GB1305324A - - Google Patents

Info

Publication number
GB1305324A
GB1305324A GB3036271A GB3036271A GB1305324A GB 1305324 A GB1305324 A GB 1305324A GB 3036271 A GB3036271 A GB 3036271A GB 3036271 A GB3036271 A GB 3036271A GB 1305324 A GB1305324 A GB 1305324A
Authority
GB
United Kingdom
Prior art keywords
emitter
elliptical
contact pad
base
base electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3036271A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1305324A publication Critical patent/GB1305324A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB3036271A 1970-07-23 1971-06-29 Expired GB1305324A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702036638 DE2036638A1 (de) 1970-07-23 1970-07-23 Kontaktanordnung

Publications (1)

Publication Number Publication Date
GB1305324A true GB1305324A (ja) 1973-01-31

Family

ID=5777677

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3036271A Expired GB1305324A (ja) 1970-07-23 1971-06-29

Country Status (5)

Country Link
CH (1) CH526204A (ja)
DE (1) DE2036638A1 (ja)
FR (1) FR2099540A1 (ja)
GB (1) GB1305324A (ja)
NL (1) NL7110197A (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2528232A1 (fr) * 1982-06-08 1983-12-09 Thomson Csf Structure de contact sur une zone semi-conductrice superficielle fortement dopee et procede de fabrication
DE3232837A1 (de) * 1982-09-03 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer 2-ebenen-metallisierung fuer halbleiterbauelemente, insbesondere fuer leistungshalbleiterbauelemente wie thyristoren

Also Published As

Publication number Publication date
DE2036638A1 (de) 1972-02-03
FR2099540A1 (ja) 1972-03-17
NL7110197A (ja) 1972-01-25
CH526204A (de) 1972-07-31

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees