JP2007123861A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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Publication number
JP2007123861A
JP2007123861A JP2006262991A JP2006262991A JP2007123861A JP 2007123861 A JP2007123861 A JP 2007123861A JP 2006262991 A JP2006262991 A JP 2006262991A JP 2006262991 A JP2006262991 A JP 2006262991A JP 2007123861 A JP2007123861 A JP 2007123861A
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JP
Japan
Prior art keywords
film
oxide semiconductor
gate electrode
oxide
substrate
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JP2006262991A
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Japanese (ja)
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JP5064747B2 (en
JP2007123861A5 (en
Inventor
Kengo Akimoto
Tatsuya Honda
Hiroto Sone
寛人 曽根
達也 本田
健吾 秋元
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Semiconductor Energy Lab Co Ltd
株式会社半導体エネルギー研究所
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Priority to JP2005283782 priority Critical
Priority to JP2005283782 priority
Application filed by Semiconductor Energy Lab Co Ltd, 株式会社半導体エネルギー研究所 filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP2006262991A priority patent/JP5064747B2/en
Publication of JP2007123861A publication Critical patent/JP2007123861A/en
Publication of JP2007123861A5 publication Critical patent/JP2007123861A5/ja
Application granted granted Critical
Publication of JP5064747B2 publication Critical patent/JP5064747B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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