CN1724626B - 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 - Google Patents
用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 Download PDFInfo
- Publication number
- CN1724626B CN1724626B CN2005100875451A CN200510087545A CN1724626B CN 1724626 B CN1724626 B CN 1724626B CN 2005100875451 A CN2005100875451 A CN 2005100875451A CN 200510087545 A CN200510087545 A CN 200510087545A CN 1724626 B CN1724626 B CN 1724626B
- Authority
- CN
- China
- Prior art keywords
- composition
- weight
- glycol
- ether
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 111
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 title claims description 40
- 238000005530 etching Methods 0.000 title abstract description 13
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims abstract description 15
- 239000003960 organic solvent Substances 0.000 claims abstract description 13
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 24
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 23
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 22
- -1 glycol ethers Chemical class 0.000 claims description 21
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 21
- 238000005260 corrosion Methods 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 239000003112 inhibitor Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims description 8
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 claims description 8
- 150000002443 hydroxylamines Chemical class 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- UWIULCYKVGIOPW-UHFFFAOYSA-N Glycolone Natural products CCOC1=C(CC=CC)C(=O)N(C)c2c(O)cccc12 UWIULCYKVGIOPW-UHFFFAOYSA-N 0.000 claims description 6
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 6
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 6
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- 150000007524 organic acids Chemical group 0.000 claims description 5
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 claims description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 239000003989 dielectric material Substances 0.000 claims description 4
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229940074391 gallic acid Drugs 0.000 claims description 3
- 235000004515 gallic acid Nutrition 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 2
- VXMQKONTARQGPP-UHFFFAOYSA-N (ethoxyamino)oxyethane Chemical compound CCONOCC VXMQKONTARQGPP-UHFFFAOYSA-N 0.000 claims description 2
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 claims description 2
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 claims description 2
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 claims description 2
- RQUBQBFVDOLUKC-UHFFFAOYSA-N 1-ethoxy-2-methylpropane Chemical compound CCOCC(C)C RQUBQBFVDOLUKC-UHFFFAOYSA-N 0.000 claims description 2
- FVRSWMRVYMPTBU-UHFFFAOYSA-M 1-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCC(O)[N+](C)(C)C FVRSWMRVYMPTBU-UHFFFAOYSA-M 0.000 claims description 2
- NAFPAOUIKZHXDV-UHFFFAOYSA-N 1-propan-2-yloxy-2-(2-propan-2-yloxypropoxy)propane Chemical compound CC(C)OCC(C)OCC(C)OC(C)C NAFPAOUIKZHXDV-UHFFFAOYSA-N 0.000 claims description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 2
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 claims description 2
- ZFDNAYFXBJPPEB-UHFFFAOYSA-M 2-hydroxyethyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCO ZFDNAYFXBJPPEB-UHFFFAOYSA-M 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 2
- XOBKSJJDNFUZPF-UHFFFAOYSA-N Methoxyethane Chemical compound CCOC XOBKSJJDNFUZPF-UHFFFAOYSA-N 0.000 claims description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 2
- CRAFBOZKMVZBDP-UHFFFAOYSA-N [OH-].C(C)[NH3+].C[NH+](C)C.[OH-] Chemical compound [OH-].C(C)[NH3+].C[NH+](C)C.[OH-] CRAFBOZKMVZBDP-UHFFFAOYSA-N 0.000 claims description 2
- MHDVGSVTJDSBDK-UHFFFAOYSA-N dibenzyl ether Chemical compound C=1C=CC=CC=1COCC1=CC=CC=C1 MHDVGSVTJDSBDK-UHFFFAOYSA-N 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 claims description 2
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 2
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 claims description 2
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 claims description 2
- SYNHCENRCUAUNM-UHFFFAOYSA-N Nitrogen mustard N-oxide hydrochloride Chemical compound Cl.ClCC[N+]([O-])(C)CCCl SYNHCENRCUAUNM-UHFFFAOYSA-N 0.000 claims 2
- 150000003868 ammonium compounds Chemical group 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 18
- 239000008367 deionised water Substances 0.000 description 15
- 229910021641 deionized water Inorganic materials 0.000 description 15
- 238000012360 testing method Methods 0.000 description 15
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 14
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 12
- 238000004380 ashing Methods 0.000 description 8
- SAOKZLXYCUGLFA-UHFFFAOYSA-N bis(2-ethylhexyl) adipate Chemical compound CCCCC(CC)COC(=O)CCCCC(=O)OCC(CC)CCCC SAOKZLXYCUGLFA-UHFFFAOYSA-N 0.000 description 7
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 7
- 229910052723 transition metal Inorganic materials 0.000 description 7
- 150000003624 transition metals Chemical class 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004310 lactic acid Substances 0.000 description 6
- 235000014655 lactic acid Nutrition 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical class OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- FCAJYRVEBULFKS-UHFFFAOYSA-N 2-(oxolan-2-yl)ethanol Chemical compound OCCC1CCCO1 FCAJYRVEBULFKS-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003352 sequestering agent Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-O triethanolammonium Chemical compound OCC[NH+](CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-O 0.000 description 2
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 2
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- HUWFDQSAXOIUNP-UHFFFAOYSA-N 2-butan-2-yloxyethanol Chemical compound CCC(C)OCCO HUWFDQSAXOIUNP-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 1
- 241000588731 Hafnia Species 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- NSXCBNDGHHHVKT-UHFFFAOYSA-N [Ti].[Sr].[Ba] Chemical compound [Ti].[Sr].[Ba] NSXCBNDGHHHVKT-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000000010 aprotic solvent Substances 0.000 description 1
- ZXVOCOLRQJZVBW-UHFFFAOYSA-N azane;ethanol Chemical compound N.CCO ZXVOCOLRQJZVBW-UHFFFAOYSA-N 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000006184 cosolvent Substances 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 150000005690 diesters Chemical class 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
含有一些有机溶剂和季铵化合物的组合物能够将残留物例如光致抗蚀剂和/或蚀刻残留物从物品上除去,其中所述有机溶剂包含至少505重量的二醇醚。
Description
发明背景
在微电子结构的制造过程中涉及很多步骤。在集成电路的制造方案中,有时需要将半导体的不同表面选择性地蚀刻。历史上,在不同程度上,已经成功地使用了多种显著不同类型蚀刻方法来选择性地除去材料。此外,微电子结构内不同层的选择性蚀刻被视为集成电路制造工艺中的关键决定性步骤。
对于导孔(via)、金属线和沟槽形成期间的图案(pattern)传递,反应性离子蚀刻(RIE)正不断地成为所选择的方法。例如,需要多层互联线路后端的复杂半导体装置例如高级DRAMS和微处理器利用RIE来产生导孔、金属线和沟槽结构。通过绝缘夹层,导孔被用于提供硅、硅化物或金属线路的一个电平与线路的下一个电平之间的接触。金属线是用作装置互连的传导结构。沟槽结构用于形成金属线结构。导孔、金属线和沟槽结构通常暴露出金属和合金例如Al,Al和Cu合金,Cu,Ti,TiN,Ta,TaN,W,TiW,硅或硅化物,例如钨、钛或钴的硅化物。RIE方法通常会留下残留物(复合混合物),所述残留物可包括再溅射的氧化材料以及可能的有机材料,残留物来自用于平版印刷限定导孔、金属线和/或沟槽的光致抗蚀剂和抗反射涂层材料。
因此希望提供能够除去残留物例如残留光致抗蚀剂和/或加工残留物,例如由于使用等离子体和/或RIE的选择性蚀刻所致的残留物的选择性清洁组合物和方法。此外,希望提供能够除去残留物例如光致抗蚀剂和蚀刻残留物的选择性清洁组合物和方法,相对于可能也暴露于清洁组合物的金属、高κ绝缘材料、硅、硅化物和/或电平间绝缘材料,包括低κ绝缘材料,例如沉积的氧化物,这样的组合物对于残留物表现出高选择性。希望提供与敏感性低κ膜例如HSQ、MSQ、FQx、黑金刚石和TEOS(四乙基硅酸酯)相容并且可以与这样的膜一起使用的组合物。
发明概述
本发明公开的组合物能够从基片上选择性地除去残留物例如光致抗蚀剂和加工残留物,同时不会在不需要程度上侵蚀可能也暴露于组合物的金属、低κ和/或高κ绝缘材料。此外,本发明公开的组合物可表现出一些绝缘材料例如二氧化硅的极小蚀刻速度。
在一个方面,本发明提供了用于除去残留物的组合物,所述组合物包含至少约50%重量的有机溶剂,其中至少约50%的包含在组合物中的有机溶剂是二醇醚;和至少约0.5%重量的季铵化合物。
在另一个方面,本发明组合物还可以包含辅助溶剂,包括至少一种二元醇和/或多元醇。在另一个方面,本发明组合物还包含水和任选腐蚀抑制剂。
本发明还公开了用于从基片上除去残留物,包括光致抗蚀剂和/或蚀刻残留物的方法,所述方法包括将基片与上述本发明组合物接触。
实施本发明的各种最佳方式
本发明组合物和方法都包括选择性地除去残留物,例如光致抗蚀剂和/或加工残留物,例如通过蚀刻,特别是反应性离子蚀刻产生的残留物。在涉及物品例如用于微电子装置的基片的清洗方法中,欲除去的典型污染物可包括例如有机化合物,如暴露的光致抗蚀剂材料、光致抗蚀剂残留物、UV或X-射线硬化的光致抗蚀剂、含有C-F的聚合物、低和高分子量聚合物以及其它有机蚀刻残留物;无机化合物,例如金属氧化物、来自CMP浆液的陶瓷颗粒以及其它无机蚀刻残留物;含有金属的化合物,例如有机金属残留物和金属有机化合物;离子和中性、轻和重无机(金属)种类、含水和不溶性材料,包括通过加工例如平面化和蚀刻处理而产生的颗粒。在一个具体的实施方案中,所除去的残留物是加工残留物例如通过反应性离子蚀刻产生的残留物。
此外,光致抗蚀剂和/或加工残留物通常存在于还包括以下材料的物品中:金属,硅,硅酸盐和/或夹层绝缘材料例如沉积的氧化硅和衍生化的氧化硅例如HSQ、MSQ、FOX、TEOX和Spin-On Glass,和/或高κ材料例如硅酸铪、氧化铪、钡锶钛(BST)、Ta2O5和TiO2,其中光致抗蚀剂和/或残留物和金属、硅、硅化物、夹层绝缘材料和/或高κ材料都将与清洁组合物接触。本发明所提供的组合物和方法能选择性地除去残留物,同时不显著侵蚀金属、硅、二氧化硅、夹层绝缘材料和/或高κ材料。在一个实施方案中,本发明组合物可适于包含敏感性低κ膜的结构。在一些实施方案中,基片可含有金属,例如但不限于铜、铜合金、钛、氮化钛、钨、钛/钨、铝和/或铝合金。本发明组合物可包含至少约50%重量的有机溶剂,其中至少约50%的包含在组合物中的有机溶剂是二醇醚;和至少约0.5%重量的季铵化合物。在一些实施方案中,组合物可包含约50%-约70%的二醇醚,或约50%-约60%的二醇醚。
二醇醚通常可以与水混溶,并且可包括二醇一(C1-C6)烷基醚和二醇二(C1-C6)醚,例如但不限于(C1-C20)烷二醇(C1-C6)烷基醚和(C1-C20)烷二醇二(C1-C6)烷基醚。
二醇醚的实例是乙二醇一甲醚、乙二醇一乙醚、乙二醇一丁醚、乙二醇二甲醚、乙二醇二乙醚、二甘醇一甲醚、二甘醇一乙醚、二甘醇一丙醚、二甘醇一异丙醚、二甘醇一丁醚、二甘醇一异丁醚、二甘醇一苄醚、二甘醇二甲醚、二甘醇二乙醚、三甘醇一甲醚、三甘醇二甲醚、丙二醇一甲醚、二甘醇甲乙醚、三甘醇一甲醚乙酸酯、乙二醇一乙醚乙酸酯、丙二醇一甲醚、丙二醇二甲醚、丙二醇一丁醚、丙二醇一丙醚、一缩二丙二醇一甲醚、一缩二丙二醇一丙醚、一缩二丙二醇一异丙醚、一缩二丙二醇一丁醚、一缩二丙二醇二异丙醚、二缩三丙二醇一甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧基乙烷和2-(2-丁氧基乙氧基)乙醇。
二醇醚的更典型实例是丙二醇一甲醚、丙二醇一丙醚、二缩三丙二醇一甲醚和2-(2-丁氧基乙氧基)乙醇。
如上所述,本发明组合物还包括一种或多种季铵化合物。季铵化合物的实例包括低级烷基(例如(C1-C4))季铵化合物,并且包括氢氧化四甲基铵(TMAH)、氢氧化四乙基铵、氢氧化四丁基铵、氢氧化四丙基铵、氢氧化三甲基乙基铵、氢氧化(2-羟基乙基)三甲基铵、氢氧化(2-羟基乙基)三乙基铵、氢氧化(2-羟基乙基)三丙基铵和氢氧化(1-羟基丙基)三甲基铵。在一些实施方案中,将季铵化合物以游离碱或氢氧化物的形式加到组合物中。季铵化合物的含量为约0.5%-15%。在一些实施方案中,本发明组合物可包含约0.5%-约5%或者约1%-约5%季铵化合物。
在一些实施方案中,本发明组合物可包含一种或多种辅助性有机溶剂。在这些实施方案中,有机溶剂可以与水混溶,并且包括二元醇和多元醇,例如二醇和多元醇,如(C2-C20)烷二醇和(C3-C20)烷三醇,环状醇和取代的醇。这些辅助溶剂的具体实例是丙二醇、四氢呋喃甲醇,双丙酮醇和1,4-环己烷二甲醇。在这些实施方案中,辅助有机助溶剂的含量为0.1%-约40%或0.1%-20%重量。
本发明组合物可任选包含最高达约40%重量的水或最高达约35%重量的水或最高达约10%重量的水。在其中向组合物内加入水的实施方案中,水是去离子水。
本发明组合物还可以任选包含最高达约20%重量或约0.2%-约19%重量的腐蚀抑制剂。腐蚀抑制剂的实例包括但不限于有机酸、有机酸盐、儿茶酚、没食子酸、苯并三唑(BZT)、间苯二酚、其它酚、酸或三唑类化合物,和更常用的羟基胺化合物或其酸式盐。优选的羟基胺化合物是二乙基羟基胺和乳酸与柠檬酸及其盐。在现有技术中,由于其能够侵蚀,通常认为羟基胺化合物与铜不相容。然而,在本发明组合物中,它们令人惊奇地抑制铜腐蚀。
在一些实施方案中,本发明组合物可包括含氟化合物。含氟化合物可包括通式R1R2R3R4NF化合物,其中R1、R2、R3和R4分别独立地为氢、醇基团、烷氧基、烷基及其混合物。这样的化合物的实例是氟化铵、氟化四甲基铵和氟化四乙基铵。含氟化合物的其它实例包括氟硼酸、氢氟酸和胆碱氟化物。在这些实施方案中,含氟化合物或其混合物以占组合物总重量0.1%-约20%或者0.1%-10%的量存在。在一些实施方案中,将含氟化合物以氟化物盐的形式加到本发明组合物中。
本发明组合物还包含一种或多种下列添加剂:表面活性剂、螯合剂、化学调节剂、染料、杀生物剂和其它添加剂。某些代表性实例包括炔醇(非离子烷氧基化和/或自乳化炔二醇表面活性剂)及其衍生物、醇、季铵和二季铵、酰胺(包括非质子溶剂例如二甲基甲酰胺和二甲基乙酰胺)、烷基链烷醇胺(例如二乙醇乙基胺)和螯合剂例如β-二酮、β-酮亚胺、羧酸、基于苹果酸和酒石酸的酯和二酯及其衍生物和叔胺、二叔胺和三叔胺。
本发明组合物与低κ膜,例如HSQ、(FOx)、MSQ、SiLK等,包括含有氟化物的那些相容。本发明制剂还在低温下有效地剥离光致抗蚀剂,包括正性和负性光致抗蚀剂和等离子体蚀刻残留物例如有机残留物、有机金属残留物、无机残留物、金属氧化物或光致抗蚀剂复合物,同时对含有铝、铜、钛的基片的侵蚀力非常低。此外,本发明组合物与多种不同的高介电常数材料相容。
在制造期间,将光致抗蚀剂层涂布在基片上。使用光刻法,在光致抗蚀剂层上限定图案。由此将加上图案的光致抗蚀剂层进行等离子体蚀刻,这样图案就传递到基片上。在蚀刻阶段产生了蚀刻残留物。某些在本发明中使用的基片被灰化,某些没有被灰化。当基片被灰化时,欲清除或剥离的主要残留物是蚀刻剂残留物。如果基片没有被灰化,则欲清除或剥离的主要残留物是蚀刻残留物和光致抗蚀剂。
本发明组合物可用于在低温除去蚀刻后蚀刻剂和灰分、有机和无机残留物以及半导体基片,同时具有低侵蚀力。使用本发明组合物的剥离和清除方法一般这样来进行:在25℃至85℃范围内的一个或多个温度下将基片在剥离剂/清洁剂组合物内浸泡3分钟至1小时。然而,本发明组合物可用于本领域已知的任何方法,所述方法使用清洁液来除去光致抗蚀剂、灰分或蚀刻残留物和/或残余物。
提供以下非限制性实例来进一步举例说明本发明。
在以下实施例中的光致抗蚀剂被施以一个如下所述的方法。
将正性光致抗蚀剂旋转涂布在基片上。正性光致抗蚀剂包含重氮萘醌和酚醛清漆树脂。涂布后,将光致抗蚀剂在约90℃烘焙约90秒。通过经由带图案的面模暴露于i-线(365nm)射线,然后展开来在光致抗蚀剂上限定图案。然后通过等离子体蚀刻将图案传递到基片上。
将负性光致抗蚀剂旋转涂布在基片上。涂布后,将光致抗蚀剂在约90℃烘焙约90秒。通过经由带图案的面模暴露于深紫外线(248nm),然后展开来在光致抗蚀剂上限定图案。然后通过等离子体蚀刻将图案传递到基片上。
本发明剥离剂和清洁剂组合物一般是通过将组分在容器中于室温混合在一起直至所有固体溶解而制得的。含水剥离剂和清洁剂组合物的实例列在表I中。蚀刻速度数据和清洁数据的总结分别列在表II和III中。
在制造期间,将光致抗蚀剂层涂布在基片上。使用光刻法,在光致抗蚀剂层上限定图案。由此将加上图案的光致抗蚀剂层进行等离子体蚀刻,这样图案就传递到基片上。在蚀刻阶段产生了蚀刻残留物。某些在本发明中使用的基片被灰化,某些没有被灰化。当基片被灰化时,欲清除的主要残留物是蚀刻剂残留物。如果基片没有被灰化,则欲清除或剥离的主要残留物是蚀刻残留物和光致抗蚀剂。
表I中的所有实例都能非常有效地剥离和清除光致抗蚀剂、蚀刻剂和灰化残留物。处理温度通常为40℃或更低,每一实例可在成批的清洁处理、喷雾工具和单片工具中使用。
对于下表,除非另有说明,否则所有的量都是以重量百分比给出,剥去加至100%重量。金属蚀刻速度是用CDE ResMap 273 Four PointProbe(E-M-DGLAB-007)测定的。将500ml测试溶液置于600ml烧杯中,搅拌,如果需要的话加热至特定温度。如果所测试的金属是钛,则开始时需要浸在磷酸中。使用CDE ResMap 273 Four Point Probe测定片的初始厚度。测定初始厚度之后,将测试片浸在测试溶液中。如果仅测试一个测试片,则向溶液中加入假片。5分钟后,把测试片从测试溶液中取出来,用去离子水洗涤洗涤3分钟,然后在氮气下完全干燥。如果使用负性剥离剂溶液,则在水洗之前,将测试片在溶剂例如DMAC或IPA(异丙醇)中进行3分钟的中间洗涤。测定每一个片的厚度,如果需要的话,在测试片上重复进行该操作。
使用Nanospec AFT 181(E-M-DGLAB-0009)测定氧化物蚀刻速度。将200ml测试溶液置于250ml烧杯中,搅拌,如果需要的话加热至特定温度。将三个物品在欲测试的每个片上划线。在每个片上标记的区域是将进行测定的区域。取每个片的初始测定值。初始测定之后,将片在测试溶液中浸泡5分钟。如果含有溶液的烧杯中仅放置一个片,则在烧杯中放置一个假片。5分钟后,将每个测试片用去离子水洗涤3分钟,并在氮气下干燥。如果使用负性剥离剂溶液,则在水洗涤之前,使用DMAC、IPA或另一合适的溶剂来将测试片洗涤3分钟。取在每个片上的划线区域的测定值,并且如果需要的话,重复该操作。
表I:样本制剂
表I中使用的缩写如下:
PGME 丙二醇甲醚
THFA 四氢呋喃甲醇
PG 丙二醇
BEE 2-(2-丁氧基)乙醇
PGPE 丙二醇丙醚
DEHA 二羟基胺
t-BA 三丁基胺
t-PGME 二缩三丙二醇一甲醚
TMAH 氢氧化四甲基铵
TBAH 氢氧化四丁基铵
p-TSA 对甲苯磺酸
MEA 乙醇胺
TMAF 氟化四甲基铵
TEAH 氢氧化四乙基铵
TEA/p-TSA 对甲苯磺酸三乙醇铵
MEA/p-TSA 对甲苯磺酸乙醇铵
实施例A
如表I所示,实施例A的组合物由92%重量的BEE、0.6%重量的TBAH、3.6%重量的去离子水、2.8%重量的p-TSA和1%重量的MEA组成。实施例A是用于从金属线和导孔中除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例C
实施例C的组合物由48%重量的THFA、5%重量的TMAH、30%重量的PGME、2.8%重量的p-TSA、1%重量的MEA和13.2%重量的去离子水组成。实施例C是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例E
实施例E的组合物由75%重量的PGME、5.5%重量的TBAH、2.8%重量的p-TSA、1%重量的MEA和13.2%重量的去离子水组成。实施例E是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例H
实施例H的组合物由69%重量的PGME、5.5%重量的TBAH、10%重量的DEHA、4%重量的p-TSA、1.4%重量的MEA和10.1%重量的去离子水组成。实施例H是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例K
实施例K的组合物由56%重量的PGPE、0.6%重量的TBAH、39%重量的t-PGME、3%重量的p-TSA、1%重量的MEA和0.4%重量的去离子水组成。实施例K是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例N
实施例N的组合物由66%重量的PGPE、5.5%重量的TMAH、10%重量的PG、3%重量的p-TSA、8%重量的DEHA、2%重量的乳酸和5.5%重量的去离子水组成。实施例N是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例O
实施例O的组合物由66%重量的PGPE、5.5%重量的TMAH、13%重量的PG、8%重量的DEHA、2%重量的乳酸和5.5%重量的去离子水组成。实施例O是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例P
实施例P的组合物由66%重量的PGPE、5.5%重量的TMAH、13%重量的PG、8%重量的DEHA、2%重量的乳酸和5.5%重量的去离子水组成。实施例P是用于从过渡金属基片和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例Q
实施例Q的组合物由80%重量的t-PGME、1.1%重量的TBAH、10%重量的t-BA、6%重量的p-TSA、2%重量的MEA和0.9%重量的去离子水组成。实施例Q是用于从金属线和导孔中除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例A1
实施例A1的组合物由57.6%重量的PGME、1.1%重量的TBAH、2.4%重量的对甲苯磺酸三乙醇铵、5%重量的DEHA、3%重量的间苯二酚和20.9%重量的去离子水组成。实施例A1是用于从金属基片、低κ材料和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例A2
实施例A2的组合物由62.7%重量的PGME、1.6%重量的TEAH、1%重量的氟化四甲基铵、3%重量的乳酸和31.7%重量的去离子水组成。实施例A2是用于从金属基片、低κ材料和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
实施例A5
实施例A5的组合物由57%重量的PGME、6%重量的TMAH、4%重量的DEHA、2%重量的乳酸和31%重量的去离子水组成。实施例A5是用于从金属基片、低κ材料和高κ材料上除去蚀刻残留物和光致抗蚀剂的清洁和剥离组合物。
表II:蚀刻速度数据的总结
表III:清洁数据的总结
Nt=未测试;Part.Corr.=部分金属腐蚀;Corr.=金属腐蚀;
√=部分清洁的;√=完全清洁的;X=未清洁的。
Claims (32)
1.用于除去包括光致抗蚀剂残留物、蚀刻残留物及其组合的残留物的组合物,所述组合物包含:
a)50%重量或大于50%重量的包含二醇醚的有机溶剂,其中至少50%重量的所述有机溶剂是二醇醚;
b)0.5%重量-15%重量的季铵化合物;
c)大于0至最高达20%重量的腐蚀抑制剂,其中所述腐蚀抑制剂是至少一种选自有机酸、有机酸盐、酚、苯并三唑、羟基胺化合物和羟基胺化合物酸式盐及其混合物的抑制剂;和
d)辅助有机溶剂,其中所述辅助有机溶剂包含C2-C20烷二醇和C3-C20烷三醇。
2.权利要求1的组合物,其中所述二醇醚包含二醇一(C1-C6)烷基醚。
3.权利要求1的组合物,其中所述二醇醚包含(C1-C20)烷二醇(C1-C6)烷基醚或(C1-C20)烷二醇二(C1-C6)烷基醚。
4.权利要求1的组合物,其中所述二醇醚选自乙二醇一甲醚、乙二醇一乙醚、乙二醇一丁醚、乙二醇二甲醚、乙二醇二乙醚、二甘醇一甲醚、二甘醇一乙醚、二甘醇一丙醚、二甘醇一异丙醚、二甘醇一丁醚、二甘醇一异丁醚、二甘醇一苄醚、二甘醇二甲醚、二甘醇二乙醚、三甘醇一甲醚、三甘醇二甲醚、二甘醇甲乙醚、乙二醇一乙醚乙酸酯、丙二醇一甲醚、丙二醇二甲醚、丙二醇一丁醚、丙二醇一丙醚、一缩二丙二醇一甲醚、一缩二丙二醇一丙醚、一缩二丙二醇一异丙醚、一缩二丙二醇一丁醚、一缩二丙二醇二异丙醚、二缩三丙二醇一甲醚、1-甲氧基-2-丁醇、2-甲氧基-1-丁醇、2-甲氧基-2-甲基丁醇、1,1-二甲氧基乙烷和2-(2-丁氧基乙氧基)乙醇。
5.用于除去包括光致抗蚀剂残留物、蚀刻残留物及其组合的残留物的组合物,所述组合物包含:
a)50%重量-70%重量的二醇醚,其中所述二醇醚选自丙二醇一甲醚、丙二醇一丙醚和二缩三丙二醇一甲醚;
b)0.5%重量-15%重量的季铵化合物;和
c)大于0至最高达20%重量的腐蚀抑制剂,其中所述腐蚀抑制剂是至少一种选自有机酸、有机酸盐、酚、苯并三唑、羟基胺化合物和羟基胺化合物酸式盐及其混合物的抑制剂。
6.权利要求1的组合物,其中所述季铵化合物包含C1-C4季铵化合物。
7.权利要求1的组合物,其中所述季铵化合物选自氢氧化四甲基铵、氢氧化四乙基铵、氢氧化四丙基铵、氢氧化四丁基铵、氢氧化三甲基乙基铵、氢氧化(2-羟基乙基)三甲基铵、氢氧化(2-羟基乙基)三乙基铵、氢氧化(2-羟基乙基)三丙基铵和氢氧化(1-羟基丙基)三甲基铵。
8.权利要求1的组合物,其中所述季铵化合物包含氢氧化四甲基铵。
9.权利要求1的组合物,其中所述二醇醚的量为组合物重量的至少50%。
10.权利要求1的组合物,其中所述二醇醚的量为组合物重量的50%-60%。
11.权利要求1的组合物,其中所述季铵化合物的量为组合物重量的0.5%-5%。
12.权利要求1的组合物,其中所述辅助有机溶剂包含丙二醇。
13.权利要求12的组合物,其中丙二醇的量为0.1%-40%重量。
14.权利要求1或5的组合物,其中所述组合物不含有含氟化合物。
15.权利要求1或5的组合物,其中所述组合物还含有含氟化合物。
16.权利要求5的组合物,其中所述组合物还包含大于0至最高达40%重量的水。
17.权利要求1或5的组合物,其中所述腐蚀抑制剂包含羟基胺或其酸式盐或其混合物。
18.权利要求17的组合物,其中所述羟基胺包含二乙基羟基胺或其酸式盐或其混合物。
19.用于将包括光致抗蚀剂残留物、蚀刻残留物或其组合的残留物从基片上除去的方法,其中所述方法包括将所述基片与权利要求1或5的组合物接触。
20.权利要求19的方法,其中所述基片还包括选自下列的材料:金属、硅、硅酸盐、夹层绝缘材料和高κ绝缘材料。
21.用于限定图案的方法,其中所述方法包括将光致抗蚀剂层涂布在基片上,
使用光刻法在光致抗蚀剂层上限定图案,
将图案传递到基片上,
通过将基片与权利要求1或5的组合物接触来将光致抗蚀剂或蚀刻残留物或二者从基片上除去。
22.权利要求21的方法,其中所述光致抗蚀剂是正性光致抗蚀剂。
23.权利要求21的方法,其中所述光致抗蚀剂是负性光致抗蚀剂。
24.权利要求1的组合物,其中所述腐蚀抑制剂的量为0.2%重量-19%重量。
25.权利要求1的组合物,其中所述辅助有机溶剂的量为0.1%重量-20%重量。
26.权利要求16的组合物,其中水的最大量为10%重量。
27.权利要求19的方法,其中除去蚀刻残留物。
28.权利要求21的方法,其中除去蚀刻残留物。
29.权利要求1的组合物,其中所述酚是儿茶酚。
30.权利要求1的组合物,其中所述有机酸是没食子酸。
31.权利要求5的组合物,其中所述酚是儿茶酚。
32.权利要求5的组合物,其中所述有机酸是没食子酸。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/896,589 US9217929B2 (en) | 2004-07-22 | 2004-07-22 | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
US10/896589 | 2004-07-22 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101139780A Division CN101794088B (zh) | 2004-07-22 | 2005-07-22 | 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1724626A CN1724626A (zh) | 2006-01-25 |
CN1724626B true CN1724626B (zh) | 2010-10-27 |
Family
ID=34937875
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005100875451A Expired - Fee Related CN1724626B (zh) | 2004-07-22 | 2005-07-22 | 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 |
CN2010101139780A Expired - Fee Related CN101794088B (zh) | 2004-07-22 | 2005-07-22 | 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2010101139780A Expired - Fee Related CN101794088B (zh) | 2004-07-22 | 2005-07-22 | 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 |
Country Status (8)
Country | Link |
---|---|
US (2) | US9217929B2 (zh) |
EP (1) | EP1619557B1 (zh) |
JP (1) | JP4819429B2 (zh) |
KR (1) | KR100786606B1 (zh) |
CN (2) | CN1724626B (zh) |
IL (1) | IL169681A0 (zh) |
SG (2) | SG119361A1 (zh) |
TW (1) | TWI282043B (zh) |
Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4446779C2 (de) * | 1994-12-24 | 1996-12-19 | Daimler Benz Ag | Anordnung zur berührungslosen induktiven Übertragung elektrischer Leistung |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
US9217929B2 (en) | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
JP4776191B2 (ja) * | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
US20060116313A1 (en) * | 2004-11-30 | 2006-06-01 | Denise Geitz | Compositions comprising tannic acid as corrosion inhibitor |
KR101331747B1 (ko) * | 2005-01-27 | 2013-11-20 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 반도체 기판 처리 조성물 |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
JP4988165B2 (ja) * | 2005-03-11 | 2012-08-01 | 関東化学株式会社 | フォトレジスト剥離液組成物及びフォトレジストの剥離方法 |
US7365045B2 (en) * | 2005-03-30 | 2008-04-29 | Advanced Tehnology Materials, Inc. | Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide |
TWI339780B (en) * | 2005-07-28 | 2011-04-01 | Rohm & Haas Elect Mat | Stripper |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7674755B2 (en) | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
TWI323391B (en) * | 2006-03-21 | 2010-04-11 | Daxin Material Corp | Remover solution composition and use thereof |
EP2003612A4 (en) | 2006-03-31 | 2010-10-13 | Nikon Corp | IMAGE PROCESSING |
US8288330B2 (en) * | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
US8685909B2 (en) * | 2006-09-21 | 2014-04-01 | Advanced Technology Materials, Inc. | Antioxidants for post-CMP cleaning formulations |
US20080076688A1 (en) * | 2006-09-21 | 2008-03-27 | Barnes Jeffrey A | Copper passivating post-chemical mechanical polishing cleaning composition and method of use |
EP2082024A4 (en) * | 2006-09-25 | 2010-11-17 | Advanced Tech Materials | COMPOSITIONS AND METHODS FOR REMOVING A PHOTORESISTANT AGENT FOR RECYCLING A SILICON GALETTE |
CN101162369A (zh) * | 2006-10-13 | 2008-04-16 | 安集微电子(上海)有限公司 | 一种低蚀刻性光刻胶清洗剂及其清洗方法 |
US20080096785A1 (en) * | 2006-10-19 | 2008-04-24 | Air Products And Chemicals, Inc. | Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue |
US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
CN101187787A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂及其清洗方法 |
JP4499751B2 (ja) * | 2006-11-21 | 2010-07-07 | エア プロダクツ アンド ケミカルズ インコーポレイテッド | フォトレジスト、エッチ残留物及びbarcを除去するための配合物及び同配合物を含む方法 |
US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
US7879783B2 (en) | 2007-01-11 | 2011-02-01 | Air Products And Chemicals, Inc. | Cleaning composition for semiconductor substrates |
US8357646B2 (en) * | 2008-03-07 | 2013-01-22 | Air Products And Chemicals, Inc. | Stripper for dry film removal |
JP5466836B2 (ja) * | 2008-06-13 | 2014-04-09 | 花王株式会社 | フラックス用洗浄剤組成物 |
JP5170477B2 (ja) * | 2008-09-08 | 2013-03-27 | 三菱瓦斯化学株式会社 | 銅配線表面保護液および半導体回路素子の製造方法 |
CN102197124B (zh) | 2008-10-21 | 2013-12-18 | 高级技术材料公司 | 铜清洁及保护调配物 |
JP2010111795A (ja) * | 2008-11-07 | 2010-05-20 | Chisso Corp | 剥離液 |
CN101750911A (zh) * | 2008-11-28 | 2010-06-23 | 安集微电子(上海)有限公司 | 一种光刻胶清洗剂组合物 |
US20100151206A1 (en) | 2008-12-11 | 2010-06-17 | Air Products And Chemicals, Inc. | Method for Removal of Carbon From An Organosilicate Material |
US8309502B2 (en) * | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
WO2010127941A1 (en) | 2009-05-07 | 2010-11-11 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
SG175273A1 (en) | 2009-05-07 | 2011-11-28 | Basf Se | Resist stripping compositions and methods for manufacturing electrical devices |
JP5836932B2 (ja) | 2009-05-07 | 2015-12-24 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | レジストストリッピング組成物及び電気装置を製造するための方法 |
US8110535B2 (en) | 2009-08-05 | 2012-02-07 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning formulation for metal substrate and methods for using same |
TWI588253B (zh) | 2012-03-16 | 2017-06-21 | 巴地斯顏料化工廠 | 光阻剝除與清潔組合物及其製備方法與用途 |
US8648027B2 (en) | 2012-07-06 | 2014-02-11 | The Clorox Company | Low-VOC cleaning substrates and compositions comprising a cationic biocide |
KR20150036307A (ko) * | 2012-07-19 | 2015-04-07 | 닛산 가가쿠 고교 가부시키 가이샤 | 반도체용 세정액 및 이것을 이용한 세정방법 |
US9536730B2 (en) | 2012-10-23 | 2017-01-03 | Air Products And Chemicals, Inc. | Cleaning formulations |
US9158202B2 (en) | 2012-11-21 | 2015-10-13 | Dynaloy, Llc | Process and composition for removing substances from substrates |
US9102901B2 (en) * | 2012-12-20 | 2015-08-11 | Rohm And Haas Electronic Materials Llc | Methods and compositions for removal of metal hardmasks |
US10189712B2 (en) | 2013-03-15 | 2019-01-29 | International Business Machines Corporation | Oxidation of porous, carbon-containing materials using fuel and oxidizing agent |
KR101420571B1 (ko) * | 2013-07-05 | 2014-07-16 | 주식회사 동진쎄미켐 | 드라이필름 레지스트 박리제 조성물 및 이를 이용한 드라이필름 레지스트의 제거방법 |
JP6233779B2 (ja) * | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
JP2015118125A (ja) * | 2013-11-18 | 2015-06-25 | 富士フイルム株式会社 | 変性レジストの剥離液、これを用いた変性レジストの剥離方法および半導体基板製品の製造方法 |
JP2017026645A (ja) * | 2013-12-03 | 2017-02-02 | Jsr株式会社 | レジスト除去剤およびレジスト除去方法 |
US20150203753A1 (en) * | 2014-01-17 | 2015-07-23 | Nanya Technology Corporation | Liquid etchant composition, and etching process in capacitor process of dram using the same |
US20150219996A1 (en) * | 2014-02-06 | 2015-08-06 | Dynaloy, Llc | Composition for removing substances from substrates |
KR101535386B1 (ko) * | 2014-07-09 | 2015-07-08 | 노재호 | 잉크 또는 도료 식각용 식각용액 및 이를 이용한 잉크 또는 도료 패턴의 제조방법 |
US9096821B1 (en) | 2014-07-31 | 2015-08-04 | The Clorox Company | Preloaded dual purpose cleaning and sanitizing wipe |
CN113214920A (zh) | 2015-03-31 | 2021-08-06 | 弗萨姆材料美国有限责任公司 | 清洁制剂 |
JP6808714B2 (ja) * | 2015-08-03 | 2021-01-06 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 洗浄組成物 |
US10072237B2 (en) | 2015-08-05 | 2018-09-11 | Versum Materials Us, Llc | Photoresist cleaning composition used in photolithography and a method for treating substrate therewith |
CN108701608A (zh) * | 2016-03-01 | 2018-10-23 | 东京应化工业株式会社 | 半导体基板或装置的洗涤液及洗涤方法 |
KR101697336B1 (ko) * | 2016-03-03 | 2017-01-17 | 주식회사 엘지화학 | 액정 배향막의 제조방법 |
TWI796289B (zh) * | 2016-03-09 | 2023-03-21 | 美商恩特葛瑞斯股份有限公司 | 化學機械研磨後清洗組合物及清洗方法 |
JPWO2017195453A1 (ja) * | 2016-05-13 | 2019-04-04 | 株式会社Jcu | レジストの剥離液 |
KR101807206B1 (ko) * | 2016-07-13 | 2017-12-08 | 주식회사 엘지화학 | 액정 배향막용 세정제 조성물 |
TWI649454B (zh) * | 2017-11-10 | 2019-02-01 | 關東鑫林科技股份有限公司 | 蝕刻液組成物及使用該蝕刻液組成物之蝕刻方法 |
US10973386B2 (en) | 2017-09-18 | 2021-04-13 | The Clorox Company | Cleaning wipes system having particular performance characteristics |
US10973385B2 (en) | 2017-09-18 | 2021-04-13 | The Clorox Company | Cleaning wipes having particular pore volume distribution characteristics |
US10975341B2 (en) | 2017-09-18 | 2021-04-13 | The Clorox Company | Cleaning wipes having particular MABDF characteristics |
US10982177B2 (en) | 2017-09-18 | 2021-04-20 | The Clorox Company | Cleaning wipes with particular lotion retention and efficacy characteristics |
US11175587B2 (en) | 2017-09-29 | 2021-11-16 | Versum Materials Us, Llc | Stripper solutions and methods of using stripper solutions |
CN108375879A (zh) * | 2017-10-26 | 2018-08-07 | 信丰正天伟电子科技有限公司 | 一种线路板印制成像后的干膜剥除剂 |
EP3721297B1 (en) * | 2017-12-08 | 2024-02-07 | Henkel AG & Co. KGaA | Photoresist stripper compostion |
WO2019151141A1 (ja) * | 2018-02-05 | 2019-08-08 | 富士フイルム株式会社 | 処理液、及び、処理方法 |
JP7137318B2 (ja) * | 2018-02-22 | 2022-09-14 | オルガノ株式会社 | 被処理液の精製方法 |
US10948826B2 (en) * | 2018-03-07 | 2021-03-16 | Versum Materials Us, Llc | Photoresist stripper |
US11472164B2 (en) | 2018-12-21 | 2022-10-18 | The Clorox Company | Multi-layer substrates comprising sandwich layers and polyethylene |
KR102444014B1 (ko) * | 2019-02-05 | 2022-09-15 | 가부시키가이샤 도쿠야마 | 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법 |
JP2020126997A (ja) * | 2019-02-05 | 2020-08-20 | 株式会社トクヤマ | シリコンエッチング液及び該エッチング液を用いたシリコンデバイスの製造方法 |
EP3959291A4 (en) * | 2019-03-11 | 2023-07-19 | Versum Materials US, LLC | ETCHING SOLUTION AND PROCESS FOR ALUMINUM NITRIDE |
CN110148619B (zh) * | 2019-06-25 | 2023-04-07 | 京东方科技集团股份有限公司 | 一种显示基板的制备方法、显示基板和显示装置 |
TWI778497B (zh) * | 2020-01-29 | 2022-09-21 | 美商艾德凡斯化學公司 | 胺基酸界面活性劑 |
CN113430069A (zh) * | 2020-03-23 | 2021-09-24 | 上海新阳半导体材料股份有限公司 | 一种低羟胺水基清洗液、其制备方法及应用 |
TWI749964B (zh) * | 2020-12-24 | 2021-12-11 | 達興材料股份有限公司 | 鹼性清洗組合物、清洗方法和半導體製造方法 |
CN115011348B (zh) * | 2022-06-30 | 2023-12-29 | 湖北兴福电子材料股份有限公司 | 一种氮化铝蚀刻液及其应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
US20040106532A1 (en) * | 2002-10-10 | 2004-06-03 | Shigeru Yokoi | Cleaning liquid used in photolithography and a method for treating substrate therewith |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US677286A (en) * | 1901-02-18 | 1901-06-25 | Frank Mcm Stanton | Recording device for hoists. |
US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
US5185235A (en) * | 1987-09-09 | 1993-02-09 | Tokyo Ohka Kogyo Co., Ltd. | Remover solution for photoresist |
JPH0770534B2 (ja) * | 1993-01-11 | 1995-07-31 | 日本電気株式会社 | 半導体装置の製造方法 |
DE9304878U1 (de) * | 1993-03-31 | 1993-06-09 | Morton International, Inc., Chicago, Ill. | Entschichterlösung für lichtvernetzte Photoresistschablonen |
JP3406055B2 (ja) * | 1994-03-31 | 2003-05-12 | 東京応化工業株式会社 | ポジ型レジスト用剥離液 |
US5567574A (en) | 1995-01-10 | 1996-10-22 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for photoresist and method of removing |
US5563119A (en) * | 1995-01-26 | 1996-10-08 | Ashland Inc. | Stripping compositions containing alkanolamine compounds |
JP3236220B2 (ja) * | 1995-11-13 | 2001-12-10 | 東京応化工業株式会社 | レジスト用剥離液組成物 |
JP2950407B2 (ja) * | 1996-01-29 | 1999-09-20 | 東京応化工業株式会社 | 電子部品製造用基材の製造方法 |
JPH10289891A (ja) | 1997-04-11 | 1998-10-27 | Mitsubishi Gas Chem Co Inc | 半導体回路用洗浄剤及びそれを用いた半導体回路の製造方法 |
JPH1184687A (ja) * | 1997-09-02 | 1999-03-26 | Nagase Denshi Kagaku Kk | レジスト剥離剤組成物及びその使用方法 |
US6033993A (en) * | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
US6417112B1 (en) * | 1998-07-06 | 2002-07-09 | Ekc Technology, Inc. | Post etch cleaning composition and process for dual damascene system |
JP4044219B2 (ja) | 1998-09-09 | 2008-02-06 | 花王株式会社 | 剥離剤組成物 |
JP2000087089A (ja) * | 1998-09-16 | 2000-03-28 | Lion Corp | 屋外構造物表面洗浄剤組成物 |
US6828289B2 (en) * | 1999-01-27 | 2004-12-07 | Air Products And Chemicals, Inc. | Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature |
US6117364A (en) * | 1999-05-27 | 2000-09-12 | Nalco/Exxon Energy Chemicals, L.P. | Acid corrosion inhibitor |
JP2001100436A (ja) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
TWI243204B (en) * | 2000-02-04 | 2005-11-11 | Sumitomo Chemical Co | Electronic parts cleaning solution |
US6531436B1 (en) * | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
EP1138726B1 (en) * | 2000-03-27 | 2005-01-12 | Shipley Company LLC | Polymer remover |
EP1322432A2 (en) * | 2000-09-19 | 2003-07-02 | Shipley Company LLC | Process for treating adhesion promoted metal surfaces |
KR100822236B1 (ko) * | 2000-11-30 | 2008-04-16 | 토소가부시키가이샤 | 레지스트 박리제 |
US20030022800A1 (en) * | 2001-06-14 | 2003-01-30 | Peters Darryl W. | Aqueous buffered fluoride-containing etch residue removers and cleaners |
JP3403187B2 (ja) * | 2001-08-03 | 2003-05-06 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
TWI297102B (en) * | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
JP4661007B2 (ja) | 2001-08-23 | 2011-03-30 | 昭和電工株式会社 | サイドウォール除去液 |
JP3797541B2 (ja) * | 2001-08-31 | 2006-07-19 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
JP2003122028A (ja) * | 2001-10-17 | 2003-04-25 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
US20030138737A1 (en) * | 2001-12-27 | 2003-07-24 | Kazumasa Wakiya | Photoresist stripping solution and a method of stripping photoresists using the same |
JP2003228179A (ja) * | 2002-01-31 | 2003-08-15 | Mitsubishi Gas Chem Co Inc | 銅配線基板向けアミン含有レジスト剥離液および剥離方法 |
US6773873B2 (en) * | 2002-03-25 | 2004-08-10 | Advanced Technology Materials, Inc. | pH buffered compositions useful for cleaning residue from semiconductor substrates |
JP2004029346A (ja) * | 2002-06-25 | 2004-01-29 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
US6677286B1 (en) | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
JP4443864B2 (ja) * | 2002-07-12 | 2010-03-31 | 株式会社ルネサステクノロジ | レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法 |
US6849200B2 (en) | 2002-07-23 | 2005-02-01 | Advanced Technology Materials, Inc. | Composition and process for wet stripping removal of sacrificial anti-reflective material |
JP2004133384A (ja) * | 2002-08-14 | 2004-04-30 | Sony Corp | レジスト用剥離剤組成物及び半導体装置の製造方法 |
US7833957B2 (en) | 2002-08-22 | 2010-11-16 | Daikin Industries, Ltd. | Removing solution |
US7166419B2 (en) * | 2002-09-26 | 2007-01-23 | Air Products And Chemicals, Inc. | Compositions substrate for removing etching residue and use thereof |
US8236485B2 (en) * | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
TW200505975A (en) | 2003-04-18 | 2005-02-16 | Ekc Technology Inc | Aqueous fluoride compositions for cleaning semiconductor devices |
US20040220066A1 (en) * | 2003-05-01 | 2004-11-04 | Rohm And Haas Electronic Materials, L.L.C. | Stripper |
US20060003910A1 (en) * | 2004-06-15 | 2006-01-05 | Hsu Jiun Y | Composition and method comprising same for removing residue from a substrate |
US8030263B2 (en) * | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
US9217929B2 (en) | 2004-07-22 | 2015-12-22 | Air Products And Chemicals, Inc. | Composition for removing photoresist and/or etching residue from a substrate and use thereof |
KR101238471B1 (ko) | 2005-02-25 | 2013-03-04 | 이케이씨 테크놀로지, 인코포레이티드 | 구리 및 저 k 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법 |
-
2004
- 2004-07-22 US US10/896,589 patent/US9217929B2/en not_active Expired - Fee Related
-
2005
- 2005-07-14 IL IL169681A patent/IL169681A0/en unknown
- 2005-07-18 KR KR1020050064750A patent/KR100786606B1/ko active IP Right Grant
- 2005-07-19 EP EP05015627.2A patent/EP1619557B1/en not_active Not-in-force
- 2005-07-19 SG SG200504839A patent/SG119361A1/en unknown
- 2005-07-19 SG SG200716920-4A patent/SG136954A1/en unknown
- 2005-07-20 TW TW094124607A patent/TWI282043B/zh active
- 2005-07-22 CN CN2005100875451A patent/CN1724626B/zh not_active Expired - Fee Related
- 2005-07-22 CN CN2010101139780A patent/CN101794088B/zh not_active Expired - Fee Related
- 2005-07-22 JP JP2005212358A patent/JP4819429B2/ja not_active Expired - Fee Related
-
2012
- 2012-07-31 US US13/562,993 patent/US20120295828A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440326B1 (en) * | 1998-08-13 | 2002-08-27 | Mitsubishi Gas Chemical Company, Inc. | Photoresist removing composition |
US20040106532A1 (en) * | 2002-10-10 | 2004-06-03 | Shigeru Yokoi | Cleaning liquid used in photolithography and a method for treating substrate therewith |
Also Published As
Publication number | Publication date |
---|---|
KR100786606B1 (ko) | 2007-12-21 |
SG119361A1 (en) | 2006-02-28 |
CN1724626A (zh) | 2006-01-25 |
US20060016785A1 (en) | 2006-01-26 |
KR20060053853A (ko) | 2006-05-22 |
EP1619557B1 (en) | 2015-03-25 |
US9217929B2 (en) | 2015-12-22 |
CN101794088A (zh) | 2010-08-04 |
CN101794088B (zh) | 2013-04-24 |
JP2006096984A (ja) | 2006-04-13 |
TWI282043B (en) | 2007-06-01 |
TW200604762A (en) | 2006-02-01 |
JP4819429B2 (ja) | 2011-11-24 |
EP1619557A1 (en) | 2006-01-25 |
IL169681A0 (en) | 2007-07-04 |
US20120295828A1 (en) | 2012-11-22 |
SG136954A1 (en) | 2007-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1724626B (zh) | 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用 | |
US8030263B2 (en) | Composition for stripping and cleaning and use thereof | |
US6869921B2 (en) | Stripping composition | |
KR100700998B1 (ko) | 기판으로부터 잔사를 제거하기 위한 조성물 및 그의 사용방법 | |
US7674755B2 (en) | Formulation for removal of photoresist, etch residue and BARC | |
EP1688798B1 (en) | Aqueous based residue removers comprising fluoride | |
TWI414908B (zh) | 用於除去後蝕刻光阻劑、蝕刻聚合物及殘留物的含有縮醛或縮酮的剝除劑 | |
CN1949085B (zh) | 用于去除残留物的水性清洗组合物及使用该组合物的方法 | |
KR100942009B1 (ko) | 포토레지스트, 에칭 잔류물 및 barc를 제거하기 위한제제 | |
CN1831654B (zh) | 光致抗蚀剂剥离液组合物以及光致抗蚀剂的剥离方法 | |
CN1776532A (zh) | 从基片上除去残留物的组合物及其方法 | |
CN105068388A (zh) | 用于金属基底的半水性剥离和清洁制剂及其使用方法 | |
US7682458B2 (en) | Aqueous based residue removers comprising fluoride | |
CN1963678B (zh) | 限定图案的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170623 Address after: Arizona, USA Patentee after: Versum Materials US, LLC Address before: American Pennsylvania Patentee before: Air Products and Chemicals, Inc. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101027 Termination date: 20210722 |
|
CF01 | Termination of patent right due to non-payment of annual fee |