ES8204887A1 - Un dispositivo laser semiconductor - Google Patents
Un dispositivo laser semiconductorInfo
- Publication number
- ES8204887A1 ES8204887A1 ES503353A ES503353A ES8204887A1 ES 8204887 A1 ES8204887 A1 ES 8204887A1 ES 503353 A ES503353 A ES 503353A ES 503353 A ES503353 A ES 503353A ES 8204887 A1 ES8204887 A1 ES 8204887A1
- Authority
- ES
- Spain
- Prior art keywords
- contact layer
- semiconductor laser
- layer
- surface zone
- doped surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
DISPOSITIVO LASER SEMICONDUCTOR. CONSTA DE UNA PRIMERA CAPA (1) SEMICONDUCTORA PASIVA DE UN PRIMER TIPO DE CONDUCTIVIDAD; DE UNA CAPA (3) SEMICONDUCTORA ACTIVA SITUADA SOBRE LA PRIMERA CAPA (1) SEMICONDUCTORA PASIVA; DE UNA SEGUNDA CAPA (2) SEMICONDUCTORA PASIVA DE UN SEGUNDO TIPO DE CONDUCTIVIDAD OPUESTO AL PRIMERO Y SITUADA SOBRE LA CAPA (2) SEMICONDUCTORA ACTIVA; DE UNA CAPA (4) SEMICONDUCTORA DE CONTACTO, EN FORMA DE BANDA, DEL SEGUNDO TIPO DE CONDUCTIVIDAD, SITUADA SOBRE LA SEGUNDA CAPA (2) SEMICONDUCTORA PAASIVA, Y DE UNOS MEDIOS DE CONTACTO (8, 6, 5, 9) PARA APLICAR UNA TENSION EN SENTIDO DIRECTO ENTRE LA CAPA (4) SEMICONDUCTORA DE CONTACTO Y LA PRIMERA CAPA (1) SEMICONDUCTORA PASIVA, A FIN DE GENERAR RADIACION (10) ELECTROMAGNETICA COHERENTE EN UNA PARTE (11) DE LA CAPA (3) SEMICONDUCTORA ACTIVA.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8003728A NL8003728A (nl) | 1980-06-27 | 1980-06-27 | Halfgeleiderlaser. |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8204887A1 true ES8204887A1 (es) | 1982-05-16 |
ES503353A0 ES503353A0 (es) | 1982-05-16 |
Family
ID=19835526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES503353A Granted ES503353A0 (es) | 1980-06-27 | 1981-06-25 | Un dispositivo laser semiconductor |
Country Status (10)
Country | Link |
---|---|
US (1) | US4429396A (es) |
JP (1) | JPS5739595A (es) |
AU (1) | AU7211281A (es) |
CA (1) | CA1173547A (es) |
DE (1) | DE3124240A1 (es) |
ES (1) | ES503353A0 (es) |
FR (1) | FR2485823A1 (es) |
GB (1) | GB2079524B (es) |
IT (1) | IT1137926B (es) |
NL (1) | NL8003728A (es) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
FR2575870B1 (fr) * | 1985-01-10 | 1987-01-30 | Sermage Bernard | Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active |
GB8913070D0 (en) * | 1989-06-07 | 1989-07-26 | Bt & D Technologies Ltd | Semiconductor device |
US20020108896A1 (en) * | 2001-02-09 | 2002-08-15 | Edward Malkin | Filtration device and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2860817D1 (en) * | 1977-07-01 | 1981-10-15 | Post Office | Light source in an optical communications system |
FR2440616A1 (fr) * | 1978-10-31 | 1980-05-30 | Bouley Jean Claude | Laser a injection a double heterostructure a profil d'indice de refraction |
-
1980
- 1980-06-27 NL NL8003728A patent/NL8003728A/nl not_active Application Discontinuation
-
1981
- 1981-06-10 US US06/272,438 patent/US4429396A/en not_active Expired - Fee Related
- 1981-06-20 DE DE19813124240 patent/DE3124240A1/de not_active Withdrawn
- 1981-06-24 AU AU72112/81A patent/AU7211281A/en not_active Abandoned
- 1981-06-24 IT IT22549/81A patent/IT1137926B/it active
- 1981-06-24 GB GB8119417A patent/GB2079524B/en not_active Expired
- 1981-06-25 ES ES503353A patent/ES503353A0/es active Granted
- 1981-06-25 CA CA000380538A patent/CA1173547A/en not_active Expired
- 1981-06-26 FR FR8112671A patent/FR2485823A1/fr active Granted
- 1981-06-27 JP JP56099098A patent/JPS5739595A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2485823B1 (es) | 1984-07-13 |
AU7211281A (en) | 1982-01-07 |
IT8122549A0 (it) | 1981-06-24 |
IT1137926B (it) | 1986-09-10 |
FR2485823A1 (fr) | 1981-12-31 |
GB2079524B (en) | 1983-11-16 |
US4429396A (en) | 1984-01-31 |
CA1173547A (en) | 1984-08-28 |
GB2079524A (en) | 1982-01-20 |
DE3124240A1 (de) | 1982-06-16 |
NL8003728A (nl) | 1982-01-18 |
JPS5739595A (en) | 1982-03-04 |
ES503353A0 (es) | 1982-05-16 |
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