TWI414908B - 用於除去後蝕刻光阻劑、蝕刻聚合物及殘留物的含有縮醛或縮酮的剝除劑 - Google Patents
用於除去後蝕刻光阻劑、蝕刻聚合物及殘留物的含有縮醛或縮酮的剝除劑 Download PDFInfo
- Publication number
- TWI414908B TWI414908B TW096139077A TW96139077A TWI414908B TW I414908 B TWI414908 B TW I414908B TW 096139077 A TW096139077 A TW 096139077A TW 96139077 A TW96139077 A TW 96139077A TW I414908 B TWI414908 B TW I414908B
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- Prior art keywords
- formulation
- acetal
- weight
- group
- fluoride
- Prior art date
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- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 title abstract 2
- 229920000642 polymer Polymers 0.000 title description 3
- 239000000203 mixture Substances 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000009472 formulation Methods 0.000 claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 11
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 10
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 239000003112 inhibitor Substances 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 17
- 150000001241 acetals Chemical class 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 12
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical group [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 8
- -1 methyl acetal Chemical class 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- XHTYQFMRBQUCPX-UHFFFAOYSA-N 1,1,3,3-tetramethoxypropane Chemical compound COC(OC)CC(OC)OC XHTYQFMRBQUCPX-UHFFFAOYSA-N 0.000 claims description 5
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 4
- WSMYVTOQOOLQHP-UHFFFAOYSA-N Malondialdehyde Chemical compound O=CCC=O WSMYVTOQOOLQHP-UHFFFAOYSA-N 0.000 claims description 4
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- 229940118019 malondialdehyde Drugs 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims description 4
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- VPZFYLQMPOIPKH-UHFFFAOYSA-N 1,1,1,2-tetramethoxyethane Chemical compound COCC(OC)(OC)OC VPZFYLQMPOIPKH-UHFFFAOYSA-N 0.000 claims description 2
- SSZACLYPEFCREM-UHFFFAOYSA-N 2-benzyl-1,3-dioxolane Chemical compound C=1C=CC=CC=1CC1OCCO1 SSZACLYPEFCREM-UHFFFAOYSA-N 0.000 claims description 2
- OVXJWSYBABKZMD-UHFFFAOYSA-N 2-chloro-1,1-diethoxyethane Chemical compound CCOC(CCl)OCC OVXJWSYBABKZMD-UHFFFAOYSA-N 0.000 claims description 2
- CRZJPEIBPQWDGJ-UHFFFAOYSA-N 2-chloro-1,1-dimethoxyethane Chemical compound COC(CCl)OC CRZJPEIBPQWDGJ-UHFFFAOYSA-N 0.000 claims description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 2
- 229940074391 gallic acid Drugs 0.000 claims description 2
- 235000004515 gallic acid Nutrition 0.000 claims description 2
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 2
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 claims description 2
- DTUQWGWMVIHBKE-UHFFFAOYSA-N phenylacetaldehyde Chemical compound O=CCC1=CC=CC=C1 DTUQWGWMVIHBKE-UHFFFAOYSA-N 0.000 claims 2
- HEVMDQBCAHEHDY-UHFFFAOYSA-N (Dimethoxymethyl)benzene Chemical compound COC(OC)C1=CC=CC=C1 HEVMDQBCAHEHDY-UHFFFAOYSA-N 0.000 claims 1
- ABADUMLIAZCWJD-UHFFFAOYSA-N 1,3-dioxole Chemical compound C1OC=CO1 ABADUMLIAZCWJD-UHFFFAOYSA-N 0.000 claims 1
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical compound OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 claims 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 claims 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 claims 1
- 150000002009 diols Chemical class 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229940100595 phenylacetaldehyde Drugs 0.000 claims 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims 1
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 claims 1
- 239000006184 cosolvent Substances 0.000 abstract description 3
- 150000002222 fluorine compounds Chemical class 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000010410 layer Substances 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 150000004292 cyclic ethers Chemical class 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- WNJSKZBEWNVKGU-UHFFFAOYSA-N 2,2-dimethoxyethylbenzene Chemical compound COC(OC)CC1=CC=CC=C1 WNJSKZBEWNVKGU-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- ROZSPJBPUVWBHW-UHFFFAOYSA-N [Ru]=O Chemical class [Ru]=O ROZSPJBPUVWBHW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzenecarboxaldehyde Natural products O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 239000012154 double-distilled water Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- VNKYTQGIUYNRMY-UHFFFAOYSA-N methoxypropane Chemical compound CCCOC VNKYTQGIUYNRMY-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- QNGNSVIICDLXHT-UHFFFAOYSA-N para-ethylbenzaldehyde Natural products CCC1=CC=C(C=O)C=C1 QNGNSVIICDLXHT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
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Description
本案根據35 U.S.C.§ 119(e)請求2006年10月19日申請的早期申請美國專利申請案序號60/852,758的優先權，在此以引用方式將其全文併入本文。
本發明係有關用於從半導體基材除去後蝕刻有機及無機殘留物及聚合性殘留物的剝除劑。
微電子結構的製造涉及許多步驟。在製造積體電路的製造機構中，有時候需要半導體表面的選擇性蝕刻。歷史上，為了選擇性地除去材料許多廣大不同類型的蝕刻製程已經成功地被使用至不同的程度。再者，在該微電子結構中不同層的選擇性蝕刻被當作該積體電路製程中的關鍵及重要的步驟。
在半導體體及半導體微電路的製造中，經常必須以聚合性有機物質來塗佈基材。一些基材的例子包括鈦、銅、塗佈二氧化矽的矽晶圓，該矽晶圓可進一步包括鈦及銅等的金屬元素。經常地，該聚合性有機物質為光阻材料。這是將在曝光之後仰賴顯影來形成蝕刻遮罩的材料。在後繼的處理步驟中，從該基材表面移除至少一部分光阻劑。
從一基材表面移除光阻劑的一個普通方法為溼式化學法。為了從該基材除去光阻劑所調配的溼式化學組成應該不能使任何金屬電路腐蝕、溶解及/或變鈍、化學地改變無機基材及/或攻擊該基材本身。除去光阻的另一個方法為乾式灰化法，其中任意使用氧或形成例如氫等的氣體而經由電漿蝕刻來除去該光阻劑。殘留物或副產物可為該光阻劑本身或該光阻劑、底下的基材及/或蝕刻氣體的組合。這些殘留物或副產物經常被稱為側壁聚合物、遮蓋物或阻障物。
剝除及/或清潔組成物的目的在於從該半導體裝置的基材表面除去這些殘留物或副產物而不會使該基材的曝光表面在蝕刻步驟結束以後腐蝕、溶解及/或變鈍。
使用縮醛當作膜鑄的摻混物的鑄造溶劑已經被說明過。Wanat等人(US 6,911,293 B2)說明包含膜成形樹脂、光活性化合物或光酸產生劑及選自縮醛及縮酮一覽表的有機溶劑。然而，該Wanat發明卻沒有教導使用縮醛溶劑當作剝除及/或清潔組成物。
Ikemoto及Kojiro(US 2004/0009883 A1)說明含有氟化合物、醯胺溶劑及醚溶劑的混合溶劑及水的阻劑剝除配方。所示的例子為含有二乙二醇單甲基醚、N,N－二甲基乙醯胺(DMAC)、氟化銨及水。本發明的說明所提供的醚溶劑的例子中包括二氧雜環戊烷及三噁烷。
Doyle等人(US 6,689,734 B2)說明添加一些試劑至具有高度氟化化合物的單溴化的烴化合物之清潔配方。那些試劑為下列材料之一或多者：醇類、酯類、醚類、環醚類、酮類、烷類、萜烯類、二鹽基酯類、二醇醚類、吡咯酮或低或非臭氧消耗的氯化及氯化/氟化烴類。1,4－二噁烷及1,3－二氧雜環戊烷在該等試劑的環醚基之列。
本發明所揭示的配方能從半導體基材除去後蝕刻有機及無機殘留物及光阻劑。
有一個形態中，本發明提供一種用於從半導體基材除去後蝕刻有機及無機殘留物及光阻劑的配方，其包含：縮醛或縮酮溶劑、水、多羥醇及調節該配方使其具有至少7或更高的pH之pH調節劑。
另一個形態中，本發明提供一種用於從半導體基材除去後蝕刻有機及無機殘留物及光阻劑的配方，其包含：20至55重量%的二醇醚、10至55重量%的四甲氧基丙烷、1至15重量%的氫氧化四甲基銨、0.5至5重量%的甲苯基三唑、5至25重量%的丙二醇及40至60重量%的水。
又另一個形態中，本發明提供一種從半導體基材除去後蝕刻有機及無機殘留物及光阻劑的方法，其包含：使該基材與包含縮醛或縮酮溶劑、水、多羥醇及調節該配方使其具有至少7或更高的pH之pH調節劑。
本發明提供一組成物，其成分以能從例如，舉例來說，半導體基材等的基材有效地除去殘留物的量存在。在有關半導體基材的應用中，此等殘留物包括，舉例來說，光阻劑(硬化或沒硬化)、間隙填料、底部抗反射塗層(BARC)及其他聚合性材料(例如，含有C－F的聚合物、低及高分子量聚合物)及/或加工殘留物(例如蝕刻及灰化製程所產生的殘留物)、無機化合物(例如金屬氧化物、化學機械研磨(CMP)漿料的陶瓷粒子及其他無機蝕刻殘留物)、含有金屬的化合物(例如，舉例來說有機金屬殘留物及金屬有機化合物)。有一個具體例中，根據本發明的組成物在從半導體基材除去含矽的BARC時特別有效。
該等殘留物經常存在於基材中，該基材可包括金屬、矽、矽酸鹽及/或層間介電材料(例如，舉例來說，沈積的矽氧化物及例如HSQ、MSQ、FOX、TEOS及旋塗玻璃等衍生的矽氧化物)、化學氣相沈積介電材料、低－k材料及/或高k－材料(例如矽酸鉿、氧化鉿、鈦酸鋇鍶(BST)、TiO2
、TaO5
)，其中該等殘留物與該金屬、矽、矽化物、層間介電材料、低－k材料及/或高k－材料將與該清潔組成物接觸。根據本發明的組成物能與此等材料相容而且，因此，可用於選擇性地除去殘留物(例如，舉例來說，上述的那些)，而不會顯著地攻擊該金屬、矽、二氧化矽、層間介電材料、低－k材料及/或高k－材料。在特定的具體例中，該基材可含有金屬，例如，但不限於，銅、鈷、銅合金、鈦、氮化鈦、鉭、氮化鉭及/或鈦/鎢合金。
本發明說明一配方，其包含充當溶劑的縮醛或縮酮、多羥醇、水及調節該配方使其具有至少7或更高的pH之pH調節劑。本發明中的配方可視需要地含有共溶劑形式的水溶性有機溶劑。本發明中的配方可用於從半導體基材除去後蝕刻有機及無機殘留物及聚合性殘留物。
本發明說明具有含下列式I或II的縮醛或縮酮或二者的組合的組成物之配方：
其中n1而且R1
、R2
、R3
、R4
及R5
各自獨立地為氫、烷基或苯基。
更明確地說，本發明說明包含式I或II的縮醛或縮酮或二者的組合、多羥醇、高pH調節劑及鹼水的半水性剝除組成物。該組成物的pH為至少7或更高。
在此配方中，該縮醛或縮酮溶劑的範圍為約0.01重量%至90.00重量%，該多元醇的範圍為約1重量%至80重量%，水的範圍為約1重量%至80重量%，而且該pH調節劑的範圍為約0.1重量%至15重量%。
此等配方較佳的縮醛或縮酮為四甲氧基丙烷、四甲氧基乙烷、丙二醛雙(甲基縮醛)、苯基乙醛二甲基縮醛、苯甲醛二甲基縮醛、苯基乙醛乙二醇縮醛、氯乙醛二甲基縮醛、氯乙醛二乙基縮醛、1,3－二氧雜環戊烷、三噁烷及其混合物。。
此等配方較佳的多羥醇為乙二醇、丙二醇、丙三醇、丁二醇、戊二醇及其混合物。
此等配方較佳的pH調節劑為氫氧化四丁基銨(TBAH)、氫氧化四甲基銨(TMAH)、四甲氧基丙烷(又名丙二醛雙(甲基縮醛))(TMP)、氫氧化鉀(KOH)、氫氧化苯甲基三甲基銨(BzTMAH)及其混合物。該pH調節劑也具有輔助有機及無機殘留物除去的功能。
水的非限定例子包括去離子(DI)水、超純水、蒸餾水、雙重蒸餾水或具有低金屬含量的去離子水。較佳地，該組成物中的水包含DI水。在本發明中，水以不同方式起作用，例如，舉例來說，當作溶解該組成物之一或更多固態成分的溶劑，當作該等成分的載劑，當作該殘留物除去的助劑，當作該組成物的黏度改質劑及當作稀釋劑。
這些組成物中的配方也可以共溶劑形式含有其他有機溶劑。該有機溶劑係選自由四氫呋喃甲醇、二醇醚及其混合物所構成的群組。這些配方侷限於pH為至少7或更高的情形。
本發明的配方可含有銨及氟化四價銨。有使用的話，該銨及氟化四價銨具有輔助有機及無機殘留物除去的功能。較佳的銨及氟化四價銨為氟化四丁基銨、氫氧化四丙基銨、氫氧化四乙基銨、氟化四甲基銨、氫氧化銨及其混合物。這些配方侷限於pH為至少7或更高的情形。
本發明中視需要地使用腐蝕抑制劑。該腐蝕抑制劑的例子為甲苯基三唑、苯并三唑、苯磷二酚、沒食子酸及其混合物。這些配方侷限於pH為至少7或更高的情形。
據證實含有此等縮醛或縮酮的配方能有效除去前－及後－蝕刻光阻劑、蝕刻殘留物及後蝕刻聚合性殘留物。小心確認該組成物的pH為至少7或更高，因為具有小於7的pH的組成物可能引起儲存壽命的問題。
本發明的清潔組成物經常藉著於室溫下在一容器中將該等成分混合在一起直到所有固體都溶在水性為底的介質中為止。
在此所揭示的組成物能與含有低－k膜(例如HSQ(FOx)、MSQ、SiLK等等)的基材相容，該低－k膜包括那些含有氟化物的低－k膜。該等組成物也能有效剝除光阻劑，該光阻劑包括正向及負向光阻劑及電漿蝕刻殘留物，例如有機殘留物、有機金屬殘留物、無機殘留物、金屬氧化物或在低溫下具有非常低銅腐蝕性的光阻劑錯合物及/或含有鈦的基材。再者，該等組成物能與金屬、矽、二氧化矽、層間介電材料、低－k材料及/或高k－材料相容。
在該製程的期間，將光阻劑層塗在該基材上。運用光微影製程，將圖案定義於該光阻劑層上。從而對經圖案化的光阻劑層施行電漿蝕刻，經由彼將該圖案轉移至該基材。在此蝕刻階段中產生蝕刻殘留物。用於木發明的基材有些被灰化有些則沒有被灰化。當該等基材被灰化時，欲清潔的主要殘留物為蝕刻劑殘留物。若該等基材未被灰化，那麼欲清潔或剝除的主要殘留物為蝕刻殘留物及光阻劑。
在此所說明的方法可經由使以膜或殘留物的形式存在之具有金屬、有機或金屬－有機聚合物、無機鹽、氧化物、氫氧化物或錯合物或其組合的基材與前述的組成物接觸。實際的條件，例如溫度、時間等等，取決於欲除去的材料性質及厚度。一般而言，使該基材接觸或浸在含有溫度介於20℃至85℃，或20℃至60℃，或20℃與40℃之間的組成物之容器中。該基材暴露於該組成物的典型時間可介於，舉例來說，0.1至60分鐘，或1至30分鐘，或1至15分鐘。與該組成物接觸之後，可沖洗接著乾燥該基材。乾燥經常在鈍性氣氛作用之下進行。在特定的具體例中，去離子水沖洗劑或含有去離子水與其他添加物的沖洗劑可在該基材與在此所說明的組成物接觸之前、期間及/或之後使用。然而，該組成物可用於此技藝中使用用於除去光阻劑、灰燼或蝕刻殘留物及/或殘留物的清潔流體之任何習知的方法。
熟於此藝之士將明白本發明的組成物可經修飾以達到最適的清潔而不會損及該基材使得該製程中可維持高流通量的清潔。舉例來說，熟於此藝之士將明白，舉例來說，部分或所有成分量的變更可依據被清潔的基材的組成、欲除去的殘留物本質及所用的特定製程參數而完成。
儘管本發明原理上已經結合清潔半導體基材作了說明，但是本發明的清潔組成物可用於清潔任何包括有機及無機殘留物的基材。
下列實施例供用於進一步舉例說明本發明的目的，但是絕非試圖限制本發明。
在下列實施例中，將所有量指定為重量百分比而且加總至多100重量百分比。在此所揭示的組成物係藉著於室溫下在一容器中將該等成分混合在一起直到所有固體都溶解為止。在表1中說明在此所揭示的特定組成物的例子。
下列為表1中所用的縮略字：
用於此等實施例中各個基材都包含三層。第一層(亦即，底層)為包含BLACK DIAMOND IITM
的ILD材料。下一層為含矽的BARC(193奈米)而且頂層為光阻劑(193奈米)。然後對該等基材施行電漿蝕刻。
在具有設在600轉/分鐘下的圓形鐵氟龍攪拌棒的400毫升燒杯中使用305毫升的清潔組成物來進行清潔試驗。必要的話在加熱板上將該等清潔組成物加熱至下文所示的預期溫度。在下列設定條件之下將尺寸將近x的晶圓片段浸在該等組成物中。
10分鐘@ 25℃ 20分鐘@ 25℃ 10分鐘@ 35℃ 20分鐘@ 35℃
然後在DI水迴流浴中沖洗該等片段3分鐘而且後繼地使用濾過的氮來乾燥。然後使用SEM顯微鏡來分析彼等的清潔度。
表II舉例說明根據本發明的組成物在除去BARC殘留物及光阻劑殘留物時的功效。
使用Creative Design Engineering股份有限公司的ResMapTM
273型電阻率儀器來測量該層的電阻率而測量毯覆式銅、鈷及鎢晶圓試片的金屬層厚度。接著將該等試片浸在預期溫度溫度的組成物中達1小時。週期性地從該組成物移走該等試片，以去離子水沖洗並且乾燥再測量該金屬層的厚度。製成以厚度變化當作浸漬時間的函數的圖形而且從曲線的斜率來測定以埃/分鐘為單位的蝕刻速率。
表III舉例說明根據本發明的特定組成物在選擇性地移除殘留物而沒有顯著地蝕刻該金屬基材時的功效。
前述實施例及較佳具體例的說明應該視為舉例說明，而非限制申請專利範圍所定義的發明。由此將輕易地明瞭，可利用上述特徵的許多變化及組合而不會悖離申請專利範圍所說明的發明。此等變化不得視為悖離本發明的精神及範圍，而且試圖將此等變化包括在下列申請專利範圍的範圍內。
Claims (19)
- 一種從半導體基材除去後蝕刻有機及無機殘留物及光阻劑的配方，其包含：縮醛或縮酮溶劑；水；多羥醇；及調節該配方使其具有至少7或更高的pH之pH調節劑。
- 如申請專利範圍第1項之配方，其中該縮醛或縮酮溶劑具有選自式I、式II及其組合所構成的群組的化學式：
- 如申請專利範圍第1項之配方，其中該縮醛或縮酮溶劑係選自四甲氧基丙烷、四甲氧基乙烷、丙二醛雙(甲基縮醛)、苯基乙醛二甲基縮醛、苯甲醛二甲基縮醛、苯基乙醛乙二醇縮醛、氯乙醛二甲基縮醛、氯乙醛二乙基縮醛、1,3-二氧雜環戊烷、三噁烷及其混合物所構成的群組。
- 如申請專利範圍第1項之配方，其中該多羥醇係選自乙 二醇、丙二醇、丙三醇、丁二醇、戊二醇及其混合物所構成的群組。
- 如申請專利範圍第1項之配方，其中該pH調節劑係選自氫氧化四丁基銨(TBAH)、氫氧化四甲基銨(TMAH)、四甲氧基丙烷(又名丙二醛雙(甲基縮醛))(TMP)、氫氧化鉀(KOH)、氫氧化苯甲基三甲基銨(BzTMAH)及其混合物所構成的群組。
- 如申請專利範圍第1項之配方，其中該縮醛或縮酮溶劑的範圍為約0.01重量%至90重量%，該多羥醇的範圍為約1重量%至80重量%，水的範圍為約1重量%至80重量%而且該pH調節劑的範圍為約0.1重量%至50重量%。
- 如申請專利範圍第1項之配方，其進一步包含氟化物。
- 如申請專利範圍第7項之配方，其中該氟化物係選自氟化四丁基銨、氟化四丙基銨、氟化四乙基銨、氟化四甲基銨、氟化銨及其混合物所構成的群組。
- 如申請專利範圍第1項之配方，其進一步包含腐蝕抑制劑。
- 如申請專利範圍第9項之配方，其中該腐蝕抑制劑係選 自甲苯基三唑、苯并三唑、苯磷二酚、沒食子酸及其混合物所構成的群組。
- 如申請專利範圍第1項之配方，其進一步包含有機溶劑。
- 如申請專利範圍第11項之配方，其中該有機溶劑係選自四氫呋喃甲醇、丙烯醚及其混合物所構成的群組。
- 如申請專利範圍第1項之配方，其進一步包含氟化物、腐蝕抑制劑及有機溶劑。
- 一種從半導體基材除去後蝕刻有機及無機殘留物及光阻劑的配方，其包含：20至55重量%的二醇醚；10至55重量%的四甲氧基丙烷；1至15重量%的氫氧化四甲基銨；0.5至5重量%的甲苯基三唑；5至25重量%的丙二醇，及40至60重量%的水；其中該配方具有至少7或更高的pH。
- 一種從半導體基材除去後蝕刻有機及無機殘留物及光阻劑的方法，其包含：使該基材與含有縮醛或縮酮溶劑、鹼、水及多羥醇的配方接觸，此等配方具有至少7或更 高的pH。
- 如申請專利範圍第15項之方法，其中該配方進一步包含氟化物。
- 如申請專利範圍第15項之方法，其中該配方進一步包含腐蝕抑制劑。
- 如申請專利範圍第15項之方法，其中該配方進一步包含有機溶劑。
- 如申請專利範圍第15項之方法，其中該配方進一步包含氟化物、腐蝕抑制劑及有機溶劑。
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| US85275806P | 2006-10-19 | 2006-10-19 | |
| US11/868,469 US20080096785A1 (en) | 2006-10-19 | 2007-10-05 | Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue |
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| TW200819927A TW200819927A (en) | 2008-05-01 |
| TWI414908B true TWI414908B (zh) | 2013-11-11 |
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| TW (1) | TWI414908B (zh) |
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| US7674755B2 (en) * | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
| WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
| US8026201B2 (en) * | 2007-01-03 | 2011-09-27 | Az Electronic Materials Usa Corp. | Stripper for coating layer |
| JP5206177B2 (ja) * | 2008-07-09 | 2013-06-12 | 三菱瓦斯化学株式会社 | レジスト剥離液組成物およびそれを用いた半導体素子の製造方法 |
| KR101664951B1 (ko) * | 2010-01-26 | 2016-10-11 | 도미니온 엔지니어링 인코포레이티드 | 증착물들을 제거하기 위한 방법 및 조성물 |
| JP2013531621A (ja) | 2010-05-10 | 2013-08-08 | サジティス・インコーポレイテッド | 粒子状固体用の分散剤およびスリップ剤としてのアルキルケタールエステル、その製造法、および使用法 |
| KR101169332B1 (ko) * | 2010-05-12 | 2012-07-30 | 주식회사 이엔에프테크놀로지 | 포토레지스트 박리액 조성물 |
| CN103052691B (zh) | 2010-08-12 | 2014-05-28 | 赛格提斯有限公司 | 包含羧基酯缩酮聚结物的胶乳涂层组合物、其制备方法和应用 |
| WO2012021824A2 (en) * | 2010-08-12 | 2012-02-16 | Segetis, Inc. | Carboxy ester ketal removal compositions, methods of manufacture, and uses thereof |
| CN102221791B (zh) * | 2011-04-29 | 2014-09-03 | 西安东旺精细化学有限公司 | 一种光致抗蚀剂的剥离液组合物 |
| EP2557147B1 (en) * | 2011-08-09 | 2015-04-01 | Basf Se | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
| DE102011088885A1 (de) * | 2011-12-16 | 2013-06-20 | Wacker Chemie Ag | Siliconlöser |
| WO2013122172A1 (ja) * | 2012-02-17 | 2013-08-22 | 三菱化学株式会社 | 半導体デバイス用洗浄液及び半導体デバイス用基板の洗浄方法 |
| CN103365121B (zh) * | 2012-03-29 | 2018-10-02 | 东友精细化工有限公司 | 抗蚀剂剥离组合物及利用该抗蚀剂剥离组合物剥离抗蚀剂的方法 |
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| WO2014047428A1 (en) * | 2012-09-21 | 2014-03-27 | Segetis, Inc. | Cleaning, surfactant, and personal care compositions |
| KR101946379B1 (ko) * | 2012-11-20 | 2019-02-11 | 주식회사 동진쎄미켐 | 포토레지스트 박리액 조성물 및 포토레지스트의 박리방법 |
| US9156809B2 (en) | 2012-11-29 | 2015-10-13 | Segetis, Inc. | Carboxy ester ketals, methods of manufacture, and uses thereof |
| US9460934B2 (en) * | 2013-03-15 | 2016-10-04 | Globalfoundries Inc. | Wet strip process for an antireflective coating layer |
| US9580672B2 (en) * | 2014-09-26 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cleaning composition and method for semiconductor device fabrication |
| CN104263546A (zh) * | 2014-10-02 | 2015-01-07 | 济南瑞东实业有限公司 | 一种高效无污染工业水基全清洗剂及其制备方法 |
| JP6556834B2 (ja) * | 2015-04-10 | 2019-08-07 | 富士フイルム株式会社 | レジスト除去液、レジスト除去方法、再生半導体基板の製造方法 |
| TWI686461B (zh) * | 2019-02-01 | 2020-03-01 | 才將科技股份有限公司 | 一種具有高矽／二氧化矽蝕刻的選擇比的矽蝕刻劑及其應用 |
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- 2007-10-18 KR KR1020070105183A patent/KR101009878B1/ko active IP Right Grant
- 2007-10-18 TW TW096139077A patent/TWI414908B/zh not_active IP Right Cessation
- 2007-10-19 AT AT07118852T patent/ATE502100T1/de not_active IP Right Cessation
- 2007-10-19 DE DE602007013161T patent/DE602007013161D1/de active Active
- 2007-10-19 JP JP2007272508A patent/JP4870646B2/ja not_active Expired - Fee Related
- 2007-10-19 EP EP07118852A patent/EP1914296B1/en not_active Not-in-force
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- 2010-11-18 KR KR1020100114928A patent/KR20110004341A/ko not_active Application Discontinuation
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| US6372410B1 (en) * | 1999-09-28 | 2002-04-16 | Mitsubishi Gas Chemical Company, Inc. | Resist stripping composition |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110004341A (ko) | 2011-01-13 |
| KR20080035494A (ko) | 2008-04-23 |
| JP2012033946A (ja) | 2012-02-16 |
| US20080096785A1 (en) | 2008-04-24 |
| KR101009878B1 (ko) | 2011-01-19 |
| EP1914296A3 (en) | 2009-03-04 |
| EP1914296A2 (en) | 2008-04-23 |
| EP1914296B1 (en) | 2011-03-16 |
| DE602007013161D1 (de) | 2011-04-28 |
| JP4870646B2 (ja) | 2012-02-08 |
| ATE502100T1 (de) | 2011-04-15 |
| TW200819927A (en) | 2008-05-01 |
| JP2008103730A (ja) | 2008-05-01 |
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