JP2007073986A5 - - Google Patents
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- JP2007073986A5 JP2007073986A5 JP2006301854A JP2006301854A JP2007073986A5 JP 2007073986 A5 JP2007073986 A5 JP 2007073986A5 JP 2006301854 A JP2006301854 A JP 2006301854A JP 2006301854 A JP2006301854 A JP 2006301854A JP 2007073986 A5 JP2007073986 A5 JP 2007073986A5
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- Prior art keywords
- layer
- gan
- thermal expansion
- substrate body
- intervening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 27
- 229910002601 GaN Inorganic materials 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 20
- 238000000151 deposition Methods 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910052594 sapphire Inorganic materials 0.000 claims 4
- 239000010980 sapphire Substances 0.000 claims 4
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 238000004873 anchoring Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 2
- 239000011733 molybdenum Substances 0.000 claims 2
- 229910001316 Ag alloy Inorganic materials 0.000 claims 1
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910017709 Ni Co Inorganic materials 0.000 claims 1
- 229910003267 Ni-Co Inorganic materials 0.000 claims 1
- 229910003262 Ni‐Co Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10051465A DE10051465A1 (de) | 2000-10-17 | 2000-10-17 | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002537058A Division JP2004512688A (ja) | 2000-10-17 | 2001-10-08 | ＧａＮベースの半導体デバイスを製造する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007073986A JP2007073986A (ja) | 2007-03-22 |
| JP2007073986A5 true JP2007073986A5 (https=) | 2008-07-24 |
Family
ID=7660104
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002537058A Pending JP2004512688A (ja) | 2000-10-17 | 2001-10-08 | ＧａＮベースの半導体デバイスを製造する方法 |
| JP2006301854A Pending JP2007073986A (ja) | 2000-10-17 | 2006-11-07 | ＧａＮベースの半導体デバイスを製造する方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002537058A Pending JP2004512688A (ja) | 2000-10-17 | 2001-10-08 | ＧａＮベースの半導体デバイスを製造する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US7691656B2 (https=) |
| EP (1) | EP1327267B1 (https=) |
| JP (2) | JP2004512688A (https=) |
| CN (1) | CN100377368C (https=) |
| DE (1) | DE10051465A1 (https=) |
| TW (1) | TW513818B (https=) |
| WO (1) | WO2002033760A1 (https=) |
Families Citing this family (130)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP2270875B1 (de) * | 2000-04-26 | 2018-01-10 | OSRAM Opto Semiconductors GmbH | Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren |
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-
2000
- 2000-10-17 DE DE10051465A patent/DE10051465A1/de not_active Ceased
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2001
- 2001-10-08 CN CNB018175066A patent/CN100377368C/zh not_active Expired - Lifetime
- 2001-10-08 WO PCT/DE2001/003851 patent/WO2002033760A1/de not_active Ceased
- 2001-10-08 EP EP01987950.1A patent/EP1327267B1/de not_active Expired - Lifetime
- 2001-10-08 JP JP2002537058A patent/JP2004512688A/ja active Pending
- 2001-10-16 TW TW090125526A patent/TW513818B/zh not_active IP Right Cessation
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2003
- 2003-04-17 US US10/417,611 patent/US7691656B2/en not_active Expired - Fee Related
-
2006
- 2006-11-07 JP JP2006301854A patent/JP2007073986A/ja active Pending
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2009
- 2009-12-29 US US12/648,566 patent/US8129209B2/en not_active Expired - Fee Related
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2012
- 2012-02-16 US US13/398,425 patent/US8809086B2/en not_active Expired - Fee Related
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