JP5696190B2 - Display device - Google Patents

Description

The present invention relates to an active matrix display device in which input of a video signal to a pixel can be controlled by a driver circuit.

In an active matrix display device, a switching element and a display element are provided in each of tens to millions of pixels arranged in a matrix. With the switching element,
Even after the video signal is input to the pixel, voltage application or current supply to the display element is maintained to some extent, so the active matrix type can flexibly cope with the enlargement and high definition of the panel. Display devices are becoming mainstream.

As typical driver circuits included in the display device, there are a scan line driver circuit and a signal line driver circuit. The scanning line driving circuit selects a plurality of pixels for each line or for each plurality of lines. Then, the video signal input to the pixels included in the selected line is controlled by the signal line driver circuit.

The scanning line driving circuit and the signal line driving circuit are required to be driven at a high frequency. In particular, the signal line driver circuit needs to input a video signal to all pixels in the line while the pixels of each line are selected by the scanning line driver circuit. Therefore, the driving frequency of the signal line driver circuit is much higher than that of the scanning line driver circuit. For example, in the case of a VGA active matrix display device, the driving frequency of the signal line driving circuit is generally required to be about 25 MHz. Further, in recent years, active matrix display devices tend to increase the number of pixels in one line in order to display higher definition, higher resolution, and multi-gradation images. Therefore, the signal line driving circuit is required to be driven at a higher speed, and the problem of high power consumption due to the high driving frequency is emerging.

Therefore, in Patent Document 1 below, in order to reduce the power consumption of the signal line driving circuit, display data corresponding to two adjacent scanning lines are compared, and if they match, the display data is not transferred to the signal line driving circuit. A liquid crystal display device is described.

In Patent Document 2 below, the control IC is arranged so that the output pin group to the signal line driving circuit is close to the signal line driving circuit, thereby shortening the wiring between the control IC and the signal line driving circuit. Describes a liquid crystal display device that suppresses power consumption caused by wiring capacitance.

Japanese Patent No. 3338259 Japanese Patent No. 3593392

By the way, when actually displaying an image, it is naturally expected that there will be discontinuous lines of matching data. However, the technique described in Patent Document 1 can only compare data corresponding to adjacent lines. For this reason, even if the data of the input video signal is consistent in a plurality of lines, if even one line corresponding to different data exists between the plurality of lines, the video signal to the signal line driver circuit is Input cannot be omitted.

In addition, there may be a case where a plurality of groups of a plurality of lines corresponding to the same data are mixed, such as a group of a plurality of lines having the same data and a group of a plurality of lines having different data. . Also in this case, since the technique described in Patent Document 1 can only compare data corresponding to adjacent lines, the input of the video signal to the signal line driver circuit cannot be omitted.

Therefore, even if the technique described in Patent Document 1 is used, there is a problem that the power consumption of the signal line driver circuit and the power consumption of the entire display device cannot be efficiently suppressed.

Further, as in Patent Document 2, there is a problem that there is a limit to reducing the power consumption of the entire display device only by devising the wiring.

In view of the above problems, it is an object of the present invention to provide an active matrix display device that can reduce power consumption of a signal line driver circuit and thus power consumption of the entire device.

The display device of the present invention includes a plurality of memory circuits in a driver circuit which can write data of a video signal input to a pixel in one line period and can hold the data. The memory circuit includes a plurality of memory elements, and holds data input to pixels for one line in the plurality of memory elements. The data stored in each storage circuit is input as a video signal to the corresponding line of pixels. Since the display device of the present invention includes two or more memory circuits in the driver circuit, video signal data corresponding to two or more line periods that appear discontinuously can be held in parallel in the memory circuit. . Note that the line period means a period in which pixels of each line are selected by the scan line driver circuit and a video signal is input to the selected pixels.

Further, the display device of the present invention reads from the memory a video signal data corresponding to each line period, a memory capable of storing video signal data corresponding to a plurality of line periods or a plurality of frame periods, A data comparison unit for comparing with video signal data corresponding to another line period;

The data comparison unit controls writing and holding of data in each memory circuit in accordance with the comparison result. Specifically, the data comparison unit extracts a plurality of line periods in which the data match by comparing the data of the video signal corresponding to each line period. The data comparison unit writes the matching data to the storage circuit, and then the video signal having the data is
The data is held in the memory circuit without being rewritten until it is inputted to the pixel in all the extracted line periods. In addition, when the input of the video signal in all the extracted line periods is completed, the data comparison unit can rewrite the data held in the storage circuit with another data.

Note that the display device of the present invention includes, for example, a liquid crystal display device, a light-emitting device including a light-emitting element typified by an organic light-emitting element (OLED) in each pixel, and a DMD (Digital Micromirror).
r Device), PDP (Plasma Display Panel), FED (
An active matrix display device such as Field Emission Display) is included in the category. A passive matrix display device is also included.

Note that a variety of switches can be used as a switch described in this document (specification, claims, drawings, or the like). Examples include electrical switches and mechanical switches. That is, it is only necessary to be able to control the current flow, and is not limited to a specific one. For example, as a switch, a transistor (for example, bipolar transistor, MOS transistor, etc.), a diode (for example, PN diode, PIN diode, Schottky diode, MIM (Metal Insulator Metal) diode, MI
S (Metal Insulator Semiconductor) diodes, diode-connected transistors, etc.), thyristors, or the like can be used. Alternatively, a logic circuit combining these can be used as a switch.

In the case where a transistor is used as a switch, the transistor operates as a mere switch, and thus the polarity (conductivity type) of the transistor is not particularly limited. However, when it is desired to suppress off-state current, it is desirable to use a transistor having a polarity with smaller off-state current. As a transistor with low off-state current, a transistor having an LDD region, a transistor having a multi-gate structure, and the like can be given. Alternatively, an N-channel transistor is preferably used in the case where the transistor operates as a switch when the potential of the source terminal of the transistor is close to the potential of the low potential power supply (Vss, GND, 0 V, or the like). On the other hand, it is desirable to use a P-channel transistor when operating in a state where the potential of the source terminal is close to the potential of the high potential side power supply (Vdd or the like). This is because when the N-channel transistor operates with the source terminal close to the potential of the low-potential side power supply, and the P-channel transistor operates with the source terminal close to the potential of the high-potential side power supply, This is because the absolute value of can be increased. Moreover, since the source follower operation is rarely performed, the output voltage is rarely reduced.

Note that CMO using both N-channel and P-channel transistors
An S-type switch may be used as the switch. When a CMOS switch is used, a current flows when one of the P-channel transistor and the N-channel transistor is turned on, so that the switch can easily function as a switch. For example, the voltage can be appropriately output regardless of whether the voltage of the input signal to the switch is high or low. Furthermore, since the voltage amplitude value of the signal for turning on / off the switch can be reduced, the power consumption can be reduced.

Note that when a transistor is used as the switch, the switch includes an input terminal (one of a source terminal or a drain terminal), an output terminal (the other of the source terminal or the drain terminal),
And a terminal for controlling conduction (gate terminal). On the other hand, when a diode is used as the switch, the switch may not have a terminal for controlling conduction. Therefore, the use of a diode as a switch rather than a transistor can reduce the wiring for controlling the terminal.

In addition, in this document (specifications, claims, drawings, etc.), when it is explicitly stated that A and B are connected, A and B are electrically connected And A and B
And A and B are directly connected to each other. Here, A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, in the configuration disclosed in this document (specifications, claims, drawings, etc.), it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or text, but is shown in the figure or text. Including those other than connection relations.

For example, when A and B are electrically connected, an element (for example, a switch, a transistor, a capacitor, an inductor, a resistance element, a diode, or the like) that enables electrical connection between A and B is provided. 1 or more may be arranged between A and B. Alternatively, when A and B are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.), a signal conversion circuit that enables functional connection between A and B (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes signal potential level), voltage source, current source, switching circuit , Amplifier circuits (circuits that can increase signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits,
One or more control circuits and the like may be arranged between A and B. Alternatively, when A and B are directly connected, A and B may be directly connected without sandwiching other elements or other circuits between A and B.

Note that in the case where it is explicitly described that A and B are directly connected, when A and B are directly connected (that is, another element or other circuit between A and B). ) And A and B are electrically connected (that is, A and B are connected with another element or another circuit sandwiched between them). ).

Note that in the case where it is explicitly described that A and B are electrically connected, another element is connected between A and B (that is, between A and B). Or when A and B are functionally connected (that is, they are functionally connected with another circuit between A and B). And A and B are directly connected (
That is, it is assumed that A and B are connected without interposing another element or another circuit). That is, when it is explicitly described that it is electrically connected, it is the same as when it is explicitly only described that it is connected.

Note that a display element, a display device that is a device including a display element, a light-emitting element, and a light-emitting device that is a device including a light-emitting element can have various modes and include various elements. For example, as a display element, a display device, a light-emitting element, or a light-emitting device, an EL element (an EL element including an organic substance and an inorganic substance, an organic EL element, an inorganic EL element), an electron-emitting element, a liquid crystal element, electronic ink, an electrophoretic element, Grating light valve (GLV), plasma display (P
DP, a digital micromirror device (DMD), a piezoelectric ceramic display, a carbon nanotube, and other display media whose contrast, luminance, reflectance, transmittance, and the like change due to an electromagnetic action can be used. An EL display is used as a display device using an EL element, and a field emission display (FED) or a SED type flat display (SED: Surface-c) is used as a display device using an electron-emitting device.
As a display device using a liquid crystal element, such as an induction electron-emitter display, a liquid crystal display (transmissive liquid crystal display, transflective liquid crystal display, reflective liquid crystal display, direct view liquid crystal display, projection liquid crystal display), electronic ink, There is electronic paper as a display device using an electrophoretic element.

By using a catalyst (such as nickel) when producing microcrystalline silicon,
It becomes possible to further improve the crystallinity and manufacture a transistor with good electrical characteristics. At this time, crystallinity can be improved only by applying heat treatment without using a laser.
As a result, a part of the gate driver circuit (scanning line driver circuit) and the source driver circuit (analog switch or the like) can be integrally formed on the substrate. Further, when a laser is not used for crystallization, unevenness in crystallinity of silicon can be suppressed. Therefore, a beautiful image can be displayed.

However, it is possible to produce polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel).

Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like.
Accordingly, a transistor with small variations in characteristics, size, shape, and the like, high current supply capability, and small size can be manufactured. When these transistors are used, low power consumption of the circuit or high integration of the circuit can be achieved.

Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO
A transistor having a compound semiconductor or an oxide semiconductor such as a thin film transistor in which these compound semiconductor or oxide semiconductor is thinned can be used.
Accordingly, the manufacturing temperature can be lowered, and for example, the transistor can be manufactured at room temperature. As a result, the transistor can be formed directly on a substrate having low heat resistance, such as a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors can be used not only for a channel portion of a transistor but also for other purposes. For example, these compound semiconductors or oxide semiconductors can be used as resistance elements, pixel electrodes, and transparent electrodes. Furthermore, since these can be formed or formed simultaneously with the transistor, cost can be reduced.

Alternatively, a transistor formed using an inkjet method or a printing method can be used. By these, it can manufacture at room temperature, manufacture at a low vacuum degree, or can manufacture on a large sized board | substrate. Further, since the transistor can be manufactured without using a mask (reticle), the layout of the transistor can be easily changed. Furthermore, since it is not necessary to use a resist, the material cost is reduced and the number of processes can be reduced. Further, since a film is formed only on a necessary portion, the material is not wasted and cost can be reduced as compared with a manufacturing method in which etching is performed after film formation on the entire surface.

Alternatively, a transistor including an organic semiconductor or a carbon nanotube can be used. Thus, a transistor can be formed over a substrate that can be bent. Therefore, it can be strong against impact.

In addition, transistors with various structures can be used. For example, a MOS transistor, a junction transistor, a bipolar transistor, or the like can be used as the transistor described in this document (the specification, the claims, the drawings, or the like). By using a MOS transistor, the size of the transistor can be reduced. Therefore, a large number of transistors can be mounted. By using a bipolar transistor, a large current can flow. Therefore, the circuit can be operated at high speed.

Note that a MOS transistor, a bipolar transistor, or the like may be formed over one substrate. Thereby, low power consumption, miniaturization, high-speed operation, etc. can be realized.

  In addition, various transistors can be used.

Note that various types of substrates on which transistors are formed can be used,
It is not limited to a specific thing. As a substrate on which a transistor is formed, for example,
Single crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood substrate, cloth substrate (natural fiber (silk, cotton, hemp), synthetic fiber (nylon,
Polyurethane, polyester) or recycled fiber (including acetate, cupra, rayon, recycled polyester), leather substrate, rubber substrate, stainless steel substrate, stainless steel foil substrate, and the like can be used. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. Alternatively, a transistor may be formed over a certain substrate, and then the transistor may be transferred to another substrate, and the transistor may be disposed over another substrate. As a substrate to which the transistor is transferred, a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (natural fiber (silk, cotton, hemp), Use synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. Can do. Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. Alternatively, a transistor may be formed using a certain substrate, and the substrate may be polished and thinned. As substrates to be polished, single crystal substrates, SOI substrates, glass substrates, quartz substrates, plastic substrates, paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk, cotton, hemp), synthetic fibers) (Including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foils, etc. can be used. . Alternatively, the skin (skin surface, dermis) or subcutaneous tissue of an animal such as a human may be used as the substrate. By using these substrates, it is possible to form a transistor with good characteristics, a transistor with low power consumption, manufacture a device that is not easily broken, impart heat resistance, reduce weight, or reduce thickness.

Note that the structure of the transistor can take a variety of forms. It is not limited to a specific configuration. For example, a multi-gate structure having two or more gate electrodes may be used. When the multi-gate structure is employed, the channel regions are connected in series, so that a plurality of transistors are connected in series. With the multi-gate structure, the off-state current can be reduced and the reliability can be improved by improving the withstand voltage of the transistor. Or, when operating in the saturation region, the drain-source current does not change much even when the drain-source voltage changes, and the slope of the voltage / current characteristic is flat due to the multi-gate structure. it can. By using the characteristic that the slope of the voltage / current characteristic is flat, an ideal current source circuit and an active load having a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. Alternatively, a structure in which gate electrodes are arranged above and below the channel may be employed. With the structure in which the gate electrodes are arranged above and below the channel, the channel region increases, so that the current value can be increased or the S value can be reduced because a depletion layer can be easily formed. When gate electrodes are provided above and below a channel, a structure in which a plurality of transistors are connected in parallel is obtained.

Alternatively, a structure in which a gate electrode is disposed over the channel region may be employed, or a structure in which the gate electrode is disposed under the channel region may be employed. Alternatively, a normal stagger structure or an inverted stagger structure may be used, the channel region may be divided into a plurality of regions, the channel regions may be connected in parallel, or the channel regions may be connected in series. Good. In addition, a source electrode or a drain electrode may overlap with the channel region (or a part thereof). With the structure in which the source electrode or the drain electrode overlaps with the channel region (or part thereof), it is possible to prevent electric charges from being accumulated in part of the channel region and unstable operation. Further, an LDD region may be provided. By providing the LDD region, the off-state current can be reduced or the reliability can be improved by improving the withstand voltage of the transistor. Or
By providing the LDD region, when operating in the saturation region, even if the drain-source voltage changes, the drain-source current does not change so much, and the slope of the voltage / current characteristic becomes flat. it can.

Note that various types of transistors can be used for the transistor in this document (the specification, the claims, the drawings, and the like) and can be formed over various substrates. Therefore, all of the circuits necessary for realizing a predetermined function may be formed on the same substrate.
For example, all circuits necessary for realizing a predetermined function may be formed over a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, or may be formed over various substrates. . Since all the circuits necessary for realizing a predetermined function are formed on the same substrate, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connection points with circuit components. be able to. Alternatively, a part of the circuit necessary for realizing the predetermined function is formed on a certain substrate, and another part of the circuit necessary for realizing the predetermined function is formed on another substrate. It may be. That is, not all of the circuits necessary for realizing a predetermined function may be formed on the same substrate. For example, a part of a circuit necessary for realizing a predetermined function is formed using a transistor over a glass substrate, and another part of a circuit required for realizing a predetermined function is a single crystal substrate. An IC chip formed on a single crystal substrate and formed of a transistor is formed by COG (Chip On Gl
Ass) may be connected to the glass substrate, and the IC chip may be disposed on the glass substrate. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed board. As described above, since a part of the circuit is formed on the same substrate, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connection points with circuit components. In addition, since the power consumption of a circuit having a high driving voltage or a high driving frequency is large, such a circuit is not formed on the same substrate. Instead, for example, on a single crystal substrate. If the circuit of that portion is formed and an IC chip constituted by the circuit is used, an increase in power consumption can be prevented.

Note that in this document (specification, claims, drawings, etc.), one pixel means one element whose brightness can be controlled. Therefore, as an example, one pixel represents one color element, and brightness is expressed by one color element. Therefore, at that time, R (
In the case of a color display device comprising red, G (green), and B (blue) color elements, the minimum unit of an image is
Assume that the pixel is composed of three pixels, an R pixel, a G pixel, and a B pixel. The color element is
It is not limited to three colors, but three or more colors may be used, or colors other than RGB may be used. For example, RGBW (W is white) may be added by adding white. Further, one or more colors such as yellow, cyan, magenta, emerald green, vermilion, and the like may be added to RGB. Also,
For example, a color similar to at least one of RGB may be added to RGB. For example, R, G, B1, and B2 may be used. B1 and B2 are both blue, but have slightly different frequencies. Similarly, R1, R2, G, and B may be used. By using such color elements, it is possible to perform display closer to the real thing. Alternatively, power consumption can be reduced by using such color elements. As another example, when brightness is controlled using a plurality of areas for one color element, one area may be used as one pixel. Therefore, as an example, when area gradation is performed or when sub-pixels (sub-pixels) are provided, there are a plurality of brightness control areas for one color element, and the gradation is expressed as a whole. However, one pixel for controlling the brightness may be one pixel. Therefore,
In that case, one color element is composed of a plurality of pixels. Alternatively, even if there are a plurality of areas for controlling the brightness in one color element, they are combined into one color element.
It may be a pixel. Therefore, in that case, one color element is composed of one pixel. When brightness is controlled using a plurality of areas for one color element, the size of the area contributing to display may be different depending on the pixel. In addition, in a plurality of brightness control areas for one color element, a signal supplied to each may be slightly different to widen the viewing angle. That is, for one color element, the potentials of the pixel electrodes in each of a plurality of regions may be different from each other. As a result, the voltage applied to the liquid crystal molecules is different for each pixel electrode. Therefore, the viewing angle can be widened.

In addition, when it is explicitly described as one pixel (for three colors), it is assumed that three pixels of R, G, and B are considered as one pixel. When it is explicitly described as one pixel (for one color), it is assumed that when there are a plurality of areas for one color element, they are considered as one pixel.

Note that in this document (the specification, the claims, the drawings, or the like), the pixels may be arranged (arranged) in a matrix. Here, the pixel being arranged (arranged) in the matrix includes a case where the pixels are arranged in a straight line or a jagged line in the vertical direction or the horizontal direction. Therefore, for example, when full color display is performed with three color elements (for example, RGB), the case where stripes are arranged and the case where dots of three color elements are arranged in delta are included. Furthermore, the case where a Bayer is arranged is included. Note that the color elements are not limited to three colors, and may be more than that, for example, RGBW (W is white) or RGB in which one or more colors of yellow, cyan, magenta, etc. are added. Further, the size of the display area may be different for each dot of the color element. This
Low power consumption or long life of the display element can be achieved.

Note that an active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used in this document (specification, claims, drawings, or the like).

In the active matrix system, not only transistors but also various active elements (active elements and nonlinear elements) can be used as active elements (active elements and nonlinear elements). For example, MIM (Metal Insulator Metal) or TFD (
It is also possible to use (Thin Film Diode) or the like. Since these elements have few manufacturing steps, manufacturing cost can be reduced or yield can be improved. Furthermore, since the size of the element is small, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

Note that as a method other than the active matrix method, a passive matrix type that does not use active elements (active elements, nonlinear elements) can be used. Since no active element (active element or nonlinear element) is used, the number of manufacturing steps is small, and manufacturing cost can be reduced or yield can be improved. In addition, since an active element (an active element or a non-linear element) is not used, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

Note that a transistor is an element having at least three terminals including a gate, a drain, and a source. The transistor has a channel region between the drain region and the source region, and the drain region, the channel region, and the source region. A current can be passed through. Here, since the source and the drain vary depending on the structure and operating conditions of the transistor, it is difficult to limit which is the source or the drain. Therefore, in this document (the specification, the claims, the drawings, and the like), a region functioning as a source and a drain may not be referred to as a source or a drain. In that case, as an example, each of the first
Sometimes referred to as a terminal or a second terminal. Alternatively, they may be referred to as a first electrode and a second electrode, respectively. Alternatively, they may be referred to as a source region and a drain region.

Note that the transistor may be an element having at least three terminals including a base, an emitter, and a collector. Similarly in this case, the emitter and the collector may be referred to as a first terminal and a second terminal.

Note that a gate refers to the whole or part of a gate electrode and a gate wiring (also referred to as a gate line, a gate signal line, a scan line, a scan signal line, or the like). A gate electrode refers to a portion of a conductive film that overlaps with a semiconductor forming a channel region with a gate insulating film interposed therebetween. Note that a part of the gate electrode is an LDD (Lightly Dow).
a ped drain region, a source region or a drain region may overlap with a gate insulating film. A gate wiring is a wiring for connecting the gate electrodes of each transistor, a wiring for connecting the gate electrodes of each pixel, or a wiring for connecting the gate electrode to another wiring. Say.

However, the portion that functions as the gate electrode and also functions as the gate wiring (region,
There are also conductive films, wirings, and the like. Such a portion (region, conductive film, wiring, or the like) may be called a gate electrode or a gate wiring. That is, there is a region where the gate electrode and the gate wiring cannot be clearly distinguished. For example, when a part of the gate wiring extended and the channel region overlap, the portion (region, conductive film, wiring, etc.) functions as the gate wiring, but also as the gate electrode It is functioning. Therefore, such a portion (region, conductive film, wiring, or the like) may be called a gate electrode or a gate wiring.

Note that a portion (a region, a conductive film, a wiring, or the like) formed using the same material as the gate electrode and connected to form the same island (island) as the gate electrode may be called a gate electrode. Similarly, a portion (a region, a conductive film, a wiring, or the like) formed using the same material as the gate wiring and connected by forming the same island (island) as the gate wiring may be referred to as a gate wiring. In a strict sense, such a portion (region, conductive film, wiring, or the like) may not overlap with the channel region or may not have a function of being connected to another gate electrode. However, there is a portion (a region, a conductive film, a wiring, or the like) that is formed using the same material as the gate electrode or the gate wiring and forms the same island (island) as the gate electrode or the gate wiring. Therefore, such a portion (region, conductive film, wiring, or the like) may also be referred to as a gate electrode or a gate wiring.

Note that, for example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected to each other with a conductive film formed using the same material as the gate electrode. Such a portion (region, conductive film, wiring, or the like) is a portion (region, conductive film, wiring, or the like) for connecting the gate electrode to the gate electrode, and may be called a gate wiring. These transistors can be regarded as a single transistor, and may be referred to as a gate electrode. That is, a portion (region, conductive film, wiring, or the like) that is formed using the same material as the gate electrode or gate wiring and is connected to form the same island (island) as the gate electrode or gate wiring is connected to the gate electrode or gate wiring. You can call it. Further, for example, a conductive film in a portion where the gate electrode and the gate wiring are connected and formed of a material different from the gate electrode or the gate wiring may be referred to as a gate electrode. You may call it.

Note that a gate terminal means a part of a part of a gate electrode (a region, a conductive film, a wiring, or the like) or a part electrically connected to the gate electrode (a region, a conductive film, a wiring, or the like). .

Note that in the case of calling a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, or the like, the gate of the transistor may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scanning line, and the scanning signal line are formed at the same time as the wiring formed in the same layer as the gate of the transistor, the wiring formed of the same material as the gate of the transistor, or the gate of the transistor. It may mean a deposited wiring. Examples include a storage capacitor wiring, a power supply line, a reference potential supply wiring, and the like.

Note that a source refers to a source region, a source electrode, and a source wiring (a source line, a source signal line,
Data line, data signal line, etc.) or a part of them. The source region refers to a semiconductor region containing a large amount of P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic). Therefore, a region containing a little P-type impurity or N-type impurity, that is, a so-called LDD (Lightly Doped Drain) region is not included in the source region. The source electrode is formed of a material different from that of the source region,
This refers to a portion of the conductive layer that is electrically connected to the source region. However, the source electrode may be referred to as a source electrode including the source region. The source wiring is a wiring for connecting the source electrodes of the transistors, a wiring for connecting the source electrodes of each pixel, or a wiring for connecting the source electrode to another wiring. Say.

However, the part that functions as a source electrode and also functions as a source wiring (
Regions, conductive films, wirings, etc.). Such a part (region, conductive film, wiring, etc.)
It may be called a source electrode or a source wiring. That is, there is a region where the source electrode and the source wiring cannot be clearly distinguished. For example, in the case where a part of a source wiring that is extended and the source region overlap with each other, the portion (region, conductive film, wiring, etc.) functions as a source wiring, but as a source electrode Will also work. Thus, such a portion (region, conductive film, wiring, or the like) may be called a source electrode or a source wiring.

Note that a portion (region, conductive film, wiring, or the like) that is formed using the same material as the source electrode and forms the same island (island) as the source electrode, or a portion (region) that connects the source electrode and the source electrode , Conductive film, wiring, etc.) may also be referred to as source electrodes. Further, a portion overlapping with the source region may be called a source electrode. Similarly, a region formed of the same material as the source wiring and connected by forming the same island as the source wiring may be called a source wiring. Such a portion (region, conductive film, wiring, or the like) may not have a function of connecting to another source electrode in a strict sense. However, there is a portion (a region, a conductive film, a wiring, or the like) formed of the same material as the source electrode or the source wiring and connected to the source electrode or the source wiring. Therefore, such a part (region, conductive film,
Wiring or the like) may also be called a source electrode or a source wiring.

Note that, for example, a conductive film in a portion where the source electrode and the source wiring are connected and formed using a material different from that of the source electrode or the source wiring may be referred to as a source electrode. You may call it.

Note that a source terminal refers to a part of a source region, a source electrode, or a portion (region, conductive film, wiring, or the like) electrically connected to the source electrode.

Note that in the case of calling a source wiring, a source line, a source signal line, a data line, a data signal line, or the like, the source (drain) of the transistor may not be connected to the wiring. in this case,
The source wiring, the source line, the source signal line, the data line, and the data signal line are a wiring formed in the same layer as the source (drain) of the transistor, a wiring formed of the same material as the source (drain) of the transistor, or the transistor It may mean a wiring formed simultaneously with the source (drain). Examples include a storage capacitor wiring, a power supply line, a reference potential supply wiring, and the like.

  The drain is the same as the source.

Note that a semiconductor device refers to a device having a circuit including a semiconductor element (a transistor, a diode, a thyristor, or the like). Furthermore, a device that can function by utilizing semiconductor characteristics may be called a semiconductor device. Alternatively, a device including a semiconductor material is referred to as a semiconductor device.

Note that a display element is an optical modulation element, a liquid crystal element, a light emitting element, an EL element (an organic EL element,
An inorganic EL element or an EL element including an organic substance and an inorganic substance), an electron emission element, an electrophoretic element, a discharge element, a light reflection element, a light diffraction element, a digital micromirror device (DMD), and the like. However, it is not limited to this.

Note that a display device refers to a device having a display element. Note that the display device may include a plurality of pixels including a display element. Note that the display device may include a peripheral driver circuit that drives a plurality of pixels. Note that the peripheral driver circuit that drives the plurality of pixels may be formed over the same substrate as the plurality of pixels. The display device is a peripheral drive circuit disposed on the substrate by wire bonding or bumps, so-called chip-on-glass (COG).
IC chips connected by TAB or IC chips connected by TAB or the like may be included. Note that the display device may include a flexible printed circuit (FPC) to which an IC chip, a resistor element, a capacitor element, an inductor, a transistor, and the like are attached. In addition,
The display device may be connected via a flexible printed circuit (FPC) or the like, and may include a printed wiring board (PWB) to which an IC chip, a resistor element, a capacitor element, an inductor, a transistor, and the like are attached. Note that the display device may include an optical sheet such as a polarizing plate or a retardation plate. The display device includes a lighting device, a housing, a voice input / output device,
An optical sensor or the like may be included. Here, an illumination device such as a backlight unit is
A light guide plate, prism sheet, diffusion sheet, reflection sheet, light source (LED, cold cathode tube, etc.), cooling device (water cooling type, air cooling type) and the like may be included.

Note that the lighting device refers to a device including a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflective sheet, a light source (such as an LED, a cold cathode tube, a hot cathode tube), a cooling device, and the like.

Note that a light-emitting device refers to a device having a light-emitting element or the like. In the case where the display element includes a light-emitting element, the light-emitting device is one example of the display device.

In addition, a reflection apparatus means the apparatus which has a light reflection element, a light diffraction element, a light reflection electrode, etc.

Note that a liquid crystal display device refers to a display device having a liquid crystal element. Liquid crystal display devices include
There are direct view type, projection type, transmission type, reflection type, and transflective type.

Note that a driving device refers to a device having a semiconductor element, an electric circuit, and an electronic circuit. For example, a transistor that controls input of a signal from a source signal line into a pixel (sometimes referred to as a selection transistor or a switching transistor), a transistor that supplies voltage or current to a pixel electrode, or a voltage or current to a light-emitting element A transistor that supplies the voltage is an example of a driving device. Further, a circuit for supplying a signal to the gate signal line (sometimes referred to as a gate driver or a gate line driver circuit) and a circuit for supplying a signal to the source signal line (sometimes referred to as a source driver or source line driver circuit). ) Is an example of a driving device.

Note that a display device, a semiconductor device, a lighting device, a cooling device, a light-emitting device, a reflecting device, a driving device, and the like may overlap with each other. For example, the display device may include a semiconductor device and a light-emitting device. Alternatively, the semiconductor device may include a display device and a driving device.

In addition, in this document (specifications, claims or drawings, etc.), if it is explicitly stated that B is formed on A or B is formed on A, It is not limited that B is formed in direct contact with A. If you are not in direct contact, that is,
A case where another object is interposed between A and B is also included. Here, A and B are objects (
For example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, or the like).

Therefore, for example, when it is explicitly described that the layer B is formed on the layer A (or on the layer A), the layer B is formed in direct contact with the layer A. And the case where another layer (for example, layer C or layer D) is formed in direct contact with the layer A, and the layer B is formed in direct contact therewith. Note that another layer (for example, the layer C or the layer D) may be a single layer or a multilayer.

Furthermore, the same applies to the case where B is explicitly described as being formed above A, and is not limited to the direct contact of B on A. This includes the case where another object is interposed in. Therefore, for example, when the layer B is formed above the layer A, the case where the layer B is formed in direct contact with the layer A and the case where another layer is formed in direct contact with the layer A. (For example, the layer C or the layer D) is formed, and the layer B is formed in direct contact therewith. Note that another layer (for example, the layer C or the layer D) may be a single layer or a multilayer.

In addition, when it is explicitly described that B is formed in direct contact with A, it includes a case in which B is formed in direct contact with A. It shall not be included when an object is present.

  The same applies to the case where B is below A or B is below A.

Note that in this document (specifications, claims, drawings, etc.), what is explicitly described as singular is preferably singular. However, the present invention is not limited to this, and a plurality of them is also possible. Similarly, a plurality that is explicitly described as a plurality is preferably a plurality. However, the present invention is not limited to this, and the number can be singular.

Since the display device of the present invention includes a plurality of memory circuits in the driver circuit, data of video signals corresponding to a plurality of line periods can be held in parallel. Therefore, even if there are a plurality of line periods having the same data and a line period corresponding to another data exists between the plurality of line periods, the matching data, the different data, Can be held in separate memory circuits. Therefore, it is not necessary to rewrite data in the memory circuit in which the matching data is held until all of the plurality of line periods are completed.
That is, the input of the video signal to the signal line driver circuit, the sampling of the video signal in the signal line driver circuit, and the writing of the data of the sampled video signal to the storage circuit are performed once through the plurality of line periods. I can finish it.

Therefore, even when a plurality of line periods in which data coincides exist discontinuously, the power consumption of the signal line driver circuit can be efficiently suppressed. Further, power consumption required to input a video signal to the signal line driver circuit can be suppressed, and power consumption of the entire display device can be suppressed.

In addition, since the display device of the present invention has a plurality of memory circuits in the drive circuit, even when a plurality of groups each composed of a plurality of line periods having the same data are mixed, data corresponding to each group is stored in a separate memory circuit. Can be held. Therefore, in the memory circuit in which data is held, until all the line periods in the group corresponding to the data are completed,
There is no need to rewrite the data. That is, the input of the video signal to the signal line driver circuit, the sampling of the video signal in the signal line driver circuit, and the writing of the data of the sampled video signal to the storage circuit are performed for all the line periods in one group. 1 through
You can do it in degrees.

Therefore, even when there are a plurality of groups composed of a plurality of line periods in which data matches, the power consumption of the signal line driver circuit can be efficiently suppressed. Further, power consumption required to input a video signal to the signal line driver circuit can be suppressed, and power consumption of the entire display device can be suppressed.

Further, in the display device of the present invention, by storing video signal data corresponding to a plurality of line periods or a plurality of frame periods in the memory, the data comparison unit stores the video signal data corresponding to one line period. It can be compared with data of video signals corresponding to a plurality of other line periods. Therefore, not only data corresponding to adjacent line periods but also data corresponding to more line periods can be compared, so that power consumption of the signal line driver circuit can be efficiently suppressed.

1 is a block diagram illustrating a configuration of a display device of the present invention. FIG. 13 shows operation of a signal line driver circuit in a display device of the present invention. FIG. 13 shows operation of a signal line driver circuit in a display device of the present invention. FIG. 13 shows operation of a signal line driver circuit in a display device of the present invention. 4 is a timing chart illustrating a method for driving a display device of the present invention. 1 is a block diagram illustrating a configuration of a display device of the present invention. The block diagram which shows the structure of a data comparison part. The block diagram which shows the structure of a data comparison part. 1 is a block diagram illustrating a configuration of a display device of the present invention. The block diagram which shows the structure of a data comparison part. 1 is a block diagram illustrating a configuration of a display device of the present invention. 1 is a block diagram illustrating a configuration of a display device of the present invention. 6 is a timing chart illustrating timings when video signals are input to a pixel portion. FIG. 6 is a circuit diagram of a signal line driver circuit in a display device of the present invention. FIG. 6 is a circuit diagram of a signal line driver circuit in a display device of the present invention. FIG. 6 is a circuit diagram illustrating a configuration of a pixel portion of a light-emitting device. FIG. 6 is a circuit diagram illustrating a configuration of a pixel portion of a liquid crystal display device. 4A and 4B are a top view and a cross-sectional view of a display device of the present invention. FIG. 16 is a diagram of an electronic device using the display device of the invention. The circuit diagram of a memory element. The block diagram which shows the structure of a data comparison part. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a pixel layout of a semiconductor device according to the invention. 4A and 4B illustrate an example of a pixel layout of a semiconductor device according to the invention. 4A and 4B illustrate an example of a pixel layout of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a peripheral component member of a semiconductor device according to the invention. 4A and 4B illustrate an example of a peripheral component member of a semiconductor device according to the invention. FIG. 6 illustrates an example of a panel circuit configuration of a semiconductor device according to the present invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 8A and 8B illustrate an example of a method for driving a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. 4A and 4B illustrate an example of a peripheral component member of a semiconductor device according to the invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 8A and 8B illustrate an example of a top view of a semiconductor device according to the present invention. 8A and 8B illustrate an example of a top view of a semiconductor device according to the present invention. 8A and 8B illustrate an example of a top view of a semiconductor device according to the present invention. 4A and 4B illustrate an example of a pixel layout and a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a pixel layout and a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a pixel layout and a cross-sectional view of a semiconductor device according to the invention. FIG. 6 illustrates an example of a timing chart of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a timing chart of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. 8A and 8B illustrate a process for manufacturing a semiconductor device according to the present invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a cross-sectional view of a semiconductor device according to the invention. 4A and 4B illustrate an example of a display element of a semiconductor device according to the invention. 4A and 4B illustrate an example of a display element of a semiconductor device according to the invention. 4A and 4B illustrate an example of a structure of a semiconductor device according to the invention. 4A and 4B illustrate an example of a structure of a semiconductor device according to the invention. 4A and 4B illustrate an example of a structure of a semiconductor device according to the invention. 4A and 4B illustrate an example of a structure of a semiconductor device according to the invention. 4A and 4B illustrate an example of a structure of a semiconductor device according to the invention. FIG. 6 illustrates an example of a circuit configuration of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a timing chart of a semiconductor device according to the present invention. FIG. 6 illustrates an example of a timing chart of a semiconductor device according to the present invention. 8A and 8B illustrate an example of a method for driving a semiconductor device according to the present invention. 4A and 4B illustrate an example of a display element of a semiconductor device according to the invention. FIG. 6 illustrates an example of a semiconductor device manufacturing apparatus according to the present invention. FIG. 6 illustrates an example of a semiconductor device manufacturing apparatus according to the present invention. 6A and 6B illustrate a structure of a semiconductor device according to the invention. 6A and 6B illustrate a structure of a semiconductor device according to the invention. 6A and 6B illustrate a structure of a semiconductor device according to the invention. 6A and 6B illustrate a structure of a semiconductor device according to the invention. 6A and 6B illustrate a structure of a semiconductor device according to the invention. 6A and 6B illustrate a structure of a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention. 4A and 4B each illustrate an electronic device including a semiconductor device according to the invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode.

(Embodiment 1)
FIG. 1 is a block diagram of a display device of the present invention. A display device of the present invention includes a pixel portion 100 having a plurality of pixels, and a scanning line driving circuit 101 that can select the plurality of pixels for each line.
And a signal line driver circuit 102 that controls input of a video signal to the pixels in the selected line. The signal line driver circuit 102 includes a shift register 103 and a sampling circuit 104.
And at least a plurality of memory circuits. Each storage circuit includes a plurality of storage elements that can hold data input to pixels for one line.

FIG. 1 illustrates an example in which a first latch 105, a second latch 106, a third latch 107, and a fourth latch 108 are used as a plurality of memory circuits. Note that the number of latches used in the display device of the present invention is not limited to four, and the number of latches may be two or three.
There may be five or more.

Next, the operation of the signal line driver circuit 102 will be described. A clock signal S-CLK and a start pulse signal S-SP are input to the shift register 103. Shift register 103
Generates a timing signal for sequentially shifting the pulses in accordance with the clock signal S-CLK and the start pulse signal S-SP, and inputs the timing signal to the sampling circuit 104. The sampling circuit 104 samples the video signal for one line period input to the signal line driver circuit 102 in accordance with the input timing signal. When the video signal corresponding to each pixel is sampled, the sampled video signal is in any case one of the first latch 105, the second latch 106, the third latch 107, or the fourth latch 108 in the lower stage. Or it is input to plural.

Note that although an example in which a sampled video signal is input to the lower storage circuit each time without waiting for one line period is described in this embodiment mode, the present invention is not limited to this structure.
After all the video signals for one line period have been sampled, the sampled video signals may be input to the lower storage circuit all at once.

The sampling of the video signal may be performed in order for each corresponding pixel, or the pixels in one line may be divided into several groups and performed in parallel for each pixel corresponding to each group.

First latch 105, second latch 106, third latch 107, and fourth latch 10
8 includes write latch signals WS ₁ to WS that control writing of data included in the video signal.
WS ₄ and read latch signals RS _{1 to} R for controlling reading of held data
And S ₄ are input. More specifically, the first latch 105 receives the write latch signal WS ₁ and the read latch signal RS ₁ . Second latch 1
A write latch signal WS ₂ and a read latch signal RS ₂ are input to 06.
The third latch 107 receives the write latch signal WS ₃ and the read latch signal RS ₃ . The fourth latch 108 receives the write latch signal WS ₄ and the read latch signal RS ₄ .

According to the write latch signals WS _{1 to} WS ₄ , the first latch 105 and the second latch 1
06, the video signal data for one line period inputted from the sampling circuit 104 is written and held in the third latch 107 or the fourth latch 108. Further, in accordance with the read latch signals RS _{1 to} RS ₄ , data held in the first latch 105, the second latch 106, the third latch 107, or the fourth latch 108 is output as a video signal.

Note that although the pixel portion 100 is directly connected to the subsequent stage of the memory circuit in FIG. 1, the present invention is not limited to this configuration. In front of the pixel portion 100, a first latch 105, a second latch 106,
A circuit for performing signal processing on the video signal output from the third latch 107 or the fourth latch 108 can be provided. Examples of circuits that perform signal processing include, for example, a buffer that can shape a waveform, a level shifter that can amplify amplitude, and a digital-analog conversion circuit that can convert an analog signal.

In parallel with the video signal being input to the pixel portion 100 from any one of the first latch 105, the second latch 106, the third latch 107, or the fourth latch 108,
The sampling circuit 104 can sample again the video signal corresponding to the next line period. However, in the present invention, the same data as the data of the video signal corresponding to the next line period is already held in any of the first latch 105, the second latch 106, the third latch 107, or the fourth latch 108. If so, sampling of the video signal in the sampling circuit 104 can be stopped.

When stopping the sampling, the input of the clock signal S-CLK and the start pulse signal S-SP to the shift register 103 is stopped, and the generation of the timing signal pulse in the shift register 103 is stopped. In order to stop the generation of the timing signal pulse, only the input of the pulse of the clock signal S-CLK to the shift register 103 may be stopped, or conversely, the start pulse signal S-SP to the shift register 103 may be stopped. Only the input of the pulse may be stopped. When the output of the pulse of the timing signal from the shift register 103 is stopped, the sampling circuit 104 stops the sampling of the video signal.
Then, in accordance with the read latch signals RS _{1 to} RS ₄ , the same data as the data of the video signal corresponding to the next line period is transferred to the first latch 105, the second latch 106, and the third latch 1.
A video signal is input to the pixel unit 100 from either 07 or the fourth latch 108.

Next, in the pixel on the j-th line, the j + a-th line, and the j + b-th line of the pixel unit 100,
A specific operation of the signal line driver circuit 102 will be described using an example in which the data of the input video signal is the same.

First, as shown in FIG. 2A, it is assumed that the pixel on the jth line is selected. Then, it is assumed that, for example, data held in the first latch 105 is input as a video signal to the pixel on the selected j-th line. Note that writing of video signal data to the first latch 105 is performed by the shift register 103 generating a timing signal in the signal line driver circuit 102, the sampling circuit sampling the video signal in accordance with the pulse of the timing signal, 1 is performed by a series of operations of inputting to one latch 105. That is, in order to input a video signal to the pixel on the j-th line, the signal line driver circuit 102 uses FIG.
), The shift register 103, the sampling circuit 104, and the first latch 105
Will be driven.

Next, it is assumed that the pixel on the j + a line is selected as shown in FIG. A video signal having the same data as the video signal input to the j-th line is input to the selected pixel on the j + a-th line. Therefore, data held in the first latch 105 may be input as a video signal. Note that the writing of the video signal data to the first latch 105 has already been completed before the pixel on the j-th line is selected. Therefore, if the data is held in the first latch 105 even after the selection of the pixel on the j-th line is completed, j +
There is no need to rewrite data to the first latch 105 before the pixel on the a-th line is selected. Therefore, in order to input a video signal to the pixel on the j + a line, the signal line driver circuit 102 only needs to drive the first latch 105 as shown in FIG.

Next, as shown in FIG. 4A, it is assumed that after the pixel on the j + a line is selected, the pixel on the line corresponding to another data is selected before the pixel on the j + b line is selected. To do.
For example, it is assumed that data held in the third latch 107 is input to the pixels of the selected line as a video signal. Note that the video signal data is written to the third latch 107 in the signal line driver circuit 102 by the shift register 103 generating a timing signal and the sampling circuit 104 sampling the video signal in accordance with the pulse of the timing signal. This is performed by a series of operations of inputting to the third latch 107. That is, in order to input a video signal to the pixels of the line, the signal line driving circuit 10
2, the shift register 103, the sampling circuit 104, and the third latch 107 are driven as shown in FIG.

Note that in the present invention, data that has already been written can be held in the first latch 105 even while a pixel of a line corresponding to different data is selected. Therefore, even after the selection of a line corresponding to another data is completed, when the pixel on the j + b line is selected, the data held in the first latch 105 is stored in the pixel on the j + b line. It can be input as a video signal. Therefore, in order to input a video signal to the pixel on the j + b line, the signal line driver circuit 102 only needs to drive the first latch 105 as in the case of FIG.

Next, taking the display device shown in FIG. 1 as an example, the clock signal S-CLK and the start pulse signal S-SP inputted to the shift register 103, the first latch 105, the second latch 106, the third wherein the write latch signal _WS 1 to WS ₄ and read latch signal _RS 1 to RS ₄ which are input to the latch 107 and fourth latch 108, and data (DATA1 of the video signal output from the sampling circuit 104 ), An example of a timing chart of video signal data (denoted as DATA2) input to the pixel portion 100 is shown in FIG. However, FIG. 5 illustrates a case where the video signal corresponding to each pixel is sampled in the sampling circuit 104 without waiting for one line period, and the sampled video signal is input to the lower storage circuit each time.

As shown in FIG. 5, in the first appearing line period, the sampling circuit 104 outputs a video signal having data represented as “A”. The first latch 105 includes
In accordance with the pulse of the write latch signal WS _1, the video signal having the data “A” output from the sampling circuit 104 is written. At this time, the other latch circuits may be in a state in which writing is possible by the write latch signal. In this way, the data “A” can be written to a plurality of latch circuits in parallel.

In the next appearing line period, a video signal having data represented as “B” is output from the sampling circuit 104. The second latch 106 has a write latch signal WS.
_In accordance with the _second pulse, the video signal having the data “B” output from the sampling circuit 104 is written. On the other hand, a video signal having data “A” is input from the first latch 105 to the pixel portion 100 in accordance with the pulse of the read latch signal RS ₁ .

In the next appearing line period, the sampling circuit 104 outputs a video signal having data represented as “C”. The third latch 107 has a write latch signal WS.
_In accordance with the _third pulse, the video signal having data “C” output from the sampling circuit 104 is written. On the other hand, in the pixel unit 100, in accordance with the pulse of the read latch signal RS _2, the video signal having the data "B" from the second latch 106 are input.

In the next appearing line period, the sampling circuit 104 outputs a video signal having data represented as “D”. The fourth latch 108 has a write latch signal WS.
_The video signal having the data “D” output from the sampling circuit 104 is written according to the _4th pulse. On the other hand, a video signal having data “C” is input from the third latch 107 to the pixel portion 100 in accordance with the pulse of the read latch signal RS ₃ .

In the next appearing line period, the input to the shift register 103 of either or both of the pulse of the clock signal S-CLK and the pulse of the start pulse signal S-SP is stopped. Accordingly, the generation of the timing signal in the shift register 103 is stopped, so that the update of the output of the video signal from the sampling circuit 104 is stopped. The pixel unit 10
In “0”, “D” is output from the fourth latch 108 in accordance with the pulse of the read latch signal RS _4.
A video signal having the following data is input.

In the next line period, the clock signal S-CLK continues from the previous line period.
One or both of the pulse of the start pulse signal S-SP,
Input to the shift register 103 stops. Accordingly, the generation of the timing signal in the shift register 103 is stopped, so that the update of the output of the video signal from the sampling circuit 104 is stopped. And in the pixel unit 100, in accordance with the pulse of the read latch signal RS _1,
A video signal having data “A” is input from the first latch 105.

In the next line period, the clock signal S-CLK continues from the previous line period.
One or both of the pulse of the start pulse signal S-SP,
Input to the shift register 103 stops. Accordingly, the generation of the timing signal in the shift register 103 is stopped, so that the update of the output of the video signal from the sampling circuit 104 is stopped. And in the pixel unit 100, in accordance with the pulse of the read latch signal RS _2,
A video signal having data “B” is input from the second latch 106.

In the next appearing line period, the input of the pulse of the clock signal S-CLK and the pulse of the start pulse signal S-SP to the shift register 103 is resumed. Accordingly, the generation of the timing signal in the shift register 103 is also resumed, so that a video signal having data denoted as “E” is output from the sampling circuit 104. The third latch 107 includes
In accordance with the pulse of the write latch signal WS _3, the video signal having the data “E” output from the sampling circuit 104 is written. On the other hand, a video signal having data “A” is input from the first latch 105 to the pixel portion 100 in accordance with the pulse of the read latch signal RS ₁ .

In the next appearing line period, the input to the shift register 103 of either or both of the pulse of the clock signal S-CLK and the pulse of the start pulse signal S-SP is stopped. Accordingly, the generation of the timing signal in the shift register 103 is stopped, so that the update of the output of the video signal from the sampling circuit 104 is stopped. The pixel unit 10
To “0”, “E” is output from the third latch 107 according to the pulse of the read latch signal RS _3.
A video signal having the following data is input.

In FIG. 5, after the video signal data is written in the memory circuit, the written data is input to the pixel portion 100 as the video signal in the subsequent line periods. However, the present invention is not limited to this structure. In parallel with writing the video signal data in the memory circuit, the written data may be input to the pixel portion 100 as a video signal.

Further, FIG. 5 illustrates a case in which the video signal corresponding to each pixel is sampled in the sampling circuit 104 without waiting for one line period, and the sampled video signal is input to the lower storage circuit each time. The present invention is not limited to this configuration. After sampling all video signals for one line period in the sampling circuit 104, the sampled video signals may be input to the lower storage circuit all at once. However, in this case, the sampling circuit 104 is operated in a period for sampling the video signal within one line period and a period for outputting the sampled video signal. Only in the latter period, the sampled video signal is written into the memory circuit.

Since the display device of the present invention includes a plurality of memory circuits in the signal line driver circuit 102, video signal data corresponding to a plurality of line periods can be held in parallel. Therefore, for example, as shown in FIG. 5, a line period corresponding to another data write exists between the second, sixth, and eighth line periods corresponding to the data write “A”. Even so, the data “A” and the different data can be held in different memory circuits. Therefore, the memory circuit (in FIG. 5, the first latch 1) holding the matching “A” data.
05), it is not necessary to rewrite data until the second, sixth, and eighth line periods are all completed. That is, the input of the video signal to the signal line driver circuit 102, the sampling of the video signal in the signal line driver circuit 102, and the writing of the sampled video signal “A” data to the storage circuit are second, You can do it once through the 6th and 8th line periods.

Therefore, in the present invention, power consumption of the signal line driver circuit 102 can be efficiently suppressed even when a plurality of lines with matching data exist discontinuously. Further, power consumption required for inputting a video signal to the signal line driver circuit 102 can be suppressed, and power consumption of the entire display device can be suppressed.

Further, since the display device of the present invention has a plurality of memory circuits in the drive circuit, it corresponds to the data of “B”, the group composed of the second, sixth, and eighth line periods corresponding to the data of “A”. Even when there are a plurality of groups composed of a plurality of line periods having the same data, such as a group composed of the third, seventh, and tenth line periods, the data corresponding to each group is separated. Can be held in the memory circuit. Therefore, in the memory circuit in which each data is held, it is not necessary to rewrite the data until all the line periods in the group corresponding to the data are completed. That is, the signal line driving circuit 1
The input of the video signal to 02, the sampling of the video signal in the signal line driver circuit 102, and the writing of the data of the sampled video signal to the storage circuit are performed at once through all the line periods in one group. I can finish it.

Therefore, even when there are a plurality of groups composed of a plurality of line periods in which data matches, the power consumption of the signal line driver circuit can be efficiently suppressed. Further, power consumption required to input a video signal to the signal line driver circuit can be suppressed, and power consumption of the entire display device can be suppressed.

In FIG. 5, a group composed of a plurality of line periods corresponding to the data “A”,
Although a case has been described where two groups exist, such as a group composed of a plurality of line periods corresponding to the data “B”, the number of groups need not be two. The number of storage circuits is set as appropriate in accordance with the number of groups for which data writing in the storage circuit is to be omitted and the timing of data writing and reading in the storage circuit.

For example, as shown in FIG. 5, a case where the timing of writing and reading of video signal data in the storage circuit is shifted will be considered. In this case, line-sequential driving is possible in which data is written simultaneously to all pixels belonging to one line. Further, in this case, when a plurality of line periods whose data do not coincide with other line periods such as a line period corresponding to the data “C” and a line period corresponding to the data “D” appear, In addition to the storage circuit for writing the matched data, a storage circuit for writing the mismatched data is required. Therefore,
It is desirable to provide the signal line driver circuit with the number of memory circuits obtained by adding 1 to the number of groups.

Further, for example, unlike FIG. 5, the video signal data may not be written in the memory circuit, and the video signal may be directly input to the pixel unit 100 from the sampling circuit. In this case, it is possible to perform dot sequential driving in which signals are sequentially written for each pixel. At this time, the signal line driver circuit 102 is not necessarily provided with a memory circuit for writing data that does not match, and may be provided with a memory circuit for writing data that matches. Therefore, in this case, it is preferable that the signal line driver circuit 102 be provided with the same number of memory circuits as the number of the groups.

Note that, unlike FIG. 5, the signal line driver circuit 102 may be controlled to input the written data to the pixel portion 100 as a video signal in parallel with writing the video signal data to the memory circuit. Good. In this case, both writing and reading of data in the memory circuit can be performed within one line period. In this way, the signal line driver circuit 102
Even in a configuration capable of line-sequential driving, dot-sequential driving can be realized.

Note that when the number of memory circuits is large, the number of times of data writing to the memory circuit can be omitted, which leads to reduction in power consumption of the signal line driver circuit. On the other hand, by reducing the number of memory circuits, the ratio of the area of the signal line driver circuit to the substrate can be suppressed.

In this embodiment mode, a display device having one signal line driver circuit and one scan line driver circuit is described; however, the present invention is not limited to this structure. Two or more signal line driver circuits may be provided, or two or more scan line driver circuits may be provided.

In the case where a plurality of signal line driver circuits are provided, video signal sampling can be sequentially performed by the plurality of signal line driver circuits, so that the drive frequency of the signal line driver circuit can be reduced and power consumption can also be reduced. In the case where a plurality of scan line driver circuits are provided, a plurality of lines can be simultaneously selected and data can be written in parallel, so that one line period can be lengthened. Therefore,
Since the driving frequency of the signal line driver circuit can be reduced, power consumption can also be reduced.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 2)
FIG. 6 shows a block diagram of the display device of the present invention. In addition to the display device shown in FIG. 1, the display device shown in FIG. 6 includes a memory for storing a video signal, and a data comparison unit 110 that compares the video signals stored in the memory between corresponding line periods. Have In FIG. 6, a RAM (Random Access Memory) is used as a memory for storing a video signal.
ry) 111 and an example using the RAM 112 are shown. RAM 111 and RAM 112 have S
DRAM (Synchronous Dynamic Random Access M
memory), DRAM (Dynamic Random Access Memory)
) And SRAM (Static Random Access Memory).

In addition, the display device of the present invention may include a control circuit 113 and a data format circuit 114 as shown in FIG. The control circuit 113 has a horizontal synchronizing signal H for synchronizing in the horizontal direction.
A signal used for reconfiguring the screen in the pixel unit 100, such as a sync and a vertical synchronization signal Vsync for synchronizing in the vertical direction, and a clock signal CLK are input. The control circuit 113 uses the input signal to control the clock signal S-CLK and the start pulse signal S-SP for controlling the operation of the signal line driver circuit 102 and the operation of the scanning line driver circuit 101. A clock signal G-CLK and a start pulse signal G-SP can be generated.

The data format circuit 114 can generate a video signal that meets the specifications of the pixel unit 100, the scanning line driving circuit 101, and the signal line driving circuit 102 according to a signal from the control circuit 113 using the input image data. .

The video signal output from the data format circuit 114 is stored in the RAM 111 or RA.
Stored in M112. In this embodiment, each of the RAM 111 and the RAM 112 has 1
Although a case where a video signal corresponding to a frame period is stored will be described, the present invention is not limited to this configuration. Each of the RAM 111 and the RAM 112 may store a video signal corresponding to a period longer than one frame period, or may store a video signal corresponding to a plurality of line periods shorter than one frame period.

In this embodiment, an example is shown in which two RAMs are used as the memory. However, in the present invention, the number of memories is not limited to two. For example, the video signal may be stored in three or more memories, or the video signal may be stored in one memory. However, when there are a plurality of memories, the video signal writing to the memory and the video signal reading from the memory can be performed in parallel, so that the driving speed of the data comparison unit 110 can be further increased. Therefore, more data can be compared, and power consumption can be more efficiently suppressed.

Information indicating which line period corresponds to the video signal stored in the RAM 111 and the RAM 112 is added in the data format circuit 114. The data comparison unit 110 stores the data of the video signal corresponding to each line period in the RAM 111 or R
A plurality of line periods are read out from the AM 112 and compared to match the video signal data. Then, the data comparison unit 110 is configured so that the coincident data is written to any one of the storage circuits in accordance with the timing of the line period that appears first among the plurality of line periods. The write latch signals WS _{1 to} WS ₄ are generated so that the written data is held in the memory circuit until at least the last appearing line period is completed. Further, the data comparison unit 110 reads the read latch signals RS _{1 to} RS ₄ so that the data written in the storage circuit is input to the pixel unit 100 as a video signal in a plurality of line periods in which the video signal data match. Is generated.
The generated write latch signals WS _{1 to} WS ₄ and the read latch signals RS _{1 to} RS
₄ is input from the data comparison unit 110 to the memory circuit in the signal line driver circuit 102.

In addition, the data comparison unit 110 completes the last line period after the first line period appears in the plurality of line periods in which the video signal data matches, in other words, in the plurality of line periods in which the video signal data matches. Until the sampling of the video signal in the signal line driver circuit 102 is completed once, the start pulse signal S-SP and the clock signal S input to the data comparison unit 110 according to the appearance timing of the plurality of line periods. -CLK is subjected to signal processing so that pulse output is stopped in a period in which the plurality of lines are written, and is input to the shift register 103 in the signal line driver circuit 102. With the above structure, the sampling of the video signal in the sampling circuit 104 can be performed only once through a plurality of line periods.

Further, the data comparison unit 110 follows the timing at which the plurality of line periods appear so that the video signal can be input to the signal line driver circuit 102 only once through the plurality of line periods in which the video signal data matches. Control the output of the video signal.

FIG. 7 shows a specific configuration of the data comparison unit 110 as an example. In the block diagram shown in FIG. 7, the data comparison unit 110 includes a comparator 115, an address memory 116, and an arithmetic circuit 1.
17, PLL (Phase Locked Loop) circuit 118, signal control circuit 119
have.

The arithmetic circuit 117 reads a video signal from the RAM 111 or the RAM 112. For example, assume that a video signal in the j-th line period and a video signal in the line period of the j + a line are read out. The arithmetic circuit 117 controls the comparator 115 so as to compare the read data of these video signals. As a result of the comparison in the comparator 115, if the data of the video signal match, the arithmetic circuit 117 causes the address memory 116 to store information indicating in which line period the data matches.

The arithmetic circuit 117 needs to be driven at a higher speed as the number of line periods in which data must be compared is larger. For example, if data corresponding to one line period is compared with data corresponding to N line periods, the frequency of the clock signal for controlling the driving of the arithmetic circuit 117 is N of the frequency of the clock signal S-CLK. It is desirable to be double. Therefore, in the data comparison unit 110 shown in FIG. 7, the frequency of the input clock signal S-CLK is changed to PL.
The signal is converted to N times in the L circuit 118 and input to the arithmetic circuit 117.

Note that a clock signal for controlling driving of the arithmetic circuit 117 may be separately generated in the control circuit 113 and input to the arithmetic circuit 117. In this case, since the frequency of the clock signal for controlling the driving of the arithmetic circuit 117 can be controlled by the control circuit 113, the PLL circuit 118 need not be provided.

In addition, the arithmetic circuit 117 reads from the address memory 116 information indicating in which line period the data matches. Then, the arithmetic circuit 117 controls the signal control circuit 119 so as to perform signal processing on the start pulse signal S-SP and the clock signal S-CLK input to the data comparison unit 110 in accordance with the appearance timing of the line period. . The start pulse signal S-SP and the clock signal S-CLK that have been subjected to signal processing are input from the signal control circuit 119 to the signal line driver circuit 102.

In addition, the calculating circuit 117, in accordance with the appearance timing of the line period, the write latch signal _WS 1 to WS _4, so as to generate the read latch signal _RS 1 to RS _4,
The signal control circuit 119 is controlled. The generated write latch signals WS _{1 to} WS ₄ and read latch signals RS _{1 to} RS ₄ are transmitted from the signal control circuit 119 to the signal line drive circuit 102.
Is input.

In addition, the arithmetic circuit 117 performs signal control circuit 1 according to the timing at which the line period appears.
The video signal input from 19 to the signal line driver circuit 102 is controlled. For example, as shown in FIG. 7, in the j-th line period, the video signal in the j-th line period and the video signal in the line period of the j + p line are input to the arithmetic circuit 117, and data comparison is performed. The arithmetic circuit 117 controls the signal control circuit 119 so that the video signal in the j-th line period is output to the signal line driver circuit 102 regardless of the comparison result. Next, as shown in FIG. 21, when the video signal data in the j-th line period and the video signal data in the j + p-th line period match, the arithmetic circuit 117 performs the following operation in the j + p-th line period. The output of the video signal to the signal line driver circuit 102 is stopped. Conversely, when the video signal data in the j-th line period and the video signal data in the j + p-th line period do not match, the arithmetic circuit 117 sends the video signal in the j + p-th line period to the signal line driver circuit 102. The signal control circuit 119 is controlled so as to be output. In the j + p-th line period,
The video signal in the j + p-th line period and the video signal in the j + q-th line period (p <q) are input to the arithmetic circuit 117, and data comparison is performed.

Note that it is assumed that there are a plurality of groups having a plurality of line periods corresponding to the same data, and the number of groups is larger than the number of data that can be stored in the memory circuit. In this case, priority may be given to the group in which data is first written in the memory circuit, and the remaining group may perform normal operation, that is, rewrite of video signal data in the memory circuit in each line period. Alternatively, even if other data is written in the memory circuit first, if a line period belonging to another group appears later, data corresponding to the group may be written to give priority to the group. .

In addition, in order to prioritize a group having a large number of line periods corresponding to the same data, the data of the group may be written in the storage circuit. FIG. 8 shows a configuration of the data comparison unit 110 when a plurality of line period groups corresponding to the same data are mixed, and priorities are assigned to the groups according to the number of line periods.

In the block diagram shown in FIG. 8, the data comparison unit 110 includes a comparator 115, an address memory 116, an arithmetic circuit 117, and a PLL (Phase Locked Loop) circuit 11.
8. In addition to the signal control circuit 119, a counter 120 is further provided. In the data comparison unit 110 illustrated in FIG. 8, when the data matches as a result of the comparison in the comparator 115, information indicating that the data matches is sent to the counter 120. When the counter 120 counts the number of line periods in which data matches based on the information, the arithmetic circuit 117 refers to the number of line periods and assigns a priority to each group. Then, the write latch signals WS _{1 to} WS ₄ are used so that the data of the high priority group is preferentially held in the memory circuit.
Then, the signal control circuit 119 is controlled to generate the read latch signals RS _{1 to} RS ₄ .

In the display device of the present invention shown in FIG. 6, signal processing of the start pulse signal S-SP and the clock signal S-CLK, generation of write latch signals WS _{1 to} WS ₄ and read latch signals RS _{1 to} RS ₄ are generated. Are all performed in the data comparison unit 110, but the control circuit 1
13 may be performed. Next, in the display device shown in FIG. 6, the signal processing of the start pulse signal S-SP and the clock signal S-CLK, and the write latch signal WS ₁
The operation of the data comparison unit 110 when the control circuit 113 generates the WS ₄ and the read latch signals RS _{1 to} RS ₄ will be described with reference to FIG.

In the block diagram shown in FIG. 9, the data comparison unit 110 reads out the video signal data corresponding to each line period from the RAM 111 or RAM 112, compares the data, and extracts a plurality of line periods in which the video signal data matches. A signal including information indicating which line period has been extracted is input to the control circuit 113 as a timing control signal.
In addition, the data comparison unit 110 passes through a plurality of line periods in which the video signal data matches.
The video signal output is controlled in accordance with the appearance timing of the plurality of line periods so that the video signal can be input to the signal line driver circuit 102 only once.

In accordance with the input timing control signal, the control circuit 113 matches the timing of the first appearing line period among the plurality of line periods in which the data of the video signal match, and the matching data is one of the storage circuits. Write latch signals WS _{1 to} WS ₄ so that the written data is held in the memory circuit until the last line period of the plurality of line periods ends. Is generated. Further, the control circuit 113 performs read-out so that data written in the memory circuit is input to the pixel portion 100 as a video signal in a plurality of line periods in which the data of the video signal match in accordance with the input timing control signal. Latch signals RS _{1 to} RS ₄ are generated. The generated write latch signals WS _{1 to} WS ₄ and the read latch signals RS _{1 to} R
S ₄ is input from the control circuit 113 to the memory circuit in the signal line driver circuit 102.

The control circuit 113 also includes a signal used for reconfiguring the screen in the pixel unit 100, such as a horizontal synchronization signal Hsync for synchronizing in the horizontal direction and a vertical synchronization signal Vsync for synchronizing in the vertical direction, and a clock signal CLK. Are entered. The control circuit 113 uses the input signal to control a clock signal S-CLK for controlling the operation of the signal line driver circuit 102.
And the start pulse signal S-SP, the clock signal G-CLK and the start pulse signal G-SP for controlling the operation of the scanning line driving circuit 101, and the clock signal A-CLK for controlling the driving of the data comparator 110. Can be generated. The clock signal A-CLK is output from the control circuit 113 to the data comparison unit 110. The control circuit 113 then starts the start pulse signal S in accordance with the input timing control signal so that the video signal sampling in the signal line driver circuit 102 can be performed only once through a plurality of line periods in which the video signal data match. The signal processing is performed on the SP and the clock signal S-CLK and input to the shift register 103 in the signal line driver circuit 102. With the above structure, the sampling of the video signal in the sampling circuit 104 can be performed only once through a plurality of line periods.

Referring to FIG. 10, when a plurality of groups having a plurality of line periods corresponding to the same data are mixed, the data comparison unit 1 when prioritizing the groups according to the number of the line periods
10 configurations are shown.

In the block diagram shown in FIG. 8, the data comparison unit 110 includes a comparator 115, an address memory 116, an arithmetic circuit 117, and a PLL (Phase Locked Loop) circuit 11.
8. In addition to the signal control circuit 119, a counter 120 is further provided. In the data comparison unit 110 illustrated in FIG. 8, when the data matches as a result of the comparison in the comparator 115, information indicating that the data matches is sent to the counter 120. When the counter 120 counts the number of line periods in which data matches based on the information, the arithmetic circuit 117 refers to the number of line periods and assigns a priority to each group. Then, the write latch signals WS _{1 to} WS ₄ are used so that the data of the high priority group is preferentially held in the memory circuit.
Then, the signal control circuit 119 is controlled to generate the read latch signals RS _{1 to} RS ₄ .

Next, in the case where the control circuit 113 performs signal processing of the start pulse signal S-SP and the clock signal S-CLK, and generation of the write latch signals WS _{1 to} WS ₄ and read latch signals RS _{1 to} RS ₄ , FIG. The operation of the data comparison unit 110 shown in FIGS. 7 and 8 will be described with reference to FIG. 10 illustrates the operation of the data comparison unit 110 illustrated in FIG. 8 as an example, but the operation of the data comparison unit 110 illustrated in FIG. 7 can be similarly described.

In FIG. 10, the arithmetic circuit 117 reads from the address memory 116 information indicating in which line period the data matches. Based on the information, the arithmetic circuit 117 controls the signal control circuit 119 so as to generate a timing control signal including information indicating which line period has been extracted. The generated timing control signal is input from the signal control circuit 119 to the control circuit 113.

In the data comparison unit 110 shown in FIG. 10, the frequency of the input clock signal A-CLK is converted to N times in the PLL circuit 118 and input to the arithmetic circuit 117. Arithmetic circuit 11
Alternatively, the frequency of the clock signal A-CLK for controlling the drive of 7 may be separately converted by the control circuit 113 and then input to the arithmetic circuit 117. In this case, since the control circuit 113 controls the frequency of the clock signal for controlling the driving of the arithmetic circuit 117, the PLL
The circuit 118 is not necessarily provided.

In the display device of the present invention, data of the video signal corresponding to a plurality of line periods or a plurality of frame periods is stored in the RAM 111 and the RAM 112, whereby the data comparison unit 11 is stored.
At 0, video signal data corresponding to one line period can be compared with video signal data corresponding to a plurality of other line periods. Accordingly, not only data corresponding to adjacent line periods but also data corresponding to more line periods can be compared, so that power consumption of the signal line driver circuit 102 can be efficiently suppressed.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 3)
In this embodiment mode, a structure of a scan line driver circuit included in the display device of the present invention will be described. FIG. 11 is a block diagram showing the configuration of the display device of the present invention as an example. FIG.
This corresponds to a more detailed configuration of the scanning line driving circuit 101 in the display device shown in FIG. In FIG. 11, the scanning line driving circuit 101 includes a shift register 121 and a buffer 12.
2

The scan line driver circuit 101 includes a start pulse signal G-SP and a clock signal G-CLK.
Is entered. The shift register 103 generates a selection signal for sequentially shifting the pulses in accordance with the clock signal G-CLK and the start pulse signal G-SP. Buffer 122
The waveform of the generated selection signal is shaped or amplified and input to the pixel unit 100. The selection signal is input to the pixel for each line, and one line can be selected from a plurality of lines by a pulse included in the selection signal.

The waveform shaping includes controlling the pulse width by a logic circuit using logic elements such as AND, OR, NAND, and NOR. Amplification includes impedance matching with the wiring of the pixel portion by changing the amplitude of a signal using a level shifter, a differential amplifier circuit, or the like, and adjusting the size of a transistor.

  A video signal is input from the signal line driver circuit 102 to the pixels of the selected line.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 4)
In this embodiment mode, a structure of a display device of the present invention which can input an analog video signal to a pixel portion will be described. FIG. 12 is a block diagram showing an example of the configuration of the display device of the present invention.

A display device of the present invention shown in FIG. 12 includes a pixel portion 200 having a plurality of pixels, a scanning line driving circuit 201 that can select a plurality of pixels for each line, and a video to pixels in the selected line. And a signal line driver circuit 202 which controls input of signals. Signal line drive circuit 20
2 includes at least a shift register 203, a sampling circuit 204, a plurality of storage circuits, and a digital-analog (DA) conversion circuit 209. FIG. 12 illustrates an example in which a first latch 205, a second latch 206, a third latch 207, and a fourth latch 208 are used as a plurality of memory circuits. Note that the number of latches used in the display device of the present invention is not limited to four, and the number of latches may be two or three, or may be five or more.

Next, the operation of the signal line driver circuit 202 will be described. In the display device illustrated in FIG. 12, the clock signal S-CLK and the start pulse signal S-SP are input to the shift register 203 as in the case of FIG. The shift register 203 generates a timing signal for sequentially shifting the pulses in accordance with the clock signal S-CLK and the start pulse signal S-SP, and inputs the timing signal to the sampling circuit 204. The sampling circuit 204 samples the video signal for one line period input to the signal line driver circuit 202 in accordance with the input timing signal. When the video signals for one line period are all sampled, the sampled video signals are all one of the first latch 205, the second latch 206, the third latch 207, and the fourth latch 208. Output to one or more.

Note that, in this embodiment, the case where all the video signals for one line period are sampled and then the sampled video signals are input to the lower storage circuit will be described as an example. It is not limited to. If the video signal corresponding to each pixel is sampled without waiting for one line period, the sampled video signal may be inputted to the lower storage circuit each time.

The sampling of the video signal may be performed in order for each corresponding pixel, or the pixels in one line may be divided into several groups and performed in parallel for each pixel corresponding to each group.

In this embodiment mode, the number of memory elements included in each memory circuit is determined in accordance with the number of bits of an input digital video signal. For example, when display is performed using an 8-bit video signal, the first latch 205, the second latch 206, the third latch 207, and the fourth latch 2
08 has a flip-flop circuit corresponding to eight times the number of pixels included in one line.

First latch 205, second latch 206, third latch 207, and fourth latch 20
8 includes write latch signals WS ₁ to WS that control writing of data included in the video signal.
WS ₄ and read latch signals RS _{1 to} R for controlling reading of held data
And S ₄ are input. More specifically, the first latch 205 receives the write latch signal WS ₁ and the read latch signal RS ₁ . Second latch 2
A write latch signal WS ₂ and a read latch signal RS ₂ are input to 06.
A write latch signal WS ₃ and a read latch signal RS ₃ are input to the third latch 207. The fourth latch 208 receives a write latch signal WS ₄ and a read latch signal RS ₄ .

In accordance with the write latch signals WS _{1 to} WS ₄ , the first latch 205 and the second latch 2
The video signal data for one line period output from the sampling circuit 204 is written and held in 06, the third latch 207, or the fourth latch 208. Further, in accordance with the read latch signals RS _{1 to} RS ₄ , data held in the first latch 205, the second latch 206, the third latch 207, or the fourth latch 208 is converted into a DA signal as a video signal. Is input. The DA conversion circuit 209 converts the input digital video signal into an analog video signal and inputs the analog video signal to the pixel unit 200.

In FIG. 1, the pixel unit 200 is directly connected to the subsequent stage of the DA conversion circuit 209, but the present invention is not limited to this configuration. A circuit that performs signal processing on the analog video signal output from the DA converter circuit 209 can be provided in the previous stage of the pixel portion 200. Examples of circuits that perform signal processing include a buffer that can shape a waveform, a level shifter that can amplify the amplitude, and the like.

In parallel with the input of the video signal from the DA conversion circuit 209 to the pixel unit 200, the sampling circuit 204 can sample the video signal corresponding to the next line period again. However, in the present invention, the same data as the video signal data corresponding to the next line period is stored in the first latch 205, the second latch 206, the third latch 207 or the fourth latch.
If it is already held in any of the latches 208, the sampling of the video signal in the sampling circuit 204 can be stopped.

When stopping sampling, input of one or both of the clock signal S-CLK and start pulse signal S-SP to the shift register 203 is stopped, and generation of timing signal pulses in the shift register 203 is stopped. Let Shift register 2
When the output of the timing signal pulse from 03 stops, the sampling circuit 204 stops sampling the video signal. Then, in accordance with the read latch signals RS _{1 to} RS ₄ , the same data as the data of the video signal corresponding to the next line period is stored in the first latch 205.
From any of the second latch 206, the third latch 207, or the fourth latch 208,
The signal is input to the DA conversion circuit 209 as a video signal. The DA conversion circuit 209 converts the input digital video signal into an analog video signal and inputs the analog video signal to the pixel unit 200.

As described in this embodiment mode, in the display device of the present invention, a display element included in a pixel in the pixel portion 200 can perform display with an analog video signal.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 5)
In this embodiment mode, a pixel structure of a display device is described. In particular, a pixel structure of a liquid crystal display device will be described.

A pixel structure in which each liquid crystal mode and a transistor are combined will be described with reference to a cross-sectional view of the pixel.

Note that as the transistor, a thin film transistor (TFT) including a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as semi-amorphous) silicon, or the like can be used.

Note that a top gate type, a bottom gate type, or the like can be used as a structure of the transistor. Note that as the bottom-gate transistor, a channel etch type, a channel protection type, or the like can be used.

FIG. 22 is an example of a cross-sectional view of a pixel when a TN mode and a transistor are combined.
By applying the pixel structure shown in FIG. 22 to a liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

Features of the pixel structure shown in FIG. 22 will be described. The liquid crystal molecules 10118 shown in FIG.
It is a long and narrow molecule with a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10118, the length is expressed in FIG. That is, the liquid crystal molecules 1011 expressed in a long way
8, the direction of the major axis is parallel to the paper surface, and the shorter the liquid crystal molecule 10118 expressed, the closer the major axis direction is to the normal direction of the paper surface. That is, the liquid crystal molecules 10118 shown in FIG. 22 are different in the direction of the major axis by 90 degrees between the one close to the first substrate 10101 and the one close to the second substrate 10116, and is positioned in the middle of these. Liquid crystal molecules 101
The direction of the 18 major axes is a direction that smoothly connects them. In other words, the liquid crystal molecules 10118 illustrated in FIG. 22 are formed between the first substrate 10101 and the second substrate 10116 with 90.
The orientation is twisted.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 22, the two substrates are
The first substrate 10101 and the second substrate 10116. Transistors and pixel electrodes are formed on the first substrate. The second substrate includes a light shielding film 10114 and a color filter 101.
15, a fourth conductive layer 10113, a spacer 10117, and a second alignment film 10112 are formed.

Note that the light-blocking film 10114 is not necessarily formed over the second substrate 10116. Shading film 1
In the case where 0114 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1011
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10115 is not necessarily formed over the second substrate 10116.
In the case where the color filter 10115 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10115 is not formed, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1011
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed instead of the spacers 10117. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. On the other hand, in the case where the spacer 10117 is formed, the position of the spacer does not vary, so that the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10101 will be described.

First, the first insulating film 10102 is formed over the first substrate 10101 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10102 is not necessarily formed. The first insulating film 10102 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10103 is formed over the first insulating film 10102 by a photolithography method,
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10104 is formed on the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10104, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10105 and a second semiconductor layer 10106 are formed. Note that the first semiconductor layer 10105 and the second semiconductor layer 10106 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10107 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10107 is processed. In addition,
As the second conductive layer 10107, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10106 is etched using the second conductive layer 10107 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10107. Then, the first conductive layer 10103 where the second semiconductor layer 10106 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10108 is formed, and contact holes are selectively formed in the third insulating film 10108. Note that a contact hole may be formed in the second insulating film 10104 at the same time as a contact hole is formed in the third insulating film 10108. In addition,
The surface of the third insulating film 10108 is preferably as flat as possible. This is because the alignment of liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10109 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a first alignment film 10110 is formed. Note that after the first alignment film 10110 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10101 manufactured as described above, the light-shielding film 10114, and the color filter 10
115, the fourth conductive layer 10113, the spacer 10117, and the second substrate 10116 provided with the second alignment film 10112 are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates. Note that in the TN mode, the fourth conductive layer 10113 is formed over the entire surface of the second substrate 10116.

FIG. 23A shows MVA (Multi-domain Vertical Alignnm).
ent) is an example of a cross-sectional view of a pixel when a method and a transistor are combined. FIG.
By applying the pixel structure shown in (A) to a liquid crystal display device, a liquid crystal display device with a large viewing angle, a high response speed, and a high contrast can be obtained.

Features of the pixel structure illustrated in FIG. The characteristics of the pixel structure of the MVA liquid crystal panel will be described. A liquid crystal molecule 10218 illustrated in FIG. 23A is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10218, the length is expressed in FIG. That is, the long expressed liquid crystal molecule 10218 is
It is assumed that the direction of the major axis is parallel to the paper surface, and the shorter the liquid crystal molecules 10218 expressed, the closer the major axis direction is to the normal direction of the paper surface. In other words, the liquid crystal molecules 10218 illustrated in FIG. 23A are aligned so that the direction of the long axis is the normal direction of the alignment film. Therefore, the liquid crystal molecules 10218 in the portion where the alignment control protrusion 10219 is present are aligned with the alignment control protrusion 10219.
It is oriented radially around 19. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 23A, the two substrates are a first substrate 10201 and a second substrate 10216. Transistors and pixel electrodes are formed on the first substrate. The second substrate includes a light-blocking film 10214, a color filter 10215, a fourth conductive layer 10213, a spacer 10217, and a second alignment film 1021.
2 and an alignment control protrusion 10219 are formed.

Note that the light-blocking film 10214 is not necessarily formed over the second substrate 10216. Shading film 1
In the case where 0214 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1021
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10215 is not necessarily formed over the second substrate 10216.
In the case where the color filter 10215 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10215 is not manufactured, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1021
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10216 instead of the spacers 10217. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case where the spacer 10217 is formed, the position of the spacer does not vary, so that the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10201 is described.

First, the first insulating film 10202 is formed over the first substrate 10201 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10202 is not necessarily formed. The first insulating film 10202 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10203 is formed over the first insulating film 10202 by a photolithography method.
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10204 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10204, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10205 and a second semiconductor layer 10206 are formed. Note that the first semiconductor layer 10205 and the second semiconductor layer 10206 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10207 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10207 is processed. In addition,
As the second conductive layer 10207, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10206 is etched using the second conductive layer 10207 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10207. Then, the first conductive layer 10203 where the second semiconductor layer 10206 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10208 is formed, and contact holes are selectively formed in the third insulating film 10208. Note that a contact hole may be formed in the second insulating film 10204 at the same time as a contact hole is formed in the third insulating film 10208.

Next, the third conductive layer 10209 is formed by a photolithography method, a laser direct drawing method, an ink jet method, or the like.

Next, a first alignment film 10210 is formed. Note that after the first alignment film 10210 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10201 manufactured as described above, the light shielding film 10214, and the color filter 10
215, the fourth conductive layer 10213, the spacer 10217, and the second substrate 10216 over which the second alignment film 10212 is formed are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates. MVA
In the method, the fourth conductive layer 10213 is formed over the entire surface of the second substrate 10216.
Note that an alignment control protrusion 10219 is formed in contact with the fourth conductive layer 10213.
The shape of the orientation control protrusion 10219 is preferably a shape having a smooth curved surface.
By doing so, the alignment of the adjacent liquid crystal molecules 10218 becomes extremely close, so that alignment defects can be reduced. It is possible to reduce alignment film defects caused by alignment film disconnection.

FIG. 23B shows a PVA (Patterned Vertical Alignment).
It is an example of a cross-sectional view of a pixel in the case where a method and a transistor are combined. By applying the pixel structure illustrated in FIG. 23B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a high response speed, and a high contrast can be obtained.

Features of the pixel structure illustrated in FIG. Liquid crystal molecule 1 shown in FIG.
0248 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10248, the length is expressed in FIG. In other words, the liquid crystal molecule 10248 expressed in a long direction has a long axis direction parallel to the paper surface, and the liquid crystal molecule 10248 expressed in a short direction has a long axis direction closer to the normal direction of the paper surface. . In other words, the liquid crystal molecules 10248 illustrated in FIG. 23B are aligned so that the direction of the long axis is the normal direction of the alignment film. Therefore, the liquid crystal molecules 10248 in a portion where the electrode notch 10249 is present
Are radially oriented around the boundary between the electrode notch 10249 and the fourth conductive layer 10243. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 23B, the two substrates are a first substrate 10231 and a second substrate 10246. Transistors and pixel electrodes are formed on the first substrate. The second substrate includes a light shielding film 10244, a color filter 10245, a fourth conductive layer 10243, a spacer 10247, and the second alignment film 1.
0242 is formed.

Note that the light-blocking film 10244 is not necessarily formed over the second substrate 10246. Shading film 1
In the case where 0244 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. Meanwhile, the light shielding film 1024
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10245 is not necessarily formed over the second substrate 10246.
In the case where the color filter 10245 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10245 is not manufactured, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1024
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10246 instead of the spacers 10247. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case of forming the spacer 10247, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10231 will be described.

First, the first insulating film 10232 is formed over the first substrate 10231 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10232 is not necessarily formed. The first insulating film 10232 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10233 is formed over the first insulating film 10232 by a photolithography method,
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10234 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10234, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10235 and a second semiconductor layer 10236 are formed. Note that the first semiconductor layer 10235 and the second semiconductor layer 10236 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10237 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10237 is processed. In addition,
As the second conductive layer 10237, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10236 is etched using the second conductive layer 10237 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10237. Then, the portion of the first conductive layer 10233 from which the second semiconductor layer 10236 is removed becomes a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10238 is formed, and contact holes are selectively formed in the third insulating film 10238. Note that a contact hole may be formed in the second insulating film 10234 at the same time as the contact hole is formed in the third insulating film 10238. In addition,
The surface of the third insulating film 10238 is preferably as flat as possible. This is because the alignment of liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10239 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a first alignment film 10240 is formed. Note that after the first alignment film 10240 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10231 manufactured as described above, the light-shielding film 10244, and the color filter 10
245, the fourth conductive layer 10243, the spacer 10247, and the second substrate 10246 on which the second alignment film 10242 is formed are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates. PVA
In the method, pattern processing is performed on the fourth conductive layer 10243 and the electrode notch 10249 is formed.
Is formed. The shape of the electrode notch 10249 is not limited, but is preferably a shape in which a plurality of rectangles having different directions are combined. By doing so, a plurality of regions having different orientations can be formed, so that a liquid crystal display device with a large viewing angle can be obtained. Note that the fourth conductive layer 10 at the boundary between the electrode notch 10249 and the fourth conductive layer 10243 is used.
The shape of 243 is preferably a smooth curve. By doing so, the alignment of the adjacent liquid crystal molecules 10248 becomes very close, so that alignment defects are reduced. Second alignment film 10
It is possible to reduce defects in the alignment film caused by the step 242 being cut off by the electrode notch 10249.

FIG. 24A is an example of a cross-sectional view of a pixel in the case where an IPS (In-Plane-Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 24A to a liquid crystal display device, a liquid crystal display device having a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

Features of the pixel structure illustrated in FIG. Liquid crystal molecule 1 shown in FIG.
0318 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10318, the length is expressed in FIG. In other words, the liquid crystal molecule 10318 expressed in a long direction has a long axis direction parallel to the paper surface, and the liquid crystal molecule 10318 expressed in a short direction has a long axis direction closer to the normal direction of the paper surface. . In other words, the liquid crystal molecules 10318 illustrated in FIG. 24A are aligned so that the direction of the long axis is always in the horizontal direction to the substrate. In FIG. 24A, the alignment is shown in the absence of an electric field. However, when an electric field is applied to the liquid crystal molecules 10318, the orientation of the major axis is always in the horizontal plane with the substrate kept in the horizontal direction. Rotate with. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 24A, the two substrates are a first substrate 10301 and a second substrate 10316. Transistors and pixel electrodes are formed on the first substrate. A light-blocking film 10314, a color filter 10315, a spacer 10317, and a second alignment film 10312 are formed over the second substrate.

Note that the light-blocking film 10314 is not necessarily formed over the second substrate 10316. Shading film 1
When 0314 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1031
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10315 is not necessarily formed over the second substrate 10316.
In the case where the color filter 10315 is not formed, the number of steps is reduced, so that manufacturing cost can be reduced. However, even when the color filter 10315 is not formed, a display device capable of color display by field sequential driving can be obtained. Since the structure is simple, the yield can be improved. On the other hand, the color filter 1031
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10316 instead of the spacers 10317. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
When the spacer 10317 is formed, the position of the spacer does not vary, so that the distance between the two substrates can be uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10301 is described.

First, the first insulating film 10302 is formed over the first substrate 10301 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10302 is not necessarily formed. The first insulating film 10302 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10303 is formed over the first insulating film 10302 by a photolithography method.
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10304 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10304, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10305 and a second semiconductor layer 10306 are formed. Note that the first semiconductor layer 10305 and the second semiconductor layer 10306 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10307 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that dry etching is preferable as an etching method performed when the shape of the second conductive layer 10307 is processed. In addition,
As the second conductive layer 10307, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10306 is etched using the second conductive layer 10307 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10307. The first conductive layer 10303 where the second semiconductor layer 10306 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10308 is formed, and contact holes are selectively formed in the third insulating film 10308. Note that a contact hole may be formed in the second insulating film 10304 at the same time as a contact hole is formed in the third insulating film 10308.

Next, the third conductive layer 10309 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Here, the shape of the third conductive layer 10309 is two comb teeth that are meshed with each other. One comb-like electrode is electrically connected to one of the source electrode and the drain electrode of the transistor, and the other comb-like electrode is electrically connected to the common electrode. By doing so, a horizontal electric field can be effectively applied to the liquid crystal molecules 10318.

Next, a first alignment film 10310 is formed. Note that after the first alignment film 10310 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10301 manufactured as described above, the light shielding film 10314, and the color filter 10
315, the spacer 10317, and the second alignment film 10312 are attached to each other with a gap of several micrometers by a sealant. Then, a liquid crystal material is injected between the two substrates.

FIG. 24B is an example of a cross-sectional view of a pixel in the case where an FFS (Fringe Field Switching) method and a transistor are combined. By applying the pixel structure shown in FIG. 24B to a liquid crystal display device, a liquid crystal display device having a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

Features of the pixel structure illustrated in FIG. Liquid crystal molecule 1 shown in FIG.
0348 is an elongated molecule having a major axis and a minor axis. In order to show the direction of the liquid crystal molecules 10348, the length is expressed in FIG. In other words, the liquid crystal molecule 10348 expressed in a long direction has a direction of the long axis parallel to the paper surface, and the liquid crystal molecule 10348 expressed in a short direction has a long axis direction closer to the normal direction of the paper surface. . In other words, the liquid crystal molecules 10348 illustrated in FIG. 26B are aligned so that the direction of the long axis is always in the horizontal direction to the substrate. FIG. 26B shows the alignment in the absence of an electric field. However, when an electric field is applied to the liquid crystal molecules 10348, the orientation of the major axis always remains horizontal with the substrate, and the horizontal plane is maintained. Rotate with. In this state, a liquid crystal display device with a large viewing angle can be obtained.

Note that a case where a bottom-gate transistor using an amorphous semiconductor is used as a transistor is described. In the case of using a transistor including an amorphous semiconductor, a liquid crystal display device can be manufactured at low cost using a large-area substrate.

The liquid crystal display device has a basic part that displays an image, called a liquid crystal panel. The liquid crystal panel is bonded with two processed substrates with a gap of several micrometers,
It is manufactured by injecting a liquid crystal material between two substrates. In FIG. 26B, the two substrates are a first substrate 10331 and a second substrate 10346. Transistors and pixel electrodes are formed on the first substrate, and the light shielding film 10344 and the color filter 1 are formed on the second substrate.
0345, a spacer 10347, and a second alignment film 10342 are formed.

Note that the light-blocking film 10344 is not necessarily formed over the second substrate 10346. Shading film 1
In the case where 0344 is not formed, the manufacturing cost can be reduced because the number of steps is reduced. Since the structure is simple, the yield can be improved. On the other hand, the light shielding film 1034
When 4 is formed, a display device with little light leakage during black display can be obtained.

Note that the color filter 10345 is not necessarily formed over the second substrate 10346.
In the case where the color filter 10345 is not formed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. However, even when the color filter 10345 is not formed, a display device capable of color display by field sequential driving can be obtained. On the other hand, the color filter 1034
When forming 5, a display device capable of color display can be obtained.

Note that spherical spacers may be dispersed over the second substrate 10346 instead of the spacers 10347. When the spherical spacers are dispersed, the number of steps is reduced, so that the manufacturing cost can be reduced. Since the structure is simple, the yield can be improved. on the other hand,
In the case where the spacer 10347 is formed, since the position of the spacer does not vary, the distance between the two substrates can be made uniform, and a display device with little display unevenness can be obtained.

Processing performed on the first substrate 10331 will be described.

First, the first insulating film 10332 is formed over the first substrate 10331 by a sputtering method, a printing method, a coating method, or the like. Note that the first insulating film 10332 is not necessarily formed. The first insulating film 10332 has a function of preventing impurities from the substrate from affecting the semiconductor layer and changing the characteristics of the transistor.

Next, a first conductive layer 10333 is formed over the first insulating film 10332 by a photolithography method.
It is formed by a laser direct drawing method or an ink jet method.

Next, a second insulating film 10334 is formed over the entire surface by a sputtering method, a printing method, a coating method, or the like. In the second insulating film 10334, impurities from the substrate affect the semiconductor layer,
It has a function of preventing changes in characteristics of the transistor.

Next, a first semiconductor layer 10335 and a second semiconductor layer 10336 are formed. Note that the first semiconductor layer 10335 and the second semiconductor layer 10336 are successively formed, and the shapes thereof are processed at the same time.

Next, the second conductive layer 10337 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Note that as an etching method performed when the shape of the second conductive layer 10337 is processed, dry etching is preferable. In addition,
As the second conductive layer 10337, a transparent material or a reflective material may be used.

Next, a channel region of the transistor is formed. An example of the process will be described. The second semiconductor layer 10336 is etched using the second conductive layer 10337 as a mask. Alternatively, etching is performed using a mask for processing the shape of the second conductive layer 10337. Then, the first conductive layer 10333 where the second semiconductor layer 10336 is removed serves as a transistor and a channel region. By doing so, the number of masks can be reduced, so that the manufacturing cost can be reduced.

Next, a third insulating film 10338 is formed, and contact holes are selectively formed in the third insulating film 10338.

Next, the fourth conductive layer 10343 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like.

Next, a fourth insulating film 10349 is formed, and contact holes are selectively formed in the fourth insulating film 10349. Note that the surface of the fourth insulating film 10349 is preferably as flat as possible. This is because the alignment of liquid crystal molecules is affected by the unevenness of the surface in contact with the liquid crystal.

Next, the third conductive layer 10339 is formed by a photolithography method, a laser direct drawing method, an inkjet method, or the like. Here, the third conductive layer 10339 has a comb shape.

Next, a first alignment film 10340 is formed. Note that after the first alignment film 10340 is formed,
In order to control the alignment of liquid crystal molecules, rubbing may be performed. The rubbing is a process of streaking the alignment film by rubbing the alignment film with a cloth. By performing rubbing, the alignment film can be provided with orientation.

The first substrate 10331 manufactured as described above, the light shielding film 10344, and the color filter 10
A liquid crystal panel can be manufactured by bonding 345, the spacer 10347, and the second alignment film 10342 with a sealant with a gap of several micrometers and injecting a liquid crystal material between the two substrates.

Here, materials that can be used for each conductive layer or each insulating film will be described.

The first insulating film 10102 in FIG. 22, the first insulating film 10202 in FIG. 23A, and FIG.
), The first insulating film 10302 in FIG. 24A, and the first insulating film 10332 in FIG. 24B, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film ( An insulating film such as SiOxNy can be used. Alternatively, the first insulating film 101
For 02, an insulating film having a stacked structure in which two or more films of a silicon oxide film, a silicon nitride film, a silicon oxynitride film (SiOxNy), or the like are combined can be used.

First conductive layer 10103 in FIG. 22, first conductive layer 10203 in FIG. 23A, FIG.
), The first conductive layer 10303 in FIG. 24A, the first conductive layer 10303 in FIG. 24A, and the first conductive layer 10333 in FIG. Mo, Ti
Al, Nd, Cr, or the like can be used. Alternatively, Mo, Ti, Al, Nd, C
A stacked structure in which two or more of r and the like are combined can also be used.

The second insulating film 10104 in FIG. 22, the second insulating film 10204 in FIG. 23A, and FIG.
) Second insulating film 10234, second insulating film 10304 in FIG. 24A, and second insulating film 10334 in FIG. 24B are a thermal oxide film, a silicon oxide film, a silicon nitride film, or an oxide film. A silicon nitride film or the like can be used. Alternatively, a stacked structure in which two or more of a thermal oxide film, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, and the like are combined can be used. Note that a silicon oxide film is preferable in a portion in contact with the semiconductor layer. This is because the trap level at the interface with the semiconductor layer is reduced when a silicon oxide film is used. Note that a silicon nitride film is preferable in a portion in contact with Mo.
This is because the silicon nitride film does not oxidize Mo.

The first semiconductor layer 10105 in FIG. 22, the first semiconductor layer 10205 in FIG.
FIG. 24B illustrates the first semiconductor layer 10235 in FIG. 24B, the first semiconductor layer 10305 in FIG.
As the first semiconductor layer 10335 in (B), silicon or silicon germanium (Si
Ge) or the like can be used.

The second semiconductor layer 10106 in FIG. 22, the second semiconductor layer 10206 in FIG.
The second semiconductor layer 10236 in FIG. 24B, the second semiconductor layer 10306 in FIG.
As the second semiconductor layer 10336 in (B), silicon containing phosphorus or the like can be used.

The second conductive layer 10107 and the third conductive layer 10109 in FIG. 22, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 23A, the second conductive layer 10237 in FIG. The second conductive layer 10239, the second conductive layer 10307 in FIG. 24A, and the second conductive layer 1
As a material having transparency of the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 24B, indium tin oxide in which tin oxide is mixed with indium oxide is used. (ITO) film, indium tin oxide (ITSO) film in which silicon oxide is mixed with indium tin oxide (ITO), indium zinc oxide (IZO) film in which zinc oxide is mixed in zinc oxide, zinc oxide film or oxide A tin film or the like can be used. Note that IZO is a transparent conductive material formed by sputtering using a target in which 2 to 20 wt% of zinc oxide (ZnO) is mixed with ITO.

The second conductive layer 10107 and the third conductive layer 10109 in FIG. 22, the second conductive layer 10207 and the third conductive layer 10209 in FIG. 23A, the second conductive layer 10237 in FIG. The second conductive layer 10239, the second conductive layer 10307 in FIG. 24A, and the second conductive layer 1
As materials having reflectivity of the second conductive layer 10337, the second conductive layer 10339, and the fourth conductive layer 10343 in FIG. 24B, Ti, Mo, Ta, Cr, W
Al or the like can be used. Alternatively, a two-layer structure in which Ti, Mo, Ta, Cr, W, and Al are stacked, or a three-layer structure in which Al is sandwiched between metals such as Ti, Mo, Ta, Cr, and W may be used.

The third insulating film 10108 in FIG. 22, the third insulating film 10208 in FIG. 23A, and FIG.
) Third insulating film 10238, FIG. 23B third conductive layer 10239, FIG. 24A third insulating film 10308, FIG. 24B third insulating film 10338 and fourth Insulating film 10
As the material 349, an inorganic material (such as silicon oxide, silicon nitride, or silicon oxynitride) or a low dielectric constant organic compound material (such as a photosensitive or non-photosensitive organic resin material) can be used. Alternatively, a material containing siloxane can be used. Siloxane is a material in which a skeleton structure is formed by a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

The first alignment film 10110 in FIG. 22, the first alignment film 10210 in FIG. 23A, and FIG.
), The first alignment film 10310 in FIG. 23B, and the first alignment film 10340 in FIG. 24B can be a polymer film such as polyimide.

Next, a pixel structure in the case where each liquid crystal mode and a transistor are combined will be described with reference to a top view (layout diagram) of the pixel.

As the liquid crystal mode, TN (Twisted Nematic) mode, IPS (
In-Plane-Switching mode, FFS (Fringe Field)
Switching mode, MVA (Multi-domain Vertical)
Alignment mode, PVA (Patterned Vertical Ali)
gmnent), ASM (Axial Symmetric Aligned Mi)
cro-cell) mode, OCB (Optical Compensated Bir)
efficiency mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liquid)
d Crystal) or the like can be used.

Note that as the transistor, a thin film transistor (TFT) including a non-single-crystal semiconductor layer typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as semi-amorphous) silicon, or the like can be used.

Note that a top gate type, a bottom gate type, or the like can be used as a structure of the transistor. As the bottom-gate transistor, a channel etch type, a channel protection type, or the like can be used.

FIG. 25 is an example of a top view of a pixel in the case where a TN mode and a transistor are combined.
By applying the pixel structure shown in FIG. 25 to a liquid crystal display device, the liquid crystal display device can be manufactured at low cost.

25 includes a scanning line 10401, a video signal line 10402, and a capacitor line 10403.
A transistor 10404, a pixel electrode 10405, and a pixel capacitor 10406.

The scan line 10401 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 402 denotes a function for transmitting a signal (video signal) to a pixel. The scanning line 104
Since 01 and the video signal line 10402 are arranged in a matrix, they are formed of different conductive layers. Note that the scan line 10401. A semiconductor layer may be disposed at an intersection with the video signal line 10402. In this way, the scanning line 10401 is obtained. Video signal line 10
402 and the cross capacitance can be reduced.

The capacitor line 10403 is arranged in parallel with the pixel electrode 10405. A portion where the capacitor line 10403 and the pixel electrode 10405 overlap is a pixel capacitor 10406. Note that a part of the capacitor line 10403 extends along the video signal line 10402 so as to surround the video signal line 10402. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10402. Note that the capacitor line 10403 and the video signal line 1040
By disposing the semiconductor layer between the two, the cross capacitance can be reduced. In addition,
The capacitor line 10403 is formed using a material similar to that of the scan line 10401.

The transistor 10404 functions as a switch for electrically connecting the video signal line 10402 and the pixel electrode 10405. Note that one of the source region and the drain region of the transistor 10404 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10404. Thus, the channel width of the transistor 10404 is increased, so that switching ability can be improved. Note that the transistor 10404
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10405 is electrically connected to one of a source electrode and a drain electrode of the transistor 10404. The pixel electrode 10405 is an electrode for applying a signal voltage transmitted through the video signal line 10402 to the liquid crystal element. Note that the pixel electrode 10405 is rectangular. By doing so, the aperture ratio of the pixel can be increased. The pixel electrode 1040
As 5, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10405.

FIG. 26A is an example of a top view of a pixel in the case where an MVA method and a transistor are combined. By applying the pixel structure shown in FIG. 26A to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a high response speed, and a high contrast can be obtained.

A pixel illustrated in FIG. 26A includes a scan line 10501, a video signal line 10502, and a capacitor line 10.
503, a transistor 10504, a pixel electrode 10505, a pixel capacitor 10506,
An orientation control protrusion 10507.

The scan line 10501 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 502 denotes a function for transmitting a signal (video signal) to a pixel. Scan line 105
Since 01 and the video signal line 10502 are arranged in a matrix, they are formed of different conductive layers. Note that the scan line 10501. A semiconductor layer may be disposed at an intersection with the video signal line 10502. In this way, the scanning line 10501 is obtained. Video signal line 10
502 and cross capacitance can be reduced.

The capacitor line 10503 is arranged in parallel with the pixel electrode 10505. A portion where the capacitor line 10503 and the pixel electrode 10505 overlap with each other is a pixel capacitor 10506. Note that a part of the capacitor line 10503 extends along the video signal line 10502 so as to surround the video signal line 10502. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10502. Note that the capacitor line 10503 and the video signal line 1050
By disposing the semiconductor layer between the two, the cross capacitance can be reduced. In addition,
The capacitor line 10503 is formed using a material similar to that of the scan line 10501.

The transistor 10504 functions as a switch for electrically connecting the video signal line 10502 and the pixel electrode 10505. Note that one of the source region and the drain region of the transistor 10504 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10504. Thus, the channel width of the transistor 10504 is increased, so that switching ability can be improved. Note that the transistor 10504
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10505 is electrically connected to one of a source electrode and a drain electrode of the transistor 10504. The pixel electrode 10505 is an electrode for applying a signal voltage transmitted through the video signal line 10502 to the liquid crystal element. Note that the pixel electrode 10505 is rectangular. By doing so, the aperture ratio of the pixel can be increased. The pixel electrode 1050
As 5, a material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10505.

The orientation control protrusion 10507 is formed on the counter substrate. The alignment control protrusion 10507 has a function of radially aligning liquid crystal molecules. The shape of the alignment control protrusion 10507 is not limited. For example, the shape of the orientation control protrusion 10507 may be a dogleg shape. By doing so, it is possible to form a plurality of regions having different alignments of liquid crystal molecules. The viewing angle can be improved.

FIG. 26B is an example of a top view of a pixel in the case where a PVA method and a transistor are combined. By applying the pixel structure shown in FIG. 26B to a liquid crystal display device, a liquid crystal display device with a wide viewing angle, a high response speed, and a high contrast can be obtained.

A pixel illustrated in FIG. 26B includes a scan line 10511, a video signal line 10512, and a capacitor line 10.
513, a transistor 10514, a pixel electrode 10515, a pixel capacitor 10516,
An electrode notch portion 10517.

The scan line 10511 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
512 has a function for transmitting a signal (video signal) to a pixel. Scan line 105
11 and the video signal line 10512 are arranged in a matrix, and are formed of different conductive layers. Note that the scan line 10511 is used. A semiconductor layer may be disposed at an intersection with the video signal line 10512. In this way, the scanning line 10511 is obtained. Video signal line 10
512 and cross capacitance can be reduced.

The capacitor line 10513 is arranged in parallel with the pixel electrode 10515. A portion where the capacitor line 10513 and the pixel electrode 10515 overlap with each other is a pixel capacitor 10516. Note that a part of the capacitor line 10513 extends along the video signal line 10512 so as to surround the video signal line 10512. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10512. Note that the capacitor line 10513 and the video signal line 1051 are provided.
By disposing the semiconductor layer between the two, the cross capacitance can be reduced. In addition,
The capacitor line 10513 is formed using a material similar to that of the scan line 10511.

The transistor 10514 functions as a switch for electrically connecting the video signal line 10512 and the pixel electrode 10515. Note that one of the source region and the drain region of the transistor 10514 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10514. Thus, the channel width of the transistor 10514 is increased, so that switching ability can be improved. Note that the transistor 10514
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10515 is electrically connected to one of a source electrode and a drain electrode of the transistor 10514. The pixel electrode 10515 is an electrode for applying a signal voltage transmitted through the video signal line 10512 to the liquid crystal element. Note that the pixel electrode 10515 has a shape that matches the shape of the electrode notch 10517. Specifically, the electrode notch 10517
The shape is such that a portion in which the pixel electrode 10515 is not formed is formed in a portion without the mark. By doing so, it is possible to form a plurality of regions having different alignments of liquid crystal molecules. The viewing angle can be improved. Note that the pixel electrode 10515 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10515.

FIG. 27A is an example of a top view of a pixel in the case where an IPS mode and a transistor are combined. By applying the pixel structure shown in FIG. 27A to a liquid crystal display device, a liquid crystal display device having a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

The pixel illustrated in FIG. 27A includes a scan line 10601, a video signal line 10602, and a common electrode 1.
0603, a transistor 10604, and a pixel electrode 10605.

The scan line 10601 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 602 denotes a function for transmitting a signal (video signal) to a pixel. Scan line 106
Since 01 and the video signal line 10602 are arranged in a matrix, they are formed of different conductive layers. Note that a semiconductor layer may be provided at an intersection between the scanning line 10601 and the video signal line 10602. In this way, the scanning line 10601 is obtained. Video signal line 106
02 and cross capacitance can be reduced. Note that the video signal line 10602 is connected to the pixel electrode 10.
It is formed in accordance with the shape of 605.

The common electrode 10603 is disposed in parallel with the pixel electrode 10605. Common electrode 1060
Reference numeral 3 denotes an electrode for generating a horizontal electric field. Note that the common electrode 10603 has a bent comb shape. Note that part of the common electrode 10603 extends along the video signal line 10602 so as to surround the video signal line 10602. By doing so, crosstalk can be reduced. Crosstalk is a phenomenon in which the potential of an electrode that should hold a potential changes with a change in potential of the video signal line 10602. Note that by disposing a semiconductor layer between the common electrode 10603 and the video signal line 10602, cross capacitance can be reduced. Note that a portion of the common electrode 10603 arranged in parallel with the scan line 10601 is formed using a material similar to that of the scan line 10601. Common electrode 106
The portion arranged in parallel with the pixel electrode 10605 of 03 is made of the same material as that of the pixel electrode 10605.

The transistor 10604 functions as a switch for electrically connecting the video signal line 10602 and the pixel electrode 10605. Note that one of the source region and the drain region of the transistor 10604 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10604. Thus, the channel width of the transistor 10604 is increased, so that switching ability can be improved. Note that the transistor 10604
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10605 is electrically connected to one of a source electrode and a drain electrode of the transistor 10604. The pixel electrode 10505 is an electrode for applying a signal voltage transmitted through the video signal line 10602 to the liquid crystal element. Note that the pixel electrode 10605 has a bent comb-like shape. By doing so, a transverse electric field can be applied to the liquid crystal molecules.
A plurality of regions having different alignment of liquid crystal molecules can be formed. The viewing angle can be improved. Note that the pixel electrode 10605 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10605.

Note that the comb-like portion of the common electrode 10603 and the pixel electrode 10605 may be formed of different conductive layers. For example, the comb-like portion of the common electrode 10603 is the scanning line 1
It may be formed of the same conductive layer as 0601 or the video signal line 10602. Similarly, the pixel electrode 10605 may be formed using the same conductive layer as the scan line 10601 or the video signal line 10602.

FIG. 27B is a top view of a pixel in the case where the FFS method and a transistor are combined. By applying the pixel structure shown in FIG. 27B to a liquid crystal display device, a liquid crystal display device having a large viewing angle in principle and a small dependence of response speed on gray scale can be obtained.

The pixel illustrated in FIG. 27B includes a scanning line 10611, a video signal line 10612, and the common electrode 1.
0613, a transistor 10614, and a pixel electrode 10615 may be provided.

The scan line 10611 has a function of transmitting a signal (scan signal) to the pixel. Video signal line 10
Reference numeral 612 has a function of transmitting a signal (video signal) to the pixel. Scan line 106
11 and the video signal line 10612 are arranged in a matrix, and are formed of different conductive layers. Note that the scan line 10611. A semiconductor layer may be disposed at an intersection with the video signal line 10612. In this way, the scanning line 10611 is obtained. Video signal line 10
612 and the cross capacitance can be reduced. Note that the video signal line 10612 is connected to the pixel electrode 1.
It is formed to match the shape of 0615.

The common electrode 10613 is uniformly formed below the pixel electrode 10615 and below the pixel electrode 10615 and the pixel electrode 10615. Note that as the common electrode 10613,
A material having transparency or a material having reflectivity can be used. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the common electrode 10613.

The transistor 10614 functions as a switch for electrically connecting the video signal line 10612 and the pixel electrode 10615. Note that one of the source region and the drain region of the transistor 10604 is disposed so as to be surrounded by the other of the source region and the drain region of the transistor 10614. Thus, the channel width of the transistor 10614 is increased, so that switching ability can be improved. Note that the transistor 10614
The gate electrode is disposed so as to surround the semiconductor layer.

The pixel electrode 10615 is electrically connected to one of a source electrode and a drain electrode of the transistor 10614. The pixel electrode 10515 is an electrode for applying a signal voltage transmitted through the video signal line 10612 to the liquid crystal element. Note that the pixel electrode 10615 has a bent comb-like shape. By doing so, a transverse electric field can be applied to the liquid crystal molecules.
Note that the comb-like pixel electrode 10615 is disposed closer to the liquid crystal layer than the uniform portion of the common electrode 10613. A plurality of regions having different alignment of liquid crystal molecules can be formed.
The viewing angle can be improved. Note that the pixel electrode 10615 can be formed using a transparent material or a reflective material. Alternatively, a material having transparency and a material having reflectivity may be combined and used for the pixel electrode 10615.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 6)
In the present embodiment, the peripheral portion of the liquid crystal panel will be described.

FIG. 28 shows a backlight unit 20101 called an edge light type and the liquid crystal panel 2.
An example of a liquid crystal display device having 0107 is shown. The edge light type is a method in which a light source is arranged at the end of the backlight unit and the fluorescence of the light source is emitted from the entire light emitting surface.
The edge-light type backlight unit is thin and can save power.

The backlight unit 20101 includes a diffusion plate 20102, a light guide plate 20103, and a reflection plate 20.
104, a lamp reflector 20105 and a light source 20106.

The light source 20106 has a function of emitting light as necessary. For example, as the light source 20106, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20105 has a function of efficiently guiding the fluorescence from the light source 20106 to the light guide plate 20103. The light guide plate 20103 has a function of totally reflecting fluorescence and guiding light to the entire surface. The diffuser plate 20102 has a function of reducing unevenness in brightness. The reflector 20104 is
It has a function of reflecting and reusing light leaked downward from the light guide plate 20103 (the direction opposite to the liquid crystal panel 20107).

Note that a control circuit for adjusting the luminance of the light source 20106 is connected to the backlight unit 20101. With this control circuit, the luminance of the light source 20106 can be adjusted.

FIGS. 29A, 29B, 29C, and 29D are diagrams showing a detailed configuration of an edge light type backlight unit. Note that description of the diffusion plate, the light guide plate, and the reflection plate is omitted.

A backlight unit 20201 illustrated in FIG. 29A has a cold cathode tube 20203 as a light source.
It is the structure using. And in order to reflect the light from the cold cathode tube 20203 efficiently,
A ramp reflector 20202 is provided. Such a configuration is often used for a large display device because of the intensity of luminance from the cold cathode fluorescent lamp.

A backlight unit 20211 illustrated in FIG. 29B includes a light-emitting diode (L
ED) 20213 is used. For example, a white light emitting diode (W) 20
213 are arranged at predetermined intervals. A lamp reflector 20212 is provided to efficiently reflect light from the light emitting diode 20213.

Since the luminance of the light emitting diode is high, a structure using the light emitting diode is suitable for a large display device. Since the color reproducibility of the light emitting diode is excellent, the arrangement area can be reduced. Therefore, it is possible to reduce the frame of the display device.

Note that in the case where the light-emitting diode is mounted on a large display device, the light-emitting diode can be disposed on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

A backlight unit 20221 illustrated in FIG. 29C includes a light-emitting diode (LED) 20223, a light-emitting diode 20224 (LED), and a light-emitting diode (LED) 20225 for each color RGB as a light source. Each color RGB light emitting diode 20223 (L
ED), the light emitting diode 20224 (LED), and the light emitting diode 20225 (LED) are arranged at predetermined intervals. Each color RGB light emitting diode 2023 (LED),
By using the light emitting diode 20224 (LED) and the light emitting diode 20225 (LED), color reproducibility can be improved. A lamp reflector 20222 is provided to efficiently reflect light from the light emitting diode.

Since the luminance of the light emitting diode is high, a configuration using light emitting diodes of each color RGB as a light source is suitable for a large display device. Since the color reproducibility is excellent, the arrangement area can be reduced. Therefore, it is possible to reduce the frame of the display device.

Note that color display can be performed by sequentially lighting the RGB light emitting diodes according to time. This is the so-called field sequential mode.

In addition, the light emitting diode which emits white, and the light emitting diode 20223 (LED of each color RGB)
), A light emitting diode 20224 (LED), and a light emitting diode 20225 (LED) can be combined.

Note that in the case where the light-emitting diode is mounted on a large display device, the light-emitting diode can be disposed on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

A backlight unit 20231 illustrated in FIG. 30D includes a light-emitting diode (LED) 20233, a light-emitting diode (LED) 20234, and a light-emitting diode (LED) 20235 for each color RGB as a light source. For example, each color RGB light emitting diode (LE
D) 20233, light emitting diode 20234 (LED), light emitting diode 20235 (L
A plurality of colors (for example, green) having a low emission intensity among ED) are arranged. By using the light emitting diode 20233 (LED), the light emitting diode 20234 (LED), and the light emitting diode 20235 (LED) of each color RGB, color reproducibility can be improved. A lamp reflector 20232 is provided to efficiently reflect light from the light emitting diode.

Since the luminance of the light emitting diode is high, a configuration using light emitting diodes of each color RGB as a light source is suitable for a large display device. Since the color reproducibility of the light emitting diode is excellent, the arrangement area can be reduced. Therefore, it is possible to reduce the frame of the display device.

Note that color display can be performed by sequentially lighting the RGB light emitting diodes according to time. This is the so-called field sequential mode.

In addition, the light emitting diode which emits white, and the light emitting diode 20233 (LED of each color RGB)
), A light emitting diode 20234 (LED), and a light emitting diode 20235 (LED) can be combined.

Note that in the case where the light-emitting diode is mounted on a large display device, the light-emitting diode can be disposed on the back surface of the substrate. The light emitting diodes maintain a predetermined interval, and the light emitting diodes of each color are arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

FIG. 32A illustrates an example of a liquid crystal display device including a backlight unit called a direct type and a liquid crystal panel. The direct type is a method in which a light source is arranged directly under a light emitting surface to emit fluorescence of the light source from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20500 includes a diffusion plate 20501, a light shielding plate 20502, a lamp reflector 20503, and a light source 20504.

The light source 20504 has a function of emitting light as necessary. For example, as the light source 20505, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20503 has a function of efficiently guiding the fluorescence of the light source 20504 to the diffusion plate 20501 and the light shielding plate 20502. The light shielding plate 20502 has a function of reducing unevenness in brightness by increasing the light shielding as the light is stronger in accordance with the arrangement of the light sources 20504. The diffusion plate 20501 further has a function of reducing brightness unevenness.

Note that a control circuit for adjusting the luminance of the light source 20504 is connected to the backlight unit 20500. With this control circuit, the luminance of the light source 20504 can be adjusted.

FIG. 32B illustrates an example of a liquid crystal display device including a backlight unit called a direct type and a liquid crystal panel. The direct type is a method in which a light source is arranged directly under a light emitting surface to emit fluorescence of the light source from the entire light emitting surface. The direct type backlight unit can efficiently use the amount of emitted light.

The backlight unit 20510 includes a diffusion plate 20511, a light shielding plate 20512, a lamp reflector 20513, RGB light sources (R) 20514a, light sources (G) 20514b, and light sources (B) 20514c.

Each color RGB light source 20514a (R), light source 20514b (G) and light source 20514c (
B) has a function of emitting light as necessary. For example, light source 20514a (R), light source 2
As the 0514b (G) and the light source 20514c (B), a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used. The lamp reflector 20513 has a function of efficiently guiding the fluorescence of the light source 20514 to the diffusion plate 20511 and the light shielding plate 20512. The light-shielding plate 20512 has a function of reducing unevenness in brightness by increasing the light-shielding as the light is stronger in accordance with the arrangement of the light sources 20514. The diffusion plate 20511 further has a function of reducing brightness unevenness.

Note that the backlight unit 20510 is connected to a control circuit for adjusting the luminance of each color RGB light source 20514a (R), light source 20514b (G), and light source 20514c (B). By this control circuit, each color RGB light source 20514a (R), light source 20
The brightness of 514b (G) and the light source 20514c (B) can be adjusted.

FIG. 30 is a diagram illustrating an example of a configuration of a polarizing plate (also referred to as a polarizing film).

Polarizing film 20300 is protective film 20301, substrate film 20302, PVA
A polarizing film 20303, a substrate film 20304, an adhesive layer 20305, and a release film 20306 are included.

The PVA polarizing film 20303 has a function of generating light only in a certain vibration direction (linearly polarized light). Specifically, the PVA polarizing film 20303 includes molecules (polarizers) whose electron densities are greatly different from each other vertically and horizontally. The PVA polarizing film 20303 can produce linearly polarized light by aligning the directions of molecules in which the electron density is greatly different in the vertical and horizontal directions.

As an example, the PVA polarizing film 20303 is made of polyvinyl alcohol (Poly Vi).
Nyl Alcohol) is doped with an iodine compound, and the PVA film is pulled in a certain direction, whereby a film in which iodine molecules are arranged in a certain direction can be obtained. And the light parallel to the long axis of an iodine molecule is absorbed by the iodine molecule. In addition, a dichroic dye may be used instead of iodine for high durability use and high heat resistance use. The dye is preferably used in a liquid crystal display device that requires durability and heat resistance, such as an in-vehicle LCD or a projector LCD.

The PVA polarizing film 20303 is a film (substrate film 20302 that serves as a base material on both sides).
And the substrate film 20304), the reliability can be increased. PVA
The polarizing film 20303 may be sandwiched between highly transparent and highly durable triacetylrose (TAC) films. In addition, a board | substrate film and a TAC film function as a protective layer of the polarizer which the PVA polarizing film 20303 has.

One substrate film (substrate film 20304) has an adhesive layer 20305 attached to a glass substrate of a liquid crystal panel. Note that the adhesive layer 20305 is formed by applying an adhesive to a substrate film (substrate film 20304) on one side. Adhesive layer 203
05 is provided with a release film 20306 (separate film).

The other substrate film (substrate film 20302) is provided with a protective film 20301.

Note that a hard coat scattering layer (anti-glare layer) may be provided on the surface of the polarizing film 20300. The hard coat scattering layer has fine irregularities formed on the surface by AG treatment, and has an antiglare function for scattering external light, so that reflection of external light on the liquid crystal panel can be prevented. Surface reflection can be prevented.

Note that a plurality of optical thin film layers having different refractive indexes may be formed on the surface of the polarizing film 20300 (also referred to as anti-reflection treatment or AR treatment). The multilayered optical thin film layer having a plurality of refractive indexes can reduce the reflectance of the surface due to the light interference effect.

FIG. 31 is a diagram illustrating an example of a system block of the liquid crystal display device.

In the pixel portion 20405, a signal line 20412 is extended from the signal line driver circuit 20403. In the pixel portion 20405, a scanning line 20410 is extended from the scanning line driver circuit 20404. A plurality of pixels are arranged in a matrix in the intersection region between the signal line 20412 and the scanning line 20410. Note that each of the plurality of pixels has a switching element. Therefore, a voltage for controlling the tilt of the liquid crystal molecules can be independently input to each of the plurality of pixels. A structure in which switching elements are provided in each intersection region in this way is called an active type. However, it is not limited to such an active type, and may be a passive type configuration. Since the passive type has no switching element in each pixel, the process is simple.

The driver circuit portion 20408 includes a control circuit 20402, a signal line driver circuit 20403, and a scan line driver circuit 20404. A video signal 20401 is input to the control circuit 20402. In response to the video signal 20401, the control circuit 20402 receives a signal line driver circuit 2040.
3 and the scanning line driving circuit 20404 are controlled. Therefore, the video signal 20401 is input to the signal line driver circuit 20403 and the scan line driver circuit 20404, respectively. In response to this control signal, the signal line driver circuit 20403 sends the video signal to the signal line 2041.
2, the scan line driver circuit 20404 inputs a scan signal to the scan line 20410. Then, a switching element included in the pixel is selected according to the scanning signal, and a video signal is input to the pixel electrode of the pixel.

Note that the control circuit 20402 also controls the power supply 20407 in accordance with the video signal 20401. The power supply 20407 has means for supplying power to the lighting means 20406. As the lighting unit 20406, an edge light type backlight unit or a direct type backlight unit can be used. However, a front light may be used as the illumination means 20406. The front light is a plate-like light unit that is mounted on the front side of the pixel portion and is configured by a light emitter and a light guide that illuminate the whole. By such illumination means,
The pixel portion can be illuminated uniformly with low power consumption.

As shown in FIG. 31B, the scan line driver circuit 20404 includes circuits that function as a shift register 20441, a level shifter 20442, and a buffer 20443. Signals such as a gate start pulse (GSP) and a gate clock signal (GCK) are input to the shift register 20441.

As shown in FIG. 31C, the signal line driver circuit 20403 includes a shift register 20431, a first latch 20432, a second latch 20433, a level shifter 20434, and a buffer 2.
A circuit functioning as 0435 is included. The circuit functioning as the buffer 20435 is a circuit having a function of amplifying a weak signal and includes an operational amplifier and the like. Level shifter 20
A signal such as a start pulse (SSP) is input to 434, and data (DATA) such as a video signal is input to the first latch 20432. The second latch 20433 has a latch (LAT
) Signals can be temporarily stored and input to the pixel portion 20405 all at once. This is called line sequential driving. Therefore, the second latch can be omitted if the pixel performs dot sequential driving instead of line sequential driving.

Note that in this embodiment, a known liquid crystal panel can be used. For example, a configuration in which a liquid crystal layer is sealed between two substrates can be used as the liquid crystal panel.
On one substrate, a transistor, a capacitor, a pixel electrode, an alignment film, or the like is formed. Note that a polarizing plate, a retardation plate, or a prism sheet may be disposed on the side opposite to the upper surface of one of the substrates. On the other substrate, a color filter, a black matrix, a counter electrode, an alignment film, or the like is formed. Note that a polarizing plate or a retardation plate may be disposed on the side opposite to the upper surface of the other substrate. Note that the color filter and the black matrix may be formed on the upper surface of one of the substrates. Note that three-dimensional display can be performed by arranging slits (lattices) on the upper surface side of one substrate or the opposite side thereof.

In addition, it is possible to arrange | position a polarizing plate, a phase difference plate, and a prism sheet between two board | substrates, respectively. Alternatively, it can be integrated with either of the two substrates.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 7)
In this embodiment, a method for driving a display device will be described. In particular, a method for driving a liquid crystal display device will be described.

First, overdrive driving will be described with reference to FIG. (A) in FIG.
It shows the time change of the output luminance with respect to the input voltage of the display element. The time change of the output luminance of the display element with respect to the input voltage 30121 represented by the broken line is the same as the output luminance 30123 similarly represented by the broken line. That is, the voltage for obtaining the target output luminance L ₀ is Vi, but when Vi is input as it is as the input voltage, a time corresponding to the response speed of the element is required until the target output luminance L ₀ is reached. I need it.

Overdrive drive is a technique for increasing the response speed. Specifically, first,
By increasing the response speed of the output luminance by supplying a predetermined time element Vo is a voltage greater than Vi, after close to output luminance L ₀ of the objective, returning the input voltage Vi, a method called.
At this time, the input voltage is represented as an input voltage 30122, and the output luminance is represented as an output luminance 30124. Graph of the output luminance 30124, the time up to the luminance _{L 0} of the objective, is shorter than the graph of the output luminance 30123.

In FIG. 33A, the case where the output luminance changes positively with respect to the input voltage has been described. However, the present embodiment includes the case where the output luminance changes negatively with respect to the input voltage. It is out.

A circuit for realizing such driving will be described with reference to FIGS. 33B and 33C. First, the case where the input video signal 30131 is an analog value (or may be a discrete value) and the output video signal 30132 is also a signal having an analog value will be described with reference to FIG. The overdrive circuit shown in FIG. 33B includes an encoding circuit 30101, a frame memory 30102, a correction circuit 30103, and a DA conversion circuit 301.
04.

The input video signal 30131 is first input to the encoding circuit 30101 and encoded. That is, the analog signal is converted into a digital signal having an appropriate number of bits. Thereafter, the converted digital signal is input to the frame memory 30102 and the correction circuit 30103, respectively. The video signal of the previous frame held in the frame memory 30102 is also input to the correction circuit 30103 at the same time. Then, the correction circuit 30103 outputs a corrected video signal according to a numerical table prepared in advance from the video signal of the frame and the video signal of the previous frame. At this time, an output switching signal 30133 may be input to the correction circuit 30103 so that the corrected video signal and the video signal of the frame can be switched and output. Next, the corrected video signal or the video signal of the frame is input to the DA conversion circuit 30104. Then, an output video signal 30132 which is an analog signal having a value according to the corrected video signal or the video signal of the frame is output. In this way, overdrive driving can be realized.

Next, a case where the input video signal 30131 takes a digital value and the output video signal 30132 also takes a digital value will be described with reference to FIG. FIG.
3 (C) includes a frame memory 30112 and a correction circuit 301.
13.

The input video signal 30131 is a digital signal. First, the frame memory 30112,
Input to the correction circuit 30113. The video signal of the previous frame held in the frame memory 30112 is also input to the correction circuit 30113 at the same time. Then, the correction circuit 30113 outputs a corrected video signal according to a numerical table prepared in advance from the video signal of the frame and the video signal of the previous frame. At this time, an output switching signal 30133 may be input to the correction circuit 30113 so that the corrected video signal and the video signal of the frame can be switched and output. In this way, overdrive driving can be realized.

Note that the overdrive circuit in this embodiment includes a case where the input video signal 30131 is an analog signal and the output video signal 30132 is a digital signal. At this time,
The DA converter circuit 30104 may be omitted from the circuit shown in FIG. The overdrive circuit in this embodiment includes a case where the input video signal 30131 is a digital signal and the output video signal 30132 is an analog signal. At this time, the encoding circuit 30101 may be omitted from the circuit illustrated in FIG.

Next, driving for manipulating the potential of the common line will be described with reference to FIG. (
A) shows a plurality of pixel circuits when one common line is arranged for one scanning line in a display device using a capacitive display element such as a liquid crystal element. FIG. A pixel circuit illustrated in FIG. 34A includes a transistor 30201, an auxiliary capacitor 30202, a display element 30203, a video signal line 30204, a scanning line 30205, and a common line 30206.

The gate electrode of the transistor 30201 is electrically connected to the scan line 30205, one of the source electrode and the drain electrode of the transistor 30201 is electrically connected to the video signal line 30204, and the other of the source electrode and the drain electrode of the transistor 30201 Are electrically connected to one electrode of the auxiliary capacitor 30202 and one electrode of the display element 30203.
The other electrode of the auxiliary capacitor 30202 is electrically connected to the common line 30206.

First, in the pixel selected by the scanning line 30205, the transistor 30201 is turned on, so that the display element 30203 and the auxiliary capacitor 3 are connected through the video signal line 30204, respectively.
A voltage corresponding to the video signal is applied to 0202. At this time, the video signal is the common line 30.
When the lowest gradation is displayed for all the pixels connected to 206, or when the highest gradation is displayed for all the pixels connected to the common line 30206, the pixel It is not necessary to write a video signal via the video signal line 30204 respectively.
Instead of writing a video signal through the video signal line 30204, the voltage applied to the display element 30203 can be changed by moving the potential of the common line 30206.

Next, FIG. 34B shows a display device using a display element having a capacitive property such as a liquid crystal element when two common lines are arranged for one scanning line. It is a figure showing a plurality of pixel circuits. The pixel circuit illustrated in FIG. 34B includes a transistor 30211, an auxiliary capacitor 30212, a display element 30213, a video signal line 30214, a scanning line 30215, a first common line 30216, and a second common line 30217. .

The gate electrode of the transistor 30211 is electrically connected to the scan line 30215, one of the source electrode and the drain electrode of the transistor 30211 is electrically connected to the video signal line 30214, and the other of the source electrode and the drain electrode of the transistor 30211 Is electrically connected to one electrode of the auxiliary capacitor 30212 and one electrode of the display element 30213.
In addition, the other electrode of the auxiliary capacitor 30212 is electrically connected to the first common line 30216.
In the pixel adjacent to the pixel, the other electrode of the auxiliary capacitor 30212 is electrically connected to the second common line 30217.

In the pixel circuit illustrated in FIG. 34B, since the number of pixels electrically connected to one common line is small, instead of writing a video signal through the video signal line 30214, the first common line 30216 is used. Alternatively, the frequency with which the voltage applied to the display element 30213 can be changed by moving the potential of the second common line 30217 is significantly increased. Further, source inversion driving or dot inversion driving is possible. By source inversion driving or dot inversion driving, flicker can be suppressed while improving element reliability.

Next, the scanning backlight will be described with reference to FIG. FIG. 35A is a diagram showing a scanning backlight in which cold cathode tubes are juxtaposed. The scanning backlight shown in FIG. 35A includes a diffusion plate 30301 and N cold cathode tubes 30302-1 to 30302 -N. N cold cathode tubes 30302-1 to 30302 -N are juxtaposed behind the diffuser plate 30301, so that the N cold cathode tubes 30302-1 to 30302 -N scan with varying luminance. Can do.

A change in luminance of each cold cathode tube during scanning will be described with reference to FIG. First, the luminance of the cold cathode fluorescent lamp 30302-1 is changed for a certain time. Then, after that, the cold cathode tube 30
The luminance of the cold cathode fluorescent lamp 30302-2 arranged next to 302-1 is changed for the same time. In this way, the luminance is changed in order from the cold cathode fluorescent lamps 30302-1 to 30302-N. In FIG. 35C, the luminance to be changed for a certain time is smaller than the original luminance, but may be larger than the original luminance. Also, cold cathode fluorescent lamps 30302-1 to 3030
Although scanning up to 2-N is performed, scanning from cold cathode fluorescent lamps 30302-N to 30302-1 may be performed in the reverse direction.

By driving as shown in FIG. 35, the average luminance of the backlight can be reduced. Therefore, the power consumption of the backlight, which accounts for most of the power consumption of the liquid crystal display device, can be reduced.

An LED may be used as the light source of the scanning backlight. The scanning backlight in that case is as shown in FIG. The scanning backlight shown in FIG. 35B includes a diffusion plate 30311 and light sources 30312-1 to 30312 -N in which LEDs are juxtaposed. When the LED is used as the light source of the scanning backlight, the backlight is thin,
There is an advantage that can be lightened. Further, there is an advantage that the color reproduction range can be expanded. Further, LEs juxtaposed on each of the light sources 30312-1 to 30312 -N juxtaposed with LEDs.
Since D can also be scanned in the same manner, it can also be a dot scanning backlight.
If the point scanning type is adopted, the image quality of the moving image can be further improved.

Note that even when an LED is used as the light source of the backlight, it can be driven with the luminance changed as shown in FIG.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 8)
In this embodiment, a structure and operation of a pixel which can be applied to a liquid crystal display device will be described.

In this embodiment, TN (Twisted Nem) is used as the operation mode of the liquid crystal.
atic) mode, IPS (In-Plane-Switching) mode, FFS (
Fringe Field Switching (MVA) mode, MVA (Multi-dom)
ain Vertical Alignment) mode, PVA (Patterned)
Vertical Alignment), ASM (Axial Symmetric)
ic aligned Micro-cell) mode, OCB (Optical Co)
mpensated birefringence) mode, FLC (Ferroele)
cttric Liquid Crystal) mode, AFLC (Anti Ferroe)
electric Liquid Crystal) or the like can be used.

FIG. 36A illustrates an example of a pixel structure which can be applied to the liquid crystal display device.

A pixel 40100 includes a transistor 40101, a liquid crystal element 40102, and a capacitor 4010.
3. A gate of the transistor 40101 is connected to the wiring 40105.
A first terminal of the transistor 40101 is connected to the wiring 40104. Transistor 4
The second terminal of 0101 is connected to the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103. The second electrode of the liquid crystal element 40102 corresponds to the counter electrode 40107. A second electrode of the capacitor 40103 is connected to the wiring 40106.

The wiring 40104 functions as a signal line. The wiring 40105 functions as a scanning line. The wiring 40106 functions as a capacitor line. The transistor 40101 functions as a switch. The capacitor 40103 functions as a storage capacitor.

The transistor 40101 only needs to function as a switch. The polarity of the transistor 40101 may be a P-channel type or an N-channel type.

Note that a video signal is input to the wiring 40104. A scan signal is input to the wiring 40105. A certain potential is supplied to the wiring 40106. The scanning signal is an H level or L level digital voltage signal. In the case where the transistor 40101 is an n-channel transistor, the H level of the scanning signal is a potential at which the transistor 40101 can be turned on, and the L level of the scanning signal is a potential at which the transistor 40101 can be turned off. Alternatively, transistor 4
When 0101 is a P-channel type, the H level of the scanning signal is a potential at which the transistor 40101 can be turned off, and the L level of the scanning signal is a potential at which the transistor 40101 can be turned on. The video signal is an analog voltage. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. Note that the constant potential supplied to the wiring 40106 is preferably equal to the potential of the counter electrode 40107.

The operation of the pixel 40100 will be described separately for the case where the transistor 40101 is on and the case where the transistor 40101 is off.

In the case where the transistor 40101 is on, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) and the first electrode of the capacitor 40103 are electrically connected. Accordingly, the video signal is input from the wiring 40104 to the first electrode (pixel electrode) of the liquid crystal element 40102 and the first electrode of the capacitor 40103 through the transistor 40101.
The capacitor 40103 holds a potential difference between the video signal and the potential supplied to the wiring 40106.

In the case where the transistor 40101 is off, the wiring 40104 and the liquid crystal element 40102
The first electrode (pixel electrode) and the first electrode of the capacitor 40103 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40102 and the first electrode of the capacitor 40103 are in a floating state. Since the capacitor 40103 holds a potential difference between the video signal and the potential supplied to the wiring 40106, the first electrode of the liquid crystal element 40102 and the first of the capacitor 40103 are used.
The electrode maintains the same (corresponding) potential as the video signal. Note that the liquid crystal element 40102 includes:
The transmittance corresponds to the video signal.

FIG. 36B illustrates an example of a pixel structure which can be applied to the liquid crystal display device. In particular, FIG.
6B is a diagram illustrating an example of a pixel configuration which can be applied to a liquid crystal display device suitable for a horizontal electric field mode (including an IPS mode and an FFS mode).

The pixel 40110 includes a transistor 40111, a liquid crystal element 40112, and a capacitor 4011.
3. A gate of the transistor 40111 is connected to the wiring 40115.
A first terminal of the transistor 40111 is connected to the wiring 40114. Transistor 4
The second terminal of 0111 is connected to the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113. A second electrode of the liquid crystal element 40112 is connected to the wiring 40116. A second electrode of the capacitor 40113 is connected to the wiring 40116.

The wiring 40114 functions as a signal line. The wiring 40115 functions as a scan line. The wiring 40116 functions as a capacitor line. The transistor 40111 functions as a switch. The capacitor 40113 functions as a storage capacitor.

The transistor 40111 only needs to function as a switch. The polarity of the transistor 40111 may be a P-channel type or an N-channel type.

Note that a video signal is input to the wiring 40114. A scan signal is input to the wiring 40115. A certain potential is supplied to the wiring 40116. The scanning signal is an H level or L level digital voltage signal. In the case where the transistor 40111 is an n-channel transistor, the H level of the scanning signal is a potential at which the transistor 40111 can be turned on, and the L level of the scanning signal is a potential at which the transistor 40111 can be turned off. Alternatively, transistor 4
When 0111 is a P-channel type, the H level of the scanning signal is a potential at which the transistor 40111 can be turned off, and the L level of the scanning signal is a potential at which the transistor 40111 can be turned on. The video signal is an analog voltage. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40110 will be described separately for the case where the transistor 40111 is on and the case where the transistor 40111 is off.

In the case where the transistor 40111 is on, the wiring 40114 and the liquid crystal element 40112
The first electrode (pixel electrode) and the first electrode of the capacitor 40113 are electrically connected. Therefore, the video signal is input from the wiring 40114 to the first electrode (pixel electrode) of the liquid crystal element 40112 and the first electrode of the capacitor 40113 through the transistor 40111.
The capacitor 40113 holds a potential difference between the video signal and the potential supplied to the wiring 40116.

In the case where the transistor 40111 is off, the wiring 40114 and the liquid crystal element 40112
The first electrode (pixel electrode) and the first electrode of the capacitor 40113 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40112 and the first electrode of the capacitor 40113 are in a floating state. Since the capacitor 40113 holds a potential difference between the video signal and the potential supplied to the wiring 40116, the first electrode of the liquid crystal element 40112 and the first of the capacitor 40113 are used.
The electrode maintains the same (corresponding) potential as the video signal. Note that the liquid crystal element 40112 includes
The transmittance corresponds to the video signal.

FIG. 37 is a diagram illustrating an example of a pixel configuration applicable to the liquid crystal display device. In particular, FIG.
This is an example of a pixel configuration that can increase the aperture ratio of the pixel by reducing the number of wirings.

FIG. 37 shows two pixels (pixel 40200 and pixel 40210) arranged in the same column direction. For example, when the pixel 40200 is arranged in the Nth row, the pixel 40210 is N + 1.
Located on the line.

The pixel 40200 includes a transistor 40201, a liquid crystal element 40202, and a capacitor 4020.
3. A gate of the transistor 40201 is connected to the wiring 40205.
A first terminal of the transistor 40201 is connected to the wiring 40204. Transistor 4
A second terminal 0201 is connected to the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203. The second electrode of the liquid crystal element 40202 corresponds to the counter electrode 40207. A second electrode of the capacitor 40203 is connected to the same wiring as the gate of the transistor in the previous row.

A pixel 40210 includes a transistor 40211, a liquid crystal element 40212, and a capacitor 4021.
3. A gate of the transistor 40211 is connected to the wiring 40215.
A first terminal of the transistor 40211 is connected to the wiring 40204. Transistor 4
The second terminal of 0211 is connected to the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213. A second electrode of the liquid crystal element 40212 corresponds to the counter electrode 40217. The second electrode of the capacitor 40213 has the same wiring (wiring 40205) as the gate of the transistor in the previous row.
It is connected to the.

The wiring 40204 functions as a signal line. The wiring 40205 functions as an N-th scanning line. The wiring 40206 functions as a capacitor line in the Nth row. The transistor 40201 functions as a switch. The capacitor 40203 functions as a storage capacitor.

The wiring 40214 functions as a signal line. The wiring 40215 functions as a scan line of the (N + 1) th row. The wiring 40216 functions as a capacitor line in the (N + 1) th row. Transistor 4021
1 functions as a switch. The capacitor 40213 functions as a storage capacitor.

The transistor 40201 and the transistor 40211 may function as switches,
The polarity of the transistor 40201 and the polarity of the transistor 40211 may be a P-channel type or an N-channel type.

Note that a video signal is input to the wiring 40204. The wiring 40205 has a scanning signal (
(Nth line) is input. A scanning signal (N + 1th row) is input to the wiring 40215.

The scanning signal is an H level or L level digital voltage signal. Transistor 40201 (
In the case where the transistor 40211) is an n-channel transistor, the H level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned on, and the L level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned off. Alternatively, in the case where the transistor 40201 (or the transistor 40211) is a P-channel type,
The H level of the scanning signal is a potential at which the transistor 40201 (or the transistor 40211) can be turned off, and the L level of the scanning signal is the transistor 40201 (or the transistor 40211).
). The video signal is an analog voltage. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal.

The operation of the pixel 40200 will be described separately for the case where the transistor 40201 is on and the case where the transistor 40201 is off.

In the case where the transistor 40201 is on, the wiring 40204 and the liquid crystal element 40202
The first electrode (pixel electrode) and the first electrode of the capacitor 40203 are electrically connected. Accordingly, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40202 and the first electrode of the capacitor 40203 through the transistor 40201.
The capacitor 40203 holds a potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the previous row.

In the case where the transistor 40201 is off, the wiring 40204 and the liquid crystal element 40202 are displayed.
The first electrode (pixel electrode) and the first electrode of the capacitor 40203 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 are in a floating state. Since the capacitor 40203 holds a potential difference between the video signal and the potential supplied to the same wiring as the gate of the transistor in the previous row, the first electrode of the liquid crystal element 40202 and the first electrode of the capacitor 40203 Maintain the same (corresponding) potential as the signal. In addition,
The liquid crystal element 40202 has a transmittance corresponding to the video signal.

The operation of the pixel 40210 will be described separately for the case where the transistor 40211 is on and the case where the transistor 40211 is off.

In the case where the transistor 40211 is on, the wiring 40204 and the liquid crystal element 40212
The first electrode (pixel electrode) and the first electrode of the capacitor 40213 are electrically connected. Accordingly, the video signal is input from the wiring 40204 to the first electrode (pixel electrode) of the liquid crystal element 40212 and the first electrode of the capacitor 40213 through the transistor 40211.
The capacitor 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row.

In the case where the transistor 40211 is off, the wiring 40204 and the liquid crystal element 40212
The first electrode (pixel electrode) and the first electrode of the capacitor 40213 are electrically disconnected. Accordingly, the first electrode of the liquid crystal element 40212 and the first electrode of the capacitor 40213 are in a floating state. Since the capacitor 40213 holds a potential difference between the video signal and the potential supplied to the same wiring (wiring 40205) as the gate of the transistor in the previous row, the liquid crystal element 4021 is maintained.
The second first electrode and the first electrode of the capacitor 40213 maintain the same (corresponding) potential as the video signal. Note that the liquid crystal element 40212 has transmittance in accordance with the video signal.

FIG. 38 is a diagram illustrating an example of a pixel configuration applicable to the liquid crystal display device. In particular, FIG.
It is an example of the pixel structure which can improve a viewing angle by using a sub pixel.

The pixel 40320 includes a sub-pixel 40300 and a sub-pixel 40310. Pixel 403
Although the case where 20 has two sub-pixels will be described, the pixel 40320 may have three or more sub-pixels.

The sub-pixel 40300 includes a transistor 40301, a liquid crystal element 40302, and a capacitor element 40.
303. A gate of the transistor 40301 is connected to the wiring 40305. A first terminal of the transistor 40301 is connected to the wiring 40304. A second terminal of the transistor 40301 is a first electrode of the liquid crystal element 40302 and a first terminal of the capacitor 40303.
Connected to the electrode. A second electrode of the liquid crystal element 40302 corresponds to the counter electrode 40307. A second electrode of the capacitor 40303 is connected to the wiring 40306.

The sub-pixel 40310 includes a transistor 40311, a liquid crystal element 40312, and a capacitor 40.
313. A gate of the transistor 40311 is connected to the wiring 40315. A first terminal of the transistor 40301 is connected to the wiring 40304. The second terminal of the transistor 40311 is a first electrode of the liquid crystal element 40312 and a first terminal of the capacitor 40313.
Connected to the electrode. A second electrode of the liquid crystal element 40312 corresponds to the counter electrode 40317. A second electrode of the capacitor 40313 is connected to the wiring 40306.

The wiring 40304 functions as a signal line. The wiring 40305 functions as a scanning line. The wiring 40315 functions as a signal line. The wiring 40306 functions as a capacitor line. The transistor 40301 functions as a switch. The transistor 40311 functions as a switch. The capacitor 40303 functions as a storage capacitor. The capacitor 40313 functions as a storage capacitor.

The transistor 40301 only needs to function as a switch. The polarity of the transistor 40301 may be a P-channel type or an N-channel type. The transistor 40311 only needs to function as a switch, and the transistor 40311 may have a P-channel polarity or N
It may be a channel type.

Note that a video signal is input to the wiring 40304. A scan signal is input to the wiring 40305. A scan signal is input to the wiring 40315. A certain potential is supplied to the wiring 40306.

The scanning signal is an H level or L level digital voltage signal. Transistor 403
When 01 (or the transistor 40311) is an N-channel type, the H level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned on, and the L level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off. . Alternatively, when the transistor 40301 (or the transistor 40311) is a p-channel transistor, the H level of the scanning signal is a potential at which the transistor 40301 (or the transistor 40311) can be turned off, and the L level of the scanning signal is the transistor 40301 (or the transistor 40).
311) is a potential that can be turned on. The video signal is an analog voltage. The video signal has a potential lower than the H level of the scanning signal and higher than the L level of the scanning signal. In addition,
The constant potential supplied to the wiring 40306 is the potential of the counter electrode 40307 or the counter electrode 4.
It is preferably equal to the potential of 0317.

Regarding the operation of the pixel 40320, the transistor 40301 is turned on and the transistor 4031 is turned on.
1 is turned off, the transistor 40301 is turned off and the transistor 40311 is turned on, and the transistor 40301 and the transistor 40311 are turned off.

In the case where the transistor 40301 is on and the transistor 40311 is off, in the subpixel 40300, the wiring 40304 and the first electrode (pixel electrode) of the liquid crystal element 40302
And the first electrode of the capacitor 40303 is electrically connected. Accordingly, the video signal is input from the wiring 40304 to the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303 through the transistor 40301. Then, the capacitive element 403
03 holds the potential difference between the video signal and the potential supplied to the wiring 40306. At this time, in the subpixel 40310, the wiring 40304 and the first electrode of the liquid crystal element 40312 (
The pixel electrode) and the first electrode of the capacitor 40313 are electrically disconnected. Accordingly, the video signal is not input to the sub-pixel 40310.

When the transistor 40301 is off and the transistor 40311 is on, in the subpixel 40300, the wiring 40304 and the first electrode (pixel electrode) of the liquid crystal element 40302
In addition, the first electrode of the capacitor 40303 is electrically disconnected. Therefore, the liquid crystal element 40
The first electrode 302 and the first electrode of the capacitor 40303 are in a floating state. Capacitance element 403
03 holds the potential difference between the video signal and the potential supplied to the wiring 40306; therefore, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 have the same (corresponding) potential as the video signal. maintain. At this time, in the sub-pixel 40310, the wiring 4030
4 is electrically connected to the first electrode (pixel electrode) of the liquid crystal element 40312 and the first electrode of the capacitor 40313. Accordingly, the video signal is transmitted from the wiring 40304 to the transistor 4.
The first electrode (pixel electrode) of the liquid crystal element 40312 and the capacitor element 40313 are provided via 0311.
To the first electrode. The capacitor 40313 holds a potential difference between the video signal and the potential supplied to the wiring 40316.

When the transistor 40301 and the transistor 40311 are off, the subpixel 4
At 0300, the wiring 40304 is electrically disconnected from the first electrode (pixel electrode) of the liquid crystal element 40302 and the first electrode of the capacitor 40303. Therefore, the liquid crystal element 4030
The second first electrode and the first electrode of the capacitor 40303 are in a floating state. Capacitance element 40303
Holds the potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40302 and the first electrode of the capacitor 40303 are the same as the video signal (
(Corresponding) maintain the potential. Note that the liquid crystal element 40302 has a transmittance according to the video signal. At this time, in the sub pixel 40310, the wiring 40304, the first electrode (pixel electrode) of the liquid crystal element 40312, and the first electrode of the capacitor 40313 are electrically cut off. Accordingly, the first electrode of the liquid crystal element 40312 and the first electrode of the capacitor 40313 are in a floating state. Since the capacitor 40313 holds a potential difference between the video signal and the potential supplied to the wiring 40306, the first electrode of the liquid crystal element 40312 and the capacitor 403
Thirteen first electrodes maintain the same (corresponding) potential as the video signal. The liquid crystal element 40
Reference numeral 312 denotes a transmittance corresponding to the video signal.

The video signal input to the sub-pixel 40300 may have a value different from the video signal input to the sub-pixel 40310. In this case, the alignment of the liquid crystal molecules of the liquid crystal element 40302 is changed to the liquid crystal element 4.
Since the orientation of the liquid crystal molecules can be different from that of 0312, the viewing angle can be widened.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 9)
In this embodiment, various liquid crystal modes will be described.

First, various liquid crystal modes will be described with reference to cross-sectional views.

39A and 39B are schematic views of cross sections of a TN mode.

A liquid crystal layer 50100 is sandwiched between a first substrate 50101 and a second substrate 50102 which are arranged to face each other. A first electrode 501 is provided on an upper surface of the first substrate 50101.
05 is formed. A second electrode 50106 is formed on the top surface of the second substrate 50102. A first polarizing plate 50103 is provided on the side of the first substrate 50101 opposite to the liquid crystal layer. A second polarizing plate 50104 is disposed on the opposite side of the second substrate 50102 from the liquid crystal layer. Note that the first polarizing plate 50103 and the second polarizing plate 50104 are arranged to be crossed Nicols.

The first polarizing plate 50103 may be disposed on the upper surface of the first substrate 50101. The second polarizing plate 50104 may be disposed on the upper surface of the second substrate 50102.

It is sufficient that at least one (or both) of the first electrode 50105 and the second electrode 50106 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 39A is a schematic view of a cross section in the case where voltage is applied to the first electrode 50105 and the second electrode 50106 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged vertically,
The light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the 1st polarizing plate 50
Since 103 and the second polarizing plate 50104 are arranged so as to be crossed Nicols, light from the backlight cannot pass through the substrate. Therefore, black display is performed.

Note that by controlling voltage applied to the first electrode 50105 and the second electrode 50106, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 39B is a schematic view of a cross section when voltage is not applied to the first electrode 50105 and the second electrode 50106. Since the liquid crystal molecules are aligned horizontally and rotated in a plane, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50103 and the second polarizing plate 50104 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed. This is a so-called normally white mode.

The liquid crystal display device having the structure illustrated in FIGS. 39A and 39B can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50101 side or the second substrate 50102 side.

A known liquid crystal material may be used for the TN mode.

40A and 40B are schematic views of cross sections of the VA mode. The VA mode is a mode in which liquid crystal molecules are aligned so as to be perpendicular to the substrate when there is no electric field.

A liquid crystal layer 50200 is sandwiched between a first substrate 50201 and a second substrate 50202 which are arranged to face each other. On the top surface of the first substrate 50201, the first electrode 502 is provided.
05 is formed. A second electrode 50206 is formed on the top surface of the second substrate 50202. A first polarizing plate 50203 is provided on the side of the first substrate 50201 opposite to the liquid crystal layer. A second polarizing plate 50204 is provided on the opposite side of the second substrate 50202 from the liquid crystal layer. Note that the first polarizing plate 50203 and the second polarizing plate 50204 are arranged so as to be crossed Nicols.

The first polarizing plate 50203 may be disposed on the upper surface of the first substrate 50201. The second polarizing plate 50204 may be disposed on the upper surface of the second substrate 50202.

It is sufficient that at least one (or both) of the first electrode 50205 and the second electrode 50206 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 40A is a schematic view of a cross section when voltage is applied to the first electrode 50205 and the second electrode 50206 (referred to as a vertical electric field mode). Since the liquid crystal molecules are aligned horizontally,
Light from the backlight is affected by the birefringence of the liquid crystal molecules. Then, the first polarizing plate 502
Since 03 and the second polarizing plate 50204 are arranged so as to be crossed Nicols, the light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50205 and the second electrode 50206. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 40B is a schematic view of a cross section when voltage is not applied to the first electrode 50205 and the second electrode 50206. Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50203 and the second polarizing plate 50204 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

The liquid crystal display device having the structure illustrated in FIGS. 40A and 40B can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50201 side or the second substrate 50202 side.

As the liquid crystal material used for the VA mode, a known material may be used.

40C and 40D are schematic views of cross sections of the MVA mode. The MVA mode is a method for mutually compensating the viewing angle dependency of each part.

A liquid crystal layer 50210 is sandwiched between a first substrate 50211 and a second substrate 50212 which are arranged to face each other. A first electrode 50211 is provided on an upper surface of the first substrate 50211.
15 is formed. A second electrode 50216 is formed on the top surface of the second substrate 50212. On the first electrode 50215, a first protrusion 502117 is formed for alignment control. A second protrusion 502118 is formed over the second electrode 50216 for alignment control. On the side opposite to the liquid crystal layer of the first substrate 50211, a first polarizing plate 50213 is provided.
Is arranged. On the side opposite to the liquid crystal layer of the second substrate 50212, a second polarizing plate 5021 is provided.
4 is arranged. Note that the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to be crossed Nicols.

The first polarizing plate 50213 may be disposed on the top surface of the first substrate 50211. The second polarizing plate 50214 may be disposed on the upper surface of the second substrate 50212.

It is only necessary that at least one (or both) of the first electrode 50215 and the second electrode 50216 have a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 40C is a schematic view of a cross section when voltage is applied to the first electrode 50215 and the second electrode 50216 (referred to as a vertical electric field mode). Since the liquid crystal molecules are tilted and arranged with respect to the first protrusions 502117 and the second protrusions 502118, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that by controlling voltage applied to the first electrode 50215 and the second electrode 50216, the state of liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 40D is a schematic view of a cross section when voltage is not applied to the first electrode 50215 and the second electrode 50216. Since the liquid crystal molecules are arranged vertically, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50213 and the second polarizing plate 50214 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

The liquid crystal display device having the structure illustrated in FIGS. 40C and 40D can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50211 side or the second substrate 50212 side.

As the liquid crystal material used for the MVA mode, a known material may be used.

41A and 41B are schematic views of cross sections of the OCB mode. In the OCB mode, the alignment of the liquid crystal molecules forms an optically compensated state in the liquid crystal layer, and thus the viewing angle dependency is small. This state of the liquid crystal molecules is called bend alignment.

A liquid crystal layer 50300 is sandwiched between a first substrate 50301 and a second substrate 50302 which are arranged to face each other. A first electrode 503 is provided on an upper surface of the first substrate 50301.
05 is formed. A second electrode 50306 is formed on the top surface of the second substrate 50302. A first polarizing plate 50303 is provided on the opposite side of the first substrate 50301 from the liquid crystal layer. On the opposite side of the second substrate 50302 from the liquid crystal layer, a second polarizing plate 50304 is provided. Note that the first polarizing plate 50303 and the second polarizing plate 50304 are arranged so as to be crossed Nicols.

The first polarizing plate 50303 may be disposed on the upper surface of the first substrate 50301. The second polarizing plate 50304 may be disposed on the upper surface of the second substrate 50302.

It is sufficient that at least one (or both) of the first electrode 50305 and the second electrode 50306 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 41A is a schematic view of a cross section when voltage is applied to the first electrode 50305 and the second electrode 50306 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged vertically,
The light from the backlight is not affected by the birefringence of the liquid crystal molecules. And the 1st polarizing plate 50
Since 303 and the second polarizing plate 50304 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50305 and the second electrode 50306. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 41B is a schematic view of a cross section when voltage is not applied to the first electrode 50305 and the second electrode 50306. Since the liquid crystal molecules are in a bend alignment state, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50303 and the second polarizing plate 50304 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed. This is a so-called normally white mode.

The liquid crystal display device having the structure illustrated in FIGS. 41A and 41B can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50301 side or the second substrate 50302 side.

A known material may be used as the liquid crystal material used in the OCB mode.

41C and 41D are schematic views of cross sections of the FLC mode or the AFLC mode.

A liquid crystal layer 50310 is sandwiched between a first substrate 50311 and a second substrate 50312 which are arranged to face each other. On the top surface of the first substrate 50311, the first electrode 503 is provided.
15 is formed. A second electrode 50316 is formed on the top surface of the second substrate 5031. A first polarizing plate 50313 is provided on the opposite side of the first substrate 50311 from the liquid crystal layer. A second polarizing plate 50314 is disposed on the opposite side of the second substrate 50312 from the liquid crystal layer. Note that the first polarizing plate 50313 and the second polarizing plate 50314 are arranged so as to be crossed Nicols.

The first polarizing plate 50313 may be disposed on the upper surface of the first substrate 50311. The second polarizing plate 50314 may be disposed on the upper surface of the second substrate 5031.

It is only necessary that at least one (or both) of the first electrode 50315 and the second electrode 50316 have a light-transmitting property (transmission type or reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 41C is a schematic view of a cross section when voltage is applied to the first electrode 50315 and the second electrode 50316 (referred to as a vertical electric field mode). Since the liquid crystal molecules are arranged side by side in a direction shifted from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. And since the 1st polarizing plate 50313 and the 2nd polarizing plate 50314 are arrange | positioned so that it may become crossed Nicols, the light from a backlight passes a board | substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling voltage applied to the first electrode 50315 and the second electrode 50316. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 41D is a schematic view of a cross section when voltage is not applied to the first electrode 50315 and the second electrode 50316. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. And since the 1st polarizing plate 50313 and the 2nd polarizing plate 50314 are arrange | positioned so that it may become crossed Nicols, the light from a backlight does not pass a board | substrate. Therefore, black display is performed. This is a so-called normally black mode.

The liquid crystal display device having the structure illustrated in FIGS. 41C and 41D can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50311 side or the second substrate 50312 side.

As the liquid crystal material used in the FLC mode or AFLC mode, a known material may be used.

42A and 42B are schematic views of cross sections of the IPS mode. The IPS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate, and the electrode is only on one substrate side. The provided horizontal electric field method is adopted.

A liquid crystal layer 50400 is sandwiched between a first substrate 50401 and a second substrate 50402 which are arranged to face each other. A first electrode 504 is provided on an upper surface of the first substrate 50401.
05 and the second electrode 50406 are formed. A first polarizing plate 50403 is provided on the side of the first substrate 50401 opposite to the liquid crystal layer. A second polarizing plate 50404 is provided on the opposite side of the second substrate 50402 from the liquid crystal layer. Note that the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to be crossed Nicols.

The first polarizing plate 50403 may be disposed on the upper surface of the first substrate 50401. The second polarizing plate 50404 may be disposed on the upper surface of the second substrate 50402.

It is sufficient that at least one (or both) of the first electrode 50405 and the second electrode 50406 has a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 42A is a schematic view of a cross section when voltage is applied to the first electrode 50405 and the second electrode 50406 (referred to as a vertical electric field mode). Since the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode 50405 and the second electrode 50406. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 42B is a schematic view of a cross section when voltage is not applied to the first electrode 50405 and the second electrode 50406. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50403 and the second polarizing plate 50404 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

The liquid crystal display device having the structure illustrated in FIGS. 42A and 42B can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50401 side or the second substrate 50402 side.

As the liquid crystal material used for the IPS mode, a known material may be used.

42C and 42D are schematic views of cross sections of the FFS mode. The FFS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate, and the electrode is only on one substrate side. The provided horizontal electric field method is adopted.

A liquid crystal layer 50410 is sandwiched between a first substrate 50411 and a second substrate 50412 which are arranged to face each other. A second electrode 504 is provided on the upper surface of the first substrate 50411.
16 is formed. An insulating film 50417 is formed on the top surface of the second electrode 50416. A second electrode 50416 is formed over the insulating film 50417. A first polarizing plate 50413 is provided on the side of the first substrate 50411 opposite to the liquid crystal layer. On the opposite side of the second substrate 50412 from the liquid crystal layer, a second polarizing plate 50414 is provided. In addition,
The first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to be crossed Nicols.

The first polarizing plate 50413 may be disposed on the top surface of the first substrate 50411. The second polarizing plate 50414 may be disposed on the upper surface of the second substrate 50412.

It is only necessary that at least one (or both) of the first electrode 50415 and the second electrode 50416 have a light-transmitting property (a transmission type or a reflection type). Or both electrodes may have translucency and a part of one electrode may have reflectivity (semi-transmissive type).

FIG. 42C is a schematic view of a cross section in the case where voltage is applied to the first electrode 50415 and the second electrode 50416 (referred to as a vertical electric field mode). Since the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction, the light from the backlight is affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to be crossed Nicols, light from the backlight passes through the substrate. Therefore, white display is performed.

Note that the state of liquid crystal molecules can be controlled by controlling voltage applied to the first electrode 50415 and the second electrode 50416. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

FIG. 42D is a schematic view of a cross section when voltage is not applied to the first electrode 50415 and the second electrode 50416. Since the liquid crystal molecules are arranged side by side along the rubbing direction, the light from the backlight is not affected by the birefringence of the liquid crystal molecules. Since the first polarizing plate 50413 and the second polarizing plate 50414 are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate. Therefore, black display is performed. This is a so-called normally black mode.

The liquid crystal display device having the structure illustrated in FIGS. 42C and 42D can perform full-color display by being provided with a color filter. The color filter can be provided on the first substrate 50411 side or the second substrate 50412 side.

As the liquid crystal material used for the FFS mode, a known material may be used.

Next, various liquid crystal modes will be described with reference to top views.

FIG. 43 is a top view of a pixel portion to which the MVA mode is applied. The MVA mode is a method for mutually compensating the viewing angle dependency of each part.

43 shows a first pixel electrode 50501, a second pixel electrode (50502a, 50502b,
50502c) and protrusions 50503. The first pixel electrode 50501 is formed on the entire surface of the counter substrate. The second pixel electrode (505) so that the shape is a square shape.
02a, 50502b, 50502c) are formed. The shape of the second pixel electrode (50
502a, 50502b, 50502c) corresponding to the first pixel electrode 50501.
Second pixel electrodes (50502a, 50502b, 50502c) are formed thereon.

The opening of the second pixel electrode (50502a, 50502b, 50502c) functions like a protrusion.

The first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5050
When a voltage is applied to 2c) (referred to as a vertical electric field method), the liquid crystal molecules are transferred to the second pixel electrode (50
502a, 50502b, 50502c) and the protrusion 50503 are in a state of being tilted and arranged. When the pair of polarizing plates are arranged to be crossed Nicols,
Since the light from the backlight passes through the substrate, white display is performed.

Note that the first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5
By controlling the voltage applied to 0502c), the state of the liquid crystal molecules can be controlled. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

The first pixel electrode 50501 and the second pixel electrode (50502a, 50502b, 5050
When no voltage is applied to 2c), the liquid crystal molecules are aligned vertically. When the pair of polarizing plates are arranged so as to be crossed Nicols, light from the backlight does not pass through the panel, so that black display is performed. This is a so-called normally black mode.

As the liquid crystal material used for the MVA mode, a known material may be used.

44A, 44B, 44C, and 44D are top views of a pixel portion to which the IPS mode is applied. The IPS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate, and the electrode is only on one substrate side. The provided horizontal electric field method is adopted.

In the IPS mode, the pair of electrodes are formed to have different shapes.

FIG. 44A illustrates a first pixel electrode 50601 and a second pixel electrode 50602. The first pixel electrode 50601 and the second pixel electrode 50602 have a wave shape.

FIG. 44B illustrates a first pixel electrode 50611 and a second pixel electrode 50612. The first pixel electrode 50611 and the second pixel electrode 50612 have a shape having concentric openings.

FIG. 44C illustrates a first pixel electrode 50631 and a second pixel electrode 50632. The first pixel electrode 50631 and the second pixel electrode 50632 have a comb-like shape and are partially overlapped with each other.

FIG. 44D illustrates a first pixel electrode 50641 and a second pixel electrode 50642. The first pixel electrode 50641 and the second pixel electrode 50642 are comb-like and have a shape in which the electrodes are engaged with each other.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50
602, 50612, 50622, and 50632) are applied with a voltage (referred to as a vertical electric field method), the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction. When the pair of polarizing plates are arranged so as to be in crossed Nicols, white light is displayed because light from the backlight passes through the substrate.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50601, 50611, 50621, 50631) and the second electrode (50602, 50612, 50622, 50632). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

The first electrode (50601, 50611, 50621, 50631) and the second electrode (50
When no voltage is applied to 602, 50612, 50622, 50632), the liquid crystal molecules are arranged side by side along the rubbing direction. When the pair of polarizing plates are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate, so that black display is performed. It is a so-called normally black mode.

As the liquid crystal material used for the IPS mode, a known material may be used.

45A, 45B, 45C, and 45D are top views of a pixel portion to which the FFS mode is applied. The FFS mode is a mode in which the alignment of liquid crystal molecules forms an optically compensated state in the liquid crystal layer, so that the liquid crystal molecules are always rotated in a plane with respect to the substrate, and the electrode is only on one substrate side. The provided horizontal electric field method is adopted.

In the FFS mode, the first electrode is formed on the upper surface of the second electrode so as to have various shapes.

FIG. 45A illustrates a first pixel electrode 50701 and a second pixel electrode 50702. The first pixel electrode 50701 has a dogleg shape. Second pixel electrode 50702
The pattern may not be formed.

FIG. 45B shows a first pixel electrode 50711 and a second pixel electrode 50712. The first pixel electrode 50711 has a concentric shape. The second pixel electrode 50712 is
The pattern may not be formed.

FIG. 45C illustrates a first pixel electrode 50731 and a second pixel electrode 50732. The first pixel electrode 50731 is comb-shaped and has a shape such that the electrodes mesh with each other. The second pixel electrode 50732 may not be patterned.

FIG. 45D illustrates a first pixel electrode 50741 and a second pixel electrode 50742. The first pixel electrode 50741 has a comb-like shape. The second pixel electrode 50742 may not be patterned.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50
702, 50712, 50722, and 50732) (referred to as a vertical electric field method), the liquid crystal molecules are aligned along the lines of electric force deviated from the rubbing direction. When the pair of polarizing plates are arranged so as to be in crossed Nicols, white light is displayed because light from the backlight passes through the substrate.

Note that the state of liquid crystal molecules can be controlled by controlling the voltage applied to the first electrode (50701, 50711, 50721, 50731) and the second electrode (50702, 50712, 50722, 50732). is there. Therefore, since the amount of light from the backlight passing through the substrate can be controlled, a predetermined video display can be performed.

The first electrode (50701, 50711, 50721, 50731) and the second electrode (50
702, 50712, 50722, and 50732), liquid crystal molecules are arranged side by side along the rubbing direction. When the pair of polarizing plates are arranged so as to be crossed Nicols, light from the backlight does not pass through the substrate, so that black display is performed. It is a so-called normally black mode.

As the liquid crystal material used for the IPS mode, a known material may be used.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 10)
In this embodiment, a pixel structure of a display device will be described. In particular, a pixel structure of a display device using an organic EL element will be described.

FIG. 46A is an example of a top view (layout diagram) of a pixel having two transistors in one pixel. FIG. 46B is an example of a cross-sectional view taken along the line XX ′ illustrated in FIG.

FIG. 46A illustrates a first transistor 60105, a first wiring 60106, and a second wiring 6
0107, the second transistor 60108, the third wiring 60111, the counter electrode 60112
, Capacitor 60113, pixel electrode 60115, partition wall 60116, organic conductor film 6011
7 shows an organic thin film 60118 and a substrate 60119. The first transistor 6
0105 is a switching transistor, the first wiring 60106 is a gate signal line, the second wiring 60107 is a source signal line, the second transistor 60108 is a driving transistor, and the third wiring 60111 is a current supply line. Are preferably used respectively.

The gate electrode of the first transistor 60105 is electrically connected to the first wiring 60106, one of the source electrode and the drain electrode of the first transistor 60105 is electrically connected to the second wiring 60107, and The other of the source electrode and the drain electrode of one transistor 60105 is a gate electrode of the second transistor 60108 and a capacitor 60113
Is electrically connected to one of the electrodes. Note that the gate electrode of the first transistor 60105 includes a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60105 can be reduced.

One of the source electrode and the drain electrode of the second transistor 60108 is connected to the third wiring 60.
111, and the other of the source electrode and the drain electrode of the second transistor 60108 is electrically connected to the pixel electrode 60115. Accordingly, the current flowing through the pixel electrode 60115 can be controlled by the second transistor 60108.

An organic conductor film 60117 is provided on the pixel electrode 60115, and the organic thin film 601 is further provided.
18 (organic compound layer) is provided. On the organic thin film 60118 (organic compound layer),
A counter electrode 60112 is provided. Note that the counter electrode 60112 may be formed on the entire surface so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60118 (organic compound layer) is transmitted through either the pixel electrode 60115 or the counter electrode 60112.

In FIG. 46B, the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is called bottom emission, and the case where light is emitted to the counter electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60115 is preferably formed using a transparent conductive film.
Conversely, in the case of top emission, the counter electrode 60112 is preferably formed using a transparent conductive film.

In a light emitting device for color display, EL elements having emission colors of R, G, and B may be applied separately, or may be applied so that a single color EL element is formed on the entire surface, and R, G, B light emission may be obtained.

The configuration illustrated in FIG. 46 is merely an example, and various configurations other than the configuration illustrated in FIG. 46 can be taken with respect to the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. For the light emitting layer, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used in addition to the element composed of the illustrated organic thin film.

FIG. 47A is an example of a top view (layout diagram) of a pixel having three transistors in one pixel. FIG. 47B is an example of a cross-sectional view taken along the line XX ′ shown in FIG.

FIG. 47A illustrates a substrate 60200, a first wiring 60201, a second wiring 60202, a third wiring
Wiring 60203, fourth wiring 60204, first transistor 60205, second transistor 60206, third transistor 60207, pixel electrode 60208, partition 602
11 shows an organic conductor film 60212, an organic thin film 60213, and a counter electrode 60214. Note that the first wiring 60201 is a source signal line, the second wiring 60202 is a writing gate signal line, the third wiring 60203 is an erasing gate signal line, and a fourth wiring 6020 is used.
4 is used as a current supply line, the first transistor 60205 is used as a switching transistor, the second transistor 60206 is used as an erasing transistor, and the third transistor 60207 is preferably used as a driving transistor.

The gate electrode of the first transistor 60205 is electrically connected to the second wiring 60202, and one of the source electrode and the drain electrode of the first transistor 60205 is electrically connected to the first wiring 60201, and The other of the source electrode and the drain electrode of one transistor 60205 is electrically connected to the gate electrode of the third transistor 60207. Note that the gate electrode of the first transistor 60205 includes a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60205 can be reduced.

The gate electrode of the second transistor 60206 is electrically connected to the third wiring 60203, and one of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the fourth wiring 60204, and The other of the source electrode and the drain electrode of the second transistor 60206 is electrically connected to the gate electrode of the third transistor 60207. Note that the gate electrode of the second transistor 60206 includes a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60206 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60207 is connected to the fourth wiring 60.
204, and the other of the source electrode and the drain electrode of the third transistor 60207 is electrically connected to the pixel electrode 60208. Thus, the current flowing through the pixel electrode 60208 can be controlled by the third transistor 60207.

An organic conductor film 60212 is provided on the pixel electrode 60208, and an organic thin film 602 is further provided.
13 (organic compound layer) is provided. On the organic thin film 60213 (organic compound layer),
A counter electrode 60214 is provided. Note that the counter electrode 60214 may be formed on the entire surface so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60213 (organic compound layer) is transmitted through either the pixel electrode 60208 or the counter electrode 60214.

In FIG. 47B, the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is called bottom emission, and the case where light is emitted to the counter electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60208 is preferably formed using a transparent conductive film.
Conversely, in the case of top emission, the counter electrode 60214 is preferably formed using a transparent conductive film.

In a light emitting device for color display, EL elements having emission colors of R, G, and B may be applied separately, or may be applied so that a single color EL element is formed on the entire surface, and R, G, B light emission may be obtained.

Note that the configuration illustrated in FIG. 47 is merely an example, and various configurations other than the configuration illustrated in FIG. 47 can be taken with respect to the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. For the light emitting layer, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used in addition to the element composed of the illustrated organic thin film.

FIG. 48A is an example of a top view (layout diagram) of a pixel having four transistors in one pixel. FIG. 48B is an example of a cross-sectional view taken along the line XX ′ shown in FIG.

FIG. 48A shows a substrate 60300, a first wiring 60301, a second wiring 60302, a third wiring
Wiring 60303, fourth wiring 60304, first transistor 60305, second transistor 60306, third transistor 60307, fourth transistor 60308,
Pixel electrode 60309, fifth wiring 60311, sixth wiring 60312, partition wall 60321,
An organic conductor film 60322, an organic thin film 60323, and a counter electrode 60324 are shown. Note that the first wiring 60301 is a source signal line, the second wiring 60302 is a writing gate signal line, the third wiring 60303 is an erasing gate signal line, and a fourth wiring 6030 is used.
4 is a reverse bias signal line, the first transistor 60305 is a switching transistor, the second transistor 60306 is an erasing transistor, the third transistor 60307 is a driving transistor, and the fourth transistor 60308 is reverse. As the direction bias transistor, the fifth wiring 60311 is used as a current supply line.
The wirings 60312 are preferably used as power supply lines for reverse bias.

The gate electrode of the first transistor 60305 is electrically connected to the second wiring 60302, and one of the source electrode and the drain electrode of the first transistor 60305 is electrically connected to the first wiring 60301, and The other of the source electrode and the drain electrode of one transistor 60305 is electrically connected to the gate electrode of the third transistor 60307. Note that the gate electrode of the first transistor 60305 includes a plurality of gate electrodes. Thus, leakage current in the off state of the first transistor 60305 can be reduced.

The gate electrode of the second transistor 60306 is electrically connected to the third wiring 60303. One of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the fifth wiring 60311. The other of the source electrode and the drain electrode of the second transistor 60306 is electrically connected to the gate electrode of the third transistor 60307. Note that the gate electrode of the second transistor 60306 includes a plurality of gate electrodes. Thus, leakage current in the off state of the second transistor 60306 can be reduced.

One of the source electrode and the drain electrode of the third transistor 60307 is connected to the fifth wiring 60.
The other of the source electrode and the drain electrode of the third transistor 60307 is electrically connected to the pixel electrode 60309. Thus, the current flowing through the pixel electrode 60309 can be controlled by the third transistor 60307.

A gate electrode of the fourth transistor 60308 is electrically connected to the fourth wiring 60304. One of a source electrode and a drain electrode of the fourth transistor 60308 is electrically connected to the sixth wiring 60312, and The other of the source electrode and the drain electrode of the fourth transistor 60308 is electrically connected to the pixel electrode 60309. In this manner, the potential of the pixel electrode 60309 can be controlled by the fourth transistor 60308, and thus a reverse bias can be applied to the organic conductor film 60322 and the organic thin film 60323. By applying a reverse bias to a light-emitting element including the organic conductor film 60322, the organic thin film 60323, and the like, the reliability of the light-emitting element can be greatly improved.

An organic conductor film 60322 is provided on the pixel electrode 60309, and an organic thin film 603 is further provided.
23 (organic compound layer) is provided. On the organic thin film 60323 (organic compound layer),
A counter electrode 60324 is provided. Note that the counter electrode 60324 may be formed on the entire surface so as to be commonly connected to all the pixels, or may be patterned using a shadow mask or the like.

Light emitted from the organic thin film 60323 (organic compound layer) is transmitted through either the pixel electrode 60309 or the counter electrode 60324.

In FIG. 48B, the case where light is emitted to the pixel electrode side, that is, the side where a transistor or the like is formed is called bottom emission, and the case where light is emitted to the counter electrode side is called top emission.

In the case of bottom emission, the pixel electrode 60309 is preferably formed using a transparent conductive film.
On the other hand, in the case of top emission, the counter electrode 60324 is preferably formed using a transparent conductive film.

In a light emitting device for color display, EL elements having emission colors of R, G, and B may be applied separately, or may be applied so that a single color EL element is formed on the entire surface, and R, G, B light emission may be obtained.

Note that the configuration illustrated in FIG. 48 is merely an example, and various configurations other than the configuration illustrated in FIG. 48 can be taken with respect to the pixel layout, the cross-sectional configuration, the stacking order of the electrodes of the EL element, and the like. For the light emitting layer, various elements such as a crystalline element such as an LED and an element composed of an inorganic thin film can be used in addition to the element composed of the illustrated organic thin film.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 11)
In this embodiment mode, a structure and operation of a pixel of a display device are described.

49A and 49B are timing charts showing an example of digital time grayscale driving. The timing chart in FIG. 49A shows a driving method in the case where a signal writing period (address period) to a pixel and a light emission period (sustain period) are separated.

Note that a period for completely displaying an image for one display area is referred to as one frame period. One frame period has a plurality of subframe periods, and one subframe period has an address period and a sustain period. The address periods Ta1 to Ta4 indicate the time required for signal writing to pixels for all rows, and the periods Tb1 to Tb4 indicate the time required for signal writing to pixels for one row (or for one pixel). The sustain periods Ts1 to Ts4 indicate the time during which the lighting or non-lighting state is maintained according to the video signal written to the pixels, and the ratio of the lengths is expressed as Ts
1: Ts2: Ts3: Ts4 = 2 ³ : 2 ² : 2 ¹ : 2 ⁰ = 8: 4: 2: 1. The gradation is expressed by the sustain period during which light is emitted.

The operation will be described. First, in the address period Ta1, pixel selection signals are input to the scanning lines in order from the first row, and pixels are selected. When a pixel is selected, a video signal is input from the signal line to the pixel. When a video signal is written to the pixel, the pixel holds the signal until the signal is input again. Lighting and non-lighting of each pixel in the sustain period Ts1 are controlled by the written video signal. Similarly, video signals are input to the pixels in the address periods Ta2, Ta3, and Ta4, and lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signals. In each subframe period, the pixel is not lit during the address period, and after the address period ends, the sustain period starts, and the pixel in which a signal for lighting is written is lit.

Here, with reference to FIG. 49B, description will be given focusing on the i-th pixel row. First, in the address period Ta1, pixel selection signals are sequentially input to the scanning lines from the first row, and the address period T
The pixel in the i-th row is selected in the period Tb1 (i) among a1. Then, when the i-th row pixel is selected, a video signal is input from the signal line to the i-th row pixel. And
When a video signal is written to the i-th row pixel, the i-th row pixel holds the signal until the signal is input again. Lighting and non-lighting of the i-th row pixel in the sustain period Ts1 are controlled by the written video signal. Similarly, address periods Ta2, Ta3, T
In a4, a video signal is input to the pixel in the i-th row, and lighting and non-lighting of the pixel in the i-th row in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signal. In each subframe period, the pixel is not lit during the address period, and after the address period ends, the sustain period starts, and the pixel in which a signal for lighting is written is lit.

Although the case where a 4-bit gradation is expressed has been described here, the number of bits and the number of gradations are not limited thereto. Note that the order of lighting does not have to be Ts1, Ts2, Ts3, and Ts4, and may be random or may be divided into a plurality of light sources. Ts1, Ts2
, Ts3 and Ts4 do not need to be a power of 2, but may be the same length of lighting time or may be slightly shifted from a power of 2.

Next, a driving method in the case where the signal writing period (address period) to the pixel and the light emission period (sustain period) are not separated will be described. That is, the pixel in the row where the video signal writing operation is completed holds the signal until the signal is written (or erased) to the pixel next time. A period from writing operation to next signal writing to this pixel is referred to as data holding time. During this data retention time, the pixel is turned on or off according to the video signal written to the pixel. The same operation is performed up to the last line, and the address period ends. Then, the signal writing operation in the next subframe period is started in order from the row where the data holding time has ended.

As described above, when the signal writing operation is completed and the data holding time is reached, in the driving method in which the pixel is turned on or off in accordance with the video signal written to the pixel immediately, the data holding time is attempted to be shorter than the address period. However, since signals cannot be input to two rows at the same time, it is necessary to prevent the address periods from overlapping, and therefore the data holding time cannot be shortened. As a result, it becomes difficult to perform high gradation display.

Therefore, a data holding time shorter than the address period is set by providing an erasing period. A driving method in the case where an erasing period is provided and a data holding time shorter than the address period is set will be described with reference to FIG.

First, in the address period Ta1, pixel scanning signals are input to the scanning lines in order from the first row,
A pixel is selected. When a pixel is selected, a video signal is input from the signal line to the pixel. When a video signal is written to the pixel, the pixel holds the signal until the signal is input again. The sustain period Ts1 is determined by the written video signal.
The lighting and non-lighting of each pixel in are controlled. In the row where the video signal writing operation is completed, the pixels are turned on or off in accordance with the video signal written immediately. The same operation is performed up to the last row, and the address period Ta1 ends. Then, the signal writing operation in the next subframe period is started in order from the row where the data holding time has ended. Similarly, video signals are input to the pixels in the address periods Ta2, Ta3, and Ta4, and lighting and non-lighting of each pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signals. The end of the sustain period TS4 is set by the start of the erase operation. This is because if the signal written to the pixel is erased at the erase time Te of each row, the signal is forced regardless of the video signal written to the pixel in the address period until the signal is written to the next pixel. This is because the light is not turned on. That is, the data holding time ends from the pixel in the row where the erasing time Te has started.

Here, the i-th pixel row will be described with reference to FIG. In the i-th pixel row, in the address period Ta1, pixel scanning signals are sequentially input to the scanning lines from the first row, and pixels are selected. Then, when the i-th row pixel is selected in the period Tb1 (i), a video signal is input to the i-th row pixel. When a video signal is written to the i-th row pixel, the i-th row pixel holds the signal until the signal is input again. By the written video signal, lighting and non-lighting of the pixel in the i-th row in the sustain period Ts1 (i) are controlled. That is, when the video signal writing operation is completed in the i-th row,
In accordance with the video signal immediately written, the pixels in the i-th row are turned on or off. Similarly, a video signal is input to the i-th row pixel in the address periods Ta2, Ta3, and Ta4, and lighting and non-lighting of the i-th row pixel in the sustain periods Ts2, Ts3, and Ts4 are controlled by the video signal. The end of the sustain period Ts4 (i) is set by starting the erase operation. This is because the light is forcibly turned off regardless of the video signal written to the pixel in the i-th row during the erasing time Ts (i) in the i-th row. That is, when the erasing time Te (i) starts, the data holding time of the pixel in the i-th row ends.

Therefore, it is possible to provide a display device with a high gradation and a high duty ratio (ratio of lighting period in one frame period) shorter than the address period without separating the address period and the sustain period. Since the instantaneous luminance can be lowered, the reliability of the display element can be improved.

Although the case where a 4-bit gradation is expressed has been described here, the number of bits and the number of gradations are not limited thereto. Further, the lighting order need not be Ts1, Ts2, Ts3, and Ts4, and may be random or may be divided into a plurality of light emission. Ts1, Ts2,
The lighting times of Ts3 and Ts4 do not need to be a power of 2, but may be the same lighting time, or may be slightly shifted from the power of 2.

A structure and operation of a pixel to which digital time gray scale driving can be applied will be described.

FIG. 51 is a diagram illustrating an example of a pixel configuration to which digital time gray scale driving can be applied.

The pixel 80300 includes a switching transistor 80301 and a driving transistor 803.
02, a light emitting element 80304 and a capacitor 80303 are provided. The switching transistor 80301 has a gate connected to the scanning line 80306, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 80305, and a second electrode (the other of the source electrode and the drain electrode) connected to the driving transistor. It is connected to the gate of 80302. The driving transistor 80302 has a gate connected to the power supply line 80307 through the capacitor 80303, a first electrode connected to the power supply line 80307, and a second electrode connected to the first electrode of the light emitting element 80304 (
Pixel electrode). The second electrode of the light emitting element 80304 corresponds to the common electrode 80308.

Note that a low power supply potential is set for the second electrode (the common electrode 80308) of the light-emitting element 80304. Note that the low power supply potential is a potential that satisfies the low power supply potential <the high power supply potential with reference to the high power supply potential set in the power supply line 80307. For example, GND, 0V, or the like is set as the low power supply potential. Also good. The potential difference between the high power supply potential and the low power supply potential is expressed as the light emitting element 8030.
4, current is passed through the light emitting element 80304 to cause the light emitting element 80304 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80304. Set the potential.

Note that the capacitor 80303 can be omitted by using the gate capacitance of the driving transistor 80302 instead. With respect to the gate capacitance of the driving transistor 80302, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two.

When a pixel is selected by the scanning line 80306, that is, the switching transistor 80
When 301 is on, a video signal is input from the signal line 80305 to the pixel.
Then, charge for a voltage corresponding to the video signal is accumulated in the capacitor 80303, and the capacitor 80303 holds the voltage. This voltage is a voltage between the gate of the driving transistor 80302 and the first electrode, and corresponds to a gate-source voltage Vgs of the driving transistor 80302.

In general, the operation region of a transistor can be divided into a linear region and a saturation region. The boundary is when (Vgs−Vth) = Vds, where Vds is the drain-source voltage, Vgs is the gate-source voltage, and Vth is the threshold voltage. (Vgs−Vth)> Vd
The case of s is a linear region, and the current value is determined by the magnitudes of Vds and Vgs. on the other hand,
When (Vgs−Vth) <Vds, a saturation region is reached. Ideally, even when Vds changes, the current value hardly changes. That is, the current value is determined only by the magnitude of Vgs.

Here, in the case of the voltage input voltage driving method, a video signal is input to the gate of the driving transistor 80302 so that the driving transistor 80302 is sufficiently turned on or off. That is, the driving transistor 80302 is operated in a linear region.

Therefore, in the case of a video signal in which the driving transistor 80302 is turned on, ideally, the power supply potential VDD set to the power supply line 80307 is set to the first electrode of the light emitting element 80304 as it is.

That is, ideally, the voltage applied to the light emitting element 80304 is made constant, and the light emitting element 80304 is used.
The luminance obtained from is made constant. A plurality of subframe periods are provided within one frame period, video signals are written to the pixels for each subframe period, and lighting or non-lighting of the pixels is controlled for each subframe period. Depending on the total subframe period,
Express gradation.

Note that when a video signal that causes the driving transistor 80302 to operate in a saturation region is input, a current can flow through the light-emitting element 80304. If the light-emitting element 80304 is an element that determines luminance in accordance with current, reduction in luminance due to deterioration of the light-emitting element 80304 can be suppressed. Further, by making the video signal analog, a light emitting element 8030 is obtained.
4 can be supplied with a current corresponding to the video signal. In this case, analog gradation driving can be performed.

FIG. 52 is a diagram illustrating an example of a pixel configuration to which digital time gray scale driving can be applied.

The pixel 80400 includes a switching transistor 80401 and a driving transistor 804.
02, a capacitor 80403, a light emitting element 80404, and a rectifying element 80409.
The switching transistor 80401 has a gate connected to the second scan line 80406,
The first electrode (one of the source electrode and the drain electrode) is connected to the signal line 80405, and the second electrode (the other of the source electrode and the drain electrode) is connected to the gate of the driving transistor 80402. The driving transistor 80402 has a gate connected to the power supply line 80407 through the capacitor 80403, and a gate connected to the second scanning line 804 through the rectifier 80309.
10, the first electrode is connected to the power supply line 80407, and the second electrode is the light emitting element 8040.
4 first electrodes (pixel electrodes). The second electrode of the light emitting element 80404 corresponds to the common electrode 80408.

Note that a low power supply potential is set for the second electrode (the common electrode 80408) of the light-emitting element 80404. Note that the low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80407. For example, GND, 0V, or the like is set as the low power supply potential. Also good. The potential difference between the high power supply potential and the low power supply potential is expressed as the light emitting element 8040.
4, current is passed through the light emitting element 80404 to cause the light emitting element 80404 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80404. Set the potential.

Note that the capacitor 80403 can be omitted by using the gate capacitor of the driving transistor 80402 instead. As for the gate capacitance of the driving transistor 80402, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two.

Note that a diode-connected transistor can be used as the rectifying element 80409. Besides a diode-connected transistor, a PN junction diode, a PIN junction diode, a Schottky diode, or a diode formed of carbon nanotubes may be used. The polarity of the diode-connected transistor may be an N-channel type or a P-channel type.

A pixel 80400 includes a rectifier element 80409 and a second scan line 8041 in addition to the pixel shown in FIG.
0 is added. Therefore, the switching transistor 80401 shown in FIG.
, Driving transistor 80402, capacitor element 80403, light emitting element 80404, signal line 8
Reference numeral 0405, the first scanning line 80406, the power supply line 80407, and the common electrode 80408 are the switching transistor 80301 and the driving transistor 803 shown in FIG.
02, a capacitor element 80303, a light emitting element 80304, a signal line 80305, a scanning line 80306
, Corresponding to the power supply line 80307 and the common electrode 80308. Therefore, the writing operation and the light emitting operation in FIG. 52 are the same as the writing operation and the light emitting operation described in FIG.

The erase operation will be described. At the time of erasing operation, an H level signal is input to the second scan line 80410. Then, current flows through the rectifying element 80409, and the gate potential of the driving transistor 80402 held by the capacitor 80403 can be set to a certain potential. In other words, the gate potential of the driving transistor 80402 can be set to a certain potential, and the driving transistor 80402 can be forcibly turned off regardless of the video signal written to the pixel.

Note that the L-level signal input to the second scan line 80410 is set to a potential such that no current flows through the rectifier element 80409 when a non-lighting video signal is written to the pixel.
The H level signal input to the second scan line 80410 is set to a potential at which the gate transistor 80402 can be turned off regardless of the video signal written to the pixel.

FIG. 53 is a diagram illustrating an example of a pixel configuration to which digital time gray scale driving can be applied.

The pixel 80500 includes a switching transistor 80501 and a driving transistor 805.
02, a capacitor 80503, a light emitting element 80504, and an erasing transistor 80509. The switching transistor 80501 has a gate connected to the second scan line 80506, a first electrode (one of the source electrode and the drain electrode) connected to the signal line 80505, and a second electrode (the other of the source electrode and the drain electrode) The gate of the driving transistor 80502 is connected. The driving transistor 80502 has a gate that has a capacitor 8050.
3 is connected to the power supply line 80507 through the first gate of the erasing transistor 80509.
The first electrode is connected to the power supply line 80507, and the second electrode is connected to the light emitting element 8050.
4 first electrodes (pixel electrodes). The erasing transistor has a gate connected to the second scan line 80510 and a second electrode connected to the power supply line 80507. Light emitting element 8
The second electrode 0504 corresponds to the common electrode 80508.

Note that a low power supply potential is set for the second electrode (the common electrode 80508) of the light-emitting element 80504. Note that the low power supply potential is a potential that satisfies the low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80507. For example, GND, 0V, or the like is set as the low power supply potential. Also good. The potential difference between the high power supply potential and the low power supply potential is expressed as the light emitting element 8050.
4, current is passed through the light emitting element 80504 to cause the light emitting element 80504 to emit light, so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light emitting element 80504. Set the potential.

Note that the capacitor 80503 can be omitted by using the gate capacitor of the driving transistor 80502 instead. As for the gate capacitance of the driving transistor 80502, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two.

A pixel 80500 is obtained by adding an erasing transistor 80509 and a second scanning line 80510 to the pixel shown in FIG. Therefore, the switching transistor 80501, the driving transistor 80502, the capacitor 80503, and the light-emitting element 80504 illustrated in FIG.
, Signal line 80505, first scan line 80506, power supply line 80507, and common electrode 8050
8 corresponds to the switching transistor 80301, the driving transistor 80302, the capacitor 80303, the light emitting element 80304, the signal line 80305, the scanning line 80306, the power supply line 80307, and the common electrode 80308 shown in FIG. Therefore, FIG.
Since the writing operation and the light emitting operation are the same as the writing operation and the light emitting operation described with reference to FIG. 51, the description thereof is omitted.

The erase operation will be described. At the time of erasing operation, an H level signal is input to the second scan line 80510. Then, the erasing transistor 80509 is turned on, so that the gate of the driving transistor and the first electrode can be set to the same potential. That is, the driving transistor 80502
Vgs can be set to 0V. Thus, the driving transistor 80502 can be forcibly turned off.

A configuration and operation of a pixel called a threshold voltage correction type will be described. The threshold voltage correction type pixel can be applied to digital time gray scale driving and analog gray scale driving.

FIG. 54 is a diagram illustrating an example of a configuration of a pixel called a threshold voltage correction type.

The pixel shown in FIG. 54 includes a driving transistor 80600, a first switch 80601, a second switch
Switch 80602, third switch 80603, first capacitor element 80604, second capacitor element 80605, and light-emitting element 80620. Driving transistor 8060
The 0 gate is connected to the signal line 80611 through the first capacitor 80604 and the first switch 80601 in this order. A gate of the driving transistor 80600 is connected to the power supply line 80612 through the second capacitor element 80605. Driving transistor 80
The first electrode 600 is connected to the power supply line 80612. Driving transistor 8060
The second electrode of 0 is connected to the first electrode of the light emitting element 80620 through the third switch 80603. The second electrode of the driving transistor 80600 is connected to the second switch 8060.
2 is connected to the gate of the driving transistor 80600 through 2. Light emitting element 8062
The second electrode of 0 corresponds to the common electrode 80621.

A low power supply potential is set for the second electrode of the light-emitting element 80620. Note that the low power supply potential is a potential that satisfies the low power supply potential <the high power supply potential with reference to the high power supply potential set in the power supply line 80612. For example, GND, 0V, or the like is set as the low power supply potential. Also good.
A potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80620, so that the light emitting element 80
In order to cause the light-emitting element 80620 to emit light by passing a current through 620, each potential is set so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light-emitting element 80620. Note that the second capacitor element 80605 can be omitted instead of the gate capacitor of the driving transistor 80600. As for the gate capacitance of the driving transistor 80600, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two. Note that the first switch 80601, the second switch 80602, and the third switch 80603 are controlled to be turned on and off by a first scan line 80613, a second scan line 80614, and a third scan line 80614, respectively. .

The pixel driving method illustrated in FIG. 54 is described by dividing the operation period into an initialization period, a data writing period, a threshold value acquisition period, and a light emission period.

In the initialization period, the second switch 80602 and the third switch 80603 are turned on.
Then, the gate potential of the driving transistor 80600 is at least lower than the potential of the power supply line 80612. At this time, the first switch 80601 may be on or off. Note that the initialization period is not necessarily required.

In the threshold acquisition period, a pixel is selected by the first scan line 80613. That is, the first switch 80601 is turned on and a certain voltage is input from the signal line 80611. At this time, the second switch 80602 is turned on and the third switch 80603 is turned off. Accordingly, the driving transistor 80600 is diode-connected, and the second electrode and the gate of the driving transistor 80600 are in a floating state (floating state). And
The gate potential of the driving transistor 80600 is a value obtained by subtracting the threshold voltage of the driving transistor 80600 from the potential of the power supply line 80612. Therefore, the first capacitor element 806
04 holds the threshold voltage of the driving transistor 80600. Second capacitive element 8
In 0605, a potential difference between the gate potential of the driving transistor 80600 and a constant voltage input from the signal line 80611 is held.

In the data writing period, a video signal (voltage) is input from the signal line 80611. At this time, the first switch 80601 remains on, the second switch 80602 turns off, and the third switch 80603 remains off. Then, the driving transistor 806
Since the gate of 00 is in a floating state (floating state), the gate potential of the driving transistor 80600 is a constant voltage input to the signal line 80611 in the threshold value acquisition period and the signal line 80611 input in the data writing period. It changes according to the potential difference with the video signal. For example, the capacitance value of the first capacitor element 80604 << the second capacitor element 8
If the capacitance value is 0605, the driving transistor 80600 in the data writing period
The threshold potential of the driving transistor 80600 is determined from the potential of the signal line 80611 in the threshold acquisition period and the potential and potential difference (change amount) of the signal line 80611 in the data writing period and the potential of the power supply line 80612. Is approximately equal to the sum of the value minus.
That is, the potential of the gate of the driving transistor 80600 is equal to that of the driving transistor 8060.
A potential obtained by correcting the threshold voltage of 0 is obtained.

In the light emission period, the potential difference between the gate of the driving transistor 80600 and the power supply line 80612 (
A current corresponding to Vgs) flows to the light emitting element 80620. At this time, the first switch 806
01 turns off, the second switch 80602 remains off, and the third switch 8060
3 turns on. Note that a current flowing through the light-emitting element 80620 is a driving transistor 8060.
It is constant regardless of the threshold voltage of 0.

Note that the pixel structure illustrated in FIG. 54 is not limited thereto. For example, a switch, a resistor, a capacitor, a transistor, a logic circuit, or the like may be newly added to the pixel illustrated in FIG. For example, the second switch 80602 includes a P-channel transistor or an N-channel transistor, the third switch 80603 includes a transistor having a polarity different from that of the second switch 80602, and the second switch 80602 and The third switch 80603 may be controlled by the same scanning line.

A structure and operation of a pixel called a current input type will be described. The current input positive type pixel can be applied to digital gradation driving and analog gradation driving.

FIG. 55 is a diagram illustrating an example of a configuration of a pixel called a current input type.

The pixel shown in FIG. 55 includes a driving transistor 80700, a first switch 80701, a second switch
Switch 80702, third switch 80703, capacitor 80704, and light-emitting element 8
0730. The gate of the driving transistor 80700 is connected to the second switch 80
702 and a first switch 80701 are sequentially connected to a signal line 80711.
The gate of the driving transistor 80700 is connected to the power supply line 8071 through the capacitor 80704.
2 is connected. A first electrode of the driving transistor 80700 is connected to the power supply line 80712. The second electrode of the driving transistor 80700 is connected to the first switch 8070.
1 to the power supply line 80712. The second electrode of the driving transistor 80700 is connected to the first electrode of the light-emitting element 80730 through the third switch 80703. The second electrode of the light-emitting element 80730 corresponds to the common electrode 80731.

A low power supply potential is set for the second electrode of the light-emitting element 80730. Note that the low power supply potential is a potential that satisfies a low power supply potential <high power supply potential with reference to the high power supply potential set in the power supply line 80712. For example, GND, 0V, or the like is set as the low power supply potential. Also good.
A potential difference between the high power supply potential and the low power supply potential is applied to the light emitting element 80730, so that the light emitting element 80
In order to cause the light-emitting element 80730 to emit light by causing a current to flow through 730, each potential is set so that the potential difference between the high power supply potential and the low power supply potential is equal to or higher than the forward threshold voltage of the light-emitting element 80730. Note that the capacitor 80704 can be omitted instead of the gate capacitance of the driving transistor 80700. Regarding the gate capacitance of the driving transistor 80700, the capacitance may be formed in a region where the source electrode, the drain region, the LDD region, or the like overlaps with the gate electrode, or the channel region and the gate electrode. A capacitance may be formed between the two. Note that the first switch 80701, the second switch 80702, and the third switch 80703 are controlled to be turned on and off by a first scan line 80713, a second scan line 80714, and a third scan line 80734, respectively. .

The pixel driving method illustrated in FIG. 55 is described by dividing an operation period into a data writing period and a light emission period.

In the data writing period, a pixel is selected by the first scan line 80713. That means
The first switch 80701 is turned on, and a current is input as a video signal from the signal line 80711. At this time, the second switch 80702 is turned on and the third switch 80703 is turned off. Accordingly, the potential of the gate of the driving transistor 80700 becomes a potential corresponding to the video signal. That is, the capacitor 80704 holds a voltage between the gate electrode and the source electrode of the driving transistor 80700 that causes the driving transistor 80700 to pass the same current as the video signal.

Next, in the light emission period, the first switch 80701 and the second switch 80702 are turned off, and the third switch 80703 is turned on. Accordingly, a current having the same value as the video signal flows through the light emitting element 80730.

Note that the pixel structure illustrated in FIG. 55 is not limited thereto. For example, a switch, a resistor, a capacitor, a transistor, a logic circuit, or the like may be newly added to the pixel illustrated in FIG. For example, the first switch 80701 is a P-channel transistor or an N-channel transistor, the second switch 80702 is a transistor having the same polarity as the first switch 80701, and the first switch 80701 and the second switch 80701 The switch 80702 may be controlled by the same scanning line. The second switch 80702 may be disposed between the gate of the driving transistor 80700 and the signal line 80711.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 12)
In this embodiment, a structure and a manufacturing method of a transistor will be described.

FIG. 56 illustrates an example of a structure and a manufacturing method of a transistor that can be included in a semiconductor device to which the present invention can be applied. FIG. 56A illustrates an example of a structure of a transistor that can be included in a semiconductor device to which the present invention can be applied. 56B to 56G illustrate an example of a method for manufacturing a transistor that can be included in a semiconductor device to which the present invention can be applied.

Note that the structure and manufacturing method of the transistor that can be included in the semiconductor device to which the present invention can be applied are not limited to those illustrated in FIGS. 56A and 56B, and various structures and manufacturing methods can be used.

First, an example of a structure of a transistor that can be included in a semiconductor device to which the present invention can be applied will be described with reference to FIG. FIG. 56A is a cross-sectional view of a plurality of transistors having different structures. Here, in FIG. 56A, a plurality of transistors having different structures are shown side by side; this is an expression for explaining a structure of a transistor that can be included in a semiconductor device to which the invention can be applied. Thus, the transistors that can be included in the semiconductor device to which the invention can be applied do not have to be actually juxtaposed as illustrated in FIG. 56A, and can be manufactured as needed.

Next, characteristics of each layer included in a transistor that can be included in a semiconductor device to which the present invention can be applied will be described.

As the substrate 110111, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PE
N), it is also possible to use a substrate made of a synthetic resin having flexibility such as plastic or acrylic represented by polyethylene-tersulfone (PES). By using a flexible substrate, a semiconductor device that can be bent can be manufactured. In addition, as long as the substrate has flexibility, the substrate area and the shape of the substrate are not greatly limited. Therefore, as the substrate 110111, for example, a substrate having one side of 1 meter or more and a rectangular shape is used. If used, productivity can be significantly improved. Such an advantage is a great advantage compared to the case of using a circular silicon substrate.

The insulating film 110112 functions as a base film. An alkali metal or alkaline earth metal such as Na is provided from the substrate 110111 in order to prevent adverse effects on the characteristics of the semiconductor element. As the insulating film 110112, an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), or silicon nitride oxide (SiNxOy) (x> y) It is possible to provide a single layer structure or a laminated structure thereof.
For example, in the case where the insulating film 110112 is provided with a two-layer structure, a silicon nitride oxide film may be provided as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. Insulating film 110
When 112 is provided in a three-layer structure, a silicon oxynitride film is provided as a first insulating film, a silicon nitride oxide film is provided as a second insulating film, and a silicon oxynitride film is provided as a third insulating film Good.

The semiconductor layers 110113, 110114, and 110115 can be formed using an amorphous semiconductor or a semi-amorphous semiconductor (SAS). Alternatively, a polycrystalline semiconductor layer may be used. SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. At least some areas in the membrane
A crystal region of 0.5 to 20 nm can be observed. When silicon is the main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ⁻¹ . In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. As a compensation for dangling bonds (dangling bonds), hydrogen or halogen is contained at least 1 atomic% or more. The SAS is formed by glow discharge decomposition (plasma CVD) of a material gas. Examples of the material gas include SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , and SiHC.
l ₃ , SiCl ₄ , SiF ₄ or the like can be used. Alternatively, GeF ₄ may be mixed. The material gas H2, or, _{H 2} and He, Ar, Kr, may be diluted with selected one or more kinds of rare gas elements and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure is generally in the range of 0.1 Pa to 133 Pa, and the power supply frequency is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As the impurity element in the film, impurity is 1 × ¹⁰ 20 cm of atmospheric constituents, such as carbon ^- desirably set to lower than or equal to 1, in particular, oxygen concentration is 5 × ¹⁰ 19 / cm ³ or less, preferably 1 × 10 ¹⁹ / c
m ³ or less. Here, an amorphous semiconductor layer is formed using a known material (a sputtering method, an LPCVD method, a plasma CVD method, or the like) with a material (eg, SixGe1-x) containing silicon (Si) as a main component. The crystalline semiconductor layer is crystallized by a known crystallization method such as a laser crystallization method, a thermal crystallization method using an RTA or furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization.

The insulating film 110116 includes silicon oxide (SiOx), silicon nitride (SiNx), and silicon oxynitride (
A single-layer structure of an insulating film containing oxygen or nitrogen such as SiOxNy) (x> y) or silicon nitride oxide (SiNxOy) (x> y), or a stacked structure thereof can be used.

The gate electrode 110117 can have a single-layer conductive film or a stacked structure of two-layer or three-layer conductive films. As a material of the gate electrode 110117, a known conductive film can be used. For example, a simple film of an element such as tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), silicon (Si), or a nitride film of the element (typically Tantalum nitride film, tungsten nitride film, titanium nitride film), or
An alloy film combining the above elements (typically, a Mo—W alloy or a Mo—Ta alloy) or a silicide film of the above elements (typically, a tungsten silicide film or a titanium silicide film) can be used. Note that the single film, nitride film, alloy film, silicide film, and the like described above may be used as a single layer or may be stacked.

The insulating film 110118 is formed by a known means (such as sputtering or plasma CVD) by using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y).
, An insulating film containing oxygen or nitrogen such as silicon nitride oxide (SiNxOy) (x> y) or DLC (
A single-layer structure of a film containing carbon such as diamond-like carbon) or a laminated structure thereof can be used.

The insulating film 110119 is formed of siloxane resin, silicon oxide (SiOx), silicon nitride (
SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy)
(X> y) such as an insulating film having oxygen or nitrogen, a film containing carbon such as DLC (Diamond Like Carbon), or epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, acrylic, etc. A single layer or a stacked structure of an organic material can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond.
Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Note that in the semiconductor device applicable to the present invention, the insulating film 110119 can be provided directly so as to cover the gate electrode 110117 without providing the insulating film 110118.

The conductive film 110123 is made of Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, M
A single element film of an element such as n, a nitride film of the element, an alloy film combining the elements, a silicide film of the element, or the like can be used. For example, as an alloy containing a plurality of the elements, an Al alloy containing C and Ti, an Al alloy containing Ni,
An Al alloy containing C and Ni, an Al alloy containing C and Mn, or the like can be used. In the case of providing a stacked structure, a structure in which Al is sandwiched between Mo, Ti, or the like can be employed. By carrying out like this, the tolerance with respect to the heat | fever and chemical reaction of Al can be improved.

Next, characteristics of each structure will be described with reference to cross-sectional views of a plurality of transistors having different structures shown in FIG.

110101 is a single drain transistor and can be manufactured by a simple method.
There are advantages in that the manufacturing cost is low and the yield can be increased. Here, the semiconductor layer 11011
3 and 110115 have different impurity concentrations, the semiconductor layer 110113 is used as a channel region, and the semiconductor layer 110115 is used as a source region and a drain region. in this way,
The resistivity of the semiconductor layer can be controlled by controlling the amount of impurities. Further, the electrical connection state between the semiconductor layer and the conductive film 110123 can be made close to ohmic connection. In addition,
As a method of separately forming semiconductor layers having different amounts of impurities, a method of doping impurities into the semiconductor layer using the gate electrode 110117 as a mask can be used.

110102 is a transistor having a taper angle greater than or equal to a certain value in the gate electrode 110117 and can be manufactured by a simple method, and thus has an advantage of low manufacturing cost and high yield. Here, the semiconductor layers 110113, 110114, and 110115 have different impurity concentrations, the semiconductor layer 110113 is a channel region, the semiconductor layer 110114 is a lightly doped drain (LDD) region, and the semiconductor layer 110.
115 is used as a source region and a drain region. Thus, the resistivity of the semiconductor layer can be controlled by controlling the amount of impurities. Further, the electrical connection state between the semiconductor layer and the conductive film 110123 can be made close to ohmic connection. In addition, since the LDD region is included, a high electric field is hardly applied inside the transistor, and deterioration of the element due to hot carriers can be suppressed. Note that as a method of separately forming semiconductor layers having different amounts of impurities, a method of doping impurities into the semiconductor layers using the gate electrode 110117 as a mask can be used. In 110102, since the gate electrode 110117 has a certain taper angle or more, a gradient can be given to the concentration of the impurity that passes through the gate electrode 110117 and is doped into the semiconductor layer. Regions can be formed.

110103 is a transistor in which the gate electrode 110117 is composed of at least two layers, and the lower gate electrode is longer than the upper gate electrode. In this specification, the shape of the upper gate electrode and the lower gate electrode is referred to as a hat shape. Gate electrode 110
Since the shape of 117 is a hat shape, an LDD region can be formed without adding a photomask. Note that, as in 110103, the LDD region is the gate electrode 11.
The structure overlapping with 0117, especially the GOLD structure (Gate Overlapped)
LDD). Note that the following method may be used as a method of making the shape of the gate electrode 110117 into a hat shape.

First, when patterning the gate electrode 110117, the lower gate electrode and the upper gate electrode are etched by dry etching so that the side surfaces are inclined (tapered). Subsequently, the upper-layer gate electrode is processed to be nearly vertical by anisotropic etching. Thereby, a gate electrode having a hat-shaped cross section is formed. Then twice,
A semiconductor layer 1101 used as a channel region is doped by doping an impurity element.
13. A semiconductor layer 110114 used as an LDD region and a semiconductor layer 110115 used as a source electrode and a drain electrode are formed.

Note that an LDD region overlapping the gate electrode 110117 is defined as a Lov region, and the gate electrode 11.
An LDD region that does not overlap with 0117 will be referred to as a Loff region. Where Lof
The f region has a high effect of suppressing the off-current value, but has a low effect of relaxing the electric field near the drain and preventing the deterioration of the on-current value due to hot carriers. On the other hand, the Lov region relaxes the electric field near the drain and is effective in preventing deterioration of the on-current value, but has a low effect of suppressing the off-current value. Therefore, it is preferable to manufacture a transistor having a structure corresponding to a required characteristic for each of various circuits. For example, in the case where a semiconductor device that can be applied to the present invention is used as a display device, a transistor having a Loff region is preferably used as the pixel transistor in order to suppress an off-state current value. On the other hand, as the transistor in the peripheral circuit, it is preferable to use a transistor having a Lov region in order to relax the electric field in the vicinity of the drain and prevent deterioration of the on-current value.

110104 is in contact with the side surface of the gate electrode 110117 and is in contact with the side wall 110121.
A transistor having By having the side wall 110121, an area overlapping with the side wall 110121 can be an LDD area.

110105 performs LDD (Lof) by doping a semiconductor layer using a mask.
f) A transistor in which a region is formed. Thus, the LDD region can be formed reliably and the off-state current value of the transistor can be reduced.

110106 performs LDD (Lov) by doping a semiconductor layer using a mask.
) Transistor in which a region is formed. Thus, the LDD region can be formed reliably, the electric field in the vicinity of the drain of the transistor can be relaxed, and the deterioration of the on-current value can be reduced.

Next, an example of a method for manufacturing a transistor that can be included in a semiconductor device to which the present invention can be applied will be described with reference to FIGS.

Note that the structure and manufacturing method of the transistor that can be included in the semiconductor device to which the present invention can be applied are not limited to those illustrated in FIGS. 56A and 56B, and various structures and manufacturing methods can be used.

In this embodiment, the insulating film 1 is formed on the surface of the substrate 110111, on the surface of the insulating film 110112, on the surface of the semiconductor layer 110113, on the surface of 110114, and on the surface of 110115.
On the surface of 10116, on the surface of the insulating film 110118, or on the surface of the insulating film 110119,
By oxidizing or nitriding using plasma treatment, the semiconductor layer or the insulating film can be oxidized or nitrided. In this manner, the surface of the semiconductor layer or the insulating film is modified by oxidizing or nitriding the semiconductor layer or the insulating film using plasma treatment, and compared with an insulating film formed by a CVD method or a sputtering method. Since a denser insulating film can be formed, defects such as pinholes can be suppressed and characteristics and the like of the semiconductor device can be improved.

First, the surface of the substrate 110111 is cleaned using hydrofluoric acid (HF), alkali, or pure water.
As the substrate 110111, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (PE
N), it is also possible to use a plastic substrate typified by polyethersulfone (PES) or a substrate made of flexible synthetic resin such as acrylic. Here, the substrate 11
A case where a glass substrate is used as 0111 is shown.

Here, an oxide film or a nitride film may be formed on the surface of the substrate 110111 by performing plasma treatment on the surface of the substrate 110111 to oxidize or nitride the surface of the substrate 110111 (FIG. 56B). . Hereinafter, an insulating film such as an oxide film or a nitride film formed by performing plasma treatment on the surface is also referred to as a plasma treatment insulating film. In FIG. 56 (B),
The insulating film 131 is a plasma processing insulating film. In general, when a semiconductor element such as a thin film transistor is provided on a substrate such as glass or plastic, an impurity element such as alkali metal or alkaline earth metal such as Na contained in glass or plastic is mixed in the semiconductor element. Contamination may affect the characteristics of the semiconductor element. However, by nitriding the surface of a substrate made of glass or plastic, it is possible to prevent an impurity element such as an alkali metal or an alkaline earth metal such as Na contained in the substrate from entering the semiconductor element.

Note that when the surface is oxidized by plasma treatment, an oxygen atmosphere (eg, oxygen (O ₂
) And a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, oxygen and hydrogen (H ₂ ) and a rare gas atmosphere, or dinitrogen monoxide and a rare gas atmosphere. )
Plasma treatment is performed at On the other hand, when the semiconductor layer is nitrided by plasma treatment, in a nitrogen atmosphere (for example, nitrogen (N ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, or Plasma treatment is performed in an atmosphere of nitrogen, hydrogen, and a rare gas, or NH ₃ and a rare gas. As the rare gas, for example, Ar can be used. Alternatively, a gas in which Ar and Kr are mixed may be used. Therefore, the plasma processing insulating film includes a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, Ar is contained in the plasma processing insulating film.

In the plasma treatment, the electron density is 1 × 10 ¹¹ cm ⁻³ in the gas atmosphere.
1 × 10 ¹³ cm ⁻³ or less and the plasma electron temperature is 0.5 ev or more and 1.5 eV.
It is preferred to do the following. Since the electron density of the plasma is high and the electron temperature in the vicinity of the object to be processed is low, damage to the object to be processed by the plasma can be prevented. In addition, since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or higher, an oxide or a nitride film formed by oxidizing or nitriding an irradiation object using plasma treatment is a CVD process.
Compared with a film formed by a method or a sputtering method, a film having excellent uniformity in film thickness and the like can be formed. Alternatively, since the electron temperature of plasma is as low as 1 eV or less, oxidation or nitridation can be performed at a lower temperature than conventional plasma treatment or thermal oxidation. For example, even if the plasma treatment is performed at a temperature that is 100 degrees or more lower than the strain point temperature of the glass substrate, the oxidation or nitriding treatment can be sufficiently performed. Note that a high frequency such as a microwave (2.45 GHz) can be used as a frequency for forming plasma. Note that the plasma treatment is performed using the above conditions unless otherwise specified.

Note that FIG. 56B illustrates the case where a plasma treatment insulating film is formed by performing plasma treatment on the surface of the substrate 110111; however, in this embodiment, the substrate 11011 is used.
This includes the case where a plasma processing insulating film is not formed on the surface of 1.

Note that in FIGS. 56C to 56G, a plasma treatment insulating film formed by plasma treatment of the surface of the object to be processed is not illustrated, but in this embodiment mode, the substrate 11 is not illustrated.
0111, insulating film 110112, semiconductor layers 110113, 110114, 110115,
This includes the case where a plasma treatment insulating film formed by performing plasma treatment exists on the surface of the insulating film 110116, the insulating film 110118, or the insulating film 110119.

Next, an insulating film 110112 is formed over the substrate 110111 by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) (FIG. 56C). As the insulating film 110112, silicon oxide (SiOx) or silicon oxynitride (SiOxNy) (x> y) can be used.

Here, a plasma treatment insulating film may be formed on the surface of the insulating film 110112 by performing plasma treatment on the surface of the insulating film 110112 and oxidizing or nitriding the insulating film 110112. By oxidizing the surface of the insulating film 110112, the surface of the insulating film 110112 can be modified to obtain a dense film with few defects such as pinholes. Insulating film 1101
By oxidizing the surface of 12, a plasma processing insulating film with a low N atom content can be formed. Therefore, when a semiconductor layer is provided on the plasma processing insulating film, the interface characteristics between the plasma processing insulating film and the semiconductor layer are improves. The plasma processing insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. Note that the plasma treatment can be similarly performed under the above-described conditions.

Next, island-shaped semiconductor layers 110113 and 110114 are formed over the insulating film 110112 (
FIG. 56 (D)). The island-shaped semiconductor layers 110113 and 110114 are formed on the insulating film 110112 by using a known method (sputtering method, LPCVD method, plasma CVD method, or the like) with silicon (S
An amorphous semiconductor layer is formed using a material having i) as a main component (for example, Si _x Ge _1-x or the like), the amorphous semiconductor layer is crystallized, and the semiconductor layer is selectively etched. Can be provided. The amorphous semiconductor layer is crystallized by a laser crystallization method, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or a combination of these methods. It can carry out by well-known crystallization methods, such as a method. Note that here, the end portion of the island-shaped semiconductor layer is provided in a shape close to a right angle (θ = 85 to 100 °). Alternatively, the semiconductor layer 110114 serving as a low-concentration drain region is doped with impurities using a mask.
It may be formed by pinging.

Here, the surface of the semiconductor layers 110113 and 110114 is subjected to plasma treatment, so that the semiconductor layer 1
By oxidizing or nitriding the surfaces of 10113 and 110114, the semiconductor layer 11011 is obtained.
3, a plasma treatment insulating film may be formed on the surface of 110114. For example, the semiconductor layer 11
When Si is used for 0113 and 110114, silicon oxide (SiOx) or silicon nitride (SiNx) is formed as the plasma processing insulating film. Alternatively, the semiconductor layers 110113 and 110114 may be oxidized by plasma treatment and then nitrided by performing plasma treatment again. In this case, silicon oxide (SiOx) is formed in contact with the semiconductor layers 110113 and 110114, and silicon nitride oxide (SiNxOy) (x>
y) is formed. Note that in the case of oxidizing the semiconductor layer by plasma treatment, in an oxygen atmosphere (for example, in an atmosphere of oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed in oxygen and hydrogen (H ₂ ) and a rare gas atmosphere or dinitrogen monoxide and a rare gas atmosphere. On the other hand, when the semiconductor layer is nitrided by plasma treatment, nitrogen (N ₂ ) and a rare gas (He, Ne, Ar, Kr, X
including at least one of e), nitrogen, hydrogen and rare gas atmosphere or NH
3 and a rare gas atmosphere). As the rare gas, for example, Ar can be used. A gas in which Ar and Kr are mixed may be used. Therefore, the plasma processing insulating film includes a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, Ar is contained in the plasma processing insulating film.

Next, an insulating film 110116 is formed (FIG. 56E). The insulating film 110116 is formed using a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) using silicon oxide (SiOx).
), Silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (
A single-layer structure of an insulating film containing oxygen or nitrogen such as SiNxOy) (x> y) or a stacked structure thereof can be used. Note that in the case where a plasma treatment insulating film is formed on the surfaces of the semiconductor layers 110113 and 110114 by performing plasma treatment on the surfaces of the semiconductor layers 110113 and 110114, the plasma treatment insulating film can be used as the insulating film 110116. .

Here, the plasma treatment insulating film may be formed on the surface of the insulating film 110116 by performing plasma treatment on the surface of the insulating film 110116 and oxidizing or nitriding the surface of the insulating film 110116. Note that the plasma treatment insulating film is formed of a rare gas (He, Ne,
Including at least one of Ar, Kr, and Xe). Further, the plasma treatment can be similarly performed under the above-described conditions.

Alternatively, the insulating film 110116 may be oxidized by performing plasma treatment once in an oxygen atmosphere and then nitrided by performing plasma treatment again in a nitrogen atmosphere. In this manner, by performing plasma treatment on the insulating film 110116 and oxidizing or nitriding the surface of the insulating film 110116, the surface of the insulating film 110116 can be modified and a dense film can be formed. An insulating film obtained by performing plasma treatment is denser and has fewer defects such as pinholes than an insulating film formed by a CVD method or a sputtering method, so that characteristics of the thin film transistor can be improved.

Next, the gate electrode 110117 is formed (FIG. 56F). The gate electrode 110117 can be formed by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like).

In 110101, by performing impurity doping after forming the gate electrode 110117, the semiconductor layer 110115 used as the source region and the drain region can be formed.

In 110102, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110103, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110104, a side wall 110121 is formed on the side surface of the gate electrode 110117.
110114 is used as an LDD region by performing impurity doping.
The semiconductor layer 110115 used as the semiconductor layer source region and the drain region can be formed.

The side wall 110121 is made of silicon oxide (SiOx) or silicon nitride (SiNx).
Can be used. As a method of forming the side wall 110121 on the side surface of the gate electrode 110117, for example, after forming the gate electrode 110117, silicon oxide (
A method of etching a silicon oxide (SiOx) or silicon nitride (SiNx) film by anisotropic etching after forming a film of SiOx) or silicon nitride (SiNx) by a known method can be used. Thus, silicon oxide (SiO 2) is formed only on the side surface of the gate electrode 110117.
x) or a silicon nitride (SiNx) film can be left, so that the side wall 110121 can be formed on the side surface of the gate electrode 110117.

In 110105, a mask 110122 is formed so as to cover the gate electrode 110117, and then impurity doping is performed to use it as an LDD (Loff) region 11.
A semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

In 110106, by performing impurity doping after forming the gate electrode 110117, a semiconductor layer 110115 used as an LDD (Lov) region and a semiconductor layer 110115 used as a semiconductor layer source region and a drain region can be formed.

Next, an insulating film 110118 is formed (FIG. 56G). The insulating film 110118 is formed of silicon oxide (SiOx) or silicon nitride (S) by a known means (such as sputtering or plasma CVD).
iNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (
It can be provided with a single layer structure of an insulating film containing oxygen or nitrogen such as x> y) or a film containing carbon such as DLC (diamond like carbon), or a laminated structure thereof.

Here, a plasma treatment insulating film may be formed on the surface of the insulating film 110118 by performing plasma treatment on the surface of the insulating film 110118 and oxidizing or nitriding the surface of the insulating film 110118. Note that the plasma treatment insulating film is formed of a rare gas (He, Ne,
Including at least one of Ar, Kr, and Xe). Further, the plasma treatment can be similarly performed under the above-described conditions.

Next, an insulating film 110119 is formed. The insulating film 110119 is formed by a known means (sputtering method, plasma CVD method, or the like) using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) ( In addition to insulating films containing oxygen or nitrogen such as x> y) and films containing carbon such as DLC (Diamond Like Carbon), epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene In addition, a single layer structure of an organic material such as acrylic or a siloxane resin, or a laminated structure thereof can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. The plasma processing insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, the plasma processing insulating film is used. Ar is contained in the film.

In the case where an organic material such as polyimide, polyamide, polyvinyl phenol, benzocyclobutene, or acrylic, or a siloxane resin is used as the insulating film 110119, the insulating film 110119 is used.
The surface of the insulating film can be modified by oxidizing or nitriding the surface of the insulating film by plasma treatment. By modifying the surface, the strength of the insulating film 110119 is improved, and it is possible to reduce physical damage such as generation of cracks at the time of opening formation or the like and film reduction at the time of etching. In addition, when the surface of the insulating film 110119 is modified, adhesion with the conductive film is improved when the conductive film 110123 is formed over the insulating film 110119. For example, in the case where siloxane resin is used as the insulating film 110119 and nitridation is performed using plasma treatment, the surface of the siloxane resin is nitrided, so that a plasma treatment insulating film containing nitrogen or a rare gas is formed, and the physical strength is increased. improves.

Next, in order to form the conductive film 110123 electrically connected to the semiconductor layer 110115,
Contact holes are formed in the insulating film 110119, the insulating film 110118, and the insulating film 110116. Note that the shape of the contact hole may be tapered. By doing this,
The coverage of the conductive film 110123 can be improved.

FIG. 60 illustrates a cross-sectional structure of a bottom-gate transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110502) is formed over the entire surface of the substrate 110501. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

A first conductive layer (a conductive layer 110503 and a conductive layer 110504) is formed over the first insulating film. The conductive layer 110503 includes a portion functioning as the gate electrode of the transistor 110520. The conductive layer 110504 includes a portion functioning as the first electrode of the capacitor 110521. The first conductive layer includes Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A second insulating film (insulating film 110522) is formed so as to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A semiconductor layer is formed by a photolithography method, an inkjet method, a printing method, or the like on a part of the second insulating film which is formed so as to overlap with the first conductive layer. A part of the semiconductor layer is extended to a portion of the second insulating film that is not formed so as to overlap the first conductive layer. The semiconductor layer includes a channel formation region (a channel formation region 1105
10), an LDD region (LDD region 110508, LDD region 110509), and an impurity region (impurity region 110505, impurity region 110506, impurity region 110507). The channel formation region 110510 functions as a channel formation region of the transistor 110520. The LDD region 110508 and the LDD region 110509 function as an LDD region of the transistor 110520. Note that the LDD region 110508 and the LDD region 110509 are not necessarily required. The impurity region 110505 is formed in the transistor 11
0520 includes a portion functioning as one of a source electrode and a drain electrode. Impurity region 1
50506 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110520. The impurity region 110507 includes a portion functioning as the second electrode of the capacitor 110521.

A third insulating film (insulating film 110511) is formed on the entire surface. A contact hole is selectively formed in a part of the third insulating film. The insulating film 110511 has a function as an interlayer film. As the third insulating film, an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, or the like), a low dielectric constant organic compound material (photosensitive or non-photosensitive organic resin material), or the like can be used. Alternatively, a material containing siloxane can be used. Siloxane is a material in which a skeleton structure is formed by a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. Alternatively, a fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.

A second conductive layer (a conductive layer 110512 and a conductive layer 110513) is formed over the third insulating film. The conductive layer 110512 is connected to the other of the source electrode and the drain electrode of the transistor 110520 through a contact hole formed in the third insulating film. Therefore, the conductive layer 110512 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110520. The conductive layer 110513 includes a portion functioning as the first electrode of the capacitor 110521. As the second conductive layer, Ti, Mo, Ta
, Cr, W, Al, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, G
e or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

The structure of the transistor and the capacitor in the case where an amorphous silicon (a-Si: H) film is used for the semiconductor layer of the transistor will be described.

FIG. 57 shows a cross-sectional structure of a top-gate transistor and a cross-sectional structure of a capacitor.

A first insulating film (insulating film 110202) is formed over the entire surface of the substrate 110201. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

Note that the first insulating film is not necessarily formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110203, a conductive layer 110204, and a conductive layer 110205) is formed over the first insulating film. The conductive layer 110203 includes a portion functioning as one of a source electrode and a drain electrode of the transistor 110220. Conductive layer 11020
4 includes a portion functioning as the other of the source electrode and the drain electrode of the transistor 110220. The conductive layer 110205 includes a portion functioning as the first electrode of the capacitor 110221. The first conductive layer includes Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A first semiconductor layer (semiconductor layer 110) is formed over the conductive layer 110203 and the conductive layer 110204.
206 and semiconductor layer 110207). The semiconductor layer 110206 includes a portion that functions as one of a source electrode and a drain electrode. The semiconductor layer 110207 includes
A portion functioning as the other of the source electrode and the drain electrode is included. Note that as the first semiconductor layer, silicon containing phosphorus or the like can be used.

The second layer is formed between the conductive layer 110203 and the conductive layer 110204 and over the first insulating film.
The semiconductor layer (semiconductor layer 110208) is formed. Then, the semiconductor layer 110208
Is extended to the top of the conductive layer 110203 and the conductive layer 110204. The semiconductor layer 110208 includes a portion functioning as a channel region of the transistor 110220. Note that as the second semiconductor layer, an amorphous semiconductor layer such as amorphous silicon (a-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used. .

In order to cover at least the semiconductor layer 110208 and the conductive layer 110205, the second insulating film (
An insulating film 110209 and an insulating film 110210) are formed. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the second semiconductor layer. This is because the trap level at the interface between the second semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

A second conductive layer (a conductive layer 110211 and a conductive layer 110212) is formed over the second insulating film. The conductive layer 110211 includes a portion functioning as a gate electrode of the transistor 110220. The conductive layer 110212 functions as the second electrode or the wiring of the capacitor 110221. As the second conductive layer, Ti, Mo, Ta, Cr, W, A
l, Nd, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

FIG. 58 illustrates a cross-sectional structure of an inverted staggered (bottom gate) transistor and a cross-sectional structure of a capacitor. In particular, the transistor illustrated in FIG. 58 has a structure called a channel etch type.

A first insulating film (insulating film 110302) is formed over the entire surface of the substrate 110301. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

Note that the first insulating film is not necessarily formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110303 and a conductive layer 110304) is formed over the first insulating film. The conductive layer 110303 includes a portion functioning as the gate electrode of the transistor 110320. The conductive layer 110304 includes a portion functioning as the first electrode of the capacitor 110321. As the first conductive layer, Ti, Mo, TB, Cr, W, Bl, N
d, Cu, Bg, Bu, Pt, NA-Si, Zn, Fe, BB, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A second insulating film (insulating film 110302) is formed so as to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

The first semiconductor layer (semiconductor layer 11) is formed on a part of the second insulating film which is formed so as to overlap with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0306) is formed. A part of the semiconductor layer 110308 is extended to a portion of the second insulating film that is not formed so as to overlap with the first conductive layer. Semiconductor layer 11
0306 includes a portion functioning as a channel region of the transistor 110320. Note that as the semiconductor layer 110306, an amorphous semiconductor layer such as amorphous silicon (A-Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used.

The second semiconductor layer (semiconductor layer 110307 and semiconductor layer 110 is formed over part of the first semiconductor layer.
307) is formed. The semiconductor layer 110307 includes a portion that functions as one of a source electrode and a drain electrode. The semiconductor layer 110308 includes a portion that functions as the other of the source electrode and the drain electrode. Note that as the second conductor layer, silicon containing phosphorus or the like can be used.

A second conductive layer (a conductive layer 110309, a conductive layer 1) is formed over the second semiconductor layer and the second insulating film.
10310 and a conductive layer 110311). The conductive layer 110309 includes a portion functioning as one of a source electrode and a drain electrode of the transistor 110320. The conductive layer 110310 includes a portion functioning as the other of the source and the drain electrode of the transistor 110320. The conductive layer 110312 includes a portion functioning as the second electrode of the capacitor 110321. As the second conductive layer, Ti, Mo, Ta, Cr, W, Al, N
d, Cu, Ag, Au, Pt, NA-Si, Zn, Fe, Ba, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

Here, an example of a process characterized by a channel etch transistor will be described. The first semiconductor layer and the second semiconductor layer can be formed using the same mask. In particular,
The first semiconductor layer and the second semiconductor layer are continuously formed. The first semiconductor layer and the second semiconductor layer are formed using the same mask.

Another example of a process characterized by a channel etch transistor will be described. The channel region of the transistor can be formed without using a new mask. In particular,
After the second conductive layer is formed, part of the second semiconductor layer is removed using the second conductive layer as a mask. Alternatively, part of the second semiconductor layer is removed using the same mask as the second conductive layer. Then, the first semiconductor layer formed under the removed second semiconductor layer becomes a channel region of the transistor.

FIG. 59 illustrates a cross-sectional structure of an inverted staggered (bottom gate) transistor and a cross-sectional structure of a capacitor. In particular, the transistor illustrated in FIG. 59 has a structure called a channel protection type (channel stop type).

A first insulating film (insulating film 110402) is formed over the entire surface of the substrate 110401. The first insulating film has a function of preventing impurities from the substrate side from affecting the semiconductor layer and changing the characteristics of the transistor. That is, the first insulating film functions as a base film. Therefore, a highly reliable transistor can be manufactured. Note that as the first insulating film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy) is used.
) Or a stack of these layers can be used.

Note that the first insulating film is not necessarily formed. In this case, the number of processes can be reduced. The manufacturing cost can be reduced. Since the structure can be simplified, the yield can be improved.

A first conductive layer (a conductive layer 110403 and a conductive layer 110404) is formed over the first insulating film. The conductive layer 110403 includes a portion functioning as the gate electrode of the transistor 110420. The conductive layer 110404 includes a portion functioning as the first electrode of the capacitor 110421. As the first conductive layer, Ti, Mo, TC, Cr, W, Cl, N
d, Cu, Cg, Cu, Pt, NC, Si, Zn, Fe, CC, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

A second insulating film (insulating film 110402) is formed so as to cover at least the first conductive layer. The second insulating film functions as a gate insulating film. Note that as the second insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

Note that a silicon oxide film is preferably used as the second insulating film in contact with the semiconductor layer. This is because the trap level at the interface between the semiconductor layer and the second insulating film is reduced.

Note that in the case where the second insulating film is in contact with Mo, it is preferable to use a silicon oxide film as the second insulating film in a portion in contact with Mo. This is because the silicon oxide film does not oxidize Mo.

The first semiconductor layer (semiconductor layer 11) is formed on a part of the second insulating film which is formed so as to overlap with the first conductive layer by a photolithography method, an inkjet method, a printing method, or the like.
0406) is formed. A part of the semiconductor layer 110408 is extended to a portion of the second insulating film which is not formed so as to overlap with the first conductive layer. Semiconductor layer 11
0406 includes a portion functioning as a channel region of the transistor 110420. Note that as the semiconductor layer 110406, an amorphous semiconductor layer such as amorphous silicon (C—Si: H) or a semiconductor layer such as a microcrystalline semiconductor (μ-Si: H) can be used.

A third insulating film (insulating film 110412) is formed over part of the first semiconductor layer. The insulating film 110412 has a function of preventing the channel region of the transistor 110420 from being removed by etching. That is, the insulating film 110412 functions as a channel protective film (channel stop film). Note that as the third insulating film, a single layer such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film (SiOxNy), or a stacked layer thereof can be used.

A second semiconductor layer (semiconductor layer 110) is formed on a part of the first semiconductor layer and a part of the third insulating film.
407 and semiconductor layer 110408). The semiconductor layer 110407 includes a portion that functions as one of a source electrode and a drain electrode. The semiconductor layer 110408 includes:
A portion functioning as the other of the source electrode and the drain electrode is included. Note that as the second conductor layer, silicon containing phosphorus or the like can be used.

A second conductive layer (a conductive layer 110409, a conductive layer 110410, and a conductive layer 110411) is formed over the second semiconductor layer. The conductive layer 110409 includes the transistor 110420.
A portion functioning as one of the source electrode and the drain electrode. The conductive layer 110410 includes
A portion functioning as the other of the source and the drain electrode of the transistor 110420 is included. The conductive layer 110411 includes a portion functioning as the second electrode of the capacitor 110421. As the second conductive layer, Ti, Mo, Ta, Cr, W, Al, Nd, Cu, Ag, A
u, Pt, NC, Si, Zn, Fe, Ca, Ge, or an alloy thereof can be used. Alternatively, a stack of these elements (including alloys) can be used.

Note that as a step after the second conductive layer is formed, various insulating films or various conductive films may be formed.

Here, an example of a process characterized by a channel protection transistor will be described. The first semiconductor layer, the second semiconductor layer, and the second conductive layer can be formed using the same mask.
At the same time, a channel region can be formed. Specifically, the first semiconductor layer is formed,
Next, a third insulating film (channel protective film, channel stop film) is formed using a mask,
Next, a second semiconductor layer and a second conductive layer are successively formed. Then, after the second conductive layer is formed, the first semiconductor layer, the second semiconductor layer, and the second conductive layer are formed using the same mask. However, since the first semiconductor layer below the third insulating film is protected by the third insulating film, it is not removed by etching. This portion (the portion of the first semiconductor layer in which the third insulating film is formed above) becomes the channel region.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 13)
In this embodiment, the structure of an EL element will be described. In particular, the structure of the inorganic EL element will be described.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of luminescent material, but is accelerated by a high electric field. This is common in that it requires more electrons. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. Generally, in the dispersion type inorganic EL, a donor-
In many cases, acceptor recombination light emission and thin-film inorganic EL elements emit localized light.

The light-emitting material includes a base material and an impurity element serving as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method or a liquid phase method (coprecipitation method) can be used. Alternatively, a spray pyrolysis method, a metathesis method, a precursor thermal decomposition method, a reverse micelle method or a method combining these methods with high temperature firing, a liquid phase method such as a freeze drying method, or the like can also be used.

In the solid phase method, a base material and an impurity element or a compound containing an impurity element are weighed and mixed in a mortar.
This is a method in which an impurity element is contained in the base material by reacting by heating and baking in an electric furnace. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. Although firing at a relatively high temperature is required, it is a simple method, so it has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for the light-emitting material, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. Examples of the nitride include aluminum nitride (AlN), gallium nitride (GaN),
Indium nitride (InN) or the like can be used. Furthermore, zinc selenide (ZnSe)
, Zinc telluride (ZnTe) and the like can also be used, such as calcium sulfide-gallium (CaG
It may be a ternary mixed crystal such as a ₂ S ₄ ), strontium sulfide-gallium sulfide (SrGa ₂ S ₄ ), or barium sulfide-gallium sulfide (BaGa ₂ S ₄ ).

As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

On the other hand, as a light emission center of donor-acceptor recombination light emission, a first donor level is formed.
And a light-emitting material including a second impurity element which forms an acceptor level. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. As the second impurity element, for example, copper (Cu),
Silver (Ag) or the like can be used.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element Each of the compounds containing the impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) or the like, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) or the like can be used. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

As an impurity element in the case of using a solid phase reaction, a compound composed of a first impurity element and a second impurity element may be used in combination. In this case, the impurity element is easily diffused,
Since the solid-phase reaction easily proceeds, a uniform luminescent material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. Examples of the compound composed of the first impurity element and the second impurity element include copper chloride (CuCl), silver chloride (
AgCl) or the like can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

In the case of a thin film type inorganic EL, the electroluminescent layer is a layer containing the light emitting material,
Vacuum vapor deposition methods such as electron beam evaporation (EB vapor deposition), physical vapor deposition methods such as sputtering (
Chemical vapor deposition (CV) such as PVD), metal organic chemical vapor deposition, hydride transport low pressure CVD
D), an atomic epitaxy method (ALE), or the like.

FIGS. 61A to 61C illustrate an example of a thin-film inorganic EL element that can be used as a light-emitting element. 61A to 61C, the light-emitting element includes a first electrode layer 120100, an electroluminescent layer 120102, and a second electrode layer 120103.

A light-emitting element illustrated in FIGS. 61B and 61C has a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. 61A. The light-emitting element illustrated in FIG.
An insulating film 120104 is provided between the electrode layer 120100 and the electroluminescent layer 120102, and the light-emitting element illustrated in FIG. 61C includes an insulating film 120105 between the first electrode layer 120100 and the electroluminescent layer 120102. An insulating film 120106 is provided between the second electrode layer 120103 and the electroluminescent layer 120102.

Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a stacked layer having a plurality of layers.

Note that although the insulating film 120104 is provided so as to be in contact with the first electrode layer 120100 in FIG. 61B, the order of the insulating film and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 120103. An insulating film 120104 may be provided.

In the case of a dispersion-type inorganic EL, a particulate luminescent material is dispersed in a binder to form a film-like electroluminescent layer. Process into particles. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. What is a binder?
It is a substance for fixing a granular luminescent material in a dispersed state and maintaining the shape as an electroluminescent layer. The light emitting material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

In the case of a dispersion-type inorganic EL, the electroluminescent layer can be formed by a droplet discharge method that can selectively form an electroluminescent layer, a printing method (such as screen printing or offset printing), a coating method such as a spin coating method, or dipping. It is also possible to use a method or a dispenser method. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the electroluminescent layer including the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

62A to 62C illustrate an example of a dispersion-type inorganic EL element that can be used as a light-emitting element. A light-emitting element in FIG. 62A includes a first electrode layer 120200 and an electroluminescent layer 12.
0202 and a light emitting material 120201 having a stacked structure of the second electrode layer 120203 and held in the electroluminescent layer 120202 by a binder.

An insulating material can be used for the binder. As the insulating material, an organic material or an inorganic material can be used. Alternatively, a mixed material of an organic material and an inorganic material may be used. As the organic insulating material, a polymer having a relatively high dielectric constant, such as cyanoethyl cellulose resin, polyethylene, polypropylene, polystyrene resin, silicon resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide or polybenzimidazole, or a siloxane resin may be used. Note that the siloxane resin is Si-O-S.
It corresponds to a resin containing i-bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Alternatively, a resin material such as a vinyl resin such as polyvinyl alcohol or polyvinyl butyral, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, a urethane resin, or an oxazole resin (polybenzoxazole) may be used. These resins include barium titanate (Ba
The dielectric constant can be adjusted by appropriately mixing fine particles having a high dielectric constant such as TiO ₃ ) or strontium titanate (SrTiO ₃ ).

Examples of the inorganic insulating material contained in the binder include silicon oxide (SiOx) and silicon nitride (SiNx).
), Silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, aluminum oxide containing oxygen and nitrogen (Al ₂ O ₃ ), titanium oxide (TiO ₂ )
, BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KN)
bO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), barium tantalate (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y
₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS, and other materials including inorganic insulating materials. By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the electroluminescent layer made of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. .

In the manufacturing process, the light-emitting material is dispersed in a solution containing a binder. As a solvent for the solution containing the binder, a method for forming the electroluminescent layer by dissolving the binder material (various wet processes) and a solvent capable of producing a solution having a viscosity suitable for a desired film thickness may be appropriately selected. . For example, an organic solvent or the like can be used as the solvent. When a siloxane resin is used as the binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB), or the like can be used as a solvent.

The light-emitting element illustrated in FIGS. 62B and 62C has a structure in which an insulating film is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. The light-emitting element illustrated in FIG.
An insulating film 120204 is provided between the electrode layer 120200 and the electroluminescent layer 120202, and the light-emitting element illustrated in FIG. 62C includes an insulating film 120205 between the first electrode layer 120200 and the electroluminescent layer 120202. An insulating film 120206 is provided between the second electrode layer 120203 and the electroluminescent layer 120202. Thus, the insulating film may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. The insulating film may be a single layer or a stacked layer including a plurality of layers.

In FIG. 62B, the insulating film 120204 is provided so as to be in contact with the first electrode layer 120200; however, the insulating film and the electroluminescent layer are reversed in order so as to be in contact with the second electrode layer 120203. A film 120204 may be provided.

A material that can be used for the insulating films such as the insulating film 120104 in FIG. 61 and the insulating film 120204 in FIG. 62 preferably has high insulation resistance and a dense film quality. Furthermore, it is preferable that the dielectric constant is high. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTiO ₃
), Strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., or a mixed film or a laminate of two or more of them Can do. These insulating films are formed by sputtering, vapor deposition, C
The film can be formed by VD or the like. The insulating film may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but preferably 10 to 10
The range is 00 nm.

Note that the light-emitting element can emit light by applying a voltage between a pair of electrode layers sandwiching the electroluminescent layer, but can operate in either DC driving or AC driving.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 14)
In this embodiment, an example of a display device, particularly a case where optical handling is performed will be described.

A rear projection display device 130100 shown in FIGS. 63A and 63B includes a projector unit 130111, a mirror 130112, and a screen panel 130101. In addition, a speaker 130102 and operation switches 130104 may be provided. The projector unit 130111 includes a housing 130 of the rear projection display device 130100.
The projection light which is arrange | positioned under 110 and projects an image | video based on a video signal is mirror 13011.
Project toward 2 The rear projection display device 130100 includes a screen panel 130101.
It is the structure which displays the image | video projected from the back.

On the other hand, FIG. 64 shows a front projection display device 130200. Front projection display device 1
30200 includes a projector unit 130111 and a projection optical system 130201. The projection optical system 130201 is configured to project an image on a screen or the like disposed on the front surface.

63. The rear projection display device 130100 shown in FIG. 63 and the front projection display device 130 shown in FIG.
The configuration of the projector unit 130111 applied to 200 will be described below.

FIG. 65 shows a configuration example of the projector unit 130111. The projector unit 130111 includes a light source unit 130301 and a modulation unit 130304. The light source unit 130301 includes a light source optical system 13 including lenses.
0303 and a light source lamp 130302. The light source lamp 130302 is housed in the housing so that stray light does not diffuse. As the light source lamp 130302, for example, a high-pressure mercury lamp or a xenon lamp that can emit a large amount of light is used. The light source optical system 130303 is configured by appropriately providing an optical lens, a film having a polarization function, a film for adjusting a phase difference, an IR film, and the like. The light source unit 130301 is disposed so that the emitted light is incident on the modulation unit 130304. Modulation unit 1
Reference numeral 30304 denotes a plurality of display panels 130308, a color filter, a dichroic mirror 130305, a total reflection mirror 130306, a prism 130309, and a projection optical system 1303.
10 is provided. Light emitted from the light source unit 130301 is separated into a plurality of optical paths by the dichroic mirror 130305.

In each optical path, a color filter that transmits light of a predetermined wavelength or wavelength band, and the display panel 1
30308 is provided. A transmissive display panel 130308 modulates transmitted light based on a video signal. The light of each color transmitted through the display panel 130308 is converted into a prism 1303.
09 and enters the image through the projection optical system 130310 to display an image on the screen. In addition,
A Fresnel lens may be disposed between the mirror and the screen. The projection light projected by the projector unit 130111 and reflected by the mirror is converted into substantially parallel light by the Fresnel lens and projected onto the screen.

A projector unit 130111 shown in FIG. 66 includes a reflective display panel 130407,
The structure provided with 130408 and 130409 is shown.

A projector unit 130111 shown in FIG. 66 includes a light source unit 130301 and a modulation unit 130400. The light source unit 130301 may have the same configuration as that in FIG. The light from the light source unit 130301 is emitted from the dichroic mirror 13040.
1, 130402 and the total reflection mirror 130403 are divided into a plurality of optical paths and enter the polarization beam splitters 130404, 130405, and 130406. The polarizing beam splitters 130404, 130405, and 130406 are provided corresponding to the reflective display panels 130407, 130408, and 130409 corresponding to the respective colors. The reflective display panels 130407, 130408, and 130409 modulate reflected light based on the video signal. The light beams of the respective colors reflected by the reflective display panels 130407, 130408, and 130409 are combined by being incident on the prism 130309 and projected through the projection optical system 13041.

Light emitted from the light source unit 130301 is transmitted through the dichroic mirror 130401 only in the red wavelength region and reflects in the green and blue wavelength regions. Further, the dichroic mirror 130402 reflects only light in the green wavelength region. The light in the red wavelength region that has passed through the dichroic mirror 130401 is reflected by the total reflection mirror 130403,
Light enters the polarization beam splitter 130404, light in the blue wavelength region enters the polarization beam splitter 130405, and light in the green wavelength region enters the polarization beam splitter 130406. The polarization beam splitters 130404, 130405, and 130406 have a function of separating incident light into P-polarized light and S-polarized light, and have a function of transmitting only P-polarized light. The reflective display panels 130407, 130408, and 130409 polarize incident light based on the video signal.

Only S-polarized light corresponding to each color is incident on the reflective display panels 130407, 130408, and 130409 corresponding to the respective colors. Note that the reflective display panels 130407, 130408,
130409 may be a liquid crystal panel. At this time, the liquid crystal panel operates in an electric field controlled birefringence mode (ECB). The liquid crystal molecules are vertically aligned with a certain angle with respect to the substrate. Accordingly, the display molecules of the reflective display panels 130407, 130408, and 130409 are oriented so that they are reflected without changing the polarization state of incident light when the pixel is in the off state. When the pixel is in the on state, the orientation state of the display molecules changes and the polarization state of incident light changes.

A projector unit 130111 shown in FIG. 66 is a rear projection display device 1 shown in FIG.
30100 and the front projection display device 130200 shown in FIG.

The projector unit shown in FIG. 67 has a single-plate configuration. A projector unit 130111 shown in FIG. 67A includes a light source unit 130301 and a display panel 1305.
07, a projection optical system 130511, and a retardation plate 130504. Projection optical system 130
Reference numeral 511 includes one or a plurality of lenses. The display panel 130507 may be provided with a color filter.

FIG. 67B shows a projector unit 130 that operates in a field sequential manner.
111 shows the configuration. The field sequential method is a method in which light of each color such as red, green, and blue is temporally shifted and sequentially incident on a display panel to perform color display without a color filter. In particular, when combined with a display panel having a high response speed with respect to input signal changes, a high-definition image can be displayed. In FIG. 67B, the light source unit 1303
A rotating color filter plate 130505 provided with a plurality of color filters such as red, green, and blue is provided between 01 and the display panel 130508.

A projector unit 130111 shown in FIG. 67C has a configuration of a color separation method using a macro lens as a color display method. In this method, a microlens array 130506 is provided on the light incident side of the display panel 130509, and color display is realized by illuminating light of each color from each direction. Since the projector unit 130111 adopting this method has little light loss due to the color filter, the light source unit 13
The light from 0301 can be used effectively. FIG. 67 (C)
The projector unit 130111 includes a dichroic mirror 130501, a dichroic mirror 130502, and a dichroic mirror for red light 130503 so as to illuminate the display panel 130509 with light of each color from each direction.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 15)
In this embodiment, the operation of the display device will be described.

FIG. 68 is a diagram illustrating a configuration example of a display device.

The display device 180100 includes a pixel portion 180101, a signal line driver circuit 180103, and a scan line driver circuit 180104. In the pixel portion 180101, a plurality of signal lines S1 to Sm are arranged to extend from the signal line driver circuit 180103 in the column direction. Pixel portion 180101
A plurality of scanning lines G 1 to Gn are arranged extending in the row direction from the scanning line driving circuit 180104. The pixels 180102 are arranged in a matrix where the plurality of signal lines S1 to Sm and the plurality of scanning lines G1 to Gn intersect each other.

Note that the signal line driver circuit 180103 has a function of outputting a signal to each of the signal lines S1 to Sn. This signal may be called a video signal. Note that the scan line driver circuit 180104
Has a function of outputting a signal to each of the scanning lines G1 to Gm. This signal may be called a scanning signal.

Note that the pixel 180102 includes at least a switching element connected to the signal line. This switching element is controlled to be turned on and off by the potential of the scanning line (scanning signal). The pixel 180102 is selected when the switching element is on, and the pixel 180102 is not selected when the switching element is off.

When the pixel 180102 is selected (selected state), a video signal is input from the signal line to the pixel 180102. Then, the state of the pixel 180102 (eg, luminance, transmittance, storage capacitor voltage, etc.) changes in accordance with the input video signal.

When the pixel 180102 is not selected (non-selected state), the video signal is the pixel 1801.
02 is not entered. However, since the pixel 180102 holds a potential corresponding to the video signal input at the time of selection, the pixel 180102 maintains the voltage (for example, luminance, transmittance, storage capacitor voltage, etc.) corresponding to the video signal.

Note that the structure of the display device is not limited to FIG. For example, a wiring (a scanning line, a signal line, a power supply line, a capacitor line, a common line, or the like) may be newly added depending on the structure of the pixel 180102. As another example, a circuit having various functions may be added.

FIG. 69 shows an example of a timing chart for explaining the operation of the display device.

The timing chart of FIG. 69 shows one frame period corresponding to a period for displaying an image for one screen. There is no particular limitation on the period of one frame, but the person who sees the image flickers (flicker)
It is preferable to set it to at least 1/60 second or less so as not to feel the above.

The timing chart in FIG. 69 shows the first scanning line G1, the i-th scanning line Gi (scanning line G1).
1 to Gm), i + 1-th scanning line Gi + 1 and m-th scanning line Gm are respectively selected.

Note that at the same time as the scanning line is selected, the pixel 180102 connected to the scanning line is also selected. For example, when the i-th scanning line Gi is selected, the pixel 180102 connected to the i-th scanning line Gi is also selected.

Each of the scanning lines G1 to Gm is sequentially selected from the first scanning line G1 to the m-th scanning line Gm (hereinafter also referred to as scanning). For example, during the period when the i-th scanning line Gi is selected, scanning lines other than the i-th scanning line Gi (G1 to Gi-1, Gi + 1 to Gm).
) Is not selected. In the next period, the (i + 1) th scanning line Gi + 1 is selected. Note that a period during which one scanning line is selected is referred to as one gate selection period.

Therefore, when a scanning line in a certain row is selected, a plurality of pixels 180 connected to the scanning line.
A video signal is input to the signal line 102 from each of the signal lines G1 to Gm. For example, i
While the scanning line Gi of the row is selected, the plurality of pixels 180102 connected to the scanning line Gi of the i-th row input arbitrary video signals from the signal lines S1 to Sn, respectively.
Thus, each of the plurality of pixels 180102 can be controlled independently by the scanning signal and the video signal.

Next, a case where one gate selection period is divided into a plurality of subgate selection periods will be described.
FIG. 70 shows a timing chart in the case where one gate selection period is divided into two subgate selection periods (a first subgate selection period and a second subgate selection period).

Note that one gate selection period can be divided into three or more sub-gate selection periods.

The timing chart in FIG. 70 shows one frame period corresponding to a period during which an image for one screen is displayed. There is no particular limitation on the period of one frame, but the person who sees the image flickers (flicker)
It is preferable to set it to at least 1/60 second or less so as not to feel the above.

One frame has two subframes (first subframe and second subframe).
It is divided into

The timing chart of FIG. 70 shows the i-th scanning line Gi, the i + 1-th scanning line Gi + 1, j
This shows the timing at which the scanning line Gj in the row (any one of the scanning lines Gi + 1 to Gm), the scanning line in the j + 1th row, and the scanning line Gj + 1 in the Gj + 1th row are selected.

Note that at the same time as the scanning line is selected, the pixel 180102 connected to the scanning line is also selected. For example, when the i-th scanning line Gi is selected, the pixel 180102 connected to the i-th scanning line Gi is also selected.

Note that each of the scanning lines G1 to Gm is sequentially scanned within each sub-gate selection period. For example, in a certain gate selection period, the i-th scanning line Gi is selected in the first sub-gate selection period, and the j-th scanning line Gj is selected in the second sub-gate selection period.
Then, in one gate selection period, it is possible to operate as if scanning signals for two rows were selected at the same time. At this time, different video signals are input to the signal lines S1 to Sn in the first sub-gate selection period and the second sub-gate selection period. Therefore,
A plurality of pixels 180102 connected to the i-th row and a plurality of pixels 1 connected to the j-th row
Separate video signals can be input to the 80102.

Next, a driving method for improving the display quality will be described.

71A and 71B are diagrams illustrating high-frequency driving.

FIG. 71A is a diagram when one image and one intermediate image are displayed in one frame period 180400. FIG. 180401 is an image of the frame, 180402 is an intermediate image of the frame, 180403 is an image of the next frame, and 180404 is an intermediate image of the next frame.

Note that the intermediate image 180402 of the frame may be an image created based on the video signals of the frame and the next frame. The intermediate image 180402 of the frame is
It may be an image created from the image 180401 of the frame. Further, the intermediate image 180402 of the frame may be a black image. By doing so, the quality of the moving image of the hold type display device can be improved. In addition, when one image and one intermediate image are displayed in one frame period 180400, there is an advantage that consistency with the frame rate of the video signal can be easily obtained and the image processing circuit is not complicated.

FIG. 71B is a diagram when one image and two intermediate images are displayed in a period (two frame periods) in which one frame period 180400 continues. 180411 is an image of the frame, 180412 is an intermediate image of the frame, 180413 is an intermediate image of the next frame, and 180414 is an image of the next frame.

Note that the intermediate image 180412 of the frame and the intermediate image 180413 of the next frame are
It may be an image created based on the video signal of the frame, the next frame, and the frame after another. Further, the intermediate image 180412 of the frame and the intermediate image 180413 of the next frame.
May be a black image. When one image and two intermediate images are displayed in two frame periods, there is an advantage that the image quality of the moving image can be effectively improved without increasing the operating frequency of the peripheral drive circuit so much.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 16)
In this embodiment, the structure of an EL element will be described. In particular, the structure of the organic EL element will be described.

The structure of the mixed junction type EL element will be described. For example, a hole injection layer made of a hole injection material, a hole transport layer made of a hole transport material, a light emitting layer made of a light emitting material, an electron transport layer made of an electron transport material, an electron injection layer made of an electron injection material Is a layered structure in which a plurality of materials are mixed among materials such as a hole injection material, a hole transport material, a light emitting material, an electron transport material, and an electron injection material. A structure having a mixed layer (hereinafter referred to as a mixed junction type EL element) will be described.

72A, 72B, 72C, and 72D are schematic views illustrating the structure of a mixed junction type EL element. Note that a layer sandwiched between the anode 190101 and the cathode 190102 corresponds to an EL layer.

FIG. 72A includes a hole transport region 190103 in which the EL layer is made of a hole transport material and an electron transport region 190104 made of an electron transport material, and the hole transport region 190103 is on the anode side with respect to the electron transport region 190104. And a mixed region 1901 including both a hole transporting material and an electron transporting material between the hole transporting region 190103 and the electron transporting region 190104.
The structure provided with 05 is shown.

Note that in the direction from the anode 190101 to the cathode 190102, the concentration of the hole transport material in the mixed region 190105 decreases and the concentration of the electron transport material in the mixed region 190105 increases.

The method of setting the concentration gradient can be freely set. For example, the hole transport region 190103 made only of the hole transport material does not exist, and the concentration ratio of each functional material changes inside the mixed region 190105 including both the hole transport material and the electron transport material (the concentration gradient is changed). It may have a configuration. Alternatively, the hole transport region 190 made of only the hole transport material 190
103 and the electron transport region 190104 consisting only of the electron transport material does not exist, and the ratio of the concentration of each functional material changes (has a concentration gradient) inside the mixed region 190105 including both the hole transport material and the electron transport material. It may be a configuration. Alternatively, the concentration ratio may be changed depending on the distance from the anode or the cathode. The change in the concentration ratio may be continuous.

In the mixed region 190105, a region 190106 to which a light-emitting material is added is provided. The emission color of the EL element can be controlled by the light emitting material. Carriers can be trapped by the light emitting material. As the light emitting material, various fluorescent dyes can be used in addition to a metal complex including a quinoline skeleton, a metal complex including a benzoxador skeleton, a metal complex including a benzothiazol skeleton, and the like. By adding these light emitting materials, the light emission color of the EL element can be controlled.

As the anode 190101, an electrode material having a high work function is preferably used in order to inject holes efficiently. For example, a transparent electrode such as tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), ZnO, SnO _2, or In ₂ O ₃ can be used. Alternatively, if it is not necessary to have a light-transmitting property, the anode 190101 may be an opaque metal material.

An aromatic amine compound or the like can be used as the hole transport material.

As an electron transport material, a quinoline derivative, a metal complex having 8-quinolinol or a derivative thereof as a ligand (particularly, tris (8-quinolinolite) aluminum (Alq ₃ )) or the like can be used.

As the cathode 190102, an electrode material having a low work function is preferably used in order to inject electrons efficiently. A single metal such as aluminum, indium, magnesium, silver, calcium, barium, or lithium can be used. Or the alloy of these metals may be sufficient and the alloy of these metals and another metal may be sufficient.

FIG. 72B shows a schematic diagram of an EL element having a structure different from that in FIG. Note that FIG.
The same parts as in A) are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 72B, there is no region to which the light-emitting material is added. However, the electron transport region 190
As a material to be added to 104, a material having both an electron transporting property and a light emitting property (electron transporting light emitting material), for example, tris (8-quinolinolite) aluminum (Alq ₃ ) can be used for light emission.

Alternatively, as a material added to the hole-transport region 190103, a material having both hole-transport properties and light-emitting properties (hole-transport light-emitting material) may be used.

FIG. 72C shows a schematic diagram of an EL element having a structure different from those in FIGS. 72A and 72B. Note that the same portions as those in FIGS. 72A and 72B are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 72C, a hole blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital than the hole transporting material has a region 190107 added in the mixed region 190105. . A region 190107 to which a hole blocking material is added,
A cathode 190102 from a region 190106 to which a light emitting material is added in the mixed region 190105.
By disposing on the side, the carrier recombination rate can be increased and the luminous efficiency can be increased. The above-described configuration in which the region 190107 to which the hole blocking material is added is provided.
This is effective in an EL device using light emission (phosphorescence) by triple photoexcitons.

FIG. 7 is a schematic diagram of an EL element having a structure different from those in FIGS. 72A, 72B, and 72C.
2 (D). Note that the same portions as those in FIGS. 72A, 72B, and 72C are denoted by the same reference numerals, and description thereof is omitted.

In FIG. 72D, an electron blocking material having a larger energy difference between the highest occupied molecular orbital and the lowest occupied molecular orbital than the electron transporting material has a region 190108 added in the mixed region 190105. A region 190108 to which an electron blocking material is added,
The anode 190101 from the region 190106 to which the light emitting material is added in the mixed region 190105.
By disposing on the side, the carrier recombination rate can be increased and the luminous efficiency can be increased. The above-described configuration in which the region 190108 to which the electron blocking material is added is provided.
This is effective in an EL device using light emission (phosphorescence) by triple photoexcitons.

FIG. 72E is a schematic diagram illustrating a structure of a mixed-junction EL element different from those in FIGS. 72A, 72B, 72C, and 72D. FIG. 72E illustrates an example of a structure including a region 190109 to which a metal material is added in the portion of the EL layer in contact with the electrode of the EL element. In FIG. 72E, the same portions as those in FIGS. 72A to 72D are denoted by the same reference numerals, and description thereof is omitted. The structure shown in FIG. 72E is, for example, Mg as the cathode 190102.
A region 19010 in which an Al (aluminum) alloy is added to a region in contact with the cathode 190102 in an electron transport region 190104 to which an electron transport material is added using Ag (Mg—Ag alloy).
9 may be used. With the above structure, oxidation of the cathode can be prevented and the efficiency of electron injection from the cathode can be increased. Thus, the life of the mixed junction type EL element can be extended. The driving voltage can also be lowered.

As a method of manufacturing the mixed junction type EL element, a co-evaporation method or the like can be used.

In the mixed junction type EL element as shown in FIGS. 72A to 72E, there is no clear interface between layers, and charge accumulation can be reduced. In this way, the lifetime can be extended. The driving voltage can also be lowered.

Note that the structures illustrated in FIGS. 72A to 72E can be implemented in any combination.

Note that the structure of the mixed junction EL element is not limited thereto. A known configuration can be used freely.

Note that the organic material constituting the EL layer of the EL element may be a low molecular material or a high molecular material. Alternatively, both of these materials may be used. When a low molecular material is used as the organic compound material, the film can be formed by an evaporation method. On the other hand, in the case of using a polymer material for the EL layer, the polymer material can be dissolved in a solvent and formed into a film by a spin coating method or an inkjet method.

The EL layer may be made of a medium molecular material. In the present specification, the medium molecular organic light-emitting material refers to an organic light-emitting material having no sublimation property and having a degree of polymerization of about 20 or less. In the case where a medium molecular material is used for the EL layer, it can be formed by an inkjet method or the like.

Note that a low molecular material, a high molecular material, and a medium molecular material may be used in combination.

The EL element may be either one that uses light emission (fluorescence) from singlet excitons or one that uses light emission (phosphorescence) from triplet excitons.

Next, a vapor deposition apparatus for manufacturing a display device applicable to the present invention will be described with reference to the drawings.

A display device applicable to the present invention may be manufactured by forming an EL layer. The EL layer is formed including at least part of a material that exhibits electroluminescence. The EL layer may be composed of a plurality of layers having different functions. In that case, the EL layer may be configured by combining layers having different functions called a hole injecting and transporting layer, a light emitting layer, and an electron injecting and transporting layer.

FIG. 73 shows a configuration of a vapor deposition apparatus for forming an EL layer on an element substrate over which a transistor is formed.
Shown in In this vapor deposition apparatus, a plurality of processing chambers are connected to transfer chambers 190260 and 190261. The treatment chamber includes a load chamber 190262 for supplying a substrate, an unload chamber 190263 for collecting the substrate, a heat treatment chamber 190268, a plasma treatment chamber 190272, a film formation treatment chamber 190269 to 190275 for depositing an EL material, and an EL element. As one electrode, a film formation treatment chamber 19027 for forming aluminum or a conductive film containing aluminum as a main component is formed.
6 is included. Gate valves 190277a to 190277 are provided between the transfer chamber and each processing chamber.
m is provided, and the pressure in each processing chamber can be controlled independently, thereby preventing cross-contamination between the processing chambers.

The substrate introduced into the transfer chamber 190260 from the load chamber 190262 is carried into a predetermined processing chamber by arm-type transfer means 190266 that is rotatably provided. The substrate is transferred from one processing chamber to another processing chamber by the transfer means 190266. The transfer chamber 190260 and the transfer chamber 190261 are connected by a film formation processing chamber 190270, and here, the transfer unit 19026 is connected.
6 and the transfer means 190267 deliver the substrate.

Each processing chamber connected to the transfer chamber 190260 and the transfer chamber 190261 is held in a reduced pressure state. Therefore, in this vapor deposition apparatus, the substrate is continuously subjected to film formation of the EL layer without being exposed to the atmosphere. Since the display panel after the EL layer deposition process may be deteriorated by water vapor or the like, in this vapor deposition apparatus, a sealing process for performing a sealing process before exposure to the atmosphere in order to maintain the quality. A chamber 190265 is connected to the transfer chamber 190261. Since the sealing treatment chamber 190265 is placed under atmospheric pressure or a reduced pressure close thereto, the transfer chamber 1902
An intermediate processing chamber 190264 is also provided between 61 and the sealing processing chamber 190265. The intermediate processing chamber 190264 is provided for transferring the substrate and buffering the pressure between the chambers.

The load chamber, the unload chamber, the transfer chamber, and the film forming chamber are provided with exhaust means for maintaining the chamber at a reduced pressure. As the exhaust means, various vacuum pumps such as a dry pump, a turbo molecular pump, and a diffusion pump can be used.

In the vapor deposition apparatus in FIG. 73, the number of treatment chambers connected to the transfer chamber 190260 and the transfer chamber 190261 and the structure thereof can be combined as appropriate depending on the stacked structure of the EL elements.
An example of the combination is shown below.

In the heat treatment chamber 190268, degassing treatment is performed by first heating the substrate on which the lower electrode, the insulating partition wall, or the like is formed. The plasma treatment chamber 190272 performs rare gas or oxygen plasma treatment on the surface of the base electrode. This plasma treatment is performed to clean the surface, stabilize the surface state, and stabilize the physical or chemical state (eg, work function) of the surface.

The film formation treatment chamber 190269 is a treatment chamber for forming an electrode buffer layer in contact with one electrode of the EL element. The electrode buffer layer has carrier injection properties (hole injection or electron injection),
It is a layer that suppresses the occurrence of short circuits or dark spot defects in EL elements. Typically, the electrode buffer layer is an organic-inorganic mixed material, and has a resistivity of 5 × 10 ⁴ to 1 × 10 ⁶ Ωcm, and 30 to 3
It is formed to a thickness of 00 nm. Note that the film formation chamber 190271 is a treatment chamber in which a hole transport layer is formed.

The structure of the light emitting layer in the EL element differs depending on whether the light emission is monochromatic or white. In the vapor deposition apparatus, it is preferable to arrange the film forming treatment chamber accordingly. For example,
When three types of EL elements having different emission colors are formed on the display panel, it is necessary to form a light emitting layer corresponding to each emission color. In this case, the film formation chamber 190270 is used for forming the first light-emitting layer, and the film formation chamber 190273 is used for forming the second light-emitting layer.
74 can be used for forming the third light-emitting layer. By separating the film formation chamber for each light emitting layer, mutual contamination by different light emitting materials can be prevented, and the throughput of the film formation process can be improved.

Note that three types of EL materials having different emission colors may be sequentially deposited in the film formation chamber 190270, the film formation chamber 190273, and the film formation chamber 190274. In this case, a shadow mask is used, and vapor deposition is performed by shifting the mask in accordance with the region to be vapor deposited.

In the case of forming an EL element that emits white light, light emitting layers having different light emission colors are stacked vertically. Also in that case, the element substrate can be sequentially moved through the film formation chamber to form a film for each light emitting layer. Alternatively, different light emitting layers can be successively formed in the same film formation chamber.

In the deposition treatment chamber 190276, an electrode is deposited over the EL layer. The electrode can be formed by an electron beam evaporation method or a sputtering method, but a resistance heating evaporation method is preferably used.

After the formation of the electrodes, the element substrate passes through the intermediate processing chamber 190264 and the sealing processing chamber 1902.
It is carried into 65. The sealing treatment chamber 190265 is filled with an inert gas such as helium, argon, neon, or nitrogen, and a sealing plate is attached to the element substrate on the side where the EL layer is formed and sealed. Stop. In a sealed state, an inert gas may be filled between the element substrate and the sealing plate, or a resin material may be filled. The sealing process chamber 190265 includes a dispenser for drawing a sealing material, a mechanical element such as a fixed stage or an arm for fixing a sealing plate facing the element substrate, a dispenser for filling a resin material, a spin coater, or the like. It has been.

FIG. 74 shows the internal configuration of the film forming chamber. The film formation chamber is kept under reduced pressure. In FIG. 74, the inside between the top plate 190391 and the bottom plate 190392 is a room, and the room is kept under a reduced pressure.

One or a plurality of evaporation sources are provided in the processing chamber. This is because it is preferable to provide a plurality of evaporation sources when a plurality of layers having different compositions are formed or when different materials are co-evaporated. In FIG. 74, the evaporation sources 190381a, 190381b, and 190381c are attached to the evaporation source holder 190380. The evaporation source holder 190380 is an articulated arm 1
90383. The multi-joint arm 190383
The position of the evaporation source holder 190380 can be freely moved within the movable range. Alternatively, the evaporation source holder 190380 is provided with a distance sensor 190382, and the evaporation source 190381a is provided.
˜190381c and the substrate 190389 may be monitored to control the optimum interval during vapor deposition. In that case, it is good also as an articulated arm which displaces to an articulated arm also in the up-down direction (Z direction).

A substrate stage 190386 and a substrate chuck 190387 are paired to form a substrate 190389.
To fix. The substrate stage 190386 may include a heater so that the substrate 190389 can be heated. The substrate 190389 is fixed to the substrate stage 190386 and carried in and out by the forcible relaxation of the substrate chuck 190387. In vapor deposition, a shadow mask 190390 having an opening corresponding to a vapor deposition pattern can be used as necessary. In that case, the shadow mask 190390 includes the substrate 190389 and the evaporation source 19.
It is arranged between 0381a and 190381c. Shadow mask 190390
Is fixed to the substrate 190389 in close contact with the mask chuck 190388 or at a fixed interval. When the shadow mask 190390 needs to be aligned, the camera is disposed in the processing chamber, and the mask chuck 190388 is provided with positioning means that finely moves in the XY-θ direction, thereby aligning the shadow mask 190390.

The evaporation source 190381 is provided with a deposition material supply means for continuously supplying a deposition material to the evaporation source. The vapor deposition material supply means includes vapor deposition material supply sources 190385a, 190385b, and 190385c arranged at positions distant from the evaporation source 190381, and a material supply pipe 190384 connecting the two. Typically, material sources 190385a, 19038.
5b and 190385c are provided corresponding to the evaporation source 190381. In the case of FIG. 74, the material supply source 190385a and the 1903 evaporation source 81a correspond to each other. Material source 190
The same applies to 385b and the evaporation source 190381b, and the material supply source 190385c and the evaporation source 190381c.

As an evaporation material supply method, an air current conveyance method, an aerosol method, or the like can be applied. In the air current conveyance method, fine powder of vapor deposition material is carried in an air current and is conveyed to the evaporation source 190381 using an inert gas or the like. The aerosol method is vapor deposition performed by conveying a raw material solution in which a vapor deposition material is dissolved or dispersed in a solvent, aerosolizing it with a sprayer, and vaporizing the solvent in the aerosol. In any case, the evaporation source 190381 is provided with a heating unit, and the conveyed evaporation material is evaporated to form a film on the substrate 190389. In the case of FIG. 74, the material supply pipe 190
384 is formed of a thin tube that can be flexibly bent and has rigidity sufficient to prevent deformation even under reduced pressure.

In the case of applying an air current conveyance method or an aerosol method, the film formation may be performed under a reduced pressure of 133 Pa to 13300 Pa in the film formation treatment chamber at atmospheric pressure or lower.
The film formation chamber can be filled with an inert gas such as helium, argon, neon, krypton, xenon, or nitrogen, or the pressure can be adjusted while supplying the gas (while exhausting simultaneously). Note that in the deposition treatment chamber in which the oxide film is formed, a gas such as oxygen or nitrous oxide may be introduced to form an oxidizing atmosphere. Alternatively, a reducing atmosphere may be provided by introducing a gas such as hydrogen into a film formation chamber in which an organic material is deposited.

As another vapor deposition material supply method, a screw may be provided in the material supply pipe 190384 to continuously extrude the vapor deposition material toward the evaporation source.

According to this vapor deposition apparatus, even a large-screen display panel can be continuously formed with good uniformity. Since it is not necessary to replenish the vapor deposition material each time the vapor deposition material runs out of the evaporation source, the throughput can be improved.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

(Embodiment 17)
In this embodiment, an example of an electronic apparatus according to the present invention will be described.

FIG. 75 shows a display panel module in which a display panel 900101 and a circuit board 900111 are combined. A display panel 900101 includes a pixel portion 900102, a scan line driver circuit 900103, and a signal line driver circuit 900104. On the circuit board 900111, for example, a control circuit 900112 and a signal dividing circuit 900113 are formed. The display panel 900101 and the circuit board 900111 are connected by a connection wiring 900114. An FPC or the like can be used for the connection wiring.

In the display panel 900101, a pixel portion 900102 and a part of peripheral driver circuits (a driver circuit having a low operating frequency among the plurality of driver circuits) are formed over a substrate using a transistor, and a part of the peripheral driver circuits (a plurality of peripheral driver circuits) A driver circuit having a high operating frequency) is formed on an IC chip, and the IC chip is formed on a display panel 9001 by COG (Chip On Glass) or the like.
You may implement in 01. Thus, the area of the circuit board 900111 can be reduced, and a small display device can be obtained. Alternatively, the IC chip is TAB (Tape Out).
o Bonding) or a printed circuit board, the display panel 900101 may be mounted. Thus, the area of the display panel 900101 can be reduced, so that a display device with a small frame size can be obtained.

For example, in order to reduce power consumption, a pixel portion is formed using a transistor on a glass substrate, all peripheral drive circuits are formed on an IC chip, and the IC chip is mounted on a display panel by COG or TAB. May be.

With the display panel module shown in FIG. 75, a television receiver can be completed. FIG. 76 is a block diagram illustrating a main configuration of a television receiver. Tuner 900201
Receives video and audio signals. The video signal includes a video signal amplifying circuit 900202, a video signal processing circuit 900203 for converting a signal output from the video signal amplifying circuit 900202 into a color signal corresponding to each color of red, green, and blue, and a driving circuit for the video signal. Is processed by a control circuit 900212 for conversion to the input specification of Control circuit 900212
Outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 900213 may be provided on the signal line side, and an input digital signal may be divided into m pieces (m is a positive integer) and supplied.

Of the signals received by the tuner 900201, the audio signal is the audio signal amplifier circuit 900205.
The output is supplied to the speaker 900207 through the audio signal processing circuit 900206. The control circuit 900208 receives the receiving station (reception frequency) and volume control information from the input unit 9.
In response to the received signal from the signal E00209, the signal is transmitted to the tuner 900201 or the audio signal processing circuit 900206.

A television receiver incorporating a display panel module different from that shown in FIG.
Shown in A). In FIG. 77A, a display screen 9003 housed in a housing 900301.
02 is formed of a display panel module. Note that a speaker 900303, an operation switch 900304, and the like may be provided as appropriate.

FIG. 77B illustrates a television receiver that can carry only a display wirelessly.
A housing and a signal receiver are incorporated in the housing 900312, and the display portion 900313 or the speaker portion 900317 is driven by the battery. Battery is charger 90
In 0310, repeated charging is possible. The charger 900310 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 900312 is controlled by operation keys 900316. Alternatively, the device illustrated in FIG. 77B may be a video / audio bidirectional communication device capable of transmitting a signal from the housing 900312 to the charger 900310 by operating the operation key 900316.
Alternatively, by operating the operation key 900316, a signal is transmitted from the housing 900312 to the charger 900310, and further, a signal that can be transmitted by the charger 900310 is received by another electronic device, thereby controlling communication of the other electronic device. It may be a general purpose remote control device. The present invention can be applied to the display portion 900313.

FIG. 78A shows a module in which a display panel 900401 and a printed wiring board 900402 are combined. A display panel 900401 includes a pixel portion 900403 provided with a plurality of pixels, a first scan line driver circuit 900404, and a second scan line driver circuit 90040.
5 and a signal line driver circuit 900406 for supplying a video signal to a selected pixel.

A printed wiring board 900402 includes a controller 900407, a central processing unit (CPU
) 940408, memory 900409, power supply circuit 900410, audio processing circuit 90041
1 and a transmission / reception circuit 900412 and the like. The printed wiring board 900402 and the display panel 900401 are connected by a flexible wiring board (FPC) 900413. The flexible wiring board (FPC) 9000041 may be provided with a storage capacitor, a buffer circuit, and the like to prevent generation of noise in the power supply voltage or signal and increase in signal rise time. Note that the controller 9000040, the sound processing circuit 9000041, the memory 9000040, the central processing unit (CPU) 900408, the power supply circuit 900410,
The display panel 900401 can be mounted using a COG (Chip On Glass) method. The scale of the printed wiring board 900402 can be reduced by the COG method.

Interface (I / F) unit 900414 provided on the printed circuit board 900402
Various control signals are input and output via the. An antenna port 900415 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 900402.

FIG. 78 (B) shows a block diagram of the module shown in FIG. 78 (A). This module includes a VRAM 900416, a DRAM 9000041, a flash memory 900418, and the like as the memory 900409. The VRAM 900416 stores image data to be displayed on the panel, the DRAM 900417 stores image data or audio data, and the flash memory stores various programs.

The power supply circuit 900410 supplies power for operating the display panel 900401, the controller 900407, the central processing unit (CPU) 9000040, the sound processing circuit 9000041, the memory 9000040, and the transmission / reception circuit 9000041. However, depending on the panel specifications, the power supply circuit 900410 may be provided with a current source.

A central processing unit (CPU) 9000040 includes a control signal generation circuit 900420 and a decoder 90.
0421, a register 900422, an arithmetic circuit 900423, a RAM 900394, an interface (I / F) unit 900419 for a central processing unit (CPU) 9000040, and the like. Central processing unit (CPU) via interface (I / F) unit 900419
Various signals input to 9000040 are temporarily stored in the register 9000042 and then input to the arithmetic circuit 9000042, the decoder 9000042, and the like. The arithmetic circuit 900423 performs an operation based on the input signal and designates a place to send various commands. On the other hand, the decoder 9
The signal input to 00421 is decoded and input to the control signal generation circuit 900420. The control signal generation circuit 900420 generates a signal including various instructions based on the input signal, and a location designated in the arithmetic circuit 9000042, specifically, a memory 9000040,
The data is sent to the transmission / reception circuit 900412, the audio processing circuit 900411, the controller 900407, and the like.

The memory 9000040, the transmission / reception circuit 9000041, the sound processing circuit 9000041, and the controller 900407 operate according to received commands. The operation will be briefly described below.

A signal input from the input unit 9000042 is input to an interface (I / F) unit 90041.
Central processing unit (CPU) 9004 mounted on a printed wiring board 900402 via 4
Sent to 08. The control signal generation circuit 900420 converts the image data stored in the VRAM 900416 into a predetermined format according to the signal sent from the input device 9000042 such as a pointing device or a keyboard, and sends it to the controller 900407.

The controller 900407 is a central processing unit (CPU) 9004 in accordance with the specifications of the panel.
Data processing is performed on a signal including image data sent from 08, and a display panel 90040 is processed.
1 is supplied. Based on the power supply voltage input from the power supply circuit 900410 or various signals input from the central processing unit (CPU) 9000040, the controller 900407
A sync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R are generated and supplied to the display panel 900401.

In the transmission / reception circuit 9000041, a signal transmitted / received as a radio wave in the antenna 9000042 is processed. Specifically, an isolator, a band pass filter, a VCO (Volt)
age Controlled Oscillator), LPF (Low Pass)
A high frequency circuit such as a filter), a coupler, or a balun may be included. Transmission / reception circuit 90
Of the signals transmitted and received in 0412, a signal including audio information is sent to the central processing unit (CPU).
) Is sent to the audio processing circuit 900411 according to the command from 900408.

A signal including audio information sent in accordance with a command from a central processing unit (CPU) 9000040 is demodulated into an audio signal in an audio processing circuit 9000041 and is sent to a speaker 9000042. The audio signal sent from the microphone 9000042 is modulated in the audio processing circuit 9000041 and is sent to the transmission / reception circuit 900412 in accordance with a command from the central processing unit (CPU) 9000040.

Controller 9000040, central processing unit (CPU) 9000040, power supply circuit 90041
0, the audio processing circuit 900411 and the memory 9000040 can be mounted as a package of this embodiment.

Of course, the present embodiment is not limited to a television receiver, and is used for various applications as a display medium with a particularly large area such as a monitor of a personal computer, an information display board at a railway station or airport, and an advertisement display board in a street. Can be applied.

Next, a configuration example of the mobile phone according to the present invention will be described with reference to FIG.

The display panel 900501 is incorporated in a housing 900530 so as to be detachable. The shape or dimension of the housing 900530 can be changed as appropriate in accordance with the size of the display panel 900501. A housing 900530 to which the display panel 900501 is fixed is fitted into the printed circuit board 900531 and assembled as a module.

The display panel 900501 is connected to the printed circuit board 900531 through the FPC 900531. A printed circuit board 900531 includes a speaker 900532 and a microphone 90.
0533, transmission / reception circuit 900534, signal processing circuit 9 including CPU and controller
00535 is formed. Such a module is combined with the input means 900566 and the battery 900577 and stored in the housing 9000053. Display panel 900501
The pixel portion is arranged so as to be visible from an opening window formed in the housing 900500.

In the display panel 900501, a pixel portion and some peripheral driver circuits (a driver circuit having a low operating frequency among a plurality of driver circuits) are formed over a substrate using transistors, and some peripheral driver circuits (a plurality of driver circuits) are formed. The driving circuit having a high operating frequency is formed on the IC chip, and the IC
The chip may be mounted on the display panel 900501 by COG (Chip On Glass). Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Auto Bonding) or a printed circuit board. With such a structure, the power consumption of the display device can be reduced, and the usage time by one charge of the mobile phone can be extended. Cost reduction of the mobile phone can be achieved.

The mobile phone shown in FIG. 79 has a function of displaying various information (still images, moving images, text images, and the like). It has a function of displaying a calendar, date or time on the display unit. It has a function of operating or editing information displayed on the display unit. It has a function of controlling processing by various software (programs). Has a wireless communication function. It has a function of making a call with another mobile phone, a fixed phone, or a voice communication device using a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. The vibrator operates in response to an incoming call, data reception, or alarm. It has a function to generate a sound in response to an incoming call, reception of data, or an alarm. Note that the function of the mobile phone shown in FIG. 79 is not limited to this,
It can have various functions.

The cellular phone shown in FIG. 80 includes operation switches 9000060 and a microphone 9000060.
A main body (A) 9000060 provided with a display panel (A) 900068, a display panel (B) 900609, a main body (B) 9000060 provided with a speaker 9000060, etc.
2 are connected to each other by a hinge 900610 so as to be opened and closed. Display panel (A) 9000060
And the display panel (B) 9000060 together with the circuit board 9000060 main body (B) 9000060
2 in the second housing 900603. The pixel portions of the display panel (A) 900608 and the display panel (B) 900609 are arranged so as to be visible from an opening window formed in the housing 900603.

The display panel (A) 900608 and the display panel (B) 900609
Specifications such as the number of pixels can be set as appropriate in accordance with the 0600 function. For example, the display panel (A) 900608 can be combined as a main screen and the display panel (B) 900609 can be combined as a sub-screen.

The mobile phone according to the present embodiment can be transformed into various modes depending on the function or application. For example, a mobile phone with a camera may be provided by incorporating an image sensor at the hinge 900610. Even when the operation switches 9000060, the display panel (A) 900068, and the display panel (B) 900609 are housed in one housing, the above-described effects can be obtained. Even if the configuration of the present embodiment is applied to an information display terminal having a plurality of display units, the same effect can be obtained.

The mobile phone shown in FIG. 80 has a function of displaying various information (still images, moving images, text images, and the like). It has a function of displaying a calendar, date or time on the display unit. It has a function of operating or editing information displayed on the display unit. It has a function of controlling processing by various software (programs). Has a wireless communication function. It has a function of making a call with another mobile phone, a fixed phone, or a voice communication device using a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. The vibrator operates in response to an incoming call, data reception, or alarm. It has a function to generate a sound in response to an incoming call, reception of data, or an alarm. Note that the function of the mobile phone shown in FIG. 80 is not limited to this,
It can have various functions.

The present invention can be applied to various electronic devices. Specifically, it can be applied to a display portion of an electronic device. Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games) Image reproducing apparatus (specifically, D) provided with a recording medium.
a device equipped with a display capable of reproducing a recording medium such as a digital Versatile Disc (DVD) and displaying the image).

FIG. 81A shows a display, which includes a housing 900711, a support base 900712, and a display portion 9.
And the like. The display shown in FIG. 81A displays various information (still images, moving images,
A text image or the like) on the display unit. Note that the function of the display illustrated in FIG. 81A is not limited to this, and the display can have a variety of functions.

FIG. 81B shows a camera, which includes a main body 900721, a display portion 900722, and an image receiving portion 9007.
23, an operation key 900724, an external connection port 900725, a shutter 900726, and the like. The camera illustrated in FIG. 81B has a function of shooting a still image. Has a function to shoot movies. It has a function of automatically correcting captured images (still images, moving images). It has a function of storing captured images in a recording medium (externally or built in a digital camera). It has a function of displaying a photographed image on the display unit. Note that the function of the camera illustrated in FIG. 81B is not limited to this, and the camera can have a variety of functions.

FIG. 81C illustrates a computer, which includes a main body 900731, a housing 900732, and a display portion 90.
0733, a keyboard 900734, an external connection port 900735, a pointing device 900736, and the like. The computer illustrated in FIG. 81C can store various information (still images,
Video, text image, etc.) on the display unit. It has a function of controlling processing by various software (programs). It has a communication function such as wireless communication or wired communication. It has a function of connecting to various computer networks using a communication function. It has a function of transmitting or receiving various data using a communication function. Note that the function of the computer illustrated in FIG. 81C is not limited to this, and can have various functions.

FIG. 81D illustrates a mobile computer, which includes a main body 900741, a display portion 900742,
A switch 900074, an operation key 9000074, an infrared port 9000074, and the like are included. A mobile computer illustrated in FIG. 81D has a function of displaying various information (such as a still image, a moving image, and a text image) on a display portion. The display unit has a touch panel function. The display unit has a function of displaying a calendar, date or time. It has a function of controlling processing by various software (programs). Has a wireless communication function. It has a function of connecting to various computer networks using a wireless communication function. It has a function of transmitting or receiving various data using a wireless communication function. Note that the function of the mobile computer illustrated in FIG. 81D is not limited to this, and the mobile computer can have a variety of functions.

FIG. 81E shows a portable image reproducing device (eg, a DVD reproducing device) provided with a recording medium, which includes a main body 900711, a housing 9000075, a display portion A90073, and a display portion B9007.
54, a recording medium (DVD or the like) reading unit 900755, an operation key 9000075, a speaker unit 900777, and the like. The display portion A90073 can mainly display image information, and the display portion B900743 can mainly display character information.

FIG. 81F shows a goggle type display, which includes a main body 900761 and a display portion 900762.
, Earphone 900763 and support portion 900764. The goggle type display shown in FIG. 81F has a function of displaying images (still images, moving images, text images, and the like) acquired from the outside on a display portion. Note that the function of the goggle display illustrated in FIG. 81F is not limited thereto, and the display can have a variety of functions.

FIG. 81G shows a portable game machine, which includes a housing 900771, a display portion 900772, a speaker portion 900773, operation keys 900774, a storage medium insertion portion 900775, and the like. A portable game machine in which the display device of the present invention is used for the display portion 900772 can express bright colors. A portable game machine shown in FIG. 81G has a function of reading a program or data recorded in a recording medium and displaying the program or data on a display portion. It has a function of sharing information by performing wireless communication with other portable game machines. Note that the function of the portable game machine illustrated in FIG. 81G is not limited to this, and can have a variety of functions.

FIG. 81H shows a digital camera with a television receiving function, which includes a main body 900781, a display portion 9
00782, operation key 900783, speaker 900784, shutter 900785
, An image receiving unit 9000078, an antenna 9000078 and the like. A digital camera with a television receiver shown in FIG. 81H has a function of shooting a still image. Has a function to shoot movies. It has a function to automatically correct a photographed image. It has a function of acquiring various information from the antenna. It has a function of storing captured images or information acquired from an antenna. It has a function of displaying a captured image or information acquired from an antenna on a display unit. Note that FIG.
The function of the digital camera with a television receiver shown in 1 (H) is not limited to this, and various functions can be provided.

As shown in FIGS. 81A to 81E, an electronic device according to the present invention has a display portion for displaying some information. The electronic device according to the present invention can reduce the operation frequency of the circuit by storing the data in the memory when the data is duplicated, so that the power consumption is small and the battery can be driven for a long time. is there.

Next, application examples of the semiconductor device according to the present invention will be described.

FIG. 82 shows an example in which the semiconductor device according to the present invention is provided integrally with a building. FIG.
2 is a casing 900810, a display portion 900811, and a remote control device 900812 that is an operation portion.
, Speaker portion 9000081 and the like. The semiconductor device according to the present invention is integrated with a building as a wall-hanging type, and can be installed without requiring a large installation space.

FIG. 83 shows another example in which the semiconductor device according to the present invention is provided integrally with a building. The display panel 900901 is integrally attached to the unit bath 900902, so that the bather can view the display panel 900901. Display panel 99011
Has a function of displaying information when operated by a bather. It has a function that can be used as an advertising or entertainment means.

Note that the semiconductor device according to the present invention can be installed not only on the side wall of the unit bus 900902 shown in FIG. For example, a part of the mirror surface or the bathtub itself may be integrated. At this time, the shape of the display panel 900901 may be adapted to the shape of the mirror surface or the bathtub.

FIG. 84 shows another example in which the semiconductor device according to the present invention is provided integrally with a building.
The display panel 901002 is attached so as to be curved according to the curved surface of the columnar body 901001. Here, the columnar body 901001 is described as a utility pole.

A display panel 901002 shown in FIG. 84 is provided at a position higher than the human viewpoint. By installing the display panel 901002 on a building that is repeatedly forested outdoors such as an electric pole, an advertisement can be made to an unspecified number of viewers. Here, the display panel 901002
Since it is easy to display the same image and to switch the image instantly by control from the outside, extremely efficient information display and advertising effect can be expected. Display panel 9
By providing a self-luminous display element at 01002, it can be said that it is useful as a display medium with high visibility even at night. By installing it on the utility pole, it is easy to secure the power supply means of the display panel 901002. In the event of an emergency such as a disaster, it can also be a means of quickly and accurately communicating information to the victims.

Note that as the display panel 901002, for example, a display panel which displays an image by providing a switching element such as an organic transistor on a film-like substrate and driving the display element can be used.

In this embodiment, a wall, a columnar body, and a unit bus are taken as an example of a building, but this embodiment is not limited to this, and the semiconductor device according to the present invention can be installed in various buildings. .

Next, an example in which the semiconductor device according to the present invention is provided integrally with a moving body will be described.

FIG. 85 is a diagram showing an example in which the semiconductor device according to the present invention is provided integrally with an automobile. The display panel 901102 is attached integrally with the vehicle body 901101 of the automobile, and can display the operation of the vehicle body or information input from inside and outside the vehicle body on demand. Note that a navigation function may be provided.

Note that the semiconductor device according to the present invention can be installed not only in the vehicle body 901101 shown in FIG. For example, glass windows, doors, handles, shift levers,
You may unite with a seat sheet, a room mirror, etc. At this time, the shape of the display panel 901102 may be adapted to the shape of the object to be installed.

FIG. 86 is a diagram showing an example in which the semiconductor device according to the present invention is provided integrally with a train car.

FIG. 86A is a diagram showing an example in which a display panel 901202 is provided on the glass of a door 901201 of a train car. Compared to conventional paper advertisements, there is an advantage that labor costs required for advertisement switching are not incurred. Since the display panel 901202 can instantaneously switch the image displayed on the display unit in response to an external signal, for example, the display panel image is switched every time period when the customer base of the passengers on the train changes. More effective advertising effect can be expected.

FIG. 86 (b) shows a glass window 901203, in addition to the glass of the door 901201 of the train car.
FIG. 10 illustrates an example in which a display panel 901202 is provided on a ceiling 901204. As described above, since the semiconductor device according to the present invention can be easily installed in a place where it has been difficult to install conventionally, an effective advertising effect can be obtained. Since the semiconductor device according to the present invention can instantaneously switch an image displayed on the display unit by an external signal, the cost and time at the time of advertisement switching can be reduced, and more flexible advertisement operation. And information transmission is possible.

Note that the semiconductor device according to the present invention includes the door 901201 and the glass window 9012 shown in FIG.
03 and the ceiling 901204 can be installed in various places. For example, it may be integrated with a strap, a seat, a rail, a floor or the like. At this time, the display panel 90
The shape of 1202 may be adapted to the shape of the object to be installed.

FIG. 87 is a diagram showing an example in which the semiconductor device according to the present invention is provided integrally with a passenger airplane.

FIG. 87 (a) shows a display panel 901302 on a ceiling 901301 above the seat of a passenger airplane.
It is the figure shown about the shape at the time of use when providing. The display panel 901302 is integrally attached via a ceiling 901301 and a hinge part 901303, and the hinge part 9
The passenger can view the display panel 901302 by the expansion and contraction of 01303. A display panel 901302 has a function of displaying information when operated by a passenger. It has a function that can be used as an advertising or entertainment means. As shown in FIG. 87 (b), the hinge portion is bent to remove the ceiling 9
By storing it in 01301, it is possible to consider safety during takeoff and landing. In addition, by turning on the display element of the display panel in an emergency, it can be used as an information transmission means and a guide light.

Note that the semiconductor device according to the present invention can be installed not only in the ceiling 901301 shown in FIG. 87 but also in various places. For example, it may be integrated with a seat seat, a seat table, an armrest, a window and the like. A large display panel that can be viewed simultaneously by a large number of people may be installed on the wall of the aircraft. At this time, the shape of the display panel 901302 may be adapted to the shape of the object to be installed.

In the present embodiment, the moving body is exemplified as a train car body, an automobile body, and an airplane body, but is not limited to this. A motorcycle, an automobile (including an automobile, a bus, etc.),
It can be installed on various things such as trains (including monorails, railways, etc.) and ships. Since the semiconductor device according to the present invention can instantaneously switch the display of the display panel in the moving body by an external signal, the moving body can be mounted by installing the semiconductor device according to the present invention in the moving body. Advertising display board for an unspecified number of customers, information display board at the time of disaster,
It can be used for such applications.

In the present embodiment, various drawings have been used, but the contents described in each drawing (
May be applied to, combined with, the content described in another figure (may be part)
Alternatively, replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to and combined with the contents (may be a part) described in the drawings of another embodiment and examples. Or can be freely replaced. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each embodiment with a portion of another embodiment and an example.

Note that in this embodiment, the contents described in other embodiments and examples (may be a part)
Example when embodied, example when slightly modified, example when partially changed, example when improved, example when described in detail, example when applied, example with related parts And so on. Therefore, the contents described in other embodiment modes and examples can be freely applied to, combined with, or replaced with this embodiment mode.

In this embodiment, a more specific structure of the signal line driver circuit included in the display device illustrated in FIG. 1 is described.

FIG. 14 shows a circuit diagram of a signal line driver circuit as an example. The signal line driver circuit illustrated in FIG. 14 includes a shift register 501, a sampling circuit 502, a first latch 503, a second latch 504, a third latch 505, a level shifter 506, and a buffer 507. doing. In this embodiment, the first latch 503 and the second latch 504 are used as memory circuits.
In addition, a signal line driver circuit having three latches of the third latch 505 is given as an example.
The number of memory circuits is not limited to this.

The shift register 501 has a plurality of delay flip-flops (DFF) 508. The shift register 501 generates a timing signal in which the pulses are sequentially shifted in accordance with the input start pulse signal S-SP and the clock signal S-CLK, and inputs the timing signal to the subsequent sampling circuit 502.

The sampling circuit 502 has a plurality of storage elements (LAT) 509. The sampling circuit 502 sequentially samples the video signal in accordance with the pulse of the input timing signal, and writes the sampled video signal data in the storage element 509.

The first latch 503 includes a plurality of storage elements (LAT) 510, the second latch 504 includes a plurality of storage elements (LAT) 511, and the third latch 505 includes a plurality of storage elements (LAT).
) 512. The number of the memory elements 510, the memory elements 511, and the memory elements 512 is preferably the same as or larger than the number of pixels in one line in the pixel portion.

The first latch 503 is supplied with a write latch signal WS ₁ and a read latch signal RS ₁ . The second latch 504 receives a write latch signal WS ₂ and a read latch signal RS ₂ . The third latch 505 has a write latch signal WS ₃
And reading latch signal RS ₃ is input.

Data written to the memory element 509 in the sampling circuit 502 is written to the memory element 510 included in the first latch 503, the memory element 511 included in the second latch 504, or the memory element 512 included in the third latch 505, Retained. Storage element 510,
Data write to the memory element 511 or the memory element 512 is performed by a write latch signal W
It is controlled by S ₁ to WS _3.

The data held in the memory element 510, the memory element 511, or the memory element 512 is input as a video signal to the level shifter 506 in the subsequent stage as a video signal.
Input of the video signal to the level shifter 506 is controlled by read latch signals RS _{1 to} RS ₃ .

The level shifter 506 controls the amplitude of the voltage of the input video signal and inputs it to the subsequent buffer 507. The buffer 507 shapes the waveform of the input video signal and inputs it to the pixel portion.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

In this embodiment, a more specific structure of the signal line driver circuit included in the display device illustrated in FIG. 12 is described.

FIG. 15 shows a circuit diagram of a signal line driver circuit as an example. The signal line driver circuit illustrated in FIG. 15 includes a shift register 601, a sampling circuit 602, a first latch 603, a second latch 604, a third latch 605, and a DA converter circuit 606. Yes. In this embodiment, the first latch 603, the second latch 604, and the third latch 6 are used as memory circuits.
Although the signal line driver circuit having three latches 05 is taken as an example, the number of memory circuits is not limited to this.

The shift register 601 includes a plurality of delay flip-flops (DFF) 608. The shift register 601 generates a timing signal in which pulses are sequentially shifted in accordance with the input start pulse signal S-SP and the clock signal S-CLK, and inputs the timing signal to the subsequent sampling circuit 602.

The sampling circuit 602 has a plurality of storage elements (LAT) 609. Memory element 6
The number 09 is preferably the same as or larger than the number of pixels in one line in the pixel portion multiplied by the number of bits of the video signal. FIG. 15 illustrates the case where the number of bits of the video signal is 3, but the number of bits of the video signal is not limited to this. The sampling circuit 602 sequentially samples the video signal according to the pulse of the input timing signal, and writes the sampled video signal data in the storage element 609.

The first latch 603 includes a plurality of storage elements (LAT) 610, the second latch 604 includes a plurality of storage elements (LAT) 611, and the third latch 605 includes a plurality of storage elements (LAT).
) 612. The number of storage elements 610, storage elements 611, and storage elements 612 is preferably equal to or greater than the number of pixels in one line multiplied by the number of bits of the video signal.

The first latch 603 receives the write latch signal WS ₁ and the read latch signal RS ₁ . The second latch 604 receives the write latch signal WS ₂ and the read latch signal RS ₂ . The third latch 605 has a write latch signal WS ₃
And reading latch signal RS ₃ is input.

Data written to the memory element 609 in the sampling circuit 602 is written to the memory element 610 included in the first latch 603, the memory element 611 included in the second latch 604, or the memory element 612 included in the third latch 605. Retained. Storage element 610,
Data write to the memory element 611 or the memory element 612 is performed by a write latch signal W.
It is controlled by S ₁ to WS _3.

Data held in the memory element 610, the memory element 611, or the memory element 612 is input as a video signal to the DA converter circuit 606 in the subsequent stage as a video signal.
The input of the video signal to the DA conversion circuit 606 is controlled by read latch signals RS _{1 to} RS ₃ . The DA conversion circuit 606 converts the input digital video signal into an analog signal, and inputs the analog signal to a subsequent pixel portion.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

In this embodiment, a structure of a memory element in a memory circuit included in the display device of the present invention will be described.

FIG. 20 shows a circuit diagram of a memory element as an example. FIG. 20 illustrates the configuration of the memory elements 801 to 803 included in each of the three memory circuits. A storage element 802 is connected to the subsequent stage of the storage element 801, and a storage element 803 is connected to the subsequent stage of the storage element 802. Note that FIG. 12 shows one memory element included in each memory circuit, but in reality, each memory circuit includes a number of memory elements equal to or larger than the number of pixels included in one line. It has been. In addition, when a video signal is converted from digital to analog in the signal line driver circuit, each storage device has a number of storage elements equal to or larger than the number of pixels of one line multiplied by the number of bits of the video signal. Provide in the circuit.

A write latch signal WS ₁ and a read latch signal RS ₁ are input to the memory element 801. The memory element 802 has a write latch signal WS ₂ and a read latch signal R.
S ₂ is input. A write latch signal WS ₃ and a read latch signal RS ₃ are input to the memory element 803.

In FIG. 20, since the memory elements 801 to 803 have the same circuit configuration, the memory element 80
Taking 1 as an example, the configuration of each memory element will be described in more detail.

The memory element 801 includes clocked inverters 804 and 806, an inverter 805, and a switch circuit 807. The operations of the clocked inverters 804 and 806 are controlled by a write latch signal WS ₁ input to the clocked inverters 804 and 806. The sampled video signal is input to the clocked inverter 804 from the sampling circuit. The output of the clocked inverter 804 is supplied to the inverter 805. The inverter 805 and the clocked inverter 806 form a flip-flop circuit by giving one output to one input. The output of the inverter 805 is supplied to a subsequent stage of the memory circuit, for example, a signal line of a pixel portion, a DA converter circuit, or the like via a switch circuit 807.

The operation of the switch circuit 807 is controlled by a read latch signal RS ₁ input to the switch circuit 807. FIG. 20 illustrates an example in which the switch circuit 807 includes a transmission gate 808 and an inverter 809. Transmission gate 8
The 08, a read latch signal RS _1, and a read latch signal RS ₁ which is inverted by the inverter 809 is input, the switching of the transmission gate 808 is controlled by these signals.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

In this embodiment, a structure of a pixel portion included in an active matrix light-emitting device which is one of display devices of the present invention will be described.

In an active matrix light-emitting device, each pixel is provided with a light-emitting element corresponding to a display element. Since the light emitting element emits light by itself, the visibility is high, the backlight necessary for the liquid crystal display device is not necessary, and it is optimal for thinning, and the viewing angle is not limited. In this embodiment, an organic light emitting element (OLED: Organic Light Emitting) which is one of the light emitting elements.
Although a light emitting device using Diode) will be described, the present invention may be a light emitting device using another light emitting element.

OLEDs emit luminescence generated by applying an electric field.
a layer containing a material (hereinafter referred to as an electroluminescent layer), an anode layer, and a cathode layer. Electroluminescence includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. Any one of the emitted light may be used, or both of the emitted light may be used.

An enlarged view of the pixel portion 301 of the light emitting device of this embodiment is shown in FIG. The pixel portion 301 has a plurality of pixels 304 arranged in a matrix. S1 to Sx are signal lines, V1.
˜Vx corresponds to a power supply line, and G1 to Gy correspond to scanning lines. In the present example, the pixel 304 has signal lines S1 to Sx, power supply lines V1 to Vx, and scanning lines G1 to Gy one by one.

An enlarged view of the pixel 304 is shown in FIG. In FIG. 16B, reference numeral 305 denotes a switching transistor. The gate electrode of the switching transistor 305 is connected to the scanning line Gj (j = 1 to y). One of the source region and the drain region of the switching transistor 305 is connected to the signal line Si (i = 1 to x), and the other is connected to the gate electrode of the driving transistor 306. A storage capacitor 308 included in each pixel is provided between the power supply line Vi (i = 1 to x) and the gate electrode of the driving transistor 306.

The storage capacitor 308 is provided to hold the gate voltage (potential difference between the gate electrode and the source region) of the driving transistor 306 when the switching transistor 305 is off. Note that although a configuration in which the storage capacitor 308 is provided is shown in this embodiment, the present invention is not limited to this configuration, and the storage capacitor 308 may not be provided.

One of the source region and the drain region of the driving transistor 306 is the power source line Vi (
i = 1 to x), and the other is connected to the light emitting element 307. Light emitting element 307
Consists of an anode and a cathode, and an electroluminescent layer provided between the anode and the cathode. When the anode is connected to the source region or the drain region of the driving transistor 306, the anode serves as a pixel electrode and the cathode serves as a counter electrode. On the other hand, when the cathode is connected to the source region or the drain region of the driving transistor 306, the cathode serves as the pixel electrode and the anode serves as the counter electrode.

A predetermined voltage is applied to each of the counter electrode of the light emitting element 307 and the power supply line Vi.

When the scanning line Gj is selected according to the pulse of the selection signal input to the scanning lines G1 to Gy from the scanning line driving circuit, in other words, when the pixel 304 of the line corresponding to the scanning line Gj is selected, the pixel of the line In 304, the switching transistor 305 whose gate electrode is connected to the scanning line Gj is turned on. When a video signal is input to the signal line Si, the gate voltage of the driving transistor 306 is determined according to the voltage of the video signal. When the driving transistor 306 is turned on, the power supply line Vi and the light emitting element 307 are electrically connected, and the light emitting element 307 emits light by supplying current. On the other hand, when the driving transistor 306 is turned off, the power supply line Vi and the light emitting element 307 are not electrically connected, so that no current is supplied to the light emitting element 307 and the light emitting element 307 does not emit light.

Note that the switching transistor 305 and the driving transistor 306 can be either n-channel transistors or p-channel transistors. However, in the case where the source region or the drain region of the driving transistor 306 is connected to the anode of the light-emitting element 307, the driving transistor 306 is preferably a p-channel transistor. In the case where the source region or the drain region of the driving transistor 306 is connected to the cathode of the light-emitting element 307, the driving transistor 306 is preferably an n-channel transistor.

The switching transistor 305 and the driving transistor 306 may have a multi-gate structure such as a double gate structure or a triple gate structure instead of a single gate structure.

Note that the present invention can be applied not only to the circuit configuration shown in FIG. 16 but also to a display device having pixels having various circuit configurations. The pixel included in the display device of the present invention includes, for example, a threshold correction type circuit configuration that can correct the threshold voltage of the driving transistor, and a current input type that can correct the threshold and mobility of the driving transistor by inputting current. It may have a circuit configuration or the like.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

In this embodiment, a structure of a pixel portion included in an active matrix liquid crystal display device which is one of display devices of the present invention will be described.

An enlarged view of the pixel portion 401 of the light emitting device of this embodiment is shown in FIG. In FIG. 17, the pixel portion 401 is provided with a plurality of pixels 402 in a matrix. S1 to Sx correspond to signal lines, and G1 to Gy correspond to scanning lines. In this example, the pixel 304 includes signal lines S1 to Sx,
One scanning line G1 to Gy is provided.

The pixel 402 includes a transistor 403 functioning as a switching element, a liquid crystal cell 404 corresponding to a display element, and a storage capacitor 405. The liquid crystal cell 404 has a pixel electrode, a counter electrode, and a liquid crystal taught between the pixel electrode and the counter electrode. The gate electrode of the transistor 403 is connected to the scanning line Gj (j = 1 to y), and the transistor 40
One of the three source regions or drain regions is connected to the signal line Si (i = 1 to x), and the other is connected to the pixel electrode of the liquid crystal cell 404. One of the two electrodes of the storage capacitor 405 is connected to the pixel electrode of the liquid crystal cell 404 and the other is connected to the common electrode. The common electrode may be connected to the counter electrode of the liquid crystal cell 404, or may be connected to another scanning line.

When the scanning line Gj is selected according to the pulse of the selection signal input to the scanning lines G1 to Gy from the scanning line driving circuit, in other words, when the pixel 402 of the line corresponding to the scanning line Gj is selected, the pixel of the line In transistor 402, the gate electrode is connected to the scanning line Gj.
03 turns on. When a video signal is input from the signal line driving circuit to the signal line Si,
A voltage is applied between the pixel electrode and the counter electrode of the liquid crystal cell 404 in accordance with the voltage of the video signal. The transmittance of the liquid crystal cell 404 is determined according to the value of the voltage applied between the pixel electrode and the counter electrode. The voltage between the pixel electrode and the counter electrode of the liquid crystal cell 404 is the storage capacitor 405.
Held in.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

In this embodiment, timing for inputting a video signal to a pixel portion within one frame period will be described with reference to FIG.

FIG. 13A is a timing chart showing the timing at which a video signal is input to the pixel portion in the case where the operation is performed by dividing one frame period into a plurality of subframe periods SF1 to SF6. The horizontal axis represents time, and the vertical axis represents the scanning direction of the line selected by the scanning line driving circuit. FIG. 13A shows an example in which a 6-bit video signal is used and one frame period is divided into six subframe periods that are the same number as the number of bits. However, in the present invention, the number of bits of the video signal is not limited to six.

The subframe periods SF1 to SF6 each have a writing period Ta for inputting a video signal to each pixel. In the writing period Ta, the pixels on each line are sequentially selected by the scanning line driving circuit. Then, a video signal is input from the signal line driver circuit to the pixels of the selected line. Then, display is performed in accordance with the video signal in order from the pixel of the line where the input of the video signal is completed. When the input of the video signal in the pixels of all lines is completed, the writing period ends. Note that since a video signal for 1 bit is input to the pixel portion in one writing period, all the 6-bit video signals are input for the first time after the writing period Ta is completed.

When one writing period ends, display is continued according to the video signal input to the pixel portion until the writing period of the next subframe period appears. Next, a writing period corresponding to another subframe period appears, and the above operation is repeated. All subframe periods appear in order to form one frame period.

When all subframe periods within one frame period appear, an image having a gradation can be displayed. The number of gradations can be determined by controlling the luminance of the display element in each subframe period. For example, when 64 gradations are displayed with a 6-bit video signal, if the number of gradations is changed linearly, the ratio of the lengths of the subframe periods SF1 to SF6 is set to 2 ⁵ : 2 ⁴ : 2 in order from the longest. ^{3: 2 2:} 2 1: ^{2 0} to.

Note that in the above operation, the luminance of the display element included in the pixel is controlled in accordance with the video signal; however, the present invention is not limited to this structure. For example, a non-display period in which the luminance of the display element is forcibly set to the lowest state regardless of the video signal may be provided. Note that the non-display period is not necessarily provided. However, if the length of the subframe period is shorter than the writing period,
It is necessary to provide a non-display period as described above. By providing the non-display period, it is not necessary to input a video signal in parallel to two or more rows of pixels in the pixel portion.

Note that one subframe period may be further divided into a plurality of parts for operation. in this case,
Each divided subframe period also has a writing period Ta.

Next, a case where only one writing period Ta appears in one frame period will be described.
FIG. 13B is a timing chart showing timing for inputting a video signal to the pixel portion. The horizontal axis represents time, and the vertical axis represents the scanning direction of the line selected by the scanning line driving circuit.

In FIG. 13B, pixels in each line are sequentially selected by the scan line driver circuit in the writing period Ta. Then, an analog video signal is input from the signal line driver circuit to the pixels of the selected line. In the writing period Ta, display is performed in accordance with the video signal in order from the pixel of the line where the input of the video signal is completed. When the input of the video signal in the pixels of all lines is completed, the writing period ends. Next, in accordance with the video signal input to the pixel portion in the writing period Ta, display is performed until the next frame period appears.

Note that in FIG. 13B, the length of the writing period Ta can be set as appropriate by the designer as long as it fits within one frame period. By making the writing period Ta as long as one frame period, the driving frequency of the signal line driver circuit at the time of writing a video signal can be reduced, and the power consumption can also be reduced.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

In this embodiment, a light-emitting device which is one of display devices of the present invention will be described as an example, and the appearance will be described with reference to FIG. FIG. 18A is a top view of a panel in which a transistor and a light-emitting element formed over a first substrate are sealed with a sealant between a first substrate and a second substrate.
FIG. 18B corresponds to a cross-sectional view taken along a line AA ′ in FIG.

A sealant 4020 is provided so as to surround the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004 provided over the first substrate 4001. Further, the second substrate 40 is formed over the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004.
06 is provided. Therefore, the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004 are provided between the first substrate 4001 and the second substrate 4006.
20 is sealed together with the filler 4007.

Further, the pixel portion 4002, the signal line driver circuit 4003, and the scan line driver circuit 4004 provided over the first substrate 4001 each include a plurality of transistors. FIG. 18B illustrates a transistor 4008 included in the signal line driver circuit 4003, and a driving transistor 4009 and a switching transistor 4010 included in the pixel portion 4002.

In the light-emitting element 4011, part of the wiring 4017 connected to the source region or the drain region of the driving transistor 4009 is used as the pixel electrode. In addition to the pixel electrode, the light emitting element 4011 includes a counter electrode 4012 and an electroluminescent layer 4013. Note that the structure of the light-emitting element 4011 is not limited to the structure shown in this embodiment. Light emitting element 4011
The structure of the light-emitting element 4011 can be changed as appropriate depending on the direction of light extracted from the light-emitting element, the polarity of the driving transistor 4009, and the like.

Further, various signals and voltages supplied to the signal line driver circuit 4003, the scan line driver circuit 4004, or the pixel portion 4002 are not shown in the cross-sectional view of FIG. 18B, but are connected through lead wirings 4014 and 4015. It is supplied from the connection terminal 4016.

In this embodiment, the connection terminal 4016 is formed of the same conductive film as the counter electrode 4012 included in the light emitting element 4011. The lead wiring 4014 is formed from the same conductive film as the wiring 4017. The lead wiring 4015 is formed of the same conductive film as the gate electrodes of the driving transistor 4009, the switching transistor 4010, and the transistor 4008.

The connection terminal 4016 is electrically connected to a terminal included in the FPC 4018 through an anisotropic conductive film 4019.

Note that as the first substrate 4001 and the second substrate 4006, glass, metal (typically stainless steel), ceramic, or plastic can be used. However, the light emitting element 401
The second substrate 4006 positioned in the direction in which the light from 1 is extracted must have a light-transmitting property. Therefore, the second substrate 4006 is preferably formed using a light-transmitting material such as a glass plate, a plastic plate, a polyester film, or an acrylic film.

Further, as the filler 4007, an ultraviolet curable resin or a thermosetting resin can be used in addition to an inert gas such as nitrogen or argon. In this embodiment, an example in which nitrogen is used as the filler 4007 is shown.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

Since the display device of the present invention can reduce power consumption, a display unit included in a portable electronic device that is used while being supported by a hand, such as a mobile phone, a portable game machine, an electronic book, a video camera, or a digital still camera. Ideal for use as.

Other electronic devices that can use the display device of the present invention include a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio, audio component, etc.), a notebook type personal computer, and a recording medium. An image reproducing apparatus (typically, an apparatus having a display capable of reproducing a recording medium such as a DVD: Digital Versatile Disc and displaying the image). Specific examples of these electronic devices are shown in FIGS.

FIG. 19A illustrates a mobile phone, which includes a main body 2101, a display portion 2102, and a voice input portion 2103.
A voice output unit 2104 and operation keys 2105. By using the display device of the present invention for the display portion 2102, a mobile phone capable of suppressing power consumption can be obtained.

FIG. 19B illustrates a video camera, which includes a main body 2601, a display portion 2602, a housing 2603,
External connection port 2604, remote control receiving unit 2605, image receiving unit 2606, battery 260
7, a voice input unit 2608, operation keys 2609, an eyepiece unit 2610, and the like. Display unit 260
By using the display device of the present invention for 2, a video camera capable of suppressing power consumption can be obtained.

FIG. 19C illustrates a video display device, which includes a housing 2401, a display portion 2402, and a speaker portion 2.
403 etc. By using the display device of the present invention for the display portion 2402, a video display device capable of suppressing power consumption can be obtained. The video display device includes all video display devices for displaying video, such as for personal computers, for receiving TV broadcasts, and for displaying advertisements.

As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields.

In the present embodiment, various figures have been used for explanation, but the contents described in each figure (may be a part) are different from the contents (may be a part) described in another figure. Application, combination, or replacement can be performed freely. Further, in the drawings described so far, more parts can be formed by combining each part with another part.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied to, combined with, the contents (may be a part) described in the drawings of other embodiments and examples, Alternatively, replacement can be performed freely. Further, in the drawings of this embodiment, more drawings can be formed by combining each embodiment with portions of different embodiments and examples.

In addition, this example is an example in which the content (may be a part) described in other embodiments and examples is embodied, an example in which the content is slightly modified, an example in which a part is changed, An example of an improved case, an example of a detailed case, an example of an applied case, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments and examples can be freely applied to, combined with, or replaced with this example.

DESCRIPTION OF SYMBOLS 100 Pixel part 101 Scan line drive circuit 102 Signal line drive circuit 103 Shift register 104 Sampling circuit 105 Latch 106 Latch 107 Latch 108 Latch 110 Data comparison part 111 RAM
112 RAM
113 Control circuit 114 Data format circuit 115 Comparator 116 Address memory 117 Operation circuit 118 PLL circuit 119 Signal control circuit 120 Counter 121 Shift register 122 Buffer 131 Insulating film 200 Pixel portion 201 Scan line drive circuit 202 Signal line drive circuit 203 Shift register 204 Sampling Circuit 205 Latch 206 Latch 207 Latch 208 Latch 209 DA converter circuit 301 Pixel unit 304 Pixel 305 Switching transistor 306 Driving transistor 307 Light emitting element 308 Retention capacitor 401 Pixel unit 402 Pixel 403 Transistor 404 Liquid crystal cell 405 Retention capacitor 501 Shift register 502 Sampling Circuit 503 Latch 504 Latch 505 Latch 506 Level shifter 507 Buffer 508 Lay-type flip-flop (DFF)
509 Memory element 510 Memory element 511 Memory element 512 Memory element 601 Shift register 602 Sampling circuit 603 Latch 604 Latch 605 Latch 606 DA converter circuit 608 Delay type flip-flop (DFF)
609 Memory element 610 Memory element 611 Memory element 612 Memory element 801 Memory element 802 Memory element 803 Memory element 804 Clocked inverter 805 Inverter 806 Clocked inverter 807 Switch circuit 808 Transmission gate 809 Inverter 2023 Light emitting diode 2101 Main body 2102 Display unit 2103 Audio input Unit 2104 audio output unit 2105 operation key 2401 case 2402 display unit 2403 speaker unit 2601 main body 2602 display unit 2603 case 2604 external connection port 2605 remote control receiving unit 2606 image receiving unit 2607 battery 2608 audio input unit 2609 operation key 2610 eyepiece unit 4001 Substrate 4002 Pixel portion 4003 Signal line driver circuit 4004 Scan line driver circuit 4006 Substrate 4007 Filler 400 Transistor 4009 driving transistor 4010 switching transistor 4011 emitting element 4012 opposite electrode 4013 electroluminescent layer 4014 lines 4015 lines 4016 connect terminals 4017 wiring 4018 FPC
4019 Anisotropic conductive film 4020 Sealing material 10101 Substrate 10102 Insulating film 10103 Conductive layer 10104 Insulating film 10105 Semiconductor layer 10106 Semiconductor layer 10107 Conductive layer 10108 Insulating film 10109 Conductive layer 10110 Alignment film 10112 Alignment film 10113 Conductive layer 10114 Light shielding film 10115 Color filter 10116 Substrate 10117 Spacer 10118 Liquid crystal molecule 10201 Substrate 10202 Insulating film 10203 Conductive layer 10204 Insulating film 10205 Semiconductor layer 10206 Semiconductor layer 10207 Conductive layer 10208 Insulating film 10209 Conductive layer 10210 Alignment film 10212 Alignment film 10213 Conductive layer 10214 Light shielding film 10215 Color filter 10216 Substrate 10217 spacer 10218 liquid crystal molecule 10219 alignment control projection 10231 base 10232 Insulating film 10233 Conductive layer 10234 Insulating film 10235 Semiconductor layer 10236 Semiconductor layer 10237 Conductive layer 10238 Insulating film 10239 Conductive layer 10240 Aligned film 10242 Aligned film 10243 Conductive layer 10244 Light shielding film 10245 Color filter 10246 Substrate 10247 Spacer 10248 Liquid crystal molecule 10249 Electrode notch Part 10301 Substrate 10302 Insulating film 10303 Conductive layer 10304 Insulating film 10305 Semiconductor layer 10306 Semiconductor layer 10307 Conductive layer 10308 Insulating film 10309 Conductive layer 10310 Alignment film 10312 Alignment film 10314 Light shielding film 10315 Color filter 10316 Substrate 10317 Spacer 10318 Liquid crystal molecule 10331 Substrate 10332 Insulation Film 10333 Conductive layer 10334 Insulating film 10335 Semiconductor 10336 Semiconductor layer 10337 Conductive layer 10338 Insulating film 10339 Conductive layer 10340 Aligned film 10342 Aligned film 10343 Conductive layer 10344 Light-shielding film 10345 Color filter 10346 Substrate 10347 Spacer 10348 Liquid crystal molecule 10349 Insulating film 10401 Scan line 10402 Video signal line 10403 Capacitance line 10404 Transistor 10405 Pixel electrode 10406 Pixel capacitor 10501 Scan line 10502 Video signal line 10503 Capacitor line 10504 Transistor 10505 Pixel electrode 10506 Pixel capacitor 10507 Orientation control protrusion 10511 Scan line 10512 Video signal line 10513 Capacitor line 10514 Transistor 10515 Pixel electrode 10516 Pixel capacitor 10517 Electrode notch Unit 10601 Scanning line 10602 Video signal line 1060 3 Common electrode 10604 Transistor 10605 Pixel electrode 10611 Scan line 10612 Video signal line 10613 Common electrode 10614 Transistor 10615 Pixel electrode 20101 Backlight unit 20102 Diffuser plate 20103 Light guide plate 20104 Reflector plate 20105 Lamp reflector 20106 Light source 20107 Liquid crystal panel 20201 Backlight unit 20202 Lamp Reflector 20203 Cold cathode tube 20211 Backlight unit 20212 Lamp reflector 20213 Light emitting diode 20221 Back light unit 20222 Lamp reflector 20223 Light emitting diode 20224 Light emitting diode 20225 Light emitting diode 20231 Back light unit 20232 Lamp reflector 20233 Light emitting diode 2 234 Light emitting diode 20235 Light emitting diode 20300 Polarizing film 20301 Protective film 20302 Substrate film 20303 PVA polarizing film 20304 Substrate film 20305 Adhesive layer 20306 Release film 20401 Video signal 20402 Control circuit 20403 Signal line driver circuit 20404 Scan line driver circuit 20405 Pixel unit 20406 Illuminating means 20407 Power supply 20408 Drive circuit unit 20410 Scan line 20412 Signal line 20431 Shift register 20432 Latch 20433 Latch 20434 Level shifter 20435 Buffer 20441 Shift register 20442 Level shifter 20443 Buffer 20500 Backlight unit 20501 Diffuser 20502 Light shield 20503 Lamp reflector 20504 Light 20505 Light source 20510 Back light unit 20511 Diffuser plate 20512 Light shield plate 20513 Lamp reflector 20514 Light source 30101 Coding circuit 30102 Frame memory 30103 Correction circuit 30104 DA conversion circuit 30112 Frame memory 30113 Correction circuit 30121 Input voltage 30122 Input voltage 30123 Output luminance 30124 Output luminance 30131 Input video signal 30132 Output video signal 30133 Signal 30201 Transistor 30202 Auxiliary capacitor 30203 Display element 30204 Video signal line 30205 Scan line 30206 Common line 30211 Transistor 30212 Auxiliary capacitor 30213 Display element 30214 Video signal line 30215 Scan line 30216 Common line 30217 Common line 30301 Diffusion Board 30302 cold Polar tube 30311 Diffuser plate 30312 Light source 40100 Pixel 40101 Transistor 40102 Liquid crystal element 40103 Capacitance element 40104 Wiring 40105 Wiring 40106 Wiring 40107 Counter electrode 40110 Pixel 40111 Transistor 40111 Liquid crystal element 40113 Capacitance element 40114 Wiring 40115 Wiring 40116 Wiring 40200 Pixel 40201 Transistor 40202 Liquid crystal element 40203 Capacitor 40204 Wiring 40205 Wiring 40206 Wiring 40207 Counter electrode 40210 Pixel 40 211 Transistor 40212 Liquid crystal element 40213 Capacitor element 40214 Wiring 40215 Wiring 40216 Wiring 40217 Counter electrode 40300 Sub-pixel 40301 Transistor 40302 Liquid crystal element 40303 Capacitance element 40304 Wiring 403 05 wiring 40306 wiring 40307 counter electrode 40310 sub-pixel 40310 transistor 40313 liquid crystal element 40313 capacitor element 40315 wiring 40316 wiring 40317 counter electrode 40320 pixel 50100 liquid crystal layer 50101 substrate 50102 substrate 50103 polarizing plate 50104 polarizing plate 50105 electrode 50106 electrode 50200 liquid crystal layer 50201 substrate 50202 Substrate 50203 Polarizing plate 50204 Polarizing plate 50205 Electrode 50206 Electrode 50210 Liquid crystal layer 50211 Substrate 50212 Substrate 50213 Polarizing plate 50214 Polarizing plate 50215 Electrode 50216 Electrode 50300 Liquid crystal layer 50301 Substrate 50302 Substrate 50303 Polarizing plate 50304 Polarizing plate 50305 Electrode 50306 Electrode 50310 Liquid crystal layer 50311 Substrate 50312 Substrate 5 313 Polarizing plate 50314 Polarizing plate 50315 Electrode 50316 Electrode 50400 Liquid crystal layer 50401 Substrate 50402 Substrate 50403 Polarizing plate 50404 Polarizing plate 50405 Electrode 50406 Electrode 50410 Liquid crystal layer 50411 Substrate 50412 Substrate 50413 Polarizing plate 50414 Polarizing plate 50415 Electrode 50416 Electrode 50417 Insulating film 50501 Pixel electrode 50503 Projection 50601 Pixel electrode 50602 Pixel electrode 50611 Pixel electrode 50612 Pixel electrode 50613 Pixel electrode 50632 Pixel electrode 50641 Pixel electrode 50642 Pixel electrode 50701 Pixel electrode 50702 Pixel electrode 50711 Pixel electrode 50712 Pixel electrode 50731 Pixel electrode 50742 Pixel electrode 50742 Pixel electrode 50742 Electrode 60105 Transistor 60106 Wiring Wiring 60108 transistor 60111 wiring 60112 counter electrode 60113 capacitor 60115 pixel electrode 60116 partition wall 60117 organic conductive film 60118 organic thin film 60119 substrate 60200 substrate 60201 wiring 60202 wiring 60203 wiring 60204 wiring 60205 transistor 60206 transistor 60207 transistor 60208 pixel electrode 60211 partition wall 60212 organic conductive Body film 60213 organic thin film 60214 counter electrode 60300 substrate 60301 wiring 60302 wiring 60303 wiring 60304 wiring 60305 transistor 60306 transistor 60307 transistor 60308 transistor 60309 pixel electrode 60311 wiring 60312 wiring 60321 partition 60322 organic conductor film 6 323 Organic thin film 60324 Counter electrode 80300 Pixel 80301 Switching transistor 80302 Driving transistor 80303 Capacitor element 80304 Light emitting element 80305 Signal line 80306 Scan line 80307 Power line 80308 Common electrode 80309 Rectifier 80400 Pixel 80401 Switching transistor 80402 Driving transistor 80403 Capacitor element 80404 Light-emitting element 80405 Signal line 80406 Scan line 80407 Power supply line 80408 Common electrode 80409 Rectifier element 80410 Scan line 80500 Pixel 80501 Switching transistor 80502 Drive transistor 80503 Capacitor element 80504 Light-emitting element 80505 Signal line 80506 Scan line 80507 Power line 80508 Common electrode 80509 Tiger for erasure Transistor 80510 scanning line 80600 driving transistor 80601 switch 80602 switch 80603 switch 80604 capacitive element 80605 capacitive element 80611 signal line 80612 power line 80613 scanning line 80614 scanning line 80620 light emitting element 80621 common electrode 80700 driving transistor 80701 switch 80702 switch 80703 switch 80704 capacitance Element 80711 Signal line 80712 Power line 80713 Scan line 80714 Scan line 80730 Light emitting element 80731 Common electrode 80734 Scan line 100506 Impurity region 110111 Substrate 110112 Insulating film 110113 Semiconductor layer 110114 Semiconductor layer 110115 Semiconductor layer 110116 Insulating film 110117 Gate electrode 110118 Insulating film 110119 Insulating film 110121 Side wall 110122 Mask 110123 Conductive film 110201 Substrate 110202 Insulating film 110203 Conductive layer 110204 Conductive layer 110205 Conductive layer 110206 Semiconductor layer 110207 Semiconductor layer 110208 Semiconductor layer 110209 Insulating film 110210 Insulating film 110211 Conductive layer 110212 Conductive layer 110220 Transistor 110221 Capacitance Element 110301 Substrate 110303 Conductive layer 110302 Insulating film 110304 Conductive layer 110306 Semiconductor layer 110307 Semiconductor layer 110308 Semiconductor layer 110309 Conductive layer 110310 Conductive layer 110311 Conductive layer 110312 Conductive layer 110320 Transistor 110321 Capacitance element 110401 Substrate 110402 Insulating film 110403 Conductive layer 110404 Conductive layer 110406 Semiconductor layer 110407 Semiconductor layer 110408 Semiconductor layer 110409 Conductive layer 110410 Conductive layer 110411 Conductive layer 110412 Insulating film 110420 Transistor 110421 Capacitor element 110501 Substrate 110502 Insulating film 110503 Conductive layer 110504 Conductive layer 110505 Impurity region 110506 Impurity region 110507 LD region 110508 LD Region 110509 LDD region 110510 Channel formation region 110511 Insulating film 110512 Conductive layer 110513 Conductive layer 110520 Transistor 110521 Capacitor 110522 Insulating film 120100 Electrode layer 120102 Electroluminescent layer 120103 Electrode layer 120104 Insulating film 120105 Insulating film 120106 Insulating film 120200 Electrode layer 12020 Luminescent material 120202 Electroluminescent layer 120203 Electrode layer 120204 Insulating film 120205 Insulating film 120206 Insulating film 130100 Rear projection display device 130101 Screen panel 130102 Speaker 130104 Operation switches 130110 Housing 130111 Projector unit 130112 Mirror 130200 Front projection display device 130201 Projection optics System 130301 light source unit 130302 light source lamp 130303 light source optical system 130304 modulation unit 130305 dichroic mirror 130306 total reflection mirror 130308 display panel 130309 prism 130310 projection optical system 130400 modulation unit 130401 dichroic mirror 130402 dichroic mirror 130403 total reflection mirror -130404 Polarization beam splitter 130405 Polarization beam splitter 130406 Polarization beam splitter 130407 Display panel 130411 Projection optical system 130501 Dichroic mirror 130502 Dichroic mirror 130503 Red light dichroic mirror 130504 Phase difference plate 130505 Color filter plate 130506 Micro lens array 130507 Display panel 130508 Display panel 130509 Display panel 130511 Projection optical system 180100 Display device 180101 Pixel portion 180102 Pixel 180103 Signal line driver circuit 180104 Scan line driver circuit 180400 Frame period 180401 Image 180402 Intermediate image 180412 Intermediate image 180413 Intermediate image 190101 Anode 190102 Cathode 190103 Hole transport region 190104 Electron transport region 190105 Mixing region 190106 Region 190107 Region 190108 Region 190109 Region 190260 Transport chamber 190261 Transport chamber 190262 Load chamber 190263 Unload chamber 190264 Intermediate processing chamber 190265 Sealing processing chamber 190266 Transport means 190267 Transport means 190268 Heat treatment chamber 190269 Deposition chamber 190270 Deposition chamber 190271 Deposition chamber 190272 Plasma treatment chamber 190273 Deposition chamber 190274 Deposition chamber 190276 Deposition chamber 190380 Evaporation source holder 190382 Evaporation source 190382 Distance sensor 190383 Articulated arm 190384 Material supply pipe 190386 Substrate stage 190387 Substrate chuck 190388 Mask chuck 190389 Substrate 190390 Shadow mask 190391 Top plate 190392 Bottom plate 20514a Light source 20514b Light source 20514c Light source 502114 Projection 502118 Projection 900101 Display panel 900102 Pixel portion 900103 Scan line driver circuit 900104 Signal line driver circuit 900111 Circuit board 900112 Control circuit 900113 Signal division circuit 900114 Connection wiring 900201 Tuner 900202 Video signal amplification circuit 900203 Video signal processing circuit 900205 Audio signal amplification circuit 900206 Audio signal processing circuit 900207 Speaker 900208 Control circuit 9000020 Input unit 900212 Control circuit 900213 Signal division circuit 900301 Housing 900302 Display screen 90030 Speaker 900304 Operation switch 900310 Charger 900312 Case 900313 Display unit 900316 Operation key 900317 Speaker unit 900401 Display panel 900402 Printed wiring board 900403 Pixel unit 900404 Scan line driver circuit 9000040 Scan line driver circuit 900406 Signal line driver circuit 9000040 Controller 9000040 Central processing unit (CPU)
9004009 Memory 900410 Power supply circuit 900411 Audio processing circuit 900412 Transmission / reception circuit 900413 Flexible printed circuit board (FPC)
900414 Interface (I / F) section 900415 Antenna port 900416 VRAM
900417 DRAM
900418 Flash memory 900419 Interface (I / F) section 900420 Control signal generation circuit 900411 Decoder 900422 Register 900423 Arithmetic circuit 900424 RAM
900425 Input unit 9000042 Microphone 9000042 Speaker 9000042 Antenna 9000050 Display panel 9000051 FPC
900530 Housing 900531 Printed circuit board 9005002 Speaker 900533 Microphone 900534 Transmission / reception circuit 90000535 Signal processing circuit 90000536 Input means 90000537 Battery 90000539 Case 900600 Cellular phone 90000601 Main body (A)
900602 body (B)
90063 Housing 9000060 Operation switches 9000060 Microphone 9000060 Speaker 900607 Circuit board 9000060 Display panel (A)
900609 Display panel (B)
900610 Hinge 900711 Case 900712 Support base 900713 Display unit 900721 Main unit 900722 Display unit 900723 Image receiving unit 900724 Operation key 900725 External connection port 900726 Shutter 900731 Main unit 900732 Case 900733 Display unit 900734 Keyboard 900735 External connection port 900731 Main unit 900741 Main unit 900741 900743 Switch 900744 Operation key 9000074 Infrared port 9000075 Main body 9000075 Body 9000075 Display unit A
900774 Display B
900755 part 900075 operation key 9000075 speaker part 900761 main body 900762 display part 900763 earphone 900764 support part 900771 case 900772 display part 900773 speaker part 900774 operation key 900775 storage medium insertion part 900781 main body 900782 display part 900783 operation key 900784 speaker 900785 shutter 9 900771 Antenna 900810 Housing 900811 Display unit 900812 Remote control device 9000081 Speaker unit 900901 Display panel 900902 Unit bus 901001 Column 9010102 Display panel 901101 Car body 901102 Display panel 901201 Door 901202 Display panel 901203 Glass window 90120 Ceiling 901301 ceiling 901302 display panel 901303 hinges 190277a gate valve 190381a evaporation source 190381b evaporation source 190381c evaporation source 190385a material supply source 190385b material supply source 190385c material supplying source

Claims (3)

A pixel portion, a memory, a comparison circuit, a first circuit, a second circuit, a third circuit, and a fourth circuit;
The Nth line (N is an arbitrary natural number) in the row direction of the pixel portion includes a first pixel group,
The Mth line (M is an arbitrary natural number and different from N ) in the row direction of the pixel portion includes a second pixel group,
The memory is electrically connected to the comparison circuit;
The comparison circuit is electrically connected to the first circuit;
The comparison circuit is electrically connected to the second circuit;
The comparison circuit is electrically connected to the third circuit;
The first circuit is electrically connected to the first pixel group;
The first circuit is electrically connected to the second pixel group;
The second circuit is electrically connected to the first pixel group ,
The third circuit is electrically connected to the second pixel group ;
The fourth circuit is electrically connected to the first pixel group,
The fourth circuit is electrically connected to the second pixel group,
The memory has a function of storing a video signal as data,
Before Symbol comparison circuit, a data of the first video signal input to the N-th line, is compared with the data of the second video signal input to the M-th line, the first A function of determining whether or not the second data and the second data match,
The first circuit has a function of sampling the first video signal and the second video signal from the comparison circuit;
The second circuit has a function of storing data of the first video signal sampled by the first circuit,
The third circuit has a function of storing data of the second video signal sampled by the first circuit;
The fourth circuit has a function of selecting the Nth line or the Mth line ,
The second circuit has a function of inputting the first video signal to the first pixel group,
The display device, wherein the third circuit has a function of inputting the second video signal to the second pixel group. In claim 1 ,
The display device, wherein the memory includes a first memory and a second memory. In claim 1 or 2 ,
The second circuit and the third circuit include transistors,
The display device is characterized in that the transistor includes an oxide semiconductor layer .

Images