JPS5734671B2 - - Google Patents

Info

Publication number
JPS5734671B2
JPS5734671B2 JP10782474A JP10782474A JPS5734671B2 JP S5734671 B2 JPS5734671 B2 JP S5734671B2 JP 10782474 A JP10782474 A JP 10782474A JP 10782474 A JP10782474 A JP 10782474A JP S5734671 B2 JPS5734671 B2 JP S5734671B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10782474A
Other versions
JPS5135295A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10782474A priority Critical patent/JPS5734671B2/ja
Priority to GB3229275A priority patent/GB1470744A/en
Priority to DE2534945A priority patent/DE2534945C3/de
Priority to US05/612,282 priority patent/US4017881A/en
Priority to NL7511126.A priority patent/NL163677C/xx
Publication of JPS5135295A publication Critical patent/JPS5135295A/ja
Publication of JPS5734671B2 publication Critical patent/JPS5734671B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
JP10782474A 1974-09-20 1974-09-20 Expired JPS5734671B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10782474A JPS5734671B2 (ja) 1974-09-20 1974-09-20
GB3229275A GB1470744A (en) 1974-09-20 1975-08-01 Light emitting semi-conductor devices
DE2534945A DE2534945C3 (de) 1974-09-20 1975-08-05 Lumineszenzdiode
US05/612,282 US4017881A (en) 1974-09-20 1975-09-11 Light emitting semiconductor device and a method for making the same
NL7511126.A NL163677C (nl) 1974-09-20 1975-09-19 Halfgeleiderdiode voor het uitzenden van licht.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10782474A JPS5734671B2 (ja) 1974-09-20 1974-09-20

Publications (2)

Publication Number Publication Date
JPS5135295A JPS5135295A (ja) 1976-03-25
JPS5734671B2 true JPS5734671B2 (ja) 1982-07-24

Family

ID=14468955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10782474A Expired JPS5734671B2 (ja) 1974-09-20 1974-09-20

Country Status (5)

Country Link
US (1) US4017881A (ja)
JP (1) JPS5734671B2 (ja)
DE (1) DE2534945C3 (ja)
GB (1) GB1470744A (ja)
NL (1) NL163677C (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52104091A (en) * 1976-02-27 1977-09-01 Hitachi Ltd Light-emitting semiconductor
US4212021A (en) * 1976-07-21 1980-07-08 Hitachi, Ltd. Light emitting devices
JPS543483A (en) * 1977-06-10 1979-01-11 Hitachi Ltd Liminous semiconductor device
JPS546787A (en) * 1977-06-17 1979-01-19 Matsushita Electric Ind Co Ltd Luminous element
US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
FR2423869A1 (fr) * 1978-04-21 1979-11-16 Radiotechnique Compelec Dispositif semiconducteur electroluminescent a recyclage de photons
JPS5586175A (en) * 1978-12-22 1980-06-28 Canon Inc Photodiode
SE453622B (sv) * 1983-12-08 1988-02-15 Asea Ab Halvledarkomponent for generering av optisk stralning
JPH06350078A (ja) * 1993-06-08 1994-12-22 Fujitsu Ltd 半導体装置とその製造方法
JP3559453B2 (ja) * 1998-06-29 2004-09-02 株式会社東芝 発光素子
US6835963B2 (en) * 1999-12-22 2004-12-28 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
DE19963550B4 (de) * 1999-12-22 2004-05-06 Epigap Optoelektronik Gmbh Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper
US9111950B2 (en) * 2006-09-28 2015-08-18 Philips Lumileds Lighting Company, Llc Process for preparing a semiconductor structure for mounting

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4944314B1 (ja) * 1969-09-10 1974-11-27
JPS502235B1 (ja) * 1970-09-07 1975-01-24
US3912556A (en) * 1971-10-27 1975-10-14 Motorola Inc Method of fabricating a scannable light emitting diode array
FR2175571B1 (ja) * 1972-03-14 1978-08-25 Radiotechnique Compelec
JPS5310840B2 (ja) * 1972-05-04 1978-04-17
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process

Also Published As

Publication number Publication date
US4017881A (en) 1977-04-12
JPS5135295A (ja) 1976-03-25
DE2534945A1 (de) 1976-04-15
GB1470744A (en) 1977-04-21
DE2534945C3 (de) 1980-10-09
NL163677C (nl) 1980-09-15
NL7511126A (nl) 1976-03-23
NL163677B (nl) 1980-04-15
DE2534945B2 (de) 1980-01-31

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