JP2006096984A - 残留物を除去するための組成物及び方法 - Google Patents
残留物を除去するための組成物及び方法 Download PDFInfo
- Publication number
- JP2006096984A JP2006096984A JP2005212358A JP2005212358A JP2006096984A JP 2006096984 A JP2006096984 A JP 2006096984A JP 2005212358 A JP2005212358 A JP 2005212358A JP 2005212358 A JP2005212358 A JP 2005212358A JP 2006096984 A JP2006096984 A JP 2006096984A
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- JP
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- Prior art keywords
- ether
- composition
- glycol
- photoresist
- quaternary ammonium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000003960 organic solvent Substances 0.000 claims abstract description 19
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 18
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 22
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 21
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 18
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 10
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- -1 polyethylene Ethylene glycol monomethyl ether Polymers 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 6
- 239000003112 inhibitor Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 5
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical class ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 5
- 239000002253 acid Chemical class 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical group COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 claims description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical group COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 4
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 claims description 2
- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical compound CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 claims description 2
- NAFPAOUIKZHXDV-UHFFFAOYSA-N 1-propan-2-yloxy-2-(2-propan-2-yloxypropoxy)propane Chemical compound CC(C)OCC(C)OCC(C)OC(C)C NAFPAOUIKZHXDV-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- LJVNVNLFZQFJHU-UHFFFAOYSA-N 2-(2-phenylmethoxyethoxy)ethanol Chemical compound OCCOCCOCC1=CC=CC=C1 LJVNVNLFZQFJHU-UHFFFAOYSA-N 0.000 claims description 2
- HRWADRITRNUCIY-UHFFFAOYSA-N 2-(2-propan-2-yloxyethoxy)ethanol Chemical compound CC(C)OCCOCCO HRWADRITRNUCIY-UHFFFAOYSA-N 0.000 claims description 2
- HUFRRBHGGJPNGG-UHFFFAOYSA-N 2-(2-propan-2-yloxypropoxy)propan-1-ol Chemical compound CC(C)OC(C)COC(C)CO HUFRRBHGGJPNGG-UHFFFAOYSA-N 0.000 claims description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- PXPZSUXFHFQBPY-UHFFFAOYSA-N 2-[2-(2-hydroxyethoxy)ethoxy]ethanol;2-methoxyethyl acetate Chemical compound COCCOC(C)=O.OCCOCCOCCO PXPZSUXFHFQBPY-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- YJTIFIMHZHDNQZ-UHFFFAOYSA-N 2-[2-(2-methylpropoxy)ethoxy]ethanol Chemical compound CC(C)COCCOCCO YJTIFIMHZHDNQZ-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 2
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 claims description 2
- VCCCOJNCORYLID-UHFFFAOYSA-N 2-methoxy-2-methylbutan-1-ol Chemical compound CCC(C)(CO)OC VCCCOJNCORYLID-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 claims description 2
- 229920001174 Diethylhydroxylamine Polymers 0.000 claims description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims description 2
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 2
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- 235000005985 organic acids Nutrition 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- FVRSWMRVYMPTBU-UHFFFAOYSA-M 1-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCC(O)[N+](C)(C)C FVRSWMRVYMPTBU-UHFFFAOYSA-M 0.000 claims 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- GZBUMTPCIKCWFW-UHFFFAOYSA-N triethylcholine Chemical compound CC[N+](CC)(CC)CCO GZBUMTPCIKCWFW-UHFFFAOYSA-N 0.000 claims 1
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- 229910052723 transition metal Inorganic materials 0.000 description 7
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- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical class O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-O triethanolammonium Chemical compound OCC[NH+](CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-O 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】 少なくとも50wt%のグリコールエーテルを含む特定の有機溶媒と少なくとも0.5%の第四級アンモニウム化合物とを含む組成物により、フォトレジスト及び/又はエッチング残留物などの残留物を物品から除去する方法であり、基材をその組成物と接触させることを含む方法。
【選択図】 なし
Description
表Iが示すように、例Aの組成物は、92wt%のBEE、0.6wt%のTBAH、3.6wt%の脱イオン水、2.8wt%のp−TSA、及び1wt%のMEAからなる。例Aは、金属ラインとビアからエッチング残留物とフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Cの組成物は、48wt%のTHFA、5wt%のTMAH、30wt%のPGME、2.8wt%のp−TSA、1wt%のMEA、及び13.2wt%の脱イオン水からなる。例Cは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Eの組成物は、75wt%のPGME、5.5wt%のTBAH、2.8wt%のp−TSA、1wt%のMEA、及び13.2wt%の脱イオン水からなる。例Eは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Hの組成物は、69wt%のPGME、5.5wt%のTBAH、10wt%のDEHA、4wt%のp−TSA、1.4wt%のMEA、及び10.1wt%の脱イオン水からなる。例Hは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Kの組成物は、56wt%のPGPE、0.6wt%のTBAH、39wt%のt−PGME、3wt%のp−TSA、1wt%のMEA、及び0.4wt%の脱イオン水からなる。例Kは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Nの組成物は、66wt%のPGPE、5.5wt%のTMAH、10wt%のPG、3wt%のp−TSA、8wt%のDEHA、2wt%の乳酸、及び5.5wt%の脱イオン水からなる。例Nは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Oの組成物は、66wt%のPGPE、5.5wt%のTMAH、13wt%のPG、8wt%のDEHA、2wt%の乳酸、及び5.5wt%の脱イオン水からなる。例Oは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Pの組成物は、66wt%のPGPE、5.5wt%のTMAH、13wt%のPG、8wt%のDEHA、2wt%の乳酸、及び5.5wt%の脱イオン水からなる。例Pは、遷移金属基材と高k材料からエッチング残留物及びフォトレジストを除去するためのクリーニング及び剥離用組成物である。
例Qの組成物は、80wt%のt−PGME、1.1wt%のTBAH、10wt%のt−BA、6wt%のp−TSA、2wt%のMEA、及び0.9wt%の脱イオン水からなる。例Qは、エッチング残留物及びフォトレジストを金属ライン、そしてまたビア除去するためのクリーニング及び剥離用組成物である。
例A1の組成物は、57.6wt%のPGME、1.1wt%のTBAH、2.4wt%のトリエタノールアンモニウムp−トシレート、5wt%のDEHA、3wt%のレソルシノール、及び20.9wt%の脱イオン水からなる。例A1は、エッチ残留物及びフォトレジストを金属基材、低k材料、そしてまた高k材料除去するためのクリーニング及び剥離用組成物である。
例A2の組成物は、62.7wt%のPGME、1.6wt%のTEAH、1wt%のフッ化テトラメチルアンモニウム、3wt%の乳酸、及び31.7wt%の脱イオン水からなる。例A2は、エッチング残留物及びフォトレジストを金属基材、低k材料、そしてまた高k材料除去するためのクリーニング及び剥離用組成物である。
例A5の組成物は、57wt%のPGME、6wt%のTMAH、4wt%のDEHA、2wt%の乳酸、及び31wt%の脱イオン水からなる。例A5は、エッチング残留物及びフォトレジストを金属基材、低k材料、そしてまた高k材料除去するためのクリーニング及び剥離用組成物である。
Claims (29)
- a)少なくとも約50wt%の有機溶媒であって、該有機溶媒の少なくとも約50%はグリコールエーテルである有機溶媒、及び
b)少なくとも約0.5wt%の第四級アンモニウム化合物、
を含む、残留物を除去するための組成物。 - 前記グリコールエーテルがグリコールモノ(C1〜C6)アルキルエーテルを含む、請求項1に記載の組成物。
- 前記グリコールエーテルが(C1〜C20)アルカンジオール、(C1〜C6)アルキルエーテル、又は(C1〜C20)アルカンジオールジ(C1〜C6)アルキルエーテルを含む、請求項1に記載の組成物。
- 前記グリコールエーテルが、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノプロピルエーテル、ジエチレングリコールモノイソプロピルエーテル、ジエチレングリコールモノブチルエーテル、ジエチレングリコールモノイソブチルエーテル、ジエチレングリコールモノベンジルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、トリエチレングリコールモノメチルエーテル、トリエチレングリコールジメチルエーテル、ポリエチレングリコールモノメチルエーテル、ジエチレングリコールメチルエチルエーテル、トリエチレングリコールエチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、プロピレングリコールモノメチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールモノブチルエーテル、プロピレングリコール、モノプロピルエーテル、ジプロピレングリコールモノメチルエーテル、ジプロピレングリコールモノプロピルエーテル、ジプロピレングリコールモノイソプロピルエーテル、ジプロピレンモノブチルエーテル、ジプロピレングリコールジイソプロピルエーテル、トリプロピレングリコールモノメチルエーテル、1−メトキシ−2−ブタノール、2−メトキシ−1−ブタノール、2−メトキシ−2−メチルブタノール、1,1−ジメトキシエタン、及び2−(2−ブトキシエトキシ)エタノールから選択される、請求項1に記載の組成物。
- 前記グリコールエーテルが、プロピレングリコールモノメチルエーテル、プロピレングリコールモノプロピルエーテル、トリ(プロピレングリコール)モノメチルエーテル、及び2−(2−ブトキシエトキシ)エタノールからなる群から選択される、請求項1に記載の組成物。
- 前記第四級アンモニウム化合物がC1〜C4第四級アンモニウム化合物を含む、請求項1に記載の組成物。
- 前記第四級アンモニウム化合物が、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラプロピルアンモニウム、水酸化テトラブチルアンモニウム、水酸化トリメチルエチルアンモニウム、水酸化(2−ヒドロキシエチル)トリメチルアンモニウム、水酸化(2−ヒドロキシエチル)トリエチルアンモニウム、水酸化(2−ヒドロキシエチル)トリプロピルアンモニウム、及び水酸化(1−ヒドロキシプロピル)トリメチルアンモニウムから選択される、請求項1に記載の組成物。
- 第四級アンモニウム化合物が水酸化テトラメチルアンモニウムを含む、請求項1に記載の組成物。
- 前記グリコールエーテルの量が組成物の少なくとも50wt%である、請求項1に記載の組成物。
- 前記グリコールエーテルの量が組成物の約50〜約70wt%である、請求項1に記載の組成物。
- 前記グリコールエーテルの量が組成物の約50〜約60wt%である、請求項1に記載の組成物。
- 前記第四級アンモニウム化合物の量が組成物の約0.5〜約15wt%である、請求項1に記載の組成物。
- 前記第四級アンモニウム化合物の量が約0.5〜約5wt%である、請求項12に記載の組成物。
- 補助的有機溶媒を更に含む、請求項1に記載の組成物。
- 前記補助的有機溶媒がC2〜C20アルカンジオール又はC3〜C20アルカントリオールを含む、請求項14に記載の組成物。
- 前記補助的有機溶媒がプロピレングリコールを含む、請求項14に記載の組成物。
- 前記プロピレングリコールの量が約0.1〜約40wt%である、請求項16に記載の組成物。
- フッ素含有化合物を含まない、請求項1に記載の組成物。
- フッ素含有化合物を含む、請求項1に記載の組成物。
- 約40wt%以下の水を更に含む、請求項1に記載の組成物。
- 約20wt%までの腐食防止剤を更に含む、請求項1に記載の組成物。
- 前記腐食防止剤がヒドロキシルアミン、その酸性塩、有機酸、その酸性塩、及びそれらの混合物を含む、請求項21に記載の組成物。
- 前記腐食防止剤がヒドロキシルアミンを含む、請求項21に記載の組成物。
- 前記ヒドロキシルアミンがジエチルヒドロキシルアミンを含む、請求項23に記載の組成物。
- 基材からフォトレジストもしくはエッチング残留物又はその両方を除去する方法であって、該基材を、
a)少なくとも約50wt%の有機溶媒であって、該有機溶媒の少なくとも約50%はグリコールエーテルである有機溶媒、及び
b)少なくとも約0.5wt%の第四級アンモニウム化合物、
を含む組成物と接触させることを含む除去方法。 - 前記基材が、金属、シリコン、ケイ化物、層間絶縁材料、及び高k誘電材料からなる群から選択される材料をも含む、請求項25に記載の方法。
- パターンを画定する方法であって、
基材にフォトレジストを塗布すること、
リソグラフィー法によって該フォトレジストにパターンを画定すること、
該パターンを該基材に転写すること、
該基材を、
a)少なくとも約50wt%の有機溶媒であって、該有機溶媒の少なくとも約50%はグリコールエーテルである有機溶媒、及び
b)少なくとも約0.5wt%の第四級アンモニウム化合物、
を含む組成物と接触させることにより、該基材からフォトレジストもしくはエッチング残留物又はその両方を除去すること、
を含むパターン画定方法。 - 前記フォトレジストがポジ型フォトレジストである、請求項27に記載の方法。
- 前記フォトレジストがネガ型フォトレジストである、請求項27に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/896,589 US9217929B2 (en) | 2004-07-22 | 2004-07-22 | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
US10/896,589 | 2004-07-22 |
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JP2006096984A true JP2006096984A (ja) | 2006-04-13 |
JP4819429B2 JP4819429B2 (ja) | 2011-11-24 |
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EP (1) | EP1619557B1 (ja) |
JP (1) | JP4819429B2 (ja) |
KR (1) | KR100786606B1 (ja) |
CN (2) | CN1724626B (ja) |
IL (1) | IL169681A0 (ja) |
SG (2) | SG136954A1 (ja) |
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IL169681A0 (en) | 2007-07-04 |
US9217929B2 (en) | 2015-12-22 |
CN1724626A (zh) | 2006-01-25 |
KR100786606B1 (ko) | 2007-12-21 |
EP1619557B1 (en) | 2015-03-25 |
TW200604762A (en) | 2006-02-01 |
EP1619557A1 (en) | 2006-01-25 |
JP4819429B2 (ja) | 2011-11-24 |
US20120295828A1 (en) | 2012-11-22 |
SG136954A1 (en) | 2007-11-29 |
CN1724626B (zh) | 2010-10-27 |
KR20060053853A (ko) | 2006-05-22 |
CN101794088B (zh) | 2013-04-24 |
CN101794088A (zh) | 2010-08-04 |
TWI282043B (en) | 2007-06-01 |
SG119361A1 (en) | 2006-02-28 |
US20060016785A1 (en) | 2006-01-26 |
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