode of the first capacitor 1007, and the first electrode of the second capacitor 1008 through the first transistor 1001. . A second wiring 1012 connects the first liquid crystal element 1003 and the fourth capacitor element 1010
and the first electrode of the third capacitor 1009 through the second transistor 1002 . The second electrode of the second capacitive element 1008 is connected to the third capacitive element 100
9, the first electrode of the fifth capacitor 1016, the first electrode of the second liquid crystal element 1004
, the first electrode of the sixth capacitor 1017 , and the first electrode of the third liquid crystal element 1005 . A second electrode of the first capacitor 1007 and a second electrode of the sixth capacitor 1017 are connected to a fifth wiring 1015 . A second electrode of the fifth capacitor 1016 and a second electrode of the fourth capacitor 1010 are connected to a fourth wiring 1014 .

Note that in FIG. 33, all the liquid crystal elements in FIG. 11B are provided with storage capacitors. That is, it can be said that FIG. 11 and FIG. 16 are combined. Therefore, the configuration similar to that of FIG. 1 can be applied to FIG. That is, the wiring functioning as the capacitor line may be shared with the common electrode as shown in FIG. A channel type may be used.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

The first wiring 1011 and the second wiring 1012 function as signal lines. Therefore, the first
An image signal is normally supplied to the wiring 1011 and the second wiring 1012 . However, it is not limited to this. A constant signal may be supplied regardless of the image. third wiring 10
13 functions as a scanning line. The fourth wiring 1014 and the fifth wiring 1015 function as capacitor lines.

By providing pixels such as the top view shown in FIG. 32, each liquid crystal element can have various alignment states, and a liquid crystal display device having a wider viewing angle can be provided.

Note that in this embodiment mode, only the case where all the transistors provided in one pixel have the same conductivity type is described; however, the present invention is not limited to this. That is, transistors provided in one pixel may have different conductivity types.

Furthermore, the type of transistor in this embodiment is not particularly limited, and various types can be used. Therefore, a thin film transistor (TFT) using a crystalline semiconductor film, a thin film transistor using a non-single-crystal semiconductor film typified by amorphous silicon or polycrystalline silicon, a transistor formed using a semiconductor substrate or an SOI substrate, and a MOS transistor, junction transistor, bipolar transistor, transistor using compound semiconductors such as ZnO and a-InGaZnO, transistors using organic semiconductors and carbon nanotubes,
Other transistors can be applied. However, it is preferable to use a transistor with low off-state current. A thin film transistor provided with an LDD region, a thin film transistor having a multi-gate structure, or the like is a transistor with low off-state current. again,
Both the N-channel type and the P-channel type may be used to form a CMOS type switch.

In this embodiment, various drawings have been used for description, but part or all of the content described in each drawing may be applied to part or all of the content described in another drawing. and a combination of
Or you can freely replace it. Furthermore, in the figures described so far, by combining other parts with respect to each part, more configurations are conceivable,
The description of this embodiment does not prevent this.

Similarly, part or all of the content described in each drawing of this embodiment may be applied, combined, or replaced with part or all of the content described in the drawing of another embodiment. etc. can be freely performed. Furthermore, in the drawings of this embodiment, by combining each part with another embodiment, more drawings can be constructed, and the description of this embodiment does not prevent this. .

It should be noted that, in the present embodiment, when part or all of the contents described in the other embodiments are embodied, slightly modified, partially changed, or improved, It provides an example of where it is described, where it is applied, and where it is relevant. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 2)
In Embodiment 1, a new voltage is generated by dividing a voltage using a capacitive element and supplied to the liquid crystal element. However, the element for creating a new voltage is not limited to the capacitive element.
Elements that divide voltage, elements that convert current into voltage, non-linear elements, elements with resistance components,
Various elements such as an element having a capacitive component, an inductor, a diode, a transistor, a resistance element, and a switch can be used. again. A desired circuit can be realized by connecting these in series or in parallel and combining them. Such an element is called a voltage dividing element.

FIG. 23 shows a generalized case where the capacitive element in FIG. 1 is used as a voltage dividing element. Therefore, the contents described in Embodiment 1 can also be applied to FIG.

FIG. 23A shows an example of the structure of a pixel circuit included in the liquid crystal display device of the invention. A pixel 600 includes a first switch 601, a second switch 602, and a first liquid crystal element 601.
03, a second liquid crystal element 604, a third liquid crystal element 605, a first voltage dividing element 606,
and a second voltage dividing element 607 .

A first wiring 608 is connected to the first electrode of the first liquid crystal element 603 and one end of the first voltage dividing element 606 via the first switch 601 . A second wiring 609 is connected to the first electrode of the second liquid crystal element 604 and one end of the second voltage dividing element 607 via a second switch. The first voltage dividing element 606 and the second voltage dividing element 607 are connected in series, and the first electrode of the third liquid crystal element 605 is connected between the first voltage dividing element 606 and the second voltage dividing element 607 . It is connected to the.

The second electrodes of the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 are connected to a common electrode.

FIG. 23B shows the case of using an N-channel transistor as a switch. Figure 23
In (B), gates of the first switch 601N and the second switch 602N are connected to a third wiring 610 . The third wiring 760 functions as a scanning line.

26 may have two scanning lines as shown in FIG. 49, or may use a P-channel transistor as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

The first wiring 608 and the second wiring 609 function as signal lines. Accordingly, image signals are normally supplied to the first wiring 608 and the second wiring 609 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 610 functions as a scanning line.

Note that the first liquid crystal element 603, the second liquid crystal element 604, and the third liquid crystal element 605 have transmittance according to the video signal.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Note that as the first voltage dividing element 606 and the second voltage dividing element 607, various elements can be used in addition to capacitors. For example, an element that divides voltage, an element that converts current into voltage, a nonlinear element, an element that has a resistance component, an element that has a capacitance component, an inductor, a diode, a transistor, a resistance element, a switch, or the like can be used as a voltage dividing element. can. FIG. 30 illustrates an example of a voltage dividing element.

First, as shown in FIGS. 30(J) and (K), an N-channel transistor and a P-channel transistor can be used.

FIG. 30A shows a diode-connected N-channel transistor. Figure 30 (B
) is obtained by reversing the connection direction of FIG. 30(A). FIG. 30(C) is the same as in FIG.
A) and the elements shown in FIG. 30B are connected in parallel. FIGS. 30(D) and 30(E) are obtained by replacing the N-channel type transistors in FIGS. 30(A) and 30(B) with P-channel type transistors. P-channel transistors may be connected in parallel as in FIG. 30C. Alternatively, as shown in FIG. 30F, a P-channel transistor and an N-channel transistor may be connected in parallel.

30(G) and (L) are voltage dividing elements in which a resistance element and a capacitance element are connected in series or in parallel.

In FIGS. 30(H) and (I), a resistance element and a P-channel transistor or an N-channel transistor are connected in series.

Note that the wiring to which the gates of the transistors shown in FIGS. 30H, 30I, 30J, and 30K are connected is not particularly limited. It may be connected to a scanning line, a capacitor line, or a signal line. again,
It may be connected to a scanning line or the like in a row adjacent to the pixel. By controlling the potential of the gate, the resistance value of the voltage dividing element can be controlled.

Figures 30(M) and (N) show diodes. Although there are various types of diodes, diodes that can be used as voltage dividing elements are not particularly limited. For example, PN type, PI
Diodes such as N-type, Schottky-type, MIM-type, and MIS-type can be used. Furthermore, as shown in FIG. 30(O), two diodes may be connected in parallel in opposite directions.

Furthermore, an inductor element shown in FIG. 30(P) may be used, or a resistance element may be used as shown in FIG. 30(Q). As the resistive element, a variable resistance element may be used as shown in FIG. 30(R).

Therefore, in the configuration described in the first embodiment, a new circuit can be configured by replacing the capacitive element with the voltage dividing element shown in FIG. Therefore, the contents described in the first embodiment can also be applied to FIG. 23 and the circuit configured by replacing the capacitive element with a voltage dividing element.

36 to 48 show circuit diagrams configured by replacing the voltage dividing element 606 and the voltage dividing element 607 shown in FIG. 23 with various elements shown in FIG. Therefore, FIGS. 36 to 48 can apply a configuration similar to that of FIG. That is, as shown in FIG. 7, the first electrodes of some or all of the liquid crystal elements may be connected to the capacitance line. The capacitance line may be shared with the common electrode as shown in FIG. The switch can be replaced with a transistor, and the transistor may be of an N-channel type or a P-channel type. When transistors are used, the gates of the transistors may be connected to the same scanning line or to different scanning lines. Further, as shown in FIG. 11, the liquid crystal element may be divided into a plurality of parts. A plurality of signal lines may be provided, or a single signal line may be provided as shown in FIG. Furthermore, FIG. 2 and FIG.
2, etc., the voltage dividing element may be appropriately arranged at an appropriate position.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

Note that the resistance value of the voltage dividing element may not be constant, and may be set so that the resistance value varies depending on time or pixel. In order to change the resistance value, the voltage dividing element preferably has a transistor. When a transistor is used, the gate potential of the transistor may be changed depending on time or pixels.

Note that when a voltage dividing element is connected between the liquid crystal elements, electric charge may leak between the liquid crystal elements when the connection between the signal line and the liquid crystal element is turned off. In order to prevent charge leakage, a voltage dividing element and a switch may be connected in series and connected between the liquid crystal elements. FIG. 24 shows an example of such a case. Note that the connection between the voltage dividing element and the switch may be reversed.

Note that one voltage dividing element and one switch are arranged between the liquid crystal elements, but the present invention is not limited to this. A plurality of them may be arranged. The contents described in Embodiment 1 and FIG. 23 can also be applied to FIG.

A pixel 650 includes a first switch 651, a second switch 652, and a first liquid crystal element 651.
53, a second liquid crystal element 654, a third liquid crystal element 655, a first voltage dividing element 656,
It has a second voltage dividing element 657 , a third switch 658 and a fourth switch 659 .

The first wiring 660 is connected to the first electrode of the first liquid crystal element 653 and one end of the third switch 658 via the first switch 651 . A second wiring 661 is connected to the first electrode of the second liquid crystal element 654 and one end of the fourth switch 659 . A third switch 658 and a fourth switch 659 are connected in series, and between the third switch 658 and the fourth switch 659 are a first voltage dividing element 656 and a second voltage dividing element connected in series. An element 657 is provided and the first electrode of the third liquid crystal element 655 is connected to the first voltage dividing element 656 and the second voltage dividing element 656 .
57.

Second electrodes of the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 are connected to a common electrode.

The first wiring 660 and the second wiring 661 function as signal lines. Accordingly, image signals are normally supplied to the first wiring 660 and the second wiring 661 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 662 functions as a scanning line.

The first switch 651 and the second switch 652 are not particularly limited as long as they function as switches. For example, a transistor can be used. Hereinafter, when transistors are used as the first switch 651 and the second switch 652, their polarities may be either P-channel type or N-channel type.

The third switch 658 and the fourth switch 659 are not particularly limited as long as they function as switches. For example, a transistor can be used. third switch 65
8 and the fourth switch 659 may be P-channel or N-channel.
Channel type is also acceptable.

FIG. 24B shows the case of using an N-channel transistor as a switch. Figure 24
In (B), gates of the first switch 651N and the second switch 652N are connected to the third wiring 662 . The third wiring 662 functions as a scanning line.

24 may have two scanning lines as shown in FIG. 49, or may use a P-channel transistor as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

Note that the first liquid crystal element 653, the second liquid crystal element 654, and the third liquid crystal element 655 have transmittances corresponding to video signals.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Next, FIGS. 23 and 24 show specific examples when the voltage dividing element of FIG. 30 is applied. First, the case of using FIG. 30(J) will be described with reference to FIG. The gate is connected to the scan line. 23 and 24 correspond to those in which the first capacitor 106 and the second capacitor 107 in FIG. 1 are replaced with transistors. Therefore, Embodiment 1, FIG.
3 and FIG. 24 can also be applied to FIG.

A pixel 700 includes a first switch 701, a second switch 702, and a first liquid crystal element 701.
03, a second liquid crystal element 704, a third liquid crystal element 705, and a first transistor 706
, and a second transistor 707 .

A first wiring 708 connects the first electrode of the first liquid crystal element 703 and the first transistor 706 .
is connected through a first switch 701 to either the source or the drain of . A second wiring 709 is connected to the first electrode of the second liquid crystal element 704 and one of the source and the drain of the second transistor 707 through the second switch 702 . The other of the source or drain of the first transistor 706 and the other of the source or drain of the second transistor 707 are connected to the first electrode of the third liquid crystal element 705 . The first and second transistors are connected to a third wiring 710 .

The second electrodes of the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 are connected to a common electrode.

The first wiring 708 and the second wiring 709 function as signal lines. Accordingly, image signals are normally supplied to the first wiring 708 and the second wiring 709 . However, it is not limited to this. A constant signal may be supplied regardless of the image. A third wiring 710 functions as a scanning line.

The first switch 701 and the second switch 702 are not particularly limited as long as they function as switches. For example, a transistor can be used. The case where transistors are used as the first switch 701 and the second switch 702 will be described below. When a transistor is used, its polarity may be either P-channel type or N-channel type.

FIG. 25B shows the case of using an N-channel transistor as a switch. Figure 25
In (B), gates of the first switch 701N and the second switch 702N are connected to a third wiring 710 . The third wiring 710 functions as a scanning line.

25 may have two scanning lines as shown in FIG. 49, or may use a P-channel transistor as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

The first transistor 706 and the second transistor 707 may function as voltage dividing elements, and the polarities of the first transistor 706 and the second transistor 707 may be either P-channel or N-channel.

Next, the operation of pixel 700 will be described. First, selected by the third wiring 710,
First switch 701 and second switch 702 are turned on. Then, the first wiring 7
08 and the second wiring 709, a video signal is supplied. At the same time as the first and second switches, the first transistor 706 and the second transistor 707 are also turned on. Therefore, the first wiring 708 and the second wiring 709 are connected through the transistor. Since each transistor has a resistance component (on-resistance), the voltage is divided by each transistor. At this time, if the ON resistances of the first transistor 706 and the second transistor 707 are high, most of the voltage is applied to these transistors.

Therefore, a potential substantially equal to the potential of the first wiring 708 is applied to the pixel electrode of the first liquid crystal element 703 . More precisely, from the potential of the first wiring 708, the potential of the first switch 701
A potential corresponding to the voltage drop at 1 is applied to the pixel electrode of the first liquid crystal element 703 . Similarly, a potential substantially equal to the potential of the second wiring 709 is applied to the pixel electrode of the second liquid crystal element 704 . More precisely, the potential corresponding to the voltage drop in the second switch 702 from the potential of the second wiring 709 is applied to the pixel electrode of the second liquid crystal element 704 .

The potential of the pixel electrode of the first liquid crystal element 703 and the potential of the pixel electrode of the second liquid crystal element 704 are divided by the first transistor 706 and the second transistor 707 to form the third liquid crystal element. It is supplied to the pixel electrode of the element 705 . If the first transistor 706
and when the on-resistances of the second transistor 707 are substantially equal, the third liquid crystal element 70
5, the potential of the pixel electrode of the first liquid crystal element 703 and the potential of the pixel electrode of the second liquid crystal element 70
4 of the potentials of the pixel electrodes.

Note that when the on-resistances of the first switch 701, the second switch 702, the first transistor 706, the second transistor 707, and the like are small, a large amount of current flows.
Therefore, the first transistor 706 and the second transistor 707, which are transistors for voltage division, preferably have high on-resistance. For example, the first transistor 70
6 or the second transistor 707, the first switch 701 or the second switch 70
2, it is preferable that the ratio (W/L) of the channel width W to the channel length L is smaller. For example, the channel length L of the first transistor 706 or the second transistor 707 may be increased by using a multi-gate structure.

Note that the first transistor 706 and the second transistor 707 desirably have approximately the same on-resistance. Due to the approximately equal on-resistances, the divided voltage is at an intermediate potential. If there is a difference in the on-resistance, it will be biased to one of the potentials, and evenly,
This is because the liquid crystal element cannot be controlled. For example, the ratio (W/L) between the channel width W and the channel length L of the first transistor 706 and the second transistor 707 is preferably approximately equal. However, it is not limited to this.

When the third wiring 710 is in a non-selected state, the first switch 701 and the second switch 70
2, the first transistor 706 and the second transistor 707 are turned off; Then,
The voltage supplied to each liquid crystal element is held. By operating in this way, the voltage applied to each liquid crystal element can be made different. As a result, the viewing angle can be widened. However, the driving method is not limited to this. The timing of turning on/off each transistor, the potential of the signal line, and the like can be controlled by various methods.

Note that since the first transistor 706 and the second transistor 707 are also turned off, electric charge does not leak between the liquid crystal elements. Therefore, it can be said that the first transistor 706 and the second transistor 707 are a single element that realizes the voltage dividing element and the switch in FIG.

Note that the first liquid crystal element 703, the second liquid crystal element 704, and the third liquid crystal element 705 have transmittances corresponding to video signals.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Note that the structures of the first transistor 706 and the second transistor 707 are not limited to the illustrated structures. For example, one or both of the first transistor 706 and the second transistor 707 may have a multi-gate structure. The multi-gate structure makes it easier to adjust the resistance values of the first transistor 706 and the second transistor 707 than in the single-gate structure. Furthermore, the on-resistances of the first transistor 706 and the second transistor 707 can be made higher than in the case of the single gate structure.

Note that the resistance values of the first transistor 706 and the second transistor 707 do not have to be constant, and may be set so that the resistance values vary depending on time or pixels. To change the resistance value, the first transistor 706 and the second transistor 70 functioning as voltage divider elements.
7, the potential of the gate may be changed by time or by pixel.

Although FIGS. 23 to 25 do not clearly show the holding capacitance, as described in FIG. 1 etc.,
A holding volume may be arranged. As an example, FIG. 26 shows a case where a storage capacitor is arranged in each liquid crystal element in FIG.

In FIG. 26, a pixel 750 includes a first switch 751, a second switch 752,
A first liquid crystal element 753, a second liquid crystal element 754, a third liquid crystal element 755, a first transistor 756, a second transistor 757, a first capacitor 762, and a second capacitor element 763 and a third capacitor 764 .

A first wiring 758 is connected to the first electrode of the first liquid crystal element 753 , one of the source or the drain of the first transistor 756 and the first electrode of the third capacitor 764 .
1 is connected. A second wiring 759 is connected to the first electrode of the second liquid crystal element 754 , one of the source and the drain of the second transistor 757 , and the first electrode of the first capacitor 762 . The other of the source or drain of the first transistor 756 and the second
The other of the source and drain of the transistor 757 is connected to the first electrode of the third liquid crystal element 755 and the first electrode of the second capacitor 763 . The first and second switches and the first and second transistors are connected to third wiring 760 . First capacitive element 76
2. Second electrodes of the second capacitor 763 and the third capacitor 764 are connected to a fourth wiring 761 .

Second electrodes of the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 are connected to a common electrode.

The first wiring 758 and the second wiring 759 function as signal lines. Third wiring 760
act as scan lines. A fourth wiring 761 functions as a capacitor line.

The first switch 751 and the second switch 752 are not particularly limited as long as they function as switches. For example, a transistor can be used. first switch 751
And when a transistor is used as the second switch 752, its polarity may be either P-channel type or N-channel type.

FIG. 26B shows the case of using an N-channel transistor as a switch. Figure 26
In (B), gates of the first switch 751N and the second switch 752N are connected to a third wiring 760 . The third wiring 760 functions as a scanning line.

26 may have two scanning lines as shown in FIG. 49, or may use a P-channel transistor as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

The first transistor 756 and the second transistor 757 may function as voltage dividing elements, and the polarities of the first transistor 756 and the second transistor 757 may be either P-channel or N-channel.

Note that the first liquid crystal element 753, the second liquid crystal element 754, and the third liquid crystal element 755 have transmittances corresponding to video signals.

Note that the resistance values of the first transistor 756 and the second transistor 757 do not have to be constant, and the resistance values may be set to be different depending on time or pixels. In order to change the resistance value, the potential of the gates of the first transistor 756 and the second transistor 757 functioning as resistors may be changed depending on time or pixels.

As described above, each liquid crystal element can have a different alignment state, and the viewing angle can be widened.

Note that although the gates of the first and second transistors are connected to the scan line in FIGS. 25 and 26, the present invention is not limited to this. Another wire may be placed and connected to that wire. Alternatively, a plurality of different wirings may be arranged and the gates of the first transistor and the second transistor may be connected to different wirings. FIG. 27B shows the case where the gates of the first transistor and the second transistor in FIG. 27A are connected to the fourth wiring. By doing so, the potentials of the gates of the first transistor and the second transistor can be controlled independently of the first and second switches, and the on-resistances of the first and second transistors can be easily controlled. For example, when a negative video signal (the potential of the video signal is lower than the potential of the common electrode) is input, the voltage between the gate and the source of the first and second transistors becomes very large. Therefore, the on-resistances of the first transistor and the second transistor decrease, and a large amount of current flows, which may increase power consumption. Therefore, when the voltage is divided by turning on the first and second transistors, the negative video signal is input more than the positive video signal (the potential of the video signal is higher than the potential of the common electrode). The gate potentials of the first and second transistors are made lower in the case of input. As a result, it is possible to prevent a large amount of current from flowing.

A pixel 800 includes a first switch 801 , a second switch 802 , a first transistor 803 , a second transistor 804 , a first liquid crystal element 805 , and a second liquid crystal element 805 .
06 and a third liquid crystal element 807 .

A first wiring 808 connects the first electrode of the first liquid crystal element 805 and the first transistor 80 .
3 through a first switch 801 . A second wiring 809 is connected to the first electrode of the second liquid crystal element 806 and either the source or the drain of the second transistor 804 to the second switch 802 . first transistor 80
3 and the other of the source or drain of the second transistor 804 are connected to the first electrode of the third liquid crystal element 807 . The first switch 801 and the second
A gate of the switch 802 is connected to a third wiring 810 . first transistor 8
03 and the gates of the second transistor 804 are connected to a fourth wiring 811 .

Second electrodes of the first liquid crystal element 805, the second liquid crystal element 806, and the third liquid crystal element 807 are connected to a common electrode.

The first wiring 808 and the second wiring 809 function as signal lines. Accordingly, image signals are normally supplied to the first wiring 808 and the second wiring 809 . However, it is not limited to this. regardless of the image. A constant signal may be supplied. The third wiring 810 and the fourth wiring 811 function as scan lines.

The first switch 801 and the second switch 802 are not particularly limited as long as they function as switches. For example, a transistor can be used. first switch 801
And when a transistor is used as the second switch 802, its polarity may be either P-channel type or N-channel type.

FIG. 27B shows the case of using an N-channel transistor as a switch. Figure 27
In (B), gates of the first switch 801N and the second switch 802N are connected to a third wiring 810 . The third wiring 760 functions as a scanning line.

27, as in FIG. 1 and the like, two scanning lines may be provided as shown in FIG.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

The first transistor 803 and the second transistor 804 may function as voltage dividing elements, and the polarities of the first transistor 803 and the second transistor 804 may be either P-channel or N-channel.

Note that when the first transistor 803 and the second transistor 804 are turned on to function as voltage dividing elements, the first transistor 803 and the second transistor 804 are turned on.
04 is preferably operated in the linear region. This is because the on-resistances of the first transistor 803 and the second transistor 804 have appropriate values.

Note that it is preferable that the timing at which the first switch 801 and the second switch 802 are turned on and off and the timing at which the first transistor 803 and the second transistor 804 are turned on and off are substantially the same. However, it is not limited to this. first switch 80
When the first and second switches 802 are turned on, after a short delay, the first transistor 80 is turned on.
3 and the second transistor 804 may be turned on. Accordingly, the period in which the first wiring 808 and the second wiring 809 are connected can be shortened. Therefore, charge can be easily input to the first liquid crystal element 805 and the second liquid crystal element 806 .

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Next, an example in which the contents described in Embodiment 1 are applied to FIG. 25 is shown. An example of a circuit configured by replacing the capacitive element with the voltage dividing element shown in FIG. 30 is shown. FIG. 28 shows a case where the first capacitive element and the second capacitive element in FIG. 2 are replaced with FIG. 30(J). At this time, it is assumed that the gate of the transistor of the voltage dividing element is connected to the scanning line. However, it is not limited to this. Therefore, the contents described in Embodiment 1 can also be applied to FIG.

A pixel 850 includes a first switch 851, a second switch 852, and a first liquid crystal element 851.
53, a second liquid crystal element 854, a third liquid crystal element 855, and a first transistor 856
, a second transistor 857 , and a capacitor 861 .

A first wiring 858 connects the first electrode of the first liquid crystal element 853 and the first transistor 85 .
6 through a first switch 851 . A second wiring 859 is connected to the first electrode of the second liquid crystal element 854 and one of the source and the drain of the second transistor 857 . The other of the source or the drain of the first transistor 856 and the other of the source or the drain of the second transistor 857 are connected to a first electrode of a capacitor 861, and the second electrode of the capacitor 861 is connected to the third liquid crystal. It is connected to the first electrode of element 855 . The first and second transistors are connected to a third wiring 860 .

Second electrodes of the first liquid crystal element 853, the second liquid crystal element 854, and the third liquid crystal element 855 are connected to a common electrode.

The first wiring 858 and the second wiring 859 function as signal lines. Therefore, image signals are normally supplied to the first wiring 858 and the second wiring 859 . However, it is not limited to this. A constant signal may be supplied regardless of the image. The third wiring 860 functions as a scanning line.

The first switch 851 and the second switch 852 are not particularly limited as long as they function as switches. For example, a transistor can be used. first switch 85
When transistors are used as the first and second switches 852, their polarities may be either P-channel or N-channel.

FIG. 28B shows the case of using an N-channel transistor as a switch. Figure 28
In (B), gates of the first switch 851N and the second switch 852N are connected to the third wiring 760 . The third wiring 860 functions as a scanning line.

28 may have two scanning lines as shown in FIG. 49, as in FIG.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

The first transistor 856 and the second transistor 857 may function as voltage dividing elements, and the polarities of the first transistor 856 and the second transistor 857 may be either P-channel or N-channel.

With the circuit structure shown in FIG. 28, the potential of the first electrode of the third liquid crystal element 855 can be lowered by the amount of the capacitor 861, as in FIG. 2 and the like.

Note that the structures of the first transistor 856 and the second transistor 857 are not limited to the illustrated structures. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure.

Note that the resistance values of the first transistor 856 and the second transistor 857 do not have to be constant, and the resistance values may be set to be different depending on time or pixels. In order to change the resistance value, the gate potentials of the first transistor 856 and the second transistor 857 functioning as resistors may be changed depending on time or pixels.

Note that the structures of the first transistor 856 and the second transistor 857 are not limited to the illustrated structures. For example, one or both of the first transistor 856 and the second transistor 857 may have a multi-gate structure. With the multi-gate structure, on-resistance of the first transistor 856 and the second transistor 857 can be made higher than in the case of the single-gate structure.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Although the case of using two voltage dividing elements has been described with reference to FIGS. 23 to 28, the present invention is not limited to this. By using more voltage dividing elements, it is possible to further improve the viewing angle characteristics. As an example, when a voltage dividing element is added to FIG. 25, or for FIG. 9,
FIG. 29 shows an example of a circuit configured by replacing two voltage dividing elements shown in FIG. 30(J) in series with a capacitive element.

In FIG. 29, a pixel 900 includes a first switch 901, a second switch 902, a first liquid crystal element 903, a second liquid crystal element 904, a third liquid crystal element 905, and a fourth liquid crystal element. 906 , a first transistor 907 , a second transistor 908 , and a third transistor 909 .

A first wiring 910 connects the first electrode of the first liquid crystal element 903 and the first transistor 907 .
is connected through a first switch 901 to either the source or the drain of . A second wiring 911 is connected to the first electrode of the second liquid crystal element 904 and one of the source and the drain of the third transistor 909 through the second switch 902 . The other of the source and drain of the first transistor 907 is connected to the first electrode of the third liquid crystal element 905 and the other of the source and drain of the second transistor 908 . Third transistor 90
9 is connected to the first electrode of the fourth liquid crystal element 906 and one of the source or drain of the second transistor 908 . First switch 901, second
A switch 902 and the gates of the first and second transistors are connected to a third wiring 912 .

Second electrodes of the first liquid crystal element 903, the second liquid crystal element 904, the third liquid crystal element 905, and the fourth liquid crystal element 906 are connected to a common electrode.

The first wiring 910 and the second wiring 911 function as signal lines. Therefore, image signals are normally supplied to the first wiring 910 and the second wiring 911 . However, it is not limited to this. A constant signal may be supplied regardless of the image. A third wiring 912 functions as a scanning line.

The first switch 901 and the second switch 902 are not particularly limited as long as they function as switches. For example, a transistor can be used. first switch 901
And when a transistor is used as the second switch 902, its polarity may be either P-channel type or N-channel type.

FIG. 28B shows the case of using an N-channel transistor as a switch. Figure 28
In (B), gates of the first switch 901N and the second switch 902N are connected to a third wiring 912 . A third wiring 912 functions as a scanning line.

26 may have two scanning lines as shown in FIG. 49, or may use a P-channel transistor as a switch.
The liquid crystal element may be further divided into a plurality of parts as shown in FIG.

Note that the switches are not limited to transistors. Various elements such as diodes can be used as the switches.

The first to third transistors may function as voltage dividing elements, and the polarities of the first to third transistors may be either P-channel type or N-channel type. In FIG. 28, an N-channel transistor is used.

As shown in FIG. 29, only one of the first and second transistors in FIG. 25 may have a multi-gate structure.

Note that the gates of the first to third transistors are connected to a third wiring that controls the first and second switches, but the present invention is not limited to this and will be described with reference to FIG. As described above, the gates of the first to third transistors may be connected to a wiring different from the third wiring that controls the first and second switches.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

Note that the resistance values of the first transistor 907, the second transistor 908, and the third transistor 909 do not have to be constant, and the resistance values may be set to be different depending on time or pixels. In order to change the resistance value, the gate potential of the third to fifth transistors functioning as resistors may be changed depending on time or pixels. Note that the structures of the first transistor 856 and the second transistor 857 are not limited to the illustrated structures.

As described above, by making each liquid crystal element have a different alignment state, the viewing angle can be widened.

FIG. 34 shows an example of a top view of a pixel of a liquid crystal display device to which the invention is applied. Also, FIG. 35 shows a circuit diagram of FIG. 34 and 35 use the same reference numerals for corresponding parts.

A pixel 1020 shown in FIG. 34 includes a first conductive layer (
A hatch pattern of the third wiring 1033 is shown. ) is provided thereon, a first insulating film (not shown) is provided, a semiconductor film is provided on the first insulating film, and a second conductive layer (first wiring 1 ) is provided on the semiconductor film.
031 hatch pattern. ) is provided, a second insulating film (not shown) is provided on the second conductive layer, and a third conductive layer (shown by a hatch pattern of the first liquid crystal element 1023) is provided on the second insulating film. ) is provided.

In FIG. 35, a pixel 1020 has a first transistor 1021 which is a first switch.
, a second transistor 1022 which is a second switch, a first liquid crystal element 1023,
A second liquid crystal element 1024, a third liquid crystal element 1025, a fourth liquid crystal element 1026, a first capacitor 1027, a second capacitor 1030, a third capacitor 1036, and a fourth liquid crystal element 1026
a capacitor 1036 , a third transistor 1028 , a fourth transistor 1029 , and a fifth transistor 1039 .

A first wiring 1031 is connected to a second wiring 1032 through first to fifth transistors connected in series. First to fourth transistors are provided between each of the first to fifth transistors.
is connected to the first electrode of the liquid crystal element. The first to fourth liquid crystal elements are connected to the first electrode of the capacitor whose second electrode is connected to the fourth wiring 1034 or the fifth wiring 1035 . Gates of the first to fifth transistors are connected to a third wiring 1033 .

Note that in FIG. 35, all the capacitive elements functioning as voltage dividing elements in FIG. 9B are replaced with transistors, and each of the capacitive elements is provided with a storage capacitor. In other words, Fig. 9
and FIG. 16 are combined. Therefore, the configuration similar to that of FIG. 1 can be applied to FIG. That is, the wiring functioning as the capacitor line may be shared with the common electrode as shown in FIG. A channel type may be used.

The first wiring 1031 and the second wiring 1032 function as signal lines. Therefore, the first
An image signal is normally supplied to the wiring 1031 and the second wiring 1032 . However, it is not limited to this. A constant signal may be supplied regardless of the image. third wiring 10
33 functions as a scanning line. The fourth wiring 1034 and the fifth wiring 1035 function as capacitor lines.

By providing pixels such as the top view shown in FIG. 32, each liquid crystal element can have various alignment states, and a liquid crystal display device having a wider viewing angle can be provided.

In this embodiment, various drawings have been used for description, but part or all of the content described in each drawing may be applied to part or all of the content described in another drawing. and a combination of
Or you can freely replace it. Furthermore, in the figures described so far, by combining other parts with respect to each part, more configurations are conceivable,
The description of this embodiment does not prevent this.

Similarly, part or all of the content described in each drawing of this embodiment may be applied, combined, or replaced with part or all of the content described in the drawing of another embodiment. etc. can be freely performed. Furthermore, in the drawings of this embodiment, by combining each part with another embodiment, more drawings can be constructed, and the description of this embodiment does not prevent this. .

It should be noted that, in the present embodiment, when part or all of the contents described in the other embodiments are embodied, slightly modified, partially changed, or improved, It provides an example of where it is described, where it is applied, and where it is relevant. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

(Embodiment 3)
In this embodiment, a structure and a manufacturing method of a transistor will be described.

51A to 51G are diagrams showing examples of the structure of a transistor and a manufacturing method thereof. Figure 5
1A is a diagram illustrating an example of a structure of a transistor. 51B to 51G illustrate an example of a method for manufacturing a transistor.

Note that the structure and manufacturing method of the transistor are not limited to those shown in FIGS. 51A to 51G, and various structures and manufacturing methods can be used.

First, an example of the structure of a transistor is described with reference to FIG. Fig. 51(A)
4A and 4B are cross-sectional views of transistors having a plurality of different structures; Here, in FIG. 51A, a plurality of transistors having different structures are shown side by side, but this is an expression for explaining the structure of the transistor, and the transistor is actually the transistor shown in FIG. They do not need to be juxtaposed as in A), and can be made separately as needed.

Next, the features of each layer forming the transistor will be described.

As the substrate 110111, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate containing stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PE
N), it is also possible to use a substrate made of a plastic typified by polyethersulfone (PES) or a flexible synthetic resin such as acrylic. A flexible semiconductor device can be manufactured by using a flexible substrate. As long as the substrate is flexible, there are no major restrictions on the area and shape of the substrate.
For 111, for example, if one side is 1 meter or more and a rectangular shape is used, the productivity can be significantly improved. Such an advantage is a great advantage compared with the case of using a circular silicon substrate.

The insulating film 110112 functions as a base film. It is provided to prevent alkali metals such as Na or alkaline earth metals from the substrate 110111 from adversely affecting the characteristics of the semiconductor element. As the insulating film 110112, an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y), or silicon nitride oxide (SiNxOy) (x>y). A single layer structure or a laminated structure of these layers can be provided.
For example, when the insulating film 110112 has a two-layer structure, a silicon nitride oxide film is preferably provided as the first insulating film, and a silicon oxynitride film is preferably provided as the second insulating film. As another example, when the insulating film 110112 is provided with a three-layer structure, a silicon oxynitride film is provided as the first insulating film,
A silicon nitride oxide film is preferably provided as the second insulating film, and a silicon oxynitride film is preferably provided as the third insulating film.

The semiconductor layers 110113, 110114, and 110115 can be made of an amorphous semiconductor or a semi-amorphous semiconductor (SAS). Alternatively, a polycrystalline semiconductor layer may be used. SAS is a semiconductor that has an intermediate structure between an amorphous structure and a crystalline structure (including single crystals and polycrystals), has a free energy stable third state, and has short-range order. It contains crystalline regions with lattice strain. At least some regions in the membrane have
A crystal region of 0.5 to 20 nm can be observed, and when silicon is the main component, the Raman spectrum is shifted to the lower wavenumber side than 520 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) are observed, which are believed to be derived from the silicon crystal lattice. At least 1 atomic % or more of hydrogen or halogen is contained as compensation for dangling bonds. SAS is formed by glow-discharge decomposition (plasma CVD) of a material gas. As a material gas, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHC
l ₃ , SiCl ₄ , SiF ₄ and the like can be used. Alternatively, _GeF4 may be mixed. This material gas may be diluted with H2, or _H2 and one or more rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate ranges from 2 to 1000 times. The pressure is approximately in the range of 0.1 Pa to 133 Pa, and the power frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300° C. or lower. As impurity elements in the film, the concentration of atmospheric components such as oxygen, nitrogen, and carbon is desirably 1× ^{10 20} cm ^{−1 or} less. × 10 ¹⁹ /c
m ³ or less. Here, an amorphous semiconductor layer is formed using a material (for example, SixGe1-x, etc.) containing silicon (Si) as a main component by using known means (sputtering method, LPCVD method, plasma CVD method, etc.), and the amorphous semiconductor layer is formed. The crystalline semiconductor layer is crystallized by a known crystallization method such as a laser crystallization method, a thermal crystallization method using RTA or a furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization. Let

The insulating film 110116 is made of silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (
An insulating film containing oxygen or nitrogen, such as SiOxNy) (x>y) or silicon nitride oxide (SiNxOy) (x>y), can have a single-layer structure or a stacked-layer structure.

The gate electrode 110117 can have a single-layer conductive film or a laminated structure of two-layer or three-layer conductive films. As a material for the gate electrode 110117, a known conductive film can be used. For example, simple films of elements such as tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), and silicon (Si), or nitride films of the elements (typically tantalum nitride film, tungsten nitride film, titanium nitride film), or
An alloy film (typically Mo--W alloy, Mo--Ta alloy) in which the above elements are combined, or a silicide film of the above elements (typically tungsten silicide film, titanium silicide film) can be used. Note that the above-described single film, nitride film, alloy film, silicide film, and the like may be used as a single layer, or may be used as a laminate.

The insulating film 110118 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y) by known means (sputtering method, plasma CVD method, or the like).
, an insulating film containing oxygen or nitrogen such as silicon nitride oxide (SiNxOy) (x>y), or DLC (
It can be provided in a single-layer structure of a film containing carbon such as diamond-like carbon, or in a laminated structure of these.

The insulating film 110119 is made of siloxane resin, silicon oxide (SiOx), or silicon nitride (
SiNx), silicon oxynitride (SiOxNy) (x>y), silicon oxynitride (SiNxOy)
Insulating films containing oxygen or nitrogen such as (x>y), films containing carbon such as DLC (diamond-like carbon), or films containing epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. It can be provided in a single layer or laminated structure made of an organic material. Note that the siloxane resin corresponds to a resin containing a Si—O—Si bond.
Siloxane has a skeletal structure composed of bonds of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents. It is also possible to directly provide the insulating film 110119 so as to cover the gate electrode 110117 without providing the insulating film 110118 .

The conductive film 110123 is Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, M
A single film of an element such as n, a nitride film of the element, an alloy film of a combination of the elements, a silicide film of the element, or the like can be used. For example, as alloys containing a plurality of the elements, an Al alloy containing C and Ti, an Al alloy containing Ni,
An Al alloy containing C and Ni, an Al alloy containing C and Mn, or the like can be used. For example, when a laminated structure is provided, a structure in which Al is sandwiched between Mo, Ti, or the like can be employed. By doing so, the resistance of Al to heat and chemical reaction can be improved.

Next, features of each structure will be described with reference to cross-sectional views of transistors having a plurality of different structures shown in FIG.

110101 is a single-drain transistor and can be manufactured by a simple method.
It has the advantages of low manufacturing cost and high yield. Here, the semiconductor layer 11011
3 and 110115 have different impurity concentrations, the semiconductor layer 110113 is used as a channel region, and the semiconductor layer 110115 is used as a source region and a drain region. in this way,
By controlling the amount of impurities, the resistivity of the semiconductor layer can be controlled. Semiconductor layer and conductive film 110
123 can be brought closer to an ohmic connection. As a method for separately forming semiconductor layers with different amounts of impurities, a method of doping the semiconductor layers with impurities using the gate electrode 110117 as a mask can be used.

110102 is a transistor in which the gate electrode 110117 has a taper angle of at least a certain value, and can be manufactured by a simple method, so that it has the advantage of low manufacturing cost and high yield. Here, the semiconductor layers 110113, 110114, and 110115 have different impurity concentrations.
115 is used as a source region and a drain region. By controlling the amount of impurities in this manner, the resistivity of the semiconductor layer can be controlled. The electrical connection state between the semiconductor layer and the conductive film 110123 can be brought closer to ohmic connection. Since the transistor has the LDD region, a high electric field is less likely to be applied to the inside of the transistor, and deterioration of the element due to hot carriers can be suppressed. As a method for separately forming semiconductor layers with different amounts of impurities, the gate electrode 110
A method of doping impurities into the semiconductor layer using 117 as a mask can be used. 1
In 10102, since the gate electrode 110117 has a taper angle equal to or greater than a certain value, the concentration of impurities passing through the gate electrode 110117 and doped into the semiconductor layer is given a gradient. and the LDD regions can be easily formed.

110103 is a transistor having a gate electrode 110117 composed of at least two layers, the lower gate electrode being longer than the upper gate electrode. In this specification, the shape of the upper layer gate electrode and the lower layer gate electrode is referred to as a hat shape. gate electrode 110
Since 117 has a hat shape, the LDD regions can be formed without adding a photomask. Note that the LDD region is the gate electrode 11 as shown by 110103.
0117, especially the GOLD structure (Gate Overlapped
LDD). As a method for forming the gate electrode 110117 into a hat shape, the following method may be used.

First, when patterning the gate electrode 110117, the lower layer gate electrode and the upper layer gate electrode are etched by dry etching to form a tapered shape on the side surface. . Subsequently, anisotropic etching is performed so that the inclination of the upper layer gate electrode becomes nearly vertical. As a result, a gate electrode having a hat-shaped cross section is formed. After that, twice
A semiconductor layer 1101 used as a channel region is formed by doping an impurity element.
13. Semiconductor layers 110114 used as LDD regions and semiconductor layers 110115 used as source and drain electrodes are formed.

Note that the LDD region overlapping with the gate electrode 110117 is the Lov region, and the gate electrode 11
An LDD region that does not overlap with 0117 is called a Loff region. where Lof
The f region has a high effect of suppressing the off-current value, but has a low effect of alleviating the electric field in the vicinity of the drain to prevent deterioration of the on-current value due to hot carriers. On the other hand, the Lov region relaxes the electric field in the vicinity of the drain and is effective in preventing deterioration of the on-current value, but is less effective in suppressing the off-current value. Therefore, it is preferable to manufacture a transistor having a structure corresponding to required characteristics for each of various circuits. For example, when a semiconductor device is used as a display device, a transistor having an Loff region is preferably used as a pixel transistor in order to suppress an off current value.
On the other hand, the transistor in the peripheral circuit preferably has an Lov region in order to relax the electric field in the vicinity of the drain and prevent deterioration of the on-current value.

110104 is in contact with the side surface of the gate electrode 110117 and the sidewall 110121
is a transistor having By having the sidewalls 110121, the regions overlapping with the sidewalls 110121 can be used as LDD regions.

110105 is LDD (Lof
f) a transistor formed region; By doing so, the LDD region can be reliably formed, and the off current value of the transistor can be reduced.

110106 is LDD (Lov
) region. By doing so, the LDD region can be reliably formed, the electric field in the vicinity of the drain of the transistor can be relaxed, and deterioration of the on-current value can be reduced.

Next, an example of a method for manufacturing a transistor is described with reference to FIGS.

Note that the structure and manufacturing method of the transistor are not limited to those shown in FIGS. 51A and 51B, and various structures and manufacturing methods can be used.

In this embodiment, on the surface of the substrate 110111, on the surface of the insulating film 110112, on the surface of the semiconductor layer 110113, on the surface of 110114, on the surface of 110115, the insulating film 1
10116, on the surface of the insulating film 110118, or on the surface of the insulating film 110119,
By performing oxidation or nitridation using plasma treatment, the semiconductor layer or the insulating film can be oxidized or nitrided. Thus, by oxidizing or nitriding a semiconductor layer or an insulating film using plasma treatment, the surface of the semiconductor layer or the insulating film is modified, and compared with an insulating film formed by a CVD method or a sputtering method. Since a denser insulating film can be formed, defects such as pinholes can be suppressed, and the characteristics of the semiconductor device can be improved.

First, the surface of the substrate 110111 is washed with hydrofluoric acid (HF), alkali or pure water.
As the substrate 110111, a glass substrate such as barium borosilicate glass or aluminoborosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate containing stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PE
N), it is also possible to use a substrate made of a plastic typified by polyethersulfone (PES), or a flexible synthetic resin such as acrylic. Note that here the substrate 11
A case where a glass substrate is used as 0111 is shown.

Here, an oxide film or a nitride film may be formed on the surface of the substrate 110111 by performing plasma treatment on the surface of the substrate 110111 to oxidize or nitride the surface of the substrate 110111 (FIG. 51B). . An insulating film such as an oxide film or a nitride film formed by performing plasma treatment on the surface is hereinafter also referred to as a plasma-treated insulating film. In FIG. 51(B),
The insulating film 131 is a plasma-treated insulating film. In general, when a semiconductor element such as a thin film transistor is provided on a substrate such as glass or plastic, impurity elements such as alkali metals or alkaline earth metals such as Na contained in glass or plastic are mixed into the semiconductor element. Contamination can affect the properties of semiconductor devices. However, by nitriding the surface of the substrate made of glass, plastic, or the like, it is possible to prevent impurity elements such as Na contained in the substrate, such as alkali metals or alkaline earth metals, from entering the semiconductor element.

When the surface is oxidized by plasma treatment, it should be performed in an oxygen atmosphere (for example, oxygen (O ₂
) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or an atmosphere of oxygen and hydrogen (H ₂ ) and a rare gas, or an atmosphere of dinitrogen monoxide and a rare gas )
plasma treatment. On the other hand, when the semiconductor layer is nitrided by plasma treatment, the nitrogen atmosphere (for example, nitrogen (N ₂ ) and rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, or Plasma treatment is performed in a nitrogen-hydrogen-rare gas atmosphere, or _NH3 and a rare-gas atmosphere). For example, Ar can be used as the rare gas. Alternatively, a mixed gas of Ar and Kr may be used. Therefore, the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment. For example, when Ar is used, the plasma-treated insulating film contains Ar.

Plasma treatment is carried out in an atmosphere of the above gas with an electron density of 1×10 ¹¹ cm ⁻³ or more.
×10 ¹³ cm ⁻³ or less, and the plasma electron temperature is preferably 0.5 eV or more and 1.5 eV or less. Since the electron density of the plasma is high and the electron temperature near the object to be processed is low, the object to be processed can be prevented from being damaged by the plasma. Since the electron density of plasma is as high as 1×10 ¹¹ cm ⁻³ or more, an oxide or nitride film formed by oxidizing or nitriding an object to be irradiated using plasma processing can be formed by CVD or sputtering. It is possible to form a dense film which is excellent in uniformity of film thickness and the like as compared with a film formed by a method or the like. Alternatively, since the plasma electron temperature is as low as 1 eV or less, the oxidation or nitridation treatment can be performed at a lower temperature than in the conventional plasma treatment or thermal oxidation method. For example, even if the plasma treatment is performed at a temperature 100 degrees or more lower than the strain point temperature of the glass substrate, the oxidation or nitridation treatment can be sufficiently performed. Note that a high frequency such as a microwave (2.45 GHz) can be used as a frequency for forming plasma. Unless otherwise specified, the plasma treatment is performed under the above conditions.

Note that FIG. 51B shows the case where the plasma-treated insulating film is formed by plasma-treating the surface of the substrate 110111;
The case where the plasma-treated insulating film is not formed on the surface of 1 is also included.

Although FIGS. 51C to 51G do not show a plasma-treated insulating film formed by plasma-treating the surface of the object to be processed, in this embodiment, the substrate 11
0111, insulating film 110112, semiconductor layers 110113, 110114, 110115,
The case where the insulating film 110116, the insulating film 110118, or the insulating film 110119 has a plasma-treated insulating film formed by performing plasma treatment is also included.

Next, an insulating film 110112 is formed on the substrate 110111 using known means (sputtering method, LPCVD method, plasma CVD method, etc.) (FIG. 51(C)). As the insulating film 110112, silicon oxide (SiOx) or silicon oxynitride (SiOxNy) (x>y) can be used.

Here, a plasma-treated insulating film may be formed on the surface of the insulating film 110112 by subjecting the surface of the insulating film 110112 to plasma treatment and oxidizing or nitriding the insulating film 110112 . By oxidizing the surface of the insulating film 110112, the surface of the insulating film 110112 can be modified and a dense film with few defects such as pinholes can be obtained. By oxidizing the surface of the insulating film 110112, a plasma-treated insulating film with a low N atom content can be formed. Improves properties. Note that the plasma-treated insulating film was formed using the rare gas (
including at least one of He, Ne, Ar, Kr, and Xe). Note that the plasma treatment can be similarly performed under the conditions described above.

Next, island-shaped semiconductor layers 110113 and 110114 are formed on the insulating film 110112 (
FIG. 51(D)). The island-shaped semiconductor layers 110113 and 110114 are formed on the insulating film 110112 by using known means (sputtering, LPCVD, plasma CVD, etc.).
forming an amorphous semiconductor layer using a material containing i) as a main component (eg, Si _x Ge _1-x , etc.), crystallizing the amorphous semiconductor layer, and selectively etching the semiconductor layer; can be provided by Crystallization of the amorphous semiconductor layer is performed by a laser crystallization method, a thermal crystallization method using RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or any of these methods. can be carried out by a known crystallization method such as a method combining Here, the end portions of the island-shaped semiconductor layers are provided in a shape close to a right angle (θ=85 to 100°). Alternatively, the semiconductor layer 110114 to be the low-concentration drain region is doped with impurities using a mask.
It may be formed by pinging.

Here, the surfaces of the semiconductor layers 110113 and 110114 are subjected to plasma treatment, and the semiconductor layer 1
By oxidizing or nitriding the surfaces of 10113 and 110114, the semiconductor layer 11011
3, 110114 may be coated with a plasma-treated insulating film. For example, the semiconductor layer 11
When Si is used for 0113 and 110114, silicon oxide (SiOx) or silicon nitride (SiNx) is formed as the plasma processing insulating film. Alternatively, the semiconductor layers 110113 and 110114 may be oxidized by plasma treatment and then nitrided by plasma treatment again. In this case, silicon oxide (SiOx) is formed in contact with the semiconductor layers 110113 and 110114, and silicon nitride oxide (SiNxOy) (x>
y) is formed. Note that when the semiconductor layer is oxidized by plasma treatment, it is performed under an oxygen atmosphere (for example, an atmosphere containing at least one of oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed with oxygen, hydrogen (H ₂ ), and a rare gas atmosphere, or dinitrogen monoxide and a rare gas atmosphere). On the other hand, when the semiconductor layer is nitrided by plasma treatment, nitrogen atmosphere (for example, nitrogen (N ₂ ) and rare gas (He, Ne, Ar, Kr, X
e) atmosphere, or an atmosphere of nitrogen and hydrogen and a rare gas, or NH
3 and under a rare gas atmosphere), the plasma treatment is performed. For example, Ar can be used as the rare gas. Alternatively, a mixed gas of Ar and Kr may be used. Therefore, the plasma-treated insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment. For example, when Ar is used, A
contains r.

Next, an insulating film 110116 is formed (FIG. 51(E)). The insulating film 110116 is formed by using known means (sputtering method, LPCVD method, plasma CVD method, etc.) to form silicon oxide (SiOx
), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y), silicon nitride oxide (
A single-layer structure of an insulating film containing oxygen or nitrogen such as SiNxOy (x>y), or a stacked-layer structure thereof can be provided. Note that when plasma-treated insulating films are formed on the surfaces of the semiconductor layers 110113 and 110114 by plasma-treating the surfaces of the semiconductor layers 110113 and 110114, the plasma-treated insulating films can be used as the insulating film 110116. .

Here, a plasma-treated insulating film may be formed on the surface of the insulating film 110116 by subjecting the surface of the insulating film 110116 to plasma treatment and oxidizing or nitriding the surface of the insulating film 110116 . Note that the plasma-treated insulating film is made of the rare gas (He, Ne,
including at least one of Ar, Kr, and Xe). Note that the plasma treatment can be similarly performed under the conditions described above.

Alternatively, the insulating film 110116 may be once oxidized by plasma treatment in an oxygen atmosphere and then nitrided by plasma treatment again in a nitrogen atmosphere. By subjecting the insulating film 110116 to plasma treatment and oxidizing or nitriding the surface of the insulating film 110116 in this manner, the surface of the insulating film 110116 can be modified to form a dense film. An insulating film obtained by plasma treatment is denser and has fewer defects such as pinholes than an insulating film formed by a CVD method or a sputtering method, so that the characteristics of a thin film transistor can be improved.

Next, a gate electrode 110117 is formed (FIG. 51(F)). The gate electrode 110117 can be formed using known means (sputtering method, LPCVD method, plasma CVD method, etc.).

In 110101, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as a source region and a drain region can be formed.

In 110102, by performing impurity doping after forming the gate electrode 110117, 110114 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110103, by performing impurity doping after forming the gate electrode 110117, 110114 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110104, sidewalls 110121 are formed on the sides of the gate electrode 110117.
110114 used as LDD regions by performing impurity doping.
Then, a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

The sidewall 110121 is made of silicon oxide (SiOx) or silicon nitride (SiNx).
can be used. As a method of forming the sidewalls 110121 on the side surfaces of the gate electrode 110117, for example, after forming the gate electrode 110117, silicon oxide (
SiOx) or silicon nitride (SiNx) film by a known method and then etching the silicon oxide (SiOx) or silicon nitride (SiNx) film by anisotropic etching. By doing so, silicon oxide (SiO) is formed only on the side surfaces of the gate electrode 110117.
x) or a silicon nitride (SiNx) film can be left, sidewalls 110121 can be formed on the side surfaces of the gate electrode 110117 .

In 110105, a mask 110122 is formed to cover the gate electrode 110117, and then impurity doping is performed to use it as an LDD (Loff) region 11.
0114 and a semiconductor layer 110115 used as semiconductor layer source and drain regions can be formed.

In 110106, by performing impurity doping after forming the gate electrode 110117, 110114 used as LDD (Lov) regions and semiconductor layers 110115 used as semiconductor layer source and drain regions can be formed. .

Next, an insulating film 110118 is formed (FIG. 51(G)). The insulating film 110118 is formed of silicon oxide (SiOx), silicon nitride (S
iNx), silicon oxynitride (SiOxNy) (x>y), silicon oxynitride (SiNxOy) (
A single-layer structure of an insulating film containing oxygen or nitrogen such as x>y) or a film containing carbon such as DLC (diamond-like carbon), or a laminated structure of these can be provided.

Here, a plasma-treated insulating film may be formed on the surface of the insulating film 110118 by subjecting the surface of the insulating film 110118 to plasma treatment and oxidizing or nitriding the surface of the insulating film 110118 . Note that the plasma-treated insulating film is made of the rare gas (He, Ne,
including at least one of Ar, Kr, and Xe). Note that the plasma treatment can be similarly performed under the conditions described above.

Next, an insulating film 110119 is formed. The insulating film 110119 is formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y), silicon nitride oxide (SiNxOy) ( Insulating films containing oxygen or nitrogen such as x>y) and films containing carbon such as DLC (diamond-like carbon) can be used, as well as epoxy, polyimide, polyamide, polyvinylphenol, and benzocyclobutene. , a single-layer structure of an organic material such as acrylic, or a siloxane resin, or a laminated structure of these. Note that the siloxane resin corresponds to a resin containing a Si—O—Si bond. Siloxane has a skeletal structure composed of bonds of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents. The plasma processing insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for plasma processing. Ar is contained in the film.

When an organic material such as polyimide, polyamide, polyvinylphenol, benzocyclobutene, or acrylic, or a siloxane resin is used as the insulating film 110119, the insulating film 110119
By oxidizing or nitriding the surface of the insulating film by plasma treatment, the surface of the insulating film can be modified. By modifying the surface, the strength of the insulating film 110119 is improved, and it becomes possible to reduce physical damage such as cracking during opening formation and film loss during etching. By modifying the surface of the insulating film 110119, the insulating film 110
When the conductive film 110123 is formed over 119, adhesion with the conductive film is improved. for example,
When a siloxane resin is used as the insulating film 110119 and nitridation is performed by plasma treatment, the surface of the siloxane resin is nitrided to form a plasma-treated insulating film containing nitrogen or a rare gas, which improves physical strength. .

Next, in order to form a conductive film 110123 electrically connected to the semiconductor layer 110115,
Contact holes are formed in the insulating films 110119, 110118 and 110116. As shown in FIG. The shape of the contact hole may be tapered. By doing this,
Coverage of the conductive film 110123 can be improved.

FIG. 55 shows a cross-sectional structure of a bottom-gate transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110502) is formed over the entire surface of the substrate 110501 . The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. As the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy
) or a laminate of these can be used.

A first conductive layer (a conductive layer 110503 and a conductive layer 110504) is formed over the first insulating film. Conductive layer 110503 includes a portion that functions as the gate electrode of transistor 110520 . The conductive layer 110504 includes a portion functioning as the first electrode of the capacitor 110521 . In addition, as the first conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA—Si, Zn, Fe, Ba, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

A second insulating film (insulating film 110504) is formed to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a lamination thereof can be used.

Note that it is desirable to use a silicon oxide film as the second insulating film in a portion in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A semiconductor layer is formed on part of a portion of the second insulating film that overlaps with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like. A portion of the semiconductor layer extends to a portion of the second insulating film that is not formed to overlap with the first conductive layer. The semiconductor layer has a channel formation region (channel formation region 1105
10), LDD regions (LDD region 110508, LDD region 110509) and impurity regions (impurity region 110505, impurity region 110506, impurity region 110507). A channel formation region 110510 functions as a channel formation region of the transistor 110520 . LDD regions 110508 and 110509 function as LDD regions of transistor 110520 . Note that the LDD regions 110508 and 110509 are not necessarily required. The impurity region 110505 is the transistor 11
0520 including a portion that functions as one of the source and drain electrodes. Impurity region 1
00506 includes a portion that functions as the other of the source and drain electrodes of transistor 110520 . Impurity region 110507 includes a portion functioning as a second electrode of capacitor 110521 .

A third insulating film (insulating film 110511) is formed on the entire surface. A contact hole is selectively formed in a part of the third insulating film. The insulating film 110511 functions as an interlayer film. As the third insulating film, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.) or an organic compound material with a low dielectric constant (photosensitive or non-photosensitive organic resin material) can be used. Alternatively, materials containing siloxane can be used. Note that siloxane is a material having a skeletal structure composed of a bond between silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents.

A second conductive layer (a conductive layer 110512 and a conductive layer 110513) is formed over the third insulating film. The conductive layer 110512 is connected to the other of the source and drain electrodes of the transistor 110520 through a contact hole formed in the third insulating film. Accordingly, conductive layer 110512 includes a portion that functions as the other of the source and drain electrodes of transistor 110520 . The conductive layer 110513 includes a portion functioning as the first electrode of the capacitor 110521 . As the second conductive layer, Ti, Mo, Ta
, Cr, W, Al, Nd, Cu, Ag, Au, Pt, NA—Si, Zn, Fe, Ba, G
e, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

Note that various insulating films or various conductive films may be formed in a step after the formation of the second conductive layer.

Structures of a transistor and a capacitor in the case of using an amorphous silicon (a-Si:H) film for a semiconductor layer of the transistor will be described.

FIG. 52 shows the cross-sectional structure of a top-gate transistor and the cross-sectional structure of a capacitor.

A first insulating film (insulating film 110202 ) is formed over the entire surface of the substrate 110201 . The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. As the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy
) or a laminate of these can be used.

Note that it is not always necessary to form the first insulating film. In this case, the number of steps can be reduced. It is possible to reduce manufacturing costs. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110203, a conductive layer 110204, and a conductive layer 110205) is formed over the first insulating film. The conductive layer 110203 includes a portion that functions as one of the source and drain electrodes of the transistor 110220 . conductive layer 11020
4 includes a portion that functions as the other of the source and drain electrodes of transistor 110220 . The conductive layer 110205 includes a portion functioning as the first electrode of the capacitor 110221 . In addition, as the first conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA—Si, Zn, Fe, Ba, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

A first semiconductor layer (semiconductor layer 110
206 and a semiconductor layer 110207) are formed. The semiconductor layer 110206 includes a portion functioning as one of a source electrode and a drain electrode. The semiconductor layer 110207 is
It includes a portion that functions as the other of the source electrode and the drain electrode. Silicon or the like containing phosphorus or the like can be used as the first semiconductor layer.

A second insulating film is formed between the conductive layer 110203 and the conductive layer 110204 and on the first insulating film.
A semiconductor layer (semiconductor layer 110208) is formed. And the semiconductor layer 110208
extends over the conductive layers 110203 and 110204 . Semiconductor layer 110208 includes a portion that functions as a channel region of transistor 110220 . As the second semiconductor layer, an amorphous semiconductor layer such as amorphous silicon (a-Si:H), a semiconductor layer such as microcrystalline semiconductor (μ-Si:H), or the like can be used. .

A second insulating film (
An insulating film 110209 and an insulating film 110210) are formed. The second insulating film is the gate
It has a function as an insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a lamination thereof can be used.

Note that it is desirable to use a silicon oxide film as the second insulating film in contact with the second semiconductor layer. This is because the trap level at the interface between the second semiconductor layer and the second insulating film is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A second conductive layer (a conductive layer 110211 and a conductive layer 110212) is formed over the second insulating film. Conductive layer 110211 includes a portion that functions as the gate electrode of transistor 110220 . The conductive layer 110212 functions as a second electrode of the capacitor 110221 or a wiring. As the second conductive layer, Ti, Mo, Ta, Cr, W, A
l, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

Note that various insulating films or various conductive films may be formed in a step after the formation of the second conductive layer.

FIG. 53 shows the cross-sectional structure of an inverted staggered (bottom gate) transistor and the cross-sectional structure of a capacitor. In particular, the transistor shown in FIG. 53 has a structure called a channel-etch type.

A first insulating film (insulating film 110302) is formed over the entire surface of the substrate 110301 . The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. As the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy
) or a laminate of these can be used.

Note that it is not always necessary to form the first insulating film. In this case, the number of steps can be reduced. It is possible to reduce manufacturing costs. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110303 and a conductive layer 110304) is formed over the first insulating film. Conductive layer 110303 includes a portion that functions as the gate electrode of transistor 110320 . The conductive layer 110304 includes a portion functioning as the first electrode of the capacitor 110321 . In addition, as the first conductive layer, Ti, Mo, TB, Cr, W, Bl, N
d, Cu, Bg, Bu, Pt, NA—Si, Zn, Fe, BB, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

A second insulating film (insulating film 110302) is formed to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a lamination thereof can be used.

Note that it is desirable to use a silicon oxide film as the second insulating film in a portion in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A first semiconductor layer (semiconductor layer 11) is formed on a portion of the second insulating film overlapping with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0306) are formed. A portion of the semiconductor layer 110308 extends to a portion of the second insulating film which is not formed to overlap with the first conductive layer. semiconductor layer 11
0306 includes a portion that functions as the channel region of transistor 110320 . Note that as the semiconductor layer 110306, an amorphous semiconductor layer such as amorphous silicon (A-Si:H), a semiconductor layer such as a microcrystalline semiconductor (μ-Si:H), or the like can be used.

A second semiconductor layer (a semiconductor layer 110307 and a semiconductor layer 110) is partially formed on the first semiconductor layer.
307) are formed. The semiconductor layer 110307 includes a portion functioning as one of a source electrode and a drain electrode. The semiconductor layer 110308 includes a portion functioning as the other of the source electrode and the drain electrode. Silicon containing phosphorus or the like can be used as the second conductor layer.

A second conductive layer (a conductive layer 110309, a conductive layer 1
10310 and a conductive layer 110311) are formed. Conductive layer 110309 includes portions that function as one of the source and drain electrodes of transistor 110320 . Conductive layer 110310 includes portions that function as the other of the source and drain electrodes of transistor 110320 . The conductive layer 110312 includes a portion functioning as the second electrode of the capacitor 110321 . As the second conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA—Si, Zn, Fe, Ba, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

Note that various insulating films or various conductive films may be formed in a step after the formation of the second conductive layer.

Here, an example of a process characterized by a channel-etched transistor is described. The same mask can be used to form the first semiconductor layer and the second semiconductor layer. in particular,
The first semiconductor layer and the second semiconductor layer are deposited continuously. Then, the first semiconductor layer and the second semiconductor layer are formed using the same mask.

Another example of a process characterized by a channel-etched transistor will be described. A channel region of a transistor can be formed without using a new mask. in particular,
After the second conductive layer is formed, portions of the second semiconductor layer are removed using the second conductive layer as a mask. Alternatively, part of the second semiconductor layer is removed using the same mask as the second conductive layer. The first semiconductor layer formed under the removed second semiconductor layer becomes the channel region of the transistor.

FIG. 54 shows the cross-sectional structure of an inverted staggered (bottom gate) transistor and the cross-sectional structure of a capacitor. In particular, the transistor shown in FIG. 54 has a structure called a channel protection type (channel stop type).

A first insulating film (insulating film 110402) is formed over the entire surface of the substrate 110401 . The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the properties of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. As the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy
) or a laminate of these can be used.

Note that it is not always necessary to form the first insulating film. In this case, the number of steps can be reduced. It is possible to reduce manufacturing costs. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110403 and a conductive layer 110404) is formed over the first insulating film. Conductive layer 110403 includes a portion that functions as the gate electrode of transistor 110420 . The conductive layer 110404 includes a portion functioning as the first electrode of the capacitor 110421 . Note that the first conductive layer includes Ti, Mo, TC, Cr, W, Cl, N,
d, Cu, Cg, Cu, Pt, NC, Si, Zn, Fe, CC, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

A second insulating film (insulating film 110402) is formed to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a lamination thereof can be used.

Note that it is desirable to use a silicon oxide film as the second insulating film in a portion in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

When the second insulating film is in contact with Mo, it is desirable to use a silicon oxide film as the second insulating film in the portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A first semiconductor layer (semiconductor layer 11) is formed on a portion of the second insulating film overlapping with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0406) are formed. A portion of the semiconductor layer 110408 extends to a portion of the second insulating film which is not formed to overlap with the first conductive layer. semiconductor layer 11
0406 includes a portion that functions as the channel region of transistor 110420 . Note that as the semiconductor layer 110406, an amorphous semiconductor layer such as amorphous silicon (C—Si:H), a semiconductor layer such as a microcrystalline semiconductor (μ-Si:H), or the like can be used.

A third insulating film (insulating film 110412) is formed on part of the first semiconductor layer. The insulating film 110412 has a function of preventing the channel region of the transistor 110420 from being removed by etching. That is, the insulating film 110412 functions as a channel protection film (channel stop film). Note that as the third insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a lamination thereof can be used.

A second semiconductor layer (semiconductor layer 110
407 and a semiconductor layer 110408) are formed. The semiconductor layer 110407 includes a portion functioning as one of a source electrode and a drain electrode. The semiconductor layer 110408 is
It includes a portion that functions as the other of the source electrode and the drain electrode. Silicon containing phosphorus or the like can be used as the second conductor layer.

A second conductive layer (a conductive layer 110409, a conductive layer 110410, and a conductive layer 110411) is formed over the second semiconductor layer. Conductive layer 110409 connects transistor 110420
and a portion that functions as one of the source and drain electrodes of the . The conductive layer 110410 is
It includes the portion that functions as the other of the source and drain electrodes of transistor 110420. The conductive layer 110412 includes a portion functioning as the second electrode of the capacitor 110421 . Note that the second conductive layer includes Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, A
u, Pt, NC, Si, Zn, Fe, Ca, Ge, etc., or alloys thereof can be used. Alternatively, lamination of these elements (including alloys) can be used.

Note that various insulating films or various conductive films may be formed in a step after the formation of the second conductive layer.

Here, an example of a process characterized by a channel-protective transistor is described. The same mask can be used to form the first semiconductor layer, the second semiconductor layer, and the second conductive layer.
At the same time, a channel region can be formed. Specifically, a first semiconductor layer is formed,
Next, a third insulating film (channel protection film, channel stop film) is formed using a mask, and then a second semiconductor layer and a second conductive layer are successively formed. Then, after the second conductive layer is deposited, the first semiconductor layer, the second semiconductor layer and the second conductive layer are formed using the same mask. However, since the first semiconductor layer under the third insulating film is protected by the third insulating film, it is not removed by etching. This part (the third semiconductor layer on the upper part of the first semiconductor layer)
(where the insulating film is formed) becomes the channel region.

Next, an example using a semiconductor substrate as a substrate for manufacturing a transistor will be described. Since a transistor manufactured using a semiconductor substrate has high mobility, the size of the transistor can be reduced. As a result, it is possible to increase the number of transistors per unit area (increase the degree of integration), and with the same circuit configuration, the higher the degree of integration, the smaller the substrate size, so that the manufacturing cost can be reduced. Furthermore, with the same substrate size, the higher the degree of integration, the larger the circuit scale. Therefore, it is possible to provide higher functions while keeping the manufacturing cost almost the same. In addition, due to the small variation in characteristics,
Manufacturing yield can also be increased. Furthermore, since the operating voltage is low, power consumption can be reduced. Furthermore, high-speed operation is possible due to high mobility.

A circuit configured by integrating transistors manufactured using a semiconductor substrate is mounted in a device in the form of an IC chip or the like, so that the device can have various functions. For example, peripheral drive circuits (data driver (source driver), scan driver (gate driver), timing controller, image processing circuit, interface circuit, power supply circuit, oscillation circuit, etc.) of a display device are manufactured using a semiconductor substrate. By integrating transistors, a peripheral driver circuit that is small in size, consumes little power, and can operate at high speed can be manufactured at low cost and with high yield. Note that a circuit configured by integrating transistors manufactured using a semiconductor substrate may have a configuration including transistors of a single polarity. By doing so, the manufacturing process can be simplified, and the manufacturing cost can be reduced.

Circuits configured by integrating transistors manufactured using a semiconductor substrate are also
For example, it can be used for display panels. More specifically, LCOS (Liquid
Crystal On Silicon) and other reflective liquid crystal panels, DMD (Digital Micromirror Device) elements in which micromirrors are integrated, EL panels, and the like. By manufacturing these display panels using a semiconductor substrate, display panels that are small in size, consume little power, and are capable of high-speed operation can be manufactured at low cost and with high yield. Note that the display panel also includes those formed on elements having functions other than driving the display panel, such as large-scale integrated circuits (LSIs).

A method of manufacturing a transistor using a semiconductor substrate will be described below.

First, regions 110604 and 110606 (hereinafter also referred to as regions 110604 and 110606) in which elements are separated are formed in a semiconductor substrate 110600 (see FIG. 56A). Regions 110604 and 110606 provided on the semiconductor substrate 110600 are formed by the insulating film 1, respectively.
10602 (also called field oxide). Here, a single-crystal Si substrate having n-type conductivity is used as the semiconductor substrate 110600, and the semiconductor substrate 1106
An example in which a p-well 110607 is provided in a region 110606 of 00 is shown.

The substrate 110600 is not particularly limited as long as it is a semiconductor substrate and can be used. For example, single crystal Si substrates having n-type or p-type conductivity, compound semiconductor substrates (GaAs substrates, I
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by Implanted Oxygen)
An SOI (Silicon on Insulator) substrate or the like manufactured using a method can be used.

The element isolation regions 110604 and 110606 are formed by a selective oxidation method (LOCOS (Local
Oxidation of Silicon) method, trench isolation method, or the like can be used as appropriate.

A p-well formed in region 110606 of semiconductor substrate 110600 is connected to semiconductor substrate 11
0600 can be formed by selectively introducing an impurity element having p-type conductivity. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing p-type.

Note that in this embodiment, since a semiconductor substrate having n-type conductivity is used as the semiconductor substrate 110600, an impurity element is not introduced into the region 110604, but an impurity element exhibiting n-type conductivity may be introduced. may form an n-well in region 110604. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element. on the other hand,
When a semiconductor substrate having p-type conductivity is used, an n-type impurity element may be introduced into the region 110604 to form an n-well, and the region 110606 may not be introduced with an impurity element.

Next, insulating films 110632 and 11063 are formed so as to cover the regions 110604 and 110606.
4 are formed (see FIG. 56(B)).

The insulating films 110632 and 110634 are formed by, for example, heat treatment to form the semiconductor substrate 110600.
Insulating films 110632 and 110634 can be formed from silicon oxide films by oxidizing the surfaces of regions 110604 and 110606 provided in the region. After forming a silicon oxide film by a thermal oxidation method, the surface of the silicon oxide film is nitrided by performing nitriding treatment, thereby forming a laminated structure of the silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film). may be formed.

Alternatively, the insulating films 110632 and 110634 may be formed using plasma treatment as described above. For example, regions 110604 and 11 provided in semiconductor substrate 110600
By performing oxidation treatment or nitridation treatment on the surface of 0606 by high-density plasma treatment, silicon oxide (SiOx) films or silicon nitride (SiNx) films are formed as the insulating films 110632 and 110634.
) membrane. As another example, a high-density plasma treatment can be applied to region 110604
, 110606 may be subjected to nitriding treatment by applying high-density plasma treatment again after the oxidation treatment. In this case, a silicon oxide film is formed in contact with the surfaces of the regions 110604 and 110606, a (silicon oxynitride film) is formed on the silicon oxide film, and the insulating film 110 is formed.
632 and 110634 are films in which a silicon oxide film and a silicon oxynitride film are laminated. As another example, a silicon oxide film may be formed on the surfaces of regions 110604 and 110606 by thermal oxidation, and then oxidation or nitridation may be performed by high-density plasma treatment.

Insulating film 1106 formed in regions 110604 and 110606 of semiconductor substrate 110600
32, 110634 functions as a gate insulating film in a later completed transistor.

Next, insulating films 110632 and 11063 formed in regions 110604 and 110606
A conductive film is formed to cover 4 (see FIG. 56(C)). Here, an example in which a conductive film 110636 and a conductive film 110638 are stacked in this order is shown as the conductive film. Of course, the conductive film may be formed with a single layer or a laminated structure of three or more layers.

As the conductive films 110636 and 110638, tantalum (Ta) and tungsten (W) are used.
, titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (
Cr), niobium (Nb), etc., or an alloy material or compound material containing these elements as main components. Alternatively, it can be formed of a metal nitride film obtained by nitriding these elements. In addition, it can also be formed of a semiconductor material represented by polycrystalline silicon doped with an impurity element such as phosphorus, or silicide into which a metal material is introduced.

Here, tantalum nitride is used as the conductive film 110636, and the conductive film 11063 is used.
8 is a laminated structure using tungsten. Besides, as the conductive film 110636,
A single layer or laminated film selected from tungsten nitride, molybdenum nitride, or titanium nitride can be used. As the conductive film 110638, a single layer or a laminated film selected from tantalum, molybdenum, and titanium can be used.

Next, by selectively etching and removing the conductive films 110636 and 110638 which are stacked, the conductive films 110636 are partially formed in the regions 110604 and 110606 .
, 110638 are left, and gate electrodes 110640 and 110642 are formed (see FIG. 57A).

Next, a resist mask 110648 is selectively formed to cover the region 110604,
Using the resist mask 110648 and the gate electrode 110642 as masks, the region 1106 is formed.
06, an impurity region 110652 is formed (FIG. 57 (
B)). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing p-type. Here, phosphorus (P) is used as the impurity element. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

In FIG. 57B, an impurity region 110652 forming a source or drain region in region 110606 and a channel forming region 11065 are formed by introducing an impurity element.
0 is formed.

Next, a resist mask 110666 is selectively formed to cover the region 110606,
Using the resist mask 110666 and the gate electrode 110640 as a mask, the region 1106 is formed.
04, an impurity region 110670 is formed (FIG. 57 (
C)). As the impurity element, an impurity element imparting n-type conductivity or an impurity element imparting p-type conductivity is used. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing p-type. Here, an impurity element (for example, boron (B)) having a conductivity type different from that of the impurity element introduced into the region 110606 in FIG. 57C is introduced. As a result, impurity region 11 forming a source or drain region in region 110604
0670 and a channel forming region 110668 are formed. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, a second insulating film 110672 is formed to cover insulating films 110632 and 110634 and gate electrodes 110640 and 110642 . In addition, areas 110604, 1106
Wirings 110674 are formed to electrically connect to the impurity regions 110652 and 110670 respectively formed in 06 (see FIG. 57D).

The second insulating film 110672 is formed of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y), silicon oxynitride (S
Insulating films containing oxygen or nitrogen such as iNxOy) (x>y), films containing carbon such as DLC (diamond-like carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or siloxane It can be provided in a single layer or laminated structure made of a siloxane material such as a resin. The siloxane material is S
It corresponds to a material containing i—O—Si bonds. Siloxane is silicon (Si) and oxygen (O)
A skeletal structure is formed by binding with As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents.

The wiring 110674 is made of aluminum (Al),
tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn),
An element selected from neodymium (Nd), carbon (C), and silicon (Si), or an alloy material or compound material containing these elements as main components, is formed in a single layer or a laminated layer. The alloy material containing aluminum as the main component corresponds to, for example, a material containing aluminum as the main component and nickel, or an alloy material containing aluminum as the main component and nickel and one or both of carbon and silicon. The wiring 110674 is formed by, for example, a barrier film and aluminum silicon (
Laminated structure of barrier film and barrier film, barrier film and aluminum silicon (Al-Si)
A laminated structure of a film, a titanium nitride (TiN) film, and a barrier film may be employed. Note that the barrier film corresponds to a thin film made of titanium, titanium nitride, molybdenum, or molybdenum nitride. Since aluminum and aluminum silicon have a low resistance value and are inexpensive, the wiring 11
It is most suitable as a material for forming 0674. For example, if upper and lower barrier layers are provided,
It is possible to prevent the occurrence of hillocks of aluminum or aluminum silicon. For example, if a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, this natural oxide film is reduced. As a result, wiring 1106
74 can be well connected electrically and physically with the crystalline semiconductor film.

Note that the structure of the transistor is not limited to the illustrated structure. For example, the structure of the transistor can be an inverted staggered structure, a FinFET structure, or the like. The FinFET structure is preferable because it can suppress the short-channel effect that accompanies miniaturization of the transistor size.

Next, another example using a semiconductor substrate as a substrate for manufacturing transistors will be described.

First, an insulating film is formed on the substrate 110800 . Here, single-crystal Si having n-type conductivity is used as the substrate 110800, and an insulating film 110802 and an insulating film 110804 are formed on the substrate 110800 (see FIG. 58A). For example, silicon oxide (SiOx) is formed as the insulating film 110802 by subjecting the substrate 110800 to heat treatment. Furthermore, C
A film of silicon nitride (SiNx) is formed using the VD method or the like.

The substrate 110800 is not particularly limited and can be used as long as it is a semiconductor substrate. For example, single crystal Si substrates having n-type or p-type conductivity, compound semiconductor substrates (GaAs substrates, I
nP substrate, GaN substrate, SiC substrate, sapphire substrate, ZnSe substrate, etc.), bonding method or SIMOX (Separation by IMplanted OXygen)
An SOI (Silicon on Insulator) substrate or the like manufactured using a method can be used.

The insulating film 110804 may be provided by nitriding the insulating film 110802 by high-density plasma treatment after forming the insulating film 110802 . In addition, the insulating film is a single layer or three layers.
A laminated structure of more than one layer may be used.

Next, a pattern of a resist mask 110806 is selectively formed, and etching is selectively performed using the resist mask 110806 as a mask to obtain the substrate 110800.
A recess 110808 is selectively formed in (see FIG. 58(B)). The substrate 110800 and the insulating films 110802 and 110804 can be etched by dry etching using plasma.

Next, after removing the pattern of the resist mask 110806, an insulating film 110810 is formed to fill the concave portion 110808 formed in the substrate 110800 (FIG. 58(C)).
reference).

The insulating film 110810 is formed by using a CVD method, a sputtering method, or the like to form silicon oxide, silicon nitride, silicon oxynitride (SiOxNy) (x>y>0), silicon nitride oxide (Si
It is formed using an insulating material such as NxOy (x>y>0). Here, the insulating film 11081
0, a silicon oxide film is formed using TEOS (tetraethylorthosilicate) gas by normal pressure CVD or low pressure CVD.

Next, grinding treatment, polishing treatment or CMP (Chemical Mechanical P
polishing) to expose the surface of the substrate 110800 . Then, the surface of substrate 110800 is divided by insulating film 110810 formed in recess 110808 of substrate 110800 . (See FIG. 59A) Here, the divided regions are defined as regions 110812 and 110813, respectively. Note that the insulating film 110811 is obtained by removing part of the insulating film 110810 by grinding treatment, polishing treatment, or CMP treatment.

Subsequently, by selectively introducing an impurity element having p-type conductivity, the substrate 11 is
A p-well 110815 is formed in region 110813 of 0800; Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element showing p-type. Here, boron (B) is introduced into the region 110813 as an impurity element. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Note that when a semiconductor substrate having n-type conductivity is used as the substrate 110800, region 1
An impurity element may not be introduced into the region 10812, but an n-well may be formed in the region 110812 by introducing an impurity element exhibiting n-type. Phosphorus (P), arsenic (As), or the like can be used as the n-type impurity element.

On the other hand, when a semiconductor substrate having p-type conductivity is used, an n-type impurity element is introduced into the region 110812 to form an n-well, and no impurity element is introduced into the regions 110812 and 110813. may be

Next, an insulating film 11083 is formed on the surfaces of the regions 110812 and 110813 of the substrate 110800 .
2 and 110834 (see FIG. 59B).

The insulating films 110832 and 110834 can be formed of a silicon oxide film by performing heat treatment to oxidize the surfaces of the regions 110812 and 110813 provided on the substrate 110800, for example. Alternatively, after a silicon oxide film is formed by a thermal oxidation method, the surface of the silicon oxide film is nitrided by performing nitriding treatment, thereby stacking a silicon oxide film and a film containing oxygen and nitrogen (silicon oxynitride film). You may form with a structure.

Alternatively, the insulating films 110832 and 110834 may be formed using plasma treatment as described above. For example, regions 110812 and 11081 provided on substrate 110800
3, the surface of the insulating film 1 is oxidized or nitrided by high-density plasma treatment.
10832 and 110834 can be formed of a silicon oxide (SiOx) film or a silicon nitride (SiNx) film. As another example, a high density plasma treatment may
After performing oxidation treatment on the surface of 10813, nitriding treatment may be performed by performing high-density plasma treatment again. In this case, a silicon oxide film is formed in contact with the surfaces of regions 110812 and 110813 , a (silicon oxynitride film) is formed over the silicon oxide film, and an insulating film 1108 is formed.
32, 110834 is a film in which a silicon oxide film and a silicon oxynitride film are laminated. As another example, a silicon oxide film may be formed on the surfaces of the regions 110812 and 110813 by thermal oxidation, and then oxidation or nitridation may be performed by high-density plasma treatment.

Note that the insulating film 110 formed in the regions 110812 and 110813 of the substrate 110800
832, 110834 function as a gate insulating film in a later completed transistor.

Next, a conductive film is formed so as to cover the insulating films 110832 and 110834 formed in the regions 110812 and 110813 provided over the substrate 110800 (see FIG. 59C).
Here, an example in which a conductive film 110836 and a conductive film 110838 are stacked in this order is shown as the conductive film. Of course, the conductive film may be formed with a single layer or a laminated structure of three or more layers.

As the conductive films 110836 and 110838, tantalum (Ta) and tungsten (W) are used.
, titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (
Cr), niobium (Nb), etc., or an alloy material or compound material containing these elements as main components. Alternatively, it can be formed of a metal nitride film obtained by nitriding these elements. In addition, it can also be formed of a semiconductor material represented by polycrystalline silicon doped with an impurity element such as phosphorus, or silicide into which a metal material is introduced.

Here, the conductive film 110836 is made of tantalum nitride, and the conductive film 110838 is made of tantalum nitride.
A laminated structure using tungsten as the Alternatively, as the conductive film 110836, a single layer or a laminated film selected from tantalum nitride, tungsten nitride, molybdenum nitride, and titanium nitride can be used. As the conductive film 110838, a single layer or a laminated film selected from tungsten, tantalum, molybdenum, and titanium can be used.

Next, by selectively etching and removing the conductive films 110836 and 110838 which are stacked, the conductive films 110836 and 110838 are left in part of the regions 110812 and 110813 of the substrate 110800, and are used as gate electrodes. Functional conductive films 110840 and 110842 are formed (see FIG. 59D). Here, the conductive film 11
The surface of the substrate 110800 is exposed in regions that do not overlap with 0840 and 110842 .

Specifically, in the region 110812 of the substrate 110800, a portion of the insulating film 110832 that does not overlap with the conductive film 110840 is selectively removed, and the conductive film 110840 and the insulating film 110832 are formed such that their ends are substantially aligned. Furthermore, region 1 of substrate 110800
At 10813, a portion of the insulating film 110834 that does not overlap with the conductive film 110842 is selectively removed, and the conductive film 110842 and the insulating film 110834 are formed so that their ends are substantially aligned.

In this case, a portion of the insulating film or the like that does not overlap with the conductive films 110840 and 110842 may be removed at the same time as the conductive films 110840 and 110842 are formed, or a resist mask remaining after the formation of the conductive films 110840 and 110842 or the conductive films 110840 and 110842 may be used as masks. The insulating film or the like may be removed from the portion where it is not necessary.

Next, impurity elements are selectively introduced into regions 110812 and 110813 of the substrate 110800 (see FIG. 60A). Here, a low-concentration impurity element imparting n-type conductivity is selectively introduced into the region 110813 using the conductive film 110842 as a mask, and a low-concentration impurity element imparting p-type conductivity is selected into the region 110812 using the conductive film 110840 as a mask. systematically.
Phosphorus (P), arsenic (As), or the like can be used as an impurity element that imparts n-type conductivity. Boron (B), aluminum (Al), gallium (Ga), or the like can be used as the impurity element imparting p-type conductivity. After introducing the impurity element, heat treatment may be performed to diffuse the impurity element and repair the crystal structure.

Next, sidewalls 110854 in contact with the side surfaces of the conductive films 110840 and 110842 are formed.
to form Specifically, a film containing an inorganic material such as silicon, an oxide of silicon, or a nitride of silicon, or a film containing an organic material such as an organic resin is formed in a single layer or stacked by a plasma CVD method, a sputtering method, or the like. Form. Then, the insulating film can be selectively etched by anisotropic etching mainly in the vertical direction so as to be in contact with side surfaces of the conductive films 110840 and 110842 . Note that the sidewall 110854 is LDD (Light
It is used as a doping mask when forming a ly Doped drain) region. Here, the sidewalls 110854 are formed so as to be in contact with the side surfaces of the insulating films and floating gate electrodes formed below the conductive films 110840 and 110842 as well.

Subsequently, by introducing an impurity element into the regions 110812 and 110813 of the substrate 110800 using the sidewalls 110854 and the conductive films 110840 and 110842 as masks, impurity regions functioning as source or drain regions are formed (FIG. 60B).
)reference). Here, sidewalls 11085 are formed on region 110813 of substrate 110800 .
4 and the conductive film 110842 as a mask, an impurity element imparting high concentration of n-type is introduced, and an impurity element imparting high concentration of p-type is introduced into the region 110812 using the sidewall 110854 and the conductive film 110840 as a mask.

As a result, in the region 110812 of the substrate 110800, an impurity region 110858 forming a source or drain region, a low concentration impurity region 110860 forming an LDD region, and a channel forming region 110856 are formed. and region 110 of substrate 110800
In 813, an impurity region 110864 forming a source or drain region, a low concentration impurity region 110866 forming an LDD region, and a channel forming region 110862 are formed.

Although an example in which the LDD regions are formed using sidewalls is shown here, the present invention is not limited to this. The LDD regions may be formed using a mask or the like without using sidewalls, or the LDD regions may not be formed. Since the manufacturing process can be simplified when the LDD region is not formed, the manufacturing cost can be reduced.

Note that here, the substrate 1 is
The impurity element is introduced while the surface of 10800 is exposed. Therefore, substrate 11
Channel forming regions 11 respectively formed in 0800 regions 110812 and 110813
0856 and 110862 can be formed by conductive films 110840 and 110842 in a self-aligned manner.

Next, a second insulating film 110877 is formed so as to cover insulating films and conductive films provided in regions 110812 and 110813 of the substrate 110800, and openings 110878 are formed in the insulating film 110877 (FIG. 60C). )reference).

The second insulating film 110877 is formed of silicon oxide (SiOx) by a CVD method, a sputtering method, or the like.
, silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x>y), silicon oxynitride (S
Insulating films containing oxygen or nitrogen such as iNxOy) (x>y), films containing carbon such as DLC (diamond-like carbon), organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or siloxane It can be provided in a single layer or laminated structure made of a siloxane material such as a resin. The siloxane material is S
It corresponds to a material containing i—O—Si bonds. Siloxane is silicon (Si) and oxygen (O)
A skeletal structure is formed by binding with As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents.

Next, a conductive film 110880 is formed in the opening 110878 by a CVD method, and a conductive film 110882a is formed over the insulating film 110877 so as to be electrically connected to the conductive film 110880.
110882d are selectively formed (see FIG. 60(D)).

The conductive films 110880, 110882a to 110882d are made of aluminum (Al), tungsten (W), titanium (Ti), tantalum (
Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au
), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si
), or an alloy material or compound material containing these elements as main components, and formed in a single layer or a laminate. The alloy material containing aluminum as the main component corresponds to, for example, a material containing aluminum as the main component and nickel, or an alloy material containing aluminum as the main component and nickel and one or both of carbon and silicon. Conductive films 110880, 110
882a to 110882d are, for example, barrier films and aluminum silicon (Al—Si)
A laminated structure of a film and a barrier film, or a laminated structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride (TiN) film, and a barrier film may be employed. Note that the barrier film includes titanium,
It corresponds to a thin film made of titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon have a low resistance value and are inexpensive; For example, if upper and lower barrier layers are provided, the occurrence of hillocks of aluminum or aluminum silicon can be prevented. For example, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced and the crystalline semiconductor film and the crystalline semiconductor film are in good condition. can be contacted. Here, the conductive film 110880 is made of tungsten (W) by the CVD method.
) can be formed by selective growth.

Through the above steps, a p-type transistor formed in the region 110812 of the substrate 110800 and an n-type transistor formed in the region 110813 can be obtained.

It should be noted that the structure of the transistor constituting the transistor of the present invention is not limited to the illustrated structure. For example, the structure of the transistor can be an inverted staggered structure, a FinFET structure, or the like. The FinFET structure is preferable because it can suppress the short-channel effect that accompanies miniaturization of the transistor size.

So far, the structure of the transistor and the method for manufacturing the transistor have been described. here,
Wiring, electrodes, conductive layers, conductive films, terminals, vias, plugs, etc. are made of aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium ( Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag)
, copper (Cu), magnesium (Mg), scandium (Sc), cobalt (C
o), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn
), one or more elements selected from the group consisting of oxygen (O), or compounds, alloy materials (e.g., indium tin oxide oxide (ITO), indium zinc oxide (IZO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide (SnO), cadmium tin oxide (CTO
), aluminum neodymium (Al—Nd), magnesium silver (Mg—Ag), molybdenum niobium (Mo—Nb), etc.). Alternatively, wirings, electrodes, conductive layers, conductive films, terminals, and the like are preferably formed using a material obtained by combining these compounds. Alternatively, a compound (silicide) of one or more elements selected from the above group and silicon (for example, aluminum silicon, molybdenum silicon, nickel silicide, etc.)
, a compound of one or more elements selected from the above group and nitrogen (eg, titanium nitride, tantalum nitride, molybdenum nitride, etc.).

Note that silicon (Si) may contain n-type impurities (such as phosphorus) or p-type impurities (such as boron). Impurities in silicon improve its conductivity and allow it to behave like a normal conductor. Therefore, it becomes easy to use as a wiring, an electrode, and the like.

As silicon, silicon having various crystallinities such as single crystal, polycrystal (polysilicon), and microcrystal (microcrystal silicon) can be used. Alternatively, non-crystalline silicon such as amorphous silicon can be used as the silicon. Wiring, electrodes, conductive layers,
The resistance of the conductive film, terminals, etc. can be reduced. By using amorphous silicon or microcrystalline silicon, wiring or the like can be formed through a simple process.

Note that aluminum or silver has high conductivity, so that signal delay can be reduced. Furthermore, since it is easy to etch, patterning is easy and fine processing can be performed.

Note that since copper has high conductivity, signal delay can be reduced. When copper is used, it is desirable to have a laminated structure in order to improve adhesion.

Note that molybdenum or titanium is desirable because it does not cause defects even when in contact with an oxide semiconductor (ITO, IZO, or the like) or silicon, is easy to etch, and has high heat resistance.

Tungsten is desirable because it has advantages such as high heat resistance.

Neodymium is desirable because it has advantages such as high heat resistance. In particular, the use of an alloy of neodymium and aluminum improves the heat resistance and prevents aluminum from forming hillocks.

Note that silicon is desirable because it can be formed at the same time as a semiconductor layer included in a transistor and has high heat resistance.

Note that ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (S
nO) and cadmium tin oxide (CTO) have translucency and can be used for a portion through which light is transmitted. For example, it can be used as a pixel electrode or a common electrode.

Note that IZO is desirable because it is easily etched and processed. When IZO is etched, it is less likely that a residue will remain. Therefore, if IZO is used as the pixel electrode, it is possible to reduce the occurrence of defects (short circuit, alignment disorder, etc.) in the liquid crystal element and the light emitting element.

Wirings, electrodes, conductive layers, conductive films, terminals, vias, plugs, and the like may have a single-layer structure,
It may have a multilayer structure. By using a single-layer structure, the manufacturing steps of wirings, electrodes, conductive layers, conductive films, terminals, etc. can be simplified, the number of process days can be reduced, and the cost can be reduced. Alternatively, by forming a multi-layer structure, it is possible to reduce the demerits of each material while taking advantage of the merits of each material, thereby forming wirings, electrodes, and the like with good performance.
For example, by including a low-resistance material (aluminum, etc.) in the multilayer structure, it is possible to reduce the resistance of the wiring. As another example, by forming a laminated structure in which a low heat-resistant material is sandwiched between high heat-resistant materials, it is possible to increase the heat resistance of wiring, electrodes, etc. while taking advantage of the merits of the low heat-resistant material. I can. For example, it is desirable to have a stacked structure in which a layer containing aluminum is sandwiched between layers containing molybdenum, titanium, neodymium, or the like.

Here, when wires, electrodes, etc. are in direct contact with each other, they may adversely affect each other. For example, one wiring, electrode, etc., enters the other wiring, electrode, etc., into the material of the other, changing its properties and making it impossible to achieve its original purpose. As another example, when forming or manufacturing high resistance portions, problems may arise that prevent successful manufacturing. In such a case, it is preferable to sandwich or cover a material that reacts readily with a layered structure with a material that does not react easily. For example, when connecting ITO and aluminum, it is desirable to sandwich titanium, molybdenum, or neodymium alloy between ITO and aluminum. As another example, when connecting silicon and aluminum, it is desirable to sandwich titanium, molybdenum, and neodymium alloy between ITO and aluminum.

Note that the wiring refers to an arrangement in which a conductor is arranged. It may extend linearly, or may be arranged short without extending. Therefore, the electrodes are included in the wiring.

Note that carbon nanotubes may be used as wirings, electrodes, conductive layers, conductive films, terminals, vias, plugs, and the like. Furthermore, since carbon nanotubes are translucent, they can be used for light-transmitting portions. For example, it can be used as a pixel electrode or a common electrode.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 4)
In this embodiment mode, a structure of a display device will be described.

The structure of the display device will be described with reference to FIG. FIG. 61A is a top view of a display device.

Pixel portion 170101, scanning line input terminal 170103 and signal line input terminal 170104
are formed on the substrate 170100, scanning lines are formed on the substrate 170100 extending in the row direction from the scanning line side input terminals 170103, and signal lines are formed on the substrate 170100 by extending from the signal line side input terminals 170104 in the column direction. It is formed on 170100. Pixels 170102 are arranged in a matrix at the intersections of scanning lines and signal lines in the pixel portion 170101 .

The scanning line input terminals 170103 are formed on both sides of the substrate 170100 in the row direction.
The scanning lines extending from one scanning line input terminal 170103 and the scanning lines extending from the other scanning line input terminal 170103 are alternately formed. In this case, pixel 1
70102 can be arranged at high density, a high-definition display device can be obtained. However, the present invention is not limited to this, and the scanning line side input terminals 170103 may be formed only on one side of the substrate 170100 in the row direction. In this case, the frame of the display device can be reduced. The region of the pixel portion 170101 can be enlarged. As another example, a scanning line extending from one scanning line side input terminal 170103 and another scanning line side input terminal 170103
may be common to the scanning lines extending from the . In this case, it is suitable for a display device having a large load on the scanning line, such as a large-sized display device. Note that signals are input to the scanning lines from an external driver circuit through the scanning line side input terminals 170103 .

The signal line side input terminal 170104 is formed on one side of the substrate 170100 in the column direction.
In this case, the frame of the display device can be reduced. The region of the pixel portion 170101 can be enlarged. However, the present invention is not limited to this, and the signal line side input terminals 170104 may be formed on both sides of the substrate 170100 in the column direction. In this case, pixels 170102 can be arranged at high density. It should be noted that the signal from the external drive circuit to the signal line side input terminal 1
70104 to the scanning line.

A pixel 170102 has a switching element and a pixel electrode. In each pixel 170102, the first terminal of the switching element is connected to the signal line, and the second terminal of the switching element is connected to the pixel electrode. The on/off of the switching element is controlled by the scanning line. However, it is not limited to this, and various configurations can be used.
For example, the pixel 170102 may have a capacitor. In this case, the capacitance line is connected to the substrate 1
70100 is preferred. As another example, pixel 170102 may have a current source such as a drive transistor. In this case, it is desirable to form the power line over the substrate 170100 .

As the substrate 170100, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk,
cotton, hemp), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrate, rubber substrate,
A stainless steel substrate, a substrate having a stainless steel foil, or the like can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. However, it is not limited to this, and various things can be used.

Note that switching elements included in the pixel 170102 include transistors (eg, bipolar transistors, MOS transistors, etc.), diodes (eg, PN diodes, PIN diodes, Schottky diodes, MIM (Metal Insulator),
r Metal) diode, MIS (Metal Insulator Semico
(nductor), a diode, a diode-connected transistor, etc.), a thyristor, or the like can be used. However, it is not limited to this, and various things can be used. Note that when a MOS transistor is used as the switching element of the pixel 170102, the gate electrode is connected to the scanning line, the first terminal is connected to the signal line, and the second terminal is connected to the pixel electrode.

So far, the case where a signal is input by an external drive circuit has been described. However, it is not limited to this, and an IC chip can be mounted on the display device.

For example, as shown in FIG. 62A, an IC chip 170201 can be mounted on a substrate 170100 by a COG (Chip on Glass) method. In this case, I
Since the C chip 170201 can be inspected before being mounted on the substrate 170100, the yield of the display device can be improved. Reliability can be improved. 61(A) are denoted by common reference numerals, and descriptions thereof are omitted.

As another example, as shown in FIG. 62(B), TAB (Tape Automated B
onding) method, the IC chip 170201 is FPC (Flexible P
printed circuit) 170200. In this case, IC
Since the chip 170201 can be inspected before being mounted on the FPC 170200, the yield of the display device can be improved. Reliability can be improved. 61(A) are denoted by common reference numerals, and descriptions thereof are omitted.

Here, not only the IC chip is mounted on the substrate 170100, but also the drive circuit is mounted on the substrate 1701.
00.

For example, a scanning line driver circuit 170105 can be formed over a substrate 170100 as shown in FIG. In this case, the cost can be reduced by reducing the number of parts. Reliability can be improved by reducing the number of connections with circuit components. Since the scanning line driver circuit 170105 has a low driving frequency, the scanning line driver circuit 170105 can be easily formed using amorphous silicon or microcrystalline silicon for semiconductor layers of transistors. Note that an IC chip for outputting a signal to the signal line may be mounted on the substrate 170100 by the COG method. Alternatively, an FPC on which an IC chip for outputting signals to signal lines is mounted by the TAB method may be arranged on the substrate 170100 . Note that the scanning line driving circuit 170105
may be mounted on the substrate 170100 by the COG method. Alternatively, an F in which an IC chip for controlling the scanning line driving circuit 170105 is mounted by the TAB method.
A PC may be placed on the substrate 170100 . 61(A) are denoted by common reference numerals, and descriptions thereof are omitted.

As another example, the scanning line driver circuit 170105 and the signal line driver circuit 170106 can be formed over the substrate 170100 as shown in FIG. Therefore, the cost can be reduced by reducing the number of parts. Reliability can be improved by reducing the number of connections with circuit components. Note that an IC chip for controlling the scanning line driver circuit 170105 may be mounted on the substrate 170100 by the COG method. Alternatively, the scanning line driving circuit 17
An FPC on which an IC chip for controlling 0105 is mounted by the TAB method is mounted on the substrate 170100.
can be placed in An IC chip for controlling the signal line driving circuit 170106 is mounted on the substrate 17.
0100 by the COG method. Alternatively, an FPC on which an IC chip for controlling the signal line driver circuit 170106 is mounted by the TAB method may be arranged on the substrate 170100 . 61(A) are denoted by common reference numerals, and descriptions thereof are omitted.

Next, the configuration of another display device will be described with reference to FIG. Specifically, a display device having a TFT substrate, a counter substrate, and a display layer sandwiched between the TFT substrate and the counter substrate will be described. FIG. 63 is a top view of the display device.

A pixel portion 170301, a scanning line driver circuit 170302a, a scanning line driver circuit 170302b, and a signal line driver circuit 170303 are formed over a substrate 170300. FIG. These pixel portion 170301, scanning line driving circuit 170302a, and scanning line driving circuit 170302
b and the signal line driver circuit 170303 are separated from the substrate 170300 by a sealing material 170321.
and the substrate 170310.

In addition, FPC 107320 is arranged on substrate 170300 . An IC chip 107321 is mounted on the FPC 170320 by the TAB method.

A plurality of pixels are arranged in a matrix in the pixel portion 170301 . Scanning lines are formed on the substrate 170300 extending in the row direction from the scanning line driving circuit 170302a. Scanning lines are formed on the substrate 170300 extending in the row direction from the scanning line driving circuit 170302b. A signal line extends from the signal line driving circuit 170303 in the column direction to the substrate 17.
0300.

A scanning line driving circuit 170302a is formed on one side of the substrate 170300 in the row direction, and a scanning line driving circuit 170302b is formed on the other side of the substrate 170300 in the row direction. The scanning lines extending from the scanning line driving circuit 170302a and the scanning lines extending from the scanning line driving circuit 170302b are alternately formed. Therefore, a high-definition display device can be obtained. However, the present invention is not limited to this, and either one of the scanning line driver circuit 170302 a and the scanning line driver circuit 170302 b may be formed over the substrate 170300 . In this case, the frame of the display device can be reduced. The region of the pixel portion 170301 can be enlarged. As another example, the scanning lines extending from the scanning line driving circuit 170302a and the scanning lines extending from the scanning line driving circuit 170302b may be common. In this case, it is suitable for a display device having a large load on the scanning line, such as a large-sized display device.

The signal line driver circuit 170303 is formed on one side of the substrate 170300 in the column direction. Therefore, the frame of the display device can be reduced. The region of the pixel portion 170301 can be enlarged. However, it is not limited to this, and the signal line driver circuit 170303
They may be formed on both sides of the 0300 in the column direction. In this case, a high-definition display device can be obtained.

As the substrate 170300, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk,
cotton, hemp), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrate, rubber substrate,
A stainless steel substrate, a substrate having a stainless steel foil, or the like can be used. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. However, it is not limited to this, and various things can be used.

Note that switching elements included in the display device include transistors (eg, bipolar transistors, MOS transistors, etc.), diodes (eg, PN diodes, PIN
Diode, Schottky diode, MIM (Metal Insulator Me
tal) Diode, MIS (Metal Insulator Semiconductor
tor) diodes, diode-connected transistors, etc.), thyristors, and the like can be used. However, it is not limited to this, and various things can be used.

So far, the case where the driver circuit is formed on the same substrate as the pixel portion has been described. However, the present invention is not limited to this, and another substrate on which part or all of the driver circuit is formed may be mounted as an IC chip on the substrate on which the pixel portion is formed.

For example, as shown in FIG. 64A, an IC chip 170401 is used instead of the signal line driver circuit.
can be mounted on the substrate 170300 by the COG method. In this case, an increase in power consumption can be prevented by mounting the IC chip 170401 on the substrate 170300 by the COG method instead of the signal line driver circuit. This is because the signal line driving circuit has a high driving frequency and consumes a large amount of power. Since the IC chip 170401 can be inspected before being mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be improved. Since the scanning line driver circuit 170302a and the scanning line driver circuit 170302b have a low driving frequency, the scanning line driver circuit 170302a and the scanning line driver circuit 170302b can be easily formed using amorphous silicon or microcrystalline silicon for semiconductor layers of transistors. can be done. Therefore, a display device can be manufactured using a large-sized substrate. It should be noted that common reference numerals are used for portions that are common to the configuration of FIG. 63, and descriptions thereof are omitted.

As another example, as shown in FIG. 64B, an IC chip 170 is used instead of the signal line driver circuit.
401 is mounted on the substrate 170300 by the COG method, the IC chip 170501a is mounted on the substrate 170300 in place of the scanning line driving circuit 170302a by the COG method, and the IC chip 170501b is mounted on the substrate 170300 in place of the scanning line driving circuit 170302b by the COG method. May be implemented. In this case, since the IC chip 170401, the IC chip 170501a, and the IC chip 170501b can be inspected before being mounted on the substrate 170300, the yield of the display device can be improved. Reliability can be improved. substrate 170300
Amorphous silicon or microcrystalline silicon can be easily used for a semiconductor layer of a transistor formed in the first layer. Therefore, a display device can be manufactured using a large-sized substrate. It should be noted that common reference numerals are used for portions that are common to the configuration of FIG. 63, and descriptions thereof are omitted.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined or replaced with the content (may be part of) described in the drawing of another embodiment. etc. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 5)
In this embodiment mode, the operation of the display device will be described.

FIG. 65 is a diagram showing a configuration example of a display device.

The display device 180100 includes a pixel portion 180101, a signal line driver circuit 180103, and a scanning line driver circuit 180104. In the pixel portion 180101, a plurality of signal lines S1 to Sm are arranged extending from the signal line driver circuit 180103 in the column direction. Pixel part 180101
, a plurality of scanning lines G1 to Gn are arranged extending from the scanning line driving circuit 180104 in the row direction. Pixels 180102 are arranged in a matrix at the intersections of the plurality of signal lines S1 to Sm and the plurality of scanning lines G1 to Gn.

Note that the signal line driver circuit 180103 has a function of outputting a signal to each of the signal lines S1 to Sn. This signal may be called a video signal. Note that the scanning line driving circuit 180104
has a function of outputting a signal to each of the scanning lines G1 to Gm. This signal may be called a scanning signal.

Note that the pixel 180102 has at least a switching element connected to a signal line. This switching element is controlled to be on or off by the potential of the scanning line (scanning signal). The pixel 180102 is selected when the switching element is on, and the pixel 180102 is not selected when the switching element is off.

When the pixel 180102 is selected (selected state), a video signal is input to the pixel 180102 from the signal line. The state of the pixel 180102 (for example, luminance, transmittance, voltage of the storage capacitor, etc.) changes according to the input video signal.

When the pixel 180102 is not selected (unselected state), the video signal is the pixel 1801
02 is not entered. However, since the pixel 180102 holds a potential according to the video signal input at the time of selection, the pixel 180102 maintains (for example, luminance, transmittance, voltage of the storage capacitor, etc.) according to the video signal.

Note that the configuration of the display device is not limited to that shown in FIG. For example, a new wiring (scanning line, signal line, power supply line, capacitor line, common line, or the like) may be added according to the configuration of the pixel 180102 . As another example, circuits with various functions may be added.

FIG. 66 shows an example of a timing chart for explaining the operation of the display device.

The timing chart in FIG. 66 shows one frame period corresponding to the period for displaying an image for one screen. Although one frame period is not particularly limited, it is preferably at least 1/60 second or less so that the viewer of the image does not perceive flicker.

The timing chart of FIG. 66 shows the first scanning line G1, the i-th scanning line Gi (scanning line G1
to Gm), the i+1-th scanning line Gi+1, and the m-th scanning line Gm.

Note that the pixels 180102 connected to the scanning line are also selected at the same time when the scanning line is selected. For example, when the i-th scanning line Gi is selected, the pixel 180102 connected to the i-th scanning line Gi is also selected.

Each of the scanning lines G1 to Gm is selected in order from the first scanning line G1 to the m-th scanning line Gm (hereinafter also referred to as scanning). For example, during the period when the i-th scanning line Gi is selected, the scanning lines other than the i-th scanning line Gi (G1 to Gi−1, Gi+1 to Gm
) is not selected. Then, in the next period, the i+1-th scanning line Gi+1 is selected. Note that a period in which one scanning line is selected is called one gate selection period.

Therefore, when a row of scan lines is selected, the pixels 180 connected to that scan line are
A video signal is input to 102 from each of the signal lines G1 to Gm. For example, i
While the scanning line Gi of the row is selected, the plurality of pixels 180102 connected to the scanning line Gi of the i-th row receive arbitrary video signals from the signal lines S1 to Sn.
Thus, individual pixels 180102 can be independently controlled by scanning and video signals.

Next, a case where one gate selection period is divided into a plurality of sub-gate selection periods will be described.
FIG. 67 shows a timing chart when one gate selection period is divided into two sub-gate selection periods (first sub-gate selection period and second sub-gate selection period).

Note that one gate selection period can be divided into three or more sub-gate selection periods.

The timing chart in FIG. 67 shows one frame period corresponding to the period for displaying an image for one screen. Although one frame period is not particularly limited, it is preferably at least 1/60 second or less so that the viewer of the image does not perceive flicker.

Note that one frame consists of two subframes (first subframe and second subframe)
is divided into

In the timing chart of FIG. 67, the i-th scanning line Gi, the i+1-th scanning line Gi+1, j
It shows the timing at which the row scanning line Gj (any one of the scanning lines Gi+1 to Gm), the j+1 row scanning line, and the Gj+1 row scanning line Gj+1 are selected.

Note that the pixels 180102 connected to the scanning line are also selected at the same time when the scanning line is selected. For example, when the i-th scanning line Gi is selected, the pixel 180102 connected to the i-th scanning line Gi is also selected.

Each of the scanning lines G1 to Gm is sequentially scanned within each sub-gate selection period. For example, in one gate selection period, the i-th scanning line Gi is selected during the first sub-gate selection period, and the j-th scanning line Gj is selected during the second sub-gate selection period.
Then, in one gate selection period, it is possible to operate as if scanning signals for two rows were selected at the same time. At this time, different video signals are input to the signal lines S1 to Sn during the first sub-gate selection period and the second sub-gate selection period. therefore,
A plurality of pixels 180102 connected to the i-th row and a plurality of pixels 1 connected to the j-th row
80102 can receive separate video signals.

Next, a drive method for converting the frame rate of input image data (also referred to as input frame rate) and the frame rate of display (also referred to as display frame rate) will be described. Note that the frame rate is the number of frames per second, and the unit is Hz.

In this embodiment, the input frame rate does not necessarily have to match the display frame rate. When the input frame rate and the display frame rate are different, the frame rate can be converted by a circuit (frame rate conversion circuit) for converting the frame rate of image data. By doing so, even when the input frame rate and the display frame rate are different, display can be performed at various display frame rates.

When the input frame rate is higher than the display frame rate, part of the input image data can be discarded to convert to various display frame rates for display.
In this case, since the display frame rate can be reduced, the operating frequency of the driving circuit for display can be reduced, and power consumption can be reduced. On the other hand, when the input frame rate is lower than the display frame rate, all or part of the input image data is displayed multiple times, another image is generated from the input image data, and the input image data is By using means such as generating irrelevant images, it is possible to convert and display at various display frame rates. In this case, the quality of moving images can be improved by increasing the display frame rate.

In this embodiment, a frame rate conversion method when the input frame rate is lower than the display frame rate will be described in detail. Note that the frame rate conversion method when the input frame rate is higher than the display frame rate can be realized by performing the reverse procedure of the frame rate conversion method when the input frame rate is lower than the display frame rate. can.

In this embodiment, an image displayed at the same frame rate as the input frame rate is called a basic image. On the other hand, an image that is displayed at a frame rate different from that of the base image and that is displayed to match the input frame rate and the display frame rate is called an interpolated image. The same image as the input image data can be used as the basic image. The same image as the basic image can be used for the interpolated image. Furthermore, an image different from the basic image can be created, and the created image can be used as the interpolated image.

When creating an interpolated image, the temporal change (movement of the image) in the input image data is detected, and an intermediate state image is used as the interpolated image. as an interpolated image, a method in which a plurality of different images are created from the input image data, and the plurality of images are presented continuously in time (one of the plurality of images is used as a basic image,
The remainder is used as an interpolated image) so that the observer perceives as if an image corresponding to the input image data was displayed. Methods of creating a plurality of different images from input image data include a method of converting the gamma value of the input image data, a method of dividing the gradation values included in the input image data, and the like.

An image in an intermediate state (intermediate image) is an image obtained by detecting a temporal change (movement of an image) in input image data and interpolating the detected movement. Obtaining an intermediate image by such a method is called motion compensation.

Next, a specific example of the frame rate conversion method will be described. According to this method, any rational number (n/m) times frame rate conversion can be realized. Here, n and m are integers of 1 or more. The frame rate conversion method in this embodiment can be divided into a first step and a second step. Here, the first step is to convert the frame rate to an arbitrary rational number (n/m) times. Here, a basic image may be used as the interpolated image, or an intermediate image obtained by motion compensation may be used as the interpolated image. The second step is to create a plurality of different images (sub-images) from the input image data or each image subjected to the frame rate conversion in the first step, and temporally contiguous the plurality of sub-images. It is a step for performing a method of displaying by By using the method according to the second step, it is possible to visually perceive to the human eye that the original image is displayed even though a plurality of different images are actually displayed.

Note that the frame rate conversion method according to the present embodiment may use both the first step and the second step, may omit the first step and use only the second step, or may use only the second step. Step 2 may be omitted and only the first step may be used.

First, as the first step, arbitrary rational number (n/m) times frame rate conversion will be described. (See FIG. 68) In FIG. 68, the horizontal axis is time, and the vertical axis is divided into cases for various n and m. Figures in FIG. 68 represent schematic diagrams of images to be displayed, and represent the timing of display according to their horizontal positions. Furthermore, it is assumed that the motion of the image is schematically represented by the points displayed in the figure. However, this is an example for explanation, and the displayed image is not limited to this. This method can be applied to various images.

A period Tin represents the cycle of the input image data. The cycle of input image data corresponds to the input frame rate. For example, when the input frame rate is 60 Hz, the period of input image data is 1/60 second. Similarly, if the input frame rate is 50Hz,
The period of the input image data is 1/50 second. Thus, the period of the input image data (unit:
seconds) is the reciprocal of the input frame rate (unit: Hz). Various input frame rates can be used. For example, 24Hz, 50Hz, 60Hz, 70Hz,
48 Hz, 100 Hz, 120 Hz, 140 Hz, etc. can be mentioned. where 2
4 Hz is a frame rate used for film movies and the like. 50 Hz is a frame rate used for PAL standard video signals and the like. 60 Hz is a frame rate used for NTSC standard video signals and the like. 70 Hz is a frame rate used for display input signals of personal computers and the like. 48Hz, 100Hz, 120Hz,
140 Hz, is a frame rate double these. Note that the frame rate is not limited to double, and various multiples of the frame rate may be used. Thus, according to the method shown in this embodiment, it is possible to realize frame rate conversion for input signals of various standards.

The procedure for arbitrary rational (n/m) times frame rate conversion in the first step is as follows.
As procedure 1, the k-th interpolated image (k is an integer of 1 or more; the initial value is 1
) is displayed. It is assumed that the display timing of the k-th interpolated image is the point in time when a period obtained by multiplying the cycle of the input image data by k (m/n) has passed since the first basic image was displayed.
As procedure 2, it is determined whether the coefficient k(m/n) used for determining the display timing of the k-th interpolated image is an integer. If it is an integer, the (k(m/n)+1)-th basic image is displayed at the display timing of the k-th interpolated image, and the first step ends. If it is not an integer, go to step 3.
As procedure 3, an image to be used as the k-th interpolation image is determined. Specifically, the coefficient k(m/n) used for determining the display timing of the k-th interpolated image is converted into x+y/n. Here x and y are integers and y is a number less than n. When the k-th interpolated image is an intermediate image obtained by motion compensation, the k-th interpolated image is the (x+1)-th interpolated image.
) to the (x+2)-th basic image multiplied by (y/n). If the k-th interpolated image is the same image as the basic image, the (x+1)-th basic image can be used. A method of obtaining an intermediate image as an image corresponding to a motion obtained by multiplying the motion of the image by (y/n) will be described in detail in another section.
As procedure 4, the target interpolated image is moved to the next interpolated image. Specifically, the value of k is incremented by 1, and the process returns to step 1.

Next, in the procedure in the first step, the values of n and m will be specifically shown and explained in detail.

Note that the mechanism for executing the procedure in the first step may be implemented in the device, or may be determined in advance at the design stage of the device. If the apparatus is equipped with a mechanism for executing the procedure in the first step, it becomes possible to switch the driving method so that the optimum operation according to the situation is performed. The conditions here refer to the content of the image data, the environment inside and outside the device (temperature, humidity, air pressure, light, sound, magnetic field, electric field, radiation dose,
altitude, acceleration, movement speed, etc.), user settings, software version, etc. On the other hand, if the mechanism for executing the procedure in the first step is determined in advance at the design stage of the device, the optimum driving circuit can be used for each driving method, and the mechanism is already determined. As a result, a reduction in manufacturing costs can be expected due to the effect of mass production.

When n=1, m=1, that is, when the conversion ratio (n/m) is 1 (n=1, m=1 in FIG. 68), the operation in the first step is as follows. First, when k=1, in procedure 1, the display timing of the first interpolated image for the first basic image is determined. The display timing of the first interpolated image is set so that the cycle of the input image data is k (m
/n) times, i.e., when a period of time multiplied by 1 has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the first interpolated image is an integer. Here, since the coefficient k(m/n) is 1, it is an integer. Therefore, at the display timing of the first interpolated image, the (k(m/n)+1)-th, that is, the second basic image is displayed, and the first step ends.

That is, when the conversion ratio is 1, the k-th image is the basic image, the k+1-th image is the basic image, and the image display cycle is one time the cycle of the input image data. do.

As a concrete expression, when the conversion ratio is 1 (n/m=1),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
A display device driving method for sequentially displaying a k+1-th image and an interval equal to the cycle of input image data,
the k-th image is displayed according to the i-th image data;
The k+1-th image is displayed according to the i+1-th image data.

Here, when the conversion ratio is 1, the frame rate conversion circuit can be omitted, so there is an advantage that the manufacturing cost can be reduced. Furthermore, a conversion ratio of 1 has the advantage that the quality of moving images can be improved over a conversion ratio of less than 1. Furthermore, when the conversion ratio is 1, there is an advantage that power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is greater than 1.

When n=2 and m=1, that is, when the conversion ratio (n/m) is 2 (where n=2 and m=1 in FIG. 68), the operation in the first step is as follows. First, when k=1, in procedure 1, the display timing of the first interpolated image for the first basic image is determined. The display timing of the first interpolated image is set so that the cycle of the input image data is k (m
/n) times, i.e., when a period of 1/2 times has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the first interpolated image is an integer. Here, the coefficient k(m/n) is 1/2, so it is not an integer. Therefore, proceed to step 3.

In procedure 3, an image to be used as the first interpolated image is determined. Therefore, the factor 1/2 is x
+ Convert to the form y/n. For a factor of 1/2, x=0 and y=1. When the first interpolated image is an intermediate image obtained by motion compensation, the first interpolated image is the (x+
1) An intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x+2)th, i.e. the second basic image, by y/n, that is, by 1/2. first
If the interpolated image is the same image as the basic image, the (x+1)th, ie, the first basic image can be used.

By the procedure so far, the display timing of the first interpolated image and the image to be displayed as the first interpolated image can be determined. Next, in procedure 4, the target interpolated image is moved from the first interpolated image to the second interpolated image. That is, change k from 1 to 2 and return to procedure 1.

When k=2, in procedure 1, the display timing of the second interpolated image with respect to the first basic image is determined. The display timing of the second interpolated image is the point in time when a period obtained by multiplying the cycle of the input image data by k (m/n), ie, by 1, has elapsed since the first basic image was displayed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the second interpolated image is an integer. Here, since the coefficient k(m/n) is 1, it is an integer. Therefore, at the display timing of the second interpolated image, the (k(m/n)+1)-th, that is, the second basic image is displayed, and the first step ends.

That is, if the conversion ratio is 2 (n/m=2),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2-th image is a basic image, and the image display cycle is 1/2 times the cycle of the input image data.

As a concrete expression, when the conversion ratio is 2 (n/m=2),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
A display device driving method for sequentially displaying a k+2-th image and an image at an interval of 1/2 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 1/2;
The k+2-th image is displayed according to the i+1-th image data.

As another concrete expression, if the conversion ratio is 2 (n/m=2),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
A display device driving method for sequentially displaying a k+2-th image and an image at an interval of 1/2 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
The k+2-th image is displayed according to the i+1-th image data.

Specifically, when the conversion ratio is 2, it is also called double-speed driving or simply double-speed driving.
For example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (
120 Hz drive). Then, one input image is displayed twice in succession. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display device is an active matrix liquid crystal display device,
A particularly remarkable image quality improvement effect is brought about. This is related to the problem of insufficient write voltage due to so-called dynamic capacitance, in which the electrostatic capacitance of the liquid crystal element varies with applied voltage. That is, by making the display frame rate higher than the input frame rate, the frequency of the image data write operation can be increased, thereby reducing obstacles such as moving image tailing and afterimages caused by insufficient write voltage due to dynamic capacitance. be able to. Furthermore, it is also effective to combine AC driving and 120 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 120 Hz, the frequency of the AC drive is set to an integral multiple or a fraction of that (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.). It can be reduced to the extent that it is imperceptible to the human eye.

When n=3 and m=1, that is, when the conversion ratio (n/m) is 3 (where n=3 and m=1 in FIG. 68), the operation in the first step is as follows. First, when k=1, in procedure 1, the display timing of the first interpolated image for the first basic image is determined. The display timing of the first interpolated image is set so that the cycle of the input image data is k (m
/n) times, that is, when a period of 1/3 times has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the first interpolated image is an integer. Here, the coefficient k(m/n) is 1/3, so it is not an integer. Therefore, proceed to step 3.

In procedure 3, an image to be used as the first interpolated image is determined. Therefore, the factor 1/3 is x
+ Convert to the form y/n. For a factor of 1/3, x=0 and y=1. When the first interpolated image is an intermediate image obtained by motion compensation, the first interpolated image is the (x+
1) An intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x+2)th, i.e., the second basic image, by y/n, ie, ⅓ times. first
If the interpolated image is the same image as the basic image, the (x+1)th, ie, the first basic image can be used.

By the procedure so far, the display timing of the first interpolated image and the image to be displayed as the first interpolated image can be determined. Next, in procedure 4, the target interpolated image is moved from the first interpolated image to the second interpolated image. That is, change k from 1 to 2 and return to procedure 1.

When k=2, in procedure 1, the display timing of the second interpolated image with respect to the first basic image is determined. The display timing of the second interpolated image is the point in time when a period obtained by multiplying the period of the input image data by k (m/n) times, ie, by 2/3, has elapsed since the first basic image was displayed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the second interpolated image is an integer. Here, the coefficient k(m/n) is 2/3, so it is not an integer. Therefore, proceed to step 3.

In procedure 3, an image to be used as the second interpolated image is determined. Therefore, the factor 2/3 is x
+ Convert to the form y/n. For a factor of 2/3, x=0 and y=2. When the second interpolated image is an intermediate image obtained by motion compensation, the second interpolated image is the (x+
1) An intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x+2)th, i.e., the second basic image, by y/n, ie, 2/3 times. second
If the interpolated image is the same image as the basic image, the (x+1)th, ie, the first basic image can be used.

By the procedure so far, the display timing of the second interpolated image and the image to be displayed as the second interpolated image can be determined. Next, in procedure 4, the target interpolated image is moved from the second interpolated image to the third interpolated image. That is, change k from 2 to 3 and return to procedure 1.

When k=3, in procedure 1, the display timing of the third interpolated image with respect to the first basic image is determined. The display timing of the third interpolated image is the point in time when a period obtained by multiplying the cycle of the input image data by k (m/n), ie, by 1, has elapsed since the first basic image was displayed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the third interpolated image is an integer. Here, since the coefficient k(m/n) is 1, it is an integer. Therefore, at the display timing of the third interpolated image, the (k(m/n)+1)-th, that is, the second basic image is displayed, and the first step ends.

That is, if the conversion ratio is 3 (n/m=3),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2th image is an interpolated image,
The k+3th image is a basic image, and the image display cycle is ⅓ times the cycle of the input image data.

As a concrete expression, when the conversion ratio is 3 (n/m=3),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
A display device driving method for sequentially displaying a k+3-th image and an image at intervals of ⅓ times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by ⅓;
the k+2-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image to the i+1-th image by 2/3;
The k+3th image is characterized by being displayed according to the i+1th image data.

As another specific expression, if the conversion ratio is 3 (n/m=3),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
A display device driving method for sequentially displaying a k+3-th image and an image at intervals of ⅓ times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
the k+2 th image is displayed according to the i th image data;
The k+3th image is characterized by being displayed according to the i+1th image data.

Here, when the conversion ratio is 3, there is an advantage that the quality of moving images can be improved more than when the conversion ratio is smaller than 3. Furthermore, when the conversion ratio is 3, there is an advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 3.

Specifically, when the conversion ratio is 3, it is also called triple-speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, one input image is displayed three times in succession. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, the AC drive of the liquid crystal display and the 180 Hz
It is also effective to combine driving. That is, the driving frequency of the liquid crystal display device is set to 180H.
z, and the frequency of the AC drive is set to an integer multiple or an integral fraction thereof (for example, 45 Hz, 9
0 Hz, 180 Hz, 360 Hz, etc.), it is possible to reduce flicker that appears due to AC driving to a level that is not perceived by the human eye.

n=3, m=2, that is, the conversion ratio (n/m) is 3/2 (n=3, m=2 in FIG. 68)
, the operation in the first step is as follows. First, when k=1, procedure 1
Now, the display timing of the first interpolated image with respect to the first basic image is determined. The display timing of the first interpolated image is set so that the cycle of the input image data is k after the first basic image is displayed.
(m/n) times, that is, when a period of time multiplied by 2/3 has elapsed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the first interpolated image is an integer. Here, the coefficient k(m/n) is 2/3, so it is not an integer. Therefore, proceed to step 3.

In procedure 3, an image to be used as the first interpolated image is determined. Therefore, the factor 2/3 is x
+ Convert to the form y/n. For a factor of 2/3, x=0 and y=2. When the first interpolated image is an intermediate image obtained by motion compensation, the first interpolated image is the (x+
1) An intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the first basic image to the (x+2)th, i.e., the second basic image, by y/n, ie, 2/3 times. first
If the interpolated image is the same image as the basic image, the (x+1)th, ie, the first basic image can be used.

By the procedure so far, the display timing of the first interpolated image and the image to be displayed as the first interpolated image can be determined. Next, in procedure 4, the target interpolated image is moved from the first interpolated image to the second interpolated image. That is, change k from 1 to 2 and return to procedure 1.

When k=2, in procedure 1, the display timing of the second interpolated image with respect to the first basic image is determined. The display timing of the second interpolated image is the point in time when a period obtained by multiplying the cycle of the input image data by k (m/n), ie, by 4/3, has elapsed since the first basic image was displayed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the second interpolated image is an integer. Here, the coefficient k(m/n) is 4/3, so it is not an integer. Therefore, proceed to step 3.

In procedure 3, an image to be used as the second interpolated image is determined. Therefore, the factor 4/3 is x
+ Convert to the form y/n. For a factor of 4/3, x=1 and y=1. When the second interpolated image is an intermediate image obtained by motion compensation, the second interpolated image is the (x+
1) An intermediate image obtained as an image corresponding to a motion obtained by multiplying the motion of the image from the second basic image to the (x+2)th, i.e., the third basic image, by y/n, ie, ⅓ times. second
If the interpolated image is the same image as the base image, the (x+1) th or second base image can be used.

By the procedure so far, the display timing of the second interpolated image and the image to be displayed as the second interpolated image can be determined. Next, in procedure 4, the target interpolated image is moved from the second interpolated image to the third interpolated image. That is, change k from 2 to 3 and return to procedure 1.

When k=3, in procedure 1, the display timing of the third interpolated image with respect to the first basic image is determined. The display timing of the third interpolated image is the point in time when a period obtained by multiplying the period of the input image data by k (m/n), that is, by doubling the period of the input image data has elapsed since the first basic image was displayed.

Next, in procedure 2, it is determined whether or not the coefficient k(m/n) used for determining the display timing of the third interpolated image is an integer. Here, since the coefficient k(m/n) is 2, it is an integer. Therefore, at the display timing of the third interpolated image, the (k(m/n)+1)-th, that is, the third basic image is displayed, and the first step ends.

That is, if the conversion ratio is 3/2 (n/m=3/2),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2th image is an interpolated image,
The k+3-th image is a basic image, and the image display period is ⅔ times the period of the input image data.

As a concrete expression, when the conversion ratio is 3/2 (n/m=3/2),
i-th (i is a positive integer) image data;
i+1-th image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
A display device driving method for sequentially displaying a k+3-th image and an image at an interval of 2/3 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 2/3;
The k+2 th image is ⅓ the motion from the i+1 th image to the i+2 th image.
displayed according to the image data corresponding to the multiplied movement,
The k+3-th image is displayed according to the i+2-th image data.

As another concrete expression, if the conversion ratio is 3/2 (n/m=3/2),
i-th (i is a positive integer) image data;
i+1-th image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
A display device driving method for sequentially displaying a k+3-th image and an image at an interval of 2/3 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
the k+2-th image is displayed according to the i+1-th image data;
The k+3-th image is displayed according to the i+2-th image data.

Here, when the conversion ratio is 3/2, there is an advantage that the quality of moving images can be improved more than when the conversion ratio is smaller than 3/2. Further, if the conversion ratio is 3/2, then the conversion ratio is 3/
It has the advantage of being able to reduce power consumption and manufacturing costs compared to the case of greater than two.

Specifically, when the conversion ratio is 3/2, it is also called 3/2 speed driving or 1.5 speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 90
Hz (90 Hz drive). Then, the images are displayed three times consecutively for the two input images. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to driving methods with high driving frequencies such as 120 Hz driving (double speed driving) and 180 Hz driving (triple speed driving), motion compensation can reduce the operating frequency of the circuit that obtains the intermediate image, so that an inexpensive circuit can be used. , manufacturing costs and power consumption can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided.
This provides a particularly remarkable image quality improvement effect for obstacles such as afterimages. Furthermore, it is also effective to combine AC driving and 90 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 90 Hz, the frequency of the AC drive is set to an integer multiple or an integer fraction (for example, 3
0 Hz, 45 Hz, 90 Hz, 180 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to a level that is not perceived by the human eye.

Details of the procedure for positive integers n and m other than the above are omitted, but the conversion ratio can be set as an arbitrary rational number (n/m) by following the procedure for frame rate conversion in the first step. can. Among the combinations of positive integers n and m, the conversion ratio (n/
Combinations in which m) can be canceled can be handled in the same manner as conversion ratios after cancellation.

For example, when n=4, m=1, that is, the conversion ratio (n/m) is 4 (n=4, m=1 in FIG. 68),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2th image is an interpolated image,
The k+3th image is an interpolated image,
The k+4th image is a basic image, and the image display cycle is 1/4 times the cycle of the input image data.

More specifically, when the conversion ratio is 4 (n/m=4),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
A display device driving method for sequentially displaying a k+4-th image and an image at an interval of 1/4 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 1/4;
the k+2-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 1/2;
the k+3-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 3/4;
The k+4-th image is displayed according to the i+1-th image data.

As another concrete expression, if the conversion ratio is 4 (n/m=4),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
A display device driving method for sequentially displaying a k+4-th image and an image at an interval of 1/4 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
the k+2 th image is displayed according to the i th image data;
the k+3 th image is displayed according to the i th image data;
The k+4-th image is displayed according to the i+1-th image data.

Here, when the conversion ratio is 4, there is an advantage that the quality of moving images can be improved more than when the conversion ratio is smaller than 4. Furthermore, when the conversion ratio is 4, there is an advantage that power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 4.

Specifically, when the conversion ratio is 4, it is also called quadruple speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, one input image is displayed four times in succession. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, 120
Compared to drive methods with low drive frequencies such as Hz drive (double speed drive) and 180 Hz drive (triple speed drive), intermediate images obtained by motion compensation with higher accuracy can be used as interpolated images. The motion can be smoothed and the quality of moving images can be significantly improved. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is effective to combine the AC drive and the 240 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 240 Hz, by setting the frequency of the AC drive to an integral multiple or a fraction of that (for example, 30 Hz, 40 Hz, 60 Hz, 120 Hz, etc.), the flicker caused by the AC drive is It can be reduced to the extent that it is imperceptible to the human eye.

Further, for example, n=4, m=3, that is, the conversion ratio (n/m) is 4/3 (n=
4, where m = 3),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2th image is an interpolated image,
The k+3th image is an interpolated image,
The k+4th image is a basic image, and the image display cycle is 3/4 times the cycle of the input image data.

More specifically, when the conversion ratio is 4/3 (n/m=4/3),
i-th (i is a positive integer) image data;
i+1-th image data;
i+2th image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
A display device driving method for sequentially displaying a k+4-th image and an image at intervals of 3/4 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 3/4;
The k+2-th image has half the motion from the i+1-th image to the i+2-th image.
displayed according to the image data corresponding to the multiplied movement,
The k+3 th image is ¼ the motion from the i+2 th image to the i+3 th image.
displayed according to the image data corresponding to the multiplied movement,
The k+4th image is characterized by being displayed according to the i+3th image data.

As another concrete expression, if the conversion ratio is 4/3 (n/m=4/3),
i-th (i is a positive integer) image data;
i+1-th image data;
i+2th image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
A display device driving method for sequentially displaying a k+4-th image and an image at intervals of 3/4 times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
the k+2-th image is displayed according to the i+1-th image data;
the k+3th image is displayed according to the i+2th image data;
The k+4th image is characterized by being displayed according to the i+3th image data.

Here, when the conversion ratio is 4/3, there is an advantage that the quality of moving images can be improved more than when the conversion ratio is smaller than 4/3. Further, if the conversion ratio is 4/3, then the conversion ratio is 4/
It has the advantage of being able to reduce power consumption and manufacturing costs compared to the case of greater than 3.

Specifically, when the conversion ratio is 4/3, it is also called 4/3 speed driving or 1.25 speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 8
0 Hz (80 Hz drive). Then, the images are displayed four times in succession with respect to the three input images. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to driving methods with high driving frequencies such as 120 Hz driving (double speed driving) and 180 Hz driving (triple speed driving), motion compensation can reduce the operating frequency of the circuit that obtains the intermediate image, so that an inexpensive circuit can be used. , manufacturing costs and power consumption can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is also effective to combine AC driving and 80 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 80 Hz, the frequency of the AC drive is set to an integer multiple or an integer fraction thereof (for example,
40 Hz, 80 Hz, 160 Hz, 240 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to a level that is not perceived by the human eye.

Further, for example, n=5, m=1, that is, the conversion ratio (n/m) is 5 (n=5, m in FIG.
m = 1),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2th image is an interpolated image,
The k+3th image is an interpolated image,
The k+4th image is an interpolated image,
The k+5th image is a basic image, and the image display cycle is ⅕ times the cycle of the input image data.

More specifically, when the conversion ratio is 5 (n/m=5),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
the k+4th image;
A driving method for a display device for sequentially displaying a k+5th image and an image at intervals of ⅕ times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by ⅕;
the k+2-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 2/5;
the k+3-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 3/5;
the k+4-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 4/5;
The k+5-th image is displayed according to the i+1-th image data.

As another specific expression, if the conversion ratio is 5 (n/m=5),
i-th (i is a positive integer) image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
the k+4th image;
A driving method for a display device for sequentially displaying a k+5th image and an image at intervals of ⅕ times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
the k+2 th image is displayed according to the i th image data;
the k+3 th image is displayed according to the i th image data;
the k+4th image is displayed according to the i-th image data;
The k+5-th image is displayed according to the i+1-th image data.

Here, when the conversion ratio is 5, there is an advantage that the quality of moving images can be improved more than when the conversion ratio is smaller than 5. Furthermore, when the conversion ratio is 5, there is an advantage that power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is greater than 5.

Specifically, when the conversion ratio is 5, it is also called quintuple speed driving. For example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, one input image is displayed five times in succession. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, 120
Compared to drive methods with low drive frequencies such as Hz drive (double speed drive) and 180 Hz drive (triple speed drive), intermediate images obtained by motion compensation with higher accuracy can be used as interpolated images. The motion can be smoothed and the quality of moving images can be significantly improved. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is also effective to combine AC driving and 300 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 300 Hz, the frequency of the AC drive is set to an integer multiple or a fraction of that (for example, 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.). It can be reduced to the extent that it is imperceptible to the human eye.

Further, for example, n=5, m=2, that is, the conversion ratio (n/m) is 5/2 (n=
5, where m = 2),
The kth image is the base image,
The k+1th image is an interpolated image,
The k+2th image is an interpolated image,
The k+3th image is an interpolated image,
The k+4th image is an interpolated image,
The k+5th image is a basic image, and the image display cycle is ⅕ times the cycle of the input image data.

More specifically, when the conversion ratio is 5/2 (n/m=5/2),
i-th (i is a positive integer) image data;
i+1-th image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
the k+4th image;
A driving method for a display device for sequentially displaying a k+5th image and an image at intervals of ⅕ times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 2/5;
the k+2-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 4/5;
the k+3-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i+1-th image data to the i+2-th image data by ⅕;
the k+4-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i+1-th image data to the i+2-th image data by 3/5;
The k+5th image is characterized by being displayed according to the i+2th image data.

As another concrete expression, if the conversion ratio is 5/2 (n/m=5/2),
i-th (i is a positive integer) image data;
i+1-th image data;
is sequentially input as input image data at a constant cycle, and
a k-th (k is a positive integer) image;
a k+1-th image;
a k+2th image;
a k+3th image;
the k+4th image;
A driving method for a display device for sequentially displaying a k+5th image and an image at intervals of ⅕ times the cycle of input image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to the i-th image data;
the k+2 th image is displayed according to the i th image data;
the k+3th image is displayed according to the i+1th image data;
the k+4th image is displayed according to the i+1th image data;
The k+5th image is characterized by being displayed according to the i+2th image data.

Here, when the conversion ratio is 5/2, there is an advantage that the quality of moving images can be improved more than when the conversion ratio is smaller than 5/2. Furthermore, a conversion ratio of 5/2 has the advantage of being able to reduce power consumption and manufacturing costs compared to conversion ratios greater than 5.

Specifically, when the conversion ratio is 5, it is also called 5/2 speed driving or 2.5 speed driving. For example, if the input frame rate is 60Hz, the display frame rate is 150H.
z (150 Hz drive). Then, the images are displayed five times consecutively for the two input images. At this time, if the interpolated image is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so that the quality of the moving image can be significantly improved. In particular, compared to a drive method with a low drive frequency such as 120 Hz drive (double speed drive), intermediate images obtained by motion compensation with higher accuracy can be used as interpolated images, so that the motion of moving images can be smoothed further. can significantly improve the quality of moving images. Furthermore, compared to driving methods with a high driving frequency such as 180 Hz driving (triple speed driving), motion compensation can reduce the operating frequency of the circuit that obtains the intermediate image. can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is also effective to combine AC driving and 150 Hz driving of the liquid crystal display device. That is, the drive frequency of the liquid crystal display device is set to 150 Hz.
while changing the frequency of the AC drive to an integer multiple or an integer fraction (for example, 30 Hz, 50 Hz,
Hz, 75 Hz, 150 Hz, etc.), it is possible to reduce flicker that appears due to AC drive to a level that is not perceived by the human eye.

Thus, by setting positive integers n and m differently, the conversion ratio can be set as any rational number (n/m). Although detailed explanation is omitted, in the range where n is 10 or less,
n=1, m=1, that is, the conversion ratio (n/m)=1 (single-speed drive, 60 Hz),
n=2, m=1, that is, the conversion ratio (n/m)=2 (double speed drive, 120 Hz),
n = 3, m = 1, that is, conversion ratio (n/m) = 3 (triple speed drive, 180 Hz),
n = 3, m = 2, that is, conversion ratio (n/m) = 3/2 (3/2 double speed drive, 90 Hz),
n = 4, m = 1, that is, conversion ratio (n/m) = 4 (4x speed drive, 240 Hz),
n = 4, m = 3, that is, conversion ratio (n/m) = 4/3 (4/3 double speed drive, 80 Hz),
n=5, m=1, that is, the conversion ratio (n/m)=5/1 (5-fold speed drive, 300 Hz),
n = 5, m = 2, that is, conversion ratio (n/m) = 5/2 (5/2 double speed drive, 150 Hz),
n = 5, m = 3, that is, conversion ratio (n/m) = 5/3 (5/3 double speed drive, 100 Hz),
n = 5, m = 4, that is, conversion ratio (n/m) = 5/4 (5/4 double speed drive, 75 Hz),
n = 6, m = 1, that is, conversion ratio (n/m) = 6 (six-speed drive, 360 Hz),
n = 6, m = 5, that is, conversion ratio (n/m) = 6/5 (6/5 double speed drive, 72 Hz),
n=7, m=1, that is, conversion ratio (n/m)=7 (seven times speed drive, 420 Hz),
n = 7, m = 2, that is, conversion ratio (n/m) = 7/2 (7/2 double speed drive, 210 Hz),
n = 7, m = 3, that is, conversion ratio (n/m) = 7/3 (7/3 double speed drive, 140 Hz),
n = 7, m = 4, that is, conversion ratio (n/m) = 7/4 (7/4 double speed drive, 105 Hz),
n = 7, m = 5, that is, conversion ratio (n/m) = 7/5 (7/5 double speed drive, 84 Hz),
n=7, m=6, that is, conversion ratio (n/m)=7/6 (7/6 double speed drive, 70 Hz),
n = 8, m = 1, that is, the conversion ratio (n/m) = 8 (8-fold speed drive, 480 Hz),
n = 8, m = 3, that is, conversion ratio (n/m) = 8/3 (8/3 double speed drive, 160 Hz),
n = 8, m = 5, that is, conversion ratio (n/m) = 8/5 (8/5 double speed drive, 96 Hz),
n=8, m=7, that is, conversion ratio (n/m)=8/7 (8/7 double speed drive, 68.6 Hz)
,
n = 9, m = 1, that is, conversion ratio (n/m) = 9 (9x speed drive, 540 Hz),
n = 9, m = 2, that is, conversion ratio (n/m) = 9/2 (9/2 double speed drive, 270 Hz),
n = 9, m = 4, that is, conversion ratio (n/m) = 9/4 (9/4 double speed drive, 135 Hz),
n = 9, m = 5, that is, conversion ratio (n/m) = 9/5 (9/5 double speed drive, 108 Hz),
n=9, m=7, that is, conversion ratio (n/m)=9/7 (9/7 double speed drive, 77.1 Hz)
,
n=9, m=8, ie conversion ratio (n/m)=9/8 (9/8 double speed drive, 67.5 Hz)
,
n = 10, m = 1, that is, conversion ratio (n/m) = 10 (10x speed drive, 600 Hz),
n=10, m=3, that is, conversion ratio (n/m)=10/3 (10/3 double speed drive, 200H
z),
n=10, m=7, ie conversion ratio (n/m)=10/7 (10/7 double speed drive, 85.7
Hz),
n=10, m=9, that is, the conversion ratio (n/m)=10/9 (10/9 double speed drive, 66.7
Hz),
Combinations of the above are conceivable. Note that the notation of frequency is an example when the input frame rate is 60 Hz, and for other input frame rates, the drive frequency is the value obtained by multiplying the input frame rate by the respective conversion ratio.

In the case where n is an integer greater than 10, specific numbers of n and m are not given, but the procedure of frame rate conversion in the first step can be applied to various n and m. is clear.

It should be noted that the conversion ratio can be determined depending on how much of the image to be displayed includes an image that can be displayed without performing motion compensation in the input image data. Specifically, the smaller m is, the greater the percentage of images that can be displayed without performing motion compensation on the input image data. If the frequency of motion compensation is low, the frequency of operation of the circuit that performs motion compensation can be reduced, so power consumption can be reduced. Since it is possible to reduce the possibility of creating an intermediate image that does not have an image, the quality of the image can be improved. As such conversion ratios, in the range where n is 10 or less, for example, 1, 2, 3, 3/2, 4,
5, 5/2, 6, 7, 7/2, 8, 9, 9/2, 10. Using such a conversion ratio makes it possible to improve image quality and reduce power consumption, particularly when intermediate images obtained by motion compensation are used as interpolated images. This is because when m is 2, the number of images that can be displayed without performing motion compensation on the input image data is relatively large (there are only 1/2 of the total number of input image data). ,
This is because the frequency of performing motion compensation decreases. Furthermore, when m is 1, the number of images that can be displayed without performing motion compensation on the input image data is large (equal to the total number of input image data), and motion compensation is not performed. be. On the other hand, the larger m is, the more the intermediate images created by highly accurate motion compensation can be used, so there is an advantage that the motion of the images can be made smoother.

If the display device is a liquid crystal display device, the conversion ratio can be determined according to the response time of the liquid crystal element. Here, the response time of the liquid crystal element is the time from when the voltage applied to the liquid crystal element is changed until the liquid crystal element responds. When the response time of the liquid crystal element varies depending on the amount of change in the voltage applied to the liquid crystal element, the average value of the response times in a plurality of representative voltage changes can be used. Alternatively, the response time of the liquid crystal element is MPRT (Movin
g Picture Response Time).
Then, the frame rate conversion can determine the conversion ratio so that the image display period becomes close to the response time of the liquid crystal element. Specifically, it is preferable that the response time of the liquid crystal element is the time from the sum of the cycle of the input image data and the reciprocal of the conversion ratio to about half of this value. By doing so, it is possible to set the image display cycle to match the response time of the liquid crystal element, so that the image quality can be improved. For example, when the response time of the liquid crystal element is 4 milliseconds or more and 8 milliseconds or less, double-speed driving (120 Hz driving) can be used. This is because the image display period of 120 Hz drive is approximately 8 milliseconds, and half of the image display period of 120 Hz drive is approximately 4 milliseconds. Similarly, for example, when the response time of the liquid crystal element is 3 milliseconds or more and 6 milliseconds or less, triple speed driving (180 Hz driving) can be performed, and the response time of the liquid crystal element is 5 milliseconds.
When the response time of the liquid crystal element is 2 milliseconds or more and 4 milliseconds or less, 4 times speed driving (240 Hz driving) can be used when the response time of the liquid crystal element is 2 milliseconds or more and 4 milliseconds or less. ), and when the response time of the liquid crystal element is 6 milliseconds or more and 12 milliseconds or less, 1
. A 25-fold speed drive (80 Hz drive) can be used. The same applies to other drive frequencies.

Note that the conversion ratio can also be determined by a trade-off between the quality of moving images, power consumption, and manufacturing cost. That is, by increasing the conversion ratio, the quality of moving images can be improved, while by decreasing the conversion ratio, power consumption and manufacturing costs can be reduced. That is, each conversion ratio in the range where n is 10 or less has the following advantages.

When the conversion ratio is 1, the quality of moving images can be improved more than when the conversion ratio is less than 1, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 1. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is approximately one time the period of the input image data.

When the conversion ratio is 2, the quality of moving images can be improved more than when the conversion ratio is less than 2, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 2. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about half the period of the input image data.

When the conversion ratio is 3, the quality of moving images can be improved more than when the conversion ratio is less than 3, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 3. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about ⅓ times the period of the input image data.

When the conversion ratio is 3/2, the quality of moving images can be improved more than when the conversion ratio is less than 3/2, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 3/2. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about ⅔ times the period of the input image data.

When the conversion ratio is 4, the quality of moving images can be improved more than when the conversion ratio is less than 4, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 4. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/4 times the period of the input image data.

When the conversion ratio is 4/3, the moving image quality can be improved more than when the conversion ratio is less than 4/3, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 4/3. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/4 times the cycle of the input image data.

When the conversion ratio is 5, the quality of moving images can be improved more than when the conversion ratio is less than 5, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 5. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about ⅕ times the cycle of the input image data.

When the conversion ratio is 5/2, the moving image quality can be improved more than when the conversion ratio is less than 5/2, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 5/2. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 2/5 times the cycle of the input image data.

When the conversion ratio is 5/3, the moving image quality can be improved more than when the conversion ratio is less than 5/3, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 5/3. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/5 times the cycle of the input image data.

When the conversion ratio is 5/4, the moving image quality can be improved more than when the conversion ratio is less than 5/4, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 5/4. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 4/5 times the period of the input image data.

When the conversion ratio is 6, the quality of moving images can be improved more than when the conversion ratio is less than 6, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is greater than 6. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/6 times the cycle of the input image data.

When the conversion ratio is 6/5, the quality of moving images can be improved more than when the conversion ratio is less than 6/5, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 6/5. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/6 times the cycle of the input image data.

When the conversion ratio is 7, the moving image quality can be improved more than when the conversion ratio is less than 7, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 7. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/7 times the cycle of the input image data.

When the conversion ratio is 7/2, the moving image quality can be improved more than when the conversion ratio is less than 7/2, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 7/2. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 2/7 times the period of the input image data.

When the conversion ratio is 7/3, the moving image quality can be improved more than when the conversion ratio is less than 7/3, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 7/3. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/7 times the cycle of the input image data.

When the conversion ratio is 7/4, it is possible to improve the quality of the moving image as compared to when the conversion ratio is less than 7/4, and it is possible to reduce power consumption and manufacturing cost as compared to when the conversion ratio is greater than 7/4. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 4/7 times the period of the input image data.

When the conversion ratio is 7/5, the moving image quality can be improved more than when the conversion ratio is less than 7/5, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 7/5. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/7 times the period of the input image data.

When the conversion ratio is 7/6, the moving image quality can be improved more than when the conversion ratio is less than 7/6, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 7/6. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 6/7 times the period of the input image data.

When the conversion ratio is 8, the quality of moving images can be improved more than when the conversion ratio is less than 8, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 8. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about ⅛ times the cycle of the input image data.

When the conversion ratio is 8/3, the moving image quality can be improved more than when the conversion ratio is less than 8/3, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 8/3. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/8 times the cycle of the input image data.

When the conversion ratio is 8/5, the moving image quality can be improved more than when the conversion ratio is less than 8/5, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 8/5. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 5/8 times the cycle of the input image data.

When the conversion ratio is 8/7, the moving image quality can be improved more than when the conversion ratio is less than 8/7, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 8/7. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 7/8 times the period of the input image data.

When the conversion ratio is 9, the moving image quality can be improved more than when the conversion ratio is less than 9, and power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 9. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/9 times the cycle of the input image data.

When the conversion ratio is 9/2, the moving image quality can be improved more than when the conversion ratio is less than 9/2, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 9/2. Furthermore, since m is small, power consumption can be reduced while obtaining high image quality. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 2/9 times the cycle of the input image data.

When the conversion ratio is 9/4, the moving image quality can be improved more than when the conversion ratio is less than 9/4, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 9/4. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 4/9 times the cycle of the input image data.

When the conversion ratio is 9/5, the moving image quality can be improved more than when the conversion ratio is less than 9/5, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 9/5. Furthermore, since m is large, the motion of the image can be made smoother. Further, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 5/9 times the period of the input image data.

When the conversion ratio is 9/7, the moving image quality can be improved more than when the conversion ratio is less than 9/7, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 9/7. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 7/9 times the cycle of the input image data.

When the conversion ratio is 9/8, the moving image quality can be improved more than when the conversion ratio is less than 9/8, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 9/8. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 8/9 times the cycle of the input image data.

When the conversion ratio is 10, the video quality can be improved more than when the conversion ratio is less than 10,
Power consumption and manufacturing costs can be reduced compared to when the conversion ratio is greater than 10. Furthermore, m
is small, so power consumption can be reduced while obtaining high image quality. Furthermore, by applying the present invention to a liquid crystal display device in which the response time of the liquid crystal element is about 1/10 times the cycle of the input image data,
Image quality can be improved.

When the conversion ratio is 10/3, the quality of moving images can be improved more than when the conversion ratio is less than 10/3, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 10/3. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 3/10 times the cycle of the input image data.

When the conversion ratio is 10/7, the quality of moving images can be improved more than when the conversion ratio is less than 10/7, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 10/7. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 7/10 times the cycle of the input image data.

When the conversion ratio is 10/9, the quality of moving images can be improved more than when the conversion ratio is less than 10/9, and the power consumption and manufacturing cost can be reduced more than when the conversion ratio is more than 10/9. Furthermore, since m is large, the motion of the image can be made smoother. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 9/10 times the cycle of the input image data.

It is clear that each conversion ratio in the range where n is greater than 10 also has similar advantages.

Next, as a second step, an image according to the input image data or each image whose frame rate has been converted to an arbitrary rational number (n/m) times in the first step (referred to as an original image) ) to create a plurality of different images (sub-images) and present the plurality of sub-images continuously in time. By doing so, it is possible to make the human eye perceive that one original image is displayed, even though a plurality of images are actually presented.

Here, among the sub-images created from one original image, the sub-image displayed first is called the first sub-image. Here, it is assumed that the timing for displaying the first sub-image is the same as the timing for displaying the original image determined in the first step. on the other hand,
A sub-image displayed after that is called a second sub-image. The timing of displaying the second sub-image can be determined arbitrarily regardless of the timing of displaying the original image determined in the first step. Note that the image to be actually displayed is the image created from the original image by the method in the second step. Various images can be used as the original image for creating the sub-image. Note that the number of sub-images is not limited to two, and may be greater than two. In the second step, the number of sub-images is denoted as J (J is an integer equal to or greater than 2). At this time, the sub-image displayed at the same timing as the timing for displaying the original image determined in the first step is called the first sub-image, and the sub-images displayed after that are called the displayed sub-images. The second sub-image, the third sub-image, . . .
, J-th sub-image.

There are various methods for creating a plurality of sub-images from one original image, but the main methods are as follows. One method is to use the original image as it is as a sub-image. One is a method of distributing the brightness of the original image to a plurality of sub-images. One method is to use an intermediate image obtained by motion compensation as a sub-image.

Here, the method of distributing the brightness of the original image to a plurality of sub-images can be further divided into a plurality of methods. Main methods include the following methods. One is a method of making at least one sub-image a black image (referred to as a black insertion method). One is
When the brightness of the original image is divided into a plurality of ranges and the brightness in each range is controlled, only one sub-image out of all the sub-images is used (referred to as the time-division gradation control method). ). One sub-image is a bright image obtained by changing the gamma value of the original image, and the other sub-image is a dark image obtained by changing the gamma value of the original image (referred to as a gamma interpolation method). ).

A brief description of each of the above methods is provided. In the method of using the original image as it is as the sub-image, the original image is used as it is as the first sub-image. Furthermore, the original image is used as it is as the second sub-image. By using this method, it is possible to reduce power consumption and manufacturing costs because there is no need to operate a circuit for creating a new sub-image or to use the circuit itself. In particular, in the liquid crystal display device, the first
It is preferable to use this method after performing frame rate conversion using the intermediate image obtained by motion compensation as an interpolated image in step 2). This is because, by using intermediate images obtained by motion compensation as interpolated images, the same image is repeatedly displayed while smoothing the motion of the moving image, thereby reducing the amount of moving image caused by insufficient writing voltage due to the dynamic capacitance of the liquid crystal element. This is because obstacles such as trailing and afterimages can be reduced.

Next, a method for setting the brightness of the image and the length of the period during which the sub-images are displayed in the method of distributing the brightness of the original image to a plurality of sub-images will be described in detail. Note that J represents the number of sub-images and is an integer of 2 or more. A lowercase j is distinguished from an uppercase J. Assume that j is an integer of 1 or more and J or less.
L is the pixel brightness in normal hold driving, T is the period of the original image data,
Let L _j be the brightness of the pixel in the j- _th sub-image, and T _j be the length of the period during which the j-th sub-image is displayed _. sum up to j = J (L
_1T1 + _L2T2 +...+ _LJTJ ) is preferably equal to _the product of L and T (LT ₎ (the brightness _remains unchanged). Furthermore, the sum of T _j from j=1 to j=J (T ₁ +T ₂ + . . . +T _J ) is equal to T (the display cycle of the original image is maintained). preferable. Here, the fact that the brightness is unchanged and that the display cycle of the original image is maintained is called a sub-image distribution condition.

Among the methods of distributing the brightness of the original image to a plurality of sub-images, the black insertion method is a method of making at least one sub-image a black image. By doing so, the display method can be a pseudo-impulse type, so that it is possible to prevent the quality of moving images from being degraded due to the display method being of the hold type. Here, it is preferable to comply with the sub-image distribution condition in order to prevent the brightness of the displayed image from decreasing due to the insertion of the black image. However, if the situation is such that a decrease in the brightness of the displayed image is acceptable (dark surroundings, etc.), or if the user has set the brightness of the displayed image to be acceptable, the sub-image Not subject to distribution conditions. For example, one sub-image may be the same as the original image, and the other sub-image may be a black image. In this case, power consumption can be reduced compared to when sub-image distribution conditions are followed. Furthermore, in the liquid crystal display device, when one of the sub-images is made by increasing the overall brightness of the original image without limiting the maximum brightness, the brightness of the backlight can be increased. , the sub-image distribution condition may be realized. In this case, the sub-image distribution condition can be satisfied without controlling the voltage value written to the pixels, so the operation of the image processing circuit can be omitted, and power consumption can be reduced.

The black insertion method is characterized by setting _Lj of all pixels to 0 in any one sub-image. By doing so, the display method can be a pseudo-impulse type, so that it is possible to prevent the deterioration of the moving image quality caused by the hold type display method.

Among the methods of distributing the brightness of the original image to a plurality of sub-images, the time-division gradation control method divides the brightness of the original image into a plurality of ranges, and controls the brightness in each range. This is a method using only one sub-image among the sub-images of . By doing so, the display method can be pseudo-impulse type without lowering the brightness, so that it is possible to prevent the quality of moving images from deteriorating due to the hold type display method.

As a method of dividing the brightness of the original image into a plurality of ranges, the maximum value of brightness (L _max ) is
There is a method of dividing by the number of sub-images. For example, in a display device that can adjust brightness from 0 to L _max in 256 steps (gradation 0 to gradation 255), if the number of sub-images is 2, gradation 0 to gradation 127 is displayed, the brightness of one sub-image is adjusted in the range of gradation 0 to 255, while the brightness of the other sub-image is set to gradation 0,
When displaying gradation 128 to gradation 255, the brightness of one of the sub-images is set to gradation 255.
On the other hand, this method adjusts the brightness of the other sub-image within the range of 0 to 255 gradations. By doing this, the human eye can perceive the image as if the original image was displayed, and the image can be simulated to be of the impulse type. can be prevented. Note that the number of sub-images may be greater than two. For example, if the number of sub-images is 3, the brightness level of the original image (gradation 0 to gradation 2)
55) is divided into three. Depending on the number of brightness levels in the original image and the number of sub-images, the number of brightness levels may not be divisible by the number of sub-images. Even if the number of brightness levels is not exactly the same, it may be distributed as appropriate.

It should be noted that the time-division gradation control method is also preferable because an image similar to the original image can be displayed without a decrease in brightness by satisfying the sub-image distribution condition.

Among methods for distributing the brightness of an original image to multiple sub-images, the gamma interpolation method makes one of the sub-images a brighter image obtained by changing the gamma characteristics of the original image, and converts the other sub-image to the gamma of the original image. This is a method of making a dark image with changed characteristics. By doing so, the display method can be pseudo-impulse type without lowering the brightness, so that it is possible to prevent the quality of moving images from deteriorating due to the hold type display method. Here, the gamma characteristic is the degree of brightness with respect to the level of brightness (gradation). Normally, the gamma characteristic is adjusted so as to be close to linear. This is because a smooth gradation can be obtained by making the change in brightness proportional to the gradation, which is the level of brightness. In the gamma interpolation method, the gamma characteristic of one of the sub-images is deviated from linear and adjusted so that it becomes brighter than linear in the intermediate brightness (halftone) area (an image in which the halftone is brighter than it should be). )
. Then, the gamma characteristic of the other sub-image is also deviated from linear, and similarly adjusted so that the halftone region becomes darker than linear (the halftone is darker than it should be). where the amount by which one sub-image is made brighter than linear and the amount by which the other sub-image is made darker than linear is
It is preferable to make all gradations substantially equal. By doing so, it is possible to perceive to the human eye as if the original image was displayed, and it is possible to prevent the quality of the moving image from deteriorating due to the hold type. Note that the number of sub-images may be greater than two. For example, if the number of sub-images is 3, adjust the gamma characteristics of each of the 3 sub-images so that the sum of the amount of lightening from linear and the sum of the amount of darkening from linear are approximately equal. good.

It should be noted that even in the gamma interpolation method, if the sub-image distribution condition is satisfied, an image similar to the original image can be displayed without a decrease in brightness, which is preferable. moreover,
In the gamma interpolation method, since the change in the brightness _Lj of each sub-image with respect to the gradation follows the gamma curve, each sub-image by itself can display the gradation smoothly.
This has the advantage that the final image quality perceived by the human eye is also improved.

A method of using an intermediate image obtained by motion compensation as a sub-image is a method in which one of the sub-images is an intermediate image obtained by motion compensation from the previous and subsequent images. By doing so, the motion of the image can be smoothed, so the quality of the moving image can be improved.

Next, the relationship between the timing of displaying the sub-image and the method of creating the sub-image will be described. The timing of displaying the first sub-image is the same as the timing of displaying the original image determined in the first step, and the timing of displaying the second sub-image is the same as the timing of displaying the original image determined in the first step. Although it is possible to arbitrarily determine the timing of displaying the image, the sub-image itself may be changed according to the timing of displaying the second sub-image. By doing so, even if the timing of displaying the second sub-image is changed in various ways, it is possible for the human eye to perceive the original image as if it had been displayed. Specifically, when the timing for displaying the second sub-image is advanced, the first sub-image is made brighter and the second sub-image is made brighter.
can be made darker. Furthermore, if the timing for displaying the second sub-image is delayed, the first sub-image can be made darker and the second sub-image can be made brighter. This is because the brightness perceived by the human eye varies depending on the length of the image display period. More specifically, the brightness perceived by the human eye becomes brighter as the image display period becomes longer, and becomes darker as the image display period becomes shorter. That is, by advancing the timing of displaying the second sub-image, the length of the period of displaying the first sub-image is shortened and the length of the period of displaying the second sub-image is lengthened. As they are, the first sub-image is dark and the second sub-image is bright, which are perceived by the human eye. As a result, an image different from the original image will be perceived by the human eye.
can be made lighter and the second sub-image darker. Similarly, the second
By delaying the timing of displaying the sub-image of , the length of the period of displaying the first sub-image becomes longer, and the length of the period of displaying the second sub-image becomes shorter. A sub-image can be darker and a second sub-image can be lighter.

Based on the above description, the processing procedure in the second step is shown below.
As procedure 1, a method for creating a plurality of sub-images from one original image is determined. More specifically, the method of creating a plurality of sub-images includes a method of using the original image as it is as a sub-image, a method of distributing the brightness of the original image to a plurality of sub-images, and a method of converting an intermediate image obtained by motion compensation into a sub-image. can be selected from the method used as
As procedure 2, the number J of sub-images is determined. Note that J is an integer of 2 or more.
As step 3, the pixel brightness L _j in the j th sub-image and the length of time T _j during which the j th sub-image is displayed are determined according to the method selected in step 1 . By procedure 3, the length of the period during which each sub-image is displayed and the brightness of each pixel included in each sub-image are specifically determined.
As step 4, the original image is processed and actually displayed according to the items determined in steps 1 to 3 respectively.
In step 5, the target original image is moved to the next original image. Then, return to step 1.

Note that the mechanism for executing the procedure in the second step may be implemented in the device, or may be determined in advance at the design stage of the device. If the device is equipped with a mechanism for executing the procedure in the second step, it becomes possible to switch the driving method so that the optimum operation according to the situation is performed. The conditions here refer to the content of the image data, the environment inside and outside the device (temperature, humidity, air pressure, light, sound, magnetic field, electric field, radiation dose,
altitude, acceleration, movement speed, etc.), user settings, software version, etc. On the other hand, if the mechanism for executing the procedure in the second step is determined in advance at the design stage of the device, the optimum driving circuit can be used for each driving method, and the mechanism is determined. As a result, a reduction in manufacturing costs can be expected due to the effect of mass production.

Next, various driving methods determined by the procedure in the second step will be described in detail by specifically showing the values of n and m in the first step, respectively.

When the method of using the original image as the sub-image as it is is selected in procedure 1 of the second step, the driving method is as follows.

i-th (i is a positive integer) image data;
and the i+1th image data are sequentially prepared at a constant cycle T,
The period T is divided into J (J is an integer equal to or greater than 2) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L,
The j-th (j is an integer of 1 or more and J or less) sub-image is formed by juxtaposing a plurality of pixels each having a unique brightness _Lj , and is displayed for _the j-th sub-image display period Tj. is an image,
A method of driving a display device that satisfies sub-image distribution conditions for the L, the T, the L _j , and the T _{j ,} comprising:
For all j, the brightness L _j of each pixel contained in the j-th sub-image is characterized by L _j =L for each pixel.
Here, the original image data created in the first step can be used as the image data that is sequentially prepared at the constant cycle T. FIG. That is, all the display patterns mentioned in the explanation of the first step can be combined with the driving method described above.

Then, when the number of sub-images J is determined to be 2 in procedure 2 of the second step and T ₁ =T ₂ =T/2 in procedure 3, the driving method is shown in FIG. It will be something like
In FIG. 69, the horizontal axis represents time, and the vertical axis represents cases of various n and m used in the first step.

For example, in the first step, when n=1, m=1, that is, when the conversion ratio (n/m) is 1, the driving method shown at n=1, m=1 in FIG. Become. At this time, the display frame rate is twice the frame rate of the input image data (double speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 120 Hz (120 Hz drive). Then, an image is displayed twice in succession for one piece of input image data. Here, in the case of double-speed drive, the quality of moving images can be improved more than when the frame rate is less than double speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is greater than double speed. Furthermore, in procedure 1 of the second step,
By selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device, so the power consumption and the manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is also effective to combine AC driving and 120 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 120 Hz, the frequency of the AC drive is set to an integer multiple or an integer fraction (for example, 30 Hz, 60 Hz).
, 120 Hz, 240 Hz, etc.), it is possible to reduce the flicker that appears due to AC driving to a level that is not perceived by the human eye. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about half the cycle of the input image data.

Further, for example, in the first step n=2, m=1, i.e. the conversion ratio (n/m
) is 2, the drive method shown at n=2, m=1 in FIG. 69 is used. At this time, the display frame rate is four times the frame rate of the input image data (quadruple speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 240 Hz (240 Hz drive). Then, an image is displayed four times in succession for one input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Here, in the case of quadruple-speed drive, the quality of moving images can be improved more than when the frame rate is less than quadruple speed, and the power consumption and manufacturing cost can be reduced more than when the frame rate is greater than quadruple speed. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the apparatus. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of lack of write voltage due to dynamic capacitance can be avoided, a remarkable image quality improvement effect can be brought about, especially against obstacles such as trailing of moving images and afterimages. Furthermore, it is effective to combine the AC drive and the 240 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 240 Hz, the frequency of the AC drive is set to an integral multiple or a fraction of that (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.). It can be reduced to the extent that it is imperceptible to the human eye. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 1/4 times the period of the input image data.

Further, for example, in the first step n=3, m=1, i.e. the transformation ratio (n/m
) is 3, the drive method shown at n=3, m=1 in FIG. 69 is used. At this time, the display frame rate is six times the frame rate of the input image data (sixfold speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 360 Hz (360 Hz drive). Then, an image is displayed continuously six times for one input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Here, in the case of 6× speed driving, the quality of moving images can be improved more than when the frame rate is lower than 6× speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is higher than 6× speed. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of lack of write voltage due to dynamic capacitance can be avoided, a remarkable image quality improvement effect can be brought about, especially against obstacles such as trailing of moving images and afterimages. Furthermore, it is effective to combine the AC driving and the 360 Hz driving of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 360 Hz and setting the frequency of the AC drive to an integer multiple or a fraction of that (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.), the flicker caused by the AC drive is It can be reduced to the extent that it is imperceptible to the human eye. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/6 times the period of the input image data.

Further, for example, in the first step n=3, m=2, i.e. the conversion ratio (n/m
) is 3/2, the drive method shown at n=3, m=2 in FIG. 69 is used.
At this time, the display frame rate is three times the frame rate of the input image data (triple speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 180 Hz (180 Hz drive). Then, an image is displayed three times in succession for one piece of input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. where 3
In the case of double-speed drive, the quality of moving images can be improved more than when the frame rate is less than triple speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is more than triple speed. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is also effective to combine AC driving and 180 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 180 Hz, the frequency of the AC drive is set to an integer multiple or a fraction of that (for example, 30 Hz, 60 Hz, 120 Hz, 180 Hz, etc.). It can be reduced to the extent that it is imperceptible to the human eye. Further, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about ⅓ times the period of the input image data.

Further, for example, in the first step n=4, m=1, i.e. the conversion ratio (n/m
) is 4, the drive method shown at n=4, m=1 in FIG. 69 is used. At this time, the display frame rate is eight times the frame rate of the input image data (8-fold speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 480 Hz (480 Hz drive). Then, an image is displayed eight times consecutively for one input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Here, in the case of 8× speed driving, the quality of moving images can be improved more than when the frame rate is less than 8× speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is more than 8× speed. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix liquid crystal display device,
Since the problem of lack of write voltage due to dynamic capacitance can be avoided, a remarkable image quality improvement effect can be brought about, especially against obstacles such as trailing of moving images and afterimages. Furthermore, it is effective to combine the AC drive and the 480 Hz drive of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 480 Hz, by setting the frequency of the AC drive to an integer multiple or a fraction of that (for example, 30 Hz, 60 Hz, 120 Hz, 240 Hz, etc.), the flicker caused by the AC drive is It can be reduced to the extent that it is imperceptible to the human eye. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about ⅛ times the cycle of the input image data.

Further, for example, in the first step n=4, m=3, i.e. the conversion ratio (n/m
) is 4/3, the drive method shown at n=4 and m=3 in FIG. 69 is used.
At this time, the display frame rate is 8/3 times (8
/3 times speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 160 Hz (160 Hz drive). Then, an image is displayed eight times in succession with respect to three pieces of input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Here, in the case of 8/3 times speed driving, the quality of moving images can be improved more than when the frame rate is less than 8/3 times speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is more than 8/3 times speed. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages.
Furthermore, it is also effective to combine AC driving and 160 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 160 Hz, the frequency of the AC drive is set to an integer multiple or a fraction of that (for example, 40 Hz, 80 Hz, 160 Hz, 320 Hz, etc.). It can be reduced to the extent that it is imperceptible to the human eye. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about 3/8 times the cycle of the input image data.

Further, for example, in the first step n=5, m=1, i.e. the conversion ratio (n/m
) is 5, the drive method shown at n=5 and m=1 in FIG. At this time, the display frame rate is 10 times the frame rate of the input image data (10-fold speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 600 Hz (600 Hz drive). Then, an image is displayed ten times in succession for one input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. here,
In the case of 10x speed drive, the quality of moving images can be improved more than when the frame rate is less than 10x speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is more than 10x speed. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is effective to combine the AC driving and the 600 Hz driving of the liquid crystal display device. That is, by setting the drive frequency of the liquid crystal display device to 600 Hz and setting the frequency of the AC drive to an integer multiple or a fraction of that (for example, 30 Hz, 60 Hz, 100 Hz, 120 Hz, etc.), the flicker caused by the AC drive is reduced to It can be reduced to the extent that it is imperceptible to the human eye. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about 1/10 times the cycle of the input image data.

Further, for example, in the first step n=5, m=2, i.e. the transformation ratio (n/m
) is 5/2, the drive method shown at n=5 and m=2 in FIG. 69 is used.
At this time, the display frame rate is five times the frame rate of the input image data (five times speed drive). Specifically, for example, if the input frame rate is 60 Hz, the display frame rate is 300 Hz (300 Hz drive). Then, an image is displayed five times in succession for one input image data. At this time, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Here, in the case of quintuple-speed drive, the quality of moving images can be improved more than when the frame rate is less than quintuple speed, and power consumption and manufacturing cost can be reduced more than when the frame rate is more than quintuple speed. Furthermore, the second
By selecting the method of using the original image as a sub-image as it is in step 1 of step 1, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Power consumption and device manufacturing costs can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, it is also effective to combine AC driving and 300 Hz driving of the liquid crystal display device. That is, while setting the drive frequency of the liquid crystal display device to 300 Hz, the frequency of the AC drive is set to an integer multiple or an integral fraction of the 300 Hz.
For example, by setting it to 30 Hz, 50 Hz, 60 Hz, 100 Hz, etc.), it is possible to reduce flicker that appears due to AC driving to a level that is not perceived by human eyes. Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about ⅕ times the cycle of the input image data.

Thus, in procedure 1 of the second step, a method of using the original image as it is as a sub-image is selected,
In procedure 2 in the second step, the number of sub-images is determined to be 2,
In procedure 3 in the second step, if it is determined that T1=T2=T/2, the first
Since the display frame rate can be further doubled with respect to the frame rate conversion at the conversion ratio determined by the values of n and m in step 2, the quality of moving images can be further improved. Furthermore, it is possible to improve the quality of the moving image as compared with the display frame rate lower than the display frame rate, and reduce power consumption and manufacturing cost as compared with the display frame rate higher than the display frame rate.
Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. moreover,
By increasing the drive frequency of the liquid crystal display device and setting the frequency of the AC drive to an integer multiple or a fraction of that, the flicker that appears due to the AC drive can be reduced to a level that is not perceptible to the human eye. Furthermore, the response time of the liquid crystal element (
Image quality can be improved by applying it to a liquid crystal display device having a conversion ratio of about 1/(twice the conversion ratio).

Although detailed explanation is omitted, it is clear that similar advantages are obtained even in cases other than the conversion ratios mentioned above. For example, in the range where n is 10 or less, in addition to the above,
n=5, m=3, that is, conversion ratio (n/m)=5/3 (10/3 double speed drive, 200 Hz)
,
n = 5, m = 4, that is, conversion ratio (n/m) = 5/4 (5/2 double speed drive, 150 Hz),
n = 6, m = 1, that is, conversion ratio (n/m) = 6 (12x speed drive, 720 Hz),
n=6, m=5, that is, conversion ratio (n/m)=6/5 (12/5 double speed drive, 144 Hz)
,
n=7, m=1, that is, conversion ratio (n/m)=7 (14x speed drive, 840 Hz),
n = 7, m = 2, that is, conversion ratio (n/m) = 7/2 (seven times speed drive, 420 Hz),
n=7, m=3, that is, conversion ratio (n/m)=7/3 (14/3 double speed drive, 280 Hz)
,
n=7, m=4, that is, conversion ratio (n/m)=7/4 (7/2 double speed drive, 210 Hz),
n=7, m=5, that is, conversion ratio (n/m)=7/5 (14/5 double speed drive, 168 Hz)
,
n=7, m=6, that is, conversion ratio (n/m)=7/6 (7/3 double speed drive, 140 Hz),
n = 8, m = 1, that is, conversion ratio (n/m) = 8 (16x speed drive, 960 Hz),
n=8, m=3, that is, conversion ratio (n/m)=8/3 (16/3 double speed drive, 320 Hz)
,
n=8, m=5, that is, conversion ratio (n/m)=8/5 (16/5 double speed drive, 192 Hz)
,
n=8, m=7, that is, conversion ratio (n/m)=8/7 (16/7 double speed drive, 137 Hz)
,
n = 9, m = 1, that is, conversion ratio (n/m) = 9 (18x speed drive, 1080 Hz),
n=9, m=2, that is, the conversion ratio (n/m)=9/2 (9-fold speed drive, 540 Hz),
n = 9, m = 4, that is, conversion ratio (n/m) = 9/4 (9/2 double speed drive, 270 Hz),
n=9, m=5, that is, conversion ratio (n/m)=9/5 (18/5 double speed drive, 216 Hz)
,
n=9, m=7, that is, conversion ratio (n/m)=9/7 (18/7 double speed drive, 154 Hz)
,
n = 9, m = 8, that is, conversion ratio (n/m) = 9/8 (9/4 double speed drive, 135 Hz),
n=10, m=1, that is, conversion ratio (n/m)=10 (20x speed drive, 1200 Hz),
n=10, m=3, that is, conversion ratio (n/m)=10/3 (20/3 double speed drive, 400H
z),
n=10, m=7, that is, conversion ratio (n/m)=10/7 (20/7 double speed drive, 171H
z),
n=10, m=9, that is, the conversion ratio (n/m)=10/9 (20/9 double speed drive, 133H
z),
Combinations of the above are conceivable. Note that the notation of frequency is an example when the input frame rate is 60 Hz, and for other input frame rates, the value obtained by multiplying the input frame rate by twice the respective conversion ratio becomes the drive frequency.

In addition, when n is an integer greater than 10, specific numbers of n and m are not given, but it is clear that the procedure in the second step can be applied to various n and m. .

If J=2, it is particularly effective if the conversion ratio in the first step is greater than 2. This is because if the number of sub-images is relatively small, such as J=2, in the second step, the conversion ratio in the first step can be increased accordingly. Such conversion ratios are 3, 4, 5, 5/2, 6, 7
, 7/2, 7/3, 8, 8/3, 9, 9/2, 9/4, 10, 10/3.
When the display frame rate after the first step is such a value, by setting J=3 or more, there are advantages due to the small number of sub-images in the second step (reduction of power consumption and manufacturing cost, etc.). , and the advantages (improvement in moving image quality, reduction in flicker, etc.) due to a large final display frame rate can be achieved at the same time.

Here, the number J of sub-images is determined to be 2 in procedure 2, and T ₁ =
Although the case where it is determined that T ₂ =T/2 has been described, it is clearly not limited to this.

For example, if in procedure 3 in the second step it was determined that T ₁ <T ₂ , then the first sub-image can be made brighter and the second sub-image can be made darker. Furthermore, the second
In step 3, if it is determined that T ₁ >T ₂ , then the first sub-image can be made darker and the second sub-image can be made lighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of moving images can be improved. However, if the method of using the original image as the sub-image as it is is selected in step 1 as in the driving method described above, the sub-image may be displayed as it is without changing the brightness of the sub-image. This is because the same image is used as the sub-image in this case, so the original image can be properly displayed regardless of the display timing of the sub-image.

Furthermore, it is clear that in procedure 2 the number of sub-images J may be determined to be other values than two. In this case, the display frame rate can be further J times higher than the frame rate conversion with the conversion ratio determined by the values of n and m in the first step, so that the quality of the moving image can be further improved. becomes possible. Furthermore, it is possible to improve the quality of the moving image as compared with the display frame rate lower than the display frame rate, and reduce power consumption and manufacturing cost as compared with the display frame rate higher than the display frame rate. Furthermore, in the procedure 1 of the second step, by selecting the method of using the original image as a sub-image as it is, the operation of the circuit that creates the intermediate image by motion compensation can be stopped or the circuit itself can be omitted from the device. Therefore, power consumption and manufacturing cost of the device can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, by increasing the drive frequency of the liquid crystal display device and setting the frequency of the AC drive to an integral multiple or to a fraction of that, it is possible to reduce the flicker caused by the AC drive to a level not perceptible to the human eye. can. Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1/(J times the conversion ratio)) times the cycle of the input image data.

For example, when J=3, in particular, the video quality can be improved more than when the number of sub-images is less than 3, and the power consumption and manufacturing cost can be reduced more than when the number of sub-images is more than 3. have advantages. Furthermore, the response time of the liquid crystal element is (1
The image quality can be improved by applying it to a liquid crystal display device having a conversion ratio of about /(three times the conversion ratio)).

In addition, for example, J=4, in particular, can improve the quality of the video than if the number of sub-images is less than 4, and lower power consumption and manufacturing costs than if the number of sub-images is greater than 4. have the advantage of being able to Furthermore, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is approximately (1/(4 times the conversion ratio)) times the cycle of the input image data.

In addition, for example, J=5 can result in better video quality, especially when the number of sub-images is less than 5, and lower power consumption and manufacturing costs than when the number of sub-images is greater than 5. have the advantage of being able to Furthermore, the image quality can be improved by applying it to a liquid crystal display device in which the response time of the liquid crystal element is about (1/(five times the conversion ratio)) times the period of the input image data.

Moreover, J other than those listed above have similar advantages.

When J=3 or more, the conversion ratio in the first step can take various values. Especially when the conversion ratio in the first step is relatively small (2 or less), J= 3
The above is effective. This is because if the display frame rate after the first step is relatively low, J can be increased accordingly in the second step. Such conversion ratios are 1, 2, 3/2, 4/3,
5/3, 5/4, 6/5, 7/4, 7/5, 7/6, 8/7, 9/5, 9/7, 9/8,
10/7 and 10/9. Among them, the conversion ratios are 1, 2, 3/2, 4/3, 5/
The case of 3,5/4 is illustrated in FIG. In this way, when the display frame rate after the first step is a relatively small value, by setting J=3 or more, the advantage of the small display frame rate in the first step (reduction of power consumption and manufacturing cost) is achieved. reduction, etc.) and the advantages of a large final display frame rate (improvement in moving image quality, reduction in flicker, etc.).

Another example of the driving method determined by the procedure in the second step will now be described.

In procedure 1 of the second step, when the black insertion method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images, the driving method is as follows.

i-th (i is a positive integer) image data;
and the i+1th image data are sequentially prepared at a constant cycle T,
The period T is divided into J (J is an integer equal to or greater than 2) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L,
The j-th sub-image (j is an integer of 1 or more and J or less) is constructed by juxtaposing a plurality of pixels each having a unique brightness _Lj , and is displayed for the j-th sub-image display period _Tj . is an image,
A method of driving a display device that satisfies sub-image distribution conditions for the L, the T, the L _j , and the T _{j ,} comprising:
In at least one j, the brightness L _j of all pixels contained in the j-th sub-image is L _j
=0.
Here, the original image data created in the first step can be used as the image data sequentially prepared at the constant cycle T. FIG. That is, all the display patterns mentioned in the explanation of the first step can be combined with the above driving method.

It is clear that the above driving method can be implemented in combination with various n and m used in the first step.

Then, when the number of sub-images J is determined to be 2 in procedure 2 of the second step and T ₁ =T ₂ =T/2 in procedure 3, the driving method is shown in FIG. It will be something like
Since the features and advantages of the driving method shown in FIG. 69 (display timing for various n and m) have already been described, detailed description is omitted here. Of the methods for distributing the .sub.s into a plurality of sub-images, it is clear that the black insertion method has similar advantages. For example, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is high, the quality of moving images can be improved, and when the display frame rate is low, power consumption and manufacturing costs can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye.

Among the methods for distributing the brightness of the original image to a plurality of sub-images in procedure 1 of the second step, a characteristic advantage of selecting the black insertion method is that an intermediate image is created by motion compensation. Since the operation of the circuit can be stopped or the circuit itself can be omitted from the device,
It is possible to reduce the power consumption and the manufacturing cost of the device. Furthermore, since a pseudo-impulse-type display method can be used regardless of the gradation values included in the image data, the quality of moving images can be improved.

Here, the number J of sub-images is determined to be 2 in procedure 2, and T ₁ =
Although the case where it is determined that T ₂ =T/2 has been described, it is clearly not limited to this.

For example, if in procedure 3 in the second step it was determined that T ₁ <T ₂ , then the first sub-image can be made brighter and the second sub-image can be made darker. Furthermore, the second
In step 3, if it is determined that T ₁ >T ₂ , then the first sub-image can be made darker and the second sub-image can be made lighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of moving images can be improved. However, as in the above driving method, if the black insertion method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images in step 1, the brightness of the sub-images is not changed. can be displayed as is. because,
This is because, in this case, if the brightness of the sub-image is not changed, the overall brightness of the original image will be darkened and displayed. That is, by positively using this method for controlling the brightness of the display device, it becomes possible to control the brightness while improving the quality of moving images.

Furthermore, it is clear that in procedure 2 the number of sub-images J may be determined to be other values than two. Since the advantages in this case have already been described, a detailed explanation is omitted here. It is clear that the selected case has similar advantages. For example, the response time of the liquid crystal element is the period of the input image data (1/(J times the conversion ratio)
), the image quality can be improved by applying it to a liquid crystal display device which is approximately twice as large.

Next, another example of the driving method determined by the procedure in the second step will be described.

In procedure 1 of the second step, when the time-division gradation control method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images, the driving method is as follows.

i-th (i is a positive integer) image data;
and the i+1th image data are sequentially prepared at a constant cycle T,
The period T is divided into J (J is an integer equal to or greater than 2) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L,
The intrinsic brightness L has a maximum value of L _max ,
The j-th sub-image (j is an integer of 1 or more and J or less) is constructed by juxtaposing a plurality of pixels each having a unique brightness _Lj , and is displayed for the j-th sub-image display period _Tj . is an image,
A method of driving a display device that satisfies sub-image distribution conditions for the L, the T, the L _j , and the T _{j ,} comprising:
In displaying the inherent brightness L, (j−1)×L _max /J to J×L _max
The brightness adjustment in the brightness range of /J is performed by adjusting the brightness in only one sub-image display period among the J sub-image display periods.
Here, the original image data created in the first step can be used as the image data sequentially prepared at the constant cycle T. FIG. That is, all the display patterns mentioned in the explanation of the first step can be combined with the above driving method.

It is obvious that the driving method described above can be implemented in combination with various n and m used in the first step.

Then, when the number of sub-images J is determined to be 2 in procedure 2 of the second step and T ₁ =T ₂ =T/2 in procedure 3, the driving method is shown in FIG. It will be something like
Since the features and advantages of the driving method shown in FIG. 69 (display timing for various n and m) have already been described, detailed description is omitted here. It is clear that the same advantages are obtained when the time-division gradation control method is selected among the methods of distributing the .times..times..times..times. For example, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is high, the quality of moving images can be improved, and when the display frame rate is low, power consumption and manufacturing costs can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, flicker that appears due to AC driving can be reduced to a level that is not perceived by the human eye.

In procedure 1 of the second step, among the methods for distributing the brightness of the original image to a plurality of sub-images, a characteristic advantage of selecting the time-division gradation control method is that the intermediate image is can be stopped or the circuit itself can be omitted from the device, so that the power consumption and the manufacturing cost of the device can be reduced. moreover,
Since a pseudo-impulse-type display method can be used, the quality of moving images can be improved, and the brightness of the display device does not decrease, so power consumption can be further reduced.

Here, the number J of sub-images is determined to be 2 in procedure 2, and T ₁ =
Although the case where it is determined that T ₂ =T/2 has been described, it is clearly not limited to this.

For example, if in procedure 3 in the second step it was determined that T ₁ <T ₂ , then the first sub-image can be made brighter and the second sub-image can be made darker. Furthermore, the second
If it is determined in procedure 3 in step 2 that T ₁ >T ₂ , then the first sub-image can be made darker and the second sub-image can be made lighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, thereby improving the quality of moving images. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, thereby improving the quality of moving images.

Furthermore, it is clear that in procedure 2 the number of sub-images J may be determined to be other values than two. Since the advantages of this case have already been described, a detailed explanation is omitted here. Clearly, the control strategy chosen has similar advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about (1/(J times the conversion ratio)) times the cycle of the input image data.

Another example of the driving method determined by the procedure in the second step will now be described.

In procedure 1 of the second step, when the gamma interpolation method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images, the driving method is as follows.

i-th (i is a positive integer) image data;
and the i+1th image data are sequentially prepared at a constant cycle T,
The period T is divided into J (J is an integer equal to or greater than 2) sub-image display periods,
The i-th image data is data that allows each of a plurality of pixels to have a unique brightness L,
The j-th (j is an integer of 1 or more and J or less) sub-image is formed by juxtaposing a plurality of pixels each having a unique brightness _Lj , and is displayed for _the j-th sub-image display period Tj. is an image,
A method of driving a display device that satisfies sub-image distribution conditions for the L, the T, the L _j , and the T _{j ,} comprising:
In each sub-image, the characteristics of the change in brightness with respect to gradation are calculated by shifting from linear to the sum of the amount of brightness shifted from linear to brighter and the sum of the amount of brightness shifted from linear to darker. , are approximately the same for all gradations.
Here, the original image data created in the first step can be used as the image data that is sequentially prepared at the constant cycle T. FIG. That is, all the display patterns mentioned in the explanation of the first step can be combined with the driving method described above.

It is clear that the above driving method can be implemented in combination with various n and m used in the first step.

Then, when the number of sub-images J is determined to be 2 in procedure 2 of the second step and T ₁ =T ₂ =T/2 in procedure 3, the driving method is shown in FIG. It will be something like
Since the features and advantages of the driving method shown in FIG. 69 (display timing for various n and m) have already been described, detailed description is omitted here. It is clear that the gamma interpolation method has similar advantages when the method of distributing the .times..times..times..times..times..times..times..times..times..times..times..times. For example, if the interpolated image in the first step is an intermediate image obtained by motion compensation, the motion of the moving image can be smoothed, so the quality of the moving image can be significantly improved. Furthermore, when the display frame rate is high, the quality of moving images can be improved, and when the display frame rate is low, power consumption and manufacturing costs can be reduced. Furthermore, when the display device is an active matrix type liquid crystal display device, the problem of insufficient write voltage due to dynamic capacitance can be avoided, so that a particularly remarkable image quality improvement effect can be obtained against obstacles such as trailing of moving images and afterimages. Furthermore, flicker that appears due to AC driving can be reduced to the extent that it is not perceived by the human eye.

Among the methods for distributing the brightness of the original image to a plurality of sub-images in procedure 1 of the second step, the characteristic advantage of selecting the gamma interpolation method is that an intermediate image is created by motion compensation. Since the operation of the circuit can be stopped or the circuit itself can be omitted from the device, the power consumption and the manufacturing cost of the device can be reduced. Furthermore, since a pseudo-impulse-type display method can be used regardless of the gradation values included in the image data, the quality of moving images can be improved. Further, sub-images may be obtained by directly gamma-converting the image data. In this case, there is an advantage that the gamma value can be controlled variously depending on the magnitude of motion of the moving image. Further, the image data may not be directly gamma-converted, but may be configured to obtain sub-images with changed gamma values by changing the reference voltage of a digital-to-analog conversion circuit (DAC). In this case, since the image data is not directly gamma-converted, the circuit that performs gamma conversion can be stopped or the circuit itself can be omitted from the device, so that the power consumption and the manufacturing cost of the device can be reduced. . Furthermore, in the gamma interpolation method, since the change in brightness _Lj of each sub-image with respect to gradation follows a gamma curve, each sub-image can display gradation smoothly by itself, and finally human This has the advantage that the quality of the image perceived by the human eye is also improved.

Here, the number J of sub-images is determined to be 2 in procedure 2, and T ₁ =
Although the case where it is determined that T ₂ =T/2 has been described, it is clearly not limited to this.

For example, if in procedure 3 in the second step it was determined that T ₁ <T ₂ , then the first sub-image can be made brighter and the second sub-image can be made darker. Furthermore, the second
In step 3, if it is determined that T ₁ >T ₂ , then the first sub-image can be made darker and the second sub-image can be made lighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of moving images can be improved. In addition, as in the above driving method, step 1
3, when the gamma method is selected among the methods of distributing the brightness of the original image to a plurality of sub-images, the gamma value may be changed when changing the brightness of the sub-images. That is, the gamma value may be determined according to the display timing of the second sub-image. By doing so, the circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the device, so that the power consumption and the manufacturing cost of the device can be reduced.

Furthermore, it is clear that in procedure 2 the number of sub-images J may be determined to be other values than two. Since the advantages of this case have already been described, a detailed explanation is omitted here. Clearly, the control strategy chosen has similar advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about (1/(J times the conversion ratio)) times the cycle of the input image data.

Next, another example of the driving method determined by the procedure in the second step will be described in detail.

In step 1 of the second step, a method of using intermediate images obtained by motion compensation as sub-images is selected,
In procedure 2 in the second step, the number of sub-images is determined to be 2,
In procedure 3 in the second step, if it is determined that T1=T2=T/2, the second
The driving method determined by the procedure in step 1 is as follows.

i-th (i is a positive integer) image data;
and the i+1th image data are sequentially prepared at a constant cycle T,
a k-th (k is a positive integer) image;
a k+1-th image;
A driving method for a display device for sequentially displaying a k+2-th image and an image at an interval of 1/2 times the period of the original image data,
the k-th image is displayed according to the i-th image data;
the k+1-th image is displayed according to image data corresponding to a motion obtained by multiplying the motion from the i-th image data to the i+1-th image data by 1/2;
The k+2-th image is displayed according to the i+1-th image data.
Here, the original image data created in the first step can be used as the image data sequentially prepared at the constant cycle T. FIG. That is, all the display patterns mentioned in the explanation of the first step can be combined with the above driving method.

It is obvious that the driving method described above can be implemented in combination with various n and m used in the first step.

A characteristic advantage of selecting the method of using the intermediate image obtained by motion compensation as a sub-image in procedure 1 in the second step is that the intermediate image obtained by motion compensation is used in procedure 1 in the first step. The point is that when an interpolated image is used, the method of obtaining the intermediate image used in the first step can be used in the second step as it is. In other words, the circuit that obtains the intermediate image by motion compensation can be used not only in the first step but also in the second step, so that the circuit can be used effectively and the processing efficiency can be improved. In addition, since the movement of images can be made smoother, the quality of moving images can be further improved.

Here, the number J of sub-images is determined to be 2 in procedure 2, and T ₁ =
Although the case where it is determined that T ₂ =T/2 has been described, it is clearly not limited to this.

For example, if in procedure 3 in the second step it was determined that T ₁ <T ₂ , then the first sub-image can be made brighter and the second sub-image can be made darker. Furthermore, the second
In step 3, if it is determined that T ₁ >T ₂ , then the first sub-image can be made darker and the second sub-image can be made lighter. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of moving images can be improved. By doing so, the original image can be properly perceived by the human eye, and at the same time, the display can be pseudo-impulse driven, so that the quality of moving images can be improved. In addition, as in the above driving method, in procedure 2,
If the method of using an intermediate image obtained by motion compensation as a sub-image is selected, it is not necessary to change the brightness of the sub-image. This is because the image in the intermediate state is complete as an image by itself, so even if the display timing of the second sub-image changes, the image perceived by the human eye does not change. In this case, the circuit that changes the brightness of the entire image can be stopped or the circuit itself can be omitted from the device, so power consumption and manufacturing cost of the device can be reduced.

Furthermore, it is clear that in procedure 2 the number of sub-images J may be determined to be other values than two. Since the advantage in that case has already been described, detailed description is omitted here. However, the same applies when the method of using the intermediate image obtained by motion compensation as the sub-image is selected in procedure 1 of the second step. Clearly, it has significant advantages. For example, the image quality can be improved by applying to a liquid crystal display device in which the response time of the liquid crystal element is about (1/(J times the conversion ratio)) times the cycle of the input image data.

Next, a specific example of a frame rate conversion method when the input frame rate and the display frame rate are different will be described with reference to FIG. In the method shown in FIGS. 71A to 71C, it is assumed that the circular area on the image is an area whose position changes depending on the frame, and the triangular area on the image is an area whose position hardly changes depending on the frame. there is however,
This is an example for explanation, and the displayed image is not limited to this. The methods of FIGS. 71A to 71C can be applied to various images.

FIG. 71A shows a case where the display frame rate is twice the input frame rate (the conversion ratio is 2). A conversion ratio of 2 has the advantage that the quality of moving images can be improved over a conversion ratio of less than 2. Furthermore, when the conversion ratio is 2, there is an advantage that power consumption and manufacturing cost can be reduced as compared with the case where the conversion ratio is greater than 2. Figure 71 (
A) schematically shows how the displayed image changes over time, with the horizontal axis representing time. Here, the image of interest is referred to as the p-th image (p is a positive integer). Then, the image displayed next to the focused image is the (p+1)th image,
An image displayed in front of the focused image is referred to as the (p-1)th image, and for the sake of convenience, how far it is displayed from the focused image is indicated. It is assumed that Image 180701 is the pth image, image 180702 is the (p+1)th image, image 180703 is the (p+2)th image, image 180704 is the (p+3)th image, image 1
Assume that 80705 is the (p+4)th image. A period Tin represents the cycle of the input image data. Note that FIG. 71A shows a case where the conversion ratio is 2, so the period Tin
is twice as long as the period from when the p-th image is displayed until when the (p+1)-th image is displayed.

Here, the (p+1)th image 180702 is obtained from the pth image 180701 to the (p+2)th image.
180703 may be an image that is created in an intermediate state between the p-th image 180701 and the (p+2)-th image 180703 by detecting the amount of change in the image up to the image 180703 of . In FIG. 71A, an area (circular area) whose position changes with the frame and an area (triangular area) whose position hardly changes with the frame represent the state of the image in the intermediate state. That is, the position of the circular area in the (p+1)th image 180702 is set to the middle position between the position in the pth image 180701 and the position in the (p+2)th image 180703 . That is, the (p+1)-th image 180702 is obtained by performing motion compensation and interpolating image data. In this way, smooth display can be achieved by performing motion compensation on an object that moves on the image and interpolating the image data.

Furthermore, the (p+1)th image 180702 is the pth image 180701 and the (p+2)th image 180701
), and the brightness of the image may be controlled according to a certain rule. The certain rule is, for example, as shown in FIG. In Lc, there may be a relationship of L>Lc. Desirably,
There may be a relationship of 0.1L<Lc<0.8L. More preferably, 0.2L<L
There may be a relationship of c<0.5L. Alternatively, conversely, L and Lc may have a relationship of L<Lc. Desirably, there may be a relationship of 0.1Lc<L<0.8Lc.
More desirably, there may be a relationship of 0.2Lc<L<0.5Lc. By doing so, the display can be pseudo-impulse type, so that the afterimage of the eyes can be suppressed.

Note that typical luminance of an image will be described later in detail with reference to FIG.

Thus, there are two different causes for motion blur (image motion is not smooth,
and eye persistence), motion blur can be significantly reduced.

Further, for the (p+3)th image 180704, the (p+2)th image 180703
and the (p+4)th image 180705 using a similar method. That is, the (p+3)-th image 180704 is obtained by converting the (p+2)-th image 180703 to the (p-th) image 180703 .
+4) image 180705, the (p+2)th image 1
80703 and the (p+4)-th image 180705, and may be an image in which the brightness of the image is controlled according to a certain rule.

FIG. 71B shows a case where the display frame rate is three times the input frame rate (conversion ratio is 3). FIG. 71B schematically shows how the displayed image changes over time, with the horizontal axis representing time. Image 180711 is the p-th image, image 1807
12 is the (p+1)th image, image 180713 is the (p+2)th image, image 180714
is the (p+3)th image, image 180715 is the (p+4)th image, image 180716 is the (p+5)th image, and image 180717 is the (p+6)th image. A period Tin represents the cycle of the input image data. Since FIG. 71B shows a case where the conversion ratio is 3, the period Tin is three times the period from the display of the p-th image to the display of the (p+1)-th image. be the length.

Here, the (p+1)-th image 180712 and the (p+2)-th image 180713 are obtained by detecting the amount of change in the images from the p-th image 180711 to the (p+3)-th image 180714. and (p+3)-th image 180714 may be an image created so as to be in an intermediate state. In FIG. 71B, the image in the intermediate state is represented by an area (circular area) whose position changes with the frame and an area (triangular area) whose position hardly changes with the frame. That is, the positions of the circular regions in the (p+1)th image 180712 and the (p+2)th image 180713 are intermediate positions between the positions in the pth image 180711 and the positions in the (p+3)th image 180714 . Specifically, when the amount of movement of the circular region detected from the p-th image 180711 and the (p+3)th image 180714 is X, the position of the circular region in the (p+1)th image 180712 is It may be a position displaced by about (⅓)X from the position in the p-th image 180711 . Furthermore, the (p+2)th image 1807
13 is (2/3
) may be a position displaced by about X. That is, the (p+1)-th image 180712 and the (p+2)-th image 180713 are obtained by performing motion compensation and interpolating image data. In this way, smooth display can be achieved by performing motion compensation on an object that moves on the image and interpolating the image data.

Furthermore, the (p+1)-th image 180712 and the (p+2)-th image 180713 are created so as to have an intermediate state between the p-th image 180711 and the (p+3)-th image 180714, and the brightness of the image is fixed. It may be an image controlled by the rule of The fixed rule is, for example, as shown in FIG.
The representative luminance of the p+1) image 180712 is Lc1, and the (p+2)th image 180713
is Lc2, L>Lc1 or L
>Lc2 or Lc1=Lc2. Desirably, 0.1L<Lc
There may be a relationship of 1=Lc2<0.8L. More preferably, 0.2L<Lc=
There may be a relationship of Lc2<0.5L. Alternatively, conversely, L, Lc1, and Lc2 may have a relationship of L<Lc1, L<Lc2, or Lc1=Lc2. Desirably, there may be a relationship of 0.1Lc1=0.1Lc2<L<0.8Lc1=0.8Lc2. More preferably, 0.2Lc1=0.2Lc2<L<0.5Lc1=0.5
There may be a relationship of Lc2. By doing so, the display can be pseudo-impulse type, so that the afterimage of the eyes can be suppressed. Alternatively, images with varying brightness may alternately appear. By doing so, the period in which the luminance changes can be shortened, so that flicker can be reduced.

Thus, there are two different causes for motion blur (image motion is not smooth,
and eye persistence), motion blur can be significantly reduced.

Further, the (p+4)th image 180715 and the (p+5)th image 180716 may also be created from the (p+3)th image 180714 and the (p+6)th image 180717 using a similar method. That is, the (p+4)-th image 180715 and the (p+5)-th image 180716 are obtained by detecting the image change amount from the (p+3)-th image 180714 to the (p+6)-th image 180717. image of 18071
It may be an image created so as to have an intermediate state between the 4th and (p+6)th images 180717, and furthermore, an image in which the brightness of the image is controlled according to a certain rule.

Note that when the method of FIG. 71B is used, the display frame rate is high, so the movement of the image can follow the movement of the eyes well, and the movement of the image can be displayed smoothly. can be greatly reduced.

In FIG. 71(C), the display frame rate is 1.5 times the input frame rate (conversion ratio 1.5).
). FIG. 71C schematically shows how the displayed image changes over time, with the horizontal axis representing time. Image 180721 is the p-th image, Image 1
80722 is the (p+1)th image, image 180723 is the (p+2)th image, image 180
724 is the (p+3)th image. Although it is not necessary to actually display the image 180725, the image 180725 is input image data, and the (p+1)-th image 180722 and the (p-th) image 180722
+2) image 180723 may be used to create. A period Tin represents the cycle of the input image data. Note that FIG. 71C shows the case where the conversion ratio is 1.5, so the period Tin is 1, which is the period from the display of the p-th image to the display of the (p+1)-th image. .5 times longer.

Here, the (p+1)-th image 180722 and the (p+2)-th image 180723 pass from the p-th image 180721 to the image 180725 to the (p+3)-th image 180724
The image may be an image created so as to be in an intermediate state between the p-th image 180721 and the (p+3)-th image 180724 by detecting the amount of change in the image up to. In FIG. 71C, an area (circular area) whose position changes with the frame and an area (triangular area) whose position hardly changes with the frame represent the state of the image in the intermediate state.
That is, the positions of the circular regions in the (p+1)th image 180722 and the (p+2)th image 180723 are intermediate positions between the positions in the pth image 180721 and the positions in the (p+3)th image 180724 . That is, the (p+1)th image 180
722 and the (p+2)th image 180723 are obtained by performing motion compensation and interpolating the image data. In this way, smooth display can be achieved by performing motion compensation on an object that moves on the image and interpolating the image data.

Furthermore, the (p+1)-th image 180722 and the (p+2)-th image 180723 are created so as to have an intermediate state between the p-th image 180721 and the (p+3)-th image 180724, and the brightness of the image is fixed. It may be an image controlled by the rule of The fixed rule is, for example, as shown in FIG.
p+1) image 180722 is represented by Lc1, and the (p+2)th image 180723
is Lc2, L>Lc1 or L
>Lc2 or Lc1=Lc2. Desirably, 0.1L<Lc
There may be a relationship of 1=Lc2<0.8L. More preferably, 0.2L<Lc=
There may be a relationship of Lc2<0.5L. Alternatively, conversely, L, Lc1, and Lc2 may have a relationship of L<Lc1, L<Lc2, or Lc1=Lc2. Desirably, there may be a relationship of 0.1Lc1=0.1Lc2<L<0.8Lc1=0.8Lc2. More preferably, 0.2Lc1=0.2Lc2<L<0.5Lc1=0.5
There may be a relationship of Lc2. By doing so, the display can be pseudo-impulse type, so that afterimages of the eyes can be suppressed. Alternatively, images with varying brightness may alternately appear. By doing so, the period in which the luminance changes can be shortened, so that flicker can be reduced.

Thus, there are two different causes for motion blur (image motion is not smooth,
and eye persistence), motion blur can be significantly reduced.

Note that when the method in FIG. 71C is used, the display frame rate is low, so the time for writing a signal to the display device can be lengthened. Therefore, since the clock frequency of the display device can be reduced, power consumption can be reduced. Moreover, since the processing speed of motion compensation can be slowed down, power consumption can be reduced.

Next, with reference to FIG. 72, typical luminance of an image will be described. 72(A) to (D)
) schematically shows how the displayed image changes over time, with the horizontal axis representing time. FIG. 72(E) is an example of a method for measuring the luminance of an image within a certain area.

As a method of measuring the luminance of an image, there is a method of individually measuring the luminance of each pixel constituting the image. Using this method, it is possible to measure the brightness of the image details precisely.

However, since the method of individually measuring the luminance of each pixel constituting an image requires a great deal of labor, another method may be used. Another method of measuring the luminance of an image is to focus on a region within the image and measure the average luminance of that region. This method makes it possible to easily measure the luminance of an image. In the present embodiment, the brightness obtained by the method of measuring the average brightness of a certain area in the image is called the representative brightness of the image for convenience.

Then, in order to obtain the representative brightness of the image, which area in the image should be focused on will be described below.

FIG. 72A shows an example of a method of using the luminance of an area (triangular area) whose position is almost unchanged with respect to image changes as the representative luminance of the image. The period Tin is the period of the input image data, the image 180801 is the pth image, the image 180802 is the (p+1)th image, and the image 18
0803 is the (p+2)th image, the first area 180804 is the luminance measurement area in the pth image 180801, the second area 180805 is the luminance measurement area in the (p+1)th image 180802, the third area 180806 is the The brightness measurement regions in the (p+2) image 180803 are respectively shown. Here, the first to third regions may be assumed to have substantially the same spatial position within the device. That is, by measuring the representative luminance of the image in the first to third regions, it is possible to obtain the temporal change in the representative luminance of the image.

By measuring the representative brightness of the image, it is possible to determine whether the display is pseudo-impulsive. For example, let the luminance measured in the first region 180804 be L,
If Lc<L, where Lc is the luminance measured in the second area 180805, it can be said that the display is pseudo-impulse. In such a case, it can be said that the quality of the moving image is improved.

In the luminance measurement area, the image quality can be improved if the representative luminance change amount (relative luminance) of the image with respect to time changes is within the following range. As the relative luminance, for example, the larger one for each of the first region 180804 and the second region 180805, the second region 180805 and the third region 180806, and the first region 180804 and the third region 180806. It can be the ratio of the smaller luminance to the luminance. In other words, when the amount of change in typical luminance of an image with respect to time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of moving images can be improved. In particular, when the relative luminance is 50% or less, the quality of moving images can be significantly improved. Furthermore, if the relative brightness is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, when the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. i.e.
If the relative luminance is 10% or more and 80% or less, it is possible to improve the quality of moving images and reduce power consumption and flicker. Furthermore, when the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72B shows an example of a method of measuring the brightness of the tiled regions and using the average value as the representative brightness of the image. The period Tin is the period of the input image data, and the image 1808
11 is the pth image, image 180812 is the (p+1)th image, image 180813 is the (p
+2) image, the first area 180814 is the luminance measurement area in the p-th image 180811, the second area 180815 is the luminance measurement area in the (p+1)th image 180812, the third area 180816 is the (p+2)th image. Each represents a luminance measurement area in an image 180813 . Here, the first to third regions may be assumed to have substantially the same spatial position within the device. That is, by measuring the representative luminance of the image in the first to third regions, it is possible to obtain the temporal change in the representative luminance of the image.

By measuring the representative brightness of the image, it is possible to determine whether the display is pseudo-impulsive. For example, if L is the average value of luminance measured in the first region 180814 in all regions, and Lc is the average value of luminance in all regions measured in the second region 180815, Lc < L In other words, the display can be said to be pseudo-impulse. In such a case, it can be said that the quality of the moving image is improved.

In the luminance measurement area, the image quality can be improved if the representative luminance change amount (relative luminance) of the image with respect to time changes is within the following range. As the relative brightness, for example, the larger one between the first region 180814 and the second region 180815, between the second region 180815 and the third region 180816, and between the first region 180814 and the third region 180816. It can be the ratio of the smaller luminance to the luminance. In other words, when the amount of change in typical luminance of an image with respect to time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of moving images can be improved. In particular, when the relative luminance is 50% or less, the quality of moving images can be significantly improved. Furthermore, if the relative brightness is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, when the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. i.e.
If the relative luminance is 10% or more and 80% or less, it is possible to improve the quality of moving images and reduce power consumption and flicker. Furthermore, when the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72(C) shows an example of a method of measuring the luminance in the central region of the image and using the average value as the representative luminance of the image. The period Tin is the period of the input image data, the image 180821 is the pth image, the image 180822 is the (p+1)th image, the image 180823 is the (p+2)th image, and the first region 180824 is the luminance in the pth image 180821. A measurement area, a second area 180825, represents a luminance measurement area in the (p+1)th image 180822, and a third area 180826 represents a luminance measurement area in the (p+2)th image 180823, respectively.

By measuring the representative brightness of the image, it is possible to determine whether the display is pseudo-impulsive. For example, let the luminance measured in the first region 180824 be L,
If Lc<L, where Lc is the luminance measured in the second area 180825, it can be said that the display is pseudo-impulse. In such a case, it can be said that the quality of the moving image is improved.

In the luminance measurement area, the image quality can be improved if the representative luminance change amount (relative luminance) of the image with respect to time changes is within the following range. As the relative luminance, for example, the larger one of It can be the ratio of the smaller luminance to the luminance. In other words, when the amount of change in typical luminance of an image with respect to time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of moving images can be improved. In particular, when the relative luminance is 50% or less, the quality of moving images can be significantly improved. Furthermore, if the relative brightness is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, when the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. i.e.
If the relative luminance is 10% or more and 80% or less, it is possible to improve the quality of moving images and reduce power consumption and flicker. Furthermore, when the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72D shows an example of a method of measuring the brightness of a plurality of points sampled from the entire image and using the average value as the representative brightness of the image. the period Tin is the cycle of the input image data;
Image 180831 is the pth image, image 180832 is the (p+1)th image, image 1808
33 is the (p+2)th image, the first area 180834 is the luminance measurement area in the pth image 180831, the second area 180835 is the luminance measurement area in the (p+1)th image 180832, the third area 180836 is the The luminance measurement regions in the (p+2) image 180833 are respectively shown.

By measuring the representative brightness of the image, it is possible to determine whether the display is pseudo-impulsive. For example, if L is the average value of luminance measured in the first region 180834 in all regions, and Lc is the average value of luminance in all regions measured in the second region 180835, Lc < L In other words, the display can be said to be pseudo-impulse. In such a case, it can be said that the quality of the moving image is improved.

In the luminance measurement area, the image quality can be improved if the representative luminance change amount (relative luminance) of the image with respect to time changes is within the following range. As the relative brightness, for example, the larger of It can be the ratio of the smaller luminance to the luminance. In other words, when the amount of change in typical luminance of an image with respect to time is 0, the relative luminance is 100%. If the relative luminance is 80% or less, the quality of moving images can be improved. In particular, when the relative luminance is 50% or less, the quality of moving images can be significantly improved. Furthermore, if the relative brightness is 10% or more, power consumption can be reduced and flicker can be suppressed. In particular, when the relative luminance is 2
If it is 0% or more, power consumption and flicker can be significantly reduced. i.e.
If the relative luminance is 10% or more and 80% or less, it is possible to improve the quality of moving images and reduce power consumption and flicker. Furthermore, when the relative luminance is 20% or more and 50% or less, the quality of moving images can be significantly improved, and power consumption and flicker can be significantly reduced.

FIG. 72(E) is a diagram showing a method of measuring the luminance measurement area in the diagrams shown in FIGS. 72(A) to (D). A region 180841 is a brightness measurement region of interest, and a point 180842 is a brightness measurement point within the region 180841 . A luminance measuring device with high time resolution may have a small measurement target range. The luminance of the area 180841 may be determined as the luminance of the area 180841 by measuring the luminance at a plurality of points in a uniform manner and by averaging the measured values.

Note that if the image has a combination of the three primary colors R, G, and B, the measured luminance is
, B may be combined, R and G may be combined, G and B may be combined, B and R may be combined, or R, G, and B may be combined. It may be brightness.

Next, a method of detecting motion of an image included in input image data and creating an image in an intermediate state,
and a method of controlling the driving method according to the motion of the image included in the input image data.

An example of a method of detecting the motion of an image included in input image data and creating an image in an intermediate state will be described with reference to FIG. FIG. 73A shows a case where the display frame rate is twice the input frame rate (the conversion ratio is 2). FIG. 73A schematically shows a method of detecting motion of an image, with the horizontal axis representing time. The period Tin is the period of the input image data, the image 180901 is the pth image, and the image 180902 is the (p+1)th image.
and the image 180903 respectively represent the (p+2)th image. Also, a first area 180904, a second area 180905 and a third area 180906 are provided in the image as areas that do not depend on time.

First, in the (p+2)th image 180903, the image is divided into a plurality of tile-like regions, and the image data in the third region 180906, which is one of the regions, is focused.

Next, in the p-th image 180901, attention is focused on a range larger than the third area 180906 centering on the third area 180906. FIG. Here, the range centered on the third area 180906 and larger than the third area 180906 is the data search range. The data search range is 180907 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
08. The horizontal range 180907 and vertical range 180908 of the data search range may be ranges obtained by expanding the horizontal range and vertical range of the third area 180906 by about 15 pixels, respectively.

Then, within the data search range, an area having image data most similar to the image data in the third area 180906 is searched. A method of least squares or the like can be used as a search method. As a result of the search, the first area 18090 is selected as the area having the most similar image data.
Suppose that 4 is derived.

Next, a vector 180909 is derived as a quantity representing the positional difference between the derived first region 180904 and the third region 180906 . The vector 180909 is called a motion vector.

In the (p+1)th image 180902, the vector obtained from the motion vector 180909, the image data in the third area 180906 in the (p+2)th image 180903, and the first area in the pth image 180901 A second area 180905 is formed by the image data in 180904 and .

A vector obtained from the motion vector 180909 is called a displacement vector 180910 here. Displacement vector 180910 serves to determine the position to form second region 180905 . A second region 180905 is formed at a position separated from the third region 180906 by a displacement vector 180910 . Note that the displacement vector 180910 may be an amount obtained by multiplying the motion vector 180909 by a coefficient (1/2).

The image data in the second area 180905 in the (p+1)th image 180902 is the image data in the third area 180906 in the (p+2)th image 180903, and the image data in the pth image 180903.
may be determined by the image data in the first region 180904 in the image 180901 of . For example, the second region 1809 in the (p+1)th image 180902
05 is the third area 18090 in the (p+2)th image 180903
6 and the average value of the image data in the first area 180904 in the p-th image 180901 .

In this way, a second region 180905 in the (p+1)th image 180902 corresponding to the third region 180906 in the (p+2)th image 180903 can be formed. By performing the above processing on other areas in the (p+2)th image 180903, the (p+1)th image 180902, which is in an intermediate state between the (p+2)th image 180903 and the pth image 180901, can be formed.

FIG. 73B shows a case where the display frame rate is three times the input frame rate (conversion ratio is 3). FIG. 73B schematically shows a method of detecting motion of an image, with the horizontal axis representing time. The period Tin is the period of the input image data, and the image 1809
11 is the pth image, image 180912 is the (p+1)th image, image 180913 is the (p
+2) image and image 180914 represent the (p+3)th image. again,
In the image, a first region 180915 and a second region 1809 are shown as time-independent regions.
16, a third region 180917 and a fourth region 180918 are provided.

First, in the (p+3)th image 180914, the image is divided into a plurality of tile-like regions, and the image data in the fourth region 180918, which is one of the regions, is focused.

Next, in the p-th image 180911, attention is focused on a range larger than the fourth area 180918 centering on the fourth area 180918. FIG. Here, the range centered on the fourth area 180918 and larger than the fourth area 180918 is the data search range. The data search range is 180919 in the horizontal direction (X direction) and 1809 in the vertical direction (Y direction).
20. The horizontal range 180919 and vertical range 180920 of the data search range may be ranges obtained by expanding the horizontal range and vertical range of the fourth area 180918 by about 15 pixels, respectively.

Then, within the data search range, an area having image data most similar to the image data in the fourth area 180918 is searched. A method of least squares or the like can be used as a search method. As a result of the search, the first region 18091 is selected as the region having the most similar image data.
Assume that 5 is derived.

Next, a vector is derived as a quantity representing the positional difference between the derived first region 180915 and the fourth region 180918 . Note that this vector is the motion vector 180921
I will call it

Then, in the (p+1)th image 180912 and the (p+2)th image 180913, the first vector and the second vector obtained from the motion vector 180921,
The image data in the fourth area 180918 in the (p+3)th image 180914 and the image data in the first area 180915 in the pth image 180911 transform the second area 180916 and the third area 180917 into Form.

Here, the first vector obtained from the motion vector 180921 is the first displacement vector 18
Let's call it 0922. Also, the second vector is called a second displacement vector 180923 . The first displacement vector 180922 serves to determine the position that forms the second region 180916 . A second region 180916 is formed at a position separated from the fourth region 180918 by a first displacement vector 180922 . Note that the first displacement vector 180922 may be the amount obtained by multiplying the motion vector 180921 by (1/3). Also, the second displacement vector 180923 has a role of determining the position where the third region 180917 is formed. A third region 180917 is formed at a position separated from the fourth region 180918 by a second displacement vector 180923 . Note that the second displacement vector 180923
may be the amount obtained by multiplying the motion vector 180921 by (2/3).

The image data in the second area 180916 in the (p+1)th image 180912 is the image data in the fourth area 180918 in the (p+3)th image 180914, and the image data in the pth image 180914.
may be determined by the image data in the first region 180915 in the image 180911 of . For example, the second region 1809 in the (p+1)th image 180912
16 is the fourth area 18091 in the (p+3)th image 180914
8 and the average value of the image data in the first area 180915 in the p-th image 180911 .

The image data in the third area 180917 in the (p+2)th image 180913 is the image data in the fourth area 180918 in the (p+3)th image 180914 and the pth image 180914 .
may be determined by the image data in the first region 180915 in the image 180911 of . For example, the third region 1809 in the (p+2)th image 180913
17 is the fourth area 18091 in the (p+3)th image 180914
8 and the average value of the image data in the first area 180915 in the p-th image 180911 .

Thus, the second region 180916 in the (p+1)th image 180902 corresponding to the fourth region 180918 in the (p+3)th image 180914, and the second (
A third region 180917 in the image 180913 of p+2) can be formed.
By performing the above processing on other regions in the (p+3)th image 180914, an intermediate state between the (p+3)th image 180914 and the pth image 180911 is obtained.
A p+1)th image 180912 and a (p+2)th image 180913 can be formed.

Next, with reference to FIG. 74, an example of a circuit for detecting motion of an image included in input image data and creating an image in an intermediate state will be described. FIG. 74A is a diagram showing a connection relationship between a peripheral driver circuit including source drivers and gate drivers for displaying an image in a display region and a control circuit for controlling the peripheral driver circuit. FIG. 74B is a diagram showing an example of the detailed circuit configuration of the control circuit. FIG. 74C is a diagram showing an example of a detailed circuit configuration of an image processing circuit included in the control circuit. FIG. 74D is a diagram showing another example of the detailed circuit configuration of the image processing circuit included in the control circuit.

As shown in FIG. 74A, the device in this embodiment mode may include a control circuit 181011, a source driver 181012, a gate driver 181013, and a display area 181014.

Note that the control circuit 181011, the source driver 181012 and the gate driver 181
013 may be formed on the same substrate as the substrate on which the display area 181014 is formed.

Note that the control circuit 181011, the source driver 181012 and the gate driver 181
013 are partly formed on the same substrate as the substrate on which the display region 181014 is formed, and the other circuits are formed on a substrate different from the substrate on which the display region 181014 is formed. may be For example, the source driver 181012 and the gate driver 181013 may be formed on the same substrate on which the display area 181014 is formed, and the control circuit 181011 may be formed as an external IC on a different substrate. Similarly, the gate driver 181013 may be formed on the same substrate on which the display area 181014 is formed, and other circuits may be formed as external ICs on a different substrate. Similarly, part of the source driver 181012, gate driver 181013, and control circuit 181011 are formed on the same substrate as the display area 181014, and the other circuits are formed as external ICs on a different substrate. may have been

The control circuit 181011 controls an external image signal 181000, a horizontal synchronization signal 181001,
A vertical synchronization signal 181002 is input, an image signal 181003, a source start pulse 181004, a source clock 181005, and a gate start pulse 18100.
6 and the gate clock 181007 may be output.

A source driver 181012 outputs an image signal 181003 and a source start pulse 181
004 and a source clock 181005 may be input and a voltage or current according to the image signal 181003 may be output to the display area 181014 .

The gate driver 181013 may be configured to receive the gate start pulse 181006 and the gate clock 181007 and output a signal designating the timing of writing the signal output from the source driver 181012 to the display area 181014 .

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the signals for controlling the timings for driving the source driver 181012 and the gate driver 181013 also correspond to the input horizontal synchronizing signal 181001 and vertical synchronizing signal 1810 .
02 will have a different frequency. Therefore, in addition to processing the image signal 181003, it is also necessary to process signals for controlling the timing of driving the source driver 181012 and the gate driver 181013. FIG. The control circuit 181011 may be a circuit having that function. For example, when the frequency of the image signal 181003 is double the frequency of the external image signal 181000, the control circuit 181011 controls the external image signal 18
The image signal included in 1000 is interpolated to generate a double frequency image signal 181003, and the timing control signal is also controlled to double the frequency.

Further, the control circuit 181011 includes an image processing circuit 181015, as shown in FIG.
A timing generation circuit 181016 may be included.

The image processing circuit 181015 receives an external image signal 181000 and a frequency control signal 18100.
8 and , may be input and an image signal 181003 may be output.

A timing generation circuit 181016 generates a horizontal synchronizing signal 181001 and a vertical synchronizing signal 181
002 and , are input, and a source start pulse 181004 and a source clock 1810
05, gate start pulse 181006, gate clock 181007, and frequency control signal 181008 may be output. Note that the timing generation circuit 181016 may include a memory, register, or the like that holds data for designating the state of the frequency control signal 181008 . Also, the timing generation circuit 181016 may be configured to receive a signal designating the state of the frequency control signal 181008 from the outside.

The image processing circuit 181015 includes a motion detection circuit 181020, a first memory 181021, a second memory 181022, a third memory 181023, a brightness control circuit 181024, and a high-speed processing circuit 181024, as shown in FIG. and circuit 181025.

The motion detection circuit 181020 may be configured to receive a plurality of image data, detect the motion of the image, and output image data representing an intermediate state of the plurality of image data.

A first memory 181021 receives an external image signal 181000, holds the external image signal 181000 for a certain period of time, and stores a motion detection circuit 181020 and a second memory 1810 together.
22 may be configured to output the external image signal 181000 .

The second memory 181022 receives the image data output from the first memory 181021 and outputs the image data to the motion detection circuit 181020 and the high-speed processing circuit 181025 while holding the image data for a certain period. There may be.

The third memory 181023 may be configured to receive the image data output from the motion detection circuit 181020 and output the image data to the brightness control circuit 181024 while holding the image data for a certain period.

The high-speed processing circuit 181025 receives the image data output from the second memory 181022,
The image data output from the luminance control circuit 181024 and the frequency control signal 181008 may be input, and the image data may be output as the image signal 181003 .

When the frequency of the external image signal 181000 and the frequency of the image signal 181003 are different, the image signal 181003 may be generated by interpolating the image signal included in the external image signal 181000 by the image processing circuit 181015 . Input external image signal 18100
0 is once held in the first memory 181021 . At that time, the second memory 18102
2 holds the image data input in the previous frame. motion detection circuit 18
1020 appropriately reads the image data held in the first memory 181021 and the second memory 181022, detects a motion vector from the difference between the two image data, and
Intermediate state image data may be generated. The generated intermediate state image data is held by the third memory 181023 .

When the motion detection circuit 181020 is generating intermediate state image data, the high speed processing circuit 1
81025 converts the image data held in the second memory 181022 into the image signal 18
Output as 1003. After that, the image data held in the third memory 181023 is output as the image signal 181003 through the brightness control circuit 181024 . At this time, the frequency with which the second memory 181022 and the third memory 181023 are updated is the same as the frequency of the external image signal 181000, but the frequency of the image signal 181003 output through the high-speed processing circuit 181025 It may be different from the frequency. Specifically, for example, the frequency of the image signal 181003 is the frequency of the external image signal 181000
1.5 times, 2 times, and 3 times the frequency of . However, it is not limited to this, and various frequencies can be used. Note that the frequency of the image signal 181003 may be designated by the frequency control signal 181008 .

The configuration of the image processing circuit 181015 shown in FIG. 74(D) is obtained by adding a fourth memory 181026 to the configuration of the image processing circuit 181015 shown in FIG. 74(C). In this way, the image data output from the first memory 181021 and the second memory 181022
By outputting the image data output from the fourth memory 181026 to the motion detection circuit 181020 in addition to the image data output from the 181020, it becomes possible to accurately detect the motion of the image.

If the input image data already contains motion vectors due to data compression or the like, for example, MPEG (Moving Picture Expert Gr.
oup) standard, an image in an intermediate state may be generated as an interpolated image using this. At this time, the portion for generating motion vectors included in the motion detection circuit 181020 becomes unnecessary. In addition, since the encoding and decoding processes for the image signal 181003 are simplified, power consumption can be reduced.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 6)
In this embodiment, the peripheral portion of the liquid crystal panel will be described.

FIG. 75 shows a backlight unit 20101 called an edge light type and a liquid crystal panel 2
0107 and an example of a liquid crystal display device. The edge-light type is a type in which a light source is arranged at the end of a backlight unit and fluorescence from the light source is emitted from the entire light-emitting surface.
The edge-light backlight unit is thin and can save power.

The backlight unit 20101 includes a diffuser plate 20102, a light guide plate 20103, and a reflector plate 20.
104 , a lamp reflector 20105 and a light source 20106 .

The light source 20106 has a function of emitting light as necessary. For example, as the light source 20106, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20105 has a function of efficiently guiding fluorescence from the light source 20106 to the light guide plate 20103 . The light guide plate 20103 has a function of totally reflecting fluorescence and guiding light over the entire surface. The diffuser plate 20102 has a function of reducing brightness unevenness. The reflector 20104 is
It has a function of reflecting and reusing light that leaks downward from the light guide plate 20103 (in the direction opposite to the liquid crystal panel 20107).

A control circuit for adjusting the brightness of the light source 20106 is connected to the backlight unit 20101 . This control circuit allows the brightness of the light source 20106 to be adjusted.

FIGS. 76A, 76B, 76C and 76D are diagrams showing detailed configurations of edge-light type backlight units. Descriptions of the diffusion plate, the light guide plate, the reflection plate, and the like are omitted.

A backlight unit 20201 shown in FIG. 76A includes a cold cathode tube 20203 as a light source.
It is a configuration using In order to efficiently reflect the light from the cold cathode tube 20203,
A lamp reflector 20202 is provided. Such configurations are often used in large displays because of the intensity of the luminance from cold cathode tubes.

The backlight unit 20211 shown in FIG. 76B includes light emitting diodes (L
ED) 20213 is used. For example, a light-emitting diode (LED) that emits white light
20213 are arranged at predetermined intervals. A lamp reflector 20212 is provided to efficiently reflect light from a light emitting diode (LED) 20213 .

Since the luminance of light-emitting diodes is high, the configuration using light-emitting diodes is suitable for large-sized display devices. Since light-emitting diodes have excellent color reproducibility, they can display images that are closer to the real thing. Since the LED has a small chip size, the layout area can be reduced. Therefore, the frame of the display device can be narrowed.

In addition, when the light-emitting diode is mounted on a large-sized display device, the light-emitting diode can be arranged on the back surface of the substrate. The light-emitting diodes maintain a predetermined interval, and the light-emitting diodes of each color are arranged in order. Color reproducibility can be improved by arranging the light-emitting diodes.

A backlight unit 20221 shown in FIG. 76C has a configuration using light-emitting diodes (LEDs) 20223, light-emitting diodes (LEDs) 20224, and light-emitting diodes (LEDs) 20225 of respective colors RGB as light sources. Light-emitting diodes (LEDs) 20 for each color RGB
223, a light emitting diode (LED) 20224, and a light emitting diode (LED) 20225 are arranged at predetermined intervals. Light emitting diode (LED) 20223 for each color RGB
, a light emitting diode (LED) 20224, and a light emitting diode (LED) 20225, color reproducibility can be improved. A lamp reflector 20222 is provided to efficiently reflect the light from the light emitting diode.

Since the brightness of light-emitting diodes is high, a configuration using light-emitting diodes of each color RGB as a light source is suitable for a large-sized display device. Since light-emitting diodes have excellent color reproducibility, they can display images that are closer to the real thing. Since the LED has a small chip size, the layout area can be reduced.
Therefore, the frame of the display device can be narrowed.

Color display can be performed by sequentially lighting the RGB light-emitting diodes according to time. This is the so-called field sequential mode.

Note that a light-emitting diode emitting white light and light-emitting diodes (LEDs) 2022 of each color RGB
3. A light emitting diode (LED) 20224 and a light emitting diode (LED) 20225 can be combined.

In addition, when the light-emitting diode is mounted on a large-sized display device, the light-emitting diode can be arranged on the back surface of the substrate. The light-emitting diodes maintain a predetermined interval, and the light-emitting diodes of each color are arranged in order. Color reproducibility can be improved by arranging the light-emitting diodes.

A backlight unit 20231 shown in FIG. 77D has a configuration in which light emitting diodes (LED) 20233, light emitting diodes (LED) 20234, and light emitting diodes (LED) 20235 of RGB are used as light sources. For example, RGB light-emitting diodes (LE
D) 20233, Light Emitting Diode (LED) 20234, Light Emitting Diode (LED) 20
235, a plurality of colors with low emission intensity (for example, green) are arranged. Color reproducibility can be improved by using light emitting diodes (LED) 20233, light emitting diodes (LED) 20234, and light emitting diodes (LED) 20235 of each color RGB. A lamp reflector 20232 is provided to efficiently reflect the light from the light emitting diode.

Since the brightness of light-emitting diodes is high, a configuration using light-emitting diodes of each color RGB as a light source is suitable for a large-sized display device. Since light-emitting diodes have excellent color reproducibility, they can display images that are closer to the real thing. Since the LED has a small chip size, the layout area can be reduced.
Therefore, the frame of the display device can be narrowed.

Color display can be performed by sequentially lighting the RGB light-emitting diodes according to time. This is the so-called field sequential mode.

Note that a light-emitting diode that emits white light and light-emitting diodes (LEDs) 2023 of each color RGB
3. A light emitting diode (LED) 20234 and a light emitting diode (LED) 20235 can be combined.

In addition, when the light-emitting diode is mounted on a large-sized display device, the light-emitting diode can be arranged on the back surface of the substrate. The light-emitting diodes maintain a predetermined interval, and the light-emitting diodes of each color are arranged in order. Color reproducibility can be improved by arranging the light-emitting diodes.

FIG. 79A shows an example of a liquid crystal display device having a so-called direct type backlight unit and a liquid crystal panel. The direct type is a method in which a light source is arranged directly below the light emitting surface so that the fluorescence of the light source is emitted from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20500 is composed of a diffusion plate 20501 , a light shielding plate 20502 , a lamp reflector 20503 and a light source 20504 .

Light emitted from the light source 20504 is collected on one side of the backlight unit 20500 by the lamp reflector 20503 . That is, the backlight unit 2050
0 will have a strongly emitting side and a less emitting side. At this time, by arranging the liquid crystal panel 20505 on the side of the backlight unit 20500 that emits strong light, the liquid crystal panel 20505 can be efficiently irradiated with the light emitted from the light source 20504 .

The light source 20504 has a function of emitting light as required. For example, as the light source 20504, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20503 has a function of efficiently guiding fluorescence from the light source 20504 to the diffusion plate 20501 and the light shielding plate 20502 . The light shielding plate 20502 has a function of reducing unevenness in lightness by increasing light shielding in accordance with the arrangement of the light sources 20504 as the light intensity increases. The diffusion plate 20501 further has a function of reducing brightness unevenness.

A control circuit for adjusting the brightness of the light source 20504 is connected to the backlight unit 20500 . This control circuit allows the brightness of the light source 20504 to be adjusted.

FIG. 79B shows an example of a liquid crystal display device having a so-called direct type backlight unit and a liquid crystal panel. The direct type is a method in which a light source is arranged directly below the light emitting surface so that the fluorescence of the light source is emitted from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20510 is composed of a diffusion plate 20511, a light shielding plate 20512, a lamp reflector 20513, and light sources (R) 20514a, light sources (G) 20514b, and light sources (B) 20514c of each color RGB.

Light emitted from the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c is collected on one surface of the backlight unit 20510 by the lamp reflector 20513. FIG. That is, the backlight unit 20510 has a surface that emits strong light and a surface that hardly emits light. At this time, the backlight unit 20510
By arranging the liquid crystal panel 20515 on the side of the light source (R) 205
14a, the light source (G) 20514b, and the light source (B) 20514c can efficiently irradiate the liquid crystal panel 20515 with light.

Light source (R) 20514a, light source (G) 20514b, and light source (B) 2051 for each color RGB
4c has a function of emitting light as required. For example, light source (R) 20514a, light source (
As the G) 20514b and the light source (B) 20514c, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20513 has a function of efficiently guiding the fluorescence of the light source 20514 to the diffusion plate 20511 and the light shielding plate 20512 . The light shielding plate 20512 has a function of reducing unevenness in lightness by increasing light shielding in accordance with the arrangement of the light sources 20514 as the light intensity increases. The diffusion plate 20511 further has a function of reducing brightness unevenness.

The backlight unit 20510 is connected to a control circuit for adjusting the brightness of the light source (R) 20514a, the light source (G) 20514b, and the light source (B) 20514c of each color RGB. With this control circuit, the light source (R) 20514a for each color RGB, the light source (G
) 20514b and light source (B) 20514c can be adjusted.

FIG. 77 is a diagram showing an example of the configuration of a polarizing plate (also referred to as a polarizing film).

The polarizing film 20300 includes a protective film 20301, a substrate film 20302, PVA
It has a polarizing film 20303 , a substrate film 20304 , an adhesive layer 20305 and a release film 20306 .

The PVA polarizing film 20303 has a function of generating light (linearly polarized light) only in a certain vibration direction. Specifically, the PVA polarizing film 20303 contains molecules (polarizers) in which electron densities are significantly different between vertical and horizontal directions. The PVA polarizing film 20303 can produce linearly polarized light by aligning the directions of molecules whose electron densities differ greatly between vertical and horizontal directions.

As an example, the PVA polarizing film 20303 is polyvinyl alcohol (Poly V
Inyl Alcohol) polymer film is doped with an iodine compound, and the PVA film is pulled in a certain direction to obtain a film in which iodine molecules are aligned in a certain direction. Light parallel to the long axis of the iodine molecule is absorbed by the iodine molecule. For high durability applications and high heat resistance applications, a dichroic dye may be used instead of iodine. The dye is preferably used in liquid crystal display devices such as LCDs for vehicles and LCDs for projectors, which require durability and heat resistance.

The PVA polarizing film 20303 has films (substrate films 20302
and substrate film 20304), the reliability can be increased. In addition, PVA
The polarizing film 20303 may be sandwiched between highly transparent and highly durable triacetylulose (TAC) films. Note that the substrate film and the TAC film function as protective layers for the polarizer of the PVA polarizing film 20303 .

On one of the substrate films (substrate film 20304), an adhesive layer 20305 is attached for attachment to the glass substrate of the liquid crystal panel. The adhesive layer 20305 is formed by applying an adhesive to the substrate film (substrate film 20304) on one side. Adhesive layer 203
05 is provided with a release film 20306 (separate film).

A protective film 20301 is provided on the other substrate film (substrate film 20302).

A hard coat scattering layer (antiglare layer) may be provided on the surface of the polarizing film 20300 . The hard coat scattering layer has fine irregularities formed on its surface by AG treatment and has an anti-glare function that scatters external light, so that external light can be prevented from being reflected on the liquid crystal panel. Surface reflection can be prevented.

Note that a plurality of optical thin film layers having different refractive indices may be multilayered (also referred to as antireflection treatment or AR treatment) on the surface of the polarizing film 20300 . A plurality of optical thin film layers having different refractive indices can reduce the reflectance of the surface due to the interference effect of light.

FIG. 78 is a diagram showing an example of system blocks of a liquid crystal display device.

A signal line 20412 is arranged extending from a signal line driver circuit 20403 in the pixel portion 20405 . In the pixel portion 20405 , scanning lines 20410 are arranged extending from the scanning line driver circuit 20404 . A plurality of pixels are arranged in a matrix in intersection regions between the signal lines 20412 and the scanning lines 20410 . Note that each of the plurality of pixels has a switching element. Therefore, it is possible to independently input a voltage for controlling the tilt of the liquid crystal molecules to each of the plurality of pixels. Such a structure in which a switching element is provided in each intersection region is called an active type. However, it is not limited to such an active type, and a passive type configuration may be used. The passive type has a simple process because each pixel does not have a switching element.

The driver circuit portion 20408 has a control circuit 20402 , a signal line driver circuit 20403 and a scanning line driver circuit 20404 . A video signal 20401 is input to the control circuit 20402 . The control circuit 20402 controls the signal line driving circuit 2040 according to the video signal 20401 .
3 and the scanning line driving circuit 20404 . Therefore, the video signal 20401 inputs a control signal to each of the signal line driver circuit 20403 and the scanning line driver circuit 20404 . Then, according to this control signal, the signal line driving circuit 20403 transfers the video signal to the signal line 2041.
2 and the scanning line driving circuit 20404 inputs the scanning signal to the scanning line 20410 . A switching element included in the pixel is selected according to the scanning signal, and a video signal is input to the pixel electrode of the pixel.

Note that the control circuit 20402 also controls the power supply 20407 according to the video signal 20401 . Power supply 20407 comprises means for supplying power to lighting means 20406 . As the lighting means 20406, an edge light backlight unit or a direct backlight unit can be used. However, as the lighting means 20406, a front light may be used. A front light is a plate-like light unit that is attached to the front side of the pixel portion and that is composed of a light emitter and a light guide that illuminate the entire area. With such lighting means,
Evenly illuminates the pixel area with low power consumption.

As shown in FIG. 78B, the scanning line driver circuit 20404 has circuits functioning as a shift register 20441 , a level shifter 20442 and a buffer 20443 . Signals such as a gate start pulse (GSP) and a gate clock signal (GCK) are input to the shift register 20441 .

As shown in FIG. 78C, the signal line driver circuit 20403 includes a shift register 20431, a first latch 20432, a second latch 20433, a level shifter 20434, and a buffer 20434.
0435. A circuit functioning as the buffer 20435 is a circuit having a function of amplifying a weak signal, and includes an operational amplifier or the like. level shifter 20
A signal such as a start pulse (SSP) is input to 434 and data (DATA) such as a video signal is input to the first latch 20432 . The second latch 20433 has a latch (LAT
) signals can be temporarily held and input to the pixel portion 20405 all at once. This is called line sequential driving. Therefore, the second latch can be omitted if the pixels are dot-sequentially driven instead of line-sequentially driven.

In this embodiment, a known liquid crystal panel can be used. For example, a structure in which a liquid crystal layer is sealed between two substrates can be used as a liquid crystal panel.
A transistor, a capacitor, a pixel electrode, an alignment film, or the like is formed over one substrate. A polarizing plate, a retardation plate, or a prism sheet may be arranged on the side opposite to the upper surface of one of the substrates. A color filter, a black matrix, a counter electrode, an alignment film, and the like are formed on the other substrate. A polarizing plate or a retardation plate may be arranged on the side opposite to the upper surface of the other substrate. Note that the color filters and the black matrix may be formed on the top surface of one of the substrates. A slit (
3D display can be performed by arranging the lattice.

A polarizing plate, a retardation plate, and a prism sheet can each be placed between the two substrates. Alternatively, it can be integral with either of the two substrates.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 7)
In this embodiment mode, the structure and operation of a pixel that can be applied to a liquid crystal display device will be described.

Note that in the present embodiment, TN (Twisted Nemesis) is used as the operation mode of the liquid crystal.
atic) mode, IPS (In-Plane-Switching) mode, FFS (
Fringe Field Switching) mode, MVA (Multi-dom
ain Vertical Alignment) mode, PVA (Patterned
Vertical Alignment), ASM (Axially Symmetric
ic aligned Micro-cell) mode, OCB (Optical Co
mpensated birefringence) mode, FLC (Ferroele
Liquid Crystal) mode, AFLC (Anti-Ferroe
lectric Liquid Crystal) or the like can be used.

FIG. 131A is a diagram showing an example of a pixel structure that can be applied to a liquid crystal display device.

A pixel 40100 includes a transistor 40101, a liquid crystal element 40102, and a capacitor 4010.
3. A gate of the transistor 40101 is connected to the wiring 40105 .
A first terminal of the transistor 40101 is connected to the wiring 40104 . transistor 4
A second terminal of 0101 is connected to the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 . A second electrode of the liquid crystal element 40102 corresponds to the counter electrode 40107 . A second electrode of the capacitor 40103 is connected to the wiring 40106 .

The wiring 40104 functions as a signal line. The wiring 40105 functions as a scanning line. The wiring 40106 functions as a capacitor line. Transistor 40101 functions as a switch. The capacitor 40103 functions as a holding capacitor.

The transistor 40101 may function as a switch, and the polarity of the transistor 40101 may be either P-channel or N-channel.

Note that a video signal is input to the wiring 40104 . A scanning signal is input to the wiring 40105 . A certain potential is supplied to the wiring 40106 . The scanning signal is a digital voltage signal of H level or L level. When the transistor 40101 is an N-channel type, the H level of the scanning signal is a potential at which the transistor 40101 can be turned on, and the L level of the scanning signal is a potential at which the transistor 40101 can be turned off. Alternatively, transistor 4
0101 is of the P-channel type, the H level of the scanning signal is a potential at which the transistor 40101 can be turned off, and the L level of the scanning signal is a potential at which the transistor 40101 can be turned on. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And this video signal current can be either analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Note that the constant potential supplied to the wiring 40106 is preferably equal to the potential of the counter electrode 40107 .

The operation of the pixel 40100 will be described separately when the transistor 40101 is on and when the transistor 40101 is off.

When the transistor 40101 is on, the wiring 40104 and the liquid crystal element 40102
and the first electrode of the capacitor 40103 are electrically connected. Therefore, a video signal is input from the wiring 40104 to the first electrode (pixel electrode) of the liquid crystal element 40102 and the first electrode of the capacitor 40103 through the transistor 40101 .
Then, the capacitor 40103 holds the potential difference between the video signal and the potential supplied to the wiring 40106 .

When the transistor 40101 is off, the wiring 40104 and the liquid crystal element 40102
and the first electrode of the capacitor 40103 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 are in a floating state. Since the capacitor 40103 holds the potential difference between the video signal and the potential supplied to the wiring 40106, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 are connected.
The electrodes maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40102
Transmittance is determined according to the video signal.

FIG. 131B is a diagram showing an example of a pixel structure that can be applied to a liquid crystal display device. In particular, FIG. 131B is a diagram showing an example of a pixel configuration applicable to a liquid crystal display device suitable for horizontal electric field mode (including IPS mode and FFS mode).

A pixel 40110 includes a transistor 40111, a liquid crystal element 40112, and a capacitor 4011.
3. A gate of the transistor 40111 is connected to a wiring 40115 .
A first terminal of the transistor 40111 is connected to the wiring 40114 . transistor 4
A second terminal of 0111 is connected to the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113 . A second electrode of the liquid crystal element 40112 is connected to the wiring 40116 . A second electrode of the capacitor 40113 is connected to the wiring 40116 .

The wiring 40114 functions as a signal line. The wiring 40115 functions as a scanning line. The wiring 40116 functions as a capacitor line. Transistor 40111 functions as a switch. The capacitor 40113 functions as a holding capacitor.

The transistor 40111 may function as a switch, and the polarity of the transistor 40111 may be either P-channel or N-channel.

Note that a video signal is input to the wiring 40114 . A scanning signal is input to the wiring 40115 . A certain potential is supplied to the wiring 40116 . The scanning signal is a digital voltage signal of H level or L level. When the transistor 40111 is an N-channel type, the H level of the scanning signal is a potential at which the transistor 40111 can be turned on, and the L level of the scanning signal is a potential at which the transistor 40111 can be turned off. Alternatively, transistor 4
0111 is a P-channel type, the H level of the scanning signal is a potential that can turn off the transistor 40111, and the L level of the scanning signal is a potential that can turn on the transistor 40111. FIG. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And the current of the video signal can be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40110 will be described separately when the transistor 40111 is on and when the transistor 40111 is off.

When the transistor 40111 is on, the wiring 40114 and the liquid crystal element 40112
and the first electrode of the capacitor 40113 are electrically connected. Therefore, a video signal is input from the wiring 40114 to the first electrode (pixel electrode) of the liquid crystal element 40112 and the first electrode of the capacitor 40113 through the transistor 40111 .
Then, the capacitor 40113 holds the potential difference between the video signal and the potential supplied to the wiring 40116 .

When the transistor 40111 is off, the wiring 40114 and the liquid crystal element 40112
and the first electrode of the capacitor 40113 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113 are in a floating state. Since the capacitor 40113 holds the potential difference between the video signal and the potential supplied to the wiring 40116, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113 are connected.
The electrodes maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40112
Transmittance is determined according to the video signal.

FIG. 132 is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. In particular, FIG.
is an example of a pixel configuration that can reduce the number of wirings and increase the aperture ratio of the pixel.

FIG. 132 shows two pixels (pixel 40200 and pixel 40210) arranged in the same column direction.
indicates For example, if pixel 40200 is located in the Nth row, pixel 40210 is N+
It is placed on the first line.

A pixel 40200 includes a transistor 40201, a liquid crystal element 40202, and a capacitor 4020.
3. A gate of the transistor 40201 is connected to the wiring 40205 .
A first terminal of the transistor 40201 is connected to the wiring 40204 . transistor 4
A second terminal of 0201 is connected to the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 . A second electrode of the liquid crystal element 40202 corresponds to the counter electrode 40207 . A second electrode of the capacitor 40203 is connected to the same wiring as the gate of the transistor in the previous row.

A pixel 40210 includes a transistor 40211, a liquid crystal element 40212, and a capacitor 4021.
3. A gate of the transistor 40211 is connected to a wiring 40215 .
A first terminal of the transistor 40211 is connected to the wiring 40204 . transistor 4
A second terminal of 0211 is connected to the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213 . A second electrode of the liquid crystal element 40212 corresponds to the counter electrode 40217 . The second electrode of the capacitor 40213 is the same wiring as the gate of the transistor in the previous row (wiring 40205).
It is connected to the.

The wiring 40204 functions as a signal line. The wiring 40205 functions as an N-th scanning line. The wiring 40206 functions as an N-th capacitor line. Transistor 40201 functions as a switch. The capacitor 40203 functions as a holding capacitor.

The wiring 40214 functions as a signal line. The wiring 40215 functions as the scanning line of the (N+1)th row. The wiring 40216 functions as a capacitor line of the (N+1)th row. transistor 4021
1 functions as a switch. The capacitor 40213 functions as a holding capacitor.

The transistors 40201 and 40211 only need to function as switches.
The polarity of the transistor 40201 and the polarity of the transistor 40211 may be either P-channel type or N-channel type.

Note that a video signal is input to the wiring 40204 . A scanning signal (
Nth line) is entered. A scanning signal (N+1th row) is input to the wiring 40215 .

The scanning signal is an H level or L level digital voltage signal. Transistor 40201 (
Alternatively, when the transistor 40211) is an N-channel type, the H level of the scanning signal is a potential that can turn on the transistor 40201 (or transistor 40211), and the L level of the scanning signal is a potential that can turn off the transistor 40201 (or transistor 40211). Alternatively, if the transistor 40201 (or transistor 40211) is of P-channel type,
The H level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned off, and the L level of the scanning signal is the transistor 40201 (or the transistor 40211).
) can be turned on. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current.
And the current of the video signal can be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40200 will be described separately when the transistor 40201 is on and when the transistor 40201 is off.

When the transistor 40201 is on, the wiring 40204 and the liquid crystal element 40202
and the first electrode of the capacitor 40203 are electrically connected. Therefore, a video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40202 and the first electrode of the capacitor 40203 through the transistor 40201 .
Then, the capacitor 40203 holds the potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the preceding row.

When the transistor 40201 is off, the wiring 40204 and the liquid crystal element 40202
and the first electrode of the capacitor 40203 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 are in a floating state. Since the capacitor 40203 holds the potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the preceding row, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 are connected to the video signal. Maintain the same (corresponding) potential as the signal. note that,
The liquid crystal element 40202 has a transmittance according to the video signal.

The operation of the pixel 40210 will be described separately when the transistor 40211 is on and when the transistor 40211 is off.

When the transistor 40211 is on, the wiring 40204 and the liquid crystal element 40212
and the first electrode of the capacitor 40213 are electrically connected. Therefore, a video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40212 and the first electrode of the capacitor 40213 through the transistor 40211 .
Then, the capacitor 40213 holds the potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row.

When the transistor 40211 is off, the wiring 40204 and the liquid crystal element 40212
and the first electrode (pixel electrode) of the capacitor 40213 are electrically cut off. Therefore, the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213 are in a floating state. Since the capacitor 40213 holds the potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row, the liquid crystal element 4021
2 and the first electrode of the capacitive element 40213 maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40212 has a transmittance according to the video signal.

FIG. 133 is a diagram showing an example of a pixel configuration that can be applied to a liquid crystal display device. In particular, Figure 133
is an example of a pixel configuration that can improve the viewing angle by using sub-pixels.

Pixel 40320 has sub-pixel 40300 and sub-pixel 40310 . pixel 403
20 has two sub-pixels, but pixel 40320 may have three or more sub-pixels.

A sub-pixel 40300 includes a transistor 40301, a liquid crystal element 40302, and a capacitor 40
303. A gate of the transistor 40301 is connected to a wiring 40305 . A first terminal of the transistor 40301 is connected to the wiring 40304 . A second terminal of the transistor 40301 is connected to the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 .
connected to the electrodes. A second electrode of the liquid crystal element 40302 corresponds to the counter electrode 40307 . A second electrode of the capacitor 40303 is connected to the wiring 40306 .

A sub-pixel 40310 includes a transistor 40311, a liquid crystal element 40312, and a capacitor 40
313. A gate of the transistor 40311 is connected to a wiring 40315 . A first terminal of the transistor 40301 is connected to the wiring 40304 . A second terminal of the transistor 40311 is connected to the first electrode of the liquid crystal element 40312 and the first electrode of the capacitor 40313 .
connected to the electrodes. A second electrode of the liquid crystal element 40312 corresponds to the counter electrode 40317 . A second electrode of the capacitor 40313 is connected to the wiring 40306 .

The wiring 40304 functions as a signal line. The wiring 40305 functions as a scanning line. The wiring 40315 functions as a signal line. The wiring 40306 functions as a capacitor line. Transistor 40301 functions as a switch. Transistor 40311 functions as a switch. The capacitor 40303 functions as a holding capacitor. The capacitor 40313 functions as a holding capacitor.

The transistor 40301 may function as a switch, and the polarity of the transistor 40301 may be either P-channel or N-channel. The transistor 40311 may function as a switch, and the polarity of the transistor 40311 may be a P-channel type or an N-channel type.
Channel type is also acceptable.

Note that a video signal is input to the wiring 40304 . A scanning signal is input to the wiring 40305 . A scanning signal is input to the wiring 40315 . A certain potential is supplied to the wiring 40306 .

The scanning signal is a digital voltage signal of H level or L level. transistor 403
01 (or transistor 40311) is an N-channel type, the H level of the scanning signal is a potential that can turn on the transistor 40301 (or transistor 40311), and the L level of the scanning signal is a potential that can turn off the transistor 40301 (or transistor 40311). . Alternatively, when the transistor 40301 (or the transistor 40311) is a P-channel type, the H level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off, and the L level of the scanning signal is the transistor 40301 (or the transistor 40311).
311) can be turned on. Note that the video signal is an analog voltage. However, it is not limited to this, and the video signal may be a digital voltage. Alternatively, the video signal may be current. And the current of the video signal can be analog or digital. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. In addition, wiring 4
0306 is the potential of the counter electrode 40307 or the counter electrode 4031
It is preferably equal to the potential of 7.

Regarding the operation of the pixel 40320, the transistor 40301 is turned on and the transistor 4031 is turned on.
1 is off, the case where the transistor 40301 is off and the transistor 40311 is on, and the case where the transistors 40301 and 40311 are off will be described separately.

When the transistor 40301 is on and the transistor 40311 is off, the wiring 40304 and the first electrode (pixel electrode) of the liquid crystal element 40302 in the sub-pixel 40300
and the first electrode of the capacitor 40303 are electrically connected. Therefore, a video signal is input from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 through the transistor 40301 . Then, the capacitive element 403
03 holds the potential difference between the video signal and the potential supplied to the wiring 40306 . At this time, in the sub-pixel 40310, the wiring 40304 and the first electrode of the liquid crystal element 40312 (
pixel electrode) and the first electrode of the capacitor 40313 are electrically cut off. Therefore, no video signal is input to sub-pixel 40310 .

When the transistor 40301 is off and the transistor 40311 is on, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 in the sub-pixel 40300. be done. Therefore, the liquid crystal element 4
The first electrode 0302 and the first electrode of the capacitor 40303 are in a floating state. capacitive element 40
Since 303 holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 have the same (corresponding) potential as the video signal. maintain. At this time, in the sub-pixel 40310, the wiring 403
04, the first electrode (pixel electrode) of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are electrically connected. Therefore, the video signal is transmitted from the wiring 40304 through the transistor 40311 to the first electrode (pixel electrode) of the liquid crystal element 40312 and the capacitor 4031 .
3 is input to the first electrode. Then, the capacitive element 40313 is connected to the video signal and the wiring 40316
holds the potential difference from the potential supplied to

When the transistors 40301 and 40311 are off, the sub-pixel 4
In 0300, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 . Therefore, the liquid crystal element 4030
2 and the first electrode of the capacitor 40303 are in a floating state. capacitive element 40303
holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 are the same as the video signal (
corresponding) potential. Note that the liquid crystal element 40302 has a transmittance according to the video signal. At this time, in the sub-pixel 40310 , the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40312 and the first electrode of the capacitor 40313 . Therefore, the first electrode of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are in a floating state. Since the capacitor 40313 holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40312 and the capacitor 403
The 13 first electrodes maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40
312 is the transmittance according to the video signal.

The video signal input to sub-pixel 40300 may have a different value from the video signal input to sub-pixel 40310 . In this case, the orientation of the liquid crystal molecules of the liquid crystal element 40302 is changed to that of the liquid crystal element 4.
Since the orientation of the liquid crystal molecules can be different from that of 0312, the viewing angle can be widened.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 8)
In this embodiment, a method for driving a display device will be described. In particular, a method for driving a liquid crystal display device will be described.

A liquid crystal panel that can be used in the liquid crystal display device described in this embodiment has a structure in which a liquid crystal material is sandwiched between two substrates. The two substrates each have electrodes for controlling the electric field applied to the liquid crystal material. A liquid crystal material is a material whose optical and electrical properties are changed by an externally applied electric field. Therefore, the liquid crystal panel
It is a device in which desired optical and electrical properties can be obtained by controlling the voltage applied to the liquid crystal material using the electrodes of the substrate. By arranging a large number of electrodes two-dimensionally to form pixels and individually controlling voltages applied to the pixels, a liquid crystal panel capable of displaying a fine image can be obtained.

Here, the response time of the liquid crystal material to changes in the electric field is the distance between the two substrates (cell gap)
And, depending on the type of liquid crystal material, etc., it is generally several milliseconds to several tens of milliseconds. Furthermore, the response time of the liquid crystal material is even longer when the change in electric field is small. This property causes image display problems such as afterimages, trailing, and contrast reduction when displaying moving images on the liquid crystal panel. is small), the degree of the aforementioned disturbance becomes significant.

On the other hand, a problem specific to liquid crystal panels using an active matrix is a change in write voltage due to constant charge driving. The constant charge drive in this embodiment will be described below.

A pixel circuit in an active matrix includes a switch that controls writing and a capacitive element that holds charges. A method of driving a pixel circuit in an active matrix is to turn on a switch to write a predetermined voltage into the pixel circuit, and then immediately turn off the switch to hold the charge in the pixel circuit (hold state). In the hold state, no charge is exchanged between the inside and the outside of the pixel circuit (constant charge). Normally, the period in which the switch is in the off state is about several hundred (the number of scanning lines) times longer than the period in which the switch is in the on state. Therefore, it can be considered that most of the switches in the pixel circuit are in an off state.
As described above, constant charge driving in the present embodiment is a driving method in which the pixel circuit is in the hold state for most of the period when the liquid crystal panel is driven.

Next, the electrical properties of the liquid crystal material will be described. When the electric field applied from the outside changes, the liquid crystal material changes not only in its optical properties but also in its dielectric constant. That is, when each pixel of the liquid crystal panel is considered as a capacitive element (liquid crystal element) sandwiched between two electrodes, the capacitive element is a capacitive element whose capacitance changes depending on the applied voltage. This phenomenon is called dynamic capacitance.

When the capacitive element whose capacitance changes with the applied voltage is driven by the constant charge driving described above, the following problems arise. That is, there is a problem that when the electrostatic capacitance of the liquid crystal element changes in the hold state in which charge is not transferred, the applied voltage also changes. This can be understood from the fact that the amount of charge is constant in the relational expression of (amount of charge)=(capacitance)×(applied voltage).

For the above reasons, in the liquid crystal panel using the active matrix, the voltage in the hold state changes from the voltage in writing due to constant charge driving. As a result, the transmittance of the liquid crystal element is different from the change in the drive method without the hold state. FIG. 83 shows this situation. FIG. 83A shows an example of control of the voltage written to the pixel circuit, with the horizontal axis representing time and the vertical axis representing the absolute value of the voltage. FIG. 83B shows an example of control of the voltage written to the pixel circuit when the horizontal axis represents time and the vertical axis represents voltage. In FIG. 83C, the horizontal axis represents time and the vertical axis represents the transmittance of the liquid crystal element.
83(A) or 83(B) shows changes in transmittance of the liquid crystal element with time when the voltage shown in FIG. 83(A) or 83(B) is written in the pixel circuit. In FIGS. 83A to 83C, period F represents a voltage rewriting cycle, and voltage rewriting times are t ₁ , t ₂ , t ₃ , t ₄ , .
・Explain as

Here, _the write voltage corresponding to the image data input to _the liquid crystal display _device is |V ₁ | for rewriting at time ₀ , and |
Let V ₂ | (See FIG. 83(A))

The polarity of the write voltage corresponding to the image data input to the liquid crystal display device may be changed periodically. (Reversal drive: see FIG. 83B) By this method, it is possible to prevent DC voltage from being applied to the liquid crystal as much as possible. It should be noted that the cycle of switching the polarity (reversal cycle) may be the same as the voltage rewriting cycle. In this case, since the inversion cycle is short, it is possible to reduce the occurrence of flicker due to inversion driving. Furthermore, the inversion period may be an integral multiple of the voltage rewriting period. In this case, the inversion period is long, and the frequency of writing the voltage by changing the polarity can be reduced, so that power consumption can be reduced.

FIG. 83C shows changes in the transmittance of the liquid crystal element with time when the voltage shown in FIG. 83A or 83B is applied to the liquid crystal element. Here, a voltage |V ₁ is applied to the liquid crystal element
| is applied and the transmittance of the liquid crystal element after a sufficient time has passed is _TR1 . Similarly, a voltage |V ₂ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient amount of time has passed is TR ₂ . At time _t1 , when the voltage applied to the liquid crystal element changes from | _V1 | to | _V2 |, the transmittance of the liquid crystal element does not immediately become _TR2 as indicated by the dashed line 30401. change slowly. For example, when the voltage rewrite period is the same as the frame period (16.7 milliseconds) of the image signal of 60 Hz, it takes about several frames until the transmittance changes to _TR2 .

However, the smooth temporal change in transmittance as indicated by the dashed line 30401 is obtained when the voltage |V ₂ | is accurately applied to the liquid crystal element. In an actual liquid crystal panel, for example, a liquid crystal panel using an active matrix, constant charge driving causes the voltage in the hold state to change from the voltage in writing. does not change with time as shown in FIG. This is because the constant charge drive causes the voltage to change, so that the target voltage cannot be reached in one write operation. As a result, the response time of the transmittance of the liquid crystal element is apparently longer than the original response time (broken line 30401), and the image display problems such as afterimages, tailing, and contrast reduction are conspicuous. It will cause it.

By using overdrive driving, it is possible to simultaneously solve the problem of the inherently long response time of the liquid crystal element and the phenomenon that the apparent response time is further lengthened due to insufficient writing due to dynamic capacitance and constant charge driving. FIG. 84 shows this situation. FIG. 84A shows an example of control of the voltage written to the pixel circuit, with the horizontal axis representing time and the vertical axis representing the absolute value of the voltage. FIG. 84B shows an example of control of the voltage written to the pixel circuit when the horizontal axis represents time and the vertical axis represents voltage. In FIG. 84C, the horizontal axis represents time and the vertical axis represents the transmittance of the liquid crystal element, and the voltage shown in FIG. 84A or FIG. It represents the time change of transmittance. In FIGS. 84A to 84C, a period F represents a voltage rewriting cycle, and voltage rewriting times are t ₁ , t ₂ , t ₃ , t ₄ , . . . .

Here, the write voltage corresponding to the image data input to the liquid crystal display device is |V ₁ | for rewriting at time 0, |V ₃ | for rewriting at time t ₁ , time t ₂ , t ₃ , t
₄ , . . . is |V ₂ |. (See FIG. 84(A))

The polarity of the write voltage corresponding to the image data input to the liquid crystal display device may be changed periodically. (Reversal drive: see FIG. 84B) By this method, it is possible to avoid applying a DC voltage to the liquid crystal as much as possible, so that burn-in or the like due to deterioration of the liquid crystal element can be prevented. It should be noted that the cycle of switching the polarity (reversal cycle) may be the same as the voltage rewriting cycle. In this case, since the inversion cycle is short, it is possible to reduce the occurrence of flicker due to inversion driving. Furthermore, the inversion period may be an integral multiple of the voltage rewriting period. In this case, the inversion period is long, and the frequency of writing the voltage by changing the polarity can be reduced, so that power consumption can be reduced.

FIG. 84C shows changes in the transmittance of the liquid crystal element with time when the voltage shown in FIG. 84A or 84B is applied to the liquid crystal element. Here, a voltage |V ₁ is applied to the liquid crystal element
| is applied and the transmittance of the liquid crystal element after a sufficient time has passed is _TR1 . Similarly, a voltage |V ₂ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient amount of time has passed is TR ₂ . Similarly, a voltage |V ₃ | is applied to the liquid crystal element, and the transmittance of the liquid crystal element after a sufficient amount of time has passed is TR ₃ . At time t ₁ , the voltage applied to the liquid crystal element changes from |V ₁ | to |V
₃ |, the transmittance of the liquid crystal element tries to change to TR ₃ over several frames, as indicated by the dashed line 30501 . However, the application of the voltage |V ₃ | ends at time t ₂ and after time t ₂ the voltage |V ₂ | is applied. Therefore, the transmittance of the liquid crystal element is not as indicated by the dashed line 30501 but as indicated by the solid line 30502 . here,
It is preferable to set the value of the voltage |V ₃ | so that the transmittance is approximately TR ₂ at time t ₂ . Here, the voltage |V ₃ | is also called an overdrive voltage.

That is, the response time of the liquid crystal element can be controlled to some extent by changing the overdrive voltage |V ₃ |. This is because the response time of the liquid crystal changes depending on the strength of the electric field. Specifically, the stronger the electric field, the shorter the response time of the liquid crystal element, and the weaker the electric field, the longer the response time of the liquid crystal element.

The overdrive voltage |V ₃ | is preferably changed according to the amount of voltage change, that is, the voltages |V ₁ | and |V ₂ | that give the desired transmittances TR ₁ and TR ₂ . . This is because even if the response time of the liquid crystal element changes depending on the amount of voltage change, the optimum response time can always be obtained by changing the overdrive voltage |V ₃ | accordingly. be.

The overdrive voltage |V ₃ | is preferably changed according to the liquid crystal mode such as TN, VA, IPS, and OCB. This is because even if the response speed of the liquid crystal varies depending on the mode of the liquid crystal, the optimum response time can always be obtained by changing the overdrive voltage |V ₃ | accordingly.

Note that the voltage rewrite cycle F may be the same as the frame cycle of the input signal. In this case, since the peripheral driving circuit of the liquid crystal display device can be simplified, the liquid crystal display device can be manufactured at low cost.

Note that the voltage rewriting period F may be shorter than the frame period of the input signal. for example,
The voltage rewriting period F may be 1/2 times the frame period of the input signal, 1/3 times, or less. It is effective to use this method in combination with measures against deterioration of moving image quality caused by hold driving of the liquid crystal display device, such as black insertion driving, backlight blinking, backlight scanning, and intermediate image insertion driving by motion compensation. be. That is, since the required response time of the liquid crystal element is short, measures against deterioration in moving image quality caused by the hold driving of the liquid crystal display device can be made relatively easily by using the overdrive driving method described in this embodiment. can shorten the response time of the liquid crystal element. Although it is possible to substantially shorten the response time of a liquid crystal element by adjusting the cell gap, liquid crystal material, liquid crystal mode, etc., it is technically difficult. Therefore, it is very important to use a driving method such as overdrive that shortens the response time of the liquid crystal element.

Note that the voltage rewrite period F may be longer than the frame period of the input signal. for example,
The voltage rewriting period F may be twice the frame period of the input signal, may be three times, or may be longer than that. It is effective to use this method together with means (circuit) for determining whether or not the voltage is not rewritten for a long period of time. That is, when the voltage is not rewritten for a long period of time, the operation of the circuit can be stopped during that period by not performing the voltage rewriting operation itself, so that a liquid crystal display device with low power consumption can be obtained. can be done.

Next, a specific method for changing the overdrive voltage |V ₃ | according to the voltages |V ₁ | and |V ₂ | that give the desired transmittances TR ₁ and TR ₂ will be described.

The overdrive circuit is a circuit for appropriately controlling the overdrive voltage |V ₃ | according to the voltages |V ₁ | and |V ₂ | that give the desired transmittances TR ₁ and TR ₂ . The signal input to the drive circuit is the _voltage |V
₁ | and a signal related to the voltage |V ₂ | that gives the transmittance TR ₂ , and the signal output from the overdrive circuit is a signal related to the overdrive voltage |V ₃ |. Here, these signals include the voltages (|V ₁ |, |V ₂ |
, |V ₃ |), or a digital signal for applying a voltage to the liquid crystal element. Here, it is assumed that the signal related to the overdrive circuit is a digital signal.

First, referring to FIG. 80(A), the overall configuration of the overdrive circuit will be described. Here, the input image signal 301 is used as a signal for controlling the overdrive voltage.
01a and 30101b are used. Assume that as a result of processing these signals, an output image signal 30104 is output as a signal that gives an overdrive voltage.

Here, the voltages |V ₁ | and |V ₂ | that give the desired transmittances TR ₁ and TR ₂ are
Since the input image signals 30101a and 30101b are image signals in frames adjacent to each other, it is preferable that the input image signals 30101a and 30101b are also image signals in frames adjacent to each other. In order to obtain such a signal, input image signal 30101a is input to delay circuit 30102 in FIG.
1b. Delay circuit 30102 may be, for example, a memory. That is, in order to delay the input image signal 30101a by one frame, the input image signal 30101a is stored in the memory, and at the same time, the signal stored in the previous frame is stored in the memory as the input image signal 30101b. , and input the input image signal 30101a and the input image signal 30101b to the correction circuit 30103 at the same time, so that the image signals in adjacent frames can be handled. An output image signal 30104 can be obtained by inputting the image signals of adjacent frames to the correction circuit 30103 . Note that when a memory is used as the delay circuit 30102, it can be a memory (that is, a frame memory) having a capacity capable of storing image signals for one frame in order to delay by one frame. By doing so, it is possible to have a function as a delay circuit without excessive or insufficient memory capacity.

Next, the delay circuit 30102 configured mainly for the purpose of reducing memory capacity will be described. By using such a circuit as the delay circuit 30102, the memory capacity can be reduced, so that the manufacturing cost can be reduced.

As the delay circuit 30102 having such characteristics, specifically, one shown in FIG. 80B can be used. A delay circuit 30102 shown in FIG. 80B has an encoder 30105 , a memory 30106 and a decoder 30107 .

The operation of the delay circuit 30102 shown in FIG. 80B is as follows. First, before storing the input image signal 30101a in the memory 30106, the encoder 3010
5 performs compression processing. This can reduce the size of data to be stored in memory 30106 . As a result, the memory capacity can be reduced, so that the manufacturing cost can be reduced. The compressed image signal is sent to the decoder 30107 where it is decompressed. This allows the encoder 30105
can recover the previous signal that has been compressed by . Here, encoder 3010
5 and decoder 30107 may be reversible. By doing so, the image signal is not degraded even after the compression/decompression process is performed, so that the memory capacity can be reduced without degrading the quality of the image finally displayed on the device. Furthermore, the compression/decompression processing performed by encoder 30105 and decoder 30107 may be irreversible processing. By doing so, the data size of the image signal after compression can be made very small, so that the memory capacity can be greatly reduced.

As a method for reducing the memory capacity, various methods can be used other than the methods mentioned above. Instead of compressing the image with an encoder, the color information contained in the image signal is reduced (for example, from 260,000 colors to 65,000 colors), or the number of data is reduced (reduced resolution). method can be used.

Next, a specific example of the correction circuit 30103 will be described with reference to FIGS. 80(C) to (E). A correction circuit 30103 is a circuit for outputting an output image signal having a certain value from two input image signals. Here, if the relationship between the two input image signals and the output image signal is non-linear and difficult to obtain by simple calculation, a lookup table (LUT) may be used as the correction circuit 30103 . In the LUT, the relationship between the two input image signals and the output image signal is obtained in advance by measurement, so the output image signal corresponding to the two input image signals can be obtained simply by referring to the LUT. (See FIG. 80(C)) By using the LUT 30108 as the correction circuit 30103, the correction circuit 30103 can be realized without complicated circuit design or the like.

Here, since the LUT is one type of memory, it is preferable to reduce the memory capacity as much as possible in order to reduce manufacturing costs. As an example of the correction circuit 30103 for realizing this, the circuit shown in (D) of FIG. 80 can be considered. Correction circuit 30103 shown in (D) of FIG.
has LUT 30109 and adder 30110 . The LUT 30109 stores difference data between the input image signal 30101a and the output image signal 30104 to be output. That is, from the input image signal 30101a and the input image signal 30101b, corresponding difference data is extracted from the LUT 30109, and the extracted difference data and the input image signal 30
101a is added by an adder 30110, an output image signal 30104 can be obtained. By using difference data as the data stored in the LUT 30109, L
A reduction in the memory capacity of the UT can be realized. This is because the output image signal 30104 as it is
This is because the difference data has a smaller data size than the LUT 30109, so that the memory capacity required for the LUT 30109 can be reduced.

Furthermore, if the output image signal can be obtained by a simple arithmetic operation such as four arithmetic operations on two input image signals, it can be realized by a combination of simple circuits such as an adder, a subtractor, and a multiplier.
As a result, there is no need to use LUTs, and manufacturing costs can be greatly reduced.
As such a circuit, the circuit shown in (E) of FIG. 80 can be cited. ( in FIG. 80)
The correction circuit 30103 shown in E) includes a subtractor 30111, a multiplier 30112, and an adder 30111.
0113. First, the subtractor 30111 obtains the difference between the input image signal 30101a and the input image signal 30101b. A multiplier 30112 then multiplies the difference value by an appropriate coefficient. An output image signal 30104 can be obtained by using an adder 30113 to add a difference value obtained by multiplying the input image signal 30101a by an appropriate coefficient. By using such a circuit, the need to use an LUT is eliminated, and manufacturing costs can be greatly reduced.

By using the correction circuit 30103 shown in FIG. 80E under certain conditions, it is possible to prevent an inappropriate output image signal 30104 from being output. The conditions are an output image signal 30104 that gives an overdrive voltage and an input image signal 30101
The difference between a and the input image signal 30101b has linearity. The slope of this linearity is used as a coefficient to be multiplied by the multiplier 30112 . That is, it is preferable to use the correction circuit 30103 shown in FIG. 80(E) for the liquid crystal element having such properties. As a liquid crystal element having such properties, there is an IPS mode liquid crystal element whose response speed is less dependent on gradation. Thus, for example, by using the correction circuit 30103 shown in FIG. 80(E) in the IPS mode liquid crystal element, the manufacturing cost can be greatly reduced
Moreover, it is possible to obtain an overdrive circuit that can prevent outputting an inappropriate output image signal 30104 .

Note that functions equivalent to those of the circuits shown in (A) to (E) of FIG. 80 may be realized by software processing. For the memory used in the delay circuit, other memories in the liquid crystal display device, memory in the device that sends the image displayed on the liquid crystal display device (for example, a video card in a personal computer or similar device), etc. can be reused. By doing so, it is possible not only to reduce the manufacturing cost, but also to allow the user to select the strength of the overdrive, the situation of use, etc. according to his/her preference.

Next, the drive for manipulating the potential of the common line will be described with reference to FIG. ( in FIG. 81)
A) shows a plurality of pixel circuits when one common line is arranged for one scanning line in a display device using a display element having capacitive properties such as a liquid crystal element. It is a diagram. The pixel circuit shown in FIG. 81A includes a transistor 30201, an auxiliary capacitor 30202, a display element 30203, a video signal line 30204, a scanning line 30205, and a common line 30206.

A gate electrode of the transistor 30201 is electrically connected to the scan line 30205, one of the source electrode and the drain electrode of the transistor 30201 is electrically connected to the video signal line 30204, and the other of the source electrode and the drain electrode of the transistor 30201 is electrically connected to the video signal line 30204. is electrically connected to one electrode of the auxiliary capacitor 30202 and one electrode of the display element 30203 .
Also, the other electrode of the auxiliary capacitor 30202 is electrically connected to the common line 30206 .

First, since the transistor 30201 of the pixel selected by the scanning line 30205 is turned on, the display element 30203 and the auxiliary capacitor 3 are connected via the video signal line 30204, respectively.
A voltage corresponding to the video signal is applied to 0202 . At this time, the video signal is transferred to the common line 30
206 to display the lowest gradation, or all the pixels connected to the common line 30206 to display the highest gradation, the pixel , there is no need to write the video signal through the video signal line 30204 respectively.
By changing the potential of the common line 30206 instead of writing the video signal through the video signal line 30204, the voltage applied to the display element 30203 can be changed.

Next, FIG. 81B shows a display device using a display element having a capacitive property such as a liquid crystal element, in which two common lines are arranged for one scanning line. FIG. 4 is a diagram showing a plurality of pixel circuits; The pixel circuit shown in FIG. 81B includes a transistor 30211, an auxiliary capacitor 30212, a display element 30213, a video signal line 30214, a scanning line 30215, a first common line 30216, and a second common line 30217. .

A gate electrode of the transistor 30211 is electrically connected to the scan line 30215, one of the source electrode and the drain electrode of the transistor 30211 is electrically connected to the video signal line 30214, and the other of the source electrode and the drain electrode of the transistor 30211 is electrically connected to the video signal line 30214. is electrically connected to one electrode of the auxiliary capacitor 30212 and one electrode of the display element 30213 .
Also, the other electrode of the auxiliary capacitor 30212 is electrically connected to the first common line 30216 .
In addition, the other electrode of the auxiliary capacitor 30212 is electrically connected to the second common line 30217 in the pixel adjacent to the pixel in question.

In the pixel circuit shown in FIG. 81B, the number of pixels electrically connected to one common line is small. Alternatively, by changing the potential of the second common line 30217, the frequency with which the voltage applied to the display element 30213 can be changed remarkably increases. Also, source inversion driving or dot inversion driving becomes possible. By source inversion driving or dot inversion driving, flicker can be suppressed while improving the reliability of the element.

Next, a scanning backlight will be described with reference to FIG. FIG. 82A is a diagram showing a scanning backlight in which cold cathode tubes are arranged side by side. The scanning backlight shown in FIG. 82A includes a diffusion plate 30301 and N cold cathode tubes 30302-1 to 30302-N. By arranging the N cold-cathode tubes 30302-1 to 30302-N side by side behind the diffusion plate 30301, the N cold-cathode tubes 30302-1 to 30302-N can be scanned while changing their brightness. can be done.

A change in brightness of each cold cathode tube during scanning will be described with reference to FIG. 82(C). First, the brightness of the cold cathode tube 30302-1 is changed for a certain period of time. Then, after that, the cold cathode tube 30
The luminance of the cold cathode tube 30302-2 arranged next to 302-1 is changed for the same period of time. In this way, the cold cathode tubes 30302-1 to 30302-N are sequentially changed in brightness. In addition, in FIG. 82C, the luminance to be changed for a certain period of time is lower than the original luminance, but it may be higher than the original luminance. In addition, cold cathode tubes 30302-1 to 3030
Although scanning is performed up to 2-N, scanning may be performed in the opposite direction from cold cathode tubes 30302-N to 30302-1.

By driving as shown in FIG. 82, the average brightness of the backlight can be reduced. Therefore, the power consumption of the backlight, which accounts for most of the power consumption of the liquid crystal display device, can be reduced.

Note that an LED may be used as the light source of the scanning backlight. The scanning backlight in that case is as shown in FIG. 82(B). The scanning backlight shown in FIG. 82B includes a diffusion plate 30311 and light sources 30312-1 to 30312-N in which LEDs are arranged side by side. When LEDs are used as the light source of the scanning backlight, the backlight is thin,
It has the advantage of being lighter. There is also the advantage that the color reproduction range can be widened. Furthermore, the LEs juxtaposed with each of the juxtaposed LED light sources 30312-1 to 30312-N
Since D can also be scanned in the same way, it can be a point scanning type backlight.
If it is of the point scanning type, the image quality of moving images can be further improved.

Even when LEDs are used as the light source of the backlight, they can be driven by changing the luminance as shown in FIG. 82(C).

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 9)
In this embodiment, various liquid crystal modes will be described.

First, various liquid crystal modes will be described with reference to cross-sectional views.

FIGS. 134A and 134B show schematic diagrams of cross sections in TN mode.

A liquid crystal layer 50100 is sandwiched between a first substrate 50101 and a second substrate 50102 which are arranged to face each other. A first electrode 501 is formed on the top surface of the first substrate 50101 .
05 is formed. A second electrode 50106 is formed on the upper surface of the second substrate 50102 . A first polarizing plate 50103 is arranged on the side of the first substrate 50101 opposite to the liquid crystal layer. A second polarizing plate 50104 is arranged on the side of the second substrate 50102 opposite to the liquid crystal layer. Note that the first polarizing plate 50103 and the second polarizing plate 50104 are arranged so as to form crossed Nicols.

The first polarizing plate 50103 may be arranged on the top surface of the first substrate 50101 . A second polarizer 50104 may be placed on top of the second substrate 50102 .

At least one (or both) of the first electrode 50105 and the second electrode 50106 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 134A is a schematic cross-sectional view when a voltage is applied to the first electrode 50105 and the second electrode 50106 (referred to as vertical electric field method). Since the liquid crystal molecules are aligned vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the first polarizing plate 5
0103 and the second polarizing plate 50104 are arranged so as to form crossed Nicols,
Light from the backlight cannot pass through the substrate. Therefore, black display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50105 and the second electrode 50106 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 134B is a schematic cross-sectional view when no voltage is applied to the first electrode 50105 and the second electrode 50106. FIG. Since the liquid crystal molecules are arranged horizontally and rotate in a plane, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50103 and the second polarizing plate 50104 are arranged in crossed Nicols, the light from the backlight passes through the substrate. Therefore, white display is performed. This is the so-called normally white mode.

A liquid crystal display device having the structure shown in FIGS. 134A and 134B can perform full-color display by providing a color filter. The color filter is the first substrate 50101
side or the second substrate 50102 side.

A known liquid crystal material may be used for the TN mode.

FIGS. 135A and 135B show schematic diagrams of cross sections in VA mode. The VA mode is a mode in which the liquid crystal molecules are oriented perpendicular to the substrate when no electric field is applied.

A liquid crystal layer 50200 is sandwiched between a first substrate 50201 and a second substrate 50202 which are arranged to face each other. A first electrode 502 is formed on the top surface of the first substrate 50201 .
05 is formed. A second electrode 50206 is formed on the upper surface of the second substrate 50202 . A first polarizing plate 50203 is arranged on the side of the first substrate 50201 opposite to the liquid crystal layer. A second polarizing plate 50204 is arranged on the side of the second substrate 50202 opposite to the liquid crystal layer. Note that the first polarizing plate 50203 and the second polarizing plate 50204 are arranged so as to form crossed Nicols.

The first polarizing plate 50203 may be arranged on the top surface of the first substrate 50201 . A second polarizer 50204 may be placed on top of the second substrate 50202 .

At least one (or both) of the first electrode 50205 and the second electrode 50206 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 135A is a schematic cross-sectional view when a voltage is applied to the first electrode 50205 and the second electrode 50206 (referred to as vertical electric field method). Since the liquid crystal molecules are arranged horizontally, the light from the backlight is affected by the birefringence of the liquid crystal molecules. And the first polarizing plate 50
Since 203 and the second polarizing plate 50204 are arranged in crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50205 and the second electrode 50206 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 135B is a schematic cross-sectional view when no voltage is applied to the first electrode 50205 and the second electrode 50206. FIG. Since the liquid crystal molecules are aligned vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 50203 and the second
and the polarizing plate 50204 are arranged so as to form crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the structure shown in FIGS. 135A and 135B can perform full-color display by providing a color filter. The color filter is the first substrate 50201
side or the second substrate 50202 side.

A known liquid crystal material may be used for the VA mode.

FIGS. 135C and 135D show schematic diagrams of cross sections in the MVA mode. The MVA mode is a method of mutually compensating the viewing angle dependence of each part.

A liquid crystal layer 50210 is sandwiched between a first substrate 50211 and a second substrate 50212 which are arranged to face each other. A first electrode 502 is formed on the top surface of the first substrate 50211 .
15 are formed. A second electrode 50216 is formed on the upper surface of the second substrate 50212 . A first protrusion 502117 is formed on the first electrode 50215 for orientation control. A second protrusion 502118 is formed on the second electrode 50216 for orientation control. A first polarizing plate 50213 is provided on the side of the first substrate 50211 opposite to the liquid crystal layer.
are placed. A second polarizing plate 5021 is provided on the side of the second substrate 50212 opposite to the liquid crystal layer.
4 are placed. Note that the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to form crossed Nicols.

The first polarizing plate 50213 may be arranged on the top surface of the first substrate 50211 . A second polarizer 50214 may be placed on top of the second substrate 50212 .

At least one (or both) of the first electrode 50215 and the second electrode 50216 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 135C is a schematic cross-sectional view when a voltage is applied to the first electrode 50215 and the second electrode 50216 (referred to as vertical electric field method). Liquid crystal molecules are the first projections 502117
and the second protrusion 502118, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50213 and the second polarizing plate 50214 are arranged in crossed Nicols, the light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50215 and the second electrode 50216 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 135D is a schematic cross-sectional view when no voltage is applied to the first electrode 50215 and the second electrode 50216. FIG. Since the liquid crystal molecules are aligned vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 50213 and the second
and the polarizing plates 50214 are arranged so as to form crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is the so-called normally black mode.

The liquid crystal display devices having the structures shown in FIGS. 135C and 135D can perform full-color display by providing color filters. The color filter is the first substrate 50211
side or the second substrate 50212 side.

A known liquid crystal material may be used for the MVA mode.

FIGS. 136A and 136B show schematic diagrams of cross sections in the OCB mode. In the OCB mode, the alignment of liquid crystal molecules in the liquid crystal layer forms an optically compensated state, so viewing angle dependency is small. This state of liquid crystal molecules is called bend alignment.

A liquid crystal layer 50300 is sandwiched between a first substrate 50301 and a second substrate 50302 which are arranged to face each other. A first electrode 503 is formed on the top surface of the first substrate 50301 .
05 is formed. A second electrode 50306 is formed on the upper surface of the second substrate 50302 . A first polarizing plate 50303 is arranged on the side of the first substrate 50301 opposite to the liquid crystal layer. A second polarizing plate 50304 is arranged on the side of the second substrate 50302 opposite to the liquid crystal layer. Note that the first polarizing plate 50303 and the second polarizing plate 50304 are arranged so as to form crossed Nicols.

The first polarizing plate 50303 may be arranged on the top surface of the first substrate 50301 . A second polarizer 50304 may be placed on top of the second substrate 50302 .

At least one (or both) of the first electrode 50305 and the second electrode 50306 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 136A is a schematic diagram of a cross section when a voltage is applied to the first electrode 50305 and the second electrode 50306 (referred to as vertical electric field method). Since the liquid crystal molecules are aligned vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the first polarizing plate 5
0303 and the second polarizing plate 50304 are arranged so as to form crossed Nicols,
Light from the backlight does not pass through the substrate. Therefore, black display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50305 and the second electrode 50306 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 136B is a schematic cross-sectional view when no voltage is applied to the first electrode 50305 and the second electrode 50306. FIG. Since the liquid crystal molecules are in a bend alignment state, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 50303 and the second
and the polarizing plates 50304 are arranged so as to form crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed. This is the so-called normally white mode.

The liquid crystal display device having the structure shown in FIGS. 136A and 136B can perform full-color display by providing a color filter. The color filter is the first substrate 50301
side or the second substrate 50302 side.

A known liquid crystal material may be used for the OCB mode.

FIGS. 136C and 136D show schematic views of cross sections in FLC mode or AFLC mode.

A liquid crystal layer 50310 is sandwiched between a first substrate 50311 and a second substrate 50312 which are arranged to face each other. A first electrode 503 is formed on the top surface of the first substrate 50311 .
15 are formed. A second electrode 50316 is formed on the upper surface of the second substrate 50312 . A first polarizing plate 50313 is arranged on the side of the first substrate 50311 opposite to the liquid crystal layer. A second polarizing plate 50314 is arranged on the side of the second substrate 50312 opposite to the liquid crystal layer. Note that the first polarizing plate 50313 and the second polarizing plate 50314 are arranged so as to form crossed Nicols.

The first polarizing plate 50313 may be arranged on the top surface of the first substrate 50311 . A second polarizer 50314 may be placed on top of the second substrate 50312 .

At least one (or both) of the first electrode 50315 and the second electrode 50316 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 136C is a schematic cross-sectional view when a voltage is applied to the first electrode 50315 and the second electrode 50316 (referred to as a vertical electric field method). Since the liquid crystal molecules are arranged side by side in a direction deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50313 and the second polarizing plate 50314 are arranged in crossed Nicols, the light from the backlight passes through the substrate. therefore,
A white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50315 and the second electrode 50316 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 136D is a schematic cross-sectional view when no voltage is applied to the first electrode 50315 and the second electrode 50316. FIG. Since the liquid crystal molecules are aligned horizontally along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50313 and the second polarizing plate 50314 are arranged in crossed Nicols, the light from the backlight does not pass through the substrate. Therefore, black display is performed. This is the so-called normally black mode.

The liquid crystal display devices having the structures shown in FIGS. 136C and 136D can perform full-color display by providing color filters. The color filter is the first substrate 50311
side or the second substrate 50312 side.

A known liquid crystal material may be used for the FLC mode or AFLC mode.

FIGS. 137A and 137B show schematic diagrams of cross sections in IPS mode. In the IPS mode, the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, so the liquid crystal molecules are always rotated in the plane with respect to the substrate, and the electrodes are placed only on one substrate side. A horizontal electric field method is adopted.

A liquid crystal layer 50400 is sandwiched between a first substrate 50401 and a second substrate 50402 which are arranged to face each other. A first electrode 504 is formed on the top surface of the first substrate 50401 .
05 and a second electrode 50406 are formed. A first polarizing plate 50403 is arranged on the side of the first substrate 50401 opposite to the liquid crystal layer. A second polarizing plate 50404 is arranged on the side of the second substrate 50402 opposite to the liquid crystal layer. Note that the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to form crossed Nicols.

The first polarizing plate 50403 may be arranged on the top surface of the first substrate 50401 . A second polarizer 50404 may be placed on top of the second substrate 50402 .

At least one (or both) of the first electrode 50405 and the second electrode 50406 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 137A is a schematic cross-sectional view when a voltage is applied to the first electrode 50405 and the second electrode 50406 (referred to as vertical electric field method). Since the liquid crystal molecules are aligned along the electric lines of force that deviate from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged in crossed Nicols, the light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50405 and the second electrode 50406 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 137B is a schematic cross-sectional view when no voltage is applied to the first electrode 50405 and the second electrode 50406. FIG. Since the liquid crystal molecules are aligned horizontally along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged in crossed Nicols, the light from the backlight does not pass through the substrate. Therefore, black display is performed. This is the so-called normally black mode.

The liquid crystal display device having the structure shown in FIGS. 137A and 137B can perform full-color display by providing a color filter. The color filter is the first substrate 50401
side or the second substrate 50402 side.

A known liquid crystal material may be used for the IPS mode.

FIGS. 137C and 137D show schematic diagrams of cross sections in the FFS mode. The FFS mode is a mode in which the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, so the liquid crystal molecules are always rotated in the plane with respect to the substrate, and the electrodes are placed only on one substrate side. A horizontal electric field method is adopted.

A liquid crystal layer 50410 is sandwiched between a first substrate 50411 and a second substrate 50412 which are arranged to face each other. A second electrode 504 is formed on the top surface of the first substrate 50411 .
16 are formed. An insulating film 50417 is formed on the upper surface of the second electrode 50416 . A second electrode 50416 is formed over the insulating film 50417 . A first polarizing plate 50413 is arranged on the side of the first substrate 50411 opposite to the liquid crystal layer. A second polarizing plate 50414 is arranged on the side of the second substrate 50412 opposite to the liquid crystal layer. note that,
The first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to form crossed Nicols.

The first polarizing plate 50413 may be arranged on the top surface of the first substrate 50411 . A second polarizer 50414 may be placed on top of the second substrate 50412 .

At least one (or both) of the first electrode 50415 and the second electrode 50416 should be translucent (transmissive or reflective). Alternatively, both electrodes may be translucent and part of one electrode may be reflective (transflective).

FIG. 137C is a schematic cross-sectional view when a voltage is applied to the first electrode 50415 and the second electrode 50416 (referred to as a vertical electric field method). Since the liquid crystal molecules are aligned along the electric lines of force that deviate from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged in crossed Nicols, the light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50415 and the second electrode 50416 . Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

FIG. 137D is a schematic cross-sectional view when no voltage is applied to the first electrode 50415 and the second electrode 50416. FIG. Since the liquid crystal molecules are aligned horizontally along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged in crossed Nicols, the light from the backlight does not pass through the substrate. Therefore, black display is performed. This is the so-called normally black mode.

The liquid crystal display devices having the structures shown in FIGS. 137C and 137D can perform full-color display by providing color filters. The color filter is the first substrate 50411
side or the second substrate 50412 side.

A known liquid crystal material may be used for the FFS mode.

Next, various liquid crystal modes will be described with reference to top views.

FIG. 138 shows a top view of a pixel portion to which the MVA mode is applied. The MVA mode is a method of mutually compensating the viewing angle dependence of each part.

FIG. 138 shows a first pixel electrode 50501 and second pixel electrodes (50502a, 50502b).
, 50502c), and projections 50503 are shown. The first pixel electrode 50501 is
It is formed on the entire surface of the opposing substrate. The second pixel electrode (50
502a, 50502b, 50502c) are formed. The shape of the second pixel electrode (5
0502a, 50502b, 50502c), the first pixel electrode 5050
1, second pixel electrodes (50502a, 50502b, 50502c) are formed.

The openings of the second pixel electrodes (50502a, 50502b, 50502c) act like protrusions.

The first pixel electrode 50501 and the second pixel electrodes (50502a, 50502b, 5050
2c), when a voltage is applied (referred to as a vertical electric field method), the liquid crystal molecules move to the second pixel electrode (50
502a, 50502b, and 50502c) and the projection 50503, and fall side by side. When a pair of polarizing plates are arranged in crossed Nicols,
White display is performed because the light from the backlight passes through the substrate.

Note that the first pixel electrode 50501 and the second pixel electrodes (50502a, 50502b, 50502b,
By controlling the voltage applied to 0502c), it is possible to control the state of liquid crystal molecules. Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

The first pixel electrode 50501 and the second pixel electrodes (50502a, 50502b, 5050
When no voltage is applied to 2c), the liquid crystal molecules are aligned vertically. When a pair of polarizing plates are arranged in crossed Nicols, light from the backlight does not pass through the panel, resulting in black display. This is the so-called normally black mode.

A known liquid crystal material may be used for the MVA mode.

FIGS. 139A, 139B, 139C, and 139D show top views of the pixel portion to which the IPS mode is applied. In the IPS mode, the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, so the liquid crystal molecules are always rotated in the plane with respect to the substrate, and the electrodes are placed only on one substrate side. A horizontal electric field method is adopted.

In the IPS mode, a pair of electrodes are formed to have different shapes.

FIG. 139A shows a first pixel electrode 50601 and a second pixel electrode 50602. FIG. The first pixel electrode 50601 and the second pixel electrode 50602 have a wavy shape.

FIG. 139B shows a first pixel electrode 50611 and a second pixel electrode 50612. FIG. The first pixel electrode 50611 and the second pixel electrode 50612 have concentric openings.

FIG. 139C shows a first pixel electrode 50631 and a second pixel electrode 50632. FIG. The first pixel electrode 50631 and the second pixel electrode 50632 are comb-like and partially overlapped.

FIG. 139D shows a first pixel electrode 50641 and a second pixel electrode 50642. FIG. The first pixel electrode 50641 and the second pixel electrode 50642 are comb-shaped and have a shape in which the electrodes are engaged with each other.

The first electrodes (50601, 50611, 50621, 50631) and the second electrodes (50
602, 50612, 50622, 50632), the liquid crystal molecules are oriented along the electric lines of force deviated from the rubbing direction. When the pair of polarizing plates are arranged in crossed Nicols, the light from the backlight passes through the substrate, so white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling voltages applied to the first electrodes (50601, 50611, 50621, 50631) and the second electrodes (50602, 50612, 50622, 50632). be. Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

The first electrodes (50601, 50611, 50621, 50631) and the second electrodes (50
602, 50612, 50622, 50632), the liquid crystal molecules are aligned horizontally along the rubbing direction. When a pair of polarizing plates are arranged in crossed Nicols, light from the backlight does not pass through the substrate, resulting in black display. This is the so-called normally black mode.

A known liquid crystal material may be used for the IPS mode.

FIGS. 140A, 140B, 140C, and 140D show top views of pixel portions to which the FFS mode is applied. The FFS mode is a mode in which the alignment of the liquid crystal molecules in the liquid crystal layer forms an optically compensated state, so the liquid crystal molecules are always rotated in the plane with respect to the substrate, and the electrodes are placed only on one substrate side. A horizontal electric field method is adopted.

In the FFS mode, the first electrodes are formed in various shapes on top of the second electrodes.

FIG. 140A shows a first pixel electrode 50701 and a second pixel electrode 50702. FIG. The first pixel electrode 50701 has a bent dogleg shape. Second pixel electrode 5070
2 may be unpatterned.

FIG. 140B shows a first pixel electrode 50711 and a second pixel electrode 50712. FIG. The first pixel electrode 50711 has a concentric shape. The second pixel electrode 50712 may not be patterned.

FIG. 140C shows a first pixel electrode 50731 and a second pixel electrode 50732. FIG. The first pixel electrode 50731 has a shape such that the electrodes are meshed with each other in a comb shape. second
, the pixel electrode 50732 may not be patterned.

FIG. 140D shows a first pixel electrode 50741 and a second pixel electrode 50742. FIG. The first pixel electrode 50741 has a comb field shape. The second pixel electrode 50742 is
It does not have to be patterned.

The first electrodes (50701, 50711, 50721, 50731) and the second electrodes (50
702, 50712, 50722, 50732), the liquid crystal molecules are oriented along the electric lines of force deviating from the rubbing direction. When the pair of polarizing plates are arranged in crossed Nicols, the light from the backlight passes through the substrate, so white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling voltages applied to the first electrodes (50701, 50711, 50721, 50731) and the second electrodes (50702, 50712, 50722, 50732). be. Therefore, since the amount of light from the backlight that passes through the substrate can be controlled, it is possible to display a predetermined image.

The first electrodes (50701, 50711, 50721, 50731) and the second electrodes (50
702, 50712, 50722, 50732), the liquid crystal molecules are aligned horizontally along the rubbing direction. When a pair of polarizing plates are arranged in crossed Nicols, light from the backlight does not pass through the substrate, resulting in black display. This is the so-called normally black mode.

A known liquid crystal material may be used for the IPS mode.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 10)
In this embodiment mode, a pixel structure of a display device will be described. In particular, the pixel structure of the liquid crystal display device will be described.

A pixel structure in which each liquid crystal mode and a transistor are combined will be described with reference to cross-sectional views of pixels.

Note that as the transistor, a thin film transistor (TFT) including a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystalline or semi-amorphous) silicon, or the like can be used.

Note that as a structure of the transistor, a top-gate type, a bottom-gate type, or the like can be used. Note that a channel-etched transistor, a channel-protected transistor, or the like can be used as the bottom-gate transistor.

FIG. 85 is an example of a cross-sectional view of a pixel in which the TN method and a transistor are combined.
By applying the pixel structure shown in FIG. 85 to a liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

Features of the pixel structure shown in FIG. 85 will be described. Liquid crystal molecules 10118 shown in FIG.
It is an elongated molecule with a long and short axis. In order to indicate the orientation of the liquid crystal molecules 10118, they are represented by their lengths in FIG. That is, the liquid crystal molecules 1011 expressed as long
8 has its long axis parallel to the plane of the paper, and the shorter the liquid crystal molecule 10118 is expressed, the closer the direction of its long axis is to the normal direction of the plane of paper. That is, the liquid crystal molecules 10118 shown in FIG. liquid crystal molecules 101
The direction of the long axis of 18 is such that they are smoothly connected. That is, the liquid crystal molecules 10118 shown in FIG.
It is in an orientation state that seems to be twisted.

Note that the case where a bottom-gate transistor including an amorphous semiconductor is used as the transistor is described. When a transistor including an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost using a large substrate.

A liquid crystal display device has a main part that displays an image, called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates together with a gap of several micrometers.
It is made by injecting a liquid crystal material between two substrates. In FIG. 85, the two substrates are
A first substrate 10101 and a second substrate 10116 . A transistor and a pixel electrode are formed on the first substrate. A light shielding film 10114 and a color filter 101 are formed on the second substrate.
15, a fourth conductive layer 10113, spacers 10117 and a second alignment film 10112 are formed.

Note that the light shielding film 10114 may not be formed over the second substrate 10116 . Light shielding film 1
If 0114 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1011
4, it is possible to obtain a display device with less light leakage during black display.

Note that the color filter 10115 may not be formed over the second substrate 10116 .
If the color filter 10115 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. However, even if the color filter 10115 is not formed, a display device capable of color display can be obtained by field sequential driving. On the other hand, the color filter 1011
5, a display device capable of color display can be obtained.

Note that spherical spacers may be scattered instead of the spacers 10117 . When spherical spacers are scattered, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, when the spacers 10117 are formed, since the positions of the spacers do not fluctuate, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10101 will be described.

First, a first insulating film 10102 is formed on a first substrate 10101 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10102 may not be formed. The first insulating film 10102 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, a first conductive layer 10103 is formed on the first insulating film 10102 by photolithography,
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, a second insulating film 10104 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. The second insulating film 10104 is such that impurities from the substrate affect the semiconductor layer,
It has the function of preventing the property of the transistor from changing.

Next, a first semiconductor layer 10105 and a second semiconductor layer 10106 are formed. Note that the first semiconductor layer 10105 and the second semiconductor layer 10106 are formed continuously and their shapes are processed at the same time.

Next, a second conductive layer 10107 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Dry etching is preferable as an etching method for processing the shape of the second conductive layer 10107 . note that,
As the second conductive layer 10107, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10106 is etched using the second conductive layer 10107 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10107 . A portion of the first conductive layer 10103 from which the second semiconductor layer 10106 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so the manufacturing cost can be reduced.

Next, a third insulating film 10108 is formed, and contact holes are selectively formed in the third insulating film 10108 . Note that a contact hole may be formed in the second insulating film 10104 at the same time that the contact hole is formed in the third insulating film 10108 . note that,
It is preferable that the surface of the third insulating film 10108 is as flat as possible. This is because the alignment of the liquid crystal molecules is affected by the unevenness of the surface with which the liquid crystal is in contact.

Next, a third conductive layer 10109 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a first alignment film 10110 is formed. After forming the first alignment film 10110,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of rubbing the alignment film with a cloth to form streaks on the alignment film. By performing rubbing, the orientation film can be given orientation.

The first substrate 10101 manufactured as described above, the light shielding film 10114, and the color filter 10
115, a fourth conductive layer 10113, a spacer 10117, and a second substrate 10116 having a second alignment film 10112 formed thereon are bonded with a sealing material with a gap of several micrometers. A liquid crystal material is then injected between the two substrates. Note that the fourth conductive layer 10113 is formed over the entire surface of the second substrate 10116 in the TN method.

FIG. 86(A) shows MVA (Multi-domain Vertical Alignment
ent) is an example of a cross-sectional view of a pixel when the method and a transistor are combined. Figure 86
By applying the pixel structure shown in (A) to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a fast response speed, and a high contrast can be obtained.

Features of the pixel structure shown in FIG. 86A will be described. The features of the pixel structure of the MVA liquid crystal panel will be described. A liquid crystal molecule 10218 shown in FIG. 86A is an elongated molecule having a long axis and a short axis. In order to indicate the orientation of the liquid crystal molecules 10218, they are represented by their lengths in FIG. 86(A). That is, the liquid crystal molecule 10218 expressed as long is
It is assumed that the direction of the long axis is parallel to the plane of the paper, and the shorter the liquid crystal molecule 10218 is represented, the closer the direction of the long axis is to the normal direction of the plane of the paper. In other words, the liquid crystal molecules 10218 shown in FIG. 86A are oriented such that the direction of the long axis is directed to the normal direction of the orientation film. Therefore, the liquid crystal molecules 10218 in the portion where the alignment control protrusions 10219 are located are aligned with the alignment control protrusions 102
It is oriented radially with 19 as the center. With this state, a liquid crystal display device with a wide viewing angle can be obtained.

Note that the case where a bottom-gate transistor including an amorphous semiconductor is used as the transistor is described. When a transistor including an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost using a large substrate.

A liquid crystal display device has a main part that displays an image, called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates together with a gap of several micrometers.
It is made by injecting a liquid crystal material between two substrates. In FIG. 86A, the two substrates are a first substrate 10201 and a second substrate 10216. In FIG. A transistor and a pixel electrode are formed on the first substrate. A second substrate includes a light shielding film 10214, a color filter 10215, a fourth conductive layer 10213, a spacer 10217, and a second alignment film 1021.
2, and orientation control projections 10219 are formed.

Note that the light shielding film 10214 may not be formed over the second substrate 10216 . Light shielding film 1
If 0214 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1021
4, it is possible to obtain a display device with less light leakage during black display.

Note that the color filter 10215 may not be formed over the second substrate 10216 .
If the color filter 10215 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. However, even if the color filter 10215 is not manufactured, a display device capable of color display can be obtained by field sequential driving. On the other hand, the color filter 1021
5, a display device capable of color display can be obtained.

Note that spherical spacers may be scattered on the second substrate 10216 instead of the spacers 10217 . When spherical spacers are scattered, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacers 10217 are formed, since the positions of the spacers do not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10201 will be described.

First, a first insulating film 10202 is formed on a first substrate 10201 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10202 may not be formed. The first insulating film 10202 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, a first conductive layer 10203 is formed on the first insulating film 10202 by photolithography,
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, a second insulating film 10204 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. The second insulating film 10204 is such that impurities from the substrate affect the semiconductor layer,
It has the function of preventing the property of the transistor from changing.

Next, a first semiconductor layer 10205 and a second semiconductor layer 10206 are formed. Note that the first semiconductor layer 10205 and the second semiconductor layer 10206 are formed continuously and their shapes are processed at the same time.

Next, a second conductive layer 10207 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferably used as an etching method for processing the shape of the second conductive layer 10207 . note that,
As the second conductive layer 10207, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10206 is etched using the second conductive layer 10207 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10207 . A portion of the first conductive layer 10203 where the second semiconductor layer 10206 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so the manufacturing cost can be reduced.

Next, a third insulating film 10208 is formed, and contact holes are selectively formed in the third insulating film 10208 . Note that contact holes may be formed in the second insulating film 10204 at the same time that the contact holes are formed in the third insulating film 10208 .

Next, a third conductive layer 10209 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a first alignment film 10210 is formed. After forming the first alignment film 10210,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of rubbing the alignment film with a cloth to form streaks on the alignment film. By performing rubbing, the orientation film can be given orientation.

The first substrate 10201 manufactured as described above, the light shielding film 10214, and the color filter 10
215, the fourth conductive layer 10213, the spacer 10217, and the second substrate 10216 on which the second alignment film 10212 is formed are bonded with a sealing material with a gap of several micrometers. A liquid crystal material is then injected between the two substrates. In addition, MVA
In this method, the fourth conductive layer 10213 is formed on the entire surface of the second substrate 10216 .
Note that an alignment control projection 10219 is formed in contact with the fourth conductive layer 10213 .
The shape of the orientation control projection 10219 is preferably a shape with a smooth curved surface.
By doing so, the alignment of adjacent liquid crystal molecules 10218 becomes very close, so that alignment defects can be reduced. It is possible to reduce the defects of the alignment film caused by the discontinuity of the alignment film.

FIG. 86(B) shows PVA (Patterned Vertical Alignment)
FIG. 10 is an example of a cross-sectional view of a pixel in which a method and a transistor are combined; By applying the pixel structure shown in FIG. 86B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a fast response speed, and a high contrast can be obtained.

Features of the pixel structure shown in FIG. 86B will be described. Liquid crystal molecule 1 shown in FIG. 86(B)
0248 is an elongated molecule with a long and short axis. In order to indicate the orientation of the liquid crystal molecules 10248, they are represented by their lengths in FIG. 86(B). That is, it is assumed that the liquid crystal molecules 10248 represented longer have their major axes parallel to the plane of the paper, and the liquid crystal molecules 10248 represented shorter have their major axes oriented closer to the normal to the plane of the paper. . That is, the liquid crystal molecules 10248 shown in FIG. 86(B) are oriented so that the direction of the long axis is oriented in the normal direction of the orientation film. Therefore, the liquid crystal molecules 10248 in the portion with the electrode cutout 10249
are oriented radially around the boundary between the electrode cutout portion 10249 and the fourth conductive layer 10243 . With this state, a liquid crystal display device with a wide viewing angle can be obtained.

Note that the case where a bottom-gate transistor including an amorphous semiconductor is used as the transistor is described. When a transistor including an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost using a large substrate.

A liquid crystal display device has a main part that displays an image, called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates together with a gap of several micrometers.
It is made by injecting a liquid crystal material between two substrates. In FIG. 86B, the two substrates are a first substrate 10231 and a second substrate 10246. In FIG. A transistor and a pixel electrode are formed on the first substrate. A second substrate includes a light shielding film 10244, a color filter 10245, a fourth conductive layer 10243, a spacer 10247, and a second alignment film 1.
0242 is formed.

Note that the light shielding film 10244 may not be formed over the second substrate 10246 . Light shielding film 1
If 0244 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1024
4, it is possible to obtain a display device with less light leakage during black display.

Note that the color filter 10245 may not be formed over the second substrate 10246 .
If the color filter 10245 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. However, even if the color filter 10245 is not manufactured, a display device capable of color display can be obtained by field sequential driving. On the other hand, the color filter 1024
5, a display device capable of color display can be obtained.

Note that spherical spacers may be scattered on the second substrate 10246 instead of the spacers 10247 . When spherical spacers are scattered, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacers 10247 are formed, since the positions of the spacers do not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing applied to the first substrate 10231 will be described.

First, a first insulating film 10232 is formed on a first substrate 10231 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10232 may not be formed. The first insulating film 10232 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, a first conductive layer 10233 is formed on the first insulating film 10232 by photolithography,
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, a second insulating film 10234 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. The second insulating film 10234 is such that impurities from the substrate affect the semiconductor layer,
It has the function of preventing the property of the transistor from changing.

Next, a first semiconductor layer 10235 and a second semiconductor layer 10236 are formed. Note that the first semiconductor layer 10235 and the second semiconductor layer 10236 are formed continuously, and their shapes are processed at the same time.

Next, a second conductive layer 10237 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Note that dry etching is preferably used as an etching method for processing the shape of the second conductive layer 10237 . note that,
As the second conductive layer 10237, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10236 is etched using the second conductive layer 10237 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10237 . A portion of the first conductive layer 10233 from which the second semiconductor layer 10236 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so the manufacturing cost can be reduced.

Next, a third insulating film 10238 is formed, and contact holes are selectively formed in the third insulating film 10238 . Note that a contact hole may be formed in the second insulating film 10234 at the same time that the contact hole is formed in the third insulating film 10238 . note that,
The surface of third insulating film 10238 is preferably as flat as possible. This is because the alignment of the liquid crystal molecules is affected by the unevenness of the surface with which the liquid crystal is in contact.

Next, a third conductive layer 10239 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a first alignment film 10240 is formed. After forming the first alignment film 10240,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of rubbing the alignment film with a cloth to form streaks on the alignment film. By performing rubbing, the orientation film can be given orientation.

The first substrate 10231 manufactured as described above, the light shielding film 10244, and the color filter 10
245, the fourth conductive layer 10243, the spacer 10247, and the second substrate 10246 on which the second alignment film 10242 is formed are bonded with a sealing material with a gap of several micrometers. A liquid crystal material is then injected between the two substrates. In addition, PVA
In this method, the fourth conductive layer 10243 is patterned and the electrode notch 10249 is formed.
is formed. Although the shape of the electrode cutout portion 10249 is not limited, it is preferable that the shape is a combination of a plurality of rectangles with different orientations. By doing so, a plurality of regions with different orientations can be formed, so that a liquid crystal display device with a wide viewing angle can be obtained. Note that the fourth conductive layer 10 at the boundary between the electrode notch portion 10249 and the fourth conductive layer 10243
The shape of 243 is preferably a smooth curve. By doing so, the alignment of adjacent liquid crystal molecules 10248 becomes extremely close, so that alignment defects are reduced. Second alignment film 10
242 can also reduce defects in the alignment film due to the electrode notch 10249 causing step disconnection.

FIG. 87A is an example of a cross-sectional view of a pixel in which an IPS (In-Plane-Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 87A to a liquid crystal display device, a liquid crystal display device with a large viewing angle and a small gradation dependency of response speed can be obtained in principle.

Features of the pixel structure shown in FIG. 87A will be described. Liquid crystal molecule 1 shown in FIG. 87(A)
0318 is an elongated molecule with a long axis and a short axis. In order to indicate the orientation of the liquid crystal molecules 10318, they are represented by their lengths in FIG. 87(A). That is, the long axis of the liquid crystal molecule 10318 is parallel to the plane of the paper, and the shorter the liquid crystal molecule 10318 is, the closer the long axis is to the normal to the plane of the paper. . That is, the liquid crystal molecules 10318 shown in FIG. 87(A) are oriented so that their long axes are always parallel to the substrate. FIG. 87(A) shows the orientation in the absence of an electric field, but when an electric field is applied to the liquid crystal molecules 10318, the direction of the long axis is always kept parallel to the substrate, and the orientation is in the horizontal plane. to rotate. With this state, a liquid crystal display device with a wide viewing angle can be obtained.

Note that the case where a bottom-gate transistor including an amorphous semiconductor is used as the transistor is described. When a transistor including an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost using a large substrate.

A liquid crystal display device has a main part that displays an image, called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates together with a gap of several micrometers.
It is made by injecting a liquid crystal material between two substrates. In FIG. 87A, the two substrates are a first substrate 10301 and a second substrate 10316. In FIG. A transistor and a pixel electrode are formed on the first substrate. A light shielding film 10314, a color filter 10315, a spacer 10317, and a second alignment film 10312 are formed on the second substrate.

Note that the light shielding film 10314 may not be formed over the second substrate 10316 . Light shielding film 1
If 0314 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1031
4, it is possible to obtain a display device with less light leakage during black display.

Note that the color filter 10315 may not be formed over the second substrate 10316 .
If the color filter 10315 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. However, even if the color filter 10315 is not formed, a display device capable of color display can be obtained by field sequential driving. Since the structure is simple, the yield can be improved. On the other hand, the color filter 1031
5, a display device capable of color display can be obtained.

Note that spherical spacers may be scattered on the second substrate 10316 instead of the spacers 10317 . When spherical spacers are scattered, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacers 10317 are formed, since the positions of the spacers do not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10301 will be described.

First, a first insulating film 10302 is formed on a first substrate 10301 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10302 may not be formed. The first insulating film 10302 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, a first conductive layer 10303 is formed on the first insulating film 10302 by photolithography,
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, a second insulating film 10304 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. The second insulating film 10304 is such that impurities from the substrate affect the semiconductor layer,
It has the function of preventing the property of the transistor from changing.

Next, a first semiconductor layer 10305 and a second semiconductor layer 10306 are formed. Note that the first semiconductor layer 10305 and the second semiconductor layer 10306 are formed continuously and their shapes are processed at the same time.

Next, a second conductive layer 10307 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferably used as an etching method for processing the shape of the second conductive layer 10307 . note that,
As the second conductive layer 10307, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10306 is etched using the second conductive layer 10307 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10307 . A portion of the first conductive layer 10303 from which the second semiconductor layer 10306 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so the manufacturing cost can be reduced.

Next, a third insulating film 10308 is formed, and contact holes are selectively formed in the third insulating film 10308 . Note that contact holes may be formed in the second insulating film 10304 at the same time that the contact holes are formed in the third insulating film 10308 .

Next, a third conductive layer 10309 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Here, the shape of the third conductive layer 10309 is two comb teeth that are meshed with each other. One comb-shaped electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and the other comb-shaped electrode is electrically connected to a common electrode. By doing so, a horizontal electric field can be effectively applied to the liquid crystal molecules 10318 .

Next, a first alignment film 10310 is formed. After forming the first alignment film 10310,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of rubbing the alignment film with a cloth to form streaks on the alignment film. By performing rubbing, the orientation film can be given orientation.

The first substrate 10301 manufactured as described above, the light shielding film 10314, and the color filter 10
315, spacer 10317, and second alignment film 10312 are bonded with a sealing material with a gap of several micrometers. A liquid crystal material is then injected between the two substrates.

FIG. 87B is an example of a cross-sectional view of a pixel in which a fringe field switching (FFS) method and a transistor are combined. By applying the pixel structure shown in FIG. 87B to a liquid crystal display device, a liquid crystal display device with a large viewing angle and a small gradation dependency of response speed can be obtained in principle.

Features of the pixel structure shown in FIG. 89B will be described. Liquid crystal molecule 1 shown in FIG. 89(B)
0348 is an elongated molecule with a long axis and a short axis. In order to indicate the orientation of the liquid crystal molecules 10348, they are represented by their lengths in FIG. 89(B). That is, the long axis of the liquid crystal molecule 10348 is parallel to the plane of the paper, and the shorter the liquid crystal molecule 10348 is, the closer the long axis is to the normal to the plane of the paper. . That is, the liquid crystal molecules 10348 shown in FIG. 89(B) are oriented such that the direction of the long axis is always parallel to the substrate. FIG. 89(B) shows the orientation in the absence of an electric field, but when an electric field is applied to the liquid crystal molecules 10348, the direction of the long axis is always kept parallel to the substrate, and the orientation is in the horizontal plane. to rotate. With this state, a liquid crystal display device with a wide viewing angle can be obtained.

Note that the case where a bottom-gate transistor including an amorphous semiconductor is used as the transistor is described. When a transistor including an amorphous semiconductor is used, a liquid crystal display device can be manufactured at low cost using a large substrate.

A liquid crystal display device has a main part that displays an image, called a liquid crystal panel. The liquid crystal panel is made by bonding two processed substrates together with a gap of several micrometers.
It is made by injecting a liquid crystal material between two substrates. In FIG. 89B, the two substrates are a first substrate 10331 and a second substrate 10346. In FIG. A transistor and a pixel electrode are formed on the first substrate, and a light shielding film 10344 and a color filter 1 are formed on the second substrate.
0345, spacers 10347, and a second alignment film 10342 are formed.

Note that the light shielding film 10344 may not be formed on the second substrate 10346 . Light shielding film 1
If 0344 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1034
4, it is possible to obtain a display device with less light leakage during black display.

Note that the color filter 10345 may not be formed over the second substrate 10346 .
If the color filter 10345 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. However, even if the color filter 10345 is not formed, a display device capable of color display can be obtained by field sequential driving. On the other hand, the color filter 1034
5, a display device capable of color display can be obtained.

Note that spherical spacers may be scattered on the second substrate 10346 instead of the spacers 10347 . When spherical spacers are scattered, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacers 10347 are formed, since the positions of the spacers do not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10331 will be described.

First, a first insulating film 10332 is formed on a first substrate 10331 by a sputtering method, a printing method, a coating method, or the like. However, the first insulating film 10332 may not be formed. The first insulating film 10332 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the properties of the transistor.

Next, a first conductive layer 10333 is formed on the first insulating film 10332 by photolithography,
It is formed by a laser direct drawing method, an inkjet method, or the like.

Next, a second insulating film 10334 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. The second insulating film 10334 is such that impurities from the substrate affect the semiconductor layer,
It has the function of preventing the property of the transistor from changing.

Next, a first semiconductor layer 10335 and a second semiconductor layer 10336 are formed. Note that the first semiconductor layer 10335 and the second semiconductor layer 10336 are formed continuously and their shapes are processed at the same time.

Next, a second conductive layer 10337 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferably used as an etching method for processing the shape of the second conductive layer 10337 . note that,
As the second conductive layer 10337, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10336 is etched using the second conductive layer 10337 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10337 . A portion of the first conductive layer 10333 from which the second semiconductor layer 10336 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so the manufacturing cost can be reduced.

Next, a third insulating film 10338 is formed, and contact holes are selectively formed in the third insulating film 10338 .

Next, a fourth conductive layer 10343 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like.

Next, a fourth insulating film 10349 is formed, and contact holes are selectively formed in the fourth insulating film 10349 . Note that the surface of the fourth insulating film 10349 is preferably as flat as possible. This is because the alignment of the liquid crystal molecules is affected by the unevenness of the surface with which the liquid crystal is in contact.

Next, a third conductive layer 10339 is formed by a photolithography method, a laser direct writing method, an inkjet method, or the like. Here, the third conductive layer 10339 has a comb-like shape.

Next, a first alignment film 10340 is formed. After forming the first alignment film 10340,
Rubbing may be performed to control the orientation of the liquid crystal molecules. Rubbing is a process of rubbing the alignment film with a cloth to form streaks on the alignment film. By performing rubbing, the orientation film can be given orientation.

The first substrate 10331 manufactured as described above, the light shielding film 10344, and the color filter 10
345, a spacer 10347, and a second alignment film 10342 are bonded with a sealing material with a gap of several micrometers, and a liquid crystal material is injected between the two substrates, whereby a liquid crystal panel can be manufactured.

Here, materials that can be used for each conductive layer or each insulating film are described.

The first insulating film 10102 in FIG. 85, the first insulating film 10202 in FIG. 86A, and the first insulating film 10202 in FIG.
), the first insulating film 10302 in FIG. 87A, and the first insulating film 10332 in FIG. 87B, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film ( An insulating film such as SiOxNy) can be used. Alternatively, the first insulating film 101
02 can use an insulating film having a laminated structure in which two or more films such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) are combined.

The first conductive layer 10103 in FIG. 85, the first conductive layer 10203 in FIG.
), the first conductive layer 10303 in FIG. 87A, the first conductive layer 10303 in FIG. 87A, and the first conductive layer 10333 in FIG. Mo, Ti
, Al, Nd, Cr, or the like can be used. Alternatively, Mo, Ti, Al, Nd, C
A laminated structure combining two or more of r and the like can also be used.

The second insulating film 10104 in FIG. 85, the second insulating film 10204 in FIG.
), the second insulating film 10304 in FIG. 87A, and the second insulating film 10334 in FIG. A silicon nitride film or the like can be used. Alternatively, a laminated structure in which two or more of a thermal oxide film, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like is combined can be used. Note that the portion in contact with the semiconductor layer is preferably a silicon oxide film. This is because the silicon oxide film reduces the trap level at the interface with the semiconductor layer. Note that the portion in contact with Mo is preferably a silicon nitride film.
This is because the silicon nitride film does not oxidize Mo.

The first semiconductor layer 10105 in FIG. 85, the first semiconductor layer 10205 in FIG. 86A, and FIG.
The first semiconductor layer 10235 in (B), the first semiconductor layer 10305 in FIG. 87(A), and FIG.
As the first semiconductor layer 10335 of (B), silicon or silicon germanium (Si
Ge) and the like can be used.

The second semiconductor layer 10106 in FIG. 85, the second semiconductor layer 10206 in FIG. 86A, and FIG.
The second semiconductor layer 10236 in (B), the second semiconductor layer 10306 in FIG. 87(A), and FIG.
As the second semiconductor layer 10336 in (B), silicon containing phosphorus or the like can be used.

The second conductive layer 10107 and the third conductive layer 10109 in FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 86A, the second conductive layer 10237 in FIG. The second conductive layer 10239, the second conductive layer 10307 and the second conductive layer 1 in FIG.
0309, or as a transparent material for the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. (ITO) film, indium tin silicon oxide (ITSO) film in which silicon oxide is mixed with indium tin oxide (ITO), indium zinc oxide (IZO) film in which zinc oxide is mixed with indium oxide, zinc oxide film or oxide A tin film or the like can be used. Note that IZO is a transparent conductive material formed by sputtering using a target in which 2 to 20 wt % of zinc oxide (ZnO) is mixed with ITO.

The second conductive layer 10107 and the third conductive layer 10109 in FIG. 85, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 86A, the second conductive layer 10237 in FIG. The second conductive layer 10239, the second conductive layer 10307 and the second conductive layer 1 in FIG.
0309, or reflective materials for the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG.
, Al and the like can be used. Alternatively, a two-layer structure in which Ti, Mo, Ta, Cr, W and Al are laminated, or a three-layer structure in which Al is sandwiched between metals such as Ti, Mo, Ta, Cr and W may be used.

The third insulating film 10108 in FIG. 85, the third insulating film 10208 in FIG.
), the third conductive layer 10239 in FIG. 86B, the third insulating film 10308 in FIG. 87A, the third insulating film 10338 in FIG. insulating film 10
As 349, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, etc.) or a low dielectric constant organic compound material (photosensitive or non-photosensitive organic resin material) can be used. Alternatively, materials containing siloxane can be used. Note that siloxane is a material having a skeletal structure composed of a bond between silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents.

The first alignment film 10110 in FIG. 85, the first alignment film 10210 in FIG.
), the first alignment film 10310 in FIG. 86B, and the first alignment film 10340 in FIG. 87B, a polymer film such as polyimide can be used.

Next, a pixel structure when each liquid crystal mode and a transistor are combined will be described with reference to a top view (layout diagram) of a pixel.

Liquid crystal modes include TN (Twisted Nematic) mode, IPS (
In-Plane-Switching) mode, FFS (Fringe Field)
Switching) mode, MVA (Multi-domain Vertical)
alignment) mode, PVA (Patterned Vertical Ali
gnment), ASM (Axially Symmetrically aligned Mi
cro-cell) mode, OCB (Optical Compensated Bir
efringence) mode, FLC (Ferroelectric Liquid
Crystal) mode, AFLC (Anti-Ferroelectric Liqui
d Crystal) and the like can be used.

Note that as the transistor, a thin film transistor (TFT) including a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as microcrystalline or semi-amorphous) silicon, or the like can be used.

Note that as a structure of the transistor, a top-gate type, a bottom-gate type, or the like can be used. As a bottom-gate transistor, a channel-etched transistor, a channel-protected transistor, or the like can be used.

FIG. 88 is an example of a top view of a pixel in which the TN system and transistors are combined.
By applying the pixel structure shown in FIG. 88 to a liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

Pixels shown in FIG.
, a transistor 10404 , a pixel electrode 10405 , and a pixel capacitor 10406 .

The scanning line 10401 has a function of transmitting a signal (scanning signal) to pixels. video signal line 10
402 has a function for transmitting a signal (video signal) to pixels. Note that the scanning line 104
01 and the video signal line 10402 are arranged in a matrix and are formed of different conductive layers. Note that the scanning line 10401 and . A semiconductor layer may be arranged at the intersection with the video signal line 10402 . By doing so, scanning lines 10401 and . video signal line 10
402 and cross capacitance can be reduced.

The capacitor line 10403 is arranged in parallel with the pixel electrode 10405 . A portion where the capacitor line 10403 and the pixel electrode 10405 are overlapped becomes a pixel capacitor 10406 . A part of the capacitor line 10403 extends along the video signal line 10402 so as to surround the video signal line 10402 . By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes as the potential of the video signal line 10402 changes. Note that the capacitance line 10403 and the video signal line 1040
2, the cross capacitance can be reduced. note that,
The capacitor line 10403 is made of the same material as the scanning line 10401 .

The transistor 10404 functions as a switch that electrically connects the video signal line 10402 and the pixel electrode 10405 . Note that one of the source region and the drain region of the transistor 10404 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10404 . By doing so, the channel width of the transistor 10404 is increased, so that switching capability can be improved. Note that the transistor 10404
is arranged to surround the semiconductor layer.

A pixel electrode 10405 is electrically connected to one of a source electrode and a drain electrode of the transistor 10404 . The pixel electrode 10405 is an electrode for applying the signal voltage transmitted by the video signal line 10402 to the liquid crystal element. Note that the pixel electrode 10405 is rectangular. By doing so, the aperture ratio of the pixel can be increased. Note that the pixel electrode 1040
As 5, a transparent material or a reflective material can be used. Alternatively, a combination of a transparent material and a reflective material may be used for the pixel electrode 10405 .

FIG. 89A is an example of a top view of a pixel in which the MVA method and transistors are combined. By applying the pixel structure shown in FIG. 89A to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a fast response speed, and a high contrast can be obtained.

Pixels shown in FIG. 89A include a scanning line 10501, a video signal line 10502,
503, a transistor 10504, a pixel electrode 10505, a pixel capacitor 10506,
and an orientation control protrusion 10507 .

The scanning line 10501 has a function of transmitting a signal (scanning signal) to pixels. video signal line 10
502 has a function for transmitting a signal (video signal) to pixels. Note that the scanning line 105
01 and the video signal lines 10502 are arranged in a matrix and are therefore formed of different conductive layers. Note that the scanning line 10501 and A semiconductor layer may be arranged at the intersection with the video signal line 10502 . By doing so, scanning lines 10501 and . video signal line 10
502 and cross capacitance can be reduced.

The capacitor line 10503 is arranged in parallel with the pixel electrode 10505 . A pixel capacitor 10506 is a portion where the capacitor line 10503 and the pixel electrode 10505 overlap each other. A part of the capacitor line 10503 extends along the video signal line 10502 so as to surround the video signal line 10502 . By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes as the potential of the video signal line 10502 changes. Note that the capacitance line 10503 and the video signal line 1050
2, the cross capacitance can be reduced. note that,
The capacitor line 10503 is made of the same material as the scanning line 10501 .

The transistor 10504 functions as a switch that electrically connects the video signal line 10502 and the pixel electrode 10505 . Note that one of the source region and the drain region of the transistor 10504 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10504 . By doing so, the channel width of the transistor 10504 is increased, so that switching capability can be improved. Note that the transistor 10504
is arranged to surround the semiconductor layer.

A pixel electrode 10505 is electrically connected to one of a source electrode and a drain electrode of the transistor 10504 . The pixel electrode 10505 is an electrode for applying the signal voltage transmitted by the video signal line 10502 to the liquid crystal element. Note that the pixel electrode 10505 is rectangular. By doing so, the aperture ratio of the pixel can be increased. Note that the pixel electrode 1050
As 5, a transparent material or a reflective material can be used. Alternatively, a combination of a transparent material and a reflective material may be used for the pixel electrode 10505 .

The alignment control projection 10507 is formed on the opposing substrate. The alignment control projections 10507 have a function of radially aligning the liquid crystal molecules. Note that the shape of the orientation control projection 10507 is not limited. For example, the orientation control projection 10507 may have a dogleg shape. By doing so, it is possible to form a plurality of regions in which the liquid crystal molecules are oriented differently. The viewing angle can be improved.

FIG. 89B is an example of a top view of a pixel in which the PVA method and a transistor are combined. By applying the pixel structure shown in FIG. 89B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a fast response speed, and a high contrast can be obtained.

Pixels shown in FIG. 89B include a scanning line 10511, a video signal line 10512,
513, a transistor 10514, a pixel electrode 10515, a pixel capacitor 10516,
It has an electrode notch 10517 .

The scanning line 10511 has a function of transmitting a signal (scanning signal) to pixels. video signal line 10
512 has a function of transmitting a signal (video signal) to the pixels. Note that the scanning line 105
11 and the video signal lines 10512 are arranged in a matrix and are formed of different conductive layers. Note that the scanning line 10511 and . A semiconductor layer may be arranged at the intersection with the video signal line 10512 . By doing so, scanning lines 10511 and . video signal line 10
512 and cross capacitance can be reduced.

The capacitor line 10513 is arranged in parallel with the pixel electrode 10515 . A portion where the capacitor line 10513 and the pixel electrode 10515 are overlapped becomes a pixel capacitor 10516 . A part of the capacitor line 10513 extends along the video signal line 10512 so as to surround the video signal line 10512 . By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold the potential changes as the potential of the video signal line 10512 changes. Note that the capacitance line 10513 and the video signal line 1051
2, the cross capacitance can be reduced. note that,
The capacity line 10513 is made of the same material as the scanning line 10511 .

The transistor 10514 functions as a switch that electrically connects the video signal line 10512 and the pixel electrode 10515 . Note that one of the source region and the drain region of the transistor 10514 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10514 . By doing so, the channel width of the transistor 10514 is increased, so that switching capability can be improved. Note that the transistor 10514
is arranged to surround the semiconductor layer.

A pixel electrode 10515 is electrically connected to one of a source electrode and a drain electrode of the transistor 10514 . The pixel electrode 10515 is an electrode for applying the signal voltage transmitted by the video signal line 10512 to the liquid crystal element. Note that the pixel electrode 10515 has a shape that matches the shape of the electrode cutout portion 10517 . Specifically, the electrode notch 10517
The shape is such that a portion where the pixel electrode 10515 is notched is formed in a portion without the pixel electrode 10515 . By doing so, it is possible to form a plurality of regions in which the liquid crystal molecules are oriented differently. The viewing angle can be improved. Note that a transparent material or a reflective material can be used for the pixel electrode 10515 . Alternatively, a combination of a transparent material and a reflective material may be used for the pixel electrode 10515 .

FIG. 90A is an example of a top view of a pixel in which the IPS method and transistors are combined. By applying the pixel structure shown in FIG. 90A to a liquid crystal display device, in principle, a liquid crystal display device with a large viewing angle and a small gradation dependency of response speed can be obtained.

A pixel shown in FIG. 90A includes a scanning line 10601, a video signal line 10602, a common electrode 1
0603, a transistor 10604, and a pixel electrode 10605.

The scanning line 10601 has a function of transmitting a signal (scanning signal) to pixels. video signal line 10
602 has a function for transmitting a signal (video signal) to pixels. Note that the scanning line 106
01 and the video signal line 10602 are arranged in a matrix and are formed of different conductive layers. Note that semiconductor layers may be arranged at intersections between the scanning lines 10601 and the video signal lines 10602 . By doing so, scanning lines 10601 and . Video signal line 106
02 and cross capacitance can be reduced. Note that the video signal line 10602 is connected to the pixel electrode 10
It is formed according to the shape of 605 .

The common electrode 10603 is arranged parallel to the pixel electrode 10605 . common electrode 1060
3 is an electrode for generating a horizontal electric field. Note that the shape of the common electrode 10603 is a bent comb shape. A part of the common electrode 10603 extends along the video signal line 10602 so as to surround the video signal line 10602 . By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes as the potential of the video signal line 10602 changes. By placing a semiconductor layer between the common electrode 10603 and the video signal line 10602, the cross capacitance can be reduced. A portion of the common electrode 10603 that is parallel to the scanning line 10601 is made of the same material as that of the scanning line 10601 . common electrode 106
03 parallel to the pixel electrode 10605 is made of the same material as the pixel electrode 10605 .

The transistor 10604 functions as a switch that electrically connects the video signal line 10602 and the pixel electrode 10605 . Note that one of the source region and the drain region of the transistor 10604 is arranged so as to be surrounded by the other of the source region and the drain region of the transistor 10604 . By doing so, the channel width of the transistor 10604 is increased, so that switching capability can be improved. Note that the transistor 10604
is arranged to surround the semiconductor layer.

A pixel electrode 10605 is electrically connected to one of a source electrode and a drain electrode of the transistor 10604 . The pixel electrode 10505 is an electrode for applying the signal voltage transmitted by the video signal line 10602 to the liquid crystal element. Note that the shape of the pixel electrode 10605 is a bent comb shape. By doing so, a horizontal electric field can be applied to the liquid crystal molecules.
A plurality of regions with different orientations of liquid crystal molecules can be formed. The viewing angle can be improved. Note that a transparent material or a reflective material can be used for the pixel electrode 10605 . Alternatively, a combination of a transparent material and a reflective material may be used for the pixel electrode 10605 .

Note that the comb-shaped portion of the common electrode 10603 and the pixel electrode 10605 may be formed of separate conductive layers. For example, the comb-shaped portion of the common electrode 10603 is the scanning line 1
0601 or the same conductive layer as the video signal line 10602 may be used. Similarly, the pixel electrode 10605 may be formed of the same conductive layer as the scanning line 10601 or the video signal line 10602 .

FIG. 90B is a top view of a pixel in which the FFS method and transistors are combined. By applying the pixel structure shown in FIG. 90B to a liquid crystal display device, a liquid crystal display device with a large viewing angle and a small gradation dependency of response speed can be obtained in principle.

The pixel shown in FIG. 90B includes a scanning line 10611, a video signal line 10612, a common electrode 1
0613, a transistor 10614, and a pixel electrode 10615 may be provided.

The scanning line 10611 has a function of transmitting a signal (scanning signal) to pixels. video signal line 10
612 has a function of transmitting a signal (video signal) to the pixels. Note that the scanning line 106
11 and the video signal lines 10612 are arranged in a matrix and are formed of different conductive layers. Note that the scanning line 10611 and . A semiconductor layer may be arranged at the intersection with the video signal line 10612 . By doing so, scanning lines 10611 and . video signal line 10
612 and cross capacitance can be reduced. Note that the video signal line 10612 is connected to the pixel electrode 1
It is formed according to the shape of 0615.

The common electrode 106013 is uniformly formed under the pixel electrode 10615 and under between the pixel electrodes 10615 and 10615 . Note that a transparent material or a reflective material can be used for the common electrode 106013 . Alternatively, a combination of a transparent material and a reflective material may be used for the common electrode 106013 .

The transistor 10614 functions as a switch that electrically connects the video signal line 10612 and the pixel electrode 10615 . Note that one of the source and drain regions of the transistor 10604 is arranged to be surrounded by the other of the source and drain regions of the transistor 10614 . By doing so, the channel width of the transistor 10614 is increased, so that switching capability can be improved. Note that the transistor 10614
is arranged to surround the semiconductor layer.

A pixel electrode 10615 is electrically connected to one of a source electrode and a drain electrode of the transistor 10614 . The pixel electrode 10515 is an electrode for applying the signal voltage transmitted by the video signal line 10612 to the liquid crystal element. Note that the shape of the pixel electrode 10615 is a bent comb shape. By doing so, a horizontal electric field can be applied to the liquid crystal molecules.
Note that the comb-shaped pixel electrode 10615 is arranged closer to the liquid crystal layer than the uniform portion of the common electrode 10613 . A plurality of regions with different orientations of liquid crystal molecules can be formed.
The viewing angle can be improved. Note that a transparent material or a reflective material can be used for the pixel electrode 10615 . Alternatively, a combination of a transparent material and a reflective material may be used for the pixel electrode 10615 .

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 11)
In this embodiment mode, a manufacturing process of a liquid crystal cell (also referred to as a liquid crystal panel) will be described.

FIG. 91 (
A) to (E) and FIGS. 92A to 92C will be referred to.

FIG. 92(C) is a cross-sectional view showing a liquid crystal cell. First substrate 70101 and second substrate 70
107 are attached via a spacer 70106 and a sealing material 70105 .
A liquid crystal 70109 is arranged between the first substrate 70101 and the second substrate 70107 . Note that the alignment film 70102 is formed on the first substrate 70101, and the alignment film 701 is formed on the first substrate 70101.
08 is formed on a second substrate 70107 .

A plurality of pixels are formed in a matrix on the first substrate 70101 . Each of the plurality of pixels may have a transistor. Note that the first substrate 70101 is T
It may also be called an FT substrate, an array substrate, or a TFT array substrate. As the first substrate 70101, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic Fibers (nylon, polyurethane, polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. can be used. can. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. However, it is not limited to this, and various things can be used.

A common electrode, a color filter, a black matrix, and the like are formed on the second substrate 70107 . Note that the second substrate 70107 may also be called a counter substrate or a color filter substrate.

The alignment film 70102 has a function of aligning liquid crystal molecules in a certain direction. Alignment film 70102
Polyimide resin or the like can be used as the material. However, it is not limited to this, and various things can be used. Note that the alignment film 70108 is the same as the alignment film 70102 .

A sealing material 70105 is provided between the first substrate 70101 and the second substrate 70101 so that the liquid crystal 70109 does not leak.
has a function of adhering the substrate 70107 of . That is, it functions as a sealing material.

The spacer 70106 has a function of keeping the space (liquid crystal cell gap) between the first substrate 70101 and the second substrate 70107 constant. Granular spacers or columnar spacers can be used as the spacers 70106 . Granular spacers include fibrous spacers and spherical spacers. Materials for the granular spacers include plastic, glass, and the like. Spherical spacers made of plastic are called plastic beads and are widely used. A fiber-shaped spacer made of glass is called a glass fiber, and is used by being mixed with a sealing material.

FIG. 91A is a cross-sectional view showing a step of forming an alignment film 70102 on the first substrate 70101. FIG. The alignment film 70102 is formed on the first substrate 70101 by a roller coating method using a roller 70103 . However, the orientation film 701 is formed on the first substrate 70101 .
As a method for forming 02, in addition to the roller coating method, an offset printing method, a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, and the like can be used. can. After that, the alignment film 70102 is sequentially subjected to preliminary baking and main baking.

FIG. 91B is a cross-sectional view showing a step of rubbing the alignment film 70102. As shown in FIG. The rubbing treatment is performed by rotating a rubbing roller 70104, which is a drum wrapped with cloth, to rub the alignment film 70102. As shown in FIG. When the alignment film 70102 is subjected to this rubbing treatment, grooves are formed in the alignment film 70102 for aligning the liquid crystal molecules in a certain direction. However, it is not limited to this, and the grooves may be formed in the alignment film using an ion beam. after that,
A water cleaning process is applied to the first substrate 70101 . By doing so, the first substrate 70101
Foreign matter or stains on the surface of the can be removed.

Although not shown, an alignment film 70108 is formed on the second substrate 70107 in the same manner as the first substrate 70101, and the alignment film 70108 is subjected to rubbing treatment. However, it is not limited to this, and the grooves may be formed in the alignment film using an ion beam.

FIG. 91C is a cross-sectional view showing a step of forming a sealing material 70105 on the alignment film 70102. FIG. The sealant 70105 is applied by a drawing device, screen printing, or the like to form a seal pattern. This seal pattern is formed along the outer circumference of the first substrate 70101, and a liquid crystal injection port is provided in a part of the seal pattern. And U for temporary fixing
V resin is spot-coated outside the display area of the first substrate 70101 by a dispenser or the like.

Note that the sealant 70105 may be formed over the second substrate 70107 .

FIG. 91(D) is a cross-sectional view showing a step of distributing spacers 70106 on the first substrate 70101. FIG. The spacers 70106 are sprayed by ejecting from a nozzle with compressed gas (dry spraying). Alternatively, the spacer 70106 is mixed with a volatile liquid and sprayed by spraying the liquid (wet spraying). The spacers 70106 can be uniformly spread over the first substrate 70101 by such dry spreading or wet spreading.

Here, the case where a spherical granular spacer is used as the spacer 70106 has been described. However, it is not limited to this, and columnar spacers can also be used. The columnar spacers may be formed on the first substrate 70101 or may be formed on the second substrate 70107 . Alternatively, part of the spacer may be formed on the first substrate 70101 and the rest on the second substrate 70107 .

Note that the spacer may be mixed in the sealing material. By doing so, the cell gap of the liquid crystal can be easily kept constant.

FIG. 91(E) is a cross-sectional view showing a step of bonding the first substrate 70101 and the second substrate 70107 together. The first substrate 70101 and the second substrate 70107 are bonded together in the atmosphere. Both substrates are pressed so that the gap between the first substrate 70101 and the second substrate 70107 is constant. After that, the sealing material 701 is exposed to ultraviolet irradiation or heat treatment.
05, the sealing material 70105 is cured.

92A and 92B are top views showing the process of filling liquid crystal. First substrate 70
A cell (also referred to as an empty cell) in which 101 and the second substrate 70107 are bonded together is placed in a vacuum chamber. After that, after the inside of the vacuum chamber is decompressed, the liquid crystal inlet 70113 of the empty cell is immersed in the liquid crystal. Then, when the inside of the vacuum chamber is opened to the atmosphere, liquid crystal 70109 is filled into the empty cell by differential pressure and capillary action.

After the required amount of liquid crystal 70109 is filled into the empty cell, the liquid crystal inlet is sealed with resin 70110 . Then, excess liquid crystal adhering to the empty cells is washed away. After that, the liquid crystal 70109 is subjected to a reorientation treatment by an annealing treatment. Thus, the liquid crystal cell is completed.

Next, the manufacturing process of the liquid crystal cell when the dropping method is used as the liquid crystal filling method will be described with reference to FIG.
Description will be made with reference to (A) to (D) and FIGS. 94(A) to (C).

FIG. 94(C) is a cross-sectional view showing a liquid crystal cell. First substrate 70301 and second substrate 70
307 are attached via a spacer 70306 and a sealing material 70305 .
A liquid crystal 70309 is arranged between the first substrate 70301 and the second substrate 70307 . Note that the alignment film 70302 is formed on the first substrate 70301, and the alignment film 703 is formed on the first substrate 70301.
08 is formed on a second substrate 70307 .

A plurality of pixels are formed in a matrix on the first substrate 70301 . Each of the plurality of pixels may have a transistor. Note that the first substrate 70301 is T
It may also be called an FT substrate, an array substrate, or a TFT array substrate. As the first substrate 70301, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), synthetic Fibers (nylon, polyurethane, polyester) or recycled fibers (acetate, cupra, rayon, recycled polyester), etc.), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. can be used. can. Alternatively, the skin (epidermis, dermis) or subcutaneous tissue of animals such as humans may be used as the substrate. However, it is not limited to this, and various things can be used.

A common electrode, a color filter, a black matrix, and the like are formed on the second substrate 70307 . Note that the second substrate 70307 may also be called a counter substrate or a color filter substrate.

The alignment film 70302 has a function of aligning liquid crystal molecules in a certain direction. Alignment film 70302
Polyimide resin or the like can be used as the material. However, it is not limited to this, and various things can be used. Note that the alignment film 70308 is the same as the alignment film 70302 .

A sealing material 70305 is provided between the first substrate 70301 and the second substrate 70301 so that the liquid crystal 70309 does not leak.
has a function of adhering the substrate 70307 of . That is, it functions as a sealing material.

The spacer 70306 has a function of keeping the space (liquid crystal cell gap) between the first substrate 70301 and the second substrate 70307 constant. Granular spacers or columnar spacers can be used as the spacers 70306 . Granular spacers include fibrous spacers and spherical spacers. Materials for the granular spacers include plastic, glass, and the like. Spherical spacers made of plastic are called plastic beads and are widely used. A fiber-shaped spacer made of glass is called a glass fiber, and is used by being mixed with a sealing material.

FIG. 93A is a cross-sectional view showing a step of forming an alignment film 70302 on the first substrate 70301. FIG. The alignment film 70302 is formed on the first substrate 70301 by a roller coating method using a roller 70303 . However, the orientation film 703 is formed on the first substrate 70301 .
As a method for forming 02, in addition to the roller coating method, an offset printing method, a dip coating method, an air knife coating method, a curtain coating method, a wire bar coating method, a gravure coating method, an extrusion coating method, etc. can also be used. can. After that, the alignment film 70302 is sequentially subjected to preliminary baking and main baking.

FIG. 93B is a cross-sectional view showing a step of rubbing the alignment film 70302. As shown in FIG. The rubbing treatment is performed by rotating a rubbing roller 70304, which is a drum wrapped with cloth, to rub the alignment film 70302. As shown in FIG. When the alignment film 70302 is subjected to this rubbing treatment, grooves are formed in the alignment film 70302 for aligning the liquid crystal molecules in a certain direction. However, it is not limited to this, and the grooves may be formed in the alignment film using an ion beam. after that,
A water cleaning process is applied to the first substrate 70301 . By doing so, the first substrate 70301
Foreign matter or stains on the surface of the can be removed.

Although not shown, an alignment film 70308 is formed on the second substrate 70307 in the same manner as the first substrate 70301, and the alignment film 70308 is subjected to rubbing treatment. However, it is not limited to this, and the grooves may be formed in the alignment film using an ion beam.

FIG. 93C is a cross-sectional view showing a step of forming a sealing material 70305 on the alignment film 70302. FIG. The sealant 70305 is applied by a drawing device, screen printing, or the like to form a seal pattern. This seal pattern is formed along the outer circumference of the first substrate 70301 . Here, the sealing material 70305 is a radical UV resin or a cationic U resin.
V resin is used. Then, a conductive resin is spot-applied by a dispenser.

Note that the sealant 70305 may be formed over the second substrate 70307 .

FIG. 93(D) is a cross-sectional view showing a step of distributing spacers 70306 on the first substrate 70301. FIG. The spacers 70306 are sprayed by jetting from a nozzle with compressed gas (dry spraying). Alternatively, the spacer 70306 is mixed with a volatile liquid and sprayed by spraying the liquid (wet spraying). The spacers 70306 can be uniformly spread over the first substrate 70301 by such dry spreading or wet spreading.

Here, the case where a spherical granular spacer is used as the spacer 70306 has been described. However, it is not limited to this, and columnar spacers can also be used. The columnar spacers may be formed on the first substrate 70301 or may be formed on the second substrate 70307 . Alternatively, part of the spacer may be formed on the first substrate 70301 and the rest on the second substrate 70307 .

Note that the spacer may be mixed in the sealing material. By doing so, the cell gap of the liquid crystal can be easily kept constant.

FIG. 94A is a cross-sectional view showing a step of dropping the liquid crystal 70309. FIG. After defoaming treatment is applied to the liquid crystal 70309 , the liquid crystal 70309 is dropped inside the sealing material 70305 .

Note that FIG. 94B is a top view after the liquid crystal 70309 is dropped. Seal material 7030
5 is formed along the outer circumference of the first substrate 70301, the liquid crystal 70309 does not leak.

FIG. 94(C) is a cross-sectional view showing a step of bonding the first substrate 70301 and the second substrate 70307 together. The first substrate 70301 and the second substrate 70307 are bonded together in a vacuum chamber. Both substrates are pressed so that the gap between the first substrate 70301 and the second substrate 70307 is constant. After that, the sealing material 70305 is cured by being irradiated with ultraviolet light. Here, it is preferable that the sealing material 70305 is irradiated with ultraviolet rays while the display portion is covered with a mask. This is because the liquid crystal 70309 can be prevented from being deteriorated by ultraviolet rays. After that, by annealing treatment,
A reorientation process is applied to the liquid crystal 70309 . Thus, the liquid crystal cell is completed.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 12)
In this embodiment mode, the structure and operation of a pixel of a display device will be described.

FIGS. 95A and 95B are timing charts showing an example of digital time grayscale driving. The timing chart of FIG. 95A shows a driving method in which a signal writing period (address period) to pixels and a light emission period (sustain period) are separated.

A period for completely displaying an image for one display area is called one frame period. One frame period has a plurality of subframe periods, and one subframe period has an address period and a sustain period. The address periods Ta1 to Ta4 indicate the time required to write signals to all rows of pixels, and the periods Tb1 to Tb4 indicate the time required to write signals to one row of pixels (or one pixel). The sustain periods Ts1 to Ts4 indicate the time during which the lighting or non-lighting state is maintained according to the video signal written to the pixels, and the ratio of the lengths is Ts.
1:Ts2:Ts3:Ts4=2 ³ : ^{2 2} :2 ¹ :2 ⁰ =8:4:2:1. Gradation is expressed depending on which sustain period the light is emitted.

Operation will be explained. First, in the address period Ta1, pixel selection signals are input to the scanning lines in order from the first row, and the pixels are selected. Then, when the pixel is selected, a video signal is input to the pixel from the signal line. Then, when a video signal is written to the pixel, the pixel holds that signal until the signal is input again. Lighting/non-lighting of each pixel in the sustain period Ts1 is controlled by the written video signal. Similarly, video signals are input to the pixels in the address periods Ta2, Ta3 and Ta4, and lighting and non-lighting of the pixels in the sustain periods Ts2, Ts3 and Ts4 are controlled by the video signals. Then, in each sub-frame period, the pixels which are not lit during the address period and to which the sustain period starts after the end of the address period and the signal for lighting is written are lit.

Here, with reference to FIG. 95B, description will be made focusing on the i-th pixel row. First, in the address period Ta1, pixel selection signals are input to the scanning lines in order from the first row, and the address period T
The i-th row pixel is selected in period Tb1(i) in a1. Then, when the i-th pixel is selected, a video signal is input from the signal line to the i-th pixel. and,
When a video signal is written to the i-th pixel, the i-th pixel holds the signal until the signal is input again. Lighting/non-lighting of the pixels in the i-th row during the sustain period Ts1 is controlled by the written video signal. Similarly, the address periods Ta2, Ta3, T
At a4, a video signal is input to the i-th pixel, and the video signal controls lighting/non-lighting of the i-th pixel in the sustain periods Ts2, Ts3, and Ts4. Then, in each sub-frame period, the pixels which are not lit during the address period and to which the sustain period starts after the end of the address period and the signal for lighting is written are lit.

Although the case of expressing 4-bit gradation has been described here, the number of bits and the number of gradations are not limited to this. The order of lighting does not have to be Ts1, Ts2, Ts3, and Ts4. Note that Ts1 and Ts2
, Ts3, and Ts4 do not have to be powers of two, and may be of the same length, or may be slightly shifted from the powers of two.

Next, a driving method in the case where a signal writing period (address period) to pixels and a light emission period (sustain period) are not separated will be described. In other words, the pixels in the row for which the video signal writing operation has been completed hold the signal until the signal is next written (or erased) to the pixel. A period from the write operation to the next writing of a signal to this pixel is called a data retention time. During this data retention time, the pixels are turned on or off according to the video signal written to the pixels. The same operation is performed until the last row, ending the address period. Then, the signal write operation in the next subframe period is started sequentially from the row whose data holding time has expired.

As described above, in the case of the driving method in which the pixels are turned on or off according to the video signal written to the pixels immediately after the signal writing operation is completed and the data holding time has come, it is attempted to make the data holding time shorter than the address period. However, since signals cannot be input to two rows at the same time, the address periods must not overlap, so the data retention time cannot be shortened. Therefore, as a result, it becomes difficult to perform high gradation display.

Therefore, by providing an erase period, a data retention time shorter than the address period is set. A driving method in which an erasing period is provided and a data holding time shorter than the address period is set will be described with reference to FIG.

First, in the address period Ta1, pixel scanning signals are input to the scanning lines in order from the first row,
A pixel is selected. Then, when the pixel is selected, a video signal is input to the pixel from the signal line. Then, when a video signal is written to the pixel, the pixel holds that signal until the signal is input again. The sustain period Ts1 is set by this written video signal.
lighting and non-lighting of each pixel in . In a row for which the video signal write operation has been completed, the pixels are turned on or off according to the immediately written video signal. The same operation is performed up to the last row, ending the address period Ta1. Then, the signal write operation in the next subframe period is started sequentially from the row whose data holding time has expired. Similarly, video signals are input to the pixels in the address periods Ta2, Ta3 and Ta4, and lighting and non-lighting of the pixels in the sustain periods Ts2, Ts3 and Ts4 are controlled by the video signals. The end of the sustain period TS4 is set by the start of the erasing operation. This is because when the signal written to the pixel is erased during the erasing time Te of each row, until the signal is written to the next pixel, regardless of the video signal written to the pixel during the address period, the signal is forcibly erased. This is because the light is essentially turned off. That is, the data retention time ends from the pixels in the row where the erasing time Te started.

Here, with reference to FIG. 96B, description will be made focusing on the i-th pixel row. In the i-th pixel row, in the address period Ta1, pixel scanning signals are input to the scanning lines in order from the first row, and the pixels are selected. Then, when the i-th pixel is selected in the period Tb1(i), the video signal is input to the i-th pixel. Then, when the video signal is written to the i-th pixel, the i-th pixel holds the signal until the signal is input again. Lighting/non-lighting of the i-th row pixels in the sustain period Ts1(i) is controlled by the written video signal. That is, when the video signal write operation is completed in the i-th row,
The i-th row pixels are turned on or off according to the immediately written video signal. Similarly, a video signal is input to the pixels in the i-th row during the address periods Ta2, Ta3 and Ta4, and the video signals control the lighting and non-lighting of the pixels in the i-th row during the sustain periods Ts2, Ts3 and Ts4. The end of the sustain period Ts4(i) is set by the start of the erase operation. This is because the pixels of the i-th row are forcibly turned off regardless of the video signal written to the pixels of the i-th row during the erasing time Ts(i) of the i-th row. That is, when the erasing time Te(i) starts, the data retention time of the i-th row pixels ends.

Therefore, without separating the address period and the sustain period, it is possible to provide a display device with a high gradation that is shorter than the address period and a high duty ratio (ratio of lighting period in one frame period). Since the instantaneous luminance can be lowered, the reliability of the display element can be improved.

Although the case of expressing 4-bit gradation has been described here, the number of bits and the number of gradations are not limited to this. Moreover, the order of lighting does not have to be Ts1, Ts2, Ts3, and Ts4, and may be random, or may be divided into a plurality of parts to emit light. Also, Ts1, Ts2,
The lighting times of Ts3 and Ts4 do not need to be powers of two, and may be the same length of lighting times, or may be slightly shifted from powers of two.

A configuration of a pixel to which digital time grayscale driving can be applied and an operation of the pixel will be described.

FIG. 97 is a diagram showing an example of a pixel configuration to which digital time grayscale driving can be applied.

A pixel 80300 includes a switching transistor 80301 and a driving transistor 803.
02, a light-emitting element 80304 and a capacitor 80303 . The switching transistor 80301 has a gate connected to the scanning line 80306, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 80305, and a second electrode (the other of the source electrode and the drain electrode) of the driving transistor. It is connected to the gate of the 80302. The driving transistor 80302 has a gate connected to the power supply line 80307 through the capacitor 80303, a first electrode connected to the power supply line 80307, and a second electrode connected to the first electrode (
pixel electrode). A second electrode of the light emitting element 80304 corresponds to the common electrode 80308 .

Note that the second electrode (common electrode 80308) of the light emitting element 80304 is set to a low power supply potential. Note that the low power supply potential is a potential that satisfies low power supply potential<high power supply potential with reference to the high power supply potential set to the power supply line 80307. As the low power supply potential, for example, GND, 0 V, or the like is set. Also good. The potential difference between the high power supply potential and the low power supply potential is the light emitting element 8030 .
4 to pass a current through the light emitting element 80304 to cause the light emitting element 80304 to emit light. Set the potential.

Note that the capacitor 80303 can be omitted by using the gate capacitance of the driving transistor 80302 instead. As for the gate capacitance of the driving transistor 80302, a capacitance may be formed in a region where a source region, a drain region, an LDD region, or the like overlaps the gate electrode, or the channel region and the gate electrode may overlap. A capacitance may be formed between

When a pixel is selected by the scanning line 80306, that is, when the switching transistor 80
A video signal is input to the pixel from the signal line 80305 when 301 is turned on.
Then, charge corresponding to a voltage corresponding to the video signal is accumulated in the capacitor 80303, and the capacitor 80303 holds the voltage. This voltage is the voltage between the gate and first electrode of the driving transistor 80302 and corresponds to the gate-source voltage Vgs of the driving transistor 80302 .

In general, the operating region of a transistor can be divided into a linear region and a saturation region. The boundary is (Vgs−Vth)=Vds, where Vds is the drain-source voltage, Vgs is the gate-source voltage, and Vth is the threshold voltage. (Vgs−Vth)>Vds
is a linear region, and the current value is determined by the magnitudes of Vds and Vgs. on the other hand,(
Vgs-Vth)<Vds is in the saturation region. Ideally, even if Vds changes,
The current value hardly changes. That is, the current value is determined only by the magnitude of Vgs.

Here, in the case of the voltage input voltage driving method, a video signal is input to the gate of the driving transistor 80302 so that the driving transistor 80302 is sufficiently turned on or turned off. That is, the driving transistor 80302 is operated in the linear region.

Therefore, when the driving transistor 80302 is a video signal that turns on, ideally, the power supply potential VDD set to the power supply line 80307 is set to the first electrode of the light emitting element 80304 as it is.

In other words, ideally, the voltage applied to the light emitting element 80304 is constant, and the light emitting element 80304
constant the luminance obtained from A plurality of subframe periods are provided within one frame period, a video signal is written to pixels in each subframe period, lighting or non-lighting of the pixels is controlled in each subframe period, and the pixels are lit. By the total subframe period,
Express gradation.

By inputting a video signal that causes the driving transistor 80302 to operate in a saturation region, current can flow to the light emitting element 80304 . If the light-emitting element 80304 is an element that determines luminance depending on current, a decrease in luminance due to deterioration of the light-emitting element 80304 can be suppressed. Further, by using an analog video signal, the light emitting element 8030
4, a current corresponding to the video signal can be applied. In this case, analog gradation driving can be performed.

FIG. 98 is a diagram showing an example of a pixel configuration to which digital time grayscale driving can be applied.

A pixel 80400 includes a switching transistor 80401 and a driving transistor 804.
02, a capacitive element 80403, a light emitting element 80404, and a rectifying element 80409.
The switching transistor 80401 has a gate connected to the second scanning line 80406,
A first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80405 and a second electrode (the other of the source electrode and the drain electrode) is connected to the gate of the driving transistor 80402 . The driving transistor 80402 has a gate connected to the power supply line 80407 through the capacitor 80403 and a gate connected to the second scanning line 804 through the rectifying element 80309 .
10, the first electrode is connected to the power supply line 80407, and the second electrode is connected to the light emitting element 8040.
4 are connected to the first electrodes (pixel electrodes). A second electrode of the light emitting element 80404 corresponds to the common electrode 80408 .

A low power supply potential is set to the second electrode (common electrode 80408) of the light emitting element 80404. FIG. Note that the low power supply potential is a potential that satisfies low power supply potential<high power supply potential with reference to the high power supply potential set to the power supply line 80407. As the low power supply potential, for example, GND, 0 V, or the like is set. Also good. The potential difference between the high power supply potential and the low power supply potential is the light emitting element 8040 .
4 to pass a current through the light emitting element 80404 to cause the light emitting element 80404 to emit light. Set the potential.

Note that the capacitor 80403 can be omitted by using the gate capacitance of the driving transistor 80402 instead. As for the gate capacitance of the driving transistor 80402, a capacitance may be formed in a region where a source region, a drain region, an LDD region, or the like overlaps the gate electrode, or the channel region and the gate electrode may overlap. A capacitance may be formed between

Note that a diode-connected transistor can be used as the rectifying element 80409 . Besides the diode-connected transistor, a PN junction diode, a PIN junction diode, a Schottky diode, a diode formed of carbon nanotubes, or the like may be used. The polarity of the diode-connected transistor may be N-channel type or P-channel type.

A pixel 80400 is a pixel shown in FIG.
0 is added. Therefore, the switching transistor 80401 shown in FIG.
, driving transistor 80402, capacitor 80403, light emitting element 80404, signal line 8
0405, the first scanning line 80406, the power supply line 80407, and the common electrode 80408 are the switching transistor 80301 and the driving transistor 803 shown in FIG.
02, capacitive element 80303, light emitting element 80304, signal line 80305, scanning line 80306
, a power supply line 80307 and a common electrode 80308 . Therefore, since the writing operation and the light emitting operation in FIG. 98 are the same as the writing operation and the light emitting operation described in FIG. 97, the description thereof will be omitted.

An erasing operation will be described. An H level signal is input to the second scanning line 80410 in erasing operation. Then, current flows through the rectifying element 80409, and the gate potential of the driving transistor 80402 held by the capacitor 80403 can be set to a certain potential. That is, the potential of the gate of the driving transistor 80402 can be set to a certain potential to forcibly turn off the driving transistor 80402 regardless of the video signal written to the pixel.

Note that the L-level signal input to the second scanning line 80410 has a potential that does not allow current to flow through the rectifying element 80409 when a video signal that turns off lighting is written in the pixel.
An H-level signal input to the second scan line 80410 is set to a potential at which the driving transistor 80402 is turned off regardless of the video signal written to the pixel.

Note that a diode-connected transistor can be used as the rectifying element 80409 . In addition to diode-connected transistors, PN junction diodes, P
An IN junction diode, a Schottky diode, a diode formed of carbon nanotubes, or the like may be used. The polarity of the diode-connected transistor may be N-channel type or P-channel type.

FIG. 99 is a diagram showing an example of a pixel configuration to which digital time grayscale driving can be applied.

A pixel 80500 includes a switching transistor 80501 and a driving transistor 805.
02, a capacitor 80503, a light-emitting element 80504, and an erasing transistor 80509. FIG. The switching transistor 80501 has a gate connected to the second scanning line 80506, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 80505, and a second electrode (the other of the source electrode and the drain electrode). It is connected to the gate of the driving transistor 80502 . The driving transistor 80502 has the gate of the capacitor 8050
3 to the power supply line 80507, and the gate is the first transistor of the erasing transistor 80509.
A first electrode is connected to the power supply line 80507, and a second electrode is connected to the light emitting element 8050.
4 are connected to the first electrodes (pixel electrodes). The erasing transistor has a gate connected to the second scanning line 80510 and a second electrode connected to the power supply line 80507 . light emitting element 8
The second electrode 0504 corresponds to the common electrode 80508 .

A low power supply potential is set to the second electrode (common electrode 80508) of the light emitting element 80504. FIG. Note that the low power supply potential is a potential that satisfies low power supply potential<high power supply potential with reference to the high power supply potential set to the power supply line 80507. As the low power supply potential, for example, GND, 0 V, or the like is set. Also good. The potential difference between the high power supply potential and the low power supply potential is the light emitting element 8050 .
4 to pass a current through the light emitting element 80504 to cause the light emitting element 80504 to emit light. Set the potential.

Note that the capacitor 80503 can be omitted by using the gate capacitance of the driving transistor 80502 instead. As for the gate capacitance of the driving transistor 80502, the capacitance may be formed in a region where a source region, a drain region, an LDD region, or the like overlaps with the gate electrode. A capacitance may be formed between

A pixel 80500 is obtained by adding an erasing transistor 80509 and a second scanning line 80510 to the pixel shown in FIG. Therefore, the switching transistor 80501, the driving transistor 80502, the capacitor 80503, and the light emitting element 80504 shown in FIG.
, a signal line 80505, a first scanning line 80506, a power supply line 80507 and a common electrode 8050
8 correspond to the switching transistor 80301, the driving transistor 80302, the capacitive element 80303, the light emitting element 80304, the signal line 80305, the scanning line 80306, the power supply line 80307 and the common electrode 80308 shown in FIG. Therefore, Fig. 99
Since the writing operation and the light emitting operation are the same as the writing operation and the light emitting operation described with reference to FIG. 97, the description thereof will be omitted.

An erasing operation will be described. An H level signal is input to the second scanning line 80510 in erasing operation. Then, the erasing transistor 80509 is turned on, and the gate and the first electrode of the driving transistor can be made to have the same potential. That is, the driving transistor 80502
Vgs of can be 0V. Thus, the driving transistor 80502 can be forcibly turned off.

The configuration and operation of a so-called threshold voltage correction type pixel will be described. The threshold voltage correction type pixel can be applied to digital time grayscale driving and analog grayscale driving.

FIG. 100 is a diagram showing an example of a pixel configuration called a threshold voltage correction type.

100 includes a driving transistor 80600, a first switch 80601, a second switch 80602, a third switch 80603, a first capacitor 80604, and a second
80605 and a light-emitting element 80620 . Driving transistor 806
The gate of 00 is connected to the signal line 80611 through the first capacitive element 80604 and the first switch 80601 in this order. A gate of the driving transistor 80600 is connected to the power supply line 80612 through the second capacitor 80605 . drive transistor 8
A first electrode of 0600 is connected to a power line 80612 . Driving transistor 806
The second electrode of 00 is connected to the first electrode of the light emitting element 80620 via the third switch 80603 . The second electrode of the driving transistor 80600 is connected to the second switch 806
02 to the gate of the driving transistor 80600 . Light emitting element 806
The 20 second electrodes correspond to the common electrode 80621 .

A low power supply potential is set to the second electrode of the light emitting element 80620 . Note that the low power supply potential is a potential that satisfies low power supply potential<high power supply potential with reference to the high power supply potential set to the power supply line 80612, and GND, 0 V, or the like is set as the low power supply potential. Also good.
By applying the potential difference between the high power supply potential and the low power supply potential to the light emitting element 80620, the light emitting element 80
In order to cause the light emitting element 80620 to emit light by applying a current to 620 , respective potentials are set so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80620 . Note that the second capacitor 80605 can be omitted by using the gate capacitance of the driving transistor 80600 instead. As for the gate capacitance of the driving transistor 80600, the capacitance may be formed in a region where a source region, a drain region, an LDD region, or the like overlaps with the gate electrode. A capacitance may be formed between Note that the first switch 80601, the second switch 80602, and the third switch 80603 are controlled to be on and off by the first scanning line 80613, the second scanning line 80614, and the third scanning line 80614, respectively. .

In the pixel driving method shown in FIG. 100, the operation period is the initialization period, the data write period,
The description will be divided into a threshold acquisition period and a light emission period.

During the initialization period, the second switch 80602 and the third switch 80603 are turned on.
Then, the potential of the gate of the driving transistor 80600 becomes lower than at least the potential of the power supply line 80612 . At this time, the first switch 80601 may be on or off. Note that the initialization period is not necessarily required.

During the threshold acquisition period, pixels are selected by the first scanning line 80613 . That is, the first switch 80601 is turned on and a constant voltage is input from the signal line 80611 . At this time, the second switch 80602 is turned on and the third switch 80603 is turned off. Therefore, the driving transistor 80600 is diode-connected, and the second electrode and gate of the driving transistor 80600 are in a floating state. and,
The potential of the gate of the driving transistor 80600 is the value obtained by subtracting the threshold voltage of the driving transistor 80600 from the potential of the power supply line 80612 . Therefore, the first capacitive element 806
04 holds the threshold voltage of the driving transistor 80600 . Second capacitive element 8
0605 holds the potential difference between the potential of the gate of the driving transistor 80600 and the constant voltage input from the signal line 80611 .

A video signal (voltage) is input from the signal line 80611 in the data writing period. At this time, the first switch 80601 remains on, the second switch 80602 remains off, and the third switch 80603 remains off. And the driving transistor 806
00 is in a floating state, the potential of the gate of the driving transistor 80600 is a constant voltage input to the signal line 80611 during the threshold acquisition period and a constant voltage input to the signal line 80611 during the data writing period. It changes according to the potential difference from the video signal being input. For example, the capacitance value of the first capacitive element 80604 << the second capacitive element 8
If the capacitance value is 0605, the driving transistor 80600 in the data write period
is the potential difference (amount of change) between the potential of the signal line 80611 during the threshold acquisition period and the potential of the signal line 80611 during the data writing period, and the threshold voltage of the driving transistor 80600 from the potential of the power supply line 80612. is approximately equal to the sum of the values obtained by subtracting
In other words, the potential of the gate of the driving transistor 80600 is
A potential obtained by correcting the threshold voltage of 0 is obtained.

During the light emission period, the potential difference between the gate of the driving transistor 80600 and the power supply line 80612 (
Vgs) flows through the light emitting element 80620 . At this time, the first switch 806
01 is turned off, the second switch 80602 remains off, and the third switch 8060
3 turns on. Note that the current flowing through the light emitting element 80620 is the driving transistor 8060
It is constant regardless of the threshold voltage of 0.

Note that the pixel configuration shown in FIG. 100 is not limited to this. For example, a new switch, resistor element, capacitor element, transistor, logic circuit, or the like may be added to the pixel shown in FIG. For example, the second switch 80602 is composed of a P-channel transistor or an N-channel transistor, the third switch 80603 is composed of a transistor with a polarity different from that of the second switch 80602, and the second switch 80602 and A third switch 80603 may be controlled by the same scan line.

The configuration and operation of a so-called current input type pixel will be described. Current input positive type pixels can be applied to digital gray scale driving and analog gray scale driving.

FIG. 101 is a diagram showing an example of the configuration of a pixel called a current input type.

A pixel shown in FIG. The gate of the driving transistor 80700 is connected to the second switch 8
0702 and the first switch 80701 are connected to the signal line 80711 in this order. The gate of the driving transistor 80700 is connected to the power supply line 807 through the capacitor 80704.
12 is connected. A first electrode of the driving transistor 80700 is connected to a power supply line 80712
It is connected to the. The second electrode of the driving transistor 80700 is connected to the first switch 807
01 to the power supply line 80712 . The second of the driving transistor 80700
The electrode is connected to the first electrode of the light emitting element 80730 via the third switch 80703. A second electrode of the light emitting element 80730 corresponds to the common electrode 80731 .

A low power supply potential is set to the second electrode of the light emitting element 80730 . Note that the low power supply potential is a potential that satisfies low power supply potential<high power supply potential with reference to the high power supply potential set to the power supply line 80712, and GND, 0 V, or the like is set as the low power supply potential. Also good.
By applying the potential difference between the high power supply potential and the low power supply potential to the light emitting element 80730, the light emitting element 80
In order to cause the light emitting element 80730 to emit light by applying a current to 730 , respective potentials are set so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80730 . Note that the capacitor 80704 can be omitted by using the gate capacitance of the driving transistor 80700 instead. As for the gate capacitance of the driving transistor 80700, the capacitance may be formed in a region where the source region, the drain region, the LDD region, or the like overlaps the gate electrode, or the channel region and the gate electrode may overlap. A capacitance may be formed between Note that the first switch 80701, the second switch 80702, and the third switch 80703 are controlled to be on and off by the first scanning line 80713, the second scanning line 80714, and the third scanning line 80734, respectively. .

A method of driving the pixel shown in FIG. 101 will be described by dividing the operation period into a data writing period and a light emitting period.

A pixel is selected by the first scanning line 80713 in the data writing period. in short,
The first switch 80701 is turned on, and current is input from the signal line 80711 as a video signal. At this time, the second switch 80702 is turned on and the third switch 80703 is turned off. Therefore, the potential of the gate of the driving transistor 80700 is a potential corresponding to the video signal. In other words, the capacitor 80704 holds a voltage between the gate electrode and the source electrode of the driving transistor 80700 so that the same current as the video signal flows through the driving transistor 80700 .

Next, in the light emission period, the first switch 80701 and the second switch 80702 are turned off, and the third switch 80703 is turned on. Therefore, a current having the same value as the video signal flows through the light emitting element 80730 .

Note that the pixel configuration shown in FIG. 101 is not limited to this. For example, a new switch, resistor element, capacitor element, transistor, logic circuit, or the like may be added to the pixel shown in FIG. For example, the first switch 80701 is composed of a P-channel transistor or an N-channel transistor, the second switch 80702 is composed of a transistor having the same polarity as the first switch 80701, and the first switch 80701 and the second Switch 80702 may be controlled by the same scan line. The second switch 80702 may be arranged between the gate of the driving transistor 80700 and the signal line 80711 .

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 13)
In this embodiment, the pixel structure of the display device will be described. In particular, a pixel structure of a display device using an organic EL element will be described.

FIG. 102A is an example of a top view (layout diagram) of a pixel having two transistors in one pixel. FIG. 102B is an example of a cross-sectional view along line XX′ shown in FIG. 102A.

102A illustrates a first transistor 60105, a first wiring 60106, a second wiring 60107, a second transistor 60108, a third wiring 60111, and a counter electrode 6011. FIG.
2. Capacitor 60113, pixel electrode 60115, partition wall 60116, organic conductor film 601
17, showing organic thin film 60118 and substrate 60119. FIG. Note that the first transistor 60105 serves as a switching transistor, the first wiring 60106 serves as a gate signal line, the second wiring 60107 serves as a source signal line, the second transistor 60108 serves as a driving transistor, and the third wiring. 60111 are preferably used as current supply lines, respectively.

A gate electrode of the first transistor 60105 is electrically connected to a first wiring 60106, one of a source electrode and a drain electrode of the first transistor 60105 is electrically connected to a second wiring 60107, and a second wiring 60107 is connected. The other of the source and drain electrodes of the first transistor 60105 is connected to the gate electrode of the second transistor 60108 and the capacitor 60113 .
is electrically connected to one electrode of the Note that the gate electrode of the first transistor 60105 is composed of a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60105 can be reduced.

One of the source electrode and the drain electrode of the second transistor 60108 is connected to the third wiring 60
111 , and the other of the source and drain electrodes of the second transistor 60108 is electrically connected to the pixel electrode 60115 . By doing so, the current flowing through the pixel electrode 60115 can be controlled by the second transistor 60108 .

An organic conductive film 60117 is provided on the pixel electrode 60115, and the organic thin film 601 is further provided.
18 (organic compound layer) is provided. On the organic thin film 60118 (organic compound layer),
A counter electrode 60112 is provided. The counter electrode 60112 may be solidly formed so as to be commonly connected to all pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60118 (organic compound layer) passes through either the pixel electrode 60115 or the counter electrode 60112 and is emitted.

In FIG. 102B, the case where light is emitted to the pixel electrode side, that is, the side where transistors and the like are formed is called bottom emission, and the case where light is emitted to the opposite electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60115 is preferably made of a transparent conductive film.
Conversely, in the case of top emission, the counter electrode 60112 is preferably made of a transparent conductive film.

In a light-emitting device for color display, EL elements having respective luminescent colors of R, G, and B may be separately painted, or single-color EL elements may be coated in a solid manner, and R, G, and R, G, and R may be displayed by color filters.
B light emission may be obtained.

Note that the configuration shown in FIG. 102 is merely an example, and various configurations other than the configuration shown in FIG. 102 can be employed with respect to the pixel layout, cross-sectional configuration, order of stacking of electrodes of EL elements, and the like. In addition to the illustrated organic thin film elements, various elements such as crystalline elements such as LEDs and inorganic thin film elements can be used for the light emitting layer.

FIG. 103A is an example of a top view (layout diagram) of a pixel having three transistors in one pixel. FIG. 103(B) is an example of a cross-sectional view taken along line XX' shown in FIG. 103(A).

FIG. 103A illustrates a substrate 60200, a first wiring 60201, a second wiring 60202, a third wiring 60203, a fourth wiring 60204, a first transistor 60205, a second transistor 60206, and a third transistor. 60207, pixel electrode 60208, partition wall 60
211 , an organic conductor film 60212 , an organic thin film 60213 and a counter electrode 60214 are shown.
Note that the first wiring 60201 is used as a source signal line, the second wiring 60202 is used as a writing gate signal line, the third wiring 60203 is used as an erasing gate signal line, and the fourth wiring 602 is used.
04 is preferably used as a current supply line, the first transistor 60205 as a switching transistor, the second transistor 60206 as an erasing transistor, and the third transistor 60207 as a driving transistor.

A gate electrode of the first transistor 60205 is electrically connected to a second wiring 60202, one of a source electrode and a drain electrode of the first transistor 60205 is electrically connected to a first wiring 60201, and The other of the source and drain electrodes of the 1 transistor 60205 is electrically connected to the gate electrode of the third transistor 60207 . Note that the gate electrode of the first transistor 60205 is composed of a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60205 can be reduced.

A gate electrode of the second transistor 60206 is electrically connected to a third wiring 60203, one of a source electrode and a drain electrode of the second transistor 60206 is electrically connected to a fourth wiring 60204, and The other of the source and drain electrodes of the second transistor 60206 is electrically connected to the gate electrode of the third transistor 60207 . Note that the gate electrode of the second transistor 60206 is composed of a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60206 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60207 is connected to the fourth wiring 60
204 , and the other of the source and drain electrodes of the third transistor 60207 is electrically connected to the pixel electrode 60208 . By doing so, the current flowing through the pixel electrode 60208 can be controlled by the third transistor 60207 .

An organic conductive film 60212 is provided on the pixel electrode 60208, and the organic thin film 602 is further provided.
13 (organic compound layer) is provided. On the organic thin film 60213 (organic compound layer),
A counter electrode 60214 is provided. Note that the counter electrode 60214 may be solidly formed so as to be commonly connected to all pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60213 (organic compound layer) passes through either the pixel electrode 60208 or the counter electrode 60214 and is emitted.

In FIG. 103B, the case where light is emitted to the pixel electrode side, that is, the side where transistors and the like are formed is called bottom emission, and the case where light is emitted to the opposite electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60208 is preferably made of a transparent conductive film.
Conversely, for top emission, the counter electrode 60214 is preferably formed of a transparent conductive film.

In a light-emitting device for color display, EL elements having respective luminescent colors of R, G, and B may be separately painted, or single-color EL elements may be coated in a solid manner, and R, G, and R, G, and R may be displayed by color filters.
B light emission may be obtained.

Note that the configuration shown in FIG. 103 is merely an example, and various configurations other than the configuration shown in FIG. 103 can be employed with respect to the pixel layout, cross-sectional configuration, order of stacking of electrodes of EL elements, and the like. In addition to the illustrated organic thin film elements, various elements such as crystalline elements such as LEDs and inorganic thin film elements can be used for the light emitting layer.

FIG. 104A is an example of a top view (layout diagram) of a pixel having four transistors in one pixel. FIG. 104(B) is an example of a cross-sectional view along line XX' shown in FIG. 104(A).

FIG. 104A illustrates a substrate 60300, a first wiring 60301, a second wiring 60302, a third wiring 60303, a fourth wiring 60304, a first transistor 60305, a second transistor 60306, and a third transistor. 60307, fourth transistor 60308
, pixel electrode 60309, fifth wiring 60311, sixth wiring 60312, partition 60321
, an organic conductor film 60322 , an organic thin film 60323 and a counter electrode 60324 .
Note that the first wiring 60301 is used as a source signal line, the second wiring 60302 is used as a writing gate signal line, the third wiring 60303 is used as an erasing gate signal line, and the fourth wiring 603 is used.
04 serves as a reverse bias signal line, the first transistor 60305 serves as a switching transistor, the second transistor 60306 serves as an erase transistor, and the third transistor 60306 serves as an erase transistor.
The transistor 60307 of the fourth transistor 60308 serves as a driving transistor.
is preferably used as a reverse bias transistor, the fifth wiring 60311 as a current supply line, and the sixth wiring 60312 as a reverse bias power supply line.

A gate electrode of the first transistor 60305 is electrically connected to a second wiring 60302, one of a source electrode and a drain electrode of the first transistor 60305 is electrically connected to a first wiring 60301, and The other of the source and drain electrodes of the 1 transistor 60305 is electrically connected to the gate electrode of the third transistor 60307 . Note that the gate electrode of the first transistor 60305 is composed of a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60305 can be reduced.

A gate electrode of the second transistor 60306 is electrically connected to a third wiring 60303, one of a source electrode and a drain electrode of the second transistor 60306 is electrically connected to a fifth wiring 60311, and The other of the source and drain electrodes of the second transistor 60306 is electrically connected to the gate electrode of the third transistor 60307 . Note that the gate electrode of the second transistor 60306 is composed of a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60306 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60307 is connected to the fifth wiring 60
311 , and the other of the source and drain electrodes of the third transistor 60307 is electrically connected to the pixel electrode 60309 . By doing so, the current flowing through the pixel electrode 60309 can be controlled by the third transistor 60307 .

A gate electrode of the fourth transistor 60308 is electrically connected to a fourth wiring 60304, one of a source electrode and a drain electrode of the fourth transistor 60308 is electrically connected to a sixth wiring 60312, and The other of the source electrode and the drain electrode of the transistor 60308 of No. 4 is electrically connected to the pixel electrode 60309 . By doing so, the potential of the pixel electrode 60309 can be controlled by the fourth transistor 60308 , so that a reverse bias can be applied to the organic conductive film 60322 and the organic thin film 60323 . By applying a reverse bias to the light emitting element including the organic conductor film 60322 and the organic thin film 60323, the reliability of the light emitting element can be greatly improved.

An organic conductive film 60322 is provided on the pixel electrode 60309, and an organic thin film 603 is further provided.
23 (organic compound layer) is provided. On the organic thin film 60323 (organic compound layer),
A counter electrode 60324 is provided. Note that the counter electrode 60324 may be solidly formed so as to be commonly connected to all pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60323 (organic compound layer) passes through either the pixel electrode 60309 or the counter electrode 60324 and is emitted.

In FIG. 104B, the case where light is emitted to the pixel electrode side, that is, the side where transistors and the like are formed is called bottom emission, and the case where light is emitted to the opposite electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60309 is preferably made of a transparent conductive film.
Conversely, for top emission, the counter electrode 60324 is preferably made of a transparent conductive film.

In a light-emitting device for color display, EL elements having respective luminescent colors of R, G, and B may be separately painted, or single-color EL elements may be coated in a solid manner, and R, G, and R, G, and R may be displayed by color filters.
B light emission may be obtained.

Note that the configuration shown in FIG. 104 is merely an example, and various configurations other than the configuration shown in FIG. 104 can be employed with respect to the pixel layout, cross-sectional configuration, order of stacking of electrodes of EL elements, and the like. In addition to the illustrated organic thin film elements, various elements such as crystalline elements such as LEDs and inorganic thin film elements can be used for the light emitting layer.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 14)
In this embodiment mode, the structure of an EL element will be described. In particular, the structure of the organic EL element will be described.

The configuration of the mixed junction EL element will be described. Examples include a hole injection layer made of a hole injection material, a hole transport layer made of a hole transport material, a light emitting layer made of a light emitting material, an electron transport layer made of an electron transport material, and an electron injection layer made of an electron injection material. etc. is not a layered structure that can be clearly distinguished, but a layer in which a plurality of materials such as a hole injection material, a hole transport material, a light emitting material, an electron transport material, and an electron injection material are mixed ( A structure having a mixed layer) (hereinafter referred to as a mixed junction EL element) will be described.

FIGS. 105A, 105B, 105C, and 105D are schematic diagrams showing the structure of a mixed-junction EL element. Note that the layer sandwiched between the anode 190101 and the cathode 190102 corresponds to the EL layer.

In FIG. 105A, the EL layer includes a hole-transporting region 190103 made of a hole-transporting material and an electron-transporting region 190104 made of an electron-transporting material. and between the hole-transporting region 190103 and the electron-transporting region 190104, the mixed region 190 containing both the hole-transporting material and the electron-transporting material
105 is provided.

Note that the concentration of the hole-transporting material in the mixed region 190105 decreases and the concentration of the electron-transporting material in the mixed region 190105 increases in the direction from the anode 190101 to the cathode 190102 .

The method of setting the density gradient can be freely set. For example, there is no hole-transporting region 190103 consisting of only the hole-transporting material, and the concentration ratio of each functional material changes inside the mixed region 190105 containing both the hole-transporting material and the electron-transporting material (concentration gradient have) configuration. Alternatively, hole-transporting region 190 consisting only of hole-transporting material
There is no electron transport region 190104 consisting only of 103 and the electron transport material, and the concentration ratio of each functional material changes (has a concentration gradient) inside the mixed region 190105 containing both the hole transport material and the electron transport material. It may be a configuration. Alternatively, the concentration ratio may be configured to vary depending on the distance from the anode or cathode. Note that the change in the density ratio may be continuous.

A mixed region 190105 has a region 190106 added with a light-emitting material. The emission color of the EL element can be controlled by the luminescent material. Carriers can be trapped by the luminescent material. As the luminescent material, a metal complex containing a quinoline skeleton, a metal complex containing a benzoxazole skeleton, a metal complex containing a benzothiazole skeleton, and various fluorescent dyes can be used. By adding these luminescent materials, the luminescent color of the EL element can be controlled.

As the anode 190101, an electrode material with a large work function is preferably used in order to efficiently inject holes. For example _, transparent electrodes such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), ZnO, _SnO2 or _In2O3 can be used. Alternatively, the anode 190101 may be an opaque metal material if it is not necessary to have translucency.

An aromatic amine-based compound or the like can be used as the hole transport material.

As the electron transport material, a quinoline derivative, a metal complex having 8-quinolinol or a derivative thereof as a ligand (particularly, tris(8-quinolinolite)aluminum (Alq ₃ )), or the like can be used.

As the cathode 190102, an electrode material with a small work function is preferably used in order to efficiently inject electrons. Metals such as aluminum, indium, magnesium, silver, calcium, barium, and lithium can be used singly. Alternatively, alloys of these metals or alloys of these metals and other metals may be used.

FIG. 105B shows a schematic diagram of an EL element having a structure different from that in FIG. 105A. In addition, Fig. 1
05(A) are denoted by the same reference numerals, and description thereof is omitted.

FIG. 105B does not have a region added with a light-emitting material. However, the electron transport region 19
As a material added to 0104, a material having both electron-transporting and light-emitting properties (electron-transporting light-emitting material) such as tris(8-quinolinolite)aluminum (Alq ₃ ) can be used to emit light.

Alternatively, as a material added to the hole-transporting region 190103, a material having both hole-transporting and light-emitting properties (hole-transporting light-emitting material) may be used.

FIG. 105C is a schematic diagram of an EL element having a structure different from that of FIGS. 105A and 105B.
shown in 105(A) and 105(B) are denoted by the same reference numerals,
Description is omitted.

In FIG. 105(C), a hole-blocking material having a large energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital compared to the hole-transporting material has a region 190107 added in the mixed region 190105. . The region 190107 doped with the hole-blocking material is moved from the region 190106 doped with the light-emitting material in the mixed region 190105 to the cathode 19010 .
By arranging it on the second side, the recombination rate of carriers can be increased, and the luminous efficiency can be increased. The configuration of providing the region 190107 to which the hole-blocking material is added is particularly effective in an EL device utilizing light emission (phosphorescence) by triple photoexcitons.

FIG. 105D shows a schematic diagram of an EL element having a structure different from those in FIGS. 105A, 105B, and 105C. 105(A), 105(B), and 105(C) are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 105(D), an electron blocking material having a larger energy difference between the highest and lowest occupied molecular orbital than the electron transporting material has a region 190108 added in the mixed region 190105 . The region 190108 to which the electron blocking material is added is moved from the region 190106 to which the light emitting material is added in the mixed region 190105 to the anode 19010.
By arranging it on the 1 side, the recombination rate of carriers can be increased and the luminous efficiency can be increased. The configuration of providing the region 190108 to which the electron-blocking material is added is particularly effective in an EL device utilizing light emission (phosphorescence) by triple photoexcitons.

Fig. 105(E) shows Fig. 105(A), Fig. 105(B), Fig. 105(C) and Fig. 105(D)
) is a schematic diagram showing the configuration of a mixed junction type EL device different from the above. In FIG. 105(E), E
An example of a structure having a region 190109 to which a metal material is added is shown in a portion of the EL layer which is in contact with the electrode of the L element. In FIG. 105(E), the same parts as those in FIGS. 105(A) to 105(D) are denoted by the same reference numerals, and description thereof is omitted. For example, the configuration shown in FIG.
An electron transporting region 190104 to which an electron transporting material is added using MgAg (Mg—Ag alloy) as 90102 may have a region 190109 to which an Al (aluminum) alloy is added in a region in contact with the cathode 190102. With the above structure, oxidation of the cathode can be prevented and the efficiency of electron injection from the cathode can be increased. Thus, the life of the mixed-junction EL device can be extended. The drive voltage can also be lowered.

A co-evaporation method or the like can be used as a method for manufacturing the mixed junction type EL element.

In mixed-junction EL devices such as those shown in FIGS. 105A to 105E, there is no distinct layer interface, and charge accumulation can be reduced. Thus, its life can be lengthened. The drive voltage can also be lowered.

Note that the configurations shown in FIGS. 105A to 105E can be freely combined for implementation.

Note that the structure of the mixed-junction EL element is not limited to this. Any known configuration can be freely used.

The organic material forming the EL layer of the EL element may be a low-molecular-weight material or a high-molecular-weight material. Alternatively, both of these materials may be used. When a low-molecular-weight material is used as the organic compound material, the film can be formed by vapor deposition. On the other hand, when a polymer material is used for the EL layer, the polymer material can be dissolved in a solvent and formed into a film by a spin coating method or an inkjet method.

The EL layer may be composed of a middle-molecular material. In this specification, the medium-molecular-weight organic light-emitting material means an organic light-emitting material that does not have sublimability and has a degree of polymerization of about 20 or less. In the case of using a middle-molecular material for the EL layer, the film can be formed by an inkjet method or the like.

A low-molecular-weight material, a high-molecular-weight material, and a medium-molecular-weight material may be used in combination.

The EL device may be one that utilizes light emission (fluorescence) from singlet excitons or one that utilizes light emission (phosphorescence) from triplet excitons, or both.

Next, a vapor deposition apparatus for manufacturing display devices will be described with reference to the drawings.

The display device may be manufactured by forming an EL layer. The EL layer is formed including at least a part of a material that exhibits electroluminescence. The EL layer may be composed of a plurality of layers with different functions. In that case, the EL layer may be formed by combining layers having different functions, which are also called a hole injection transport layer, a light emitting layer, an electron injection transport layer, and the like.

FIG. 10 shows the configuration of a vapor deposition apparatus for forming an EL layer on an element substrate on which transistors are formed.
6. In this vapor deposition apparatus, transfer chambers 190260 and 190261 are connected to a plurality of processing chambers. The processing chambers include a load chamber 190262 for supplying substrates, an unload chamber 190263 for recovering substrates, a heat processing chamber 190268, a plasma processing chamber 190272, an EL
Film formation processing chambers 190269 to 190275 for depositing materials, one electrode of the EL element,
A film forming chamber 1902 for forming a conductive film containing aluminum or aluminum as a main component.
76 included. Gate valves 190277a to 19027 are provided between the transfer chamber and each processing chamber.
7m is provided, and the pressure of each processing chamber can be independently controlled to prevent mutual contamination between processing chambers.

A substrate introduced from the load chamber 190262 into the transfer chamber 190260 is transferred into a predetermined processing chamber by a rotatably provided arm-type transfer means 190266 . Substrates are transported from one processing chamber to another by transport means 190266 . The transfer chamber 190260 and the transfer chamber 190261 are connected by a film formation processing chamber 190270, where a transfer means 19026 is connected.
6 and transport means 190267 to transfer the substrate.

Each processing chamber connected to the transfer chamber 190260 and the transfer chamber 190261 is kept in a reduced pressure state. Therefore, in this vapor deposition apparatus, the film formation process of the EL layer is continuously performed without exposing the substrate to the air. A display panel that has completed the deposition process of the EL layer may be deteriorated by water vapor or the like. Chamber 190265 is connected to transfer chamber 190261 . Since the sealing processing chamber 190265 is placed under atmospheric pressure or a reduced pressure close to it, the transfer chamber 1902
An intermediate processing chamber 190264 is also provided between 61 and the sealing processing chamber 190265 . An intermediate processing chamber 190264 is provided for transferring substrates and buffering the pressure between chambers.

The load chamber, the unload chamber, the transfer chamber, and the film formation processing chamber are provided with exhaust means for keeping the chambers at a reduced pressure. Various vacuum pumps such as dry pumps, turbomolecular pumps, and diffusion pumps can be used as the evacuation means.

In the vapor deposition apparatus of FIG. 106, the number and configuration of the processing chambers connected to the transfer chambers 190260 and 190261 can be appropriately combined according to the layered structure of the EL element. An example of the combination is shown below.

The heat treatment chamber 190268 first heats the substrate on which the lower electrode, the insulating partition, or the like is formed to perform degassing treatment. The plasma processing chamber 190272 performs rare gas or oxygen plasma processing on the surface of the base electrode. This plasma treatment is performed to clean the surface, stabilize the surface state, and stabilize the physical or chemical state (for example, work function) of the surface.

A film formation processing chamber 190269 is a processing chamber for forming an electrode buffer layer in contact with one electrode of an EL element. The electrode buffer layer has a carrier injection property (hole injection or electron injection),
It is a layer that suppresses the occurrence of short circuits or dark spot defects in the EL element. Typically, the electrode buffer layer is an organic-inorganic mixed material with a resistivity of 5×10 ⁴ to 1×10 ⁶ Ωcm, and 30 to 3 Ωcm.
00 nm thick. Note that the deposition chamber 190271 is a treatment chamber for depositing a hole transport layer.

The structure of the light-emitting layer in the EL element differs depending on whether it emits monochromatic light or white light. It is preferable to arrange the film formation processing chambers in the vapor deposition apparatus accordingly. for example,
In the case of forming three types of EL elements with different emission colors in a display panel, it is necessary to form light-emitting layers corresponding to the respective emission colors. In this case, the film formation processing chamber 190270 is used for film formation of the first light-emitting layer, the film formation processing chamber 190273 is used for film formation of the second light-emitting layer, and the film formation processing chamber 1902 is used.
74 can be used for film formation of the third light-emitting layer. By dividing the film formation processing chamber for each light emitting layer, mutual contamination by different light emitting materials can be prevented, and the throughput of the film formation processing can be improved.

Incidentally, three types of EL materials with different emission colors may be sequentially vapor-deposited in the film formation processing chambers 190270, 190273, and 190274, respectively. In this case, a shadow mask is used and vapor deposition is performed by shifting the mask according to the region to be vapor-deposited.

In the case of forming an EL element that emits white light, light-emitting layers with different emission colors are stacked vertically. Also in this case, the element substrate can be sequentially moved in the film formation processing chamber, and the film can be formed for each light emitting layer. Alternatively, different light-emitting layers can be successively deposited in the same deposition chamber.

In the deposition treatment chamber 190276, an electrode is deposited over the EL layer. The electrodes can be formed by electron beam evaporation or sputtering, but resistance heating evaporation is preferably used.

The element substrate on which electrodes have been formed is passed through an intermediate processing chamber 190264 to a sealing processing chamber 1902 .
65 is carried in. The sealing treatment chamber 190265 is filled with an inert gas such as helium, argon, neon, or nitrogen. stop. In the sealed state, an inert gas or a resin material may be filled between the element substrate and the sealing plate. The sealing treatment chamber 190265 is equipped with a dispenser for drawing a sealing material, a mechanical element such as a fixing stage or an arm for fixing a sealing plate facing an element substrate, a dispenser for filling a resin material, a spin coater, or the like. It is

FIG. 107 shows the internal configuration of the film formation processing chamber. The film formation processing chamber is kept under reduced pressure, and FIG.
In 7, the inside sandwiched between the top plate 190391 and the bottom plate 190392 is the room, which indicates the room kept in a decompressed state.

One or more evaporation sources are provided in the processing chamber. This is because it is preferable to provide a plurality of evaporation sources when forming a plurality of layers with different compositions or co-evaporating different materials. In FIG. 107, evaporation sources 190381a, 190381b, 190381c are attached to evaporation source holder 190380. In FIG. Evaporation source holder 190380 is held by articulated arm 190383 . The articulated arm 190383 can freely move the position of the evaporation source holder 190380 within its movable range by expanding and contracting the joint. Alternatively, the evaporation source holder 190380 is provided with a distance sensor 190382, and the evaporation source 19038
The distance between 1a to 190381c and substrate 190389 may be monitored to control the optimum distance during vapor deposition. In that case, a multi-joint arm that can be displaced in the vertical direction (the Z direction) may be used as the multi-joint arm.

The substrate stage 190386 and the substrate chuck 190387 are paired to form a substrate 190389.
fixed. The substrate stage 190386 may incorporate a heater so that the substrate 190389 can be heated. The substrate 190389 is fixed to the substrate stage 190386 and loaded/unloaded by releasing/releasing the substrate chuck 190387 . During vapor deposition, a shadow mask 190390 having openings corresponding to the pattern to be vapor deposited can be used as needed. In that case, shadow mask 190390 includes substrate 190389 and evaporation source 19 .
0381a to 190381c. shadow mask 190390
is fixed to the substrate 190389 by a mask chuck 190388 in close contact or with a certain interval. When the shadow mask 190390 needs to be aligned, a camera is placed in the processing chamber, and the mask chuck 190388 is provided with positioning means for finely moving in the XY-θ directions.

Evaporation source 190381 is added with deposition material supply means for continuously supplying deposition material to the evaporation source. The vapor deposition material supply means has material supply sources 190385a, 190385b, and 190385c arranged at positions separated from the evaporation source 190381, and a material supply pipe 190384 connecting between them. Typically material sources 190385a, 190385b
, 190385 c are provided corresponding to the evaporation source 190381 . In the case of Fig. 107,
The material supply source 190385a and the evaporation source 190381a correspond. material source 1903
The same is true for 85b and evaporation source 190381b, material supply source 190385c and evaporation source 190381c.

An airflow transport method, an aerosol method, or the like can be applied as a supply method of the vapor deposition material. In the air current transport method, the fine powder of the vapor deposition material is placed on an air current and transported to the evaporation source 190381 using an inert gas or the like. In the aerosol method, a raw material liquid in which a vapor deposition material is dissolved or dispersed in a solvent is conveyed, aerosolized by an atomizer, and vapor deposition is performed while the solvent in the aerosol is vaporized. In either case, the evaporation source 190381 is provided with a heating means, and the transported evaporation material is evaporated to form a film on the substrate 190389 . In the case of FIG. 107, the material supply pipe 19
The 0384 is composed of thin tubes that can be flexibly bent and are rigid enough not to deform even under reduced pressure.

When the airflow transport method or the aerosol method is applied, the film formation may be performed under a reduced pressure of 133 Pa to 13300 Pa, which is preferably atmospheric pressure or less in the film formation processing chamber.
The deposition treatment chamber can be filled with an inert gas such as helium, argon, neon, krypton, xenon, or nitrogen, or the pressure can be adjusted while supplying the gas (while evacuating the chamber at the same time). Note that an oxidizing atmosphere may be created by introducing a gas such as oxygen or nitrous oxide into a deposition treatment chamber in which an oxide film is formed. Alternatively, a reducing atmosphere may be created by introducing a gas such as hydrogen into the film formation chamber in which the organic material is deposited.

As another vapor deposition material supply method, a screw may be provided in the material supply pipe 190384 to continuously push out the vapor deposition material toward the evaporation source.

According to this vapor deposition apparatus, even a display panel with a large screen can be formed continuously with good uniformity. Since it is not necessary to replenish the vapor deposition material every time the vapor source runs out of the vapor deposition material, the throughput can be improved.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 15)
In this embodiment mode, the structure of an EL element will be described. In particular, the structure of the inorganic EL element will be described.

Inorganic EL elements are classified into dispersion type inorganic EL elements and thin film type inorganic EL elements according to the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, while the latter has an electroluminescent layer made of a thin film of a luminescent material. They are common in that they require electrons. Mechanisms of light emission to be obtained include donor-acceptor recombination type light emission using a donor level and an acceptor level and localized type light emission using core electron transition of metal ions. In general, the donor-
In many cases, acceptor recombination type light emission and thin film type inorganic EL devices are local type light emission.

A light-emitting material is composed of a host material and an impurity element serving as a light-emitting center. Light emission of various colors can be obtained by changing the impurity element to be contained. Various methods such as a solid-phase method or a liquid-phase method (coprecipitation method) can be used as a method for producing a light-emitting material. Alternatively, a spray pyrolysis method, a metathesis method, a method by thermal decomposition reaction of a precursor, a reverse micelle method or a method combining these methods with high-temperature calcination, or a liquid phase method such as a freeze-drying method can be used.

In the solid-phase method, a base material and an impurity element or a compound containing an impurity element are weighed, mixed in a mortar,
In this method, an impurity element is added to the matrix material by heating and firing in an electric furnace to cause a reaction. The firing temperature is preferably 700 to 1500°C. This is because if the temperature is too low, the solid-phase reaction will not proceed, and if the temperature is too high, the base material will decompose. It should be noted that the firing may be performed in the powder state, but it is preferable to perform the firing in the pellet state. It requires firing at a relatively high temperature, but since it is a simple method, it is highly productive and suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing an impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature due to the small particle size.

Sulfides, oxides, and nitrides can be used as base materials for the light-emitting material. Sulfides include, for example, zinc sulfide ( _ZnS ), cadmium sulfide (CdS), calcium _sulfide (CaS), yttrium sulfide ( _Y2S3 ), gallium sulfide ( _Ga2S3 ), strontium sulfide (SrS), sulfide Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. Nitrides include, for example, aluminum nitride (AlN), gallium nitride (GaN),
Indium nitride (InN) or the like can be used. In addition, zinc selenide (ZnSe)
, zinc telluride (ZnTe), etc. can also be used, and calcium-gallium sulfide (CaG
a ₂ S ₄ ), strontium-gallium sulfide (SrGa ₂ S ₄ ), and barium-gallium sulfide (BaGa ₂ S ₄ ).

Manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium, as luminescent centers for localized luminescence (Pr) or the like can be used. A halogen element such as fluorine (F) or chlorine (Cl) may be added for charge compensation.

On the other hand, as the emission center of donor-acceptor recombination type emission, the first
and a second impurity element forming an acceptor level can be used. For example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used as the first impurity element. Examples of the second impurity element include copper (Cu),
Silver (Ag) or the like can be used.

When synthesizing a light-emitting material for donor-acceptor recombination-type light emission using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, and a second impurity element or a second
are weighed and mixed in a mortar, then heated and fired in an electric furnace. As the base material, the base material described above can be used. Examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), aluminum sulfide (Al ₂ S ₃ ) can be used, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), silver sulfide (Ag _2S ) and the like can be used. The firing temperature is preferably 700 to 1500°C.
This is because if the temperature is too low, the solid-phase reaction will not proceed, and if the temperature is too high, the base material will decompose. It should be noted that the firing may be performed in the powder state, but it is preferable to perform the firing in the pellet state.

As an impurity element in the case of using a solid-phase reaction, a compound composed of a first impurity element and a second impurity element may be used in combination. In this case, impurity elements are easily diffused,
Since the solid-phase reaction proceeds more easily, a uniform luminescent material can be obtained. Furthermore, since an extra impurity element is not included, a highly pure light-emitting material can be obtained. Examples of the compound composed of the first impurity element and the second impurity element include copper chloride (CuCl) and silver chloride (
AgCl) or the like can be used.

The concentration of these impurity elements may be 0.01 to 10 atom %, preferably 0.05 to 5 atom %, relative to the base material.

In the case of thin-film inorganic EL, the electroluminescent layer is a layer containing the above-described light-emitting material, and the resistance heating deposition method,
Vacuum deposition methods such as electron beam deposition (EB deposition), physical vapor deposition methods such as sputtering (
PVD), metalorganic CVD, hydride transport low pressure CVD, and other chemical vapor deposition methods (CV
D), it can be formed using atomic epitaxy (ALE) or the like.

108A to 108C show an example of a thin-film inorganic EL element that can be used as a light-emitting element. 108A to 108C, the light-emitting element includes the first electrode layer 120100
, an electroluminescent layer 120102 and a second electrode layer 120103 .

The light-emitting elements shown in FIGS. 108B and 108C have a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element shown in FIG. 108A. The light-emitting element shown in FIG. 108B has an insulating film 120104 between the first electrode layer 120100 and the electroluminescent layer 120102, and the light-emitting element shown in FIG. and the electroluminescent layer 120
102, an insulating film 120105, a second electrode layer 120103 and an electroluminescent layer 12010
2 and an insulating film 120106. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a laminate having a plurality of layers.

Note that the insulating film 120104 is formed so as to be in contact with the first electrode layer 120100 in FIG.
is provided, but the order of the insulating film and the electroluminescent layer is reversed, and the second electrode layer 120103
An insulating film 120104 may be provided so as to be in contact with the .

In the case of a dispersed inorganic EL, a particulate luminescent material is dispersed in a binder to form a film-like electroluminescent layer. Process into granules. If particles of a desired size cannot be obtained by the method for producing the luminescent material, the material may be processed into particles by pulverization with a mortar or the like. What is a binder
It is a substance for fixing the granular luminescent material in a dispersed state and maintaining the shape of the electroluminescent layer. The luminescent material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

In the case of the dispersion-type inorganic EL, the method of forming the electroluminescent layer includes a droplet ejection method that can selectively form an electroluminescent layer, a printing method (screen printing, offset printing, etc.), a coating method such as spin coating, and dipping. method, dispenser method, etc. can also be used. Although the film thickness is not particularly limited, it is preferably in the range of 10 to 1000 nm. In the electroluminescent layer containing a luminescent material and a binder, the ratio of the luminescent material is preferably 50 wt % or more and 80 wt % or less.

109A to 109C show an example of a dispersed inorganic EL element that can be used as a light-emitting element. The light-emitting element in FIG. 109A has a stacked structure of a first electrode layer 120200, an electroluminescent layer 120202, and a second electrode layer 120203, and a light-emitting material 120201 is held in the electroluminescent layer 120202 with a binder. include.

An insulating material can be used for the binder. Organic materials and inorganic materials can be used as the insulating material. Alternatively, a mixed material of organic and inorganic materials may be used. As the organic insulating material, a polymer having a relatively high dielectric constant such as cyanoethyl cellulose resin, polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride resin can be used. Alternatively, heat-resistant polymers such as aromatic polyamides or polybenzimidazoles, or siloxane resins may be used. The siloxane resin is Si—O—
It corresponds to a resin containing Si bonds. Siloxane has a skeletal structure composed of bonds of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (eg, alkyl group, aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as substituents. or,
Resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may also be used. Barium titanate (B
aTiO ₃ ) or strontium titanate (SrTiO ₃ ) or other fine particles having a high dielectric constant can be appropriately mixed to adjust the dielectric constant.

Examples of inorganic insulating materials contained in the binder include silicon oxide (SiOx), silicon nitride (SiNx
), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, aluminum oxide containing oxygen and nitrogen (Al ₂ O ₃ ), titanium oxide (TiO ₂ )
, BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KN
bO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y
₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS, and other inorganic insulating materials. By including (by addition, etc.) an inorganic material with a high dielectric constant in an organic material, the dielectric constant of the electroluminescent layer composed of the luminescent material and the binder can be more controlled, and the dielectric constant can be increased. .

In the fabrication process, the luminescent material is dispersed in a solution containing a binder. As the solvent for the binder-containing solution, a solvent in which the binder material dissolves and a solution having a viscosity suitable for the method of forming the electroluminescent layer (various wet processes) and the desired film thickness can be prepared may be appropriately selected. . For example, an organic solvent or the like can be used as the solvent. When a siloxane resin is used as the binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB), or the like can be used as the solvent.

The light-emitting elements shown in FIGS. 109B and 109C have a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element shown in FIG. 109A. The light-emitting element shown in FIG. 109B has an insulating film 120204 between the first electrode layer 120200 and the electroluminescent layer 120202, and the light-emitting element shown in FIG. and the electroluminescent layer 120
202, the insulating film 120205, the second electrode layer 120203 and the electroluminescent layer 12020
2 and an insulating film 120206. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a laminate having multiple layers.

Although the insulating film 120204 is provided in contact with the first electrode layer 120200 in FIG. A membrane 120204 may be provided.

A material that can be used for an insulating film such as the insulating film 120104 in FIG. 108 and the insulating film 120204 in FIG. 109 preferably has high insulation resistance and a dense film quality.
Furthermore, it is preferable that the dielectric constant is high. For example, silicon oxide ( _SiO2 ), yttrium oxide ( _Y2O3 ), titanium oxide ( _TiO2 ), aluminum oxide ( _Al2O3 ), hafnium oxide ( _{HfO2 ) , tantalum} oxide ( _Ta2O5 ), Barium titanate (BaTi
O ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., or a mixed film or a laminated film of two or more of these. can be used. These insulating films can be formed by sputtering, vapor deposition, CVD, or the like. The insulating film may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. Although the film thickness is not particularly limited, it is preferably 10 to
It is in the range of 1000 nm.

The light-emitting element emits light by applying a voltage between a pair of electrode layers sandwiching the electroluminescent layer, but can operate by either DC driving or AC driving.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 16)
In this embodiment mode, an example of a display device, in particular, a case of optical handling will be described.

A rear projection display device 130100 shown in FIGS.
In addition, a speaker 130102 and operation switches 130104 may be provided. The projector unit 130111 is the housing 130 of the rear projection display device 130100.
110, a mirror 13011 receives projection light for projecting an image based on an image signal.
Project towards 2. A rear projection display device 130100 includes a screen panel 130101.
It is configured to display an image projected from the back of the screen.

On the other hand, FIG. 111 shows a front projection display device 130200 . A front projection display device 130200 includes a projector unit 130111 and a projection optical system 130201 . This projection optical system 130201 is configured to project an image onto a screen or the like arranged in front.

Rear projection display device 130100 shown in FIG. 110 and front projection display device 1 shown in FIG.
The configuration of the projector unit 130111 applied to the 30200 will be described below.

FIG. 112 shows one configuration example of the projector unit 130111 . This projector unit 130111 includes a light source unit 130301 and a modulation unit 130304.
It has The light source unit 130301 includes a light source optical system 1 including lenses.
30303 and a light source lamp 130302 . The light source lamp 130302 is housed in a housing so as not to diffuse stray light. As the light source lamp 130302, for example, a high-pressure mercury lamp or a xenon lamp capable of emitting a large amount of light is used. The light source optical system 130303 is configured by appropriately providing an optical lens, a film having a polarizing function, a film for adjusting phase difference, an IR film, and the like. And light source unit 130301
are arranged such that the emitted light is incident on the modulation unit 130304 . Modulation unit 130304 includes a plurality of display panels 130308, color filters, dichroic mirror 130305, total reflection mirror 130306, prism 130309, projection optical system 13
0310 is provided. Light emitted from the light source unit 130301 is separated into a plurality of optical paths by the dichroic mirror 130305 .

Each optical path is provided with a color filter that transmits light of a predetermined wavelength or wavelength band, and a display panel 130308 . A transmissive display panel 130308 modulates transmitted light based on a video signal. Each color of light transmitted through the display panel 130308 passes through the prism 130
309 and passes through the projection optical system 130310 to display an image on the screen. A Fresnel lens may be arranged between the mirror and the screen. Projection light projected by the projector unit 130111 and reflected by the mirror is converted into roughly parallel light by the Fresnel lens and projected onto the screen.

A projector unit 130111 shown in FIG. 113 includes a reflective display panel 130407,
A configuration with 130408, 130409 is shown.

A projector unit 130111 shown in FIG. 113 includes a light source unit 130301 and a modulation unit 130400 . The light source unit 130301 may have the same configuration as in FIG. Light from the light source unit 130301 passes through the dichroic mirror 130
401, 130402, and a total reflection mirror 130403, the beam is divided into a plurality of optical paths, and enters polarization beam splitters 130404, 130405, and 130406. The polarizing beam splitters 130404, 130405 and 130406 are provided corresponding to the reflective display panels 130407, 130408 and 130409 corresponding to each color. Reflective display panels 130407, 130408, and 130409 modulate reflected light based on video signals. Lights of respective colors reflected by the reflective display panels 130407 , 130408 , and 130409 are combined by being incident on the prism 130309 and projected through the projection optical system 130411 .

Of the light emitted from the light source unit 130301, the dichroic mirror 130401 transmits only light in the red wavelength region and reflects light in the green and blue wavelength regions. Furthermore, the dichroic mirror 130402 reflects only light in the green wavelength range. Light in the red wavelength region transmitted through the dichroic mirror 130401 is reflected by the total reflection mirror 130403,
Light in the blue wavelength region enters the polarization beam splitter 130405 , and light in the green wavelength region enters the polarization beam splitter 130406 . The polarizing beam splitters 130404, 130405, and 130406 have the function of separating the incident light into P-polarized light and S-polarized light, and the function of transmitting only the P-polarized light. The reflective display panels 130407, 130408, and 130409 polarize the incident light based on the video signal.

Only S-polarized light corresponding to each color is incident on the reflective display panels 130407, 130408, and 130409 corresponding to each color. Note that the reflective display panels 130407, 130408,
130409 may be a liquid crystal panel. At this time, the liquid crystal panel operates in an electric field controlled birefringence mode (ECB). Liquid crystal molecules are vertically aligned at a certain angle with respect to the substrate. Therefore, in the reflective display panels 130407, 130408, and 130409, the display molecules are oriented so that the incident light is reflected without changing its polarization state when the pixels are in the OFF state. Then, when the pixel is in the ON state, the orientation state of the display molecules changes, and the polarization state of the incident light changes.

The projector unit 130111 shown in FIG. 113 can be applied to the rear projection display device 130100 shown in FIG. 110 and the front projection display device 130200 shown in FIG.

The projector unit shown in FIG. 114 has a single-plate configuration. A projector unit 130111 shown in FIG.
0507, a projection optical system 130511, and a retardation plate 130504. Projection optical system 1
30511 is composed of one or more lenses. The display panel 130507 may be provided with a color filter.

FIG. 114B shows the projector unit 13 that operates in the field sequential system.
0111 configuration. The field sequential system is a system in which light of each color such as red, green, and blue is temporally shifted and sequentially made incident on the display panel to perform color display without a color filter. In particular, high-definition images can be displayed when combined with a display panel that responds quickly to changes in input signals. In FIG. 114B, the light source unit 1
Between the 30301 and the display panel 130508, a rotary color filter plate 130505 having a plurality of color filters such as red, green, and blue is provided.

The projector unit 130111 shown in FIG. 114C has a color display method of
The configuration of a color separation method using a macro lens is shown. This system is a system in which a microlens array 130506 is provided on the light incident side of the display panel 130509, and color display is realized by illuminating each color of light from each direction. The projector unit 130111 adopting this method has a feature that the light from the light source unit 130301 can be effectively used because the loss of light due to the color filter is small. Figure 114
The projector unit 130111 shown in (C) includes a dichroic mirror 130501, a dichroic mirror 130502, and a red light dichroic mirror 130503 so as to illuminate the display panel 130509 with light of each color from each direction.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

(Embodiment 17)
In this embodiment, an example of an electronic device will be described.

FIG. 115 shows a display panel module in which a display panel 900101 and a circuit board 900111 are combined. A display panel 900101 has a pixel portion 900102, a scanning line driver circuit 900103, and a signal line driver circuit 900104. FIG. For example, a control circuit 900112 and a signal dividing circuit 900113 are formed on the circuit board 900111 . The display panel 900101 and the circuit board 900111 are connected by a connection wiring 900114 . FPC or the like can be used for the connection wiring.

In the display panel 900101, a pixel portion 900102 and some peripheral driver circuits (driver circuits with low A driver circuit having a high operating frequency among the driver circuits) is formed on an IC chip, and the IC chip is formed on the display panel 9001 by COG (Chip On Glass) or the like.
01 may be implemented. By doing so, the area of the circuit board 900111 can be reduced, and a small display device can be obtained. Alternatively, the IC chip can be used as a TAB (Tape Out
o Bonding) or a printed board may be used to mount the display panel 900101 . By doing so, the area of the display panel 900101 can be reduced, so that a display device with a small frame size can be obtained.

For example, in order to reduce power consumption, a pixel portion is formed on a glass substrate using transistors, all peripheral driving circuits are formed on an IC chip, and the IC chip is mounted on the display panel by COG or TAB. may

The display panel module shown in FIG. 115 completes the television receiver. FIG. 116 is a block diagram showing the main configuration of a television receiver. tuner 9002
01 receives a video signal and an audio signal. A video signal is sent to a video signal amplifier circuit 900202,
A video signal processing circuit 900203 that converts the signal output from the video signal amplifier circuit 900202 into color signals corresponding to the respective colors of red, green, and blue, and a control circuit 900212 that converts the video signal into the input specification of the driving circuit. processed by control circuit 9002
12 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 900213 may be provided on the signal line side, and the input digital signal may be divided into m (m is a positive integer) and supplied.

Of the signals received by the tuner 900201, audio signals are amplified by an audio signal amplifier circuit 900205.
, and its output is supplied to a speaker 900207 through an audio signal processing circuit 900206 . The control circuit 900208 receives the reception station (reception frequency) and volume control information from the input section 90 .
0209 and sends a signal to the tuner 900201 or audio signal processing circuit 900206 .

FIG. 11 shows a television receiver incorporating a display panel module of a form different from that shown in FIG.
7(A). In FIG. 117(A), the display screen 9 housed in the housing 900301
00302 is formed with a display panel module. A speaker 900303, an operation switch 900304, an input means 900305, a sensor 900306 (force, displacement, position,
Speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness,
including a function to measure an electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays), a microphone 900307, and the like may be provided as appropriate.

FIG. 117B shows a television receiver in which only the display can be carried wirelessly. A battery and a signal receiver are contained in the housing 900312, and the battery is used for a display unit 900313, a speaker unit 900317, sensors (force, displacement, position, speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current,
(including the ability to measure voltage, power, radiation, flow, humidity, gradient, vibration, odor or infrared) 900319 and microphone 900320. battery charger 9
At 00310, repetitive charging is possible. The charger 900310 can transmit and receive video signals and can transmit the video signals to the signal receiver of the display.
The device shown in FIG. 117B is controlled by operation keys 900316 . Alternatively, the device shown in FIG.
0310 can be signaled. That is, it may be a video-audio two-way communication device. Alternatively, the device shown in FIG. 117(B) sends a signal to the charger 900310 by operating the operation key 900316, and causes another electronic device to receive the signal that the charger 900310 can transmit. Communication control of electronic equipment is also possible. That is, it may be a general-purpose remote control device. Note that input means 900318 and the like may be provided as appropriate. Note that the content (or part of it) described in each figure of the present embodiment can be displayed on the display unit 90.
0313.

FIG. 118A shows a module in which a display panel 900401 and a printed wiring board 900402 are combined. A display panel 900401 includes a pixel portion 900403 provided with a plurality of pixels, a first scan line driver circuit 900404, and a second scan line driver circuit 9004.
05 and a signal line driver circuit 900406 for supplying a video signal to the selected pixel.

The printed wiring board 900402 includes a controller 900407, a central processing unit (CPU
) 900408, memory 900409, power supply circuit 900410, audio processing circuit 90041
1, a transmission/reception circuit 900412, and the like. The printed wiring board 900402 and the display panel 900401 are connected by a flexible wiring board (FPC) 900413 . A flexible printed circuit board (FPC) 900413 may be provided with a holding capacitor, a buffer circuit, and the like to prevent noise from occurring in a power supply voltage or a signal and an increase in signal rise time. Note that the controller 900407, audio processing circuit 900411, memory 900409, central processing unit (CPU) 900408, power supply circuit 900410, etc.
It can also be mounted on the display panel 900401 using a COG (Chip On Glass) method. The COG method can reduce the scale of the printed wiring board 900402 .

Interface (I/F) section 900414 provided on printed wiring board 900402
Input/output of various control signals is performed via the . An antenna port 900415 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 900402 .

FIG. 118B shows a block diagram of the module shown in FIG. 118A. This module includes VRAM 900416, DRAM 900417, flash memory 900418, etc. as memory 900409. FIG. The VRAM 900416 stores image data to be displayed on the panel, the DRAM 900417 stores image data or audio data, and the flash memory stores various programs.

A power supply circuit 900410 supplies power for operating a display panel 900401, a controller 900407, a central processing unit (CPU) 900408, an audio processing circuit 900411, a memory 900409, and a transmission/reception circuit 900412. However, depending on the specifications of the panel, the power supply circuit 900410 may be provided with a current source.

A central processing unit (CPU) 900408 includes a control signal generation circuit 900420, a decoder 90
0421, a register 900422, an arithmetic circuit 900423, a RAM 900424, an interface (I/F) section 900419 for a central processing unit (CPU) 900408, and the like. Central processing unit (CPU) via interface (I/F) unit 900419
Various signals input to 900408 are temporarily held in register 900422 and then input to arithmetic circuit 900423, decoder 900421, and the like. The arithmetic circuit 900423 performs arithmetic operations based on the input signals and designates locations to which various commands are to be sent. One-way decoder 9
The signal input to 00421 is decoded and input to control signal generation circuit 900420 . Based on the input signal, the control signal generation circuit 900420 generates a signal containing various commands, and outputs the signal to a location specified in the arithmetic circuit 900423, specifically the memory 900409,
It is sent to the transmission/reception circuit 900412, the audio processing circuit 900411, the controller 900407, and the like.

The memory 900409, transmission/reception circuit 900412, audio processing circuit 900411, and controller 900407 operate according to the received instructions. The operation will be briefly described below.

A signal input from the input means 900425 is transferred to an interface (I/F) section 90041.
Central Processing Unit (CPU) 9004 mounted on printed wiring board 900402 via 4
08. The control signal generation circuit 900420 converts the image data stored in the VRAM 900416 into a predetermined format according to the signal sent from the input means 900425 such as a pointing device or keyboard, and sends it to the controller 900407 .

The controller 900407 has a central processing unit (CPU) 9004 according to the specifications of the panel.
08, the signal including the image data is subjected to data processing, and the display panel 90040
1. The controller 900407 controls Hs based on the power supply voltage input from the power supply circuit 900410 or various signals input from the central processing unit (CPU) 900408.
A ync signal, a Vsync signal, a clock signal CLK, an alternating voltage (AC Cont), and a switching signal L/R are generated and supplied to the display panel 900401 .

The transmitting/receiving circuit 900412 processes signals transmitted and received as radio waves by the antenna 900428. Specifically, an isolator, a bandpass filter, a VCO (Volt
Age Controlled Oscillator), LPF (Low Pass
Filter), couplers, baluns, and other high-frequency circuits may be included. Transmission/reception circuit 90
Of the signals transmitted and received in 0412, the signal containing voice information is the central processing unit (CPU
) is sent to the audio processing circuit 900411 in accordance with the instructions from the 900408.

A signal including audio information sent according to a command from a central processing unit (CPU) 900408 is demodulated into an audio signal in an audio processing circuit 900411 and sent to a speaker 900427 . The audio signal sent from the microphone 900426 is modulated in the audio processing circuit 900411 and sent to the transmitting/receiving circuit 9 according to instructions from the central processing unit (CPU) 900408.
00412.

Controller 900407, central processing unit (CPU) 900408, power supply circuit 90041
0, an audio processing circuit 900411, and a memory 900409 can be mounted as the package of this embodiment.

Of course, the present embodiment is not limited to television receivers, and can be used for a variety of applications, particularly as large-area display media such as monitors for personal computers, information display boards at railway stations and airports, and advertising display boards on the street. can be applied.

Next, a configuration example of a mobile phone will be described with reference to FIG.

A display panel 900501 is detachably incorporated in a housing 900530 . The shape or dimensions of the housing 900530 can be appropriately changed according to the size of the display panel 900501 . A housing 900530 to which a display panel 900501 is fixed is fitted into a printed circuit board 900531 to be assembled as a module.

The display panel 900501 is connected to the printed circuit board 900531 through the FPC 900513 . A printed circuit board 900531 includes a speaker 900532 and a microphone 900
533, transmission/reception circuit 900534, signal processing circuit 900 including CPU, controller, etc.
535 and sensor 900541 (force, displacement, position, speed, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, including the ability to measure humidity, gradient, vibration, odor or infrared) are formed. Such a module, input means 900536 and battery 900537 are combined and housed in a housing 900539 . The pixel portion of the display panel 900501 is a housing 900539
be visible through an opening window formed in the

In the display panel 900501, a pixel portion and some peripheral driver circuits (driver circuits with low operating frequencies among the plurality of driver circuits) are integrally formed on a substrate using transistors. circuit (driving circuit with high operating frequency) is formed on the IC chip, and the IC
The chip may be mounted on the display panel 900501 by COG (Chip On Glass). Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Auto Bonding) or a printed circuit board. By adopting such a structure, the power consumption of the display device can be reduced, and the operating time of the mobile phone can be extended with one charge. It is possible to reduce the cost of the mobile phone.

The mobile phone shown in FIG. 119 has a function of displaying various information (still images, moving images, text images, etc.). It has a function of displaying a calendar, date or time on the display. It has a function of operating or editing information displayed on the display unit. Various software (programs)
It has a function to control processing by It has a wireless communication function. It has the function of communicating with other mobile phones, fixed-line phones, or voice communication devices using wireless communication functions. It has a function to connect to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. It has a function of operating a vibrator in response to incoming calls, data reception, or alarms. It has the function of generating sound in response to incoming calls, data reception, or alarms. Note that the functions of the mobile phone shown in FIG. 119 are not limited to this, and can have various functions.

The mobile phone shown in FIG. 120 includes operation switches 900604 and a microphone 90060.
5 etc., a display panel (A) 900608, a display panel (B) 900609, a speaker 900606, a sensor 900611 (force, displacement, position, speed, acceleration, angular speed, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared), input means 900612, etc. Body (B) 900602 provided with
are connected with hinges 900610 so as to be openable and closable. A display panel (A) 900608 and a display panel (B) 900609 are connected together with a circuit board 900607 to a main body (B) 900602.
is housed in the housing 900603 of the Display panel (A) 900608 and display panel (
B) The pixel portion of 900609 is arranged so as to be visible through an opening window formed in the housing 900603 .

The display panel (A) 900608 and the display panel (B) 900609 are the mobile phone 90
Specifications such as the number of pixels can be appropriately set according to the functions of the 0600. For example, it is possible to combine the display panel (A) 900608 as a main screen and the display panel (B) 900609 as a sub-screen.

The mobile phone according to this embodiment can be transformed into various aspects according to its functions or uses. For example, an imaging device may be incorporated in the hinge 900610 to form a mobile phone with a camera. Even if the operation switches 900604, the display panel (A) 900608, and the display panel (B) 900609 are housed in one housing, the above effects can be obtained. Similar effects can be obtained by applying the configuration of this embodiment to an information display terminal having a plurality of display units.

The mobile phone shown in FIG. 120 has a function of displaying various information (still images, moving images, text images, etc.). It has a function of displaying a calendar, date or time on the display. It has a function of operating or editing information displayed on the display unit. Various software (programs)
It has a function to control processing by It has a wireless communication function. It has the function of communicating with other mobile phones, fixed-line phones, or voice communication devices using wireless communication functions. It has a function to connect to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. It has a function of operating a vibrator in response to incoming calls, data reception, or alarms. It has the function of generating sound in response to incoming calls, data reception, or alarms. Note that the functions of the mobile phone shown in FIG. 120 are not limited to this, and can have various functions.

The contents (or part of them) described in the drawings of this embodiment can be applied to various electronic devices. Specifically, it can be applied to a display portion of an electronic device. Examples of such electronic devices include video cameras, digital cameras, goggle-type displays, navigation systems, sound reproduction devices (car audio, audio components, etc.), computers, game devices, personal digital assistants (mobile computers, mobile phones, portable games, etc.). machine or e-book, etc.)
, an image reproducing device (specifically, a Digital Versatile D
a device that reproduces a recording medium such as isc (DVD) and has a display capable of displaying the image thereof).

FIG. 121(A) is a display comprising a housing 900711, a support base 900712, a display unit 900713, an input means 900714, sensors (force, displacement, position, speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetic , temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared) 9
00715, microphone 900716, speaker 900717, operation keys 90071
8, including LED lamp 900719 and so on. The display shown in FIG. 121A has a function of displaying various information (still image, moving image, text image, etc.) on the display portion. In addition, Fig. 1
The functions of the display illustrated in 21A are not limited to this, and can have various functions.

FIG. 121B shows a camera including a main body 900731, a display portion 900732, and an image receiving portion 900.
733, operation keys 900734, external connection port 900735, shutter 900736
, input means 900737, sensor 900738 (force, displacement, position, speed, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation , flow rate, humidity, gradient, vibration, odor or infrared measurement),
It includes a microphone 900739, a speaker 900740, an LED lamp 900741, and the like. The camera illustrated in FIG. 121B has a function of capturing a still image. It has a function to shoot movies. It has a function to automatically correct captured images (still images and movies). It has a function to save captured images in a recording medium (external or internal to a digital camera). It has a function to display the captured image on the display unit. Note that the functions of the camera illustrated in FIG. 121B are not limited to this, and can have various functions.

FIG. 121C shows a computer including a main body 900751, a housing 900752, and a display portion 9.
00753, keyboard 900754, external connection port 900755, pointing device 900756, input means 900757, sensors (force, displacement, position, velocity, acceleration,
Angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared rays 900758, microphone 900759, speaker 900760, LED lamp 900761, reader/writer 900762, etc. The computer illustrated in FIG. 121C has a function of displaying various information (still image, moving image, text image, etc.) on the display portion. It has a function to control processing by various software (programs). It has a communication function such as wireless communication or wired communication. It has the ability to connect to various computer networks using communication functions. It has a function of transmitting or receiving various data using a communication function. Note that the function of the computer illustrated in FIG. 121C is not limited to this, and can have various functions.

FIG. 128A shows a mobile computer including a main body 901411 and a display portion 901412.
, switch 901413, operation key 901414, infrared port 901415, input means 901416, sensor (force, displacement, position, speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, voice, time, hardness , electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell, or infrared) 901417, microphone 901418, speaker 901419, LED lamp 901420, etc. Figure 12
A mobile computer illustrated in 8A has a function of displaying various information (still images, moving images, text images, and the like) on a display portion. The display unit has a touch panel function. The display unit has a function of displaying a calendar, date, time, or the like. It has a function to control processing by various software (programs). It has a wireless communication function. It has a function to connect to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. Note that the functions of the mobile computer shown in FIG. 128A are not limited to this, and can have various functions.

FIG. 128B shows a portable image reproducing device (for example, a DVD reproducing device) equipped with a recording medium.
A main body 901431, a housing 901432, a display portion A 901433, and a display portion B 901
434, recording medium (DVD etc.) reading unit 901435, operation key 901436, speaker unit 901437, input means 901438, sensor 901439 (force, displacement, position, speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared), microphone 901440, LED lamp 901441, etc. The display portion A901433 can mainly display image information, and the display portion B901434 can mainly display character information.

FIG. 128C shows a goggle-type display, which includes a main body 901451 and a display portion 90145.
2, earphone 901453, support part 901454, input means 901455, sensor (force,
Displacement, position, velocity, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, sound,
901456, microphone 901457, speaker 901458, etc., including the function of measuring time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, smell or infrared rays. The goggle-type display shown in FIG. 128C has a function of displaying an image (a still image, a moving image, a text image, or the like) obtained from the outside on a display portion. note that,
The function of the goggle-type display shown in FIG. 128C is not limited to this, and can have various functions.

FIG. 129A shows a portable game machine including a housing 901511, a display portion 901512, a speaker portion 901513, operation keys 901514, a storage medium insertion portion 901515, and an input means 90.
1516, sensor (force, displacement, position, speed, acceleration, angular velocity, number of rotations, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity , tilt, vibration, odor or infrared measurement function) 901517, microphone 901518, LED lamp 901519, etc. The portable game machine shown in FIG. 129A has a function of reading a program or data recorded in a recording medium and displaying it on a display portion. It has a function to perform wireless communication with other portable game machines and share information. Note that the functions of the portable game machine shown in FIG. 129A are not limited to this, and can have various functions.

FIG. 129B shows a digital camera with a TV reception function, which includes a main body 901531, a display portion 901532, operation keys 901533, a speaker 901534, and a shutter 901535.
, image receiving unit 901536, antenna 901537, input means 901538, sensors (force, displacement, position, speed, acceleration, angular velocity, number of revolutions, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current , voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared) 901539, microphone 901540, LED lamp 901541, etc. A digital camera with a television receiver shown in FIG. 129B has a function of capturing a still image. It has a function to shoot movies. It has a function to automatically correct the captured image. It has a function to acquire various information from the antenna. It has a function to save captured images or information obtained from the antenna. It has a function of displaying a captured image or information obtained from an antenna on the display unit. Note that the functions of the digital camera with television receiver shown in FIG. 121(H) are not limited to this, and can have various functions.

FIG. 130 shows a portable game machine comprising a housing 901611, a first display section 901612, a second display section 901613, a speaker section 901614, operation keys 901615, and a recording medium insertion section 90.
1616, input means 901617, sensor (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemistry, sound, time, hardness, electric field, current, voltage, power,
including the ability to measure radiation, flow rate, humidity, gradient, vibration, odor or infrared) 901
618, microphone 901619, LED lamp 901620, etc. The portable game machine shown in FIG. 130 has a function of reading programs or data recorded on a recording medium and displaying it on the display unit. It has a function to perform wireless communication with other portable game machines and share information. Note that the functions of the portable game machine shown in FIG. 130 are not limited to this, and can have various functions.

As shown in FIGS. 121(A) to (C), FIGS. 128(A) to (C), FIGS. 129(A) to (C), and FIG. It is characterized by having a display section. An electronic device can have a display with a wide viewing angle.

Next, application examples of the semiconductor device will be described.

FIG. 122 shows an example in which a semiconductor device is integrated with a building. FIG. 122 includes a housing 900810, a display portion 900811, a remote control device 900812 as an operation portion, a speaker portion 900813, and the like. The semiconductor device is a wall-mounted type integrated with the building, and can be installed without requiring a large installation space.

FIG. 123 shows another example in which a semiconductor device is integrated with a building.
The display panel 900901 is attached integrally with the unit bath 900902 so that the bather can view the display panel 900901 . The display panel 900901 has a function of displaying information by being operated by the bather. It has a function that can be used as an advertisement or entertainment means.

Note that the semiconductor device includes not only the sidewalls of the unit bus 900902 shown in FIG.
It can be installed in various places. For example, it may be part of the mirror surface or integral with the bathtub itself. At this time, the shape of the display panel 900901 may be a mirror surface or the shape of the bathtub.

FIG. 124 shows another example in which a semiconductor device is integrated with a building. The display panel 901002 is attached so as to be curved according to the curved surface of the columnar body 901001 .
Note that the columnar body 901001 will be described here as a utility pole.

A display panel 901002 shown in FIG. 124 is provided at a position higher than the human viewpoint.
By installing the display panel 901002 on a building such as a utility pole that stands repeatedly outdoors, it is possible to advertise to an unspecified number of viewers. Here, the display panel 90100
In 2, it is easy to display the same image and instantaneously switch images by controlling from the outside, so extremely efficient information display and advertising effect can be expected. It can be said that the display panel 901002 provided with a self-luminous display element is useful as a highly visible display medium even at night. By installing the display panel 901002 on a utility pole, it is easy to secure power supply means for the display panel 901002 . In the event of an emergency such as a disaster, it can also serve as a means of quickly and accurately transmitting information to victims.

As the display panel 901002, for example, a display panel which displays an image by providing a switching element such as an organic transistor on a film substrate and driving the display element can be used.

In this embodiment, walls, pillars, and unit baths are used as examples of buildings, but the present embodiment is not limited to these, and semiconductor devices can be installed in various buildings.

Next, an example in which a semiconductor device is integrated with a moving object will be described.

FIG. 125 is a diagram showing an example in which a semiconductor device is integrated with an automobile. The display panel 901102 is integrally attached to the vehicle body 901101 of the automobile, and can on-demand display the operation of the vehicle body or information input from inside or outside the vehicle body. In addition, you may have a navigation function.

Note that the semiconductor device can be installed not only in the vehicle body 901101 shown in FIG. 125 but also in various places. For example, it may be integrated with a glass window, a door, a steering wheel, a shift lever, a seat, a room mirror, or the like. At this time, the shape of the display panel 901102 may be adapted to the shape of the object to be installed.

FIG. 126 is a diagram showing an example in which a semiconductor device is integrated with a train car.

FIG. 126(a) is a diagram showing an example in which a display panel 901202 is provided on the glass of a door 901201 of a train car. Compared to conventional paper advertisements, there is an advantage in that there is no labor cost required when switching advertisements. Since the display panel 901202 can instantaneously switch the image displayed on the display unit in response to a signal from the outside, for example, the image on the display panel can be switched for each time period when the passenger class of train passengers changes. Therefore, a more effective advertising effect can be expected.

FIG. 126(b) shows a glass window 901203 in addition to the glass of the door 901201 of the train car.
, and an example in which a display panel 901202 is provided on a ceiling 901204. FIG.
As described above, the semiconductor device can be easily installed in a place where installation was conventionally difficult, so that an effective advertising effect can be obtained. Since the semiconductor device can instantaneously switch images displayed on the display unit in response to a signal from the outside, the cost and time required for switching advertisements can be reduced, and more flexible advertisement operation and information transmission can be achieved. It becomes possible.

Note that the semiconductor device can be installed not only in the door 901201, the glass window 901203, and the ceiling 901204 shown in FIG. 126, but also in various places. For example, it may be integrated with a strap, a seat, a railing, a floor, or the like. At this time, the shape of the display panel 901202 may be adapted to the shape of the object to be installed.

FIG. 127 is a diagram showing an example in which a semiconductor device is integrated with a passenger airplane.

FIG. 127(a) shows a display panel 90130 on the ceiling 901301 above the seat of a passenger airplane.
2 is a diagram showing the shape in use when 2 is provided. The display panel 901302 is
It is integrally attached to the ceiling 901301 via a hinge portion 901303, and the expansion and contraction of the hinge portion 901303 enables passengers to view the display panel 901302. The display panel 901302 has a function of displaying information by being operated by a passenger. It has a function that can be used as an advertisement or entertainment means. As shown in FIG. 127(b), by folding the hinge portion and storing it in the ceiling 901301, consideration can be given to safety during takeoff and landing. note that,
By turning on the display element of the display panel in an emergency, it can be used as information transmission means and a guide light.

Note that the semiconductor device can be installed not only on the ceiling 901301 shown in FIG. 127 but also in various places. For example, it may be integrated with the seat, seat table, armrests, windows and the like. A large display panel that can be viewed by many people at the same time may be installed on the wall of the fuselage. At this time, the shape of the display panel 901302 may be adapted to the shape of the object to be installed.

In this embodiment, a train car body, a car body, and an airplane body are exemplified as moving bodies, but they are not limited to these.
It can be installed on various things such as trains (including monorails, railroads, etc.), ships, and the like. A semiconductor device can instantly switch the display of a display panel inside a mobile object by a signal from the outside. It is possible to use it for applications such as an advertisement display board, an information display board at the time of disaster occurrence, and the like.

In the present embodiment, descriptions have been made using various diagrams, but the contents described in each diagram (
may be part of it) shall apply, combine, or
Alternatively, replacement can be freely performed. Furthermore, in the figures described so far, more figures can be configured by combining each part with another part.

Similarly, the content (may be part of) described in each drawing of this embodiment may be applied, combined, replaced, etc. with respect to the content (may be part of) described in the drawing of another embodiment. can be done freely. Furthermore, in the drawings of this embodiment, more drawings can be configured by combining each part with another embodiment.

In addition, the present embodiment is an example of a case where the content (or part of it) described in another embodiment is embodied, an example of a slightly modified case, an example of a partially changed case, and an improved case. An example of the case,
An example of detailed description, an example of application, and an example of related parts are shown. Therefore, the contents described in other embodiments can be freely applied, combined, or replaced with this embodiment.

100 pixel 101 switch 102 switch 103 liquid crystal element 103 potential V
104 liquid crystal element 105 liquid crystal element 106 capacitive element 107 capacitive element 108 wiring 109 wiring 110 wiring 111 common electrode 150 pixel 151 switch 152 switch 153 liquid crystal element 154 liquid crystal element 155 liquid crystal element 156 capacitive element 157 capacitive element 158 wiring 159 wiring 160 wiring 161 capacitance Element 200 Pixel 201 Switch 202 Switch 203 Switch 203 Transistor 204 Liquid crystal element 205 Liquid crystal element 206 Liquid crystal element 207 Capacitor 208 Capacitor 209 Wiring 210 Wiring 211 Wiring 253 Transistor 260 Wiring 261 Wiring 262 Wiring 301 Switch 302 Switch 303 Transistor 309 Wiring 310 Wiring 313 Wiring 353 Transistor 356 Liquid crystal element 359 Capacitor 364 Wiring 400 Pixel 401 Switch 402 Switch 403 Liquid crystal element 404 Liquid crystal element 405 Liquid crystal element 406 Capacitor 407 Capacitor 408 Capacitor 409 Capacitor 410 Wiring 411 Wiring 412 Wiring 413 Wiring 414 Wiring 415 Wiring 416 Common electrode 417 Capacitor 450 Pixel 451 Switch 452 Switch 453 Liquid crystal element 454 Liquid crystal element 455 Liquid crystal element 456 Capacitor 457 Capacitor 458 Wiring 459 Wiring 460 Wiring 461 Common electrode 463 Capacitor line 465 Capacitor line 500 Pixel 501 Switch 502 Switch 503 Liquid crystal element 504 Liquid crystal element 505 Liquid crystal element 506 Liquid crystal element 507 Capacitance element 508 Capacitance element 509 Capacitance element 510 Wiring 511 Wiring 512 Wiring 550 Pixel 551 Switch 552 Switch 553 Switch 554 Liquid crystal element 555 Liquid crystal element 556 Liquid crystal element 557 Liquid crystal element 558 Capacitive element 559 Capacitor 560 Wiring 561 Wiring 562 Wiring 563 Wiring 565 Capacitor 566 Capacitor 572 Capacitor 584 Capacitor 600 Pixel 601 Switch 602 Switch 603 Liquid crystal element 604 Liquid crystal element 605 Liquid crystal element 606 Voltage dividing element 607 Voltage dividing element 608 Wiring 609 Wiring 610 Wiring 650 Pixel 651 Switch 652 Switch 653 Liquid crystal element 654 Liquid crystal element 655 Liquid crystal element 656 Voltage dividing element 657 Voltage dividing element 658 Switch 659 Switch 660 Wiring 661 Wiring 662 Wiring 700 Pixel 701 Switch 702 switch 703 liquid crystal element 704 liquid crystal element 705 liquid crystal element 706 transistor 707 transistor 708 wiring 709 wiring 710 wiring 750 pixel 751 switch 752 switch 753 liquid crystal element 754 liquid crystal element 755 liquid crystal element 756 transistor 757 transistor 758 wiring 759 wiring 760 wiring 761 wiring 762 capacitance Element 763 Capacitance element 764 Capacitance element 800 Pixel 801 Switch 802 Switch 803 Transistor 803 Liquid crystal element 804 Transistor 804 Liquid crystal element 805 Liquid crystal element 806 Liquid crystal element 807 Liquid crystal element 808 Wiring 809 Wiring 810 Wiring 811 Wiring 850 Pixel 851 Switch 852 Switch 853 Liquid crystal element 854 Liquid crystal element 855 Liquid crystal element 856 Transistor 857 Transistor 858 Wiring 859 Wiring 860 Wiring 861 Capacitor element 900 Pixel 901 Switch 902 Switch 903 Liquid crystal element 904 Liquid crystal element 905 Liquid crystal element 906 Liquid crystal element 907 Transistor 908 Transistor 909 Transistor 910 Wiring 911 Wiring 912 Wiring 101N Switch 101P switch 102N switch 102P switch 105a liquid crystal element 105b liquid crystal element 151N switch 152N switch 1911 signal line driving circuit 1912 scanning line driving circuit 1913 pixel portion 1914 pixel 201N switch 202N switch 211A wiring 251N switch 252N switch 301N switch 302N switch 401N switch 402N switch 451N Switch 452N Switch 501N Switch 502N Switch 551N Switch 552N Switch 601N Switch 602N Switch 651N Switch 652N Switch 701N Switch 702N Switch 751N Switch 752N Switch 801N Switch 802N Switch 851N Switch 852N Switch 901N Switch 902N Switch 107320 FPC
107321 IC chip 170100 Substrate 170101 Pixel portion 170102 Pixel 170103 Scanning line side input terminal 170104 Signal line side input terminal 170105 Scanning line driving circuit 170106 Signal line driving circuit 170200 FPC
170201 IC chip 170300 Substrate 170301 Pixel section 170303 Signal line drive circuit 170310 Substrate 170320 FPC
１７０３２１ シール材１７０４０１ ＩＣチップ１７０３０２ａ 走査線駆動回路１７０３０２ｂ 走査線駆動回路１７０５０１ａ ＩＣチップ１７０５０１ｂ ＩＣチップ１８０１００ 表示装置１８０１０１ 画素部１８０１０２ 画素１８０１０３ 信号線駆動回路１８０１０４ 走査線駆動回路１８０７０１ 画像１８０７０２ 画像１８０７０３ 画像１８０７０４ 画像１８０７０５ 画像１８０７１１ 画像１８０７１２ 画像１８０７１３ 画像１８０７１４ 画像１８０７１５ 画像１８０７１６ 画像１８０７１７ 画像１８０７２１ 画像１８０７２２ 画像１８０７２３ 画像１８０７２４ 画像１８０７２５ 画像１８０８０１ 画像１８０８０２ 画像１８０８０３ 画像１８０８０４ 領域１８０８０５ 領域１８０８０６ 領域１８０８１１ 画像１８０８１２ 画像１８０８１３ 画像１８０８１４ 領域１８０８１５ 領域１８０８１６ 領域１８０８２１ 画像１８０８２２ 画像１８０８２３ 画像１８０８２４ 領域１８０８２５ 領域１８０８２６ 領域１８０８３１ 画像１８０８３２ 画像１８０８３３ 画像１８０８３４ 領域１８０８３５ 領域１８０８３６ 領域１８０８４１ 領域１８０８４２ 点１８０９０１ 画像１８０９０２ 画像１８０９０３ 画像１８０９０４ 領域１８０９０５ 領域１８０９０６ 領域１８０９０７ 範囲１８０９０８ 範囲１８０９０９ ベクトル１８０９１０ 変位ベクトル１８０９１１ 画像１８０９１２画像１８０９１３ 画像１８０９１４ 画像１８０９１５ 領域１８０９１６ 領域１８０９１７ 領域１８０９１８ 領域１８０９１９ 範囲１８０９２０ 範囲１８０９２１ 動きベクトル１８０９２２ 変位ベクトル１８０９２３ 変位ベクトル１８１０００ 外部画像信号１８１００１ 水平同期信号１８１００２ 垂直同期信号１８１００３ 画像信号１８１００４ ソーススタートパルス１８１００５ ソースクロック１８１００６ ゲートStart pulse 181007 Gate clock 181008 Frequency control signal 181011 Control circuit 181012 Source driver 181013 Gate driver 181014 Display area 181015 Image processing circuit 181016 Timing generation circuit 181020 Detection circuit 181021 First memory 181022 Second memory 181023 Third memory Memory 181023 Image signal 181024 Brightness control circuit 181025 High-speed processing circuit 181026 Memory 20101 Backlight unit 20102 Diffusion plate 20103 Light guide plate 20104 Reflector plate 20105 Lamp reflector 20106 Light source 20107 Liquid crystal panel 20201 Backlight unit 20202 Lamp reflector 20203 1 Cold cathode tube 1 Backlight unit 202 20212 lamp reflector 20213 light emitting diode (LED)
20213W light emitting diode 20221 backlight unit 20222 lamp reflector 20223 light emitting diode (LED)
20224 Light Emitting Diode (LED)
20225 Light Emitting Diode (LED)
20231 backlight unit 20232 lamp reflector 20233 light emitting diode (LED)
20234 Light Emitting Diode (LED)
20235 Light Emitting Diode (LED)
20300 Polarizing film 20301 Protective film 20302 Substrate film 20303 PVA polarizing film 20304 Substrate film 20305 Adhesive layer 20306 Release film 20401 Image signal 20402 Control circuit 20403 Signal line driving circuit 20404 Scanning line driving circuit 20405 Pixel section 20406 Illumination means 20407 Power supply 20408 Driving Circuit portion 20410 Scanning line 20412 Signal line 20431 Shift register 20432 Latch 20433 Latch 20434 Level shifter 20435 Buffer 20441 Shift register 20442 Level shifter 20443 Buffer 20500 Backlight unit 20501 Diffusion plate 20502 Light shielding plate 20503 Lamp reflector 20504 Light source 1 Light source Back panel 20505 Liquid crystal light source 20505 Plate 20512 Light shielding plate 20513 Lamp reflector 20514 Light source 20515 Liquid crystal panel 20514a Light source (R)
20514b light source (G)
20514c Light source (B)
４０１００ 画素４０１０１ トランジスタ４０１０２ 液晶素子４０１０３ 容量素子４０１０４ 配線４０１０５ 配線４０１０６ 配線４０１０７ 対向電極４０１１０ 画素４０１１１ トランジスタ４０１１２ 液晶素子４０１１３ 容量素子４０１１４ 配線４０１１５ 配線４０１１６ 配線４０２００ 画素（画素４０２００ 画素４０２０１ トランジスタ４０２０２ 液晶素子４０２０３ 容量素子４０２０４配線４０２０５ 配線４０２０６ 配線４０２０７ 対向電極４０２１０ 画素４０２１１ トランジスタ４０２１２ 液晶素子４０２１３ 容量素子４０２１４ 配線４０２１５ 配線４０２１６ 配線４０２１７ 対向電極４０３００ サブ画素４０３０１ トランジスタ４０３０２ 液晶素子４０３０３ 容量素子４０３０４ 配線４０３０５ 配線４０３０６ 配線４０３０７ 対向電極４０３１０ サブ画素４０３１１ トランジスタ４０３１２ 液晶素子４０３１３ 容量素子４０３１５ 配線４０３１６ 配線４０３１７ 対向電極４０３２０ 画素５０１００ 液晶層５０１０１ 基板５０１０２ 基板５０１０３ 偏光板５０１０４ 偏光板５０１０５ 電極５０１０６ 電極５０２００ 液晶層５０２０１ 基板５０２０２ 基板５０２０３ 偏光板５０２０４ 偏光板５０２０５ 電極５０２０６電極５０２１０ 液晶層５０２１１ 基板５０２１２ 基板５０２１３ 偏光板５０２１４ 偏光板５０２１５ 電極５０２１６ 電極５０３００ 液晶層５０３０１ 基板５０３０２ 基板５０３０３ 偏光板５０３０４ 偏光板５０３０５ 電極５０３０６ 電極５０３１０ 液晶層５０３１１ 基板５０３１２ 基板５０３１３ 偏光板５０３１４ 偏光板５０３１５ 電極５０３１６ 電極５０４００ 液晶層５０４０１ 基板５０４０２ 基板５０４０３ 偏光板５０４０４ 偏光板５０４０５ 電極５０４０６ 電極５０４１０ 液晶層５０４１１ 基板５０４１２ 基板５０４１３ 偏光板５０４１４ 偏光板５０４１５ 電極５０４１６ 電極５０４１７ 絶縁膜５０５０１ 画素電極５０５０３ 突起物５０６０１ 画素電極５０６０２ 画素Electrode 50611 Pixel electrode 50612 Pixel electrode 50631 Pixel electrode 50632 Pixel electrode 50641 Pixel electrode 50642 Pixel electrode 50701 Pixel electrode 50702 Pixel electrode 50711 Pixel electrode 50712 pixel electrode 50731 pixel electrode 50732 pixel electrode 50741 pixel electrode 50742 pixel electrode 502117 protrusion 502118 protrusion 10101 substrate 10102 insulating film 10103 conductive layer 10104 insulating film 10105 semiconductor layer 10106 semiconductor layer 10107 conductive layer 10101 conductive layer 10118 alignment film 10109 10112 orientation film 10113 conductive layer 10114 light shielding film 10115 color filter 10116 substrate 10117 spacer 10118 liquid crystal molecule 10201 substrate 10202 insulating film 10203 conductive layer 10204 insulating film 10205 semiconductor layer 10206 semiconductor layer 10207 conductive layer 10208 insulating film 10209 conductive layer 10209 orientation film 10201 Film 10213 Conductive layer 10214 Light shielding film 10215 Color filter 10216 Substrate 10217 Spacer 10218 Liquid crystal molecule 10219 Alignment control projection 10231 Substrate 10232 Insulating film 10233 Conductive layer 10234 Insulating film 10235 Semiconductor layer 10236 Semiconductor layer 10237 Conductive layer 10238 Insulating film 102340 Conductive layer 102340 film 10242 alignment film 10243 conductive layer 10244 light shielding film 10245 color filter 10246 substrate 10247 spacer 10248 liquid crystal molecule 10249 part 10301 substrate 10302 insulating film 10303 conductive layer 10304 insulating film 10305 semiconductor layer 10306 semiconductor layer 10307 conductive layer 10310 10308 conductive layer 10308 alignment film 10308 Film 10312 Alignment film 10314 Light shielding film 10315 Color filter 10316 Substrate 10317 Spacer 10318 Liquid crystal molecules 10331 Substrate 10332 Insulating film 10333 Conductive layer 10334 Insulating film 10335 Semiconductor layer 10336 Semiconductor layer 10337 Conductive layer 10338 Insulating film 10339 Conductive layer 10334 Alignment film 31304 2 Alignment film Conductive layer 10344 Light shielding film 10345 Color filter 10346 Substrate 10347 Spacer 10348 Liquid crystal molecule 10349 Insulating film 10401 Scanning line 10402 Video signal line 10403 Capacitor line 10404 Transistor 10405 Pixel electrode 10406 Pixel capacitor 10501 Scanning line 10502 Video signal line 10503 Pixel Capacitor line 10504 electrode 105 06 pixel capacitor 10507 alignment control protrusion 10511 scanning line 10512 video signal line 10513 capacitor line 10514 transistor 10515 pixel electrode 10516 pixel capacitor 10517 section 10601 scanning line 10602 video signal line 10603 common electrode 10604 transistor 10605 pixel electrode 10611 scanning line 10612 video signal line 10613 common electrode 10614 transistor 10615 pixel electrode 106013 common electrode 70101 substrate 70102 alignment film 70103 roller 70104 rubbing roller 70105 sealing material 70106 spacer 70107 substrate 70108 alignment film 70109 liquid crystal 70110 resin 70113 liquid crystal injection port 70108 Roller 70305 Sealing material 70306 Spacer 70307 Substrate 70308 Alignment film 70309 Liquid crystal 80300 Pixel 80301 Switching transistor 80302 Driving transistor 80303 Capacitive element 80304 Light emitting element 80305 Signal line 80306 Scanning line 80307 Power supply line 80308 Common electrode 80309 Rectifying transistor 80400 Pixel switching element 80400 80402 Driving transistor 80403 Capacitive element 80404 Light emitting element 80405 Signal line 80406 Scanning line 80407 Power supply line 80408 Common electrode 80409 Rectifying element 80410 Scanning line 80500 Pixel 80501 Switching transistor 80502 Driving transistor 80503 Capacitive element 80504 Light emitting element 80505 Scanning line Signal line 80506 80507 power supply line 80508 common electrode 80509 erasing transistor 80510 scanning line 80600 driving transistor 80601 switch 80602 switch 80603 switch 80604 capacitive element 80605 capacitive element 80611 signal line 80612 power supply line 80613 scanning line 80614 scanning line 80620 light emitting element 80621 common electrode 80700 Transistor 80701 Switch 80702 Switch 80703 Switch 80704 Capacitive element 80711 Signal line 80712 Power supply line 80713 Scanning line 80714 Scanning line 80730 Light emitting element 80731 Common electrode 80734 Scanning line 70101 Substrate 70102 Alignment film ７０１０３ ローラ７０１０４ ラビング用ローラ７０１０５ シール材７０１０６ スペーサ７０１０７ 基板７０１０８ 配向膜７０１０９ 液晶７０１１０ 樹脂７０１１３ 液晶注入口７０３０１ 基板７０３０２ 配向膜７０３０３ ローラ７０３０４ ラビング用ローラ７０３０５ シール材７０３０６ スペーサ７０３０７ 基板７０３０８ 配向膜７０３０９ 液晶８０３００ 画素８０３０１ Switching transistor 80302 Driving transistor 80303 Capacitive element 80304 Light emitting element 80305 Signal line 80306 Scanning line 80307 Power supply line 80308 Common electrode 80309 Rectifying element 80400 Pixel 80401 Switching transistor 80402 Driving transistor 80403 Capacitive element 80404 Light emitting element 80405 Signal line 80406 Scanning line 80407 power supply line 80408 common electrode 80409 rectifying element 80410 scanning line 80500 pixel 80501 switching transistor 80502 driving transistor 80503 capacitive element 80504 light emitting element 80505 signal line 80506 scanning line 80507 power supply line 80508 common electrode 80509 erasing transistor 80510 scanning driving line 80600 Transistor 80601 Switch 80602 Switch 80603 Switch 80604 Capacitance element 80605 Capacitance element 80611 Signal line 80612 Power supply line 80613 Scanning line 80614 Scanning line 80620 Light emitting element 80621 Common electrode 80700 Driving transistor 80701 Switch 80702 Switch 80703 Switch 80704 Capacitive element 80711 2 Power supply signal line 80612 ８０７１３ 走査線８０７１４ 走査線８０７３０ 発光素子８０７３１ 共通電極８０７３４ 走査線６０１０５ トランジスタ６０１０６ 配線６０１０７ 配線６０１０８ トランジスタ６０１１１ 配線６０１１２ 対向電極６０１１３ コンデンサ６０１１５ 画素電極６０１１６ 隔壁６０１１７ 有機導電体膜６０１１８ 有機薄膜６０１１９ 基板６０２００ 基板６０２０１ 配線６０２０２ Wiring 60203 Wiring 60204 Wiring 60205 Transistor 60206 Transistor 60207 Transistor 60208 Pixel electrode 60211 Partition 60212 Organic conductor film 60213 Organic thin film 6021 ４ 対向電極６０３００ 基板６０３０１ 配線６０３０２ 配線６０３０３ 配線６０３０４ 配線６０３０５ トランジスタ６０３０６ トランジスタ６０３０７ トランジスタ６０３０８ トランジスタ６０３０９ 画素電極６０３１１ 配線６０３１２ 配線６０３２１ 隔壁６０３２２ 有機導電体膜６０３２３ 有機薄膜６０３２４ 対向電極１９０１０１ 陽極１９０１０２ 陰極１９０１０３ 正孔輸送領域190104 Electron transporting region 190105 Mixing region 190106 Region 190107 Region 190108 Region 190109 Region 190260 Transfer chamber 190261 Transfer chamber 190262 Load chamber 190263 Unload chamber 190264 Intermediate treatment chamber 190265 Sealing treatment chamber 190266 Transfer means 19029 Heating means 190267 Transfer means 19 Processing chamber 190270 Film formation processing chamber 190271 Film formation chamber 190272 Plasma processing chamber 190273 Film formation processing chamber 190274 Film formation processing chamber 190276 Film formation processing chamber 190380 Evaporation source holder 190381 Evaporation source 190382 Distance sensor 190383 Articulated arm 190384 Material supply pipe 190386 Substrateステージ１９０３８７ 基板チャック１９０３８８ マスクチャック１９０３８９ 基板１９０３９０ シャドーマスク１９０３９１ 天板１９０３９２ 底板１９０２７７ａ ゲートバルブ１９０３８１ａ 蒸発源１９０３８１ｂ 蒸発源１９０３８１ｃ 蒸発源１９０３８５ａ 材料供給源１９０３８５ｂ 材料供給源１９０３８５ｃ 材料供給源１２０１００ 電極層１２０１０２ 電界発光層１２０１０３ 電極Layer 120104 Insulating film 120105 Insulating film 120106 Insulating film 120200 Electrode layer 120201 Luminous material 120202 Electroluminescent layer 120203 Electrode layer 120204 Insulating film 120205 Insulating film 120206 Insulating film 130100 Rear projection display device 130101 Screen panel 130102 Speaker 1 Operation switch 4 13010 130111 projector unit 130112 mirror 130200 front projection display device 130201 projection optical system 130301 light source unit 130302 light source lamp 130303 light source optical system 130304 modulation unit 130305 dichroic mirror 130306 total reflection mirror １３０３０８ 表示パネル１３０３０９ プリズム１３０３１０ 投射光学系１３０４００ 変調ユニット１３０４０１ ダイクロイックミラー１３０４０２ ダイクロイックミラー１３０４０３ 全反射ミラー１３０４０４ 偏光ビームスプリッタ１３０４０５ 偏光ビームスプリッタ１３０４０６ 偏光ビームスプリッタ１３０４０７ 反射型表示パネル１３０４１１ 投射光学系１３０５０１ ダイクロイックミラー１３０５０２ ダイクロイックミラー１３０５０３ red light dichroic mirror 130504 retardation plate 130505 color filter plate 130506 microlens array 130507 display panel 130508 display panel 130509 display panel 130511 projection optical system 900101 display panel 900102 pixel section 900103 scanning line drive circuit 900104 signal line drive circuit 900111 circuit board 9 Control circuit 900113 Signal division circuit 900114 Connection wiring 900201 Tuner 900202 Video signal amplification circuit 900203 Video signal processing circuit 900205 Audio signal amplification circuit 900206 Audio signal processing circuit 900207 Speaker 900208 Control circuit 900209 Input unit 900212 Control circuit 900213 Signal division circuit 900301 Housing 2900 display screen 900303 speaker 900304 operation switch 900305 input means 900306 sensor 900307 microphone 900310 charger 900312 housing 900313 display section 900316 operation keys 900317 speaker section 900318 input means 900319 )
900320 Microphone 900401 Display panel 900402 Printed wiring board 900403 Pixel section 900404 Scanning line driving circuit 900405 Scanning line driving circuit 900406 Signal line driving circuit 900407 Controller 900408 Central processing unit (CPU)
900409 memory 900410 power supply circuit 900411 audio processing circuit 900412 transmission/reception circuit 900413 flexible printed circuit board (FPC)
900414 Interface (I/F) section 900415 Antenna port 900416 VRAM
900417 DRAM
900418 flash memory 900419 interface (I/F) unit 900420 control signal generation circuit 900421 decoder 900421 one-way decoder 900422 register 900423 arithmetic circuit 900424 RAM
900425 Input means 900426 Microphone 900427 Speaker 900428 Antenna 900501 Display panel 900513 FPC
900530 housing 900531 printed circuit board 900532 speaker 900533 microphone 900534 transmission/reception circuit 900535 signal processing circuit 900536 input means 900537 battery 900539 housing 900541 sensor 900600 mobile phone 900601 main body (A)
900602 Body (B)
900603 Housing 900604 Operation switches 900605 Microphone 900606 Speaker 900607 Circuit board 900608 Display panel (A)
900609 Display panel (B)
900610 hinge 900611 sensor 900612 input means 900711 housing 900712 support base 900713 display section 900714 input means 900715)
９００７１６ マイクロフォン９００７１７ スピーカ９００７１８ 操作キー９００７１９ ＬＥＤランプ９００７３１ 本体９００７３２ 表示部９００７３３ 受像部９００７３４ 操作キー９００７３５ 外部接続ポート９００７３６ シャッター９００７３７ 入力手段９００７３８ センサ９００７３９ マイクロフォン９００７４０ スピーカ９００７４１ ＬＥＤランプ９００７５１ 本体９００７５２ 筐体９００７５３ 表示部９００７５４ キーボード９００７５５ external connection port 900756 pointing device 900757 input means 900758)
９００７５９ マイクロフォン９００７６０ スピーカ９００７６１ ＬＥＤランプ９００７６２ リーダ／ライタ９００８１０ 筐体９００８１１ 表示部９００８１２ リモコン装置９００８１３ スピーカ部９００９０１ 表示パネル９００９０２ ユニットバス９０１００１ 柱状体９０１００２ 表示パネル９０１１０１ 車体９０１１０２ 表示パネル９０１２０１ ドア９０１２０２ 表示パネル９０１２０３ ガラス窓９０１２０４ 天井901301 ceiling 901302 display panel 901303 hinge part 901411 main body 901412 display part 901413 switch 901414 operation key 901415 infrared port 901416 input means 901417)
901418 Microphone 901419 Speaker 901420 LED lamp 901431 Main body 901432 Housing 901433 Display A
901434 Display B
901435 section 901436 operation key 901437 speaker section 901438 input means 901439 )
901440 microphone 901441 LED lamp 901451 main body 901452 display unit 901453 earphone 901454 support unit 901455 input means 901456)
901457 microphone 901458 speaker 901511 housing 901512 display unit 901513 speaker unit 901514 operation key 901515 storage medium insertion unit 901516 input means 901517 )
９０１５１８ マイクロフォン９０１５１９ ＬＥＤランプ９０１５３１ 本体９０１５３２ 表示部９０１５３３ 操作キー９０１５３４ スピーカ９０１５３５ シャッター９０１５３６ 受像部９０１５３７ アンテナ９０１５３８ 入力手段９０１５３９ センサ９０１５４０ マイクロフォン９０１５４１ ＬＥＤランプ９０１６１１ 筐体９０１６１２ 表示部９０１６１３ 表示部９０１６１４ スピーカ部９０１６１５ 操作キー９０１６１６ 記録媒体Insertion section 901617 Input means 901618)
901619 Microphone 901620 LED lamp

Claims (1)

A liquid crystal display device in which pixels are arranged,
the pixel has first and second switches, first to third liquid crystal elements, and first and second capacitive elements;
a first wiring, one of the electrodes of the first liquid crystal element and one of the terminals of the first capacitive element are electrically connected via a first switch;
a second wiring, one of the electrodes of the second liquid crystal element and one of the terminals of the second capacitive element are electrically connected via a second switch;
the other of the terminals of the first capacitor is electrically connected to one of the other of the terminals of the second capacitor and the third liquid crystal element;
A liquid crystal display device, wherein the other electrodes of the first to third liquid crystal elements are electrically connected to a common electrode.

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