JPS6035557U - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6035557U
JPS6035557U JP1984098575U JP9857584U JPS6035557U JP S6035557 U JPS6035557 U JP S6035557U JP 1984098575 U JP1984098575 U JP 1984098575U JP 9857584 U JP9857584 U JP 9857584U JP S6035557 U JPS6035557 U JP S6035557U
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
type
doped
contact pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1984098575U
Other languages
English (en)
Other versions
JPS611749Y2 (ja
Inventor
ジヤツク・ルベリ
ジヤツク・バロン
Original Assignee
エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン filed Critical エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン
Publication of JPS6035557U publication Critical patent/JPS6035557U/ja
Application granted granted Critical
Publication of JPS611749Y2 publication Critical patent/JPS611749Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は考案による半導体装置の第１例を示す線図的断
面図、第２図は同じくその第２例を示す線図的断面図で
ある。 １・・・第１層、２・・・誘電体材料層、３，４・・・
接点電極取付用窓、５・・・絶縁層、６・・・第３層、
７・・・活性層、８，１２，１３・・・環状部分、９・
・・中間層、１０・・・金属ベース、１１・・・電子放
射放出面、２１・・・第１層、２２・・・第１層の中央
部分、２３・・・活性層、２４・・・下側層、２５．２
７・・・同軸接点電極、２６・・・誘電体、２８・・・
凹所底部（放射放出面）、２９．３０・・・周辺部分。

Claims (1)

  1. 【実用新案登録請求の範囲】 １　光子リサイクルを利用して電磁放射を発生する半導
    体装置にあって、該半導体装置における半導体本体が、 ａ　前記放射を放出させる部分的に反射性の第１表面を
    有しているｐ−形の第１半導体層と； ｂ　禁止帯幅が前記第１半導体層の禁止帯幅よりも小さ
    く、直接遷接移型のエネルギー帯構造を有しており、補
    償係数が１／３以下で、しかも前記放射に対する吸収長
    が０．１〜３の範囲内の厚さを有するｎ−形の第２電界
    発生半導体層と； Ｃ禁止帯幅が前記第２半導体層の禁止帯幅よりも大きく
    、かつ２個の接点パッドを伴なう反射性の第２表面を有
    しているｎ−形の第３半導体層と； ｄ　前記両接点パッドの一方から前記第１半導体層まで
    延在する高度にｐ＋ドープした接点領域と； ｅ　前記両接点パッドに接続される電極；とを順次具え
    ていることを特徴とする半導体装置。 ２　前記第１半導体層よりも高濃度にドープし、且つ前
    記接点領域より低濃度にドープしたｐ−形の中間半導体
    層も具えることを特徴とする実用新案登録請求の範囲第
    １項記載の半導体装置。
JP1984098575U 1978-04-21 1984-07-02 半導体装置 Granted JPS6035557U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7811857A FR2423869A1 (fr) 1978-04-21 1978-04-21 Dispositif semiconducteur electroluminescent a recyclage de photons
FR7811857 1978-04-21

Publications (2)

Publication Number Publication Date
JPS6035557U true JPS6035557U (ja) 1985-03-11
JPS611749Y2 JPS611749Y2 (ja) 1986-01-21

Family

ID=9207447

Family Applications (2)

Application Number Title Priority Date Filing Date
JP4850379A Pending JPS54141592A (en) 1978-04-21 1979-04-18 Semiconductor device
JP1984098575U Granted JPS6035557U (ja) 1978-04-21 1984-07-02 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP4850379A Pending JPS54141592A (en) 1978-04-21 1979-04-18 Semiconductor device

Country Status (7)

Country Link
US (1) US4243996A (ja)
JP (2) JPS54141592A (ja)
CA (1) CA1137606A (ja)
DE (1) DE2915888A1 (ja)
FR (1) FR2423869A1 (ja)
GB (1) GB2019643B (ja)
NL (1) NL7902967A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
JPS5834986A (ja) * 1981-08-27 1983-03-01 Sharp Corp 発光素子の製造方法
JPS59145581A (ja) * 1984-02-03 1984-08-21 Hitachi Ltd 発光半導体装置
JP2681431B2 (ja) * 1991-05-31 1997-11-26 信越半導体株式会社 発光素子
EP0905797B1 (de) * 1997-09-29 2010-02-10 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
JP2003532298A (ja) * 2000-04-26 2003-10-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光半導体素子
WO2001084640A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh LUMINESZENZDIODENCHIP AUF DER BASIS VON GaN UND VERFAHREN ZUM HERSTELLEN EINES LUMINESZENZDIODENBAUELEMENTS
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
DE10026255A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiosdenchip auf der Basis von GaN und Verfahren zum Herstellen eines Lumineszenzdiodenbauelements mit einem Lumineszenzdiodenchip auf der Basis von GaN
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
US20030198795A1 (en) * 2002-04-17 2003-10-23 Grant William K. Modular material design system and method
US10707380B2 (en) * 2017-10-24 2020-07-07 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light-emitting diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273371B1 (ja) * 1974-05-28 1978-03-31 Thomson Csf
JPS5734671B2 (ja) * 1974-09-20 1982-07-24
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
FR2319980A1 (fr) * 1975-07-28 1977-02-25 Radiotechnique Compelec Dispositif optoelectronique semi-conducteur reversible
US4037241A (en) * 1975-10-02 1977-07-19 Texas Instruments Incorporated Shaped emitters with buried-junction structure
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device

Also Published As

Publication number Publication date
JPS54141592A (en) 1979-11-02
GB2019643A (en) 1979-10-31
FR2423869A1 (fr) 1979-11-16
FR2423869B1 (ja) 1982-04-16
JPS611749Y2 (ja) 1986-01-21
NL7902967A (nl) 1979-10-23
GB2019643B (en) 1982-05-12
US4243996A (en) 1981-01-06
DE2915888C2 (ja) 1989-01-19
CA1137606A (en) 1982-12-14
DE2915888A1 (de) 1979-10-31

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