JP2007128038A - ストリッパー - Google Patents
ストリッパー Download PDFInfo
- Publication number
- JP2007128038A JP2007128038A JP2006204579A JP2006204579A JP2007128038A JP 2007128038 A JP2007128038 A JP 2007128038A JP 2006204579 A JP2006204579 A JP 2006204579A JP 2006204579 A JP2006204579 A JP 2006204579A JP 2007128038 A JP2007128038 A JP 2007128038A
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- JP
- Japan
- Prior art keywords
- acid
- composition
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- present
- fluoride
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
【解決手段】電子デバイスのような基体からポリマー物質を除去するために有用な組成物及び方法が提供される。フッ化物源、多価アルコール及びエーテル、水、並びに、炭酸を含むポリカルボン酸と有機アミンからなるPH調節剤、を含む組成物。この組成物は、プラズマエッチ工程に続いて電子デバイスからポリマー残留物を除去するために特に好適である。
【選択図】なし
Description
下記の表中の組成物を、下記の表中に記載した量で成分を組み合わせることによって調製した。全ての量は重量%であった。
種々の物質、例えば、銅(「Cu」)、0.5%の銅で合金化したアルミニウム(「AlCu」)、チタン(「Ti」)、タングステン(「W」)、タンタル(「Ta」)、窒化ケイ素(SiN)、窒化チタン(TiN)、窒化タンタル(TaN)、酸化ケイ素(「TEOS」)、酸化タンタル(Ta2O5)及び酸化アルミニウム(Al2O3)のブランケットフィルムで被覆したシリコンウェーハ(200mm)を、2cm×2cmの複数の断片に切断した。この個々のフィルムの初期厚さを、適切な測定技術によって決定した。金属フィルム厚さは、Four Dimensions Model 280自動4点プローブメーターを使用することによって決定し、並びに窒化物及び酸化物フィルム厚さは、Nanometrics Nanospec/AFTモデル5000シリーズ計器を使用して決定した。
下記の表に記載した成分及び量を使用する以外は、実施例1を繰り返す。これらの試料は、実施例1におけるものと同様の性能を発揮すると期待される。
下記の表に記載した成分及び量を使用する以外は、実施例1を繰り返す。これらの試料は、実施例1におけるものと同様の性能を発揮すると期待される。
Claims (10)
- (a)0.05〜5重量%のフッ化物源;(b)40〜95重量%の、多価アルコール及びエーテルを含む溶媒混合物;(c)5〜50重量%の水;並びに(d)(1)炭酸又はその塩及び(2)ポリカルボン酸と塩基(但し、ポリカルボン酸と塩基のモル比は、1:1〜1:10である)から選択されるpH調節剤;を含む、基体からポリマー物質を除去するための組成物であって、4〜8のpHを有する組成物。
- フッ化物源が、フッ化アンモニウム、アンモニウムビフルオリド、テトラアルキルアンモニウムフルオリド、アンモニウム−テトラアルキルアンモニウムビフルオリド及びこれらの混合物から選択される、請求項1記載の組成物。
- ポリカルボン酸が3つのカルボン酸基を有する、請求項1記載の組成物。
- ポリカルボン酸が、クエン酸、イソクエン酸、酒石酸、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、マレイン酸、フマル酸、フタル酸、4−(2−ヒドロキシエチル)ピペラジン−1−エタンスルホン酸、L−グルタミン酸、シス−アコニット酸、アガリン酸、トランス−アコニット酸、トリメリト酸及びトリメシン酸から選択される、請求項1記載の組成物。
- 塩基が、アルキルジアミン、イミン、環状アミン及びアルカノールアミンから選択される、請求項1記載の組成物。
- 環状アミンが、モルホリン、イミダゾール、モルホリン、ピペラジン、1,2−ジメチルイミダゾール、1−メチルイミダゾール、L−ヒスチジン、4−(N−モルホリノ)ブタンスルホン酸、4−(N−モルホリノ)プロパンスルホン酸、3−モルホリノ−2−ヒドロキシプロパンスルホン酸及び1,8−ジアザビシクロ[5.4.0]ウンデカ−7−エンから選択される、請求項5記載の組成物。
- pHが6〜8である、請求項1記載の組成物。
- 腐食防止剤、界面活性剤、共溶媒、キレート化剤、還元剤及びこれらの混合物から選択される添加剤を更に含む、請求項1記載の組成物。
- 基体からポリマー残留物を除去する方法であって、ポリマー残留物を含有する基体を、請求項1記載の組成物と、ポリマー残留物を除去するために十分な時間の間接触させる工程を含む方法。
- (a)フッ化物源;(b)多価アルコール及びエーテルを含む溶媒混合物;(c)水;並びに(d)(1)炭酸又はその塩、及び(2)ポリカルボン酸と塩基(但し、ポリカルボン酸と塩基のモル比は、1:1〜1:10である)から選択されるpH調節剤;を含む、基体からポリマー残留物を除去するための組成物であって、4〜8のpHを有する組成物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70340905P | 2005-07-28 | 2005-07-28 | |
US60/703409 | 2005-07-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007128038A true JP2007128038A (ja) | 2007-05-24 |
JP5015508B2 JP5015508B2 (ja) | 2012-08-29 |
Family
ID=37499892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006204579A Active JP5015508B2 (ja) | 2005-07-28 | 2006-07-27 | ストリッパー |
Country Status (6)
Country | Link |
---|---|
US (1) | US7723280B2 (ja) |
EP (1) | EP1755003B1 (ja) |
JP (1) | JP5015508B2 (ja) |
KR (1) | KR101295193B1 (ja) |
CN (1) | CN1916772B (ja) |
TW (1) | TWI339780B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012195590A (ja) * | 2011-03-16 | 2012-10-11 | Air Products & Chemicals Inc | クリーニング調合物およびそのクリーニング調合物の使用方法 |
US8940622B2 (en) | 2011-02-18 | 2015-01-27 | Fujitsu Limited | Method for manufacturing compound semiconductor device and detergent |
JP2021501818A (ja) * | 2017-11-07 | 2021-01-21 | ヘンケル・アクチェンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフト・アウフ・アクチェンHenkel AG & Co. KGaA | フッ化物に基づく洗浄組成物 |
WO2021061922A1 (en) * | 2019-09-27 | 2021-04-01 | Versum Materials Us, Llc | Compositions for removing etch residues, methods of using and use thereof |
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MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
SG158920A1 (en) * | 2005-01-27 | 2010-02-26 | Advanced Tech Materials | Compositions for processing of semiconductor substrates |
KR101238471B1 (ko) * | 2005-02-25 | 2013-03-04 | 이케이씨 테크놀로지, 인코포레이티드 | 구리 및 저 k 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법 |
TW200722505A (en) * | 2005-09-30 | 2007-06-16 | Rohm & Haas Elect Mat | Stripper |
US9329486B2 (en) | 2005-10-28 | 2016-05-03 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US7632796B2 (en) * | 2005-10-28 | 2009-12-15 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US8263539B2 (en) | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
TW200734448A (en) * | 2006-02-03 | 2007-09-16 | Advanced Tech Materials | Low pH post-CMP residue removal composition and method of use |
US20070191243A1 (en) * | 2006-02-13 | 2007-08-16 | General Chemical Performance Products, Llc | Removal of silica based etch residue using aqueous chemistry |
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Also Published As
Publication number | Publication date |
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US7723280B2 (en) | 2010-05-25 |
TW200710610A (en) | 2007-03-16 |
KR101295193B1 (ko) | 2013-08-12 |
CN1916772A (zh) | 2007-02-21 |
CN1916772B (zh) | 2010-08-11 |
EP1755003A1 (en) | 2007-02-21 |
KR20070015051A (ko) | 2007-02-01 |
EP1755003B1 (en) | 2012-04-18 |
TWI339780B (en) | 2011-04-01 |
JP5015508B2 (ja) | 2012-08-29 |
US20070066502A1 (en) | 2007-03-22 |
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