FR2440616A1 - Laser a injection a double heterostructure a profil d'indice de refraction - Google Patents

Laser a injection a double heterostructure a profil d'indice de refraction

Info

Publication number
FR2440616A1
FR2440616A1 FR7830935A FR7830935A FR2440616A1 FR 2440616 A1 FR2440616 A1 FR 2440616A1 FR 7830935 A FR7830935 A FR 7830935A FR 7830935 A FR7830935 A FR 7830935A FR 2440616 A1 FR2440616 A1 FR 2440616A1
Authority
FR
France
Prior art keywords
ribbon
gallium
gaas
gaalas
double heterostructure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7830935A
Other languages
English (en)
Other versions
FR2440616B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7830935A priority Critical patent/FR2440616A1/fr
Publication of FR2440616A1 publication Critical patent/FR2440616A1/fr
Application granted granted Critical
Publication of FR2440616B1 publication Critical patent/FR2440616B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A.LASER A INJECTION A DOUBLE HETEROSTRUCTURE A GEOMETRIE DE JONCTION EN FORME DE RUBAN. B.IL COMPREND UNE PLAQUETTE COMPOSEE D'UN SUBSTRAT DE N - GA AS ET, SUR CE SUBSTRAT, DE COUCHES SUCCESSIVES DE N - GA AL AS, P - GA AS, P - GA AL AS, P - GA AS, ET IL EST CARACTERISE EN CE QUE LA COUCHE SUPERIEURE DE P - GA AS EST DECAPEE EN MESA SUR LA LARGEUR DE RUBAN ET QUE LA PLAQUETTE EST SIMULTANEMENT DOPEE EN P PAR DIFFUSION DE ZINC SUR SA FACE SUPERIEURE PROFILEE EN MESA, LE ZINC DIFFUSE ATTEIGNANT LA COUCHE DE N - GA AL AS DANS LES ZONES ADJACENTES A LA ZONE DE RUBAN TANDIS QU'IL N'ATTEINT PAS LA COUCHE DE P - GA AS DANS LA ZONE DE RUBAN, ET SOUMISE DANS SES PARTIES ADJACENTES A LA ZONE DE RUBAN A UN TRAITEMENT PAR BOMBARDEMENT DE PROTONS PENETRANT DANS LA COUCHE EN P - GA AL AS POUR LES RENDRE DE HAUTE RESISTIVITE. C.LASERS A DOUBLE HETEROJONCTION.
FR7830935A 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction Granted FR2440616A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7830935A FR2440616A1 (fr) 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7830935A FR2440616A1 (fr) 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction

Publications (2)

Publication Number Publication Date
FR2440616A1 true FR2440616A1 (fr) 1980-05-30
FR2440616B1 FR2440616B1 (fr) 1982-05-14

Family

ID=9214360

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7830935A Granted FR2440616A1 (fr) 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction

Country Status (1)

Country Link
FR (1) FR2440616A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025749A1 (fr) * 1979-09-11 1981-03-25 Jean-Claude Bouley Procédé de fabrication d'un laser à semiconducteur à confinements transverses optique et électrique et laser obtenu par ce procédé
FR2485823A1 (fr) * 1980-06-27 1981-12-31 Philips Nv Laser semi-conducteur
FR2502847A1 (fr) * 1981-03-25 1982-10-01 Western Electric Co Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
FR2581801A1 (fr) * 1985-05-13 1986-11-14 Devoldere Pascal Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique
WO1999031735A1 (fr) * 1997-12-12 1999-06-24 Honeywell, Inc. Emetteur de lumiere isole par l'interbande

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2162195A1 (fr) * 1971-12-02 1973-07-13 Western Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2162195A1 (fr) * 1971-12-02 1973-07-13 Western Electric Co

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/73 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025749A1 (fr) * 1979-09-11 1981-03-25 Jean-Claude Bouley Procédé de fabrication d'un laser à semiconducteur à confinements transverses optique et électrique et laser obtenu par ce procédé
FR2485823A1 (fr) * 1980-06-27 1981-12-31 Philips Nv Laser semi-conducteur
FR2502847A1 (fr) * 1981-03-25 1982-10-01 Western Electric Co Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
FR2581801A1 (fr) * 1985-05-13 1986-11-14 Devoldere Pascal Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique
EP0206851A1 (fr) * 1985-05-13 1986-12-30 Pascal Devoldere Procédé de réalisation de lasers à semiconducteurs à jonctions bloquantes assurant un confinement électrique
WO1999031735A1 (fr) * 1997-12-12 1999-06-24 Honeywell, Inc. Emetteur de lumiere isole par l'interbande
EP1315216A2 (fr) * 1997-12-12 2003-05-28 Honeywell Inc. Emetteur de lumière isolé par l'interbande
EP1315216A3 (fr) * 1997-12-12 2003-10-22 Honeywell Inc. Emetteur de lumière isolé par l'interbande

Also Published As

Publication number Publication date
FR2440616B1 (fr) 1982-05-14

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Legal Events

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