FR2440616A1 - Laser a injection a double heterostructure a profil d'indice de refraction - Google Patents
Laser a injection a double heterostructure a profil d'indice de refractionInfo
- Publication number
- FR2440616A1 FR2440616A1 FR7830935A FR7830935A FR2440616A1 FR 2440616 A1 FR2440616 A1 FR 2440616A1 FR 7830935 A FR7830935 A FR 7830935A FR 7830935 A FR7830935 A FR 7830935A FR 2440616 A1 FR2440616 A1 FR 2440616A1
- Authority
- FR
- France
- Prior art keywords
- ribbon
- gallium
- gaas
- gaalas
- double heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 title abstract 2
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 title 1
- 229910052733 gallium Inorganic materials 0.000 title 1
- 239000011701 zinc Substances 0.000 abstract 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052725 zinc Inorganic materials 0.000 abstract 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A.LASER A INJECTION A DOUBLE HETEROSTRUCTURE A GEOMETRIE DE JONCTION EN FORME DE RUBAN. B.IL COMPREND UNE PLAQUETTE COMPOSEE D'UN SUBSTRAT DE N - GA AS ET, SUR CE SUBSTRAT, DE COUCHES SUCCESSIVES DE N - GA AL AS, P - GA AS, P - GA AL AS, P - GA AS, ET IL EST CARACTERISE EN CE QUE LA COUCHE SUPERIEURE DE P - GA AS EST DECAPEE EN MESA SUR LA LARGEUR DE RUBAN ET QUE LA PLAQUETTE EST SIMULTANEMENT DOPEE EN P PAR DIFFUSION DE ZINC SUR SA FACE SUPERIEURE PROFILEE EN MESA, LE ZINC DIFFUSE ATTEIGNANT LA COUCHE DE N - GA AL AS DANS LES ZONES ADJACENTES A LA ZONE DE RUBAN TANDIS QU'IL N'ATTEINT PAS LA COUCHE DE P - GA AS DANS LA ZONE DE RUBAN, ET SOUMISE DANS SES PARTIES ADJACENTES A LA ZONE DE RUBAN A UN TRAITEMENT PAR BOMBARDEMENT DE PROTONS PENETRANT DANS LA COUCHE EN P - GA AL AS POUR LES RENDRE DE HAUTE RESISTIVITE. C.LASERS A DOUBLE HETEROJONCTION.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7830935A FR2440616A1 (fr) | 1978-10-31 | 1978-10-31 | Laser a injection a double heterostructure a profil d'indice de refraction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7830935A FR2440616A1 (fr) | 1978-10-31 | 1978-10-31 | Laser a injection a double heterostructure a profil d'indice de refraction |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2440616A1 true FR2440616A1 (fr) | 1980-05-30 |
FR2440616B1 FR2440616B1 (fr) | 1982-05-14 |
Family
ID=9214360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7830935A Granted FR2440616A1 (fr) | 1978-10-31 | 1978-10-31 | Laser a injection a double heterostructure a profil d'indice de refraction |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2440616A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0025749A1 (fr) * | 1979-09-11 | 1981-03-25 | Jean-Claude Bouley | Procédé de fabrication d'un laser à semiconducteur à confinements transverses optique et électrique et laser obtenu par ce procédé |
FR2485823A1 (fr) * | 1980-06-27 | 1981-12-31 | Philips Nv | Laser semi-conducteur |
FR2502847A1 (fr) * | 1981-03-25 | 1982-10-01 | Western Electric Co | Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant |
FR2581801A1 (fr) * | 1985-05-13 | 1986-11-14 | Devoldere Pascal | Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique |
WO1999031735A1 (fr) * | 1997-12-12 | 1999-06-24 | Honeywell, Inc. | Emetteur de lumiere isole par l'interbande |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2162195A1 (fr) * | 1971-12-02 | 1973-07-13 | Western Electric Co |
-
1978
- 1978-10-31 FR FR7830935A patent/FR2440616A1/fr active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2162195A1 (fr) * | 1971-12-02 | 1973-07-13 | Western Electric Co |
Non-Patent Citations (1)
Title |
---|
EXBK/73 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0025749A1 (fr) * | 1979-09-11 | 1981-03-25 | Jean-Claude Bouley | Procédé de fabrication d'un laser à semiconducteur à confinements transverses optique et électrique et laser obtenu par ce procédé |
FR2485823A1 (fr) * | 1980-06-27 | 1981-12-31 | Philips Nv | Laser semi-conducteur |
FR2502847A1 (fr) * | 1981-03-25 | 1982-10-01 | Western Electric Co | Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant |
FR2581801A1 (fr) * | 1985-05-13 | 1986-11-14 | Devoldere Pascal | Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique |
EP0206851A1 (fr) * | 1985-05-13 | 1986-12-30 | Pascal Devoldere | Procédé de réalisation de lasers à semiconducteurs à jonctions bloquantes assurant un confinement électrique |
WO1999031735A1 (fr) * | 1997-12-12 | 1999-06-24 | Honeywell, Inc. | Emetteur de lumiere isole par l'interbande |
EP1315216A2 (fr) * | 1997-12-12 | 2003-05-28 | Honeywell Inc. | Emetteur de lumière isolé par l'interbande |
EP1315216A3 (fr) * | 1997-12-12 | 2003-10-22 | Honeywell Inc. | Emetteur de lumière isolé par l'interbande |
Also Published As
Publication number | Publication date |
---|---|
FR2440616B1 (fr) | 1982-05-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |