JPS611749Y2 - - Google Patents

Info

Publication number
JPS611749Y2
JPS611749Y2 JP1984098575U JP9857584U JPS611749Y2 JP S611749 Y2 JPS611749 Y2 JP S611749Y2 JP 1984098575 U JP1984098575 U JP 1984098575U JP 9857584 U JP9857584 U JP 9857584U JP S611749 Y2 JPS611749 Y2 JP S611749Y2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1984098575U
Other versions
JPS6035557U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6035557U publication Critical patent/JPS6035557U/ja
Application granted granted Critical
Publication of JPS611749Y2 publication Critical patent/JPS611749Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP1984098575U 1978-04-21 1984-07-02 半導体装置 Granted JPS6035557U (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7811857A FR2423869A1 (fr) 1978-04-21 1978-04-21 Dispositif semiconducteur electroluminescent a recyclage de photons
FR7811857 1978-04-21

Publications (2)

Publication Number Publication Date
JPS6035557U JPS6035557U (ja) 1985-03-11
JPS611749Y2 true JPS611749Y2 (ja) 1986-01-21

Family

ID=9207447

Family Applications (2)

Application Number Title Priority Date Filing Date
JP4850379A Pending JPS54141592A (en) 1978-04-21 1979-04-18 Semiconductor device
JP1984098575U Granted JPS6035557U (ja) 1978-04-21 1984-07-02 半導体装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP4850379A Pending JPS54141592A (en) 1978-04-21 1979-04-18 Semiconductor device

Country Status (7)

Country Link
US (1) US4243996A (ja)
JP (2) JPS54141592A (ja)
CA (1) CA1137606A (ja)
DE (1) DE2915888A1 (ja)
FR (1) FR2423869A1 (ja)
GB (1) GB2019643B (ja)
NL (1) NL7902967A (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
JPS5834986A (ja) * 1981-08-27 1983-03-01 Sharp Corp 発光素子の製造方法
JPS59145581A (ja) * 1984-02-03 1984-08-21 Hitachi Ltd 発光半導体装置
JP2681431B2 (ja) * 1991-05-31 1997-11-26 信越半導体株式会社 発光素子
EP0905797B1 (de) * 1997-09-29 2010-02-10 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US20010042866A1 (en) 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
DE10017337C2 (de) * 2000-04-07 2002-04-04 Vishay Semiconductor Gmbh Verfahren zum Herstellen lichtaussendender Halbleiterbauelemente
DE10026255A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiosdenchip auf der Basis von GaN und Verfahren zum Herstellen eines Lumineszenzdiodenbauelements mit einem Lumineszenzdiodenchip auf der Basis von GaN
CN1292494C (zh) * 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
DE10020464A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
US7319247B2 (en) * 2000-04-26 2008-01-15 Osram Gmbh Light emitting-diode chip and a method for producing same
TWI289944B (en) * 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
US20030198795A1 (en) * 2002-04-17 2003-10-23 Grant William K. Modular material design system and method
US10707380B2 (en) * 2017-10-24 2020-07-07 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light-emitting diode

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2273371B1 (ja) * 1974-05-28 1978-03-31 Thomson Csf
JPS5734671B2 (ja) * 1974-09-20 1982-07-24
GB1478152A (en) * 1974-10-03 1977-06-29 Standard Telephones Cables Ltd Light emissive diode
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
FR2319980A1 (fr) * 1975-07-28 1977-02-25 Radiotechnique Compelec Dispositif optoelectronique semi-conducteur reversible
US4037241A (en) * 1975-10-02 1977-07-19 Texas Instruments Incorporated Shaped emitters with buried-junction structure
JPS5448493A (en) * 1977-03-23 1979-04-17 Toshiba Corp Semiconductor optical device

Also Published As

Publication number Publication date
FR2423869B1 (ja) 1982-04-16
GB2019643A (en) 1979-10-31
DE2915888C2 (ja) 1989-01-19
GB2019643B (en) 1982-05-12
US4243996A (en) 1981-01-06
DE2915888A1 (de) 1979-10-31
JPS54141592A (en) 1979-11-02
FR2423869A1 (fr) 1979-11-16
JPS6035557U (ja) 1985-03-11
CA1137606A (en) 1982-12-14
NL7902967A (nl) 1979-10-23

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