TW369731B - Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same - Google Patents

Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same

Info

Publication number
TW369731B
TW369731B TW087108395A TW87108395A TW369731B TW 369731 B TW369731 B TW 369731B TW 087108395 A TW087108395 A TW 087108395A TW 87108395 A TW87108395 A TW 87108395A TW 369731 B TW369731 B TW 369731B
Authority
TW
Taiwan
Prior art keywords
led
light
transparent glass
quartz
emitting diode
Prior art date
Application number
TW087108395A
Other languages
Chinese (zh)
Inventor
Guo-Shiung Jang
Kun-Chuan Lin
Lung-Jian Lin
Ruei-Hua Hung
Dung-Shing Wu
Wei-Hau Tzeng
Original Assignee
Visual Photonics Epitaxy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Visual Photonics Epitaxy Co Ltd filed Critical Visual Photonics Epitaxy Co Ltd
Priority to TW087108395A priority Critical patent/TW369731B/en
Application granted granted Critical
Publication of TW369731B publication Critical patent/TW369731B/en

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Abstract

This invention relates to a kind of light-emitting diode (LED) permanent substrate by using transparent glass or quartz and its production method, after settling LED component structure on a temporary substrate, and then to stick the LED component onto transparent glass used as permanent substrate, and then removing the aforementioned light-absorbing temporary substrate, such that the light emitted by the LED component will not be absorbed by the substrate and the illumination brightness can be increased. This invention is also about a kind of light-emitting diode (LED) permanent substrate by using transparent glass or quartz.
TW087108395A 1998-05-29 1998-05-29 Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same TW369731B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087108395A TW369731B (en) 1998-05-29 1998-05-29 Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087108395A TW369731B (en) 1998-05-29 1998-05-29 Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same

Publications (1)

Publication Number Publication Date
TW369731B true TW369731B (en) 1999-09-11

Family

ID=57941445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108395A TW369731B (en) 1998-05-29 1998-05-29 Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same

Country Status (1)

Country Link
TW (1) TW369731B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US8283683B2 (en) 2006-11-07 2012-10-09 Opto Tech Corporation Chip-bonding light emitting diode chip

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US8436393B2 (en) 2000-05-26 2013-05-07 Osram Gmbh Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US8129209B2 (en) 2000-10-17 2012-03-06 Osram Ag Method for fabricating a semiconductor component based on GaN
US8809086B2 (en) 2000-10-17 2014-08-19 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US8283683B2 (en) 2006-11-07 2012-10-09 Opto Tech Corporation Chip-bonding light emitting diode chip
US8592234B2 (en) 2006-11-07 2013-11-26 Opto Tech Corporation Method for manufacturing a LED

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