KR101009878B1 - 에칭 후 포토레지스트, 에칭 중합체 및 잔류물을 제거하기 위한 아세탈 또는 케탈 함유 스트립퍼 - Google Patents
에칭 후 포토레지스트, 에칭 중합체 및 잔류물을 제거하기 위한 아세탈 또는 케탈 함유 스트립퍼 Download PDFInfo
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- KR101009878B1 KR101009878B1 KR1020070105183A KR20070105183A KR101009878B1 KR 101009878 B1 KR101009878 B1 KR 101009878B1 KR 1020070105183 A KR1020070105183 A KR 1020070105183A KR 20070105183 A KR20070105183 A KR 20070105183A KR 101009878 B1 KR101009878 B1 KR 101009878B1
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- KR
- South Korea
- Prior art keywords
- deionized water
- ttl
- thfa
- tmp
- fluoride
- Prior art date
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- 229920002120 photoresistant polymer Polymers 0.000 title claims description 29
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 title abstract description 10
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 title abstract 2
- 229920000642 polymer Polymers 0.000 title description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000000203 mixture Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000009472 formulation Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 20
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 15
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 claims description 8
- XHTYQFMRBQUCPX-UHFFFAOYSA-N 1,1,3,3-tetramethoxypropane Chemical compound COC(OC)CC(OC)OC XHTYQFMRBQUCPX-UHFFFAOYSA-N 0.000 claims description 6
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 3
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims description 2
- POSYVRHKTFDJTR-UHFFFAOYSA-M tetrapropylazanium;fluoride Chemical compound [F-].CCC[N+](CCC)(CCC)CCC POSYVRHKTFDJTR-UHFFFAOYSA-M 0.000 claims description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002904 solvent Substances 0.000 abstract description 15
- 150000005846 sugar alcohols Polymers 0.000 abstract description 8
- 239000003960 organic solvent Substances 0.000 abstract description 5
- 239000003002 pH adjusting agent Substances 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 239000003112 inhibitor Substances 0.000 abstract description 3
- 150000002222 fluorine compounds Chemical class 0.000 abstract description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 94
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 74
- 239000008367 deionised water Substances 0.000 description 68
- 229910021641 deionized water Inorganic materials 0.000 description 68
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 50
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 241000576602 Cadea Species 0.000 description 13
- 150000001241 acetals Chemical class 0.000 description 12
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- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 description 11
- ZMCHBSMFKQYNKA-UHFFFAOYSA-N 2-aminobenzenesulfonic acid Chemical compound NC1=CC=CC=C1S(O)(=O)=O ZMCHBSMFKQYNKA-UHFFFAOYSA-N 0.000 description 9
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
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- 238000004519 manufacturing process Methods 0.000 description 6
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- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- STIAPHVBRDNOAJ-UHFFFAOYSA-N carbamimidoylazanium;carbonate Chemical compound NC(N)=N.NC(N)=N.OC(O)=O STIAPHVBRDNOAJ-UHFFFAOYSA-N 0.000 description 5
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- 239000003989 dielectric material Substances 0.000 description 5
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- 239000010936 titanium Substances 0.000 description 5
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- WSMYVTOQOOLQHP-UHFFFAOYSA-N Malondialdehyde Chemical compound O=CCC=O WSMYVTOQOOLQHP-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002609 medium Substances 0.000 description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- VPZFYLQMPOIPKH-UHFFFAOYSA-N 1,1,1,2-tetramethoxyethane Chemical compound COCC(OC)(OC)OC VPZFYLQMPOIPKH-UHFFFAOYSA-N 0.000 description 2
- SPEUIVXLLWOEMJ-UHFFFAOYSA-N 1,1-dimethoxyethane Chemical compound COC(C)OC SPEUIVXLLWOEMJ-UHFFFAOYSA-N 0.000 description 2
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 2
- WNJSKZBEWNVKGU-UHFFFAOYSA-N 2,2-dimethoxyethylbenzene Chemical compound COC(OC)CC1=CC=CC=C1 WNJSKZBEWNVKGU-UHFFFAOYSA-N 0.000 description 2
- IUVCFHHAEHNCFT-INIZCTEOSA-N 2-[(1s)-1-[4-amino-3-(3-fluoro-4-propan-2-yloxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]ethyl]-6-fluoro-3-(3-fluorophenyl)chromen-4-one Chemical compound C1=C(F)C(OC(C)C)=CC=C1C(C1=C(N)N=CN=C11)=NN1[C@@H](C)C1=C(C=2C=C(F)C=CC=2)C(=O)C2=CC(F)=CC=C2O1 IUVCFHHAEHNCFT-INIZCTEOSA-N 0.000 description 2
- OVXJWSYBABKZMD-UHFFFAOYSA-N 2-chloro-1,1-diethoxyethane Chemical compound CCOC(CCl)OCC OVXJWSYBABKZMD-UHFFFAOYSA-N 0.000 description 2
- CRZJPEIBPQWDGJ-UHFFFAOYSA-N 2-chloro-1,1-dimethoxyethane Chemical compound COC(CCl)OC CRZJPEIBPQWDGJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
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- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 2
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000012964 benzotriazole Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
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- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
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- 229910052721 tungsten Inorganic materials 0.000 description 2
- HEVMDQBCAHEHDY-UHFFFAOYSA-N (Dimethoxymethyl)benzene Chemical compound COC(OC)C1=CC=CC=C1 HEVMDQBCAHEHDY-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 1
- BRABKKMYSDDDCR-UHFFFAOYSA-N 2-(3-ethoxy-4-methoxy-5-methylsulfanylphenyl)ethanamine Chemical compound CCOC1=CC(CCN)=CC(SC)=C1OC BRABKKMYSDDDCR-UHFFFAOYSA-N 0.000 description 1
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 description 1
- SSZACLYPEFCREM-UHFFFAOYSA-N 2-benzyl-1,3-dioxolane Chemical compound C=1C=CC=CC=1CC1OCCO1 SSZACLYPEFCREM-UHFFFAOYSA-N 0.000 description 1
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- 229910000881 Cu alloy Inorganic materials 0.000 description 1
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 229940074391 gallic acid Drugs 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical class [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- 238000007654 immersion Methods 0.000 description 1
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- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
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Abstract
Description
실시예 A | 실시예 B | 실시예 C | |||
TME | 29.0 | 탈이온수 | 10.0 | THFA | 48.0 |
탈이온수 | 33.5 | TMAF (20%) | 0.8 | TME | 9.0 |
TMAF (20%) | 1.5 | 아닐린-2-술폰산 | 0.5 | KOH (45%) | 0.0 |
PG | 12.0 | TMAH (25%) | 0.0 | TMAH (25%) | 6.0 |
BZT | 2.0 | BZT | 1.8 | TTL | 1.5 |
아닐린-2-술폰산 | 2.0 | PG | 0.0 | PG | 6.5 |
TMAH (25%) | 20.0 | 구아니딘 카보네이트 | 0.0 | 벤질 알코올 | 10.0 |
TME | 86.9 | 탈이온수 | 19.0 | ||
실시예 D | 실시예 E | 실시예 F | |||
THFA | 30.0 | 탈이온수 | 30.0 | 탈이온수 | 46.0 |
TMP | 10.0 | TMAF (20%) | 0.8 | TMAF (20%) | 0.8 |
KOH (45%) | 0.0 | 아닐린-2-술폰산 | 0.5 | 아닐린-2-술폰산 | 0.5 |
TBAH (55%) | 30.0 | TMAH (25%) | 20.0 | TMAH (25%) | 30.0 |
TTL | 3.0 | BZT | 1.8 | BZT | 1.8 |
PG | 6.5 | PG | 5.0 | PG | 5.0 |
테트라히드로나프탈렌 | 0.0 | 구아니딘 카보네이트 | 10.0 | 구아니딘 카보네이트 | 10.0 |
탈이온수 | 20.5 | TME | 31.9 | TME | 5.9 |
실시예 G | 실시예 H | 실시예 I | |||
TME | 20.0 | TME | 20.0 | THFA | 30.0 |
TMAF (20%) | 0.8 | TMAF (20%) | 0.8 | TMP | 10.0 |
아닐린-2-술폰산 | 0.5 | 아닐린-2-술폰산 | 0.5 | KOH (45%) | 0.0 |
TMAH (25%) | 25.0 | TMAH (25%) | 25.0 | TBAH (55%) | 30.0 |
BZT | 1.8 | BZT | 1.8 | TTL | 3.0 |
PG | 5.0 | PG | 5.0 | PG | 6.5 |
구아니딘카보네이트 | 8.0 | 구아니딘 카보네이트 | 12.0 | 탈이온수 | 20.5 |
탈이온수 | 38.9 | 탈이온수 | 34.9 | ||
실시예 J | 실시예 K | 실시예 L | |||
THFA | 30.0 | THFA | 40.0 | THFA | 50.0 |
TMP | 10.0 | TMP | 10.0 | TMP | 15.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TBAH (55%) | 20.0 | TBAH (55%) | 20.0 | TBAH (55%) | 15.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 3.0 |
PG | 6.5 | PG | 6.5 | PG | 6.5 |
탈이온수 | 30.5 | 탈이온수 | 20.5 | 탈이온수 | 10.5 |
실시예 M | 실시예 N | 실시예 O | |||
THFA | 30.0 | THFA | 30.0 | THFA | 40.0 |
TMP | 10.0 | TMP | 10.0 | TMP | 10.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TBAH (55%) | 35.0 | TBAH (55%) | 40.0 | TBAH (55%) | 40.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 3.0 |
PG | 6.5 | PG | 6.5 | PG | 7.0 |
탈이온수 | 15.5 | 탈이온수 | 10.5 | 탈이온수 | 0.0 |
실시예 P | 실시예 Q | 실시예 R | |||
THFA | 40.0 | THFA | 20.0 | THFA | 30.0 |
TMP | 15.0 | TMP | 10.0 | TMP | 10.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TBAH (55%) | 35.0 | TBAH (55%) | 20.0 | TBAH (55%) | 20.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 3.0 |
PG | 7.0 | PG | 6.5 | PG | 6.5 |
탈이온수 | 0.0 | 탈이온수 | 40.5 | 탈이온수 | 30.5 |
실시예 S | 실시예 T | 실시예 U | |||
THFA | 20.0 | THFA | 30.0 | THFA | 30.0 |
TMP | 10.0 | TMP | 10.0 | TMP | 10.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TBAH (55%) | 30.0 | TBAH (55%) | 30.0 | BzTMAH (20%) | 20.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 3.0 |
PG | 6.5 | PG | 6.5 | PG | 6.5 |
탈이온수 | 30.5 | 탈이온수 | 20.5 | 탈이온수 | 30.5 |
실시예 V | 실시예 W | 실시예 X | |||
THFA | 30.0 | THFA | 50.0 | THFA | 50.0 |
TMP | 10.0 | TMP | 10.0 | TMP | 10.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
BzTMAH (20%) | 30.0 | TMAH (25%) | 20.0 | TBAH (55%) | 20.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 3.0 |
PG | 6.5 | PG | 6.5 | PG | 6.5 |
탈이온수 | 20.5 | 탈이온수 | 10.5 | 탈이온수 | 10.5 |
실시예 Y | 실시예 Z | 실시예 A1 | |||
THFA | 30.0 | THFA | 30.0 | THFA | 50.0 |
TMP | 20.0 | TMP | 15.0 | TMP | 10.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TBAH (55%) | 30.0 | TBAH (55%) | 30.0 | BzTMAH (40%) | 20.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 3.0 |
PG | 6.5 | PG | 6.5 | PG | 6.5 |
탈이온수 | 10.5 | 탈이온수 | 15.5 | 탈이온수 | 10.5 |
실시예 A2 | 실시예 A3 | 실시예 A4 | |||
THFA | 40.0 | THFA | 42.0 | THFA | 39.0 |
TMP | 10.0 | BzDMA | 17.0 | BzDMA | 13.0 |
KOH (45%) | 0.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TMAH (25%) | 20.0 | TBAH (55%) | 25.0 | TBAH (55%) | 26.0 |
TTL | 3.0 | TTL | 2.5 | TTL | 2.6 |
PG | 6.5 | PG | 5.4 | PG | 5.7 |
탈이온수 | 20.5 | 탈이온수 | 8.1 | 탈이온수 | 13.7 |
실시예 A5 | 실시예 A6 | 실시예 A7 | |||
THFA | 30.0 | THFA | 42.0 | THFA | 38.0 |
TMP | 20.0 | TME | 12.0 | PADMA | 18.0 |
TBAF (75%) | 2.0 | KOH (45%) | 0.0 | KOH (45%) | 0.0 |
TBAH (55%) | 28.0 | TMAH (25%) | 15.0 | TBAH (55%) | 27.0 |
TTL | 3.0 | TTL | 5.0 | TTL | 2.6 |
PG | 6.5 | PG | 9.0 | PG | 5.8 |
탈이온수 | 10.5 | 1-클로로나프탈렌 | 4.0 | 탈이온수 | 8.6 |
탈이온수 | 13.0 | ||||
실시예 A8 | 실시예 A9 | 실시예 A10 | |||
THFA | 36.0 | THFA | 30.0 | THFA | 30.0 |
PADMA | 14.0 | TMP | 14.0 | TMP | 10.0 |
KOH (45%) | 0.0 | CADMA | 6.0 | CADMA | 10.0 |
TBAH (55%) | 28.0 | TBAH (55%) | 28.0 | TBAH (55%) | 28.0 |
TTL | 2.8 | TTL | 2.8 | TTL | 2.8 |
PG | 6.0 | PG | 6.0 | PG | 6.0 |
탈이온수 | 13.2 | 탈이온수 | 13.2 | 탈이온수 | 13.2 |
실시예 A11 | 실시예 A12 | 실시예 A13 | |||
THFA | 30.0 | THFA | 30.0 | THFA | 30.0 |
TMP | 14.0 | TMP | 14.0 | TMP | 14.0 |
CADEA | 2.0 | CADEA | 2.0 | CADEA | 6.0 |
TBAH (55%) | 14.0 | TBAH (55%) | 20.0 | TBAH (55%) | 28.0 |
TTL | 2.8 | TTL | 2.8 | TTL | 2.8 |
PG | 6.0 | PG | 6.0 | PG | 6.0 |
TMAH (25%) | 14.0 | BzTMAH | 2.0 | ||
탈이온수 | 17.2 | 탈이온수 | 23.2 | 탈이온수 | 13.2 |
실시예 A14 | 실시예 A15 | 실시예 A16 | |||
THFA | 58.0 | THFA | 30.0 | THFA | 30.0 |
TME | 9.0 | TMP | 14.0 | TMP | 14.0 |
KOH (45%) | 0.0 | CADMA | 6.0 | CADMA | 6.0 |
TMAH (25%) | 15.0 | TBAH (55%) | 14.0 | TBAH (55%) | 20.0 |
TTL | 1.5 | TTL | 2.8 | TTL | 2.8 |
PG | 6.5 | PG | 6.0 | PG | 6.0 |
테트라히드로나프탈렌 | 4.0 | TMAH | 14.0 | BzTMAH | 2.0 |
탈이온수 | 6.0 | 탈이온수 | 13.2 | 탈이온수 | 19.2 |
실시예 A17 | 실시예 A18 | 실시예 A19 | |||
THFA | 34.0 | THFA | 35.5 | THFA | 30.0 |
TMP | 19.0 | TMP | 18.0 | TMP | 14.0 |
TMAF (20%) | 0.0 | TMAF (20%) | 1.0 | CADMA | 6.0 |
TMAH (25%) | 27.0 | TMAH (25%) | 26.0 | TBAH (55%) | 5.0 |
TTL | 3.0 | TTL | 3.0 | TTL | 2.8 |
PG | 6.5 | PG | 6.0 | PG | 6.0 |
테트라히드로나프탈렌 | 0.0 | 테트라히드로나프탈렌 | 0.0 | TMAH | 20.0 |
탈이온수 | 10.5 | 탈이온수 | 10.5 | 탈이온수 | 16.2 |
실시예 A20 | 실시예 A21 | 실시예 A22 | |||
THFA | 30.0 | THFA | 34.0 | THFA | 36.0 |
TMP | 14.0 | TMP | 19.0 | TMP | 18.0 |
CADMA | 6.0 | TMAF (20%) | 2.0 | TMAF (20%) | 4.0 |
TBAH (55%) | 15.0 | TMAH (25%) | 26.0 | TMAH (25%) | 26.0 |
TTL | 2.8 | TTL | 3.0 | TTL | 3.0 |
PG | 6.0 | PG | 6.0 | PG | 6.0 |
BzTMAH | 2.0 | 테트라히드로나프탈렌 | 0.0 | 테트라히드로나프탈렌 | 0.0 |
탈이온수 | 24.2 | 탈이온수 | 10.0 | 탈이온수 | 7.0 |
실시예 A23 | 실시예 A24 | 실시예 A25 | |||
THFA | 30.0 | THFA | 40.0 | THFA | 30.0 |
TMP | 14.0 | TMP | 14.0 | TMP | 14.0 |
CADEA | 2.0 | CADEA | 2.0 | CADEA | 2.0 |
TBAH (55%) | 20.0 | TMAH (25%) | 10.0 | TMAH (25%) | 20.0 |
TTL | 2.8 | TTL | 2.8 | TTL | 2.8 |
PG | 6.0 | PG | 6.0 | PG | 6.0 |
BzTMAH | 2.0 | BzTMAH | 2.0 | BzTMAH | 2.0 |
탈이온수 | 23.2 | 탈이온수 | 23.2 | 탈이온수 | 23.2 |
실시예 A26 | 실시예 A27 | 실시예 A28 | |||
DPM | 30.0 | TPM | 30.0 | PGME | 40.0 |
TMP | 14.0 | TMP | 14.0 | TMP | 14.0 |
CADEA | 2.0 | CADEA | 2.0 | CADEA | 2.0 |
TMAH (25%) | 20.0 | TBAH (55%) | 20.0 | TMAH (25%) | 10.0 |
TTL | 2.8 | TTL | 2.8 | TTL | 2.8 |
PG | 6.0 | PG | 6.0 | PG | 6.0 |
BzTMAH | 2.0 | BzTMAH | 2.0 | BzTMAH | 2.0 |
탈이온수 | 23.2 | 탈이온수 | 23.2 | 탈이온수 | 23.2 |
실시예 A29 | 실시예 A30 | 실시예 A31 | |||
Sulfolane | 30.0 | THFA | 30.0 | DPM | 30.0 |
TMP | 14.0 | 1,3-디옥솔란 | 14.0 | 1,3-디옥솔란 | 16.0 |
CADEA | 2.0 | CADEA | 2.0 | CADEA | 0 |
TMAH (25%) | 20.0 | TMAH (25%) | 20.0 | TMAH (25%) | 20.0 |
TTL | 2.8 | TTL | 2.8 | TTL | 2.8 |
PG | 6.0 | PG | 6.0 | PG | 6.0 |
BzTMAH | 2.0 | BzTMAH | 2.0 | BzTMAH | 2.0 |
탈이온수 | 23.2 | 탈이온수 | 23.2 | 탈이온수 | 23.2 |
실시예 A32 | 실시예 A33 | 실시예 A34 | |||
THFA | 39.0 | TME | 30 | PGME | 30 |
PADMA | 13.0 | 탈이온수 | 36 | 탈이온수 | 36 |
KOH (45%) | 0.0 | PG | 10 | PG | 10 |
TBAH (55%) | 26.0 | BZT | 2 | BZT | 2 |
TTL | 2.6 | 아닐린-2-술폰산 | 2 | 아닐린-2-술폰산 | 2 |
PG | 5.7 | TMAH (25%) | 20 | TMAH (25%) | 20 |
탈이온수 | 13.7 | ||||
실시예 A35 |
|
||||
TME | 15 | ||||
탈이온수 | 36 | ||||
PGME | 15 | ||||
PG | 10 | ||||
BZT | 2 | ||||
아닐린-2-술폰산 | 2 | ||||
TMAH (25%) | 20 |
배합물 | BARC | 포토레지스트 | ||
248 nm | 193 nm | 248 nm | 193 nm | |
실시예 A | v | v- | v | X |
실시예 B | v- | X | v | X |
실시예 C | v- | X | v | X |
실시예 D | v | X | v | v- |
실시예 E | v | v | v | v- |
실시예 F | v | v- | v | v- |
실시예 G | v | v- | v | v- |
실시예 H | v | v- | v | v- |
실시예 I | v | X | v | v |
실시예 J | v | v- | v | v |
실시예 K | v | v- | v | v |
실시예 L | v | v | v | v |
실시예 M | v | v- | v | v |
실시예 N | v | v- | v | v |
실시예 O | v- | v- | v | v- |
실시예 P | v | X | v | v- |
실시예 Q | v | v- | v | v |
실시예 R | v | X | v | v |
실시예 S | v | v- | v | v- |
실시예 T | v | v | v | v |
실시예 U | v | v | v | v- |
실시예 V | v | v- | v | v |
실시예 W | v | v | v | v |
실시예 X | v | v | v | v |
실시예 Y | v | v | v | v |
실시예 Z | v | X | v | X |
실시예 A1 | v | v | v | v |
실시예 A2 | v | v | v | v |
실시예 A3 | v | v | v | v |
실시예 A4 | v | v | v | v |
실시예 A5 | v | v- | v | v |
실시예 A6 | v | v- | v | v- |
실시예 A7 | v | v- | v | v- |
실시예 A8 | v | X | v | v- |
실시예 A9 | v | v- | v | v |
실시예 A10 | v | v- | v | v |
실시예 A11 | v | v- | v | v- |
실시예 A12 | v | v- | v | v |
실시예 A13 | v | v- | v | v- |
실시예 A14 | v | v- | v | v |
실시예 A15 | v | v- | v | v- |
실시예 A16 | v | v | v | v |
실시예 A17 | v | v- | v | v- |
실시예 A18 | v | v- | v | v |
실시예 A19 | v | v | v | v- |
실시예 A20 | v | v- | v- | v- |
실시예 A21 | v | v | v- | v |
실시예 A22 | v | v | v | v |
실시예 A23 | v | v | v | v |
실시예 A24 | v | v | v | v- |
실시예 A25 | v | v- | v- | v- |
실시예 A26 | v | v- | NT | v- |
실시예 A27 | NT | v | NT | v |
실시예 A28 | NT | v | NT | v- |
실시예 A29 | NT | v | NT | v |
실시예 A30 | NT | v | NT | v |
실시예 A31 | NT | v | NT | v |
실시예 A32 | NT | v | NT | v |
실시예 A33 | NT | v | NT | v |
실시예 A34 | NT | X | NT | v- |
실시예 A35 | NT | v- | NT | v- |
배합물 | BARC | Cu | Co | W |
193 nm (Å/분) | (Å /분 ) | (Å /분 ) | (Å /분 ) | |
실시예 J | 379 | 23 | 51 | NT |
실시예 P | 2 | 4 | NT | 0 |
실시예 Y | 187 | 10 | NT | NT |
실시예 A2 | 381 | <1 | <2 | ~1 |
실시예 A26 | 18 | 4 | NT | NT |
실시예 A31 | 13 | 9 | NT | NT |
Claims (19)
- 반도체 기판으로부터 에칭 후(post-etched) 유기 및 무기 잔류물, 및 포토레지스트를 제거하기 위한 배합물로서,20 내지 55 중량%의 글리콜 에테르;10 내지 55 중량%의 테트라메톡시프로판;1 내지 15 중량%의 테트라메틸암모늄 수산화물;0.5 내지 5 중량%의 톨릴트리아졸;5 내지 25 중량%의 프로필렌 글리콜, 및40 내지 60 중량%의 물을 포함하며;pH가 7 이상인 배합물.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 제 1항에 있어서, 불화물을 더 포함하는 배합물.
- 제 7항에 있어서, 불화물이 테트라부틸암모늄 불화물, 테트라프로필암모늄 불화물, 테트라에틸암모늄 불화물, 테트라메틸암모늄 불화물, 암모늄 불화물, 및 이들의 혼합물로 이루어진 군에서 선택되는 배합물.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
- 반도체 기판으로부터 에칭 후 유기 및 무기 잔류물, 및 포토레지스트를 제거하기 위한 방법으로서, 20 내지 55 중량%의 글리콜 에테르, 10 내지 55 중량%의 테트라메톡시프로판, 1 내지 15 중량%의 테트라메틸암모늄 수산화물, 0.5 내지 5 중량%의 톨릴트리아졸, 5 내지 25 중량%의 프로필렌 글리콜, 및 40 내지 60 중량%의 물을 포함하며 pH가 7 이상인 배합물과 기판을 접촉시키는 단계를 포함하는 방법.
- 제 15항에 있어서, 배합물이 불화물을 더 포함하는 방법.
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US85275806P | 2006-10-19 | 2006-10-19 | |
US60/852,758 | 2006-10-19 | ||
US11/868,469 | 2007-10-05 | ||
US11/868,469 US20080096785A1 (en) | 2006-10-19 | 2007-10-05 | Stripper Containing an Acetal or Ketal for Removing Post-Etched Photo-Resist, Etch Polymer and Residue |
Related Child Applications (1)
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KR1020100114928A Division KR20110004341A (ko) | 2006-10-19 | 2010-11-18 | 에칭 후 포토레지스트, 에칭 중합체 및 잔류물을 제거하기 위한 아세탈 또는 케탈 함유 스트립퍼 |
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KR20080035494A KR20080035494A (ko) | 2008-04-23 |
KR101009878B1 true KR101009878B1 (ko) | 2011-01-19 |
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KR1020070105183A KR101009878B1 (ko) | 2006-10-19 | 2007-10-18 | 에칭 후 포토레지스트, 에칭 중합체 및 잔류물을 제거하기 위한 아세탈 또는 케탈 함유 스트립퍼 |
KR1020100114928A KR20110004341A (ko) | 2006-10-19 | 2010-11-18 | 에칭 후 포토레지스트, 에칭 중합체 및 잔류물을 제거하기 위한 아세탈 또는 케탈 함유 스트립퍼 |
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EP (1) | EP1914296B1 (ko) |
JP (2) | JP4870646B2 (ko) |
KR (2) | KR101009878B1 (ko) |
AT (1) | ATE502100T1 (ko) |
DE (1) | DE602007013161D1 (ko) |
TW (1) | TWI414908B (ko) |
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ATE502100T1 (de) | 2011-04-15 |
DE602007013161D1 (de) | 2011-04-28 |
EP1914296A3 (en) | 2009-03-04 |
TW200819927A (en) | 2008-05-01 |
KR20110004341A (ko) | 2011-01-13 |
EP1914296A2 (en) | 2008-04-23 |
TWI414908B (zh) | 2013-11-11 |
JP4870646B2 (ja) | 2012-02-08 |
US20080096785A1 (en) | 2008-04-24 |
KR20080035494A (ko) | 2008-04-23 |
JP2008103730A (ja) | 2008-05-01 |
JP2012033946A (ja) | 2012-02-16 |
EP1914296B1 (en) | 2011-03-16 |
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