IT1137926B - Laser a semiconduttore - Google Patents
Laser a semiconduttoreInfo
- Publication number
- IT1137926B IT1137926B IT22549/81A IT2254981A IT1137926B IT 1137926 B IT1137926 B IT 1137926B IT 22549/81 A IT22549/81 A IT 22549/81A IT 2254981 A IT2254981 A IT 2254981A IT 1137926 B IT1137926 B IT 1137926B
- Authority
- IT
- Italy
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8003728A NL8003728A (nl) | 1980-06-27 | 1980-06-27 | Halfgeleiderlaser. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8122549A0 IT8122549A0 (it) | 1981-06-24 |
IT1137926B true IT1137926B (it) | 1986-09-10 |
Family
ID=19835526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22549/81A IT1137926B (it) | 1980-06-27 | 1981-06-24 | Laser a semiconduttore |
Country Status (10)
Country | Link |
---|---|
US (1) | US4429396A (it) |
JP (1) | JPS5739595A (it) |
AU (1) | AU7211281A (it) |
CA (1) | CA1173547A (it) |
DE (1) | DE3124240A1 (it) |
ES (1) | ES8204887A1 (it) |
FR (1) | FR2485823A1 (it) |
GB (1) | GB2079524B (it) |
IT (1) | IT1137926B (it) |
NL (1) | NL8003728A (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2156585B (en) * | 1984-03-16 | 1987-10-21 | Hitachi Ltd | Light-emitting device electrode |
FR2575870B1 (fr) * | 1985-01-10 | 1987-01-30 | Sermage Bernard | Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active |
GB8913070D0 (en) * | 1989-06-07 | 1989-07-26 | Bt & D Technologies Ltd | Semiconductor device |
US20020108896A1 (en) * | 2001-02-09 | 2002-08-15 | Edward Malkin | Filtration device and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0000267B1 (en) * | 1977-07-01 | 1981-07-08 | The Post Office | Light source in an optical communications system |
FR2440616A1 (fr) * | 1978-10-31 | 1980-05-30 | Bouley Jean Claude | Laser a injection a double heterostructure a profil d'indice de refraction |
-
1980
- 1980-06-27 NL NL8003728A patent/NL8003728A/nl not_active Application Discontinuation
-
1981
- 1981-06-10 US US06/272,438 patent/US4429396A/en not_active Expired - Fee Related
- 1981-06-20 DE DE19813124240 patent/DE3124240A1/de not_active Withdrawn
- 1981-06-24 GB GB8119417A patent/GB2079524B/en not_active Expired
- 1981-06-24 IT IT22549/81A patent/IT1137926B/it active
- 1981-06-24 AU AU72112/81A patent/AU7211281A/en not_active Abandoned
- 1981-06-25 ES ES503353A patent/ES8204887A1/es not_active Expired
- 1981-06-25 CA CA000380538A patent/CA1173547A/en not_active Expired
- 1981-06-26 FR FR8112671A patent/FR2485823A1/fr active Granted
- 1981-06-27 JP JP56099098A patent/JPS5739595A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ES503353A0 (es) | 1982-05-16 |
FR2485823A1 (fr) | 1981-12-31 |
AU7211281A (en) | 1982-01-07 |
ES8204887A1 (es) | 1982-05-16 |
NL8003728A (nl) | 1982-01-18 |
US4429396A (en) | 1984-01-31 |
IT8122549A0 (it) | 1981-06-24 |
DE3124240A1 (de) | 1982-06-16 |
GB2079524B (en) | 1983-11-16 |
CA1173547A (en) | 1984-08-28 |
GB2079524A (en) | 1982-01-20 |
JPS5739595A (en) | 1982-03-04 |
FR2485823B1 (it) | 1984-07-13 |
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