TW369731B - Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same - Google Patents
Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the sameInfo
- Publication number
- TW369731B TW369731B TW087108395A TW87108395A TW369731B TW 369731 B TW369731 B TW 369731B TW 087108395 A TW087108395 A TW 087108395A TW 87108395 A TW87108395 A TW 87108395A TW 369731 B TW369731 B TW 369731B
- Authority
- TW
- Taiwan
- Prior art keywords
- led
- light
- transparent glass
- quartz
- emitting diode
- Prior art date
Links
Landscapes
- Led Device Packages (AREA)
Abstract
This invention relates to a kind of light-emitting diode (LED) permanent substrate by using transparent glass or quartz and its production method, after settling LED component structure on a temporary substrate, and then to stick the LED component onto transparent glass used as permanent substrate, and then removing the aforementioned light-absorbing temporary substrate, such that the light emitted by the LED component will not be absorbed by the substrate and the illumination brightness can be increased. This invention is also about a kind of light-emitting diode (LED) permanent substrate by using transparent glass or quartz.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087108395A TW369731B (en) | 1998-05-29 | 1998-05-29 | Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087108395A TW369731B (en) | 1998-05-29 | 1998-05-29 | Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW369731B true TW369731B (en) | 1999-09-11 |
Family
ID=57941445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087108395A TW369731B (en) | 1998-05-29 | 1998-05-29 | Light-emitting diode (LED) with transparent glass or quartz as permanent substrate and process for the same |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW369731B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7691656B2 (en) | 2000-10-17 | 2010-04-06 | Osram Gmbh | Method for fabricating a semiconductor component based on GaN |
US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
US8283683B2 (en) | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
-
1998
- 1998-05-29 TW TW087108395A patent/TW369731B/en not_active IP Right Cessation
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
US8436393B2 (en) | 2000-05-26 | 2013-05-07 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same |
US7691656B2 (en) | 2000-10-17 | 2010-04-06 | Osram Gmbh | Method for fabricating a semiconductor component based on GaN |
US8129209B2 (en) | 2000-10-17 | 2012-03-06 | Osram Ag | Method for fabricating a semiconductor component based on GaN |
US8809086B2 (en) | 2000-10-17 | 2014-08-19 | Osram Gmbh | Method for fabricating a semiconductor component based on GaN |
US8283683B2 (en) | 2006-11-07 | 2012-10-09 | Opto Tech Corporation | Chip-bonding light emitting diode chip |
US8592234B2 (en) | 2006-11-07 | 2013-11-26 | Opto Tech Corporation | Method for manufacturing a LED |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |