FR2440616B1 - - Google Patents

Info

Publication number
FR2440616B1
FR2440616B1 FR7830935A FR7830935A FR2440616B1 FR 2440616 B1 FR2440616 B1 FR 2440616B1 FR 7830935 A FR7830935 A FR 7830935A FR 7830935 A FR7830935 A FR 7830935A FR 2440616 B1 FR2440616 B1 FR 2440616B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7830935A
Other versions
FR2440616A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7830935A priority Critical patent/FR2440616A1/fr
Publication of FR2440616A1 publication Critical patent/FR2440616A1/fr
Application granted granted Critical
Publication of FR2440616B1 publication Critical patent/FR2440616B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR7830935A 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction Granted FR2440616A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7830935A FR2440616A1 (fr) 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7830935A FR2440616A1 (fr) 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction

Publications (2)

Publication Number Publication Date
FR2440616A1 FR2440616A1 (fr) 1980-05-30
FR2440616B1 true FR2440616B1 (fr) 1982-05-14

Family

ID=9214360

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7830935A Granted FR2440616A1 (fr) 1978-10-31 1978-10-31 Laser a injection a double heterostructure a profil d'indice de refraction

Country Status (1)

Country Link
FR (1) FR2440616A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
NL8003728A (nl) * 1980-06-27 1982-01-18 Philips Nv Halfgeleiderlaser.
FR2502847A1 (fr) * 1981-03-25 1982-10-01 Western Electric Co Dispositif emetteur de lumiere a semi-conducteurs comportant une structure de canalisation du courant
FR2581801B1 (fr) * 1985-05-13 1987-06-26 Devoldere Pascal Procede de realisation de lasers a semiconducteurs a jonctions bloquantes assurant un confinement electrique
US6064683A (en) * 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE791930A (fr) * 1971-12-02 1973-03-16 Western Electric Co Dispositif electroluminescent et procede pour sa fabrication

Also Published As

Publication number Publication date
FR2440616A1 (fr) 1980-05-30

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Legal Events

Date Code Title Description
ST Notification of lapse