FR2423869A1 - Dispositif semiconducteur electroluminescent a recyclage de photons - Google Patents

Dispositif semiconducteur electroluminescent a recyclage de photons

Info

Publication number
FR2423869A1
FR2423869A1 FR7811857A FR7811857A FR2423869A1 FR 2423869 A1 FR2423869 A1 FR 2423869A1 FR 7811857 A FR7811857 A FR 7811857A FR 7811857 A FR7811857 A FR 7811857A FR 2423869 A1 FR2423869 A1 FR 2423869A1
Authority
FR
France
Prior art keywords
semiconductor device
diodes
electroluminescent semiconductor
photon recycling
recycling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7811857A
Other languages
English (en)
Other versions
FR2423869B1 (fr
Inventor
Jacques Lebailly
Jacques Varon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7811857A priority Critical patent/FR2423869A1/fr
Priority to CA000325482A priority patent/CA1137606A/fr
Priority to NL7902967A priority patent/NL7902967A/xx
Priority to US06/031,242 priority patent/US4243996A/en
Priority to GB7913397A priority patent/GB2019643B/en
Priority to JP4850379A priority patent/JPS54141592A/ja
Priority to DE19792915888 priority patent/DE2915888A1/de
Publication of FR2423869A1 publication Critical patent/FR2423869A1/fr
Application granted granted Critical
Publication of FR2423869B1 publication Critical patent/FR2423869B1/fr
Priority to JP1984098575U priority patent/JPS6035557U/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Abstract

Dispositif semiconducteur à double hétérojonction plane. Dispositif présentant une face réfléchissante et une face plane partiellement réfléchissante portant les deux électrodes, une couche active d'épaisseur déterminée et un matériau électroluminescent à structure de bande directe et faible taux de compensation, mettant en oeuvre un recyclage des photons émis. Diodes de photocoupleurs et diodes pour transmission par fibres optiques.
FR7811857A 1978-04-21 1978-04-21 Dispositif semiconducteur electroluminescent a recyclage de photons Granted FR2423869A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7811857A FR2423869A1 (fr) 1978-04-21 1978-04-21 Dispositif semiconducteur electroluminescent a recyclage de photons
CA000325482A CA1137606A (fr) 1978-04-21 1979-04-12 Dispositif semiconducteur electroluminescent
NL7902967A NL7902967A (nl) 1978-04-21 1979-04-17 Elektroluminescerende halfgeleiderinrichting.
GB7913397A GB2019643B (en) 1978-04-21 1979-04-18 Electroluminescent semiconductor device
US06/031,242 US4243996A (en) 1978-04-21 1979-04-18 Electroluminescent semiconductor device
JP4850379A JPS54141592A (en) 1978-04-21 1979-04-18 Semiconductor device
DE19792915888 DE2915888A1 (de) 1978-04-21 1979-04-19 Elektrolumineszierende halbleiteranordnung
JP1984098575U JPS6035557U (ja) 1978-04-21 1984-07-02 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7811857A FR2423869A1 (fr) 1978-04-21 1978-04-21 Dispositif semiconducteur electroluminescent a recyclage de photons

Publications (2)

Publication Number Publication Date
FR2423869A1 true FR2423869A1 (fr) 1979-11-16
FR2423869B1 FR2423869B1 (fr) 1982-04-16

Family

ID=9207447

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7811857A Granted FR2423869A1 (fr) 1978-04-21 1978-04-21 Dispositif semiconducteur electroluminescent a recyclage de photons

Country Status (7)

Country Link
US (1) US4243996A (fr)
JP (2) JPS54141592A (fr)
CA (1) CA1137606A (fr)
DE (1) DE2915888A1 (fr)
FR (1) FR2423869A1 (fr)
GB (1) GB2019643B (fr)
NL (1) NL7902967A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (fr) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu Diode emetrice de lumiere a hetero-jonction
US6800500B2 (en) 1999-02-05 2004-10-05 Lumileds Lighting U.S., Llc III-nitride light emitting devices fabricated by substrate removal

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834986A (ja) * 1981-08-27 1983-03-01 Sharp Corp 発光素子の製造方法
JPS59145581A (ja) * 1984-02-03 1984-08-21 Hitachi Ltd 発光半導体装置
JP2681431B2 (ja) * 1991-05-31 1997-11-26 信越半導体株式会社 発光素子
EP0905797B1 (fr) * 1997-09-29 2010-02-10 OSRAM Opto Semiconductors GmbH Source lumineuse à semi-conducteur et méthode de fabricaton
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
DE10026255A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiosdenchip auf der Basis von GaN und Verfahren zum Herstellen eines Lumineszenzdiodenbauelements mit einem Lumineszenzdiodenchip auf der Basis von GaN
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
EP1277241B1 (fr) * 2000-04-26 2017-12-13 OSRAM Opto Semiconductors GmbH Puce a diode electroluminescente a base de gan
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
US20030198795A1 (en) * 2002-04-17 2003-10-23 Grant William K. Modular material design system and method
US10707380B2 (en) * 2017-10-24 2020-07-07 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light-emitting diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273371A1 (fr) * 1974-05-28 1975-12-26 Thomson Csf
DE2534945A1 (de) * 1974-09-20 1976-04-15 Hitachi Ltd Leuchtdiode und verfahren zu ihrer herstellung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
FR2319980A1 (fr) * 1975-07-28 1977-02-25 Radiotechnique Compelec Dispositif optoelectronique semi-conducteur reversible
US4037241A (en) * 1975-10-02 1977-07-19 Texas Instruments Incorporated Shaped emitters with buried-junction structure
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273371A1 (fr) * 1974-05-28 1975-12-26 Thomson Csf
DE2534945A1 (de) * 1974-09-20 1976-04-15 Hitachi Ltd Leuchtdiode und verfahren zu ihrer herstellung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (fr) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu Diode emetrice de lumiere a hetero-jonction
US6800500B2 (en) 1999-02-05 2004-10-05 Lumileds Lighting U.S., Llc III-nitride light emitting devices fabricated by substrate removal
US7491565B2 (en) 1999-02-05 2009-02-17 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices fabricated by substrate removal

Also Published As

Publication number Publication date
FR2423869B1 (fr) 1982-04-16
DE2915888A1 (de) 1979-10-31
NL7902967A (nl) 1979-10-23
GB2019643B (en) 1982-05-12
US4243996A (en) 1981-01-06
JPS54141592A (en) 1979-11-02
DE2915888C2 (fr) 1989-01-19
GB2019643A (en) 1979-10-31
JPS6035557U (ja) 1985-03-11
JPS611749Y2 (fr) 1986-01-21
CA1137606A (fr) 1982-12-14

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Legal Events

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CD Change of name or company name
ST Notification of lapse