JP2006041376A - 回路装置の製造方法 - Google Patents
回路装置の製造方法 Download PDFInfo
- Publication number
- JP2006041376A JP2006041376A JP2004222115A JP2004222115A JP2006041376A JP 2006041376 A JP2006041376 A JP 2006041376A JP 2004222115 A JP2004222115 A JP 2004222115A JP 2004222115 A JP2004222115 A JP 2004222115A JP 2006041376 A JP2006041376 A JP 2006041376A
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- Prior art keywords
- hole
- circuit device
- wiring layer
- film
- conductive
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Abstract
【解決手段】支持基板11の上面に回路装置を構成する樹脂封止体31を形成した後、樹脂封止体31を支持基板11から分離するため、基板を持たない回路装置の製造が可能となり、回路装置の薄型化、小型化、軽量化および放熱性の向上を実現することが可能となる。また、支持基板11上で封止樹脂28による封止ができるため、封止樹脂28と導電パターン20A、20Bおよび、封止樹脂28と回路素子25A、25Bとの熱膨張係数の差による反りを防止することができる。従って、導電パターン20A、20Bの剥離や導電パターン20Aと金属細線27との接続不良を抑止できるので、信頼性の高い回路装置10Aを製造することが可能となる。
【選択図】図2
Description
図1および図2を参照して、第1の実施形態の回路装置の製造方法を説明する。
先ず、図1(A)を参照して、支持基板11上に接着剤12を介して導電箔13を貼着する。導電箔13は、ロウ材の付着性、ボンディング性、メッキ性が考慮されて、その材料が選択される。具体的な材料としては、Cuを主原料とした導電箔、Alを主原料とした導電箔または、Fe−Ni等の合金から成る導電箔などが採用される。また、他の導電材料でも可能であり、特にエッチングできる導電材が好ましい。導電箔13の厚さは、10μm〜300μm程度である。しかし、10μm以下または300μm以上の導電箔を採用することも可能である。
図3から図5を参照して、第2の実施形態の回路装置の製造方法を説明する。本形態の回路装置の製造方法は、第1の実施形態と基本工程は同じである。従って、ここでは相違点を中心に説明する。
11 支持基板
12 接着剤
13 導電箔
14 レジスト
18 凸部
20A 第1の導電パターン
20B 第2の導電パターン
25A 第1の回路素子
25B 第2の回路素子
27 金属細線
28 封止樹脂
29 ソルダーレジスト
30 外部電極
31 樹脂封止体
33 第1の導電膜
34 第2の導電膜
40 第1の配線層
40A 第1の導電パターン
40B 第2の導電パターン
41 絶縁層
42 貫通孔
43 接続部
45 第2の配線層
46 第1のメッキ膜
47 第2のメッキ膜
48 メッキ膜
50 ひさし
Claims (8)
- 支持基板の表面に第1の導電パターンと前記第1の導電パターンよりも厚く形成される第2の導電パターンとから成る配線層を形成する工程と、
前記配線層と回路素子とを電気的に接続する工程と、
前記回路素子が被覆されるように前記支持基板の上面を封止樹脂で封止する工程と、
前記配線層および前記封止樹脂の裏面を前記支持基板から分離する工程とを具備することを特徴とする回路装置の製造方法。 - 支持基板の表面に厚み方向に突出する凸部を有する第1の配線層を形成する工程と、
絶縁層を介して前記第1の配線層に導電膜を積層させる工程と、
前記凸部と前記導電膜とを導通させる接続部を形成する工程と、
前記導電膜をパターニングすることにより、第2の配線層を形成する工程と
前記第2の配線層と回路素子を電気的に接続する工程と、
前記回路素子が被覆されるように前記支持基板の上面を封止樹脂で封止する工程と、
前記第1の配線層、絶縁層および前記封止樹脂の裏面を前記支持基板から分離する工程とを具備することを特徴とする回路装置の製造方法。 - 前記接続部は、前記導電膜を部分的に除去して前記絶縁層を露出させ、露出した前記絶縁層を除去することにより貫通孔を形成し、前記貫通孔にメッキ膜を形成することにより形成されることを特徴とする請求項2記載の回路装置の製造方法。
- 前記メッキ膜は、無電解メッキ処理により前記貫通孔の側壁にメッキ膜を形成した後に、電解メッキ処理を行い、新たなメッキ膜を前記貫通孔に形成することにより形成されることを特徴とする請求項3記載の回路装置の製造方法。
- 前記メッキ膜は、前記導電膜を電極として用いた電解メッキ処理を行うことにより、前記貫通孔の周辺部に位置する前記導電膜から前記貫通孔の内側に形成されることを特徴とする請求項3記載の回路装置の製造方法。
- 前記導電膜から成るひさしを前記貫通孔の周辺部に形成し、
前記ひさしから前記貫通孔の内側に向けてメッキ膜を形成することを特徴とする請求項5記載の回路装置の製造方法。 - 前記絶縁層にはフィラーが混入されていることを特徴とする請求項2記載の回路装置の製造方法。
- 前記支持基板と前記第1の配線層とは接着剤で貼着されており、前記接着剤を溶融することにより前記第1の配線層、前記絶縁層および前記封止樹脂の裏面は前記支持基板から分離されることを特徴とする請求項1または請求項2記載の回路装置の製造方法。
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JP2004222115A JP4596846B2 (ja) | 2004-07-29 | 2004-07-29 | 回路装置の製造方法 |
TW094113626A TWI267115B (en) | 2004-07-29 | 2005-04-28 | Method for making a circuit device |
US11/179,431 US7163841B2 (en) | 2004-07-29 | 2005-07-11 | Method of manufacturing circuit device |
CNB2005100836419A CN100444342C (zh) | 2004-07-29 | 2005-07-13 | 电路装置的制造方法 |
KR1020050066260A KR100728855B1 (ko) | 2004-07-29 | 2005-07-21 | 회로 장치의 제조 방법 |
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- 2005-07-11 US US11/179,431 patent/US7163841B2/en not_active Expired - Fee Related
- 2005-07-13 CN CNB2005100836419A patent/CN100444342C/zh not_active Expired - Fee Related
- 2005-07-21 KR KR1020050066260A patent/KR100728855B1/ko not_active IP Right Cessation
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JP2008060372A (ja) * | 2006-08-31 | 2008-03-13 | Sanyo Electric Co Ltd | 回路装置およびその製造方法、配線基板およびその製造方法 |
JP2011096599A (ja) * | 2009-11-02 | 2011-05-12 | Sumitomo Electric Ind Ltd | シールドフラットケーブルおよびその製造方法 |
JP2015119073A (ja) * | 2013-12-19 | 2015-06-25 | 日本シイエムケイ株式会社 | 多層プリント配線板および、その製造方法 |
Also Published As
Publication number | Publication date |
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TWI267115B (en) | 2006-11-21 |
TW200605160A (en) | 2006-02-01 |
JP4596846B2 (ja) | 2010-12-15 |
CN1728353A (zh) | 2006-02-01 |
US7163841B2 (en) | 2007-01-16 |
KR20060046532A (ko) | 2006-05-17 |
CN100444342C (zh) | 2008-12-17 |
KR100728855B1 (ko) | 2007-06-15 |
US20060024862A1 (en) | 2006-02-02 |
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